WO2015047492A3 - Photovoltaic lead-salt detectors - Google Patents

Photovoltaic lead-salt detectors Download PDF

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Publication number
WO2015047492A3
WO2015047492A3 PCT/US2014/043487 US2014043487W WO2015047492A3 WO 2015047492 A3 WO2015047492 A3 WO 2015047492A3 US 2014043487 W US2014043487 W US 2014043487W WO 2015047492 A3 WO2015047492 A3 WO 2015047492A3
Authority
WO
WIPO (PCT)
Prior art keywords
salt layer
salt
disposed
junction
layer
Prior art date
Application number
PCT/US2014/043487
Other languages
French (fr)
Other versions
WO2015047492A2 (en
Inventor
Zhisheng Shi
Jijun QIU
Binbin WENG
Original Assignee
The Board Of Regents Of The University Of Oklahoma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2013/075110 external-priority patent/WO2014093877A1/en
Application filed by The Board Of Regents Of The University Of Oklahoma filed Critical The Board Of Regents Of The University Of Oklahoma
Priority to CN201480034918.6A priority Critical patent/CN105324856B/en
Publication of WO2015047492A2 publication Critical patent/WO2015047492A2/en
Publication of WO2015047492A3 publication Critical patent/WO2015047492A3/en
Priority to US14/975,404 priority patent/US9887309B2/en
Priority to US14/975,285 priority patent/US10109754B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

An infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb )-salt layer disposed on a substrate and a charge-separation- junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment.
PCT/US2014/043487 2012-12-13 2014-06-20 Photovoltaic lead-salt detectors WO2015047492A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201480034918.6A CN105324856B (en) 2013-06-20 2014-06-20 photovoltaic lead salt detector
US14/975,404 US9887309B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt semiconductor detectors
US14/975,285 US10109754B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt detectors

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361837490P 2013-06-20 2013-06-20
US61/837,490 2013-06-20
USPCT/US2013/075110 2013-12-13
PCT/US2013/075110 WO2014093877A1 (en) 2012-12-13 2013-12-13 Polycrystalline photodetectors and methods of use and manufacture
US201461969975P 2014-03-25 2014-03-25
US61/969,975 2014-03-25

Related Parent Applications (3)

Application Number Title Priority Date Filing Date
PCT/US2013/075110 Continuation WO2014093877A1 (en) 2012-12-13 2013-12-13 Polycrystalline photodetectors and methods of use and manufacture
US14/975,404 Continuation US9887309B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt semiconductor detectors
US14/975,285 Continuation US10109754B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt detectors

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US14/975,404 Continuation-In-Part US9887309B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt semiconductor detectors
US14/975,285 Continuation-In-Part US10109754B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt detectors
US14/975,285 Continuation US10109754B2 (en) 2012-12-13 2015-12-18 Photovoltaic lead-salt detectors

Publications (2)

Publication Number Publication Date
WO2015047492A2 WO2015047492A2 (en) 2015-04-02
WO2015047492A3 true WO2015047492A3 (en) 2015-07-16

Family

ID=52744670

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/043487 WO2015047492A2 (en) 2012-12-13 2014-06-20 Photovoltaic lead-salt detectors

Country Status (2)

Country Link
CN (1) CN105324856B (en)
WO (1) WO2015047492A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129190B (en) * 2020-01-13 2021-03-02 李燕玲 Preparation process of battery element

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* Cited by examiner, † Cited by third party
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CN108585527A (en) * 2018-05-16 2018-09-28 武汉理工大学 A kind of Pb1-xSrxSe ternary quantum dots doped-glasses and preparation method thereof
CN109920863A (en) * 2019-01-28 2019-06-21 电子科技大学 Narrow bandgap semiconductor film, photodiode and preparation method
CN109873046B (en) * 2019-01-28 2020-09-11 电子科技大学 Double-heterojunction photosensitive diode and preparation method thereof
CN112331737B (en) * 2020-10-30 2022-05-03 苏州大学 Ultraviolet-visible-near infrared silicon-based photoelectric detector and preparation method thereof
CN113206184B (en) * 2021-04-30 2023-04-07 河北大学 Self-driven ultraviolet detector based on lead selenide film
CN113838964B (en) * 2021-09-15 2023-11-24 北京量子信息科学研究院 Superconducting-semiconductor nanowire heterojunction, preparation method thereof and device comprising superconducting-semiconductor nanowire heterojunction

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3904879A (en) * 1973-04-12 1975-09-09 Telecommunications Sa Photovoltaic infra-red detector
US3911469A (en) * 1974-02-25 1975-10-07 Texas Instruments Inc Method of forming P-N junction in PbSnTe and photovoltaic infrared detector provided thereby
US4154631A (en) * 1977-05-27 1979-05-15 The United States Of America As Represented By The Secretary Of The Navy Equilibrium growth technique for preparing PbSx Se1-x epilayers
US4183035A (en) * 1978-06-26 1980-01-08 Rockwell International Corporation Inverted heterojunction photodiode
US4870027A (en) * 1988-07-27 1989-09-26 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure
US4962303A (en) * 1989-06-27 1990-10-09 The United States Of America As Represented By The Secretary Of The Navy Infrared image detector utilizing Schottky barrier junctions
US4996579A (en) * 1983-02-04 1991-02-26 The United States Of America As Represented By The Secretary Of The Navy Design for electronic spectrally tunable infrared detector
US20040097021A1 (en) * 2000-10-19 2004-05-20 Augusto Carlos J.R.P. Method of fabricating heterojunction photodiodes integrated with cmos
US20090152664A1 (en) * 2007-04-18 2009-06-18 Ethan Jacob Dukenfield Klem Materials, Systems and Methods for Optoelectronic Devices
US20110146766A1 (en) * 2008-02-26 2011-06-23 Solar Cells Based On Quantum Dot Or Colloidal Nanocrystal Films Solar cells based on quantum dot or colloidal nanocrystal films
US8035184B1 (en) * 2008-09-25 2011-10-11 Banpil Photonics, Inc. Broadband imaging device

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3716424A (en) * 1970-04-02 1973-02-13 Us Navy Method of preparation of lead sulfide pn junction diodes
US3904879A (en) * 1973-04-12 1975-09-09 Telecommunications Sa Photovoltaic infra-red detector
US3911469A (en) * 1974-02-25 1975-10-07 Texas Instruments Inc Method of forming P-N junction in PbSnTe and photovoltaic infrared detector provided thereby
US4154631A (en) * 1977-05-27 1979-05-15 The United States Of America As Represented By The Secretary Of The Navy Equilibrium growth technique for preparing PbSx Se1-x epilayers
US4183035A (en) * 1978-06-26 1980-01-08 Rockwell International Corporation Inverted heterojunction photodiode
US4996579A (en) * 1983-02-04 1991-02-26 The United States Of America As Represented By The Secretary Of The Navy Design for electronic spectrally tunable infrared detector
US4870027A (en) * 1988-07-27 1989-09-26 The United States Of America As Represented By The Secretary Of The Navy Sensitization pretreatment of Pb-salt epitaxial films for Schottky diodes by sulfur vapor exposure
US4962303A (en) * 1989-06-27 1990-10-09 The United States Of America As Represented By The Secretary Of The Navy Infrared image detector utilizing Schottky barrier junctions
US20040097021A1 (en) * 2000-10-19 2004-05-20 Augusto Carlos J.R.P. Method of fabricating heterojunction photodiodes integrated with cmos
US20090152664A1 (en) * 2007-04-18 2009-06-18 Ethan Jacob Dukenfield Klem Materials, Systems and Methods for Optoelectronic Devices
US20110146766A1 (en) * 2008-02-26 2011-06-23 Solar Cells Based On Quantum Dot Or Colloidal Nanocrystal Films Solar cells based on quantum dot or colloidal nanocrystal films
US8035184B1 (en) * 2008-09-25 2011-10-11 Banpil Photonics, Inc. Broadband imaging device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111129190B (en) * 2020-01-13 2021-03-02 李燕玲 Preparation process of battery element

Also Published As

Publication number Publication date
WO2015047492A2 (en) 2015-04-02
CN105324856A (en) 2016-02-10
CN105324856B (en) 2017-11-28

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