WO2015060185A1 - 温度制御機構、温度制御方法及び基板処理装置 - Google Patents
温度制御機構、温度制御方法及び基板処理装置 Download PDFInfo
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- WO2015060185A1 WO2015060185A1 PCT/JP2014/077524 JP2014077524W WO2015060185A1 WO 2015060185 A1 WO2015060185 A1 WO 2015060185A1 JP 2014077524 W JP2014077524 W JP 2014077524W WO 2015060185 A1 WO2015060185 A1 WO 2015060185A1
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- temperature control
- electrostatic chuck
- temperature
- power supply
- thyristors
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- 230000007246 mechanism Effects 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims abstract description 24
- 238000012545 processing Methods 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 27
- 230000003287 optical effect Effects 0.000 description 22
- 238000012546 transfer Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000009529 body temperature measurement Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 101100366711 Arabidopsis thaliana SSL13 gene Proteins 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 101100366561 Panax ginseng SS11 gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/18—Arrangement of controlling, monitoring, alarm or like devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0028—Regulation
- F27D2019/0034—Regulation through control of a heating quantity such as fuel, oxidant or intensity of current
- F27D2019/0037—Quantity of electric current
Definitions
- the present invention relates to a temperature control mechanism, a temperature control method, and a substrate processing apparatus.
- Patent Documents 1 to 4 disclose a mechanism in which a heater is incorporated in each of a plurality of regions of the electrostatic chuck, and each region is independently temperature controlled by each heater.
- a plurality of power sources are connected to the plurality of heaters on a one-to-one basis, and current is supplied from each power source to each heater.
- the electrostatic chuck when the electrostatic chuck is divided into, for example, concentric circular regions, locally high temperature or low temperature portions are generated in one region, and uniform temperature control in that region may be difficult. Moreover, there are cases where it is not possible to cope with a case where the temperature is to be locally adjusted. On the other hand, when the electrostatic chuck is divided into a large number of regions and the temperature is locally adjusted, it is necessary to provide a heater and a power source for each region in order to independently control the temperature of each region. It is not realistic in terms of increase in cost and cost.
- an object of one aspect is to provide a temperature control mechanism, a temperature control method, and a substrate processing apparatus capable of locally adjusting the temperature of an electrostatic chuck.
- a plurality of sets of heaters and thyristors provided at least one set corresponding to each of a plurality of subdivided areas of the electrostatic chuck on the mounting table on which the substrate is mounted;
- One power source for supplying current to the heater from the plurality of sets of thyristors;
- At least one set of filters provided in a power supply line for supplying power to the plurality of heaters from the one power supply, and removing high-frequency power applied to the power supply;
- a temperature control mechanism is provided.
- a plurality of sets of heaters and thyristors provided corresponding to each of a plurality of subdivided areas of the electrostatic chuck on which the substrate is placed, and one current for supplying current from the plurality of sets of thyristors to the heater
- a method Based on a plurality of signals input to the plurality of thyristors, a current to be diverted to a plurality of heaters paired with the plurality of thyristors is controlled.
- a temperature control method is provided.
- a plurality of sets of heaters and thyristors provided at least one set corresponding to each of a plurality of subdivided areas of the electrostatic chuck on the mounting table on which the substrate is mounted;
- One power source for supplying current to the heater from the plurality of sets of thyristors;
- At least one set of filters provided in a power supply line for supplying power to the plurality of heaters from the one power supply, and removing high-frequency power applied to the power supply;
- a substrate processing apparatus is provided.
- the temperature of the electrostatic chuck can be locally adjusted.
- FIG. 1 is an overall configuration diagram of a plasma processing apparatus according to an embodiment.
- FIG. 1 is an overall configuration diagram of a plasma processing apparatus 1 according to an embodiment.
- the plasma processing apparatus 1 is configured as a lower two-frequency capacitively coupled plasma etching apparatus, and has, for example, a cylindrical vacuum chamber (processing vessel) 10 made of aluminum whose surface is anodized (anodized). ing.
- the chamber 10 is grounded.
- a mounting table 12 on which a semiconductor wafer W (hereinafter referred to as a wafer W) as an example of a substrate is mounted.
- the mounting table 12 is made of a material such as aluminum Al, titanium Ti, or silicon carbide SiC, and is supported by a cylindrical support portion 16 that extends vertically upward from the bottom of the chamber 10 via an insulating cylindrical holding portion 14. Yes.
- a focus ring 18 made of, for example, silicon is disposed on the upper surface of the mounting table 12 and on the peripheral edge of the electrostatic chuck 40 in order to improve in-plane uniformity of etching.
- An exhaust path 20 is formed between the side wall of the chamber 10 and the cylindrical support portion 16.
- An annular baffle plate 22 is attached to the exhaust path 20.
- An exhaust port 24 is provided at the bottom of the exhaust path 20 and is connected to an exhaust device 28 via an exhaust pipe 26.
- the exhaust device 28 has a vacuum pump (not shown) and depressurizes the processing space in the chamber 10 to a predetermined degree of vacuum.
- a transfer gate valve 30 that opens and closes the loading / unloading port for the wafer W is attached to the side wall of the chamber 10.
- a first high frequency power supply 31 for ion attraction and a second high frequency power supply 32 for plasma generation are electrically connected to the mounting table 12 via a matching unit 33 and a matching unit 34.
- the first high frequency power supply 31 applies a low frequency suitable for drawing plasma ions into the wafer W on the mounting table 12, for example, a first high frequency power of 0.8 MHz, to the mounting table 12.
- the second high frequency power supply 32 applies a second high frequency power of a frequency suitable for generating plasma in the chamber 10, for example, 60 MHz, to the mounting table 12.
- the mounting table 12 also functions as a lower electrode.
- a shower head 38 which will be described later, is provided on the ceiling of the chamber 10 as an upper electrode having a ground potential. Thereby, the high frequency power from the second high frequency power supply 32 is capacitively applied between the mounting table 12 and the shower head 38.
- an electrostatic chuck 40 is provided for holding the wafer W with an electrostatic adsorption force.
- the electrostatic chuck 40 is obtained by sandwiching an electrode 40a made of a conductive film between a pair of insulating layers 40b or an insulating sheet, and a DC voltage source 42 is electrically connected to the electrode 40a via a switch 43. .
- the electrostatic chuck 40 attracts and holds the wafer W on the electrostatic chuck with a Coulomb force by the voltage from the DC voltage source 42.
- the heat transfer gas supply source 52 supplies a heat transfer gas such as He gas between the upper surface of the electrostatic chuck 40 and the back surface of the wafer W through the gas supply line 54.
- the shower head 38 at the ceiling includes an electrode plate 56 having a large number of gas vent holes 56a and an electrode support 58 that detachably supports the electrode plate 56.
- the gas supply source 62 supplies gas from the gas introduction port 60 a into the shower head 38 via the gas supply pipe 64, and is introduced into the chamber 10 through a number of gas vent holes 56 a.
- a magnet 66 extending annularly or concentrically is arranged to control plasma generated in the plasma generation space in the chamber 10 by magnetic force.
- a refrigerant pipe 70 is provided inside the mounting table 12.
- a refrigerant having a predetermined temperature is circulated and supplied to the refrigerant pipe 70 from the chiller unit 71 through the pipes 72 and 73.
- a plurality of heaters 75 are embedded in the electrostatic chuck 40. At least one heater 75 is provided for each zone when the electrostatic chuck 40 is divided into a plurality of zones (regions). Further, a large number of heaters 75 may be attached to the back surface of the electrostatic chuck 40 instead of being embedded in the electrostatic chuck 40.
- a desired AC voltage is applied to the heater 75 from the AC power supply 44. According to such a configuration, the wafer W can be adjusted to a desired temperature by cooling by the chiller unit 71 and heating by the heater 75. These temperature controls are performed based on commands from the control unit 80.
- the control unit 80 includes various units attached to the plasma processing apparatus 1, such as an exhaust device 28, an AC power source 44, a DC voltage source 42, an electrostatic chuck switch 43, first and second high frequency power sources 31, 32, and a matching unit. 33, 34, the heat transfer gas supply source 52, the gas supply source 62, and the chiller unit 71 are controlled. In addition, the control unit 80 acquires a temperature detected by a temperature measuring unit 77 such as a thermocouple attached to the back surface of the electrostatic chuck 40. The control unit 80 is also connected to a host computer (not shown).
- the control unit 80 includes a CPU (Central Processing Unit) (not shown) and storage areas such as a ROM (Read Only Memory), a RAM (Random Access Memory), and an HDD (Hard Disk Drive).
- the CPU executes plasma processing according to various recipes in which process procedures and process conditions are set.
- the storage area in which the recipe is stored can be realized as a RAM or a ROM using, for example, a semiconductor memory, a magnetic disk, or an optical disk.
- the recipe may be provided stored in a storage medium and read into a storage area via a driver (not shown), or may be downloaded from a network (not shown) and stored in the storage area. Good.
- a DSP Digital Signal Processor
- the function of the control unit 80 may be realized by operating using software, or may be realized by operating using hardware.
- the wafer W is adjusted to a desired temperature by cooling by the chiller unit 71 and heating by the heater 75. These temperature controls are performed based on a command from the control unit 80.
- the wafer W held on the transfer arm is opened into the chamber 10 by opening the gate valve 30.
- the wafer W is held by pusher pins (not shown), and is placed on the electrostatic chuck 40 when the pusher pins are lowered.
- the gate valve 30 is closed, an etching gas is introduced into the chamber 10 from the gas supply source 62 at a predetermined flow rate and flow rate ratio, and the pressure in the chamber 10 is reduced to a set value by the exhaust device 28. . Further, high frequency power of a predetermined power is supplied from the first high frequency power supply 31 and the second high frequency power supply 32 to the mounting table 12.
- a voltage is applied from the DC voltage source 42 to the electrode 40a of the electrostatic chuck 40 to fix the wafer W on the electrostatic chuck 40, and from the heat transfer gas supply source 52 to the upper surface of the electrostatic chuck 40 and the wafer W. Supply between the back side.
- the etching gas introduced in a shower form from the shower head 38 is turned into plasma by the high frequency power from the second high frequency power supply 32.
- plasma is generated in the plasma generation space between the upper electrode (shower head 38) and the lower electrode (mounting table 12), and the main surface of the wafer W is etched by radicals and ions in the plasma. Further, ions can be drawn toward the wafer W by the high frequency power from the first high frequency power supply 31.
- the wafer W is lifted and held by the pusher pin, the gate valve 30 is opened, and the transfer arm is loaded into the chamber 10, and then the pusher pin is lowered and the wafer W is held on the transfer arm. .
- the transfer arm goes out of the chamber 10, and the next wafer W is transferred into the chamber 10 by the transfer arm. By repeating this process, the wafer W is continuously processed.
- FIG. 2 shows an example in which the electrostatic chuck 40 according to one embodiment is subdivided into a number of regions.
- the electrostatic chuck 40 is subdivided into a large number of regions Z 1 to Z n (hereinafter collectively referred to as “regions Z”), and each region Z is independently temperature controlled.
- each region has a shape obtained by further subdividing a region divided into a ring shape in the circumferential direction into even circular arcs.
- the shape of this region is suitable for uniformly controlling the temperature of a disk-shaped wafer.
- region does not have a concentric area
- this region there is no ring-shaped region, and locally high-temperature or low-temperature portions hardly occur in the same region. Therefore, it is suitable for improving the in-plane uniformity of the temperature of the electrostatic chuck 40 and controlling the temperature of the wafer uniformly.
- the chip formed on the wafer is rectangular. Therefore, the shape of this region is that the temperature can be controlled for each chip by locally adjusting the temperature of each region Z by providing a rectangular region Z for each chip formed on the wafer. preferable.
- the electrostatic chuck 40 is subdivided into a large number of regions Z in which the temperature can be controlled independently. Thereby, the temperature of the surface of the electrostatic chuck 40 can be locally adjusted.
- the electrostatic chuck 40 is divided into a number of regions Z that are not concentric, and the temperature of each region Z is controlled independently. Thereby, the in-plane uniformity of the temperature of the electrostatic chuck 40 can be achieved.
- the numerous regions Z into which the electrostatic chuck 40 is subdivided may have any shape as long as it is a shape excluding concentric circles.
- the resistance value (heat generation amount) of the heater 75 with respect to the area of the region Z is preferably uniform among the plurality of regions Z, but need not be exactly the same.
- FIG. 3 is a diagram illustrating an example of the temperature control mechanism 100 according to an embodiment.
- the temperature control mechanism 100 is provided in the plasma processing apparatus 1 which is an example of a substrate processing apparatus.
- the temperature control mechanism 100 independently controls the temperature of each of a large number of regions Z into which the electrostatic chuck 40 is subdivided.
- the temperature control mechanism 100 according to the present embodiment includes at least one set of heater 75 and light trigger thyristor 76 corresponding to each of the multiple regions Z of the electrostatic chuck 40.
- the temperature control mechanism 100 according to the present embodiment has one AC power supply 44 and at least one set of filters 45.
- each of the regions Za to Zn is controlled in order to control the temperature of the electrostatic chuck 40 subdivided into n regions Za to Zn.
- a pair of heaters 75a to 75n (hereinafter collectively referred to as “heater 75”) and light trigger thyristors 76a to 76n (hereinafter collectively referred to as “light trigger thyristor 76”) are provided. It has been. However, the number of heaters 75 and light trigger thyristors 76 is not limited to this. If at least one set of heaters 75 and light trigger thyristors 76 is provided in each region, a plurality of sets of heaters 75 and light trigger thyristors 76 are provided. May be.
- the heater 75 is embedded in the electrostatic chuck 40 and the light trigger thyristor 76 is embedded in the mounting table 12.
- the heater 75 may not be embedded but may be a sheet-like heater attached to the back surface of the electrostatic chuck 40, for example.
- the optical trigger thyristor 76 is preferably embedded in the mounting table 12 or the electrostatic chuck 40 in consideration of the influence of the high frequency power applied to the mounting table 12.
- the temperature control mechanism 100 for example, as shown in FIG. 2, as an example of a large number of regions, current is supplied to the heaters 75 incorporated in 50 or more regions Z, and each region Z is separated. To allow local temperature control for each region Z. In such a mechanism, it is not realistic to install a power supply one-on-one with respect to the heaters 75 incorporated in each of the multiple regions Z from the viewpoint of an increase in power supply installation location and an increase in cost.
- one AC power supply 44 is provided for the plurality of sets of heaters 75a to 75n and the light trigger thyristors 76a to 76n.
- the optical trigger thyristor 76 is a transistor having a switching function to shunt current, and can cope with high power.
- the optical trigger thyristor 76 divides the current output from the AC power supply 44 corresponding to the input optical signal and supplies it to the heater 75.
- the optical trigger thyristor 76 is an example of a thyristor (transistor) that shunts a current output from the AC power supply 44 in accordance with an input signal. Since the optical signal eliminates noise due to high-frequency power, it is preferable to use an optical trigger thyristor 76 that can suppress malfunction.
- the AC power supply 44 divides the output current by the light trigger thyristors 76a to 76n and supplies a desired current to each of the heaters 75a to 75n. Since at least one heater 75 is embedded in each region Z, temperature control of each region Z can be performed independently by heat generation of each heater 75 by a desired current.
- the power source connected to the heater 75 incorporated in the region Z does not operate while the temperature adjustment of the region Z is unnecessary. , Resources cannot be used effectively.
- the current output from one AC power supply 44 is divided by the light trigger thyristors 76a to 76n and supplied to the heaters 75a to 75n.
- the AC power supply 44 has to supply a current to one of the plurality of heaters 75, and there is almost no time during which it does not operate. Therefore, in the temperature control mechanism 100 according to the present embodiment, the temperature of a large number of regions Z is controlled in parallel using one AC power supply 44, thereby increasing the operating rate of the AC power supply 44 and effectively using resources. be able to.
- a filter 45 is connected to a power supply line Ln that supplies power from the AC power supply 44 to the plurality of heaters 75.
- the at least one set of filters 45 includes a filter 45 i on the input side to the heater 75 and a filter 45 o on the output side.
- the filter 45 is formed of, for example, a coil, and protects the AC power supply 44 by removing high-frequency power applied to the AC power supply 44.
- the AC power supply 44 and the filter 45 since the AC power supply 44 and the filter 45 only need to be arranged one by one, an empty space is created below the mounting table 12, and the space can be used effectively.
- the temperature control mechanism 100 according to the present embodiment has been described above. Finally, the temperature control method according to the present embodiment will be described with reference to FIG.
- FIG. 4 is a flowchart illustrating an example of the temperature control method according to the embodiment.
- the electrostatic chuck 40 is divided into n regions Z 1 to Z n , the temperature of each region Z is independently controlled by optical signals 1 to n controlled by the control unit 80 as described below.
- the temperature measurement unit 77 may have any configuration as long as it has a function of detecting the temperature of each region.
- the temperature measurement unit 77 may detect the temperature of each region by scanning the back surface of the electrostatic chuck 40.
- the temperature measurement unit 77 may be a thermocouple or a temperature sensor provided in each region or a predetermined position of the electrostatic chuck 40.
- control unit 80 determines whether required temperature adjustment of the region Z 1 (step S12). If it is determined that temperature adjustment is not necessary, the process proceeds to step S14. On the other hand, when it is determined that temperature adjustment is necessary, the control unit 80 turns on the optical signal input to the optical trigger thyristor 76a from off (step S13), and proceeds to step S14.
- a predetermined current is supplied to the heater 75a built in the region Z 1, can be controlled regions Z 1 to a predetermined temperature by heating by the heater 75a.
- control unit 80 determines whether the variable i is larger than the number of areas n (step S14). When the variable i is smaller than or equal to the number of areas n, “1” is added to the variable i (step S15), the process returns to step S11, and the control unit 80 executes the steps S11 to S14 to execute the next area. Z temperature control is performed.
- variable i is 1 and is smaller than the number of regions n. Therefore, the process proceeds from step S14 to step S15, and the variable i becomes “2”.
- Control unit 80 then, by executing the steps S11 ⁇ S14, executes a temperature control process in the region Z 2. In this way, the control unit 80 repeatedly performs steps SS11 to S14 until the variable i becomes larger than n, so that the temperature adjustment of the regions Z 1 to Z n is performed independently. When the variable i becomes larger than the number of regions n , it is determined that the temperature adjustment for all the regions Z 1 to Z n has been performed, and this temperature control process is terminated.
- the temperature control mechanism 100 according to the present embodiment, the temperature control method using the temperature control mechanism 100, and the plasma processing apparatus 1 including the temperature control mechanism 100 have been described above.
- the electrostatic chuck 40 is subdivided into a number of regions Z that do not have concentric regions.
- Each region Z of the electrostatic chuck 40 is independently temperature controlled. Therefore, a configuration in which high temperature or low temperature portions are not likely to occur locally in the same region.
- the temperature control mechanism 100 is provided with at least one set of heaters 75 and light trigger thyristors 76 corresponding to each region Z.
- the controller 80 controls an optical signal input to each optical trigger thyristor 76.
- each region Z of the electrostatic chuck 40 is independently adjusted in temperature by heating the heater 75 using the current shunted from one AC power supply 44.
- the temperature of each region Z can be locally adjusted.
- the in-plane uniformity of the temperature of the electrostatic chuck 40 can be improved.
- a desired temperature distribution can be generated in the surface of the electrostatic chuck 40.
- control unit 80 adjusts the current supplied to the heater 75 in each region Z by pulse-controlling the optical signal.
- the method of controlling the signal input to the optical trigger thyristor 76 is not limited to this.
- the control unit 80 may control at least one of the pulse of the optical signal input to the optical trigger thyristor 76, the intensity of the optical signal, and the frequency of the optical signal. Thereby, the current supplied to the heater 75 in each region Z can be controlled.
- the optical signals input to the optical trigger thyristors 76a to 76n are controlled based on the temperature detected when the immediately preceding substrate is processed or the temperature detected in real time. May be.
- the temperature control mechanism, the temperature control method, and the substrate processing apparatus have been described in the above embodiment, but the temperature control mechanism, the temperature control method, and the substrate processing apparatus according to the present invention are not limited to the above embodiment.
- Various modifications and improvements are possible within the scope of the present invention.
- the substrate processing apparatus is applicable to plasma processing apparatuses such as an etching processing apparatus, an ashing processing apparatus, and a film forming processing apparatus.
- ICP inductively coupled plasma
- CCP capacitively coupled plasma
- HWP Helicon wave-excited plasma
- ECR Electron Cyclotron Resonance Plasma
- the substrate to be treated in the present invention is not limited to the (semiconductor) wafer used in the description in the above embodiment.
- a large substrate for a flat panel display, an EL element, or a solar cell It may be a substrate.
- Plasma processing apparatus 12 Mounting table 40: Electrostatic chuck 44: AC power supply 45: Filter 75: Heater 76: Optical trigger thyristor 80: Control unit Z: Electrostatic chuck area
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Abstract
Description
基板を載置する載置台上の静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、
前記複数組のサイリスタからヒータに電流を供給する一つの電源と、
前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタと、
を有する温度制御機構が提供される。
基板を載置する静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、前記複数組のサイリスタからヒータに電流を供給する一つの電源と、前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタとを有する温度制御機構を用いた温度制御方法であって、
前記複数のサイリスタへ入力する複数の信号に基づき、該複数のサイリスタと組になった複数のヒータに分流する電流を制御する、
温度制御方法が提供される。
基板を載置する載置台上の静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、
前記複数組のサイリスタからヒータに電流を供給する一つの電源と、
前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタと、
を有する基板処理装置が提供される。
まず、本発明の一実施形態に係るプラズマ処理装置1の全体構成について、図1を参照しながら説明する。図1は、一実施形態に係るプラズマ処理装置1の全体構成図である。プラズマ処理装置1は、下部2周波の容量結合型プラズマエッチング装置として構成されており、例えば表面がアルマイト処理(陽極酸化処理)されたアルミニウムからなる円筒形の真空チャンバ(処理容器)10を有している。チャンバ10は、接地されている。
次に、静電チャック40を細分化した多数の領域(ゾーン)の形状について、図2を参照しながら説明する。図2は、一実施形態に係る静電チャック40を多数の領域に細分化した例を示す。本実施形態では、静電チャック40が多数の領域Z1~Zn(以下、総称して「領域Z」ともいう。)に細分化され、各領域Zはそれぞれ独立して温度制御される。
次に、静電チャック40を温度制御する温度制御機構100について、図3を参照しながら説明する。図3は、一実施形態に係る温度制御機構100の一例を示した図である。温度制御機構100は、基板処理装置の一例であるプラズマ処理装置1に備えられている。
例えば、図3に示されるように、本実施形態にかかる温度制御機構100では、n個の領域Za~Znに細分化された静電チャック40を温度制御するために、領域Za~Znのそれぞれに対応して一組のヒータ75a~75n(以下、総称して「ヒータ75」ともいう。)及び光トリガサイリスタ76a~76n(以下、総称して「光トリガサイリスタ76」ともいう。)が設けられている。ただし、ヒータ75及び光トリガサイリスタ76の個数は、これに限られず、各領域に少なくとも1組のヒータ75及び光トリガサイリスタ76が設けられれば、複数組のヒータ75及び光トリガサイリスタ76が配設されてもよい。
図4は、一実施形態にかかる温度制御方法の一例を示したフローチャートである。静電チャック40をn個の領域Z1~Znに分けた場合、以下に説明するように、各領域Zは、制御部80により制御される光信号1~nにより独立して温度制御される。
12:載置台
40:静電チャック
44:交流電源
45:フィルタ
75:ヒータ
76:光トリガサイリスタ
80:制御部
Z:静電チャックの領域
Claims (7)
- 基板を載置する静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、
前記複数組のサイリスタからヒータに電流を供給する一つの電源と、
前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタと、
を有する温度制御機構。 - 前記静電チャックを細分化した複数の領域は、同心円状を除く形状に形成されている、
請求項1に記載の温度制御機構。 - 前記静電チャックを細分化した複数の領域は、円弧状又は矩形状に形成されている、
請求項1に記載の温度制御機構。 - 基板を載置する静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、前記複数組のサイリスタからヒータに電流を供給する一つの電源と、前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタとを有する温度制御機構を用いて、
前記複数のサイリスタへ入力する複数の信号に基づき、該複数のサイリスタと組になっている複数のヒータに分流する電流を制御する、
温度制御方法。 - 前記複数のサイリスタへ入力する複数の信号のパルス、強度及び周波数の少なくともいずれかを制御する、
請求項4に記載の温度制御方法。 - 基板処理の際に検出する温度又はリアルタイムに検出する温度と、前記静電チャックを細分化した複数の領域のそれぞれの設定温度とに基づき、前記複数のサイリスタへ入力する複数の信号を制御する、
請求項4に記載の温度制御方法。 - 基板を載置する載置台上の静電チャックを細分化した複数の領域のそれぞれに対応して少なくとも一組ずつ設けられた複数組のヒータ及びサイリスタと、
前記複数組のサイリスタからヒータに電流を供給する一つの電源と、
前記一つの電源から前記複数のヒータに電力を供給する電源ラインに設けられ、該電源に印加される高周波電力を除去する少なくとも一組のフィルタと、
を有する基板処理装置。
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Publication number | Publication date |
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US10199246B2 (en) | 2019-02-05 |
KR20160078332A (ko) | 2016-07-04 |
JP2015084350A (ja) | 2015-04-30 |
JP6100672B2 (ja) | 2017-03-22 |
KR102297164B1 (ko) | 2021-09-01 |
TWI635563B (zh) | 2018-09-11 |
US20160225645A1 (en) | 2016-08-04 |
TW201523786A (zh) | 2015-06-16 |
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