WO2015008586A1 - 基板の製造方法および電子デバイスの製造方法 - Google Patents
基板の製造方法および電子デバイスの製造方法 Download PDFInfo
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- WO2015008586A1 WO2015008586A1 PCT/JP2014/066633 JP2014066633W WO2015008586A1 WO 2015008586 A1 WO2015008586 A1 WO 2015008586A1 JP 2014066633 W JP2014066633 W JP 2014066633W WO 2015008586 A1 WO2015008586 A1 WO 2015008586A1
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- planarizing film
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/1613—Constructional details or arrangements for portable computers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/007—Manufacture or processing of a substrate for a printed circuit board supported by a temporary or sacrificial carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0147—Carriers and holders
- H05K2203/016—Temporary inorganic, non-metallic carrier, e.g. for processing or transferring
Definitions
- the present technology relates to a substrate manufacturing method suitable for forming a highly flexible electronic device, and an electronic device manufacturing method using the substrate manufacturing method.
- a functional unit including an electronic circuit and a display body is provided on a substrate surface. If the substrate surface has defects such as scratches and depressions, it is desirable to repair those defects before forming the electronic circuit in order to suppress damage to the electronic circuit.
- a restoration agent is injected into defects such as scratches and depressions on the substrate surface such as glass, and after the restoration agent is cured, the substrate surface is flattened by locally polishing the cured restoration agent. It has been proposed to do.
- a substrate manufacturing method includes polishing a surface of a material substrate and forming a planarization film on the surface of the material substrate after polishing the surface of the material substrate. It is a waste.
- the surface of the material substrate is polished to remove convex defects such as protrusions existing on the surface of the material substrate. After that, by forming a planarizing film on the surface of the material substrate, concave defects such as dents existing on the surface of the material substrate and scratches caused by polishing are embedded with the planarizing film.
- An electronic device manufacturing method includes forming a substrate and forming a functional unit on the substrate, and forming the substrate includes manufacturing the substrate according to the present disclosure. It is performed by the method.
- the planarization film is formed on the surface of the material substrate. Since they are formed, it is possible to deal with both concave and convex defects on the substrate surface, and it is possible to improve the smoothness of the substrate surface.
- FIG. 1 It is a figure showing the flow of the manufacturing method of the board
- FIG. 7 is a cross-sectional view illustrating a process of forming a TFT layer on the substrate illustrated in FIG. 6. It is sectional drawing showing the process of forming a display body on a TFT layer. It is sectional drawing showing the process of peeling the substrate main body containing a raw material substrate and a planarization film
- FIG. 17 is a cross-sectional view for explaining the operation of the electronic device (display device) shown in FIG. 16. It is a figure showing the flow of the manufacturing method of the electronic device (display apparatus) which concerns on the modification 1. It is sectional drawing showing the process of forming a planarization film
- FIG. 10 is a cross-sectional view illustrating a configuration of an organic EL element as another example of the display body illustrated in FIG.
- FIG. 22 is a diagram illustrating an example of a pixel drive circuit illustrated in FIG. 21. It is a perspective view showing the external appearance of the application example 1 of an electronic device. 12 is another perspective view showing the appearance of application example 1. FIG. It is a perspective view showing the external appearance of the application example 2 of an electronic device. It is a perspective view showing the external appearance of the application example 3 of an electronic device. It is a perspective view showing the external appearance of the application example 4 of an electronic device. It is a perspective view showing the external appearance seen from the front side of the application example 5 of an electronic device.
- FIG. 14 is a perspective view illustrating an appearance of Application Example 5 as viewed from the back side.
- FIG. It is a perspective view showing the external appearance of the application example 6 of an electronic device. It is a perspective view showing the external appearance of the application example 7 of an electronic device. It is a perspective view showing the open state of the application example 8 of an electronic device.
- 12 is a perspective view illustrating a closed state of application example 8.
- FIG. It is a figure showing the closed state of the application example 9 of an electronic device. It is a figure showing the open state of the example 9 of application.
- Embodiment Example in which a resin film is formed as a planarizing film and a barrier coat made of an inorganic film is formed on the surface of the planarizing film.
- Modification 1 example of forming an inorganic film that also serves as a barrier coat as a planarizing film
- Modification 2 example having an organic EL (Electroluminescence) element as a display body
- the manufacturing method of the substrate 1 according to the present embodiment uses a flexible material substrate 10 such as a plastic film, and smoothes out the concave and convex defects present on the surface of the material substrate 10 to provide high smoothness.
- a substrate 1 having a surface is formed.
- the manufacturing method of the substrate 1 of the present embodiment includes polishing the surface of the material substrate 10 and forming the planarizing film 20 on the surface of the material substrate 10 after polishing the surface of the material substrate 10. Contains.
- substrate 1 is used for manufacture of electronic devices, such as a display apparatus and a sensor.
- the material substrate 10 is made of a flexible resin sheet (plastic sheet).
- the thickness of the material substrate 10 is preferably, for example, 200 ⁇ m or less, and more preferably 50 ⁇ m or less.
- polyethylene terephthalate polyethylene naphthalate, polyethersulfone, polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polyamide, polycarbonate, cellulose triacetate, polyolefin, polystyrene, polyethylene
- plastic sheet include polypropylene, polymethyl methacrylate, polyolefin, polyvinyl chloride, polyvinylidene chloride, epoxy resin, phenol resin, urea resin, melamine resin, silicone resin, and acrylic resin.
- the convex defect 11 and the concave defect 12 are present on the surface of the material substrate 10 as shown in FIG.
- the convex defect 11 for example, there can be a high protrusion 11A having a height of 2 ⁇ m or more from the reference surface 10A or a low protrusion 11B having a height of 2 ⁇ m or less from the reference surface 10A.
- the concave defect 12 may include a depression 12A that is recessed from the reference surface 10A in a crater shape, or a wound 12B that is dug in a wedge shape from the reference surface 10A.
- the depth of the depression 12A from the reference surface 10A is, for example, 2.0 ⁇ m or less, and the depth of the scratch 12B from the reference surface 10A is, for example, 1.0 ⁇ m or less.
- Such a material substrate 10 is attached to the support 30 using the adhesive layer 40 as shown in FIG. 3 before the polishing step (step S101 in FIG. 1).
- the polishing step and the step of forming the planarizing film 20 are performed in a state where the material substrate 10 is attached to the support 30, and the flatness of the back surface of the material substrate 10 can be ensured.
- the attachment of the material substrate 10 to the support 30 can be performed as follows, for example.
- the adhesive layer 40 is formed by applying to the support 30 or the material substrate 10 by a printing method such as spin coating, die coating, gravure coating, or applying an adhesive tape.
- the material substrate 10 is bonded and fixed to the support 30 with a laminator.
- the support 30 is preferably made of a material having a melting point of 500 ° C. or higher, such as quartz glass, heat-resistant glass, metal, or ceramic. Moreover, it is preferable that the linear expansion coefficient of the support body 30 is 10 ppm / K or less, for example. More preferably, the linear expansion coefficient of the support 30 is 0.1 ppm / K or more and 10 ppm / K or less.
- the thickness T30 of the support 30 is preferably 0.3 mm or more from the viewpoint of mechanical strength and handleability. More preferably, the thickness T30 of the support 30 is preferably 0.3 mm or greater and 2.0 mm or less.
- the adhesive layer 40 a general-purpose adhesive or adhesive tape can be used. Therefore, it is possible to peel the material substrate 10 from the support 30 and perform the functional unit 3 and the like described later on the substrate 1 without performing a special process for reducing the adhesive force.
- an acrylic adhesive, a silicone, a siloxane, a natural rubber adhesive, a synthetic rubber adhesive, or the like can be used.
- the polishing method may be mechanical polishing, or may use an abrasive (slurry) or the like whose pH is appropriately adjusted to increase polishing efficiency.
- a polishing method a method such as CMP (Chemical Mechanical Polishing), tape polishing, roll polishing, or the like can be used.
- the polishing step it is preferable to polish the entire surface of the material substrate 10. If only a part of the surface of the material substrate 10 is locally polished, the convex defect 11 may remain in a region that is not polished. Depending on the height, the remaining convex defect 11 cannot be covered even by the planarization film 20 formed in a later step, and the surface smoothness of the substrate 1 may be lowered.
- the height of the convex defect 11 is equal to or less than the thickness of the planarizing film 20 formed in a subsequent step, for example, 1 ⁇ m or less. If the height of the convex defect 11 is 1 ⁇ m or less, it can be covered by the planarizing film 20 formed in a later step.
- the depth D13 of the polishing flaw 13 is preferably equal to or less than the thickness of the planarizing film 20 formed in a later step, for example, 3 ⁇ m or less, and more preferably 1 ⁇ m or less. If the depth D13 of the polishing flaw 13 is about this level, the planarization can be performed by the planarization film 20 formed in a later step.
- step S103 in FIG. 1 After the surface of the material substrate 10 is polished, the surface of the material substrate 10 is cleaned in preparation for the formation of the planarizing film 20 in the next process (step S103 in FIG. 1). By the cleaning process, polishing residue, abrasive (slurry), etc. are removed to obtain a clean surface.
- a cleaning method water cleaning or organic cleaning, and in addition to this, ultrasonic cleaning or the like can be performed. Further, UV (ultraviolet) cleaning or ozone cleaning may be performed.
- a pretreatment is performed before the planarization film 20 is formed (step S104 in FIG. 1).
- the pretreatment it is possible to perform UV treatment, plasma treatment, silane coupling agent coating, or the like for improving the adhesion of the planarizing film 20.
- Step S105 in FIG. 1 After finishing the pretreatment, as shown in FIG. 5, a planarizing film 20 is formed on the surface of the material substrate 10 (step S105 in FIG. 1). Thereby, the concave defects 12 existing on the surface of the material substrate 10 and the polishing flaws 13 generated in the polishing process are filled with the planarizing film 20. At the same time, the convex defects 11 remaining after the polishing are covered with the planarizing film 20. Therefore, the surface of the planarizing film 20 is formed smoothly.
- the planarizing film 20 may be a resin film or an inorganic film.
- the resin film include acrylic and polyimide.
- inorganic films include SiOx films, SiNx films, SiON films, and Al 2 O 3 films.
- the planarizing film 20 may be a hybrid film of a resin film and an inorganic film.
- the planarizing film 20 can be made of TEOS (Tetraethyl orthosilicate), and the surface of the planarizing film 20 can be easily smoothed even if the concave defect 12 exists on the surface of the material substrate 10. .
- planarizing film 20 in the case of a resin film, methods such as slit coating, screen printing, gravure coating, spin coating, and spray coating can be used.
- CVD Chemical Vapor Deposition
- ALD Atomic Layer Deposition
- sputtering or the like can be used.
- the planarizing film 20 is made of a material having the same or substantially the same thermal behavior such as a thermal expansion coefficient and a thermal contraction.
- the planarization film 20 is preferably made of a material having high affinity such as a chemical composition or a functional group with the material substrate 10.
- the planarizing film 20 has heat resistance with respect to the temperature when the functional unit 3 is formed later.
- the thickness T20 of the planarizing film 20 is preferably thinner than the thickness T10 of the material substrate 10.
- the material substrate 10 is thinner than the planarization film 20, there is a possibility that the convex defects 11 remaining after the polishing of the surface of the material substrate 10 cannot be covered.
- the thermal contraction of the planarizing film 20 is large, the film contraction of the planarizing film 20 is increased due to a heating process or the like when forming the functional unit later, and the substrate 1 is warped.
- the thickness T20 of the planarizing film 20 is preferably, for example, 1/5 or less of the thickness T10 of the material substrate 10, more preferably 1/7 or less, and even more preferably 1/10 or less. .
- the planarization film 20 is sintered (post-baked) by an oven, an IR (infrared) furnace, or the like (step S106 in FIG. 1).
- the temperature at this time is preferably not higher than the heat resistance temperature of the material of each layer of the laminated structure including the material substrate 10, the planarizing film 20, the support 30 and the adhesive layer 40.
- a barrier coat 50 is formed on the surface of the planarizing film 20 (step S107 in FIG. 1).
- the barrier coat 50 has a thickness of several tens to several hundreds of nanometers, and is preferably composed of an inorganic film such as a SiOx film, a SiNx film, a SiON film, an Al 2 O 3 film, or a TEOS film.
- the substrate 1 is completed.
- Step of forming the functional unit 3 First, as shown in FIG. 8, the TFT layer 60 is formed on the surface of the barrier coat 50 of the substrate 1 (step S201 in FIG. 7).
- the display body 70 is formed on the TFT layer 60 (step S202 in FIG. 7). Thereby, the functional unit 3 that performs image display on the substrate 1 is formed.
- the substrate body 4 including the material substrate 10, the planarizing film 20, and the barrier coat 50 is peeled from the support 30 and the adhesive layer 40 as indicated by an arrow R ⁇ b> 1 in FIG. 10. (Step S301 in FIG. 7).
- the substrate body 4 and the functional unit 3 are cut by a cutting line CL, adjusted to a predetermined size and shape, and a flexible wiring board 5 is connected to form a module 6 ( Step S302 in FIG.
- the electronic device 2 is completed by incorporating the module 6 into a housing (not shown).
- the substrate body 4 can be peeled off from the support 30 after cutting and forming the module 6.
- the substrate 1 and the functional unit 3 are cut by a cutting line CL to be adjusted to a predetermined size and shape, and flexible wiring is performed.
- the module 6 is formed by connecting the substrate 5 (step S303 in FIG. 7).
- the substrate body 4 including the material substrate 10, the planarization film 20, and the barrier coat 50 is peeled from the support 30 and the adhesive layer 40. (Step S304 in FIG. 7).
- the electronic device 2 is completed by incorporating the module 6 into a housing (not shown).
- FIG. 14 shows a planar configuration of an electrophoretic element 71 as an example of the display body 70
- FIG. 15 shows a cross-sectional configuration of the electrophoretic element 71.
- the electrophoretic element 71 generates contrast using an electrophoretic phenomenon, and is applied to various electronic devices such as a display device.
- the electrophoretic element 71 includes, in an insulating liquid 72, electrophoretic particles 73 (first particles) and a porous layer 74 having pores 74A. 14 and 15 schematically show the configuration of the electrophoretic element 71, and may differ from actual dimensions and shapes.
- the insulating liquid 72 is made of an organic solvent such as paraffin or isoparaffin.
- One type of organic solvent may be used for the insulating liquid 72, or a plurality of types of organic solvents may be used. It is preferable to make the viscosity and refractive index of the insulating liquid 72 as low as possible. When the viscosity of the insulating liquid 72 is lowered, the mobility (response speed) of the migrating particles 73 is improved. Accordingly, the energy (power consumption) for moving the migrating particles 73 is lowered accordingly. When the refractive index of the insulating liquid 72 is lowered, the difference in refractive index between the insulating liquid 72 and the porous layer 74 is increased, and the reflectance of the porous layer 74 is increased.
- a coloring agent for example, a coloring agent, a charge adjusting agent, a dispersion stabilizer, a viscosity adjusting agent, a surfactant, or a resin may be added to the insulating liquid 72.
- the migrating particles 73 dispersed in the insulating liquid 72 are one or more charged particles, and the charged migrating particles 73 move through the pores 74A according to the electric field.
- the migrating particles 73 have an arbitrary optical reflection characteristic (light reflectance), and a contrast is generated due to a difference between the light reflectance of the migrating particles 73 and the light reflectance of the porous layer 74.
- the migrating particles 73 may be brightly displayed and the porous layer 74 may be darkly displayed, or the migrating particles 73 may be darkly displayed and the porous layer 74 may be brightly displayed.
- the electrophoretic element 71 When the electrophoretic element 71 is viewed from the outside, when the electrophoretic particles 73 are displayed brightly, the electrophoretic particles 73 are visually recognized as, for example, white or a color close to white, and when displayed darkly, for example, the electrophoretic particles 73 are displayed in black or a color close to black. Visible.
- the color of the migrating particles 73 is not particularly limited as long as contrast can be generated.
- the migrating particles 73 are made of particles (powder) such as organic pigments, inorganic pigments, dyes, carbon materials, metal materials, metal oxides, glass, or polymer materials (resins). One of these may be used for the migrating particles 73, or two or more of them may be used.
- the migrating particles 73 may be composed of pulverized particles or capsule particles of resin solids containing the particles. Note that materials corresponding to the carbon material, metal material, metal oxide, glass, or polymer material are excluded from materials corresponding to organic pigments, inorganic pigments, or dyes.
- the particle size of the migrating particles 73 is, for example, 30 nm to 300 nm.
- organic pigments examples include azo pigments, metal complex azo pigments, polycondensed azo pigments, flavanthrone pigments, benzimidazolone pigments, phthalocyanine pigments, quinacridone pigments, anthraquinone pigments, and perylene pigments.
- Inorganic pigments include, for example, zinc white, antimony white, iron black, titanium boride, bengara, mapico yellow, red lead, cadmium yellow, zinc sulfide, lithopone, barium sulfide, cadmium selenide, calcium carbonate, barium sulfate, lead chromate Lead sulfate, barium carbonate, lead white or alumina white.
- the dye include nigrosine dyes, azo dyes, phthalocyanine dyes, quinophthalone dyes, anthraquinone dyes, and methine dyes.
- the carbon material is, for example, carbon black.
- the metal material is, for example, gold, silver, or copper.
- metal oxides include titanium oxide, zinc oxide, zirconium oxide, barium titanate, potassium titanate, copper-chromium oxide, copper-manganese oxide, copper-iron-manganese oxide, and copper-chromium-manganese oxide. Or copper-iron-chromium oxide.
- the polymer material is, for example, a polymer compound in which a functional group having a light absorption region in the visible light region is introduced. If it is a high molecular compound which has a light absorption area
- the specific material of the migrating particles 73 is selected according to, for example, the role that the migrating particles 73 play to cause contrast.
- a metal oxide such as titanium oxide, zinc oxide, zirconium oxide, barium titanate or potassium titanate is used for the migrating particles 73.
- the migrating particles 73 may be, for example, a carbon material such as carbon black or copper-chromium oxide, copper-manganese oxide, copper-iron-manganese oxide, copper-chromium-manganese oxide.
- metal oxides such as copper-iron-chromium oxide are used.
- the migrating particles 73 made of a carbon material exhibit excellent chemical stability, mobility and light absorption.
- the content (concentration) of the migrating particles 73 in the insulating liquid 72 is not particularly limited, and is, for example, 0.1 wt% to 10 wt%. In this concentration range, the shielding and mobility of the migrating particles 73 are ensured. Specifically, if the content of the migrating particles 73 is less than 0.1% by weight, the migrating particles 73 are less likely to shield (hide) the porous layer 74, and it may be difficult to generate sufficient contrast. is there. On the other hand, when the content of the electrophoretic particles 73 is more than 10% by weight, the dispersibility of the electrophoretic particles 73 is lowered, and thus the electrophoretic particles 73 are difficult to migrate and may aggregate.
- the migrating particles 73 are easily dispersed and charged in the insulating liquid 72 for a long period of time and are difficult to be adsorbed on the porous layer 74. For this reason, for example, a dispersant is added to the insulating liquid 72.
- a dispersant and a charge control agent may be used in combination.
- This dispersing agent or charge adjusting agent has, for example, positive, negative, or both charges, and increases the amount of charge in the insulating liquid 72 and also causes the electrophoretic particles 73 to move by electrostatic repulsion. It is for dispersing.
- Examples of such a dispersing agent include Solsperce series manufactured by Lubrizol, BYK series or Anti-Terra series manufactured by BYK-Chemical, and Span series manufactured by TCI America.
- the migrating particles 73 may be subjected to a surface treatment.
- This surface treatment is, for example, rosin treatment, surfactant treatment, pigment derivative treatment, coupling agent treatment, graft polymerization treatment or microencapsulation treatment.
- long-term dispersion stability of the migrating particles 10 can be maintained by performing a graft polymerization process, a microencapsulation process, or a combination thereof.
- a material having a functional group capable of being adsorbed on the surface of the migrating particle 73 and a polymerizable functional group is used.
- the adsorbable functional group is determined according to the forming material of the migrating particles 73.
- the migrating particles 73 are made of a carbon material such as carbon black, an aniline derivative such as 4-vinylaniline, and when the migrating particles 10 are made of a metal oxide, methacrylic acid 3- Organosilane derivatives such as (trimethoxysilyl) propyl can be adsorbed respectively.
- the polymerizable functional group include a vinyl group, an acrylic group, and a methacryl group.
- a surface treatment may be performed by introducing a polymerizable functional group onto the surface of the migrating particle 73 and grafting it onto the surface (graftable material).
- the graft material has, for example, a polymerizable functional group and a dispersing functional group.
- the functional group for dispersion is to disperse the migrating particles 73 in the insulating liquid 72 and retain dispersibility due to the steric hindrance.
- the insulating liquid 72 is, for example, paraffin, a branched alkyl group can be used as the dispersing functional group.
- the polymerizable functional group include a vinyl group, an acrylic group, and a methacryl group.
- a polymerization initiator such as azobisisobutyronitrile (AIBN) may be used.
- the porous layer 74 can shield the migrating particles 73 and has a fibrous structure 74B and non-migrating particles 74C (second particles) held by the fibrous structure 74B.
- the porous layer 74 is a three-dimensional structure (irregular network structure such as a nonwoven fabric) formed by the fibrous structure 74B, and is provided with a plurality of gaps (pores 74A).
- the thickness of the porous layer 74 is small, a high reflectance can be obtained, the contrast of the electrophoretic element 71 can be improved, and the energy for moving the electrophoretic particles 73 can be reduced. Further, the average pore diameter of the pores 74 ⁇ / b> A is increased, and many pores 74 ⁇ / b> A are provided in the porous layer 74. Thereby, the migrating particles 73 are easily moved via the pores 74A, the response speed is improved, and the energy for moving the migrating particles 73 is further reduced.
- the thickness of such a porous layer 74 is, for example, 5 ⁇ m to 100 ⁇ m.
- the fibrous structure 74B is a fibrous substance having a sufficient length with respect to the fiber diameter (diameter). For example, a plurality of fibrous structures 21 are assembled and randomly overlapped to form the porous layer 74. One fibrous structure 74B may be entangled randomly to form the porous layer 74. Or the porous layer 74 by the one fibrous structure 74B and the porous layer 74 by the some fibrous structure 74B may be mixed.
- the fibrous structure 74B is made of, for example, a polymer material or an inorganic material.
- the polymer material include nylon, polylactic acid, polyamide, polyimide, polyethylene terephthalate, polyacrylonitrile, polyethylene oxide, polyvinyl carbazole, polyvinyl chloride, polyurethane, polystyrene, polyvinyl alcohol, polysulfone, polyvinyl pyrrolidone, polyvinylidene fluoride, poly Hexafluoropropylene, cellulose acetate, collagen, gelatin, chitosan or a copolymer thereof can be used.
- the inorganic material is, for example, titanium oxide.
- a polymeric material is preferably used for the fibrous structure 74B. This is because the polymer material has low reactivity to light, for example, and is chemically stable. That is, by using a polymer material, an unintended decomposition reaction of the fibrous structure 74B can be prevented.
- the fibrous structure 74B is made of a highly reactive material, the surface is preferably covered with an arbitrary protective layer.
- the fibrous structure 74B extends, for example, linearly.
- the shape of the fibrous structure 74B may be any shape.
- the fibrous structure 74B may be crimped or bent in the middle.
- fibrous structure 74B may be branched on the way.
- the average fiber diameter of the fibrous structure 74B is, for example, not less than 50 nm and not more than 2000 nm, but may be outside the above range. By reducing the average fiber diameter, light is easily diffusely reflected, and the pore diameter of the pores 74A is increased. The fiber diameter is determined so that the fibrous structure 74B can hold the non-migrating particles 74C. The average fiber diameter can be measured, for example, by microscopic observation using a scanning electron microscope or the like. The average length of the fibrous structure 74B is arbitrary.
- the fibrous structure 74B is formed by, for example, a phase separation method, a phase inversion method, an electrostatic (electric field) spinning method, a melt spinning method, a wet spinning method, a dry spinning method, a gel spinning method, a sol-gel method, or a spray coating method. Is done. By using such a method, the fibrous structure 74B having a sufficient length with respect to the fiber diameter can be easily and stably formed.
- the fibrous structure 74B is preferably composed of nanofibers.
- the nanofiber is a fibrous substance having a fiber diameter of 1 nm to 1000 nm and a length of 100 times or more of the fiber diameter.
- the fibrous structure 74B By using such a nanofiber as the fibrous structure 74B, light is easily diffusely reflected, and the reflectance of the porous layer 74 can be further improved. That is, the contrast of the electrophoretic element 71 can be improved.
- the fibrous structure 74B made of nanofibers the proportion of the pores 74A in the unit volume increases, and the migrating particles 73 can easily move through the pores 74A. Therefore, the energy for moving the migrating particles 73 can be reduced.
- the fibrous structure 74B made of nanofibers is preferably formed by an electrostatic spinning method. By using the electrostatic spinning method, the fibrous structure 74B having a small fiber diameter can be formed easily and stably.
- a fibrous structure 74B having a light reflectance different from that of the migrating particles 73 is preferable to use. Thereby, the contrast due to the difference in light reflectance between the porous layer 74 and the migrating particles 73 is easily formed.
- a fibrous structure 74 ⁇ / b> B that exhibits optical transparency (colorless and transparent) in the insulating liquid 72 may be used.
- the pores 74A are configured by overlapping a plurality of fibrous structures 74B or tangling one fibrous structure 74B.
- the pores 74A preferably have as large an average pore diameter as possible so that the migrating particles 73 can easily move through the pores 74A.
- the average pore diameter of the pores 74A is, for example, 0.1 ⁇ m to 10 ⁇ m.
- the non-migrating particles 74C are fixed to the fibrous structure 74B, and the light reflectance thereof is different from the light reflectance of the migrating particles 73.
- the non-migrating particles 74 ⁇ / b> C can be made of the same material as that of the migrating particles 73. Specifically, when the non-electrophoretic particle 74C (porous layer 74) displays brightly, the material when the electrophoretic particle 73 displays brightly, and when the non-electrophoretic particle 74C displays dark, the electrophoretic particle 73 darkens. Each material for display can be used. When the bright display is performed by the porous layer 74, it is preferable that the non-migrating particles 74C are made of a metal oxide.
- the non-migrating particles 74 ⁇ / b> C are made of a metal oxide having a high refractive index, for example, a rutile type titanium oxide.
- the constituent materials of the non-migrating particles 74C and the migrating particles 73 may be the same or different.
- the non-migrating particles 74C may be completely embedded in the fibrous structure 74B, or may be partially exposed from the fibrous structure 74C.
- the color visually recognized from the outside when the non-electrophoretic particle 74 ⁇ / b> C performs bright display or dark display is the same as that described for the electrophoretic particle 73.
- Such a porous layer 74 can be formed by the following method, for example. First, a constituent material of the fibrous structure 74B such as a polymer material is dissolved in an organic solvent to prepare a spinning solution. Next, the non-migrating particles 74C are added to the spinning solution and stirred sufficiently to disperse the non-migrating particles 74C. Finally, the spinning solution is spun by, for example, an electrostatic spinning method to fix the non-migrating particles 74C to the fibrous structure 74B, thereby forming the porous layer 74.
- the porous layer 74 may be formed by perforating a polymer film using a laser to form the pores 74A.
- the porous layer 74 may be a cloth knitted with synthetic fibers or the like on the porous layer 74, or may be continuous. A foam porous polymer may be used.
- the electrophoretic element 71 generates contrast by the difference between the light reflectance of the electrophoretic particles 73 and the light reflectance of the porous layer 74.
- the light reflectance for bright display is higher than the light reflectance for dark display.
- the light reflectance of the non-migrating particles 74 ⁇ / b> C is higher than that of the migrating particles 73 so that the porous layer 74 displays light and the migrating particles 73 display dark.
- the electrophoretic particles 73 move through the pores 74A of the porous layer 74 within a range where an electric field is applied. Depending on the area where the migrating particles 73 have moved or not moved, either bright display or dark display is performed, and an image is displayed.
- FIG. 16 illustrates an example of a cross-sectional configuration of an electronic device (display device) 2 that uses an electrophoretic element 71 as a display body 70.
- the electronic device 2 is an electrophoretic display (so-called electronic paper display) that displays an image (for example, character information) using an electrophoretic phenomenon.
- the functional unit 3 having the TFT layer 60 and the electrophoretic element 71 as the display body 70 is provided on the substrate 1.
- the TFT layer 60 includes, for example, a TFT 61, a protective layer 62, and a planarization insulating layer 63.
- the TFT 61 is a switching element for selecting a pixel.
- the TFT 61 may be an inorganic TFT using an inorganic semiconductor layer as a channel layer or an organic TFT using an organic semiconductor layer.
- the protective layer 62 and the planarization insulating layer 63 are made of an insulating resin material such as polyimide, for example. If the surface of the protective layer 62 is sufficiently flat, the planarization insulating layer 63 can be omitted.
- the display body 70 includes the pixel electrode 75, the above-described electrophoretic element 71, and the counter substrate 76.
- a spacer 77 is interposed between the TFT layer 60 and the counter substrate 76.
- the pixel electrode 75 is formed of, for example, a metal material such as gold (Au), silver (Ag), or copper (Cu).
- the pixel electrode 75 is connected to the TFT 61 through a contact hole (not shown) provided in the protective layer 62 and the planarization insulating layer 63.
- the TFT 61 and the pixel electrode 75 are arranged in a matrix or a segment according to the pixel arrangement, for example.
- the counter substrate 76 includes, for example, a plate member 76A and a counter electrode 76B, and the counter electrode 76B is provided on the entire surface of the plate member 76A (the surface facing the substrate 1). Similarly to the pixel electrode 75, the counter electrode 76B may be arranged in a matrix or a segment.
- the plate-like member 76A has light transparency and is made of, for example, an inorganic material, a metal material, a plastic material, or the like.
- the inorganic material include silicon (Si), silicon oxide (SiO x ), silicon nitride (SiN x ), and aluminum oxide (AlO x ).
- Silicon oxide includes glass or spin-on-glass (SOG).
- the metal material include aluminum (Al), nickel (Ni), and stainless steel
- examples of the plastic material include polycarbonate (PC), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyethyl ether. Ketone (PEEK) etc. are mentioned.
- a light-transmitting conductive material such as indium oxide-tin oxide (ITO), antimony-tin oxide (ATO), fluorine-doped tin oxide (FTO), or aluminum-doped zinc oxide (AZO).
- ITO indium oxide-tin oxide
- ATO antimony-tin oxide
- FTO fluorine-doped tin oxide
- AZO aluminum-doped zinc oxide
- the light transmittance (transmittance) of the counter electrode 76B is preferably as high as possible. 80% or more. Further, the electrical resistance of the counter electrode 76B is preferably as low as possible, for example, 100 ⁇ / ⁇ or less.
- the electrophoretic element 71 includes the electrophoretic particles 73 and the porous layer 74 having a plurality of pores 74A in the insulating liquid 72.
- the insulating liquid 72 is filled in a space between the TFT layer 60 and the counter substrate 76, and the porous layer 74 is supported by a spacer 77, for example.
- the space filled with the insulating liquid 72 is divided into, for example, a retreat area R1 near the pixel electrode 75 and a display area R2 near the counter electrode 76B with the porous layer 74 as a boundary. .
- the configurations of the insulating liquid 72, the migrating particles 73, and the porous layer 74 are the same as described above. In FIG. 16 and FIG. 17 to be described later, only a part of the pore 74A is shown in order to simplify the illustrated contents.
- the porous layer 74 may be adjacent to one of the pixel electrode 75 and the counter electrode 76B, and the retreat area R1 and the display area R2 may not be clearly separated.
- the migrating particles 73 move toward the pixel electrode 75 or the counter electrode 76B according to the electric field.
- the thickness of the spacer 77 is, for example, 10 ⁇ m to 100 ⁇ m, and is preferably as thin as possible. Thereby, power consumption can be suppressed.
- the spacer 77 is made of, for example, an insulating material such as a polymer material, and is provided, for example, in a lattice shape between the TFT layer 60 and the counter substrate 76.
- the arrangement shape of the spacers 77 is not particularly limited, but it is preferable to provide the spacers 77 so as not to disturb the movement of the migrating particles 73 and to distribute the migrating particles 73 uniformly.
- the migrating particles 73 are arranged in the retreat area R1 (FIG. 16). In this case, since the migrating particles 73 are shielded by the porous layer 74 in all pixels, no contrast is generated when the electrophoretic element 71 is viewed from the counter substrate 76 side (an image is not displayed). Is in a state.
- the migrating particles 73 are transferred from the retreat area R1 to the porous layer 74 for each pixel. It moves to display area R2 via (pore 74A).
- the migrating particles 73 include pixels that are shielded by the porous layer 74 and pixels that are not shielded, a state in which contrast occurs when the electrophoretic element 71 is viewed from the counter substrate 76 side. become. Thereby, an image is displayed.
- the planarization film 20 is formed on the surface of the material substrate 10, so that the concave defect 12 and the convex defect on the surface of the material substrate 10 are formed. 11 can be obtained, and it is possible to obtain the substrate 1 with few surface irregularities and excellent surface smoothness. Therefore, there is little damage to the electronic elements such as the TFT layer 60, and the yield can be improved.
- the material substrate 10 with less irregularities is preferable, and the acceptance criterion for the material substrate 10 is set high, which causes an increase in cost. It was.
- the acceptance criteria for the material substrate 10 can be relaxed, and the cost of the material substrate 10 can be suppressed.
- FIG. 18 shows a flow of a method for manufacturing the substrate 1 according to the first modification.
- This modification is the same as the method for manufacturing the substrate 1 of the above embodiment except that an inorganic film serving also as a barrier coat is formed as the planarizing film 20. Therefore, the process which overlaps with the said embodiment is demonstrated with reference to FIG. 2 thru
- Step S101 in FIG. 18 Step S101 in FIG. 18.
- step S103 in FIG. 18 the surface of the material substrate 10 is cleaned (step S103 in FIG. 18), and pre-processing is performed (step S104 in FIG. 18).
- Step S108 in FIG. 18 a planarizing film 20 is formed on the surface of the material substrate 10 (step S108 in FIG. 18).
- the concave defects 12 existing on the surface of the material substrate 10 and the polishing flaws 13 generated in the polishing process are filled with the planarizing film 20.
- the convex defects 11 remaining after the polishing are covered with the planarizing film 20. Therefore, the surface of the planarizing film 20 is formed smoothly.
- an inorganic film that also serves as a barrier coat is formed as the planarizing film 20.
- the material of the inorganic film include a SiOx film, a SiNx film, a SiON film, and an Al 2 O 3 film.
- the planarizing film 20 may be a hybrid film of a resin film and an inorganic film as long as it has a barrier coating performance.
- planarizing film 20 As a method for forming the planarizing film 20, slit coating, screen printing, gravure coating, spin coating, spray coating, CVD, ALD, sputtering, or the like can be used.
- the planarizing film 20 is made of a material having the same or substantially the same thermal behavior such as a thermal expansion coefficient and a thermal contraction.
- the planarization film 20 is preferably made of a material having high affinity such as a chemical composition or a functional group with the material substrate 10.
- the planarizing film 20 has heat resistance with respect to the temperature when the functional unit 3 is formed later.
- the thickness T20 of the planarizing film 20 is preferably thinner than the thickness T10 of the material substrate 10 as in the above embodiment.
- the material substrate 10 is thinner than the planarization film 20, there is a possibility that the convex defects 11 remaining after the polishing of the surface of the material substrate 10 cannot be covered.
- the thermal contraction of the planarizing film 20 is large, the contraction of the planarizing film 20 is increased due to a heating process or the like when forming the functional unit later, and the substrate 1 is warped.
- the thickness T20 of the planarizing film 20 is preferably, for example, 1/5 or less of the thickness T10 of the material substrate 10, more preferably 1/7 or less, and even more preferably 1/10 or less. .
- the planarizing film 20 is formed on the surface of the material substrate 10, and then planarized by an oven, an IR (infrared) furnace, or the like.
- the film 20 may be sintered (post-baked).
- the temperature at this time is preferably not higher than the heat resistance temperature of the material of each layer of the laminated structure including the material substrate 10, the planarizing film 20, the support 30 and the adhesive layer 40.
- the substrate 1 is completed.
- Modification 2 Next, Modification 2 will be described with reference to FIGS.
- an organic EL element 81 is formed as the display body 70, and an organic EL display is manufactured as the electronic device 2.
- FIG. 20 illustrates an example of a cross-sectional configuration of an electronic device (display device) 2 that uses an organic EL element 81 as a display body 70.
- the electronic device 2 is an organic EL display that displays an image using light emission of the organic EL element 81.
- the electronic device 2 has a function of having a TFT layer 60 and an organic EL element 81 as a display body 70 on the substrate 1.
- the part 3 is provided.
- the TFT layer 60 includes, for example, a TFT 64 and a planarization insulating layer 65.
- the TFT 64 is a so-called bottom gate type TFT and uses, for example, an oxide semiconductor for a channel (active layer).
- a gate electrode 64A, a gate insulating film (first gate insulating film 64B, second gate insulating film 64C), an oxide semiconductor layer 64D, a channel protective film 64E, and a source / drain electrode 64F are formed on the substrate 1. It is formed in order.
- a planarization insulating layer 65 for planarizing the unevenness of the TFT 64 over the entire surface of the substrate 1 is formed.
- the gate electrode 64A plays a role of controlling the carrier density (here, electron density) in the oxide semiconductor layer 64D by the gate voltage applied to the TFT 64.
- the gate electrode 64A is composed of a single layer film made of, for example, one of Mo, Al, and an aluminum alloy, or a laminated film made of two or more kinds.
- the aluminum alloy include an aluminum-neodymium alloy.
- the first gate insulating film 64B and the second gate insulating film 64C are a single layer film made of one of SiO 2 , Si 3 N 4 , silicon nitride oxide (SiON), aluminum oxide (Al 2 O 3 ), and the like. Or a laminated film composed of two or more of these.
- the first gate insulating film 64B and the second gate insulating film 64C have a two-layer structure, and the first gate insulating film 64B is made of, for example, a SiO 2 film, and the second gate insulating film 64C is made of, for example, a Si 3 N 4 film. It is configured.
- the total film thickness of the first gate insulating film 64B and the second gate insulating film 64C is, for example, 200 nm to 300 nm.
- the oxide semiconductor layer 64D contains, for example, at least one oxide of indium (In), gallium (Ga), zinc (Zn), tin (Sn), Al, and Ti as a main component.
- the oxide semiconductor layer 64D forms a channel between the source / drain electrodes 64F by applying a gate voltage.
- the thickness of the oxide semiconductor layer 64D is preferably such that it does not cause deterioration of the on-state current of the thin film transistor so that the negative charge affects the channel, and specifically, it is preferably 5 nm to 100 nm. .
- the channel protective film 64E is formed on the oxide semiconductor layer 64D and prevents the channel from being damaged when the source / drain electrode 64F is formed.
- the thickness of the channel protective film 64E is, for example, 10 to 300 nm.
- the source / drain electrode 64F is, for example, a single layer film made of one of Mo, Al, copper (Cu), Ti, ITO, TiO, or the like, or a laminated film made of two or more of these.
- a metal or metal compound having a weak bond with oxygen such as a three-layer film laminated in the order of Mo, Al, and Mo in a thickness of 50 nm, 500 nm, and 50 nm, or a metal compound containing oxygen such as ITO and titanium oxide It is desirable to use Accordingly, the electrical characteristics of the oxide semiconductor can be stably maintained.
- the planarization insulating layer 65 is made of an organic material such as polyimide or novolac.
- the thickness of the planarization layer 27 is, for example, 10 nm to 100 nm, and preferably 50 nm or less.
- An anode electrode 82 of the organic EL element 81 is formed on the planarization insulating layer 65.
- the organic EL element 81 has a configuration in which an anode electrode 82, a partition insulating film 83, an organic layer 84 including a light emitting layer, a cathode electrode 85, a protective layer 86, and a sealing substrate 87 are laminated on the TFT layer 60 in this order. is doing.
- the organic EL element 81 emits light emitted when the holes injected from the anode electrode 82 and the electrons injected from the cathode electrode 85 recombine in the light emitting layer of the organic layer 84 on the side opposite to the substrate 1 (cathode.
- This is a top emission type (top emission type) display element that extracts light from the electrode 83 side.
- the organic EL element 81 of the present disclosure is not limited to such a configuration, and may be, for example, a transmission type that extracts light from the substrate 1 side, that is, a bottom emission type (bottom emission type) display element.
- the anode electrode 82 is made of a highly reflective material, for example, Al, Ti, Cr, or the like.
- the anode electrode 82 is made of a transparent material such as ITO, IZO, IGZO or the like when the electronic device (display device) 2 is a transmissive type.
- the partition insulating film 83 is formed of an organic material such as polyimide or novolac, and has a function of ensuring insulation between the anode electrode 82 and the cathode electrode 85.
- the partition insulating film 83 is provided so as to surround the light emitting region of the anode electrode 82, and is provided on the connection portion between the source / drain electrode 64 F of the TFT 64 and the anode electrode 82.
- the organic layer 84 has a structure in which a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer are stacked in this order from the anode electrode 82 side.
- the organic layer 84 is formed by, for example, a vacuum deposition method or a spin coating method.
- the upper surface of the organic layer 84 is covered with a cathode electrode 85.
- the film thickness of each layer which comprises the organic layer 84, a constituent material, etc. are not specifically limited, An example is shown below.
- the hole injection layer is a buffer layer for increasing the efficiency of hole injection into the light emitting layer and preventing leakage.
- the thickness of the hole injection layer is, for example, preferably 5 nm to 200 nm, more preferably 8 nm to 150 nm.
- the constituent material of the hole injection layer may be appropriately selected in relation to the material of the electrode and the adjacent layer.
- polyaniline, polythiophene, polypyrrole, polyphenylene vinylene, polythienylene vinylene, polyquinoline, polyquinoxaline and derivatives thereof examples thereof include conductive polymers such as polymers containing an aromatic amine structure in the main chain or side chain, metal phthalocyanines (such as copper phthalocyanine), and carbon.
- Specific examples of the conductive polymer include oligoaniline and polydioxythiophene such as poly (3,4-ethylenedioxythiophene) (PEDOT).
- the hole transport layer is for increasing the efficiency of hole transport to the light emitting layer.
- the thickness of the hole transport layer 15B depends on the entire structure of the element, but is preferably 5 nm to 200 nm, and more preferably 8 nm to 150 nm, for example.
- a material constituting the hole transport layer a light emitting material soluble in an organic solvent, for example, polyvinyl carbazole, polyfluorene, polyaniline, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain , Polythiophene and its derivatives, polypyrrole or Alq3 can be used.
- the thickness of the light emitting layer is preferably, for example, 10 nm to 200 nm, more preferably 20 nm to 150 nm, although it depends on the overall structure of the device.
- the light emitting layer may be a single layer or a laminated structure. Specifically, a single red, green, and blue light emitting layer may be provided on the hole transport layer.
- the blue light emitting layer is a common layer of red, green and blue organic EL elements, the red organic EL element has a blue light emitting layer laminated on the red light emitting layer, and the green organic EL element has a blue color on the green light emitting layer.
- a light emitting layer may be laminated. Further, a red light emitting layer, a green light emitting layer, and a blue light emitting layer may be laminated, and a white organic EL element is formed by laminating them.
- the material constituting the light emitting layer may be a material corresponding to each emission color.
- a polyfluorene polymer derivative for example, a (poly) paraphenylene vinylene derivative, a polyphenylene derivative, a polyvinyl carbazole derivative, a polythiophene derivative, a perylene series.
- examples thereof include a dye, a coumarin dye, a rhodamine dye, or a polymer obtained by doping the above polymer with an organic EL material.
- the doping material for example, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6 and the like can be used.
- low molecular weight materials include benzine, styrylamine, triphenylamine, porphyrin, triphenylene, azatriphenylene, tetracyanoquinodimethane, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, Examples include anthracene, fluorenone, hydrazone, stilbene, or derivatives thereof, or heterocyclic conjugated monomers or oligomers such as polysilane compounds, vinylcarbazole compounds, thiophene compounds, and aniline compounds.
- a material constituting the light emitting layer in addition to the above materials, as the light emitting guest material, a material having high luminous efficiency, for example, an organic light emitting material such as a low molecular fluorescent material, a phosphorescent dye or a metal complex can be used.
- an organic light emitting material such as a low molecular fluorescent material, a phosphorescent dye or a metal complex
- the light-emitting layer may be, for example, a hole-transporting light-emitting layer that also serves as the above-described hole transport layer, or may be an electron-transporting light-emitting layer that also serves as an electron transport layer.
- the electron transport layer and the electron injection layer are for increasing the efficiency of electron transport to the light emitting layer.
- the total film thickness of the electron transport layer and the electron injection layer depends on the entire structure of the device, it is preferably, for example, 5 nm to 200 nm, more preferably 10 nm to 180 nm.
- a material for the electron transport layer an organic material having an excellent electron transport ability is preferably used. By increasing the efficiency of transporting electrons to the light emitting layer, a change in emission color due to the electric field intensity is suppressed.
- arylpyridine derivatives and benzimidazole derivatives are preferably used. This is because high electron supply efficiency is maintained even with a low driving voltage.
- the material for the electron injection layer include alkali metals, alkaline earth metals, rare earth metals and their oxides, composite oxides, fluorides, carbonates, and the like.
- the organic layer 84 is formed by a coating method such as a dipping method, a doctor blade method, a discharge coating method, a spray coating method, an ink jet method, an offset printing method, a relief printing method, an intaglio printing method in addition to a vacuum deposition method and a spin coating method.
- a coating method such as a dipping method, a doctor blade method, a discharge coating method, a spray coating method, an ink jet method, an offset printing method, a relief printing method, an intaglio printing method in addition to a vacuum deposition method and a spin coating method.
- Screen printing, microgravure coating, and other printing methods are also possible, and a dry process and a wet process may be used in combination according to the properties of each layer and each member.
- the cathode electrode 85 is made of, for example, a material having a thickness of about 10 nm, good light transmittance, and a small work function. Moreover, light extraction can be ensured also by forming a transparent conductive film using an oxide. In this case, ZnO, ITO, IZnO, InSnZnO, or the like can be used.
- the cathode electrode 85 may be a single layer or a laminated structure.
- the cathode electrode 85 is configured using a transflective material.
- the optical distance between the light reflecting surface on the anode electrode 82 side and the light reflecting surface on the cathode electrode 85 side is defined by the wavelength of light to be extracted, and the film thickness of each layer is set so as to satisfy this optical distance. Is set. In such a top emission type organic EL element 81, it is possible to improve the light extraction efficiency to the outside and control the emission spectrum by positively using this cavity structure.
- the protective layer 86 is for preventing moisture from entering the organic layer 84, and is formed using a material having low permeability and low water permeability, for example, with a thickness of 2 to 3 ⁇ m.
- the material of the protective layer 86 may be made of either an insulating material or a conductive material.
- Insulating materials include inorganic amorphous insulating materials such as amorphous silicon ( ⁇ -Si), amorphous silicon carbide ( ⁇ -SiC), amorphous silicon nitride ( ⁇ -Si 1-x N x ), amorphous carbon ( ⁇ -C) is preferred.
- Such an inorganic amorphous insulating material does not constitute grains, and thus has low water permeability and becomes a good protective film.
- the sealing substrate 87 is positioned on the cathode electrode 85 side of the organic EL element 81 and seals the organic EL element 81 together with an adhesive layer (not shown).
- the sealing substrate 87 is made of a material such as glass that is transparent to the light generated by the organic EL element 81.
- the sealing substrate 81 is provided with, for example, a color filter and a light-shielding film (not shown) as a black matrix, and extracts light generated in the organic EL elements 81 and between the organic EL elements 10. The external light reflected by the wiring is absorbed and the contrast is improved.
- the color filter has a red filter, a green filter, and a blue filter (all not shown), which are arranged in order.
- Each of the red filter, the green filter, and the blue filter is, for example, rectangular and has no gap.
- These red filter, green filter and blue filter are each composed of a resin mixed with a pigment, and by selecting the pigment, the light transmittance in the target red, green or blue wavelength region is high, The light transmittance in the wavelength range is adjusted to be low.
- the light-shielding film is formed of, for example, a black resin film having an optical density of 1 or more mixed with a black colorant, or a thin film filter using thin film interference. Of these, a black resin film is preferable because it can be formed inexpensively and easily.
- the thin film filter is formed by, for example, laminating one or more thin films made of metal, metal nitride, or metal oxide, and attenuating light by utilizing interference of the thin film. Specific examples of the thin film filter include those in which Cr and chromium oxide (III) (Cr 2 O 3 ) are alternately laminated.
- FIG. 21 shows a schematic configuration of the electronic device (display device) 2.
- the electronic device (display device) 2 is used as an organic EL television device or the like, and a functional unit 3 including a TFT layer 60 and a display body 70 is formed on a substrate 1.
- the functional unit 3 has a display area 110 ⁇ / b> A and a peripheral area 110 ⁇ / b> B on the substrate 1.
- a red organic EL element 81R that generates red light
- a green organic EL element 81G that generates green light
- a blue organic EL element 81B that generates blue light are sequentially matrixed as a whole.
- the peripheral area 110 ⁇ / b> B is arranged so as to surround the display area 110.
- a signal line driving circuit 120 and a scanning line driving circuit 130 which are drivers for displaying images are provided.
- a pixel drive circuit 140 is provided in the display area 110A.
- FIG. 22 illustrates an example of the pixel driving circuit 140.
- the pixel driving circuit 140 is an active driving circuit formed in the TFT layer 60 below the anode electrode 81. That is, the pixel drive circuit 140 includes a drive transistor Tr1 and a write transistor Tr2, a capacitor (holding capacitor) Cs between the transistors Tr1 and Tr2, a first power supply line (Vcc), and a second power supply line (GND).
- Vcc first power supply line
- GND second power supply line
- the drive transistor Tr1 and the write transistor Tr2 are configured by, for example, a bottom gate type oxide semiconductor TFT such as the TFT 64 shown in FIG.
- a plurality of signal lines 120A are arranged in the column direction, and a plurality of scanning lines 130A are arranged in the row direction.
- the intersection of each signal line 120A and each scanning line 130A corresponds to one of the red organic EL element 81R, the green organic EL element 81G, and the blue organic EL element 81B.
- Each signal line 120A is connected to the signal line drive circuit 120, and an image signal is supplied from the signal line drive circuit 120 to the source electrode of the write transistor Tr2 via the signal line 120A.
- Each scanning line 130A is connected to the scanning line driving circuit 130, and a scanning signal is sequentially supplied from the scanning line driving circuit 130 to the gate electrode of the writing transistor Tr2 via the scanning line 130A.
- a scanning signal is supplied from the scanning line driving circuit 130 to the gate of the writing transistor Tr2 for each pixel, and an image signal is written from the signal line driving circuit 120 to the writing transistor Tr2.
- This light is transmitted through the anode electrode 82 and the substrate 1 in the case of bottom emission (bottom emission), and in the case of top emission (top emission), the cathode 85, a color filter (not shown), and a sealing substrate. It passes through 87 and is taken out.
- the electronic device display device 2 as described above to an electronic device.
- the electronic device include a television device, a digital camera, a notebook personal computer, a mobile terminal device such as a mobile phone, or a video camera. That is, the display device can be applied to electronic devices in various fields that display a video signal input from the outside or a video signal generated inside as an image or video.
- the electronic book 210 includes, for example, a display unit 211, a non-display unit 212, and an operation unit 213. Note that the operation unit 213 may be provided on the front surface of the non-display unit 212 as illustrated in FIG. 23, or may be provided on the upper surface of the non-display unit 212 as illustrated in FIG. 24.
- the display unit 211 includes an electronic device (display device) 2.
- the electronic device (display device) 2 may be mounted on a PDA (Personal Digital Assistants) having the same configuration as the electronic book shown in FIGS.
- PDA Personal Digital Assistants
- FIG. 25 shows the appearance of the smartphone 220.
- the smartphone 220 includes, for example, a display unit 221 and a non-display unit 222.
- the display unit 221 includes an electronic device (display device) 2.
- FIG. 26 illustrates an appearance of a television device 230 to which the display device of the above embodiment is applied.
- the television device 230 includes, for example, a video display screen unit 233 including a front panel 231 and a filter glass 232.
- the video display screen unit 233 is configured by the electronic device (display device) 2.
- FIG. 27 shows the appearance of the tablet personal computer 240.
- the tablet personal computer 240 includes, for example, a touch panel unit 241 and a housing 242, and the touch panel unit 241 is configured by an electronic device (display device) 2.
- the digital still camera 250 includes, for example, a flash light emitting unit 251, a display unit 252, a menu switch 253, and a shutter button 254, and the display unit 252 includes an electronic device (display device) 2.
- FIG. 30 shows the appearance of the notebook personal computer 260.
- the notebook personal computer 260 includes, for example, a main body 261, a keyboard 262 for inputting characters and the like, and a display unit 263 for displaying an image.
- the display unit 263 is controlled by the electronic device (display device) 2. It is configured.
- FIG. 31 shows the appearance of the video camera 270.
- the video camera 270 includes, for example, a main body 271, a subject shooting lens 272 provided on the front side surface of the main body 271, a start / stop switch 273 at the time of shooting, and a display unit 274.
- the display unit 274 is configured by the electronic device (display device) 2.
- FIG. 32 and FIG. 33 show the appearance of another electronic book 280.
- the electronic book 280 is a thin flexible display formed by componentizing a soft material.
- the entire apparatus can be closed (folded) or opened like an actual book formed by binding a plurality of sheets (pages).
- the user can browse the content displayed on the electronic book 3 (for example, a page of the book) as if he / she is actually reading a book.
- the electronic book 280 is provided with a display portion 282 on a support substrate 281, and has a hinge portion 283 at a “back” portion (back 283A) in the book.
- a cover 284 made of a soft resin film is provided on the lower surface (the surface that becomes the outer side when closed) of the electronic book 280, and the upper surface (the surface that becomes the inner side when the cover is closed) is soft and can display light.
- a protective sheet 285 made of a resin film having transparency.
- the display unit 282 includes an electronic device (display device) 2.
- FIG. 1 The cellular phone 290 is formed by, for example, connecting an upper housing 291 and a lower housing 292 with a connecting portion (hinge portion) 293, and includes a display 294, a sub display 295, a picture light 296, and a camera 297. ing.
- the display 294 or the sub display 295 is configured by the electronic device (display device) 2.
- the present technology has been described with reference to the embodiments, the present technology is not limited to these embodiments and the like, and various modifications are possible.
- an electronic paper display and an organic EL display device have been described as the electronic device (display device) 2.
- other display devices such as a liquid crystal display device may be used.
- the electronic device 2 of the present technology can be applied to a sensor or the like in addition to a display device.
- each layer described in the above embodiments and the like, or the film formation method and film formation conditions are not limited, and may be other materials and thicknesses, or other film formation methods. Alternatively, film forming conditions may be used.
- substrate 1 and the electronic device 2 were specifically mentioned and demonstrated, the board
- the present technology can take the following configurations. (1) Polishing the surface of the substrate, Forming a planarizing film on the surface of the material substrate after polishing the surface of the material substrate. (2) The method for manufacturing a substrate according to (1), wherein the polishing and the planarizing film are formed in a state where the material substrate is attached to a support. (3) The method for manufacturing a substrate according to (1) or (2), wherein the planarizing film is made of a material having the same or substantially the same linear expansion coefficient as the material substrate. (4) The method for manufacturing a substrate according to any one of (1) to (3), wherein the planarizing film is made of a material having the same or substantially the same heat shrinkage as that of the material substrate.
- the depth of polishing scratches on the material substrate is set to be equal to or less than the thickness of the planarizing film.
- Forming a substrate; and forming a functional part on the substrate; Forming the substrate comprises: Polishing the surface of the substrate, Forming a planarizing film on the surface of the material substrate after polishing the surface of the material substrate.
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Abstract
Description
1.実施の形態(平坦化膜として樹脂膜を形成し、平坦化膜の表面に無機膜よりなるバリアコートを形成する例)
2.変形例1(平坦化膜としてバリアコートを兼ねる無機膜を形成する例)
3.変形例2(表示体として有機EL(Electroluminescence )素子を有する例)
4.適用例
まず、図1ないし図6を参照して、本開示の一実施の形態に係る基板の製造方法について説明する。本実施の形態の基板1の製造方法は、プラスチックフィルム等の可撓性を有する素材基板10を用い、この素材基板10の表面に存在する凹欠陥および凸欠陥を均して、平滑性の高い表面を有する基板1を形成するものである。本実施の形態の基板1の製造方法は、素材基板10の表面を研磨することと、素材基板10の表面を研磨したのちに、素材基板10の表面に平坦化膜20を形成することとを含んでいる。得られた基板1は、表示装置やセンサなどの電子デバイスの製造に用いられる。
素材基板10は、例えば図2に示したように、可撓性を有する樹脂シート(プラスチックシート)により構成されている。具体的には、素材基板10の厚みは、例えば、200μm以下であることが好ましく、50μm以下であればより好ましい。素材基板10の構成材料としては、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルスルホン、ポリエーテルイミド、ポリエーテルエーテルケトン、ポリフェニレンスルフィド、ポリアリレート、ポリイミド、ポリアミド、ポリカーボネート、セルローストリアセテート、ポリオレフィン、ポリスチレン、ポリエチレン、ポリプロピレン、ポリメチルメタクリレート、ポリオレフィン、ポリ塩化ビニル、ポリ塩化ビニリデン、エポキシ樹脂、フェノール樹脂、ユリア樹脂、メラミン樹脂、シリコーン樹脂、アクリル樹脂などのプラスチックシートが挙げられる。
素材基板10を支持体30に固定したのち、図4に示したように、研磨部材Pを用いて、素材基板10の表面を研磨する(図1のステップS102)。これにより、素材基板10の表面に存在する凸欠陥11が削り取られて除去される。
素材基板10の表面を研磨したのち、次工程の平坦化膜20の成膜に備えて、素材基板10の表面を洗浄する(図1のステップS103)。洗浄工程により、研磨カスや研磨剤(スラリー)などを除去して、清浄な表面を得る。洗浄方法は水洗もしくは有機洗浄、またこれに加えて超音波洗浄などを実施することも可能である。更に、UV(紫外線)洗浄またはオゾン洗浄も行うようにしてもよい。
素材基板10の表面を洗浄したのち、平坦化膜20を形成する前に、前処理を行う(図1のステップS104)。前処理では、平坦化膜20の密着性を向上させるためのUV処理、プラズマ処理、シランカップリング剤塗布などを行うことが可能である。
前処理を終了したのち、図5に示したように、素材基板10の表面に平坦化膜20を形成する(図1のステップS105)。これにより、素材基板10の表面に存在する凹欠陥12および研磨工程で生じた研磨傷13が平坦化膜20で埋め込まれる。これと同時に、研磨後に残存している凸欠陥11が平坦化膜20でカバーされる。よって、平坦化膜20の表面が平滑に形成される。
素材基板10の表面に平坦化膜20を形成したのち、オーブン、IR(infrared)炉などにより、平坦化膜20の焼結(ポストベーク)を行う(図1のステップS106)。この際の温度は、素材基板10、平坦化膜20、支持体30および粘着層40を含む積層構造体の各層の材料の耐熱温度以下で行うことが好ましい。また、焼成温度は、後の工程で樹脂膜が分解しない温度で行うことが好ましい。更に、樹脂膜などから脱ガスが極力出なくなるまで十分に加熱することが好ましい。
ポストベークを終了したのち、図6に示したように、平坦化膜20の表面にバリアコート50を形成する(図1のステップS107)。バリアコート50は、例えば、厚みが数十nm~数百nmであり、SiOx膜、SiNx膜、SiON膜、Al2 O3 膜、TEOS膜などの無機膜により構成されていることが好ましい。以上により、基板1が完成する。
続いて、図7ないし図13を参照して、本実施の形態に係る電子デバイス(表示装置)の製造方法について説明する。本実施の形態の電子デバイス2の製造方法は、上述した基板1の製造方法により基板1を形成したのち、この基板1に画像表示またはセンシング等の所望の機能を有する機能部3を形成し、切断およびモジュール化を行うものである。
まず、図8に示したように、基板1のバリアコート50の表面に、TFT層60を形成する(図7のステップS201)。
基板1に機能部3を形成したのち、図10の矢印R1に示したように、素材基板10、平坦化膜20およびバリアコート50を含む基板本体4を、支持体30および粘着層40から剥離する(図7のステップS301)。
以下、図14ないし図17を参照して、表示体70として電気泳動素子を形成し、電子デバイス2として電子ペーパーディスプレイを製造する例について説明する。
図18は、変形例1に係る基板1の製造方法の流れを表したものである。本変形例は、平坦化膜20としてバリアコートを兼ねる無機膜を形成することを除いては、上記実施の形態の基板1の製造方法と同じである。よって、上記実施の形態と重複する工程については、図2ないし図4を参照して説明する。
まず、上記実施の形態と同様にして、図2および図3に示した工程により、素材基板10を、支持体30に粘着層40を用いて貼り付ける(図18のステップS101)。
次いで、上記実施の形態と同様にして、図4に示した工程により、素材基板10の表面を研磨する(図18のステップS102)。これにより、素材基板10の表面に存在する凸欠陥11が削り取られて除去される。
続いて、次工程の平坦化膜20の成膜に備えて、素材基板10の表面を洗浄し(図18のステップS103)、前処理を行う(図18のステップS104)。
そののち、図19に示したように、素材基板10の表面に平坦化膜20を形成する(図18のステップS108)。これにより、素材基板10の表面に存在する凹欠陥12および研磨工程で生じた研磨傷13が平坦化膜20で埋め込まれる。これと同時に、研磨後に残存している凸欠陥11が平坦化膜20でカバーされる。よって、平坦化膜20の表面が平滑に形成される。
なお、平坦化膜20として樹脂膜と無機膜とのハイブリッド膜を形成した場合には、素材基板10の表面に平坦化膜20を形成したのち、オーブン、IR(infrared)炉などにより、平坦化膜20の焼結(ポストベーク)を行ってもよい。この際の温度は、素材基板10、平坦化膜20、支持体30および粘着層40を含む積層構造体の各層の材料の耐熱温度以下で行うことが好ましい。また、焼成温度は、後の工程で樹脂膜が分解しない温度で行うことが好ましい。更に、樹脂膜などから脱ガスが極力出なくなるまで十分に加熱することが好ましい以上により、基板1が完成する。
次に、図20ないし図22を参照して、変形例2について説明する。本変形例は、表示体70として有機EL素子81を形成し、電子デバイス2として有機ELディスプレイを製造するものである。
ス性の絶縁性材料は、グレインを構成しないため透水性が低く、良好な保護膜となる。
以下、上記のような電子デバイス(表示装置)2の電子機器への適用例について説明する。電子機器としては、例えばテレビジョン装置,デジタルカメラ,ノート型パーソナルコンピュータ、携帯電話等の携帯端末装置あるいはビデオカメラ等が挙げられる。すなわち、上記表示装置は、外部から入力された映像信号あるいは内部で生成した映像信号を、画像あるいは映像として表示するあらゆる分野の電子機器に適用することが可能である。
図23および図24は、電子ブック210の外観構成を表している。この電子ブック210は、例えば、表示部211および非表示部212と、操作部213とを備えている。なお、操作部213は、図23に示したように非表示部212の前面に設けられていてもよいし、図24に示したように非表示部212の上面に設けられていてもよい。表示部211が電子デバイス(表示装置)2により構成される。なお、電子デバイス(表示装置)2は、図23および図24に示した電子ブックと同様の構成を有するPDA(Personal Digital Assistants )などに搭載されてもよい。
図25は、スマートフォン220の外観を表したものである。このスマートフォン220は、例えば、表示部221および非表示部222を有している。表示部221が電子デバイス(表示装置)2により構成されている。
図26は、上記実施の形態の表示装置が適用されるテレビジョン装置230の外観を表したものである。このテレビジョン装置230は、例えば、フロントパネル231およびフィルターガラス232を含む映像表示画面部233を有している。映像表示画面部233が電子デバイス(表示装置)2により構成されている。
図27は、タブレットパーソナルコンピュータ240の外観を表したものである。このタブレットパーソナルコンピュータ240は、例えば、タッチパネル部241および筐体242を有しており、タッチパネル部241が電子デバイス(表示装置)2により構成されている。
図28および図29は、デジタルスチルカメラ250の外観を表したものである。このデジタルスチルカメラ250は、例えば、フラッシュ用の発光部251、表示部252、メニュースイッチ253およびシャッターボタン254を有しており、表示部252が電子デバイス(表示装置)2により構成されている。
図30は、ノートブック型パーソナルコンピュータ260の外観を表したものである。このノートブック型パーソナルコンピュータ260は、例えば、本体261,文字等の入力操作のためのキーボード262および画像を表示する表示部263を有しており、表示部263が電子デバイス(表示装置)2により構成されている。
図31は、ビデオカメラ270の外観を表したものである。このビデオカメラ270は、例えば、本体部271,この本体部271の前方側面に設けられた被写体撮影用のレンズ272,撮影時のスタート/ストップスイッチ273および表示部274を有している。表示部274が電子デバイス(表示装置)2により構成されている。
図32および図33は、他の電子ブック280の外観を表したものである。電子ブック280は、柔らかい素材をコンポーネント化して形成された薄型のフレキシブルディスプレイである。この電子ブック280では、複数枚の紙(頁)を綴じて作られる実際の本のように、装置全体を閉じたり(折り畳んだり)、あるいは開いたりすることができるようになっている。ユーザは実際に本を読んでいるかのような感覚で、電子ブック3に表示された内容(例えば書籍の頁等)を閲覧することが可能である。
図34および図35は、携帯電話機290の外観を表したものである。この携帯電話機290は、例えば、上側筐体291と下側筐体292とを連結部(ヒンジ部)293で連結したものであり、ディスプレイ294,サブディスプレイ295,ピクチャーライト296およびカメラ297を有している。ディスプレイ294またはサブディスプレイ295が電子デバイス(表示装置)2により構成されている。
(1)
素材基板の表面を研磨することと、
前記素材基板の表面を研磨したのちに、前記素材基板の表面に平坦化膜を形成することと
を含む基板の製造方法。
(2)
前記研磨することおよび前記平坦化膜を形成することを、前記素材基板を支持体に貼り付けた状態で行う
前記(1)記載の基板の製造方法。
(3)
前記平坦化膜を、前記素材基板の線膨張係数と同じまたは略同じ線膨張係数をもつ材料により構成する
前記(1)または(2)記載の基板の製造方法。
(4)
前記平坦化膜を、前記素材基板の熱収縮と同じまたは略同じ熱収縮をもつ材料により構成する
前記(1)ないし(3)のいずれかに記載の基板の製造方法。
(5)
前記平坦化膜の厚みを、前記素材基板の厚みよりも薄くする
前記(1)ないし(4)のいずれかに記載の基板の製造方法。
(6)
前記平坦化膜の厚みを、前記素材基板の厚みの5分の1以下とする
前記(5)記載の基板の製造方法。
(7)
前記素材基板の表面を研磨することにおいて、前記素材基板の表面全体を研磨する
前記(1)ないし(6)のいずれかに記載の基板の製造方法。
(8)
前記素材基板の表面を研磨することにおいて、前記素材基板の表面に存在する凸欠陥の高さが前記平坦化膜の厚み以下になるまで研磨する
前記(7)記載の基板の製造方法。
(9)
前記素材基板の表面を研磨することにおいて、前記素材基板の研磨傷の深さを前記平坦化膜の厚み以下とする
前記(8)記載の基板の製造方法。
(10)
前記素材基板を、可撓性をもつ樹脂シートにより構成する
前記(1)ないし(9)のいずれかに記載の基板の製造方法。
(11)
前記平坦化膜として樹脂膜を形成する
前記(1)ないし(10)のいずれかに記載の基板の製造方法。
(12)
前記平坦化膜の表面に、無機膜よりなるバリアコートを形成することを更に含む
前記(1)ないし(11)のいずれかに記載の基板の製造方法。
(13)
前記平坦化膜としてバリアコートを兼ねる無機膜を形成する
前記(1)ないし(10)のいずれかに記載の基板の製造方法。
(14)
基板を形成することと、前記基板に機能部を形成することとを含み、
前記基板を形成することは、
素材基板の表面を研磨することと、
前記素材基板の表面を研磨したのちに、前記素材基板の表面に平坦化膜を形成することと
を含む電子デバイスの製造方法。
(15)
前記研磨することおよび前記平坦化膜を形成することを、前記素材基板を支持体に貼り付けた状態で行う
前記(14)記載の電子デバイスの製造方法。
(16)
前記基板に機能部を形成したのちに、
前記素材基板および前記平坦化膜を含む基板本体を、前記支持体から剥離することと、
前記基板本体を切断してモジュールを形成することと
を更に含む前記(15)記載の電子デバイスの製造方法。
(17)
前記基板に機能部を形成したのちに、
前記基板を切断してモジュールを形成することと、
前記素材基板および前記平坦化膜を含む基板本体を、前記支持体から剥離することと
を更に含む前記(15)記載の電子デバイスの製造方法。
Claims (17)
- 素材基板の表面を研磨することと、
前記素材基板の表面を研磨したのちに、前記素材基板の表面に平坦化膜を形成することと
を含む基板の製造方法。 - 前記研磨することおよび前記平坦化膜を形成することを、前記素材基板を支持体に貼り付けた状態で行う
請求項1記載の基板の製造方法。 - 前記平坦化膜を、前記素材基板の線膨張係数と同じまたは略同じ線膨張係数をもつ材料により構成する
請求項1記載の基板の製造方法。 - 前記平坦化膜を、前記素材基板の熱収縮と同じまたは略同じ熱収縮をもつ材料により構成する
請求項1記載の基板の製造方法。 - 前記平坦化膜の厚みを、前記素材基板の厚みよりも薄くする
請求項1記載の基板の製造方法。 - 前記平坦化膜の厚みを、前記素材基板の厚みの5分の1以下とする
請求項5記載の基板の製造方法。 - 前記素材基板の表面を研磨することにおいて、前記素材基板の表面全体を研磨する
請求項1記載の基板の製造方法。 - 前記素材基板の表面を研磨することにおいて、前記素材基板の表面に存在する凸欠陥の高さが前記平坦化膜の厚み以下になるまで研磨する
請求項7記載の基板の製造方法。 - 前記素材基板の表面を研磨することにおいて、前記素材基板の研磨傷の深さを前記平坦化膜の厚み以下とする
請求項8記載の基板の製造方法。 - 前記素材基板を、可撓性をもつ樹脂シートにより構成する
請求項1記載の基板の製造方法。 - 前記平坦化膜として樹脂膜を形成する
請求項1記載の基板の製造方法。 - 前記平坦化膜の表面に、無機膜よりなるバリアコートを形成することを更に含む
請求項1記載の基板の製造方法。 - 前記平坦化膜としてバリアコートを兼ねる無機膜を形成する
請求項1記載の基板の製造方法。 - 基板を形成することと、前記基板に機能部を形成することとを含み、
前記基板を形成することは、
素材基板の表面を研磨することと、
前記素材基板の表面を研磨したのちに、前記素材基板の表面に平坦化膜を形成することと
を含む電子デバイスの製造方法。 - 前記研磨することおよび前記平坦化膜を形成することを、前記素材基板を支持体に貼り付けた状態で行う
請求項14記載の電子デバイスの製造方法。 - 前記基板に機能部を形成したのちに、
前記素材基板および前記平坦化膜を含む基板本体を、前記支持体から剥離することと、
前記基板本体を切断してモジュールを形成することと
を更に含む請求項15記載の電子デバイスの製造方法。 - 前記基板に機能部を形成したのちに、
前記基板を切断してモジュールを形成することと、
前記素材基板および前記平坦化膜を含む基板本体を、前記支持体から剥離することと
を更に含む請求項15記載の電子デバイスの製造方法。
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JP2015527233A JPWO2015008586A1 (ja) | 2013-07-16 | 2014-06-24 | 基板の製造方法および電子デバイスの製造方法 |
CN201480039155.4A CN105378821B (zh) | 2013-07-16 | 2014-06-24 | 制造衬底的方法和制造电子器件的方法 |
US14/905,115 US9894775B2 (en) | 2013-07-16 | 2014-06-24 | Method of manufacturing substrate and method of manufacturing electronic device |
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JP (1) | JPWO2015008586A1 (ja) |
KR (1) | KR20160032039A (ja) |
CN (1) | CN105378821B (ja) |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6345903B1 (ja) * | 2017-09-13 | 2018-06-20 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイの製造装置 |
WO2019053819A1 (ja) * | 2017-09-13 | 2019-03-21 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイ、その製造方法、およびフレキシブルディスプレイ用支持基板 |
JP2019149378A (ja) * | 2019-04-22 | 2019-09-05 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイ、その製造方法、およびフレキシブルディスプレイ用支持基板 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160080994A (ko) * | 2014-12-30 | 2016-07-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP6487125B1 (ja) * | 2017-06-27 | 2019-03-20 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイおよびその製造方法、ならびにフレキシブルディスプレイ用支持基板 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004335968A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | 電気光学表示装置の製造方法 |
JP2005157324A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 光学フィルムの作製方法 |
JP2005258361A (ja) * | 2004-02-12 | 2005-09-22 | Tohoku Pioneer Corp | パネル基板、表示パネル、有機elパネル及びその製造方法 |
WO2012008166A1 (ja) * | 2010-07-16 | 2012-01-19 | パナソニック株式会社 | 有機el素子の製造方法 |
JP2012104474A (ja) * | 2010-10-15 | 2012-05-31 | Nitto Denko Corp | 有機エレクトロルミネッセンス発光装置およびその製法 |
JP2013067110A (ja) * | 2011-09-22 | 2013-04-18 | Dainippon Printing Co Ltd | ガスバリア性フィルム、ガスバリア層、装置及びガスバリア性フィルムの製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4098032A (en) * | 1975-10-20 | 1978-07-04 | International Business Machines Corporation | Method of forming air bearing rails of head assemblies |
JP2789983B2 (ja) * | 1993-01-28 | 1998-08-27 | 信越半導体株式会社 | 加工誤差補正装置 |
JPH0955362A (ja) * | 1995-08-09 | 1997-02-25 | Cypress Semiconductor Corp | スクラッチを減少する集積回路の製造方法 |
KR100451937B1 (ko) * | 2001-01-31 | 2004-10-22 | 주식회사 엘지 | 전자레인지의 전면시트의 제조방법 및 그것을 부착한전자레인지 |
KR100817134B1 (ko) * | 2002-03-25 | 2008-03-27 | 엘지.필립스 엘시디 주식회사 | 액정 패널의 제조장치 및 방법 |
JP4114551B2 (ja) * | 2003-06-06 | 2008-07-09 | 株式会社豊田自動織機 | 補助電極を用いた面状発光装置 |
CN100489569C (zh) * | 2003-10-28 | 2009-05-20 | 株式会社半导体能源研究所 | 制作光学膜的方法 |
JP4583062B2 (ja) * | 2004-03-31 | 2010-11-17 | 大日本印刷株式会社 | 透明ガス遮断性フィルム、及びその製造方法 |
JP4805587B2 (ja) * | 2005-02-24 | 2011-11-02 | エーユー オプトロニクス コーポレイション | 液晶表示装置とその製造方法 |
US7625783B2 (en) * | 2005-11-23 | 2009-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and method for manufacturing the same |
KR101256013B1 (ko) * | 2006-01-19 | 2013-04-18 | 삼성디스플레이 주식회사 | 액정표시장치의 제조장치 및 제조방법 |
US8740670B2 (en) * | 2006-12-28 | 2014-06-03 | Saint-Gobain Ceramics & Plastics, Inc. | Sapphire substrates and methods of making same |
US7775856B2 (en) * | 2007-09-27 | 2010-08-17 | Applied Materials, Inc. | Method for removal of surface films from reclaim substrates |
KR101493087B1 (ko) * | 2008-05-27 | 2015-02-24 | 엘지디스플레이 주식회사 | 플렉서블 표시장치의 제조 방법 |
KR101280828B1 (ko) | 2008-07-02 | 2013-07-02 | 엘지디스플레이 주식회사 | 기판결함의 수리방법 |
US8455872B2 (en) * | 2008-12-05 | 2013-06-04 | Koninklijke Philips Electronics N.V. | Electronic devices having plastic substrates |
JP2012043583A (ja) * | 2010-08-17 | 2012-03-01 | Sony Corp | 表示装置およびその製造方法 |
JP2013029722A (ja) * | 2011-07-29 | 2013-02-07 | Sony Corp | 表示装置および電子機器 |
-
2014
- 2014-06-12 TW TW103120376A patent/TW201511112A/zh unknown
- 2014-06-24 CN CN201480039155.4A patent/CN105378821B/zh active Active
- 2014-06-24 US US14/905,115 patent/US9894775B2/en active Active
- 2014-06-24 JP JP2015527233A patent/JPWO2015008586A1/ja active Pending
- 2014-06-24 WO PCT/JP2014/066633 patent/WO2015008586A1/ja active Application Filing
- 2014-06-24 KR KR1020157036577A patent/KR20160032039A/ko not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004335968A (ja) * | 2003-05-12 | 2004-11-25 | Sony Corp | 電気光学表示装置の製造方法 |
JP2005157324A (ja) * | 2003-10-28 | 2005-06-16 | Semiconductor Energy Lab Co Ltd | 光学フィルムの作製方法 |
JP2005258361A (ja) * | 2004-02-12 | 2005-09-22 | Tohoku Pioneer Corp | パネル基板、表示パネル、有機elパネル及びその製造方法 |
WO2012008166A1 (ja) * | 2010-07-16 | 2012-01-19 | パナソニック株式会社 | 有機el素子の製造方法 |
JP2012104474A (ja) * | 2010-10-15 | 2012-05-31 | Nitto Denko Corp | 有機エレクトロルミネッセンス発光装置およびその製法 |
JP2013067110A (ja) * | 2011-09-22 | 2013-04-18 | Dainippon Printing Co Ltd | ガスバリア性フィルム、ガスバリア層、装置及びガスバリア性フィルムの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6345903B1 (ja) * | 2017-09-13 | 2018-06-20 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイの製造装置 |
WO2019053819A1 (ja) * | 2017-09-13 | 2019-03-21 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイ、その製造方法、およびフレキシブルディスプレイ用支持基板 |
WO2019053820A1 (ja) * | 2017-09-13 | 2019-03-21 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイの製造装置 |
US10516121B2 (en) | 2017-09-13 | 2019-12-24 | Sakai Display Products Corporation | Apparatus for producing flexible display |
US10991898B2 (en) | 2017-09-13 | 2021-04-27 | Sakai Display Products Corporation | Flexible display, method for manufacturing same, and support substrate for flexible display |
JP2019149378A (ja) * | 2019-04-22 | 2019-09-05 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイ、その製造方法、およびフレキシブルディスプレイ用支持基板 |
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Publication number | Publication date |
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CN105378821B (zh) | 2019-10-25 |
TW201511112A (zh) | 2015-03-16 |
CN105378821A (zh) | 2016-03-02 |
US20160165735A1 (en) | 2016-06-09 |
KR20160032039A (ko) | 2016-03-23 |
US9894775B2 (en) | 2018-02-13 |
JPWO2015008586A1 (ja) | 2017-03-02 |
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