WO2015068672A1 - Agent mouillant et composition a polir pour semi-conducteur - Google Patents

Agent mouillant et composition a polir pour semi-conducteur Download PDF

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Publication number
WO2015068672A1
WO2015068672A1 PCT/JP2014/079161 JP2014079161W WO2015068672A1 WO 2015068672 A1 WO2015068672 A1 WO 2015068672A1 JP 2014079161 W JP2014079161 W JP 2014079161W WO 2015068672 A1 WO2015068672 A1 WO 2015068672A1
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Prior art keywords
water
soluble polymer
wetting agent
polishing
meth
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PCT/JP2014/079161
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English (en)
Japanese (ja)
Inventor
貴之 竹本
直彦 斎藤
松崎　英男
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東亞合成株式会社
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Priority to JP2015546633A priority Critical patent/JP6129336B2/ja
Publication of WO2015068672A1 publication Critical patent/WO2015068672A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/06—Other polishing compositions
    • C09G1/14—Other polishing compositions based on non-waxy substances
    • C09G1/16—Other polishing compositions based on non-waxy substances on natural or synthetic resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Definitions

  • the present invention relates to a wetting agent for semiconductors and a polishing composition, and more particularly to a wetting agent for semiconductors and a polishing composition used for final polishing of a silicon wafer.
  • Semiconductor devices using a silicon wafer as a substrate are widely used in information communication equipment such as personal computers and mobile phones, and digital home appliances such as digital cameras and televisions.
  • information communication equipment such as personal computers and mobile phones
  • digital home appliances such as digital cameras and televisions.
  • Wafers prior to device formation have defects such as smoothness and scratches. The so-called intactness requirement that does not exist is becoming increasingly severe.
  • CMP Chemical Mechanical Polishing
  • a polishing process called CMP (Chemical Mechanical Polishing)
  • CMP Chemical Mechanical Polishing
  • a polishing composition containing fine abrasive grains and a basic compound is used. While supplying this polishing composition to the surface of the polishing pad, the surface is polished by relatively moving the polishing pad in pressure contact with the wafer as the object to be polished.
  • the mechanical polishing by the abrasive grains and the chemical polishing by the basic compound proceed simultaneously, the wafer surface can be smoothed over a wide range with high accuracy.
  • high-precision smoothing is realized by performing polishing in 3 to 4 stages.
  • the polishing rate tends to be regarded as important.
  • the haze and COP Crystal Originated Particles of the wafer surface are suppressed, and further, agglomerated abrasive grains, polishing pad debris, and polishing are removed. Emphasis is also placed on the prevention of contamination caused by the adhesion of so-called particles such as silicon powder.
  • Patent Document 1 discloses a polishing composition comprising a water-soluble polymer compound having a molecular weight of 100,000 or more and water-soluble salts.
  • Patent Document 2 discloses a polishing composition containing a specific polyacrylamide derivative.
  • Patent Document 3 describes a polishing composition containing a water-soluble polymer compound, and describes that a cellulose derivative or polyvinyl alcohol can be used as the water-soluble polymer compound.
  • JP-A-2-158684 Japanese Patent No. 4915736 JP-A-11-116942
  • Patent Document 1 discloses only a homopolymer of N, N-dimethylacrylamide in the examples as specific examples of the polyacrylamide derivative, but the dispersibility of the abrasive grains is not sufficient.
  • the present invention has been made in view of such circumstances, and provides a wetting agent for semiconductor and a polishing composition effective in smoothing the wafer surface with high accuracy and effective in suppressing COP in surface polishing of a silicon wafer. It is an object to do.
  • the present inventors include a water-soluble polymer mainly composed of a structural unit derived from N- (meth) acryloylmorpholine and having substantially no cationic group. It has been found that the use of a wetting agent for semiconductors has an effect on smoothing the wafer surface after polishing and suppressing COP, and the present invention has been completed.
  • the present invention is as follows. [1] A semiconductor wetting agent containing a water-soluble polymer having 50 to 100 mol% of a structural unit derived from N- (meth) acryloylmorpholine and substantially free of a cationic group. [2] The semiconductor wetting agent according to [1], wherein the structural unit derived from N- (meth) acryloylmorpholine is 100 mol%. [3] The semiconductor wetting agent as described in [1] or [2] above, wherein the water-soluble polymer has a number average molecular weight in the range of 1,000 to 300,000.
  • [4] The method for producing a water-soluble polymer according to any one of [1] to [3], wherein a nonionic and / or anionic polymerization initiator is used as a polymerization initiator, and N—
  • a method for producing a water-soluble polymer comprising radically polymerizing 50 to 100 mol% of (meth) acryloylmorpholine and 0 to 50 mol% of another monomer.
  • a polishing composition comprising the semiconductor wetting agent according to any one of [1] to [3], water, abrasive grains, and an alkali compound.
  • the semiconductor wetting agent of the present invention has excellent adsorptivity to the wafer surface after polishing. For this reason, by using the polishing composition containing the semiconductor wetting agent, it is possible to increase the smoothness of the polished wafer surface and to suppress the COP because of excellent etching resistance. Furthermore, since the dispersibility of silica is also good, there are few scratches and surface roughness due to the agglomerated silica abrasive grains, and a wafer surface with excellent scratch resistance can be obtained.
  • (meth) acryl means acryl and methacryl
  • (meth) acrylate means acrylate and methacrylate
  • the “(meth) acryloyl group” means an acryloyl group and a methacryloyl group.
  • the wetting agent for semiconductors of the present invention contains a water-soluble polymer having 50 to 100 mol% of structural units derived from N- (meth) acryloylmorpholine and substantially free of a cationic group.
  • the structural unit derived from N- (meth) acryloylmorpholine is preferably in the range of 70 to 100 mol%, more preferably in the range of 90 to 100 mol%, and most preferably 100 mol%.
  • the structural unit derived from N- (meth) acryloylmorpholine has good adsorptivity to the wafer surface and excellent hydrolysis resistance.
  • the wetting agent for semiconductors containing a water-soluble polymer mainly composed of the structural unit exhibits excellent alkali resistance even when a polishing composition is formed with an alkali compound or the like, and the polishing composition The object exhibits good etching resistance.
  • N- (meth) acryloylmorpholine in addition to N- (meth) acryloylmorpholine, other monomers copolymerizable therewith may be used.
  • Other monomers are not particularly limited.
  • Acrylic acid alkyl esters Unsaturated acids such as (meth) acrylic acid, crotonic acid, maleic acid, itaconic acid and fumaric acid and their alkyl esters; Unsaturated acid anhydrides such as maleic anhydride; 2-acrylamide -Sulphonic acid group-containing monomers such as 2-methylpropanesulfonic acid and salts thereof; methyl (meth) acrylamide, ethyl (meth) acrylamide, n-propyl (meth) acrylamide, iso
  • the amount of these monomers used in the water-soluble polymer ranges from 0 to 50 mol%, preferably from 0 to 30 mol%, more preferably from 0 to 10 mol%.
  • the amount of other monomers used exceeds 50 mol%, the amount of N- (meth) acryloylmorpholine used is less than 50 mol%, so that the adsorptivity to the wafer is not sufficient, and the semiconductor wetting of the present invention The effect of the agent may not be obtained.
  • the water-soluble polymer of the present invention is substantially free of a cationic group. Since the cationic group is introduced by a monomer having a cationic group such as a quaternary ammonium base, an initiator, or the like, in the present invention, “substantially does not contain a cationic group” means that these components are raw materials. Means not using as.
  • the number average molecular weight (Mn) of the water-soluble polymer is preferably in the range of 1,000 to 300,000, more preferably in the range of 1,500 to 150,000, still more preferably 2,000 to The range is 100,000. If the number average molecular weight (Mn) is 1,000 or more, the wettability of the wafer is sufficiently secured, and if it is 300,000 or less, the dispersibility of the abrasive grains can be secured.
  • the number average molecular weight can be measured in terms of polystyrene using GPC (gel permeation chromatography, for example, HLC-8220, manufactured by Tosoh Corporation).
  • the molecular weight distribution (PDI) of the water-soluble polymer is narrow.
  • the value obtained by dividing the weight average molecular weight (Mw) by the number average molecular weight (Mn) is preferably 4.0 or less, more preferably 3.5 or less, and 3.0 or less. More preferably.
  • the molecular weight distribution (PDI) is 4.0 or less, sufficient wettability is exhibited, and deterioration in dispersibility of (silica) abrasive grains caused by a high molecular weight body can be avoided.
  • the water-soluble polymer in the present invention uses a nonionic and / or anionic polymerization initiator as a polymerization initiator in a polymerization solvent, N- (meth) acryloylmorpholine 50 to 100 mol%, and other monomers 0 It can be obtained by radical polymerization of ⁇ 50 mol%.
  • the polymerization method is not particularly limited, but the solution polymerization method is preferable because a water-soluble polymer can be obtained in a uniform state.
  • the polymerization solvent in the solution polymerization water or a mixed solvent composed of water and an organic solvent can be used.
  • the organic solvent include methanol, ethanol, isopropanol, acetone, and methyl ethyl ketone, and one or more of these may be used in combination.
  • any known nonionic and / or anionic polymerization initiator may be used, and a radical polymerization initiator is particularly preferably used.
  • the radical polymerization initiator include persulfates such as sodium persulfate, potassium persulfate and ammonium persulfate, hydroperoxides such as t-butyl hydroperoxide, water-soluble peroxides such as hydrogen peroxide, methyl ethyl ketone, and the like.
  • Ketone peroxides such as peroxide and cyclohexanone peroxide, dialkyl peroxides such as di-t-butyl peroxide and t-butylcumyl peroxide, t-butyl peroxypivalate, t-hexyl peroxypivalate, etc.
  • Oil-soluble peroxides such as peroxyesters, 2,2′-azobis [N- (2-carboxyethyl) -2-methylpropionamidine] hydrate, 2,2′-azobis [2- ( 2-Imidazolin-2-yl) propane], 2,2′-azobis [2- Water-soluble azo compounds such as til-N- (2-hydroxyethyl) propionamide] and 4,4′-azobis-4-cyanovaleric acid, 2,2′-azobisisobutyronitrile, 2,2′- Examples thereof include oil-soluble azo compounds such as azobis (2,4-dimethylvaleronitrile) and 2,2′-azobis (2-methylbutyronitrile).
  • the radical polymerization initiator may be used alone or in combination of two or more.
  • persulfates and water-soluble azo compounds are preferable, and water-soluble azo compounds are particularly preferable because the polymerization reaction can be easily controlled.
  • the ratio of the radical polymerization initiator used is not particularly limited, but is preferably 0.1 to 10% by mass based on the total weight of all monomers constituting the entire water-soluble polymer. A ratio of 1 to 5% by mass is more preferable, and a ratio of 0.2 to 3% by mass is more preferable.
  • the polymerization of the water-soluble polymer may be carried out in the presence of a chain transfer agent as necessary.
  • a chain transfer agent By using a chain transfer agent, the molecular weight of the water-soluble polymer can be appropriately adjusted.
  • the chain transfer agent known ones can be used.
  • an alkylthiol compound having an alkyl group having 2 to 20 carbon atoms is preferable from the viewpoint of good adsorbability to a wafer, more preferably one having an alkyl group having 4 to 20 carbon atoms, More preferred are those having 6 to 20 alkyl groups.
  • the preferred amount is 0.1 to 10% by weight, more preferably 0.5 to 5% by weight, based on the amount of all monomers.
  • the reaction temperature during polymerization is preferably 30 to 100 ° C, more preferably 40 to 90 ° C, and further preferably 50 to 80 ° C.
  • the semiconductor wetting agent of the present invention comprises the water-soluble polymer and water. It is preferable to use high-purity water so as not to impair the effect as a wetting agent. Specifically, it is preferable to use pure water, ultrapure water, or distilled water from which foreign ions are removed by filtration after removing impurity ions with an ion exchange resin.
  • the wetting agent may contain an organic solvent such as alcohol and ketone having high miscibility with water.
  • the ratio of the water-soluble polymer in the wetting agent for semiconductor is not particularly limited as long as it is a viscosity that can be easily handled as an aqueous solution, but is preferably in the range of 1 to 50% by mass, more preferably in the range of 3 to 40% by mass. The range of 30% by mass is more preferable.
  • the water-soluble polymer in the present invention is excellent in adsorptivity to the wafer surface and the like, and particularly exhibits high adsorptivity to the wafer surface in a state where the oxide film is completely removed. For this reason, when the semiconductor wetting agent of the present invention is used in the wafer surface treatment process, the smoothness of the polished wafer surface can be improved, and contamination caused by COP and particle adhesion can be reduced. The following mechanism is assumed as a reason why these effects can be obtained. Regarding the smoothness of the wafer surface, the water-soluble polymer in the semiconductor wetting agent is adsorbed on the wafer surface, so that the friction between the wafer surface and the abrasive grains is reduced in the mechanical polishing of CMP. For this reason, it is considered that the minute unevenness formed on the wafer surface by mechanical polishing is reduced and the smoothness is improved.
  • the polishing composition in mechanical polishing, the polishing composition is supplied to the wafer surface and the polishing pad is pressed against the wafer surface and rotated to physically polish the wafer surface. Therefore, the polishing pad is pressed against a portion other than the COP on the wafer surface and polished in a direction perpendicular to the wafer surface. As the mechanical polishing proceeds, the COP gradually decreases, and the COP disappears when the wafer surface is polished beyond the depth. Therefore, it is considered that the mechanical polishing shows the effect of reducing the number of COPs and the size thereof.
  • chemical polishing the polishing composition enters the COP during polishing, and the basic compound corrodes or etches the inside of the COP.
  • the polishing is performed in the direction perpendicular to the inner wall of the COP, it is considered that the COP on the wafer surface increases with the progress of chemical polishing.
  • the water-soluble polymer adsorbed on the wafer surface has a function of suppressing chemical polishing more than mechanical polishing. It is presumed that this tendency becomes stronger as the water-soluble polymer adsorbability to the wafer becomes higher, and as a result, a wafer surface having high smoothness and low COP can be obtained.
  • the surface is hydrophilized. Therefore, contamination due to adhesion of particles during polishing can also be prevented.
  • the present invention also provides a method for polishing a wafer by adsorbing such a water-soluble polymer to the wafer.
  • the water-soluble polymer is supplied as a semiconductor wetting agent containing water-soluble polymer and water, and includes the water-soluble polymer of the present disclosure, water, abrasive grains, and an alkali compound
  • the form which supplies polishing composition with respect to a wafer is contained.
  • the polishing composition of the present invention comprises the semiconductor wetting agent, water, abrasive grains, and an alkali compound.
  • the ratio of the semiconductor wetting agent in the polishing composition is not particularly limited, but it is preferable that the polishing composition has an appropriate viscosity for handling in CMP and adsorbing to the wafer surface.
  • the specific viscosity of the polishing composition is preferably in the range of 0.1 to 10 mPa ⁇ s, more preferably in the range of 0.3 to 8 mPa ⁇ s, and 0.5 to 5 mPa ⁇ s. More preferably, it is in the range.
  • the water-soluble polymer is preferably used in a range of 0.001 to 10% by mass, more preferably in a range of 0.005 to 5% by mass with respect to the entire abrasive composition.
  • colloidal silica or the like can be used as the abrasive grains.
  • its content in the polishing composition is preferably 0.1 to 50% by mass, more preferably 1 to 30% by mass, and 3 to 20% by mass. More preferably it is. If the usage-amount of colloidal silica is 0.1 mass% or more, the polishing rate of mechanical polishing will become favorable. Moreover, if it is 50 mass% or less, the dispersibility of an abrasive grain is hold
  • the average particle size of the corridal silica is appropriately selected from the required polishing rate and the smoothness of the polished wafer surface, but is generally in the range of 2 to 500 nm, preferably in the range of 5 to 300 nm. A range of ⁇ 200 nm is more preferable.
  • the alkali compound is not particularly limited as long as it is a water-soluble alkali compound, and alkali metal hydroxides, amines, ammonia, quaternary ammonium hydroxide salts, and the like can be used.
  • alkali metal hydroxide include potassium hydroxide, sodium hydroxide, rubidium hydroxide and cesium hydroxide.
  • amines include triethylamine, monoethanolamine, diethanolamine, triethanolamine, diisopropanolamine, ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylpentamine, and tetraethylpentamine.
  • the quaternary ammonium hydroxide salt examples include tetramethylammonium hydroxide, tetraethylammonium hydroxide, and tetrabutylammonium hydroxide. Among these, ammonia or a quaternary ammonium hydroxide salt is preferable from the viewpoint of less contamination of the semiconductor substrate.
  • the polishing composition of the present invention is preferably adjusted to have a pH of 8 to 13 by adding the alkali compound. More preferably, the pH range is adjusted to 8.5-12.
  • an organic solvent various chelating agents, a surfactant, and the like can be added to the polishing agent composition as necessary.
  • E.R. ⁇ Etching resistance (E.R.)> After measuring the weight of the wafer cut to 3 ⁇ 6 cm with a glass cutter, it was immersed in a 3% hydrofluoric acid aqueous solution for 20 seconds to remove the oxide film on the wafer surface, and then washed with pure water for 10 seconds. This process was repeated until the wafer surface was completely water repellent. Next, an etching chemical solution was prepared by adding a semiconductor wetting agent to ammonia water having an ammonia: water weight ratio of 1:19 so that the concentration of the water-soluble polymer was 0.18 wt%. The wafer was completely immersed in an etching chemical solution and left to stand at 25 ° C. for 12 hours for etching. From the wafer weight change before and after etching, the etching rate (E.R.) was calculated according to the following formula.
  • ⁇ Wettability> The oxide film on the wafer surface was removed by the same method as etching resistance, and then immersed in a 0.18 wt% water-soluble polymer solution for 5 minutes. After immersion, the surface of the wafer was pulled up using a tweezers so as to be perpendicular to the liquid level, and the water-repellent distance from the end of the wafer at the time when 10 seconds had passed was visually confirmed, and judged according to the following criteria.
  • ⁇ Water repellent distance 5 to 10 mm
  • ⁇ Water repellent distance> 10mm
  • ⁇ Wafer appearance> The wafer surface after etching was performed by the same method as the etching resistance was visually confirmed, and judged according to the following criteria. ⁇ : No roughening on the surface ⁇ : The surface is slightly rough ⁇ : The surface is extremely rough
  • a monomer aqueous solution in which 700 parts of N-acryloylmorpholine (manufactured by Kojin Co., Ltd., hereinafter referred to as “ACMO”) was dissolved in 1600 parts of pure water was dropped from the monomer introduction tube over 1 hour to perform polymerization.
  • a chain transfer agent aqueous solution in which 1.4 parts of 2-mercaptoethanol (manufactured by Wako Pure Chemical Industries, Ltd.) was dissolved in 140 parts of pure water was dropped from another introduction tube over 1 hour. After completion of the dropwise addition of each aqueous solution of the monomer and the chain transfer agent, polymerization was further performed at 80 ° C. for 2 hours.
  • This polymer 1 had a number average molecular weight (Mn) of 24,000 and a molecular weight distribution (PDI) of 2.4.
  • the polymerization rate calculated from GC was 100%.
  • Production Example 2 The same operation as in Production Example 1 was carried out except that no chain transfer agent was used, and Polymer 2 was obtained.
  • the Mn of the polymer 2 was 120,000 and the PDI was 3.0.
  • the polymerization rate was 99%.
  • Production Example 3 Polymer 3 was obtained in the same manner as in Production Example 2 except that the amount of ACVA used as the initiator was changed to 0.5 part.
  • the Mn of the polymer 3 was 250,000 and the PDI was 3.3.
  • the polymerization rate was 99%.
  • Production Example 4 Polymer 4 was obtained in the same manner as in Production Example 1 except that the monomers used were changed to ACMO 630 parts (82 mol%) and acrylic acid 70 parts (18 mol%). The Mn of the polymer 4 was 25,000 and the PDI was 2.5. The polymerization rate was 99%.
  • Production Example 5 A polymer 5 was obtained in the same manner as in Production Example 1 except that the monomers used were changed to ACMO 560 parts (60 mol%) and acrylic acid 140 parts (40 mol%). The Mn of the polymer 5 was 25,000 and the PDI was 2.4. The polymerization rate was 99%.
  • Production Example 6 In Production Example 1, the initiator used was 2,2′-azobis [2- (2-imidazolin-2-yl) propane] disulfate dihydrate (manufactured by Wako Pure Chemical Industries, Ltd., trade name “VA-”). 046B ”) was changed to 0.6 part, and the same operation was performed except that the polymerization temperature was changed to 60 ° C to obtain a polymer 6. The Mn of the polymer 6 was 25,000 and the PDI was 2.5. The polymerization rate was 99%.
  • Production Example 7 Polymer 7 was obtained in the same manner as in Production Example 1, except that the monomer used was changed to 420 parts (43 mol%) of ACMO and 280 parts (57 mol%) of acrylic acid. The Mn of the polymer 7 was 24,000, and the PDI was 2.4. The polymerization rate was 98%.
  • Production Example 8 A polymer 8 was obtained in the same manner as in Production Example 1 except that the monomer used was changed to 700 parts of N, N-dimethylacrylamide. The Mn of the polymer 8 was 22,000, and the PDI was 2.2. The polymerization rate was 99%.
  • Example 1 Water was added so that the concentration of the polymer 1 which is a water-soluble polymer was 15% by mass to prepare a semiconductor wetting agent. About the obtained wetting agent for semiconductors, etching resistance, wettability, wafer appearance and alkali resistance were evaluated. The results obtained are shown in Table 2. Also, 10.0 g of colloidal silica dispersion (primary particle system 30-50 nm, silica solid content 10%) adjusted to pH 10.0 by adding ammonia water and 0.1 g of the above-mentioned wetting agent for semiconductor were added. A composition for an abrasive was obtained. The obtained composition for abrasives was evaluated for silica dispersibility, and Table 2 shows the results.
  • colloidal silica dispersion primary particle system 30-50 nm, silica solid content 10%
  • Example 2 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 2 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Example 3 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 3 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Example 4 Water was added so that the concentration of the polymer 1 which is a water-soluble polymer was 10.5% by mass to prepare a wetting agent for semiconductor. About the obtained wetting agent for semiconductors, etching resistance, wettability, wafer appearance and alkali resistance were evaluated. The results obtained are shown in Table 2. Moreover, the composition for abrasive
  • polishing agents was obtained by operation similar to Example 1 using the said semiconductor wetting agent. The obtained composition for abrasives was evaluated for silica dispersibility, and Table 2 shows the results.
  • Example 5 Water was added so that the concentration of the polymer 1 which is a water-soluble polymer was 4.5% by mass, and a semiconductor wetting agent was prepared. About the obtained wetting agent for semiconductors, etching resistance, wettability, wafer appearance and alkali resistance were evaluated. The results obtained are shown in Table 2. Moreover, the composition for abrasive
  • polishing agents was obtained by operation similar to Example 1 using the said semiconductor wetting agent. The obtained composition for abrasives was evaluated for silica dispersibility, and Table 2 shows the results.
  • Example 6 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that 50% of the polymer 1 and 50% of the polymer 2 were used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Example 7 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 4 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Example 8 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 5 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Comparative Example 1 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 6 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Comparative Example 2 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 7 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Comparative Example 3 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that the polymer 8 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • Comparative Example 4 A wetting agent for semiconductor and an abrasive composition were prepared in the same manner as in Example 1 except that hydroxyethyl cellulose (manufactured by Wako Pure Chemical Industries, Ltd., weight average molecular weight 90,000) was used as the water-soluble polymer. went. The evaluation results obtained are shown in Table 2.
  • Comparative Example 5 A semiconductor wetting agent and an abrasive composition were prepared in the same manner as in Example 1 except that PVP K30 was used as the water-soluble polymer, and the same evaluation was performed. The evaluation results obtained are shown in Table 2.
  • HEC hydroxyethyl cellulose (manufactured by Wako Pure Chemical Industries, Ltd., weight average molecular weight 90,000)
  • PVP K30 Polyvinylpyrrolidone (manufactured by Tokyo Chemical Industry Co., Ltd.)
  • Examples 1 to 8 are experimental examples using the water-soluble polymer defined in the present invention, and because the adsorptivity to the wafer is high, results of excellent etching resistance, wettability and appearance to the wafer are obtained. ing. Moreover, it was confirmed that the silica dispersibility is excellent in the case of an abrasive composition. Above all, from the results of Examples 1, 7 and 8 using a water-soluble polymer having the same number average molecular weight and molecular weight distribution, Example 1 comprising 100 mol% of N- (meth) acryloylmorpholine is resistant to etching. The result was excellent, and the appearance on the wafer was also excellent.
  • Comparative Example 1 using a water-soluble polymer obtained with a cationic polymerization initiator resulted in a greatly inferior silica dispersibility.
  • Comparative Example 2 using a water-soluble polymer with a small proportion of N- (meth) acryloylmorpholine used was not sufficient in etching resistance and wettability, and the wafer appearance was inferior.
  • Comparative Example 3 is an experimental example using a water-soluble polymer composed of an amide compound different from N- (meth) acryloylmorpholine, but the results were greatly inferior in wettability and alkali resistance.
  • Comparative Examples 4 and 5 are examples using cellulose derivatives, which are water-soluble polymers used in conventional polishing compositions, but are satisfactory in terms of adsorptivity to the wafer surface and silica dispersibility. It wasn't.
  • the wetting agent for semiconductors of the present invention is excellent in the adsorptivity to the wafer surface after polishing, by using a polishing composition containing the wetting agent for semiconductors, the smoothness of the wafer surface after polishing is improved, and , COP can be suppressed. Furthermore, since the dispersibility of silica is also good, it is particularly useful as a composition for final polishing of silicon wafers.

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Abstract

La présente invention concerne un agent mouillant pour un semi-conducteur, l'agent mouillant comportant un polymère hydrosoluble qui est sensiblement exempt de groupes cationiques et qui comprend entre 50 et 100 mol % d'unités structurelles dérivés de N-(méth)acryloyle morpholine.
PCT/JP2014/079161 2013-11-08 2014-11-04 Agent mouillant et composition a polir pour semi-conducteur WO2015068672A1 (fr)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017002433A1 (fr) * 2015-07-01 2017-01-05 東亞合成株式会社 Agent mouillant pour polissage et composition liquide de polissage
WO2017170179A1 (fr) * 2016-03-31 2017-10-05 東亞合成株式会社 Composition de polissage et son procédé de production
WO2019087818A1 (fr) * 2017-11-06 2019-05-09 株式会社フジミインコーポレーテッド Composition pour polissage, et procédé de fabrication de celle-ci
WO2021182276A1 (fr) * 2020-03-13 2021-09-16 株式会社フジミインコーポレーテッド Composition de polissage

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105732541B (zh) * 2016-03-16 2018-07-03 无锡海特圣大光电材料科技有限公司 一种具有双官能度的单体及其制备方法
EP3605588A4 (fr) * 2017-03-31 2021-01-13 Fujimi Incorporated Composition de polissage

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112519A1 (fr) * 2005-04-14 2006-10-26 Showa Denko K.K. Composition de polissage
JP2007273680A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨組成物、及び、研磨方法
JP2008055591A (ja) * 2006-03-31 2008-03-13 Kohjin Co Ltd 加工速度向上剤及び該加工速度向上剤を含有した水溶性研磨・研削加工液
WO2009096495A1 (fr) * 2008-02-01 2009-08-06 Fujimi Incorporated Composition de polissage et procédé de polissage l'utilisant
JP2011519732A (ja) * 2008-04-18 2011-07-14 サン ゴバン アブレシブ インコーポレーティド 高空隙率研摩材物品およびその製造方法
JP2012044197A (ja) * 2005-11-11 2012-03-01 Hitachi Chem Co Ltd 酸化ケイ素用研磨剤、添加液および研磨方法
JP2013102176A (ja) * 2012-12-25 2013-05-23 Showa Denko Kk 研磨組成物

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171689A (ja) * 2009-07-07 2011-09-01 Kao Corp シリコンウエハ用研磨液組成物

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006112519A1 (fr) * 2005-04-14 2006-10-26 Showa Denko K.K. Composition de polissage
JP2012044197A (ja) * 2005-11-11 2012-03-01 Hitachi Chem Co Ltd 酸化ケイ素用研磨剤、添加液および研磨方法
JP2007273680A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨組成物、及び、研磨方法
JP2008055591A (ja) * 2006-03-31 2008-03-13 Kohjin Co Ltd 加工速度向上剤及び該加工速度向上剤を含有した水溶性研磨・研削加工液
WO2009096495A1 (fr) * 2008-02-01 2009-08-06 Fujimi Incorporated Composition de polissage et procédé de polissage l'utilisant
JP2011519732A (ja) * 2008-04-18 2011-07-14 サン ゴバン アブレシブ インコーポレーティド 高空隙率研摩材物品およびその製造方法
JP2013102176A (ja) * 2012-12-25 2013-05-23 Showa Denko Kk 研磨組成物

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017002433A1 (fr) * 2015-07-01 2017-01-05 東亞合成株式会社 Agent mouillant pour polissage et composition liquide de polissage
JPWO2017002433A1 (ja) * 2015-07-01 2018-02-01 東亞合成株式会社 研磨用濡れ剤及び研磨液組成物
WO2017170179A1 (fr) * 2016-03-31 2017-10-05 東亞合成株式会社 Composition de polissage et son procédé de production
JPWO2017170179A1 (ja) * 2016-03-31 2019-02-14 東亞合成株式会社 研磨用組成物及びその製造方法
WO2019087818A1 (fr) * 2017-11-06 2019-05-09 株式会社フジミインコーポレーテッド Composition pour polissage, et procédé de fabrication de celle-ci
JPWO2019087818A1 (ja) * 2017-11-06 2020-12-17 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
US11421131B2 (en) 2017-11-06 2022-08-23 Fujimi Incorporated Polishing composition and method for producing same
JP7303111B2 (ja) 2017-11-06 2023-07-04 株式会社フジミインコーポレーテッド 研磨用組成物およびその製造方法
US11976220B2 (en) 2017-11-06 2024-05-07 Fujimi Incorporated Polishing composition and method for producing same
WO2021182276A1 (fr) * 2020-03-13 2021-09-16 株式会社フジミインコーポレーテッド Composition de polissage

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