WO2015052220A1 - Kombiniertes waferherstellungsverfahren mit laserbehandlung und temperaturinduzierten spannungen - Google Patents
Kombiniertes waferherstellungsverfahren mit laserbehandlung und temperaturinduzierten spannungen Download PDFInfo
- Publication number
- WO2015052220A1 WO2015052220A1 PCT/EP2014/071512 EP2014071512W WO2015052220A1 WO 2015052220 A1 WO2015052220 A1 WO 2015052220A1 EP 2014071512 W EP2014071512 W EP 2014071512W WO 2015052220 A1 WO2015052220 A1 WO 2015052220A1
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- Prior art keywords
- solid
- layer
- solid body
- less
- radiation source
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000013532 laser treatment Methods 0.000 title description 2
- 239000007787 solid Substances 0.000 claims abstract description 140
- 230000007547 defect Effects 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 43
- 230000005855 radiation Effects 0.000 claims abstract description 35
- 229920000642 polymer Polymers 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims description 8
- 230000006378 damage Effects 0.000 claims description 6
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000005284 excitation Effects 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 claims description 3
- 238000011105 stabilization Methods 0.000 claims description 3
- 238000012876 topography Methods 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- AQLMHYSWFMLWBS-UHFFFAOYSA-N arsenite(1-) Chemical compound O[As](O)[O-] AQLMHYSWFMLWBS-UHFFFAOYSA-N 0.000 claims 1
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 42
- 239000000463 material Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 241000951490 Hylocharis chrysura Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 241000960387 Torque teno virus Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910000154 gallium phosphate Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- -1 polydimethylsiloxanes Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B28D—WORKING STONE OR STONE-LIKE MATERIALS
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- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
- H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a method for producing solid-state layers according to the subject matter of claim 1 and to a wafer produced by this method (claim 13).
- wafers In many technical fields (e.g., microelectronics or photovoltaic technology), materials such as e.g. Silicon, germanium or sapphire, often used in the form of thin discs and plates (so-called wafers). By default, such wafers are currently produced by sawing from an ingot, resulting in relatively large material losses (“kerf-loss"). Since the starting material used is often very expensive, there are strong efforts to produce such wafers with less material and thus more efficient and cost-effective.
- kerf-loss material losses
- kerf-free wafering are methods that do without conventional sawing and, for example. by using temperature-induced voltages can directly split thin wafers from a thicker workpiece. These include, in particular, methods such as e.g. in PCT / US2008 / 012140 and PCT / EP2009 / 067539, where a polymer layer applied to the workpiece is used to generate these stresses.
- the polymer layer has in the mentioned method a compared to the workpiece by about two orders of magnitude higher thermal expansion coefficient.
- a relatively high modulus of elasticity in the polymer layer can be achieved, so that sufficiently high voltages can be induced in the layer system polymer layer workpiece by cooling in order to enable the removal of wafers from the workpiece.
- the wafers produced usually each have larger variations in thickness, wherein the spatial thickness distribution often shows a pattern with fourfold symmetry.
- the regions of greatest variability unfortunately lie in the middle of the wafer where they are most disturbing.
- DE 196 40 594 A1 discloses a process for separating semiconductor materials by means of light-induced interfacial decomposition and devices produced therewith, such as structured and freestanding semiconductor layers and components.
- the method according to DE 196 40 594 A1 includes the illumination of Interfaces between substrate and semiconductor layer or between semiconductor layers, whereby the light absorption at the interface or in an intended absorption layer for material decomposition leads.
- the selection of the interface or semiconductor layer, which is brought to decomposition, takes place by the choice of the wavelength of light and light intensity, the direction of irradiation or the incorporation of a thin sacrificial layer during material production.
- This method has the disadvantage that high energy doses must be used to destroy entire layers, whereby the energy requirements and thus the cost of the process are very high.
- EP000002390044B1, EP000001498215B1, EP000001494271 B1, EP000001338371 B1 disclose a method in which the laser is used for vertically separating workpieces.
- laser-assisted methods for generating defects within a wafer are known. With a focused laser multiphoton excitations are achieved in the depth, with which a damage in the depth is possible without damage to the material entry.
- ns pulse duration nanosecond pulse duration
- lasers with an ns pulse duration are used so that a strong interaction of the heated material with the laser can occur. Typically, this occurs via a photon-phonon interaction, which has a significantly higher absorption than the multi-photon excitation.
- Such a method is exemplified by Ohmura et. al. (Journal of Achievements in Materials and Manufacturing Engineering, 2006, vol 17, pp. 381 ff).
- the by Ohmura et al. The proposed wafer treatment serves to generate crack guide lines by a defect generation within the wafer, as they are partially provided when separating wafer elements of a wafer plate.
- the defects generated in this method extend in the vertical direction, as a result of which the connection structure between the individual wafer elements experiences elongated weakenings at right angles to the main surface of the wafer elements.
- the elongated weakenings have expansions of> 50 pm.
- the aforementioned object is achieved by a method according to claim 1 for producing solid-state layers.
- the method preferably comprises at least the steps of providing a workpiece or a solid for separating at least one solid layer, generating defects by means of at least one radiation source, in particular a laser, in particular an fs laser or femtosecond laser, in the internal structure of the A solid body for specifying a Ablöseebene along which the solid state layer is separated from the solid, arranging a recording layer for holding the solid state layer on the solid, the thermal loading of the recording layer for, in particular mechanical, generating stresses in the solid, which is due to the voltages Crack propagates in the solid along the Ablöseebene, which separates the solid state layer of the solid.
- the release layer or defect layer can be generated in the solid through which the crack propagates during the crack propagation, which results in the realization of very small TTVs, in particular less than 200 micrometers or 100 micrometers or less than 80 microns or less than 60 microns or less than 40 microns or less than 20 microns or less than 10 microns or less than 5 microns, especially 4, 3, 2, 1 microns.
- the radiation exposure of the wafer thus creates in a first step a kind of perforation in the interior of the solid, along which the crack propagation takes place in a second step or along which the solid-state layer is separated from the solid.
- the laser has a pulse duration of less than 10ps, more preferably less than 1ps, and most preferably less than 500fs.
- the stresses for detaching the solid-state layer are generated by the solid body by the thermal loading of the receiving layer, in particular a polymer layer, according to a preferred embodiment of the present invention.
- the thermal application preferably represents a cooling of the receiving layer or polymer layer to or below the ambient temperature and preferably below 10 ° C. and more preferably below 0 ° C. and more preferably below -10 ° C.
- the cooling of the polymer layer is most preferably such that at least a part of the polymer layer, which preferably consists of PDMS, undergoes a glass transition.
- the cooling may in this case be a cooling to below -100 ° C, e.g. is effected by means of liquid nitrogen.
- This embodiment is advantageous because the polymer layer contracts as a function of the temperature change and / or experiences a gas transfer and transfers the resulting forces to the solid, whereby mechanical stresses can be generated in the solid, which trigger a crack and / or crack propagation lead, wherein the crack propagates first along the first release plane for splitting off the solid layer.
- the solid body is disposed on a holding layer for holding the solid body, wherein the holding layer is disposed on a first planar surface portion of the solid, wherein the first planar surface portion of the solid body is spaced from a second planar surface portion of the solid the polymer layer is arranged on the second planar surface portion and wherein the release plane is aligned parallel to the first planar surface portion and / or the second planar surface portion or is generated in parallel.
- the solid body is arranged at least in sections and preferably completely between the holding layer and the polymer layer, whereby the stresses for crack generation or crack propagation into the solid body can be introduced by means of one of these layers or by means of both layers.
- At least or one radiation source is configured in accordance with another preferred embodiment of the present invention for providing the radiation to be introduced into the solid state such that the rays emitted by it generate the defects at predetermined locations within the solid state.
- This embodiment is advantageous because defects in the solid can be generated extremely accurately by means of a radiation source, in particular by means of a laser.
- wafering the process is commonly used to strip a thicker layer from an even thicker semiconductor block, typically a wafer (with the industry-specific thicknesses) from an ingot.
- Thinning uses the process to make a very thin layer from a wafer which is equivalent to the current process of grindings, but with the advantage that the unneeded material remains intact and can be reused.
- a clear separation of "thinning” and “wafering” is complicated because e.g.
- the "thinning” can also be done by acting on the back of a wafer, so that although a thin layer is formed, but the laser penetrates deep into the material.
- the radiation source is adjusted in accordance with a further preferred embodiment of the present invention such that the beams emitted by it to generate the Ablöseebene penetrate to a defined depth, in particular ⁇ 100pm, into the solid.
- the Ablöseebene spaced parallel to an outer and preferably flat surface of the solid is formed.
- the release plane is less than 100 microns, and preferably less than 50 microns, and more preferably less than or equal to 20, 10, 5, or 2 microns spaced from the planar surface of the solid within the solid.
- the release plane is preferably formed in the form of a plane created from defects, wherein the defects are formed less than 100 microns, and preferably less than 50 microns, and more preferably less than 20, 10 or 2 microns spaced from the planar surface of the solid within the solid ,
- the defects are formed less than 100 microns, and preferably less than 50 microns, and more preferably less than 20, 10 or 2 microns spaced from the planar surface of the solid within the solid ,
- the radiation source is adjusted in accordance with a further preferred embodiment of the present invention such that the rays emitted by it to generate the Ablöseebene to a defined depth, in particular> 100pm, penetrate into the solid.
- the Ablöseebene spaced parallel to an outer and preferably flat surface of the solid is formed.
- the release plane is more than 100 microns and preferably more than 200 microns, and more preferably more than 400 or 700 microns spaced from the planar surface of the solid formed within the solid.
- the release plane is preferably formed in the form of a plane created from defects, wherein the defects are formed more than 100 microns, and preferably more than 200 microns, and more preferably more than 400 or 700 microns spaced from the planar surface of the solid within the solid.
- the solid is subjected to a predetermined wavelength and / or power, wherein the predetermined wavelength is preferably adapted to the respective material or substrate.
- the predetermined wavelength is preferably adapted to the respective material or substrate.
- the solid has silicon and / or gallium or perovskite, and the polymer layer and / or the holding layer consist at least partially and preferably completely or more than 75% of polydimethylsiloxanes (PDMS) at least partially planar surface of a stabilizing device is arranged, which consists at least partially of at least one metal.
- the stabilizing device is preferably a plate, in particular a plate comprising or consisting of aluminum. This embodiment is advantageous because the solid state is defined or held by the stabilization device and the holding layer, as a result of which the stresses can be generated very accurately in the solid.
- the stresses in the solid body can be adjusted or generated in such a way that the crack initiation and / or the crack propagation is controllable for producing a topography of the surface resulting in the crack plane.
- the stresses are thus preferably in different areas of the solid preferably at least temporarily different strongly producible.
- This embodiment is advantageous since the topography of the generated or separated solid-state layer can be advantageously influenced by controlling the crack initiation and / or the crack progression.
- the defects provide at least one crack guiding layer, wherein the at least one crack guiding layer has a shape deviating from a planar shape.
- This solution is advantageous because the solid layers produced or the solids generated can have a different shape from a flat layer.
- planar layers but also three-dimensional bodies can be formed or produced from a workpiece by means of a crack propagation. Due to the manufacturing process, solids produced in this manner have a very advantageous surface which can be processed only slightly or not.
- optical elements such as e.g. a spade or a lens in a single-stage or multi-stage, in particular two or three-stage, split process produced.
- the shape of the crack guiding layer thus has according to a preferred embodiment of the present invention, at least in sections, the contour of a three-dimensional object, in particular a lens or a spade on.
- the defects are generated by a defect generator and the radiation source, respectively, wherein the defect generator is configured to generate the defects at a constant distance from the defect generator in the workpiece, with the workpiece and the defect generator being so relative to each other it is preferable that the defects generated by the defect generating device are generated in the crack guiding layer, whereby the defect generating device and the workpiece are repositioned only two-dimensionally with each other during the defect generation.
- the defect generating device is thus preferably repositioned relative to the workpiece or the workpiece is repositioned with respect to the defect generating device or the defect generating device and the workpiece are both repositioned to each other.
- This embodiment is advantageous since the radiation source or the defect-producing device only has to be repositioned for defect generation and no modification of the defect-generating device has to be effected, in particular no changed defect-introduction depth has to be determined and set.
- the defects are generated by a defect generating device and the radiation source, respectively, wherein the defect generating device is configured to generate the defects with a temporally varying distance to the defect generating device in the workpiece, depending on the distance of the defect generating device the defect to be generated at least temporarily a modification of the defect generating device is effected, in particular a changed defect introduction depth is determined and adjusted.
- This embodiment is advantageous because preferably no tilting device has to be provided for tilting the workpiece.
- the solid preferably comprises a material or combination of materials from one of the major groups 3, 4 and 5 of the Periodic Table of the Elements, e.g. Si, SiC, SiGe, Ge, GaAs, InP, GaN, Al 2 O 3 (sapphire), AlN. Particularly preferably, the solid has a combination of elements occurring in the third and fifth group of the periodic table. Conceivable materials or material combinations are e.g. Gallium arsenide, silicon, silicon carbide, etc. Further, the solid may comprise a ceramic (e.g., Al 2 O 3 - alumina) or may be made of a ceramic, preferred ceramics being e.g.
- Perovskite ceramics such as Pb, O, Ti / Zr containing ceramics
- lead magnesium niobates barium titanate, lithium titanate, yttrium aluminum garnet, especially yttrium aluminum garnet crystals for solid state laser applications, SAW ceramics ( surface acoustic wave), such as Lithium niobate, gallium orthophosphate, quartz, calcium titanate, etc. in particular.
- the solid body thus preferably has a semiconductor material or a ceramic material or particularly preferably the solid body consists of at least one semiconductor material or a ceramic material. It is further conceivable that the solid body comprises a transparent material or partially made of a transparent material, such as e.g. Sapphire, exists or is made. Other materials which may be used here as solid material alone or in combination with another material are e.g. "Wide band gap" materials, InAISb, high temperature superconductors, especially rare earth cuprates (e.g., YBa2Cu307).
- the radiation source or a part of the radiation source is designed as a femtosecond laser (fs laser).
- fs laser femtosecond laser
- the energy of the radiation source, in particular of the laser beam, in particular of the fs laser is selected so that the damage propagation in the solid or in the crystal is less than three times the Reyleighin, preferably smaller than the Reyleighin and particularly preferred is less than a third of the Reyleigh length.
- the wavelength of the laser beam is selected according to a further preferred embodiment of the present invention such that the absorption of the solid or of the material is less than 10 cm -1 and preferably less than 1 cm -1 and particularly preferably less than 0, 1 cm "1 is.
- the individual defects result according to a further preferred embodiment of the present invention in each case from one of the radiation source, in particular the laser, in particular a fs laser, caused multi-photon excitation.
- the invention further relates to a wafer which is produced by a method according to one of claims 1 to 12.
- Fig. 1 a shows a schematic structure for generating defects in a
- Figure 1 b is a schematic representation of a layer arrangement prior to the separation of a solid layer of a solid.
- Fig. 1 c is a schematic representation of a layer arrangement after the separation of a solid layer of a solid body
- Fig. 3 is a schematic representation of the release plane.
- a solid 2 and a substrate is shown, which is arranged in the region of a radiation source 18, in particular a laser.
- the solid body 2 preferably has a first planar surface portion 14 and a second planar surface portion 16, wherein the first planar surface portion 14 is preferably aligned substantially or exactly parallel to the second planar surface portion 16.
- the first planar surface portion 14 and the second planar surface portion 16 preferably define the solid 2 in a Y-direction, which is preferably oriented vertically or vertically.
- the flat surface portions 14 and 16 preferably extend in each case in an XZ plane, wherein the XZ plane is preferably aligned horizontally. Furthermore, it can be seen from this illustration that the radiation source 18 emits steel 6 onto the solid 2.
- a multilayer arrangement is shown, wherein the solid body 2 includes the Ablöseebene 8 and is provided in the region of the first planar area portion 14 with a holding layer 12, which in turn is preferably superimposed by another layer 20, wherein the further layer 20 preferably a stabilizing device, in particular a metal plate, is.
- a polymer layer 10 is preferably arranged at the second planar surface portion 16 of the solid 2.
- the polymer layer 10 and / or the holding layer 12 preferably consist at least partially and particularly preferably completely of PDMS.
- Fig. 1 c a state after a crack triggering and subsequent cracking is shown.
- the solid state layer 4 adheres to the polymer layer 10 and is spaced from the remainder of the solid 2 and spaced apart.
- FIGS. 2a and 2b show examples of the generation of a release plane 8 shown in FIG. 1a by the introduction of defects into a solid 2 by means of light beams.
- the present invention thus relates to a method for producing solid-state layers.
- the method according to the invention comprises at least the steps of providing a solid 2 for separating at least one solid layer 4, producing defects by means of at least one radiation source, in particular at least one laser, in particular at least one fs laser, in the internal structure of the solid for predetermining one Ablöseebene along which the solid state layer is separated from the solid, and the thermal impingement of a arranged on the solid 2 polymer layer 10 for, in particular mechanical, generating stresses in the solid 2, which is due to the tears a crack in the solid 2 along the Ablöseebene 8 propagates, which separates the solid state layer 4 of the solid 2.
- Fig. 2a is thus shown schematically how defects 34 in a solid state 2, in particular for generating a Ablöseebene 8 by means of a radiation source 18, in particular one or more lasers, in particular one or more fs laser, can be generated.
- the radiation source 18 emits radiation 6 having a first wavelength 30 and a second wavelength 32.
- the wavelengths 30, 32 are matched to one another or the distance between the radiation source 18 and the release plane 8 to be generated is tuned such that the waves 30 , 32 essentially or precisely on the Ablöseebene 8 coincide in the solid state 2, whereby at the location of the meeting 34 due to the energies of both waves 30, 32, a defect is generated.
- the defect can be produced by different or combined decomposition mechanisms such as sublimation or chemical reaction, wherein the decomposition can be initiated eg thermally and / or photochemically.
- FIG. 2 b shows a focused light beam 6, the focus of which is preferably in the release plane 8. It is conceivable here that the light beam 6 is focused by one or more focusing bodies, in particular lens / s (not shown).
- the solid body 2 is formed in this embodiment, multi-layered and preferably has a partially transparent or transparent substrate layer 3 or material layer, which preferably consists of sapphire or has sapphire.
- the light rays 6 pass through the substrate layer 3 to the release plane 8, which is preferably formed by a sacrificial layer 5, wherein the sacrificial layer 5 is acted upon by the radiation such that thermally and / or photochemically a partial or complete destruction of the sacrificial layer 5 in the focal point or in the region of the focal point is effected. It is also conceivable that the defects for producing the release layer 8 are generated in the region or precisely on an interface between two layers 3, 4.
- the solid state layer 4 is produced on a carrier layer, in particular a substrate layer 3, and by means of one or more sacrificial layers 5 and / or by the production of defects in an interface, in particular between the solid state layer 4 and the carrier layer, a Ablöseebene 8 for detaching or separating the solid state layer 4 can be generated.
- a release plane 8 is shown, the areas with different
- Defect concentrations 82, 84, 86 has. It is conceivable that a variety of
- Form areas with different defect concentrations form a release plane 8, which is also conceivable that the defects 34 are distributed in the release plane 8 substantially or exactly uniformly over the surface.
- the different ones are also conceivable that the defects 34 are distributed in the release plane 8 substantially or exactly uniformly over the surface.
- Defect concentrations may be the same size or different in size.
- a first increased defect concentration provides a crack initiation concentration
- Edge is generated adjacent. Additionally or alternatively, a
- Crack-guiding concentration 84 are formed such that the crack separating the solid-state layer 4 from the solid body 2 can be controlled or controlled. Furthermore, additionally or alternatively, a center concentration 86 can be generated, which preferably allows a very flat surface in the region of the center of the solid 2. Is preferred
- the crack guiding concentration 84 is partially or completely annular or enclosing and thus preferably encloses sections and more preferably completely the center of the solid 2 and the solid layer 4. It is also conceivable that the crack guiding concentration 84 in a starting from the edge of the solid 2 and in Towards the center of the solid 2 gradually or steadily or fluently decreases. Furthermore, it is conceivable that the crack guidance concentration 84 is formed band-like and homogeneous or substantially or exactly homogeneous.
- the method according to the invention thus preferably comprises the following steps:
- a radiation source in particular a laser, in particular an fs laser, or a defect generation device the defects provide a crack guiding layer
- attaching or forming a recording layer to the exposed surface of the workpiece to form a composite tempering the recording layer to create stresses within the workpiece, the stresses causing crack propagation within the workpiece, wherein the crack propagation forms a solid layer of the workpiece is separated along the crack
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Abstract
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US15/028,332 US10312135B2 (en) | 2013-10-08 | 2014-10-08 | Combined wafer production method with laser treatment and temperature-induced stresses |
KR1020167011993A KR102297306B1 (ko) | 2013-10-08 | 2014-10-08 | 레이저 처리 및 온도에 의한 스트레스에 의해 웨이퍼를 생산하는 방법 |
CN201480055772.3A CN105899325B (zh) | 2013-10-08 | 2014-10-08 | 借助于激光处理和温度诱导的应力的组合的晶片制造法 |
JP2016520685A JP6899653B2 (ja) | 2013-10-08 | 2014-10-08 | レーザー処理及び温度誘導ストレスを用いた複合ウェハー製造方法 |
EP14781231.7A EP3055098B1 (de) | 2013-10-08 | 2014-10-08 | Kombiniertes waferherstellungsverfahren mit laserbehandlung und temperaturinduzierten spannungen |
US16/378,902 US10593590B2 (en) | 2013-10-08 | 2019-04-09 | Combined wafer production method with laser treatment and temperature-induced stresses |
US16/793,429 US11004723B2 (en) | 2013-10-08 | 2020-02-18 | Wafer production method |
US17/221,098 US11699616B2 (en) | 2013-10-08 | 2021-04-02 | Method for producing a layer of solid material |
US18/202,698 US20230307286A1 (en) | 2013-10-08 | 2023-05-26 | Method for Producing a Layer of Solid Material |
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US10843380B2 (en) | 2015-04-09 | 2020-11-24 | Siltectra Gmbh | Method for the material-saving production of wafers and processing of wafers |
US11518066B2 (en) | 2015-04-09 | 2022-12-06 | Siltectra Gmbh | Method of treating a solid layer bonded to a carrier substrate |
JP2018509746A (ja) * | 2015-12-30 | 2018-04-05 | ハンズ レーザー テクノロジー インダストリー グループ カンパニー リミテッド | ウェハーのレーザー分離方法 |
US10515854B2 (en) | 2015-12-30 | 2019-12-24 | Han's Laser Technology Industry Group Co., Ltd. | Laser lift-off method of wafer |
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JP7271501B2 (ja) | 2016-01-05 | 2023-05-11 | ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 固体状物における改質の平面生成のための装置及び方法 |
CN109155248A (zh) * | 2016-03-24 | 2019-01-04 | 西尔特克特拉有限责任公司 | 用于在***方法中使用的聚合物杂化材料 |
CN109155248B (zh) * | 2016-03-24 | 2023-09-15 | 西尔特克特拉有限责任公司 | 用于在***方法中使用的聚合物杂化材料 |
US20210197314A1 (en) * | 2017-04-20 | 2021-07-01 | Siltectra Gmbh | Method for Reducing the Thickness of Solid-State Layers Provided with Components |
US11869810B2 (en) * | 2017-04-20 | 2024-01-09 | Siltectra Gmbh | Method for reducing the thickness of solid-state layers provided with components |
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US11699616B2 (en) | 2023-07-11 |
EP3055098B1 (de) | 2018-09-26 |
US20160254232A1 (en) | 2016-09-01 |
TWI637433B (zh) | 2018-10-01 |
EP3055098A1 (de) | 2016-08-17 |
TW201528357A (zh) | 2015-07-16 |
US20230307286A1 (en) | 2023-09-28 |
US11004723B2 (en) | 2021-05-11 |
CN105899325A (zh) | 2016-08-24 |
DE102014013107A1 (de) | 2015-04-09 |
US20200185267A1 (en) | 2020-06-11 |
US10593590B2 (en) | 2020-03-17 |
JP6899653B2 (ja) | 2021-07-07 |
TW201901791A (zh) | 2019-01-01 |
CN105899325B (zh) | 2019-10-18 |
TWI685892B (zh) | 2020-02-21 |
US20210225694A1 (en) | 2021-07-22 |
JP2017500725A (ja) | 2017-01-05 |
US20190237359A1 (en) | 2019-08-01 |
US10312135B2 (en) | 2019-06-04 |
KR20160068863A (ko) | 2016-06-15 |
KR102297306B1 (ko) | 2021-09-03 |
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