WO2014121300A2 - Ensemble de transfert de données photoniques - Google Patents
Ensemble de transfert de données photoniques Download PDFInfo
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- WO2014121300A2 WO2014121300A2 PCT/US2014/014740 US2014014740W WO2014121300A2 WO 2014121300 A2 WO2014121300 A2 WO 2014121300A2 US 2014014740 W US2014014740 W US 2014014740W WO 2014121300 A2 WO2014121300 A2 WO 2014121300A2
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- flexible
- photonic
- interconnect
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Definitions
- the present invention relates generally to integrated circuits that are flexible.
- the described devices and methods use standard semiconductor processing techniques to develop assemblies that include optical as well as electrical circuits that operate in a flexible format such as a smart card.
- silicon photonics has attracted attention as an emerging technology for optical telecommunications and for optical interconnects in microelectronics. Based on sophisticated silicon semiconductor technology, silicon photonics can provide an inexpensive highly integrated electronic-photonic platform, in which ultra-compact photonic devices and electronic circuits converge.
- a more recent method of providing flexible interconnects to flexible substrates uses flexible springs.
- Flexible semiconductor circuits are generally available and flexible "plastic" CMOS has been demonstrated, but a means of interconnecting them is not presently recognized.
- a primary requirement of an assembly such as that of present interest is some form of transponder to provide communications capability.
- a transponder is a device that emits an identifying signal in response to reception of an interrogating signal.
- Transponders as used in applications such as smart cards, function as traditional transponders with contactless capability. They require no battery and are powered and read at short ranges via magnetic fields using electromagnetic induction. The wireless non-contact utilization of radio-frequency electromagnetic fields is also utilized to power logic and memory operations in the assembly and to transfer data from a card to an object such as a card reader.
- a transponder in a smart card format is a type of data storage and/or computing device that is commonly used for contactless or hybrid smart cards.
- the device is a complex rigid assembly that includes one or more integrated circuit (IC), an antenna with a substrate, connection of the chip's bond pads to the substrate and a molded body to protect the chip.
- ICs used in smart card transponders are very limited in die area due to reliability issues associated with the deformation of cards encountered during typical use. Rigid IC's fracture and break when bent. The larger the IC, the greater the failure rate.
- Transponder assemblies used in smart cards are typically 0.5mm (500um) in thickness and are individually inlayed in a complex cavity formed in a card body that is commonly made of PVC.
- the antenna is commonly a coil of copper wire.
- the antenna is integrated as an additional card inlay in another cavity on the same card and connected to an IC to provide wireless communication and enable RFID (RF Identification) capability.
- RFID RFID
- the requirement for a cavity limits the card thickness and increases the cost of manufacturing.
- the Photonic Data Transfer Assembly (PDTA) described here is a flexible device capable of receiving, processing and transmitting photonic signals.
- the photonic signals can be activated, deactivated, tuned and controlled electronically by included electronic circuitry which in turn may be controlled wirelessly using radio frequency communication.
- the PDTA comprises flexible photonic waveguide circuits and flexible electronic circuits integrated with flexible interconnects.
- Present day photonic waveguides fabricated using semiconductor wafers are limited to routing light in two dimensions, that is, in x and y directions, within the plane of rigid crystalline silicon.
- SOP Semiconductor-on-Polymer
- the SOP format provides for sub-micron sized features that are flexible for conformal mounting or capable of maintaining performance while being deformed dynamically. The result is a fully flexible sub-micron feature-capable waveguide.
- Electronic interface to the PDTA is accomplished by a flexible transponder which provides the device with capability to transmit data wirelessly using Radio Frequency (RF) signals from the flexible electronic-photonic circuit.
- RF Radio Frequency
- Ultra-thin flexible SOP Integrated Circuits are integrated with a printed RF antenna and can be laminated as a layer without the use of cavities or cutouts. This reduces cost and simplifies manufacturing.
- One embodiment of the flexible transponder places the IC and the RF antenna in a flexible hybrid electronic system that is printed on a flexible substrate, including bonding of the IC on the flexible substrate in contact with the RF antenna. Since the flexible transponder is ultra-thin and flexible, it is not subject to the reliability failures associated with the deformation of conventional rigid transponder assemblies. This important feature eliminates limits on die size for reliability and enables the use of larger ICs and arrays of ICs for large scale memory and processing.
- a basic interconnect includes a thin flexible material with at least one printed line having a connection pad at each end of the line to create a flexible interconnect. More complex interconnects may include multiple electrical conductors with the addition of electrical insulators serving as thermal conductors to a heat sink.
- FIG. 1 depicts an exploded view of a Photonic Data Transfer Assembly
- FIG. 2 shows the components within an assembled PDTA
- FIG. 3 shows a pair of 2-D Photonic Waveguides on a rigid substrate
- FIG. 4 shows two pair of 3-D Photonic Flexible Waveguides on polymer substrates, one as convex and one as concave;
- FIG. 5 depicts traditional 2-D Photonic Waveguides fabricated in SOI (Semiconductor-On-lnsulator);
- FIG. 6 illustrates a 3-D Flexible Waveguide fabricated in Semiconductor-on- Polymer (SOP) as a concave flexible structure
- FIG. 7 illustrates a 3-D Flexible Waveguide fabricated in SOP with a backside polymer
- FIG. 8 depicts a generic integrated circuit as an unmounted rigid die
- FIG. 9 illustrates attachment of the die of FIG. 8 to an antenna assembly
- FIG. 10 shows a typical smart card having a cavity for reception of a die and antenna assembly
- FIG. 1 1 shows the antenna assembly with an attached die mounted in the cavity of the smart card of FIG. 10;
- FIG. 12 illustrates sealing of a top cover to FIG. 1 1 to produce a
- FIG. 13 depicts an unmounted rigid die without and with requisite bonding wires
- FIG. 14 illustrates placement of the rigid die with bonding wires into a cavity in a conventional smart card
- FIG. 15 depicts an unmounted ultra-thin die produced by a SOP process
- FIG. 16 illustrates an adhering of the SOP die to a printed antenna assembly with subsequent lamination and sealing to produce the flexible smart card transponder of FIG. 17
- FIG. 18 shows an ultra-thin die as depicted in FIG. 17 attached to a printed card body with contacts and vias, without wire bonds or molding, to produce a flexible smart card without a cavity;
- FIG. 19 is a cross-section of a basic flexible interconnect showing two layers of metal with pads
- FIG. 20 illustrates the flexible interconnect of FIG. 19 when flexed
- FIG. 21 is a top view of a flexible interconnect including pads with vias
- FIG. 22 is a cross-section view of flexible interconnect of FIG. 21 ;
- FIG. 23 shows the flexible interconnect of FIG. 22 when flexed
- FIG. 24 depicts in cross-section a flexible interconnect with vias
- PCB printed circuit board
- FIG. 25 shows a top view of a flexible interconnect providing multiple interconnections
- FIG. 26 illustrates multiple semiconductor die connected by a flexible interconnect to each other and to the underlying substrate.
- the Photonic Data Transfer Assembly (PDTA) demonstrates the
- the described PDTA is a flexible device that can receive and send photonic signals. These can be activated, deactivated, tuned and controlled either by autonomous onboard electronic circuitry or remotely through the use of wireless radio frequency communication.
- the general utility of the PDTA becomes apparent when the assembly is constructed in a smart card format. This readily identifiable and accepted format provides considerable data storage and computation capability with extreme portability.
- the described PDTA comprises flexible optical circuits, in the form of photonic waveguides (130, 150), and flexible microelectronic circuits (160, 165) which are integrated with the use of flexible interconnects 190.
- a flexible substrate 170 supports a variety of circuit components. One of these is an ultra-thin flexible waveguide 130. A second instance of a waveguide 150 has been integrated with an active optical device 140 for application to the flexible substrate 170.
- SOP Semiconductor-on-Polymer
- IC Semiconductor-on-Polymer
- interconnects 190 may be fabricated directly onto the flexible substrate 170.
- each of the elements may be fabricated in wafer form after which the separate ultra-thin die may be bonded to the flexible substrate 170.
- the working elements of the assembly are then protected by lower and upper layers of thin flexible package material (110, 120).
- the completely enclosed PDTA 100 shown in FIG. 2 is capable of receiving and transmitting electrical signals by means of flexible antenna 180 which is supported by processing elements in an SOP IC 160.
- Flexible antenna 180 also serves to inductively couple electrical power needed to drive the circuits of the PDTA 100.
- SOP IC 160 is also coupled to active optical device 140 which in turn is coupled to a waveguide 150 for transmission of optical signals.
- a second SOP IC 165 interfaces between waveguide 150 and waveguide 130 for additional optical communications.
- Ultra-small geometrical silicon photonic structures have been demonstrated as photonic waveguides. Integration of these waveguides with microelectronics provides a highly integrated platform for electronic-photonic convergence. The practical achievement of this platform requires reduction of such factors as the propagation and coupling losses in the interface to external fibers. State-of-the-art technologies specially tuned to the fabrication of nanometer structures, and the fundamental propagation performance has already become a practical standard. Some passive devices, such as branches and wavelength filters, and dynamic devices based on the thermo-optic effect or carrier plasma effect have been developed by using silicon photonic wire waveguides. These waveguides also offer an efficient media for nonlinear optical functions, such as wavelength conversion. Although polarization dependence remains a serious obstacle to the practical applications of these waveguides, waveguide-based polarization manipulation devices provide effective solutions, such as a polarization diversity system.
- Bonding a wafer, individual die, or SoP device from a lll-V semiconductor, such as GaAs (Gallium Arsenide) or similar photonic material, onto the flexible silicon prior to demount can create an active region for lasers, amplifiers, modulators, and other photonic devices using standard processing techniques on the pre-demount flexible substrates.
- additional photonic devices may be mounted to the opposite side of a flexible photonic waveguide structure for stacking of devices in three dimensions (3-D).
- Waveguides are an essential component of photonic circuits.
- the presently described devices are flexible silicon strip photonic waveguides routed in silicon to create interconnects and couplers. These are photonic structures having sub- micron features that are integrated with CMOS (Complementary Metal Oxide Semiconductor). Single crystalline silicon structures are well known by those skilled in these arts to be effective for photonic waveguides.
- CMOS Complementary Metal Oxide Semiconductor
- Current structures utilize rigid wafer semiconductor substrates where the waveguides can be routed in the two-dimensional plane of the crystalline silicon, as depicted in waveguides 220 of FIG. 3.
- Implementing photonic devices using a Semiconductor-on-Polymer (SOP) process that has been developed for flexible CMOS results, as depicted in FIG. 4, in flexible single crystalline silicon structures that can be deformed into the third dimension.
- SOP Semiconductor-on-Polymer
- Such fabrication of photonic waveguides (230, 240) results in photonic devices that are flexible and provide for the routing of light in three dimensions.
- CMOS circuitry In a Semiconductor-on-Polymer (SOP) process, such as that described in U.S. Patent No. 6,762,510 entitled “Flexible Integrated Monolithic Circuit" issued to Fock et al., a semiconductor wafer, such as one upon which CMOS circuitry has been fabricated, is coated with a polymer. The polymer conforms well to the CMOS circuitry and is cured to a solid. A carrier substrate is then temporarily bonded to the polymer. This carrier is used as support of the intermediate assembly while the original CMOS substrate, that is, the handle silicon, is removed by processes that may include grinding and etching in order to reduce the original substrate to less than about 12 ⁇ .
- SOP Semiconductor-on-Polymer
- ultra-thin semiconductor substrate with its CMOS devices intact is then released from the carrier substrate by breaking its temporary bond to the polymer. This results in a flexible integrated circuit in a SOP format.
- Three-dimensional waveguides can be patterned in situ with silicon mesa isolation.
- Other photonic material can be integrated into the semiconductor wafer prior to the SOP processing.
- such waveguides can be fabricated simultaneously with flexible CMOS so that the resultant integrated circuits and waveguides are both flexible.
- Devices fabricated using lll-V materials, such as Gallium Arsenide (GaAs), and other photonic materials are bonded to the photonic circuits for the integration of lasers and diodes. These devices can be bonded to the waveguides while they are either still mounted on their original rigid carrier wafer or after they have been demounted from the wafer.
- the devices can either be thinned to the point of flexibility or be made small enough so that they can be surface-mounted to the SOP waveguides without impeding the flexibility of the SOP wafer. Integration with CMOS provides ready connectivity to electronic inputs and outputs. SOP processing results in flexible single crystalline photonic lll-V and Silicon materials.
- the characteristic flexibility of the described devices enables these photonic waveguides to conform to a variety of radii. They are not affected adversely by deformation during storage, and they are physically robust, resisting damage from being dropped or other impact.
- the described design is adaptable to heatsinks, external device interconnects, high-temperature flexible materials other than SOP polymer, and claddings on the external surfaces of the semiconductor waveguides.
- FIG. 5 Semiconductor-On-lnsulator is depicted in FIG. 5.
- the photonic circuits and SOI waveguides 280 are fabricated using conventional methods on a buried oxide (BOX, 250) supported by handle silicon 260. This is protected by a passivation layer 270 resulting in a rigid two-dimensional device.
- BOX buried oxide
- the photonic circuits described here may be mounted to conform to concave or convex surfaces depending upon a variety of applications and the environment in which they are to be stored and used. This capability to conform is enabled by removal of the rigid handle silicon 260 (FIG. 5).
- the flexible photonic waveguide under present consideration is built upon a sub-micron single crystalline SOP layer supported by a flexible substrate with an intervening isolation layer. Passivation of the SOP provides an additional isolation layer effectively cladding the waveguide to confine light within the SOP.
- the isolation material may be any substance that supports confinement of the optical mode, such as silicon dioxide or silicon nitride.
- a polymer layer 290 is applied to the passivated surface of the IC for support while the handle silicon 260 is removed (FIG. 6) and replaced by a flexible backside polymer 295 (FIG. 7).
- the result is a flexible photonic waveguide completely encapsulated in a polymer coating.
- These waveguide assemblies may be reshaped dynamically as part of a tuning mechanism, or they may be simply adjusted to conform to various environmental conditions. They may be controlled by electronic circuits through control elements such as MEMS (Micro-Electro- Mechanical System) mirrors, PIN diodes and other similar devices to route, amplify or delay photonic signals.
- MEMS Micro-Electro- Mechanical System
- waveguides and other complex structures capable of routing signals in three dimensions, since photonic devices may be mounted to opposite sides of a flexible photonic waveguide structure.
- multiple flexible photonic waveguides may be stacked to increase functionality with light transfer occurring between the stacked waveguides.
- Waveguides within a stack may be optically coupled or they may be optically isolated.
- the flexible photonic circuit allows for integration of photonic devices such as low threshold lasers, tunable lasers, and other photonic integrated circuits with flexible Complementary Metal Oxide
- CMOS complementary metal-oxide-semiconductor
- CMOS devices convert the processed light into electronic signals and stimulate the lll-V materials. Construction of all of this on a SOP substrate provides a complete photonic circuit with the flexibility to route light in three dimensions.
- any single crystalline wafer material is a feasible candidate.
- deposited materials such as TEOS (Tetra-Ethyl- Ortho-Silicate), polysilicon, amorphous silicon, silicon nitride, silicon carbide, gallium nitride or others may be used. Additional usable materials include graphene, nanotubes and non-crystalline materials. Each of these would still benefit from the flexibility afforded by sub-micron features.
- TEOS Tetra-Ethyl- Ortho-Silicate
- polysilicon silicon nitride
- amorphous silicon silicon nitride
- silicon carbide silicon carbide
- gallium nitride gallium nitride
- Additional usable materials include graphene, nanotubes and non-crystalline materials. Each of these would still benefit from the flexibility afforded by sub-micron features.
- the essence of the presently described method is the fabrication of waveguides in wafer form and their subsequent conversion to flexible SOP.
- a radio frequency transponder as used in a smart card format consists of an integrated circuit (IC) computing device and an antenna.
- IC integrated circuit
- Conventional smart cards, described here in FIGs. 8-14, are constructed around, and constrained by, a rigid IC die 310 such as that shown in FIG. 8.
- a rigid IC is necessarily limited in size by the fact that larger ICs suffer a greater failure rate due to fracturing when they are subjected to bending.
- the computational and/or data storage capacity of the IC is to some extent limited by its size.
- An antenna assembly 320 (FIG. 9) is conventionally formed from a coil of copper wire with some provision for connection with a bonding region 330 to which the IC 310 is attached.
- the foundation of a conventional rigid smart card 350 is formed, as shown in FIG. 10, with a complex, sometimes multilevel, recessed channel 370 into which the antenna assembly 320 with attached IC 310 is placed (FIG.1 1 ).
- a typical conventional smart card is formed from PVC and has a thickness of about 0.5 mm. The recesses necessary for mounting of the working components are either molded or milled into this foundation.
- a rigid IC 310 may be affixed to an exterior contact substrate 340 (FIG. 13). Bonding wires may be used to connect multiple ICs into an array. The exterior contact substrate with mounted circuitry is then placed (FIG. 14) into a cavity 360 in the foundation 355 of an alternate form of a conventional smart card 300.
- the above described process is considerably simplified by the presently described method to produce a flexible smart card with an overall thickness of less than 0.25 mm.
- This method is based upon a flexible IC produced by a process such as Semiconductor-on-Polymer (SOP).
- SOP Semiconductor-on-Polymer
- the IC 410 of FIG. 15 may be larger and therefore more capable while also being more reliable than the rigid ICs used in previous smart cards.
- the flexible IC 410 does not need to be mounted on a rigid foundation.
- a variety of flexible substrates 450 may be used, including thin PVC, PET, or even paper; that is, any flexible material that can provide suitable dielectric isolation.
- the substrate material may be processed in sheet or roll-to-roll form to enable large volume production at low cost.
- the IC 410 may be placed directly on the substrate 450 with no need for a protective cavity.
- a flexible antenna 420 may be constructed without wire merely by printing it directly onto the substrate with a conductive ink, forming vias and printed contacts at the same time.
- the antenna substrate may be a polymer or paper and may easily be laminated onto another substrate for a specific application. Such an antenna is ultra-thin and flexible. It may be single-sided, or double-sided to accommodate printed structures and circuitry on both sides.
- the antenna substrate may be produced with interconnects or multilayer circuits to accommodate multiple ICs.
- additional circuitry, such as support logic and memory may be included on the flexible smart card. For a transponder, the antenna supports both send and receive capability. Low-cost resistors and capacitors that are not available on an IC may be printed directly to the card substrate.
- FIG. 18 The general case of a flexible IC 410 applied to a flexible substrate by means of an exterior contact substrate 440 is shown in FIG. 18.
- a flexible substrate 450 is pre-patterned to provide all necessary interconnects, including vias 460. This is generally accomplished by printing with a conductive ink.
- the ICs used in this method are thin and their bonding pads provide an opening through the polymer of the SOP that readily exposes them for contact.
- the product When attached to a thin substrate, the product is effectively planar, enabling direct adhesion between ICs and substrate with no need for a cavity to contain and protect the ICs.
- the thin IC 410 is simply placed onto an exterior contact substrate 440 for attachment to a flexible substrate 450 with electrical connections being made by a conductive epoxy or similar adhesive.
- Vias 460 through the flexible substrate 450 enable contact to the back side of the exterior contact substrate 440.
- An appropriate selection of materials for the contact pads and their mating connections allows them to naturally attach to each other when placed in contact.
- its own polymer substrate may advantageously assist in adhesion to the antenna and/or card substrate.
- the polymer coating of the SOP also provides environmental protection for the IC, during card construction as well as in the end product.
- the laminated cover of the flexible smart card may be transparent or opaque.
- a transparent cover enables access to light- sensitive circuitry, including optics, where such access is useful, in which applications the cover may also serve as a filter such as for color or polarization. More commonly, such a smart card will use an opaque cover printed with various logos or other identifying information.
- exterior contacts may be directly written into an outer layer of the card where a contacting option is desired instead of, or in addition to, a contactless card format.
- the flexible smart card may be used in many other applications.
- the described technology is also applicable to any flexible label whether for product, packaging or personnel, as a replacement for barcodes and magnetic strips.
- Other applications include a variety of identification systems such as passports and driver licenses where increased "smart" capability is desired, especially for secure documents where it is desirable to have a considerable capacity for updates.
- a basic interconnect includes a thin flexible material with at least one printed line having a connection pad at each end of the line to create a flexible interconnect.
- the flexible interconnect 500 is made from a flexible non-conductive material such as polymer 590.
- the large flexible surface area material provides a structure on which various features can be printed, patterned, deposited or etched.
- Conductive pads 510 and metal lines 520 may be formed on or in a flexible interconnect using low cost electronic printing capability. Such features, including sub-micron and multi-layer lines, may be printed on the flexible interconnect using wafer fabrication techniques known to those skilled in such art.
- FIG. 20 shows a basic flexible interconnect in a flexed state.
- the flexible interconnect can be attached to the assembly using materials such as conductive and non-conductive epoxies.
- the conductive epoxies or similarly suitable material can be applied so as to directly connect the interconnect pad to the pad of the die being contacted with the two surfaces coming into contact when the flexible interconnect is applied.
- a more sophisticated interconnection includes the patterning of a via
- FIG. 21 a top view of an enhanced version of a flexible interconnect is illustrated in FIG. 21 where vias 530 have been formed. Vias extend through the thickness of the flexible material as well as the metal surface of the pad.
- FIG. 22 A side view of the same interconnect appears in FIG. 22, while FIG. 23 depicts a flexed version of the same device.
- the interconnects (510 and 520) are entirely contained within the flexible interconnect material (polymer, 590) so as to provide electrical isolation.
- the flexible interconnect can be applied with the flexible interconnect pad surface on the side that is not adjacent to the die pad being contacted. To accomplish this, the flexible interconnect is adhered to the substrate with non- conductive epoxy or with an adhesive.
- An example of using the flexible interconnect is adhered to the substrate with non- conductive epoxy or with an adhesive.
- interconnect with vias FIG. 23
- Such interconnections may be made between one semiconductor die and another, from a semiconductor die to a printed circuit board (PCB), or between one PCB and another.
- PCB printed circuit board
- connection is made between a flexible PCB 540 at pad 545 and a semiconductor die 550 at its pad 560 using a conductive epoxy 570.
- the connection is made by printing a fill of conductive material, such as conductive epoxy, into the vias 530.
- the conductive material serves as a short circuit to the die pad, fills each via and overlaps the top of the flexible interconnect pad to form an electrical path from the die pad to the flexible interconnect pad.
- the filled vias 530 complete the electrical connection with pads 510 at the opposite side of the flexible interconnect 500.
- the epoxy fill of the vias maintains the thinness and flexibility of the interconnect.
- FIG. 25 A more complex, two-dimensional, flexible interconnect is shown in FIG. 25.
- This flexible interconnect 500 is used in FIG. 26 to make connections between two semiconductor die 550 and a substrate 600 such as a flexible PCB.
- Contact between the bonding pads 560 of the semiconductor die 550 are made by filling the vias with a printed conductive epoxy 570 that overflows onto the surface of the interconnect pad.
- a printable conductive ink may be used in place of the epoxy.
- the flexible interconnect 500 conforms to the topography of the underlying devices. Though the pads 510 of the flexible interconnect 500 have been shown as being recessed from the surrounding surface, they may be fabricated so as to reach the surface.
- a surface-to-surface connection may be made without epoxy by using pad materials that naturally attach to each other when placed in contact.
- the flexible material of the pad is open to accept electrical bonding to a die pad or substrate pad.
- the flexible interconnect may also be applied to a die by extending, or wrapping, over the edge of the die to a substrate where it is attached using a non-conductive adhesive.
- the surface area of the flexible interconnect may be large or relatively larger than the die being connected.
- the flexible material is large enough, and durable enough, that it can be handled during assembly without undue concern for its fragility. This accommodates ease of positioning that is independent of the die and substrate materials.
- the interconnect metal may be extremely small.
- a flexible direct-write printing technology is one means of producing a tightly packed interconnect. Printing with a conductive ink may be used to establish contact between two stacked material layers.
- Another means of producing a tightly packed interconnect is to use a
- SOP Semiconductor-on-Polymer
- Metal interconnects may be used to conduct heat or to form heat sinks.
- flexible interconnects may be formed from material that is an electrical insulator but thermally conductive in order to transport heat away from the attached circuitry. By replacing the polymer with an insulator material that conducts heat, the flexible interconnect becomes usable as a conformal heat sink. This is in addition to the fact that unused surface area on the flexible interconnect may be layered with metal lines for the purpose of conducting heat away from the interconnected devices.
- the flexible interconnect described here can be used as a replacement for bonding wires, especially as they can span long distances while conforming to underlying topography.
- multiple interconnects may be applied simultaneously, each with its own inherent insulation to protect it from the other interconnects, even when deformed. This reduces assembly time and cost while improving reliability.
- the interconnects may comprise multi-layer metal. In some embodiments, the interconnects may comprise multi-layer metal.
- the described flexible interconnects could be written one at a time using a material such as a conductive epoxy to trace from one pad to another on top of a flexible polymer strip that had been constructed with an array of vias, selectively addressing those contacts necessary to configure a particular circuit. It will be recognized by those skilled in these arts that many combinations and variations of the above-described devices and techniques are possible.
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- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Communication System (AREA)
Abstract
L'invention concerne un ensemble de transfert de données photoniques (100) comprenant un dispositif souple permettant de recevoir, de traiter et de transmettre des signaux photoniques qui peuvent être activés, désactivés, syntonisés et commandés par un ensemble de circuits électroniques inclus qui peuvent être commandés sans fil par communication radiofréquence (RF). Des guides d'onde photoniques souples et des circuits électroniques souples sont intégrés à des interconnexions souples dans un format de carte intelligente de seulement 0,25 mm d'épaisseur. Les guides d'onde (130) fabriqués sous forme de tranche semi-conductrice et transformés en polymère sur semi-conducteur (SOP) assurent l'acheminement d'une lumière tridimensionnelle. Des caractéristiques de la taille du sous-micron (10) offrent une souplesse pour un montage conforme et maintiennent la performance pendant des déformations dynamiques. Les transpondeurs SOP souples (160) intégrés à des antennes imprimées (180) utilisent des signaux RF pour transmettre des données sans fil depuis le circuit électronique-photonique souple. Des interconnections (190) utilisent un matériau mince souple, tel qu'un polymère, qui supporte les lignes imprimées qui connectent des pastilles et peut contenir des trous d'interconnexion. Des fixations utilisent des résines époxydes conductrices et non conductrices pour rester souples tout en se conformant à une topographie sous-jacente.
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US14/181,539 US20140224882A1 (en) | 2013-02-14 | 2014-02-14 | Flexible Smart Card Transponder |
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US201361760350P | 2013-02-04 | 2013-02-04 | |
US61/760,350 | 2013-02-04 | ||
US201361764810P | 2013-02-14 | 2013-02-14 | |
US61/764,810 | 2013-02-14 | ||
US201361785501P | 2013-03-14 | 2013-03-14 | |
US61/785,501 | 2013-03-14 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9498745B2 (en) * | 2013-06-19 | 2016-11-22 | Vidaurre Heiremans Victor Eduardo | System for recovering and recycling acid mist generated in electrolytic cells for electrowinning or electrorefining non-ferrous |
EP3674759A1 (fr) * | 2018-12-31 | 2020-07-01 | Indigo Diabetes N.V. | Intégration d'un composant actif sur une plateforme photonique |
Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528222A (en) * | 1994-09-09 | 1996-06-18 | International Business Machines Corporation | Radio frequency circuit and memory in thin flexible package |
US5659153A (en) * | 1995-03-03 | 1997-08-19 | International Business Machines Corporation | Thermoformed three dimensional wiring module |
US6288443B1 (en) * | 1996-12-11 | 2001-09-11 | David Finn | Chip module and manufacture of same |
US6343744B1 (en) * | 1999-02-19 | 2002-02-05 | Nippon Telegraph And Telephone Corporation | Noncontact type IC card and system therefor |
US20020106165A1 (en) * | 2000-12-13 | 2002-08-08 | Barry Arsenault | Optical waveguide assembly for interfacing a two-dimensional optoelectronic array to fiber bundles |
US20030031446A1 (en) * | 2001-08-08 | 2003-02-13 | Photon-X, Inc. | Freestanding athermal polymer optical waveguide |
US20030057525A1 (en) * | 2001-05-08 | 2003-03-27 | Johann-Heinrich Fock | Flexible integrated monolithic circuit |
US20030133682A1 (en) * | 2002-01-14 | 2003-07-17 | Henryk Temkin | Optical waveguide structures and methods of fabrication |
US20040178484A1 (en) * | 2003-03-14 | 2004-09-16 | General Electric Company | Interposer, interposer package and device assembly employing the same |
US20050024290A1 (en) * | 2001-02-15 | 2005-02-03 | Integral Technologies, Inc. | Low cost RFID antenna manufactured from conductive loaded resin-based materials |
US20060072297A1 (en) * | 2004-10-01 | 2006-04-06 | Staktek Group L.P. | Circuit Module Access System and Method |
US20060079127A1 (en) * | 2004-10-01 | 2006-04-13 | Socketstrate, Inc. | Structure and method of making interconnect element, and multilayer wiring board including the interconnect element |
US20060237838A1 (en) * | 2003-02-19 | 2006-10-26 | Mark Fery | Thermal interconnect systems methods of production and uses thereof |
US20070231953A1 (en) * | 2006-03-31 | 2007-10-04 | Yoshihiro Tomita | Flexible interconnect pattern on semiconductor package |
US20090129786A1 (en) * | 2007-11-02 | 2009-05-21 | National Semiconductor Corporation | Coupling of optical interconnect with electrical device |
US20090152100A1 (en) * | 2007-12-14 | 2009-06-18 | Ami Semiconductor, Inc. | Thick metal interconnect with metal pad caps at selective sites and process for making the same |
US20100328028A1 (en) * | 2003-07-04 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Flexible semiconductor device and identification label |
WO2012145605A1 (fr) * | 2011-04-22 | 2012-10-26 | The Regents Of The University Of California | Modulateur optique à base de graphène |
US20130028147A1 (en) * | 2011-07-26 | 2013-01-31 | Motorola Mobility, Inc. | Front end employing pin diode switch with high linearity and low loss for simultaneous transmission |
-
2014
- 2014-02-04 WO PCT/US2014/014740 patent/WO2014121300A2/fr active Application Filing
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5528222A (en) * | 1994-09-09 | 1996-06-18 | International Business Machines Corporation | Radio frequency circuit and memory in thin flexible package |
US5659153A (en) * | 1995-03-03 | 1997-08-19 | International Business Machines Corporation | Thermoformed three dimensional wiring module |
US6288443B1 (en) * | 1996-12-11 | 2001-09-11 | David Finn | Chip module and manufacture of same |
US6343744B1 (en) * | 1999-02-19 | 2002-02-05 | Nippon Telegraph And Telephone Corporation | Noncontact type IC card and system therefor |
US20020106165A1 (en) * | 2000-12-13 | 2002-08-08 | Barry Arsenault | Optical waveguide assembly for interfacing a two-dimensional optoelectronic array to fiber bundles |
US20050024290A1 (en) * | 2001-02-15 | 2005-02-03 | Integral Technologies, Inc. | Low cost RFID antenna manufactured from conductive loaded resin-based materials |
US20030057525A1 (en) * | 2001-05-08 | 2003-03-27 | Johann-Heinrich Fock | Flexible integrated monolithic circuit |
US20030031446A1 (en) * | 2001-08-08 | 2003-02-13 | Photon-X, Inc. | Freestanding athermal polymer optical waveguide |
US20030133682A1 (en) * | 2002-01-14 | 2003-07-17 | Henryk Temkin | Optical waveguide structures and methods of fabrication |
US20060237838A1 (en) * | 2003-02-19 | 2006-10-26 | Mark Fery | Thermal interconnect systems methods of production and uses thereof |
US20040178484A1 (en) * | 2003-03-14 | 2004-09-16 | General Electric Company | Interposer, interposer package and device assembly employing the same |
US20100328028A1 (en) * | 2003-07-04 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Flexible semiconductor device and identification label |
US20060072297A1 (en) * | 2004-10-01 | 2006-04-06 | Staktek Group L.P. | Circuit Module Access System and Method |
US20060079127A1 (en) * | 2004-10-01 | 2006-04-13 | Socketstrate, Inc. | Structure and method of making interconnect element, and multilayer wiring board including the interconnect element |
US20070231953A1 (en) * | 2006-03-31 | 2007-10-04 | Yoshihiro Tomita | Flexible interconnect pattern on semiconductor package |
US20090129786A1 (en) * | 2007-11-02 | 2009-05-21 | National Semiconductor Corporation | Coupling of optical interconnect with electrical device |
US20090152100A1 (en) * | 2007-12-14 | 2009-06-18 | Ami Semiconductor, Inc. | Thick metal interconnect with metal pad caps at selective sites and process for making the same |
WO2012145605A1 (fr) * | 2011-04-22 | 2012-10-26 | The Regents Of The University Of California | Modulateur optique à base de graphène |
US20130028147A1 (en) * | 2011-07-26 | 2013-01-31 | Motorola Mobility, Inc. | Front end employing pin diode switch with high linearity and low loss for simultaneous transmission |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9498745B2 (en) * | 2013-06-19 | 2016-11-22 | Vidaurre Heiremans Victor Eduardo | System for recovering and recycling acid mist generated in electrolytic cells for electrowinning or electrorefining non-ferrous |
EP3674759A1 (fr) * | 2018-12-31 | 2020-07-01 | Indigo Diabetes N.V. | Intégration d'un composant actif sur une plateforme photonique |
WO2020141181A1 (fr) * | 2018-12-31 | 2020-07-09 | Indigo Diabetes Nv | Intégration d'un composant actif sur une plateforme photonique |
Also Published As
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WO2014121300A3 (fr) | 2014-10-30 |
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