WO2014075881A1 - Radiation source and method for lithography - Google Patents
Radiation source and method for lithography Download PDFInfo
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- WO2014075881A1 WO2014075881A1 PCT/EP2013/072124 EP2013072124W WO2014075881A1 WO 2014075881 A1 WO2014075881 A1 WO 2014075881A1 EP 2013072124 W EP2013072124 W EP 2013072124W WO 2014075881 A1 WO2014075881 A1 WO 2014075881A1
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- debris
- radiation
- radiation source
- fuel
- receiving surface
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/16—Vessels; Containers; Shields associated therewith
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2235/00—X-ray tubes
- H01J2235/16—Vessels
- H01J2235/165—Shielding arrangements
Definitions
- the present invention relates to a method and apparatus for generating radiation for use in lithographic applications for device manufacture.
- a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
- a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
- a patterning device which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
- This pattern can be transferred onto a target portion (e.g., comprising part of, one, or several dies) on a substrate (e.g., a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation- sensitive material (resist) provided on the substrate.
- a single substrate will contain a network of adjacent target portions that are successively patterned.
- Lithography is widely recognized as one of the key steps in the manufacture of
- lithography is becoming a more critical factor for enabling miniature IC or other devices and/or structures to be manufactured.
- Equation (1) Rayleigh criterion for resolution as shown in equation (1): where ⁇ is the wavelength of the radiation used, NA is the numerical aperture of the projection system used to print the pattern, ki is a process dependent adjustment factor, also called the Rayleigh constant, and CD is the feature size (or critical dimension) of the printed feature. It follows from equation (1) that reduction of the minimum printable size of features can be obtained in three ways: by shortening the exposure wavelength ⁇ , by increasing the numerical aperture NA or by decreasing the value of ki.
- EUV radiation is electromagnetic radiation having a wavelength within the range of 5-20 nm, for example within the range of 13-14 nm. It has further been proposed that EUV radiation with a wavelength of less than 10 nm could be used, for example within the range of 5-10 nm such as 6.7 nm or 6.8 nm. Such radiation is termed extreme ultraviolet radiation or soft x-ray radiation. Possible sources include, for example, laser-produced plasma sources, discharge plasma sources, or sources based on synchrotron radiation provided by an electron storage ring.
- EUV radiation may be produced using a plasma.
- a radiation system for producing EUV radiation may include an excitation beam such as a laser (for instance and infra-red laser) for exciting a fuel to provide the plasma, and a radiation source for containing the plasma.
- the plasma may be created, for example, by directing a laser beam (i.e., initiating radiation) at a fuel, such as particles (usually droplets) of a suitable fuel material (e.g., tin), or a stream of a suitable gas or vapour, such as Xe gas or Li vapour.
- the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector.
- the radiation collector may be a mirrored normal incidence radiation collector (sometimes referred to as a near normal incidence radiation collector), which receives the radiation and focuses the radiation into a beam.
- the radiation collector may have any other suitable form, such as a grazing incidence collector.
- the radiation source may include an enclosing structure or chamber arranged to provide a vacuum or low pressure environment to support the plasma. Such a radiation system is typically termed a laser produced plasma (LPP) source.
- LPP laser produced plasma
- radiation may be generated by a plasma formed by the use of an electrical discharge - a discharge produced plasma (DPP) source.
- DPP discharge produced plasma
- DPP radiation sources generate radiation, such as extreme ultraviolet radiation (EUV) from a plasma formed by means of a discharge, and in particular may involve high temperature vaporisation of a metal fuel for the generation of radiation by directing an excitation beam such as a laser beam towards the metal fuel.
- Metal typically in molten form, may be supplied to discharge surfaces of plasma-excitation electrodes and vaporized by means of irradiation with an excitation beam such as a laser beam whereby a high temperature plasma may be subsequently excited from the vaporized metal fuel by means of a high voltage discharge across the electrodes.
- the DPP radiation source apparatus may include an enclosing structure or chamber arranged to provide a vacuum or low pressure environment to support the plasma.
- the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector, such as a mirrored normal incidence radiation collector, which may form part of the radiation source apparatus.
- the radiation source apparatus may be referred to as a source collector apparatus.
- vaporization is considered to also include gasification, and the fuel after vaporization may be in the form of a gas (for instance as individual atoms) and/or a vapour (comprising small droplets).
- a gas for instance as individual atoms
- vapour comprising small droplets.
- particles is used herein includes both solid and liquid (i.e., droplet) particles.
- Generation of plasma may result in contamination of the radiation source caused by particulate debris from the fuel.
- liquid tin is used as a fuel source
- some of the liquid tin will be converted into a plasma, but particles of liquid tin may be emitted at high speeds from the plasma formation location.
- Such fuel particles are referred to herein as primary debris particles.
- the liquid fuel particles may solidify on other components within the radiation source, affecting the ability of the radiation source to generate a radiation producing plasma or to provide a beam of radiation from the plasma.
- debris-receiving surfaces may be positioned within the radiation source to deflect or capture such primary debris particles.
- optically-active is merely used to denote surfaces which have an optical role to play, such as mirrors, lenses, viewing ports, sensors and the like, and is not meant to imply any optical activity in terms of the modification of the optical axis of polarised radiation (which is understood to be an alternative meaning of the term “optical activity” in the art).
- composition consisting essentially of a set of components will comprise less than 5% by weight, typically less than 3% by weight, more typically less than 1% by weight of non-specified components.
- a first aspect of the invention provides a radiation source arranged to generate radiation from a plasma generated from a fuel within an enclosure comprising a gas, and the generated plasma resulting in emission of primary debris, the radiation source comprising:
- a debris-receiving surface positioned and/or oriented such that, in use, the emission of primary debris causes contamination of the debris -receiving surface with a fuel layer
- the radiation source according to the first and any further aspect of the invention described herein may be suitable for providing radiation to a processing tool such as a lithographic apparatus.
- the contamination of the debris-receiving surface may arise directly from the emission of primary debris. That is, the primary debris may be incident upon the debris- receiving surface directly, without first being incident upon another surface within the radiation source.
- the contamination of the debris -receiving surface may additionally or alternatively occur as an indirect result of the emission of primary debris. For example, the contamination of the debris-receiving surface may occur as a result of debris scattering, or dripping, onto the debris-receiving surface from another surface within the radiation source.
- the debris-receiving surface may comprise a part of a larger surface.
- debris-receiving surfaces for lithography radiation sources may be maintained at a temperature in excess of the melting point of the fuel, but to avoid unnecessary heating, the temperature may be above the melting point of the fuel by say 20°C or 50 °C or less. This avoids unnecessary heating of debris-receiving surfaces whilst maintaining the temperature sufficient to maintain the fuel in a liquid or molten state whereby the collected primary fuel debris may be run-off the debris-receiving surfaces for consolidation and optional recycling. It had also been assumed that the spitting effect arose from some boiling or nucleation mechanism and so it was assumed that increasing the temperature would lead to an increase in secondary debris particles from the spitting phenomenon as a result of a conventional increase in chemical kinetics as temperature increases.
- the number of secondary debris particles generated per minute for a fixed surface area at 350°C is less than 90% of the number generated by the same surface area at 252°C (i.e., a temperature 20°C higher than the melting point).
- a temperature of 550°C for this arrangement of fuel and gas, the spitting effect has reduced to zero (100% reduction).
- the application of a temperature of about 100°C in excess of the melting point of the fuel, preferably at least 150°C in excess of the melting point of the fuel, more preferably at least 200°C in excess of the melting point of the fuel can be considered to provide a substantial reduction of the spitting effect.
- the debris-receiving surface may comprises a heater, such as an electrical heater, or a heating pipe heated by a heat transfer fluid.
- the radiation source according to the first aspect of the invention may have the debris -receiving surface arranged to be maintained at a temperature in excess of 300°C in use, such as in excess of 350°C, for instance in excess of 400°C, say in excess of 500°C or in excess of 550°C.
- the debris-receiving surface is arranged to be maintained at a temperature less than the fuel boiling point in the presence of the gas, such as less than 1000°C, both to avoid high vapour pressures of fuel in the radiation source enclosure, and to prevent thermally driven corrosion of debris -receiving surfaces.
- the debris-receiving surfaces may be of a steel alloy comprising molybdenum or may be of an alloy consisting essentially of molybdenum.
- the debris-receiving surface is preferably arranged to be maintained at a temperature sufficiently high to prevent formation of bubbles of the gas within the liquid fuel layer in use.
- the debris-receiving surface may be arranged to be maintained at a temperature of 550°C or more in use.
- Such an arrangement would be effective for preventing spitting for tin fuel layers in a hydrogen gas at a pressure of 50Pa or more, such as up to 500Pa, for instance from 100 to 150 Pa.
- the radiation source may for instance be a DPP radiation source, or may be an
- the radiation source may comprise a fuel droplet generator typical of an LPP source in combination with a grazing incidence collector and/or a foil trap for primary debris collection, the latter being typical of a DPP source.
- the radiation source may be arranged to receive an excitation beam such that, in use, the excitation beam is incident on the fuel at a plasma formation location to generate the plasma, and the debris- receiving surface and optically-active component may be mutually positioned and/or oriented such that substantially all lines normal to the debris-receiving surface do not intersect the optically-active surface of the component.
- the radiation source may comprise a shroud for shielding the fuel whilst the fuel travels to the plasma formation location and the debris-receiving surface comprises at least a part of a surface of the shroud.
- the radiation source may comprise, as a component having an optic ally- active surface, a radiation collector arranged to collect radiation emitted by the plasma at the plasma formation location and to form a beam of radiation therefrom.
- the radiation source according to any preceding claim may comprise a contaminant trap arranged to reduce propagation of debris generated by the plasma (i.e., primary debris) and the debris-receiving surface may comprises at least a part of a surface of the contaminant trap.
- the component having an optically-active surface may comprise a sensor.
- the component may comprise a sensor for detecting and/ or analysing a characteristic parameter of the excitation beam or the radiation.
- the sensor may be for detecting an alignment between the excitation beam and a fuel at the plasma formation location.
- the component having an optically-active surface may comprise a viewport and the optically- active surface of the component may comprise a window of the viewport.
- the viewport may comprise a window into a part of the radiation source, to assist diagnosis of problems with the radiation source.
- the radiation source may comprise a contaminant trap arranged to reduce propagation of debris generated by the plasma.
- the debris-receiving surface may comprises at least a part of a surface of the contaminant trap.
- the contaminant trap may comprise a plurality of vanes and the at least a part of the debris-receiving surface may comprise at least part of one of the plurality of vanes.
- the contaminant trap may comprise, for example, a rotating foil trap or a static trap.
- the radiation source may further comprise a nozzle configured to direct a stream of fuel droplets along a trajectory towards the plasma formation location.
- the debris- receiving surface may comprises at least a part of a surface of the nozzle.
- the radiation source may comprise first and second debris -receiving surfaces, positioned and/or oriented such that, in use, the emission of primary debris causes contamination of the debris-receiving surfaces with respective fuel layers, the first debris-receiving surface being the debris -receiving surface of the first aspect of the invention, wherein:
- the second debris -receiving surface is arranged to be maintained at a temperature sufficiently high to maintain its respective fuel layer as liquid, and
- the second debris -receiving surface and component comprising an optically-active surface are mutually positioned and/or oriented such that substantially all lines normal to the second debris-receiving surface do not intersect the optically-active surface of the component.
- the second debris-receiving surface is a surface which may be difficult, or inconvenient, to heat, or difficult, or inconvenient, to maintain at an elevated temperature in use, such as a rotating trap, then the reduction of contamination of optically-active surfaces by secondary debris may be achieved by this arrangement, without having to heat the second debris-receiving surface to the temperature required to reduce or eliminate spitting.
- the radiation source suitable for providing radiation to a lithographic apparatus may be a radiation source being arranged to receive an excitation beam such that, in use, the excitation beam is incident on a fuel at a plasma formation location resulting in emission of primary debris, the radiation source comprising:
- a debris receiving surface positioned and/ or oriented such that, in use, the emission of primary debris causes contamination of the debris receiving surface; and a component having an optically active surface;
- the debris receiving surface and component are positioned and/or oriented such that substantially all lines normal to the debris receiving surface do not intersect the optically active surface of the component.
- the debris-receiving surface is not necessarily arranged to be maintained at a temperature sufficiently high to provide a rate of formation of bubbles of the gas within the liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of the gas within the liquid fuel layer at a temperature 20°C in excess of the melting point of the fuel.
- the positioning or orientation of the debris receiving surface and component having an optically active surface are positioned and/or oriented such that substantially all lines normal to the debris receiving surface do not intersect the optically active surface of the component.
- the radiation source comprises a shroud for shielding the fuel while the fuel travels to the plasma formation location; and the debris receiving surface may comprises at least a part of a surface of the shroud.
- the component having an optically active surface may comprises a radiation collector arranged to collect radiation emitted by a plasma at the plasma formation location and form a beam of radiation therefrom.
- the component may comprise a sensor.
- the component may comprise a viewport and the optically active surface of the component may comprise a window of the viewport.
- the radiation source may comprise a contaminant trap arranged to reduce propagation of debris generated by a plasma; and the debris receiving surface may comprise at least a part of a surface of the contaminant trap.
- the contaminant trap may comprise a plurality of vanes and the debris receiving surface may comprise at least part of one of the plurality of vanes.
- the radiation source may further comprise a gas barrier, in particular the gas barrier may comprise a hydrogen gas barrier.
- the radiation source of this arrangement may further comprise a nozzle configured to direct a stream of fuel droplets along a trajectory towards a plasma formation location with the debris receiving surface comprising at least a part of a surface of the nozzle.
- a second aspect of the invention provides a method of generating radiation for example for a lithography apparatus, the method comprising generating a plasma from a fuel in an enclosure of a radiation source according to the first aspect of the invention, the enclosure comprising a gas, wherein the radiation is emitted from the plasma, wherein, in use, the debris-receiving surface is maintained at a temperature sufficiently high to maintain the fuel layer as a liquid and to provide a rate of formation of bubbles of the gas within the liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of the gas within the liquid fuel layer at a temperature 20°C in excess of the melting point of the fuel.
- the gas preferably comprises or consists essentially of hydrogen.
- the gas may typically be present at a partial pressure from 50 to 500 Pa, such as from 80 to 200 Pa, for instance from 100 to 150 Pa.
- hydrogen gas it is usual for hydrogen gas to be present within the enclosure of a radiation source for generation of radiation for lithography, such as an LPP source, whereby the radiation-generating plasma interacts with the gas to form hydrogen free-radicals, which are useful for maintaining clean, optically-active surfaces for optical components within the radiation source.
- gas such as hydrogen gas, may be used to provide a gas flow or gas barrier or gas curtain used to divert primary debris away from optically-active surfaces of the radiation source.
- a gas flow or gas barrier/curtain leads to presence of the gas within the enclosure of the radiation source.
- the gas pressure is maintained at 500Pa or less such as 200 Pa or less, or 150 Pa or less, in order to avoid excessive absorption of generated radiation, such as EUV radiation, by the gas when the radiation source is in use.
- the debris -receiving surface may be maintained at a temperature of 300°C or more in use, such as in excess of 350°C, for instance in excess of 400°C, say in excess of 550°C or in excess of 700 °C.
- a temperature of about 100°C in excess of the melting point of the fuel preferably at least 150°C in excess of the melting point of the fuel, more preferably at least 200°C in excess of the melting point of the fuel can be considered to provide a substantial reduction of the spitting effect.
- the debris-receiving surface may be maintained at a temperature sufficiently high to prevent formation of bubbles of the gas within the liquid fuel layer in use.
- the debris-receiving surface may be maintained at a temperature of 550°C or more in use, such as 700°C or more.
- Such a method would, for instance, be effective for preventing spitting for tin fuel layers in a hydrogen gas at a pressure of 50Pa or more, such as up to 500Pa, for instance from 100 to 150 Pa.
- the generation of bubbles in a liquid fuel layer may also be mitigated by ensuring that the surface that is covered by the liquid fuel layer is sufficiently smooth.
- the debris-receiving surfaces as applied have received a polishing or micro polishing treatment.
- Yet another way of mitigating the spitting effect is to provide a carbon layer on top of the liquid fuel layer.
- the application of such a carbon layer has been found to prevent, to a large extend, the spitting effect.
- the radiation generated from the plasma comprises EUV radiation, more preferably consisting essentially of EUV radiation (such as 95% of the radiation power).
- the fuel is suitably a metal fuel such as tin, which is highly effective for generation of EUV radiation when excited into a plasma state.
- a third aspect of the invention provides an apparatus arranged to project a conditioned radiation beam (such as a radiation beam patterned by a patterning device) onto a substrate, wherein the lithographic apparatus comprises a radiation source according to the first aspect of the invention.
- a conditioned radiation beam such as a radiation beam patterned by a patterning device
- the apparatus of the third aspect of the invention may further comprise:
- an illumination system configured to condition the radiation generated by the radiation source to form a conditioned radiation beam
- a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam;
- a substrate table constructed to hold a substrate
- a projection system configured to project the patterned radiation beam onto a target portion of the substrate.
- the apparatus may comprise a further debris -receiving surface, for instance within the illumination system, positioned and/or oriented such that, in use, the emission of primary debris causes contamination of the debris-receiving surface with a fuel layer, wherein the debris-receiving surface is arranged to be maintained at a temperature sufficiently high to maintain said fuel layer as a liquid and to provide a rate of formation of bubbles of said gas within said liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of said gas within said liquid fuel layer at a temperature 20°C in excess of the melting point of said fuel.
- a fourth aspect of the invention provides a device manufacturing method comprising generating radiation using the apparatus of the third aspect of the invention.
- the method of the fourth aspect of the invention may further comprise: generating a beam of EUV radiation using the radiation source;
- Figure 1 schematically depicts a lithographic apparatus according to an embodiment of the invention
- Figure 2 is a more detailed view of the apparatus of Figure 1 , including an LLP radiation source according to an embodiment of the invention
- Figure 3 schematically depicts part of a radiation source according to an embodiment of the present invention
- Figure 4 schematically depicts a part of the radiation source of Figure 3;
- Figure 5 schematically depicts the part of the radiation source of Figure 4 according to an alternative embodiment
- Figure 6 schematically depicts a part of the radiation source of Figure 3 in more detail.
- Figure 7 schematically depicts the part of the radiation source of Figure 6 according to an alternative embodiment.
- FIG. 1 schematically depicts a lithographic apparatus LAP including radiation source SO according to an embodiment of the invention.
- the apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation); a support structure (e.g., a mask table) MT constructed to support a patterning device (e.g., a mask or a reticle) MA and connected to a first positioner PM configured to accurately position the patterning device; a substrate table (e.g., a wafer table) WT constructed to hold a substrate (e.g., a resist-coated wafer) W and connected to a second positioner PW configured to accurately position the substrate; and a projection system (e.g., a reflective projection system) PS configured to project a pattern imparted to the radiation beam B by patterning device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.
- the illumination system may include various types of optical components (
- the support structure MT holds the patterning device MA in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment.
- the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device.
- the support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system.
- patterning device should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate.
- the pattern imparted to the radiation beam may correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
- the patterning device may be transmissive or reflective.
- Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels.
- Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
- An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
- the projection system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of a vacuum. It may be desired to use a vacuum or at least a low gas pressure environment for EUV radiation since gases may absorb too much radiation. A vacuum or low gas pressure environment may therefore be provided to the whole beam path with the aid of a vacuum wall and vacuum pumps. [0077] As here depicted, the apparatus is of a reflective type (e.g., employing a reflective mask).
- the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such "multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
- the illuminator IL receives an extreme ultra violet radiation
- EUV EUV
- Methods to produce EUV radiation include, but are not necessarily limited to, converting a material into a plasma state that has at least one element, e.g., xenon, lithium or tin, with one or more emission lines in the EUV range.
- LPP laser produced plasma
- the required plasma can be produced by irradiating a fuel, such as a droplet, stream, cluster or jet of material having the required EUV line-emitting element, with a laser beam such as an infra-red laser beam.
- the radiation source SO may be part of an EUV radiation system including a fuel stream generator for generating a stream of fuel and/or a laser (neither of which are shown in Figure 1), for providing the laser beam for exciting the fuel.
- the resulting plasma emits output radiation, e.g., EUV radiation, which is collected using a radiation collector, disposed within an enclosure of the radiation source.
- the laser and/or fuel stream generator and the collector module may be separate entities from the radiation source, or the radiation source may comprise these integers.
- a C0 2 IR-laser when used to provide the laser beam for fuel excitation, this may be considered as separate from the rest of the radiation source, with the radiation source arranged to accept a laser beam from the IR-laser.
- the laser is not considered to form part of the lithographic apparatus and the radiation beam is passed from the laser to the radiation source with the aid of a beam delivery system comprising, for example, suitable directing mirrors and/or a beam expander.
- the excitation beam source may be an integral part of the radiation source, for example when the source is a discharge produced plasma EUV generator, often termed as a DPP source.
- the illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted.
- the illuminator IL may comprise various other components, such as facetted field and pupil mirror devices. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
- the radiation beam B is incident on the patterning device (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning device. After being reflected from the patterning device (e.g., mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
- the substrate table WT can be moved accurately, e.g., so as to position different target portions C in the path of the radiation beam B.
- the first positioner PM and another position sensor PS1 can be used to accurately position the patterning device (e.g., mask) MA with respect to the path of the radiation beam B.
- Patterning device (e.g., mask) MA and substrate W may be aligned using mask alignment marks Ml, M2 and substrate alignment marks PI, P2.
- Figure 2 shows the lithographic apparatus LAP in more detail, including the radiation source SO, the illumination system IL, and the projection system PS.
- the radiation source SO is constructed and arranged such that a vacuum or low gas pressure environment can be maintained in an enclosing structure 2 of the radiation source.
- a laser 4 is arranged to deposit laser energy via a laser beam 6 into a fuel, such as tin (Sn) or lithium (Li) which is provided from a fuel stream generator 8. Liquid (i.e., molten) tin, or another metal in liquid form, is preferred.
- a fuel trap 9 is arranged to receive fuel not spent during plasma creation.
- the deposition of laser energy into the fuel creates a highly ionized plasma 10 at a plasma formation location 12 which has electron temperatures of several tens of electron volts (eV).
- the energetic radiation generated during de-excitation and recombination of these ions is emitted from the plasma 10, collected and focused by a near normal incidence radiation collector 14 (sometimes referred to more generally as a normal incidence radiation collector).
- the collector 14 may have a multilayer structure, for example one tuned to reflect, more readily reflect, or preferentially reflect, radiation of a specific wavelength (e.g., radiation of a specific EUV wavelength).
- the collector 14 may have an elliptical configuration, having two natural ellipse focus points. One focus point will be at the plasma formation location 10, and the other focus point will be at the intermediate focus, discussed below.
- a laser 4 and/or radiation source and/or a collector 14 may together be considered to comprise a radiation source, specifically an EUV radiation source.
- the EUV radiation source may be referred to as a laser produced plasma (LPP) radiation source.
- the collector 14 in the enclosing structure 2 may form a collector module, which forms a part of the radiation source (in this example).
- a second laser (not shown) may be provided, the second laser being configured to preheat the fuel before the laser beam 6 is incident upon it.
- An LPP source which uses this approach may be referred to as a dual laser pulsing (DLP) source.
- DLP dual laser pulsing
- Such a second laser may be described as providing a pre-pulse into a fuel target, for example to change a property of that target in order to provide a modified target.
- the change in property may be, for example, a change in temperature, size, shape or the like, and will generally be caused by heating of the target.
- the fuel stream generator 8 will generally comprise, or be in connection with, a nozzle configured to direct fuel, along a trajectory towards the plasma formation location 12.
- Radiation B that is reflected by the radiation collector 14 is focused at a source image 16.
- the source image 16 is commonly referred to as the intermediate focus, and the radiation source SO is arranged such that the intermediate focus 16 is located at or near to an opening 18 in the enclosing structure 2.
- the source image 16 is an image of the radiation emitting plasma 10.
- the radiation B traverses the illumination system IL, which may include a facetted field mirror device 20 and a facetted pupil mirror device 22 arranged to provide a desired angular distribution of the radiation beam B at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
- the illumination system IL may include a facetted field mirror device 20 and a facetted pupil mirror device 22 arranged to provide a desired angular distribution of the radiation beam B at the patterning device MA, as well as a desired uniformity of radiation intensity at the patterning device MA.
- More elements than shown may generally be present in the illumination system IL and projection system PS. Furthermore, there may be more mirrors present than those shown in the figures. For example there may be 1-6 (or more) additional reflective elements present in the projection system PS than shown in Figure 2.
- fuel is provided in the form of a liquid fuel, such as liquid tin.
- FIG. 3 illustrates parts of the radiation source SO in an embodiment of the invention.
- a contaminant trap is provided to give one or more debris-receiving surfaces.
- the contaminant trap in some embodiments, takes the form of a plurality vanes around the outside of the housing of the radiation source SO.
- Two vanes 33a, 33b are visible in Figure 3.
- the vanes 33a, 33b are arranged to capture and to direct primary debris emitted by the plasma to one or more debris collection traps (not shown).
- the vanes 33a, 33b are, in some embodiments of the invention, combined with other debris mitigation devices, for example a gas barrier.
- a gas barrier comprises a low background pressure of a suitable gas, e.g., argon, hydrogen or helium, and/or a stream of gas across the path of the radiation.
- a gas barrier in an embodiment of the invention may only be used only to provide mechanical suppression of debris, but is preferably a gas which generates free- radicals such as hydrogen free radicals for use in chemical scavenging of surfaces within the radiation source.
- the contaminant trap may comprise one or more rotating foil traps.
- a rotating foil trap comprises a plurality of spaced-apart foils, driven to rotate around an axle aligned with the optical axis 34 of the radiation source SO. The speed of rotation of the rotating foil trap is determined so that primary debris particles emitted from the plasma are swept up by the foils; there is insufficient time for a debris particle to pass between the foils before that gap is swept by the rotating foils.
- Electromagnetic radiation is substantially unaffected by the rotating foil trap as the trap presents a very small area viewed from the radiation source point at the plasma formation location.
- the contaminant trap is, in some embodiments of the invention, combined with other debris mitigation devices, for example a gas barrier.
- a gas barrier comprises a low background pressure of a suitable gas, e.g., argon, hydrogen or helium, and/or a stream of gas across the path of the radiation.
- a gas barrier in an embodiment of the invention is used only to provide mechanical suppression of debris. Therefore, a wide choice of suitable gasses is available.
- a rotating foil trap can be combined, or replaced, with a stationary foil trap.
- a shroud 32 is positioned between the fuel stream generator 8 and the plasma formation location 12, such that the fuel droplets 31 exiting the nozzle 30, travel through the shroud 32, exiting the shroud 32 a short distance before the plasma formation location 12.
- the shroud 32 acts to protect the fuel droplets 31 from interference.
- the shroud 32 acts to protect the fuel droplets 31 from interactions with primary debris generated during plasma formation.
- An optical element 35 is positioned before (with respect to the direction of propagation of the laser beam 6) the collector 14, to focus the laser beam 6 at the plasma formation location 12. In Figure 3, the optical element 35 is shown as a lens, although it will be appreciated that the optical element 35 may be any optical element suitable for focusing the laser beam 6 toward the plasma formation location 12.
- the radiation source SO comprises one or more sensors (not shown) to determine a relative alignment between a focus of the laser beam 6 and the fuel droplet.
- the ability to have some indication of the relative alignment between the fuel and the focus of the laser beam 6 directed at the fuel may be beneficial due to the fact that it may be desirable to control the radiation source SO such that the radiation output from the radiation source has a desired distribution.
- the focus position of the radiation directed at the fuel and the position of the fuel may be affected by system dynamics of the lithographic apparatus, such as the movement of parts of the lithographic apparatus.
- the ability to have an indication of the relative alignment between the fuel and the focus of the radiation directed at the fuel means that any misalignment between the fuel and the focus of the radiation directed at the fuel may be able to be corrected.
- Additional sensors may be provided within the lithographic apparatus for a plurality of purposes.
- the radiation source SO may be provided with one or more viewports (not shown) to allow a user of the radiation source SO/ lithography apparatus to more easily view and diagnose problems with the apparatus.
- Liquid tin debris may solidify upon the surfaces upon which it is incident, thereby creating additional problems within the radiation source SO.
- tin contamination of the collector 14 may reduce the efficiency with which the collector 14 can collect and focus radiation produced by the plasma.
- contamination of the optical element 35 may affect the ability of the optical element 35 to focus the laser beam 6 at the plasma formation location 12.
- cooling of liquid metal fuels such as tin has been shown to form stalagmite and stalactite-like structures on surfaces within the radiation source module. Such structures may impede the emission of EUV radiation from the radiation source SO, or interfere with the provision of liquid fuel to the plasma formation location 12.
- components with optically-active surfaces may include, for example, the collector 14, the optical element 35, sensors within the radiation source SO and lithography apparatus, and viewports. It will be appreciated that the present invention is not limited in applicability to the components provided as examples above. Indeed, in the context of the present discussion, components with optically-active surfaces may include any surfaces of the radiation source SO and lithography apparatus for which interaction with tin debris may result, either directly or indirectly, in a reduction of an amount of EUV radiation provided to a target (i.e., a wafer). For example, indirect reductions may result from an inability to properly maintain the radiation source SO or lithography apparatus as a result of viewports becoming unusable due to fuel debris deposition or corrosion.
- some surfaces within the radiation source SO may be maintained at a temperature above the melting point of the fuel material.
- selected surfaces within the radiation source SO may be kept at a temperature of or above 232° C to prevent the incident debris from solidifying.
- the surfaces of the shroud 32, and the vanes 33a, 33b may be kept at a temperature of or above 232° C. In this way, rather than solidifying on the surfaces of the shroud 32 and the vanes 33a, 33b, it is intended that liquid tin debris will run off those surfaces into one or more debris collectors (not shown).
- one or more of such debris -receiving surfaces may be arranged to be maintained at a temperature sufficiently high to maintain the fuel layer as a liquid and to provide a rate of formation of bubbles of gas within the liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of gas within the liquid fuel layer at a temperature 20°C in excess of the melting point of the fuel.
- gas barriers may be employed to prevent debris from travelling into other parts of the lithographic apparatus.
- hydrogen is used to provide a gas barrier. It has been realised that in the presence of gas barriers, such as hydrogen gas barriers, bubbles may form within surfaces of liquid tin within the radiation source SO. The increased pressure caused by the bubbles in the surfaces of liquid tin result in the ejection of particulate debris from those surfaces, in a phenomenon referred to as spitting. The ejection is generally substantially perpendicular to the surface of the tin.
- Such spitting has been observed to take place within both relatively thin layers of tin (e.g., with a thickness of around 10 ⁇ ) and within deeper layers of liquid tin (e.g., with a thickness of around 3 mm depths).
- the particles of tin produced by the above described effect may have diameters of 100 ⁇ (but may be smaller or larger) and have speeds of around 3 m/s (but may be faster or slower).
- the spitting phenomenon may be reduced or even eliminated by the expedient heating of the debris-receiving surfaces to a sufficient temperature in use, as set out hereinabove.
- Ejection of tin debris directly from the plasma may be thought of as primary debris, while ejection of tin debris by spitting from debris -receiving surfaces contaminated by fuel layers, formed as a result of the primary debris (primary contamination), may be thought of as secondary debris.
- primary contamination debris contaminated by the secondary debris
- secondary contamination debris incident on a first surface may drip or scatter onto a second surface leading to bubbles forming in, and debris being ejected from, the tin now coating the second surface.
- FIG 4 schematically illustrates a part of the arrangement of Figure 3 viewed in a direction perpendicular to the optical axis 34, through the shroud 32.
- surfaces 32a, 32b of the shroud 32 has been coated with layers 36a, 36b of liquid tin as a result of primary debris from the plasma (not shown).
- the shroud 32 is maintained at a temperature above the melting point of tin.
- the layers of tin 36a, 36b remain liquid, and gas bubbles may therefore formed within the layers of tin 36a, 36b.
- Such bubbles formed within the liquid tin would result in subsequent ejection of secondary debris in a direction substantially perpendicular to the surfaces 32a, 32b.
- the secondary debris would be ejected towards the collector 14, resulting in secondary contamination 36a', 36b' of the collector 14.
- this secondary debris arising from spitting may be reduced or eliminated by sufficient heating of the shroud 32, for instance with a heater (not shown).
- FIG. 5 illustrates an alternative embodiment of the present invention, which is a modification of the embodiment illustrated in Figure 3.
- the shroud 32 has been positioned within the radiation source SO such that normal lines from the surfaces 32a, 32b do not intersect the surface of the collector 14.
- secondary debris ejected in a direction perpendicular to the surfaces 32a, 32b i.e., along paths defined by normal lines from the surfaces 32a, 32b
- the collector 14 is maintained free from contamination by secondary debris.
- the shape of the shroud 32 may be altered to remove or minimize any intersection between normal lines extending from the surfaces of the shroud 32 and the collector 14.
- the shroud 32 is shown as a hollow triangular prism in Figures 4 and 5, the shroud 32 may take any appropriate shape. This may be combined with heating the shroud 32 to a temperature sufficient to lead to a substantial reduction in secondary debris arising from spitting.
- FIG. 6 schematically illustrates a part of the embodiment of Figure 3 (from the same perspective as Figure 3) in further detail.
- the reflector 14 and the vane 33b are illustrated.
- a portion of the vane 33b has been coated in a layer 37 of liquid tin as a result of primary debris. Normal lines extending from the surface of the vane 33b coated in the layer 37 intersect the collector 14, such that secondary debris emitted by the layer 37 are incident on the collector 14, coating the collector 14 in a layer 38 of tin.
- the secondary debris arising from tin spitting may be reduced (say at 350°C) or eliminated (say at 550°C) by sufficient heating of the vane 33b as set out hereinabove.
- the application of a temperature of about 100°C in excess of the melting point of the fuel, preferably at least 150°C in excess of the melting point of the fuel, more preferably at least 200°C in excess of the melting point of the fuel can be considered to provide a substantial reduction of the spitting effect.
- the generation of bubbles in a liquid fuel layer may also be mitigated by ensuring that the surface that is covered by the liquid fuel layer is sufficiently smooth.
- the debris-receiving surfaces as applied have received a polishing or micro polishing treatment.
- FIG. 7 illustrates an alternative embodiment of the invention which is a modification of the arrangement of Figure 6.
- the vane 33b has positioned such that normal lines from the surface of the vane 33b coated in the layer 37 no longer intersect the collector 14. As such, secondary debris ejected from the layer 37 is not incident upon the collector 14, thereby preventing contamination of the collector 14.
- Figures 5 and 7 may be combined to provide a radiation source in which the surfaces of the shroud 32 and the surfaces of the vanes 33 are arranged to reduce the effect of secondary debris on the collector 14.
- the orientation and position of other surfaces which are subject to primary contamination may be configured so as to reduce or eliminate the intersection of normal lines from those surfaces with other sensitive components of the radiation source SO or such surfaces may be heated to a sufficient temperature in order to provide substantial reduction in, or elimination of, the fuel spitting phenomenon.
- the effect of secondary debris can be minimized, leading to improved performance, reduced maintenance requirements and a longer useful lifetime of the radiation source SO.
- the orientation and position of some surfaces which are subject to secondary (and tertiary) contamination may be selected so as to reduce or eliminate intersection of normal lines from those surfaces with any optically active surfaces of components of the radiation source SO.
- the composition of the fuel may be selected for lower temperature operation, in which case the fuel may be, for example, a eutectic alloy such as an alloy of tin and gallium, or an alloy of tin and indium.
- the invention is also applicable for use in the protection of optically-active surfaces within other portions of a lithography apparatus in addition to within the radiation source itself, for instance within the illuminator.
- lithographic apparatus in the manufacture of ICs
- the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, LEDs, solar cells, etc.
- LCDs liquid-crystal displays
- any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
- the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multilayer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
- Embodiments of the invention may form part of processing tool such as a lithographic apparatus, a mask inspection apparatus, a metrology apparatus, or any apparatus that measures or processes an object such as a wafer (or other substrate) or mask (or other patterning device). These apparatus may be generally referred to as lithographic tools. Such a lithographic tool may use vacuum conditions or ambient (non- vacuum) conditions. While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. The descriptions above are intended to be illustrative, not limiting. Thus it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the clauses and claims that follow.
- a radiation source to provide radiation to a lithographic apparatus the radiation source being configured to generate radiation from a plasma generated from a fuel within an enclosure comprising a gas, and the generated plasma resulting in emission of primary debris, the radiation source comprising:
- a component having an optically-active surface, and a debris-receiving surface having a fuel layer and configured to receive primary debris
- the debris-receiving surface is maintained at a temperature sufficiently high to maintain the fuel layer as a liquid and to provide a rate of formation of bubbles of the gas within said liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of the gas within said liquid fuel layer at a temperature 20°C in excess of the melting point of the fuel.
- the radiation source of clause 1 wherein the debris-receiving surface comprises a heater.
- the radiation source of clause 1, wherein the debris-receiving surface is arranged to be maintained at a temperature in excess of 300°C in use.
- the radiation source of clause 1, wherein the debris-receiving surface is arranged to be maintained at a temperature sufficiently high to prevent formation of bubbles of said gas within said liquid fuel layer in use.
- the radiation source of clause 1, wherein the debris-receiving surface is arranged to be maintained at a temperature of 550°C or more in use.
- the radiation source of clause 1, wherein the radiation source is configured to receive an excitation beam such that, in use, the excitation beam is incident on the fuel at a plasma formation location to generate said plasma, and
- the radiation source comprises a shroud for shielding the fuel that travels to the plasma formation location
- the debris-receiving surface comprises at least a part of a surface of the shroud.
- the component comprises, as an optically-active component, a radiation collector arranged to collect radiation emitted by said plasma at the plasma formation location and to form a beam of radiation therefrom.
- the radiation source comprises a contaminant trap arranged to reduce propagation of debris generated by said plasma;
- the debris-receiving surface comprises at least a part of a surface of the contaminant trap.
- the radiation source of clause 1 further comprising a second debris-receiving surface, configured to receive the emission of primary debris and wherein:
- the second debris -receiving surface is arranged to be maintained at a temperature sufficiently high to maintain its respective fuel layer as liquid, and
- a radiation source suitable for providing radiation to a lithographic apparatus the radiation source being arranged to receive an excitation beam such that, in use, the excitation beam is incident on a fuel at a plasma formation location resulting in emission of primary debris, the radiation source comprising:
- a debris receiving surface configured to receive the emission of primary debris
- the debris receiving surface and component are arranged such that substantially all lines normal to the debris receiving surface do not intersect the optically active surface of the component.
- the debris receiving surface comprises at least a part of a surface of the shroud.
- the component comprises a radiation collector arranged to collect radiation emitted by a plasma at the plasma formation location and form a beam of radiation therefrom.
- the radiation source of clause 12, wherein the component comprises a sensor.
- the radiation source of clause 12, wherein the component comprises a viewport and the optically active surface of the component comprises a window of the viewport.
- the radiation source of clause 12, wherein the radiation source comprises a contaminant trap arranged to reduce propagation of debris generated by a plasma; and
- the debris receiving surface comprises at least a part of a surface of the contaminant trap.
- a nozzle configured to direct a stream of fuel droplets along a trajectory towards a plasma formation location
- a method of generating radiation for a lithography apparatus comprising: providing an excitation beam to a plasma formation location within a radiation source of any of clauses 1 to 21; and
- providing a fuel at the plasma formation location comprises directing the fuel along a shroud.
- providing a fuel at the plasma formation location comprises directing the fuel along a shroud.
- radiation generated from the radiation emitting plasma is collected by a radiation collector arranged to direct the radiation to an intermediate focus.
- the radiation generated from the radiation emitting plasma is EUV radiation.
- a method of generating radiation for a lithography apparatus comprising generating a plasma from a fuel in an enclosure of a radiation source according to clause 1, the enclosure comprising a gas, wherein the radiation is emitted from the plasma, wherein, in use, the debris-receiving surface is maintained at a temperature sufficiently high to maintain the fuel layer as a liquid and to provide a rate of formation of bubbles of the gas within the liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of the gas within the liquid fuel layer at a temperature 20°C in excess of the melting point of the fuel.
- the fuel is tin.
- the gas comprises or consists essentially of hydrogen.
- a method according to clause 26, wherein the radiation generated from the plasma comprises EUV radiation.
- an illumination system configured to condition the radiation generated by the radiation source to form a conditioned radiation beam
- a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam;
- a substrate table constructed to hold a substrate
- a projection system configured to project the patterned radiation beam onto a target portion of the substrate.
- the lithographic apparatus comprises a further debris-receiving surface positioned and/or oriented such that, in use, the emission of primary debris causes contamination of the debris -receiving surface with a fuel layer, wherein the debris-receiving surface is arranged to be maintained at a temperature sufficiently high to maintain said fuel layer as a liquid and to provide a rate of formation of bubbles of said gas within said liquid fuel layer in use which is substantially lower than the rate of formation of bubbles of said gas within said liquid fuel layer at a temperature 20°C in excess of the melting point of said fuel.
- a device manufacturing method comprising generating radiation using the lithographic apparatus of clause 33.
Abstract
Description
Claims
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JP2015542197A JP6480339B2 (en) | 2012-11-15 | 2013-10-23 | Radiation source and method for lithography |
CN201380059635.2A CN104798445B (en) | 2012-11-15 | 2013-10-23 | Radiation source and method for photoetching |
US14/442,415 US10095119B2 (en) | 2012-11-15 | 2013-10-23 | Radiation source and method for lithography |
KR1020157015750A KR102122484B1 (en) | 2012-11-15 | 2013-10-23 | Radiation source and method for lithography |
KR1020207016051A KR102281775B1 (en) | 2012-11-15 | 2013-10-23 | Radiation source and method for lithography |
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US201261726843P | 2012-11-15 | 2012-11-15 | |
US61/726,843 | 2012-11-15 | ||
US201261738700P | 2012-12-18 | 2012-12-18 | |
US61/738,700 | 2012-12-18 |
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US (1) | US10095119B2 (en) |
JP (2) | JP6480339B2 (en) |
KR (2) | KR102281775B1 (en) |
CN (2) | CN108828903A (en) |
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WO (1) | WO2014075881A1 (en) |
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2013
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- 2013-10-23 CN CN201810663802.9A patent/CN108828903A/en active Pending
- 2013-10-23 US US14/442,415 patent/US10095119B2/en active Active
- 2013-10-23 CN CN201380059635.2A patent/CN104798445B/en active Active
- 2013-10-23 KR KR1020207016051A patent/KR102281775B1/en active IP Right Grant
- 2013-10-23 JP JP2015542197A patent/JP6480339B2/en active Active
- 2013-10-23 KR KR1020157015750A patent/KR102122484B1/en active IP Right Grant
- 2013-10-23 NL NL2011663A patent/NL2011663A/en not_active Application Discontinuation
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US20100213395A1 (en) * | 2008-12-26 | 2010-08-26 | Yoshifumi Ueno | Extreme ultraviolet light source apparatus |
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WO2018019494A1 (en) * | 2016-07-25 | 2018-02-01 | Asml Netherlands B.V. | Debris mitigation system, radiation source and lithographic apparatus |
US10990015B2 (en) | 2016-07-25 | 2021-04-27 | Asml Netherlands B.V. | Debris mitigation system, radiation source and lithographic apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP2018194860A (en) | 2018-12-06 |
JP6687691B2 (en) | 2020-04-28 |
KR102122484B1 (en) | 2020-06-15 |
TWI609246B (en) | 2017-12-21 |
JP2016502737A (en) | 2016-01-28 |
KR20200068753A (en) | 2020-06-15 |
CN104798445B (en) | 2018-07-20 |
CN108828903A (en) | 2018-11-16 |
US10095119B2 (en) | 2018-10-09 |
KR20150085033A (en) | 2015-07-22 |
NL2011663A (en) | 2014-05-19 |
JP6480339B2 (en) | 2019-03-06 |
TW201418902A (en) | 2014-05-16 |
US20160274467A1 (en) | 2016-09-22 |
CN104798445A (en) | 2015-07-22 |
KR102281775B1 (en) | 2021-07-27 |
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