WO2014097544A1 - Substrate transport device - Google Patents

Substrate transport device Download PDF

Info

Publication number
WO2014097544A1
WO2014097544A1 PCT/JP2013/006902 JP2013006902W WO2014097544A1 WO 2014097544 A1 WO2014097544 A1 WO 2014097544A1 JP 2013006902 W JP2013006902 W JP 2013006902W WO 2014097544 A1 WO2014097544 A1 WO 2014097544A1
Authority
WO
WIPO (PCT)
Prior art keywords
base material
outer peripheral
peripheral surface
diameter portion
small diameter
Prior art date
Application number
PCT/JP2013/006902
Other languages
French (fr)
Japanese (ja)
Inventor
尚樹 大庭
玉垣　浩
Original Assignee
株式会社神戸製鋼所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社神戸製鋼所 filed Critical 株式会社神戸製鋼所
Publication of WO2014097544A1 publication Critical patent/WO2014097544A1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

  • the present invention relates to a base material transport apparatus that is provided in a film forming apparatus that performs a film forming process on the surface of a base material and has a base material transport roller such as a film forming roller.
  • Examples of equipment that adopts the roll-to-roll method include a film forming apparatus that forms a film by a film forming process using a sputtering method, a plasma CVD method, or the like, or a coating apparatus that applies a coating to the surface of a base material. Etc.
  • These apparatuses include a member having a relatively large diameter and a substantially columnar shape called a substrate conveying roller.
  • a film forming process or a coating process is performed on a substrate wound around the substrate conveying roller, and the substrate wound around the substrate conveying roller is rotated. Is transported.
  • conveyance rollers used for various purposes such as a guide roller for changing the conveyance direction of the base material and a tension detection roller are known.
  • the apparatus described in Patent Document 1 includes means for sending a web to be coated with a coating to a coating deposition station, means for supporting the web at the coating deposition station, and coating the web at the coating deposition station. And means for driving gas in a region between the web and the support means.
  • the vacuum processing apparatus described in Patent Document 2 includes a cooling roller.
  • the cooling roller includes a rotating body, a pair of lid-like members, a rotation center axis of the rotating body, and a cooling cylinder.
  • the rotating body has a hollow cylindrical shape and rotates in the outer circumferential direction.
  • the lid-like member is attached to the rotating body so as to block the openings at both ends in the longitudinal direction of the rotating body.
  • the rotation center axis passes through the lid-like member.
  • the cooling cylinder is disposed in a hollow portion of the rotating body and maintains a non-contact state with the rotating body.
  • the first refrigerant is introduced into the cooling cylinder, and the second refrigerant is introduced into a space sandwiched between the inner peripheral surface of the rotating body and the outer peripheral surface of the cooling cylinder.
  • the devices described in Patent Document 1 and Patent Document 2 described above each include means for cooling the base material for the purpose of releasing heat input to the base material by the film forming process and the coating process.
  • the purpose of the cooling of these base materials is to prevent wrinkles and breaks that occur when the base material having a raised temperature is wound around the base material transport roller, and to maintain the quality of the film to be formed.
  • the driving means cools the base material by injecting one jet or a plurality of spaced jets into a region between the web (base material) and the supporting means. It has. According to this, it is possible to increase productivity by increasing the heat transfer efficiency between the web and the support means.
  • the injected gas is expected to leak into the process zone from both ends of the web after passing through a narrow gap between the web and the support means. This can be a problem in processes where a small amount of gas greatly affects the film quality, such as a sputtered ITO film.
  • the base material is cooled by a cooling roller into which the first refrigerant and the second refrigerant are introduced.
  • the present technology can be widely applied not only as a film formation zone but also as a guide roller.
  • a substrate conveying roller having a two-stage shape is known. This shape is for avoiding as much as possible that the outer peripheral surface of the said base material conveyance roller contacts the coating surface or film-forming surface of a base material, and is the longitudinal direction (width direction of a base material) of the said base material conveyance roller.
  • a difference is provided between the diameters of both end portions and the central portion. Specifically, a diameter smaller than the diameters of both end portions is given to the central portion.
  • the two-stage substrate transport roller is applied to an apparatus that performs a film forming process and a coating process under vacuum like the vacuum processing apparatus described in Patent Document 2, the substrate and the substrate transport In the area where the roller does not contact, heat can be exchanged between the base material and the base material transport roller only by radiant heat transfer. This makes it difficult to release the heat input to the substrate due to the film formation process and the coating process, and causes a wrinkle or breakage when the heated substrate is wound around the substrate transport roller. This will cause denaturation.
  • the present invention has been made in view of the above problems, and is a base material transport device including a base material transport roller, while avoiding contact between the central portion of the base material transport roller and the base material. It aims at providing what can improve the heat-transfer efficiency in a non-contact location.
  • the present invention provides a substrate transport device provided in a film forming apparatus that performs a film forming process on the surface of the substrate.
  • the apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material.
  • the base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller.
  • the second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material that contacts the second and third outer peripheral surfaces from contacting the first outer peripheral surface.
  • the diameter is larger than the diameter.
  • the gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
  • FIG. 4A is a perspective view of a substrate transport apparatus provided in a film forming apparatus according to a third embodiment, and FIG.
  • FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG.
  • A) is a cross-sectional side view of the substrate transport apparatus provided in the film forming apparatus according to the fourth embodiment
  • (b) is a cross-sectional view taken along the line VB-VB in FIG. 5 (a).
  • FIG. 1 is a sectional front view of the film forming apparatus 1 according to the present embodiment.
  • FIG. 2 is a cross-sectional side view showing the base material transport device 2 a provided in the film forming apparatus 1.
  • the film forming apparatus 1 includes an unwinding unit 3, a film base material transport unit, and a winding unit 4.
  • the winding unit 3 unwinds the film substrate W that is a film-like substrate from the substrate roll.
  • the base material roll is obtained by winding the film base material W into a roll shape.
  • the film base W has a width of about 1 meter and a small thickness of about several tens to several hundreds of ⁇ m, for example, and is made of, for example, resin or glass.
  • the said film base material conveyance part conveys the unwound film base material W to a surface treatment process. In this surface treatment step, the film substrate W is subjected to a surface treatment by a sputtering method, a CVD method, or the like.
  • the said winding part 4 winds up the film base material W in which the surface treatment was given again as a roll-shaped base material roll.
  • the film forming apparatus 1 conveys a long film substrate W having a length of, for example, 100 m or more from the substrate roll of the unwinding unit 3 to the substrate roll of the winding unit 4 by a so-called roll-to-roll method.
  • it is an apparatus for performing a surface treatment on the film substrate W.
  • the up-down direction toward the paper surface in FIG. 1 is defined as the up-down direction of the film forming apparatus 1, and the left-right direction toward the paper surface is also defined as the left-right direction of the film forming apparatus 1.
  • the paper surface penetration direction of FIG. 1 is called the front-back direction.
  • the film forming apparatus 1 further includes a vacuum chamber 5.
  • the vacuum chamber 5 accommodates the unwinding unit 3, the substrate conveying device 2 a, and the winding unit 4.
  • the vacuum chamber 5 is, for example, a box shape, and is formed in a bowl shape with a hollow inside. Further, the vacuum chamber 5 has a function of keeping the inside airtight with respect to the outside of the vacuum chamber 5.
  • a vacuum pump (not shown) is provided below the vacuum chamber 5. By this vacuum pump, the inside of the vacuum chamber 5 is depressurized to a low pressure state or a vacuum state.
  • the unwinding part 3 is arranged on the upper left side of the central part in the vertical direction in the vacuum chamber 5 shown in FIG.
  • the unwinding unit 3 has an unwinding core that is a winding core.
  • the unwinding core has, for example, a cylindrical shape or a columnar shape slightly longer than the width of the film base W.
  • a base material roll is formed by winding the film base material W around the unwinding core.
  • the unwinding unit 3 is configured by attaching the base material roll to the film forming apparatus 1.
  • the unwinding unit 3 is disposed in the vacuum chamber 5 so that the rotation center axis thereof is perpendicular to the paper surface of FIG.
  • the film forming apparatus 1 includes a film forming unit.
  • the film forming unit is provided at a position below the center in the vertical direction in the vacuum chamber 5 shown in FIG. 1 and below the unwinding unit 3.
  • the film forming unit performs a surface treatment (surface treatment step) on the surface of the film substrate W unwound from the unwinding unit 3 by, for example, sputtering or plasma CVD.
  • a sputtering film forming unit using a sputtering method is disclosed as an example of the film forming unit.
  • the base material transport device 2a includes a base material transport roller for transporting the film base material W in the sputtering film forming unit that performs the surface treatment process.
  • FIG. 1 shows a film forming roller 6 and a pair of sputter evaporation sources T which are a part of the configuration of a general sputtering film forming unit and are examples of the substrate transport roller.
  • the film forming roller 6 of the sputtering film forming unit shown in FIG. 1 is formed in a cylindrical shape or a columnar shape with a stainless material or the like.
  • the film forming roller 6 has a cylindrical outer peripheral surface, and conveys the film substrate W wound around the film.
  • the film forming roller 6 has a rotation shaft 10 and rotates around a rotation center axis that is a center axis of the rotation shaft 10.
  • the film forming roller 6 is disposed so that the rotation center axis is substantially parallel to the rotation center axis of the unwinding unit 3.
  • the base material transport device 2 a includes a gas introduction mechanism 14 a in addition to the film forming roller 6.
  • the gas introduction mechanism 14 a is a flow path for introducing gas into a space formed between the base material W and the film forming roller 6 in order to improve the heat transfer efficiency between the base material W and the film forming roller 6. Form. Detailed configurations of the film forming roller 6 and the substrate conveying device 2a will be described later.
  • the sputter evaporation source T is disposed on each of the left and right sides of the film forming roller 6 so as to face the film substrate W conveyed by the film forming roller 6.
  • the sputter evaporation source T is an evaporation source containing a component to be deposited on the surface of the film substrate W. As is well known, this component is sputtered (evaporated) by glow discharge, guided to the surface of the film substrate W, and deposited on the surface.
  • the winding unit 4 is arranged on the right side of the unwinding unit 3 in the vacuum chamber 5 shown in FIG.
  • the winding unit 4 winds the film substrate W that has been surface-treated through the substrate transport apparatus 2a as a roll-shaped substrate roll, and has the same configuration as the unwinding unit 3 , Are arranged similarly.
  • the base material transport device 2a further includes a first guide roller 7 and a second guide roller 8 as shown in FIG.
  • the first guide roller 7 is provided near the film forming roller 6 between the unwinding unit 3 and the film forming roller 6. Specifically, the first guide roller 7 is disposed closer to the center of the vacuum chamber 5 than the left end of the film forming roller 6 in the left-right direction of the vacuum chamber 5, that is, closer to the rotation shaft 10 of the film forming roller 6.
  • the first guide roller 7 is disposed so as to be rotatable about a rotation center axis provided thereto, and the rotation center axis is parallel to the rotation center axes of the unwinding unit 3 and the film forming roller 6.
  • the first guide roller 7 makes it possible to always transport the substrate W from the film forming roller 6 from a certain angle and direction.
  • the second guide roller 8 is disposed between the winding unit 4 and the film forming roller 6 and on the right side of the first guide roller 7.
  • the second guide roller 8 has the same configuration as the first guide roller 7 and has an outer diameter that is substantially the same as the outer diameter of the first guide roller 7.
  • FIG. 2A is a cross-sectional side view of the base material transport apparatus 2a having the film forming roller 6, and the base material transport apparatus 2a when viewed from the right or left side of the film forming apparatus 1 shown in FIG.
  • the configuration is shown.
  • the vertical direction toward the paper surface of FIG. 2 coincides with the vertical direction of the film forming apparatus 1 shown in FIG. 1, and the film forming roller 6 shown in the direction perpendicular to the paper surface (through direction) in FIG.
  • the axis (rotating shaft 10) is shown in FIG. 2 along the left-right direction.
  • the film forming roller 6 is provided so as to be sandwiched between a pair of bearings 9, a right end large diameter portion 11a, a left end large diameter portion 11b, and both end large diameter portions 11a and 11b in addition to the rotating shaft 10.
  • the bearings 9 are arranged at positions separated from each other in the front-rear direction in the vacuum chamber 5 and hold the end portions of the rotating shaft 10 at the positions to be rotatable. That is, the rotating shaft 10 can rotate while being held by both bearings 9.
  • the both end large diameter portions 11 a and 11 b and the central small diameter portion 12 are arranged around the rotary shaft 10 so as to rotate integrally with the rotary shaft 10.
  • the rotary shaft 10 is a columnar or cylindrical member having a constant outer diameter. Parts near both ends of the rotating shaft 10 are held by the bearings 9. In this way, the rotary shaft 10 can rotate around its longitudinal direction, that is, the axial center along the axial direction, and is rotationally driven at a predetermined rotational speed by a driving device (not shown).
  • the right end large-diameter portion 11 a is provided at a position closer to the bearing 9 on the right side than the center in the longitudinal direction of the rotary shaft 10, and the right end large-diameter portion 11 b is the longitudinal axis of the rotary shaft 10. It is provided at a position close to the bearing 9 on the left side of the center in the direction.
  • Both the large-diameter portions 11a and 11b have a disk shape and have a predetermined thickness sufficient to wind the end (side) side in the width direction of the film base W.
  • Both-end large-diameter portions 11a and 11b each have a cylindrical second outer peripheral surface and a third outer peripheral surface.
  • the diameters of the second and third outer peripheral surfaces that is, the outer diameters of the large-diameter portions 11a and 11b at both ends are arbitrarily determined according to the desired performance of the film forming apparatus 1, but at least from the outer diameter of the rotating shaft 10. Is also big.
  • Both-end large-diameter portions 11a and 11b are provided so as to be coaxial with the rotary shaft 10 at a position having a sufficient space therebetween. The spacing is sufficient for both ends (both sides) in the width direction of the film substrate W to be wound around the large-diameter portions 11a and 11b at both ends, and has a size smaller than the width of the film substrate W. .
  • Both-end large-diameter portions 11a and 11b are provided at positions that are substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10.
  • the large-diameter portions 11a and 11b at both ends may be formed integrally with the rotating shaft 10, or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the large-diameter portions 11 a and 11 b at both ends can be rotated in accordance with the rotation of the rotating shaft 10.
  • FIG. 2 shows a state in which the film base W is wound around the large-diameter portions 11a and 11b at both ends.
  • the center position in the width direction of the film substrate W substantially coincides with the center position in the longitudinal direction of the rotating shaft 10, and both end portions (both side portions) in the width direction of the film substrate W are large diameter portions at both ends. It exists on the 2nd outer peripheral surface of 11a, 11b. Both ends of the film base W in the width direction do not protrude from the ends of the large-diameter portions 11a and 11b to the end side of the rotating shaft 10, that is, both outer sides.
  • the film base W wound around the large diameter portions 11a and 11b at both ends is conveyed by the rotation of the large diameter portions 11a and 11b at both ends.
  • the central small-diameter portion 12 is a column or cylinder having a constant outer diameter.
  • the length along the axial center of the central small diameter portion 12 is smaller than the interval between the large diameter portions 11a and 11b at both ends.
  • the central small diameter portion 12 has an outer diameter smaller than the outer diameters of the large diameter portions 11a and 11b at both ends. That is, the central small diameter portion 12 has a first outer peripheral surface having a diameter smaller than the diameters of the second and third outer peripheral surfaces of the large diameter portions 11a and 11b at both ends.
  • the central small-diameter portion 12 is provided so as to be coaxial with the large-diameter portions 11 a and 11 b at both ends and the rotating shaft 10.
  • the central small diameter portion 12 may be formed integrally with the rotating shaft 10 or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the central small diameter portion 12 can be rotated in accordance with the rotation of the rotating shaft 10.
  • the outer diameter of the central small-diameter portion 12, that is, the diameter of the first outer peripheral surface is smaller than the outer diameters of the large-diameter portions 11a and 11b at both ends, that is, the diameters of the second and third outer peripheral surfaces.
  • a space (gap) is formed in the gap.
  • the space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12 is particularly referred to as a gas introduction space.
  • the diameter of the central small diameter portion 12 is arbitrarily set so that a gas introduction space suitable for the desired performance of the film forming apparatus 1 is formed between the first outer peripheral surface of the central small diameter portion 12 and the film substrate W. It is determined.
  • the gas introduction mechanism 14 a forms a flow path for introducing gas into the gas introduction space, that is, the space formed between the film base W and the first outer peripheral surface of the central small diameter portion 12.
  • the central small-diameter portion 12 has a central position in the longitudinal direction of the central small-diameter portion 12 in the axial direction of the rotating shaft 10, that is, in the longitudinal direction, and an intermediate position between both large-diameter portions 11 a and 11 b and a central position of the rotating shaft 10. It is provided at a position that substantially matches.
  • the film forming roller 6 has an outer shape that is substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10.
  • the rotation shaft 10 rotates, so that the central small-diameter portion 12 formed integrally with the rotation shaft 10 or fixed to the rotation shaft 10 and both ends large.
  • the diameter portions 11a and 11b rotate in synchronization with each other.
  • the substrate transport apparatus 2a includes a pressure partition wall 13 in addition to the first guide roller 7, the second guide roller 8, the film forming roller 6 and the gas introduction mechanism 14a.
  • the pressure partition wall 13 is a surface of the first outer peripheral surface of the central small diameter portion 12 that does not face the substrate W, that is, the upper surface in FIGS. 2 (a) and 2 (b).
  • the first outer peripheral surface of the central small-diameter portion 12 and the second and third outer peripheral surfaces of the large-diameter portions 11a and 11b on both sides of the film forming roller 6 that are provided at positions facing each other are covered.
  • the opening between the first guide roller 7 and the second guide roller 8 is closed.
  • the pressure partition 13 provided in this way forms a closed space that is a substantially sealed space together with the base material W, the central small diameter portion 12, and the large diameter portions 11a and 11b at both ends, which are in contact with the large diameter portions 11a and 11b at both ends. create.
  • the closed space includes the gas introduction space, that is, a space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12, and the gas introduction space is thereby almost sealed.
  • the gas introduction space is sealed to such an extent that the gas is introduced into the closed space through the gas introduction mechanism 14a so that the pressure inside the gas introduction space is sufficiently maintained.
  • the inclusion of the gas introduction space in the almost closed space as described above makes it possible to avoid the problem that the pressure in the gas introduction space does not rise sufficiently in a vacuum environment. That is, it is possible to maintain the gas introduction space at a predetermined pressure, and it is possible to improve the heat transfer efficiency between the film base W and the central small diameter portion 12 through the gas in the gas introduction space. .
  • the pressure partition wall 13 includes a first airtight portion 13 a facing the substrate W wound around the first guide roller 7, and a substrate wound around the second guide roller 8. It has the 2nd airtight part 13b facing W, the connection part 13c which mutually connects the 1st airtight part 13a and the 2nd airtight part 13b, and the 1st wall part 13d and the 2nd wall part 13e.
  • the first and second wall portions 13d and 13e cover the first hermetic portion 13a, the second hermetic portion 13b, and the connecting portion 13c from both outer sides in the left-right direction of the pressure bulkhead 13 (left-right direction in FIG. 2A), respectively. It is provided as follows.
  • the first hermetic portion 13 a is a columnar member having substantially the same length as the film forming roller 6 along the longitudinal direction of the first guide roller 7, that is, the axial direction. It has a curved surface facing the outer peripheral surface of the guide roller 7.
  • the curved surface has a shape along the curvature of the substrate W wound around the first guide roller 7, that is, a concave surface, and this curved surface is formed from, for example, the substrate W wound around the first guide roller 7. It is arranged at a position separated by a minute distance of about 1 mm.
  • the second airtight portion 13b has the same configuration and shape as the first airtight portion 13a, and has a curved surface facing the second guide roller 8, and this curved surface is wound around the second guide roller 8. It is arranged at a position away from the hung base material W by a minute distance of about 1 mm, for example.
  • the connecting portion 13c is a flat plate-like member having substantially the same length as the length along the longitudinal direction of the first airtight portion 13a and the second airtight portion 13b.
  • the connecting part 13c connects the first airtight part 13a and the second airtight part 13b arranged as described above.
  • the connecting portion 13c extends along the longitudinal direction of the first hermetic portion 13a and the second hermetic portion 13b, that is, the direction parallel to the axial direction of the film forming roller 6, and the central small diameter portion in the film forming roller 6
  • the two airtight portions 13a and 13b are integrally connected so as to cover the first outer peripheral surface of 12 and the second and third outer peripheral surfaces of both end large diameter portions 11a and 11b so as not to face the film base W. Thereby, the opening between the first guide roller 7 and the second guide roller 8 is closed.
  • the first airtight portion 13a, the second airtight portion 13b, and the connection portion 13c are integrally connected to each other, so that an opening between the first guide roller 7 and the second guide roller 8 is obtained.
  • the lid that closes up is constructed. At this time, openings are formed on one end side and the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c.
  • the first wall portion 13d and the second wall portion 13e are respectively disposed so as to close the openings.
  • the first wall portion 13d is a flat plate-like member having substantially the same width as the distance between the first guide roller 7 and the second guide roller 8. As described above, the first wall portion 13d includes the first airtight portion 13a, the second airtight portion 13b, and the opening formed between the connecting portion 13c and the large-diameter portions 11a and 11b. Close. 13 d of 1st wall parts are arrange
  • the first wall portion 13 d faces the surface facing the substrate W conveyed from the first guide roller 7 to the film forming roller 6 and the substrate W conveyed from the film forming roller 6 to the second guide roller 8. And these surfaces are formed along the conveyance direction of the substrate W.
  • the surface formed along the conveyance direction of the substrate W between the first guide roller 7 and the second guide roller 8 and the film forming roller 6 is as small as about 1 mm from the opposite substrate W, for example.
  • the first wall portion 13d is disposed at a position where the curved surface facing the right end large diameter portion 11a is separated by a minute distance of, for example, about 1 mm from the second outer peripheral surface of the right end large diameter portion 11a.
  • the second wall portion 13e has the same configuration and shape as the first wall portion 13d, and is provided on the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c. It has been.
  • a space is formed between the pressure partition wall 13 and the film forming roller 6 by the pressure partition wall 13 having the above-described configuration, and this space is wound around the large-diameter portions 11a and 11b at both ends.
  • a continuous space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is formed by being continuous with the gas introduction space formed between the substrate W and the central small-diameter portion 12.
  • the pressure partition wall 13 having the above-described configuration can substantially isolate the space surrounding the entire outer periphery of the central small diameter portion 12 of the film forming roller 6 from the space inside the vacuum chamber 5 that is the outer space. It becomes possible to adjust the pressure of the gas introduction space to a pressure different from the pressure in the vacuum chamber 5 by the gas introduction mechanism 14a described below.
  • the gas introduction mechanism 14a is constituted by, for example, a tubular member having a hollow inside, for example, a pipe.
  • a plurality of holes for allowing the gas supplied to the cavity in the pipe to flow out of the pipe are formed at a plurality of positions arranged along the longitudinal direction.
  • the tubular gas introduction mechanism 14 a having such a configuration is disposed between the pressure partition wall 13 and the central small diameter portion 12 so as to extend along the longitudinal direction of the film forming roller 6.
  • an introduction gas source 15 is connected to the gas introduction mechanism 14a via a gas supply pipe and a regulating valve 16.
  • the adjustment valve 16 is composed of a needle valve or the like, is provided in the middle of the gas supply pipe, and adjusts the flow rate of the gas supplied to the gas introduction mechanism 14a.
  • the gas supplied into the space through the gas introduction mechanism 14a is an inert gas that does not adversely affect the film formation by the sputtering method.
  • the gas supplied through the gas introduction mechanism 14a fills the space formed between the pressure partition wall 13 and the film forming roller 6, and the base material W and the central small diameter portion wound around the large diameter portions 11a and 11b at both ends. 12 flows into the gas introduction space formed between the two.
  • the space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is filled with gas, and the pressure of the gas introduction space filled with gas is higher than the pressure in the vacuum chamber 5 that has been decompressed. Become. Due to this pressure difference, gas flows out from a gap of about 1 mm provided between the pressure partition wall 13 and the base material W and the large-diameter portions 11a and 11b at both ends.
  • the pressure of the gas introduction space filled with the gas is determined by the balance with the gas supply amount.
  • the surface pressure (contact pressure) that the substrate W receives from the cylindrical surface of the film forming roller 6 is about 140 Pa.
  • the tension of the substrate W changes, the surface pressure changes in proportion to the tension. Therefore, when gas is introduced (supplied) into the gas introduction space between the substrate W and the central small diameter portion 12 of the film forming roller 6, the surface pressure that the substrate W receives from the film forming roller 6 in the gas introduction space.
  • the substrate W and the first outer peripheral surface of the central small-diameter portion 12 of the film forming roller 6 through the gas introduction mechanism 14a It becomes possible to seal the gas supplied in the gas introduction space in the gas introduction space by the contact pressure of the base material W.
  • the film forming process by the sputtering method is performed under a pressure of the order of 0.1 Pa.
  • the mean free path of the inert gas argon (Ar) at 0.1 Pa is about 7 cm.
  • the mean free path is sufficiently larger than the size of the gap space of the gas introduction space, and may be regarded as a molecular flow.
  • the mean free path is inversely proportional to the pressure, and in the pressure range of 10 to 100 Pa, the mean free path is 0.07 to 0.7 mm, which is equivalent to the size of the gap space. Therefore, this region can be regarded as a region where a transition is made from a molecular flow to a viscous flow.
  • the number of gas molecules increases in proportion to the pressure, and the number of gas molecules colliding with the wall surface surrounding the gas introduction space also increases.
  • the heat balance due to convection between the wall surfaces is an exchange of energy due to collisions of gas molecules when viewed microscopically, and the amount of heat transferred increases as the number of collisions increases. Therefore, the heat transfer coefficient is proportional to the pressure.
  • the diameter of the first guide roller 7 and the second guide roller 8 is 74 mm
  • the width of the first guide roller 7 and the second guide roller 8 is 370 mm
  • the gas outlet gap formed by the gap between the guide roller 8 and the pressure partition wall 13 can be modeled as a rectangular slit having an opening of 1 mm ⁇ width of 370 mm and a depth of 60 mm (1 ⁇ 4 of the circumferential length of 74 mm in diameter).
  • the influence of the curvature of the first guide roller 7 and the second guide roller 8 and the influence of the gap between the side surfaces of the first guide roller 7 and the second guide roller 8 occur, but they are not considered here.
  • the conductance in this case is estimated to be about 0.003 [m 3 / s] from the modeled rectangular slit equation, and the pressure in the gas introduction space is 100 Pa and the external pressure in the gas introduction space is 0 Pa.
  • the amount of gas leakage from the partition wall 13 can be estimated to be about 180 sccm.
  • a high vacuum exhaust pump having a sufficient exhaust capability such as a turbo molecular pump (TMP) as a pump for constantly introducing a gas corresponding to the gas leakage amount through the gas introduction mechanism 14a and exhausting the inside of the vacuum chamber 5.
  • TMP turbo molecular pump
  • the pressure in the gas introduction space can be increased to about 100 to 1000 times the process pressure at the time of sputtering, and the corresponding heat transfer coefficient (which is proportional to the pressure for molecular flow) We can expect a rise.
  • the vacuum chamber 5 is used.
  • the gas is supplied to the space between the base material W and the non-contact portion that does not contact the base material W among the base material transport rollers while maintaining the internal pressure at a vacuum required for sputtering, and the pressure Can be maintained. Therefore, the contribution of heat transfer using gas molecules as a medium in addition to radiant heat can be increased, and the heat transfer efficiency from the substrate W, whose temperature has been increased by heat input by the film forming process, to the film forming roller 6 is improved. .
  • the heat that has entered the substrate W by a film formation process such as sputtering can be sufficiently released, and the substrate conveyed to the substrate conveyance roller having the two-stage shape, in this embodiment, the film formation roller 6. Generation of wrinkles and creases in the material W can be prevented.
  • FIG. 3A is a cross-sectional side view of the base material transport apparatus 2b of the film forming apparatus 1 according to the second embodiment, that is, when the base material transport apparatus 2b is viewed from the right or left side of the film forming apparatus 1.
  • FIG. 3B is a sectional view taken along line IIIB-IIIB in FIG.
  • the substrate transport apparatus 2b of the present embodiment does not have the pressure partition wall 13, and the gas introduction constructed in the central small diameter portion 12 of the film forming roller 6 in place of the gas introduction mechanism 14a made of the pipe. It differs from the substrate conveying apparatus 2a of 1st Embodiment by the point provided with the mechanism 14b. In the following description, these differences will be described in detail.
  • the gas introduction mechanism 14 b in the present embodiment is provided in the central small diameter portion 12 of the film forming roller 6.
  • the gas introduction mechanism 14b has a plurality of gas flow paths formed in the central small diameter portion 12, that is, a plurality of perforations 12b.
  • These perforations 12b are arranged in the circumferential direction of the central small diameter portion 12, and each perforation 12b is radial from the inside of the central small diameter portion 12 toward the first outer peripheral surface along the radial direction of the central small diameter portion 12. It extends to.
  • Each perforation 12b has a slit shape extending from one end side to the other end side along the longitudinal direction of the central small diameter portion 12. As shown in FIG.
  • each slit-shaped perforation 12b has a center formed by slit-shaped perforations 12b adjacent to each other in the circumferential direction in the circular cross section of the central small-diameter portion 12.
  • the corners are formed at 12 points so that the angle is approximately 30 degrees, that is, in the circumferential direction.
  • the number of the perforations 12b is not limited and may be more or less than 12.
  • the perforations 12b form the gas introduction mechanism 14b that forms a gas flow path.
  • the fluctuation of the pressure inside becomes large. Therefore, the gas introduction mechanism 14b is configured so that the central angle formed by the slit-shaped perforations 12b adjacent in the circumferential direction is approximately 45 degrees or less, that is, the perforations 12b are formed at eight or more locations. It is desirable to be constructed.
  • each of the perforations 12b constituting the gas flow path has a slit shape, but the shape of the gas flow path along the width direction of the central small diameter portion 12 is not particularly limited.
  • the slit-shaped perforations 12b are each divided into a plurality of holes in the width direction (axial direction) of the central small diameter portion 12, and a plurality of holes arranged in parallel along the width direction of the central small diameter portion 12 A gas flow path may be formed.
  • the gas introduction mechanism 14b including the plurality of perforations 12b that is, the plurality of gas flow paths, for example, with respect to the perforations 12b in the horizontal position along the left-right direction
  • An inert gas or the like is introduced from the introduction gas source 15 having the same configuration.
  • the introduction gas source 15 does not introduce the gas into all the perforations 12b of the gas introduction mechanism 14b at the same time, but the perforations 12b passing through the horizontal position among the plurality of perforations 12b rotating with the rotation of the film forming roller 6. In contrast, gas is introduced.
  • gas can be introduced sequentially into the plurality of perforations 12b that constitute the gas flow path, and the film forming roller 6 It is possible to always introduce gas from a fixed position and phase into the gas introduction space formed between the base material W wound around and the central small diameter portion 12.
  • the process source such as the sputter evaporation source T
  • a non-rotating gas supply pipe and a rotating gas The introduction of gas through a narrow gap with the introduction mechanism 14b can be considered.
  • the gas slightly leaking into the vacuum chamber from the opening of the gap is routed to a place where the influence on the film forming process is small, or is induced by a differential exhaust mechanism to a place where the influence is also small, etc. It is possible to discharge gas that leaks slightly from the gap. Most of the gas that has not leaked from the gap flows into the gas introduction mechanism 14 b formed in the film forming roller 6.
  • the gas is separated by the gas flow path sufficiently away from the position where the wound substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction of the film forming roller 6.
  • a space corresponding to the slit-like rectangular duct shown in the first embodiment is formed by the central small diameter portion 12 and the substrate W wound around.
  • the arc length with a central angle of 30 degrees is about 60 mm.
  • the gas channel ejection port is provided at a position about 30 degrees apart from the point at which the substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction, the first embodiment Conductance corresponding to the configuration according to the above can be obtained.
  • FIG. 4A shows a sectional side view of the film forming roller 6 of the film forming apparatus 1 according to the third embodiment, that is, the configuration of the film forming roller 6 when viewed from the right or left side of the film forming apparatus 1.
  • FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG.
  • the film forming roller 6 of the present embodiment has the same configuration as the film forming roller 6 of the second embodiment, but instead of the gas introduction mechanism 14b, a gas flow path having a shape different from the gas flow path is formed.
  • the second embodiment is different from the second embodiment in that a gas introduction mechanism 14c is provided. In the following description, the configuration of the gas introduction mechanism 14c will be described in detail.
  • the large diameter portions 11a and 11b at both ends rotate, but the central small diameter portion 12 does not rotate. That is, although the base material W is conveyed by rotation of both large diameter parts 11a and 11b, the central small diameter part 12 does not rotate.
  • the gas introduction mechanism 14c is formed in the central small diameter portion 12 which is such a non-rotating member that does not rotate.
  • the gas introduction mechanism 14 c includes a groove-shaped first gas flow path 17 a and a second gas formed on the first outer peripheral surface of the central small diameter portion 12 along the longitudinal direction of the central small diameter portion 12.
  • the first and second gas flow paths 17a and 17b are grooves formed on the outer peripheral surface of the central small diameter portion 12, and extend substantially parallel to each other, and these distances are the first outer periphery of the central small diameter portion 12. Less than half the circumference of the surface. These gas flow paths 17 a and 17 b correspond to a certain position (a predetermined position) in the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12. So that it is arranged. Specifically, in FIG. 4B, a straight line that is directly above from the center of the central small-diameter portion 12, that is, a straight line that faces the 12 o'clock direction of the clock, is spaced 120 degrees and 240 degrees clockwise from this straight line. The first and second gas flow paths 17a and 17b are arranged at positions.
  • the gas introduction path 19 is formed substantially at the axial center position of the film forming roller 6, and the introduction gas source 15 having the same configuration as the introduction gas source 15 according to the first embodiment is connected to the gas introduction path 19. Yes.
  • the introduction gas source 15 introduces an inert gas or the like into the gas introduction passage 19, and the introduced gas passes through the first and second connection passages 18a and 18b, respectively, and the first and second gas passages 17a and 17a, 17b. In this way, the gas can be introduced at a fixed angular position with respect to the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12.
  • the pressure in the region of 120 to 240 degrees sandwiched between the two gas flow paths 17a and 17b becomes almost constant at a value higher than the pressure around it, and heat transfer occurs mainly in this region. Therefore, by disposing a process source such as the sputter evaporation source T at a position facing this region, the heat transfer efficiency from the substrate W whose temperature has been increased by the heat of the film formation process to the film formation roller 6 can be improved. It becomes possible to increase the productivity of the process.
  • the gas introduced into the gas introduction space is from the angular position at which the substrate W is separated from the film forming roller 6, that is, the positions separated from the reference upward straight line by approximately 90 degrees and 270 degrees.
  • the introduced gas always flows in a certain direction toward the outflow side to the peripheral space.
  • the structure and position of the gas introduction path 19, the first and second connection paths 18 a and 18 b, and the first and second gas paths 17 a and 17 b formed in the central small-diameter section 12 that is a non-rotating section are the sputter evaporation source. It can be appropriately determined according to the arrangement of peripheral process sources such as T.
  • FIG. 5A is a cross-sectional side view of the base material transport device 2d of the film forming apparatus 1 according to the fourth embodiment, that is, a view of the base material transport device 2d viewed from the right or left side of the film forming device 1.
  • FIG. 5B is a cross-sectional view taken along the line VB-VB in FIG.
  • the base material transport device 2d of the present embodiment has substantially the same configuration as the base material transport device 2a of the first embodiment, but has a temperature raising / lowering mechanism inside the central small diameter portion 12. It is different from the substrate conveying device 2a of the first embodiment. In the following description, the configuration of the temperature raising / lowering mechanism will be described in detail.
  • the temperature raising / lowering mechanism has a plurality of temperature raising / lowering portions provided inside the central small diameter portion 12, that is, a plurality of temperature raising / lowering medium paths 20, and fluid such as heat medium oil and water is raised and lowered in these temperature raising / lowering medium paths 20.
  • a heating medium By circulating as a heating medium, the temperature of the central small diameter portion 12 is changed.
  • Each of the heating / warming medium paths 20 is constituted by, for example, a pipe or other tubular member.
  • each temperature raising / lowering part may be comprised by the sheath heater embedded in the center small diameter part 12.
  • the temperature raising / lowering medium path 20 is arranged so as to introduce the temperature raising / lowering medium from the outside of the film forming roller 6 to the inside of the central small diameter portion 12. That is, the temperature raising / lowering medium path 20 has a portion embedded in the central small diameter portion 12 and a portion connecting this portion and the heat medium supply source outside the film forming roller 6. In particular, a portion embedded in the central small diameter portion 12 is arranged along a surface of the first outer peripheral surface of the central small diameter portion 12 that faces the substrate W. Specifically, three regions ZONE1, ZONE2, and ZONE3 as shown in FIG.
  • the heating / cooling medium path 20 provided in each of the zones ZONE1 to ZONE3 is arranged so as to be guided outside the film forming roller 6 after making a round along the surface facing the substrate W in the zone.
  • the large-diameter portions 11a and 11b at both ends rotate, but the central small-diameter portion 12 does not rotate. That is, although the base material W is conveyed by the rotating large-diameter portions 11a and 11b at both ends, the central small-diameter portion 12 does not rotate.
  • the heated or cooled temperature control medium circulates in the tubular heating / cooling medium path 20 arranged independently of each other as described above, so that it faces the base material W of each of the regions ZONE1 to ZONE3 in the central small diameter portion 12.
  • the temperature of each surface to be controlled can be controlled independently, that is, it can be raised or lowered, whereby the temperature of the substrate W facing the central small diameter portion 12 can be raised or lowered.
  • the temperature raising / lowering mechanism including the plurality of temperature raising / lowering medium paths 20 enables the temperature of the surface of the central small diameter portion 12 facing the base material W to be raised and lowered independently for each of a plurality of regions.
  • the single film forming roller 6 it is possible to adjust the temperature of the substrate W facing the central small-diameter portion 12 to a temperature corresponding to each of a plurality of film forming processes. That is, according to the substrate transport apparatus 2d of the present embodiment, since it is not necessary to use a plurality of film forming rollers 6 for each temperature of the film forming process, the capacity of the vacuum chamber 5 can be reduced, and as a result, film forming is performed.
  • the apparatus 1 can be reduced in size.
  • the film forming apparatus 1 that performs surface treatment (film forming process) such as sputtering or plasma CVD is exemplified, and the characteristics of the substrate transfer apparatus 2d used in the film forming apparatus 1 are described.
  • the base material transport apparatus 2d having the configuration described in the present embodiment is an apparatus that needs to control the temperature of the base material W when transporting the film-shaped base material W, the base film transport apparatus 2d is connected to the film forming apparatus 1.
  • the present invention can be applied to various devices.
  • a base material transport device provided in a film forming apparatus that performs a film forming process on the surface of a base material, the base material transport roller including the base material transport roller, What can improve the heat transfer efficiency in the non-contact location is provided, avoiding a contact with a center part and a base material.
  • the apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material.
  • the base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller. And a large diameter portion at both ends.
  • the second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material in contact with the second outer peripheral surface and the third outer peripheral surface from contacting the first outer peripheral surface. It has a diameter larger than the diameter of the outer peripheral surface.
  • the gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
  • the second and third outer peripheral surfaces of the large-diameter portions at both ends of the base material transport roller have a diameter larger than the diameter of the first outer peripheral surface of the central small-diameter portion.
  • the base material can be prevented from coming into contact with the first outer peripheral surface in a state where the base material is in contact with the second and third outer peripheral surfaces.
  • the base material conveying apparatus further includes a pressure partition wall provided at a position facing a surface not facing the base material of the first outer peripheral surface of the central small diameter portion, and the pressure partition wall has a large diameter at both ends.
  • the base material contacting the second outer peripheral surface and the third outer peripheral surface of the portion, the central small diameter portion, and the large diameter portions at both ends are disposed so as to surround a closed space, and the base material and the central small diameter portion It is preferable that a space formed between the outer peripheral surface of the first space is included in the closed space.
  • the space between the base material and the first outer peripheral surface of the central small-diameter portion is included in the closed space surrounded by the pressure partition wall or the like, so that the space outside the closed space is, for example, exhausted. Even if the pressure is reduced, it becomes possible to introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion.
  • the gas introduction mechanism is a gas channel that extends from the inside of the central small-diameter portion toward the first outer peripheral surface of the central small-diameter portion as the gas introduction channel, and is supplied to the inside of the central small-diameter portion. It is preferable to have a flow path that introduces the liquid into a space formed between the base material and the central small diameter portion. This gas introduction mechanism makes it possible to efficiently introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion by effectively using the central small diameter portion.
  • the gas introduction channel introduces gas from a certain position in the space with respect to the space formed between the base material and the first outer peripheral surface of the central small diameter portion. Is preferred.
  • the base material conveyance apparatus which concerns on this invention is further equipped with the temperature raising / lowering mechanism which changes the temperature of the said center small diameter part, and the said temperature raising / lowering mechanism is the said base material among the 1st outer peripheral surfaces of the said center small diameter part. It is preferable to include a plurality of heating / cooling units that change the temperatures of the opposing surfaces independently of each other in a plurality of regions. Thereby, it becomes possible to adjust the temperature of the base material W facing the first outer peripheral surface of the central small diameter portion to a temperature corresponding to each of a plurality of film forming processes on a single base material transport roller.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Provided is a substrate transport device (2a) capable of improving heat-transmission efficiency in a non-contact location between a substrate and a substrate transport roller. This device is equipped with a substrate transport roller (6) and a gas introduction mechanism (14a). The substrate transport roller (6) has: a small-diameter center section (12) that is formed at the center section in the axial direction of the roller, and has a first outer peripheral surface; and large-diameter end sections (11a, 11b) that are positioned to the outside of the small-diameter center section (12) on both sides in the axial direction and have second and third outer peripheral surfaces which contact the substrate (W). The second and third outer peripheral surfaces have a larger diameter than that of the first outer peripheral surface, so as to prevent contact between the first outer peripheral surface and the substrate (W). The gas introduction mechanism (14a) has a gas introduction channel for introducing gas into the space formed between the substrate (W) and the first outer peripheral surface of the small-diameter center section (12).

Description

基材搬送装置Substrate transport device
　本発明は、基材の表面に成膜処理を施す成膜装置に備えられ、成膜ローラなどの基材搬送ローラを有する基材搬送装置に関する。 The present invention relates to a base material transport apparatus that is provided in a film forming apparatus that performs a film forming process on the surface of a base material and has a base material transport roller such as a film forming roller.
　近年、映像等を表示する表示デバイスの製造技術として、フィルム状の基材を円筒状のローラでガイドしながら搬送し、連続的に生産するロールツーロール方式が広く採用されている。生産装置のハード開発はもとより、成膜等のプロセスの開発、基板材料の開発などが同時並行的に進められている。とりわけ、基板材料については、軽量化の観点からのより薄い基板の使用の検討や、より広範囲でのプロセス温度に耐えうる材料の開発などが進められている。最近では、ガスバリア性や透光性などに優れ、樹脂と比較して高温処理も可能でありながら、樹脂フィルムと同様に曲げられることが可能な薄膜ガラス（ガラスフィルム）も開発されつつあり、従来にはない性能や特徴を有したデバイスの実現が期待されている。 In recent years, a roll-to-roll method in which a film-like base material is transported while being guided by a cylindrical roller and continuously produced is widely adopted as a manufacturing technology for a display device that displays an image or the like. In addition to hardware development of production equipment, development of processes such as film formation, development of substrate materials, etc. are being carried out simultaneously. In particular, with regard to substrate materials, studies on the use of thinner substrates from the viewpoint of weight reduction and development of materials that can withstand a wider range of process temperatures are being advanced. Recently, a thin film glass (glass film) that is excellent in gas barrier properties and translucency and can be bent in the same manner as a resin film while being able to be processed at a higher temperature than a resin has been developed. Realization of devices with unprecedented performance and features is expected.
　ロールツーロール方式を採用した装置例としては、スパッタリング法やプラズマＣＶＤ法などを用いた成膜処理によって皮膜を形成する成膜装置や、同じく基材の表面に塗料を塗布してコーティングするコーティング装置などが挙げられる。これらの装置は、基材搬送ローラと呼ばれる比較的大径で略円柱状の部材を備える。この種の装置では、一般に、前記基材搬送ローラに巻き掛けられた基材に対して成膜処理またはコーティングの処理が施され、当該基材搬送ローラの回転によってこれに巻き掛けられた基材が搬送される。プロセス処理部以外でも、基材の搬送方向を変えるためのガイドローラや張力検出用のローラなど、様々な目的に使用される搬送用ローラが知られている。 Examples of equipment that adopts the roll-to-roll method include a film forming apparatus that forms a film by a film forming process using a sputtering method, a plasma CVD method, or the like, or a coating apparatus that applies a coating to the surface of a base material. Etc. These apparatuses include a member having a relatively large diameter and a substantially columnar shape called a substrate conveying roller. In this type of apparatus, in general, a film forming process or a coating process is performed on a substrate wound around the substrate conveying roller, and the substrate wound around the substrate conveying roller is rotated. Is transported. In addition to the process processing unit, conveyance rollers used for various purposes such as a guide roller for changing the conveyance direction of the base material and a tension detection roller are known.
　上述したように、様々な基板・プロセス開発が進められるに従い、装置ハード面でも基板・プロセス特性を最大限発揮せしめる開発が求められている。具体的には、基板の薄型化に伴う皺などの対策や成膜等のプロセス時の入熱に対する冷却対策などが検討される必要がある。こうした観点で、ロールツーロール方式の装置の搬送ローラについても様々な技術が考案されている。一例として、基材搬送ローラを用いた装置に関しては、特許文献１に開示されている、ウェブに被膜を形成する装置、及び特許文献２に開示されている真空処理装置などがある。 As described above, as various substrate / process development progresses, development that maximizes the substrate / process characteristics is demanded on the hardware side of the equipment. Specifically, measures such as wrinkles associated with thinning the substrate and cooling measures against heat input during processes such as film formation need to be considered. From this point of view, various techniques have been devised for the transport roller of the roll-to-roll system. As an example, regarding an apparatus using a substrate transport roller, there are an apparatus for forming a coating film on a web, a vacuum processing apparatus disclosed in Patent Document 2, and the like disclosed in Patent Document 1.
　特許文献１に記載の装置は、被膜を被着すべきウェブを被覆被着ステーションに送る手段と、前記被覆被着ステーションにおいて前記ウェブを支持する手段と、前記被覆被着ステーションにおいて前記ウェブに被覆を添着する手段と、前記ウェブと前記支持手段との間の領域内にガスを駆動する手段を具備する。 The apparatus described in Patent Document 1 includes means for sending a web to be coated with a coating to a coating deposition station, means for supporting the web at the coating deposition station, and coating the web at the coating deposition station. And means for driving gas in a region between the web and the support means.
　また、特許文献２に記載の真空処理装置は、冷却ローラを備える。冷却ローラは、回転体と、一対の蓋状部材と、前記回転体の回転中心軸と、冷却筒と、を備える。回転体は、中空筒状でその外周方向に回転する。蓋状部材は、前記回転体の長手方向の両端の開口をそれぞれ塞ぐように当該回転体に取り付けられる。前記回転中心軸は前記蓋状部材を貫通する。前記冷却筒は、前記回転体の中空部に配置されて該回転体とは非接触状態を保つ。冷却筒の内部に第１の冷媒が導入され、前記回転体の内周面と前記冷却筒の外周面とに挟まれた空間に第２の冷媒が導入される。 Moreover, the vacuum processing apparatus described in Patent Document 2 includes a cooling roller. The cooling roller includes a rotating body, a pair of lid-like members, a rotation center axis of the rotating body, and a cooling cylinder. The rotating body has a hollow cylindrical shape and rotates in the outer circumferential direction. The lid-like member is attached to the rotating body so as to block the openings at both ends in the longitudinal direction of the rotating body. The rotation center axis passes through the lid-like member. The cooling cylinder is disposed in a hollow portion of the rotating body and maintains a non-contact state with the rotating body. The first refrigerant is introduced into the cooling cylinder, and the second refrigerant is introduced into a space sandwiched between the inner peripheral surface of the rotating body and the outer peripheral surface of the cooling cylinder.
　上述の特許文献１及び特許文献２に記載される装置はいずれも、成膜プロセス及びコーティングプロセスによる基材への入熱を逃がすことを目的として基材を冷却する手段を備える。これら基材の冷却は、温度が上昇した基材が基材搬送ローラに巻き掛けられる際に生じる皺や折れの防止や、成膜される膜の品質の保持等を目的とする。 The devices described in Patent Document 1 and Patent Document 2 described above each include means for cooling the base material for the purpose of releasing heat input to the base material by the film forming process and the coating process. The purpose of the cooling of these base materials is to prevent wrinkles and breaks that occur when the base material having a raised temperature is wound around the base material transport roller, and to maintain the quality of the film to be formed.
　具体的に、特許文献１に記載される装置は、駆動手段が、ウェブ（基材）と支持手段の間の領域に１つのジェット又は複数の離間したジェットを噴射して基材を冷却する手段を具備している。これによれば、ウェブと支持手段との伝熱効率を高めることにより、生産性を高めることが可能とされている。しかし、この技術では、噴射したガスはウェブと支持手段との狭い空隙を通過した後、ウェブ両端からプロセスゾーンに漏れ出すことが予想される。このことは、スパッタＩＴＯ膜のように少量のガス量が膜質に大きく影響を及ぼすプロセスでは問題となりうる。 Specifically, in the apparatus described in Patent Document 1, the driving means cools the base material by injecting one jet or a plurality of spaced jets into a region between the web (base material) and the supporting means. It has. According to this, it is possible to increase productivity by increasing the heat transfer efficiency between the web and the support means. However, with this technique, the injected gas is expected to leak into the process zone from both ends of the web after passing through a narrow gap between the web and the support means. This can be a problem in processes where a small amount of gas greatly affects the film quality, such as a sputtered ITO film.
　特許文献２に記載される装置では、第１の冷媒及び第２の冷媒が導入される冷却ローラによって、基材が冷却される。本技術は、成膜ゾーンのみならず、ガイドローラとしても幅広く適用されうるものである。一方で、近年は、２段形状を有する基材搬送ローラが知られている。この形状は、当該基材搬送ローラの外周面が基材の塗装面又は成膜面に接触することを極力避けるためのもので、当該基材搬送ローラの長手方向（基材の幅方向）の両端部の径と中央部の径との間に差が設けられている。具体的には、中央部に両端部の径よりも小さい径が与えられている。 In the apparatus described in Patent Document 2, the base material is cooled by a cooling roller into which the first refrigerant and the second refrigerant are introduced. The present technology can be widely applied not only as a film formation zone but also as a guide roller. On the other hand, in recent years, a substrate conveying roller having a two-stage shape is known. This shape is for avoiding as much as possible that the outer peripheral surface of the said base material conveyance roller contacts the coating surface or film-forming surface of a base material, and is the longitudinal direction (width direction of a base material) of the said base material conveyance roller. A difference is provided between the diameters of both end portions and the central portion. Specifically, a diameter smaller than the diameters of both end portions is given to the central portion.
　しかし、特許文献２に記載される真空処理装置のように、真空下で成膜プロセス及びコーティングプロセスを行う装置に前記二段形状の基材搬送ローラが適用されると、基材と基材搬送ローラとが接触しない領域では、輻射伝熱によってしか基材と基材搬送ローラ間での熱のやりとりができない。このことは、成膜プロセス及びコーティングプロセスによる基材への入熱を逃がすことを困難にし、温度の上昇した基材が基材搬送ローラに巻き掛けられる際に皺や折れを生じさせたり、膜の変性を生じさせてしまう。一方で、段差の無い単純な円筒状の外周面を有する搬送ローラが用いられる場合、当該搬送ローラと基材との接触面積が増えることで伝熱効率はいくらか改善されうるが、塗装面又は成膜面との接触による傷等の発生が懸念される。 However, when the two-stage substrate transport roller is applied to an apparatus that performs a film forming process and a coating process under vacuum like the vacuum processing apparatus described in Patent Document 2, the substrate and the substrate transport In the area where the roller does not contact, heat can be exchanged between the base material and the base material transport roller only by radiant heat transfer. This makes it difficult to release the heat input to the substrate due to the film formation process and the coating process, and causes a wrinkle or breakage when the heated substrate is wound around the substrate transport roller. This will cause denaturation. On the other hand, when a transport roller having a simple cylindrical outer peripheral surface without a step is used, the heat transfer efficiency can be somewhat improved by increasing the contact area between the transport roller and the base material, but the painted surface or film formation There are concerns about the occurrence of scratches and the like due to contact with the surface.
特開平１－１５２２６２号公報JP-A-1-152262 特開２０１０－７１４２号公報JP 2010-7142 A
　本発明は、上述の問題に鑑みてなされたものであり、基材搬送ローラを備えた基材搬送装置であって、当該基材搬送ローラの中央部分と基材との接触を避けながら、その非接触箇所における伝熱効率を向上させることが可能なものを提供することを目的とする。 The present invention has been made in view of the above problems, and is a base material transport device including a base material transport roller, while avoiding contact between the central portion of the base material transport roller and the base material. It aims at providing what can improve the heat-transfer efficiency in a non-contact location.
　本発明は、基材の表面に成膜処理を施す成膜装置に設けられる基材搬送装置を提供する。この装置は、前記基材を搬送する基材搬送ローラと、この基材搬送ローラと基材との間にガスを導入するガス導入機構と、を備える。前記基材搬送ローラは、当該基材搬送ローラのうちその軸心に沿った軸方向における中央部を構成する部分であって第１の外周面を有する中央小径部と、前記中央小径部の軸方向の両外側にそれぞれ位置し、前記基材と接触する第２の外周面及び第３の外周面をそれぞれ有し、前記基材搬送ローラの軸心周りに回転することで前記基材を搬送する両端大径部と、を有する。前記第２の外周面及び第３の外周面は、当該第２及び第３の外周面と接触する基材が前記第１の外周面と接触することを阻止するように当該第１の外周面の径よりも大きな径を有する。前記ガス導入機構は、前記基材と前記中央小径部の前記第１の外周面との間に形成される空間にガスを導入するためのガス導入流路を有する。 The present invention provides a substrate transport device provided in a film forming apparatus that performs a film forming process on the surface of the substrate. The apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material. The base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller. And a large diameter portion at both ends. The second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material that contacts the second and third outer peripheral surfaces from contacting the first outer peripheral surface. The diameter is larger than the diameter. The gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
本発明の第１実施形態による成膜装置を示す断面正面図である。It is a section front view showing the film deposition system by a 1st embodiment of the present invention. （ａ）は第１実施形態による成膜装置に設けられる基材搬送装置の断面側面図、（ｂ）は図２（ａ）におけるＩＩＢ－ＩＩＢ線に沿った断面図である。(A) is a cross-sectional side view of the substrate transport apparatus provided in the film forming apparatus according to the first embodiment, and (b) is a cross-sectional view taken along line IIB-IIB in FIG. 2 (a). （ａ）は第２実施形態による成膜装置に設けられる基材搬送装置の断面側面図、（ｂ）は図３（ａ）におけるＩＩＩＢ－ＩＩＩＢ線に沿った断面図である。(A) is a cross-sectional side view of the substrate transport apparatus provided in the film forming apparatus according to the second embodiment, and (b) is a cross-sectional view taken along line IIIB-IIIB in FIG. 3 (a). （ａ）は第３実施形態による成膜装置に設けられる基材搬送装置の斜視図、（ｂ）は図４（ａ）におけるＩＶＢ－ＩＶＢ線に沿った断面図である。FIG. 4A is a perspective view of a substrate transport apparatus provided in a film forming apparatus according to a third embodiment, and FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG. （ａ）は第４実施形態による成膜装置に設けられる基材搬送装置の断面側面図、（ｂ）は図５（ａ）におけるＶＢ－ＶＢ線に沿った断面図である。(A) is a cross-sectional side view of the substrate transport apparatus provided in the film forming apparatus according to the fourth embodiment, and (b) is a cross-sectional view taken along the line VB-VB in FIG. 5 (a).
　以下、図面を参照しながら、本発明の実施形態による成膜装置について説明する。なお、以下に説明する各実施形態及び図面において、成膜装置における同一の構成部材には、同一の符号及び同一の名称を付すこととする。従って、同一の符号及び同一の名称が付された構成部材については、同じ説明を繰り返さない。 Hereinafter, a film forming apparatus according to an embodiment of the present invention will be described with reference to the drawings. In each embodiment and drawing described below, the same constituent members in the film forming apparatus are denoted by the same reference numerals and the same names. Therefore, the same description will not be repeated for the components having the same reference numerals and the same names.
　［第１実施形態］
　図１及び図２を参照しながら、本発明の第１実施形態による成膜装置１について説明する。図１は、本実施形態による成膜装置１の断面正面図である。図２は、前記成膜装置１に設けられる基材搬送装置２ａを示す断面側面図である。 [First Embodiment]
A film forming apparatus 1 according to a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a sectional front view of the film forming apparatus 1 according to the present embodiment. FIG. 2 is a cross-sectional side view showing the base material transport device 2 a provided in the film forming apparatus 1.
　成膜装置１は、巻出し部３と、フィルム基材搬送部と、巻取り部４と、を備える。巻取り部３は、基材ロールからフィルム状の基材であるフィルム基材Ｗを巻き出す。基材ロールは、前記フィルム基材Ｗがロール状に巻かれたものである。フィルム基材Ｗは、例えば１メートルほどの幅と、数十～数百μｍ程度の小さい厚みを有し、例えば樹脂又はガラスからなる。前記フィルム基材搬送部は、巻き出されたフィルム基材Ｗを表面処理工程へ搬送する。この表面処理工程では、前記フィルム基材Ｗに対してスパッタリング法やＣＶＤ法などによる表面処理が施される。前記巻取り部４は、表面処理が施されたフィルム基材Ｗを再びロール状の基材ロールとして巻き取る。つまり、この成膜装置１は、例えば１００ｍ以上にわたる長尺のフィルム基材Ｗを、巻出し部３の基材ロールから巻取り部４の基材ロールへ、いわゆるロール・ツー・ロール方式で搬送しつつ、当該フィルム基材Ｗに対して表面処理を施す装置である。 The film forming apparatus 1 includes an unwinding unit 3, a film base material transport unit, and a winding unit 4. The winding unit 3 unwinds the film substrate W that is a film-like substrate from the substrate roll. The base material roll is obtained by winding the film base material W into a roll shape. The film base W has a width of about 1 meter and a small thickness of about several tens to several hundreds of μm, for example, and is made of, for example, resin or glass. The said film base material conveyance part conveys the unwound film base material W to a surface treatment process. In this surface treatment step, the film substrate W is subjected to a surface treatment by a sputtering method, a CVD method, or the like. The said winding part 4 winds up the film base material W in which the surface treatment was given again as a roll-shaped base material roll. In other words, the film forming apparatus 1 conveys a long film substrate W having a length of, for example, 100 m or more from the substrate roll of the unwinding unit 3 to the substrate roll of the winding unit 4 by a so-called roll-to-roll method. However, it is an apparatus for performing a surface treatment on the film substrate W.
　図１を参照しながら、本実施形態による成膜装置１の構成を説明する。以下の説明では、図１の紙面に向かっての上下方向を成膜装置１の上下方向とし、同じく紙面に向かっての左右方向を成膜装置１の左右方向とする。また、図１の紙面貫通方向を前後方向という。 The configuration of the film forming apparatus 1 according to the present embodiment will be described with reference to FIG. In the following description, the up-down direction toward the paper surface in FIG. 1 is defined as the up-down direction of the film forming apparatus 1, and the left-right direction toward the paper surface is also defined as the left-right direction of the film forming apparatus 1. Moreover, the paper surface penetration direction of FIG. 1 is called the front-back direction.
　この成膜装置１は、さらに真空チャンバ５を備える。真空チャンバ５は、前記巻出し部３、基材搬送装置２ａ、及び巻取り部４を収容する。真空チャンバ５は、例えば箱型で、内部が空洞の筺状に形成されている。さらに、真空チャンバ５は、この真空チャンバ５の外部に対して内部を気密的に保持する機能を有する。真空チャンバ５の下側には図示しない真空ポンプが設けられる。この真空ポンプによって真空チャンバ５の内部が低圧状態または真空状態にまで減圧される。 The film forming apparatus 1 further includes a vacuum chamber 5. The vacuum chamber 5 accommodates the unwinding unit 3, the substrate conveying device 2 a, and the winding unit 4. The vacuum chamber 5 is, for example, a box shape, and is formed in a bowl shape with a hollow inside. Further, the vacuum chamber 5 has a function of keeping the inside airtight with respect to the outside of the vacuum chamber 5. A vacuum pump (not shown) is provided below the vacuum chamber 5. By this vacuum pump, the inside of the vacuum chamber 5 is depressurized to a low pressure state or a vacuum state.
　前記巻出し部３は、図１に示す真空チャンバ５内の上下方向における中央部の左側上方に配置されている。巻出し部３は、巻き付け芯である巻出しコアを有する。この巻出しコアは、例えば、フィルム基材Ｗの幅よりも若干全長の長い円筒状又は円柱状をなす。この巻出しコアの周囲にフィルム基材Ｗを巻回することで基材ロールが形成される。この基材ロールを成膜装置１に取り付けることで、巻出し部３が構成される。この巻出し部３は、その回転中心軸が図１の紙面に向かって垂直方向となるように真空チャンバ５内に配置されている。 The unwinding part 3 is arranged on the upper left side of the central part in the vertical direction in the vacuum chamber 5 shown in FIG. The unwinding unit 3 has an unwinding core that is a winding core. The unwinding core has, for example, a cylindrical shape or a columnar shape slightly longer than the width of the film base W. A base material roll is formed by winding the film base material W around the unwinding core. The unwinding unit 3 is configured by attaching the base material roll to the film forming apparatus 1. The unwinding unit 3 is disposed in the vacuum chamber 5 so that the rotation center axis thereof is perpendicular to the paper surface of FIG.
　成膜装置１は、成膜部を備える。この成膜部は、図１に示す真空チャンバ５内の上下方向における中央より下側の位置であって、巻出し部３の下方の位置に設けられている。成膜部は、巻出し部３から巻き出されたフィルム基材Ｗの表面に対して、例えばスパッタリングやプラズマＣＶＤ等による表面処理（表面処理工程）を施す。本実施形態では、成膜部の一例としてスパッタリング法によるスパッタリング成膜部が開示されている。 The film forming apparatus 1 includes a film forming unit. The film forming unit is provided at a position below the center in the vertical direction in the vacuum chamber 5 shown in FIG. 1 and below the unwinding unit 3. The film forming unit performs a surface treatment (surface treatment step) on the surface of the film substrate W unwound from the unwinding unit 3 by, for example, sputtering or plasma CVD. In the present embodiment, a sputtering film forming unit using a sputtering method is disclosed as an example of the film forming unit.
　基材搬送装置２ａは、前記表面処理工程を実施するスパッタリング成膜部においてフィルム基材Ｗを搬送するための基材搬送ローラを含む。図１は、一般的なスパッタリング成膜部の構成の一部であって前記基材搬送ローラの例である成膜ローラ６及び一対のスパッタ蒸発源Ｔを示している。 The base material transport device 2a includes a base material transport roller for transporting the film base material W in the sputtering film forming unit that performs the surface treatment process. FIG. 1 shows a film forming roller 6 and a pair of sputter evaporation sources T which are a part of the configuration of a general sputtering film forming unit and are examples of the substrate transport roller.
　図１に示すスパッタリング成膜部の成膜ローラ６は、ステンレス材料等によって円筒状又は円柱状に形成されている。当該成膜ローラ６は、円筒状の外周面を有し、これに巻き付けられたフィルム基材Ｗを搬送する。成膜ローラ６は、回転軸１０を有し、この回転軸１０の中心軸である回転中心軸回りに回転する。成膜ローラ６は、前記回転中心軸が前記巻出し部３の回転中心軸と略平行となるように配置されている。 The film forming roller 6 of the sputtering film forming unit shown in FIG. 1 is formed in a cylindrical shape or a columnar shape with a stainless material or the like. The film forming roller 6 has a cylindrical outer peripheral surface, and conveys the film substrate W wound around the film. The film forming roller 6 has a rotation shaft 10 and rotates around a rotation center axis that is a center axis of the rotation shaft 10. The film forming roller 6 is disposed so that the rotation center axis is substantially parallel to the rotation center axis of the unwinding unit 3.
　前記基材搬送装置２ａは、前記成膜ローラ６に加えてガス導入機構１４ａを備える。ガス導入機構１４ａは、基材Ｗと成膜ローラ６との間の伝熱効率を向上させるために、基材Ｗと成膜ローラ６の間に形成される空間にガスを導入するための流路を形成する。成膜ローラ６及び基材搬送装置２ａの詳細な構成については、後述する。 The base material transport device 2 a includes a gas introduction mechanism 14 a in addition to the film forming roller 6. The gas introduction mechanism 14 a is a flow path for introducing gas into a space formed between the base material W and the film forming roller 6 in order to improve the heat transfer efficiency between the base material W and the film forming roller 6. Form. Detailed configurations of the film forming roller 6 and the substrate conveying device 2a will be described later.
　スパッタ蒸発源Ｔは、成膜ローラ６により搬送されるフィルム基材Ｗと対向するように、成膜ローラ６の左右両側にそれぞれ配置されている。スパッタ蒸発源Ｔは、フィルム基材Ｗの表面に堆積させるべき成分を含む蒸発源である。この成分は、周知のとおりグロー放電によってスパッタされ（蒸発させられ）、フィルム基材Ｗの表面へ導かれて当該表面上に堆積する。 The sputter evaporation source T is disposed on each of the left and right sides of the film forming roller 6 so as to face the film substrate W conveyed by the film forming roller 6. The sputter evaporation source T is an evaporation source containing a component to be deposited on the surface of the film substrate W. As is well known, this component is sputtered (evaporated) by glow discharge, guided to the surface of the film substrate W, and deposited on the surface.
　前記巻取り部４は、図１に示す真空チャンバ５内において、図１の紙面に向かって巻出し部３の右側に配置されている。巻取り部４は、基材搬送装置２ａを通って表面処理が施されたフィルム基材Ｗを再びロール状の基材ロールとして巻き取るものであり、巻出し部３と同様の構成を有し、同様に配置されている。 The winding unit 4 is arranged on the right side of the unwinding unit 3 in the vacuum chamber 5 shown in FIG. The winding unit 4 winds the film substrate W that has been surface-treated through the substrate transport apparatus 2a as a roll-shaped substrate roll, and has the same configuration as the unwinding unit 3 , Are arranged similarly.
　前記基材搬送装置２ａは、さらに、図１に示すような第１ガイドローラ７及び第２ガイドローラ８を備える。前記第１ガイドローラ７は、前記巻出し部３と前記成膜ローラ６との間で成膜ローラ６寄りの位置に設けられる。詳しくは、第１ガイドローラ７は、真空チャンバ５の左右方向において、成膜ローラ６の左端よりも真空チャンバ５の中央寄り、つまり、成膜ローラ６の回転軸１０寄りに配置されている。第１ガイドローラ７は、これに与えられた回転中心軸回りに回転可能に配置され、その回転中心軸は前記巻出し部３及び成膜ローラ６の回転中心軸と平行である。第１ガイドローラ７は、成膜ローラ６に対して基材Ｗを常に一定の角度及び方向から搬送することを可能にする。前記第２ガイドローラ８は、巻取り部４と成膜ローラ６との間であって第１ガイドローラ７の右側に配置されている。第２ガイドローラ８は、第１ガイドローラ７と同様の構成を有し、第１ガイドローラ７の外径とほぼ同じ外径を有している。 The base material transport device 2a further includes a first guide roller 7 and a second guide roller 8 as shown in FIG. The first guide roller 7 is provided near the film forming roller 6 between the unwinding unit 3 and the film forming roller 6. Specifically, the first guide roller 7 is disposed closer to the center of the vacuum chamber 5 than the left end of the film forming roller 6 in the left-right direction of the vacuum chamber 5, that is, closer to the rotation shaft 10 of the film forming roller 6. The first guide roller 7 is disposed so as to be rotatable about a rotation center axis provided thereto, and the rotation center axis is parallel to the rotation center axes of the unwinding unit 3 and the film forming roller 6. The first guide roller 7 makes it possible to always transport the substrate W from the film forming roller 6 from a certain angle and direction. The second guide roller 8 is disposed between the winding unit 4 and the film forming roller 6 and on the right side of the first guide roller 7. The second guide roller 8 has the same configuration as the first guide roller 7 and has an outer diameter that is substantially the same as the outer diameter of the first guide roller 7.
　以下に、図２を参照しながら、成膜ローラ６の構成について詳細に説明する。図２（ａ）は、成膜ローラ６を有する基材搬送装置２ａの断面側面図であり、図１に示す成膜装置１の右方又は左方から見たときの基材搬送装置２ａの構成を示している。図２の紙面に向かっての上下方向は、図１に示す成膜装置１の上下方向と一致しており、図１において紙面に対して垂直方向（貫通方向）に示された成膜ローラ６の軸心（回転軸１０）は、図２において、左右方向に沿うように示されている。 Hereinafter, the configuration of the film forming roller 6 will be described in detail with reference to FIG. FIG. 2A is a cross-sectional side view of the base material transport apparatus 2a having the film forming roller 6, and the base material transport apparatus 2a when viewed from the right or left side of the film forming apparatus 1 shown in FIG. The configuration is shown. The vertical direction toward the paper surface of FIG. 2 coincides with the vertical direction of the film forming apparatus 1 shown in FIG. 1, and the film forming roller 6 shown in the direction perpendicular to the paper surface (through direction) in FIG. The axis (rotating shaft 10) is shown in FIG. 2 along the left-right direction.
　成膜ローラ６は、前記回転軸１０に加え、一対のベアリング９と、右端大径部１１ａと、左端大径部１１ｂと、両端大径部１１ａ，１１ｂの間に挟まれるように設けられた中央小径部１２と、を有する。前記各ベアリング９は、真空チャンバ５内で互いに前後方向に離れた位置に配置され、その位置で前記回転軸１０の端部をそれぞれ回転可能に保持する。つまり、回転軸１０は両ベアリング９に保持されながら回転することが可能である。前記両端大径部１１ａ，１１ｂ及び中央小径部１２は前記回転軸１０と一体に回転するように当該回転軸１０の周囲に配置されている。 The film forming roller 6 is provided so as to be sandwiched between a pair of bearings 9, a right end large diameter portion 11a, a left end large diameter portion 11b, and both end large diameter portions 11a and 11b in addition to the rotating shaft 10. A central small-diameter portion 12. The bearings 9 are arranged at positions separated from each other in the front-rear direction in the vacuum chamber 5 and hold the end portions of the rotating shaft 10 at the positions to be rotatable. That is, the rotating shaft 10 can rotate while being held by both bearings 9. The both end large diameter portions 11 a and 11 b and the central small diameter portion 12 are arranged around the rotary shaft 10 so as to rotate integrally with the rotary shaft 10.
　回転軸１０は、一定の外径をもつ円柱又は円筒状の部材である。この回転軸１０の両端の近傍の部位が前記各ベアリング９によって保持されている。このようにして回転軸１０はその長手方向すなわち軸方向に沿った軸心を中心に回転することが可能であり、図示しない駆動装置によって所定の回転速度で回転駆動される。 The rotary shaft 10 is a columnar or cylindrical member having a constant outer diameter. Parts near both ends of the rotating shaft 10 are held by the bearings 9. In this way, the rotary shaft 10 can rotate around its longitudinal direction, that is, the axial center along the axial direction, and is rotationally driven at a predetermined rotational speed by a driving device (not shown).
　この回転軸１０に対し、前記右端大径部１１ａは、前記回転軸１０の長手方向の中央より右側のベアリング９に近い位置に設けられ、前記右端大径部１１ｂは、前記回転軸１０の長手方向の中央より左側のベアリング９に近い位置に設けられている。両端大径部１１ａ，１１ｂは共に、円板状をなし、フィルム基材Ｗの幅方向における端部（側部）側が巻き掛けられるのに十分な所定の厚みを有する。両端大径部１１ａ，１１ｂは、それぞれ、円筒状の第２の外周面及び第３の外周面を有する。これら第２及び第３の外周面の径すなわち両端大径部１１ａ，１１ｂの外径は、望まれる成膜装置１の性能に合わせて任意に決定されるが、少なくとも回転軸１０の外径よりも大きい。 With respect to the rotary shaft 10, the right end large-diameter portion 11 a is provided at a position closer to the bearing 9 on the right side than the center in the longitudinal direction of the rotary shaft 10, and the right end large-diameter portion 11 b is the longitudinal axis of the rotary shaft 10. It is provided at a position close to the bearing 9 on the left side of the center in the direction. Both the large- diameter portions 11a and 11b have a disk shape and have a predetermined thickness sufficient to wind the end (side) side in the width direction of the film base W. Both-end large- diameter portions 11a and 11b each have a cylindrical second outer peripheral surface and a third outer peripheral surface. The diameters of the second and third outer peripheral surfaces, that is, the outer diameters of the large- diameter portions 11a and 11b at both ends are arbitrarily determined according to the desired performance of the film forming apparatus 1, but at least from the outer diameter of the rotating shaft 10. Is also big.
　両端大径部１１ａ，１１ｂは、これらの間に十分な間隔をおいた位置で回転軸１０に対して同軸となるように設けられている。前記間隔は、両端大径部１１ａ，１１ｂの周囲にフィルム基材Ｗの幅方向における両端部（両側部）が巻き掛けられるのに十分で、且つフィルム基材Ｗの幅よりも小さい寸法を有する。両端大径部１１ａ，１１ｂは、回転軸１０の長手方向における中央位置に関してほぼ左右対称となる位置に設けられる。両端大径部１１ａ，１１ｂは、回転軸１０と一体に形成されてもよいし、回転軸１０とは別の部材として形成されて当該回転軸１０に固定具を用いて固定されてもよい。いずれにしても、両端大径部１１ａ，１１ｂは、回転軸１０の回転に合わせて回転することが可能となる。 Both-end large- diameter portions 11a and 11b are provided so as to be coaxial with the rotary shaft 10 at a position having a sufficient space therebetween. The spacing is sufficient for both ends (both sides) in the width direction of the film substrate W to be wound around the large- diameter portions 11a and 11b at both ends, and has a size smaller than the width of the film substrate W. . Both-end large- diameter portions 11a and 11b are provided at positions that are substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10. The large- diameter portions 11a and 11b at both ends may be formed integrally with the rotating shaft 10, or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the large- diameter portions 11 a and 11 b at both ends can be rotated in accordance with the rotation of the rotating shaft 10.
　図２は、前記フィルム基材Ｗが両端大径部１１ａ，１１ｂに巻きかけられている状態を示している。この状態において、フィルム基材Ｗの幅方向における中央の位置が回転軸１０の長手方向における中央の位置にほぼ一致し、フィルム基材Ｗの幅方向における両端部（両側部）が両端大径部１１ａ，１１ｂの第２の外周面上に存在している。フィルム基材Ｗの幅方向における両端が、両端大径部１１ａ，１１ｂ上から回転軸１０の端部側すなわち両外側へはみ出すことはない。このように両端大径部１１ａ，１１ｂに巻きかけられたフィルム基材Ｗは、両端大径部１１ａ，１１ｂの回転によって搬送される。 FIG. 2 shows a state in which the film base W is wound around the large- diameter portions 11a and 11b at both ends. In this state, the center position in the width direction of the film substrate W substantially coincides with the center position in the longitudinal direction of the rotating shaft 10, and both end portions (both side portions) in the width direction of the film substrate W are large diameter portions at both ends. It exists on the 2nd outer peripheral surface of 11a, 11b. Both ends of the film base W in the width direction do not protrude from the ends of the large- diameter portions 11a and 11b to the end side of the rotating shaft 10, that is, both outer sides. Thus, the film base W wound around the large diameter portions 11a and 11b at both ends is conveyed by the rotation of the large diameter portions 11a and 11b at both ends.
　図２を参照して、中央小径部１２は、一定の外径を有する円柱又は円筒状である。中央小径部１２の軸心に沿った長さは両端大径部１１ａ，１１ｂ同士の間隔よりも小さい。中央小径部１２は、両端大径部１１ａ，１１ｂの外径より小さい外径を有する。つまり、中央小径部１２は、両端大径部１１ａ，１１ｂの第２及び第３の外周面の径よりも小さい径をもつ第１の外周面を有する。中央小径部１２は、両端大径部１１ａ，１１ｂ及び回転軸１０に対して同軸となるように設けられている。中央小径部１２は、回転軸１０と一体に形成されてもよいし、回転軸１０とは別の部材として形成されて当該回転軸１０に固定具を用いて固定されてもよい。いずれにしても、中央小径部１２は、回転軸１０の回転に合わせて回転することが可能となる。 Referring to FIG. 2, the central small-diameter portion 12 is a column or cylinder having a constant outer diameter. The length along the axial center of the central small diameter portion 12 is smaller than the interval between the large diameter portions 11a and 11b at both ends. The central small diameter portion 12 has an outer diameter smaller than the outer diameters of the large diameter portions 11a and 11b at both ends. That is, the central small diameter portion 12 has a first outer peripheral surface having a diameter smaller than the diameters of the second and third outer peripheral surfaces of the large diameter portions 11a and 11b at both ends. The central small-diameter portion 12 is provided so as to be coaxial with the large- diameter portions 11 a and 11 b at both ends and the rotating shaft 10. The central small diameter portion 12 may be formed integrally with the rotating shaft 10 or may be formed as a member different from the rotating shaft 10 and fixed to the rotating shaft 10 using a fixture. In any case, the central small diameter portion 12 can be rotated in accordance with the rotation of the rotating shaft 10.
　図２に示すように、中央小径部１２の外径つまり第１の外周面の径が両端大径部１１ａ，１１ｂの外径つまり第２及び第３の外周面の径より小さいので、両端大径部１１ａ，１１ｂの第２及び第３の外周面上に巻き掛けられたフィルム基材Ｗの内側面と中央小径部１２の第１の外周面とが接触することが阻まれ、両面の間に空間（隙間）が形成される。ここで、フィルム基材Ｗと中央小径部１２の第１の外周面との間に形成される空間を、特にガス導入空間という。中央小径部１２の径は、望まれる成膜装置１の性能に合ったガス導入空間が当該中央小径部１２の第１の外周面とフィルム基材Ｗとの間に形成されるように任意に決定される。前記ガス導入機構１４ａは、前記ガス導入空間すなわち前記フィルム基材Ｗと中央小径部１２の第１の外周面との間に形成された空間にガスを導入するための流路を形成する。 As shown in FIG. 2, the outer diameter of the central small-diameter portion 12, that is, the diameter of the first outer peripheral surface is smaller than the outer diameters of the large- diameter portions 11a and 11b at both ends, that is, the diameters of the second and third outer peripheral surfaces. Contact between the inner surface of the film base W wound on the second and third outer peripheral surfaces of the diameter portions 11a and 11b and the first outer peripheral surface of the central small diameter portion 12 is prevented. A space (gap) is formed in the gap. Here, the space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12 is particularly referred to as a gas introduction space. The diameter of the central small diameter portion 12 is arbitrarily set so that a gas introduction space suitable for the desired performance of the film forming apparatus 1 is formed between the first outer peripheral surface of the central small diameter portion 12 and the film substrate W. It is determined. The gas introduction mechanism 14 a forms a flow path for introducing gas into the gas introduction space, that is, the space formed between the film base W and the first outer peripheral surface of the central small diameter portion 12.
　中央小径部１２は、回転軸１０の軸方向すなわち長手方向において、当該中央小径部１２の長手方向における中央の位置が、両端大径部１１ａ，１１ｂの中間位置及び回転軸１０の中央の位置とほぼ一致する位置に設けられる。これによって、成膜ローラ６は、回転軸１０の長手方向における中央位置に関してほぼ左右対称な外形を有している。 The central small-diameter portion 12 has a central position in the longitudinal direction of the central small-diameter portion 12 in the axial direction of the rotating shaft 10, that is, in the longitudinal direction, and an intermediate position between both large- diameter portions 11 a and 11 b and a central position of the rotating shaft 10. It is provided at a position that substantially matches. Thus, the film forming roller 6 has an outer shape that is substantially symmetrical with respect to the center position in the longitudinal direction of the rotating shaft 10.
　以上に述べたように、本実施形態における成膜ローラ６では、回転軸１０が回転することによって、回転軸１０と一体に形成された又は回転軸１０に固定された中央小径部１２及び両端大径部１１ａ，１１ｂが、互いに同期して回転する。 As described above, in the film forming roller 6 according to this embodiment, the rotation shaft 10 rotates, so that the central small-diameter portion 12 formed integrally with the rotation shaft 10 or fixed to the rotation shaft 10 and both ends large. The diameter portions 11a and 11b rotate in synchronization with each other.
　基材搬送装置２ａは、上述の第１ガイドローラ７、第２ガイドローラ８、成膜ローラ６及びガス導入機構１４ａに加え、圧力隔壁１３を有する。図１及び図２に示すように、圧力隔壁１３は、中央小径部１２の第１の外周面のうち基材Ｗと対向しない面、つまり図２（ａ）（ｂ）では上側の面、と向かい合う位置に設けられ、成膜ローラ６における中央小径部１２の第１の外周面及び両端大径部１１ａ，１１ｂの第２及び第３の外周面のうちフィルム基材Ｗと対向しない面を覆うように、第１ガイドローラ７と第２ガイドローラ８の間の開口を塞ぐ。 The substrate transport apparatus 2a includes a pressure partition wall 13 in addition to the first guide roller 7, the second guide roller 8, the film forming roller 6 and the gas introduction mechanism 14a. As shown in FIGS. 1 and 2, the pressure partition wall 13 is a surface of the first outer peripheral surface of the central small diameter portion 12 that does not face the substrate W, that is, the upper surface in FIGS. 2 (a) and 2 (b). The first outer peripheral surface of the central small-diameter portion 12 and the second and third outer peripheral surfaces of the large- diameter portions 11a and 11b on both sides of the film forming roller 6 that are provided at positions facing each other are covered. Thus, the opening between the first guide roller 7 and the second guide roller 8 is closed.
　このように設けられた圧力隔壁１３は、両端大径部１１ａ，１１ｂに接触する基材Ｗ、中央小径部１２、及び両端大径部１１ａ，１１ｂとともに、ほぼ密閉された空間である閉空間を作る。この閉空間は、前記ガス導入空間、すなわち、前記フィルム基材Ｗと中央小径部１２の第１の外周面との間に形成された空間、を含み、これにより当該ガス導入空間はほぼ密閉される。具体的には、前記閉空間に前記ガス導入機構１４ａを通じてガスが導入されることにより前記ガス導入空間の内部の圧力が十分に保持される程度に、当該ガス導入空間が密閉されている。 The pressure partition 13 provided in this way forms a closed space that is a substantially sealed space together with the base material W, the central small diameter portion 12, and the large diameter portions 11a and 11b at both ends, which are in contact with the large diameter portions 11a and 11b at both ends. create. The closed space includes the gas introduction space, that is, a space formed between the film substrate W and the first outer peripheral surface of the central small diameter portion 12, and the gas introduction space is thereby almost sealed. The Specifically, the gas introduction space is sealed to such an extent that the gas is introduced into the closed space through the gas introduction mechanism 14a so that the pressure inside the gas introduction space is sufficiently maintained.
　このようにほぼ密閉された閉空間にガス導入空間が含まれることは、真空環境下においてガス導入空間内の圧力が十分に上昇しないといった問題を回避することを可能にする。つまり、ガス導入空間内を所定の圧力に保持することを可能にし、ガス導入空間内のガスを介してフィルム基材Ｗと中央小径部１２との間の伝熱効率を向上させることが可能となる。 The inclusion of the gas introduction space in the almost closed space as described above makes it possible to avoid the problem that the pressure in the gas introduction space does not rise sufficiently in a vacuum environment. That is, it is possible to maintain the gas introduction space at a predetermined pressure, and it is possible to improve the heat transfer efficiency between the film base W and the central small diameter portion 12 through the gas in the gas introduction space. .
　詳しくは、図２に示すように、圧力隔壁１３は、第１ガイドローラ７に巻き掛けられた基材Ｗと対向する第１気密部１３ａと、第２ガイドローラ８に巻き掛けられた基材Ｗと対向する第２気密部１３ｂと、第１気密部１３ａと第２気密部１３ｂとを相互に接続する接続部１３ｃと、第１壁部１３ｄ及び第２壁部１３ｅと、を有する。第１及び第２壁部１３ｄ，１３ｅは、第１気密部１３ａ、第２気密部１３ｂ、接続部１３ｃを圧力隔壁１３の左右方向（図２（ａ）における左右方向）の両外側からそれぞれ覆うように設けられている。第１壁部１３ｄは、右端大径部１１ａの第２の外周面のうち基材Ｗと対向しない面と対向し、第２壁部１３ｅは、左端大径部１１ｂの第３の外周面のうち基材Ｗと対向しない面と対向する。 Specifically, as shown in FIG. 2, the pressure partition wall 13 includes a first airtight portion 13 a facing the substrate W wound around the first guide roller 7, and a substrate wound around the second guide roller 8. It has the 2nd airtight part 13b facing W, the connection part 13c which mutually connects the 1st airtight part 13a and the 2nd airtight part 13b, and the 1st wall part 13d and the 2nd wall part 13e. The first and second wall portions 13d and 13e cover the first hermetic portion 13a, the second hermetic portion 13b, and the connecting portion 13c from both outer sides in the left-right direction of the pressure bulkhead 13 (left-right direction in FIG. 2A), respectively. It is provided as follows. 13 d of 1st wall parts oppose the surface which does not oppose the base material W among the 2nd outer peripheral surfaces of the right end large diameter part 11a, and the 2nd wall part 13e is the 3rd outer peripheral surface of the left end large diameter part 11b. It faces the surface that does not face the substrate W.
　図２（ｂ）に示すように、第１気密部１３ａは、第１ガイドローラ７の長手方向すなわち軸方向に沿って成膜ローラ６とほぼ同じ長さを有する柱状の部材であり、第１ガイドローラ７の外周面に対向する湾曲面を有している。湾曲面は、第１ガイドローラ７に巻き掛けられる基材Ｗの湾曲に沿った形状、すなわち凹面状をなし、この湾曲面が、第１ガイドローラ７に巻き掛けられた基材Ｗから、例えば１ｍｍ程度の微小な距離だけ離れた位置に配置されている。第２気密部１３ｂは、第１気密部１３ａと同様の構成及び形状を有しており、第２ガイドローラ８に対向する湾曲面を有し、この湾曲面は、第２ガイドローラ８に巻き掛けられた基材Ｗから、例えば１ｍｍ程度の微少な距離だけ離れた位置に配置されている。 As shown in FIG. 2B, the first hermetic portion 13 a is a columnar member having substantially the same length as the film forming roller 6 along the longitudinal direction of the first guide roller 7, that is, the axial direction. It has a curved surface facing the outer peripheral surface of the guide roller 7. The curved surface has a shape along the curvature of the substrate W wound around the first guide roller 7, that is, a concave surface, and this curved surface is formed from, for example, the substrate W wound around the first guide roller 7. It is arranged at a position separated by a minute distance of about 1 mm. The second airtight portion 13b has the same configuration and shape as the first airtight portion 13a, and has a curved surface facing the second guide roller 8, and this curved surface is wound around the second guide roller 8. It is arranged at a position away from the hung base material W by a minute distance of about 1 mm, for example.
　接続部１３ｃは、第１気密部１３ａ及び第２気密部１３ｂの長手方向に沿った長さとほぼ同じ長さを有する平板状の部材である。接続部１３ｃは、上述のように配置された第１気密部１３ａ及び第２気密部１３ｂを互いに接続する。具体的に、接続部１３ｃは、第１気密部１３ａ及び第２気密部１３ｂの長手方向、つまり成膜ローラ６の軸方向と平行な方向、に沿って延び、成膜ローラ６における中央小径部１２の第１の外周面及び両端大径部１１ａ，１１ｂの第２及び第３の外周面のうちフィルム基材Ｗと対向しない面を覆うように両気密部１３ａ，１３ｂ同士を一体につなぎ、これにより、第１ガイドローラ７と第２ガイドローラ８の間の開口を塞ぐ。 The connecting portion 13c is a flat plate-like member having substantially the same length as the length along the longitudinal direction of the first airtight portion 13a and the second airtight portion 13b. The connecting part 13c connects the first airtight part 13a and the second airtight part 13b arranged as described above. Specifically, the connecting portion 13c extends along the longitudinal direction of the first hermetic portion 13a and the second hermetic portion 13b, that is, the direction parallel to the axial direction of the film forming roller 6, and the central small diameter portion in the film forming roller 6 The two airtight portions 13a and 13b are integrally connected so as to cover the first outer peripheral surface of 12 and the second and third outer peripheral surfaces of both end large diameter portions 11a and 11b so as not to face the film base W. Thereby, the opening between the first guide roller 7 and the second guide roller 8 is closed.
　図２（ｂ）に示すように、第１気密部１３ａ、第２気密部１３ｂ、及び接続部１３ｃは、互いに一体につながることで、第１ガイドローラ７と第２ガイドローラ８の間の開口を塞ぐ蓋を構成する。このとき、一体となった第１気密部１３ａ、第２気密部１３ｂ、及び接続部１３ｃの一端側と他端側には、開口が形成されるが、これら一端側の開口及び他端側の開口をそれぞれ塞ぐように前記第１壁部１３ｄ及び第２壁部１３ｅがそれぞれ配置されている。 As shown in FIG. 2B, the first airtight portion 13a, the second airtight portion 13b, and the connection portion 13c are integrally connected to each other, so that an opening between the first guide roller 7 and the second guide roller 8 is obtained. The lid that closes up is constructed. At this time, openings are formed on one end side and the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c. The first wall portion 13d and the second wall portion 13e are respectively disposed so as to close the openings.
　第１壁部１３ｄは、第１ガイドローラ７と第２ガイドローラ８の間の距離とほぼ同じ幅を有する平板状の部材である。第１壁部１３ｄは、前記のように、互いに一体に形成された第１気密部１３ａ、第２気密部１３ｂ、及び接続部１３ｃと両端大径部１１ａ，１１ｂとの間に形成される開口を閉じる。第１壁部１３ｄは、右端大径部１１ａの第２の外周面のうち基材Ｗと接触しない面と対向する位置に配置される。第１壁部１３ｄは、該右端大径部１１ａと対向する面を有し、この面は、右端大径部１１ａの第２の外周面に沿って湾曲する湾曲面である。 The first wall portion 13d is a flat plate-like member having substantially the same width as the distance between the first guide roller 7 and the second guide roller 8. As described above, the first wall portion 13d includes the first airtight portion 13a, the second airtight portion 13b, and the opening formed between the connecting portion 13c and the large- diameter portions 11a and 11b. Close. 13 d of 1st wall parts are arrange | positioned in the position facing the surface which does not contact the base material W among the 2nd outer peripheral surfaces of the right end large diameter part 11a. 13 d of 1st wall parts have a surface facing this right end large diameter part 11a, and this surface is a curved surface curved along the 2nd outer peripheral surface of the right end large diameter part 11a.
　第１壁部１３ｄは、第１ガイドローラ７から成膜ローラ６に搬送される基材Ｗに対向する面と、成膜ローラ６から第２ガイドローラ８に搬送される基材Ｗに対向する面と、を有し、これらの面は基材Ｗの搬送方向に沿って形成されている。このように第１ガイドローラ７及び第２ガイドローラ８と成膜ローラ６との間で基材Ｗの搬送方向に沿って形成された面が、対向する基材Ｗから例えば１ｍｍ程度の微小な距離だけ離れるとともに、右端大径部１１ａに対向する湾曲面が右端大径部１１ａの第２の外周面から例えば１ｍｍ程度の微小な距離だけ離れる位置に、第１壁部１３ｄが配置される。第２壁部１３ｅは、第１壁部１３ｄと同様の構成及び形状を有しており、一体となった第１気密部１３ａ、第２気密部１３ｂ、及び接続部１３ｃの他端側に設けられている。 The first wall portion 13 d faces the surface facing the substrate W conveyed from the first guide roller 7 to the film forming roller 6 and the substrate W conveyed from the film forming roller 6 to the second guide roller 8. And these surfaces are formed along the conveyance direction of the substrate W. Thus, the surface formed along the conveyance direction of the substrate W between the first guide roller 7 and the second guide roller 8 and the film forming roller 6 is as small as about 1 mm from the opposite substrate W, for example. The first wall portion 13d is disposed at a position where the curved surface facing the right end large diameter portion 11a is separated by a minute distance of, for example, about 1 mm from the second outer peripheral surface of the right end large diameter portion 11a. The second wall portion 13e has the same configuration and shape as the first wall portion 13d, and is provided on the other end side of the integrated first airtight portion 13a, second airtight portion 13b, and connection portion 13c. It has been.
　図２に示すように、上述の構成を有する圧力隔壁１３によって、圧力隔壁１３と成膜ローラ６との間に空間が形成され、該空間が、両端大径部１１ａ，１１ｂに巻き掛けられた基材Ｗと中央小径部１２との間に形成されるガス導入空間と連続することで、成膜ローラ６の中央小径部１２の外周全体を包囲する一体の空間が形成される。 As shown in FIG. 2, a space is formed between the pressure partition wall 13 and the film forming roller 6 by the pressure partition wall 13 having the above-described configuration, and this space is wound around the large- diameter portions 11a and 11b at both ends. A continuous space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is formed by being continuous with the gas introduction space formed between the substrate W and the central small-diameter portion 12.
　上述の構成を有する圧力隔壁１３は、成膜ローラ６の中央小径部１２の外周全体を包囲する空間を、その外側の空間であって真空チャンバ５内の空間からほぼ隔絶することができるので、次に説明するガス導入機構１４ａによってガス導入空間の圧力を真空チャンバ５内の圧力とは異なった圧力に調整することが可能となる。 Since the pressure partition wall 13 having the above-described configuration can substantially isolate the space surrounding the entire outer periphery of the central small diameter portion 12 of the film forming roller 6 from the space inside the vacuum chamber 5 that is the outer space. It becomes possible to adjust the pressure of the gas introduction space to a pressure different from the pressure in the vacuum chamber 5 by the gas introduction mechanism 14a described below.
　図２に示すように、ガス導入機構１４ａは、例えば、内部が空洞となった管状の部材、例えばパイプで構成されている。当該パイプには、当該パイプ内の空洞に供給されたガスをパイプの外部に流出させるための複数の孔が長手方向に沿って並ぶ複数の位置にそれぞれ形成されている。このような構成を有する管状のガス導入機構１４ａは、成膜ローラ６の長手方向に沿って延びるように圧力隔壁１３と中央小径部１２の間に配置されている。 As shown in FIG. 2, the gas introduction mechanism 14a is constituted by, for example, a tubular member having a hollow inside, for example, a pipe. In the pipe, a plurality of holes for allowing the gas supplied to the cavity in the pipe to flow out of the pipe are formed at a plurality of positions arranged along the longitudinal direction. The tubular gas introduction mechanism 14 a having such a configuration is disposed between the pressure partition wall 13 and the central small diameter portion 12 so as to extend along the longitudinal direction of the film forming roller 6.
　図２（ａ）に示すように、ガス導入機構１４ａには、ガス供給管及び調整弁１６を介して導入ガス源１５が接続されている。調整弁１６は、ニードル弁などからなり、前記ガス供給管の途中に設けられ、前記ガス導入機構１４ａに供給されるガスの流量を調整する。ガス導入機構１４ａを通じて前記空間内に供給されるガスは、スパッタリング法による成膜に悪影響を及ぼさない不活性ガスなどである。 As shown in FIG. 2 (a), an introduction gas source 15 is connected to the gas introduction mechanism 14a via a gas supply pipe and a regulating valve 16. The adjustment valve 16 is composed of a needle valve or the like, is provided in the middle of the gas supply pipe, and adjusts the flow rate of the gas supplied to the gas introduction mechanism 14a. The gas supplied into the space through the gas introduction mechanism 14a is an inert gas that does not adversely affect the film formation by the sputtering method.
　ガス導入機構１４ａを通じて供給されるガスは、圧力隔壁１３と成膜ローラ６との間に形成された空間を満たすと共に、両端大径部１１ａ，１１ｂに巻き掛けられた基材Ｗと中央小径部１２との間に形成されたガス導入空間に流れ込む。これによって、成膜ローラ６の中央小径部１２の外周全体を包囲する空間がガスで満たされ、減圧された真空チャンバ５内の圧力に対して、ガスで満たされたガス導入空間の圧力が高くなる。この圧力差により、圧力隔壁１３と基材Ｗ及び両端大径部１１ａ，１１ｂとの間に設けられた約１ｍｍの隙間からガスが流出するが、そのガスの流出量とガス導入機構１４ａからのガスの供給量とのバランスによって、前記ガスで満たされたガス導入空間の圧力が決定される。 The gas supplied through the gas introduction mechanism 14a fills the space formed between the pressure partition wall 13 and the film forming roller 6, and the base material W and the central small diameter portion wound around the large diameter portions 11a and 11b at both ends. 12 flows into the gas introduction space formed between the two. As a result, the space surrounding the entire outer periphery of the central small-diameter portion 12 of the film forming roller 6 is filled with gas, and the pressure of the gas introduction space filled with gas is higher than the pressure in the vacuum chamber 5 that has been decompressed. Become. Due to this pressure difference, gas flows out from a gap of about 1 mm provided between the pressure partition wall 13 and the base material W and the large- diameter portions 11a and 11b at both ends. The pressure of the gas introduction space filled with the gas is determined by the balance with the gas supply amount.
　次に、前記圧力隔壁１３によって形成された中央小径部１２の外周を包囲する空間の圧力について考察する。 Next, the pressure in the space surrounding the outer periphery of the central small diameter portion 12 formed by the pressure partition wall 13 will be considered.
　例えば、巾３７０ｍｍ、直径４００ｍｍの円筒状の成膜ローラ６にフィルム状の基材Ｗを成膜ローラ６の中心角１８０度にわたって巻き掛けた状態で、基材Ｗに１０Ｎの張力を与えた場合、基材Ｗが成膜ローラ６の円筒面から受ける面圧（接触圧）は約１４０Ｐａである。ここで、当該基材Ｗの張力が変化した場合、前記面圧は前記張力に比例して変化する。従って、基材Ｗと成膜ローラ６の中央小径部１２の間のガス導入空間にガスを導入（供給）する場合、ガス導入空間内の圧力を基材Ｗが成膜ローラ６から受ける面圧以下とするように導入ガス源１５からの供給ガスの流量を調整弁１６で調整すれば、ガス導入機構１４ａを通じて基材Ｗと成膜ローラ６の中央小径部１２の第１の外周面との間のガス導入空間内に供給されるガスを基材Ｗの接触圧によって当該ガス導入空間内に密閉することが可能となる。 For example, when a tension of 10 N is applied to the base material W in a state where the film-like base material W is wound around the cylindrical film forming roller 6 having a width of 370 mm and a diameter of 400 mm over the central angle of the film forming roller 6 of 180 degrees. The surface pressure (contact pressure) that the substrate W receives from the cylindrical surface of the film forming roller 6 is about 140 Pa. Here, when the tension of the substrate W changes, the surface pressure changes in proportion to the tension. Therefore, when gas is introduced (supplied) into the gas introduction space between the substrate W and the central small diameter portion 12 of the film forming roller 6, the surface pressure that the substrate W receives from the film forming roller 6 in the gas introduction space. If the flow rate of the supply gas from the introduction gas source 15 is adjusted by the regulating valve 16 as described below, the substrate W and the first outer peripheral surface of the central small-diameter portion 12 of the film forming roller 6 through the gas introduction mechanism 14a. It becomes possible to seal the gas supplied in the gas introduction space in the gas introduction space by the contact pressure of the base material W.
　通常、スパッタリング法による成膜プロセスは、０．１Ｐａオーダの圧力下で実施される。０．１Ｐａにおける不活性ガスアルゴン（Ａｒ）の平均自由行程は、約７ｃｍである。この圧力領域では、ガス導入空間の隙間空間のサイズに比べて平均自由行程が十分大きく、分子流とみなして良い。平均自由行程は圧力と反比例の関係にあり、１０～１００Ｐａの圧力領域では、平均自由行程が０．０７～０．７ｍｍであって隙間空間のサイズと同等となる。従ってこの領域は分子流から粘性流に遷移する領域とみなせる。一般に、分子流から粘性流に遷移する領域では、圧力に比例してガス分子の数が増え、ガス導入空間を取り巻く壁面へのガス分子の衝突数も増加する。壁面間の対流による熱収支は、ミクロに見ればガス分子の衝突によるエネルギーのやり取りであり、衝突数が大きくなるほど伝達する熱量も増加する関係となる。従って、熱伝達係数は圧力に比例する。 Usually, the film forming process by the sputtering method is performed under a pressure of the order of 0.1 Pa. The mean free path of the inert gas argon (Ar) at 0.1 Pa is about 7 cm. In this pressure region, the mean free path is sufficiently larger than the size of the gap space of the gas introduction space, and may be regarded as a molecular flow. The mean free path is inversely proportional to the pressure, and in the pressure range of 10 to 100 Pa, the mean free path is 0.07 to 0.7 mm, which is equivalent to the size of the gap space. Therefore, this region can be regarded as a region where a transition is made from a molecular flow to a viscous flow. In general, in a region where a molecular flow transitions to a viscous flow, the number of gas molecules increases in proportion to the pressure, and the number of gas molecules colliding with the wall surface surrounding the gas introduction space also increases. The heat balance due to convection between the wall surfaces is an exchange of energy due to collisions of gas molecules when viewed microscopically, and the amount of heat transferred increases as the number of collisions increases. Therefore, the heat transfer coefficient is proportional to the pressure.
　一方、ガス導入空間の圧力を上述のように高める際、ガス導入空間の周囲の圧力も同時に高くなってしまうと、スパッタリング等の成膜プロセスに影響を及ぼしてしまう。従って、ガス導入空間内外の圧力差を十分に確保するために、圧力隔壁１３の周囲の隙間によるコンダクタンス（流通抵抗）を適切に設計する必要があり、これによって隙間内圧力の上限が規定される。 On the other hand, when the pressure in the gas introduction space is increased as described above, if the pressure around the gas introduction space is also increased at the same time, the film forming process such as sputtering is affected. Therefore, in order to ensure a sufficient pressure difference between the inside and outside of the gas introduction space, it is necessary to appropriately design the conductance (flow resistance) due to the gap around the pressure partition wall 13, thereby defining the upper limit of the pressure in the gap. .
　例えば、図１及び図２において、第１ガイドローラ７及び第２ガイドローラ８の直径を７４ｍｍ、第１ガイドローラ７及び第２ガイドローラ８の幅を３７０ｍｍ、第１ガイドローラ７及び第２ガイドローラ８と圧力隔壁１３との間隙を１ｍｍ、第１ガイドローラ７及び第２ガイドローラ８における基材Ｗの抱き角（巻き掛け角度）を９０度とすれば、第１ガイドローラ７及び第２ガイドローラ８と圧力隔壁１３との間隙が作るガス出口ギャップを、開口１ｍｍ×巾３７０ｍｍ、奥行き６０ｍｍ（直径７４ｍｍの円周長の１／４）の矩形スリットとしてモデル化することができる。実際には、第１ガイドローラ７及び第２ガイドローラ８の曲率による影響や、第１ガイドローラ７及び第２ガイドローラ８の側面のギャップによる影響も生じるが、ここでは考慮しないこととする。 For example, in FIGS. 1 and 2, the diameter of the first guide roller 7 and the second guide roller 8 is 74 mm, the width of the first guide roller 7 and the second guide roller 8 is 370 mm, the first guide roller 7 and the second guide roller If the gap between the roller 8 and the pressure partition wall 13 is 1 mm, and the holding angle (wrapping angle) of the substrate W in the first guide roller 7 and the second guide roller 8 is 90 degrees, the first guide roller 7 and the second guide roller 7 The gas outlet gap formed by the gap between the guide roller 8 and the pressure partition wall 13 can be modeled as a rectangular slit having an opening of 1 mm × width of 370 mm and a depth of 60 mm (¼ of the circumferential length of 74 mm in diameter). Actually, the influence of the curvature of the first guide roller 7 and the second guide roller 8 and the influence of the gap between the side surfaces of the first guide roller 7 and the second guide roller 8 occur, but they are not considered here.
　この場合のコンダクタンスは、モデル化した矩形スリットの式より０．００３［ｍ３／ｓ］程度と見積もられ、ガス導入空間内の圧力を１００Ｐａ、ガス導入空間の外部圧力を０Ｐａとすると、圧力隔壁１３からのガス漏れ量は１８０ｓｃｃｍ程度と見積もることができる。 The conductance in this case is estimated to be about 0.003 [m 3 / s] from the modeled rectangular slit equation, and the pressure in the gas introduction space is 100 Pa and the external pressure in the gas introduction space is 0 Pa. The amount of gas leakage from the partition wall 13 can be estimated to be about 180 sccm.
　このガス漏れ量に相当する量のガスをガス導入機構１４ａを通じて常時導入し、かつ、真空チャンバ５内を排気するためのポンプとしてターボ分子ポンプ（ＴＭＰ）などの排気能力が十分な高真空排気ポンプを用いれば、上記の考察に基づく圧力差の確保が実現可能となる。具体的には、ガス導入空間内の圧力をスパッタリング時のプロセス圧力の約１００～１０００倍の圧力まで高めることが可能となり、これに対応した（分子流ならば圧力に比例する）熱伝達係数の上昇を見込むことができる。 A high vacuum exhaust pump having a sufficient exhaust capability such as a turbo molecular pump (TMP) as a pump for constantly introducing a gas corresponding to the gas leakage amount through the gas introduction mechanism 14a and exhausting the inside of the vacuum chamber 5. Using this makes it possible to secure a pressure difference based on the above consideration. Specifically, the pressure in the gas introduction space can be increased to about 100 to 1000 times the process pressure at the time of sputtering, and the corresponding heat transfer coefficient (which is proportional to the pressure for molecular flow) We can expect a rise.
　従って、本実施形態による基材搬送装置２ａでは、その成膜ローラ６が両端大径部１１ａ，１１ｂと中央小径部１２とを有する２段形状の基材搬送ローラであっても、真空チャンバ５内の圧力をスパッタリングに必要とされる程度の真空に維持しつつ、基材Ｗと基材搬送ローラのうち基材Ｗに接触しない非接触箇所との間の空間にガスを供給しかつその圧力を維持することができる。従って、輻射熱に加えてガス分子を媒体とした熱伝達の寄与度を増加させることができ、成膜プロセスによる入熱で温度が上昇した基材Ｗから成膜ローラ６への伝熱効率が向上する。これにより、スパッタリングなどの成膜プロセスにより基材Ｗに入った熱を十分に逃がすことができ、２段形状を有する基材搬送ローラ、この実施の形態では成膜ローラ６、に搬送される基材Ｗにおける、皺や折れの発生を防ぐことができる。 Therefore, in the base material transport apparatus 2a according to the present embodiment, even if the film forming roller 6 is a two-stage base material transport roller having both large diameter portions 11a and 11b at both ends and a central small diameter portion 12, the vacuum chamber 5 is used. The gas is supplied to the space between the base material W and the non-contact portion that does not contact the base material W among the base material transport rollers while maintaining the internal pressure at a vacuum required for sputtering, and the pressure Can be maintained. Therefore, the contribution of heat transfer using gas molecules as a medium in addition to radiant heat can be increased, and the heat transfer efficiency from the substrate W, whose temperature has been increased by heat input by the film forming process, to the film forming roller 6 is improved. . Thereby, the heat that has entered the substrate W by a film formation process such as sputtering can be sufficiently released, and the substrate conveyed to the substrate conveyance roller having the two-stage shape, in this embodiment, the film formation roller 6. Generation of wrinkles and creases in the material W can be prevented.
　［第２実施形態］
　図３を参照して、本発明の第２実施形態について説明する。図３（ａ）は、第２実施形態による成膜装置１の基材搬送装置２ｂの断面側面図、つまり、基材搬送装置２ｂを成膜装置１の右方又は左方から見たときの図であり、図３（ｂ）は、図３（ａ）におけるＩＩＩＢ－ＩＩＩＢ線に沿った断面図である。 [Second Embodiment]
A second embodiment of the present invention will be described with reference to FIG. FIG. 3A is a cross-sectional side view of the base material transport apparatus 2b of the film forming apparatus 1 according to the second embodiment, that is, when the base material transport apparatus 2b is viewed from the right or left side of the film forming apparatus 1. FIG. 3B is a sectional view taken along line IIIB-IIIB in FIG.
　本実施形態の基材搬送装置２ｂは、圧力隔壁１３を有していない点、及び、前記のパイプからなるガス導入機構１４ａに代えて成膜ローラ６の中央小径部１２に構築されたガス導入機構１４ｂを備える点で、第１実施形態の基材搬送装置２ａと異なる。以下の説明では、これら相違点について詳しく説明する。 The substrate transport apparatus 2b of the present embodiment does not have the pressure partition wall 13, and the gas introduction constructed in the central small diameter portion 12 of the film forming roller 6 in place of the gas introduction mechanism 14a made of the pipe. It differs from the substrate conveying apparatus 2a of 1st Embodiment by the point provided with the mechanism 14b. In the following description, these differences will be described in detail.
　図３に示すように、本実施形態におけるガス導入機構１４ｂは、成膜ローラ６の中央小径部１２に設けられている。ガス導入機構１４ｂは、中央小径部１２に形成された複数のガス流路、つまり複数の穿孔１２ｂを有している。これらの穿孔１２ｂは、前記中央小径部１２の周方向に並び、各穿孔１２ｂは、前記中央小径部１２の径方向に沿って当該中央小径部１２の内部から第１の外周面に向かって放射状に延びる。また、各穿孔１２ｂは、中央小径部１２の長手方向に沿って一端側から他端側にかけて延びるスリット状をなす。図３（ｂ）に示すように、この実施の形態に係る各スリット状の穿孔１２ｂは、中央小径部１２の円形の断面において、円周方向に互いに隣り合うスリット状の穿孔１２ｂ同士のなす中心角がほぼ３０度となるように、つまり周方向に並ぶ１２箇所に、それぞれ形成されている。しかし、これらの穿孔１２ｂの数は限定されず、１２より多くても少なくても良い。 As shown in FIG. 3, the gas introduction mechanism 14 b in the present embodiment is provided in the central small diameter portion 12 of the film forming roller 6. The gas introduction mechanism 14b has a plurality of gas flow paths formed in the central small diameter portion 12, that is, a plurality of perforations 12b. These perforations 12b are arranged in the circumferential direction of the central small diameter portion 12, and each perforation 12b is radial from the inside of the central small diameter portion 12 toward the first outer peripheral surface along the radial direction of the central small diameter portion 12. It extends to. Each perforation 12b has a slit shape extending from one end side to the other end side along the longitudinal direction of the central small diameter portion 12. As shown in FIG. 3 (b), each slit-shaped perforation 12b according to this embodiment has a center formed by slit-shaped perforations 12b adjacent to each other in the circumferential direction in the circular cross section of the central small-diameter portion 12. The corners are formed at 12 points so that the angle is approximately 30 degrees, that is, in the circumferential direction. However, the number of the perforations 12b is not limited and may be more or less than 12.
　但し、後に説明するが、特に成膜ローラ６の回転が低速である場合、円周方向に並ぶ穿孔１２ｂの本数が少な過ぎると、これらの穿孔１２ｂによってガス流路を形成するガス導入機構１４ｂへ供給されるガスの流量が成膜ローラ６の回転位相によって変動してしまい、成膜ローラ６に巻き掛けられた基材Ｗと中央小径部１２との間に形成された空間（ガス導入空間）内の圧力の変動が大きくなってしまう。従って、円周方向に隣り合うスリット状の穿孔１２ｂが形成する中心角をほぼ４５度以下とするようにして、つまり、当該穿孔１２ｂを８箇所以上に形成するようにして、ガス導入機構１４ｂが構築されることが望ましい。 However, as will be described later, particularly when the film forming roller 6 rotates at a low speed, if the number of the perforations 12b arranged in the circumferential direction is too small, the perforations 12b form the gas introduction mechanism 14b that forms a gas flow path. A space (gas introduction space) formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12 because the flow rate of the supplied gas varies depending on the rotational phase of the film forming roller 6. The fluctuation of the pressure inside becomes large. Therefore, the gas introduction mechanism 14b is configured so that the central angle formed by the slit-shaped perforations 12b adjacent in the circumferential direction is approximately 45 degrees or less, that is, the perforations 12b are formed at eight or more locations. It is desirable to be constructed.
　図３（ａ）ではガス流路を構成する各穿孔１２ｂがスリット形状であるが、中央小径部１２の幅方向に沿ったガス流路の形状は特に限定されない。スリット形状の穿孔１２ｂの代わりに、当該スリット形状の穿孔をそれぞれ中央小径部１２の幅方向（軸方向）に複数に分割して、中央小径部１２の幅方向に沿って並列に並ぶ複数の穴状のガス流路を形成してもよい。この場合、中央小径部１２の幅方向に沿って並ぶ複数のガス流路は、中央小径部１２の内部であって軸心に近い部分で互いに連通していることが望ましい。 3A, each of the perforations 12b constituting the gas flow path has a slit shape, but the shape of the gas flow path along the width direction of the central small diameter portion 12 is not particularly limited. Instead of the slit-shaped perforations 12b, the slit-shaped perforations are each divided into a plurality of holes in the width direction (axial direction) of the central small diameter portion 12, and a plurality of holes arranged in parallel along the width direction of the central small diameter portion 12 A gas flow path may be formed. In this case, it is desirable that the plurality of gas flow paths arranged along the width direction of the central small-diameter portion 12 communicate with each other at a portion inside the central small-diameter portion 12 and close to the axis.
　図３（ｂ）に示すように、これら複数の穿孔１２ｂすなわち複数のガス流路を含むガス導入機構１４ｂにおいて、例えば左右方向に沿って水平位置にある穿孔１２ｂに対して、第１実施形態と同様の構成の導入ガス源１５から不活性ガスなどが導入される。導入ガス源１５は、ガス導入機構１４ｂの全ての穿孔１２ｂに対して同時にガスを導入するのではなく、成膜ローラ６の回転とともに回転する複数の穿孔１２ｂのうち水平位置を通過する穿孔１２ｂに対してガスを導入する。 As shown in FIG. 3B, in the gas introduction mechanism 14b including the plurality of perforations 12b, that is, the plurality of gas flow paths, for example, with respect to the perforations 12b in the horizontal position along the left-right direction, An inert gas or the like is introduced from the introduction gas source 15 having the same configuration. The introduction gas source 15 does not introduce the gas into all the perforations 12b of the gas introduction mechanism 14b at the same time, but the perforations 12b passing through the horizontal position among the plurality of perforations 12b rotating with the rotation of the film forming roller 6. In contrast, gas is introduced.
　このように構成することで、図３（ｂ）に矢印で明示するように、それぞれがガス流路を構成する複数の穿孔１２ｂに対して順にガスを導入することができると共に、成膜ローラ６に巻き掛けられた基材Ｗと中央小径部１２との間に形成されたガス導入空間に対して、常に一定の位置及び位相からガスを導入することができる。ガスを導入する位置及び位相を、スパッタ蒸発源Ｔなどプロセス源の配置に対応するように適切に決めることにより、プロセス源背後の熱伝達を高め、より生産性の高いプロセス条件を実現することが可能となる。 With this configuration, as clearly indicated by arrows in FIG. 3B, gas can be introduced sequentially into the plurality of perforations 12b that constitute the gas flow path, and the film forming roller 6 It is possible to always introduce gas from a fixed position and phase into the gas introduction space formed between the base material W wound around and the central small diameter portion 12. By appropriately determining the position and phase for introducing the gas so as to correspond to the arrangement of the process source such as the sputter evaporation source T, heat transfer behind the process source can be improved and more productive process conditions can be realized. It becomes possible.
　ここで、導入ガス源１５に接続された回転しないガス供給管から、中央小径部１２の回転と共に回転する複数のガス導入機構１４ｂへガスを導入する手段として、回転しないガス供給管と回転するガス導入機構１４ｂとの間の狭いギャップを介したガスの導入を考えることができる。この場合、ギャップの開口部から真空チャンバ内に僅かに漏れるガスを、成膜プロセスに及ぼす影響が小さい場所まで引き回したり、同じく影響が小さい場所まで差動排気機構によって誘導したりするなどして、ギャップから僅かに漏れるガスを排出することが可能である。ギャップから漏出しなかった大部分のガスは、成膜ローラ６に形成されたガス導入機構１４ｂに流入することとなる。 Here, as a means for introducing gas from a non-rotating gas supply pipe connected to the introduction gas source 15 to a plurality of gas introduction mechanisms 14b rotating with the rotation of the central small diameter portion 12, a non-rotating gas supply pipe and a rotating gas The introduction of gas through a narrow gap with the introduction mechanism 14b can be considered. In this case, the gas slightly leaking into the vacuum chamber from the opening of the gap is routed to a place where the influence on the film forming process is small, or is induced by a differential exhaust mechanism to a place where the influence is also small, etc. It is possible to discharge gas that leaks slightly from the gap. Most of the gas that has not leaked from the gap flows into the gas introduction mechanism 14 b formed in the film forming roller 6.
　上述したように、本実施形態では、巻き掛けられた基材Ｗが成膜ローラ６から離れていく箇所から当該成膜ローラ６の回転方向とは反対の方向に十分離れたガス流路によってガス導入空間にガスを導入することで、第１実施形態で示したスリット状矩形ダクトに相当する空間が、中央小径部１２と巻き掛けられた基材Ｗとで形成されている。例えば、直径２３０ｍｍ、両端大径部１１ａ，１１ｂと中央小径部１２の段差が１ｍｍの成膜ローラ６では、中心角３０度の円弧長が約６０ｍｍとなる。このとき、基材Ｗが成膜ローラ６から離れる点から回転方向とは反対の方向に中心角にして３０度程度離れた位置にガス流路の噴出し口を設ければ、第１実施形態に係る構成に相当するコンダクタンスを得ることができる。 As described above, in this embodiment, the gas is separated by the gas flow path sufficiently away from the position where the wound substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction of the film forming roller 6. By introducing gas into the introduction space, a space corresponding to the slit-like rectangular duct shown in the first embodiment is formed by the central small diameter portion 12 and the substrate W wound around. For example, in the film forming roller 6 having a diameter of 230 mm and a step between the large diameter portions 11a and 11b at both ends and the central small diameter portion 12 of 1 mm, the arc length with a central angle of 30 degrees is about 60 mm. At this time, if the gas channel ejection port is provided at a position about 30 degrees apart from the point at which the substrate W is separated from the film forming roller 6 in the direction opposite to the rotation direction, the first embodiment Conductance corresponding to the configuration according to the above can be obtained.
　［第３実施形態］
　図４を参照して、本発明の第３実施形態について説明する。図４（ａ）は、第３実施形態による成膜装置１の成膜ローラ６の断面側面図、つまり成膜装置１の右方又は左方から見たときの成膜ローラ６の構成を示し、図４（ｂ）は、図４（ａ）におけるＩＶＢ－ＩＶＢ線に沿った断面図である。 [Third Embodiment]
A third embodiment of the present invention will be described with reference to FIG. FIG. 4A shows a sectional side view of the film forming roller 6 of the film forming apparatus 1 according to the third embodiment, that is, the configuration of the film forming roller 6 when viewed from the right or left side of the film forming apparatus 1. FIG. 4B is a cross-sectional view taken along line IVB-IVB in FIG.
　本実施形態の成膜ローラ６は、第２実施形態の成膜ローラ６と同様の構成であるが、前記ガス導入機構１４ｂに代えて、そのガス流路とは形状の異なるガス流路を形成するガス導入機構１４ｃを具備する点で、第２実施形態とは異なる。以下の説明では、ガス導入機構１４ｃの構成について詳しく説明する。 The film forming roller 6 of the present embodiment has the same configuration as the film forming roller 6 of the second embodiment, but instead of the gas introduction mechanism 14b, a gas flow path having a shape different from the gas flow path is formed. The second embodiment is different from the second embodiment in that a gas introduction mechanism 14c is provided. In the following description, the configuration of the gas introduction mechanism 14c will be described in detail.
　図４に示すように、本実施形態における成膜ローラ６では、両端大径部１１ａ，１１ｂが回転するが、中央小径部１２は回転しない。つまり、基材Ｗは両端大径部１１ａ，１１ｂの回転によって搬送されるが、中央小径部１２は回転しない。ガス導入機構１４ｃは、このような回転しない非回転部材である中央小径部１２に形成されている。 As shown in FIG. 4, in the film forming roller 6 in the present embodiment, the large diameter portions 11a and 11b at both ends rotate, but the central small diameter portion 12 does not rotate. That is, although the base material W is conveyed by rotation of both large diameter parts 11a and 11b, the central small diameter part 12 does not rotate. The gas introduction mechanism 14c is formed in the central small diameter portion 12 which is such a non-rotating member that does not rotate.
　図４に示すように、ガス導入機構１４ｃは、中央小径部１２の第１の外周面に中央小径部１２の長手方向に沿って形成された溝状の第１ガス流路１７ａ及び第２ガス流路１７ｂと、成膜ローラ６のほぼ軸心位置に形成されたガス導入路１９と、ガス導入路１９を前記第１及び第２ガス流路１７ａ，１７ｂにそれぞれつなぐ第１接続路１８ａ及び第２接続路１８ｂと、を有している。 As shown in FIG. 4, the gas introduction mechanism 14 c includes a groove-shaped first gas flow path 17 a and a second gas formed on the first outer peripheral surface of the central small diameter portion 12 along the longitudinal direction of the central small diameter portion 12. A flow path 17b, a gas introduction path 19 formed substantially at the axial center of the film forming roller 6, a first connection path 18a connecting the gas introduction path 19 to the first and second gas flow paths 17a and 17b, and And a second connection path 18b.
　前記第１及び第２ガス流路１７ａ，１７ｂは、中央小径部１２の外周面上に形成された溝であり、互いにほぼ平行に延び、且つこれらの距離は中央小径部１２の第１の外周面の周長の半分より小さい。これらのガス流路１７ａ，１７ｂは、成膜ローラ６に巻き掛けられた基材Ｗと中央小径部１２との間に形成されたガス導入空間における一定の位置（ある所定の位置）に対応するように、配置されている。具体的には、図４（ｂ）において中央小径部１２の中心から真上を向く直線つまり時計の１２時方向を向く直線を基準としてこの直線から時計回り方向に１２０度および２４０度それぞれ離間した位置に前記第１及び第２ガス流路１７ａ，１７ｂが配置されている。 The first and second gas flow paths 17a and 17b are grooves formed on the outer peripheral surface of the central small diameter portion 12, and extend substantially parallel to each other, and these distances are the first outer periphery of the central small diameter portion 12. Less than half the circumference of the surface. These gas flow paths 17 a and 17 b correspond to a certain position (a predetermined position) in the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12. So that it is arranged. Specifically, in FIG. 4B, a straight line that is directly above from the center of the central small-diameter portion 12, that is, a straight line that faces the 12 o'clock direction of the clock, is spaced 120 degrees and 240 degrees clockwise from this straight line. The first and second gas flow paths 17a and 17b are arranged at positions.
　前記ガス導入路１９は、成膜ローラ６のほぼ軸心位置に形成され、このガス導入路１９に第１実施形態に係る導入ガス源１５と同様の構成を有する導入ガス源１５が接続されている。この導入ガス源１５は、前記ガス導入路１９に不活性ガスなどを導入し、導入されたガスは第１及び第２接続路１８ａ，１８ｂをそれぞれ通って第１及び第２ガス流路１７ａ，１７ｂへ導入される。このようにして、成膜ローラ６に巻き掛けられた基材Ｗと中央小径部１２との間に形成されたガス導入空間に対して一定の角度位置でガスを導入することができる。 The gas introduction path 19 is formed substantially at the axial center position of the film forming roller 6, and the introduction gas source 15 having the same configuration as the introduction gas source 15 according to the first embodiment is connected to the gas introduction path 19. Yes. The introduction gas source 15 introduces an inert gas or the like into the gas introduction passage 19, and the introduced gas passes through the first and second connection passages 18a and 18b, respectively, and the first and second gas passages 17a and 17a, 17b. In this way, the gas can be introduced at a fixed angular position with respect to the gas introduction space formed between the base material W wound around the film forming roller 6 and the central small diameter portion 12.
　ガス導入空間において、両ガス流路１７ａ，１７ｂで挟まれた１２０度～２４０度の領域の圧力はその周辺の圧力よりも高い値でほぼ一定になり、主にこの領域で熱伝達が生じる。従って、この領域に向かい合う位置にスパッタ蒸発源Ｔなどのプロセス源を配置することで、成膜プロセスによる熱で温度が上昇した基材Ｗから成膜ローラ６への伝熱効率を向上させることができ、プロセスの生産性を高めることが可能となる。 In the gas introduction space, the pressure in the region of 120 to 240 degrees sandwiched between the two gas flow paths 17a and 17b becomes almost constant at a value higher than the pressure around it, and heat transfer occurs mainly in this region. Therefore, by disposing a process source such as the sputter evaporation source T at a position facing this region, the heat transfer efficiency from the substrate W whose temperature has been increased by the heat of the film formation process to the film formation roller 6 can be improved. It becomes possible to increase the productivity of the process.
　一方、ガス導入空間に導入されたガスは、基材Ｗが成膜ローラ６から離れる角度位置、つまり、前記の基準となる上向きの直線からほぼ９０度及び２７０度離間した位置、から、周辺空間に流出する。つまり、９０～１２０度、及び２４０～２７０度の領域では、導入されたガスが、常に周辺空間への流出側に向かって一定方向に流れる。 On the other hand, the gas introduced into the gas introduction space is from the angular position at which the substrate W is separated from the film forming roller 6, that is, the positions separated from the reference upward straight line by approximately 90 degrees and 270 degrees. To leak. That is, in the regions of 90 to 120 degrees and 240 to 270 degrees, the introduced gas always flows in a certain direction toward the outflow side to the peripheral space.
　非回転部である中央小径部１２に形成されるガス導入路１９、第１及び第２接続路１８ａ，１８ｂ、及び第１及び第２ガス流路１７ａ，１７ｂの構造と位置は、スパッタ蒸発源Ｔなど周辺のプロセス源の配置等に応じて適宜決定することができる。 The structure and position of the gas introduction path 19, the first and second connection paths 18 a and 18 b, and the first and second gas paths 17 a and 17 b formed in the central small-diameter section 12 that is a non-rotating section are the sputter evaporation source. It can be appropriately determined according to the arrangement of peripheral process sources such as T.
　この第３実施形態においても、第１実施形態で説明した構成に相当するコンダクタンスを得ることができる。 Also in the third embodiment, conductance corresponding to the configuration described in the first embodiment can be obtained.
　［第４実施形態］
　図５を参照して、本発明の第４実施形態について説明する。図５（ａ）は、第４実施形態による成膜装置１の基材搬送装置２ｄの断面側面図、つまり、成膜装置１の右方又は左方から基材搬送装置２ｄを見た図であり、図５（ｂ）は、図５（ａ）におけるＶＢ－ＶＢ線に沿った断面図である。 [Fourth Embodiment]
The fourth embodiment of the present invention will be described with reference to FIG. FIG. 5A is a cross-sectional side view of the base material transport device 2d of the film forming apparatus 1 according to the fourth embodiment, that is, a view of the base material transport device 2d viewed from the right or left side of the film forming device 1. FIG. 5B is a cross-sectional view taken along the line VB-VB in FIG.
　本実施形態の基材搬送装置２ｄは、第１実施形態の基材搬送装置２ａとほぼ同様の構成を有しているが、中央小径部１２の内部に昇降温機構を有している点で第１実施形態の基材搬送装置２ａとは異なる。以下の説明では、昇降温機構の構成について詳しく説明する。 The base material transport device 2d of the present embodiment has substantially the same configuration as the base material transport device 2a of the first embodiment, but has a temperature raising / lowering mechanism inside the central small diameter portion 12. It is different from the substrate conveying device 2a of the first embodiment. In the following description, the configuration of the temperature raising / lowering mechanism will be described in detail.
　昇降温機構は、中央小径部１２の内部に設けられた複数の昇降温部つまり複数の昇降温媒体経路２０を有し、これらの昇降温媒体経路２０に例えば熱媒体油や水といった流体が昇降温媒体として循環することにより、当該中央小径部１２の温度を変化させる。前記各昇降温媒体経路２０は、例えばパイプその他の管状の部材により構成される。あるいは、各昇降温部は、中央小径部１２に埋め込まれたシースヒータによって構成されてもよい。 The temperature raising / lowering mechanism has a plurality of temperature raising / lowering portions provided inside the central small diameter portion 12, that is, a plurality of temperature raising / lowering medium paths 20, and fluid such as heat medium oil and water is raised and lowered in these temperature raising / lowering medium paths 20. By circulating as a heating medium, the temperature of the central small diameter portion 12 is changed. Each of the heating / warming medium paths 20 is constituted by, for example, a pipe or other tubular member. Or each temperature raising / lowering part may be comprised by the sheath heater embedded in the center small diameter part 12. FIG.
　図５（ａ）に一点鎖線で示すように、昇降温媒体経路２０は、前記昇降温媒体を成膜ローラ６の外部から中央小径部１２の内部に導入するように配置される。つまり、昇降温媒体経路２０は、中央小径部１２の内部に埋め込まれる部分と、この部分と成膜ローラ６の外部の熱媒体供給源とを接続する部分と、を有する。特に、前記中央小径部１２の内部に埋め込まれる部分は、この中央小径部１２の第１の外周面のうち基材Ｗと対向する面に沿うように配置される。具体的に、中央小径部１２の内部には、図５（ｂ）に示すような３つの領域ＺＯＮＥ１，ＺＯＮＥ２及びＺＯＮＥ３が設定され、各領域ＺＯＮＥ１～ＺＯＮＥ３にそれぞれ互いに独立した前記昇降温媒体経路２０が設けられている。領域ＺＯＮＥ１～ＺＯＮＥ３のそれぞれに設けられた昇降温媒体経路２０は、その領域内で基材Ｗと対向する面に沿って一巡した後に、成膜ローラ６の外部へ導かれるように配置される。 As shown by the one-dot chain line in FIG. 5A, the temperature raising / lowering medium path 20 is arranged so as to introduce the temperature raising / lowering medium from the outside of the film forming roller 6 to the inside of the central small diameter portion 12. That is, the temperature raising / lowering medium path 20 has a portion embedded in the central small diameter portion 12 and a portion connecting this portion and the heat medium supply source outside the film forming roller 6. In particular, a portion embedded in the central small diameter portion 12 is arranged along a surface of the first outer peripheral surface of the central small diameter portion 12 that faces the substrate W. Specifically, three regions ZONE1, ZONE2, and ZONE3 as shown in FIG. 5B are set inside the central small diameter portion 12, and the heating / cooling medium path 20 independent of each other in each of the regions ZONE1 to ZONE3. Is provided. The heating / cooling medium path 20 provided in each of the zones ZONE1 to ZONE3 is arranged so as to be guided outside the film forming roller 6 after making a round along the surface facing the substrate W in the zone.
　本実施形態における成膜ローラ６では、両端大径部１１ａ，１１ｂが回転するが中央小径部１２は回転しない。つまり、回転する両端大径部１１ａ，１１ｂによって基材Ｗは搬送されるが、中央小径部１２は回転しない。 In the film forming roller 6 in the present embodiment, the large- diameter portions 11a and 11b at both ends rotate, but the central small-diameter portion 12 does not rotate. That is, although the base material W is conveyed by the rotating large- diameter portions 11a and 11b at both ends, the central small-diameter portion 12 does not rotate.
　前記のように互いに独立に配置された管状の昇降温媒体経路２０内を、加熱又は冷却された温度制御媒体が循環することで、中央小径部１２における各領域ＺＯＮＥ１～ＺＯＮＥ３の基材Ｗと対向する各面の温度を独立に制御する、つまり上昇又は下降させることができ、これにより、中央小径部１２と対向する基材Ｗの温度を上昇又は下降させることができる。 The heated or cooled temperature control medium circulates in the tubular heating / cooling medium path 20 arranged independently of each other as described above, so that it faces the base material W of each of the regions ZONE1 to ZONE3 in the central small diameter portion 12. The temperature of each surface to be controlled can be controlled independently, that is, it can be raised or lowered, whereby the temperature of the substrate W facing the central small diameter portion 12 can be raised or lowered.
　このように、複数の昇降温媒体経路２０を含む昇降温機構は、中央小径部１２の基材Ｗと対向する面の温度を複数の領域ごとに相互独立して昇降させることを可能にし、これにより、単一の成膜ローラ６上で、中央小径部１２に対向する基材Ｗの温度を複数の成膜プロセスにそれぞれ対応する温度に調節することを実現するものである。つまり、本実施形態の基材搬送装置２ｄによれば、成膜プロセスの温度毎に複数の成膜ローラ６を用いる必要がなくなるので、真空チャンバ５の容量を小さくすることができ、ひいては成膜装置１を小型化することができる。 As described above, the temperature raising / lowering mechanism including the plurality of temperature raising / lowering medium paths 20 enables the temperature of the surface of the central small diameter portion 12 facing the base material W to be raised and lowered independently for each of a plurality of regions. Thus, on the single film forming roller 6, it is possible to adjust the temperature of the substrate W facing the central small-diameter portion 12 to a temperature corresponding to each of a plurality of film forming processes. That is, according to the substrate transport apparatus 2d of the present embodiment, since it is not necessary to use a plurality of film forming rollers 6 for each temperature of the film forming process, the capacity of the vacuum chamber 5 can be reduced, and as a result, film forming is performed. The apparatus 1 can be reduced in size.
　この第４実施形態では、スパッタリングやプラズマＣＶＤ等の表面処理（成膜処理）を実施する成膜装置１を例示して、この成膜装置１で用いられる基材搬送装置２ｄの特徴について説明した。しかし、本実施形態で説明した構成を有する基材搬送装置２ｄは、フィルム状の基材Ｗを搬送する際に基材Ｗの温度を制御する必要のある装置であれば、成膜装置１に限らず様々な装置に適用できることは明らかである。 In the fourth embodiment, the film forming apparatus 1 that performs surface treatment (film forming process) such as sputtering or plasma CVD is exemplified, and the characteristics of the substrate transfer apparatus 2d used in the film forming apparatus 1 are described. . However, if the base material transport apparatus 2d having the configuration described in the present embodiment is an apparatus that needs to control the temperature of the base material W when transporting the film-shaped base material W, the base film transport apparatus 2d is connected to the film forming apparatus 1. Obviously, the present invention can be applied to various devices.
　ところで、今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。特に、今回開示された実施形態において、明示的に開示されていない事項、例えば、動作条件や測定条件、各種パラメータ、構成物の寸法、重量、体積などは、当業者が通常実施する範囲を逸脱するものではなく、通常の当業者であれば、容易に想定することが可能な値を採用している。 By the way, the embodiment disclosed this time should be considered as illustrative in all points and not restrictive. In particular, in the embodiment disclosed this time, matters that are not explicitly disclosed, such as operating conditions and measurement conditions, various parameters, dimensions, weights, volumes, and the like of a component deviate from a range that is normally implemented by those skilled in the art. Instead, values that can be easily assumed by those skilled in the art are employed.
　以上のように、本発明によれば、基材の表面に成膜処理を施す成膜装置に設けられる基材搬送装置であって、基材搬送ローラを備え、かつ、当該基材搬送ローラの中央部分と基材との接触を避けながら、その非接触箇所における伝熱効率を向上させることが可能なものが提供される。この装置は、前記基材を搬送する基材搬送ローラと、この基材搬送ローラと基材との間にガスを導入するガス導入機構と、を備える。前記基材搬送ローラは、当該基材搬送ローラのうちその軸心に沿った軸方向における中央部を構成する部分であって第１の外周面を有する中央小径部と、前記中央小径部の軸方向の両外側にそれぞれ位置し、前記基材と接触する第２の外周面及び第３の外周面をそれぞれ有し、前記基材搬送ローラの軸心周りに回転することで前記基材を搬送する両端大径部と、を有する。前記第２の外周面及び第３の外周面は、当該第２の外周面及び第３の外周面と接触する基材が前記第１の外周面と接触することを阻止するように当該第１の外周面の径よりも大きな径を有する。前記ガス導入機構は、前記基材と前記中央小径部の前記第１の外周面との間に形成される空間にガスを導入するためのガス導入流路を有する。 As described above, according to the present invention, there is provided a base material transport device provided in a film forming apparatus that performs a film forming process on the surface of a base material, the base material transport roller including the base material transport roller, What can improve the heat transfer efficiency in the non-contact location is provided, avoiding a contact with a center part and a base material. The apparatus includes a base material transport roller for transporting the base material, and a gas introduction mechanism for introducing gas between the base material transport roller and the base material. The base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller. And a large diameter portion at both ends. The second outer peripheral surface and the third outer peripheral surface are configured to prevent the base material in contact with the second outer peripheral surface and the third outer peripheral surface from contacting the first outer peripheral surface. It has a diameter larger than the diameter of the outer peripheral surface. The gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
　この基材搬送装置によれば、基材搬送ローラの両端大径部の第２及び第３の外周面が中央小径部の第１の外周面の径よりも大きな径を有することにより、当該第２及び第３の外周面に基材が接触した状態で当該基材が第１の外周面に接触するのを阻止することができる。しかも、この第１の外周面と基材との間にガス導入機構のガス導入流路を通じてガスを導入することが可能であり、このガスを媒体として前記第１の外周面と前記基材との間に高い伝熱効率を確保することが可能である。 According to this base material transport device, the second and third outer peripheral surfaces of the large-diameter portions at both ends of the base material transport roller have a diameter larger than the diameter of the first outer peripheral surface of the central small-diameter portion. The base material can be prevented from coming into contact with the first outer peripheral surface in a state where the base material is in contact with the second and third outer peripheral surfaces. Moreover, it is possible to introduce gas through the gas introduction flow path of the gas introduction mechanism between the first outer peripheral surface and the base material, and using the gas as a medium, the first outer peripheral surface and the base material It is possible to ensure high heat transfer efficiency during this period.
　本発明に係る基材搬送装置は、前記中央小径部の第１の外周面のうち前記基材と対向しない面と向かい合う位置に設けられた圧力隔壁をさらに備え、この圧力隔壁は記両端大径部の第２の外周面及び第３の外周面に接触する基材と前記中央小径部と前記両端大径部とともに閉空間を囲むように配置され、前記基材と前記中央小径部の前記第１の外周面との間に形成される空間が前記閉空間に含まれることが、好ましい。このように前記圧力隔壁等によって囲まれる閉空間に前記基材と前記中央小径部の前記第１の外周面との間の空間が含まれることにより、当該閉空間の外側の空間が例えば排気により減圧されても前記基材と前記中央小径部の前記第１の外周面との間の空間にガスを導入することが可能になる。 The base material conveying apparatus according to the present invention further includes a pressure partition wall provided at a position facing a surface not facing the base material of the first outer peripheral surface of the central small diameter portion, and the pressure partition wall has a large diameter at both ends. The base material contacting the second outer peripheral surface and the third outer peripheral surface of the portion, the central small diameter portion, and the large diameter portions at both ends are disposed so as to surround a closed space, and the base material and the central small diameter portion It is preferable that a space formed between the outer peripheral surface of the first space is included in the closed space. Thus, the space between the base material and the first outer peripheral surface of the central small-diameter portion is included in the closed space surrounded by the pressure partition wall or the like, so that the space outside the closed space is, for example, exhausted. Even if the pressure is reduced, it becomes possible to introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion.
　前記ガス導入機構は、前記ガス導入流路として、前記中央小径部の内部から当該中央小径部の第１の外周面に向かって延びる流路であって当該中央小径部の内部に供給されるガスを前記基材と前記中央小径部の間に形成される空間に導入する流路を有することが、好ましい。このガス導入機構は、前記中央小径部を有効に利用して前記基材と前記中央小径部の前記第１の外周面との間の空間にガスを効率よく導入することを可能にする。 The gas introduction mechanism is a gas channel that extends from the inside of the central small-diameter portion toward the first outer peripheral surface of the central small-diameter portion as the gas introduction channel, and is supplied to the inside of the central small-diameter portion. It is preferable to have a flow path that introduces the liquid into a space formed between the base material and the central small diameter portion. This gas introduction mechanism makes it possible to efficiently introduce gas into the space between the base material and the first outer peripheral surface of the central small diameter portion by effectively using the central small diameter portion.
　この場合、前記ガス導入流路は、前記基材と前記中央小径部の第１の外周面との間に形成される空間に対して当該空間における一定の位置からガスを導入するものであるのが、好ましい。 In this case, the gas introduction channel introduces gas from a certain position in the space with respect to the space formed between the base material and the first outer peripheral surface of the central small diameter portion. Is preferred.
　また、本発明に係る基材搬送装置は、前記中央小径部の温度を変化させる昇降温機構をさらに備え、前記昇降温機構は、前記中央小径部の第１の外周面のうち前記基材と対向する面の温度を複数の領域において互いに独立して変化させる複数の昇降温部を含むことが、好ましい。これにより、単一の基材搬送ローラ上で、中央小径部の第１の外周面に対向する基材Ｗの温度を複数の成膜プロセスにそれぞれ対応する温度に調節することが可能になる。 Moreover, the base material conveyance apparatus which concerns on this invention is further equipped with the temperature raising / lowering mechanism which changes the temperature of the said center small diameter part, and the said temperature raising / lowering mechanism is the said base material among the 1st outer peripheral surfaces of the said center small diameter part. It is preferable to include a plurality of heating / cooling units that change the temperatures of the opposing surfaces independently of each other in a plurality of regions. Thereby, it becomes possible to adjust the temperature of the base material W facing the first outer peripheral surface of the central small diameter portion to a temperature corresponding to each of a plurality of film forming processes on a single base material transport roller.

Claims (5)

  1. 　基材の表面に成膜処理を施す成膜装置に設けられる基材搬送装置であって、
    　前記基材を搬送する基材搬送ローラと、
    　この基材搬送ローラと基材との間にガスを導入するガス導入機構と、を備え、
    　前記基材搬送ローラは、当該基材搬送ローラのうちその軸心に沿った軸方向における中央部を構成する部分であって第１の外周面を有する中央小径部と、前記中央小径部の軸方向の両外側にそれぞれ位置し、前記基材と接触する第２の外周面及び第３の外周面をそれぞれ有し、前記基材搬送ローラの軸心周りに回転することで前記基材を搬送する一対の両端大径部と、を有し、前記第２の外周面及び前記第３の外周面は、当該第２の外周面及び第３の外周面と接触する基材が前記第１の外周面と接触することを阻止するように当該第１の外周面の径よりも大きな径を有し、
    　前記ガス導入機構は、前記基材と前記中央小径部の前記第１の外周面との間に形成される空間にガスを導入するためのガス導入流路を有する。     A substrate transport device provided in a film forming apparatus for performing a film forming process on the surface of a substrate,
    A base material transport roller for transporting the base material;
    A gas introduction mechanism for introducing gas between the base material transport roller and the base material,
    The base material transport roller is a portion constituting a central portion in the axial direction along the axis of the base material transport roller, and a central small diameter portion having a first outer peripheral surface, and an axis of the central small diameter portion Each of which has a second outer peripheral surface and a third outer peripheral surface which are respectively located on both outer sides in the direction and come into contact with the base material, and transports the base material by rotating around the axis of the base material transport roller. The second outer peripheral surface and the third outer peripheral surface of the base material contacting the second outer peripheral surface and the third outer peripheral surface are the first outer peripheral surface and the third outer peripheral surface. Having a diameter larger than the diameter of the first outer peripheral surface so as to prevent contact with the outer peripheral surface;
    The gas introduction mechanism has a gas introduction flow path for introducing gas into a space formed between the base material and the first outer peripheral surface of the central small diameter portion.
  2. 　請求項１に記載の基材搬送装置であって、前記中央小径部の第１の外周面のうち前記基材と対向しない面と向かい合う位置に設けられた圧力隔壁をさらに備え、この圧力隔壁は記両端大径部の第２の外周面及び第３の外周面に接触する基材と前記中央小径部と前記両端大径部とともに閉空間を囲むように配置され、前記基材と前記中央小径部の前記第１の外周面との間に形成される空間が前記閉空間に含まれる、基材搬送装置。 The base material conveying apparatus according to claim 1, further comprising a pressure partition wall provided at a position facing a surface of the first outer peripheral surface of the central small diameter portion that does not face the base material, The base material contacting the second outer peripheral surface and the third outer peripheral surface of the large diameter portion at both ends, the central small diameter portion, and the large diameter portions at both ends are disposed so as to surround a closed space, and the base material and the central small diameter The base material conveying apparatus in which the space formed between the said 1st outer peripheral surfaces of a part is contained in the said closed space.
  3. 　請求項１に記載の基材搬送装置であって、前記ガス導入機構は、前記ガス導入流路として、前記中央小径部の内部から当該中央小径部の第１の外周面に向かって延びる流路であって当該中央小径部の内部に供給されるガスを前記基材と前記中央小径部の間に形成される空間に導入する流路を有する、基材搬送装置。 The base material conveying apparatus according to claim 1, wherein the gas introduction mechanism is a flow path extending from the inside of the central small diameter portion toward the first outer peripheral surface of the central small diameter portion as the gas introduction flow path. A base material transport apparatus having a flow path for introducing a gas supplied to the inside of the central small diameter portion into a space formed between the base material and the central small diameter portion.
  4. 　請求項３に記載の基材搬送装置であって、前記ガス導入流路は、前記基材と前記中央小径部の第１の外周面との間に形成される空間に対して当該空間における一定の位置からガスを導入するものである、基材搬送装置。 It is a base material conveying apparatus of Claim 3, Comprising: The said gas introduction flow path is constant in the said space with respect to the space formed between the said base material and the 1st outer peripheral surface of the said center small diameter part. A base material conveying device for introducing gas from the position of the substrate.
  5. 　請求項１に記載の基材搬送装置であって、前記中央小径部の温度を変化させる昇降温機構をさらに備え、前記昇降温機構は、前記中央小径部の第１の外周面のうち前記基材と対向する面の温度を複数の領域において互いに独立して変化させる複数の昇降温部を含む、基材搬送装置。 The base material conveying apparatus according to claim 1, further comprising a temperature raising and lowering mechanism that changes a temperature of the central small diameter portion, wherein the temperature raising and lowering mechanism is the base of the first outer peripheral surface of the central small diameter portion. A base material conveying apparatus including a plurality of temperature raising and lowering parts that independently change the temperature of a surface facing a material in a plurality of regions.
PCT/JP2013/006902 2012-12-21 2013-11-25 Substrate transport device WO2014097544A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-279532 2012-12-21
JP2012279532A JP5946402B2 (en) 2012-12-21 2012-12-21 Substrate transport device

Publications (1)

Publication Number Publication Date
WO2014097544A1 true WO2014097544A1 (en) 2014-06-26

Family

ID=50977910

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/006902 WO2014097544A1 (en) 2012-12-21 2013-11-25 Substrate transport device

Country Status (3)

Country Link
JP (1) JP5946402B2 (en)
TW (1) TW201433527A (en)
WO (1) WO2014097544A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107215702A (en) * 2017-06-09 2017-09-29 浙江汇锋薄膜科技有限公司 A kind of air-flotation type film-guiding device on the Preparation equipment of conductive film
CN107265152A (en) * 2017-06-09 2017-10-20 浙江汇锋薄膜科技有限公司 A kind of blowing tensioning apparatus on the Preparation equipment of conductive film

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6233262B2 (en) * 2014-09-30 2017-11-22 住友金属鉱山株式会社 Long film transport and cooling roll, and long film processing apparatus equipped with the roll
JP6233292B2 (en) * 2014-12-23 2017-11-22 住友金属鉱山株式会社 Long film transport and cooling roll, and long film processing apparatus equipped with the roll

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009060597A1 (en) * 2007-11-06 2009-05-14 Panasonic Corporation Thin film forming apparatus and forming method for thin film
US20100266766A1 (en) * 2009-04-21 2010-10-21 Stefan Hein Guiding devices and methods for contactless guiding of a web in a web coating process
JP2010242200A (en) * 2009-04-09 2010-10-28 Toyota Motor Corp Apparatus for producing thin film member and method for producing the same
WO2010122742A1 (en) * 2009-04-22 2010-10-28 パナソニック株式会社 Apparatus for forming thin film and method for forming thin film
JP2011038162A (en) * 2009-08-13 2011-02-24 Fuji Electric Holdings Co Ltd Apparatus for manufacturing thin film layered product
WO2012172722A1 (en) * 2011-06-15 2012-12-20 パナソニック株式会社 Substrate conveyance roller, thin film manufacturing device and thin film manufacturing method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009060597A1 (en) * 2007-11-06 2009-05-14 Panasonic Corporation Thin film forming apparatus and forming method for thin film
JP2010242200A (en) * 2009-04-09 2010-10-28 Toyota Motor Corp Apparatus for producing thin film member and method for producing the same
US20100266766A1 (en) * 2009-04-21 2010-10-21 Stefan Hein Guiding devices and methods for contactless guiding of a web in a web coating process
WO2010122742A1 (en) * 2009-04-22 2010-10-28 パナソニック株式会社 Apparatus for forming thin film and method for forming thin film
JP2011038162A (en) * 2009-08-13 2011-02-24 Fuji Electric Holdings Co Ltd Apparatus for manufacturing thin film layered product
WO2012172722A1 (en) * 2011-06-15 2012-12-20 パナソニック株式会社 Substrate conveyance roller, thin film manufacturing device and thin film manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107215702A (en) * 2017-06-09 2017-09-29 浙江汇锋薄膜科技有限公司 A kind of air-flotation type film-guiding device on the Preparation equipment of conductive film
CN107265152A (en) * 2017-06-09 2017-10-20 浙江汇锋薄膜科技有限公司 A kind of blowing tensioning apparatus on the Preparation equipment of conductive film

Also Published As

Publication number Publication date
TW201433527A (en) 2014-09-01
JP2014122394A (en) 2014-07-03
JP5946402B2 (en) 2016-07-06

Similar Documents

Publication Publication Date Title
JP5868309B2 (en) Substrate transport roll
JP5895179B2 (en) Substrate transport roller, thin film manufacturing apparatus, and thin film manufacturing method
JP4786772B2 (en) Thin film manufacturing apparatus, thin film manufacturing method, and substrate transfer roller
WO2014097544A1 (en) Substrate transport device
JP6360882B2 (en) Deposition platform for flexible substrates and method of operation thereof
JP2020125544A (en) Apparatus for depositing film on substrate and method for providing gas separation between two deposition source of deposition apparatus
TWI619827B (en) Apparatus for depositing thin film on substrate and method of depositing thin film thereon
US20160340776A1 (en) Roller for spreading of a flexible substrate, apparatus for processing a flexible substrate and method of operating thereof
JP6277277B2 (en) Substrate spreading device for vacuum processing apparatus, vacuum processing apparatus having substrate spreading device, and method of operating the same
TWI620828B (en) Deposition apparatus and method
KR102509129B1 (en) Guiding devices and web coating process
JP5009845B2 (en) Deposition equipment
KR20160073404A (en) Roller device for vacuum deposition arrangement, vacuum deposition arrangement with roller and mothod for operating a roller
JP6206374B2 (en) Cylindrical support for long film and long film processing apparatus having the same
JP7244362B2 (en) transfer room
JP5795745B2 (en) Deposition equipment
TW201103853A (en) Guiding devices and methods for contactless guiding of a web in a web coating process

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13864319

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13864319

Country of ref document: EP

Kind code of ref document: A1