WO2014187530A1 - Leuchtstoffe - Google Patents
Leuchtstoffe Download PDFInfo
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- WO2014187530A1 WO2014187530A1 PCT/EP2014/001162 EP2014001162W WO2014187530A1 WO 2014187530 A1 WO2014187530 A1 WO 2014187530A1 EP 2014001162 W EP2014001162 W EP 2014001162W WO 2014187530 A1 WO2014187530 A1 WO 2014187530A1
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- Prior art keywords
- compound according
- mixture
- emission
- phosphors
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims description 46
- 239000000203 mixture Substances 0.000 claims description 45
- 229910052712 strontium Inorganic materials 0.000 claims description 16
- 229910052791 calcium Inorganic materials 0.000 claims description 13
- 229910052749 magnesium Inorganic materials 0.000 claims description 13
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 6
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 claims description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract description 2
- 239000011575 calcium Substances 0.000 description 50
- 230000003595 spectral effect Effects 0.000 description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- 238000001228 spectrum Methods 0.000 description 12
- 230000005855 radiation Effects 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 9
- 239000004570 mortar (masonry) Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 9
- 229910017639 MgSi Inorganic materials 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910004261 CaF 2 Inorganic materials 0.000 description 6
- 229910004762 CaSiO Inorganic materials 0.000 description 6
- 101100476480 Mus musculus S100a8 gene Proteins 0.000 description 6
- 238000012512 characterization method Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000000695 excitation spectrum Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009877 rendering Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910052950 sphalerite Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- -1 Al 2 O 3 Chemical class 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 101001041608 Streptomyces coelicolor (strain ATCC BAA-471 / A3(2) / M145) Peptide deformylase 4 Proteins 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052693 Europium Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 2
- 229910002420 LaOCl Inorganic materials 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 206010001497 Agitation Diseases 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910016066 BaSi Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 101150027751 Casr gene Proteins 0.000 description 1
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017414 LaAl Inorganic materials 0.000 description 1
- 229910010199 LiAl Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017857 MgGa Inorganic materials 0.000 description 1
- 229910017625 MgSiO Inorganic materials 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910003668 SrAl Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000002284 excitation--emission spectrum Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/22—Luminous paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/57—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing manganese or rhenium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
Definitions
- the present invention relates to Siiicatleuchtscher, a process for their preparation and their use as conversion phosphors.
- the present invention also relates to an emission-converting material containing the conversion phosphor according to the invention and its use in light sources, in particular pc-LEDs (phosphor converted light emitting devices).
- Further objects of the present invention are light sources, in particular pc LEDs, and illumination units which contain a primary light source and the emission-converting material according to the invention.
- inorganic phosphors have been developed to spectrally adapt emissive screens, X-ray amplifiers and radiation or light sources so that they optimally meet the requirements of the respective field of application while using as little energy as possible.
- the type of excitation, d. H. the nature of the primary source of radiation and the required emission spectrum are crucial for the selection of host lattices and the
- RGB LEDs red + green + blue LEDs in which white light is generated by mixing the light of three different LEDs emitting in the red, green and blue spectral regions.
- Primary light source emits, for example, blue light which excites one or more phosphors (conversion phosphors), which in the yellow area emit light. By mixing the blue and the yellow light, white light is created. Alternatively, two or more phosphors emitting, for example, green or yellow and orange or red light may be used.
- UV LED + RGB phosphor in which a semiconductor emitting in the UV region (primary light source) emits light to the environment in which three different conversion phosphors are excited to emit in the red, green and blue spectral regions.
- a semiconductor emitting in the UV region primary light source
- three different conversion phosphors are excited to emit in the red, green and blue spectral regions.
- two different phosphors can be used which emit yellow or orange and blue.
- Binary complementary systems have the advantage of being able to produce white light with only one primary light source and, in the simplest case, only one conversion phosphor.
- the best known of these systems consists of an indium-aluminum-gallium-nitride chip as a primary light source emitting light in the blue spectral range, and a cerium-doped yttrium-aluminum garnet (YAG: Ce) as a conversion phosphor, which is excited in the blue region and emit light in the yellow spectral range.
- Indium-Gallium-Nitride LEDs have a long lifetime, low depth and high internal and external quantum efficiency.
- the main advantage of using a blue primary radiation source is the low Stokes loss on conversion to white light.
- a blue primary radiation source such as indium gallium nitride LEDs or In 3+ gas discharges
- the use of blue-emitting indium-gallium-nitride LEDs also leads to a number of difficulties, such as the strong dependency of the color point on the thickness of the phosphor layer, the strong spectral interaction between the luminophores due to the low Stokes shift and a limited choice Luminophores, since many activators or phosphors do not absorb sufficiently strong in the blue spectral range.
- near-UV LEDs as the basis for white-emitting LEDs are the focus of a number of developments in LED light sources, and the research and development of novel conversion LEDs for UV LEDs has been intensified in recent years.
- inorganic fluorescent powders which can be excited in the near UV region of the spectrum are becoming more and more important today
- silicate phosphors described below achieve this object. These phosphors can be excited in the near UV range and show emission in both the blue and the red spectral range.
- EA 1 is Ba or a mixture of Ba and Sr containing up to 20 atom% of Sr;
- EA 2 is selected from the group consisting of Ca or Sr or mixtures of these elements, with up to 20 atomic% of these elements being replaced by Mg;
- the compounds according to the invention are excitable in the near UV spectral region, preferably at about 370-420 nm, and usually exhibit emission maxima in the blue as well as in the orange or red spectral range, so that the resulting emission color can be termed magenta.
- blue light is defined as light whose emission maximum lies between 400 and 459 nm, cyan light whose emission maximum is between 460 and 505 nm, green light whose emission maximum lies between 506 and 545 nm , as yellow light such, whose emission maximum lies between 546 and 565 nm, as orange light such, whose
- Emission maximum between 566 and 600 nm and is such as red light whose emission maximum is between 601 and 670 nm.
- EA 1 is selected from Ba or a mixture of Ba and Sr containing not more than 10 atom% of Sr.
- EA 1 is particularly preferably Ba.
- EA 2 is selected from Ca or Sr or a mixture of Ca and Sr or a mixture of Ca and Mg which contains at most 20 atomic% Mg or a mixture of Sr and Mg which is at most 20 atomic - contains% Mg.
- a preferred embodiment of the compounds according to formula (1) are therefore the compounds of the following formulas (2) to (4), : Eu x , Mn y (2) (Bai -z Sr 2 ) 1-x (Cai -v Mg v ) 2-y Si 3 O 9 : Eu X) Mn y (3)
- Particularly preferred embodiments of the compounds of the formula (2), (3) and (4) are the compounds of the following formulas (2a) to (2c), (3a) and (4a)
- Bai -x Ca 2- ySi 3 0 9 Eu x , Mn y (2a)
- Bai -x Sr 2- ySi 3 0 9 Eu x , Mn y (2b)
- the index y in the compounds of the formulas (1) to (4) and the above-mentioned preferred embodiments is 0.05 ⁇ y ⁇ 0.15.
- Another object of the present invention is a process for preparing a compound according to formula (1) or the preferred embodiments, comprising the steps:
- the ions EA 1 and EA 2 are preferably used in the form of the corresponding carbonates, oxides or oxalates. Carbonates are preferably used.
- Eu is preferably used in the form of the oxide Eu 2 O 3 .
- Mn is further preferably in the form of the oxalate, in particular as hydrate MnC2O "2H 2 O.
- Mn 3 can be inserted in the form of the carbonate MnCO.
- Si is used in the form of the oxide SiO 2 .
- This is amorphous SiO 2 , with preference being given to microparticles or, more preferably, to nanoparticles.
- the mixture in step a) is preferably prepared in a mortar, preferably in a solvent.
- the solvent used is preferably acetone or an alcohol, in particular ethanol, propanol or isopropanol.
- the mixture in step a) is preferably produced in an automatic mortar mill.
- the mixture Before calcining, the mixture is dried. This is preferably carried out in air first at room temperature and then in a drying oven at elevated temperature, preferably at 60-120 ° C, in particular at about 80 ° C.
- Suitable fluxes are, for example, boric acid H 3 BO 3 , ammonium fluoride NH 4 F, barium fluoride BaF 2 or calcium fluoride CaF 2 . Boric acid is preferred. Remains of the flux can also remain in the product.
- the calcination of the mixture in step b) of the process according to the invention is preferably carried out under reducing or at least under non-oxidizing conditions.
- Preferred here is a reaction time of 5 to 24 hours, more preferably from 8 to 16 hours, and a
- Temperature in the range of 1100 to 1300 ° C, more preferably from 120.0 to 1250 ° C.
- the non-oxidizing or reducing conditions are z. B. with inert gases or carbon monoxide, forming gas or hydrogen or vacuum or oxygen deficient atmosphere. Preference is given to a forming gas atmosphere, in particular with a content of 5 to 10% by volume H 2 in N 2 .
- the calcining can be carried out, for example, so that the resulting mixtures are introduced in a vessel made of boron nitride or corundum in a high-temperature furnace.
- the high temperature furnace is in a preferred embodiment a tube furnace. It is preferred if the compounds according to the invention are comminuted after the calcining step, for example by mortars.
- the average particle size d 50 of the volume distribution of the phosphors according to the invention is usually between 50 nm and 30 ⁇ m for use in LEDs, preferably between 1 ⁇ m and 20 ⁇ m.
- the particle size is preferably determined by Coulter counter measurement.
- the compounds of the invention may be coated. Suitable for this purpose are all coating methods, as known to the person skilled in the art according to the prior art and used for phosphors. Suitable materials for the coating are, in particular, metal oxides and nitrides, in particular earth metal oxides, such as Al 2 O 3 , and earth metal nitrides, such as AlN, and SiO 2 .
- the coating can be carried out, for example, by fluidized bed processes or wet-chemical. Suitable coating methods are known, for example, from JP 04-304290, WO 91/10715, WO 99/27033, US 2007/0298250, WO 2009/065480 and WO 2010/075908.
- the aim of the coating can be a higher stability of the phosphors, for example against air or moisture.
- the goal can also be an improved coupling and decoupling of light by a suitable choice of the surface of the coating and the
- the compounds may also be coated with organic materials, for example with
- Siloxanes This may have advantages in terms of dispersibility in a resin in the manufacture of the LEDs.
- Yet another object of the present invention is the use of the compound of the invention as a phosphor or conversion luminescent material, in particular for the partial or complete conversion of the near UV emission of a light emitting diode in light with a longer wavelength.
- the compounds according to the invention are also referred to as phosphors.
- Another object of the present invention is therefore a
- Emission converting material comprising a compound of the invention.
- the emission-converting material may consist of the compound according to the invention and in this case would be equivalent to the term "conversion luminescent substance" as defined above It may also be preferred that the emission-converting material according to the invention contains, in addition to the compound according to the invention, further conversion luminescent substances In this case, the emission-converting material according to the invention preferably contains a mixture of at least two conversion phosphors, at least one of which is a compound of the invention It is particularly preferred that the at least two conversion phosphors are phosphors which emit light of wavelengths that are complementary to one another.
- the compounds according to the invention give good LED qualities.
- the LED quality is described using common parameters, such as the Color Rendering Index (CRI), the Correlated Color Temperature (CCT), lumen equivalents or absolute lumens or the color point in CIE x and y coordinates.
- CRI Color Rendering Index
- CCT Correlated Color Temperature
- lumen equivalents or absolute lumens or the color point in CIE x and y coordinates.
- the Color Rendering Index is a familiar, non-standard photometric size, which the color fidelity of an artificial light source with that of sunlight or and
- Filament light sources compare (the latter two have a CRI of 100).
- Correlated Color Temperature is a photometric quantity with unit Kelvin which is familiar to the person skilled in the art. The higher the numerical value, the higher the blue component of the light and the colder the white light of an artificial radiation source appears to the viewer.
- the CCT follows the concept of the black light emitter, whose color temperature describes the so-called Planckian curve in the CIE diagram.
- the lumen equivalent is a photometric quantity known to the person skilled in the art with the unit Im W, which describes how large the photometric luminous flux in lumens of a light source is at a certain radiometric radiation power with the unit Watt. The higher the lumen equivalent, the more efficient a light source is.
- the lumen is a photometrical photometric quantity which is familiar to the person skilled in the art and describes the luminous flux of a light source, which is a measure of the total visible radiation emitted by a radiation source. The larger the luminous flux, the brighter the light source appears to the observer.
- CIE x and CIE y represent the coordinates in the familiar CIE standard color diagram (in this case normal observer 1931), which describes the color of a light source.
- the excitability of the phosphors according to the invention extends over a wide range, which ranges from about 250 nm to 420 nm, preferably 350 nm up to about 420 nm. Usually, the maximum is the
- Excitation curve of the phosphors according to the invention at about 350 nm.
- Another object of the present invention is a light source containing at least one primary light source and at least one compound of the invention.
- the maximum emission of the primary light source is usually in the range 350 nm to 420 nm, preferably 370 nm up to about 420 nm, wherein the primary radiation is partially or completely converted by the phosphor according to the invention in longer wavelength radiation.
- the person skilled in possible forms of such light sources are known. These may be light-emitting LED chips of different construction.
- the primary light source is a luminescent one based on ZnO, TCO (transparent conducting oxide) or SiC
- the primary light source is a source which exhibits electroluminescence and / or photoluminescence.
- the primary light source can also be a plasma or discharge source.
- Corresponding light sources according to the invention are also referred to as light-emitting diodes or LEDs.
- the phosphors according to the invention can be used individually or as a mixture with the following phosphors familiar to the person skilled in the art. Since the phosphors according to the invention exhibit emission in the blue and red spectral range, it is particularly preferred if they are present in
- Ba 2 SiO 4 Eu 2+ , BaSi 2 O 5 : Pb 2+ , Ba x Sr 1 -x F 2 : Eu 2+ , BaSrMgSi 2 O 7 : Eu 2+ , BaTiP 2 O 7 , (Ba, Ti) 2 P 2 O 7 : Ti, Ba 3 WO 6 : U, BaY 2 F 8 : Er 3+ , Yb ⁇ Be 2 SiO 4 : Mn 2 ⁇ Bi 4 Ge 3 Oi 2 , CaAl 2 O 4 : Ce 3+ , CaLa 4 O 7 : Ce 3+ , CaAl 2 O 4 : Eu 2+ , CaAl 2 O: Mn + ,
- CaAl 4 O 7 Pb 2+ , Mn 2+ , CaAl 2 O 4 : Tb 3+ , Ca 3 Al 2 Si 3 O 12 : Ce 3+ ,
- Ca 2 B 5 O 9 Cl Eu 2+
- Ca 2 B 5 O 9 Cl Pb 2+
- CaB 2 O 4 Mn 2+
- Ca 2 B 2 O 5 Mn 2+
- CaB 2 O 4 Pb 2+
- CaB 2 P 2 O 9 Eu 2+
- Ca 5B 2 SiO 10 Eu 3+
- Cao.5Bao.5Ali2Oi 9 Ce 3+ , Mn 2+ , Ca 2 Ba 3 (PO 4 ) 3 Cl: Eu 2+ , CaCl 2 : Eu 2+ , Mn 2+ in SiO 2 , CaF 2 : Ce 3+ , CaF 2 : Ce 3+ , Mn 2+ , CaF 2 : Ce 3+ , Tb 3+ , CaF 2 : Eu 2+ ,
- CaF 2 Mn 2+
- CaGa 2 O Mn 2+
- CaGa 4 O 7 Mn 2+
- CaGa 2 S 4 Ce 3+
- CaGa 2 S 4 Eu 2+
- CaGa 2 S 4 Mn 2+
- CaGa 2 S 4 Pb 2+
- CaGeO 3 Mn 2+
- Ca 5 (PO 4) 3 Cl Eu +, Ca 5 (P0 4) 3 Cl: Mn +, Ca 5 (PO 4) 3 Cl: Sb 3+, Ca 5 (PO 4) 3 Cl: Sn 2+, ⁇ -Ca 3 (PO 4 ) 2 : Eu 2+ , Mn 2+ , Ca 5 (PO 4 ) 3 F: Mn 2+ , Ca s (PO 4 ) 3 F: Sb 3+ ,
- CaSiO 3 Pb 2+ , CaSiO 3 : Pb 2+ , Mn 2+ , CaSiO 3 : Ti 4+ , CaSr 2 (P0 4 ) 2 : Bi 3+ ,
- CdS In, Te, CdS: Te, CdWO 4 , CsF, CsI, CsI: Na + , CsI: TI,
- GdNb0 4 Bi 3+, GD20 2 S: Eu 3+, Gd 2 0 2 Pr 3+, Gd 2 0 2 S: Pr, Ce, F, Gd 2 0 2 S: Tb 3+, Gd 2 Si0 5: Ce 3 ⁇ KGa Oi 7 : Mn 2+ , K 2 La 2 Ti 3 O 10 : Eu, KMgF 3 : Eu 2+ , KMgF 3 : Mn 2+ , K 2 SiF 6 : Mn 4+ , LaAl 3 B 4 0i 2 : Eu 3+ , LaAIB 2 0 6 : Eu 3+ , LaAIO 3 : Eu 3+ , LaAlO 3 : Sm 3+ , LaAsO 4 : Eu 3+ , LaBr 3 : Ce 3+ , LaB0 3 : Eu 3+ , (La, Ce, Tb) PO 4 : Ce: Tb, LaCl 3 : Ce 3+ , La 2 O 3
- LaSi0 3 Cl Ce 3+
- LaSi0 3 Cl Ce 3+
- Tb 3+ LaV0 4 : Eu 3+
- La 2 W 3 Oi 2 Eu 3+
- LiAIF 4 Mn 2+ , LiA! 5 O 8 : Fe 3+ , LiAlO 2 : Fe 3+ , LiAlO 2 : Mn 2+ , LiAl 5 O 8 : Mn 2+ ,
- MgAl 2 O 4 Mn 2+ , MgSrAl 10 Oi 7 : Ce, MgB 2 O 4 : Mn 2+ , MgBa 2 (PO 4 ) 2 : Sn 2+ , gBaP 2 0 7 : Eu 2+ , MgBaP 2 0 7 Eu 2+ , n 2+ , gBa 3 Si 2 O 8 : Eu 2+ ,
- MgBa (SO 4 ) 2 Eu 2+
- Mg 3 Ca 3 (PO 4 ) 4 Eu 2+
- MgCaP 2 O 7 Mn 2+
- Mg 3 SiO 3 F 4 Ti 4+ , MgS0 4 : Eu 2+ , MgSO 4 : Pb 2+ , MgSrBa 2 Si 2 O 7 : Eu 2+ ,
- MgSrP 2 O 7 Eu 2+
- MgSr 5 (PO 4 ) 4 Sn 2+
- MgSr 3 Si 2 O 8 Eu 2+ , Mn 2+ ,
- SrB 4 0 7 Eu 2+ (F, CI, Br), SrB 4 0 7 : Pb 2+ , SrB 4 0 7 : Pb 2+ , Mn 2+ , SrB 8 O 13 : Sm 2+ , Sr x Ba y Cl z AI 2 0 4-z / 2: Mn 2+, Ce 3+, SrBaSi0 4: Eu 2+, Sr (CI, Br, l) 2: Eu 2+ in SiO 2, SRCI 2: Eu 2+ in Si0 2 , Sr 5 Cl (PO 4 ) 3 : Eu, Sr w F x B 4 O 6 .
- Sr 5 (PO 4 ) 3 Cl Sb 3+ , Sr 2 P 2 O 7 : Eu 2+ , ⁇ -Sr 3 (PO 4 ) 2 : Eu 2+ , Sr 5 (PO 4 ) 3 F: Mn 2+ , Sr 5 (PO 4 ) 3 F: Sb 3+ , Sr 5 (PO 4 ) 3 F: Sb 3+ , Mn 2+ , Sr 5 (PO 4 ) 3 F: Sn 2+ , Sr 2 P 2 O 7 : Sn 2+ , ⁇ -Sr 3 (PO 4 ) 2 : Sn 2+ , ⁇ -Sr 3 (PO 4 ) 2 : Sn 2+ , Mn 2+ (Al), SrS: Ce 3+ , SrS: Eu + , SrS: Mn SrS: Cu + , Na, SrS0 4 : Bi, SrS0 4 : Ce 3+ , SrS0 4 : Eu + , SrS
- YAl 3 B 4 O 12 Eu 3+ , Cr 3+ , YAl 3 B 4 O 12 : Th 4+ , Ce 3+ , Mn + , YAlO 3 : Ce 3+ , Y 3 Al 5 O 12-Ce Y 3 Al 5 O 2 : Cr 3+, YAI0 3: Eu 3+, Y 3 Al 5 O 12: Eu 3r, Y4AI 2 0 9: Eu 3+, Y3AI 5 O 12: Mn 4+, YAI0 3: Sm 3+, YAI0 3: Tb 3+ , Y 3 Al 5 O 2 : Tb 3+ , YAsO 4 : Eu 3+ , YBO 3 : Ce 3+ , YBO 3 : Eu 3+ , YF 3 : Er 3+ , Yb 3+ , YF 3 : Mn 2+ , Th 4+ , YF 3 : Tm 3
- Y 2 0 3 Ce 3+, Tb 3+, YOCI: Ce 3+, YOCI: Eu 3+, YOF: Eu 3+, YOF: Tb 3+, Y 2 0 3: Ho 3+, Y 2 O 2 S: Eu 3+ , Y 2 O 2 S: Pr 3+ , Y 2 O 2 S: Tb 3+ , Y 2 O 3 : Tb 3+ , YPO 4 : Ce 3 ⁇
- YPO 4 Ce 3+ , Tb 3+ , YPO 4 : Eu 3+ , YPO 4 : Mn 2+ , Th 4+ , YPO 4 : V 5+ , Y (P, V) O 4 : Eu, Y 2 SiO 5 : Ce 3+ , YTaO 4) YTaO 4 : Nb 5+ , YVO 4 : Dy 3+ , YVO 4 : Eu 3+ , ZnAl 2 O 4 : Mn 2+ , ZnB 2 O 4 : Mn 2+ , ZnBa 2 S 3: Mn 2+, (Zn, Be) 2 Si0 4: Mn 2+, Zn 0.4 Cdo .6 S: Ag,
- Zn 0 .6Cdo .4 S Ag, (Zn, Cd) S: Ag, Cl, (Zn, Cd) S: Cu, ZnF 2 : Mn 2+ , ZnGa 2 O 4l ZnGa 2 O 4 : Mn 2+ , ZnGa 2 S 4 : Mn 2+ , Zn 2 Ge0 4 : Mn 2+ , (Zn, Mg) F 2 : n 2+ ,
- ZnMg 2 (P0 4 ) 2 Mn 2 ⁇ (Zn, Mg) 3 (PO 4 ) 2 : Mn 2+ , ZnO: Al 3+ , Ga 3 ⁇ ZnO: Bi 3+ ,
- Zn 2 SiO 4 Mn 2 ⁇ Zn 2 Si0 4 : Mn 2+ , As 5+ , Zn 2 Si0 4 : Mn, Sb 2 O 2 , Zn 2 SiO: Mn 2+ , P, Zn 2 Si0 4 : Ti 4 + , ZnS: Sn 2 ⁇ ZnS: Sn, Ag, ZnS: Sn 2+ , Li + , ZnS: Te, n, ZnS-ZnTe: Mn + , ZnSe: Cu + , Cl and ZnWO 4 .
- yellow and green emitting phosphors which can be combined with the compounds according to the invention are, for example, selected from the group consisting of
- the phosphors or phosphor combinations according to the invention can either be dispersed in a resin (for example epoxy or silicone resin) or, with suitable size ratios, be arranged directly on the primary light source or remotely located therefrom, depending on the application (the latter arrangement also includes the "remote phosphor technology” with).
- a resin for example epoxy or silicone resin
- the advantages of the "remote phosphor technology” are known in the art and z. For example, see the following publication: Japanese J. of Appl. Phys. Vol. 44, no. 21 (2005). L649-L651.
- the primary light source is installed at a central location and this is optically coupled to the phosphor by means of light-conducting devices, such as light-conducting fibers.
- the lighting requirements adapted lights can only be realized consisting of one or different phosphors, which can be arranged to form a luminescent screen, and a light guide, which is coupled to the primary light source realize.
- a strong primary light source at a convenient location for the electrical installation and to install without further electrical wiring, but only by laying fiber optics at any location lights of phosphors, which are coupled to the light guide.
- a lighting unit in particular for the backlight of display devices, characterized in that it contains at least one light source according to the invention, and a display device, in particular liquid crystal display device (LC display), with a backlight, characterized in that it contains at least one illumination unit according to the invention.
- a display device in particular liquid crystal display device (LC display)
- LC display liquid crystal display device
- the phosphors can also be converted into any external forms, such as spherical particles, platelets and structured materials and ceramics. According to the invention, these forms are combined under the term "shaped body.”
- the shaped body is preferably a "phosphor body”.
- Another object of the present invention is thus a molding containing the phosphors of the invention. Production and use of corresponding moldings is familiar to the person skilled in the art from numerous publications.
- Phosphors can also be used in the form of translucent ceramics, since in ceramic luminescence conversion screens the optical path length, ie the thickness of the ceramic layer, can be increased due to the reduced scattering compared to a powder layer.
- Another object of the present invention is therefore a ceramic containing at least one compound of the invention.
- the ceramic can only consist of the compound according to the invention. However, it can also contain matrix materials and / or further phosphors. Suitable matrix materials are, for example, S1O2, Y2O3 or Al2O3.
- the compounds according to the invention have a high photoluminescent quantum efficiency.
- the compounds of the invention have a high chemical stability.
- the phase formation of the samples was checked in each case by means of X-ray diffractometry.
- An X-ray diffractometer Miniflex II from Rigaku with Bragg-Brentano geometry was used for this purpose.
- Reflection spectra were determined with a fluorescence spectrometer from Edinburgh Instruments Ltd. The samples were placed in a BaS0 4 coated Ulbricht sphere and measured. Reflectance spectra were recorded in a range of 250 ... 800 nm. The white standard used was BaS0 4 (Alfa Aesar 99.998%). A 450 W Xe lamp served as the excitation source.
- the excitation spectra and emission spectra were recorded with a fluorescence spectrometer from Edinburgh Instruments Ltd, equipped with a mirror optics for powder samples.
- the excitation source used was a 450 W Xe lamp.
- the dry educt mixture was then calcined at 200 ° C for 8 h in Formiergasatmospreheat (5% H 2 /95% N 2 ).
- the mixture is first dried in air at room temperature and then at 80 ° C in a drying oven.
- the dry educt mixture was then calcined at 1200 ° C for 8 h in Formiergasatmospstone (5% H 2 /95% N 2 ).
- the mixture is first dried in air at room temperature and then at 80 ° C in a drying oven.
- the dry educt mixture was then calcined at 1200 ° C for 8 h in Formiergasatmospstone (5% H 2 /95% N 2 ).
- Example 5 Representation of Bao > 99Euo, oiCai, 5oSr 0> 4o no ; ioSi 3 0 9
- Bao , 99euo, oiCai, 5oSro, 4 oMno, ioSi 3 O9 are 2.3444 g (1.88 mmol) BaCO 3 , 0.7086 g (4.80 mmol) SrC0 3 , 0.0211 g (0.06 mmol ) Eu 2 O 3 , 1, 8016 g (18.00 mmol) CaCO 3 , 0.2148 g (1.20 mmol) MnC 2 O 4 -2H 2 O, 2.1630 g (36.00 mmol) SiO 2 and 0.0560 g (0.9051 mmol) of H 3 B0 3 in an agate mortar in acetone.
- the mixture is first dried in air at room temperature and then at 80 ° C in a drying oven.
- the dry educt mixture is then calcined at 1200 ° C for 8 h in Formiergasatmospstone (5% H 2 /95% N 2 ).
- Example 6 Representation of Bao ⁇ Euo.oiCai.so go ⁇ oMno.ioSiaOg
- Ba 0 , 99euo, oiCai, 5oMgo, 4 oMno, ioSi 3 0 9 are 2.3444 g (1.88 mmol) BaC0 3 , 0.4662 g (0.96 mmol) 4MgC0 3 » Mg (OH) 2 « 5H 2 0, 0.0211 g (0.06 mmol) Eu 2 0 3, 1, 8016 g (18.00 mmol) of CaC0 3, 0.2148 g (1, 20 mmol)
- Example 7 Production of a pc-LED using
- the near-UV semiconductor LEDs used in this example for LED characterization have an emission wavelength of 395 nm and are operated at 350 mA current.
- the light-technical characterization of the LED is carried out with a spectrometer from the company Instrument Systems - spectrometer CAS 140 and an associated integrating sphere ISP 250.
- the LED is characterized by determining the wavelength-dependent spectral power density. The spectrum thus obtained of the light emitted by the LED is used to calculate the color point coordinates CIE x and y.
- Example 8 Production of a pc-LED using
- Bao.TgSro.aoEuo.oiCa-i.goMno.ioSiaOg are weighed, mixed with 4 g of an optically transparent silicone and then in a
- the resulting silicone-phosphor mixture is applied by means of an automatic dispenser on the chip of a near-UV semiconductor LED and cured with heat.
- the near-UV semiconductor LEDs used in this example for LED characterization have an emission wavelength of 395 nm and are operated at 350 mA current.
- the light-technical characterization of the LED is carried out with a spectrometer from the company Instrument Systems - spectrometer CAS 140 and an associated integrating sphere ISP 250.
- the LED is characterized by determining the wavelength-dependent spectral power density.
- the spectrum thus obtained of the light emitted by the LED is used to calculate the color point coordinates CIE x and y.
- Bao , ggEuo , oiCai i5 oSro, 4 oMno, ioSi 3 0g are weighed, mixed with 4 g of an optically transparent silicone and then in a
- the resulting silicone-phosphor mixture is applied by means of an automatic dispenser on the chip of a near-UV semiconductor LED and cured with heat.
- the near-UV semiconductor LEDs used in this example for LED characterization have an emission wavelength of 395 nm and are operated at 350 mA current.
- the light-technical characterization of the LED is carried out with a spectrometer from the company Instrument Systems - spectrometer CAS 140 and an associated integrating sphere ISP 250.
- the LED is characterized by determining the wavelength-dependent spectral power density.
- the spectrum thus obtained of the light emitted by the LED is used to calculate the color point coordinates CIE x and y.
- Figure 1 powder X-ray diffractogram of Bao, ggEu 0, oiCai , 9oMno , ioSi 3 09 (top) and the reference card PDF-4 + (ICDD) 04-009-3303 of
- FIG. 5 shows powder diffractogram of Bao, g5Euo, o5Cai, goMn 0, IOSI Og 3 (above) and the reference map PDF-4 + (ICDD) 04-009-3303 Baca 2 Si 3 O 9 (below).
- FIG. 6 Reflection spectrum of Ba 0, 95Euo, o5Cai, 9 oMno , ioSi 3 0 9 .
- FIG. 9 Powder X-ray diffractogram of Bao, goEuo , ioCai , goMnO , ioSi 3 Og (top) and reference card PDF-4 + (ICDD) 04-009-3303 of FIG
- FIG. 11 Excitation spectrum of Bao, 9oEuo, ioCa i90 Mno , ioSi 3 Og
- FIG. 13 powder X-ray diffractogram of FIG
- FIG. 15 powder X-ray diffractogram of FIG
- Bao.ggEuo.oiCaLsoSro ⁇ oMno.ioSisOg (above) and the reference card 04-009- 3303 from BaCaSi 3 0 9 (below).
- FIG. 17 powder X-ray diffractogram of FIG.
- FIG. 19 Spectrum of the phosphor-converted LED described in Example 4.
- FIG. 20 Spectrum of the phosphor-converted LED described in Example 5.
- FIG. 21 Spectrum of the phosphor-converted LED described in Example 6.
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Abstract
Description
Claims
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JP2016514289A JP2016526071A (ja) | 2013-05-23 | 2014-04-30 | 蛍光体 |
CN201480029157.5A CN105264043B (zh) | 2013-05-23 | 2014-04-30 | 发光材料 |
EP14721768.1A EP2999767A1 (de) | 2013-05-23 | 2014-04-30 | Leuchtstoffe |
US14/892,796 US9920246B2 (en) | 2013-05-23 | 2014-04-30 | Phosphors |
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CN105733567B (zh) * | 2016-04-06 | 2017-10-31 | 河北大学 | 一种用于led的白光荧光粉及其制备方法 |
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CN112159213B (zh) * | 2020-10-29 | 2023-07-18 | 贵州赛义光电科技有限公司 | 一种零光衰发光陶瓷及其制备方法 |
CN113004028B (zh) * | 2021-03-02 | 2023-03-14 | 华中科技大学温州先进制造技术研究院 | 一种硅基低介微波介质陶瓷及其制备方法 |
CN114921244B (zh) * | 2022-05-24 | 2023-07-04 | 营口理工学院 | 一种纺锤棒状MgAl2O4:Tb3+荧光粉及制备方法 |
CN116904195B (zh) * | 2023-06-26 | 2024-05-28 | 武汉工程大学 | 一种三掺杂硅酸盐荧光粉材料及其制备方法和应用 |
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- 2014-04-30 KR KR1020157036150A patent/KR20160014661A/ko not_active Application Discontinuation
- 2014-04-30 JP JP2016514289A patent/JP2016526071A/ja active Pending
- 2014-04-30 CN CN201480029157.5A patent/CN105264043B/zh not_active Expired - Fee Related
- 2014-04-30 EP EP14721768.1A patent/EP2999767A1/de not_active Withdrawn
- 2014-04-30 WO PCT/EP2014/001162 patent/WO2014187530A1/de active Application Filing
- 2014-04-30 US US14/892,796 patent/US9920246B2/en not_active Expired - Fee Related
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SHANSHAN YAO ET AL: "Preparation and luminescent properties of BaCaSiO:Eu", OPTICS AND LASER TECHNOLOGY, ELSEVIER SCIENCE PUBLISHERS BV., AMSTERDAM, NL, vol. 43, no. 7, 14 March 2011 (2011-03-14), pages 1282 - 1285, XP028384707, ISSN: 0030-3992, [retrieved on 20110318], DOI: 10.1016/J.OPTLASTEC.2011.03.024 * |
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Publication number | Publication date |
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TW201504147A (zh) | 2015-02-01 |
CN105264043B (zh) | 2018-01-09 |
CN105264043A (zh) | 2016-01-20 |
US20160090529A1 (en) | 2016-03-31 |
KR20160014661A (ko) | 2016-02-11 |
JP2016526071A (ja) | 2016-09-01 |
EP2999767A1 (de) | 2016-03-30 |
US9920246B2 (en) | 2018-03-20 |
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