WO2015101147A1 - Multi-mode multi-frequency power amplifier - Google Patents

Multi-mode multi-frequency power amplifier Download PDF

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Publication number
WO2015101147A1
WO2015101147A1 PCT/CN2014/093426 CN2014093426W WO2015101147A1 WO 2015101147 A1 WO2015101147 A1 WO 2015101147A1 CN 2014093426 W CN2014093426 W CN 2014093426W WO 2015101147 A1 WO2015101147 A1 WO 2015101147A1
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WO
WIPO (PCT)
Prior art keywords
output
impedance
frequency
controller
segment
Prior art date
Application number
PCT/CN2014/093426
Other languages
French (fr)
Chinese (zh)
Inventor
张黎阳
龙华
赵骞
唐东杰
程珍娟
Original Assignee
国民技术股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 国民技术股份有限公司 filed Critical 国民技术股份有限公司
Publication of WO2015101147A1 publication Critical patent/WO2015101147A1/en
Priority to US15/139,087 priority Critical patent/US9595933B2/en
Priority to US15/418,748 priority patent/US9887679B2/en
Priority to US15/853,835 priority patent/US10044334B2/en
Priority to US15/853,950 priority patent/US9973164B1/en
Priority to US15/854,738 priority patent/US10044335B2/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/39—Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/414—A switch being coupled in the output circuit of an amplifier to switch the output on/off

Definitions

  • the invention belongs to the field of communication, and particularly relates to a multi-mode multi-band (MMMB). Power Amplifier (PA).
  • MMMB multi-mode multi-band
  • PA Power Amplifier
  • Step into 3G/4G After the era, with the increasing number of mobile communication systems, the enhancement of user requirements for terminal equipment roaming and data, and the requirements of the market for backward compatibility of terminal equipment, intelligent, multi-mode multi-frequency, dual-card dual standby, The dual-card dual-pass mobile terminal device has become a product trend, and the multi-mode multi-frequency function of the terminal device has been extremely important.
  • the RF front-end products in the mobile terminal devices are as efficient as possible within the allowable linearity of the system requirements. , that is, the efficiency of the work.
  • GaAs HBT GaAs Heterojunction Bipolar Transistor, GaAs Heterojunction Bipolar Transistor
  • SiGe HBT SiGe Heterojunction Bipolar Transistor, silicon germanium heterojunction bipolar transistor
  • the correct fundamental impedance converter structure must be used to 50 ⁇
  • the standard fundamental impedance is converted to the optimum output fundamental impedance that balances linearity and power efficiency, which optimizes the fundamental impedance of the output load of the active device.
  • the left and right mobile communication terminal devices make the optimum output fundamental impedance in the maximum output power mode generally around 2.5 ⁇ to 5 ⁇ .
  • it is suitable for RF front-end products to achieve 50 ⁇ to 2.5 ⁇ 5 ⁇
  • Conventional fundamental impedance transformer structures for fundamental impedance conversion typically have narrowband characteristics. Therefore, practical products must be optimized for each frequency band or a similar frequency band, that is, each frequency band has a dedicated output load fundamental impedance converter.
  • the power amplifiers for mobile communication terminal equipment are mostly a combination of an amplifier channel for a single or similar frequency band and an output fundamental impedance converter for a single or similar frequency band, such as a single Channel single or dual frequency UMTS (Universal Mobile Telecommunications System , Universal Mobile Telecommunications System) Power Amplifier Covers Two Adjacent Bands in a Single Combination, Dual Quad-Band (Multi-Frequency) GSM/GPRS/EDGE FEM (Front End Module, front-end module) covers two pairs of adjacent bands in two combinations.
  • UMTS Universal Mobile Telecommunications System
  • UMTS Universal Mobile Telecommunications System
  • UMTS Universal Mobile Telecommunications System
  • Power Amplifier Covers Two Adjacent Bands in a Single Combination
  • Dual Quad-Band (Multi-Frequency) GSM/GPRS/EDGE FEM (Front End Module, front-end module) covers two pairs of adjacent bands in two combinations.
  • Multi-mode multi-frequency power amplifier realizes the extension of the above method, that is, according to the instantaneous bandwidth capability of the output fundamental impedance converter, the frequency band of interest is segmentally covered, and an amplifier channel is configured for each output fundamental impedance converter.
  • mobile communication terminal equipment has strong competition in the RF front-end industry. It is a long-term goal to achieve low-cost and even low-cost products while maintaining the performance of RF front-end products, and for each output fundamental impedance transformation.
  • the configuration of an amplifier channel has the problem of high cost and large module area.
  • a multimode multi-frequency power amplifier comprising:
  • a controller that receives and outputs a control signal according to an external signal
  • the broadband amplifier channel is controlled by the controller, and the input end receives the single-frequency or multi-frequency RF signal, and the RF signal is amplified by the power and output through the output end;
  • Fundamental impedance converter a first segment shared by radio frequency signals of each frequency band, a second segment dedicated to each frequency band of each frequency band signal, and a switch circuit, the switch circuit being coupled between the first segment and the second segment
  • the first segment is coupled to an output of the wideband amplifier channel, and an output of the second segment forms an optimal output fundamental impedance of a respective frequency band, the switch circuit being controlled by the controller
  • the power amplified digital RF signal is switched to the second segment to be multiplexed, wherein each output corresponds to one frequency band.
  • the first segment is a shared matching circuit.
  • the input end of the common matching circuit is connected to the output end of the wideband amplifier channel, and the primary output impedance impedance matching is performed on the power amplified digital signal;
  • the second segment is a plurality of dedicated matching circuits.
  • the plurality of dedicated matching circuits output the RF signal matched by the primary output fundamental impedance of the corresponding frequency band to the optimal output fundamental impedance and output;
  • the switch circuit is a first switch array,
  • the first switch array includes a plurality of first switching devices, the plurality of first switching devices being controlled by the controller to couple a radio frequency signal of a corresponding frequency band via a primary output fundamental impedance matching to the corresponding dedicated Matching circuit.
  • the common matching circuit is a low fundamental impedance circuit
  • the dedicated matching circuit is a high fundamental impedance circuit
  • the common matching circuit includes a first inductor and a first capacitor, one end of the first inductor receives a power amplified RF signal, and the other end is coupled to the input ends of the plurality of first switching devices Connected and grounded through the first capacitor.
  • the fundamental impedance transformer further includes a harmonic impedance tuner controlled by the controller to form an optimum output harmonic impedance of the respective frequency band at an output of the wideband amplifier channel.
  • the fundamental impedance transformer further includes the plurality of cascadable directional couplers coupled to the outputs of the plurality of dedicated matching circuits, respectively.
  • Each of the dedicated matching circuits includes a second inductor and a second capacitor, and one end of the second inductor is connected to the corresponding first switching device, and receives a primary output fundamental impedance matching radio frequency signal, the second The other end of the inductor is grounded through the second capacitor and outputs a radio frequency signal that has been matched to the optimum output fundamental impedance.
  • each of the harmonic impedance tuners comprises a second switch array and one or more LC a resonator, the second switch array comprising one or more second switching devices controlled by the controller;
  • One end of the LC resonator is coupled to an output of the wideband amplifier channel, and the other end is grounded through the second switching device.
  • the multimode multi-frequency power amplifier A third switch array is further included, the third switch array includes a plurality of third switching devices controlled by the controller, one end of the plurality of third switching devices being coupled to an input end of the wideband amplifier channel, and One end receives the radio frequency signals of single or multiple frequencies from different external ports, respectively.
  • the controller includes a voltage regulator and a decoder
  • the controller outputs a control signal including an analog domain and/or a digital domain with reference to an output voltage of the voltage regulator, and the decoder is configured to decode an external command.
  • the controller further includes a register for storing the external instruction.
  • the above-mentioned multi-mode multi-frequency power amplifier maximizes the cost of sharing the first section of the low-frequency impedance of the broadband amplifier channel and the fundamental impedance converter, and will fully utilize the low-cost switching circuit design in the multi-segment fundamental impedance conversion circuit.
  • the combination of the first segment and the second segment can be extremely conveniently implemented to select, adjust, combine, and combine to form a complete output load fundamental impedance conversion circuit for each frequency band.
  • a wideband amplifier channel is used to cover multiple frequency bands while maintaining the efficiency of the original single channel covering the single frequency band.
  • the wideband amplifier channel and the first segment of the fundamental impedance converter are fully shared. Extremely beneficial MMMB PA Miniaturization and cost reduction.
  • the selection, adjustment, combination and combination of the broadband amplifier channel and the corresponding channel of the fundamental impedance converter are performed, thereby forming an amplification link for each specific frequency band specific mode, thereby realizing The frequency band is preferred for linear output power and power efficiency Optimal output load fundamental impedance. Maintain MMMB PA including gain, efficiency, linearity, spurs, stability margin, tolerance, etc. At the same time of various performance indicators, the cost of RF front-end products for mobile communication terminal equipment, especially MMMB PA products, is reduced.
  • FIG. 1 is a schematic diagram of a multimode multi-frequency power amplifier in the first embodiment
  • FIG. 2 is a schematic diagram of a multimode multi-frequency power amplifier in the second embodiment
  • FIG. 3 is a schematic diagram of a multimode multi-frequency power amplifier in a third embodiment
  • FIG. 4 is a schematic diagram of a controller of a multimode multi-frequency power amplifier in one embodiment
  • Figure 5 is a schematic diagram of a controller of a multimode multi-frequency power amplifier in another embodiment.
  • the invention aims to solve the radio frequency front end products for mobile communication terminal equipment, especially the broadband amplifier channel in the MMMB PA product and the MMMB
  • the technical problem of multi-mode multi-frequency multiplexing of PA output fundamental impedance converter is to reduce the RF front-end products for mobile communication terminal equipment, especially MMMB PA while maintaining various performance indicators. Production cost of the product.
  • a multimode multi-frequency power amplifier (MMMB PA) 100 includes a wideband amplifier channel 110, a controller 120, and a fundamental impedance converter 170.
  • the power interface Vcc of the wideband amplifier channel 110 is compatible with APT (Average Power Tracking), EPT (Envelope Power Tracking), ET (Envelope Tracking), and the controller 120 receives an external signal.
  • Interface not shown
  • GPIO General Purpose Input Output
  • SPI Serial Peripheral Interface
  • I 2 C Inter- Integrated Circuit
  • MIPI MIPI Alliance, company name
  • RFFE Radio Frequency Front End, RF Front End - Protocol
  • other control interface standards are compatible.
  • the wideband amplifier channel 110 is controlled by the controller 120 and the input of the wideband amplifier channel 110 Ain receives a single frequency or multi-frequency radio frequency (RF) signal RFin, and power-amplifies the RF signal RFin through the output terminal Aout Output.
  • RF radio frequency
  • the wideband amplifier channel 110 consists of one or more amplification stages with an input Ain and an output Aout. Wideband amplifier channel Each of the amplification stages 111 of 110 is received from the controller 120 via its own control interface. Control of the control signal, implementation of operating mode conversion including parameters such as gain, linearity, efficiency; on the other hand through the power interface Vcc Power is supplied to obtain the DC power required to amplify the RF signal.
  • the power source may be a battery pack from a mobile communication terminal device system or an output from a power management circuit of the mobile communication terminal device. More typically, it can be from 2G/3G/4G wireless communication system APT, EPT, ET standard DC-DC converter.
  • the wideband amplifier channel 110 has an input port Ain and an output port Aout that amplifies the input port Ain
  • the RF signals in each frequency band are transmitted to the fundamental impedance transformer 170 through the output terminal Aout.
  • the wideband amplifier channel 110 in the MMMB PA 100 can be made of GaAs HBT, SiGe HBT, GaAs BiFET (Bipolar & Field Effect transistor, process for integrating triode and field effect transistor), GaAs BiHEMT (Bipolar & High Electron Mobility Transistor, process for integrating triodes and high electron mobility transistors), SOI CMOS (Silicon On Insulator Complementary Metal Oxide Semiconductor , Insulating Substrate Silicon Complementary Metal Oxide Semiconductor), LDMOS (Laternally Diffused Metal Oxide Semiconductor) , lateral diffusion metal oxide semiconductor) and other devices or processes with MMIC ( Monolithic Microwave Integrated Circuit , monolithic microwave integrated circuit) implementation.
  • GaAs HBT GaAs BiFET
  • GaAs BiHEMT Bipolar & High Electron Mobility Transistor, process for integrating triodes and high electron mobility transistors
  • SOI CMOS Silicon On Insulator Complementary Metal Oxide Semiconductor
  • Multi-MMMB PA 100 in the form of Chip Model, MCM) or front-end module including MMMB PA 100.
  • the controller 120 receives and outputs a control signal based on an external signal from the platform.
  • Controller 120 The control interface with an external platform (such as the operating platform of a mobile terminal) is compatible with interface standards such as GPIO, SPI, I2C or MIPI RFFE, and is typically SOI CMOS Devices or processes such as Bulk Si CMOS (Bulk Silicon Complementary Metal Oxide Semiconductor) with RFIC (Qadio Frequency Integrated Chip) , RF chip) /Analog IC (analog chip) implementation, and with SiP, flip-chip, LGA, QFN MMMB PA 100 in the form of multi-chip modules and other MMMB PAs, and other semiconductor chips, surface mount devices, substrates and / or lead frames 100 front-end module.
  • CMOS Bok Silicon Complementary Metal Oxide Semiconductor
  • RFIC Qadio Frequency Integrated Chip
  • RF chip /Analog IC (analog chip
  • a fundamental impedance transformer 170 includes a first segment 130 shared by radio frequency signals of respective frequency bands. a second segment 150 dedicated to each of the frequency band RF signals and a switch circuit 140 coupled between the first segment 130 and the second segment 150, the switch circuit 140 Controlled by controller 120, first segment 130 is coupled to output Aout of wideband amplifier channel 110, and second segment 150
  • the output terminal forms an optimum output fundamental impedance of the corresponding frequency band, and the switch circuit 140 switchesably separates the power amplified RF signal to the second segment under the control of the controller 120. Multiple outputs, each of which corresponds to a frequency band.
  • first segment 130 is a common matching circuit (labeled as the first segment, 130), and the switch circuit 140
  • the first switch array (labeled as the switch circuit, 140), the second segment 150 is a plurality of dedicated matching circuits, including a plurality of dedicated matching circuits 150a ⁇ d. Maximize sharing of wideband amplifier channels 110 and a first segment 130 of low fundamental impedance of the fundamental impedance transformer 170, the first switch array 140 is designed in the first segment 130 and the second segment 150 The combination is extremely convenient to implement selection, adjustment, combination, and combination to form a complete fundamental impedance conversion circuit for each frequency band.
  • the input of the common matching circuit 130 and the output of the wideband amplifier channel 110 Aout Connecting, performing primary output fundamental impedance matching on the power amplified RF signal; and outputting multiple dedicated matching circuits 150a ⁇ d And outputting the RF signal matched by the primary output fundamental impedance matching of the corresponding frequency band to the optimal output fundamental impedance;
  • the first switch array 140 includes a plurality of first switching devices 141 144 144, the plurality of first switching devices 141 ⁇ 144 are controlled by the controller 120 to couple the RF signals matched by the primary output fundamental impedance of the corresponding frequency band to the corresponding dedicated matching circuits 150a ⁇ d.
  • the common matching circuit 130 includes a first inductor 131 and a first capacitor 132, and the first inductor 131 One end receives the power amplified RF signal, and the other end is connected to the input terminals of the plurality of first switching devices 141-144 and grounded through the first capacitor 132.
  • the common matching circuit 130 is combined with the LC of the series first inductor 131 and the parallel first capacitor 132.
  • the LC combination converts the low fundamental impedance of 2 ⁇ 5 ⁇ required by wideband amplifier channel 110 to a high fundamental impedance close to 50 ⁇ .
  • Shared matching circuit (first segment) 130 in fundamental impedance converter In the low-resistance section of 170, the selected circuit topology and the self-loss of the matching components have a large influence on the performance of the MMMB PA, such as the efficiency of the MMMB PA, and the linearity. Therefore, the common first segment 130 uses high Q ( A Quality value device that includes a high Q value of the first inductor 131 and a high Q value of the first capacitor 132.
  • first inductance 131 Possible implementations include one or a set of bonding wires, substrate integrated inductors, off-chip SMT One or more combinations of inductors.
  • the possible changes include at least the position, connection, number, etc. of the components in the sense of the topology; the first capacitance of the high Q value, which may be equivalent, but not limited to, the topology and manner in the embodiments of the present invention.
  • Possible implementations of 132 include one or more combinations of chip capacitors, SMT capacitors, and substrate integrated capacitors.
  • the common common matching circuit 130 can be SiP, flip-chip, LGA, QFN MMMB PA 100 in MCM form or include MMMB PA in a variety of package formats and with other semiconductor chips, SMT devices, substrates and / or lead frames 100 front-end module.
  • the fundamental impedance transformer 170 includes only one common common matching circuit 130, which is suitable for relatively small band spacing.
  • MMMB PA such as: 700MHz ⁇ 915MHz (Bands 5, 8, 12, 17 ⁇ 20, etc.) or 1.7 ⁇ 2.7GHz (Bands MMMB PA 100 of 1 ⁇ 4, 7, 33 ⁇ 41, etc., to achieve MMMB PA 100 covering multiple octaves from 700MHz to 2.7GHz Expansion of the invention may be considered, such as adjusting the common common matching circuit 130 with additional switching devices and/or employing two or more wideband amplifier channels 110.
  • two or more common common matching circuits 130 are used in the fundamental impedance transformer 170.
  • the dedicated matching circuit 150a is illustrated as an example, and the dedicated matching circuit 150a includes the second inductance 151. And a second capacitor 155, one end of the second inductor 151 is connected to the corresponding first switch 141, receives the RF signal of the primary output fundamental impedance matching, and the other end of the second inductor 151 passes the second capacitor 155 Ground and output a RF signal that has been matched to the optimum output fundamental impedance.
  • the specific structure of the dedicated matching circuit c ⁇ d is the same as that of the dedicated matching circuit 150a, and will not be described here.
  • the fundamental impedance transformer 170 further includes a plurality of cascadable directional couplers 160. And respectively coupled to the output ends of the plurality of dedicated matching circuits 150a ⁇ d, the directional coupler 160 accurately indicates the magnitude of each output power, and the EM of the EDA tool is preferably used in the actual design.
  • the simulator counts the effects of cascadable directional couplers 161 ⁇ 164.
  • the fundamental impedance converter 170 includes a plurality of dedicated matching circuits 150a ⁇ d, and these dedicated matching circuits 150a ⁇ d is one-to-one correspondence with the output bands of the MMMB PA 100, and is dedicated to each frequency band.
  • the purpose of the plurality of dedicated matching circuits 150a ⁇ d is to share the first segment After 130, the fundamental impedance relative to 50 ⁇ is accurately converted to 50 ⁇ . That is, the common first segment 130 passes through the switch array 140 and the dedicated second segment 150
  • the cascading is generally the wideband amplifier channel 110 providing the best output fundamental impedance required to achieve MMMB PA 100 performance in each band of Band_a ⁇ d.
  • the plurality of dedicated matching circuits 150a ⁇ d are composed of the second inductors 151, 152, 153, 154 and the second capacitor Multiple LC combinations of 155, 156, 157, 158, these LC combinations are precisely designed so that they share the first segment 130, the first switch array 140 And the phasing coupler 160 work together to accurately convert the 50 ⁇ standard fundamental impedance at the band_a ⁇ d of the MMMB PA 100 output band into a wideband amplifier channel.
  • the optimum output fundamental impedance is required to enable the MMMB PA 100 to achieve performance metrics including gain, efficiency, linearity, spurs, stability margin, and tolerance in each mode.
  • the implementation of the LC combination implementing multiple dedicated matching circuits 150a ⁇ d typically includes single or multiple bonding lines, SMT Inductor, one or more combinations of on-chip inductors, substrate integrated inductors, on-chip capacitors, SMT capacitors, and substrate integrated capacitors.
  • the dedicated second segment 150 can be in SiP, Flip-chip, LGA, QFN and other package forms, and form MCM with other semiconductor chips, SMT devices, substrates and / or lead frames MMMB PA 100 or front-end module including MMMB PA 100.
  • cascadable directional couplers 160 required for transmit power monitoring is the same as the number of dedicated matching circuits 150a ⁇ d, Figure 1
  • the directional coupler 160 shown to 3 includes four, which are 161, 162, 163, and 164, respectively.
  • the implementation of the set of cascadable directional couplers 160 includes the use of SiP
  • the substrate in the structure is integrated with microstrip lines, bonding lines or SMT.
  • cascadable directional couplers 160 of frequency bands The form of connection between them is not limited to the series connection in the embodiment, and parallel or series-parallel connection may also be employed.
  • the first switch array 140 is designed to be located at the junction of the common first segment 130 and the dedicated second segment 150. Broadband amplification channel 110 The required 2 ⁇ 5 ⁇ low fundamental impedance has been converted to a high fundamental impedance close to 50 ⁇ via the common first segment 130, where the switch array 140 is inserted. The insertion loss caused by the first switching devices 141 to 144 is extremely effectively reduced.
  • the first switch array 140 selects, adjusts, combines, and combines the fundamental impedance transformers 170 in response to control signals from the controller 120.
  • the common first segment 130 and the dedicated second segment 150 provide the optimum output fundamental impedance required for the corresponding frequency band at the output Aout of the wideband amplification channel 110.
  • the first switch array 140 can be implemented by SOI CMOS, GaAs pHEMT (Pseudomorphic Devices such as HEMTs, high electron mobility transistors), or in the form of process MMICs, like but not limited to Figures 1 to 3 In the embodiment, the possible variations are at least the difference in the number of switching devices and the like. Also, the first switch array 140 in the fundamental impedance converter 170 can be SiP, flip-chip, wire Bond (bond), LGA, QFN and other package forms, and form MCM with other semiconductor chips, SMT devices, substrates, substrate integrated components and / or lead frame The MMMB PA 100 or front-end module including the MMMB PA 100.
  • the MMMB PA 100 further includes a third switch array 105.
  • the third switch array 105 includes a plurality of third switching devices 101-103 controlled by the controller 120, one end of the plurality of third switching devices 101-103 and the wideband amplifier channel 110.
  • the input terminal Ain is coupled to provide the RF signal RFin to the broadband amplifier channel 110, and the other end (RF input ports Band_a, Band_bc, Band_d) ) Receive single or multiple frequency RF signals RFin from different external ports.
  • Figure 2 depicts an embodiment of a MMMB PA 100 with multiple input ports. Multiple frequency signals for the transceiver with the platform chipset RFin The output port is docked.
  • the third switch array 105 is added to the MMMB PA 100. It selects the RF input ports of the MMMB PA 100, Band_a, Band_bc. (Multi-frequency can be connected), Band_d and then connected to the input port Ain of the wideband amplifier channel 110.
  • the third switch array 205 can be an SPnT structure, which can be SOI CMOS, GaAs pHEMT
  • the device or process is implemented in the form of an MMIC, and is not limited to the mode in the embodiment, and may vary at least the position, number, connection, and the like of the third switching device 101-103.
  • the third switch array 105 can be used in various packages such as SiP, flip-chip, wire bond, LGA, QFN, and other semiconductor chips, SMT
  • the device, substrate, substrate integrated components, and/or lead frame form the MCM-style MMMB PA 100 or front-end module including the MMMB PA 100.
  • the third switch array 205 Usually only low power signals need to be switched, and their performance requirements in terms of insertion loss, linearity, etc. are low, and the same or compatible semiconductor process as the wideband amplifier channel 110 can be used, and the wideband amplifier channel 110 Integrated with the same chip.
  • MMMB PA 100 RF input ports Band_a, Band_bc, Band_d
  • the settings generally follow the platform chipset transceiver.
  • the RF input ports Band_a, Band_bc, and Band_d are interchangeable.
  • the MMMB of this embodiment In the PA 100 architecture, the input ports connected to the input Ain of the same broadband amplifier channel 100 via STnP (Server Network Time Protocol) are interchangeable.
  • STnP Server Network Time Protocol
  • the fundamental impedance transformer 170 further includes a harmonic impedance tuner 370, a harmonic impedance tuner.
  • the 370 is controlled by the controller 120 to form an optimum output harmonic impedance of the corresponding frequency band at the output Aout of the wideband amplifier channel 110.
  • each harmonic impedance tuner 370 includes one or more LCs
  • the resonator and the second switch array, the second switch array includes one or more second switching devices controlled by the controller; one end of the LC resonator is coupled to the output of the wideband amplifier channel, and the other end is grounded through the second switching device.
  • the LC resonator includes a third inductor 372, 373 and a third capacitor 371, and the second switch array includes second switching devices 374, 375.
  • a harmonic impedance tuner to the output of the wideband amplifier channel 110, Aout 370 .
  • Fixed harmonic regulators which usually do not have switching devices, can only function in a narrower frequency band.
  • the second switching device 374, 375 is introduced in the harmonic impedance tuner 370 to provide wideband regulation, making MMMB
  • the PA 100 achieves improved linearity and power efficiency over a wider band of Band_a ⁇ d.
  • LC The resonator typically has a capacitive characteristic at the fundamental frequency, and the capacitive reactance is relatively high, so the loss of the second switching device 374, 375 under proper design is typically negligible.
  • the third capacitor 371 is a high Q capacitor
  • the third inductor 372 and 373 are high Q inductors
  • the high Q Value third inductors 372, 373 Possible implementations include one or a set of bonding wires, substrate integrated inductors, off-chip SMT One or more combinations of inductors. It is not limited to the topology and mode in the embodiment, and the possible changes include at least the component position, connection, number, etc. in the sense of topology; the third capacitance of the high Q value 371 Possible implementations include chip capacitors, SMT One or more combinations of capacitors or substrate integrated capacitors. It is not limited to the combination of the topology and the mode in the embodiment of the present invention, and the possible changes include at least the position, connection, number, and the like of the components in the sense of the topology.
  • the second switching device 374, 375 in the harmonic tuning circuit 370 accepts from the MMMB PA controller 110 a set of control signals that select, adjust, combine, and combine the LC in the harmonic tuning circuit 370 The resonator, thus forming the optimum output harmonic impedance required for the modes of the frequency bands at the wideband power amplifier channel output port.
  • MMMB PA 100 The sensitivity of the performance to the optimum harmonic output impedance is much greater than the sensitivity of the optimal fundamental wave output impedance, which makes it unnecessary for the harmonic output impedance tuner to have a one-to-one correspondence with the output band.
  • the LC resonator can provide at least 3 A useful harmonic adjustment state for MMMB PA 100 with relatively small band spacing, such as typical 700MHz ⁇ 915MHz (Bands 5, 8, 12, MMMB PA of 17 ⁇ 20, etc. or 1.7 ⁇ 2.7GHz (Bands 1 ⁇ 4, 7, 33 ⁇ 41, etc.) .
  • band spacing such as typical 700MHz ⁇ 915MHz (Bands 5, 8, 12, MMMB PA of 17 ⁇ 20, etc. or 1.7 ⁇ 2.7GHz (Bands 1 ⁇ 4, 7, 33 ⁇ 41, etc.) .
  • the second switching device 374, 375 in the adjustable wideband harmonic tuning circuit 370 can be coupled to the first switch array 140 The whole is designed in the same process.
  • controller 110 includes a voltage regulator, controller 110 A control signal containing an analog domain and/or a digital domain is output with reference to the output voltage of the voltage regulator.
  • a controller 400 that is compatible with the GPIO control interface standard, the controller 400 It is usually powered by the terminal power supply Vbatt and accepts a set of digital control signals Vm1 ⁇ i and Vb1 ⁇ j from the platform.
  • the group of signals contains MMMB PA The frequency band of 100, the mode selects the external command in parallel mode.
  • decoder 431 decoded by decoder 431 to produce a set of control voltages Vctr1 ⁇ k for the wideband amplifier channel 110 and the first switch array. 140, second switch array 105, and third switch array (as shown in Figure 3, including 374, 375).
  • Controller 400 also includes one or more voltage regulators 421
  • the voltage regulator 421 is used to generate one or a set of reference voltages, and the control voltages Vctr1 ⁇ k are referenced to the (group) reference voltages (several of them).
  • the reference voltage (several) is also based on a set of digital control signals Vm1 ⁇ i from the platform.
  • Vb1 ⁇ j is assigned to a set of analog control signals Vreg1 ⁇ l of controller 400.
  • the set of analog control signals Vreg1 ⁇ l output port and MMMB PA 100 The analog control output port is connected to the analog controlled port of the wide amplifier amplifier channel 110 formed by processes such as GaAs HBT, SiGe HBT, etc., such as the base bias circuit port, and thus, the control voltage Vctrl1 ⁇ k together complete control of the wideband amplifier channel 110.
  • the output voltage of the control voltage Vctrl1 ⁇ k is used.
  • the bandgap (bandgap reference circuit) is designed to have the optimum temperature coefficient required by the wideband amplifier channel 110.
  • the MIPI RF front end (Front-end ) Control interface standard compatible controller 500 for the MIPI RF front end (Front-end ) Control interface standard compatible controller 500.
  • the controller 500 is typically powered by the terminal device power supply Vbatt, at clock SCLK and reference voltage VIO With the participation of a set of serial digital control signals SDATA from the platform.
  • the serial digital control signal SDATA contains MMMB PA 100
  • the frequency band and mode select an external command in parallel mode.
  • the instruction is written to a set of registers 502 for temporary storage with the participation of the clock SCLK and the reference voltage VIO, and the external command is decoded by the decoder 503.
  • a set of control voltages Vctr1 ⁇ k is generated for the wideband amplifier channel 110 and the first switch array 140, the second switch array 105, and the third switch array (as shown in FIG. 3, 374, 375) control.
  • the controller 500 also includes one or more voltage regulators 501 for generating one or a set of reference voltages, the control voltage Vctr1 ⁇ k Typically referenced to this (set) reference voltage (several of these).
  • the (group) reference voltage (several) is also assigned to the MMMB PA 100 controller based on a set of digital control signals Vm1 ⁇ i and Vb1 ⁇ j from the platform.
  • the analog controlled port of the wide-to-amplifier channel 110 formed by a process such as SiGe HBT is connected, such as a base bias circuit port, thereby completing the wideband amplifier channel together with the control voltage Vctrl1 ⁇ k 110 control.
  • the output port of the control voltage Vctrl1 ⁇ k is designed to have a wideband amplifier channel using bandgap or the like. 110 The optimal temperature coefficient required.
  • the switch array (the first switch array 140 and the second switch array 105) in the MMMB PA 100 disclosed in the above embodiment
  • the third switch array (Fig. 3, including 374, 375)) can usually be independently controlled by the control voltages Vtr1 ⁇ k
  • the control of the wideband amplifier channel 110 can usually be controlled by analog signals.
  • Vreg1 ⁇ l independently completes the control, but essentially covers a set of analog domains and/or digital domain signals generated by controller 110 (400, 500) to jointly control the wideband amplifier channel. And the way the switch arrays.
  • the controller 110 compatible with the SPI and I 2 C control interface standards is similar to the MIPI RF front-end control interface and the GPIO control interface standard compatible controller 110, and will not be described here.
  • a communication terminal including the above-described multimode multi-frequency power amplifier (MMMB PA) 100 is also provided .
  • the communication terminal can be a mobile phone, a PAD, a walkie-talkie, or the like.

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Abstract

Provided is a multi-mode multi-frequency power amplifier (100), comprising: a controller (120) for receiving and outputting control signals based on external signals; a broadband amplifier channel (110) for receiving single-frequency or multi-frequency radio-frequency (RF) signals via an input end, conducting power amplification on the RF signals, and outputting the signals via an output end; a fundamental wave impedance convertor (170) comprising a first segment (130) shared by RF signals in respective frequency bands, a second segment (150) dedicated for RF signals in each frequency band, and a switch circuit (140), the switch circuit (140) being controlled by the controller (120) to switchably separate the RF signals with amplified power to the second segment (150) for multiple outputs.

Description

多模多频功率放大器 Multimode multi-frequency power amplifier 技术领域 Technical field
本发明属于通讯领域，尤其涉及一种多模多频 (Multi-Mode Multi-Band ， MMMB) 功率放大器 (Power Amplifier ， PA) 。  The invention belongs to the field of communication, and particularly relates to a multi-mode multi-band (MMMB). Power Amplifier (PA).
背景技术 Background technique
步入 3G/4G 时代之后，随着移动通信制式的不断增多、用户对终端设备漫游及数据等功能要求的增强、以加之市场对终端设备向后兼容的要求，智能型、多模多频、双卡双待、双卡双通移动终端设备成为产品趋势，其中终端设备的多模多频功能已极为重要。 Step into 3G/4G After the era, with the increasing number of mobile communication systems, the enhancement of user requirements for terminal equipment roaming and data, and the requirements of the market for backward compatibility of terminal equipment, intelligent, multi-mode multi-frequency, dual-card dual standby, The dual-card dual-pass mobile terminal device has become a product trend, and the multi-mode multi-frequency function of the terminal device has been extremely important.
由于大多数移动终端设备由电池供电，射频终端占据终端耗电的极大部分，因此移动终端设备中的射频前端产品，尤其是功率放大器，均是在***要求线性度许可范围内尽可能提高效率，亦即增功效率。为提高功率放大器的效率，一方面须尽量使用高效率有源器件，如化合物半导体技术和器件，例如： GaAs HBT （ GaAs Heterojunction Bipolar Transistor ，砷化镓异质结双极晶体管）， SiGe HBT （ SiGe Heterojunction Bipolar Transistor ，锗化硅异质结双极晶体管） 等；另一方面须使用正确的基波阻抗变换器结构将 50Ω 标准基波阻抗转化为兼顾线性度和增功效率的最佳输出基波阻抗，即优化有源器件的输出负载基波阻抗。对于电源供电电压通常在 3.7V 左右的移动通信终端设备，使得最大输出功率模式下的最佳输出基波阻抗通常在 2.5Ω~5Ω 附近。然而不巧的是，适合射频前端产品用的能实现 50Ω 至 2.5Ω~5Ω 基波阻抗转换的传统基波阻抗变换器结构通常具有窄带特性。因此，实用产品须针对各个频段或相近频段实施优化，亦即每个频段具有专用的输出负载基波阻抗转换器。 Since most mobile terminal devices are powered by batteries, and the radio frequency terminals occupy a large part of the terminal power consumption, the RF front-end products in the mobile terminal devices, especially the power amplifiers, are as efficient as possible within the allowable linearity of the system requirements. , that is, the efficiency of the work. In order to improve the efficiency of the power amplifier, it is necessary to use high-efficiency active devices such as compound semiconductor technology and devices, for example: GaAs HBT (GaAs Heterojunction Bipolar Transistor, GaAs Heterojunction Bipolar Transistor), SiGe HBT ( SiGe Heterojunction Bipolar Transistor, silicon germanium heterojunction bipolar transistor), etc.; on the other hand, the correct fundamental impedance converter structure must be used to 50Ω The standard fundamental impedance is converted to the optimum output fundamental impedance that balances linearity and power efficiency, which optimizes the fundamental impedance of the output load of the active device. For the power supply voltage is usually at 3.7V The left and right mobile communication terminal devices make the optimum output fundamental impedance in the maximum output power mode generally around 2.5 Ω to 5 Ω. However, unfortunately, it is suitable for RF front-end products to achieve 50Ω to 2.5Ω~5Ω Conventional fundamental impedance transformer structures for fundamental impedance conversion typically have narrowband characteristics. Therefore, practical products must be optimized for each frequency band or a similar frequency band, that is, each frequency band has a dedicated output load fundamental impedance converter.
实施上，在多模多频需求出现之前，移动通信终端设备用功率放大器大多是一个针对单一或相近频段的放大器通道和一个针对单一或相近频段的输出基波阻抗变换器的组合体，如单通道单频或双频 UMTS （ Universal Mobile Telecommunications System ，通用移动通信***）功率放大器以单一组合体覆盖两个相邻频段，双通道 Quad-Band （多频） GSM/GPRS/EDGE FEM （ Front End Module ，前端模块）以两个组合体覆盖两对相邻频段。传统技术 MMMB PA （多模多频功率放大器）实现延用上述方法，即根据输出基波阻抗变换器的瞬时带宽能力，将所感兴趣的频段分段覆盖，为每个输出基波阻抗变换器配置一个放大器通道。而当下，移动通信终端设备用射频前端行业存在强烈竞争，在保持射频前端产品各项性能的前提下实现产品低成本化乃至超低成本化成为长期的目标，而为每个输出基波阻抗变换器配置一个放大器通道存在成本高、模块面积大的问题。 In practice, before the emergence of multi-mode multi-frequency requirements, the power amplifiers for mobile communication terminal equipment are mostly a combination of an amplifier channel for a single or similar frequency band and an output fundamental impedance converter for a single or similar frequency band, such as a single Channel single or dual frequency UMTS (Universal Mobile Telecommunications System , Universal Mobile Telecommunications System) Power Amplifier Covers Two Adjacent Bands in a Single Combination, Dual Quad-Band (Multi-Frequency) GSM/GPRS/EDGE FEM (Front End Module, front-end module) covers two pairs of adjacent bands in two combinations. Traditional Technology MMMB PA (Multi-mode multi-frequency power amplifier) realizes the extension of the above method, that is, according to the instantaneous bandwidth capability of the output fundamental impedance converter, the frequency band of interest is segmentally covered, and an amplifier channel is configured for each output fundamental impedance converter. At present, mobile communication terminal equipment has strong competition in the RF front-end industry. It is a long-term goal to achieve low-cost and even low-cost products while maintaining the performance of RF front-end products, and for each output fundamental impedance transformation. The configuration of an amplifier channel has the problem of high cost and large module area.
发明内容 Summary of the invention
基于此，有必要提供一种 通过放大器通道的复用降低射频前端的成本和模块面积的多模多频功率放大器 。 Based on this, it is necessary to provide a multimode multi-frequency power amplifier that reduces the cost and module area of the RF front end by multiplexing the amplifier channels.
一种多模多频功率放大器，包括： A multimode multi-frequency power amplifier comprising:
控制器，接收并根据外部信号输出控制信号； a controller that receives and outputs a control signal according to an external signal;
宽带放大器通道，受所述控制器控制，输入端接收单频或多频的射频信号，对所述射频信号进行功率放大并通过输出端输出； The broadband amplifier channel is controlled by the controller, and the input end receives the single-frequency or multi-frequency RF signal, and the RF signal is amplified by the power and output through the output end;
基波阻抗变换器， 包括各频带射频信号共用的第一节段、各频带射频信号各自专用的第二节段以及开关电路，所述开关电路耦接于所述第一节段和所述第二节段之间 ，所述第一节段与所述宽带放大器通道的输出端连接，且所述第二节段的输出端形成相应频段的最佳输出基波阻抗，所述开关电路受所述控制器控制可切换地将经功率放大的所述射频信号分离至所述第二节段以多路输出，其中每一路输出对应一个频带。 Fundamental impedance converter, a first segment shared by radio frequency signals of each frequency band, a second segment dedicated to each frequency band of each frequency band signal, and a switch circuit, the switch circuit being coupled between the first segment and the second segment The first segment is coupled to an output of the wideband amplifier channel, and an output of the second segment forms an optimal output fundamental impedance of a respective frequency band, the switch circuit being controlled by the controller The power amplified digital RF signal is switched to the second segment to be multiplexed, wherein each output corresponds to one frequency band.
在其中一个实施例中， 所述第一节段为共用匹配电路， 所述共用匹配电路的输入端与所述宽带放大器通道的输出端连接，对经功率放大的所述射频信号进行初级输出基波阻抗匹配后输出； In one embodiment, the first segment is a shared matching circuit. The input end of the common matching circuit is connected to the output end of the wideband amplifier channel, and the primary output impedance impedance matching is performed on the power amplified digital signal;
所述第二节段为多个专用匹配电路， 所述多个专用匹配电路对相应频带的经初级输出基波阻抗匹配后的射频信号匹配到最佳输出基波阻抗后输出； The second segment is a plurality of dedicated matching circuits. The plurality of dedicated matching circuits output the RF signal matched by the primary output fundamental impedance of the corresponding frequency band to the optimal output fundamental impedance and output;
所述开关电路为第一开关阵列， 所述第一开关阵列包括多个第一开关器件，该多个第一开关器件受所述控制器控制，将相应频带的经初级输出基波阻抗匹配后的射频信号耦合到对应的所述专用匹配电路。 The switch circuit is a first switch array, The first switch array includes a plurality of first switching devices, the plurality of first switching devices being controlled by the controller to couple a radio frequency signal of a corresponding frequency band via a primary output fundamental impedance matching to the corresponding dedicated Matching circuit.
在其中一个实施例中，所述共用匹配电路为低基波阻抗电路，所述专用匹配电路为高基波阻抗电路。 In one of the embodiments, the common matching circuit is a low fundamental impedance circuit, and the dedicated matching circuit is a high fundamental impedance circuit.
在其中一个实施例中，所述共用匹配电路包括第一电感和第一电容，所述第一电感的一端接收经功率放大的射频信号，另一端与多个所述第一开关器件的输入端连接并通过所述第一电容接地。 In one embodiment, the common matching circuit includes a first inductor and a first capacitor, one end of the first inductor receives a power amplified RF signal, and the other end is coupled to the input ends of the plurality of first switching devices Connected and grounded through the first capacitor.
在其中一个实施例中， 所述基波阻抗变换器还包括谐波阻抗调谐器，所述谐波阻抗调谐器受所述控制器控制，在所述宽带放大器通道的输出端形成相应频段的最佳输出谐波阻抗。 In one of the embodiments, The fundamental impedance transformer further includes a harmonic impedance tuner controlled by the controller to form an optimum output harmonic impedance of the respective frequency band at an output of the wideband amplifier channel.
在其中一个实施例中，所述基波阻抗变换器还包括所述多个可级联的定向耦合器，分别耦合到所述多个专用匹配电路的输出端。 In one embodiment, the fundamental impedance transformer further includes the plurality of cascadable directional couplers coupled to the outputs of the plurality of dedicated matching circuits, respectively.
在其中一个实施例中， 每个所述专用匹配电路包括第二电感和第二电容，所述第二电感的一端与对应的所述第一开关器件连接，接收初级输出基波阻抗匹配后的射频信号，所述第二电感的另一端通过所述第二电容接地，并输出已匹配到最佳输出基波阻抗的射频信号。 In one of the embodiments, Each of the dedicated matching circuits includes a second inductor and a second capacitor, and one end of the second inductor is connected to the corresponding first switching device, and receives a primary output fundamental impedance matching radio frequency signal, the second The other end of the inductor is grounded through the second capacitor and outputs a radio frequency signal that has been matched to the optimum output fundamental impedance.
在其中一个实施例中，每个所述谐波阻抗调谐器包括第二开关阵列和一个或多个 LC 谐振器，所述第二开关阵列包括一个或多个受所述控制器控制的第二开关器件； In one of the embodiments, each of the harmonic impedance tuners comprises a second switch array and one or more LC a resonator, the second switch array comprising one or more second switching devices controlled by the controller;
所述 LC 谐振器的一端与所述宽带放大器通道的输出端耦合，另一端通过所述第二开关器件接地。 One end of the LC resonator is coupled to an output of the wideband amplifier channel, and the other end is grounded through the second switching device.
在其中一个实施例中， 所述多模多频功率放大器 还包括第三开关阵列，所述第三开关阵列包括多个受所述控制器控制的第三开关器件，所述多个第三开关器件一端与所述宽带放大器通道的输入端耦接，另一端分别接收来自不同外部端口的单频或多频的所述射频信号。 In one embodiment, the multimode multi-frequency power amplifier A third switch array is further included, the third switch array includes a plurality of third switching devices controlled by the controller, one end of the plurality of third switching devices being coupled to an input end of the wideband amplifier channel, and One end receives the radio frequency signals of single or multiple frequencies from different external ports, respectively.
在其中一个实施例中，所述控制器包括电压调节器 和译码器 ，所述控制器以所述电压调节器的输出电压为参考，输出包含模拟域和 / 或数字域的控制信号， 所述译码器用于对外部指令进行译码 。 In one of the embodiments, the controller includes a voltage regulator and a decoder The controller outputs a control signal including an analog domain and/or a digital domain with reference to an output voltage of the voltage regulator, and the decoder is configured to decode an external command.
在其中一个实施例中， 所述控制器还包括寄存器，所述寄存器用于存储所述外部指令。 In one of the embodiments, the controller further includes a register for storing the external instruction.
上述多模多频功率放大器最大限度共用成本较为昂贵宽带放大器通道和基波阻抗变换器的低基波阻抗第一节段，将充分利用低成本的开关电路设计在多节基波阻抗变换电路的第一节段和第二节段的结合部，可极其方便地实施选择、调节、组合、合并从而形成针对各频段的完整的输出负载基波阻抗变换电路。一方面，使用一个宽带放大器通道覆盖多个频段的同时，保持原有单一通道覆盖单一频段所拥有的增功效率，另一方面宽带放大器通道以及基波阻抗变换器的第一节段被充分共用，极其有利于 MMMB PA 的小型化和低成本化。在控制器控制下，根据来自于平台的外部信号，进行宽带放大器通道及基波阻抗变换器相应通道的选择、调节、组合、合并，进而对每个特定频段特定模式形成放大链路，实现诸频段首选线性输出功率和增功效率所要求的 最佳 输出负载基波阻抗。保持包括增益、效率、线性度、杂散、稳定裕度、耐受性等在内的 MMMB PA 各项性能指标的同时，降低移动通信终端设备用射频前端产品尤其是 MMMB PA 产品的成本。 The above-mentioned multi-mode multi-frequency power amplifier maximizes the cost of sharing the first section of the low-frequency impedance of the broadband amplifier channel and the fundamental impedance converter, and will fully utilize the low-cost switching circuit design in the multi-segment fundamental impedance conversion circuit. The combination of the first segment and the second segment can be extremely conveniently implemented to select, adjust, combine, and combine to form a complete output load fundamental impedance conversion circuit for each frequency band. On the one hand, a wideband amplifier channel is used to cover multiple frequency bands while maintaining the efficiency of the original single channel covering the single frequency band. On the other hand, the wideband amplifier channel and the first segment of the fundamental impedance converter are fully shared. Extremely beneficial MMMB PA Miniaturization and cost reduction. Under the control of the controller, according to the external signal from the platform, the selection, adjustment, combination and combination of the broadband amplifier channel and the corresponding channel of the fundamental impedance converter are performed, thereby forming an amplification link for each specific frequency band specific mode, thereby realizing The frequency band is preferred for linear output power and power efficiency Optimal output load fundamental impedance. Maintain MMMB PA including gain, efficiency, linearity, spurs, stability margin, tolerance, etc. At the same time of various performance indicators, the cost of RF front-end products for mobile communication terminal equipment, especially MMMB PA products, is reduced.
附图说明 DRAWINGS
图 1 是第一个实施例中的多模多频功率放大器的原理图； 1 is a schematic diagram of a multimode multi-frequency power amplifier in the first embodiment;
图 2 是第二个实施例中的多模多频功率放大器的原理图； 2 is a schematic diagram of a multimode multi-frequency power amplifier in the second embodiment;
图 3 是第三个实施例中的多模多频功率放大器的原理图； 3 is a schematic diagram of a multimode multi-frequency power amplifier in a third embodiment;
图 4 是一个实施例中的多模多频功率放大器的控制器的原理图； 4 is a schematic diagram of a controller of a multimode multi-frequency power amplifier in one embodiment;
图 5 是另一个实施例中的多模多频功率放大器的控制器的原理图。 Figure 5 is a schematic diagram of a controller of a multimode multi-frequency power amplifier in another embodiment.
具体实施方式 detailed description
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。 The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
随着新型半导体开关器件和技术，如 SOI 等的成熟，以及 SMT （ Surface Mounted Technology 表面贴装技术） -Free 和 flip-chip （倒装芯片）等封装技术的成熟和低成本化进程，使得传统 MMMB PA 实现成本出现进一步节省的可能性。这一可能性存在于这样一个事实：在常用移动通信频段中放大器通道的带宽特性大幅度优于输出基波阻抗变换器的带宽特性。因此，可以通过 宽带放大器通道 的复用降低移动终端设备中的射频前端产品的成本，所述方法尤其适用于覆盖较大频段间隔的 MMMB PA 。 With the maturity of new semiconductor switching devices and technologies such as SOI, and SMT (Surface Mounted) Technology Surface Mount Technology) - The maturity and low cost of packaging technologies such as Free and flip-chip (flip-chip) make traditional MMMB PA The possibility of further savings in implementation costs. This possibility exists in the fact that the bandwidth characteristics of the amplifier channel in the commonly used mobile communication band are much better than the bandwidth characteristics of the output fundamental impedance converter. Therefore, you can pass The multiplexing of wideband amplifier channels reduces the cost of RF front-end products in mobile terminal equipment, which is especially useful for MMMB PAs that cover larger frequency band spacing.
本发明拟解决移动通信终端设备用射频前端产品尤其是 MMMB PA 产品中 宽带放大器通道 以及 MMMB PA 输出基波阻抗变换器的多模多频复用的技术问题，以期在保持各项性能指标的同时，降低移动通信终端设备用射频前端产品尤其是 MMMB PA 产品的生产成本。 The invention aims to solve the radio frequency front end products for mobile communication terminal equipment, especially the broadband amplifier channel in the MMMB PA product and the MMMB The technical problem of multi-mode multi-frequency multiplexing of PA output fundamental impedance converter is to reduce the RF front-end products for mobile communication terminal equipment, especially MMMB PA while maintaining various performance indicators. Production cost of the product.
结合图 1 至 3 ，多模多频功率放大器（ MMMB PA ） 100 包括：宽带放大器通道 110 、控制器 120 以及基波阻抗变换器 170 。宽带放大器通道 110 的电源接口 Vcc 与 APT （ Average Power Tracking ，平均功率跟踪）、 EPT （ Envelope Power Tracking ，包络功率跟踪）、 ET （ Envelope tracking ，包络跟踪）兼容，控制器 120 接收外部信号的接口（图未示）与 GPIO （ General Purpose Input Output ，通用输入 / 输出协议）、 SPI （ Serial Peripheral Interface ，串行外设接口协议）、 I2C （ Inter － Integrated Circuit ，两线式串行总线协议）、 MIPI （ MIPI Alliance ，公司名称） RFFE （ Radio Frequency Front End ，射频前端--协议）等控制接口标准兼容。In conjunction with FIGS. 1 through 3, a multimode multi-frequency power amplifier (MMMB PA) 100 includes a wideband amplifier channel 110, a controller 120, and a fundamental impedance converter 170. The power interface Vcc of the wideband amplifier channel 110 is compatible with APT (Average Power Tracking), EPT (Envelope Power Tracking), ET (Envelope Tracking), and the controller 120 receives an external signal. Interface (not shown) and GPIO (General Purpose Input Output), SPI (Serial Peripheral Interface), I 2 C (Inter- Integrated Circuit) Protocol), MIPI (MIPI Alliance, company name) RFFE (Radio Frequency Front End, RF Front End - Protocol) and other control interface standards are compatible.
参考图 1 至 3 宽带放大器通道 110 受控制器 120 控制，宽带放大器通道 110 的输入端 Ain 接收单频或多频的射频（ Radio Frequency ， RF ）信号 RFin ，对射频信号 RFin 进行功率放大并通过输出端 Aout 输出。 Referring to Figures 1 through 3, the wideband amplifier channel 110 is controlled by the controller 120 and the input of the wideband amplifier channel 110 Ain receives a single frequency or multi-frequency radio frequency (RF) signal RFin, and power-amplifies the RF signal RFin through the output terminal Aout Output.
宽带放大器通道 110 由一个或多个放大级组成，具有输入端 Ain 和输出端 Aout 。宽带放大器通道 110 的各个放大级 111 ，一方面通过自身的控制接口接受来自控制器 120 的控制信号的控制，实施包括、增益、线性度、效率等参数的工作模式转换；另一方面通过电源接口 Vcc 接受电源供电，以获取放大射频信号所需的直流功率。所述电源可以是来自移动通信终端设备***的电池组，也可以是来自移动通信终端设备的电源管理电路的输出。更典型地，可以是来自 2G/3G/4G 无线通信*** APT 、 EPT 、 ET 标准的 DC-DC 转换器。 The wideband amplifier channel 110 consists of one or more amplification stages with an input Ain and an output Aout. Wideband amplifier channel Each of the amplification stages 111 of 110 is received from the controller 120 via its own control interface. Control of the control signal, implementation of operating mode conversion including parameters such as gain, linearity, efficiency; on the other hand through the power interface Vcc Power is supplied to obtain the DC power required to amplify the RF signal. The power source may be a battery pack from a mobile communication terminal device system or an output from a power management circuit of the mobile communication terminal device. More typically, it can be from 2G/3G/4G wireless communication system APT, EPT, ET standard DC-DC converter.
宽带放大器通道 110 有一个输入端口 Ain 和一个输出端口 Aout ，放大进入输入端口 Ain 的各个频带内的 RF 信号并通过输出端 Aout 将其传送至基波阻抗变换器 170 。 The wideband amplifier channel 110 has an input port Ain and an output port Aout that amplifies the input port Ain The RF signals in each frequency band are transmitted to the fundamental impedance transformer 170 through the output terminal Aout.
MMMB PA 100 中的宽带放大器通道 110 可由 GaAs HBT, SiGe HBT , GaAs BiFET （ Bipolar & Field Effect transistor ，集成三极管和场效应管的工艺） , GaAs BiHEMT （ Bipolar & High Electron Mobility Transistor ，集成三极管和高电子迁移率晶体管的工艺） 、 SOI CMOS （ Silicon On Insulator Complementary Metal Oxide Semiconductor ，绝缘衬底硅互补金属氧化物半导体） 、 LDMOS （ Laterally Diffused Metal Oxide Semiconductor ，横向扩散金属氧化物半导体） 等器件或工艺以 MMIC （ Monolithic Microwave Integrated Circuit ，单片微波集成电路） 的形式实现。并以 SiP （ System in Package ，***级封装）、 flip-chip 、 LGA （ Land Grid Array ，栅格阵列封装）、 QFN （ Quad Flat No-leadPackage ，方形扁平无引脚封装）等多种封装形式，且与其它半导体芯片、 SMT 器件、基板和 / 或 lead frame （引脚框架）形成多芯片模块（ Multi Chip Model ， MCM ）形式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 The wideband amplifier channel 110 in the MMMB PA 100 can be made of GaAs HBT, SiGe HBT, GaAs BiFET (Bipolar & Field Effect transistor, process for integrating triode and field effect transistor), GaAs BiHEMT (Bipolar & High Electron Mobility Transistor, process for integrating triodes and high electron mobility transistors), SOI CMOS (Silicon On Insulator Complementary Metal Oxide Semiconductor , Insulating Substrate Silicon Complementary Metal Oxide Semiconductor), LDMOS (Laternally Diffused Metal Oxide Semiconductor) , lateral diffusion metal oxide semiconductor) and other devices or processes with MMIC ( Monolithic Microwave Integrated Circuit , monolithic microwave integrated circuit) implementation. And SiP (System in Package, system-in package), flip-chip, LGA (Land Grid Array, Grid Array Package, QFN (Qua Flat No-leadPackage) , quad flat no-lead package) and other packages, and form multi-chip modules with other semiconductor chips, SMT devices, substrates and / or lead frame (Multi) MMMB PA 100 in the form of Chip Model, MCM) or front-end module including MMMB PA 100.
控制器 120 接收并根据 来自于平台的 外部信号输出控制信号。控制器 120 与外部平台（例如是移动终端的操作平台）的控制接口与 GPIO 、 SPI 、 I2C 或 MIPI RFFE 等接口标准兼容，并可典型地由 SOI CMOS 、 Bulk Si CMOS （体硅互补金属氧化物半导体）等器件或工艺以 RFIC （ Qadio Frequency Integrated Chip ，射频芯片） /Analog IC （模拟芯片）方式实现，并以 SiP 、 flip-chip 、 LGA 、 QFN 等多种封装形式，且与其它半导体芯片、表面封装器件、基板和 / 或 lead frame 形成多芯片模块形式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 The controller 120 receives and outputs a control signal based on an external signal from the platform. Controller 120 The control interface with an external platform (such as the operating platform of a mobile terminal) is compatible with interface standards such as GPIO, SPI, I2C or MIPI RFFE, and is typically SOI CMOS Devices or processes such as Bulk Si CMOS (Bulk Silicon Complementary Metal Oxide Semiconductor) with RFIC (Qadio Frequency Integrated Chip) , RF chip) /Analog IC (analog chip) implementation, and with SiP, flip-chip, LGA, QFN MMMB PA 100 in the form of multi-chip modules and other MMMB PAs, and other semiconductor chips, surface mount devices, substrates and / or lead frames 100 front-end module.
参考图 1 ，基波阻抗变换器 170 包括各频带射频信号共用的第一节段 130 、各频带射频信号各自专用的第二节段 150 以及开关电路 140 ，开关电路 140 耦接于第一节段 130 和所述第二节段 150 之间，开关电路 140 受控制器 120 控制，第一节段 130 与宽带放大器通道 110 的输出端 Aout 连接，且第二节段 150 的输出端形成相应频段的最佳输出基波阻抗，开关电路 140 在控制器 120 的控制下，可切换地将经功率放大的射频信号分离至第二节段 150 以多路输出，其中每一路输出对应一个频带。 Referring to FIG. 1, a fundamental impedance transformer 170 includes a first segment 130 shared by radio frequency signals of respective frequency bands. a second segment 150 dedicated to each of the frequency band RF signals and a switch circuit 140 coupled between the first segment 130 and the second segment 150, the switch circuit 140 Controlled by controller 120, first segment 130 is coupled to output Aout of wideband amplifier channel 110, and second segment 150 The output terminal forms an optimum output fundamental impedance of the corresponding frequency band, and the switch circuit 140 switchesably separates the power amplified RF signal to the second segment under the control of the controller 120. Multiple outputs, each of which corresponds to a frequency band.
进一步地，第一节段 130 为共用匹配电路（标号同第一节段，为 130 ）、开关电路 140 为第一开关阵列（标号同开关电路，为 140 ），第二节段 150 为多个专用匹配电路，包括多个专用匹配电路 150a~d 。 最大限度共用宽带放大器通道 110 和基波阻抗变换器 170 的低基波阻抗的第一节段 130 ，将 第一开关阵列 140 设计在第一节段 130 和第二节段 150 的结合部，可极其方便地实施选择、调节、组合、合并从而形成针对各频段的完整的基波阻抗变换电路。 Further, the first segment 130 is a common matching circuit (labeled as the first segment, 130), and the switch circuit 140 The first switch array (labeled as the switch circuit, 140), the second segment 150 is a plurality of dedicated matching circuits, including a plurality of dedicated matching circuits 150a~d. Maximize sharing of wideband amplifier channels 110 and a first segment 130 of low fundamental impedance of the fundamental impedance transformer 170, the first switch array 140 is designed in the first segment 130 and the second segment 150 The combination is extremely convenient to implement selection, adjustment, combination, and combination to form a complete fundamental impedance conversion circuit for each frequency band.
共用匹配电路 130 的输入端与宽带放大器通道 110 的输出端 Aout 连接，对经功率放大的射频信号进行初级输出基波阻抗匹配后输出；多个专用匹配电路 150a~d 对相应频带的经初级输出基波阻抗匹配后的射频信号匹配到最佳输出基波阻抗后输出；第一开关阵列 140 包括多个第一开关器件 141~144 ，该多个第一开关器件 141~144 受控制器 120 控制，将相应频带的经初级输出基波阻抗匹配后的射频信号耦合到对应的专用匹配电路 150a~d 。 The input of the common matching circuit 130 and the output of the wideband amplifier channel 110 Aout Connecting, performing primary output fundamental impedance matching on the power amplified RF signal; and outputting multiple dedicated matching circuits 150a~d And outputting the RF signal matched by the primary output fundamental impedance matching of the corresponding frequency band to the optimal output fundamental impedance; the first switch array 140 includes a plurality of first switching devices 141 144 144, the plurality of first switching devices 141~144 are controlled by the controller 120 to couple the RF signals matched by the primary output fundamental impedance of the corresponding frequency band to the corresponding dedicated matching circuits 150a~d.
在其中一个实施例中，共用匹配电路 130 包括第一电感 131 和第一电容 132 ，第一电感 131 的一端接收经功率放大的射频信号，另一端与多个第一开关器件 141~144 的输入端连接并通过第一电容 132 接地。 In one embodiment, the common matching circuit 130 includes a first inductor 131 and a first capacitor 132, and the first inductor 131 One end receives the power amplified RF signal, and the other end is connected to the input terminals of the plurality of first switching devices 141-144 and grounded through the first capacitor 132.
本实施例中，共用匹配电路 130 的是由串联第一电感 131 与并联第一电容 132 的 LC 组合，该 LC 组合将宽带放大器通道 110 所需的 2~5Ω 的低基波阻抗转换至相对靠近 50Ω 的高基波阻抗。共用匹配电路（第一节段） 130 处于基波阻抗变换器 170 的低阻节段，所选择电路拓扑结构、匹配元件的自身损耗对 MMMB PA 的增功效率、线性度等性能指标有大的影响，因此公用第一节段 130 选用高 Q （ Quality ）值器件，它包括一个高 Q 值的第一电感 131 和一个的高 Q 值的第一电容 132 。其中，高 Q 值第一电感 131 可能实现方式包括一根或一组邦定线、基板集成电感器、片外 SMT 电感器中的一种或多种组合。以可同等但不限于本发明实施例中的拓扑结构与方式，其可能的变化至少包括拓扑结构意义上的元件位置、连接、个数等；高 Q 值的第一电容 132 的可能实现方式包括在片电容器、 SMT 电容器、基板集成电容器中的一种或多种组合。 In this embodiment, the common matching circuit 130 is combined with the LC of the series first inductor 131 and the parallel first capacitor 132. The LC combination converts the low fundamental impedance of 2~5Ω required by wideband amplifier channel 110 to a high fundamental impedance close to 50Ω. Shared matching circuit (first segment) 130 in fundamental impedance converter In the low-resistance section of 170, the selected circuit topology and the self-loss of the matching components have a large influence on the performance of the MMMB PA, such as the efficiency of the MMMB PA, and the linearity. Therefore, the common first segment 130 uses high Q ( A Quality value device that includes a high Q value of the first inductor 131 and a high Q value of the first capacitor 132. Where the high Q value first inductance 131 Possible implementations include one or a set of bonding wires, substrate integrated inductors, off-chip SMT One or more combinations of inductors. The possible changes include at least the position, connection, number, etc. of the components in the sense of the topology; the first capacitance of the high Q value, which may be equivalent, but not limited to, the topology and manner in the embodiments of the present invention. Possible implementations of 132 include one or more combinations of chip capacitors, SMT capacitors, and substrate integrated capacitors.
并且，公用的共用匹配电路 130 能以 SiP 、 flip-chip 、 LGA 、 QFN 等多种封装形式，且与其它半导体芯片、 SMT 器件、基板和 / 或 lead frame 形成 MCM 形式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 Also, the common common matching circuit 130 can be SiP, flip-chip, LGA, QFN MMMB PA 100 in MCM form or include MMMB PA in a variety of package formats and with other semiconductor chips, SMT devices, substrates and / or lead frames 100 front-end module.
本实施例中，基波阻抗变换器 170 仅包括的一个公用的共用匹配电路 130 ，适用于频段间距相对较小的 MMMB PA ，比如： 700MHz~915MHz (Bands 5 、 8 、 12 、 17~20 等 ) 或 1.7~2.7GHz (Bands 1~4 、 7 、 33~41 等 ) 的 MMMB PA 100 ，欲实现覆盖 700MHz~2.7GHz 多个倍频程的 MMMB PA 100 可考虑对通过本发明进行拓展，比如采用附加开关器件对公用的共用匹配电路 130 进行调节和 / 或采用 2 个或 2 个以上宽带放大器通道 110 同时在基波阻抗变换器 170 中使用 2 个或 2 个以上公用共用匹配电路 130 。 In this embodiment, the fundamental impedance transformer 170 includes only one common common matching circuit 130, which is suitable for relatively small band spacing. MMMB PA, such as: 700MHz~915MHz (Bands 5, 8, 12, 17~20, etc.) or 1.7~2.7GHz (Bands MMMB PA 100 of 1~4, 7, 33~41, etc., to achieve MMMB PA 100 covering multiple octaves from 700MHz to 2.7GHz Expansion of the invention may be considered, such as adjusting the common common matching circuit 130 with additional switching devices and/or employing two or more wideband amplifier channels 110. At the same time, two or more common common matching circuits 130 are used in the fundamental impedance transformer 170.
在其中一个实施例中，以专用匹配电路 150a 为例说明，专用匹配电路 150a 包括第二电感 151 和第二电容 155 ，第二电感 151 的一端与对应的第一开关器 141 件连接，接收初级输出基波阻抗匹配后的射频信号，第二电感 151 的另一端通过第二电容 155 接地，并输出已匹配到最佳输出基波阻抗的射频信号。 专用匹配电路 c~d 的具体结构与专用匹配电路 150a 相同，这里不再赘述。 In one of the embodiments, the dedicated matching circuit 150a is illustrated as an example, and the dedicated matching circuit 150a includes the second inductance 151. And a second capacitor 155, one end of the second inductor 151 is connected to the corresponding first switch 141, receives the RF signal of the primary output fundamental impedance matching, and the other end of the second inductor 151 passes the second capacitor 155 Ground and output a RF signal that has been matched to the optimum output fundamental impedance. The specific structure of the dedicated matching circuit c~d is the same as that of the dedicated matching circuit 150a, and will not be described here.
在其中一个实施例中，基波阻抗变换器 170 还包括多个可级联的定向耦合器 160 ，分别耦合到多个专用匹配电路 150a~d 的输出端，定向耦合器 160 精确指示各个输出功率的大小，实际设计中最好采用 EDA 工具的 EM 仿真器计入可级联的定向耦合器 161~164 的影响。 In one of the embodiments, the fundamental impedance transformer 170 further includes a plurality of cascadable directional couplers 160. And respectively coupled to the output ends of the plurality of dedicated matching circuits 150a~d, the directional coupler 160 accurately indicates the magnitude of each output power, and the EM of the EDA tool is preferably used in the actual design. The simulator counts the effects of cascadable directional couplers 161~164.
本实施例中，基波阻抗变换器 170 中包含有多个专用匹配电路 150a~d ，这些专用匹配电路 150a~d 与 MMMB PA 100 的输出各频段 Band_a~d 一一对应从而为各频段所专用。多个专用匹配电路 150a~d 的作用在于将公用第一节段 130 之后的相对靠近 50Ω 的基波阻抗精确转变到 50Ω 。也就是说，公用第一节段 130 通过开关阵列 140 与专用第二节段 150 的级联大体上为宽带放大器通道 110 在 Band_a~d 的各频段提供为达到 MMMB PA 100 性能所需最佳输出基波阻抗。 In this embodiment, the fundamental impedance converter 170 includes a plurality of dedicated matching circuits 150a~d, and these dedicated matching circuits 150a~d is one-to-one correspondence with the output bands of the MMMB PA 100, and is dedicated to each frequency band. The purpose of the plurality of dedicated matching circuits 150a~d is to share the first segment After 130, the fundamental impedance relative to 50Ω is accurately converted to 50Ω. That is, the common first segment 130 passes through the switch array 140 and the dedicated second segment 150 The cascading is generally the wideband amplifier channel 110 providing the best output fundamental impedance required to achieve MMMB PA 100 performance in each band of Band_a~d.
多个专用匹配电路 150a~d 的是由第二电感 151 、、 152 、 153 、 154 与第二电容 155 、 156 、 157 、 158 组成的多个 LC 组合，这些 LC 组合被精确设计，以便它们与公用第一节段 130 、第一开关阵列 140 、以及定相耦合器 160 共同作用，准确地将 MMMB PA 100 各频段输出端口 Band_a~d 处的 50Ω 标准基波阻抗转变为宽带放大器通道 110 所需的最佳输出基波阻抗，以使得 MMMB PA 100 能够在各频段各模式下达到包括增益、效率、线性度、杂散、稳定裕度、耐受性等在内的各项性能指标。 The plurality of dedicated matching circuits 150a~d are composed of the second inductors 151, 152, 153, 154 and the second capacitor Multiple LC combinations of 155, 156, 157, 158, these LC combinations are precisely designed so that they share the first segment 130, the first switch array 140 And the phasing coupler 160 work together to accurately convert the 50Ω standard fundamental impedance at the band_a~d of the MMMB PA 100 output band into a wideband amplifier channel. The optimum output fundamental impedance is required to enable the MMMB PA 100 to achieve performance metrics including gain, efficiency, linearity, spurs, stability margin, and tolerance in each mode.
实现多个专用匹配电路 150a~d 的 LC 组合具体实现形式上典型地包括单根或多根邦定线、 SMT 电感器，在片电感器、基板集成电感器、在片电容器， SMT 电容器以及基板集成电容器中的一种或多种组合。并且，专用第二节段 150 能以 SiP 、 flip-chip 、 LGA 、 QFN 等多种封装形式，且与其它半导体芯片、 SMT 器件、基板和 / 或 lead frame 形成 MCM 形式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 The implementation of the LC combination implementing multiple dedicated matching circuits 150a~d typically includes single or multiple bonding lines, SMT Inductor, one or more combinations of on-chip inductors, substrate integrated inductors, on-chip capacitors, SMT capacitors, and substrate integrated capacitors. And, the dedicated second segment 150 can be in SiP, Flip-chip, LGA, QFN and other package forms, and form MCM with other semiconductor chips, SMT devices, substrates and / or lead frames MMMB PA 100 or front-end module including MMMB PA 100.
此外，发射功率监控所需的可级联的定向耦合器 160 的个数与专用匹配电路 150a~d 的个数相同，图 1 至 3 示出的定向耦合器 160 包括 4 个，分别为 161 、 162 、 163 、 164 。该组可级联的定向耦合器 160 的实现包括采用 SiP 结构中的基板集成微带线、邦定线或 SMT 等形式。特别地，诸频段的可级联的定向耦合器 160 之间的连接形式并不局限于实施例中的串联方式，也可采用并联或串并联方式。 In addition, the number of cascadable directional couplers 160 required for transmit power monitoring is the same as the number of dedicated matching circuits 150a~d, Figure 1 The directional coupler 160 shown to 3 includes four, which are 161, 162, 163, and 164, respectively. The implementation of the set of cascadable directional couplers 160 includes the use of SiP The substrate in the structure is integrated with microstrip lines, bonding lines or SMT. In particular, cascadable directional couplers 160 of frequency bands The form of connection between them is not limited to the series connection in the embodiment, and parallel or series-parallel connection may also be employed.
第一开关阵列 140 被设计位于公用的第一节段 130 和专用的第二节段 150 之结合部。宽带放大通道 110 所需的 2~5Ω 低基波阻抗已经经由公用的第一节段 130 转换至相对靠近 50Ω 的高基波阻抗，在此***开关阵列 140 将极为有效地降低第一开关器件 141~144 所带来***损耗。 The first switch array 140 is designed to be located at the junction of the common first segment 130 and the dedicated second segment 150. Broadband amplification channel 110 The required 2~5Ω low fundamental impedance has been converted to a high fundamental impedance close to 50Ω via the common first segment 130, where the switch array 140 is inserted. The insertion loss caused by the first switching devices 141 to 144 is extremely effectively reduced.
第一开关阵列 140 响应来自控制器 120 的控制信号，选择、调节、组合、合并基波阻抗变换器 170 的公用的第一节段 130 和专用的第二节段 150 ，从而在宽带放大通道 110 的输出端 Aout 形成相应频段所需的最佳输出基波阻抗。 The first switch array 140 selects, adjusts, combines, and combines the fundamental impedance transformers 170 in response to control signals from the controller 120. The common first segment 130 and the dedicated second segment 150 provide the optimum output fundamental impedance required for the corresponding frequency band at the output Aout of the wideband amplification channel 110.
第一开关阵列 140 可由 SOI CMOS 、 GaAs pHEMT （ Pseudomorphic HEMT ，赝高电子迁移率晶体管）等器件构成，或以工艺 MMIC 的形式实现，如同但不限于图 1 至 3 实施例中的方式，其可能的变化至少开关器件个数差异等。并且，基波阻抗变换器 170 中的第一开关阵列 140 能以 SiP 、 flip-chip 、 wire bond （邦线）、 LGA 、 QFN 等多种封装形式，且与其它半导体芯片、 SMT 器件、基板、基板集成元件和 / 或 lead frame 形成 MCM 式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 The first switch array 140 can be implemented by SOI CMOS, GaAs pHEMT (Pseudomorphic Devices such as HEMTs, high electron mobility transistors), or in the form of process MMICs, like but not limited to Figures 1 to 3 In the embodiment, the possible variations are at least the difference in the number of switching devices and the like. Also, the first switch array 140 in the fundamental impedance converter 170 can be SiP, flip-chip, wire Bond (bond), LGA, QFN and other package forms, and form MCM with other semiconductor chips, SMT devices, substrates, substrate integrated components and / or lead frame The MMMB PA 100 or front-end module including the MMMB PA 100.
基波阻抗变换器 170 中的公用的第一节段 130 、专用的第二节段 150 、可级联级定向耦合器 160 的精确设计最好采用 ADS Momentum 、 Sonnet 、 IE3D 、 HFSS 等 EM （ Electro-Magenatic ，电磁场仿真）仿真工具，并与宽带放大通道 110 及开关阵列 140 实施电路 -EM 联合仿真。 Common first segment 130, dedicated second segment 150, cascadable stage directional coupler 160 in fundamental impedance transformer 170 The precise design is best to use ADS Momentum, Sonnet, IE3D, HFSS, etc. EM ( Electro-Magenatic , electromagnetic field simulation) simulation tool, and with the wideband amplification channel 110 and switch array 140 implementation circuit -EM co-simulation.
如图 2 、 3 所示，在另一个实施例中， MMMB PA 100 还包括第三开关阵列 105 ，第三开关阵列 105 包括多个受控制器 120 控制的第三开关器件 101~103 ，多个第三开关器件 101~103 的一端与宽带放大器通道 110 的输入端 Ain 耦接，向宽带放大器通道 110 提供接入的射频信号 RFin ，另一端（ RF 输入端口 Band_a 、 Band_bc 、 Band_d ）分别接收来自不同外部端口的单频或多频的射频信号 RFin 。 As shown in FIGS. 2 and 3, in another embodiment, the MMMB PA 100 further includes a third switch array 105. The third switch array 105 includes a plurality of third switching devices 101-103 controlled by the controller 120, one end of the plurality of third switching devices 101-103 and the wideband amplifier channel 110. The input terminal Ain is coupled to provide the RF signal RFin to the broadband amplifier channel 110, and the other end (RF input ports Band_a, Band_bc, Band_d) ) Receive single or multiple frequency RF signals RFin from different external ports.
图 2 描述一个多输入端口的 MMMB PA 100 的实施例。为与平台芯片组收发器的多个频信号 RFin 输出端口对接， MMMB PA 100 中增加第三开关阵列 105 ，它选择 MMMB PA 100 的 RF 输入端口 Band_a 、 Band_bc （可接入多频）、 Band_d 并随后将其连接至宽带放大器通道 110 的输入端口 Ain 。 Figure 2 depicts an embodiment of a MMMB PA 100 with multiple input ports. Multiple frequency signals for the transceiver with the platform chipset RFin The output port is docked. The third switch array 105 is added to the MMMB PA 100. It selects the RF input ports of the MMMB PA 100, Band_a, Band_bc. (Multi-frequency can be connected), Band_d and then connected to the input port Ain of the wideband amplifier channel 110.
第三开关阵列 205 可是为 SPnT 结构，可由 SOI CMOS 、 GaAs pHEMT 等器件或工艺以 MMIC 的形式实现，不限于本实施例中的方式，其可能的变化至少第三开关器件 101~103 的位置、个数、连接等差异。并且，第三开关阵列 105 能以 SiP 、 flip-chip 、 wire bond 、 LGA 、 QFN 等多种封装形式，且与其它半导体芯片、 SMT 器件、基板、基板集成元件和 / 或 lead frame 形成 MCM 式的 MMMB PA 100 或包括 MMMB PA 100 的前端模块。 The third switch array 205 can be an SPnT structure, which can be SOI CMOS, GaAs pHEMT The device or process is implemented in the form of an MMIC, and is not limited to the mode in the embodiment, and may vary at least the position, number, connection, and the like of the third switching device 101-103. And, the third switch array 105 can be used in various packages such as SiP, flip-chip, wire bond, LGA, QFN, and other semiconductor chips, SMT The device, substrate, substrate integrated components, and/or lead frame form the MCM-style MMMB PA 100 or front-end module including the MMMB PA 100.
须特别指出的是，第三开关阵列 205 通常仅需要切换低功率信号，对其在***损耗、线性度等方面的性能要求较低，可采用与宽带放大器通道 110 相同或相兼容的半导体工艺，并与宽带放大器通道 110 集成与同一芯片上。 It should be particularly noted that the third switch array 205 Usually only low power signals need to be switched, and their performance requirements in terms of insertion loss, linearity, etc. are low, and the same or compatible semiconductor process as the wideband amplifier channel 110 can be used, and the wideband amplifier channel 110 Integrated with the same chip.
MMMB PA 100 的 RF 输入端口 Band_a 、 Band_bc 、 Band_d 的设置一般遵从平台芯片组收发器。在本实施例中， RF 输入端口 Band_a 、 Band_bc 、 Band_d 具有可互换性。一般地，本实施例的 MMMB PA 100 结构中，经由 STnP （服务器网络时间协议）连接至同一个宽带放大器通道 100 的输入端 Ain 的诸输入端口具可互换性。 MMMB PA 100 RF input ports Band_a, Band_bc, Band_d The settings generally follow the platform chipset transceiver. In this embodiment, the RF input ports Band_a, Band_bc, and Band_d are interchangeable. Generally, the MMMB of this embodiment In the PA 100 architecture, the input ports connected to the input Ain of the same broadband amplifier channel 100 via STnP (Server Network Time Protocol) are interchangeable.
如图 3 所示，在又一个实施例中，基波阻抗变换器 170 还包括谐波阻抗调谐器 370 ，谐波阻抗调谐器 370 受控制器 120 控制，在宽带放大器通道 110 的输出端 Aout 形成相应频段的最佳输出谐波阻抗。 As shown in FIG. 3, in yet another embodiment, the fundamental impedance transformer 170 further includes a harmonic impedance tuner 370, a harmonic impedance tuner. The 370 is controlled by the controller 120 to form an optimum output harmonic impedance of the corresponding frequency band at the output Aout of the wideband amplifier channel 110.
进一步地，每个谐波阻抗调谐器 370 包括一个或多个 LC 谐振器和第二开关阵列，第二开关阵列包括一个或多个受控制器控制的第二开关器件； LC 谐振器的一端与宽带放大器通道的输出端耦合，另一端通过第二开关器件接地。如图 2 所示， LC 谐振器包括第三电感 372 、 373 和第三电容 371 ，第二开关阵列包括第二开关器件 374 、 375 。 Further, each harmonic impedance tuner 370 includes one or more LCs The resonator and the second switch array, the second switch array includes one or more second switching devices controlled by the controller; one end of the LC resonator is coupled to the output of the wideband amplifier channel, and the other end is grounded through the second switching device. As shown As shown in FIG. 2, the LC resonator includes a third inductor 372, 373 and a third capacitor 371, and the second switch array includes second switching devices 374, 375.
在宽带放大器通道 110 的输出端 Aout 增加一个谐波阻抗调谐器 370 。通常不含开关器件的固定谐波调节器只能在较窄频带内发挥作用，谐波阻抗调谐器 370 中引入第二开关器件 374 、 375 可起到宽带调节作用，使得 MMMB PA 100 在 Band_a~d 较宽频带内获得线性度和增功效率得提升。须指出的是， LC 谐振器在基波频率典型地呈电容特性，容抗相对较高，因此适当设计下第二开关器件 374 、 375 的损耗典型的可被忽略。 Add a harmonic impedance tuner to the output of the wideband amplifier channel 110, Aout 370 . Fixed harmonic regulators, which usually do not have switching devices, can only function in a narrower frequency band. The second switching device 374, 375 is introduced in the harmonic impedance tuner 370 to provide wideband regulation, making MMMB The PA 100 achieves improved linearity and power efficiency over a wider band of Band_a~d. It should be noted that LC The resonator typically has a capacitive characteristic at the fundamental frequency, and the capacitive reactance is relatively high, so the loss of the second switching device 374, 375 under proper design is typically negligible.
本实施例中，第三电容 371 为高 Q 值电容，第三电感 372 、 373 为高 Q 值电感，其中高 Q 值第三电感 372 、 373 可能实现方式包括一根或一组邦定线，基板集成电感器、片外 SMT 电感器中的一种或多种组合。不限于实施例中的拓扑结构与方式，其可能的变化至少包括拓扑结构意义上的元件位置、连接、个数等；高 Q 值的第三电容 371 的可能实现方式包括在片电容器、 SMT 电容器或基板集成电容器中的一种或多种组合。不限于本发明实施例中的拓扑结构与方式的组合，其可能的变化至少包括拓扑结构意义上元件的位置、连接、个数等。 In this embodiment, the third capacitor 371 is a high Q capacitor, and the third inductor 372 and 373 are high Q inductors, wherein the high Q Value third inductors 372, 373 Possible implementations include one or a set of bonding wires, substrate integrated inductors, off-chip SMT One or more combinations of inductors. It is not limited to the topology and mode in the embodiment, and the possible changes include at least the component position, connection, number, etc. in the sense of topology; the third capacitance of the high Q value 371 Possible implementations include chip capacitors, SMT One or more combinations of capacitors or substrate integrated capacitors. It is not limited to the combination of the topology and the mode in the embodiment of the present invention, and the possible changes include at least the position, connection, number, and the like of the components in the sense of the topology.
谐波调谐电路 370 中的第二开关器件 374 、 375 接受来自 MMMB PA 控制器 110 的一组控制信号，选择、调节、组合、合并谐波调谐电路 370 中的 LC 谐振器，从而在宽带功率放大器通道输出端口形成诸频段诸模式所需的最佳输出谐波阻抗。 The second switching device 374, 375 in the harmonic tuning circuit 370 accepts from the MMMB PA controller 110 a set of control signals that select, adjust, combine, and combine the LC in the harmonic tuning circuit 370 The resonator, thus forming the optimum output harmonic impedance required for the modes of the frequency bands at the wideband power amplifier channel output port.
事实上， MMMB PA 100 性能对最佳谐波输出阻抗的敏感性远大对最佳基波波输出阻抗的敏感性，这使得谐波输出阻抗调谐器通常不必要与输出频段一一对应。类似图 3 实施例所描述的具有两个第二开关器件 374 、 375 所控制的一对 LC 谐振器， LC 谐振器可提供至少 3 个有用的谐波调节状态，适用于频段间距相对较小的 MMMB PA 100 ，比如典型的 700MHz~915MHz (Bands 5 、 8 、 12 、 17~20 等 ) 或 1.7~2.7GHz (Bands 1~4 、 7 、 33~41 等 ) 的 MMMB PA 。通过巧妙设计，亦可拓展而覆盖一个倍频程的谐波调谐。。 In fact, MMMB PA 100 The sensitivity of the performance to the optimum harmonic output impedance is much greater than the sensitivity of the optimal fundamental wave output impedance, which makes it unnecessary for the harmonic output impedance tuner to have a one-to-one correspondence with the output band. Similar to Figure 3 A pair of LC resonators controlled by two second switching devices 374, 375 as described in the embodiment, the LC resonator can provide at least 3 A useful harmonic adjustment state for MMMB PA 100 with relatively small band spacing, such as typical 700MHz~915MHz (Bands 5, 8, 12, MMMB PA of 17~20, etc. or 1.7~2.7GHz (Bands 1~4, 7, 33~41, etc.) . Through clever design, it can also be extended to cover an octave harmonic tuning. .
可调宽带谐波调谐电路 370 中的第二开关器件 374 、 375 可与第一开关阵列 140 一体以相同的工艺设计。 The second switching device 374, 375 in the adjustable wideband harmonic tuning circuit 370 can be coupled to the first switch array 140 The whole is designed in the same process.
在进一步的实施例中，控制器 110 包括电压调节器，控制器 110 以电压调节器的输出电压为参考，输出包含模拟域和 / 或数字域的控制信号。 In a further embodiment, controller 110 includes a voltage regulator, controller 110 A control signal containing an analog domain and/or a digital domain is output with reference to the output voltage of the voltage regulator.
在一个实施例中，如图 4 所示，为与 GPIO 控制接口标准兼容的控制器 400 ，该控制器 400 通常由终端设备电源 Vbatt 供电，接受来自平台的一组数字控制信号 Vm1~i 和 Vb1~j 。结合图 3 、 4 ，该组信号中包含有 MMMB PA 100 的频段、模式选择并行方式的外部指令。这些指令被译码器 431 译码后，产生一组控制电压 Vctr1~k ，用于对宽带放大器通道 110 和第一开关阵列 140 、第二开关阵列 105 、和第三开关阵列（如图 3 ，包括 374 、 375 ）的控制。控制器 400 还包含一个或多个电压调节器 421 ，电压调节器 421 用于产生一个或一组参考电压，控制电压 Vctr1~k 以该（组）参考电压（中的若干个）为参考。当 MMMB PA 100 采用基于 GaAs HBT, SiGe HBT 等工艺的宽带放大器通道 110 时，该（组）参考电压（中的若干个）还被根据来自平台的一组数字控制信号 Vm1~i 和 Vb1~j 分派到控制器 400 的一组模拟控制信号 Vreg1~l ，该组模拟控制信号 Vreg1~l 输出端口与 MMMB PA 100 的模拟控制输出端口和 GaAs HBT 、 SiGe HBT 等工艺的形成的宽待放大器通道 110 的模拟受控端口相连，如基极偏置电路端口，从而，与控制电压 Vctrl1~k 共同完成对宽带放大器通道 110 控制。为使宽带放大器通道 110 在一定温度范围均发挥最佳性能，控制电压 Vctrl1~k 的输出端口采用 bandgap （带隙基准电路）等方式被设计成具有宽带放大器通道 110 所要求的最优温度系数。 In one embodiment, as shown in FIG. 4, a controller 400 that is compatible with the GPIO control interface standard, the controller 400 It is usually powered by the terminal power supply Vbatt and accepts a set of digital control signals Vm1~i and Vb1~j from the platform. Combined with Figures 3 and 4, the group of signals contains MMMB PA The frequency band of 100, the mode selects the external command in parallel mode. These instructions are decoded by decoder 431 to produce a set of control voltages Vctr1~k for the wideband amplifier channel 110 and the first switch array. 140, second switch array 105, and third switch array (as shown in Figure 3, including 374, 375). Controller 400 also includes one or more voltage regulators 421 The voltage regulator 421 is used to generate one or a set of reference voltages, and the control voltages Vctr1~k are referenced to the (group) reference voltages (several of them). When the MMMB PA 100 is based on In the wideband amplifier channel 110 of GaAs HBT, SiGe HBT, etc., the reference voltage (several) is also based on a set of digital control signals Vm1~i from the platform. Vb1~j is assigned to a set of analog control signals Vreg1~l of controller 400. The set of analog control signals Vreg1~l output port and MMMB PA 100 The analog control output port is connected to the analog controlled port of the wide amplifier amplifier channel 110 formed by processes such as GaAs HBT, SiGe HBT, etc., such as the base bias circuit port, and thus, the control voltage Vctrl1~k together complete control of the wideband amplifier channel 110. In order to maximize the performance of the wideband amplifier channel 110 over a range of temperatures, the output voltage of the control voltage Vctrl1~k is used. The bandgap (bandgap reference circuit) is designed to have the optimum temperature coefficient required by the wideband amplifier channel 110.
在另一个实施例中，如图 5 所示，为与 MIPI RF 前端（ Front-end ）控制接口标准兼容的控制器 500 。该控制器 500 通常由终端设备电源 Vbatt 供电，在时钟 SCLK 和参考电压 VIO 的参与下接受来自平台的一组串行数字控制信号 SDATA 。结合图 3 、 4 ，该串行数字控制信号 SDATA 中包含有 MMMB PA 100 的频段、模式选择并行方式的外部指令，该指令在时钟 SCLK 和参考电压 VIO 的参与下被写入一组寄存器 502 以暂存储，外部指令被译码器 503 译码后，产生一组控制电压 Vctr1~k ，用于对宽带放大器通道 110 和第一开关阵列 140 、第二开关阵列 105 、和第三开关阵列（如图 3 ，包括 374 、 375 ）的控制。控制器 500 还包含一个或多个电压调节器 501 ，用于产生一个或一组参考电压，控制电压 Vctr1~k 的典型地以该（组）参考电压（中的若干个）为参考。当 MMMB PA 100 采用基于 GaAs HBT 、 SiGe HBT 等工艺的宽待放大器通道时，该（组）参考电压（中的若干个）还被根据来自平台的一组数字控制信号 Vm1~i 和 Vb1~j 分派到 MMMB PA 100 控制器 500 的一组模拟控制信号 Vreg1~l ，该组模拟控制信号 Vreg1~l 输出端口与 MMMB PA 100 的模拟控制输出端口和 GaAs HBT 、 SiGe HBT 等工艺的形成的宽待放大器通道 110 的模拟受控端口相连，如基极偏置电路端口，从而，与控制电压 Vctrl1~k 共同完成对宽带放大器通道 110 控制。为使宽带放大器通道在一定温度范围均发挥最佳性能，控制电压 Vctrl1~k 的输出端口采用 bandgap 等方式被设计成具有宽带放大器通道 110 所要求的最优温度系数。 In another embodiment, as shown in Figure 5, for the MIPI RF front end (Front-end ) Control interface standard compatible controller 500. The controller 500 is typically powered by the terminal device power supply Vbatt, at clock SCLK and reference voltage VIO With the participation of a set of serial digital control signals SDATA from the platform. Combined with Figures 3 and 4, the serial digital control signal SDATA contains MMMB PA 100 The frequency band and mode select an external command in parallel mode. The instruction is written to a set of registers 502 for temporary storage with the participation of the clock SCLK and the reference voltage VIO, and the external command is decoded by the decoder 503. After decoding, a set of control voltages Vctr1~k is generated for the wideband amplifier channel 110 and the first switch array 140, the second switch array 105, and the third switch array (as shown in FIG. 3, 374, 375) control. The controller 500 also includes one or more voltage regulators 501 for generating one or a set of reference voltages, the control voltage Vctr1~k Typically referenced to this (set) reference voltage (several of these). When MMMB PA 100 is based on GaAs HBT, SiGe HBT When the process is a wide-ranging amplifier channel, the (group) reference voltage (several) is also assigned to the MMMB PA 100 controller based on a set of digital control signals Vm1~i and Vb1~j from the platform. A set of 500 analog control signals Vreg1~l, the set of analog control signals Vreg1~l output port and the analog control output port of MMMB PA 100 and GaAs HBT, The analog controlled port of the wide-to-amplifier channel 110 formed by a process such as SiGe HBT is connected, such as a base bias circuit port, thereby completing the wideband amplifier channel together with the control voltage Vctrl1~k 110 control. In order to maximize the performance of the wideband amplifier channel over a certain temperature range, the output port of the control voltage Vctrl1~k is designed to have a wideband amplifier channel using bandgap or the like. 110 The optimal temperature coefficient required.
尽管上述实施例公开的 MMMB PA 100 中的开关阵列（第一开关阵列 140 、第二开关阵列 105 、和第三开关阵列（如图 3 ，包括 374 、 375 ））通常可由控制电压 Vtr1~k 独立完成控制，而宽带放大器通道 110 的控制通常可由模拟信号 Vreg1~l 独立完成控制，但实质上还涵盖控制器 110 （ 400 、 500 ）所产生的一组模拟域和 / 或数字域信号共同控制宽带放大器通道 110 和开关阵列的方式。 Although the switch array (the first switch array 140 and the second switch array 105) in the MMMB PA 100 disclosed in the above embodiment And the third switch array (Fig. 3, including 374, 375)) can usually be independently controlled by the control voltages Vtr1~k, while the control of the wideband amplifier channel 110 can usually be controlled by analog signals. Vreg1~l independently completes the control, but essentially covers a set of analog domains and/or digital domain signals generated by controller 110 (400, 500) to jointly control the wideband amplifier channel. And the way the switch arrays.
与 SPI 、 I2C 控制接口标准兼容的控制器 110 和上述 MIPI RF 前端（ Front-end ）控制接口、 GPIO 控制接口标准兼容的控制器 110 相似，这里不再赘述。The controller 110 compatible with the SPI and I 2 C control interface standards is similar to the MIPI RF front-end control interface and the GPIO control interface standard compatible controller 110, and will not be described here.
此外，还提供了一种通信终端，包括上述的多模多频功率放大器（ MMMB PA ） 100 。该通信终端可以是手机、 PAD 、对讲机等。 In addition, a communication terminal including the above-described multimode multi-frequency power amplifier (MMMB PA) 100 is also provided . The communication terminal can be a mobile phone, a PAD, a walkie-talkie, or the like.
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。 The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. Within the scope.

Claims (11)

  1. 一种多模多频功率放大器，其特征在于，包括：A multimode multi-frequency power amplifier characterized by comprising:
    控制器，接收并根据外部信号输出控制信号；a controller that receives and outputs a control signal according to an external signal;
    宽带放大器通道，受所述控制器控制，输入端接收单频或多频的射频信号，对所述射频信号进行功率放大并通过输出端输出；The broadband amplifier channel is controlled by the controller, and the input end receives the single-frequency or multi-frequency RF signal, and the RF signal is amplified by the power and output through the output end;
    基波阻抗变换器，包括各频带射频信号共用的第一节段、各频带射频信号各自专用的第二节段以及开关电路，所述开关电路耦接于所述第一节段和所述第二节段之间，所述第一节段与所述宽带放大器通道的输出端连接，且所述第二节段的输出端形成相应频段的最佳输出基波阻抗，所述开关电路受所述控制器控制可切换地将经功率放大的所述射频信号分离至所述第二节段以多路输出，其中每一路输出对应一个频带。The fundamental impedance transformer includes a first segment shared by radio frequency signals of each frequency band, a second segment dedicated to each frequency band of each frequency band signal, and a switching circuit coupled to the first segment and the first Between two segments, the first segment is connected to an output end of the broadband amplifier channel, and an output end of the second segment forms an optimal output fundamental impedance of a corresponding frequency band, and the switching circuit is subjected to The controller controls switchably splits the power amplified RF signal to the second segment for multiple outputs, wherein each output corresponds to a frequency band.
  2. 根据权利要求 1 所述的多模多频功率放大器，其特征在于，The multimode multi-frequency power amplifier according to claim 1, wherein
    所述第一节段为共用匹配电路，所述共用匹配电路的输入端与所述宽带放大器通道的输出端连接，对经功率放大的所述射频信号进行初级输出基波阻抗匹配后输出；The first segment is a common matching circuit, and an input end of the common matching circuit is connected to an output end of the broadband amplifier channel, and the primary output impedance impedance matching is performed on the power amplified RF signal;
    所述第二节段为多个专用匹配电路，所述多个专用匹配电路对相应频带的经初级输出基波阻抗匹配后的射频信号匹配到最佳输出基波阻抗后输出；The second segment is a plurality of dedicated matching circuits, and the plurality of dedicated matching circuits output the RF signal matched by the primary output fundamental wave impedance of the corresponding frequency band to the optimal output fundamental impedance and output;
    所述开关电路为第一开关阵列，所述第一开关阵列包括多个第一开关器件，该多个第一开关器件受所述控制器控制，将相应频带的经初级输出基波阻抗匹配后的射频信号耦合到对应的所述专用匹配电路。The switching circuit is a first switch array, and the first switch array includes a plurality of first switching devices, and the plurality of first switching devices are controlled by the controller to match the primary output fundamental wave impedance of the corresponding frequency band The RF signal is coupled to the corresponding dedicated matching circuit.
  3. 根据权利要求 2 所述的多模多频功率放大器，其特征在于，所述共用匹配电路为低基波阻抗电路，所述专用匹配电路为高基波阻抗电路。According to claim 2 The multimode multi-frequency power amplifier is characterized in that the common matching circuit is a low fundamental impedance circuit, and the dedicated matching circuit is a high fundamental impedance circuit.
  4. 根据权利要求 2 所述的多模多频功率放大器，其特征在于，所述共用匹配电路包括第一电感和第一电容，所述第一电感的一端接收经功率放大的射频信号，另一端与多个所述第一开关器件的输入端连接并通过所述第一电容接地。According to claim 2 The multimode multi-frequency power amplifier, wherein the common matching circuit includes a first inductor and a first capacitor, and one end of the first inductor receives a power amplified RF signal, and the other end is coupled to the plurality of An input of the first switching device is coupled and grounded through the first capacitor.
  5. 根据权利要求 2 所述的多模多频功率放大器，其特征在于，所述基波阻抗变换器还包括谐波阻抗调谐器，所述谐波阻抗调谐器受所述控制器控制，在所述宽带放大器通道的输出端形成相应频段的最佳输出谐波阻抗。According to claim 2 The multimode multi-frequency power amplifier, characterized in that the fundamental impedance converter further comprises a harmonic impedance tuner, the harmonic impedance tuner being controlled by the controller, in the broadband amplifier channel The output forms the optimum output harmonic impedance of the corresponding frequency band.
  6. 根据权利要求 2 所述的多模多频功率放大器，其特征在于，所述基波阻抗变换器还包括所述多个可级联的定向耦合器，分别耦合到所述多个专用匹配电路的输出端。According to claim 2 The multimode multi-frequency power amplifier is characterized in that the fundamental impedance transformer further comprises the plurality of cascadable directional couplers coupled to the outputs of the plurality of dedicated matching circuits, respectively.
  7. 根据权利要求 2 所述的多模多频功率放大器，其特征在于，每个所述专用匹配电路包括第二电感和第二电容，所述第二电感的一端与对应的所述第一开关器件连接，接收初级输出基波阻抗匹配后的射频信号，所述第二电感的另一端通过所述第二电容接地，并输出已匹配到最佳输出基波阻抗的射频信号。According to claim 2 The multimode multi-frequency power amplifier is characterized in that each of the dedicated matching circuits includes a second inductor and a second capacitor, and one end of the second inductor is connected to the corresponding first switching device to receive the primary The fundamental wave impedance matched RF signal is output, and the other end of the second inductor is grounded through the second capacitor, and outputs a radio frequency signal that has been matched to the optimal output fundamental impedance.
  8. 根据权利要求 7 所述的多模多频功率放大器，其特征在于，每个所述谐波阻抗调谐器包括第二开关阵列和一个或多个 LC 谐振器，所述第二开关阵列包括一个或多个受所述控制器控制的第二开关器件；The multimode multi-frequency power amplifier of claim 7 wherein each of said harmonic impedance tuners comprises a second switch array and one or more LC a resonator, the second switch array comprising one or more second switching devices controlled by the controller;
    所述 LC 谐振器的一端与所述宽带放大器通道的输出端耦合，另一端通过所述第二开关器件接地。One end of the LC resonator is coupled to an output of the wideband amplifier channel, and the other end is grounded through the second switching device.
  9. 根据权利要求 1 所述的多模多频功率放大器，其特征在于，所述多模多频功率放大器还包括第三开关阵列，所述第三开关阵列包括多个受所述控制器控制的第三开关器件，所述多个第三开关器件一端与所述宽带放大器通道的输入端耦接，另一端分别接收来自不同外部端口的单频或多频的所述射频信号。According to claim 1 The multimode multi-frequency power amplifier, characterized in that the multimode multi-frequency power amplifier further comprises a third switch array, the third switch array comprising a plurality of third switching devices controlled by the controller, One end of the plurality of third switching devices is coupled to an input end of the wideband amplifier channel, and the other end receives the radio frequency signals of single or multiple frequencies from different external ports, respectively.
  10. 根据权利要求 1 所述的多模多频功率放大器，其特征在于，所述控制器包括电压调节器和译码器，所述控制器以所述电压调节器的输出电压为参考，输出包含模拟域和 / 或数字域的控制信号，所述译码器用于对外部指令进行译码。According to claim 1 The multimode multi-frequency power amplifier, characterized in that the controller comprises a voltage regulator and a decoder, the controller is based on an output voltage of the voltage regulator, and the output comprises an analog domain and / Or a digital domain control signal, the decoder is used to decode external instructions.
  11. 根据权利要求 10 所述的多模多频功率放大器，其特征在于，所述控制器还包括寄存器，所述寄存器用于存储所述外部指令。According to claim 10 The multimode multi-frequency power amplifier is characterized in that the controller further comprises a register for storing the external command.
PCT/CN2014/093426 2013-12-30 2014-12-10 Multi-mode multi-frequency power amplifier WO2015101147A1 (en)

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US15/853,950 US9973164B1 (en) 2013-12-30 2017-12-25 Power amplifier output power control circuit
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