WO2015020243A1 - Texture-etching solution composition for crystalline silicon wafers and texture-etching method - Google Patents

Texture-etching solution composition for crystalline silicon wafers and texture-etching method Download PDF

Info

Publication number
WO2015020243A1
WO2015020243A1 PCT/KR2013/007096 KR2013007096W WO2015020243A1 WO 2015020243 A1 WO2015020243 A1 WO 2015020243A1 KR 2013007096 W KR2013007096 W KR 2013007096W WO 2015020243 A1 WO2015020243 A1 WO 2015020243A1
Authority
WO
WIPO (PCT)
Prior art keywords
texture
cellulose
composition
crystalline silicon
etching
Prior art date
Application number
PCT/KR2013/007096
Other languages
French (fr)
Korean (ko)
Inventor
박면규
이재연
임대성
Original Assignee
동우화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우화인켐 주식회사 filed Critical 동우화인켐 주식회사
Priority to PCT/KR2013/007096 priority Critical patent/WO2015020243A1/en
Publication of WO2015020243A1 publication Critical patent/WO2015020243A1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers

Definitions

  • the present invention relates to a texture etching solution composition and a texture etching method of the crystalline silicon wafer that can improve the light efficiency by minimizing the texture quality variation of each position on the surface of the crystalline silicon wafer.
  • Solar cells which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source, and diffuse phosphorus on its surface based on P-type silicon semiconductors containing boron in silicon. It consists of the PN junction semiconductor substrate in which the N type silicon semiconductor layer was formed.
  • the surface of the solar cell silicon wafer constituting the PN junction semiconductor substrate is formed into a fine pyramid structure and the antireflection film is treated.
  • the surface of the silicon wafer textured with the fine pyramid structure increases the intensity of the light absorbed by lowering the reflectance of incident light having a wide wavelength band, thereby improving the performance of the solar cell.
  • U.S. Patent No. 4,137,123 discloses 0.5-10 weight in an anisotropic etching solution containing 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount of water.
  • a silicon texture etching solution in which% silicon is dissolved is disclosed.
  • this etchant can cause pyramid formation defects to increase the light reflectance and cause a decrease in efficiency.
  • European Patent No. 0477424 discloses a texture etching method of supplying oxygen to a texture etching solution in which silicon is dissolved in ethylene glycol, potassium hydroxide and residual water, that is, performing an air rating process.
  • this etching method has a disadvantage in that it causes poor pyramid formation, which leads to an increase in light reflectivity and a decrease in efficiency, and requires the installation of a separate air rating equipment.
  • Korean Patent No. 0180621 discloses a texture etching solution mixed at a ratio of 0.5-5% potassium hydroxide solution, 3-20% by volume of isopropyl alcohol, and 75-96.5% by volume of deionized water
  • US Patent No. 6,451,218 No. discloses a texture etching solution comprising an alkali compound, isopropyl alcohol, a water soluble alkaline ethylene glycol and water.
  • these etching solutions contain isopropyl alcohol having a low boiling point and need to be added during the texturing process, it is not economical in terms of productivity and cost, and the addition of isopropyl alcohol causes a temperature gradient of the etching solution, resulting in the surface of the silicon wafer.
  • the texture quality variation of each position may increase, resulting in poor uniformity.
  • Patent Document 1 US Patent Publication 4,137,123
  • Patent Document 2 European Patent Publication 0477424
  • Patent Document 3 Korean Registered Patent Publication 10-0180621
  • an object of the present invention is to provide a texture etching liquid composition of a crystalline silicon wafer that does not require the addition of a separate etching liquid component and the application of an air rating process during the etching process.
  • Another object of the present invention is to provide a texture etching method using the texture etching liquid composition of the crystalline silicon wafer.
  • a texture etching liquid composition of a crystalline silicon wafer comprising an inorganic salt of the general formula (1):
  • A is selected from the group consisting of NH 4 + , K + , Na + and Li + ;
  • B is SO 4 2- or PO 4 3- ;
  • y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ;
  • x and y are integers greater than zero.
  • the inorganic salt of Formula 1 is the first potassium phosphate (potassium phosphate monobasic), the second potassium phosphate (dipotassium hydrogen phosphate), the first sodium phosphate (basic sodium basic), the second sodium phosphate (disodium hydrogen phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate and ammonium hydrogen sulfate At least one selected from the group consisting of Texture etching liquid composition of crystalline silicon wafer.
  • the inorganic salt of the formula (1) is a texture etching solution composition of the crystalline silicon wafer containing 0.1 to 10% by weight relative to the total 100% by weight of the etching solution composition.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising an alkali compound.
  • composition of claim 4, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium.
  • the texture etching liquid composition of the crystalline silicon wafer further comprising a polysaccharide.
  • polysaccharide is at least one selected from the group consisting of glucan compounds, fructan compounds, mannan compounds, galactan compounds, and metal salts thereof.
  • the polysaccharide is cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl Cellulose, ethyl cellulose, methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, ⁇ 1 selected from the group consisting of -cyclodextrin, hydroxypropyl- ⁇ -cyclodextrin, methyl- ⁇ -cyclodextrin, dextran, dextransulfate sodium, sapon
  • the texture etching solution composition of claim 1 further comprising a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
  • the monomer is N-vinylpyrrolidone, N-acryloyl morpholine, N-vinyl succinimide, N-acryloxy succinimide, N-vinyl caprolactam, N-vinyl carba
  • the polymer has a weight average molecular weight of 1,000 to 1,000,000 crystalline silicon wafer texture etching liquid composition.
  • the cyclic compound has a boiling point of 100 °C or more texture etching liquid composition of the crystalline silicon wafer.
  • composition of claim 15, wherein the cyclic compound has a solubility parameter of Hansen of 6 to 15 in the texture etching solution composition of the crystalline silicon wafer.
  • the etching method according to the above 18, comprising spraying the etchant composition at a temperature of 50 to 100 °C for 30 seconds to 60 minutes.
  • the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound, the quality variation of the texture by the position of the surface of the crystalline silicon wafer Minimize, ie, improve the uniformity of the texture to maximize the absorption of sunlight.
  • FIG. 1 is an optical micrograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 1 is an optical micrograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is a SEM photograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Example 1.
  • FIG. 2 is a SEM photograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Example 1.
  • FIG. 3 is an optical micrograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Comparative Example 1.
  • the present invention by including the inorganic salt of the formula (1), by forming a fine pyramid structure on the surface of the crystalline silicon wafer by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound by position
  • the present invention relates to a texture etchant composition and texture etching method of a crystalline silicon wafer which minimizes the quality variation of the texture to increase light efficiency.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention is characterized in that it comprises an inorganic salt of the formula (1).
  • A is selected from the group consisting of NH 4 + , K + , Na + and Li + ;
  • B is SO 4 2- or PO 4 3- ;
  • y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ;
  • x and y are integers greater than zero.
  • the inorganic salt of Chemical Formula 1 according to the present invention can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent overetching by the alkali compound.
  • the kind of the inorganic salt of the formula (I) is not particularly limited, but for example, first potassium phosphate monobasic, dipotassium hydrogen phosphate, sodium phosphate monobasic, and second sodium phosphate phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate, ammonium hydrogen sulfate, etc. Can be mentioned. These can be used individually or in mixture of 2 or more types.
  • the inorganic salt of Formula 1 may be included in an amount of 0.1 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 0.1 to 3% by weight. If the content falls within the above range, the effect of controlling the etching rate difference with respect to the crystal direction of silicon is maximized.
  • the etching solution composition according to the present invention may further include an alkali compound.
  • the alkali compound may be used without limitation as long as it is an alkali compound commonly used in the art as a component for etching the surface of the crystalline silicon wafer.
  • alkali compound examples include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like, with potassium hydroxide and sodium hydroxide being preferred. These can be used individually or in mixture of 2 or more types.
  • the alkali compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, more preferably 1 to 5% by weight. When the content falls within the above range, the silicon wafer surface can be etched.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a polysaccharide.
  • Polysaccharide is a sugar in which two or more monosaccharides are glycosidic bonds to make a large molecule, and prevents overetching and accelerated etching by alkaline compounds to form a uniform fine pyramid and at the same time the hydrogen bubbles generated by etching It is a component that prevents bubble stick phenomenon by quickly falling from the silicon wafer surface.
  • polysaccharides examples include glucan compounds, fructan compounds, mannan compounds, galactan compounds, or metal salts thereof.
  • glucan compounds and metal salts thereof e.g., Alkali metal salts
  • These can be used individually or in mixture of 2 or more types.
  • glucan-based compound examples include cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl cellulose, ethyl cellulose, Methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, ⁇ -cyclodextrin, hydrate Oxypropyl- ⁇ -cyclodextrin, methyl- ⁇ -cyclodextrin, dextran, dextransulfate sodium, saponin, glycogen, zymoi
  • the polysaccharide may have an average molecular weight of 5,000 to 1,000,000, preferably 50,000 to 200,000.
  • the polysaccharide may be included in an amount of 10 -9 to 0.5% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, and preferably 10 -6 to 0.1% by weight. If the content falls within the above range, it is possible to effectively prevent over-etching and etching acceleration. If the content is more than 0.5% by weight, it is difficult to form the desired fine pyramid by drastically lowering the etching rate by the alkali compound.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further include a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
  • the polymer can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction, thereby preventing the overetching by the alkali compound, and the bubble stick phenomenon by rapidly reducing the amount of hydrogen bubbles generated by etching. This also suppresses the occurrence.
  • the polymer according to the present invention is formed by polymerizing a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen hetero atom, and the monomer is at least one each of oxygen and sulfur atoms alone or all in addition to nitrogen. It may be further included in the ring structure.
  • Specific examples of such monomers include N-vinylpyrrolidone, N-acryloyl morpholine, N-vinylsuccinimide, N-acryloxysuccinimide, N-vinylcaprolactam, N-vinylcarbazole, It may be one or more selected from the group consisting of N-acryloylpyrrolidine and the like.
  • the polymer according to the present invention preferably has a weight average molecular weight of 1,000 to 1,000,000 in that it can lower the reflectance by increasing the base angle of the pyramid and can form a uniform pyramid on the entire surface of the single crystal silicon wafer.
  • the polymer according to the present invention is preferable that the boiling point is higher than 100 °C in terms of reducing the amount of use, more preferably 150 to 400 °C.
  • the polymer according to the present invention may be included in an amount of 10 -12 to 1% by weight based on the total weight of the etching solution composition. When the content falls within the above range, the effect of controlling the difference in etching rate with respect to the crystal direction of silicon is maximized.
  • the polymer according to the invention may be mixed with a water soluble polar solvent.
  • the water-soluble polar solvent is not particularly limited as long as it is compatible with other components and water included in the texture etching solution composition of the crystalline silicon wafer, and both proton or aprotic polar solvents can be used.
  • ethylene glycol monomethyl ether As a proton polar solvent, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether Ether compounds such as diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether; Alcohol compounds such as propanol, butanol, isopropanol, tetrahydroperfuryl alcohol, ethylene glycol, propylene glycol and the like, and the like, and aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc.
  • Sulfoxide compounds such as dimethyl sulfoxide and sulfolane
  • Phosphate type compounds such as a triethyl phosphate and a tributyl phosphate, etc. are mentioned. These can be used individually or in mixture of 2 or more types.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a cyclic compound.
  • the cyclic compound may be a cyclic hydrocarbon having 4-10 carbon atoms; And a heterocyclic hydrocarbon having 4 to 10 carbon atoms, including one or more heteroatoms of N, O, or S, wherein the wettability of the surface of the crystalline silicon wafer is improved to prevent over-etching by an alkali compound.
  • a component that can prevent the bubble stick phenomenon from occurring by rapidly reducing the amount of hydrogen bubbles generated by etching By minimizing the quality variation of the texture by preventing it, it is also a component that can prevent the bubble stick phenomenon from occurring by rapidly reducing the amount of hydrogen bubbles generated by etching.
  • the boiling point can be used in a small amount compared to isopropyl alcohol is conventionally used as well as increase the number of treatment for the same amount of use.
  • a boiling point of a cyclic compound is high as 100 degreeC or more, More preferably, it is 150-400 degreeC.
  • the cyclic compound has a Hansen solubility parameter (HSP) of 6 to 15 in terms of compatibility with other components included in the etching liquid composition.
  • the cyclic compound is not particularly limited as long as it satisfies the boiling point and the solubility parameter of Hansen.
  • Examples thereof include piperazine, morpholine, pyridine, piperidine, piperidone, pyrrolidine, pyrrolidone, Imidazolidinone type, furan type, aniline type, toluidine type, amine type, lactone type, carbonate type, carbazole type compound, etc. are mentioned.
  • piperazine N-methylpiperazine, N-ethylpiperazine, N-vinylpiperazine, N-vinylmethylpiperazine, N-vinylethylpiperazine, N-vinyl-N'-methylpiperazine, N-acryloylpiperazine, N-acryloyl-N'-methylpiperazine, hydroxyethylpiperazine, N- (2-aminoethyl) piperazine, N, N'-dimethylpiperazine; Morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-vinylmorpholine, N-vinylmethylmorpholine, N-vinylethylmorpholine, N-acryloylmorpholine, N Cocomorpholine, N- (2-aminoethyl) morpholine, N- (2-cyanoethyl) morpholine, N- (2-hydroxyethyl) morpho
  • the cyclic compound is preferably included in an amount of 0.1 to 50% by weight, more preferably 1 to 10% by weight based on 100% by weight of the total amount of the texture etching solution composition of the crystalline silicon wafer. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
  • the cyclic compound may be mixed with a water soluble polar solvent.
  • the water-soluble polar solvent the same solvent as that of the polymer may be used.
  • the water soluble polar solvent may be included in an amount of 0.1 to 30% by weight based on 100% by weight of the cyclic compound.
  • the texture etchant composition of the crystalline silicon wafer of the present invention may comprise fatty acids or metal salts thereof; And at least one additive selected from the group consisting of a polyoxyethylene-based (POE) compound, a polyoxypropylene-based (POP) compound, and a surfactant which is a copolymer thereof.
  • POE polyoxyethylene-based
  • POP polyoxypropylene-based
  • surfactant which is a copolymer thereof.
  • Fatty acids and their metal salts are used in conjunction with polysaccharides to prevent overetching by alkali compounds, forming a uniform fine pyramid and at the same time quickly dropping the hydrogen bubbles generated by etching from the surface of the silicon wafer to prevent the occurrence of bubble sticking. It is an ingredient to say.
  • Fatty acids are carboxylic acids of hydrocarbon chains containing carboxyl groups, specifically acetic acid, propionic acid, butyric acid, valeric acid, enantiic acid, caprylic acid, pelagonic acid, capric acid, lauric acid, myristic acid, palmitic acid, Stearic acid, arachidic acid, behenic acid, lignoseric acid, serotic acid, eicosapentaenoic acid, docosahexaenoic acid, linoleic acid, ⁇ -linolenic acid, ⁇ -linolenic acid, dihomo- ⁇ -linolenic acid, arachidonic acid, Oleic acid, elideic acid, erucic acid, nerbonic acid, and the like.
  • the metal salt of a fatty acid may include an ester reactant of the above fatty acid with a metal salt such as NaOH or KOH. These can be used individually or in mixture of 2 or more types.
  • the fatty acid and its metal salt may be included in the amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 10 -6 to 1% by weight. When the content falls within the above range, over-etching can be effectively prevented.
  • Polyoxyethylene-based (POE) compounds, polyoxypropylene-based (POP) compounds, and copolymers thereof are surfactants having a hydroxy group, and the activity of hydroxy ions [OH ⁇ ] in the texture etching solution composition is adjusted to control the Si 100 direction. Not only does it reduce the difference in etching rate in the Si 111 direction, but also improves the wettability of the surface of the crystalline silicon wafer, thereby rapidly dropping the hydrogen bubbles generated by etching to prevent the occurrence of bubble stick phenomenon.
  • polyoxyethylene type (POE) surfactant polyoxyethylene glycol, polyoxyethylene glycol methyl ether, polyoxyethylene monoallyl ether, polyoxyethylene neopentyl ether, polyethylene glycol mono (tristyrylphenyl) ether, polyoxy Ethylene cetyl ether, polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene stearyl ether, polyoxyethylene tridecyl ether, polyoxyethylene decyl ether, polyoxyethylene octyl ether, polyoxyethylene bisphenol-A Polyoxyethylene having 6 to 30 carbon atoms in ether, polyoxyethylene glycerin ether, polyoxyethylene nonylphenyl ether, polyoxyethylene benzyl ether, polyoxyethylene phenyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene phenol ether, alkyl group Ethylene alkylcyclohexyl ether, polyoxyethylene (
  • polypropylene glycol is mentioned as polyoxypropylene system (POP) surfactant.
  • POP polyoxypropylene system
  • polyoxyethylene-polyoxypropylene copolymer polyoxyethylene-polyoxypropylene copolymer
  • polyoxyethylene-polyoxypropylene decanyl ether copolymer polyoxyethylene Polyoxypropylene undecanyl ether copolymer
  • polyoxyethylene-polyoxypropylene dodecanyl ether copolymer polyoxyethylene-polyoxypropylene tetradecanyl ether copolymer
  • polyoxyethylene-polyoxypropylene 2-ethylhexyl ether air Copolymer polyoxyethylene-polyoxypropylene lauryl ether copolymer
  • polyoxyethylene-polyoxypropylene stearyl ether copolymer polyoxyethylene-polyoxypropylene stearyl ether copolymer
  • the polyoxyethylene-based (POE) compound, the polyoxypropylene-based (POP) compound, and a copolymer thereof and a surfactant thereof may be included in an amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer. Is 10 -6 to 1% by weight, more preferably 0.00001 to 0.1% by weight. When the content falls within the above range, it is possible to reduce the variation of the texture quality by location when the surface of the crystalline silicon wafer surface is textured.
  • the texture etching solution composition of the crystalline silicon wafer according to the present invention after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water.
  • the components are adjusted to have the aforementioned content ranges.
  • the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is preferable that the specific resistance value is 18 kW / cm or more as deionized distilled water for a semiconductor process.
  • the texture etching solution composition of the crystalline silicon wafer of the present invention comprising the above components comprises, in particular, sulfate-based anionic surfactants to control the difference in etching rate with respect to the silicon crystal direction to overetch with alkali compounds.
  • sulfate-based anionic surfactants to control the difference in etching rate with respect to the silicon crystal direction to overetch with alkali compounds.
  • the texture etching liquid composition of the crystalline silicon wafer of the present invention can be applied to all conventional etching processes, such as dip, spray and single wafer etching processes.
  • the present invention provides a texture etching method of a crystalline silicon wafer using the texture etching liquid composition of the crystalline silicon wafer.
  • the texture etching method of the crystalline silicon wafer may include depositing the crystalline silicon wafer on the texture etching solution composition of the crystalline silicon wafer of the present invention, or spraying the texture etching solution composition of the crystalline silicon wafer of the present invention onto the crystalline silicon wafer. Step, or both.
  • the number of depositions and sprays is not particularly limited, and the order of both deposition and spraying is not limited.
  • Deposition, spraying or depositing and spraying may be performed for 30 seconds to 60 minutes at a temperature of 50 to 100 ° C.
  • the texture etching method of the crystalline silicon wafer of the present invention does not need to introduce a separate air-rating apparatus for supplying oxygen, so it is economical in terms of initial production and processing costs, and is uniform even in a simple process. It allows the formation of a structure.
  • the single crystal silicon wafers were immersed in the etching liquid composition for texture of the crystalline silicon wafers of Examples 1 to 10 and Comparative Examples 1 to 8, respectively.
  • the texture conditions at this time were the temperature of 80 degreeC, and 20 minutes.
  • Texture reflectance measured the average reflectance when irradiated with light having a wavelength range of 400 to 800nm using ultraviolet rays, the results are shown in Table 2.
  • the etching liquid composition for the texture of the silicon wafers of Examples 1 to 10 has a very good degree of pyramid formation on the entire surface of the single crystal silicon wafer. Due to the texture uniformity and pyramid shape, it can be seen that the silicon wafer texture formed by the embodiments has a low reflectance value of 10-11%.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

The present invention relates to a texture-etching solution composition for crystalline silicon wafers, and a texture-etching method and, more specifically, to: a texture-etching solution composition for crystalline silicon wafers which contains inorganic salt of chemical formula 1[AxHyB], and which is capable of preventing over-etching caused by an alkali compound by controlling differences in etching speed with respect to a direction of the silicon crystalline when forming a fine pyramid structure on the surface of the crystalline silicon wafer, such that quality deviations of the texture by position are minimized to increase light efficiency; and a texture-etching method.

Description

결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법Texture Etching Compositions and Texture Etching Methods of Crystalline Silicon Wafers
본 발명은 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐 품질 편차를 최소화하여 광효율을 높일 수 있는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.The present invention relates to a texture etching solution composition and a texture etching method of the crystalline silicon wafer that can improve the light efficiency by minimizing the texture quality variation of each position on the surface of the crystalline silicon wafer.
최근 들어 급속하게 보급되고 있는 태양전지는 차세대 에너지원으로서 클린 에너지인 태양 에너지를 직접 전기로 변환하는 전자 소자로서, 실리콘에 붕소를 첨가한 P형 실리콘 반도체를 기본으로 하여 그 표면에 인을 확산시켜 N형 실리콘 반도체층을 형성시킨 PN 접합 반도체 기판으로 구성되어 있다.Solar cells, which are rapidly spreading in recent years, are electronic devices that directly convert solar energy, which is clean energy, into electricity as a next-generation energy source, and diffuse phosphorus on its surface based on P-type silicon semiconductors containing boron in silicon. It consists of the PN junction semiconductor substrate in which the N type silicon semiconductor layer was formed.
PN 접합에 의해 전계가 형성된 기판에 태양광과 같은 빛을 조사할 경우 반도체 내의 전자(-)와 정공(+)이 여기되어 반도체 내부를 자유로이 이동하는 상태가 되며, 이러한 PN 접합에 의해 생긴 전계에 들어오게 되면 전자(-)는 N형 반도체에, 정공(+)은 P형 반도체에 이르게 된다. P형 반도체와 N형 반도체 표면에 전극을 형성하여 전자를 외부회로로 흐르게 하면 전류가 발생하게 되는데, 이와 같은 원리로 태양 에너지가 전기 에너지로 변환된다. 따라서 태양 에너지의 변환 효율을 높이기 위해서 PN 접합 반도체 기판의 단위 면적당 전기적 출력을 극대화시켜야 하며, 이를 위해서 반사율은 낮게 하고 광 흡수량은 최대화시켜야 한다. 이러한 점을 고려하여 PN 접합 반도체 기판을 구성하는 태양전지용 실리콘 웨이퍼의 표면을 미세 피라미드 구조로 형성시키고 반사 방지막을 처리하고 있다. 미세 피라미드 구조로 텍스쳐링된 실리콘 웨이퍼의 표면은 넓은 파장대를 갖는 입사광의 반사율을 낮춰 기 흡수된 광의 강도를 증가시킴으로써 태양전지의 성능, 즉 효율을 높일 수 있게 된다.When light such as sunlight is irradiated onto a substrate on which an electric field is formed by a PN junction, electrons (-) and holes (+) in the semiconductor are excited to move freely inside the semiconductor, and the electric field generated by the PN junction Upon entering, electrons (-) reach the N-type semiconductor and holes (+) reach the P-type semiconductor. When electrodes are formed on the surfaces of the P-type semiconductor and the N-type semiconductor to flow electrons to an external circuit, current is generated. Solar energy is converted into electrical energy based on the same principle. Therefore, in order to increase the conversion efficiency of solar energy, the electrical output per unit area of the PN junction semiconductor substrate should be maximized. For this purpose, the reflectance should be low and the light absorption amount should be maximized. In view of this point, the surface of the solar cell silicon wafer constituting the PN junction semiconductor substrate is formed into a fine pyramid structure and the antireflection film is treated. The surface of the silicon wafer textured with the fine pyramid structure increases the intensity of the light absorbed by lowering the reflectance of incident light having a wide wavelength band, thereby improving the performance of the solar cell.
실리콘 웨이퍼 표면을 미세 피라미드 구조로 텍스쳐하는 방법으로, 미국특허 제4,137,123호에는 0-75부피%의 에틸렌글리콜, 0.05-50중량%의 수산화칼륨 및 잔량의 물을 포함하는 이방성 에칭액에 0.5-10중량%의 실리콘이 용해된 실리콘 텍스쳐 에칭액이 개시되어 있다. 그러나, 이 에칭액은 피라미드 형성 불량을 일으켜 광 반사율을 증가시키고 효율의 저하를 초래할 수 있다.As a method of texturing a silicon wafer surface with a fine pyramid structure, U.S. Patent No. 4,137,123 discloses 0.5-10 weight in an anisotropic etching solution containing 0-75% by volume of ethylene glycol, 0.05-50% by weight of potassium hydroxide and the remaining amount of water. A silicon texture etching solution in which% silicon is dissolved is disclosed. However, this etchant can cause pyramid formation defects to increase the light reflectance and cause a decrease in efficiency.
또한, 유럽특허 제0477424호에는 에틸렌글리콜, 수산화칼륨 및 잔량의 물에 실리콘을 용해시킨 텍스쳐 에칭액에 산소를 공급시키는, 즉 에어레이팅 공정을 수행하는 텍스쳐 에칭 방법이 개시되어 있다. 그러나, 이 에칭 방법은 피라미드 형성 불량을 일으켜 광 반사율 증가와 효율의 저하를 초래할 뿐만 아니라 별도의 에어레이팅 장비의 설치를 필요로 한다는 단점이 있다.In addition, European Patent No. 0477424 discloses a texture etching method of supplying oxygen to a texture etching solution in which silicon is dissolved in ethylene glycol, potassium hydroxide and residual water, that is, performing an air rating process. However, this etching method has a disadvantage in that it causes poor pyramid formation, which leads to an increase in light reflectivity and a decrease in efficiency, and requires the installation of a separate air rating equipment.
또한, 한국등록특허 제0180621호에는 수산화칼륨 용액 0.5-5%, 이소프로필알코올 3-20부피%, 탈이온수 75-96.5부피%의 비율로 혼합된 텍스쳐 에칭 용액이 개시되어 있고, 미국특허 제6,451,218호에는 알칼리 화합물, 이소프로필알코올, 수용성 알카리성 에틸렌글리콜 및 물을 포함하는 텍스쳐 에칭 용액이 개시되어 있다. 그러나, 이들 에칭 용액은 비점이 낮은 이소프로필알코올을 포함하고 있어 텍스쳐 공정 중 이를 추가 투입해야 하므로 생산성 및 비용 면에서 경제적이지 못하며, 추가 투입된 이소프로필알코올로 인해 에칭액의 온도 구배가 발생하여 실리콘 웨이퍼 표면의 위치별 텍스쳐 품질 편차가 커져 균일성이 떨어질 수 있다.In addition, Korean Patent No. 0180621 discloses a texture etching solution mixed at a ratio of 0.5-5% potassium hydroxide solution, 3-20% by volume of isopropyl alcohol, and 75-96.5% by volume of deionized water, US Patent No. 6,451,218 No. discloses a texture etching solution comprising an alkali compound, isopropyl alcohol, a water soluble alkaline ethylene glycol and water. However, since these etching solutions contain isopropyl alcohol having a low boiling point and need to be added during the texturing process, it is not economical in terms of productivity and cost, and the addition of isopropyl alcohol causes a temperature gradient of the etching solution, resulting in the surface of the silicon wafer. The texture quality variation of each position may increase, resulting in poor uniformity.
[선행기술문헌][Preceding technical literature]
[특허문헌][Patent Documents]
(특허문헌 1) 미국 특허공보 4,137,123(Patent Document 1) US Patent Publication 4,137,123
(특허문헌 2) 유럽 특허공보 0477424(Patent Document 2) European Patent Publication 0477424
(특허문헌 3) 한국 등록특허공보 10-0180621(Patent Document 3) Korean Registered Patent Publication 10-0180621
본 발명은 결정성 실리콘 웨이퍼의 표면에 미세 피라미드 구조를 형성함에 있어서, 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 위치별 텍스쳐의 품질 편차를 최소화하여 광 효율을 증가시키는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 제공하는 것을 목적으로 한다.In the present invention, in forming a fine pyramid structure on the surface of a crystalline silicon wafer, by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound, light quality is minimized by minimizing the quality variation of the texture by location It is an object of the present invention to provide a texture etching solution composition of a crystalline silicon wafer which increases.
또한, 본 발명은 에칭 공정 중 별도의 에칭액 성분의 투입과 에어레이팅 공정의 적용이 필요 없는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 제공하는 것을 목적으로 한다.In addition, an object of the present invention is to provide a texture etching liquid composition of a crystalline silicon wafer that does not require the addition of a separate etching liquid component and the application of an air rating process during the etching process.
또한, 본 발명은 상기 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 이용한 텍스쳐 에칭방법을 제공하는 것을 다른 목적으로 한다.Another object of the present invention is to provide a texture etching method using the texture etching liquid composition of the crystalline silicon wafer.
1. 하기 화학식 1의 무기염을 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물:1. A texture etching liquid composition of a crystalline silicon wafer comprising an inorganic salt of the general formula (1):
[화학식 1][Formula 1]
AxHyBAxHyB
식 중에서, A는 NH4 +, K+, Na+ 및 Li+로 이루어진 군에서 선택되고; B는 SO4 2- 또는 PO4 3-이고; y는 B가 SO4 2-인 경우 2-x이며, B가 PO4 3-인 경우 3-x이고; x 및 y는 0보다 큰 정수이다.Wherein A is selected from the group consisting of NH 4 + , K + , Na + and Li + ; B is SO 4 2- or PO 4 3- ; y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ; x and y are integers greater than zero.
2. 위 1에 있어서, 상기 화학식 1의 무기염은 제1 인산칼륨(potassium phosphate monobasic), 제2 인산칼륨(dipotassium hydrogen phosphate), 제1 인산나트륨(sodium phosphate monobasic), 제2 인산나트륨(disodium hydrogen phosphate), 제1 인산암모늄(ammonium phosphate monobasic), 제2 인산암모늄(ammonium phosphate dibasic), 황산수소칼륨(potassium hydrogen sulfate), 황산수소나트륨(sodium hydrogen sulfate) 및 황산수소암모늄(ammonium hydrogen sulfate)으로 이루어진 군에서 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.2. In the above 1, the inorganic salt of Formula 1 is the first potassium phosphate (potassium phosphate monobasic), the second potassium phosphate (dipotassium hydrogen phosphate), the first sodium phosphate (basic sodium basic), the second sodium phosphate (disodium hydrogen phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate and ammonium hydrogen sulfate At least one selected from the group consisting of Texture etching liquid composition of crystalline silicon wafer.
3. 위 1에 있어서, 상기 화학식 1의 무기염은 에칭액 조성물 총 100중량%에 대하여 0.1 내지 10중량%로 포함되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.3. In the above 1, wherein the inorganic salt of the formula (1) is a texture etching solution composition of the crystalline silicon wafer containing 0.1 to 10% by weight relative to the total 100% by weight of the etching solution composition.
4. 위 1에 있어서, 알칼리 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.4. according to the above 1, the texture etching liquid composition of the crystalline silicon wafer further comprising an alkali compound.
5. 위 4에 있어서, 상기 알칼리 화합물은 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄 및 테트라히드록시에틸암모늄으로 이루어진 군으로부터 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.5. The composition of claim 4, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium and tetrahydroxyethylammonium.
6. 위 1에 있어서, 다당류를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.6. In the above 1, the texture etching liquid composition of the crystalline silicon wafer further comprising a polysaccharide.
7. 위 6에 있어서, 상기 다당류는 글루칸계 화합물, 프룩탄계 화합물, 만난계 화합물, 갈락탄계 화합물 및 이들의 금속염으로 이루어진 군으로부터 선택된 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.7. The texture etching solution of claim 6, wherein the polysaccharide is at least one selected from the group consisting of glucan compounds, fructan compounds, mannan compounds, galactan compounds, and metal salts thereof.
8. 위 6에 있어서, 상기 다당류는 셀룰로오스, 디메틸아미노에틸셀룰로오스, 디에틸아미노에틸셀룰로오스, 에틸히드록시에틸셀룰로오스, 메틸히드록시에틸셀룰로오스, 4-아미노벤질셀룰로오스, 트리에틸아미노에틸셀룰로오스, 시아노에틸셀룰로오스, 에틸셀룰로오스, 메틸셀룰로오스, 카르복시메틸셀룰로오스, 카르복시에틸셀룰로오스, 히드록시에틸셀룰로오스, 히드록시프로필셀룰로오스, 알긴산, 아밀로오스, 아밀로펙틴, 펙틴, 스타치, 덱스트린, α-시클로덱스트린, β-시클로덱스트린, γ-시클로덱스트린, 히드록시프로필-β-시클로덱스트린, 메틸-β-시클로덱스트린, 덱스트란, 덱스트란설페이트나트륨, 사포닌, 글리코겐, 자이모산, 렌티난, 시조피난 및 이들의 금속염으로 이루어진 군으로부터 선택된 1종 이상의 글루칸계 화합물인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.8. In the above 6, the polysaccharide is cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl Cellulose, ethyl cellulose, methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ 1 selected from the group consisting of -cyclodextrin, hydroxypropyl-β-cyclodextrin, methyl-β-cyclodextrin, dextran, dextransulfate sodium, saponin, glycogen, zymoic acid, lentinan, sizopinean and metal salts thereof Crystalline Silyl Which Is More Than One Glucan Compound Texture etching liquid composition of the wafer.
9. 위 1에 있어서, 질소 원자를 적어도 하나 포함하는 탄소수 4 내지 10인 고리 화합물로 치환된 단량체가 중합된 고분자를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.9. The texture etching solution composition of claim 1, further comprising a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
10. 위 9에 있어서, 상기 단량체는 고리 구조에 산소 및 황 원자 중 적어도 하나를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.10. The texture etching solution composition of claim 9, wherein the monomer further comprises at least one of oxygen and sulfur atoms in a ring structure.
11. 위 9에 있어서, 상기 단량체는 N-비닐피롤리돈, N-아크릴로일 모르폴린, N-비닐석신이미드, N-아크릴옥시석신이미드, N-비닐카프로락탐, N-비닐카바졸 및 N-아크릴로일피롤리딘으로 이루어진 군에서 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.11. In the above 9, the monomer is N-vinylpyrrolidone, N-acryloyl morpholine, N-vinyl succinimide, N-acryloxy succinimide, N-vinyl caprolactam, N-vinyl carba A texture etching solution composition of at least one crystalline silicon wafer selected from the group consisting of sol and N-acryloylpyrrolidine.
12. 위 9에 있어서, 상기 고분자는 중량평균 분자량이 1,000 내지 1,000,000인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.12. In the above 9, wherein the polymer has a weight average molecular weight of 1,000 to 1,000,000 crystalline silicon wafer texture etching liquid composition.
13. 위 9에 있어서, 상기 고분자는 비점이 100℃ 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.13. In the above 9, wherein the polymer has a boiling point of 100 ℃ or more texture etching liquid composition of the crystalline silicon wafer.
14. 위 9에 있어서, 상기 고분자는 에칭액 조성물 총 중량 대비 10-12 내지 1 중량%로 포함되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.14. In the above 9, wherein the polymer is 10 to 12 to 1% by weight based on the total weight of the etching solution composition texture etching liquid composition of the crystalline silicon wafer.
15. 위 1에 있어서, 고리형 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.15. The texture etchant of claim 1, wherein the crystalline silicon wafer further comprises a cyclic compound.
16. 위 15에 있어서, 고리형 화합물은 비점이 100℃ 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.16. In the above 15, the cyclic compound has a boiling point of 100 ℃ or more texture etching liquid composition of the crystalline silicon wafer.
17. 위 15에 있어서, 고리형 화합물은 한센의 용해도 파라미터가 6 내지 15인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.17. The composition of claim 15, wherein the cyclic compound has a solubility parameter of Hansen of 6 to 15 in the texture etching solution composition of the crystalline silicon wafer.
18. 위 1 내지 17 중 어느 한 항의 에칭액 조성물에 의한 결정성 실리콘 웨이퍼의 텍스쳐 에칭 방법.18. The texture etching method of the crystalline silicon wafer by the etching liquid composition of any one of 1 to 17 above.
19. 위 18에 있어서, 상기 에칭액 조성물을 50 내지 100℃의 온도에서 30초 내지 60분 동안 분무시키는 것을 포함하는 에칭 방법.19. The etching method according to the above 18, comprising spraying the etchant composition at a temperature of 50 to 100 ℃ for 30 seconds to 60 minutes.
20. 위 18에 있어서, 상기 에칭액 조성물에 상기 웨이퍼를 50 내지 100℃의 온도에서 30초 내지 60분 동안 침적시키는 에칭 방법.20. The etching method of 18 above, immersing the wafer in the etching solution composition for 30 seconds to 60 minutes at a temperature of 50 to 100 ℃.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 따르면 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐의 품질 편차를 최소화, 즉 텍스쳐의 균일성을 향상시켜 태양광의 흡수량을 극대화시킨다.According to the texture etching liquid composition and the texture etching method of the crystalline silicon wafer of the present invention, by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound, the quality variation of the texture by the position of the surface of the crystalline silicon wafer Minimize, ie, improve the uniformity of the texture to maximize the absorption of sunlight.
텍스쳐 공정 중 별도의 에칭액 성분을 투입할 필요가 없고 에어레이팅 장비도 도입할 필요가 없어 품질과 생산성을 향상시킬 수 있고 공정 비용 면에서도 경제적이다.There is no need to add a separate etchant component during the texturing process, and there is no need to introduce an air rating equipment, which can improve quality and productivity, and is economical in terms of process cost.
도 1은 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 이용하여 에칭된 단결정 실리콘 웨이퍼의 텍스쳐를 나타낸 광학현미경 사진이다. FIG. 1 is an optical micrograph showing the texture of a single crystal silicon wafer etched using the etching liquid composition for the texture of the crystalline silicon wafer of Example 1. FIG.
도 2는 실시예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물로 텍스쳐된 단결정 실리콘 웨이퍼의 표면을 나타낸 SEM 사진이다.FIG. 2 is a SEM photograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Example 1. FIG.
도 3은 비교예 1의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물로 텍스쳐된 단결정 실리콘 웨이퍼의 표면을 나타낸 광학현미경 사진이다.3 is an optical micrograph showing the surface of a single crystal silicon wafer textured with the etching liquid composition for texture of the crystalline silicon wafer of Comparative Example 1.
본 발명은, 화학식 1의 무기염을 포함함으로써, 결정성 실리콘 웨이퍼의 표면에 미세 피라미드 구조를 형성함에 있어서 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 위치별 텍스쳐의 품질 편차를 최소화하여 광 효율을 증가시키는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법에 관한 것이다.The present invention, by including the inorganic salt of the formula (1), by forming a fine pyramid structure on the surface of the crystalline silicon wafer by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent over-etching by the alkali compound by position The present invention relates to a texture etchant composition and texture etching method of a crystalline silicon wafer which minimizes the quality variation of the texture to increase light efficiency.
이하, 본 발명을 구체적으로 설명하도록 한다.Hereinafter, the present invention will be described in detail.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 하기 화학식 1의 무기염을 포함하는 것을 특징으로 한다.The texture etching solution composition of the crystalline silicon wafer of the present invention is characterized in that it comprises an inorganic salt of the formula (1).
[화학식 1][Formula 1]
AxHyBAxHyB
식 중에서, A는 NH4 +, K+, Na+ 및 Li+로 이루어진 군에서 선택되고; B는 SO4 2- 또는 PO4 3-이고; y는 B가 SO4 2-인 경우 2-x이며, B가 PO4 3-인 경우 3-x이고; x 및 y는 0보다 큰 정수이다.Wherein A is selected from the group consisting of NH 4 + , K + , Na + and Li + ; B is SO 4 2- or PO 4 3- ; y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ; x and y are integers greater than zero.
본 발명에 따른 상기 화학식 1의 무기염은 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 텍스쳐의 품질 편차를 최소화할 수 있다.The inorganic salt of Chemical Formula 1 according to the present invention can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction to prevent overetching by the alkali compound.
화학식 1의 무기염의 종류는 특별히 한정되지 않으나, 예컨대 제1 인산칼륨(potassium phosphate monobasic), 제2 인산칼륨(dipotassium hydrogen phosphate), 제1 인산나트륨(sodium phosphate monobasic), 제2 인산나트륨(disodium hydrogen phosphate), 제1 인산암모늄(ammonium phosphate monobasic), 제2 인산암모늄(ammonium phosphate dibasic), 황산수소칼륨(potassium hydrogen sulfate), 황산수소나트륨(sodium hydrogen sulfate), 황산수소암모늄(ammonium hydrogen sulfate) 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.The kind of the inorganic salt of the formula (I) is not particularly limited, but for example, first potassium phosphate monobasic, dipotassium hydrogen phosphate, sodium phosphate monobasic, and second sodium phosphate phosphate, ammonium phosphate monobasic, ammonium phosphate dibasic, ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate, ammonium hydrogen sulfate, etc. Can be mentioned. These can be used individually or in mixture of 2 or more types.
화학식 1의 무기염은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 0.1 내지 10중량%로 포함될 수 있으며, 바람직하게는 0.1 내지 3중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 실리콘의 결정방향에 대한 에칭 속도 차이를 제어하는 효과가 극대화 된다.The inorganic salt of Formula 1 may be included in an amount of 0.1 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 0.1 to 3% by weight. If the content falls within the above range, the effect of controlling the etching rate difference with respect to the crystal direction of silicon is maximized.
본 발명에 따른 에칭액 조성물은 알칼리 화합물을 더 포함할 수 있다.The etching solution composition according to the present invention may further include an alkali compound.
알칼리 화합물은 결정성 실리콘 웨이퍼의 표면을 에칭하는 성분으로서 당분야에서 통상적으로 사용하는 알칼리 화합물이라면 제한없이 사용될 수 있다. 사용가능한 알칼리 화합물로는 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄, 테트라히드록시에틸암모늄 등을 들 수 있으며, 이 중에서 수산화칼륨, 수산화나트륨이 바람직하다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.The alkali compound may be used without limitation as long as it is an alkali compound commonly used in the art as a component for etching the surface of the crystalline silicon wafer. Examples of the alkali compound that can be used include potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, tetrahydroxyethylammonium, and the like, with potassium hydroxide and sodium hydroxide being preferred. These can be used individually or in mixture of 2 or more types.
알칼리 화합물은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 0.1 내지 20중량%로 포함되는 것이 바람직하고, 보다 바람직하게는 1 내지 5중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 실리콘 웨이퍼 표면을 에칭할 수 있게 된다.The alkali compound is preferably included in an amount of 0.1 to 20% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, more preferably 1 to 5% by weight. When the content falls within the above range, the silicon wafer surface can be etched.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 다당류를 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a polysaccharide.
다당류(polysaccharide)는 단당류 2개 이상이 글리코시드 결합하여 큰 분자를 만들고 있는 당류로서, 알칼리 화합물에 의한 과에칭과 에칭 가속화를 방지함으로써 균일한 미세 피라미드를 형성하는 동시에 에칭에 의해 생성된 수소 버블을 실리콘 웨이퍼 표면으로부터 빨리 떨어뜨려 버블 스틱 현상을 방지하는 성분이다.Polysaccharide (polysaccharide) is a sugar in which two or more monosaccharides are glycosidic bonds to make a large molecule, and prevents overetching and accelerated etching by alkaline compounds to form a uniform fine pyramid and at the same time the hydrogen bubbles generated by etching It is a component that prevents bubble stick phenomenon by quickly falling from the silicon wafer surface.
다당류로는 글루칸계(glucan) 화합물, 프룩탄계(fructan) 화합물, 만난계(mannan) 화합물, 갈락탄계(galactan) 화합물 또는 이들의 금속염 등을 들 수 있으며, 이 중에서 글루칸계 화합물과 이의 금속염(예컨대, 알칼리 금속염)이 바람직하다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.Examples of the polysaccharides include glucan compounds, fructan compounds, mannan compounds, galactan compounds, or metal salts thereof. Among them, glucan compounds and metal salts thereof (e.g., Alkali metal salts) are preferred. These can be used individually or in mixture of 2 or more types.
글루칸계 화합물로는 셀룰로오스, 디메틸아미노에틸셀룰로오스, 디에틸아미노에틸셀룰로오스, 에틸히드록시에틸셀룰로오스, 메틸히드록시에틸셀룰로오스, 4-아미노벤질셀룰로오스, 트리에틸아미노에틸셀룰로오스, 시아노에틸셀룰로오스, 에틸셀룰로오스, 메틸셀룰로오스, 카르복시메틸셀룰로오스, 카르복시에틸셀룰로오스, 히드록시에틸셀룰로오스, 히드록시프로필셀룰로오스, 알긴산, 아밀로오스, 아밀로펙틴, 펙틴, 스타치, 덱스트린, α-시클로덱스트린, β-시클로덱스트린, γ-시클로덱스트린, 히드록시프로필-β-시클로덱스트린, 메틸-β-시클로덱스트린, 덱스트란, 덱스트란설페이트나트륨, 사포닌, 글리코겐, 자이모산, 렌티난, 시조피난 또는 이들의 금속염 등을 들 수 있다.Examples of the glucan-based compound include cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl cellulose, ethyl cellulose, Methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclodextrin, hydrate Oxypropyl-β-cyclodextrin, methyl-β-cyclodextrin, dextran, dextransulfate sodium, saponin, glycogen, zymoic acid, lentinan, sizopinean or metal salts thereof.
다당류는 평균 분자량이 5,000 내지 1,000,000인 것일 수 있으며, 바람직하게 50,000 내지 200,000인 것이 좋다.The polysaccharide may have an average molecular weight of 5,000 to 1,000,000, preferably 50,000 to 200,000.
다당류는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 10-9 내지 0.5중량%로 포함될 수 있으며, 바람직하게는 10-6 내지 0.1중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 과에칭과 에칭 가속화를 효과적으로 방지할 수 있다. 함량이 0.5중량% 초과인 경우 알칼리 화합물에 의한 에칭 속도를 급격하게 저하시켜 원하는 미세 피라미드를 형성하기 어렵다.The polysaccharide may be included in an amount of 10 -9 to 0.5% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, and preferably 10 -6 to 0.1% by weight. If the content falls within the above range, it is possible to effectively prevent over-etching and etching acceleration. If the content is more than 0.5% by weight, it is difficult to form the desired fine pyramid by drastically lowering the etching rate by the alkali compound.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 질소 원자를 적어도 하나 포함하는 탄소수 4 내지 10인 고리 화합물로 치환된 단량체가 중합된 고분자를 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may further include a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen atom.
상기 고분자는 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어함으로써 알칼리 화합물에 의한 과에칭을 방지함으로써 텍스쳐의 품질 편차를 최소화할 수 있으며, 에칭에 의해 생성된 수소 버블의 양을 빠르게 감소시킴으로써 버블 스틱 현상이 발생하는 것도 억제한다.The polymer can minimize the quality variation of the texture by controlling the difference in the etching rate with respect to the silicon crystal direction, thereby preventing the overetching by the alkali compound, and the bubble stick phenomenon by rapidly reducing the amount of hydrogen bubbles generated by etching. This also suppresses the occurrence.
본 발명에 따른 고분자는 질소 헤테로 원자를 적어도 하나 포함하는 탄소수 4 내지 10인 고리 화합물이 치환된 단량체가 중합되어 형성되며, 상기 단량체는 질소 외에 산소, 황 원자를 단독으로 또는 모두를 각각 적어도 하나 이상 그 고리 구조에 더 포함할 수 있다. 이러한 단량체로서 구체적인 예를 들면, N-비닐피롤리돈, N-아크릴로일 모르폴린, N-비닐석신이미드, N-아크릴옥시석신이미드, N-비닐카프로락탐, N-비닐카바졸, N-아크릴로일피롤리딘 등으로 이루어진 군에서 선택되는 1종 이상일 수 있다.The polymer according to the present invention is formed by polymerizing a monomer substituted with a cyclic compound having 4 to 10 carbon atoms containing at least one nitrogen hetero atom, and the monomer is at least one each of oxygen and sulfur atoms alone or all in addition to nitrogen. It may be further included in the ring structure. Specific examples of such monomers include N-vinylpyrrolidone, N-acryloyl morpholine, N-vinylsuccinimide, N-acryloxysuccinimide, N-vinylcaprolactam, N-vinylcarbazole, It may be one or more selected from the group consisting of N-acryloylpyrrolidine and the like.
본 발명에 따른 고분자는 중량평균 분자량이 1,000 내지 1,000,000인 것이 피라미드의 밑변각을 높힘으로써 반사율을 낮출 수 있을 뿐만 아니라 단결정 실리콘 웨이퍼 전면에 균일한 피라미드를 형성시킬 수 있다는 점에서 바람직하다.The polymer according to the present invention preferably has a weight average molecular weight of 1,000 to 1,000,000 in that it can lower the reflectance by increasing the base angle of the pyramid and can form a uniform pyramid on the entire surface of the single crystal silicon wafer.
또한, 본 발명에 따른 고분자는 비점이 100℃ 이상으로 높은 것이 사용량을 줄일 수 있는 측면에서 바람직하고, 보다 바람직하게는 150 내지 400℃인 것이 좋다.In addition, the polymer according to the present invention is preferable that the boiling point is higher than 100 ℃ in terms of reducing the amount of use, more preferably 150 to 400 ℃.
본 발명에 따른 고분자는 그 함량이 에칭액 조성물 총 중량 대비 10-12 내지 1 중량%로 포함될 수 있다. 함량이 상기 범위에 해당되는 경우 실리콘의 결정방향에 대한 에칭 속도 차이를 제어하는 효과가 극대화된다.The polymer according to the present invention may be included in an amount of 10 -12 to 1% by weight based on the total weight of the etching solution composition. When the content falls within the above range, the effect of controlling the difference in etching rate with respect to the crystal direction of silicon is maximized.
본 발명에 따른 고분자는 수용성 극성 용매와 혼합된 것일 수도 있다.The polymer according to the invention may be mixed with a water soluble polar solvent.
수용성 극성 용매는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물에 포함되는 다른 성분들 및 물과 상용성이 있는 것이라면 그 종류가 특별히 한정되지 않으며, 양자성 또는 비양자성 극성 용매를 모두 사용할 수 있다.The water-soluble polar solvent is not particularly limited as long as it is compatible with other components and water included in the texture etching solution composition of the crystalline silicon wafer, and both proton or aprotic polar solvents can be used.
양자성 극성 용매로는 에틸렌글리콜모노메틸에테르, 디에틸렌글리콜모노메틸에테르, 트리에틸렌글리콜모노메틸에테르, 폴리에틸렌글리콜모노메틸에테르, 에틸렌글리콜모노에틸에테르, 디에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노부틸에테르, 디에틸렌글리콜모노부틸에테르, 트리에틸렌글리콜모노부틸에테르, 프로필렌글리콜모노메틸에테르, 디프로필렌글리콜모노메틸에테르 등의 에테르계 화합물; 프로판올, 부탄올, 이소프로판올, 테트라하이드로퍼푸릴알코올, 에틸렌글리콜, 프로필렌글리콜 등의 알코올계 화합물 등을 들 수 있으며, 비양자성 극성 용매로는 N-메틸포름아미드, N,N-디메틸포름아미드 등의 아미드계 화합물; 디메틸술폭사이드, 술폴란 등의 술폭사이드계 화합물; 트리에틸포스페이트, 트리부틸포스페이트 등의 포스페이트계 화합물 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.As a proton polar solvent, ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, polyethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether Ether compounds such as diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether; Alcohol compounds such as propanol, butanol, isopropanol, tetrahydroperfuryl alcohol, ethylene glycol, propylene glycol and the like, and the like, and aprotic polar solvents such as N-methylformamide, N, N-dimethylformamide, etc. System compounds; Sulfoxide compounds such as dimethyl sulfoxide and sulfolane; Phosphate type compounds, such as a triethyl phosphate and a tributyl phosphate, etc. are mentioned. These can be used individually or in mixture of 2 or more types.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 고리형 화합물을 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may further comprise a cyclic compound.
고리형 화합물은 탄소수 4-10의 고리형 탄화수소; 및 N, O 또는 S의 헤테로원자를 1개 이상 포함하는, 탄소수 4-10의 헤테로고리형 탄화수소를 포함하는 화합물을 의미하며, 결정성 실리콘 웨이퍼 표면의 젖음성을 개선시켜 알칼리 화합물에 의한 과에칭을 방지함으로써 텍스쳐의 품질 편차를 최소화시키는 동시에 에칭에 의해 생성된 수소 버블의 양을 빠르게 감소시킴으로써 버블 스틱 현상이 발생하는 것도 방지할 수 있는 성분이다. 또한, 비점이 높아 종래 사용되고 있는 이소프로필알코올에 비해 적은 함량으로 사용이 가능할 뿐만 아니라 동일 사용량에 대한 처리 매수도 증가시킬 수 있다.The cyclic compound may be a cyclic hydrocarbon having 4-10 carbon atoms; And a heterocyclic hydrocarbon having 4 to 10 carbon atoms, including one or more heteroatoms of N, O, or S, wherein the wettability of the surface of the crystalline silicon wafer is improved to prevent over-etching by an alkali compound. By minimizing the quality variation of the texture by preventing it, it is also a component that can prevent the bubble stick phenomenon from occurring by rapidly reducing the amount of hydrogen bubbles generated by etching. In addition, the boiling point can be used in a small amount compared to isopropyl alcohol is conventionally used as well as increase the number of treatment for the same amount of use.
고리형 화합물은 비점이 100℃ 이상으로 높은 것이 바람직하고, 보다 바람직하게는 150 내지 400℃인 것이 좋다. 동시에, 고리형 화합물은 한센의 용해도 파라미터(Hansen solubility parameter(HSP), δp)가 6 내지 15인 것이 에칭액 조성물에 포함되는 다른 성분들과의 상용성 면에서 바람직하다.It is preferable that a boiling point of a cyclic compound is high as 100 degreeC or more, More preferably, it is 150-400 degreeC. At the same time, it is preferable that the cyclic compound has a Hansen solubility parameter (HSP) of 6 to 15 in terms of compatibility with other components included in the etching liquid composition.
고리형 화합물은 비점과 한센의 용해도 파라미터를 만족시키는 것이라면 그 종류가 특별히 한정되지 않으며, 예컨대 피페라진계, 모르폴린계, 피리딘계, 피페리딘계, 피페리돈계, 피롤리딘계, 피롤리돈계, 이미다졸리디논계, 퓨란계, 아닐린계, 톨루이딘계, 아민계, 락톤계, 카보네이트계, 카바졸계 화합물 등을 들 수 있다. 구체적인 예로는, 피페라진, N-메틸피페라진, N-에틸피페라진, N-비닐피페라진, N-비닐메틸피페라진, N-비닐에틸피페라진, N-비닐-N'-메틸피페라진, N-아크릴로일피페라진, N-아크릴로일-N'-메틸피페라진, 히드록시에틸피페라진, N-(2-아미노에틸)피페라진, N,N'-디메틸피페라진; 모르폴린, N-메틸모르폴린, N-에틸모르폴린, N-페닐모르폴린, N-비닐모르폴린, N-비닐메틸모르폴린, N-비닐에틸모르폴린, N-아크릴로일모르폴린, N-코코모르폴린, N-(2-아미노에틸)모르폴린, N-(2-시아노에틸)모르폴린, N-(2-히드록시에틸)모르폴린, N-(2-히드록시프로필)모르폴린, N-아세틸모르폴린, N-포밀모르폴린, N-메틸모르폴린-N-옥사이드; 메틸피리딘; N-메틸피페리딘, 3,5-디메틸피페리딘, N-에틸피페리딘, N-(2-히드록시에틸)피페리딘; N-비닐피페리돈, N-비닐메틸피페리돈, N-비닐에틸피페리돈, N-아크릴로일피페리돈, N-메틸-4-피페리돈, N-비닐-2-피페리돈; N-메틸피롤리딘; N-비닐피롤리돈, N-비닐메틸피롤리돈, N-비닐에틸-2-피롤리돈, N-아크릴로일피롤리돈, N-메틸피롤리돈, N-에틸-2-피롤리돈, N-이소프로필-2-피롤리돈, N-부틸-2-피롤리돈, N-t-부틸-2-피롤리돈, N-헥실-2-피롤리돈, N-옥틸-2-피롤리돈, N-벤질-2-피롤리돈, N-시클로헥실-2-피롤리돈, N-비닐-2-피롤리돈, N-(2-히드록시에틸)-2-피롤리돈, N-(2-메톡시에틸)-2-피롤리돈, N-(2-메톡시프로필)-2-피롤리돈, N-(2-에톡시에틸)-2-피롤리돈; N-메틸 이미다졸리디논, 디메틸이미다졸리디논, N-(2-히드록시에틸)-2-이미다졸리디논; 테트라히드로퓨란, 테트라히드로-2-퓨란메탄올; N-메틸아닐린, N-에틸아닐린, N,N-디메틸아닐린, N-(2-히드록시에틸)아닐린, N,N-비스-(2-히드록시에틸)아닐린, N-에틸-N-(2-히드록시에틸)아닐린; N,N-디에틸-o-톨루이딘, N-에틸-N-(2-히드록시에틸)-m-톨루이딘; 디메틸벤질아민; γ-부티로락톤; 에틸렌카보네이트, 프로필렌카보네이트; N-비닐카바졸, N-아크릴로일카바졸 등을 들 수 있으며, 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.The cyclic compound is not particularly limited as long as it satisfies the boiling point and the solubility parameter of Hansen. Examples thereof include piperazine, morpholine, pyridine, piperidine, piperidone, pyrrolidine, pyrrolidone, Imidazolidinone type, furan type, aniline type, toluidine type, amine type, lactone type, carbonate type, carbazole type compound, etc. are mentioned. Specific examples include piperazine, N-methylpiperazine, N-ethylpiperazine, N-vinylpiperazine, N-vinylmethylpiperazine, N-vinylethylpiperazine, N-vinyl-N'-methylpiperazine, N-acryloylpiperazine, N-acryloyl-N'-methylpiperazine, hydroxyethylpiperazine, N- (2-aminoethyl) piperazine, N, N'-dimethylpiperazine; Morpholine, N-methylmorpholine, N-ethylmorpholine, N-phenylmorpholine, N-vinylmorpholine, N-vinylmethylmorpholine, N-vinylethylmorpholine, N-acryloylmorpholine, N Cocomorpholine, N- (2-aminoethyl) morpholine, N- (2-cyanoethyl) morpholine, N- (2-hydroxyethyl) morpholine, N- (2-hydroxypropyl) morpho Pauline, N-acetylmorpholine, N-formylmorpholine, N-methylmorpholine-N-oxide; Methylpyridine; N-methylpiperidine, 3,5-dimethylpiperidine, N-ethylpiperidine, N- (2-hydroxyethyl) piperidine; N-vinylpiperidone, N-vinylmethylpiperidone, N-vinylethylpiperidone, N-acryloylpiperidone, N-methyl-4-piperidone, N-vinyl-2-piperidone; N-methylpyrrolidine; N-vinylpyrrolidone, N-vinylmethylpyrrolidone, N-vinylethyl-2-pyrrolidone, N-acryloylpyrrolidone, N-methylpyrrolidone, N-ethyl-2-pyrrolidone , N-isopropyl-2-pyrrolidone, N-butyl-2-pyrrolidone, Nt-butyl-2-pyrrolidone, N-hexyl-2-pyrrolidone, N-octyl-2-pyrroli Don, N-benzyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N- (2-hydroxyethyl) -2-pyrrolidone, N -(2-methoxyethyl) -2-pyrrolidone, N- (2-methoxypropyl) -2-pyrrolidone, N- (2-ethoxyethyl) -2-pyrrolidone; N-methyl imidazolidinone, dimethylimidazolidinone, N- (2-hydroxyethyl) -2-imidazolidinone; Tetrahydrofuran, tetrahydro-2-furanmethanol; N-methylaniline, N-ethylaniline, N, N-dimethylaniline, N- (2-hydroxyethyl) aniline, N, N-bis- (2-hydroxyethyl) aniline, N-ethyl-N- ( 2-hydroxyethyl) aniline; N, N-diethyl-o-toluidine, N-ethyl-N- (2-hydroxyethyl) -m-toluidine; Dimethylbenzylamine; γ-butyrolactone; Ethylene carbonate, propylene carbonate; N-vinyl carbazole, N-acryloyl carbazole, etc. are mentioned, These can be used individually or in mixture of 2 or more types.
고리형 화합물은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 100중량%에 대하여 0.1 내지 50중량%로 포함되는 것이 바람직하고, 보다 바람직하게는 1 내지 10중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 실리콘 웨이퍼 표면의 젖음성을 효과적으로 개선시켜 텍스쳐 품질 편차를 최소화킴으로써 균일성을 향상시킬 수 있다.The cyclic compound is preferably included in an amount of 0.1 to 50% by weight, more preferably 1 to 10% by weight based on 100% by weight of the total amount of the texture etching solution composition of the crystalline silicon wafer. If the content falls within the above range, uniformity may be improved by effectively improving the wettability of the silicon wafer surface to minimize texture quality variation.
고리형 화합물은 수용성 극성 용매와 혼합된 것일 수도 있다.The cyclic compound may be mixed with a water soluble polar solvent.
수용성 극성 용매는 상기 고분자의 경우와 동일한 용매를 사용할 수 있다. 수용성 극성 용매는 고리형 화합물 총 100중량%에 대하여 0.1 내지 30중량%로 포함될 수 있다.As the water-soluble polar solvent, the same solvent as that of the polymer may be used. The water soluble polar solvent may be included in an amount of 0.1 to 30% by weight based on 100% by weight of the cyclic compound.
선택적으로, 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 지방산 또는 이의 금속염; 및 폴리옥시에틸렌계(POE) 화합물, 폴리옥시프로필렌계(POP) 화합물 및 이들의 공중합체인 계면활성제로 이루어진 군으로부터 선택된 1종 이상의 첨가제를 더 포함할 수 있다.Optionally, the texture etchant composition of the crystalline silicon wafer of the present invention may comprise fatty acids or metal salts thereof; And at least one additive selected from the group consisting of a polyoxyethylene-based (POE) compound, a polyoxypropylene-based (POP) compound, and a surfactant which is a copolymer thereof.
지방산 및 이의 금속염은 다당류와 함께 사용되어 알칼리 화합물에 의한 과에칭을 방지함으로써 균일한 미세 피라미드를 형성하고 동시에 에칭에 의해 생성된 수소 버블을 실리콘 웨이퍼 표면으로부터 빨리 떨어뜨려 버블 스틱 현상이 발생하는 것도 방지하는 성분이다.Fatty acids and their metal salts are used in conjunction with polysaccharides to prevent overetching by alkali compounds, forming a uniform fine pyramid and at the same time quickly dropping the hydrogen bubbles generated by etching from the surface of the silicon wafer to prevent the occurrence of bubble sticking. It is an ingredient to say.
지방산은 카르복시기를 함유하는 탄화수소 사슬의 카르복시산으로서, 구체적으로 아세트산, 프로피온산, 부틸산, 발레르산, 에난틱산, 카프릴산, 펠라곤산, 카프릭산, 라우르산, 미리스트산, 팔미트산, 스테아르산, 아라키드산, 베헨산, 리그노세린산, 세로트산, 에이코사펜타엔산, 도코사헥사엔산, 리놀레산, α-리놀렌산, γ-리놀렌산, 디호모-γ-리놀렌산, 아라키돈산, 올레산, 엘라이드산, 에루스산, 네르본산 등을 들 수 있다. 또한, 지방산의 금속염은 위 지방산과 NaOH 또는 KOH와 같은 금속염의 에스테르 반응물을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.Fatty acids are carboxylic acids of hydrocarbon chains containing carboxyl groups, specifically acetic acid, propionic acid, butyric acid, valeric acid, enantiic acid, caprylic acid, pelagonic acid, capric acid, lauric acid, myristic acid, palmitic acid, Stearic acid, arachidic acid, behenic acid, lignoseric acid, serotic acid, eicosapentaenoic acid, docosahexaenoic acid, linoleic acid, α-linolenic acid, γ-linolenic acid, dihomo-γ-linolenic acid, arachidonic acid, Oleic acid, elideic acid, erucic acid, nerbonic acid, and the like. In addition, the metal salt of a fatty acid may include an ester reactant of the above fatty acid with a metal salt such as NaOH or KOH. These can be used individually or in mixture of 2 or more types.
지방산 및 이의 금속염은 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 10-9 내지 10중량%로 포함될 수 있으며, 바람직하게는 10-6 내지 1중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 과에칭을 효과적으로 방지할 수 있다.The fatty acid and its metal salt may be included in the amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer, preferably 10 -6 to 1% by weight. When the content falls within the above range, over-etching can be effectively prevented.
폴리옥시에틸렌계(POE) 화합물, 폴리옥시프로필렌계(POP) 화합물 및 이들의 공중합체는 히드록시기를 갖는 계면활성제로서 텍스쳐 에칭액 조성물 중 히드록시 이온[OH-]의 활동도를 조절하여 Si100 방향과 Si111 방향에 대한 에칭 속도의 차이를 감소시킬 뿐만 아니라 결정성 실리콘 웨이퍼 표면의 젖음성을 개선시켜 에칭에 의해 생성된 수소 버블을 빠르게 떨어뜨려 버블 스틱 현상이 발생하는 것도 방지하는 성분이다.Polyoxyethylene-based (POE) compounds, polyoxypropylene-based (POP) compounds, and copolymers thereof are surfactants having a hydroxy group, and the activity of hydroxy ions [OH − ] in the texture etching solution composition is adjusted to control the Si 100 direction. Not only does it reduce the difference in etching rate in the Si 111 direction, but also improves the wettability of the surface of the crystalline silicon wafer, thereby rapidly dropping the hydrogen bubbles generated by etching to prevent the occurrence of bubble stick phenomenon.
폴리옥시에틸렌계(POE) 계면활성제로는 폴리옥시에틸렌글리콜, 폴리옥시에틸렌글리콜메틸에테르, 폴리옥시에틸렌모노알릴에테르, 폴리옥시에틸렌네오펜틸에테르, 폴리에틸렌글리콜모노(트리스티릴페닐)에테르, 폴리옥시에틸렌세틸에테르, 폴리옥시에틸렌라우릴에테르, 폴리옥시에틸렌올레일에테르, 폴리옥시에틸렌스테아릴에테르, 폴리옥시에틸렌트리데실에테르, 폴리옥시에틸렌데실에테르, 폴리옥시에틸렌옥틸에테르, 폴리옥시에틸렌비스페놀-A에테르, 폴리옥시에틸렌글리세린에테르, 폴리옥시에틸렌노닐페닐에테르, 폴리옥시에틸렌벤질에테르, 폴리옥시에틸렌페닐에테르, 폴리옥시에틸렌옥틸페닐에테르, 폴리옥시에틸렌페놀에테르, 알킬기의 탄소수가 6-30인 폴리옥시에틸렌알킬시클로헥실에테르, 폴리옥시에틸렌β-나프톨에테르, 폴리옥시에틸렌 캐스터 에테르(polyoxyethylene castor ether), 폴리옥시에틸렌 수소화 캐스터 에테르(polyoxyethylene hydrogenated castor ether); 폴리옥시에틸렌라우릴에스테르, 폴리옥시에틸렌스테아릴에스테르, 폴리옥시에틸렌올레일에스테르; 폴리옥시에틸렌라우릴아민, 폴리옥시에틸렌스테아릴아민, 폴리옥시에틸렌탈로우아민 등을 들 수 있다. 또한, 폴리옥시프로필렌계(POP) 계면활성제로는 폴리프로필렌글리콜을 들 수 있다. 또한, 폴리옥시에틸렌계(POE) 화합물과 폴리옥시프로필렌계(POP)계 화합물의 공중합체로는 폴리옥시에틸렌-폴리옥시프로필렌 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 데카닐에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 운데카닐에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 도데카닐에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 테트라데카닐에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 2-에틸헥실에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 라우릴에테르 공중합체, 폴리옥시에틸렌-폴리옥시프로필렌 스테아릴에테르 공중합체, 글리세린 부가형 폴리옥시에틸렌-폴리옥시프로필렌 공중합체, 에틸렌디아민 부가형 폴리옥시에틸렌-폴리옥시프로필렌 공중합체 등을 들 수 있다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.As polyoxyethylene type (POE) surfactant, polyoxyethylene glycol, polyoxyethylene glycol methyl ether, polyoxyethylene monoallyl ether, polyoxyethylene neopentyl ether, polyethylene glycol mono (tristyrylphenyl) ether, polyoxy Ethylene cetyl ether, polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene stearyl ether, polyoxyethylene tridecyl ether, polyoxyethylene decyl ether, polyoxyethylene octyl ether, polyoxyethylene bisphenol-A Polyoxyethylene having 6 to 30 carbon atoms in ether, polyoxyethylene glycerin ether, polyoxyethylene nonylphenyl ether, polyoxyethylene benzyl ether, polyoxyethylene phenyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene phenol ether, alkyl group Ethylene alkylcyclohexyl ether, polyoxyethylene (beta) -naphthol ether, polyox Ethylene castor ether (polyoxyethylene castor ether), polyoxyethylene hydrogenated castor ether (polyoxyethylene hydrogenated castor ether); Polyoxyethylene lauryl ester, polyoxyethylene stearyl ester, polyoxyethylene oleyl ester; Polyoxyethylene laurylamine, polyoxyethylene stearylamine, polyoxyethylene tallowamine, etc. are mentioned. Moreover, polypropylene glycol is mentioned as polyoxypropylene system (POP) surfactant. In addition, as a copolymer of a polyoxyethylene-based (POE) compound and a polyoxypropylene-based (POP) -based compound, polyoxyethylene-polyoxypropylene copolymer, polyoxyethylene-polyoxypropylene decanyl ether copolymer, polyoxyethylene Polyoxypropylene undecanyl ether copolymer, polyoxyethylene-polyoxypropylene dodecanyl ether copolymer, polyoxyethylene-polyoxypropylene tetradecanyl ether copolymer, polyoxyethylene-polyoxypropylene 2-ethylhexyl ether air Copolymer, polyoxyethylene-polyoxypropylene lauryl ether copolymer, polyoxyethylene-polyoxypropylene stearyl ether copolymer, glycerin addition polyoxyethylene-polyoxypropylene copolymer, ethylenediamine addition polyoxyethylene-polyoxypropylene And copolymers. These can be used individually or in mixture of 2 or more types.
폴리옥시에틸렌계(POE) 화합물, 폴리옥시프로필렌계(POP) 화합물 및 이들의 공중합체인 계면활성제는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 총 중량 대비 10-9 내지 10중량%로 포함될 수 있고, 바람직하게는 10-6 내지 1중량%, 보다 바람직하게는 0.00001 내지 0.1중량%인 것이 좋다. 함량이 상기 범위에 해당되는 경우 결정성 실리콘 웨이퍼 표면의 텍스쳐 시 위치별 텍스쳐 품질의 편차를 감소시킬 수 있다.The polyoxyethylene-based (POE) compound, the polyoxypropylene-based (POP) compound, and a copolymer thereof and a surfactant thereof may be included in an amount of 10 -9 to 10% by weight based on the total weight of the texture etching solution composition of the crystalline silicon wafer. Is 10 -6 to 1% by weight, more preferably 0.00001 to 0.1% by weight. When the content falls within the above range, it is possible to reduce the variation of the texture quality by location when the surface of the crystalline silicon wafer surface is textured.
본 발명에 따른 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 상기 성분들을 구체적인 필요에 따라 적절하게 채택한 후, 물을 첨가하여 전체 조성을 조절하게 되어 전체 조성물의 잔량은 물이 차지한다. 바람직하게는 상기 성분들이 전술한 함량 범위를 갖도록 조절한다.In the texture etching solution composition of the crystalline silicon wafer according to the present invention, after appropriately adopting the above components according to specific needs, water is added to adjust the overall composition so that the remaining amount of the total composition is occupied by water. Preferably the components are adjusted to have the aforementioned content ranges.
물의 종류는 특별히 한정되지 않으나, 탈이온 증류수인 것이 바람직하고, 보다 바람직하게는 반도체 공정용 탈이온 증류수로서 비저항값이 18㏁/㎝ 이상인 것이 좋다.Although the kind of water is not specifically limited, It is preferable that it is deionized distilled water, More preferably, it is preferable that the specific resistance value is 18 kW / cm or more as deionized distilled water for a semiconductor process.
상기와 같은 성분을 포함하여 구성되는 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은, 특히 설페이트계 음이온성 계면활성제를 포함함으로써 실리콘 결정 방향에 대한 에칭 속도의 차이를 제어하여 알칼리 화합물에 의한 과에칭을 방지함으로써 결정성 실리콘 웨이퍼 표면의 위치별 텍스쳐의 품질 편차를 최소화, 즉 텍스쳐의 균일성을 향상시켜 태양광의 흡수량을 극대화시킬 수 있다. 또한, 텍스쳐 에칭 공정 중 별도의 에칭액 성분을 투입할 필요가 없고 에어레이팅 장비도 도입할 필요가 없어 생산성과 비용 면에서 이점이 있다.The texture etching solution composition of the crystalline silicon wafer of the present invention comprising the above components comprises, in particular, sulfate-based anionic surfactants to control the difference in etching rate with respect to the silicon crystal direction to overetch with alkali compounds. By minimizing the quality of the crystalline silicon wafer surface, the quality variation of the texture may be minimized, that is, the uniformity of the texture may be improved to maximize the absorption of sunlight. In addition, there is no need to add a separate etchant component during the texture etching process, and there is no need to introduce an air rating equipment, which is advantageous in terms of productivity and cost.
본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물은 통상의 에칭 공정, 예컨대 딥방식, 분무방식 및 매엽방식의 에칭 공정에 모두 적용 가능하다.The texture etching liquid composition of the crystalline silicon wafer of the present invention can be applied to all conventional etching processes, such as dip, spray and single wafer etching processes.
본 발명은 상기 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물을 이용한 결정성 실리콘 웨이퍼의 텍스쳐 에칭방법을 제공한다.The present invention provides a texture etching method of a crystalline silicon wafer using the texture etching liquid composition of the crystalline silicon wafer.
결정성 실리콘 웨이퍼의 텍스쳐 에칭방법은 본 발명의 결정성 실리콘웨이퍼의 텍스쳐 에칭액 조성물에 결정성 실리콘 웨이퍼를 침적시키는 단계, 또는 본 발명의 결정성 실리콘웨이퍼의 텍스쳐 에칭액 조성물을 결정성 실리콘 웨이퍼에 분무하는 단계, 또는 상기 두 단계를 모두 포함한다.The texture etching method of the crystalline silicon wafer may include depositing the crystalline silicon wafer on the texture etching solution composition of the crystalline silicon wafer of the present invention, or spraying the texture etching solution composition of the crystalline silicon wafer of the present invention onto the crystalline silicon wafer. Step, or both.
침적과 분무의 횟수는 특별히 한정되지 않으며, 침적과 분무를 모두 수행하는 경우 그 순서도 한정되지 않는다.The number of depositions and sprays is not particularly limited, and the order of both deposition and spraying is not limited.
침적, 분무 또는 침적 및 분무하는 단계는 50 내지 100℃의 온도에서 30초 내지 60분 동안 수행될 수 있다.Deposition, spraying or depositing and spraying may be performed for 30 seconds to 60 minutes at a temperature of 50 to 100 ° C.
상기한 바와 같은 본 발명의 결정성 실리콘 웨이퍼의 텍스쳐 에칭방법은 산소를 공급시키는 별도의 에어레이팅 장비를 도입할 필요가 없어 초기 생산 및 공정 비용 면에서 경제적일 뿐만 아니라 간단한 공정으로도 균일한 미세 피라미드 구조의 형성을 가능하게 한다.As described above, the texture etching method of the crystalline silicon wafer of the present invention does not need to introduce a separate air-rating apparatus for supplying oxygen, so it is economical in terms of initial production and processing costs, and is uniform even in a simple process. It allows the formation of a structure.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims, which are within the scope and spirit of the present invention. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
실시예 1-10 및 비교예 1-8Example 1-10 and Comparative Example 1-8
하기 표 1에 기재된 성분 및 조성비(중량%)에 잔량의 물을 첨가하여 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물을 제조하였다.The remaining amount of water was added to the components and composition ratios (wt%) shown in Table 1 below to prepare an etching liquid composition for texture of the crystalline silicon wafer.
표 1
Figure PCTKR2013007096-appb-T000001
 Table 1
Figure PCTKR2013007096-appb-T000001
실험예Experimental Example
단결정 실리콘 웨이퍼를 실시예 1 내지 실시예 10 및 비교예 1 내지 비교예 8의 결정성 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물에 각각 침지시켜 에칭하였다. 이 때 텍스쳐 조건은 온도 80℃, 시간 20분이었다.The single crystal silicon wafers were immersed in the etching liquid composition for texture of the crystalline silicon wafers of Examples 1 to 10 and Comparative Examples 1 to 8, respectively. The texture conditions at this time were the temperature of 80 degreeC, and 20 minutes.
1. 텍스쳐의 균일성 평가1. Evaluation of Texture Uniformity
텍스쳐의 균일성은 광학 현미경, SEM을 이용하고 피라미드 크기는 SEM을 이용하여 평가하였으며, 그 결과를 표 2 및 도 2(실시예 1)와 도 3(비교예 1)에 나타내었다.Texture uniformity was evaluated using an optical microscope, SEM, and pyramid size using an SEM, and the results are shown in Table 2 and FIGS. 2 (Example 1) and 3 (Comparative Example 1).
◎: 웨이퍼 전면 피라미드 형성◎: wafer front pyramid formation
○: 웨이퍼 일부 피라미드 미형성 (피라미드 구조 미형성 정도 5% 미만)○: No pyramid formation on some wafers (less than 5% of pyramid structure formation)
△: 웨이퍼 일부 피라미드 미형성 (피라미드 구조 미형성 정도 5 내지 50%)(Triangle | delta): Unformed part of pyramid of wafer (Pyramid structure unformed grade 5-50%)
Х: 웨이퍼 피라미드 미형성 (피라미드 미형성 정도 90% 이상)Х: no wafer pyramid (more than 90% of pyramid formation)
2. 텍스쳐의 반사율 평가2. Evaluation of reflectance of texture
텍스쳐 반사율은 자외선을 이용하여 400 내지 800㎚의 파장대를 갖는 빛을 조사하였을 때의 평균 반사율을 측정하였으며, 그 결과를 표 2에 나타내었다.Texture reflectance measured the average reflectance when irradiated with light having a wavelength range of 400 to 800nm using ultraviolet rays, the results are shown in Table 2.
표 2
Figure PCTKR2013007096-appb-T000002
 TABLE 2
Figure PCTKR2013007096-appb-T000002
표 2 및 도 2를 참고하면, 실시예 1 내지 10의 실리콘 웨이퍼의 텍스쳐용 에칭액 조성물은 단결정 실리콘 웨이퍼의 전면에 피라미드를 형성 정도가 매우 우수함을 알 수 있다. 이러한 텍스쳐 균일성 및 피라미드 형상으로 인해 실시예들로 형성된 실리콘 웨이퍼 텍스쳐는 10~11%의 낮은 반사율값을 나타냄을 알 수 있다.Referring to Table 2 and Figure 2, it can be seen that the etching liquid composition for the texture of the silicon wafers of Examples 1 to 10 has a very good degree of pyramid formation on the entire surface of the single crystal silicon wafer. Due to the texture uniformity and pyramid shape, it can be seen that the silicon wafer texture formed by the embodiments has a low reflectance value of 10-11%.
그리고 3D 광학 현미경 또는 SEM 분석을 통해 고배율로 확대하여 피라미드 형성 정도를 확인한 결과 고밀도의 피라미드가 형성됨을 확인할 수 있었다.As a result of confirming the degree of pyramid formation by expanding at high magnification through 3D optical microscope or SEM analysis, it was confirmed that a high density pyramid was formed.
하지만, 비교예 1 내지 비교예 4의 웨이퍼의 텍스쳐용 에칭액 조성물은 도 3과 같이 웨이퍼 전면에 피라미드가 형성이 되지만 많은 부분에서 피라미드가 뭉개지거나, 또 일부에서는 피라미드가 형성되지 않은 부분이 존재하여 피라미드 형성 정도가 불량함을 확인할 수 있었다. However, in the etching liquid composition for the texture of the wafers of Comparative Examples 1 to 4, pyramids are formed on the entire surface of the wafer as shown in FIG. 3, but the pyramids are crushed in many parts, or in some parts, the pyramids are not present. It was confirmed that the degree of formation is poor.
비교예 5 내지 8의 경우는 웨이퍼의 90% 이상의 부분에서 피라미드가 형성되지 않음을 확인할 수 있었다. 또한, 에칭이 과도하여, 실리콘 웨이퍼 표면이 매우 반짝이는 표면을 보였다.In Comparative Examples 5 to 8, it was confirmed that pyramids were not formed at 90% or more of the wafer. In addition, the etching was excessive, and the surface of the silicon wafer showed a very shiny surface.

Claims (20)

  1. 하기 화학식 1의 무기염을 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물:A texture etching liquid composition of a crystalline silicon wafer comprising an inorganic salt of formula 1:
    [화학식 1][Formula 1]
    AxHyBAxHyB
    식 중에서, In the formula,
    A는 NH4 +, K+, Na+ 및 Li+로 이루어진 군에서 선택되고; A is selected from the group consisting of NH 4 + , K + , Na + and Li + ;
    B는 SO4 2- 또는 PO4 3-이고; B is SO 4 2- or PO 4 3- ;
    y는 B가 SO4 2-인 경우 2-x이며, B가 PO4 3-인 경우 3-x이고; y is 2-x when B is SO 4 2- and 3-x when B is PO 4 3- ;
    x 및 y는 0보다 큰 정수이다.x and y are integers greater than zero.
  2. 청구항 1에 있어서, 상기 화학식 1의 무기염은 제1 인산칼륨(potassium phosphate monobasic), 제2 인산칼륨(dipotassium hydrogen phosphate), 제1 인산나트륨(sodium phosphate monobasic), 제2 인산나트륨(disodium hydrogen phosphate), 제1 인산암모늄(ammonium phosphate monobasic), 제2 인산암모늄(ammonium phosphate dibasic), 황산수소칼륨(potassium hydrogen sulfate), 황산수소나트륨(sodium hydrogen sulfate) 및 황산수소암모늄(ammonium hydrogen sulfate)으로 이루어진 군에서 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The method according to claim 1, wherein the inorganic salt of Formula 1 is a first potassium phosphate monobasic, a second potassium phosphate (dipotassium hydrogen phosphate), a first sodium phosphate monobasic, a second sodium phosphate (disodium hydrogen phosphate ), First ammonium phosphate monobasic, second ammonium phosphate dibasic, potassium hydrogen sulfate, sodium hydrogen sulfate and ammonium hydrogen sulfate The texture etching liquid composition of the crystalline silicon wafer which is 1 or more types chosen from the group.
  3. 청구항 1에 있어서, 상기 화학식 1의 무기염은 에칭액 조성물 총 100중량%에 대하여 0.1 내지 10중량%로 포함되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 1, wherein the inorganic salt of Formula 1 is included in an amount of 0.1 to 10 wt% based on 100 wt% of the etching solution composition.
  4. 청구항 1에 있어서, 알칼리 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 1, further comprising an alkali compound.
  5. 청구항 4에 있어서, 상기 알칼리 화합물은 수산화칼륨, 수산화나트륨, 수산화암모늄, 테트라히드록시메틸암모늄 및 테트라히드록시에틸암모늄으로 이루어진 군으로부터 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 4, wherein the alkali compound is at least one selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetrahydroxymethylammonium, and tetrahydroxyethylammonium.
  6. 청구항 1에 있어서, 다당류를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 1, further comprising a polysaccharide.
  7. 청구항 6에 있어서, 상기 다당류는 글루칸계 화합물, 프룩탄계 화합물, 만난계 화합물, 갈락탄계 화합물 및 이들의 금속염으로 이루어진 군으로부터 선택된 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 6, wherein the polysaccharide is at least one selected from the group consisting of glucan compounds, fructan compounds, mannan compounds, galactan compounds, and metal salts thereof.
  8. 청구항 6에 있어서, 상기 다당류는 셀룰로오스, 디메틸아미노에틸셀룰로오스, 디에틸아미노에틸셀룰로오스, 에틸히드록시에틸셀룰로오스, 메틸히드록시에틸셀룰로오스, 4-아미노벤질셀룰로오스, 트리에틸아미노에틸셀룰로오스, 시아노에틸셀룰로오스, 에틸셀룰로오스, 메틸셀룰로오스, 카르복시메틸셀룰로오스, 카르복시에틸셀룰로오스, 히드록시에틸셀룰로오스, 히드록시프로필셀룰로오스, 알긴산, 아밀로오스, 아밀로펙틴, 펙틴, 스타치, 덱스트린, α-시클로덱스트린, β-시클로덱스트린, γ-시클로덱스트린, 히드록시프로필-β-시클로덱스트린, 메틸-β-시클로덱스트린, 덱스트란, 덱스트란설페이트나트륨, 사포닌, 글리코겐, 자이모산, 렌티난, 시조피난 및 이들의 금속염으로 이루어진 군으로부터 선택된 1종 이상의 글루칸계 화합물인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The method of claim 6, wherein the polysaccharide is cellulose, dimethylaminoethyl cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethylaminoethyl cellulose, cyanoethyl cellulose, Ethyl cellulose, methyl cellulose, carboxymethyl cellulose, carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, β-cyclodextrin, γ-cyclo At least one member selected from the group consisting of dextrin, hydroxypropyl-β-cyclodextrin, methyl-β-cyclodextrin, dextran, dextransulfate sodium, saponin, glycogen, zymoic acid, lentinan, sizopinean and metal salts thereof Crystalline seal that is a glucan compound Texture etching liquid composition of the cone wafer.
  9. 청구항 1에 있어서, 질소 원자를 적어도 하나 포함하는 탄소수 4 내지 10인 고리 화합물로 치환된 단량체가 중합된 고분자를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 1, further comprising a polymer polymerized with a monomer substituted with a cyclic compound having 4 to 10 carbon atoms including at least one nitrogen atom.
  10. 청구항 9에 있어서, 상기 단량체는 고리 구조에 산소 및 황 원자 중 적어도 하나를 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 9, wherein the monomer further comprises at least one of oxygen and sulfur atoms in a ring structure.
  11. 청구항 9에 있어서, 상기 단량체는 N-비닐피롤리돈, N-아크릴로일 모르폴린, N-비닐석신이미드, N-아크릴옥시석신이미드, N-비닐카프로락탐, N-비닐카바졸 및 N-아크릴로일피롤리딘으로 이루어진 군에서 선택되는 1종 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The method of claim 9, wherein the monomer is N-vinylpyrrolidone, N-acryloyl morpholine, N-vinyl succinimide, N-acryloxysuccinimide, N-vinyl caprolactam, N-vinylcarbazole and Texture etching liquid composition of at least one crystalline silicon wafer selected from the group consisting of N-acryloylpyrrolidine.
  12. 청구항 9에 있어서, 상기 고분자는 중량평균 분자량이 1,000 내지 1,000,000인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 9, wherein the polymer has a weight average molecular weight of 1,000 to 1,000,000.
  13. 청구항 9에 있어서, 상기 고분자는 비점이 100℃ 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etching solution composition of claim 9, wherein the polymer has a boiling point of 100 ° C. or more.
  14. 청구항 9에 있어서, 상기 고분자는 에칭액 조성물 총 중량 대비 10-12 내지 1 중량%로 포함되는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 9, wherein the polymer is included in an amount of 10 −12 to 1 wt% based on the total weight of the etchant composition.
  15. 청구항 1에 있어서, 고리형 화합물을 더 포함하는 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 1, further comprising a cyclic compound.
  16. 청구항 15에 있어서, 고리형 화합물은 비점이 100℃ 이상인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 15, wherein the cyclic compound has a boiling point of 100 ° C. or higher.
  17. 청구항 15에 있어서, 고리형 화합물은 한센의 용해도 파라미터가 6 내지 15인 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물.The texture etchant composition of claim 15, wherein the cyclic compound has a Hansen solubility parameter of 6 to 15. 16.
  18. 청구항 1 내지 17 중 어느 한 항의 에칭액 조성물에 의한 결정성 실리콘 웨이퍼의 텍스쳐 에칭 방법.The texture etching method of the crystalline silicon wafer by the etching liquid composition of any one of Claims 1-17.
  19. 청구항 18에 있어서, 상기 에칭액 조성물을 50 내지 100℃의 온도에서 30초 내지 60분 동안 분무시키는 것을 포함하는 에칭 방법.The etching method according to claim 18, comprising spraying the etchant composition at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.
  20. 청구항 18에 있어서, 상기 에칭액 조성물에 상기 웨이퍼를 50 내지 100℃의 온도에서 30초 내지 60분 동안 침적시키는 에칭 방법.The etching method according to claim 18, wherein the wafer is immersed in the etching liquid composition at a temperature of 50 to 100 ° C. for 30 seconds to 60 minutes.
PCT/KR2013/007096 2013-08-06 2013-08-06 Texture-etching solution composition for crystalline silicon wafers and texture-etching method WO2015020243A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2013/007096 WO2015020243A1 (en) 2013-08-06 2013-08-06 Texture-etching solution composition for crystalline silicon wafers and texture-etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2013/007096 WO2015020243A1 (en) 2013-08-06 2013-08-06 Texture-etching solution composition for crystalline silicon wafers and texture-etching method

Publications (1)

Publication Number Publication Date
WO2015020243A1 true WO2015020243A1 (en) 2015-02-12

Family

ID=52461559

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2013/007096 WO2015020243A1 (en) 2013-08-06 2013-08-06 Texture-etching solution composition for crystalline silicon wafers and texture-etching method

Country Status (1)

Country Link
WO (1) WO2015020243A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040108297A1 (en) * 2002-09-18 2004-06-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
KR20080084539A (en) * 2007-03-15 2008-09-19 삼성전자주식회사 Etchant for thin film transistor-liquid crystal displays
KR20090029441A (en) * 2007-09-18 2009-03-23 주식회사 동진쎄미켐 Etchant composition for patterning circuits in thin film transistor-liquid crystal devices
KR20120136882A (en) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR20130068759A (en) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040108297A1 (en) * 2002-09-18 2004-06-10 Memc Electronic Materials, Inc. Process for etching silicon wafers
KR20080084539A (en) * 2007-03-15 2008-09-19 삼성전자주식회사 Etchant for thin film transistor-liquid crystal displays
KR20090029441A (en) * 2007-09-18 2009-03-23 주식회사 동진쎄미켐 Etchant composition for patterning circuits in thin film transistor-liquid crystal devices
KR20120136882A (en) * 2011-06-10 2012-12-20 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR20130068759A (en) * 2011-12-16 2013-06-26 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers

Similar Documents

Publication Publication Date Title
WO2012169721A1 (en) Texture etching solution composition and texture etching method for crystalline silicon wafer
KR20130002258A (en) Texture etching solution composition and texture etching method of crystalline silicon wafers
WO2011046365A2 (en) Silver paste composition and solar cell using same
JP2014534630A (en) Texture etching solution composition for crystalline silicon wafer and texture etching method
CN104835724B (en) Form the composition and method of p-diffusion layer, and the method for preparing photovoltaic cell
WO2014014110A9 (en) Composition for forming passivation layer, semiconductor substrate having passivation layer, production method for semiconductor substrate having passivation layer, solar cell element, production method for solar cell element, and solar cell
WO2012144733A2 (en) Texture-etchant composition for a crystalline silicon wafer, and texture-etching method
WO2012169722A1 (en) Texture etching solution composition and texture etching method for crystalline silicon wafer
WO2013089338A1 (en) Texture etching solution composition of a crystalline silicon wafer and texture etching method
JP2017076802A (en) Passivation film-attached semiconductor substrate and manufacturing method therefor, and solar battery element and manufacturing method therefor
WO2013100318A1 (en) Texture etchant composition for crystalline silicon wafer, and texture etching method
WO2013058477A2 (en) Texture etching fluid composition and texture etching method for crystalline silicon wafers
WO2012091395A9 (en) Composition for a texture-etching solution, and texture-etching method for crystalline silicon wafers
WO2015020243A1 (en) Texture-etching solution composition for crystalline silicon wafers and texture-etching method
WO2012169788A2 (en) Single crystal silicon wafer and a fabrication method thereof
WO2013002502A2 (en) Texture etchant composition for crystalline silicon wafer and texture etching method thereof
WO2015133730A1 (en) Texture etchant composition for crystalline silicon wafer and texture etching method
WO2011028058A2 (en) Aluminum paste for a back electrode of solar cell
TWI680979B (en) Composition for passivation layer formation, semiconductor substrate with passivation layer and method of manufacturing the same, photovoltaic cell element and method of manufacturing the same, and photovoltaic cell
KR20140082220A (en) Texture etching solution composition and texture etching method of crystalline silicon wafers
KR20140082222A (en) Texture etching solution composition and texture etching method of crystalline silicon wafers
WO2015099411A1 (en) Conductive polymer film
KR102122049B1 (en) Texture etching solution composition and texture etching method of crystalline silicon wafers
CN104294368A (en) Texture etching solution composition and texture etching method of crystalline silicon wafers
KR101994084B1 (en) Texture etching solution composition and texture etching method of crystalline silicon wafers

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13891171

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13891171

Country of ref document: EP

Kind code of ref document: A1