WO2014129666A1 - 電子部品収納用パッケージおよび電子装置 - Google Patents
電子部品収納用パッケージおよび電子装置 Download PDFInfo
- Publication number
- WO2014129666A1 WO2014129666A1 PCT/JP2014/054590 JP2014054590W WO2014129666A1 WO 2014129666 A1 WO2014129666 A1 WO 2014129666A1 JP 2014054590 W JP2014054590 W JP 2014054590W WO 2014129666 A1 WO2014129666 A1 WO 2014129666A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic component
- metal
- recess
- storage package
- component storage
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Definitions
- the present invention is for housing electronic components for hermetically sealing electronic components such as acceleration sensor elements, infrared sensor elements, gyro sensor elements, crystal resonators, surface acoustic wave elements, and microelectromechanical system elements (MEMS elements).
- the present invention relates to a package and an electronic device.
- Electronic components such as an acceleration sensor element, an infrared sensor element, a gyro sensor element, a crystal resonator, a surface acoustic wave element, and a microelectromechanical system element (MEMS element) are hermetically sealed in a storage portion of an electronic component storage package.
- An electronic device is manufactured. Electronic devices are used as components in various electronic devices such as in-vehicle detectors, infrared detectors, and portable terminals. In such an electronic device, in order to protect or improve the function of the electronic component, it is required to reduce the amount of gas molecules present in the storage unit in which the electronic component is hermetically sealed.
- the getter material is provided, for example, as a component in which a metal powder that adsorbs a gas is heated and joined to a metal plate or the like.
- the metal powder as the getter material is bonded to each other at the contact interface. Further, the metal powder and the metal plate or the like are bonded to each other at the contact interface.
- the metal plate is bonded to the storage part of the electronic component storage package by a bonding material such as glass.
- JP-A-8-236660 Japanese Patent Laid-Open No. 2003-254820 Japanese Unexamined Patent Publication No. 2000-227920
- the metal powders and the metal powder and the metal plate are only joined together at the contact interface with each other. Is relatively small. For this reason, there is a problem that the metal powder as the getter material provided on the inner surface of the storage part of the electronic component storage package may spill or peel off.
- the getter material (metal powder) spilled or peeled off causes an electrical short circuit between the electrodes of the electronic component, or between the electrode of the electronic component and the wiring conductor provided in the electronic component storage package, etc. An electrical short circuit or the like may occur.
- the electronic component storage package is made of a ceramic sintered body, and is directly bonded to the recess, the substrate including the insulating base including the recess, and the wiring conductor provided on the insulating base. And a metal part made of a sintered body of a getter metal material.
- An electronic device includes the electronic component storage package having the above-described configuration and the electronic component accommodated in the recess.
- the strength of the sintered body itself made of the gettering metal material forming the metal part and the bonding strength between the metal part and the recess are higher than in the past. large. Therefore, it can suppress effectively that a part of metal part (getter property metal material) spills and peels.
- the electronic component storage package having the above-described configuration since the electronic component storage package having the above-described configuration is used, it is possible to effectively suppress the metal part from being spilled or peeled off. Therefore, gas molecules in the recess can be adsorbed by the metal portion, and an electronic device with high long-term reliability in electrical characteristics can be provided.
- FIG. 1A is a plan view showing an electronic component storage package and an electronic device according to a first embodiment of the present invention
- FIG. 1B is a sectional view taken along line AA in FIG.
- (A) is a top view which shows the electronic component storage package and electronic device of the 2nd Embodiment of this invention
- (b) is sectional drawing in the BB line of (a). It is sectional drawing which shows the modification in the principal part of the electronic component storage package and electronic device which are shown in FIG.
- (A) is a top view which shows the modification of the electronic component storage package and electronic device of the 2nd Embodiment of this invention, (b) is sectional drawing in CC line of (a).
- (A) is a top view which shows the modification of FIG. 5,
- (b) is sectional drawing in CC line of (a). It is sectional drawing which expands and shows the principal part of the electronic component storage package and electronic device which are shown in FIG.
- the insulating substrate 1 has, for example, a rectangular plate shape (a rectangular parallelepiped shape) and has an upper surface including the recess 2 as described above.
- the inner surface of the recess 2 has a recessed portion 4, and the metal portion 3 is provided in the recessed portion 4.
- the recess 2 includes a side surface and a bottom surface as inner surfaces, and the side surface has a stepped portion 2a.
- a wiring conductor 5 is provided on the upper surface of the stepped portion 2a.
- the wiring conductor 5 is formed by a metallized layer provided on the upper surface of the stepped portion 2a.
- the insulating base 1 and the wiring conductor 5 constitute a substrate part of an electronic component storage package.
- the indentation 4 is located on the side surface of the stepped portion 2a.
- the recessed portion 4 is a groove-shaped portion formed on the side surface of the stepped portion 2a so as to extend in the vertical direction.
- the concave portion 2 of the insulating base 1 is a portion forming a part of a container for hermetically sealing the electronic component 6.
- the recess 2 is closed by the lid 8.
- the electronic component 6 is hermetically sealed in a container composed of the recess 2 and the lid 8.
- An electronic device is formed by mounting the electronic component 6 on the electronic component storage package.
- the recess 2 has, for example, a square shape in plan view.
- the insulating substrate 1 is made of a ceramic material such as an aluminum oxide sintered body, a glass ceramic sintered body, a mullite sintered body, or an aluminum nitride sintered body.
- the insulating substrate 1 may be made of a resin material such as an epoxy resin or a polyimide resin, or a composite material of a resin material and an inorganic filler.
- the insulating base 1 is made of, for example, an aluminum oxide sintered body, it can be manufactured by a manufacturing method such as a ceramic green sheet lamination method. That is, a raw material powder such as aluminum oxide and silicon oxide can be formed into a sheet shape together with an additive such as an organic binder to produce a plurality of ceramic green sheets, which can be laminated and fired. In this case, if the ceramic green sheet laminated on the upper part is formed into a frame shape by a method such as punching, the insulating substrate 1 having the recess 2 on the upper surface can be manufactured.
- a manufacturing method such as a ceramic green sheet lamination method. That is, a raw material powder such as aluminum oxide and silicon oxide can be formed into a sheet shape together with an additive such as an organic binder to produce a plurality of ceramic green sheets, which can be laminated and fired.
- the ceramic green sheet laminated on the upper part is formed into a frame shape by a method such as punching, the insulating substrate 1 having the recess 2 on
- the concave portion 2 of the insulating base 1 is a portion in which the electronic component 6 is accommodated as described above. Therefore, the recess 2 is provided in a shape and size (size, depth, etc. in plan view) suitable for the shape and size of the electronic component 6.
- the electronic component 6 include an acceleration sensor element, an infrared sensor element, a gyro sensor element, and a piezoelectric element (including a crystal resonator).
- These electronic components 6 may be those having a fine electromechanical mechanism on the surface of a semiconductor substrate, so-called microelectromechanical system elements (MEMS elements).
- the metal part 3 is for adsorbing gas molecules present in the container including the recess 2, and is made of a sintered body of a getter metal material directly joined to the recess 2.
- the gas molecules in the container adsorbed by the metal part 3 include gases generated from members constituting the electronic device such as the insulating base 1 and the lid 8 during the manufacture and use of the electronic device, and the electronic device Examples thereof include gas molecules such as moisture (H 2 O) entering from the outside during the production.
- the metal part 3 is formed by, for example, simultaneously firing a metal paste with the insulating substrate 1 (a laminate of a plurality of ceramic green sheets). Details of the metal part 3 will be described later.
- the wiring conductor 5 is a conductive path for electrically connecting the electronic component 6 to an external electric circuit (not shown), for example. Therefore, the wiring conductor 5 has a portion that is electrically connected to the electronic component 6.
- One end of the wiring conductor 5 in the electronic component storage package of the first embodiment is located in the recess 2, and the electronic component 6 is electrically connected to the one end via the conductive connecting member 7. Yes.
- a portion (for example, the other end portion) (not shown) other than one end portion of the wiring conductor 5 is electrically led to an outer surface such as a side surface or a lower surface of the insulating base, and this portion is electrically connected to an external electric circuit. Connected.
- Such a wiring conductor 5 may include internal conductors (not shown) such as internal wiring and via conductors in the insulating base 1 in addition to the portion shown in FIG.
- the wiring conductor 5 is a metallized layer formed of a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, platinum, gold, nickel, cobalt, or titanium. These metal materials are deposited on the surface of the insulating substrate 1 in the form of, for example, a plating layer or a vapor deposition layer in addition to the metallized layer.
- a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, platinum, gold, nickel, cobalt, or titanium.
- the wiring conductor 5 includes a tungsten metallized layer
- a ceramic green sheet that becomes the insulating substrate 1 by a method such as screen printing using a metal paste prepared by kneading tungsten metal powder together with an organic solvent and a binder. It can be formed by printing on the surface and co-firing.
- the side surface of the recess 2 has the stepped portion 2a as described above, and the wiring conductor 5 is provided on the upper surface of the stepped portion 2a.
- the wiring conductor 5 is provided on the upper surface of the stepped portion 2a, for example, the connection part (electrode or the like) of the electronic component 6 provided on the upper surface of the electronic component 6 and the wiring conductor 5 are close to each other, The electrical connection between the two is easily performed with a low resistance.
- a bonding wire is used as the conductive connecting material 7.
- the bonding wire is made of gold, aluminum, or the like, and is connected to the wiring conductor 5 and the electronic component 6 (electrode, etc.) by a wedge bond or a ball bond.
- the lid body 8 is joined to the insulating substrate 1 via a joining material (no symbol).
- a joining material a metal material such as Au, Ag, Zn, Sn, or Cu, or an alloy of these metal materials as a main component can be used.
- the lid 8 examples include an insulating material such as a ceramic material or a glass material, a metal material, or silicon. If the lid 8 is made of an insulating material, it is preferable that the lid 8 has a metallized layer (not shown) formed on the bonding surface to the insulating substrate 1. In this case, a metallized layer (no symbol) is also provided at a portion where the lid 8 on the upper surface of the insulating substrate 1 is joined. If the lid 8 is made of a ceramic material, for example, an aluminum oxide sintered body, a mullite sintered body, or the like is used.
- the metal portion 3 is provided in the recess 2 as described above.
- the metal part 3 is located in the recessed part 4.
- the metal part 3 is provided in the recess 2.
- the metal portion 3 is made of a sintered body of a getter metal material that is directly bonded to the inner surface of the recess 2.
- the metal portion 3 is provided in the groove-like recess portion 4 provided on the side surface of the stepped portion 2a. Yes.
- the metal part 3 is made of a getter-type metal material, gas molecules in a container (between the recess 2 and the lid 8) in which the electronic component 6 is sealed are adsorbed by the metal part 3. Therefore, the degree of vacuum in the container can be improved. Therefore, it is easy to improve the reliability and function of the electronic component 6 (the electronic component 6 hermetically sealed in the electronic device) accommodated in the container.
- the gettering metal material becomes a sintered body by filling the indented portion 4 provided on the side surface of the stepped portion 2a with an unfired gettering metal material and firing it.
- At least one component of the ceramic of the insulating base 1 constituting the body and the inner surface of the recess 2 diffuses to the other at the interface and in the vicinity of the interface, and is bonded to each other. Therefore, the metal part 3 made of a sintered body of a getter metal material is firmly held on the inner surface of the recess 2 and hardly peels off. Further, since the metal part 3 itself is neck-bonded with gettering metal materials, a part of the metal part 3 is not easily spilled off.
- the metal part 3 is embedded in the hollow part 4 (groove-like part) located on the side surface of the stepped part 2a, the space in the concave part 2 is used more effectively for storing the electronic component 6. be able to. In other words, it is possible to provide an electronic component storage package and an electronic device that have the metal portion 3 in the recess 2 and are advantageous in terms of miniaturization.
- FIG. 2 is an enlarged cross-sectional view showing the main parts of the electronic component storage package and the electronic device shown in FIG. In FIG. 2, the same parts as those in FIG. In the sintered body of the getter metal material forming the metal part 3, for example, particles of the getter metal material are sintered and integrated, and directly joined to the inner surface of the recess 2.
- the metal part 3 is a sintered body of a getter metal material directly joined to the recess 2, the strength of the getter metal material itself forming the metal part 3, and the metal part 3 and the recess 2. Bonding strength with is greater than in the past.
- an electronic device with high long-term reliability in electrical characteristics can be provided.
- the insulating base 1 constituting the inner surface of the recess 2 and the metal part 3 are diffusion-bonded, mutual diffusion of mutual components (aluminum oxide and a metal material such as titanium described later) occurs between the two. Also good. In this case, the bonding strength between the insulating base 1 and the metal part 3 is improved, and the peeling of the metal part 3 from the insulating base 1 can be more effectively suppressed.
- the diffusion of the components in the interface between the insulating base 1 and the metal part 3 and in the vicinity of the interface may be from either one to the other.
- the aluminum oxide component of the insulating base 1 may be diffused in the metal part 3, and the material of the metal part 3 (titanium or the like described later) may be diffused in the insulating base 1.
- the getter metal material forming the metal portion 3 provided on the inner surface of the recess 2 can adsorb gas molecules as described above effectively, and is a chemically active metal material. Specific examples include titanium (Ti), zirconium (Zr), iron (Fe), and vanadium (V).
- a metal powder containing at least one of these metal materials as a main component is kneaded together with an organic solvent and a binder to produce a metal paste, and this metal paste is used on the surface of the ceramic green sheet (recessed portion 2 of the recess 2). If it is applied to the inner surface) and fired together with the ceramic green sheet or the like, the gettering metal material adheres to the inner surface of the recess 2 and the metal part 3 made of a sintered body of the gettering metal material is formed in the recess 2. It is directly bonded to the inner surface.
- the metal paste is applied to the ceramic green sheet by a printing method such as a screen printing method.
- a groove portion that becomes the groove-like indented portion 4 is provided by a method such as mechanical punching or grinding, or laser processing at a portion that becomes the side surface of the stepped portion 2a.
- a metal paste that becomes the metal part 3 may be printed and filled in the groove part and simultaneously fired.
- a through hole is provided at a position that is the inner periphery of the stepped portion 2a of the concave portion 2, and the metal paste is filled in the through hole. Punching may be performed from
- a hole is formed in the green sheet, the hole is filled with a metal paste mainly composed of a getter metal material, and the metal paste is dried in an oven or the like.
- the step portion 2a is formed by punching the green sheet and the metal paste so as to cut through the hole in which the metal paste is embedded, so that the metal paste is exposed on the side surface of the step portion 2a.
- the punching may be processed using a mold, a laser, or the like.
- the space in the concave part 2 can be effectively used for storing the electronic component 4A. Further, it is advantageous in increasing the bonding strength by increasing the bonding area between the metal portion 3A and the insulating base 1. Therefore, it is more effective for downsizing the electronic component storage package or the like.
- the insulating base 1 may be provided with a heating part (not shown) that heats the metal part 3 located on the inner surface of the recess 2. This is because when an oxide film or the like is formed on the surface of the getter metal material forming the metal portion 3, the oxide film can be effectively removed by heating. Thereby, the effect of adsorbing gas molecules by the metal part 3 can be improved.
- the heating temperature is preferably 250 to 500 ° C.
- the above heating unit is, for example, an electric heater that generates resistance.
- the electric heater can be provided on the insulating base 1 by a method similar to that of the wiring conductor 5 using a material having a relatively high electrical resistance (resistivity) such as tungsten among metal materials used as the wiring conductor 5.
- a connection conductor (not shown) for supplying a current to the electric heater from an external power source may be provided on the insulating base 1 or the like.
- the connection conductor can be formed by the same method using, for example, the same metal material as that of the wiring conductor 5.
- heating may be performed simultaneously with reflow when the element is mounted on the concave surface.
- the lid When the lid is transparent, it may be heated with a laser after sealing.
- the metal part 3 preferably has a larger volume. However, when the volume of the metal part 3 is increased, the storage space for the electronic component 6 in the recess 2 is reduced. On the other hand, when the electronic component 6 having a certain size is accommodated, there is a possibility that it is difficult to reduce the size of the recess 2, that is, the size of the electronic component storage package and the electronic device. Considering such conditions, productivity, cost and the like, it is more preferable that the metal part 3 is entirely contained in the recessed part 4 on the side surface of the stepped part 2a.
- FIG. 1 can be regarded as an example in which the metal part 3 is housed in the indentation part 4.
- the space in the recessed portion 4 is more effectively used for the arrangement of the metal portion 3. Therefore, for example, downsizing as an electronic component storage package and an electronic device can be facilitated.
- the recessed part 4 does not necessarily have to be filled with the metal part 3.
- the metal part 3 may be provided in layers along the inner peripheral surface of the groove (recess 4). . Since the ratio of the bonding area between the metal part 4 and the inner peripheral surface of the groove (recessed part 4) is higher than the volume of the metal part 4, the bonding reliability of the metal part 4 to the insulating substrate 1 is high.
- the recessed portion 4 is located on the side surface of the stepped portion 2 a included in the side surface of the recessed portion 2, and the metal portion 3 is located in the recessed portion 4.
- a part of the stepped portion 2 a is formed by the metal portion 3. Therefore, the area of the electronic component storage package and the electronic device in a plan view including the stepped portion 2a can be reduced, and the electronic component storage package and the electronic device advantageous for downsizing can be obtained.
- the metal part 3 may be provided from the inside of the recessed part 4 to the inner surface such as the side surface or the bottom surface of the recess 2. In this case, the bonding area between the metal part 3 and the inner surface of the recess 2 is increased, and the bonding strength between them can be improved. Moreover, the volume of the gas which can adsorb
- the recessed part 4 is large in the range which can prevent the electrical short circuit with the wiring conductor 5 and the metal part 3 which are provided in the upper surface of the step-shaped part 2a.
- the size of the indentation part 4 means, for example, the volume of the space between the opening part and the inner surface of the indentation part 4 in the groove-like indentation part 4.
- the indentation portion 4 becomes larger if the radius is increased.
- the distance between the indented portion 4 and the wiring conductor 5 may be a distance within a range in which electrical insulation between the metal portion 3 in the indented portion 4 and the wiring conductor 5 is favorably secured.
- the recessed portion 4 is located on the side surface of the stepped portion 2a.
- the indentation 4 is preferably located at the corner of the upper surface of the polygonal frame. In this case, it is advantageous in terms of securing electrical insulation between the wiring conductor 5 and the metal part 3. This is due to the relatively large space between the wiring conductors 5 at the corners on the top surface.
- the dimension of the metal part 3 (for example, the radius etc. of the fan-shaped metal part 3) may be comparatively large in the corner
- the metal portion 3 is made porous (a large number of holes on the surface, that is, It is preferable to have a void).
- the size of the hole is 10 to 150 ⁇ m, and it is assumed that the adsorbed gas molecules can easily pass through.
- the degree of porosity is preferably such that it does not short-circuit (not chipped) when an impact or the like is applied, and preferably has a gap of about 30 to 60% of the volume of the metal part 3. .
- an organic substance that does not dissolve in the binder and its solvent and remains as a solid may be added to the metal paste forming the metal part 3.
- the organic material is preferably an organic material that is not vaporized during firing, such as polypropylene polymer, ammonium carbamate, and a highly degradable acrylic binder.
- the organic material is vaporized in the course of firing, whereby a void is formed in the metal part 3.
- a void may be formed by mixing a foaming material such as carbonates or a vinyl compound in the binder and generating gas during firing.
- FIG. 3A is a plan view showing an electronic component storage package and an electronic apparatus according to a second embodiment of the present invention
- FIG. 3B is a cross-sectional view taken along the line BB of FIG. is there.
- the same parts as those in FIG. Also in FIG. 3A, the electronic components and the lid are omitted for easy viewing.
- the metal portion 3A is provided on the bottom surface of the recess 2.
- the side surface of the recess 2 does not have a stepped portion.
- the wiring conductor 5 ⁇ / b> A is a metallized layer such as tungsten, and is provided on the bottom surface of the recess 2.
- a substrate portion is formed by the insulating base 1 and the wiring conductor 5A (metallized layer).
- the conductive connecting material 7A that electrically connects the electronic component 6A and the wiring conductor 5A is an adhesive such as a conductive adhesive.
- the electronic component 6A hermetically sealed in the electronic component storage package of the second embodiment is a piezoelectric element such as a crystal resonator element.
- An electronic device in which an electronic component 6A such as a piezoelectric element is hermetically sealed in an electronic component storage package is a piezoelectric device such as a crystal oscillator. Except for these points, the electronic component storage package and electronic device of the second embodiment are the same as the electronic component storage package and electronic device of the first embodiment. A description of this similar point will be omitted in the following description.
- the metal part 3A in this case can also be provided by the same method using the same gettering metal material as in the first embodiment.
- printing of a metal paste (titanium or the like) is performed on the portion of the ceramic green sheet that will be the insulating substrate 1 that will be the bottom surface of the recess 2.
- the wiring conductor 5A is provided on the bottom surface of the recess 2 at a position facing an electrode provided on a corner portion or the like of the main surface of the electronic component 6A that is a piezoelectric element or the like.
- the electrode of the electronic component 6A and the wiring conductor 5A face each other and are electrically and mechanically connected to each other via the conductive connecting material 7A such as a conductive adhesive.
- the electronic component 6A housed in the concave portion 2 is electrically connected to the wiring conductor 5A, and the concave portion 2 is closed by the lid 8, so that an electronic device such as a crystal oscillator is formed.
- the metal portion 3A made of a getter metal material is provided on the inner surface of the recess 2, so that the gap between the recess 2 and the lid 8 is provided.
- the gas molecules in the container formed in the above can be effectively adsorbed by the metal portion 3A. Therefore, an electronic device having a high degree of vacuum in the container and excellent functions such as oscillation by the crystal resonator element can be manufactured.
- the metal portion 3A is made of a sintered body of a getter metal material.
- the sintered body is formed by simultaneous firing with the insulating base 1, it is possible to effectively suppress the metal portion 3A from being partially peeled from the insulating base 1.
- the sintered body of the gettering metal material forming the metal part 3 is obtained by sintering and integrating the particles of the gettering metal material and neck-joining the gettering metal materials. Some are difficult to spill.
- the metal portion 3A provided on the bottom surface of the recess 2 has a function of suppressing mechanical destruction of the crystal resonator as the electronic component 6A mounted in the recess 2 (function as a so-called pillow material portion). is doing.
- the piezoelectric diaphragm quartz vibration element as the electronic component 6A
- the piezoelectric diaphragm is provided to prevent damage.
- the deflection width of the piezoelectric diaphragm can be reduced by the metal part 3 as the pillow part. Therefore, the piezoelectric diaphragm is prevented from hitting the bottom surface of the recess 2 or the like.
- the pillow material portion by replacing the pillow material portion with a gettering metal material, it is difficult to peel off, and the space in the cavity (recess 2) can be effectively utilized. Packages and electronic devices can be obtained.
- FIG. 4 is a cross-sectional view showing a modification of the main part of the electronic component storage package and the electronic device shown in FIG. 4, parts similar to those in FIG. 3 are denoted by the same reference numerals.
- the bottom surface of the recess 2 has a recessed portion 4A.
- the metal portion 3A does not entirely enter the recessed portion 4A, but includes a portion that protrudes outward from the recessed portion 4A.
- the recessed portion 4A is filled with a part of the metal portion 3A, and the other metal portion 3A is located outside the recessed portion 4A.
- the metal portion 3A is provided on the inner surface of the recess 2, gas molecules in the container can be effectively adsorbed by the metal portion 3A.
- the space in the recess 2 (container) is the same as in the first embodiment. Can be effectively used for storing the electronic component 4A. Further, it is advantageous in increasing the bonding strength by increasing the bonding area between the metal portion 3A and the insulating base 1.
- the metal portion 3A has a two-layer structure of a lower stage and an upper stage (no symbol).
- a metal paste of a getter metal material that becomes the metal portion 3A is printed in two portions. Therefore, since the printing thickness of the metal paste per time can be kept small, printing is easy and workability is high. Moreover, since each printing thickness is comparatively thin, the malfunction that the printed metal paste peels off accidentally is suppressed more effectively. In other words, it is easy to form the metal portion 3A as a pillow material portion having a relatively high height.
- FIG. 5A is a plan view showing a modification of the electronic component storage package and the electronic device according to the second embodiment of the present invention
- FIG. 5B is a cross-sectional view taken along the line CC in FIG. 5A. It is sectional drawing. 5, parts similar to those in FIGS. 1 and 3 are denoted by the same reference numerals.
- the lid is omitted for easy viewing.
- the metal part 3B is provided on the bottom surface of the recess 2. Moreover, the side surface of the recessed part 2 does not have a step part.
- the wiring conductor 5 ⁇ / b> B is provided on the bottom surface of the recess 2.
- the conductive connecting material 7B that electrically connects the electronic component 6 and the wiring conductor 5B is, for example, a brazing material such as solder or an adhesive material such as a conductive adhesive.
- the electronic component 6B hermetically sealed in the electronic component storage package of this modification is, for example, a semiconductor element in which a plurality of electrodes are arranged on the main surface of an electronic component main body (no symbol).
- the semiconductor element is a semiconductor integrated circuit element (IC), an optical semiconductor element, a semiconductor sensor element (including a so-called MEMS element), or the like.
- the electronic component 6B is accommodated in the recess 2 by so-called flip chip mounting in which the main surface on which the electrodes are arranged is mounted downward.
- An electronic device in which an electronic component 6B such as a semiconductor element is hermetically sealed in the electronic component storage package is a semiconductor device (semiconductor device), a sensor device, an imaging device, a light emitting device, or the like. Except for these points, the electronic component storage package and electronic device of this modification are the same as the electronic component storage package and electronic device of the first and second embodiments. A description of this similar point will be omitted in the following description.
- the metal part 3B is provided on the bottom surface of the recess 2 in the same manner as the metal part 3A in the second embodiment, but the arrangement form is a frame surrounding the mounting part of the electronic component 6B to be flip-chip mounted in a plan view. It has become a shape. That is, for example, the same metal material paste as in the second embodiment is printed on the main surface of the ceramic green sheet to be the insulating base 1 in a region surrounding the mounting portion of the electronic component 6B on the insulating base 1.
- the metal portion 3B is provided by simultaneous firing.
- the wiring conductor 5B is provided on the bottom surface of the recess 2 at a position facing an electrode provided in the form of a vertical and horizontal arrangement on the main surface of the electronic component 6B to be flip-chip mounted.
- the electrode of the electronic component 6B and the wiring conductor 5B face each other and are electrically and mechanically connected to each other via the conductive connecting material 7B such as tin-silver solder.
- the electronic component 6B accommodated in the concave portion 2 is electrically connected to the wiring conductor 5B, and the concave portion 2 is closed by the lid 8, so that an electronic device such as a semiconductor device is formed.
- the metal portion 3B made of a sintered body of a getter metal material is provided on the inner surface of the recess 2, the recess 2 and the lid 8 Gas molecules in the container formed during the period can be effectively adsorbed by the metal part 3B. Therefore, an electronic device having a high degree of vacuum in the container and excellent in long-term reliability of an IC or detection accuracy of a physical quantity such as acceleration by a sensor element (MEMS element) can be manufactured.
- MEMS element sensor element
- the metal part 3B is formed of a sintered body of a getter metal material, so that the metal part 3B constitutes the inner surface of the recess 2. Partial peeling off from the substrate 1 can be effectively suppressed.
- the getter metal material may be formed by bonding with the insulating base 1 by simultaneous firing, whereby the bonding strength between the metal portion 3B and the insulating base 1 is further improved.
- the metal part 3B in this modification has a function of suppressing the resin material from flowing out when a resin material (so-called underfill) is filled between the electronic component 6B and the bottom surface of the recess 2, for example. (Function as a so-called dam).
- the metal part 3B also has the function, which is advantageous in terms of downsizing and improvement in productivity. obtain.
- FIG. 6 (a) is a plan view showing a modification of FIG. 5, and FIG. 6 (b) is a cross-sectional view taken along the line CC of FIG. 6 (a).
- FIG. 7 is an enlarged cross-sectional view showing a main part of FIG. 6 and 7, the same parts as those in FIGS. 1 to 5 are denoted by the same reference numerals. Also in FIG. 6A, the lid is omitted for easy viewing.
- the metal part 3 is provided on the metallized layer 9 provided on the bottom surface of the recess 2.
- the points A description of the same points as in the example of FIG. 5 will be omitted.
- the metallized layer 9 provided on the bottom surface of the recess 2 has a relatively large area, for example, for grounding.
- the insulating base 1, the wiring conductor 5 ⁇ / b> B, and the metallized layer 9 on the bottom surface of the recess 2 constitute a substrate portion.
- the metal part 3 made of a sintered body of a getter metal material is interdiffused with the metallized layer 9 and joined to the metallized layer 9.
- the metal portion 3B is made of a sintered body of a getter metal material directly bonded to the metallized layer 9 provided on the inner surface of the recess 2, so that the metal portion The peeling of 3B from the metallized layer 9 can be effectively suppressed.
- the getter metal material may be formed by simultaneous firing of the metallized layer 9 and the insulating base 1, thereby increasing the bonding strength between the metal part 3B and the substrate part (metallized layer 9). Further improve.
- the getter metal material is formed by simultaneous firing of the metallized layer 9 and the insulating substrate 1, the bonding strength between the metal part 3B and the substrate part (metallized layer 9) is further improved. In this case, as in the above example, any one component diffuses between the insulating base 1 and the metal part 3 to the other.
- the diffusion of the components of the metal part 3 and the metallized layer 9 may be from one to the other.
- a component such as tungsten in the metallized layer 9 may be diffused in the metal part 3, and the material of the metal part 3 (such as titanium described above) may be diffused in the metallized layer 9.
- the electronic component storage package and the electronic device according to the present invention are not limited to the examples and modifications of the above embodiments, and various modifications are possible within the scope of the gist of the present invention.
- the recess 4 is not limited to the example shown in FIG. 1, and may be located on the bottom surface of the recess 2, or may be provided on the side surface of the recess 2 that does not have the stepped portion 2 a.
- a plurality of forms may be combined.
- a recess (not shown) is provided on the bottom surface of the recess 2 in addition to the side of the step 2a.
- a metal part (not shown) may be positioned.
- the metal part 3 may not fill the hollow part 4.
- it may be in a form (castellation-like form) (not shown) in which a metal part (not shown) adheres in layers along the surface of the groove-like depression 4 as shown in FIG. .
- a part of the metal part 3 may protrude outside the recessed part 4. In this case, it is advantageous in increasing the volume of the metal part 3 present in the recess 2.
- the metal part 3 may be provided in several surfaces, such as a side surface and a bottom face, and also the side surface of a stepped part among the inner surfaces of the recessed part 2, and the hollow part 4 may be provided in each surface. .
- the metal portion 3 may be provided as an alignment mark when the electronic component 6 is accommodated in the recess 2 or as an index mark when the wiring conductor 5 and the electronic component 6 are electrically connected. . Further, the metal part 3 may be simply provided on the inner surface such as the side surface of the recess 2. In this case, the metal part 3 is provided at a position (such as a side surface of the recess 2) where electrical insulation between the wiring conductor 5 and the electronic component 6 and the metal part 3 is ensured.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
図1(a)は本発明の第1の実施形態の電子部品収納用パッケージおよび電子装置を示す平面図であり、図1(b)は図1(a)のA-A線における断面図である。凹部2を含む絶縁基体1と、絶縁基体1に設けられた配線導体5と、凹部2内に直接接合された金属部3とによって電子部品収納用パッケージが基本的に構成されている。なお、図1(a)においては見やすくするために後述する電子部品および蓋体を省略している。
凹部2の内表面を構成する絶縁基体1と金属部3とが拡散接合している場合、両者間で互いの成分(酸化アルミニウムおよび後述するチタン等の金属材料等)の相互拡散が生じていてもよい。この場合には、絶縁基体1と金属部3との間の接合の強度が向上して、絶縁基体1からの金属部3の剥がれがより効果的に抑制され得る。
2・・・・凹部
3(A、B)・・・金属部
4(A)・・・・・くぼみ部
5(A、B)・・・配線導体
6(A、B)・・・電子部品
7(A、B)・・・導電性接続材
8・・・・蓋体
9・・・(凹部の底面の)メタライズ層
Claims (13)
- セラミック焼結体からなり、凹部を含む絶縁基体と、該絶縁基体に設けられた配線導体とを含む基板部と、
前記凹部に直接接合されたゲッター性金属材の焼結体からなる金属部と、を備えていることを特徴とする電子部品収納用パッケージ。 - 前記凹部の内表面にくぼみ部を有しており、
前記金属部が前記くぼみ部内に位置していることを特徴とする請求項1に記載の電子部品収納用パッケージ。 - 前記金属部の全部が前記くぼみ部内に収まっていることを特徴とする請求項2に記載の電子部品収納用パッケージ。
- 前記金属部が前記くぼみ部内から前記内表面にわたって設けられていることを特徴とする請求項2に記載の電子部品収納用パッケージ。
- 前記凹部の内表面が、側面と底面とを含み、前記側面が段状部を有しており、
前記くぼみ部が前記段状部の側面に設けられていることを特徴とする請求項2~請求項4のいずれかに記載の電子部品収納用パッケージ。 - 前記配線導体が前記段状部の上面に設けられており、平面視において、前記段状部の前記上面が多角形の枠状であるとともに、前記くぼみ部が前記上面の角部に位置していることを特徴とする請求項5記載の電子部品収納用パッケージ。
- 前記凹部の内表面が、側面と底面とを含み、前記金属部が前記凹部の底面に設けられていることを特徴とする請求項1~請求項6のいずれかに記載の電子部品収納用パッケージ。
- 前記凹部の前記底面が電子部品の搭載部を含んでおり、
前記金属部が、前記凹部の前記底面に前記搭載部を囲んで設けられていることを特徴とする請求項7記載の電子部品収納用パッケージ。 - 前記金属部は前記凹部の内表面と直接接合されていることを特徴とする請求項1~請求項8のいずれかに記載の電子部品収納用パッケージ。
- 前記金属部と前記凹部の前記内表面との界面近傍において、前記金属部および前記凹部の前記内表面のうち少なくとも一方の成分が他方にあることを特徴とする請求項9に記載の電子部品収納用パッケージ。
- 前記金属部は前記凹部の内表面に設けられたメタライズ層と直接接合されていることを特徴とする請求項1~請求項8のいずれかに記載の電子部品収納用パッケージ。
- 前記金属部と前記メタライズ層との界面近傍において、前記金属部および前記メタライズ層のうち少なくとも一方の成分が他方にあることを特徴とする請求項9に記載の電子部品収納用パッケージ。
- 請求項1~請求項12のいずれかに記載の電子部品収納用パッケージと、
前記凹部内に収容された電子部品と、を備えることを特徴とする電子装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015501548A JP6154458B2 (ja) | 2013-02-25 | 2014-02-25 | 電子部品収納用パッケージおよび電子装置 |
EP14753751.8A EP2960935B1 (en) | 2013-02-25 | 2014-02-25 | Package for housing an electronic component and electronic device |
US14/758,334 US9756731B2 (en) | 2013-02-25 | 2014-02-25 | Package for housing electronic component and electronic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013034689 | 2013-02-25 | ||
JP2013-034689 | 2013-02-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014129666A1 true WO2014129666A1 (ja) | 2014-08-28 |
Family
ID=51391442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/054590 WO2014129666A1 (ja) | 2013-02-25 | 2014-02-25 | 電子部品収納用パッケージおよび電子装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9756731B2 (ja) |
EP (1) | EP2960935B1 (ja) |
JP (1) | JP6154458B2 (ja) |
WO (1) | WO2014129666A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9887687B2 (en) * | 2015-01-28 | 2018-02-06 | Analog Devices Global | Method of trimming a component and a component trimmed by such a method |
US10497682B2 (en) * | 2016-01-12 | 2019-12-03 | Apple Inc. | Backplane LED integration and functionalization structures |
KR102173099B1 (ko) * | 2016-09-14 | 2020-11-02 | 구글 엘엘씨 | 로컬 진공 캐비티를 사용한 양자 장치들에서의 소산 및 주파수 노이즈 감소 |
US10474027B2 (en) * | 2017-11-13 | 2019-11-12 | Macronix International Co., Ltd. | Method for forming an aligned mask |
CN111584371B (zh) * | 2020-05-25 | 2022-04-01 | 苏州融睿电子科技有限公司 | 一种封装壳体的制作方法、封装壳体 |
US20230077877A1 (en) * | 2021-09-10 | 2023-03-16 | Advanced Semiconductor Engineering, Inc. | Photonic package and method of manufacturing the same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128291A (en) * | 1977-04-14 | 1978-11-09 | Citizen Watch Co Ltd | Crystal vibrator |
JPH08236660A (ja) | 1994-12-27 | 1996-09-13 | Corning Inc | 気密シ−ルされた電子パッケ−ジ |
JP2000227920A (ja) | 1999-02-05 | 2000-08-15 | Nippon Telegr & Teleph Corp <Ntt> | 情報フィルタリング方法及び装置並びに情報フィルタリングプログラムを記録した記録媒体 |
JP2003254820A (ja) | 2002-03-05 | 2003-09-10 | Mitsubishi Electric Corp | 赤外線検出器 |
JP2006086585A (ja) * | 2004-09-14 | 2006-03-30 | Daishinku Corp | 表面実装型圧電振動デバイス |
WO2010010721A1 (ja) * | 2008-07-25 | 2010-01-28 | 日本電気株式会社 | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 |
JP2010040767A (ja) * | 2008-08-05 | 2010-02-18 | Olympus Corp | 気密封止パッケージ |
WO2013008919A1 (ja) * | 2011-07-14 | 2013-01-17 | 株式会社東芝 | セラミックス回路基板 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1201540B (it) * | 1986-12-22 | 1989-02-02 | Getters Spa | Dispositivo getter non evaporabile comprendente un supporto ceramico e metodo per la sua fabbricazione |
WO2004074210A1 (ja) * | 1992-07-03 | 2004-09-02 | Masanori Hirano | セラミックス-金属複合体およびその製造方法 |
US5921461A (en) * | 1997-06-11 | 1999-07-13 | Raytheon Company | Vacuum package having vacuum-deposited local getter and its preparation |
US5929515A (en) * | 1997-10-01 | 1999-07-27 | The Charles Stark Draper Laboratory, Inc. | Gettering enclosure for a semiconductor device |
KR20000000549A (ko) * | 1998-06-01 | 2000-01-15 | 구자홍 | 가스방전표시장치의 게타구조 |
US6396207B1 (en) * | 1998-10-20 | 2002-05-28 | Canon Kabushiki Kaisha | Image display apparatus and method for producing the same |
US6992375B2 (en) * | 2000-11-30 | 2006-01-31 | Texas Instruments Incorporated | Anchor for device package |
US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
US6923625B2 (en) * | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
US7160368B1 (en) * | 2002-07-12 | 2007-01-09 | Em4, Inc. | System and method for gettering gas-phase contaminants within a sealed enclosure |
US7193364B2 (en) * | 2002-09-12 | 2007-03-20 | Osram Opto Semiconductors (Malaysia) Sdn. Bhd | Encapsulation for organic devices |
ITMI20031178A1 (it) * | 2003-06-11 | 2004-12-12 | Getters Spa | Depositi multistrato getter non evaporabili ottenuti per |
US20050085053A1 (en) | 2003-10-20 | 2005-04-21 | Chien-Hua Chen | Method of activating a getter structure |
US7871660B2 (en) * | 2003-11-14 | 2011-01-18 | Saes Getters, S.P.A. | Preparation of getter surfaces using caustic chemicals |
US7042076B2 (en) * | 2004-03-09 | 2006-05-09 | Northrop Grumman Corporation | Vacuum sealed microdevice packaging with getters |
US20050253283A1 (en) * | 2004-05-13 | 2005-11-17 | Dcamp Jon B | Getter deposition for vacuum packaging |
JP4453546B2 (ja) * | 2004-12-22 | 2010-04-21 | 日産自動車株式会社 | パッケージ素子 |
US20070013305A1 (en) * | 2005-07-18 | 2007-01-18 | Wang Carl B | Thick film getter paste compositions with pre-hydrated desiccant for use in atmosphere control |
US7789949B2 (en) * | 2005-11-23 | 2010-09-07 | Integrated Sensing Systems, Inc. | Getter device |
JP2007251238A (ja) * | 2006-03-13 | 2007-09-27 | Epson Toyocom Corp | 圧電デバイスおよび圧電デバイスの製造方法 |
WO2007136706A1 (en) * | 2006-05-17 | 2007-11-29 | Qualcomm Mems Technologies Inc. | Desiccant in a mems device |
JP4844322B2 (ja) * | 2006-09-26 | 2011-12-28 | パナソニック電工株式会社 | 真空封止デバイスの製造方法 |
KR101464305B1 (ko) * | 2007-09-11 | 2014-11-21 | 주식회사 동진쎄미켐 | 게터 페이스트 조성물 |
CN102197585A (zh) * | 2008-08-27 | 2011-09-21 | 精工电子有限公司 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
WO2010023727A1 (ja) * | 2008-08-27 | 2010-03-04 | セイコーインスツル株式会社 | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 |
JP5128671B2 (ja) * | 2008-08-27 | 2013-01-23 | セイコーインスツル株式会社 | 圧電振動子、発振器、電子機器及び電波時計、並びに圧電振動子の製造方法 |
JP5128670B2 (ja) * | 2008-08-27 | 2013-01-23 | セイコーインスツル株式会社 | 圧電振動子、発振器、電子機器及び電波時計、並びに圧電振動子の製造方法 |
EP2400540A4 (en) * | 2009-02-19 | 2013-10-09 | Nec Corp | VACUUM-SEALED HOUSING, PCB WITH VACUUM-SEALED HOUSING, ELECTRONIC DEVICE AND METHOD FOR PRODUCING A VACUUM-SEALED HOUSING |
JP2010251702A (ja) * | 2009-03-27 | 2010-11-04 | Kyocera Corp | 電子部品、パッケージおよび赤外線センサ |
FR2950877B1 (fr) * | 2009-10-07 | 2012-01-13 | Commissariat Energie Atomique | Structure a cavite comportant une interface de collage a base de materiau getter |
JP2011203194A (ja) | 2010-03-26 | 2011-10-13 | Kyocera Corp | 赤外線センサ |
FR2971083B1 (fr) * | 2011-02-02 | 2014-04-25 | Ulis | Procede d'assemblage et de fermeture hermetique d'un boitier d'encapsulation |
JP6030436B2 (ja) * | 2011-12-27 | 2016-11-24 | 京セラ株式会社 | 電子デバイスの製造方法および電子デバイス製造装置 |
JP5939385B2 (ja) * | 2012-04-13 | 2016-06-22 | 日本電気株式会社 | 赤外線センサパッケージ、赤外線センサモジュール、および電子機器 |
JP2014090118A (ja) * | 2012-10-31 | 2014-05-15 | Kyocera Corp | イメージセンサ用パッケージおよびイメージセンサ |
JP5997393B2 (ja) * | 2013-09-27 | 2016-09-28 | 京セラ株式会社 | 蓋体、パッケージおよび電子装置 |
FR3014241B1 (fr) * | 2013-11-29 | 2017-05-05 | Commissariat Energie Atomique | Structure d'encapsulation comprenant des tranchees partiellement remplies de materiau getter |
-
2014
- 2014-02-25 EP EP14753751.8A patent/EP2960935B1/en not_active Not-in-force
- 2014-02-25 WO PCT/JP2014/054590 patent/WO2014129666A1/ja active Application Filing
- 2014-02-25 JP JP2015501548A patent/JP6154458B2/ja active Active
- 2014-02-25 US US14/758,334 patent/US9756731B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53128291A (en) * | 1977-04-14 | 1978-11-09 | Citizen Watch Co Ltd | Crystal vibrator |
JPH08236660A (ja) | 1994-12-27 | 1996-09-13 | Corning Inc | 気密シ−ルされた電子パッケ−ジ |
JP2000227920A (ja) | 1999-02-05 | 2000-08-15 | Nippon Telegr & Teleph Corp <Ntt> | 情報フィルタリング方法及び装置並びに情報フィルタリングプログラムを記録した記録媒体 |
JP2003254820A (ja) | 2002-03-05 | 2003-09-10 | Mitsubishi Electric Corp | 赤外線検出器 |
JP2006086585A (ja) * | 2004-09-14 | 2006-03-30 | Daishinku Corp | 表面実装型圧電振動デバイス |
WO2010010721A1 (ja) * | 2008-07-25 | 2010-01-28 | 日本電気株式会社 | 封止パッケージ、プリント回路基板、電子機器及び封止パッケージの製造方法 |
JP2010040767A (ja) * | 2008-08-05 | 2010-02-18 | Olympus Corp | 気密封止パッケージ |
WO2013008919A1 (ja) * | 2011-07-14 | 2013-01-17 | 株式会社東芝 | セラミックス回路基板 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2960935A4 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2014129666A1 (ja) | 2017-02-02 |
EP2960935B1 (en) | 2018-04-04 |
US20150334845A1 (en) | 2015-11-19 |
JP6154458B2 (ja) | 2017-06-28 |
US9756731B2 (en) | 2017-09-05 |
EP2960935A4 (en) | 2016-10-12 |
EP2960935A1 (en) | 2015-12-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6154458B2 (ja) | 電子部品収納用パッケージおよび電子装置 | |
CN109309059B (zh) | 电子元件安装用基板、电子装置以及电子模块 | |
JP2010045201A (ja) | 電子部品モジュール及びその製造方法 | |
JP5853702B2 (ja) | 圧電振動デバイス | |
JP2013026506A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP5826113B2 (ja) | 圧電振動素子収納用パッケージおよび圧電装置ならびに多数個取り配線基板 | |
JP2013110214A (ja) | 電子部品収納用パッケージ | |
JP6309757B2 (ja) | 水晶デバイス | |
WO2020111125A1 (ja) | 電子素子実装用基板、および電子装置 | |
JP5984487B2 (ja) | 水晶デバイス | |
JP2017059814A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP6215663B2 (ja) | 電子素子収納用パッケージおよび電子装置 | |
JP5213663B2 (ja) | 電子装置の実装構造 | |
JP2005072421A (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP6622583B2 (ja) | 配線基板および電子装置 | |
JP2014107649A (ja) | 水晶デバイス | |
JP4116954B2 (ja) | 電子部品封止用基板およびそれを用いた電子装置 | |
JP2007142947A (ja) | 表面実装型圧電発振器 | |
JP2015076584A (ja) | 電子部品収納用パッケージ | |
JP6943710B2 (ja) | 電子素子実装用基板、電子装置および電子モジュール | |
JP2017212256A (ja) | 電子装置用パッケージおよび電子装置 | |
JP6749053B2 (ja) | 電子部品収納用パッケージおよび電子装置 | |
JP2019169674A (ja) | 回路基板、電子部品および電子モジュール | |
JP2020035825A (ja) | 回路基板、電子部品および電子モジュール | |
JP2014225837A (ja) | 水晶デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14753751 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14758334 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2014753751 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2015501548 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |