WO2014046081A1 - Substrate processing device and manufacturing method for semiconductor device - Google Patents

Substrate processing device and manufacturing method for semiconductor device Download PDF

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Publication number
WO2014046081A1
WO2014046081A1 PCT/JP2013/075015 JP2013075015W WO2014046081A1 WO 2014046081 A1 WO2014046081 A1 WO 2014046081A1 JP 2013075015 W JP2013075015 W JP 2013075015W WO 2014046081 A1 WO2014046081 A1 WO 2014046081A1
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WIPO (PCT)
Prior art keywords
substrate
lamp
processing
chamber
mounting table
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PCT/JP2013/075015
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French (fr)
Japanese (ja)
Inventor
賢次 篠崎
嶋田　敏也
油谷　幸則
野内　英博
富大 天野
正浩 三宅
真 檜山
芦原　洋司
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株式会社日立国際電気
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Publication of WO2014046081A1 publication Critical patent/WO2014046081A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Definitions

  • the present invention relates to a substrate processing apparatus for heating and processing a substrate and a method for manufacturing a semiconductor device.
  • a semiconductor substrate When manufacturing a semiconductor device, various processes are performed by exposing a gas to a semiconductor substrate (wafer) or the like heated to a desired temperature.
  • a substrate processing apparatus for heating and processing a substrate for example, an apparatus as disclosed in Patent Document 1 is known.
  • An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the temperature rise / fall rate of the substrate and the uniformity of processing when the substrate is heated and processed. To do.
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing
  • a first process comprising a first substrate mounting table disposed in a room and provided with a first substrate holding pin, and a first lamp for irradiating an electromagnetic wave to the substrate mounted on the first substrate mounting table.
  • a second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the processing chamber and provided with a second substrate holding pin, and the second substrate
  • a second processing unit having a second lamp for irradiating the substrate placed on the mounting table with electromagnetic waves; and a second substrate for transporting the substrate between the first processing unit and the second processing unit.
  • a first substrate is supported by a conveying member and the first substrate holding pin, and a second substrate is the second substrate.
  • a control unit for controlling to start the second ramp and said first ramp while being supported by the second substrate transport member in table above, a substrate processing apparatus having a provided.
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, And a first substrate mounting table disposed in the processing chamber and provided with a first substrate holding pin, and a first lamp for irradiating the substrate mounted on the first substrate mounting table with an electromagnetic wave.
  • a substrate processing method using a substrate processing apparatus wherein the first substrate transfer member carries a plurality of substrates from the transfer chamber into the process chamber; At least one substrate is placed on the first substrate holding pin, and the other substrate is transferred to the second substrate transport member; and the substrate is placed on the substrate platform.
  • a heating step in which the first lamp and the second lamp heat the substrate; and after the heating step, the at least one substrate is supported by the first substrate holding pin, and the other substrate Provides a substrate processing method including a step of starting the first lamp and the second lamp before the second substrate carrying member is supported by the second substrate transport member above the second substrate mounting table. Is done.
  • the present invention it is possible to improve the temperature rise rate, the temperature fall rate, and the uniformity of processing when heating and processing a substrate.
  • FIGS. 1 and 2 show an outline of a substrate processing apparatus 10 such as a semiconductor manufacturing apparatus according to this embodiment.
  • the substrate processing apparatus 10 includes, for example, a transfer chamber 12, and a load lock chamber 14a, a load lock chamber 14b, and two process chambers 16a and 16b disposed around the transfer chamber 12.
  • an atmospheric transfer chamber (EFEM) for transferring the substrate between a hoop (carrier) such as a cassette and the load lock chamber 14a and the load lock chamber 14b.
  • EFEM atmospheric transfer chamber
  • the atmospheric transfer chamber 20 for example, three hoops (not shown) that can accommodate, for example, 25 substrates 22 at regular intervals in the vertical direction are arranged.
  • an atmospheric robot (not shown) that transfers, for example, five substrates 22 between the atmospheric transfer chamber 20 and the load lock chamber 14 a and the load lock chamber 14 b is disposed.
  • the transfer chamber 12, the load lock chamber 14a, the load lock chamber 14b, the processing chamber 16a, and the processing chamber 16b are configured inside a container (also referred to as an apparatus main body) integrally formed of a material such as aluminum (A5052). .
  • the load lock chamber 14a and the load lock chamber 14b are disposed at positions that are line-symmetric with respect to the axis from the load lock chamber 14a and the load lock chamber 14b toward the processing chamber 16a and the processing chamber 16b. Have the same configuration.
  • the processing chamber 16a and the processing chamber 16b are also arranged at positions that are line-symmetric with respect to the same axis, and have the same configuration.
  • the load lock chamber 14a and the processing chamber 16a will be mainly described.
  • a substrate support (boat) 24 is provided in the load lock chamber 14a.
  • the substrate support (boat) 24 accommodates substrates 22 such as 25 wafers at a predetermined interval in the vertical direction.
  • the substrate support 24 is made of, for example, silicon carbide, and includes an upper plate 26, a lower plate 28, and, for example, three support columns 30 that connect the upper plate 26 and the lower plate 28.
  • the substrate support 24 is configured to move in the vertical direction (move up and down) in the load lock chamber 14a, and to rotate about a rotation axis extending in the vertical direction.
  • a vacuum robot 36 is provided in the transfer chamber 12 as an example of a first substrate transfer member that transfers the substrate 22 between the load lock chamber 14a and the processing chamber 16a.
  • the vacuum robot 36 has an arm 42 provided with a finger pair 40 composed of an upper finger 38a and a lower finger 38b.
  • the upper finger 38a and the lower finger 38b have, for example, the same shape, are spaced apart at a predetermined interval in the vertical direction, extend substantially horizontally from the arm 42 in the same direction, and can simultaneously support the substrate 22 respectively. It has been made possible.
  • the arm 42 is configured to rotate about a rotation axis extending in the vertical direction, and to move in the horizontal direction, so that the two substrates 22 can be conveyed simultaneously.
  • a processing space 50 described later is provided in the processing chamber 16a.
  • a substrate platform 44a as a first substrate platform and a substrate platform 44b as a second substrate platform are provided in the processing space 50.
  • the space between the substrate platform 44a and the substrate platform 44b is partly partitioned in the horizontal direction by the partition member 46, and the first processing unit 43a and the substrate platform 44b having the substrate platform 44a.
  • a second processing unit 43b having the structure is formed.
  • the two substrates 22 carried into the processing chamber 16a via the vacuum robot 36 are placed on the substrate platform 44a and the substrate platform 44b, respectively, and are then heat-treated in parallel in the processing space 50. It is configured to be. Substrate processing steps including heat treatment will be described later.
  • FIG. 3 to 5 show an outline of the processing chamber 16a.
  • the lower side (bottom part and side part) of the processing chamber 16 a is formed by a lower container 47.
  • the lower container 47 constitutes a part of the above-described apparatus main body integrally formed of aluminum or the like.
  • the upper opening of the processing chamber 16 a is closed by a lid 48 provided at the upper part of the lower container 47.
  • a processing space 50 is formed below the lid 48.
  • the lid 48 is opened at positions corresponding to the substrate platform 44a and the substrate platform 44b.
  • the opening is provided with a lamp house as a heating device.
  • the heating device includes a lamp house 52a as a first heating unit and a lamp house 52b as a second heating unit. The structures of the lamp house 52a and the lamp house 52b will be described later.
  • the first gas supply mechanism 51a and the second gas supply mechanism 51b are located at positions corresponding to the substrate mounting portion 44a and the substrate mounting portion 44b in the lid 48 and in the vicinity of the lamp house 52a and the lamp house 52b. Is provided.
  • a downstream end of a gas supply pipe (not shown) is connected to an upstream end (upper end in the drawing) of the gas supply mechanism 51a and the gas supply mechanism 51b.
  • an inert gas such as N 2 gas or rare gas (Ar gas is He gas, etc.
  • a gas supply source for supplying other processing gas
  • a flow rate control device Mass flow controller and open / close valve are provided.
  • the gas supply mechanism 51a and the gas supply mechanism 51b are configured to be able to supply gas into the processing space 50, respectively.
  • the processing space 50 is evacuated to, for example, about 0.1 Pa by a pump (not shown) via a first exhaust port 58, a second exhaust port 60, and a third exhaust port 62, which will be described later. It is configured to be able to.
  • the substrate platform 44a and the substrate platform 44b are independently arranged in the same space in the processing space 50, and are located in the processing space 50 and below the lamp house 52a and the lamp house 52b. Are provided respectively.
  • the upper surfaces of the substrate platform 44a and the substrate platform 44b are formed in a disc shape.
  • a first flange 53a and a second flange 53b are provided on the lower surfaces of the substrate platform 44a and the substrate platform 44b, respectively.
  • a support column 49 erected on the lower container 47 is connected to the lower side of the flange 53a and the flange 53b.
  • the substrate platform 44a and the substrate platform 44b are supported by a support column 49 from below and fixed by a fixing member 52 from the side.
  • a first substrate support surface 55a and a second substrate for supporting the substrate 22 in a horizontal posture are provided on the upper surfaces of the substrate platform 44a and the substrate platform 44b (that is, the surfaces facing the lamp house 52a and the lamp house 52b). Support surfaces 55b are respectively provided. The heights of the substrate support surface 55 a and the substrate support surface 55 b are set lower than the height in the processing space 50.
  • a heater 45 as a resistance heating unit is provided in the substrate platform 44.
  • the substrate platform 44a is provided with a heater 45a as a first resistance heating unit
  • the substrate platform 44b is provided with a heater 45b as a second resistance heating unit.
  • the substrate 22 placed on 55b can be heated.
  • the substrate platform 44a and the substrate platform 44b are each formed of, for example, aluminum (A5052 or A5056). By forming the substrate platform 44a and the substrate platform 44b with a material having high thermal conductivity such as aluminum, heat can be efficiently transferred to the substrate 22.
  • the substrate platform 44a and the substrate platform 44b can also be formed of a nonmetallic heat resistant material such as quartz or alumina. In such a case, metal contamination of the substrate 22 can be avoided.
  • the partition member 46 described above is disposed between the substrate platform 44a and the substrate platform 44b.
  • the partition member 46 is made of, for example, aluminum (A5052 or A5056), quartz, alumina, or the like, and is configured as a prismatic member that is detachably provided to the lower container 47, for example.
  • a first exhaust baffle ring 54a and a second exhaust baffle ring 54b are disposed around the substrate platform 44a and the substrate platform 44b so as to surround the outer peripheries thereof (see FIG. 4).
  • a plurality of holes 56 are provided in the exhaust baffle ring 54a and the exhaust baffle ring 54b in the circumferential direction (see FIG. 5).
  • a first exhaust port 58 is formed below the substrate platform 44a, the substrate platform 44b, the exhaust baffle ring 54a, and the exhaust baffle ring 54b (see FIG. 3).
  • the first exhaust port 58 communicates with the space below the processing space 50 via the second exhaust port 60 provided below the substrate platform 44a and the substrate platform 44b.
  • the space below the processing space 50 is configured to be evacuated by a vacuum pump (not shown) through a third exhaust port 62 provided in the lower container 47.
  • the gas supplied into the processing space 50 from the gas supply mechanism 51a and the gas supply mechanism 51b described above is supplied to the substrate 22 supported by the substrate platform 44a and the substrate platform 44b, and then the exhaust baffle.
  • a second exhaust provided below the substrate platform 44a and the substrate platform 44b is exhausted toward the first exhaust port 58 through a hole 56 provided in the ring 54a and the exhaust baffle ring 54b.
  • a robot arm 64 as an example of a second substrate transport member capable of transporting the substrate 22 is disposed on one end side of the partition member 46.
  • the robot arm 64 conveys one of the two substrates 22 conveyed by the vacuum robot 36 toward the substrate platform 44b and collects it from the substrate platform 44b.
  • the robot arm 64 includes, for example, a finger 66 made of alumina ceramics (purity 99.6% or more) (a base portion of the finger 66 is made of metal for positioning and leveling) and a shaft portion 68.
  • a biaxial drive unit (not shown) that rotates and moves up and down is provided.
  • the finger 66 has an arcuate portion 70 larger than the substrate 22, and three protrusions 72 extending from the arcuate portion 70 toward the center are provided at a predetermined interval.
  • the shaft portion 68 is configured to be shielded from the atmosphere when the processing space 50 is evacuated by a water-cooled magnetic seal.
  • the partition member 46 and the robot arm 64 are disposed in the processing space 50 so as not to completely separate the space in the processing space 50.
  • the substrate 22 transferred from the transfer chamber 12 to the processing chamber 16a via the vacuum robot 36 is configured to be temporarily placed (held) on these substrate holding pins 74a.
  • the substrate holding pins 74a and the substrate holding pins 74b are moved up and down.
  • the convective heat transfer becomes weaker as the substrate 22 is separated from the substrate platform 44a and the substrate platform 44b. That is, when the substrate holding pins 74a and the substrate holding pins 74b move the substrate 22 away from the substrate platform 44a and the substrate platform 44b, the temperature of the substrate 22 is lowered.
  • a lifter pin is used as an example of the substrate holding pin 74a and the substrate holding pin 74b.
  • the protrusions 72 provided on the finger 66 are provided on the outer circumferences of the substrate platform 44a and the substrate platform 44b.
  • Three grooves 76 in the vertical direction (vertical direction) are provided so as to be movable from above to below with respect to the upper surface.
  • FIG. 7 is a view of the lamp house 52 and the substrate mounting table 44 as viewed from the side.
  • FIG. 8 is a view of the lamp house 52 as viewed from above.
  • the lamp house 52a and lamp house 52b as heating devices are mainly composed of a plurality of halogen lamps 801, sockets 806 corresponding to the respective lamps, a lamp base 802 as a lamp arrangement portion for arranging the lamps, a window 804, and a side wall 810. Is done.
  • the halogen lamp 801 uses an electromagnetic wave having a wavelength of 0.2 ⁇ m to 10 ⁇ m, and more preferably 0.3 ⁇ m to 3 ⁇ m. Since the lamp house 52a and the lamp house 52b have the same configuration, the lamp house 52 will be described here.
  • the lamp 801 is electrically connected to the socket 806.
  • the socket 806 is covered with a block 807, and the block 807 is embedded in the lamp base 802 from above.
  • the block 807 is fitted and fixed to the lamp base 802 from a direction different from the processing space 50 for processing the substrate.
  • the block 807 is made of a material having high thermal conductivity, such as aluminum, that attenuates or blocks light emitted from the lamp 801.
  • the lamp base 802 is supported by the side wall 810.
  • a window 804 is provided between the lamp base 802 and the processing space to separate the atmosphere of the processing space from the atmosphere of the space where the lamp 801 is disposed.
  • the window 804 is fixed to the side wall 810 via an O-ring 808.
  • the window 804 is preferably made of a material that does not attenuate the level of light emitted from the lamp 801, and is made of, for example, quartz.
  • the lamp base 802 is provided with a cooling channel 803 through which a refrigerant flows. Further, a lid 811 for closing the cooling flow path 803 is provided so that the refrigerant does not leak.
  • a coolant supply pipe 805 is connected to the cooling channel 803, and the coolant flowing from a coolant source (not shown) is supplied to the cooling channel 803.
  • the lamp 801 is arranged on the lamp base 802 in a circumferential shape as shown in FIG.
  • Each lamp 801 is connected to a lamp power controller 902 so that it can be controlled independently.
  • the lamp 801 is managed for each group.
  • 801A, 801D, 801G, and 801J are the first group
  • 801B, 801E, 801H, and 801K are the second group
  • 801C, 801F, 801I, and 801L are the third group.
  • the lamps of each group are configured to be adjacent to each other, and the illuminance amount irradiated to the substrate is adjusted by adjusting the illuminance for each group. By adjusting the amount of illuminance between the groups, the substrate can be heated uniformly.
  • the diameter of the circumference where the lamp is installed is preferably in the relationship of processing substrate diameter> diameter of lamp installation> processing substrate radius from the viewpoint of uniformly irradiating the substrate.
  • FIG. 9 is a block diagram illustrating an example of a schematic configuration of the control unit 96 that controls the substrate processing apparatus 10 of FIG. 1.
  • the processing chamber controller 98, the transfer controller 100, the robot controller 102, the operation unit controller 104, and the lamp power controller 902 are connected to each other via a switching hub (SW Hub) 108 through a communication network 106 such as a LAN. It is provided as follows.
  • the switching hub (SW Hub) 108 is connected as a host controller to a customer host computer (Host) (not shown).
  • the controller 98 has a storage unit 123, and stores programs and recipes for operating the apparatus. Each configuration is controlled according to a program and a recipe.
  • the storage unit 123 is a recording medium, and includes, for example, a hard disk, a memory, and the like.
  • the robot controller 102 controls the vacuum robot 36 and the atmospheric robot (not shown) in FIG.
  • the operation unit controller 104 is an interface with an operator, and includes a display device 110 such as a display and an input device (not shown) such as a keyboard.
  • the processing chamber controller 98 and the transport controller 100 are connected to a digital signal line 112 and a sequencer 114 through a sequencer 114, and a valve digital I / O 116 for controlling on / off of a processing gas supply and an exhaust valve and a substrate holding pin 74 ascending and descending.
  • SW digital I / O 118 for controlling on / off of various switches (SW) and the like for controlling are connected.
  • a pressure controller 122 such as an auto pressure controller (APC) for controlling the pressure in the processing space 50 is connected to the processing chamber controller 98 through a serial line 120, for example.
  • the processing chamber controller 98 supplies control data (control instructions) for processing a substrate based on a process recipe designated by an operator via the operation unit controller 104, for example, pressure controller 122, supply / exhaust of processing gas. Output to a control valve, various switches, a mass flow controller, a temperature controller, and the like to control substrate processing in the processing space 50.
  • the transfer controller 100 sends control data (control instructions) for transferring a substrate based on a sequence recipe specified by an operator via the operation unit controller 104, for example, to a vacuum robot 36, an atmospheric robot (not shown). ), Outputs to the robot arm 64, the shaft portion 68, the substrate holding pin 74, etc., various valves and switches, etc., and controls the transport of the substrate in the substrate processing apparatus 10.
  • the lamp power controller 902 is connected to a SW digital I / O 118 for controlling on / off of each lamp power switch (SW) through the digital signal line 112 and the sequencer 114 to start each lamp. Control heating, stopping.
  • SW lamp power switch
  • the substrate processing process of the present invention is a step of manufacturing a semiconductor device, for example, a step of removing impurities from an interlayer insulating film for insulating between wirings on a device.
  • FIG. 10 is a flowchart showing the operation of the substrate processing apparatus.
  • 11A to 11D, 12E to 12H, and 13I to 13K are top views of the processing chamber 16.
  • FIG. The lower figure is an image of the cross section of the upper figure and is an explanatory drawing.
  • FIG. 14 is a diagram showing the relationship between the height of the substrate 22 and ON / OFF of the lamp power supply. In the following description, the operation of each unit constituting the substrate processing apparatus 10 is controlled by the control unit 96.
  • the insulating film is made of a low dielectric constant material such as organic polymer or organic silica glass.
  • the low dielectric constant insulating film (Low-K insulating film) has a dielectric constant lower than the dielectric constant of, for example, a silicon oxide film (for example, TEOS (Tetraoxysilane) oxide film) included in the passivation film.
  • a silicon oxide film for example, TEOS (Tetraoxysilane) oxide film
  • organic polymer and organic silica glass are formed by various methods.
  • organic silica glass it is formed by a CVD method using a mixed gas of trimethylsilane (SiH (CH3) 3) and oxygen.
  • SiH (CH3) 3 trimethylsilane
  • oxygen oxygen
  • the dielectric constant increases because the OH component is mixed (contained) in the film. Therefore, in the substrate processing step described below, the OH component is desorbed from the organic silica glass and modified to a film having a lower dielectric constant.
  • Step S101 Substrate Loading Step> The gate valve 35 is opened, and the substrate holding pin 74a of the substrate platform 44a and the substrate holding pin 74b of the substrate platform 44b are raised.
  • the robot arm 64 stands by on the substrate mounting portion 44b side and ascends together with the substrate holding pins 74a and the substrate holding pins 74b (FIG. 11A).
  • the robot arm 64 moves to the substrate mounting portion 44a side substantially horizontally as the shaft portion 68 rotates. At this time, the finger 66 of the robot arm 64 faces the gate valve 35 (FIG. 11B).
  • the vacuum robot 36 moves from the transfer chamber 12 to the processing chamber 16 via the gate valve 35 while simultaneously transferring the two substrates 22 placed on the upper finger 38a and the lower finger 38b, and places the substrate thereon. Stops above the portion 44a. At that time, the robot arm 64 stands by at a height position that fits between the upper finger 38a and the lower finger 38b of the finger pair 40 (FIG. 11 (c)).
  • Step S102 Substrate Transfer Process> In a state where the vacuum robot 36 does not operate as it is, the substrate holding pins 74a of the substrate platform 44a are raised, and the substrate 22 placed on the lower finger 38b is placed on the substrate holding pins 74a. Further, when the robot arm 64 is raised, the substrate 22 placed on the upper finger 38a is placed on the protrusion 72 of the robot arm 64 (FIG. 11D). That is, the substrate 22 is held on the substrate platform 44a.
  • the vacuum robot 36 returns into the transfer chamber 12. At this time, one substrate 22 is supported by the substrate holding pins 74a, and another substrate 22 is supported by the robot arm 64 further upward (FIG. 12E).
  • the robot arm 64 moves on the second processing unit 43b side and above the substrate mounting unit 44b substantially horizontally as the shaft unit 68 rotates while supporting the substrate 22. That is, the substrate 22 is held above the substrate platform 44b.
  • the gate valve 35 is closed (FIG. 12 (f)).
  • Step S103 Substrate Placement Step>
  • the shaft portion 68 is lowered, and the robot arm 64 is moved below the outer periphery of the substrate platform 44b. Then, the substrate 22 is supported by the substrate holding pins 74b (FIG. 12 (g)).
  • the substrate holding pins 74a of the substrate platform 44a and the substrate holding pins 74b of the substrate platform 44b descend almost simultaneously while supporting the substrates 22 and 22 substantially horizontally. That is, the substrate 22 and the substrate 22 are lowered so that the distance between each substrate and the substrate mounting table corresponding to each substrate becomes equal, and the substrate 22 and the substrate 22 are moved to the substrate mounting portion 44a and the substrate mounting portion. 44b (FIG. 12 (h)). Since the heater 45a and the heater 45b included in the substrate platform 44a and the substrate platform 44b are in a heated state, the substrate 22 and the substrate 22 can maintain the same temperature increase rate.
  • the lamp power supply of the lamp house 52a and the lamp house 52b is simultaneously turned on to start the lamp 801, and irradiation to the substrate 22 and the substrate 22 is started.
  • the wavelength of the electromagnetic wave emitted from each halogen lamp 801 is controlled to be constant. This wavelength may have an error as long as it does not affect the film processing described later.
  • the lamp power supply is turned on at the same time as the lowering of the shaft portion 68 is started, or at the same time after the substrate is placed on the substrate placing portion.
  • “simultaneous” includes controlling the electromagnetic waves irradiated from the halogen lamp 801 to reach the respective substrates 22 and 22 at the same time. Note that there may be an error in each operation as long as the difference in electromagnetic wave absorption between the low dielectric constant films formed on the respective substrates 22 is within a desired range. By simultaneously turning on in this way, it is possible to make the irradiation state of the electromagnetic wave irradiated from the halogen lamp 801 of the substrate 22 the same. Furthermore, it is possible to increase the rate of temperature rise and improve the in-plane temperature uniformity.
  • the electromagnetic wave generated from the halogen lamp 801 has a wavelength that is absorbed by a low dielectric constant film (for example, an insulating film) without being absorbed by a film (for example, a wiring) formed of metal. Therefore, in this step, the low dielectric constant film can be selectively heated without heating the wiring.
  • a low dielectric constant film for example, an insulating film
  • a film for example, a wiring
  • Nitrogen (N 2 ) gas and hydrogen (H 2 ) gas are supplied into the processing space 50 from the gas supply mechanism 51a and the gas supply mechanism 51b, and are exhausted from the exhaust port 62 to the outside of the processing chamber 16a.
  • the supplied nitrogen (N 2 ) gas and hydrogen (H 2 ) gas react with the OH component contained in the heated low dielectric constant film and desorb the OH component from the low dielectric constant film.
  • a lower dielectric constant can be achieved.
  • the wirings formed on the substrate can be more reliably insulated.
  • Step S105 It is determined whether a predetermined time has elapsed. If it is determined that the time has elapsed, the process proceeds to the next step S106. If it is determined that the predetermined time has not elapsed, the process returns to step S104, and the supply of nitrogen (N 2 ) gas and hydrogen (H 2 ) gas is continued.
  • Step S106 Gas supply stop> After a predetermined time has elapsed, the supply of nitrogen gas and hydrogen gas is stopped. After the supply is stopped, the substrate holding pins 74a and the substrate holding pins 74b are raised, and the substrate 22 and the substrate 22 are raised. At this time, as shown in FIG. 14, the lamp power supplies of the lamp house 52a and the lamp house 52b are simultaneously turned off, and the irradiation of the lamp 801 is stopped (FIG. 2113 (i)). The timing at which the lamp power is turned off refers to control so that the electromagnetic waves emitted from the halogen lamp 801 do not reach the respective substrates 22 and 22 at the same time.
  • the substrate holding pin 74a and the substrate holding pin 74b are raised at the same time or after the substrate holding pin 74a and the substrate holding pin 74b are raised to predetermined positions, but there is an error that does not affect the heating temperature. Also good.
  • the heating state of the substrate 22 placed on the substrate platform 44a and the substrate 22 placed on the substrate platform 44b can be made the same, and the temperature drop rate can be improved. .
  • Step S108 Substrate Unloading Process Then, the empty vacuum robot 36 moves from the transfer chamber 12 to the processing chamber 16 via the gate valve 35, and the processed substrate 22 and the substrate 22 are unloaded from the processing chamber 16 by the reverse procedure of loading (see FIG. 13 (k)).
  • the substrate processing step As shown in FIG. 14, after the substrate 22 is carried into the processing chamber 16, one substrate is transferred to the substrate holding pin 74a, and then the substrate holding pin 74a is lowered. The other substrate is placed on the substrate placing portion 44b by the rotation of the robot arm 64 and the lowering of the substrate holding pin 74b.
  • the lamp power supply is substantially simultaneously with the lowering of the substrate 22. Is turned on, and the lamp 801 is turned on. Further, after the substrate processing, the two substrates 22 and 22 placed on the substrate mounting table 44 rise while being supported by the substrate holding pins 74a and 74b, and the lamp power is turned off almost simultaneously with this rise. The lamp 801 is turned off. Thereby, the heating condition of a board
  • this invention is not limited to said embodiment.
  • nitrogen gas and hydrogen gas inert gas are used as the gas.
  • the present invention is not limited to this, and the gas type may be changed according to the process to be processed. For example, when a film is formed by a CVD (Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method, a gas corresponding to the film may be supplied.
  • CVD Chemical Vapor Deposition
  • ALD Atomic Layer Deposition
  • the object to be processed having an interlayer insulating film formed of a low dielectric material is expressed as a substrate.
  • any substrate having an interlayer insulating film may be used, and includes, for example, a semiconductor chip.
  • a second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, The first substrate is supported by the first substrate holding pins, and the second substrate is further moved forward above the second substrate mounting table.
  • a control unit for controlling to start the first ramp and the second ramp while being supported by the second substrate transport member, a substrate processing apparatus having a.
  • substrate is a board
  • Additional remark 4 The substrate processing apparatus of Additional remark 3 which light-extinguishes a said 1st lamp
  • the first substrate is supported by the first substrate holding pin, and the second substrate is supported by the second substrate transport member above the second substrate mounting table.
  • electromagnetic waves are applied to the first substrate from the first lamp, and electromagnetic waves are applied to the second substrate from the second lamp.
  • the first lamp and The substrate processing apparatus according to appendix 1, wherein the second lamp is controlled to stop electromagnetic wave irradiation.
  • substrate is a board
  • the substrate processing apparatus according to claim 7.
  • Additional remark 10 The substrate processing apparatus of Additional remark 9 which light-extinguishes said 1st lamp
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting.
  • a second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A first substrate is placed on the first substrate platform, and a second substrate is placed on the second substrate platform.
  • the substrate processing apparatus When increasing the first substrate and the second substrate, the substrate processing apparatus and a control section for controlling to start the first ramp and the second ramp.
  • a second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table.
  • a method for manufacturing a semiconductor device A method for manufacturing a semiconductor device.
  • a substrate processing method using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one of the transferred substrates as the substrate Placing the second substrate on the first substrate holding pin, and further transferring the other substrate to the second substrate transport member; and the second transport member above the second substrate platform and the other substrate
  • a step of supporting the substrate, the at least one substrate is supported by the first substrate holding pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table.
  • a substrate processing method comprising a step of starting the first lamp and the second lamp in a closed state.
  • a method of manufacturing a semiconductor device using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one substrate loaded Is placed on the first substrate holding pin, and the other substrate is transferred to the second substrate transport member, and the substrate holding pin and the second substrate transport member are the second substrate.
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table.
  • a substrate processing method using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one of the transferred substrates as the substrate A step of placing the first substrate on the first substrate holding pin and transferring the other substrate to the second substrate transport member; and a state in which the substrate is placed on the substrate placement table, and the first lamp A heating step in which the second lamp heats the substrate; and after the heating step, the at least one substrate is supported by the first substrate holding pin, and the other substrate is mounted on the second substrate.
  • a substrate processing method comprising a step of activating the first lamp and the second lamp before becoming a state of being supported by the second substrate transport member
  • the first substrate carrying member carries a plurality of substrates from the carrying chamber to the processing chamber, and above the first substrate mounting portion in a state where the carried at least one substrate is heated. Holding the second substrate transporting member on the second substrate transporting member, and the second substrate transporting member in a state where the second substrate transporting member is heated. A step of holding the substrate, the at least one substrate is supported above the first substrate mounting portion, and the second substrate is positioned above the second substrate mounting portion. And a step of activating the first lamp and the second lamp while being supported by the substrate transport member.
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table.
  • a second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table.
  • a program that executes the process of starting up.
  • a transfer chamber a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table.
  • a second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table.
  • a recording medium having a program for executing
  • Substrate processing apparatus 12 Transfer chamber 16a, 16b Processing chamber 22 Substrate 36 Vacuum robot (first substrate transfer member) 43a, 43b Processing units 44a, 44b Substrate platforms 52a, 52b Lamp house 64 Robot arm (second substrate transport member) 74a, 74b Substrate holding pin (lifter pin) 96 Control unit 801 Lamp (heating source) 902 Lamp power controller (lamp power supply)

Abstract

In order to improve the rate at which the temperature of a substrate increases and decreases when heating and processing the substrate, a substrate processing device is provided with: a processing chamber for processing a substrate; a substrate support for supporting the substrate within the processing chamber; a heating unit provided so as to face the substrate-supporting surface of the substrate support; and a control unit for controlling so that after the substrate is introduced into the processing chamber, the substrate is lowered and mounted on the substrate support, and the heating unit is activated.

Description

基板処理装置及び半導体装置の製造方法Substrate processing apparatus and semiconductor device manufacturing method
　本発明は、基板を加熱して処理する基板処理装置及び半導体装置の製造方法に関する。 The present invention relates to a substrate processing apparatus for heating and processing a substrate and a method for manufacturing a semiconductor device.
　半導体装置を製造する際、所望の温度に加熱された半導体基板（ウエハ）等にガスを晒すことで様々な処理がなされている。基板を１枚ずつ処理する枚葉式の基板処理装置では、基板を載置する基板載置部に内包されたヒータや、基板載置部の基板載置面に対向するように配置されたランプ加熱機構などを用いて基板を加熱している。基板を加熱して処理する基板処理装置としては、例えば特許文献１のような装置が知られている。 When manufacturing a semiconductor device, various processes are performed by exposing a gas to a semiconductor substrate (wafer) or the like heated to a desired temperature. In a single-wafer type substrate processing apparatus that processes substrates one by one, a heater included in a substrate mounting portion on which a substrate is mounted, or a lamp disposed to face the substrate mounting surface of the substrate mounting portion The substrate is heated using a heating mechanism or the like. As a substrate processing apparatus for heating and processing a substrate, for example, an apparatus as disclosed in Patent Document 1 is known.
特開２００９－８８３４７号公報JP 2009-88347 A
　しかしながら、上述のランプ加熱機構を用いた基板処理装置において、基板の昇温、降温レートや処理の均一性を向上させる必要がある。 However, in the substrate processing apparatus using the above-described lamp heating mechanism, it is necessary to improve the temperature increase / decrease rate and the processing uniformity of the substrate.
　そこで、本発明は、基板を加熱して処理する際における基板の昇温、降温レート、処理の均一性を向上させることが可能な基板処理装置及び半導体装置の製造方法を提供することを目的とする。 SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of improving the temperature rise / fall rate of the substrate and the uniformity of processing when the substrate is heated and processed. To do.
本発明の一態様によれば、搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記第１の基板保持ピンに第１の基板が支持され、更に第２の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと前記第２のランプを起動するよう制御する制御部と、を有する基板処理装置が提供される。 According to one aspect of the present invention, a transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing A first process comprising a first substrate mounting table disposed in a room and provided with a first substrate holding pin, and a first lamp for irradiating an electromagnetic wave to the substrate mounted on the first substrate mounting table. And a second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the processing chamber and provided with a second substrate holding pin, and the second substrate A second processing unit having a second lamp for irradiating the substrate placed on the mounting table with electromagnetic waves; and a second substrate for transporting the substrate between the first processing unit and the second processing unit. A first substrate is supported by a conveying member and the first substrate holding pin, and a second substrate is the second substrate. A control unit for controlling to start the second ramp and said first ramp while being supported by the second substrate transport member in table above, a substrate processing apparatus having a provided.
また、本発明の他の態様によれば、搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部は前記処理室に配置され、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた基板処理方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記基板載置台に基板が載置された状態で、前記第１のランプと前記第２のランプが基板を加熱する加熱工程と、前記加熱工程の後、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態となる前に、前記第１のランプと前記第２のランプを起動する工程とを有する基板処理方法が提供される。 According to another aspect of the present invention, a transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, And a first substrate mounting table disposed in the processing chamber and provided with a first substrate holding pin, and a first lamp for irradiating the substrate mounted on the first substrate mounting table with an electromagnetic wave. A first substrate, a second substrate mounting table disposed adjacent to the first processor on a side different from the transfer chamber in the processing chamber, and provided with a second substrate holding pin; A second processing unit having a second lamp for irradiating an electromagnetic wave to the substrate placed on the second substrate mounting table, the first processing unit and the second processing unit are disposed in the processing chamber, A second substrate transport member for transporting a substrate between the first processing unit and the second processing unit; A substrate processing method using a substrate processing apparatus, wherein the first substrate transfer member carries a plurality of substrates from the transfer chamber into the process chamber; At least one substrate is placed on the first substrate holding pin, and the other substrate is transferred to the second substrate transport member; and the substrate is placed on the substrate platform. A heating step in which the first lamp and the second lamp heat the substrate; and after the heating step, the at least one substrate is supported by the first substrate holding pin, and the other substrate Provides a substrate processing method including a step of starting the first lamp and the second lamp before the second substrate carrying member is supported by the second substrate transport member above the second substrate mounting table. Is done.
　本発明によれば、基板を加熱して処理する際における基板の昇温、降温レート、処理の均一性を向上させることが可能となる。 According to the present invention, it is possible to improve the temperature rise rate, the temperature fall rate, and the uniformity of processing when heating and processing a substrate.
本発明の一実施形態に係る基板処理装置の概要を示す上面図である。It is a top view which shows the outline | summary of the substrate processing apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板処理装置のロードロック室から処理室までの概要を示す側面図である。It is a side view showing an outline from a load lock room to a processing room of a substrate processing apparatus concerning one embodiment of the present invention. 本発明の一実施形態に係る処理室の概要を示す断面図である。It is sectional drawing which shows the outline | summary of the process chamber which concerns on one Embodiment of this invention. 本発明の一実施形態に係る処理室の概要を示す斜視図である。It is a perspective view which shows the outline | summary of the process chamber which concerns on one Embodiment of this invention. 本発明の一実施形態に係る処理室の概要を示す上面図である。It is a top view which shows the outline | summary of the process chamber which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板保持ピンの動作を示す斜視図である。It is a perspective view showing operation of a substrate holding pin concerning one embodiment of the present invention. 本発明の一実施形態に係る加熱部を示す概略図である。It is the schematic which shows the heating part which concerns on one Embodiment of this invention. 本発明の一実施形態に係る加熱部を示す上面図である。It is a top view which shows the heating part which concerns on one Embodiment of this invention. 本発明の一実施形態に係る制御部の構成図である。It is a block diagram of the control part which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板処理装置の動作を示すフローチャートである。It is a flowchart which shows operation | movement of the substrate processing apparatus which concerns on one Embodiment of this invention. 本発明の一実施形態に係る基板処理装置の動作を示すフローであって、処理室内を上図は上面からみた図であり、下図は横面からみた図である。It is a flow which shows operation | movement of the substrate processing apparatus which concerns on one Embodiment of this invention, Comprising: The upper figure is the figure which looked at the process chamber from the upper surface, and the lower figure is the figure seen from the side surface. 本発明の一実施形態に係る基板処理装置の動作を示すフローであって、処理室内を上図は上面からみた図であり、下図は横面からみた図であって図１１の続きを示す。It is a flow which shows operation | movement of the substrate processing apparatus which concerns on one Embodiment of this invention, Comprising: The upper figure is the figure which looked at the process chamber from the upper surface, and the lower figure is the figure seen from the side surface, and shows the continuation of FIG. 本発明の一実施形態に係る基板処理装置の動作を示すフローであって、処理室内を上図は上面からみた図であり、下図は横面からみた図であって図１２の続きを示す。It is a flow which shows operation | movement of the substrate processing apparatus which concerns on one Embodiment of this invention, Comprising: The upper figure is the figure which looked at the process chamber from the upper surface, and the lower figure is the figure seen from the side surface, and shows the continuation of FIG. 本発明の一実施形態に係る基板処理工程における基板の高さとランプ電源のＯＮ／ＯＦＦの関係を示す図である。It is a figure which shows the relationship between the height of the board | substrate in the substrate processing process which concerns on one Embodiment of this invention, and ON / OFF of a lamp power supply.
＜本発明の一実施形態＞
　以下に、本発明の一実施形態について説明する。 <One Embodiment of the Present Invention>
Hereinafter, an embodiment of the present invention will be described.
（１）基板処理装置の構成
　図１及び図２に、本実施形態に係る半導体製造装置などの基板処理装置１０の概要を示す。基板処理装置１０は、例えば搬送室１２と、搬送室１２を中心として配置されるロードロック室１４ａ，ロードロック室１４ｂ及び２つの処理室１６ａ，処理室１６ｂと、を備えている。ロードロック室１４ａ，ロードロック室１４ｂの上流側には、カセットなどのフープ（キャリア）とロードロック室１４ａ，ロードロック室１４ｂとの間で基板を搬送する大気搬送室（ＥＦＥＭ：Ｅｑｕｉｐｍｅｎｔ　Ｆｒｏｎｔ　Ｅｎｄ　Ｍｏｄｕｌｅ）２０が配置されている。大気搬送室２０には、例えば２５枚の基板２２を縦方向に一定間隔を隔てて収容可能なフープ（図示せず）が３台配置されている。また、大気搬送室２０内には、大気搬送室２０とロードロック室１４ａ，ロードロック室１４ｂとの間で基板２２を例えば５枚ずつ搬送する図示しない大気ロボットが配置されている。搬送室１２、ロードロック室１４ａ，ロードロック室１４ｂ及び処理室１６ａ，処理室１６ｂは、例えばアルミニウム（Ａ５０５２）等の材料により一体形成された容器（装置本体とも呼ぶ）の内部に構成されている。 (1) Configuration of Substrate Processing Apparatus FIGS. 1 and 2 show an outline of a substrate processing apparatus 10 such as a semiconductor manufacturing apparatus according to this embodiment. The substrate processing apparatus 10 includes, for example, a transfer chamber 12, and a load lock chamber 14a, a load lock chamber 14b, and two process chambers 16a and 16b disposed around the transfer chamber 12. At the upstream side of the load lock chamber 14a and the load lock chamber 14b, an atmospheric transfer chamber (EFEM) for transferring the substrate between a hoop (carrier) such as a cassette and the load lock chamber 14a and the load lock chamber 14b. ) 20 is arranged. In the atmospheric transfer chamber 20, for example, three hoops (not shown) that can accommodate, for example, 25 substrates 22 at regular intervals in the vertical direction are arranged. In the atmospheric transfer chamber 20, an atmospheric robot (not shown) that transfers, for example, five substrates 22 between the atmospheric transfer chamber 20 and the load lock chamber 14 a and the load lock chamber 14 b is disposed. The transfer chamber 12, the load lock chamber 14a, the load lock chamber 14b, the processing chamber 16a, and the processing chamber 16b are configured inside a container (also referred to as an apparatus main body) integrally formed of a material such as aluminum (A5052). .
　なお、ロードロック室１４ａ，ロードロック室１４ｂは、ロードロック室１４ａ，ロードロック室１４ｂ側から処理室１６ａ，処理室１６ｂ側に向かう軸に対して線対称となる位置に配置されており、互いに同じ構成を有する。また、処理室１６ａ，処理室１６ｂも、同軸に対して線対称となる位置に配置されており、互いに同じ構成を有する。以下、ロードロック室１４ａ及び処理室１６ａを中心に説明する。 The load lock chamber 14a and the load lock chamber 14b are disposed at positions that are line-symmetric with respect to the axis from the load lock chamber 14a and the load lock chamber 14b toward the processing chamber 16a and the processing chamber 16b. Have the same configuration. The processing chamber 16a and the processing chamber 16b are also arranged at positions that are line-symmetric with respect to the same axis, and have the same configuration. Hereinafter, the load lock chamber 14a and the processing chamber 16a will be mainly described.
　図２に示すように、ロードロック室１４ａ内には、例えば２５枚のウエハなどの基板２２を縦方向に一定間隔を隔てて収容する基板支持体（ボート）２４が設けられている。基板支持体２４は、例えば炭化珪素からなり、上部板２６と、下部板２８と、上部板２６と下部板２８とを接続する例えば３つの支柱３０と、を有する。支柱３０の長手方向内側には、基板２２を平行姿勢で支持するための載置部（水平溝）３２が、長手方向に例えば２５個配列されている。また、基板支持体２４は、ロードロック室１４ａ内において、鉛直方向に移動（上下方向に移動）するとともに、鉛直方向に延びる回転軸を軸として回転するように構成されている。基板支持体２４が鉛直方向に移動することにより、基板支持体２４の３つの支柱３０それぞれに設けられた載置部３２の上面に、後述するフィンガ対４０から基板２２が同時に２枚ずつ移載される。また、基板支持体２４が鉛直方向に移動することにより、基板支持体２４からフィンガ対４０へも基板２２が同時に２枚ずつ移載されようになっている。 As shown in FIG. 2, a substrate support (boat) 24 is provided in the load lock chamber 14a. The substrate support (boat) 24 accommodates substrates 22 such as 25 wafers at a predetermined interval in the vertical direction. The substrate support 24 is made of, for example, silicon carbide, and includes an upper plate 26, a lower plate 28, and, for example, three support columns 30 that connect the upper plate 26 and the lower plate 28. On the inner side in the longitudinal direction of the support column 30, for example, 25 placement portions (horizontal grooves) 32 for supporting the substrate 22 in a parallel posture are arranged in the longitudinal direction. The substrate support 24 is configured to move in the vertical direction (move up and down) in the load lock chamber 14a, and to rotate about a rotation axis extending in the vertical direction. When the substrate support 24 moves in the vertical direction, two substrates 22 are simultaneously transferred from the finger pair 40 to be described later onto the upper surface of the mounting portion 32 provided on each of the three support columns 30 of the substrate support 24. Is done. Further, when the substrate support 24 moves in the vertical direction, two substrates 22 are transferred from the substrate support 24 to the finger pair 40 at the same time.
　図２に示すように、搬送室１２内には、ロードロック室１４ａと処理室１６ａとの間で基板２２を搬送する第１の基板搬送部材の一例としての真空ロボット３６が設けられている。真空ロボット３６は、上フィンガ３８ａ及び下フィンガ３８ｂから構成されるフィンガ対４０が設けられたアーム４２を有する。上フィンガ３８ａ及び下フィンガ３８ｂは、例えば同一の形状をしており、上下方向に所定の間隔で離間され、アーム４２からそれぞれ略水平に同じ方向に延びて、それぞれ基板２２を同時に支持することができるようにされている。アーム４２は、鉛直方向に延びる回転軸を軸として回転するようにされているとともに、水平方向に移動するようにされ、同時に２枚の基板２２を搬送可能にされている。 As shown in FIG. 2, a vacuum robot 36 is provided in the transfer chamber 12 as an example of a first substrate transfer member that transfers the substrate 22 between the load lock chamber 14a and the processing chamber 16a. The vacuum robot 36 has an arm 42 provided with a finger pair 40 composed of an upper finger 38a and a lower finger 38b. The upper finger 38a and the lower finger 38b have, for example, the same shape, are spaced apart at a predetermined interval in the vertical direction, extend substantially horizontally from the arm 42 in the same direction, and can simultaneously support the substrate 22 respectively. It has been made possible. The arm 42 is configured to rotate about a rotation axis extending in the vertical direction, and to move in the horizontal direction, so that the two substrates 22 can be conveyed simultaneously.
　図２に示すように、処理室１６ａ内には、後述する処理空間５０が設けられている。処理空間５０内には、第１の基板載置部である基板載置部４４ａ，第２の基板載置部である基板載置部４４ｂが設けられている。基板載置部４４ａと基板載置部４４ｂとの間の空間は、仕切り部材４６により水平方向の一部が仕切られ、基板載置部４４ａを有する第１の処理部４３ａと基板載置部４４ｂを有する第２の処理部４３ｂが形成されている。真空ロボット３６を介して処理室１６ａ内に搬入された２枚の基板２２は、基板載置部４４ａ，基板載置部４４ｂ上にそれぞれ載置された後、処理空間５０内で併行して熱処理されるように構成されている。熱処理を含む基板処理工程については後述する。 As shown in FIG. 2, a processing space 50 described later is provided in the processing chamber 16a. In the processing space 50, a substrate platform 44a as a first substrate platform and a substrate platform 44b as a second substrate platform are provided. The space between the substrate platform 44a and the substrate platform 44b is partly partitioned in the horizontal direction by the partition member 46, and the first processing unit 43a and the substrate platform 44b having the substrate platform 44a. A second processing unit 43b having the structure is formed. The two substrates 22 carried into the processing chamber 16a via the vacuum robot 36 are placed on the substrate platform 44a and the substrate platform 44b, respectively, and are then heat-treated in parallel in the processing space 50. It is configured to be. Substrate processing steps including heat treatment will be described later.
　図３から図５に、処理室１６ａの概要を示す。図３に示すように、処理室１６ａの下部側（底部及び側部）は、下側容器４７により形成されている。下側容器４７は、アルミニウム等により一体成型された上述の装置本体の一部を構成する。処理室１６ａの上部開口は、下側容器４７の上部に設けられた蓋４８によって閉塞されている。蓋４８の下方には処理空間５０が形成されている。蓋４８は、基板載置部４４ａ，基板載置部４４ｂに対応する位置がそれぞれ開口している。係る開口には、加熱装置としてのランプハウスが設けられている。加熱装置は、第１の加熱部としてのランプハウス５２ａ，第２の加熱部としてのランプハウス５２ｂを有している。ランプハウス５２ａ，ランプハウス５２ｂの構成については後述する。 3 to 5 show an outline of the processing chamber 16a. As shown in FIG. 3, the lower side (bottom part and side part) of the processing chamber 16 a is formed by a lower container 47. The lower container 47 constitutes a part of the above-described apparatus main body integrally formed of aluminum or the like. The upper opening of the processing chamber 16 a is closed by a lid 48 provided at the upper part of the lower container 47. A processing space 50 is formed below the lid 48. The lid 48 is opened at positions corresponding to the substrate platform 44a and the substrate platform 44b. The opening is provided with a lamp house as a heating device. The heating device includes a lamp house 52a as a first heating unit and a lamp house 52b as a second heating unit. The structures of the lamp house 52a and the lamp house 52b will be described later.
　蓋４８における基板載置部４４ａ，基板載置部４４ｂに対応する位置であって、ランプハウス５２ａ，ランプハウス５２ｂの近傍には、第１のガス供給機構５１ａ，第２のガス供給機構５１ｂが設けられている。ガス供給機構５１ａ，ガス供給機構５１ｂの上流端（図中上端）には、図示しないガス供給管の下流端がそれぞれ接続されている。ガス供給管には、上流側から順に、例えばＮ2ガスや希ガス（ＡｒガスはＨｅガス等）などの不活性ガスや、他の処理ガスを供給する図示しないガス供給源、流量制御装置としてのマスフローコントローラ、開閉バルブが設けられている。これにより、ガス供給機構５１ａ，ガス供給機構５１ｂから、それぞれ処理空間５０内にガスを供給することが可能なように構成されている。なお、処理空間５０内は、後述する第１の排気口５８、第２の排気口６０、第３の排気口６２を介して、図示しないポンプにより例えば０．１Ｐａ程度までの真空にすることができるように構成されている。 The first gas supply mechanism 51a and the second gas supply mechanism 51b are located at positions corresponding to the substrate mounting portion 44a and the substrate mounting portion 44b in the lid 48 and in the vicinity of the lamp house 52a and the lamp house 52b. Is provided. A downstream end of a gas supply pipe (not shown) is connected to an upstream end (upper end in the drawing) of the gas supply mechanism 51a and the gas supply mechanism 51b. In the gas supply pipe, in order from the upstream side, for example, an inert gas such as N 2 gas or rare gas (Ar gas is He gas, etc.), a gas supply source (not shown) for supplying other processing gas, and a flow rate control device Mass flow controller and open / close valve are provided. Thus, the gas supply mechanism 51a and the gas supply mechanism 51b are configured to be able to supply gas into the processing space 50, respectively. The processing space 50 is evacuated to, for example, about 0.1 Pa by a pump (not shown) via a first exhaust port 58, a second exhaust port 60, and a third exhaust port 62, which will be described later. It is configured to be able to.
　上述したように、基板載置部４４ａ，基板載置部４４ｂは、処理空間５０内の同一空間内で独立して配置され、処理空間５０内であってランプハウス５２ａ，ランプハウス５２ｂの下方側にそれぞれ設けられている。基板載置部４４ａ，基板載置部４４ｂの上面は円盤状に形成されている。基板載置部４４ａ，基板載置部４４ｂの下方側の面には、それぞれ第１のフランジ５３ａ，第２のフランジ５３ｂが設けられている。フランジ５３ａ，フランジ５３ｂの下方には、下側容器４７に立設された支柱４９が接続されている。基板載置部４４ａ，基板載置部４４ｂは、下方から支柱４９により支持されると共に、側方から固定部材５２により固定されている。 As described above, the substrate platform 44a and the substrate platform 44b are independently arranged in the same space in the processing space 50, and are located in the processing space 50 and below the lamp house 52a and the lamp house 52b. Are provided respectively. The upper surfaces of the substrate platform 44a and the substrate platform 44b are formed in a disc shape. A first flange 53a and a second flange 53b are provided on the lower surfaces of the substrate platform 44a and the substrate platform 44b, respectively. A support column 49 erected on the lower container 47 is connected to the lower side of the flange 53a and the flange 53b. The substrate platform 44a and the substrate platform 44b are supported by a support column 49 from below and fixed by a fixing member 52 from the side.
　基板載置部４４ａ，基板載置部４４ｂの上面（すなわちランプハウス５２ａ，ランプハウス５２ｂに対向する面）には、基板２２を水平姿勢で支持する第１の基板支持面５５ａ，第２の基板支持面５５ｂがそれぞれ設けられている。基板支持面５５ａ，基板支持面５５ｂのそれぞれの高さは、処理空間５０内の高さよりも低くされている。また、基板載置部４４内には、抵抗加熱部としてのヒータ４５が設けられている。基板載置部４４ａには第１の抵抗加熱部であるヒータ４５ａが、基板載置部４４ｂには第２の抵抗加熱部であるヒータ４５ｂが設けられており、基板支持面５５ａ，基板支持面５５ｂ上に載置した基板２２を昇温可能に構成されている。基板載置部４４ａ，基板載置部４４ｂは、それぞれ例えばアルミニウム（Ａ５０５２又はＡ５０５６等）等により形成されている。基板載置部４４ａ，基板載置部４４ｂをアルミニウムのような熱伝導率の高い材質により形成することで、基板２２に効率よく熱を伝達することが可能となる。なお、基板載置部４４ａ，基板載置部４４ｂは、例えば石英やアルミナ等の非金属耐熱材料によって形成することもできる。係る場合、基板２２の金属汚染を回避できる。 A first substrate support surface 55a and a second substrate for supporting the substrate 22 in a horizontal posture are provided on the upper surfaces of the substrate platform 44a and the substrate platform 44b (that is, the surfaces facing the lamp house 52a and the lamp house 52b). Support surfaces 55b are respectively provided. The heights of the substrate support surface 55 a and the substrate support surface 55 b are set lower than the height in the processing space 50. A heater 45 as a resistance heating unit is provided in the substrate platform 44. The substrate platform 44a is provided with a heater 45a as a first resistance heating unit, and the substrate platform 44b is provided with a heater 45b as a second resistance heating unit. The substrate 22 placed on 55b can be heated. The substrate platform 44a and the substrate platform 44b are each formed of, for example, aluminum (A5052 or A5056). By forming the substrate platform 44a and the substrate platform 44b with a material having high thermal conductivity such as aluminum, heat can be efficiently transferred to the substrate 22. The substrate platform 44a and the substrate platform 44b can also be formed of a nonmetallic heat resistant material such as quartz or alumina. In such a case, metal contamination of the substrate 22 can be avoided.
　基板載置部４４ａと基板載置部４４ｂとの間には、上述した仕切り部材４６が配置されている。仕切り部材４６は、例えばアルミニウム（Ａ５０５２又はＡ５０５６等）、石英、アルミナ等により形成されており、下側容器４７に対して着脱自在に設けられた例えば角柱状の部材として構成されている。 The partition member 46 described above is disposed between the substrate platform 44a and the substrate platform 44b. The partition member 46 is made of, for example, aluminum (A5052 or A5056), quartz, alumina, or the like, and is configured as a prismatic member that is detachably provided to the lower container 47, for example.
　基板載置部４４ａ，基板載置部４４ｂの周囲には、それぞれの外周を囲むように第１の排気バッフルリング５４ａ，第２の排気バッフルリング５４ｂが配置されている（図４参照）。排気バッフルリング５４ａ，排気バッフルリング５４ｂには、周方向に複数の孔部５６が設けられている（図５参照）。基板載置部４４ａ，基板載置部４４ｂ及び排気バッフルリング５４ａ，排気バッフルリング５４ｂの下方には、第１の排気口５８が形成されている（図３参照）。第１の排気口５８は、基板載置部４４ａ，基板載置部４４ｂの下方に設けられた第２の排気口６０を介して処理空間５０の下方側の空間に連通している。処
理空間５０の下方側の空間は、下側容器４７に設けられた第３の排気口６２を介して図示しない真空ポンプにより排気可能に構成されている。 A first exhaust baffle ring 54a and a second exhaust baffle ring 54b are disposed around the substrate platform 44a and the substrate platform 44b so as to surround the outer peripheries thereof (see FIG. 4). A plurality of holes 56 are provided in the exhaust baffle ring 54a and the exhaust baffle ring 54b in the circumferential direction (see FIG. 5). A first exhaust port 58 is formed below the substrate platform 44a, the substrate platform 44b, the exhaust baffle ring 54a, and the exhaust baffle ring 54b (see FIG. 3). The first exhaust port 58 communicates with the space below the processing space 50 via the second exhaust port 60 provided below the substrate platform 44a and the substrate platform 44b. The space below the processing space 50 is configured to be evacuated by a vacuum pump (not shown) through a third exhaust port 62 provided in the lower container 47.
　したがって、上述のガス供給機構５１ａ，ガス供給機構５１ｂから処理空間５０内に供給されたガスは、基板載置部４４ａ，基板載置部４４ｂに支持された基板２２に供給された後、排気バッフルリング５４ａ，排気バッフルリング５４ｂに設けられた孔部５６を介して第１の排気口５８に向けて排気され、基板載置部４４ａ，基板載置部４４ｂの下方に設けられた第２の排気口６０を介して処理空間５０の下方側に排気された後、下側容器４７に設けられた第３の排気口６２を介して処理室１６ａの外部へ排気されるように構成されている。 Therefore, the gas supplied into the processing space 50 from the gas supply mechanism 51a and the gas supply mechanism 51b described above is supplied to the substrate 22 supported by the substrate platform 44a and the substrate platform 44b, and then the exhaust baffle. A second exhaust provided below the substrate platform 44a and the substrate platform 44b is exhausted toward the first exhaust port 58 through a hole 56 provided in the ring 54a and the exhaust baffle ring 54b. After being exhausted to the lower side of the processing space 50 through the port 60, it is configured to be exhausted to the outside of the processing chamber 16 a through a third exhaust port 62 provided in the lower container 47.
　図４及び図５に示すように、仕切り部材４６の一端側には、基板２２を搬送可能な第２の基板搬送部材の一例としてのロボットアーム６４が配置されている。ロボットアーム６４は、上述した真空ロボット３６が搬送する２枚の基板２２のうち１枚を基板載置部４４ｂに向けて搬送するとともに、基板載置部４４ｂから回収するようにされている。ロボットアーム６４は、例えばアルミナセラミックス（純度９９．６％以上）からなるフィンガ６６（フィンガ６６の基部は位置やレベル合わせのために金属からなる）と、軸部６８とを有し、軸部６８に回転及び昇降を行う２軸の駆動ユニット（図示せず）が設けられている。フィンガ６６は、基板２２よりも大きな弧状部７０を有し、この弧状部７０から中心に向けて延びる３つの突起部７２が所定の間隔で設けられている。軸部６８は、水冷された磁気シールにより、処理空間５０が真空にされた場合の大気と遮断をするように構成されている。なお、仕切り部材４６及びロボットアーム６４は、処理空間５０内の空間を完全に分離することがないように、処理空間５０内に配置されている。 As shown in FIGS. 4 and 5, a robot arm 64 as an example of a second substrate transport member capable of transporting the substrate 22 is disposed on one end side of the partition member 46. The robot arm 64 conveys one of the two substrates 22 conveyed by the vacuum robot 36 toward the substrate platform 44b and collects it from the substrate platform 44b. The robot arm 64 includes, for example, a finger 66 made of alumina ceramics (purity 99.6% or more) (a base portion of the finger 66 is made of metal for positioning and leveling) and a shaft portion 68. A biaxial drive unit (not shown) that rotates and moves up and down is provided. The finger 66 has an arcuate portion 70 larger than the substrate 22, and three protrusions 72 extending from the arcuate portion 70 toward the center are provided at a predetermined interval. The shaft portion 68 is configured to be shielded from the atmosphere when the processing space 50 is evacuated by a water-cooled magnetic seal. The partition member 46 and the robot arm 64 are disposed in the processing space 50 so as not to completely separate the space in the processing space 50.
　基板載置部４４ａ，基板載置部４４ｂには、図６に示すような第１の基板保持ピン７４ａ、第２の基板保持ピン７４ｂが少なくとも３本ずつ鉛直方向に貫通している。搬送室１２内から真空ロボット３６を介して処理室１６ａ内に搬送された基板２２は、一時的にこれらの基板保持ピン７４ａ上に載置（保持）されるように構成されている。基板保持ピン７４ａ、基板保持ピン７４ｂは、上下方向に昇降するようにされている。基板２２は、基板載置部４４ａ、基板載置部４４ｂから離すほど対流伝熱が弱まる。すなわち、基板保持ピン７４ａ、基板保持ピン７４ｂが基板２２を基板載置部４４ａ、基板載置部４４ｂから離間させると、基板２２は降温される。この基板保持ピン７４ａ、基板保持ピン７４ｂの一例としてリフターピンが用いられる。
　また、図４や図５に示すように、基板載置部４４ａ，基板載置部４４ｂの外周には、フィンガ６６が備える上述の突起部７２が基板載置部４４ａ，基板載置部４４ｂの上面に対して上方から下方へ移動可能なように、縦方向（上下方向）の溝部７６がそれぞれ３本設けられている。 At least three first substrate holding pins 74a and two second substrate holding pins 74b as shown in FIG. 6 penetrate through the substrate platform 44a and the substrate platform 44b in the vertical direction. The substrate 22 transferred from the transfer chamber 12 to the processing chamber 16a via the vacuum robot 36 is configured to be temporarily placed (held) on these substrate holding pins 74a. The substrate holding pins 74a and the substrate holding pins 74b are moved up and down. The convective heat transfer becomes weaker as the substrate 22 is separated from the substrate platform 44a and the substrate platform 44b. That is, when the substrate holding pins 74a and the substrate holding pins 74b move the substrate 22 away from the substrate platform 44a and the substrate platform 44b, the temperature of the substrate 22 is lowered. A lifter pin is used as an example of the substrate holding pin 74a and the substrate holding pin 74b.
As shown in FIGS. 4 and 5, the protrusions 72 provided on the finger 66 are provided on the outer circumferences of the substrate platform 44a and the substrate platform 44b. Three grooves 76 in the vertical direction (vertical direction) are provided so as to be movable from above to below with respect to the upper surface.
（２）ランプハウス（加熱装置）の構成
　続いて、本実施形態に係る加熱装置としての基板載置部４４ａの上面（基板表面と対向する面）に設けられたランプハウス５２ａ，基板載置部４４ｂの上面（基板表面と対向する面）に設けられたランプハウス５２ｂの構成について図７及び図８を用いて説明する。
　図７は、ランプハウス５２および基板載置台４４を側面から見た図である。図８はランプハウス５２を上面から見た図である。 (2) Configuration of Lamp House (Heating Device) Subsequently, the lamp house 52a provided on the upper surface (surface facing the substrate surface) of the substrate platform 44a as the heating device according to the present embodiment, the substrate platform. The configuration of the lamp house 52b provided on the upper surface 44b (the surface facing the substrate surface) will be described with reference to FIGS.
FIG. 7 is a view of the lamp house 52 and the substrate mounting table 44 as viewed from the side. FIG. 8 is a view of the lamp house 52 as viewed from above.
　加熱装置としてのランプハウス５２ａ，ランプハウス５２ｂは、複数のハロゲンランプ８０１、それぞれのランプに対応したソケット８０６、ランプを配置するランプ配置部としてのランプベース８０２、窓８０４、側壁８１０で主に構成される。ハロゲンランプ８０１は、波長が０．２μmから１０μm、より良くは０．３μmから３μmである電磁波が用いられる。
　ランプハウス５２ａ、ランプハウス５２ｂは同一の構成であるため、ここではランプハウス５２として説明する。 The lamp house 52a and lamp house 52b as heating devices are mainly composed of a plurality of halogen lamps 801, sockets 806 corresponding to the respective lamps, a lamp base 802 as a lamp arrangement portion for arranging the lamps, a window 804, and a side wall 810. Is done. The halogen lamp 801 uses an electromagnetic wave having a wavelength of 0.2 μm to 10 μm, and more preferably 0.3 μm to 3 μm.
Since the lamp house 52a and the lamp house 52b have the same configuration, the lamp house 52 will be described here.
　ランプ８０１はソケット８０６に電気的に接続されている。ソケット８０６はブロック８０７で覆われ、そのブロック８０７はランプベース８０２に上方から埋め込まれている。言い換えれば、ブロック８０７は、ランプベース８０２に、基板を処理する処理空間５０と異なる方向から嵌め込まれ、固定されている。ブロック８０７は熱伝導率の高い材質であってランプ８０１から照射される光を減衰させる、もしくは遮断するような材質、例えばアルミで構成されている。 The lamp 801 is electrically connected to the socket 806. The socket 806 is covered with a block 807, and the block 807 is embedded in the lamp base 802 from above. In other words, the block 807 is fitted and fixed to the lamp base 802 from a direction different from the processing space 50 for processing the substrate. The block 807 is made of a material having high thermal conductivity, such as aluminum, that attenuates or blocks light emitted from the lamp 801.
　ランプベース８０２は側壁８１０によって支持されている。ランプベース８０２と処理空間の間には、処理空間の雰囲気とランプ８０１が配設される空間の雰囲気を隔てる窓８０４が設けられる。窓８０４は、Ｏリング８０８を介して側壁８１０に固定されている。窓８０４は、ランプ８０１から照射される光のレベルを減衰させない材質が良く、例えば石英で構成されている。 The lamp base 802 is supported by the side wall 810. A window 804 is provided between the lamp base 802 and the processing space to separate the atmosphere of the processing space from the atmosphere of the space where the lamp 801 is disposed. The window 804 is fixed to the side wall 810 via an O-ring 808. The window 804 is preferably made of a material that does not attenuate the level of light emitted from the lamp 801, and is made of, for example, quartz.
　ランプベース８０２には、冷媒が流れる冷却流路８０３が設けられている。さらに、冷却流路８０３を塞ぐための蓋８１１が設けられ、冷媒が漏れないような構成としている。冷却流路８０３には冷媒供給管８０５が接続され、図示しない冷媒源から流れてくる冷媒を冷却流路８０３へ供給している。 The lamp base 802 is provided with a cooling channel 803 through which a refrigerant flows. Further, a lid 811 for closing the cooling flow path 803 is provided so that the refrigerant does not leak. A coolant supply pipe 805 is connected to the cooling channel 803, and the coolant flowing from a coolant source (not shown) is supplied to the cooling channel 803.
　ランプ８０１は、図８に示すようにランプベース８０２に円周状に配設されている。各ランプ８０１は、それぞれ独立して制御できるよう、ランプ電源コントローラ９０２に接続されている。ランプ８０１はグループごとに管理されている。例えば、８０１Ａ、８０１Ｄ、８０１Ｇ、８０１Ｊは第一グループ、８０１Ｂ、８０１Ｅ、８０１Ｈ、８０１Ｋは第二グループ、８０１Ｃ、８０１Ｆ、８０１Ｉ、８０１Ｌは第三グループとする。
　各グループのランプは隣り合うよう構成されており、グループごとに照度を調整することで、基板に照射される照度量を調整するようにしている。各グループ間で照度量を調整することで、基板を均一に加熱することができる。 The lamp 801 is arranged on the lamp base 802 in a circumferential shape as shown in FIG. Each lamp 801 is connected to a lamp power controller 902 so that it can be controlled independently. The lamp 801 is managed for each group. For example, 801A, 801D, 801G, and 801J are the first group, 801B, 801E, 801H, and 801K are the second group, and 801C, 801F, 801I, and 801L are the third group.
The lamps of each group are configured to be adjacent to each other, and the illuminance amount irradiated to the substrate is adjusted by adjusting the illuminance for each group. By adjusting the amount of illuminance between the groups, the substrate can be heated uniformly.
　ランプが設置された周の直径は、基板を均一に照射するという観点から、処理基板直径＞ランプ設置の直径＞処理基板半径の関係とすることが望ましい。 The diameter of the circumference where the lamp is installed is preferably in the relationship of processing substrate diameter> diameter of lamp installation> processing substrate radius from the viewpoint of uniformly irradiating the substrate.
（３）コントローラ（制御部）の構成
　次に、図９を用いて、本発明の一実施形態に係る基板処理装置１０を制御する制御手段としての制御部９６を説明する。図９は、図１の基板処理装置１０を制御する制御部９６の概略構成の一例を示すブロック図である。 (3) Configuration of Controller (Control Unit) Next, a control unit 96 as a control unit that controls the substrate processing apparatus 10 according to an embodiment of the present invention will be described with reference to FIG. FIG. 9 is a block diagram illustrating an example of a schematic configuration of the control unit 96 that controls the substrate processing apparatus 10 of FIG. 1.
　制御部９６は、処理室コントローラ９８、搬送コントローラ１００、ロボットコントローラ１０２、操作部コントローラ１０４、ランプ電源コントローラ９０２がＬＡＮ等の通信ネットワーク１０６を通じてスイッチングハブ（ＳＷ　Ｈｕｂ）１０８を介して相互に接続されるように設けられる。また、スイッチングハブ（ＳＷ　Ｈｕｂ）１０８は上位コントローラとして図示しない顧客のホストコンピュータ（Ｈｏｓｔ）に接続される。コントローラ９８は記憶部１２３を有し、本装置を動作させるためのプログラムやレシピが記憶されている。各構成は、プログラムやレシピに応じて制御される。記憶部１２３は記録媒体であり、例えばハードディスク、メモリ等で構成される。 In the control unit 96, the processing chamber controller 98, the transfer controller 100, the robot controller 102, the operation unit controller 104, and the lamp power controller 902 are connected to each other via a switching hub (SW Hub) 108 through a communication network 106 such as a LAN. It is provided as follows. The switching hub (SW Hub) 108 is connected as a host controller to a customer host computer (Host) (not shown). The controller 98 has a storage unit 123, and stores programs and recipes for operating the apparatus. Each configuration is controlled according to a program and a recipe. The storage unit 123 is a recording medium, and includes, for example, a hard disk, a memory, and the like.
　ロボットコントローラ１０２は、図１の真空ロボット３６及び大気ロボット（不図示）を制御する。
　操作部コントローラ１０４は、操作員とのインタフェースであり、ディスプレイなどの表示装置１１０及びキーボードなどの入力装置（不図示）などを備える。
　処理室コントローラ９８、搬送コントローラ１００には、デジタル信号回線１１２を通じて、シーケンサ１１４を介し、処理ガスの供給や排気用バルブのオン／オフを制御するバルブデジタルＩ／Ｏ１１６や、基板保持ピン７４の昇降を制御する等各種スイッチ（ＳＷ）等のオン／オフを制御するＳＷデジタルＩ／Ｏ１１８などが接続される。 The robot controller 102 controls the vacuum robot 36 and the atmospheric robot (not shown) in FIG.
The operation unit controller 104 is an interface with an operator, and includes a display device 110 such as a display and an input device (not shown) such as a keyboard.
The processing chamber controller 98 and the transport controller 100 are connected to a digital signal line 112 and a sequencer 114 through a sequencer 114, and a valve digital I / O 116 for controlling on / off of a processing gas supply and an exhaust valve and a substrate holding pin 74 ascending and descending. SW digital I / O 118 for controlling on / off of various switches (SW) and the like for controlling are connected.
　また、処理室コントローラ９８には、例えばシリアル回線１２０を通じて、処理空間５０内の圧力を制御するオートプレッシャコントローラ（ＡＰＣ）等の圧力コントローラ１２２が接続される。処理室コントローラ９８は、例えば操作部コントローラ１０４を介して操作員によって指定されたプロセスレシピに基づいて、基板を処理する際の制御データ（制御指示）を、圧力コントローラ１２２、処理ガスの供給・排気用バルブ、各種スイッチ、マスフローコントローラ及び温度調整器等に対して出力し、処理空間５０内における基板処理を制御する。 Further, a pressure controller 122 such as an auto pressure controller (APC) for controlling the pressure in the processing space 50 is connected to the processing chamber controller 98 through a serial line 120, for example. The processing chamber controller 98 supplies control data (control instructions) for processing a substrate based on a process recipe designated by an operator via the operation unit controller 104, for example, pressure controller 122, supply / exhaust of processing gas. Output to a control valve, various switches, a mass flow controller, a temperature controller, and the like to control substrate processing in the processing space 50.
　また、搬送コントローラ１００は、例えば操作部コントローラ１０４を介して操作員によって指定されたシーケンスレシピに基づいて、基板を搬送する際の制御データ（制御指示）を、真空ロボット３６、大気ロボット（不図示）、ロボットアーム６４、軸部６８、基板保持ピン７４等、各種バルブ及びスイッチ等に対して出力し、基板処理装置１０内における基板の搬送を制御する。 Also, the transfer controller 100 sends control data (control instructions) for transferring a substrate based on a sequence recipe specified by an operator via the operation unit controller 104, for example, to a vacuum robot 36, an atmospheric robot (not shown). ), Outputs to the robot arm 64, the shaft portion 68, the substrate holding pin 74, etc., various valves and switches, etc., and controls the transport of the substrate in the substrate processing apparatus 10.
　また、ランプ電源コントローラ９０２には、デジタル信号回線１１２を通じて、シーケンサ１１４を介し、各ランプ電源のスイッチ（ＳＷ）等のオン／オフを制御するＳＷデジタルＩ／Ｏ１１８などが接続され、各ランプの起動、加熱、停止を制御する。 Further, the lamp power controller 902 is connected to a SW digital I / O 118 for controlling on / off of each lamp power switch (SW) through the digital signal line 112 and the sequencer 114 to start each lamp. Control heating, stopping.
　本発明の基板処理工程について、図１０乃至図１４に基づいて説明する。
　本発明の基板処理工程は半導体装置を製造する一工程であり、例えばデバイス上の配線間を絶縁するための層間絶縁膜に対して不純物を除去する工程である。図１０は、基板処理装置の動作を示すフローチャートである。また、図１１（ａ）から（ｄ）、図１２(ｅ)から（ｈ）及び図１３（ｉ）から（ｋ）の上図は処理室１６の上面図である。下図は上図の断面をイメージした図で、説明用図面である。また、図１４は基板２２の高さとランプ電源のＯＮ／ＯＦＦの関係を示す図である。
尚、以下の説明において、基板処理装置１０を構成する各部の動作は制御部９６により制御される。 The substrate processing process of the present invention will be described with reference to FIGS.
The substrate processing step of the present invention is a step of manufacturing a semiconductor device, for example, a step of removing impurities from an interlayer insulating film for insulating between wirings on a device. FIG. 10 is a flowchart showing the operation of the substrate processing apparatus. 11A to 11D, 12E to 12H, and 13I to 13K are top views of the processing chamber 16. FIG. The lower figure is an image of the cross section of the upper figure and is an explanatory drawing. FIG. 14 is a diagram showing the relationship between the height of the substrate 22 and ON / OFF of the lamp power supply.
In the following description, the operation of each unit constituting the substrate processing apparatus 10 is controlled by the control unit 96.
まず、本基板処理工程で処理される基板について説明する。
基板には、金属材料で形成される配線が形成されており、その配線間には、電気的容量を低減するための絶縁膜が形成されている。近年の回路の微細化/高集積化に伴って配線間の距離が短くなっているため、絶縁膜は配線間をより確実に絶縁することが求められている。 First, the substrate processed in this substrate processing step will be described.
Wirings made of a metal material are formed on the substrate, and an insulating film for reducing electric capacity is formed between the wirings. With the recent miniaturization / high integration of circuits, the distance between wirings has been shortened, so that the insulating film is required to insulate the wirings more reliably.
絶縁膜は例えば有機ポリマーや有機シリカガラスのような低誘電率材料で構成される。低誘電率絶縁膜（Ｌｏｗ－Ｋ絶縁膜）は、例えばパッシベーション膜に含まれるシリコン酸化膜（例えばＴＥＯＳ（Ｔｅｔｒａｅｔｈｏｘｙｓｉｌａｎｅ）酸化膜）の誘電率よりも低い誘電率を有する。一般的にＴＥＯＳ酸化膜の比誘電率εは、ε＝４．１から１．２程度である。 The insulating film is made of a low dielectric constant material such as organic polymer or organic silica glass. The low dielectric constant insulating film (Low-K insulating film) has a dielectric constant lower than the dielectric constant of, for example, a silicon oxide film (for example, TEOS (Tetraoxysilane) oxide film) included in the passivation film. In general, the relative dielectric constant ε of the TEOS oxide film is about ε = 4.1 to 1.2.
　前述の有機ポリマーや有機シリカガラスは様々な方法で形成されるが、有機シリカガラスの場合、トリメチルシラン（ＳｉＨ（ＣＨ３）３）と酸素との混合ガスを用いたＣＶＤ法により形成される。このように形成すると、膜中にＯＨ成分が混入（含有）されるため誘電率が高くなってしまう。そこで、以下に説明する基板処理工程では、有機シリカガラスからＯＨ成分を脱離させ、より低い誘電率の膜に改質させる。 The above-mentioned organic polymer and organic silica glass are formed by various methods. In the case of organic silica glass, it is formed by a CVD method using a mixed gas of trimethylsilane (SiH (CH3) 3) and oxygen. When formed in this manner, the dielectric constant increases because the OH component is mixed (contained) in the film. Therefore, in the substrate processing step described below, the OH component is desorbed from the organic silica glass and modified to a film having a lower dielectric constant.
＜ステップＳ１０１　基板搬入工程＞
　ゲートバルブ３５が開き、基板載置部４４ａの基板保持ピン７４ａと基板載置部４４ｂの基板保持ピン７４ｂが上昇する。ロボットアーム６４は基板載置部４４ｂ側に待機し、基板保持ピン７４ａ、基板保持ピン７４ｂと共に上昇する（図１１（ａ））。 <Step S101 Substrate Loading Step>
The gate valve 35 is opened, and the substrate holding pin 74a of the substrate platform 44a and the substrate holding pin 74b of the substrate platform 44b are raised. The robot arm 64 stands by on the substrate mounting portion 44b side and ascends together with the substrate holding pins 74a and the substrate holding pins 74b (FIG. 11A).
　次に、ロボットアーム６４は、軸部６８が回転することで略水平に基板載置部４４ａ側へ移動する。この際、ロボットアーム６４のフィンガ６６は、ゲートバルブ３５と向かい合っている（図１１（ｂ））。 Next, the robot arm 64 moves to the substrate mounting portion 44a side substantially horizontally as the shaft portion 68 rotates. At this time, the finger 66 of the robot arm 64 faces the gate valve 35 (FIG. 11B).
　次に、真空ロボット３６が上フィンガ３８ａと下フィンガ３８ｂに載置された２枚の基板２２を同時搬送しながら、搬送室１２からゲートバルブ３５を介して処理室１６に移動し、基板載置部４４ａ上方にて停止する。その際、ロボットアーム６４はフィンガ対４０の上フィンガ３８ａと下フィンガ３８ｂの間に収まる高さ位置にて待機する（図１１（ｃ））。 Next, the vacuum robot 36 moves from the transfer chamber 12 to the processing chamber 16 via the gate valve 35 while simultaneously transferring the two substrates 22 placed on the upper finger 38a and the lower finger 38b, and places the substrate thereon. Stops above the portion 44a. At that time, the robot arm 64 stands by at a height position that fits between the upper finger 38a and the lower finger 38b of the finger pair 40 (FIG. 11 (c)).
＜ステップＳ１０２　基板移載工程＞
　真空ロボット３６はそのまま動作しない状態にて、基板載置部４４ａの基板保持ピン７４ａが上昇し、下フィンガ３８ｂに載置された基板２２を基板保持ピン７４ａ上に載置する。さらに、ロボットアーム６４が上昇することで、上フィンガ３８ａに載置された基板２２をロボットアーム６４の突起部７２上に載置する（図１１（ｄ））。すなわち、基板２２を基板載置部４４ａ上で保持した状態とする。 <Step S102 Substrate Transfer Process>
In a state where the vacuum robot 36 does not operate as it is, the substrate holding pins 74a of the substrate platform 44a are raised, and the substrate 22 placed on the lower finger 38b is placed on the substrate holding pins 74a. Further, when the robot arm 64 is raised, the substrate 22 placed on the upper finger 38a is placed on the protrusion 72 of the robot arm 64 (FIG. 11D). That is, the substrate 22 is held on the substrate platform 44a.
　次に、真空ロボット３６は、搬送室１２内に戻る。このとき、基板保持ピン７４ａに１枚の基板２２が支持され、さらに上方でロボットアーム６４によってもう１枚の基板２２が支持されている（図１２（ｅ））。 Next, the vacuum robot 36 returns into the transfer chamber 12. At this time, one substrate 22 is supported by the substrate holding pins 74a, and another substrate 22 is supported by the robot arm 64 further upward (FIG. 12E).
　次に、ロボットアーム６４は、基板２２を支持した状態で、軸部６８が回転することで略水平に第２の処理部４３ｂ側であって基板載置部４４ｂの上方へ移動する。すなわち、基板２２は基板載置部４４ｂの上方で保持される。
　ゲートバルブ３５が閉まる（図１２（ｆ））。 Next, the robot arm 64 moves on the second processing unit 43b side and above the substrate mounting unit 44b substantially horizontally as the shaft unit 68 rotates while supporting the substrate 22. That is, the substrate 22 is held above the substrate platform 44b.
The gate valve 35 is closed (FIG. 12 (f)).
＜ステップＳ１０３　基板載置工程＞
　軸部６８が下降して、ロボットアーム６４は、基板載置部４４ｂの外周下方に移動する。そして、基板２２が基板保持ピン７４ｂに支持される（図１２（ｇ））。 <Step S103 Substrate Placement Step>
The shaft portion 68 is lowered, and the robot arm 64 is moved below the outer periphery of the substrate platform 44b. Then, the substrate 22 is supported by the substrate holding pins 74b (FIG. 12 (g)).
　基板載置部４４ａの基板保持ピン７４ａ及び基板載置部４４ｂの基板保持ピン７４ｂが基板２２、基板２２を略水平に支持した状態でほぼ同時に下降する。即ち、それぞれの基板と、それらの基板に対応した基板載置台との距離が互いに等しくなるよう、基板２２，基板２２を下降させ、基板２２、基板２２を基板載置部４４ａ及び基板載置部４４ｂにそれぞれ載置する（図１２（ｈ））。基板載置部４４ａ、基板載置部４４ｂに内包されたヒータ４５ａ、ヒータ４５ｂは加熱された状態であるため、基板２２、基板２２は同じ昇温レートを維持することができる。 The substrate holding pins 74a of the substrate platform 44a and the substrate holding pins 74b of the substrate platform 44b descend almost simultaneously while supporting the substrates 22 and 22 substantially horizontally. That is, the substrate 22 and the substrate 22 are lowered so that the distance between each substrate and the substrate mounting table corresponding to each substrate becomes equal, and the substrate 22 and the substrate 22 are moved to the substrate mounting portion 44a and the substrate mounting portion. 44b (FIG. 12 (h)). Since the heater 45a and the heater 45b included in the substrate platform 44a and the substrate platform 44b are in a heated state, the substrate 22 and the substrate 22 can maintain the same temperature increase rate.
　このとき、図１４に示されるように、ランプハウス５２ａ、ランプハウス５２ｂのランプ電源を同時にＯＮとしてランプ８０１を起動し、基板２２、基板２２への照射が開始される。ここでは、各ハロゲンランプ８０１から照射される電磁波の波長が一定となるよう制御される。この波長は、後述する膜処理に影響の無い範囲であれば誤差があってもよい。 At this time, as shown in FIG. 14, the lamp power supply of the lamp house 52a and the lamp house 52b is simultaneously turned on to start the lamp 801, and irradiation to the substrate 22 and the substrate 22 is started. Here, the wavelength of the electromagnetic wave emitted from each halogen lamp 801 is controlled to be constant. This wavelength may have an error as long as it does not affect the film processing described later.
ランプ電源をＯＮとするタイミングは軸部６８の下降開始と同時にＯＮとするか、もしくは基板載置部に基板を載置した後に同時にＯＮとするかが好ましい。なお、ここで使用している「同時」とは、ハロゲンランプ８０１から照射される電磁波が、それぞれの基板２２、基板２２の表面に同時に到達するよう制御することを含む。尚、それぞれの基板２２に形成された低誘電率膜の電磁波吸収量の差が所望の範囲内であれば、各動作に誤差があっても良い。このように同時にＯＮすることで、基板２２のハロゲンランプ８０１から照射される電磁波の照射状況を同じにすることができる。更には、昇温レートを上昇させることができると共に、温度面内均一性を向上させることができる。 It is preferable that the lamp power supply is turned on at the same time as the lowering of the shaft portion 68 is started, or at the same time after the substrate is placed on the substrate placing portion. As used herein, “simultaneous” includes controlling the electromagnetic waves irradiated from the halogen lamp 801 to reach the respective substrates 22 and 22 at the same time. Note that there may be an error in each operation as long as the difference in electromagnetic wave absorption between the low dielectric constant films formed on the respective substrates 22 is within a desired range. By simultaneously turning on in this way, it is possible to make the irradiation state of the electromagnetic wave irradiated from the halogen lamp 801 of the substrate 22 the same. Furthermore, it is possible to increase the rate of temperature rise and improve the in-plane temperature uniformity.
　ハロゲンランプ８０１から発生した電磁波は、金属で形成される膜（例えば配線）には吸収されずに、低誘電率膜（例えば絶縁膜）で吸収される性質の波長である。そのため、本工程では、配線を加熱せずに低誘電率膜を選択的に加熱できる。 The electromagnetic wave generated from the halogen lamp 801 has a wavelength that is absorbed by a low dielectric constant film (for example, an insulating film) without being absorbed by a film (for example, a wiring) formed of metal. Therefore, in this step, the low dielectric constant film can be selectively heated without heating the wiring.
＜ステップＳ１０４　ガス供給工程＞
　ガス供給機構５１ａ、ガス供給機構５１ｂから、窒素（Ｎ2）ガスおよび水素（Ｈ２）ガスが処理空間５０内に供給され、排気口６２から処理室１６ａ外へ排気される。供給された窒素（Ｎ2）ガスおよび水素（Ｈ２）ガスは、加熱された低誘電率膜内に含まれるＯＨ成分と反応し、低誘電率膜からＯＨ成分を脱離させる。低誘電率膜からＯＨ成分を脱離させることで、より低誘電率とすることが可能となる。更には、低誘電率を低くすることができるので、基板に形成された配線間をより確実に絶縁することができる。 <Step S104 Gas Supply Process>
Nitrogen (N 2 ) gas and hydrogen (H 2 ) gas are supplied into the processing space 50 from the gas supply mechanism 51a and the gas supply mechanism 51b, and are exhausted from the exhaust port 62 to the outside of the processing chamber 16a. The supplied nitrogen (N 2 ) gas and hydrogen (H 2 ) gas react with the OH component contained in the heated low dielectric constant film and desorb the OH component from the low dielectric constant film. By desorbing the OH component from the low dielectric constant film, a lower dielectric constant can be achieved. Furthermore, since the low dielectric constant can be lowered, the wirings formed on the substrate can be more reliably insulated.
＜ステップＳ１０５＞
　所定の時間が経過したか否か判断される。経過したと判断された場合は、次のステップＳ１０６へ進む。所定の時間が経過していないと判断された場合は、ステップＳ１０４へ戻り、窒素（Ｎ2）ガスおよび水素（Ｈ２）ガスの供給が継続される。 <Step S105>
It is determined whether a predetermined time has elapsed. If it is determined that the time has elapsed, the process proceeds to the next step S106. If it is determined that the predetermined time has not elapsed, the process returns to step S104, and the supply of nitrogen (N 2 ) gas and hydrogen (H 2 ) gas is continued.
＜ステップＳ１０６　ガス供給停止＞
　所定の時間が経過した後、窒素ガスおよび水素ガスの供給を停止する。
　供給を停止した後、基板保持ピン７４ａと基板保持ピン７４ｂを上昇させ、基板２２、基板２２を上昇させる。このとき、図１４に示されるように、ランプハウス５２ａ、ランプハウス５２ｂのランプ電源を同時にＯＦＦし、ランプ８０１の照射を停止する（図２１１３（ｉ））。ランプ電源をＯＦＦとするタイミングは、ハロゲンランプ８０１から照射される電磁波が、それぞれの基板２２、基板２２の表面に同時に届かなくなるよう制御することを言う。尚、それぞれの基板２２に形成された低誘電率膜の電磁波吸収量の差が所望の範囲内であれば、各動作に誤差があっても良い。これにより、基板２２のハロゲンランプ８０１から照射される電磁波の照射状況を同じにすることができる。 <Step S106 Gas supply stop>
After a predetermined time has elapsed, the supply of nitrogen gas and hydrogen gas is stopped.
After the supply is stopped, the substrate holding pins 74a and the substrate holding pins 74b are raised, and the substrate 22 and the substrate 22 are raised. At this time, as shown in FIG. 14, the lamp power supplies of the lamp house 52a and the lamp house 52b are simultaneously turned off, and the irradiation of the lamp 801 is stopped (FIG. 2113 (i)). The timing at which the lamp power is turned off refers to control so that the electromagnetic waves emitted from the halogen lamp 801 do not reach the respective substrates 22 and 22 at the same time. Note that there may be an error in each operation as long as the difference in electromagnetic wave absorption between the low dielectric constant films formed on the respective substrates 22 is within a desired range. Thereby, the irradiation state of the electromagnetic wave irradiated from the halogen lamp 801 of the board | substrate 22 can be made the same.
また、基板保持ピン７４ａ、基板保持ピン７４ｂの上昇開始と同時や、基板保持ピン７４ａ、基板保持ピン７４ｂが所定の位置に上昇した後が好ましいが、加熱温度に影響しない程度の誤差があってもよい。ランプ電源を同時にＯＦＦすることで、基板載置部４４ａに載置された基板２２と基板載置部４４ｂに載置された基板２２の加熱状況を同じにでき、降温レートを向上させることができる。 Further, it is preferable that the substrate holding pin 74a and the substrate holding pin 74b are raised at the same time or after the substrate holding pin 74a and the substrate holding pin 74b are raised to predetermined positions, but there is an error that does not affect the heating temperature. Also good. By simultaneously turning off the lamp power supply, the heating state of the substrate 22 placed on the substrate platform 44a and the substrate 22 placed on the substrate platform 44b can be made the same, and the temperature drop rate can be improved. .
＜ステップＳ１０７　基板移載工程＞
　ロボットアーム６４の軸部６８が上昇し、基板載置部４４ｂ上方でロボットアーム６４の突起部７２上に基板２２が支持される。ロボットアーム６４は、基板２２を載置した状態で、軸部６８が回転することで略水平に第１の処理部４３ａ側である基板載置部４４ａ上方へ移動する（図１３（ｊ））。 <Step S107 Substrate Transfer Process>
The shaft portion 68 of the robot arm 64 is raised, and the substrate 22 is supported on the protrusion 72 of the robot arm 64 above the substrate placement portion 44b. When the substrate 22 is placed, the robot arm 64 moves substantially horizontally above the substrate placing portion 44a on the first processing portion 43a side by rotating the shaft portion 68 (FIG. 13 (j)). .
＜ステップＳ１０８　基板搬出工程＞
　そして、空の真空ロボット３６が、搬送室１２からゲートバルブ３５を介して処理室１６に移動し、搬入と逆の手順により処理済みの基板２２、基板２２が処理室１６から搬出される（図１３（ｋ））。 <Step S108 Substrate Unloading Process>
Then, the empty vacuum robot 36 moves from the transfer chamber 12 to the processing chamber 16 via the gate valve 35, and the processed substrate 22 and the substrate 22 are unloaded from the processing chamber 16 by the reverse procedure of loading (see FIG. 13 (k)).
　すなわち、本実施形態に係る基板処理工程では、図１４に示されるように、基板２２を処理室１６へ搬入後、１枚は基板保持ピン７４ａに移載されてから、基板保持ピン７４ａの下降により基板載置部４４ａに載置され、他方の基板はロボットアーム６４の回転及び基板保持ピン７４ｂの下降により基板載置部４４ｂに載置されるが、この基板２２の下降と略同時にランプ電源がＯＮとされ、ランプ８０１は点灯される。また、基板処理後に基板載置台４４に載置された２枚の基板２２，基板２２は基板保持ピン７４ａ、基板保持ピン７４ｂに支持された状態で上昇し、この上昇と略同時にランプ電源がＯＦＦとされ、ランプ８０１は消灯される。これにより、基板の加熱状況を同じにすることができる。 That is, in the substrate processing step according to the present embodiment, as shown in FIG. 14, after the substrate 22 is carried into the processing chamber 16, one substrate is transferred to the substrate holding pin 74a, and then the substrate holding pin 74a is lowered. The other substrate is placed on the substrate placing portion 44b by the rotation of the robot arm 64 and the lowering of the substrate holding pin 74b. The lamp power supply is substantially simultaneously with the lowering of the substrate 22. Is turned on, and the lamp 801 is turned on. Further, after the substrate processing, the two substrates 22 and 22 placed on the substrate mounting table 44 rise while being supported by the substrate holding pins 74a and 74b, and the lamp power is turned off almost simultaneously with this rise. The lamp 801 is turned off. Thereby, the heating condition of a board | substrate can be made the same.
　なお、本発明は上記の実施形態に限定されない。
　本実施例では、ガスとして窒素ガスおよび水素ガス不活性ガスを用いたが、それに限るものではなく、処理するプロセスに応じてガス種類を変更しても良い。
　例えば、ＣＶＤ（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）法やＡＬＤ（Ａｔｏｍｉｃ　Ｌａｙｅｒ　Ｄｅｐｏｓｉｔｉｏｎ）法などにおいて膜を形成する際、その膜に応じたガスを供給しても良い。
　また、上記実施形態では窒素ガスおよび水素ガスを用いたが、窒素成分及び水素成分を少なくとも有する混合ガスであっても良い。 In addition, this invention is not limited to said embodiment.
In this embodiment, nitrogen gas and hydrogen gas inert gas are used as the gas. However, the present invention is not limited to this, and the gas type may be changed according to the process to be processed.
For example, when a film is formed by a CVD (Chemical Vapor Deposition) method or an ALD (Atomic Layer Deposition) method, a gas corresponding to the film may be supplied.
Moreover, although nitrogen gas and hydrogen gas were used in the said embodiment, the mixed gas which has a nitrogen component and a hydrogen component at least may be sufficient.
　また、本発明においては、低誘電体で形成される層間絶縁膜を有する処理対象物を基板と表現したが、層間絶縁膜を有するものであれば良く、例えば半導体チップも含む。 In the present invention, the object to be processed having an interlayer insulating film formed of a low dielectric material is expressed as a substrate. However, any substrate having an interlayer insulating film may be used, and includes, for example, a semiconductor chip.
＜本発明の好ましい態様＞
　以下、本発明の好ましい態様について付記する。
（付記１）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記第１の基板保持ピンに第１の基板が支持され、更に第２の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと前記第２のランプを起動するよう制御する制御部と、を有する基板処理装置。 <Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.
(Additional remark 1) It arrange | positions in the said process chamber, the process chamber which processes the board | substrate conveyed from the said transfer chamber, the 1st board | substrate conveyance member which conveys a board | substrate from the said transfer chamber to the said process chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, The first substrate is supported by the first substrate holding pins, and the second substrate is further moved forward above the second substrate mounting table. A control unit for controlling to start the first ramp and the second ramp while being supported by the second substrate transport member, a substrate processing apparatus having a.
（付記２）前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する付記１記載の基板処理装置。 (Supplementary note 2) The substrate processing apparatus according to supplementary note 1, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after the first lamp and the second lamp are activated.
（付記３）前記基板はＯＨ成分を含有する膜を有する基板であって、前記第１のランプ及び前記第２のランプから照射される電磁波の波長は前記ＯＨ成分を有する膜に吸収される波長である付記２に記載の基板処理装置。 (Additional remark 3) The said board | substrate is a board | substrate which has a film | membrane containing an OH component, Comprising: The wavelength of the electromagnetic waves irradiated from the said 1st lamp | ramp and the said 2nd lamp | ramp is a wavelength absorbed by the film | membrane which has the said OH component. The substrate processing apparatus according to Supplementary Note 2, wherein
（付記４）前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する付記３記載の基板処理装置。 (Additional remark 4) The substrate processing apparatus of Additional remark 3 which light-extinguishes a said 1st lamp | ramp and a 2nd lamp | ramp simultaneously with the raise of the board | substrate mounted in the said substrate mounting base.
（付記５）前記制御部は、前記第１の基板保持ピンに第１の基板が支持され、更に第２の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で、前記第１のランプから前記第１の基板に電磁波が照射され、前記第２のランプから前記第２の基板に電磁波が照射され、所定の時間経過後、前記第１のランプ及び前記第２のランプの電磁波照射を停止するよう制御する付記１に記載の基板処理装置。 (Supplementary Note 5) In the control unit, the first substrate is supported by the first substrate holding pin, and the second substrate is supported by the second substrate transport member above the second substrate mounting table. In this state, electromagnetic waves are applied to the first substrate from the first lamp, and electromagnetic waves are applied to the second substrate from the second lamp. After a predetermined time has elapsed, the first lamp and The substrate processing apparatus according to appendix 1, wherein the second lamp is controlled to stop electromagnetic wave irradiation.
（付記６）前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する付記５記載の基板処理装置。 (Supplementary note 6) The substrate processing apparatus according to supplementary note 5, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after the first lamp and the second lamp are activated.
（付記７）前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する付記６記載の基板処理装置。 (Supplementary note 7) The substrate processing apparatus according to supplementary note 6, wherein the first lamp and the second lamp are turned off simultaneously with the rise of the substrate placed on the substrate placement table.
（付記８）前記基板はＯＨ成分を含有する膜を有する基板であって、前記第１のランプ及び前記第２のランプから照射される電磁波の波長は前記ＯＨ成分を有する膜に吸収される波長である請求項７に記載の基板処理装置。 (Additional remark 8) The said board | substrate is a board | substrate which has a film | membrane containing OH component, Comprising: The wavelength of the electromagnetic waves irradiated from the said 1st lamp | ramp and the said 2nd lamp | ramp is a wavelength absorbed by the film | membrane which has the said OH component. The substrate processing apparatus according to claim 7.
（付記９）前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する付記８記載の基板処理装置。 (Supplementary note 9) The substrate processing apparatus according to supplementary note 8, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after starting the first lamp and the second lamp.
（付記１０）前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する付記９記載の基板処理装置。 (Additional remark 10) The substrate processing apparatus of Additional remark 9 which light-extinguishes said 1st lamp | ramp and a 2nd lamp | ramp simultaneously with the raise of the board | substrate mounted in the said substrate mounting base.
（付記１１）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記第１の基板載置台に第１の基板が載置され、更に前記第２の基板載置台に第２の基板が載置され、前記第１の基板と前記第２の基板を上昇させる際、前記第１のランプと第２のランプを起動するよう制御する制御部と、を有する基板処理装置。 (Supplementary Note 11) A transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A first substrate is placed on the first substrate platform, and a second substrate is placed on the second substrate platform. When increasing the first substrate and the second substrate, the substrate processing apparatus and a control section for controlling to start the first ramp and the second ramp.
（付記１２）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた半導体装置の製造方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の基板搬送部材が前記第２の基板載置台の上方で前記他方の基板を支持する工程と、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと第２のランプを起動する工程とを有する半導体装置の製造方法。 (Additional remark 12) It arrange | positions in the said process chamber, the process chamber which processes the board | substrate conveyed from the said transfer chamber, the 1st board | substrate conveyance member which conveys a board | substrate from the said transfer chamber to the said process chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table. A method for manufacturing a semiconductor device.
（付記１３）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部は前記処理室に配置され、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた基板処理方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の搬送部材が前記第２の基板載置台の上方で前記他方の基板を支持する工程と、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと第２のランプを起動する工程とを有する基板処理方法。 (Additional remark 13) It arrange | positions in the said process chamber, the process chamber which processes the board | substrate conveyed from the said transfer chamber, the 1st board | substrate conveyance member which conveys a board | substrate from the said transfer chamber to the said process chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, the first processing unit and the second processing unit are disposed in the processing chamber, and the first processing unit and the second processing unit A second substrate transport member that transports the substrate between the second processing units, a control unit that controls each of the components, A substrate processing method using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one of the transferred substrates as the substrate Placing the second substrate on the first substrate holding pin, and further transferring the other substrate to the second substrate transport member; and the second transport member above the second substrate platform and the other substrate A step of supporting the substrate, the at least one substrate is supported by the first substrate holding pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table. A substrate processing method comprising a step of starting the first lamp and the second lamp in a closed state.
（付記１４）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部は前記処理室に配置され、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた半導体装置の製造方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記基板保持ピン及び前記第２の基板搬送部材が前記第２の基板載置台に基板を載置する基板載置工程と、前記基板載置台に基板が載置された状態で前記第１のランプと前記第２のランプが基板を加熱する加熱工程と、前記加熱工程の後、前記第１の基板保持ピンに前記少なくとも１枚の基板を支持し、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態となる前に、前記第１のランプと前記第２のランプを起動する工程とを有する半導体装置の製造方法。 (Additional remark 14) It arrange | positions in the said process chamber, the process chamber which processes the board | substrate conveyed from the said transfer chamber, the 1st board | substrate conveyance member which conveys a board | substrate from the said transfer chamber to the said process chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, the first processing unit and the second processing unit are disposed in the processing chamber, and the first processing unit and the second processing unit A second substrate transport member that transports the substrate between the second processing units, a control unit that controls each of the components, A method of manufacturing a semiconductor device using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one substrate loaded Is placed on the first substrate holding pin, and the other substrate is transferred to the second substrate transport member, and the substrate holding pin and the second substrate transport member are the second substrate. A substrate mounting step of mounting a substrate on a mounting table; a heating step of heating the substrate by the first lamp and the second lamp while the substrate is mounted on the substrate mounting table; and the heating step Thereafter, the at least one substrate is supported by the first substrate holding pins, and the other substrate is supported by the second substrate transport member above the second substrate mounting table. Before starting the first ramp and the second ramp The method of manufacturing a semiconductor device having a step of.
（付記１５）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部は前記処理室に配置され、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた基板処理方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記基板載置台に基板が載置された状態で、前記第１のランプと前記第２のランプが基板を加熱する加熱工程と、前記加熱工程の後、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態となる前に、前記第１のランプと前記第２のランプを起動する工程とを有する基板処理方法。 (Supplementary Note 15) A transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, the first processing unit and the second processing unit are disposed in the processing chamber, and the first processing unit and the second processing unit A second substrate transport member that transports the substrate between the second processing units, a control unit that controls each of the components, A substrate processing method using a substrate processing apparatus comprising: a step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; and at least one of the transferred substrates as the substrate A step of placing the first substrate on the first substrate holding pin and transferring the other substrate to the second substrate transport member; and a state in which the substrate is placed on the substrate placement table, and the first lamp A heating step in which the second lamp heats the substrate; and after the heating step, the at least one substrate is supported by the first substrate holding pin, and the other substrate is mounted on the second substrate. A substrate processing method comprising a step of activating the first lamp and the second lamp before becoming a state of being supported by the second substrate transport member above the mounting table.
（付記１６）第１の基板搬送部材が搬送室から処理室に複数の基板を搬入する工程と、前記搬入された少なくとも1枚の基板を加熱された状態の第１の基板載置部の上方で保持する工程と、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の基板搬送部材が加熱された状態の第２の基板載置部の上方で前記他方の基板を保持する工程と、前記第１の基板載置部の上方で前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置部の上方で前記第２の基板搬送部材に支持された状態で第１のランプと第２のランプを起動する工程と、を有する半導体装置の製造方法。 (Supplementary Note 16) The first substrate carrying member carries a plurality of substrates from the carrying chamber to the processing chamber, and above the first substrate mounting portion in a state where the carried at least one substrate is heated. Holding the second substrate transporting member on the second substrate transporting member, and the second substrate transporting member in a state where the second substrate transporting member is heated. A step of holding the substrate, the at least one substrate is supported above the first substrate mounting portion, and the second substrate is positioned above the second substrate mounting portion. And a step of activating the first lamp and the second lamp while being supported by the substrate transport member.
（付記１７）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた半導体装置の製造方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の基板搬送部材が前記第２の基板載置台の上方で前記他方の基板を支持する工程と、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと第２のランプを起動する工程とを実行するプログラム。 (Supplementary Note 17) A transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table. A program that executes the process of starting up.
（付記１８）搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた半導体装置の製造方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の基板搬送部材が前記第２の基板載置台の上方で前記他方の基板を支持する工程と、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと第２のランプを起動する工程とを実行するプログラムを有する記録媒体。 (Appendix 18) A transfer chamber, a processing chamber for processing a substrate transferred from the transfer chamber, a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber, and the processing chamber, A first substrate mounting table provided with a first substrate holding pin; a first processing unit having a first lamp for irradiating an electromagnetic wave to a substrate mounted on the first substrate mounting table; A second substrate mounting table disposed adjacent to the first processing unit on a side different from the transfer chamber in the room and provided with a second substrate holding pin; and mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating the placed substrate with electromagnetic waves, a second substrate transporting member for transporting the substrate between the first processing unit and the second processing unit, A method of manufacturing a semiconductor device using a substrate processing apparatus having a control unit for controlling each configuration, A step of loading a plurality of substrates from the transfer chamber into the processing chamber by the first substrate transfer member; placing at least one of the transferred substrates on the first substrate holding pin; and A step of transferring a substrate to the second substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the first substrate holding The first lamp and the second lamp in a state where the at least one substrate is supported by a pin, and the other substrate is supported by the second substrate transport member above the second substrate mounting table. A recording medium having a program for executing
尚、この出願は、２０１２年９月２０日に出願された日本出願特願２０１２－２０６８０５を基礎として優先権の利益を主張するものであり、その開示の全てを引用によってここに取り込む。 This application claims the benefit of priority based on Japanese Patent Application No. 2012-206805 filed on September 20, 2012, the entire disclosure of which is incorporated herein by reference.
１０　　基板処理装置
１２　　搬送室
１６ａ，１６ｂ　　処理室
２２　　基板
３６　　真空ロボット（第１の基板搬送部材）
４３ａ，４３ｂ　　処理部
４４ａ，４４ｂ　　基板載置台
５２ａ，５２ｂ　　ランプハウス
６４　　ロボットアーム（第２の基板搬送部材）
７４ａ，７４ｂ　　基板保持ピン（リフターピン）
９６　　制御部
８０１　　ランプ（加熱源）
９０２　　ランプ電源コントローラ（ランプ電源）
  DESCRIPTION OF SYMBOLS 10 Substrate processing apparatus 12 Transfer chamber 16a, 16b Processing chamber 22 Substrate 36 Vacuum robot (first substrate transfer member)
43a, 43b Processing units 44a, 44b Substrate platforms 52a, 52b Lamp house 64 Robot arm (second substrate transport member)
74a, 74b Substrate holding pin (lifter pin)
96 Control unit 801 Lamp (heating source)
902 Lamp power controller (lamp power supply)

Claims (12)

  1. 搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記第１の基板保持ピンに第１の基板が支持され、更に第２の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと前記第２のランプを起動するよう制御する制御部と、を有する基板処理装置。 A transfer chamber; a processing chamber for processing a substrate transferred from the transfer chamber; a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber; and a first substrate disposed in the processing chamber. A first substrate mounting table provided with holding pins; a first processing unit including a first lamp for irradiating an electromagnetic wave to the substrate mounted on the first substrate mounting table; and the transfer in the processing chamber. A second substrate mounting table disposed adjacent to the first processing unit on a side different from the chamber and provided with a second substrate holding pin; and a substrate mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating electromagnetic waves; a second substrate transporting member for transporting a substrate between the first processing unit and the second processing unit; and the first substrate. The first substrate is supported by the holding pins, and further the second substrate is positioned above the second substrate mounting table and the second substrate. A substrate processing apparatus and a control section for controlling to start the second ramp and said first ramp while being supported by the conveying member.
  2. 前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after starting the first lamp and the second lamp.
  3. 前記基板はＯＨ成分を含有する膜を有する基板であって、前記第１のランプ及び前記第２のランプから照射される電磁波の波長は前記ＯＨ成分を有する膜に吸収される波長である請求項２に記載の基板処理装置。 The substrate is a substrate having a film containing an OH component, and the wavelength of the electromagnetic wave emitted from the first lamp and the second lamp is a wavelength absorbed by the film having the OH component. 2. The substrate processing apparatus according to 2.
  4. 前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する請求項３記載の基板処理装置。 The substrate processing apparatus according to claim 3, wherein the first lamp and the second lamp are turned off simultaneously with the rise of the substrate placed on the substrate placing table.
  5. 前記制御部は、前記第１の基板保持ピンに第１の基板が支持され、更に第２の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で、前記第１のランプから前記第１の基板に電磁波が照射され、前記第２のランプから前記第２の基板に電磁波が照射され、所定の時間経過後、前記第１のランプ及び前記第２のランプの電磁波照射を停止するよう制御する請求項１に記載の基板処理装置。 In the state where the first substrate is supported by the first substrate holding pin, and the second substrate is supported by the second substrate transport member above the second substrate mounting table, the control unit, The first lamp irradiates the first substrate with electromagnetic waves, and the second lamp irradiates the second substrate with electromagnetic waves. After a predetermined time has elapsed, the first lamp and the second lamp The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is controlled to stop electromagnetic wave irradiation of the lamp.
  6. 前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する請求項５記載の基板処理装置。 The substrate processing apparatus according to claim 5, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after the first lamp and the second lamp are activated.
  7. 前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する請求項６記載の基板処理装置。 The substrate processing apparatus according to claim 6, wherein the first lamp and the second lamp are turned off simultaneously with the rising of the substrate placed on the substrate placing table.
  8. 前記基板はＯＨ成分を含有する膜を有する基板であって、前記第１のランプ及び前記第２のランプから照射される電磁波の波長は前記ＯＨ成分を有する膜に吸収される波長である請求項１に記載の基板処理装置。 The substrate is a substrate having a film containing an OH component, and the wavelength of the electromagnetic wave emitted from the first lamp and the second lamp is a wavelength absorbed by the film having the OH component. 2. The substrate processing apparatus according to 1.
  9. 前記第１のランプと前記第２のランプを起動した後、前記第一の基板保持ピンと前記第二の基板保持ピンを下降させるよう制御する請求項８記載の基板処理装置。 The substrate processing apparatus according to claim 8, wherein the first substrate holding pin and the second substrate holding pin are controlled to be lowered after starting the first lamp and the second lamp.
  10. 前記基板載置台に載置された基板の上昇と同時に、前記第一のランプ及び第二のランプを消灯する請求項９記載の基板処理装置。 The substrate processing apparatus according to claim 9, wherein the first lamp and the second lamp are turned off simultaneously with the rising of the substrate placed on the substrate placing table.
  11. 搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記第１の基板載置台に第１の基板が載置され、更に前記第２の基板載置台に第２の基板が載置され、前記第１の基板と前記第２の基板を上昇させる際、前記第１のランプと第２のランプを起動するよう制御する制御部と、を有する基板処理装置。 A transfer chamber; a processing chamber for processing a substrate transferred from the transfer chamber; a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber; and a first substrate disposed in the processing chamber. A first substrate mounting table provided with holding pins; a first processing unit including a first lamp for irradiating an electromagnetic wave to the substrate mounted on the first substrate mounting table; and the transfer in the processing chamber. A second substrate mounting table disposed adjacent to the first processing unit on a side different from the chamber and provided with a second substrate holding pin; and a substrate mounted on the second substrate mounting. A second processing unit having a second lamp for irradiating electromagnetic waves; a second substrate transporting member for transporting a substrate between the first processing unit and the second processing unit; and the first substrate. A first substrate is mounted on the mounting table, and a second substrate is further mounted on the second substrate mounting table. When increasing the the plate second substrate, the substrate processing apparatus and a control section for controlling to start the first ramp and the second ramp.
  12. 搬送室と、前記搬送室から搬送された基板を処理する処理室と、基板を前記搬送室から前記処理室へ搬送する第１の基板搬送部材と、前記処理室内に配置され、第１の基板保持ピンを設けた第１の基板載置台と、前記第１の基板載置台上に載置した基板に電磁波を照射する第１のランプを有する第１の処理部と、前記処理室内の前記搬送室とは異なる側に前記第１の処理部に隣接して配置され、第２の基板保持ピンを設けた第２の基板載置台と、前記第２の基板載置台上に載置した基板に電磁波を照射する第２のランプを有する第２の処理部と、前記第１の処理部と前記第２の処理部の間で基板を搬送する第２の基板搬送部材と、前記各構成を制御する制御部と、を有する基板処理装置を用いた半導体装置の製造方法であって、前記第１の基板搬送部材が前記搬送室から前記処理室に複数の基板を搬入する工程と、前記搬入された少なくとも１枚の基板を前記第１の基板保持ピンに載置し、更に他方の基板を前記第２の基板搬送部材に移載する工程と、前記第２の基板搬送部材が前記第２の基板載置台の上方で前記他方の基板を支持する工程と、前記第１の基板保持ピンに前記少なくとも１枚の基板が支持され、更に前記他方の基板が前記第２の基板載置台上方で前記第２の基板搬送部材に支持された状態で前記第１のランプと第２のランプを起動する工程とを有する半導体装置の製造方法。
          A transfer chamber; a processing chamber for processing a substrate transferred from the transfer chamber; a first substrate transfer member for transferring a substrate from the transfer chamber to the processing chamber; and a first substrate disposed in the processing chamber. A first substrate mounting table provided with holding pins; a first processing unit including a first lamp for irradiating an electromagnetic wave to the substrate mounted on the first substrate mounting table; and the transfer in the processing chamber. A second substrate mounting table disposed adjacent to the first processing unit on a side different from the chamber and provided with a second substrate holding pin; and a substrate mounted on the second substrate mounting table. A second processing unit having a second lamp for irradiating electromagnetic waves, a second substrate transporting member for transporting a substrate between the first processing unit and the second processing unit, and controlling each configuration And a control unit that performs a semiconductor device manufacturing method using the substrate processing apparatus, A step of carrying a plurality of substrates from the transfer chamber into the processing chamber, a step of loading the loaded at least one substrate on the first substrate holding pins, and a second substrate on the second substrate; A step of transferring to the substrate transport member, a step of the second substrate transport member supporting the other substrate above the second substrate mounting table, and the at least one on the first substrate holding pin. Starting the first lamp and the second lamp in a state where a plurality of substrates are supported and the other substrate is supported by the second substrate transport member above the second substrate mounting table; A method for manufacturing a semiconductor device comprising:
PCT/JP2013/075015 2012-09-20 2013-09-17 Substrate processing device and manufacturing method for semiconductor device WO2014046081A1 (en)

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JP2012206805 2012-09-20
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TWI758391B (en) * 2016-12-31 2022-03-21 美商應用材料股份有限公司 Apparatus and methods for wafer rotation to improve spatial ald process uniformity
TWI789676B (en) * 2020-08-12 2023-01-11 台灣積體電路製造股份有限公司 Semiconductor process chamber, semiconductor processing system and method of generating process gas flow

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