WO2015085742A1 - 一种射频功率放大器、基站及阻抗调整方法 - Google Patents
一种射频功率放大器、基站及阻抗调整方法 Download PDFInfo
- Publication number
- WO2015085742A1 WO2015085742A1 PCT/CN2014/080118 CN2014080118W WO2015085742A1 WO 2015085742 A1 WO2015085742 A1 WO 2015085742A1 CN 2014080118 W CN2014080118 W CN 2014080118W WO 2015085742 A1 WO2015085742 A1 WO 2015085742A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power amplifier
- capacitor
- transmission line
- impedance
- output
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 77
- 239000003990 capacitor Substances 0.000 claims description 76
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
Definitions
- the present invention relates to the field of radio frequency technologies, and in particular, to a radio frequency power amplifier, a base station, and an impedance adjustment method. Background technique
- the RF power amplifier device manufacturer will perform input and output internal matching, thus making the RF power amplifier in the working frequency band.
- the formation of a resonant frequency outside causes the device to have potential instability near the resonant frequency. Under certain conditions, this unstable factor will also be excited, which will cause damage to the RF power amplifier in severe cases. Therefore, it is particularly important to improve the stability of the amplifier.
- the embodiments of the present invention provide a radio frequency power amplifier, a base station, and an impedance adjustment method.
- An embodiment of the present invention provides a radio frequency power amplifier, and an impedance adjustment circuit is disposed between an output transmission line and an output load of the radio frequency power amplifier;
- the impedance adjustment circuit is configured to adjust a load impedance of the RF power amplifier at a preset frequency point.
- the impedance adjusting circuit includes a transmission line; one end of the transmission line is connected to an output end of an output transmission line of the radio frequency power amplifier, and the other end is connected to an input end of an output load of the radio frequency power amplifier.
- the length of the transmission line is less than or equal to a half wavelength of the preset frequency point.
- the impedance adjustment circuit includes a first component, a second component, a first capacitor, and a second capacitor;
- One end of the first component is connected to an output end of an output transmission line of the radio frequency power amplifier, and the other end is connected to one end of the second component and one end of the first capacitor; the other end of the first capacitor is grounded
- the other end of the second component is connected to one end of the second capacitor, and the other end of the second capacitor is grounded.
- the first component and the second component each include an inductor and a microstrip line.
- An embodiment of the present invention further provides a base station, where the base station includes any of the radio frequency power amplifiers described above.
- the embodiment of the invention further provides an impedance adjustment method, comprising: setting an impedance adjustment circuit between an output transmission line of an RF power amplifier and an output load, and adjusting a load impedance at a preset frequency point.
- the impedance adjustment circuit includes a transmission line; and the load impedance at the preset preset frequency point is: adjusting a load impedance of the RF power amplifier at the preset frequency point by adjusting a length of the transmission line.
- the length of the adjustment transmission line is: adjusting the length of the transmission line to be less than or equal to a half wavelength of the preset frequency point.
- the impedance adjustment circuit includes a first component, a second component, a first capacitor, and a second capacitor; and the load impedance at the preset frequency point is adjusted by: adjusting the first element The values of the second component, the first capacitor, and the second capacitor adjust a load impedance of the RF power amplifier at the predetermined frequency point.
- the radio frequency power amplifier, the base station and the impedance adjustment method provided by the embodiments of the present invention provide an impedance adjustment circuit between the output transmission line and the output load of the radio frequency power amplifier to adjust the load impedance of the radio frequency power amplifier at a preset frequency point. It can improve the stability of the RF power amplifier while reducing the impact on the performance of the RF power amplifier in the operating band.
- 1 is a schematic structural diagram of a general RF power amplifier
- FIG. 2 is a schematic structural diagram of a structure of a radio frequency power amplifier according to an embodiment of the present invention
- FIG. 3 is a schematic structural diagram of a radio frequency power amplifier according to an embodiment of the present invention
- FIG. 4 is a schematic structural diagram of another radio frequency power amplifier according to an embodiment of the present invention
- FIG. An example schematic of the Smith circle
- FIG. 6 is a schematic structural diagram of a base station of a radio frequency power amplifier including an impedance adjustment circuit according to an embodiment of the present invention
- FIG. 7 is a schematic flow chart of a method for adjusting impedance of a radio frequency power amplifier according to an embodiment of the present invention. detailed description
- the RF power amplifier 100 includes: an input transmission line 11 connected in sequence, an input matching network 12, a power amplifier 13, an output matching network 14, and an output transmission line. 15 and output load 16;
- the basic theory of the analog circuit can equalize the RF power amplifier 100 to a two-port network; and, according to the magnitude of the load impedance, the power amplifier stable region and the unstable region can be determined by the Smith circle; the load impedance value of the two-port network The change will directly affect whether the RF power amplifier 100 is in a stable region.
- the RF power amplifier 100 when the RF power amplifier 100 operates outside the band of the operating band and is in an unstable region of the Smith circle, in order to prevent the generation of the self-oscillation, the RF power amplifier 100 avoids the unstable region of the Smith circle.
- the structure of the RF power amplifier 100 is improved.
- the RF power amplifier 100 can reduce the performance index of the RF power amplifier 100 in the operating band while avoiding the unstable region of the Smith circle. influences.
- an impedance adjustment circuit is disposed between an output transmission line and an output load of the radio frequency power amplifier, and the load of the radio frequency power amplifier at a preset frequency point is adjusted by the set impedance adjustment circuit. impedance.
- an RF power amplifier 200 having an impedance adjustment circuit according to an embodiment of the present invention includes: an input transmission line 11, an input matching network 12, a power amplifier 13, and an output.
- one end of the impedance adjusting circuit 21 is connected to the output end of the output transmission line 15 of the RF power amplifier 200, and the other end is connected to the input end of the output load 16 of the RF power amplifier 200.
- the load impedance can be changed by changing the impedance adjusting circuit 21, so that the RF power amplifier 200 is in the Working at the preset frequency, working on the Smith circle Stabilizing the area and working stably, thereby fundamentally improving the stability of the RF power amplifier 200 at a preset frequency point; wherein the preset frequency point is a frequency point with instability, according to actual needs at design time determine.
- the impedance adjusting circuit 21 can be realized by a transmission line, or can be realized by a circuit composed of a first component, a second component, a first capacitor, and a second capacitor, and has a simple design and is easy to implement.
- an RF power amplifier 300 having an impedance adjustment circuit includes: an input transmission line 11, an input matching network 12, and a power amplifier 13.
- the transmission line 31 functions as an impedance adjustment circuit.
- one end of the transmission line 31 is connected to the output end of the output transmission line 15 of the radio frequency power amplifier 300, and the other end is connected to the input end of the output load 16 of the radio frequency power amplifier 300; wherein, the transmission line 31 includes but is not limited to: a microstrip Lines, strip lines, suspended microstrips, and coaxial lines.
- the load impedance at the frequency point is set; wherein the length of the transmission line 31 is less than or equal to a half wavelength of the preset frequency point.
- the RF power amplifier 300 when the preset frequency point is 2.6 MHz, the RF power amplifier 300 is in an unstable region, and the length and width of the transmission line 31 are adjusted by a transmission line 31 having a length of 0.18 wavelength and a characteristic impedance of 40 ohms.
- the length of the transmission line 31 is ensured to be less than or equal to a half wavelength.
- the transmission line 31 can change the load impedance of the RF power amplifier 300 at 2.6 MHz, and finally the RF power amplifier 300 is in a stable region of the Smith circle to work stably.
- the transmission line 31 with different characteristic impedances plays a different role in adjusting the load impedance. Selecting a suitable characteristic impedance can reduce the effect of the transmission line 31 on the performance of the RF power amplifier 300 in the operating frequency band while improving the stability of the RF power amplifier 300.
- an RF power amplifier 400 having an impedance adjustment circuit includes: an input transmission line 11, an input matching network 12, and a power.
- the first capacitor 43 and the second capacitor 44 are configured to adjust a load impedance of the RF power amplifier at the preset frequency point.
- the first element 41, the second element 42, the first capacitor 43, and the second capacitor 44 together constitute an impedance adjustment circuit.
- one end of the first component 41 is connected to the output end of the output transmission line 15 of the RF power amplifier 400, the other end is connected to the second component 42-terminal and the first capacitor 43-terminal; the other end of the first capacitor 43 is grounded; The other end of the second element 42 is connected to one end of the second capacitor 44; the other end of the second capacitor 44 is grounded; wherein the first element 41 and the second element 42 each comprise an inductor and a microstrip line.
- the load impedance of the RF power amplifier 400 at the preset frequency point can be effectively adjusted by adjusting the values of the first component 41, the second component 42 and the first capacitor 43; wherein, the first component 41, the second component 42 and The value of the first capacitor 43 is determined according to the preset frequency point and the basic theory of the frequency selective network, and the second capacitor 44 is a bypass capacitor at the predetermined frequency point.
- the second inductor and the second capacitor 44 are not considered, according to the preset frequency point/there are:
- the value of the first inductor is the value of the first capacitor 43, and the value of the first inductor is calculated according to the requirement of the load impedance in the stable region of the Smith circle and the value of the preset frequency point/ The value of the first capacitor 43 is adjusted by the sum of the load impedance.
- FIG. 5 is a schematic diagram showing an example of a corresponding Smith circle of another RF power amplifier according to an embodiment of the present invention.
- a stability design of a high-power RF power amplifier 400 operating at 2.14 MHz is taken as an example for description.
- the shaded area in FIG. 5 represents the unstable region of the Smith circle corresponding to the RF power amplifier 400, and the blank area in FIG. 5 represents the stable region of the Smith circle corresponding to the RF power amplifier 400.
- M1 is in an unstable region of the Smith circle.
- the RF power amplifier 400 operates at the M1 point, in order to avoid The unstable region of the RF power amplifier 400 is turned on.
- the amplifier 400 is stable and has an insertion loss of -0.38 dB at 2.14 MHz, which is significantly reduced compared to the insertion loss of the RF power amplifier 400 operating at the M2 point, reducing the performance of the RF power amplifier 400 in the operating band. influences.
- the corresponding values can be calculated from the equivalent relationship of the microstrip line and the inductance and the basic theory of combining the microstrip lines.
- FIG. 6 is a schematic structural diagram of a base station including the radio frequency power amplifier having an impedance adjustment circuit according to an embodiment of the present invention.
- the base station 62 includes a radio frequency power amplifier 61 having an impedance adjustment circuit, and the radio frequency power amplifier 61.
- the method includes: an input transmission line 11, an input matching network 12, a power amplifier 13, an output matching network 14, an output transmission line 15, an output load 16, and an impedance adjustment circuit 21 disposed between the output transmission line 15 and the output load 16;
- the impedance adjusting circuit 21 may be implemented by the transmission line 31 or by a circuit composed of the first element 41, the second element 42, the first capacitor 43, and the second capacitor 44.
- the impedance adjusting circuit 21 When the impedance adjusting circuit 21 is realized by the transmission line 31, as shown in FIG. 3, one end of the transmission line 31 is connected to the output end of the output transmission line 15 of the radio frequency power amplifier 300, and the other end is connected to the input end of the output load 16 of the radio frequency power amplifier 300.
- the transmission line 31 includes but is not limited to: a microstrip line, a strip line, a suspended microstrip, and a coaxial line.
- the load impedance at the frequency point is set; wherein the length of the transmission line 31 is less than or equal to a half wavelength of the preset frequency point.
- the impedance adjusting circuit 21 When the impedance adjusting circuit 21 is realized by a circuit composed of the first element 41, the second element 42, the first capacitor 43, and the second capacitor 44, as shown in FIG. 4, the output of the first element 41 and the output of the radio frequency power amplifier 400
- the output end of the transmission line 15 is connected, the other end is connected to one end of the second element 42 and the end of the first capacitor 43; the other end of the first capacitor 43 is grounded; the other end of the second element 42 is connected to one end of the second capacitor 44;
- the other end of the capacitor 44 is grounded;
- the first element 41 and the second element 42 each comprise an inductor and a microstrip line.
- Adjusting the values of the first component 41, the second component 42 and the first capacitor 43 can effectively adjust the load impedance of the RF power amplifier 400 at the preset frequency point; wherein, the first component 41, the second component 42 and the The value of a capacitor 43 is determined according to the preset frequency point and the basic theory of the frequency selective network, and the second capacitor 44 is a bypass capacitor at the predetermined frequency point.
- the second inductor and the second capacitor 44 are not considered, according to the preset frequency point/there are:
- ⁇ is the value of the first inductor, which is the value of the first capacitor, and the value of the first inductor is calculated according to the requirement of the load impedance in the stable region of the Smith circle and the value of the preset frequency point.
- the value of a capacitor 43 is adjusted by adjusting the value of the sum.
- FIG. 7 is a schematic flowchart of a method for adjusting impedance of a radio frequency power amplifier shown in FIG. 3 and FIG. 4, and as shown in FIG. 7, the method includes:
- Step 701 setting an impedance adjustment circuit between an output transmission line and an output load of the radio frequency power amplifier
- the radio frequency power amplifier includes: an input transmission line 11, an input matching network 12, a power amplifier 13, an output matching network 14, an output transmission line 15, and an output.
- the load 16 and the impedance adjusting circuit 21 disposed between the output transmission line 15 and the output load 16; when the impedance adjusting circuit 21 is implemented by the transmission line 31, as shown in FIG. 3, the transmission line 31-end and the radio frequency power amplifier 300
- the output end of the output transmission line 15 is connected, and the other end is connected to the input end of the output load 16 of the RF power amplifier 300.
- the load impedance of the RF power amplifier at the preset frequency point is adjusted by adjusting the length of the transmission line, where
- the transmission lines include, but are not limited to, a microstrip line, a strip line, a suspended microstrip, and a coaxial line.
- the impedance adjusting circuit 21 When the impedance adjusting circuit 21 is implemented by a circuit composed of the first element 41, the second element 42, the first capacitor 43, and the second capacitor 44, as shown in FIG. 4, the input transmission line 11 and the input matching network 12 are included.
- One end of the first component 41 is connected to the output end of the output transmission line 15 of the RF power amplifier 400, the other end is connected to the second component 42-terminal and the first capacitor 43-terminal; the other end of the first capacitor 43 is grounded; The other end of the second element 42 is connected to one end of the second capacitor 44; the other end of the second capacitor 44 is grounded; wherein the first element 41 and the second element 42 each comprise an inductor and a microstrip line.
- Step 702 The set impedance adjustment circuit adjusts the load impedance at the preset frequency point.
- the preset frequency point is a frequency point in which instability exists, and is determined according to actual needs at the time of design;
- the load impedance of the RF power amplifier 300 at the preset frequency point can be effectively adjusted by adjusting the length of the transmission line 31.
- the length of the transmission line 31 is less than or equal to the pre-predetermined Set the half wavelength of the frequency point.
- the impedance adjusting circuit 21 When the impedance adjusting circuit 21 is realized by a circuit composed of the first element 41, the second element 42, the first capacitor 43, and the second capacitor 44, by adjusting the first element 41, the second The values of the component 42 and the first capacitor 43 can effectively adjust the load impedance of the RF power amplifier 400 at the predetermined frequency point; wherein the values of the first component 41, the second component 42, and the first capacitor 43 are based on The basic frequency theory of the preset frequency point and the frequency selection network is determined, and the second capacitor 44 is a bypass capacitor at the preset frequency point.
- the second inductor and the second capacitor 44 are not considered, according to the preset frequency point/there are:
- the value of the first inductor is the value of the first capacitor 43, and the value of the first inductor is calculated according to the requirement of the load impedance in the stable region of the Smith circle and the value of the preset frequency point/ The value of the first capacitor 43 is adjusted by the sum of the load impedance.
- the corresponding values can be calculated from the equivalent relationship of the microstrip line and the inductance and the basic theory of combining the microstrip lines.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP14870581.7A EP3082259A4 (en) | 2013-12-13 | 2014-06-17 | Radio-frequency power amplifier, base station, and impedance adjustment method |
JP2016539170A JP2017503409A (ja) | 2013-12-13 | 2014-06-17 | Rf電力増幅器、基地局及びインピーダンス調整方法 |
Applications Claiming Priority (2)
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CN201310690527.7 | 2013-12-13 | ||
CN201310690527.7A CN104716911A (zh) | 2013-12-13 | 2013-12-13 | 一种射频功率放大器、基站及阻抗调整方法 |
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WO2015085742A1 true WO2015085742A1 (zh) | 2015-06-18 |
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PCT/CN2014/080118 WO2015085742A1 (zh) | 2013-12-13 | 2014-06-17 | 一种射频功率放大器、基站及阻抗调整方法 |
Country Status (4)
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EP (1) | EP3082259A4 (zh) |
JP (1) | JP2017503409A (zh) |
CN (1) | CN104716911A (zh) |
WO (1) | WO2015085742A1 (zh) |
Families Citing this family (3)
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CN109302149B (zh) * | 2017-07-25 | 2023-04-07 | 中兴通讯股份有限公司 | 信号放大电路 |
CN108183694B (zh) * | 2018-01-15 | 2020-09-25 | 清华大学 | 负载可调的功率放大器 |
WO2023197116A1 (zh) * | 2022-04-11 | 2023-10-19 | 海能达通信股份有限公司 | 一种射频功率放大电路及通信设备 |
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Also Published As
Publication number | Publication date |
---|---|
JP2017503409A (ja) | 2017-01-26 |
EP3082259A1 (en) | 2016-10-19 |
CN104716911A (zh) | 2015-06-17 |
EP3082259A4 (en) | 2017-11-15 |
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