WO2015003467A1 - 阵列基板、光学式触摸屏和显示装置 - Google Patents

阵列基板、光学式触摸屏和显示装置 Download PDF

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Publication number
WO2015003467A1
WO2015003467A1 PCT/CN2013/090267 CN2013090267W WO2015003467A1 WO 2015003467 A1 WO2015003467 A1 WO 2015003467A1 CN 2013090267 W CN2013090267 W CN 2013090267W WO 2015003467 A1 WO2015003467 A1 WO 2015003467A1
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WIPO (PCT)
Prior art keywords
touch
thin film
film transistor
array substrate
photosensitive
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PCT/CN2013/090267
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English (en)
French (fr)
Inventor
杨通
胡明
林炳仟
徐宇博
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合肥京东方光电科技有限公司
京东方科技集团股份有限公司
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Publication of WO2015003467A1 publication Critical patent/WO2015003467A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/0304—Detection arrangements using opto-electronic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving

Definitions

  • the invention belongs to the technical field of touch screens, and particularly relates to an array substrate, an optical touch screen and a display device. Background technique
  • the touch screen is easy to use compared to traditional keyboard and mouse input methods.
  • an external touch screen is currently on the market.
  • the external touch screen is formed by providing a touch device on the optical touch screen.
  • the external touch screen is high in cost and large in thickness, complicated in manufacturing process, and high in cost.
  • the present invention provides an array substrate, an optical touch screen and a display device which can be made lighter, thinner, and can be manufactured with a lower cost.
  • the present invention provides an array substrate, including: a first substrate, a gate line and a data line on the first substrate, wherein the gate line and the data line define more a pixel unit, wherein the pixel unit is formed with a first thin film transistor and a pixel electrode electrically connected to the first thin film transistor, wherein the array substrate further comprises a photosensitive unit, a touch scan line and a touch read The photosensitive unit is connected to the touch scan line and the touch read line, the touch scan line is used to turn on the photosensitive unit, and the touch read line is used to read the current signal generated by the photosensitive unit.
  • the photosensitive unit includes a photosensitive thin film transistor, a gate and a first pole of the photosensitive thin film transistor are connected to the touch read line, and a second pole of the photosensitive thin film transistor is connected to the touch Scan line.
  • a photosensitive thin film transistor formed on the first film Blocking pattern on the transistor.
  • the blocking pattern is an amorphous silicon pattern.
  • three of the pixel units correspond to one of the photosensitive cells.
  • the touch scan line is at least one of the gate lines.
  • the present invention provides an optical touch screen comprising the above array substrate, the optical touch screen further comprising a backlight, wherein the backlight is provided with a detection light source.
  • the detecting light source is an infrared light source.
  • the optical touch screen further includes a color filter substrate, and a filter layer is disposed on a side of the color filter substrate corresponding to the phototransistor.
  • the present invention provides a display device comprising the above optical touch panel.
  • the invention provides an array substrate, an optical touch screen and a display device.
  • the array substrate comprises: a first substrate, a gate line and a data line on the first substrate, and the gate line and the data line define a plurality of a pixel unit, a first thin film transistor and a pixel electrode electrically connected to the first thin film transistor are formed in the pixel unit, the array substrate further includes a photosensitive unit, a touch scan line and a touch read line, and the photosensitive unit is connected to the touch scan line and Touch reading line, the touch scanning line is used to open the photosensitive unit, and the touch reading line is used for reading the current signal generated by the photosensitive unit, which can not only be lighter, thinner, manufacture, and low in cost. Moreover, the aging problem caused by long-term exposure of the thin film transistor to ambient light can be avoided and the power consumption of the array substrate can be reduced.
  • FIG. 1 is a schematic plan view of an array substrate according to a first embodiment of the present invention
  • FIG. 2 is a partial cross-sectional view of the array substrate shown in FIG. 1
  • FIGS. 3) and 3(b) are respectively the first embodiment.
  • FIG. 4 is a schematic diagram showing a layered structure of an array substrate and a color filter substrate in an optical touch panel according to Embodiment 2 of the present invention. detailed description
  • FIG. 1 is a schematic plan view of an array substrate according to a first embodiment of the present invention
  • FIG. 2 is a partial cross-sectional view of the array substrate shown in FIG.
  • the array substrate 11 includes: a first substrate substrate 5, gate lines and data lines on the first substrate substrate 5, and gate lines and data lines define a plurality of pixel units, each A first thin film transistor T1 and a pixel electrode 1 electrically connected to the first thin film transistor T1 are formed in the pixel unit.
  • the array substrate 11 further includes a photosensitive unit 2, a touch scan line X and a touch read line Y, and a photosensitive unit 2
  • the touch scan line X and the touch read line Y are used to turn on the photosensitive unit 2, and the touch read line Y is used to read the current signal generated by the photosensitive unit 2.
  • the first electrode of the first thin film transistor T1 is connected to the data line
  • the gate of the first thin film transistor T1 is connected to the gate line
  • the second electrode of the first thin film transistor T1 is electrically connected to the pixel electrode 1.
  • the external driving circuit supplies a gate driving voltage to the gate line, thereby controlling the opening or closing of the first thin film transistor T1; the external driving circuit supplies a data voltage to the data line, and the data voltage is used to control the first thin film transistor T1. Perform pixel display.
  • the photosensitive unit 2 may include a photosensitive thin film transistor T2.
  • the photosensitive thin film transistor ⁇ 2 is an infrared light sensing thin film transistor.
  • the gate and the first electrode of the photosensitive thin film transistor ⁇ 2 are connected to the touch read line ⁇ , and the second electrode of the photosensitive film transistor ⁇ 2 is connected to the touch scan line X.
  • the touch scan line is at least one of a plurality of gate lines arranged on the array substrate. That is to say, the touch scan line and the gate line can be shared as one line, which can further increase the aperture ratio.
  • the first or second electrode of the first thin film transistor T1 and the photosensitive thin film transistor 2 may be a source or a drain.
  • the first pole can serve as a source, and accordingly, the second pole acts as a drain; or, the first pole can serve as a drain, and accordingly, the second pole acts as a source.
  • the first thin film transistor T1 in order to prevent detection light emitted by the detection light source Reflected on the first thin film transistor T1 (indicated by reference numeral 4 in FIG. 2), thereby affecting the normal stable operation of the first thin film transistor T1.
  • an absorption reflection is formed on the first thin film transistor T1.
  • the barrier pattern 3 is an amorphous silicon pattern.
  • the first thin film transistor T1 is covered with a blocking pattern 3 for absorbing the detection light reflected to the first thin film transistor T1, thereby preventing the first thin film transistor T1 from generating leakage current due to the detection light, thereby preventing the leakage. The picture quality caused by the leakage current is degraded.
  • the detection light can be, for example, infrared light.
  • the barrier pattern 3 is an amorphous silicon pattern. Since the forbidden band width of amorphous silicon is about 1.2 eV, which is close to the photon energy of infrared rays, it can absorb infrared light, and the photon is absorbed after the infrared light is absorbed. The electrons of the amorphous silicon are excited to the conduction band to improve the conductivity of the amorphous silicon, so that the first thin film transistor T1 is covered with a barrier pattern 3, which can absorb the infrared light reflected thereon, thereby preventing the infrared The effect of light on the electrical properties of amorphous silicon in the first thin film transistor T1. Further, a lower polarizer 6 is further provided on the outer side of the first base substrate 5.
  • one photosensitive unit 2 is provided for three pixel units. That is to say, each of the three pixel units corresponds to one photosensitive unit 2, and the photosensitive unit 2 can occupy less space for performing pixel display, thereby increasing the aperture ratio and further improving the picture display quality.
  • the array substrate 11 further includes an amplifier 13.
  • FIG. 3 is a timing chart of the operation of the touch scan line and the touch read line in the first embodiment
  • FIG. 3 (b) shows the touch scan line and touch read in the first embodiment. Take the working timing diagram of the line.
  • FIG. 3 ) and FIG. 3 ( b ) illustrate the touch sensing of the nth row of touch scan lines and the nth column of touch read lines.
  • VX ( n-1 ) and VX ( n ) are shown.
  • VX ( n+1 ) represents the signals of the n-1th row, the nth row, and the n+1th row of the touch scan lines
  • IY ( m ) represents the signal waveform of the mth column touch read line.
  • the signal waveform IY(m) read on the touch read line is as shown in the stage t1 to t2 in Fig. 3(b), thereby judging the touch point. Coordinates; When the touch scan line is at a low potential, the detection current is not detected on the touch read line regardless of whether or not infrared light is incident on the photosensitive thin film transistor.
  • the array substrate includes a photosensitive unit, a touch scan line and a touch read line, and the photosensitive unit is connected to the touch scan line and the touch read line, and the touch scan line is used for The photosensitive unit is turned on, and the touch reading line is used for reading the generated current signal of the photosensitive unit.
  • the technical solution of the embodiment avoids the aging problem caused by the long-term exposure of the photosensitive thin film transistor to ambient light and reduces the work of the array substrate. Consumption.
  • Embodiment 2 of the present invention provides an optical touch screen including an array substrate and a backlight, and a detection light source is disposed in the backlight.
  • the optical touch screen further comprises a color film substrate disposed opposite to the array substrate, and a color filter substrate is disposed on the side of the array substrate corresponding to the position of the photosensitive thin film transistor with a filter layer.
  • the filter layer is used to filter out part of the natural light and pass the infrared light, thereby reducing the influence of external natural light on the photosensitive thin film transistor.
  • the filter layer may be a color matrix pattern, and the color matrix pattern includes any two combinations of three matrix patterns: a red matrix pattern, a green matrix pattern, and a blue matrix pattern.
  • the filter layer may also be other optical devices having a portion of the natural light filtering through the infrared light.
  • the optical touch panel includes an array substrate 11 and a color filter substrate 10 disposed opposite to each other, and an array substrate.
  • 11 includes: a photosensitive thin film transistor 12, a lower polarizer 6 located under the first substrate substrate 5;
  • the color filter substrate 10 includes: a second substrate substrate 8, an upper polarizer 7 located above the second substrate substrate 8, forming A filter layer 9 on the second substrate substrate 8.
  • the inside of the color filter substrate 10 corresponds to the photosensitive thin film transistor 12
  • the filter layer 9 is provided at the position.
  • the filter layer 9 is for filtering out part of the natural light to pass the infrared light, thereby reducing the influence of the external natural light on the photosensitive thin film transistor T2.
  • the filter layer 9 may be a color matrix pattern, and the color matrix pattern includes any two combinations of three matrix patterns: a red matrix pattern, a green matrix pattern, and a blue matrix pattern.
  • the filter layer 9 may also be another optical film layer that has a portion of the natural light filtered out and only passes the infrared light.
  • the photosensitive thin film transistor 12 is an infrared light sensing thin film transistor
  • the detecting light source is an infrared light source.
  • an infrared light source that provides detection light can be provided by providing a red light emitting diode in the backlight.
  • the detection light may be, for example, infrared light.
  • the infrared light can be reflected on the photosensitive unit, specifically reflected onto the photosensitive thin film transistor, so that the touch can be detected through the touch scan line and the touch read line.
  • the array substrate 11 includes a barrier pattern 3, which is an amorphous silicon pattern.
  • the forbidden band width of amorphous silicon is about 1.2 eV, which is close to the photon energy of infrared rays, it can absorb infrared light. After absorbing the infrared light, the photon excites the electrons of the amorphous silicon to the conduction band to improve the conductivity of the amorphous silicon. Therefore, the first thin film transistor T1 is covered with a barrier pattern 3, which can reflect the infrared light reflected thereon. Absorbing, thereby preventing the influence of infrared light on the electrical properties of the amorphous silicon in the first thin film transistor T1.
  • An optical touch screen provided in this embodiment includes a backlight, an array substrate, and a color filter substrate.
  • the backlight is provided with a detection light source, and the detection light source provides infrared light.
  • the inner side of the color film substrate corresponding to the photosensitive thin film transistor is provided with a filter layer.
  • the optical touch screen of the embodiment avoids the long-term exposure of the optical touch screen to ambient light. The aging problem and the reduced power consumption of the optical touch screen.
  • Embodiment 3 of the present invention provides a display device using the optical touch screen described in Embodiment 2 above.
  • the display device provided in this embodiment adopts the optical touch screen of the second embodiment, the optical touch screen includes a backlight, an array substrate, and a color filter substrate, wherein the backlight is provided with a detection light source, and the detection light source provides infrared light, and the color film A filter layer is disposed on the inner side of the substrate corresponding to the photosensitive thin film transistor, which can effectively solve the aging problem caused by the long-term exposure of the display device to ambient light and reduce the power consumption of the display device.

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  • Theoretical Computer Science (AREA)
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Abstract

本发明提供阵列基板、光学式触摸屏和显示装置，该阵列基板包括：第一衬底基板、位于所述第一衬底基板上的栅线和数据线，所述栅线和所述数据线限定出多个像素单元，所述像素单元内形成有第一薄膜晶体管和与所述第一薄膜晶体管电连接的像素电极，其特征在于，所述阵列基板还包含感光单元，触控扫描线和触控读取线，所述感光单元连接所述触控扫描线和触控读取线，所述触控读取线用于读取感光单元产生的电流信号，所述触控扫描线用于开启感光单元。本发明的技术方案避免了感光薄膜晶体管长期暴露在环境光下而产生的老化问题以及降低了阵列基板的功耗。

Description

阵列基板、 光学式触摸屏和显示装置 技术领域
本发明属于触摸屏技术领域， 具体涉及阵列基板、 光学式触 摸屏和显示装置。 背景技术
触摸屏作为一种新的输入设备， 与传统的键盘和鼠标输入方 式相比具有良好的易用性。 随着触摸技术的发展， 目前市场上流 行的是外置型触摸屏。 外置型触摸屏是在光学式触摸屏上面设置 一个触摸装置而形成， 外置型触摸屏成本高且厚度较大， 制造工 艺复杂， 并且成本较高。
因此， 期望提供一种新型的光学式触摸屏， 使其相对于其他 类型的触摸屏可以做到更轻、 更薄， 而且减少制造工序， 从而可 以降低成本， 实现触控和显示的合二为一。 发明内容
本发明提供了一种阵列基板、 一种光学式触摸屏和一种显示 装置， 其可以做到更轻、 更薄、 制造筒单、 成本低。
为实现上述目的， 本发明提供了一种阵列基板， 包括： 第一 衬底基板、 位于所述第一衬底基板上的栅线和数据线， 所述栅线 和所述数据线限定出多个像素单元， 所述像素单元内形成有第一 薄膜晶体管和与所述第一薄膜晶体管电连接的像素电极， 其特征 在于， 所述阵列基板还包含感光单元， 触控扫描线和触控读取线, 所述感光单元连接所述触控扫描线和触控读取线， 所述触控扫描 线用于开启感光单元， 所述触控读取线用于读取感光单元产生的 电流信号。
可选地， 所述感光单元包括感光薄膜晶体管， 所述感光薄膜 晶体管的栅极和第一极连接于所述触控读取线， 所述感光薄膜晶 体管的第二极连接于所述触控扫描线。 可选地， 形成在第一薄膜 晶体管上的阻挡图形。
可选地， 所述阻挡图形为非晶硅图形。
可选地， 三个所述像素单元对应一个所述感光单元。
可选地， 所述触控扫描线为所述栅线中的至少一条。
为实现上述目的， 本发明提供一种光学式触摸屏， 包括上述 的阵列基板， 所述光学式触摸屏还包括背光源， 所述背光源中设 置有检测光源。
可选地， 所述检测光源为红外光源。
可选地， 所述光学式触摸屏还包括彩膜基板， 所述彩膜基板 内侧对应所述感光晶体管的位置设置有滤光层。
为实现上述目的， 本发明提供一种显示装置， 包括上述的光 学式触摸屏。
本发明提供的一种阵列基板、 光学式触摸屏和显示装置， 该 阵列基板包括： 第一衬底基板、 位于第一衬底基板上的栅线和数 据线， 栅线和数据线限定出多个像素单元， 像素单元内形成有第 一薄膜晶体管和与第一薄膜晶体管电连接的像素电极， 阵列基板 还包含感光单元， 触控扫描线和触控读取线， 感光单元连接触控 扫描线和触控读取线， 触控扫描线用于开启感光单元， 触控读取 线用于读取感光单元的产生的电流信号， 其不仅可以做到更轻、 更薄、 制造筒单、 成本低， 而且可以避免薄膜晶体管长期暴露在 环境光下而产生的老化问题以及降低了阵列基板的功耗。 附图说明
图 1为本发明实施例一提供的一种阵列基板的平面示意图； 图 2为图 1所示的阵列基板的局部结构剖面示意图； 图 3 )和 3 ( b )分别为本实施例一中无触摸和有触摸时触 控扫描线和触控读取线的工作时序图； 以及
图 4为本发明实施例二中光学式触摸屏中的阵列基板和彩膜 基板的分层结构示意图。 具体实施方式
为使本领域技术人员更好地理解本发明的技术方案， 下面结 合附图和具体实施方式对本发明提供的阵列基板、 光学式触摸屏 和显示装置作进一步详细描述。
图 1为本发明实施例一提供的一种阵列基板的平面示意图， 以及图 2为图 1所示的阵列基板的局部结构剖面示意图。 如图 1 和图 2所示， 阵列基板 11包括： 第一衬底基板 5、 位于第一衬底 基板 5上的栅线和数据线， 栅线和数据线限定出多个像素单元， 每个像素单元内形成有第一薄膜晶体管 T1和与第一薄膜晶体管 T1电连接的像素电极 1 , 阵列基板 11还包括感光单元 2, 触控扫 描线 X和触控读取线 Y, 感光单元 2连接触控扫描线 X和触控读 取线 Y, 触控扫描线 X用于开启感光单元 2, 触控读取线 Y用于 读取感光单元 2产生的电流信号。
具体地， 第一薄膜晶体管 T1的第一极和数据线连接， 第一薄 膜晶体管 T1的栅极与栅线连接， 第一薄膜晶体管 T1的第二极与 像素电极 1电连接。 在实际应用中， 外部驱动电路向栅线提供栅 极驱动电压， 从而控制第一薄膜晶体管 T1的开启或者关闭； 外部 驱动电路向数据线提供数据电压， 该数据电压用于控制第一薄膜 晶体管 T1进行像素显示。
具体地， 如图 1所示， 感光单元 2可以包括感光薄膜晶体管 T2。优选地，感光薄膜晶体管 Τ2为红外光感应薄膜晶体管。其中， 感光薄膜晶体管 Τ2的栅极和第一极连接于触控读取线 Υ,感光薄 膜晶体管 Τ2的第二极连接于触控扫描线 X。 优选地， 触控扫描线 为阵列基板上布置的多条栅线中的至少一条。 也就是说， 触控扫 描线和栅线可以作为一条线共用， 这样可以进一步提高开口率。
需要说明的是， 本发明中， 第一薄膜晶体管 T1和感光薄膜晶 体管 Τ2的第一极或第二极可以为源极或者漏极。 实际应用时， 第 一极可作为源极， 则相应地， 第二极作为漏极； 或者， 第一极可 作为漏极， 则相应地， 第二极作为源极。
优选地， 在该实施例中， 为了防止由检测光源发射的检测光 反射到第一薄膜晶体管 T1 (图 2中以标号 4表示）上， 从而影响 第一薄膜晶体管 T1的正常稳定工作， 如图 2所示， 在第一薄膜晶 体管 T1上形成有吸收反射到第一薄膜晶体管 T1上的检测光的阻 挡图形 3。 具体地， 该阻挡图形 3为非晶硅图形。 在第一薄膜晶体 管 T1上面覆盖一层阻挡图形 3 , 该阻挡图形 3用于吸收反射到第 一薄膜晶体管 T1的检测光， 避免了第一薄膜晶体管 T1由于检测 光而产生漏电流， 从而防止了由漏电流引起的画面品质下降。 在 实际应用中， 检测光例如可以为红外光。 本实施例中， 该阻挡图 形 3为非晶硅图形， 由于非晶硅的禁带宽度在 1.2电子伏左右， 与 红外线的光子能量接近， 因此其能够吸收红外光， 在吸收了红外 光后光子将非晶硅的电子激发到导带， 以提高非晶硅的导电性能， 因此在第一薄膜晶体管 T1上覆盖一层阻挡图形 3, 可以将反射到 其上的红外光吸收，从而防止了红外光对第一薄膜晶体管 T1中非 晶硅的电学性能的影响。 此外， 在第一衬底基板 5的外侧还设置 有下偏光片 6。
本实施例中， 优选地， 针对三个像素单元设置一个感光单元 2。 也就是说， 每三个像素单元对应一个感光单元 2, 感光单元 2 可以较少占用用于进行像素显示的空间， 从而提高开口率， 进一 步提高画面显示质量。 进一步地， 阵列基板 11还包括放大器 13。 图 3 ) 为本实施例一中无触摸时触控扫描线和触控读取线的工 作时序图， 而图 3 ( b ) 为本实施例一中有触摸时触控扫描线和触 控读取线的工作时序图。 图 3 )和图 3 ( b )是以第 n行触控扫 描线和第 n列触控读取线发生触控为例进行说明的， 图中， VX ( n-1 ) 、 VX ( n ) 、 VX ( n+1 )分别表示第 n-1行、 第 n行以及 第 n+1行触控扫描线的信号， IY ( m )表示第 m列触控读取线的 信号波形。 具体地， 当无触摸发生时， 即没有红外光照射到感光 薄膜晶体管 T2上时， 如图 3 ( a ) 中 tl到 t2阶段所示， 触控扫描 线处在高电位时， 此时感光晶体管 T2上的漏电流很小， 因此触控 读取线上读取到的信号波形 IY ( m )如图 3 ) 中 tl到 t2阶段 所示； 当有触摸发生时， 即有红外光通过手指反射到感光薄膜晶 体管上时， 如图 3 ( b )中 tl到 t2阶段所示， 触控扫描线处在高电 位时， 此时感光薄膜晶体管上会产生大量的光生载流子， 产生检 测电流， 检测电流经过放大器 13放大后交给处理器分析， 因此触 控读取线上读取到的信号波形 IY ( m )如图 3 ( b ) 中 tl到 t2阶 段所示， 由此可以判断出触摸点的坐标； 当触控扫描线处在低电 位时， 此时无论有没有红外光照射在感光薄膜晶体管上， 触控读 取线上都不会检测到检测电流。
本实施例提供的阵列基板的技术方案中， 该阵列基板包含感 光单元， 触控扫描线和触控读取线， 感光单元连接触控扫描线和 触控读取线， 触控扫描线用于开启感光单元， 触控读取线用于读 取感光单元的产生的电流信号， 本实施例的技术方案避免了感光 薄膜晶体管长期暴露在环境光下而产生的老化问题以及降低了阵 列基板的功耗。
本发明实施例二提供一种光学式触摸屏， 包括阵列基板和背 光源， 背光源中设置有检测光源。
优选地， 光学式触摸屏还包括与阵列基板相对设置的彩膜基 板， 彩膜基板朝向阵列基板的一侧对应感光薄膜晶体管的位置设 置有滤光层。 滤光层用于滤除部分自然光， 使红外光通过， 从而 减小外界自然光对感光薄膜晶体管的影响。 在实际应用中， 优选 地， 滤光层可以为彩色矩阵图形， 彩色矩阵图形包括红色矩阵图 形、绿色矩阵图形和蓝色矩阵图形三种矩阵图形中任意两种组合。 当然， 该滤光层也可以为其他具有滤除部分自然光使红外光通过 的光学器件。
图 4为本发明实施例二中光学式触摸屏中的阵列基板和彩膜 基板的分层结构示意图， 如图 4所示， 光学式触摸屏包括相对设 置的阵列基板 11和彩膜基板 10, 阵列基板 11包括： 感光薄膜晶 体管 12、 位于第一衬底基板 5下方的下偏光片 6; 彩膜基板 10包 括： 第二衬底基板 8、 位于第二衬底基板 8上方的上偏光片 7、 形 成于第二衬底基板 8上的滤光层 9。
本实施例中， 彩膜基板 10内侧对应于感光薄膜晶体管 12的 位置设置有滤光层 9。 滤光层 9用于滤除部分自然光，使红外光通 过， 从而减小外界自然光对感光薄膜晶体管 T2的影响。 在实际应 用中， 优选地， 滤光层 9可以为彩色矩阵图形， 彩色矩阵图形包 括红色矩阵图形、 绿色矩阵图形和蓝色矩阵图形三种矩阵图形中 任意两种组合。 当然， 该滤光层 9也可以为其他具有滤除部分自 然光而只使红外光通过的光学膜层。
优选地， 感光薄膜晶体管 12为红外光感应薄膜晶体管， 检测 光源为红外光源。 具体地， 可通过在背光源中设置红发发光二极 管作为提供检测光的红外光源。 在实际应用中， 检测光例如可以 为红外光。 当手指触控该光学式触摸屏时， 可以将红外光反射到 感光单元上， 具体的是反射到感光薄膜晶体管上， 这样通过触控 扫描线和触控读取线就可以检测到触控发生的具***置。 本实施 例中， 阵列基板 11包括阻挡图形 3, 该阻挡图形 3为非晶硅图形， 由于非晶硅的禁带宽度在 1.2电子伏左右，与红外线的光子能量接 近， 因此能够吸收红外光， 在吸收红外光后光子把非晶硅的电子 激发到导带， 以提高非晶硅的导电性能， 因此在第一薄膜晶体管 T1上覆盖一层阻挡图形 3, 可以把反射到其上的红外光吸收， 从 而防止红外光对第一薄膜晶体管 T1中非晶硅的电学性能的影响。
当无触摸发生时，即没有红外光照射到感光薄膜晶体管 12上 时， 且触控扫描线处在高电位时， 此时感光晶体管上的漏电流很 小， 当有触摸发生时， 即有红外光反射到感光薄膜晶体管上时， 且触控扫描线处在高电位时， 此时感光薄膜晶体管 12上会产生大 量的光生载流子， 产生检测电流， 检测电流经过放大器放大后交 给处理器分析， 由此可以判断出触摸点的坐标； 而当触控扫描线 处在低电位时， 此时无论有没有红外光照射在感光薄膜晶体管 12 上， 触控读取线上都不会产生检测电流。
本实施例提供的一种光学式触摸屏包括背光源、 阵列基板和 彩膜基板， 背光源中设置有检测光源， 检测光源提供红外光， 彩 膜基板内侧对应感光薄膜晶体管的位置设置有滤光层， 本实施例 的光学式触摸屏避免了光学式触摸屏长期暴露在环境光下而产生 的老化问题以及降低了光学式触摸屏的功耗。
本发明实施例三提供一种显示装置， 该显示装置采用上述实 施例二中所述的光学式触摸屏。
本实施例提供的显示装置， 通过采用实施例二中的光学式触 摸屏， 该光学式触摸屏包括背光源、 阵列基板和彩膜基板， 背光 源中设置有检测光源， 检测光源提供红外光， 彩膜基板内侧对应 感光薄膜晶体管的位置设置有滤光层， 其可以有效解决由于显示 装置长期暴露在环境光下而产生的老化问题以及降低了显示装置 的功耗。
可以理解的是， 以上实施方式仅仅是为了说明本发明的原理 而采用的示例性实施方式， 然而本发明并不局限于此。 对于本领 域内的普通技术人员而言， 在不脱离本发明的精神和实质的情况 下， 可以做出各种变型和改进， 这些变型和改进也视为本发明的 保护范围。

Claims

权利要求书
1、 一种阵列基板， 包括： 第一衬底基板、 位于所述第一衬底 基板上的栅线和数据线， 所述栅线和所述数据线限定出多个像素 单元， 所述像素单元内形成有第一薄膜晶体管和与所述第一薄膜 晶体管电连接的像素电极， 其特征在于， 所述阵列基板还包含感 光单元， 触控扫描线和触控读取线， 所述感光单元连接所述触控 扫描线和触控读取线， 所述触控读取线用于读取感光单元产生的 电流信号， 所述触控扫描线用于开启感光单元。
2、 根据权利要求 1所述的阵列基板， 其特征在于， 所述感光 单元包括感光薄膜晶体管， 所述感光薄膜晶体管的栅极和第一极 连接于所述触控读取线， 所述感光薄膜晶体管的第二极连接于所 述触控扫描线。
3、 根据权利要求 1所述的阵列基板， 其特征在于， 还包括： 形成在第一薄膜晶体管上的阻挡图形。
4、 根据权利要求 3所述的阵列基板， 其特征在于， 所述阻挡 图形为非晶硅图形。
5、 根据权利要求 1所述的阵列基板， 其特征在于， 三个所述 像素单元对应一个所述感光单元。
6、 根据权利要求 1所述的阵列基板， 其特征在于， 所述触控 扫描线为所述栅线中的至少一条。
7、 一种光学式触摸屏， 其特征在于， 包括权利要求 1至 6任 一项所述的阵列基板， 所述光学式触摸屏还包括背光源， 所述背 光源中设置有检测光源。
8、 根据权利要求 7所述的光学式触摸屏， 其特征在于， 所述 检测光源为红外光源。
9、 根据权利要求 7所述的光学式触摸屏， 其特征在于， 所述 光学式触摸屏还包括彩膜基板， 所述彩膜基板内侧对应所述感光 晶体管的位置设置有滤光层。
10、 一种显示装置， 其特征在于， 包括权利要求 7至 10任一 所述的光学式触摸屏。
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