WO2014179366A8 - Annealing for damage free laser processing for high efficiency solar cells - Google Patents

Annealing for damage free laser processing for high efficiency solar cells Download PDF

Info

Publication number
WO2014179366A8
WO2014179366A8 PCT/US2014/035961 US2014035961W WO2014179366A8 WO 2014179366 A8 WO2014179366 A8 WO 2014179366A8 US 2014035961 W US2014035961 W US 2014035961W WO 2014179366 A8 WO2014179366 A8 WO 2014179366A8
Authority
WO
WIPO (PCT)
Prior art keywords
annealing
high efficiency
solar cells
laser processing
efficiency solar
Prior art date
Application number
PCT/US2014/035961
Other languages
French (fr)
Other versions
WO2014179366A1 (en
Inventor
Virendra V. Rana
Mehrdad M. Moslehi
Pawan Kapur
Rattle BENJAMIN
Heather DESHAZER
Solene COUTANT
Swaroop KOMMERA
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Publication of WO2014179366A1 publication Critical patent/WO2014179366A1/en
Publication of WO2014179366A8 publication Critical patent/WO2014179366A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.
PCT/US2014/035961 2013-04-29 2014-04-29 Annealing for damage free laser processing for high efficiency solar cells WO2014179366A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201361816830P 2013-04-29 2013-04-29
US61/816,830 2013-04-29
US201361827252P 2013-05-24 2013-05-24
US61/827,252 2013-05-24
US201361859166P 2013-07-26 2013-07-26
US61/859,166 2013-07-26

Publications (2)

Publication Number Publication Date
WO2014179366A1 WO2014179366A1 (en) 2014-11-06
WO2014179366A8 true WO2014179366A8 (en) 2015-04-16

Family

ID=51843905

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2014/035961 WO2014179366A1 (en) 2013-04-29 2014-04-29 Annealing for damage free laser processing for high efficiency solar cells

Country Status (1)

Country Link
WO (1) WO2014179366A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114765234B (en) * 2022-03-23 2024-04-02 山西潞安太阳能科技有限责任公司 Annealing enhancement back passivation method for P-type crystalline silicon double-sided battery

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8637340B2 (en) * 2004-11-30 2014-01-28 Solexel, Inc. Patterning of silicon oxide layers using pulsed laser ablation
US8115326B2 (en) * 2006-11-30 2012-02-14 Corning Incorporated Flexible substrates having a thin-film barrier
US8309446B2 (en) * 2008-07-16 2012-11-13 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
KR101072543B1 (en) * 2009-04-28 2011-10-11 현대중공업 주식회사 Method for sollar cell
KR101668402B1 (en) * 2011-03-30 2016-10-28 한화케미칼 주식회사 Method for manufacturing solar cell

Also Published As

Publication number Publication date
WO2014179366A1 (en) 2014-11-06

Similar Documents

Publication Publication Date Title
WO2011087610A3 (en) Conductivity improvements for iii-v semiconductor devices
MY168566A (en) Method for manufacturing crystalline silicon solar cell, method for manufacturing solar cell module, crystalline silicon solar cell, and solar cell module
JP2013153156A5 (en)
MX2016003561A (en) Metallization of solar cells using metal foils.
TW201613037A (en) Substrate for power modules, substrate with heat sink for power modules and power module with heat sink
JP2013153148A5 (en) Method for manufacturing semiconductor device
JP2017195367A5 (en) Flexible device fabrication method
CL2016002740A1 (en) Unions for the metallization of solar cells
WO2011123670A3 (en) Method and apparatus for improved wafer singulation
EP2595197A4 (en) Method for producing solar cell and film-producing device
MY181191A (en) Metal-foil-assisted fabrication of thin-silicon solar cell
JP2013042180A5 (en)
WO2016077587A3 (en) Creation of hyperdoped semiconductors with concurrent high crystallinity and high sub-bandgap absorptance using nanosecond laser annealing
PH12016502441B1 (en) Passivation of light-receiving surfaces of solar cells with crystalline silicon
JP2014107448A5 (en)
EP3029394A4 (en) Photovoltaic power generation device and method using optical beam uniformly condensed by using plane mirrors and cooling method by direct contact
WO2012032064A3 (en) Chalcopyrite-type semiconductor photovoltaic device
MY184451A (en) Processed silicon wafer, silicon chip, and method and apparatus for production thereof
CL2014001418A1 (en) Photovoltaic energy module that includes one or more photovoltaic cells, a semiconductor substrate that includes one or more bypass diodes formed integrally in the substrate and metallic areas that constitute a circuit, areas that are provided between the substrate and the cells, said areas electrically and thermally coupled to cells and diodes; and said semiconductor substrate; and method to develop a photovoltaic energy module
WO2011097056A3 (en) Solar cells and methods of fabrication thereof
WO2014044482A3 (en) Method for fabricating silicon photovoltaic cells
RU2015116526A (en) METHOD FOR PRODUCING A SUNNY ELEMENT
WO2013141700A3 (en) Method for manufacturing a solar cell
MY171609A (en) Laser etching a stack of thin layers for a connection of a photovoltaic cell
MY190307A (en) Solar cell, solar cell manufacturing system, and solar cell manufacturing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14791364

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14791364

Country of ref document: EP

Kind code of ref document: A1