WO2014200312A1 - 유기태양전지 및 이의 제조방법 - Google Patents
유기태양전지 및 이의 제조방법 Download PDFInfo
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- WO2014200312A1 WO2014200312A1 PCT/KR2014/005225 KR2014005225W WO2014200312A1 WO 2014200312 A1 WO2014200312 A1 WO 2014200312A1 KR 2014005225 W KR2014005225 W KR 2014005225W WO 2014200312 A1 WO2014200312 A1 WO 2014200312A1
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- Prior art keywords
- electrode
- layer
- solar cell
- organic solar
- auxiliary electrode
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- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present specification relates to an organic solar cell and a method of manufacturing the same.
- Solar cells are semiconductor devices that convert sunlight into electricity using a photovoltaic effect.
- Solar cells using inorganic semiconductor materials such as silicon or compound semiconductors are already commercially available.
- organic solar cells using organic materials such as polymer resins have also been studied.
- the light conversion efficiency of an organic solar cell converts incident light into electrical energy.
- the incident light excites an organic material in the photoactive layer to form an exciton in which electrons and holes are unstablely coupled. It refers to the efficiency in which electrons and holes move to the electrode through the donor layer and the accept layer, respectively, and are converted to electrical energy.
- an organic solar cell material it can be roughly divided into a p-type organic semiconductor material which is a donor and an n- type organic semiconductor material which is an acceptor.
- the p-type organic semiconductor material is separated into holes and electrons at the junction with the n-type organic semiconductor material when the excitons generated by the absorption of light are formed to provide electrons well. It is a donor to be.
- the n-type organic semiconductor material refers to a material that can be reduced to an acceptor to accept electrons well.
- Various donor and acceptor materials have been reported, but it is difficult to expect an efficiency of 3% or more except for P3HT / PCBM or PCPDTBT / PCBM.
- organic solar cells have lower efficiency than inorganic solar cells.
- charge mobility compared to inorganic solar cells.
- the charge recombination decreases and the electric field decreases, thereby increasing the recombination of charges, thereby improving efficiency.
- the efficiency drop caused by an increase in the resistance of the transparent electrode is large.
- an optical module, metal nanoparticles, and the like, or a new module structure for minimizing electrode resistance has been proposed.
- the present specification provides an organic solar cell and a method of manufacturing the same that can increase light conversion efficiency.
- first electrode A first electrode; A second electrode provided to face the first electrode; One or more organic material layers including a photoactive layer provided between the first electrode and the second electrode; And an auxiliary electrode provided in contact with the first electrode.
- the auxiliary electrode provides an organic solar cell in which the area of the surface close to the first or second electrode to which the incident light reaches is smaller than the area of the surface opposite thereto.
- the present disclosure provides a method of manufacturing the organic solar cell. Specifically, preparing a substrate; Forming a first electrode on the substrate; Forming an auxiliary electrode on the first electrode; Forming at least one organic material layer including a photoactive layer on the auxiliary electrode; And forming a second electrode on the organic material layer, wherein the areas of the upper and lower surfaces of the auxiliary electrode are different from each other.
- the organic solar cell of the present specification has a high light absorption efficiency by increasing the amount of light reaching the photoactive layer.
- the organic solar cell of the present specification enables reabsorption of light, and thus has high light absorption efficiency.
- the organic solar cell of the present specification can implement a high charge rate when manufacturing a large area device by lowering the resistance of the electrode.
- 1 to 3 illustrate the shape of the auxiliary electrode in the organic solar cell according to the exemplary embodiment of the present specification.
- FIG. 6 illustrates a method of manufacturing an organic solar cell according to one embodiment of the present specification.
- FIG. 7 is an optical micrograph immediately after PR patterning by the method of Preparation Example 1.
- FIG. 8 is a SEM cross-sectional photograph immediately after PR patterning and Cu / Al etching by the method of Preparation Example 1.
- FIG. 8 is a SEM cross-sectional photograph immediately after PR patterning and Cu / Al etching by the method of Preparation Example 1.
- One embodiment of the present specification includes a first electrode; A second electrode provided to face the first electrode; One or more organic material layers including a photoactive layer provided between the first electrode and the second electrode; And an auxiliary electrode provided in contact with the first electrode.
- the auxiliary electrode provides an organic solar cell in which the area of the surface close to the first or second electrode to which the incident light reaches is smaller than the area of the surface opposite thereto.
- the present inventors developed an organic solar cell capable of increasing the light absorption efficiency by introducing an auxiliary electrode and adjusting the shape of the auxiliary electrode to solve the resistance value of the high transparent electrode.
- the first electrode of the organic solar cell may be a transparent electrode for light absorption.
- the transparent electrode has a high transmittance but low electrical conductivity. Therefore, according to the exemplary embodiment of the present specification, an auxiliary electrode having high conductivity may be used on the transparent electrode to compensate for the low electrical conductivity of the transparent electrode.
- the auxiliary electrode may be made of a metal material for high electrical conductivity, so that the area of the surface close to the electrode reaching the incident light may be reduced in order to reduce the problem that light transmittance is impaired. It can form smaller than the area of the opposing surface.
- the auxiliary electrode may have an area smaller than that of an opposing surface that is in contact with the first electrode.
- the first electrode may be a transparent electrode, and may mean a case where light is incident on the transparent electrode.
- FIG. 1 illustrates a shape of an auxiliary electrode in an organic solar cell according to an exemplary embodiment of the present specification.
- FIG. 1 illustrates the auxiliary electrode 301 provided on the first electrode 201 provided on the substrate 101. 1 shows a cross section in the case where an auxiliary electrode is formed on a first electrode made of ITO, and light is transmitted.
- an arrow means incident light.
- FIG. 1 since the area of the auxiliary electrode where light is incident is small, more light may pass through the first electrode, and the incident light may be reflected on the side of the auxiliary electrode to be reabsorbed by the photoactive layer. I can see.
- FIG. 1 illustrates only the effect when light is incident on the first electrode in the vertical direction, the same effect may also be obtained when light is incident on the incident direction instead of vertically.
- light that is not absorbed by the photoactive layer and reflected from the second electrode may be reflected back by the auxiliary electrode to be absorbed by the photoactive layer.
- FIG. 4 illustrates an example of an organic solar cell according to an exemplary embodiment of the present specification. Specifically, FIG. 4 illustrates an organic solar system in which a first electrode 201, an auxiliary electrode 301, a hole transport layer 401, a photoactive layer 501, and a second electrode 501 are sequentially provided on a substrate 101. The battery is shown. 4 shows the shape of the cross section of the auxiliary electrode when light is incident on the first electrode.
- the auxiliary electrode in the organic solar cell, incident light reaches the second electrode, and the auxiliary electrode may have a larger area than an opposite surface of the surface in contact with the first electrode.
- This may be an organic solar cell having a reverse structure in which the second electrode is a transparent electrode. That is, when light is incident on the second electrode of the organic solar cell, the auxiliary electrode may have a larger area of the surface in contact with the first electrode than an area of the surface opposite thereto. In this case, excess light that is not absorbed by the photoactive layer through the second electrode may be reflected and reabsorbed by the auxiliary electrode. Specifically, the amount of light exiting to the first electrode due to the auxiliary electrode may be reduced, and light may be absorbed again to increase light absorption efficiency.
- FIG. 5 illustrates an example of an organic solar cell according to an exemplary embodiment of the present specification.
- FIG. 5 illustrates an organic solar system in which a first electrode 201, an auxiliary electrode 301, a hole transport layer 401, a photoactive layer 501, and a second electrode 501 are sequentially provided on a substrate 101.
- the battery is shown.
- 5 illustrates the shape of a cross section of the auxiliary electrode when light is incident on the second electrode. That is, in FIG. 5, the area where the light is reflected by the auxiliary electrode is larger than the area where the extra light passing through the second electrode and the photoactive layer passes through the first electrode, and thus the extra light reflected by the auxiliary electrode. It can be reabsorbed into the photoactive layer.
- the organic solar cell direct light is incident on the second electrode, and extra light that is not absorbed by the photoactive layer is reflected by the auxiliary electrode provided on the first electrode and is photoactive. May be reabsorbed into the layer. In this case, since the reflected light, which is less efficient in light, may be absorbed auxiliary, the efficiency of the organic solar cell may be further increased.
- the vertical cross section of the auxiliary electrode may be a trapezoidal shape.
- the vertical cross section means a cross section perpendicular to the wide surface of the first electrode as the horizontal plane.
- the ratio of the line widths of the upper and lower surfaces of the auxiliary electrode may be 1: 1.3 to 1: 2, or 1.3: 1 to 3: 1.
- the "lower surface” may mean one surface of the auxiliary electrode that is closest to the first or second electrode to which the incident light reaches, and the “upper surface” may mean one surface of the auxiliary electrode opposite to the “lower surface” of the auxiliary electrode. It may mean. Alternatively, the “lower surface” may mean one surface of the auxiliary electrode positioned closest to the first electrode.
- the auxiliary electrode may be a metal electrode.
- the auxiliary electrode may generally use all metals. Specifically, it may include aluminum, copper, and / or silver having good conductivity.
- the auxiliary electrode may use a molybdenum / aluminum / molybdenum layer when aluminum is used for adhesion to the transparent electrode and stability in a photo process. More specifically, the auxiliary electrode may include silver.
- the auxiliary electrode may be provided in a mesh structure.
- the mesh structure may be a mesh structure, and the mesh may have a polygonal shape including a triangle, a quadrangle, and a honeycomb.
- the auxiliary electrode may be formed of two or more layers.
- each layer of the auxiliary electrode may have an area of a surface close to the first or second electrode to which incident light reaches is smaller than an area of the surface opposite thereto.
- the two or more auxiliary electrodes may have an area of a surface closest to the first or second electrode to which incident light reaches is smaller than an area of a surface farthest away from the second or second electrode.
- FIGS. 2 and 3 illustrate the shape of the auxiliary electrode in the organic solar cell according to the exemplary embodiment of the present specification.
- FIG. 2 illustrates the auxiliary electrode 301 provided on the first electrode 201 provided on the substrate 101.
- FIG. 2 illustrates an auxiliary electrode composed of two layers when light is incident on the first electrode ITO. That is, when the auxiliary electrode is formed as shown in Figure 2, the amount of light can be incident through the first electrode increases, and the incident light is reflected, it is possible to reabsorb the light.
- FIG. 3 illustrates the auxiliary electrode 301 provided on the first electrode 201 provided on the substrate 101.
- FIG. 3 may increase the incident amount of light when entering the first electrode ITO, and may reabsorb due to reflection of the incident light.
- FIG. 3 even when light is incident on the second electrode, similarly, a large amount of light may be reflected and reabsorbed.
- the vertical cross section of each layer of the auxiliary electrode may be independently square, rectangular or trapezoidal.
- each layer of the auxiliary electrode may be composed of different materials.
- the auxiliary electrode in contact with the first electrode may be formed of copper, and the auxiliary electrode stacked thereon may be formed of silver.
- the first or second electrode reaching the incident light may be a transparent electrode.
- the first electrode may be a transparent electrode.
- both the first and second electrodes may be transparent electrodes.
- transparent may mean that transmittance of visible light is 30% or more. Specifically, “transparent” in this specification may mean that transmittance of visible light is 50% or more.
- the first electrode may be a transparent electrode
- the second electrode may be a metal electrode
- the second electrode may be a metal electrode of 1 nm or more and 20 nm or less, and may be a transparent metal electrode.
- the organic solar cell may further include a substrate, and the first electrode may be provided on the substrate.
- the substrate according to the present disclosure may be a glass substrate or a transparent plastic substrate having excellent transparency, surface smoothness, ease of handling, and waterproofness, or a substrate having a light extraction layer formed therein, but is not limited thereto.
- the substrate used is not limited.
- the transparent electrode may be a transparent and excellent conductive material, but is not limited thereto.
- Metals such as vanadium, chromium, copper, zinc and gold or alloys thereof;
- Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); ZnO: Al or SNO 2 : combination of a metal and an oxide such as Sb;
- Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline, and the like, but are not limited thereto.
- the transparent electrode may be a metal oxide / metal / metal oxide such as MOO 3 / Ag / MoO 3 , graphene, carbon nanotubes, metal nanoparticles and metal wires, metal meshes, and the like. It may comprise two or more complexes of.
- the transparent electrode may be a transparent conductive oxide layer.
- the transparent conductive oxide layer is in addition to glass and quartz plate, polyethylene terephthalate (PET), polyethylene naphthelate (PEN), polyperopylene (PP), polyimide (PI), polycarbornate (PC), polystyrene (PS), polyoxyethlene (POM) Doped with a conductive material on a flexible and transparent substrate such as a plastic, including an AS resin (acrylonitrile styrene copolymer), ABS resin (acrylonitrile butadiene styrene copolymer), triacetyl cellulose (TAC), and polyarylate (PAR).
- AS resin acrylonitrile styrene copolymer
- ABS resin acrylonitrile butadiene styrene copolymer
- TAC triacetyl cellulose
- PAR polyarylate
- the transparent conductive oxide layer is indium tin oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), indium zinc oxide (IZO), ZnO-Ga 2 O 3 , ZnO-Al 2 O 3, antimony tin oxide (ATO), and the like, and more specifically, ITO.
- the method of forming the transparent electrode is not particularly limited, but is applied to one surface of the substrate or coated in a film form using, for example, sputtering, E-beam, thermal evaporation, spin coating, screen printing, ink jet printing, doctor blade or gravure printing. It can be formed by.
- the transparent electrode When the transparent electrode is formed on the substrate, it may be subjected to cleaning, water removal, and hydrophilic modification.
- the patterned ITO substrate is sequentially cleaned with a detergent, acetone, isopropyl alcohol (IPA), and then dried in a heating plate for 1 to 30 minutes at 100 to 150 ° C., preferably at 120 ° C. for 10 minutes to remove moisture.
- IPA isopropyl alcohol
- the surface of the substrate is modified to be hydrophilic.
- the bonding surface potential can be maintained at a level suitable for the surface potential of the photoactive layer.
- it is easy to form the polymer thin film on the transparent electrode during modification the quality of the thin film may be improved.
- Pretreatment techniques for the transparent electrode include a) surface oxidation using parallel plate discharge, b) oxidation of the surface through ozone generated using UV ultraviolet light in a vacuum state, and c) oxygen generated by plasma. And oxidation using radicals.
- One of the above methods can be selected depending on the state of the transparent electrode or the substrate. However, whichever method is used, it is desirable to prevent oxygen escape from the surface of the transparent electrode or the substrate and to minimize the residual of moisture and organic matter. At this time, the substantial effect of the pretreatment can be maximized.
- a method of oxidizing a surface through ozone generated using UV may be used.
- the patterned ITO substrate is baked on a hot plate and dried well, then put into a chamber, and a UV lamp is activated to cause oxygen gas to react with UV light.
- the patterned ITO substrate can be cleaned.
- the surface modification method of the patterned ITO substrate in this specification does not need to be specifically limited, Any method may be used as long as it is a method of oxidizing a substrate.
- the metal electrode may be a metal having a small work function, but is not limited thereto.
- metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; LiF / Al, LiO 2 / Al, LiF / Fe, Al: Li, Al: BaF 2 , Al: BaF 2 It may be a material of a multi-layer structure such as, but is not limited thereto.
- the metal electrode may include silver (Ag), aluminum (Al), platinum (Pt), platinum (Pt), tungsten (W), copper (Cu), and molybdenum ( Mo), gold (Au), nickel (Ni) and palladium (Pd) may include one or two or more selected from the group consisting of. More specifically, the metal electrode may be silver (Ag).
- the substrate may include one or more selected from the group consisting of glass, a polymer material, and a metal.
- the substrate may be a transparent substrate.
- the transparent substrate may be soda ash glass or transparent plastic, but is not limited thereto.
- the substrate may be a flexible substrate.
- the substrate may be a flexible substrate including a polymer material.
- the substrate may be a plastic substrate.
- the polymer material is polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyetheretherketone (PEEK), polybutylene terephthalate (PBT), polyethylene Terephthalate (PET), polyvinyl chloride (PVC), polyethylene (PE), ethylene copolymer, polypropylene (PP), propylene copolymer, poly (4-methyl-1-pentene) (TPX), polyarylate ( PAR), polyacetal (POM), polyphenylene oxide (PPO), polysulfone (PSF), polyphenylene sulfide (PPS), polyvinylidene chloride (PVDC), polyvinyl acetate (PVAC), polyvinyl alcohol ( PVAL), polyvinyl acetal, polystyrene (PS), AS resin, ABS resin, polymethyl methacrylate (PMMA), fluorine resin, phenol resin (PF), melamine resin (MF), urea resin (UF
- the first electrode may be an anode, and the second electrode may be a cathode.
- the first electrode may be a cathode, and the second electrode may be an anode.
- the organic solar cell may have an inverted structure.
- the inverted structure means that the first electrode provided on the substrate is a cathode.
- the organic solar cell may have a normal structure.
- the normal structure means that the first electrode provided on the substrate is an anode.
- the organic solar cell may further include a buffer layer of a second electrode provided between the photoactive layer and the second electrode.
- the buffer layer of the second electrode may be positioned between the metal electrode and the photoactive layer, and the buffer layer controls the interfacial energy between the metal electrode and the photoactive layer to facilitate smooth charge flow. Can be induced.
- the buffer layer of the second electrode may include a conductive polymer and / or a metal oxide.
- the conductive polymer may be a conjugated polymer material, a dielectric polymer, graphene carbon nanotubes and a composite thereof.
- the conjugated polymer material is PEN (poly [(9,9-bis (30- (N, N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene )]) And FPQ-Br (poly [9,9'-bis [6 ''-(N, N, N-trimethylammonium) hexyl] fluorene-co-alt-phenylene] dibromide).
- the dielectric polymer may be polyethylenimine (PEI), polyethylenimine ethoxylated (PEIE), or the like.
- the conductive polymer may include one or two or more selected from the group consisting of phthalocyanine derivatives, naphthalocyanine derivatives, aromatic amine compounds, polyethylenedioxythiophene (PEDOT: PSS) and polyaniline.
- the metal oxide included in the buffer layer of the second electrode may include V 2 O 5 , and / or MoO 3 .
- the photoactive layer may have a bilayer structure including an n-type organic compound layer and a p-type organic compound layer.
- the photoactive layer may be a bulk heterojunction structure including an electron donor material and an electron acceptor material.
- the photoactive layer having the two-layer thin film structure may be formed of two layers, a p-type semiconductor thin film and an n-type semiconductor thin film, as a p-n junction type photoactive unit.
- the photoactive layer of the bulk heterogeneous structure may be blended with an n-type semiconductor and a p-type semiconductor as a photoactive unit.
- the photoactive layer of the present specification forms an exciton in which a p-type semiconductor is paired with electrons and holes by photo excitation, and the exciton is separated into electrons and holes at the p-n junction.
- the separated electrons and holes move to the n-type semiconductor thin film and the p-type semiconductor thin film, respectively, and they are collected by the first electrode and the second electrode, respectively, so that they can be used as electrical energy from the outside.
- the photoactive layer includes an electron donor material and an electron acceptor material as a photoactive material.
- the photoactive material may mean the electron donor material and the electron acceptor material.
- the photoactive layer forms excitons in which the electron donor material pairs electrons and holes by photoexcitation, and the excitons are separated into electrons and holes at the interface of the electron donor / electron acceptor.
- the separated electrons and holes move to the electron donor material and the electron acceptor material, respectively, and are collected by the first electrode and the second electrode, respectively, so that they can be used as electrical energy from the outside.
- the mass ratio of the electron donor material and the electron acceptor material may be 1:10 to 10: 1.
- the mass ratio of the electron acceptor material and the electron donor material of the present specification may be 1: 0.5 to 1: 5.
- an electron donor material and an electron accepting material may form a bulk heterojunction (BHJ).
- the photoactive layer of the present specification may be annealed at 30 to 300 ° C. for 1 second to 24 hours to maximize properties after the electron donating material and the electron accepting material are mixed.
- the photoactive layer may include at least one electron donor material and at least one electron acceptor material.
- the photoactive layer may include at least two kinds of electron donor materials and at least one kind of electron acceptor material.
- the photoactive layer may include at least one electron donor material and at least two electron acceptor materials.
- the electron donor material includes at least one electron donor; Or a polymer of at least one kind of electron acceptor and at least one kind of electron donor.
- the electron donor may include at least one kind of electron donor.
- the electron donor material may include a polymer of at least one kind of electron acceptor and at least one kind of electron donor.
- the electron donor material includes at least one monomer having the following structure, including a poly (phenylene vinylene) (PPV) -based polymer or a poly (3-hexylthiophene) (P3HT) -based polymer. It may be a copolymer.
- PPV poly (phenylene vinylene)
- P3HT poly (3-hexylthiophene)
- n is an integer from 1 to 1,000
- Rm is hydrogen, a substituted or unsubstituted alkyl group; A substituted or unsubstituted cycloalkyl group; Substituted or unsubstituted alkoxy group; Substituted or unsubstituted alkenyl group; Substituted or unsubstituted aromatic or aliphatic heterocyclic group containing one or more of N, O, S atoms, or substituted or unsubstituted aryl group.
- the electron donor materials are preferably materials having a small band gap so as to absorb the entire visible ray of sunlight, and a polymer compound is general, but is not limited thereto.
- the electron donor material and the electron acceptor material are mixed in a ratio (w / w) of 1:10 to 10: 1. After the electron donor material and the electron acceptor material are mixed, they may be annealed at 30 to 300 ° C. for 1 second to 24 hours in order to maximize properties.
- the thickness of the photoactive layer may be 10 nm to 1,000 nm.
- the organic material layer may include a light emitting layer and a hole injection layer; Hole transport layer; Hole blocking layer; A charge generating layer; Electron blocking layer; Electron transport layer; And an electron injection layer may further include one or two or more selected from the group consisting of electron injection layers.
- the charge generating layer is a layer in which holes and electrons are generated when a voltage is applied.
- the hole transport layer and / or electron transport layer material plays a role of efficiently transferring electrons and holes separated in the photoactive layer to the electrode, and the material is not particularly limited.
- the hole transport layer material may be PEDOT: PSS (Poly (3,4-ethylenediocythiophene) doped with poly (styrenesulfonic acid)), molybdenum oxide (MoO x ); Vanadium oxide (V 2 O 5 ); Nickel oxide (NiO); Tungsten oxide (WO x ), and the like, but is not limited thereto.
- PSS Poly (3,4-ethylenediocythiophene) doped with poly (styrenesulfonic acid)
- MoO x molybdenum oxide
- V 2 O 5 Vanadium oxide
- NiO Nickel oxide
- WO x Tungsten oxide
- the electron transport layer material may be electron-extracting metal oxides, specifically, a metal complex of 8-hydroxyquinoline; Complexes including Alq 3 ; Metal complexes including Liq; LiF; Ca; Titanium oxide (TiO x ); Zinc oxide (ZnO); And cesium carbonate (Cs 2 CO 3 ), and the like, but is not limited thereto.
- metal oxides specifically, a metal complex of 8-hydroxyquinoline; Complexes including Alq 3 ; Metal complexes including Liq; LiF; Ca; Titanium oxide (TiO x ); Zinc oxide (ZnO); And cesium carbonate (Cs 2 CO 3 ), and the like, but is not limited thereto.
- the photoactive layer may be formed by dissolving a photoactive material, such as an electron donor and / or an electron acceptor, in an organic solvent and then spin coating, dip coating, screen printing, spray coating, doctor blade, brush painting, or the like. It is not limited to the method.
- a photoactive material such as an electron donor and / or an electron acceptor
- One embodiment of the present specification provides a method of manufacturing the organic solar cell. Specifically, preparing a substrate; Forming a first electrode on the substrate; Forming an auxiliary electrode on the first electrode; Forming at least one organic material layer including a photoactive layer on the auxiliary electrode; And forming a second electrode on the organic material layer, wherein the areas of the upper and lower surfaces of the auxiliary electrode are different from each other.
- the forming of the auxiliary electrode may use an etching method using a transfer method or an etching solution.
- the etching method may include forming a metal layer on the first electrode, forming an etch protective layer on the metal layer, and then etching the metal layer with an etchant.
- the metal layer may be two or more metal layers, and the two or more metal layers may have different etching rates with respect to the etchant.
- FIG. 6 illustrates a cross section of a step of forming an auxiliary electrode made of two or more metal layers, according to one embodiment of the present specification. 6 illustrates forming a first metal layer 701 and a second metal layer 702 on the first electrode 201, and (a) forming an etch protection layer 801 on the second metal layer 702. , (b) after etching using the etchant, and (c) shows the process of peeling off the etching protective layer 801.
- the method of manufacturing an organic solar cell may include preparing a substrate, forming an anode on the substrate, and forming a hole transport layer on the anode, on the hole transport layer.
- the method may include forming a photoactive layer, forming an electron transport layer on the photoactive layer, and forming a cathode on the electron transport layer.
- the method of manufacturing an organic solar cell may include preparing a substrate, forming a cathode on the substrate, forming an electron transport layer on the cathode, and the electron transport layer. Forming a photoactive layer on the photoactive layer, forming a hole transport layer on the photoactive layer, and forming an anode on the hole transport layer.
- the organic solar cell of the present specification can be produced, for example, by sequentially laminating an anode, a photoactive layer and a cathode on a substrate.
- the organic solar cell according to the present invention uses a metal vapor deposition (PVD) method, such as sputtering or e-beam evaporation, to form a metal or conductive metal oxide or an alloy thereof on a substrate.
- PVD metal vapor deposition
- It can be prepared by depositing an anode to form an organic layer on the organic material layer by vacuum deposition or solution coating, and then depositing a material that can be used as a cathode thereon.
- the organic layer of each layer is a solvent process (e.g., roll to roll, spin coating, dip coating, casting, roll court, flow) rather than a deposition method using various monomolecular or polymer materials. It can be prepared by a method such as coating, doctor blading, screen printing, inkjet printing, gravure printing, offset printing, spray coating or thermal transfer.
- solvent process e.g., roll to roll, spin coating, dip coating, casting, roll court, flow
- It can be prepared by a method such as coating, doctor blading, screen printing, inkjet printing, gravure printing, offset printing, spray coating or thermal transfer.
- the organic material layer of each layer, vacuum deposition, sputtering, plasma, ion plating can be produced by a method such as dry film forming method.
- an anode deposition step, a photoactive layer stacking step, a photoactive layer alignment step, a photoactive layer heat treatment step may include a cathode deposition step.
- the photoactive layer stacking step may be disposed in a complex thin film structure, that is, bulk hetero junction, in which a solution containing an electron donor material and an electron acceptor material is sprayed and deposited on an upper side of the anode.
- the electron acceptor material may be a mixed solution of a composite polymer material dissolved in an organic solvent.
- a hexagonal mesh pattern was formed. After etching for 9 seconds at 45 °C using a phosphoric acid / nitric acid / acetic acid-based etching solution, the shape was observed by an optical microscope and the cross section was observed by a scanning electron microscope (SEM). Thereafter, the novolak photoresist was removed using an organic amine-based stripper to prepare a transparent electrode having an ITO / reverse taper metal auxiliary electrode.
- PR novolak-based positive photoresist
- FIG. 7 is an optical photomicrograph immediately after PR patterning by the method of Preparation Example 1
- Figure 8 is a SEM cross-sectional photo immediately after PR patterning and Cu / Al etching by the method of Preparation Example 1.
- ITO since ITO remains unetched and Cu has a faster etching rate than Al in the same etchant, Al is located under the PR while maintaining a line width of about 7 ⁇ m, whereas Cu has a fast etching rate. Further etching below Al reveals a very narrow line width.
- the PEDOT: PSS solution was coated on a transparent electrode having a metal auxiliary electrode having a line width ratio of 1: 2 between the lower surface and the upper surface manufactured by the same method as Preparation Example 1, and then heat-treated at 140 ° C. for 15 minutes.
- the P3HT: PCBM solution mixed at a ratio of 1: 0.7 on the PEDOT: PSS to form a photoactive layer of about 220 nm
- an Al electrode was deposited on the photoactive layer at 1 ⁇ 10 ⁇ 7 torr and then heated at 150 ° C. 10 minutes after the heat treatment to produce an organic solar cell.
- An organic solar cell was manufactured in the same manner as in Example 1, without forming an auxiliary electrode.
- An organic solar cell was manufactured in the same manner as in Example 1, except that a metal electrode having a 1: 1 ratio of the line width of the lower surface and the upper surface of the auxiliary electrode was provided.
- V oc denotes an open voltage
- J sc denotes a short circuit current
- FF denotes a fill factor
- PCE denotes an energy conversion efficiency.
- the open-circuit and short-circuit currents are the X- and Y-axis intercepts in the four quadrants of the voltage-current density curve, respectively. The higher these two values, the higher the efficiency of the solar cell.
- the fill factor is the area of the rectangle drawn inside the curve divided by the product of the short circuit current and the open voltage. By dividing these three values by the intensity of the emitted light, the energy conversion efficiency can be obtained, and higher values are preferable.
- the organic solar cell according to the exemplary embodiment of the present specification implements better performance than when the auxiliary electrode is absent or the upper and lower line widths of the auxiliary electrode are the same.
- An organic solar cell was manufactured in the same manner as in Example 1, and as the area of the photoactive layer was widened, the decrease in resistance and increase in light absorption due to the auxiliary electrode having a line width ratio of 1: 2 between the lower surface and the upper surface of the auxiliary electrode were observed. It was.
- An organic solar cell was manufactured in the same manner as in Comparative Example 1, and as the area of the photoactive layer was increased, the resistance decrease and the light absorption increase of the device without the auxiliary electrode were observed.
- the organic solar cell was manufactured in the same manner as in Comparative Example 2, while the area of the photoactive layer was increased, and the resistance and the light absorption increased due to the auxiliary electrode due to the auxiliary electrode having a 1: 1 ratio of the line width of the lower surface and the upper surface of the auxiliary electrode. The properties were observed.
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Abstract
Description
하면:상면의 보조 전극 선폭비 | Voc(V) | Jsc(mA/cm2) | FF | PCE(%) | |
비교예 1 | 0.62 | 9.41 | 0.51 | 2.99 | |
비교예 2 | 1:1 | 0.62 | 9.22 | 0.56 | 3.20 |
실시예 1 | 1:2 | 0.62 | 10.12 | 0.57 | 3.60 |
실시예 2 | 1:3 | 0.62 | 10.2 | 0.55 | 3.48 |
실시예 3 | 광활성층 면적(mm2) | Voc(V) | Jsc(mA/cm2) | FF | PCE(%) |
43.6 | 0.62 | 10.12 | 0.57 | 3.60 | |
194 | 0.62 | 8.79 | 0.45 | 2.45 | |
287 | 0.62 | 7.4 | 0.43 | 1.97 |
비교예 3 | 광활성층 면적(mm2) | Voc(V) | Jsc(mA/cm2) | FF | PCE(%) |
43.6 | 0.62 | 9.05 | 0.52 | 2.94 | |
194 | 0.62 | 7.99 | 0.29 | 1.43 | |
287 | 0.62 | 6.53 | 0.26 | 1.07 |
비교예 4 | 광활성층 면적(mm2) | Voc(V) | Jsc(mA/cm2) | FF | PCE(%) |
43.6 | 0.62 | 9.22 | 0.56 | 3.20 | |
194 | 0.62 | 8.05 | 0.40 | 2.10 | |
287 | 0.62 | 7.01 | 0.37 | 1.61 |
Claims (20)
- 제1 전극;상기 제1 전극에 대향하여 구비된 제2 전극;상기 제1 전극 및 상기 제2 전극 사이에 구비된 광활성층을 포함하는 1층 이상의 유기물층; 및상기 제1 전극 상에 접하여 구비된 보조 전극을 포함하고,상기 보조 전극은 입사광이 도달하는 제1 또는 제2 전극에 가까운 면의 면적이 이에 대향하는 면의 면적보다 작은 것인 유기태양전지.
- 청구항 1에 있어서,상기 제1 전극으로 입사광이 도달하고,상기 보조 전극은 상기 제1 전극에 접하는 면의 면적이 대향하는 면의 면적보다 작은 것인 유기태양전지.
- 청구항 1에 있어서,상기 제2 전극으로 입사광이 도달하고,상기 보조 전극은 상기 제1 전극에 접하는 면의 면적이 대향하는 면의 면적보다 큰 것인 유기태양전지.
- 청구항 1에 있어서,상기 입사광이 도달하는 제1 또는 제2 전극은 투명 전극인 것인 유기태양전지.
- 청구항 1에 있어서,상기 보조 전극의 수직 단면은 사다리꼴 형상인 것인 유기태양전지.
- 청구항 1에 있어서,상기 보조 전극은 상면과 하면의 선폭의 비가 1:1.3 내지 1:3, 또는 1.3:1 내지 3:1인 것인 유기태양전지.
- 청구항 1에 있어서,상기 보조 전극은 금속 전극인 것인 유기태양전지.
- 청구항 1에 있어서,상기 보조 전극은 메쉬 구조로 구비되는 것인 유기태양전지.
- 청구항 1에 있어서,상기 보조 전극은 2층 이상으로 이루어진 것인 유기태양전지.
- 청구항 9에 있어서,상기 보조 전극의 각 층은 입사광이 도달하는 제1 또는 제2 전극에 가까운 면의 면적이 이에 대향하는 면의 면적보다 작은 것인 유기태양전지.
- 청구항 9에 있어서,상기 2층 이상의 보조 전극은 입사광이 도달하는 제1 또는 제2 전극에 가장 가까운 면의 면적이 이에 대향하는 가장 멀리 떨어진 면의 면적보다 작은 것인 유기태양전지.
- 청구항 9에 있어서,상기 보조 전극의 각 층은 서로 다른 물질로 구성된 것인 유기태양전지.
- 청구항 9에 있어서,상기 보조 전극의 각 층의 수직 단면은 각각 독립적으로, 정사각형, 직사각형 또는 사다리꼴인 것인 유기태양전지.
- 청구항 1에 있어서,상기 광활성층은 n형 유기물층 및 p형 유기물층을 포함하는 이층 박막(bilayer) 구조인 것인 유기태양전지.
- 청구항 1에 있어서,상기 광활성층은 전자 주개 물질 및 전자 받개 물질을 포함하는 벌크헤테로정션 구조인 것인 유기태양전지.
- 청구항 1에 있어서,상기 유기물층은 발광층과 정공 주입층; 정공 수송층; 정공 차단층; 전하 발생층; 전자 차단층; 전자 수송층; 및 전자 주입층으로 이루어진 군에서 선택되는 1종 또는 2종 이상을 더 포함하는 것인 유기태양전지.
- 청구항 1 내지 16 중 어느 한 항의 유기태양전지의 제조방법에 있어서,기판을 준비하는 단계;상기 기판 상에 제1 전극을 형성하는 단계;상기 제1 전극 상에 보조 전극을 형성하는 단계;상기 보조 전극 상에 광활성층을 포함하는 1층 이상의 유기물층을 형성하는 단계; 및상기 유기물층 상에 제2 전극을 형성하는 단계를 포함하고,상기 보조 전극의 상면 및 하면의 면적이 서로 상이한 것인 유기태양전지의 제조방법.
- 청구항 17에 있어서,상기 보조 전극을 형성하는 단계는 전사법 또는 식각액을 이용한 식각법을 이용하는 것인 유기태양전지의 제조방법.
- 청구항 18에 있어서,상기 식각법은 상기 제1 전극상에 금속층을 형성하고, 상기 금속층 상에 식각 보호층을 형성한 후, 식각액으로 상기 금속층을 식각하는 것을 포함하는 것인 유기태양전지의 제조방법.
- 청구항 19에 있어서,상기 금속층은 2 이상의 금속층이고, 상기 2 이상의 금속층은 각각 식각액에 대한 식각 속도가 상이한 것인 유기태양전지의 제조방법.
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101539959B1 (ko) * | 2015-01-06 | 2015-07-30 | 성안기계 (주) | 유기 태양 전지 제조 방법 |
KR102278243B1 (ko) * | 2015-02-25 | 2021-07-19 | 한국전자통신연구원 | 전기변색 소자 |
KR101702239B1 (ko) * | 2015-10-30 | 2017-02-02 | 재단법인 멀티스케일 에너지시스템 연구단 | 페로브스카이트 태양전지의 재생방법 |
KR101928932B1 (ko) * | 2015-12-07 | 2018-12-13 | 주식회사 엘지화학 | 중합체 및 이를 포함하는 유기 태양 전지 |
KR102137547B1 (ko) | 2016-08-12 | 2020-07-24 | 삼성에스디아이 주식회사 | 태양전지용 전면 전극 및 이를 포함하는 태양전지 |
KR20190020978A (ko) | 2017-08-22 | 2019-03-05 | 코오롱인더스트리 주식회사 | 유기 태양전지 |
EP3686905A4 (en) * | 2017-09-19 | 2020-11-04 | LG Chem, Ltd. | ELECTRODE SUBSTRATE FOR A TRANSPARENT LIGHT EMITTING DEVICE DISPLAY AND MANUFACTURING METHOD FOR IT |
KR102235223B1 (ko) * | 2017-11-28 | 2021-04-02 | 주식회사 엘지화학 | 광활성층 및 이를 포함하는 유기태양전지 |
CN108400241A (zh) * | 2018-01-18 | 2018-08-14 | 华北电力大学 | 用8-羟基喹啉钛作电子传输层的聚合物太阳能电池及其制备方法 |
CN108899424B (zh) * | 2018-06-28 | 2023-05-19 | 国家纳米科学中心 | 一种有机光伏电池及其制备方法 |
CN109786559A (zh) * | 2018-12-28 | 2019-05-21 | 浙江清华柔性电子技术研究院 | 光伏组件及智能发电窗户 |
TWI732444B (zh) * | 2020-02-05 | 2021-07-01 | 凌巨科技股份有限公司 | 太陽能電池緩坡結構及其製造方法 |
KR20230158247A (ko) | 2022-05-11 | 2023-11-20 | 성균관대학교산학협력단 | 페로브스카이트 태양전지 모듈의 분리 용액을 재활용하는 방법 및 이를 이용한 페로브스카이트 태양전지 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243989A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 透明フィルム型太陽電池モジュール |
US20010015221A1 (en) * | 1999-12-22 | 2001-08-23 | Yuichi Kubota | Solar cell and method of fabricating the same |
JP2010232351A (ja) * | 2009-03-26 | 2010-10-14 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2011159934A (ja) * | 2010-02-04 | 2011-08-18 | Mitsubishi Chemicals Corp | 有機太陽電池セル、太陽電池モジュール及び有機太陽電池セルの製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CZ302303B6 (cs) * | 1998-08-25 | 2011-02-16 | Merck Patent Gmbh | Homodimerní fúzní protein vykazující inhibicní aktivitu na angiogenezi, zpusob jeho produkce, molekula DNA a replikovatelný expresní vektor |
WO2004032274A1 (ja) * | 2002-10-03 | 2004-04-15 | Fujikura Ltd. | 電極基板、光電変換素子、導電性ガラス基板およびその製造方法、並びに色素増感太陽電池 |
EP1606846B1 (en) * | 2003-03-24 | 2010-10-27 | Konarka Technologies, Inc. | Photovoltaic cell with mesh electrode |
WO2005041217A1 (ja) | 2003-10-28 | 2005-05-06 | Sumitomo Metal Mining Co., Ltd. | 透明導電積層体とその製造方法及び透明導電積層体を用いたデバイス |
TWM266605U (en) * | 2004-07-07 | 2005-06-01 | Kingconn Technology Co Ltd | Dual purpose memory card connection socket |
DE102006023257B4 (de) * | 2005-07-09 | 2011-05-12 | Atmel Automotive Gmbh | Vorrichtung zum Heissproben von integrierten Halbleiterschaltkreisen auf Wafern |
US7314773B2 (en) | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
KR100764362B1 (ko) * | 2005-11-01 | 2007-10-08 | 삼성전자주식회사 | 태양전지용 투명 전극, 그의 제조방법 및 그를 포함하는반도체 전극 |
EP2109900A1 (en) * | 2007-01-08 | 2009-10-21 | Plextronics, Inc. | Quantum dot photovoltaic device |
AU2009281705A1 (en) | 2008-08-12 | 2010-02-18 | Dyesol Ltd | Current collector systems for use in flexible photoelectrical and display devices and methods of fabrication |
DE102008045948A1 (de) * | 2008-09-04 | 2010-03-11 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines organischen strahlungsemittierenden Bauelements und organisches strahlungsemittierendes Bauelement |
JP2010141250A (ja) * | 2008-12-15 | 2010-06-24 | Dainippon Printing Co Ltd | 有機薄膜太陽電池およびその製造方法 |
JP2011222819A (ja) | 2010-04-12 | 2011-11-04 | Mitsubishi Chemicals Corp | 太陽電池 |
KR101152544B1 (ko) * | 2010-07-29 | 2012-06-01 | 삼성에스디아이 주식회사 | 광전 변환 소자용 전극, 이의 제조 방법 및 이를 포함하는 광전 변환 소자 |
JP2012057011A (ja) * | 2010-09-07 | 2012-03-22 | Kyocera Chemical Corp | 部分多孔質ポリマー粒子の製造方法及び部分多孔質ポリマー粒子 |
JP5421218B2 (ja) * | 2010-10-26 | 2014-02-19 | 出光興産株式会社 | 光電変換装置、及び光電変換装置の製造方法 |
JP2012146420A (ja) | 2011-01-07 | 2012-08-02 | Toppan Printing Co Ltd | 色素増感太陽電池および色素増感太陽電池の製造方法 |
JP2013016669A (ja) * | 2011-07-05 | 2013-01-24 | Fujifilm Corp | 光電変換素子の製造方法 |
CN102637826A (zh) | 2012-05-04 | 2012-08-15 | 中国科学院长春光学精密机械与物理研究所 | 一种大面积有机太阳能电池结构及其制备方法 |
CN103078057B (zh) * | 2013-01-29 | 2016-01-20 | 苏州大学 | 有机太阳能电池及其制作方法 |
-
2014
- 2014-06-13 US US14/897,919 patent/US10446772B2/en active Active
- 2014-06-13 WO PCT/KR2014/005225 patent/WO2014200312A1/ko active Application Filing
- 2014-06-13 EP EP14810301.3A patent/EP2999017B1/en active Active
- 2014-06-13 KR KR1020140072465A patent/KR101557587B1/ko active IP Right Grant
- 2014-06-13 CN CN201480033479.7A patent/CN105393376B/zh active Active
- 2014-06-13 JP JP2016519452A patent/JP6162891B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000243989A (ja) * | 1999-02-18 | 2000-09-08 | Dainippon Printing Co Ltd | 透明フィルム型太陽電池モジュール |
US20010015221A1 (en) * | 1999-12-22 | 2001-08-23 | Yuichi Kubota | Solar cell and method of fabricating the same |
JP2010232351A (ja) * | 2009-03-26 | 2010-10-14 | Dainippon Printing Co Ltd | 有機薄膜太陽電池 |
JP2011159934A (ja) * | 2010-02-04 | 2011-08-18 | Mitsubishi Chemicals Corp | 有機太陽電池セル、太陽電池モジュール及び有機太陽電池セルの製造方法 |
Non-Patent Citations (5)
Title |
---|
ADV. MATER, vol. 18, 2006, pages 572 - 576 |
APPL. PHYS. LETT., vol. 93, 2008 |
JIN YOUNG KIM ET AL.: "New Architecture for High-Efficiency Polymer Photovoltaic Cells Using Solution-Based Titanium Oxide as an Optical Spacer", ADVANCED MATERIALS, vol. 18, March 2006 (2006-03-01), pages 572 - 576, XP055293418 * |
See also references of EP2999017A4 |
SOLAR ENERGY MATERIALS & SOLAR CELLS, vol. 101, 2012, pages 289 - 294 |
Also Published As
Publication number | Publication date |
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EP2999017B1 (en) | 2019-11-06 |
KR20140146010A (ko) | 2014-12-24 |
US10446772B2 (en) | 2019-10-15 |
JP6162891B2 (ja) | 2017-07-12 |
CN105393376A (zh) | 2016-03-09 |
KR101557587B1 (ko) | 2015-10-05 |
US20160141536A1 (en) | 2016-05-19 |
EP2999017A4 (en) | 2016-12-28 |
JP2016521921A (ja) | 2016-07-25 |
CN105393376B (zh) | 2017-11-17 |
EP2999017A1 (en) | 2016-03-23 |
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