WO2014045380A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
- Publication number
- WO2014045380A1 WO2014045380A1 PCT/JP2012/074121 JP2012074121W WO2014045380A1 WO 2014045380 A1 WO2014045380 A1 WO 2014045380A1 JP 2012074121 W JP2012074121 W JP 2012074121W WO 2014045380 A1 WO2014045380 A1 WO 2014045380A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- circuit
- semiconductor switching
- current
- voltage
- current detection
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
- H02M7/53873—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with digital control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
Definitions
- the present invention relates to a power conversion device in which a power semiconductor module including a plurality of semiconductor switching elements and a control circuit for switching and driving each of the plurality of semiconductor switching elements are insulated and separated.
- FIG. 10 is a schematic configuration diagram of an inverter device for driving a three-phase AC motor (load) M.
- This inverter device includes a power semiconductor module 10 packaged with a plurality of (six) semiconductor switching elements (IGBTs) Q1, Q2 to Q6, and the semiconductor switching elements Q1, Q2 to Q6 associated with each other. And a control circuit 20 for on / off driving.
- IGBT semiconductor switching element
- the semiconductor switching elements Q1, Q2 to Q6 are connected in series in pairs of two to form three half-bridge circuits HB, and these half-bridge circuits HB are provided in parallel to form the half-bridge circuit HB.
- a drive circuit for the load M is configured.
- a plurality (six) of flywheel diodes D1, D2 to D6 are connected in antiparallel to each of the semiconductor switching elements Q1, Q2 to Q6.
- Each of the half bridge circuits has a phase from the series connection point of the semiconductor switching elements Q1 and Q4, the semiconductor switching elements Q2 and Q5, and the series connection point of the semiconductor switching elements Q3 and Q6 that constitute the half bridge circuit.
- the load M is driven by supplying three-phase (U-phase, V-phase, W-phase) currents that are different by 120 ° to the load M.
- control circuit 20 includes an arithmetic unit 21 such as a CPU, for example, and generates a control signal for controlling on / off of the semiconductor switching elements Q1, Q2 to Q6 according to output currents of the half bridge circuits. 22. Furthermore, the control circuit 20 outputs gate drive signals Vg1, Vg2 to Vg6 for turning on / off the semiconductor switching elements Q1, Q2 to Q6 in accordance with the control signals generated by the control unit 22, respectively. Is provided.
- arithmetic unit 21 such as a CPU, for example
- the information on the output current of each of the semiconductor switching elements Q1, Q2 to Q6 required for the control operation by the control unit 22 is obtained by detecting the output current of each of the half bridge circuits using a current transformer CT, for example. Desired. However, recently, the semiconductor switching element Q and the flywheel diode D are provided with current detection terminals, and the control information is detected by detecting currents flowing through the semiconductor switching element Q and the flywheel diode D, respectively. (See, for example, Patent Documents 1 and 2).
- currents flowing through the semiconductor switching element Q and the flywheel diode D are detected by using current detection circuits 11a, 11b to 11f respectively connected to the current detection terminals. Then, the currents flowing through the semiconductor switching element Q and the flywheel diode D detected by the current detection circuits 11 (11a, 11b to 11f) for each of the positive and negative half cycles are added as shown in FIG. A current for one cycle flowing through each of the half bridge circuits is obtained by synthesizing in the units 12 (12a, 12b, 12c).
- the output current of each half bridge circuit detected using the current transformer CT or the like has a sine wave current waveform as shown in FIG. 11A, for example. However, only the output current of one phase is shown here. However, the current detected through the current detection terminals of the semiconductor switching element Q and the flywheel diode D is synchronized with the switching operation cycle of the semiconductor switching element Q as shown in FIG. It becomes a pulse-like discrete sine wave current waveform.
- the power semiconductor module 10 to which a large current / high voltage is applied and the control circuit 20 may be electrically insulated.
- an insulation circuit 13 13a, 13b, 13c
- This is realized by providing an insulating circuit 24 between the section 22 and the driving circuit 23.
- These insulation circuits 13 and 24 comprise, for example, an insulation amplifier that modulates a voltage signal and applies it to the primary side of the transformer and demodulates a signal output from the secondary side of the transformer to restore the voltage signal.
- the insulating circuit 24 provided on the drive side of the semiconductor switching elements Q1, Q2 to Q6 only transmits an on / off control signal (digital signal) to the semiconductor switching elements Q1, Q2 to Q6.
- the insulation circuit 13 provided in the feedback system can transmit the output voltage (analog signal) of the adder 12 having a discrete sine wave current waveform as shown in FIG. is necessary. Therefore, the signal transmission through the insulating circuit 13 has the following problems.
- the output voltage of the adder 12 corresponds to a current that flows intermittently through the semiconductor switching element Q and the flywheel diode D in synchronization with the switching of the semiconductor switching element Q.
- the output voltage of the adder 12 is transmitted through the insulating circuit 13, the output voltage is, for example, shown in FIG. 13B due to the response characteristic (response delay time) of the insulating circuit 13. Thus, it cannot be denied that the leading edge is greatly distorted.
- the switching period of the semiconductor switching element Q is 100 ⁇ sec
- the duty ratio command value that defines the ON width of the semiconductor switching element Q of the lower arm in the half bridge circuit is 10% (10 ⁇ sec).
- the output voltage of the insulating circuit 13 whose response delay time is 10 ⁇ s is substantially triangular.
- the output voltage of the insulation circuit 13 is reduced to about 1 ⁇ 2 of the input voltage of the insulation circuit 13 on an average for one cycle.
- the duty ratio command value is further reduced, the error of the input / output voltage of the insulation circuit 13 becomes larger due to the influence of the response delay time of the insulation circuit 13.
- the duty ratio command value that defines the ON width of the semiconductor switching element Q of the upper arm constituting the half bridge circuit is 90% (90 ⁇ sec)
- the current detected from the flywheel diode D of the lower arm The waveform is a rectangular waveform with a duty ratio of approximately 10% (approximately 10 ⁇ sec), and similarly, distortion occurs in the output voltage of the insulating circuit 13. Therefore, the signal transmitted through the insulating circuit 13 includes a large error that is significantly different from the output voltage of the adder 12. Then, there arises a problem that the control circuit 20 cannot perform switching control of each of the semiconductor switching elements Q1, Q2 to Q6 with high accuracy according to the current detected as described above.
- the present invention has been made in consideration of such circumstances, and its purpose is to supply a current detected through a current detection terminal provided in each of the semiconductor switching element and the flywheel diode to a control circuit through an insulation circuit.
- An object of the present invention is to provide a power converter having a simple configuration that can transmit with high accuracy and thereby control the switching of the semiconductor switching element stably and accurately.
- a power conversion device (1) includes a pair or a plurality of pairs of semiconductors connected in series to form a half-bridge circuit (HB) and driven on / off in relation to each other.
- a switching element eg, IGBT
- Q1, Q2 to Q6 and a plurality of flywheel diodes (D1, D2 to D6) connected in antiparallel to the semiconductor switching elements (Q1, Q2 to Q6), respectively.
- a power semiconductor module (10) comprising: A control circuit that is isolated from the power semiconductor module (10) and that drives each of the semiconductor switching elements (Q1, Q2 to Q6) according to a current flowing through the half bridge circuit (HB).
- the first and second current detectors (11a, 11b to 11f) are provided with current detections respectively provided in the semiconductor switching elements (Q4, Q5, Q6) and the flywheel diodes (D4, D5, D6). It is desirable to provide a current correction function (18) for correcting the current detected via the current detection terminal by changing the voltage of the terminal.
- the power semiconductor module (10) includes six semiconductor switching elements (Q1, Q2 to Q6) and six flywheels constituting three sets of half-bridge circuits corresponding to each phase of the three-phase AC power supply.
- a diode device (D1, D2 to D6) is provided to form an inverter device (1) for a three-phase AC load.
- the power semiconductor module (10) includes one or two pairs of the semiconductor switching elements (Q1, Q2 to Q4) constituting the one or two sets of half-bridge circuits, and the semiconductor switching elements (Q1, Q2 to Q4) each comprising the flywheel diodes (D1, D2 to D4) connected in antiparallel, From the output circuit connected to the output end of the one or two sets of half-bridge circuits via an inductance, and a converter device for controlling the current flowing through the inductance to obtain a predetermined voltage in the output circuit Become.
- the control circuit (20) preferably receives the voltage signal from the sample and hold circuit (14a, 14b, 14c) given through the insulating circuit (13a, 13b, 13c) as a voltage adjustment circuit (16a, 16b, 16c), and the gain and offset are adjusted and then input.
- the discrete switching sine that is detected through the semiconductor switching element and the current detection terminal provided in each of the flywheel diodes connected in antiparallel to the semiconductor switching element A voltage signal indicating a wave current waveform is held in a sample and hold circuit that operates in synchronization with the switching operation cycle of the semiconductor switching element Q. Since the output voltage changing stepwise of this sample and hold circuit is transmitted via the insulation circuit, it is detected via the current detection terminal without being affected by the response characteristic (response delay time) of the insulation circuit. A voltage signal indicating the magnitude of the generated current can be accurately supplied to the control circuit.
- control circuit it is possible to generate a control signal for controlling on / off of the semiconductor switching element with high accuracy based on a signal input through the insulating circuit, and each of the semiconductor switching elements Switching control can be performed stably.
- FIG. 7 is a diagram illustrating a configuration example of a current detection circuit in the power conversion device.
- the signal waveform diagram for demonstrating the effect of this invention.
- the schematic block diagram of the conventional power converter device The figure which shows the output current waveform of a half-bridge circuit, and the current waveform which flows into a semiconductor switching element.
- the schematic block diagram of the conventional power converter device provided with the insulation circuit.
- FIG. 1 is a schematic configuration diagram of a power conversion device 1 according to an embodiment of the present invention, in which the same parts as those in the conventional device shown in FIG. 10 are denoted by the same reference numerals.
- the power converter 1 according to this embodiment is characterized by a sample hold (SH) that holds the output voltage of each adder 12 (12a, 12b, 12c) in synchronization with the switching period of the semiconductor switching element Q.
- Circuits 14 (14a, 14b, 14c) are provided, and each of the insulating circuits 13 (13a, 13b, 13c) controls the output voltage held in each of the sample hold circuits 14 (14a, 14b, 14c). The point is that it is configured to transmit to the circuit 20.
- each of the sample and hold circuits 14 receives the carrier clock signal Fc transmitted from the control circuit 20 via the insulating circuit 13d connected in parallel to the insulating circuits 13a, 13b, 13c.
- the carrier clock signal Fc is a pulse signal having a duty ratio of 50% that defines the switching frequency fc of the semiconductor switching element Q (Q1, Q2 to Q6).
- the control circuit 20 will be briefly described.
- the control circuit 20 generates a triangular wave in synchronization with the rising and falling timings of the pulse signal (carrier clock signal Fc), and the triangular wave and the semiconductor module 10 side.
- the feedback signal fed back from is compared.
- the control circuit 20 obtains, for example, a period in which the level of the triangular wave exceeds the level of the feedback signal as an on period of each of the semiconductor switching elements Q (Q1, Q2 to Q6),
- the semiconductor switching elements Q (Q1, Q2 to Q6) are respectively subjected to switching control (on / off control).
- Each of the current detection circuits 11 includes an inverting amplifier in which a feedback resistor Rf is provided between the output terminal and the inverting input terminal of the operational amplifier OP as shown in FIG.
- the current detection circuit 11 inputs the current Is output from the current detection terminal of the semiconductor switching element Q or the flywheel diode D to the operational amplifier OP, and outputs the current Is as the output of the operational amplifier OP to the input current Is. A corresponding output voltage Vs is obtained.
- the current Is output from the current detection terminal is proportional to the main current flowing through the semiconductor switching element Q or the flywheel diode D, and is generally about one thousandth of the main current. There is no need to explain what is set.
- the sample hold circuit 14 includes an input buffer constituted by an operational amplifier OP1 and an output buffer constituted by an operational amplifier OP2, for example, as shown in FIG.
- the output voltage of the input buffer is sampled via the switch element SW and held in the capacitor C, and the voltage held in the capacitor C is applied to the output buffer.
- each sample and hold circuit 14 includes the adder 12 (12a, 12b, 12c) at, for example, the middle timing (Ton / 2) in each ON period of the semiconductor switching element Q and the flywheel diode D. ) Sample the output voltage and hold the sampled voltage. As a result, the average value of the output voltage of the adder 12 (12a, 12b, 12c) whose voltage changes in a pulse manner is obtained as the output voltage that changes in a stepwise manner in each of the sample and hold circuits 14.
- the waveform shaping circuit 15 performs the sampling operation of each sample and hold circuit 14 (14a, 14b, 14c) in accordance with the carrier clock signal Fc described above for switching control of each of the semiconductor switching elements Q1, Q2 to Q6. Is controlling.
- Each sample and hold circuit 14 (14a, 14b, 14c) samples the pulsed output voltage of the adder 12 (12a, 12b to 12f) at the falling timing of the carrier clock signal Fc, and outputs the carrier clock. It is held for one period of the signal Fc.
- the voltage sampled by each of the sample and hold circuits 14 is the timing at the center (1/2) of the on period (Ton) of the semiconductor switching element Q and the flywheel diode D.
- This is an average voltage value at (Ton / 2).
- the output voltage of each sample and hold circuit 14 is an average value over one pulse width of the output voltage that is intermittently pulsed of the adder 12 (12a, 12b to 12f). Will be obtained.
- the output voltage of the sample and hold circuit 14 controlled for sampling as described above is an average value of the output voltages of the adder 12 in which the peak value (voltage value) changes intermittently in a discrete sine wave current waveform. Is a stepped voltage waveform close to a sine wave held for each switching period. Then, the output voltage of the sample hold circuit 14 is transmitted to the control circuit 20 side through the insulation circuit 13 (13a, 13b, 13c).
- the insulation circuit 13 (13a, 13b, 13c) having excellent input / output characteristics for accurately transmitting the input voltage it cannot be denied that the response delay time is generally long.
- the insulating circuit 13 (13a, 13b, 13c) having a rising time from zero voltage (0V) to its maximum voltage of 10 ⁇ s is used.
- the frequency of the output current of the half-bridge circuit is 100 Hz, the amplitude of which is a sine wave having an allowable maximum current, and this is subjected to switching control at a carrier frequency of 10 kHz.
- the insulation circuit 13 (13a, 13b, 13c) follows the input voltage waveform in 400 nsec and obtains its output voltage by simple calculation. Therefore, the insulation circuit 13 (13a, 13b, 13c) can accurately transmit the output voltage of the adder 12 (12a, 12b to 12f) with sufficient margin.
- the output voltage of each sample and hold circuit 14 transmitted through each of the insulation circuits 13 (13a, 13b, and 13c) is adjusted through the voltage adjustment circuit 16 (16a, 16b, and 16c). Then, it is given to the control unit 22 in the control circuit 20.
- the voltage adjusting circuit 16 (16a, 16b, 16c) has a function capable of adjusting a gain and an offset with respect to the output voltage of each insulating circuit 13 (13a, 13b, 13c).
- the arithmetic unit 21 mainly composed of, for example, a CPU of the control unit 22 takes in the output voltage of the voltage adjustment circuit 16 (16a, 16b, 16c) via an AD converter 21a included in the arithmetic unit 21. , Information on the current flowing through the semiconductor switching element Q and the flywheel diode D is acquired.
- the arithmetic unit 21 calculates currents flowing through the semiconductor switching element Q and the flywheel diode D by the arithmetic unit 21b based on the information acquired through the AD converter 21a, and according to the calculation result. Thus, a signal (food back signal) necessary for switching control of each of the semiconductor switching elements Q (Q1, Q2 to Q6) is generated.
- the PWM modulator 21c is a pulse width modulated control signal for driving the semiconductor switching elements Q (Q1, Q2 to Q6) on and off according to the signal (foodback signal) obtained by the arithmetic unit 21b. Are generated respectively.
- the control signal generated in this way is transmitted to the drive circuit 23 through the insulation circuit 24, and the gate drive signals Vg1, Vg2 to Vg6 are generated and the semiconductor switching elements Q (Q1, Q2 to Q6) are generated. ) Are driven to be switched at timings related to each other.
- FIG. 5 shows a comparison of signal waveforms at various parts in the power conversion apparatus 1 configured as described above.
- a discrete sine wave is drawn on the semiconductor switching element Q constituting the lower arm of the half bridge circuit in synchronization with the switching of the semiconductor switching element Q in the negative half cycle.
- Current flows in pulses.
- a sense current proportional to the pulsed current is output from the current detection terminal of the semiconductor switching element Q. Therefore, the output voltage of the current detection circuit 11a for detecting the sense current is a negative half-cycle pulse voltage waveform that changes in a pulse shape by drawing a discrete sine wave as shown in FIG.
- the flywheel diode D connected in antiparallel to the semiconductor switching element Q has a pulsed current drawn in a discrete sine wave in synchronization with the switching of the semiconductor switching element Q in the positive half cycle. Flows. A sense current corresponding to this current is output from the current detection terminal of the flywheel diode D. Therefore, the output voltage of the current detection circuit 11b for detecting the sense current is a positive half-cycle pulse voltage waveform that changes in a pulse shape by drawing a discrete sine wave as shown in FIG. 5B.
- the voltage waveform over one cycle detected through each of the current detection circuits 11a and 11b and synthesized through the adder 12a is the semiconductor switching element Q as shown in FIG.
- the pulse voltage waveform changes while drawing a discrete sine wave in synchronization with the switching.
- the output voltage of the sample-and-hold circuit 14a for sampling and holding the output voltage of the adder 12a in synchronization with the switching of the semiconductor switching element Q is described above by its voltage holding function as shown in FIG.
- a voltage waveform close to a sine wave that changes in a staircase pattern is obtained by filling the valleys of the discrete pulse voltage waveform.
- FIGS. 6 (a) and 6 (b) the output voltage of the adder 12a and the output voltage of the sample and hold circuit 14a are enlarged, respectively.
- a transient response change associated with charging / discharging of the capacitor C in FIG. 3 is exhibited, the output voltage of the adder 12a is sequentially sampled and a voltage waveform that changes stepwise is obtained.
- an ideal sample hold waveform is shown when the charge / discharge time of the capacitor C is zero (0) and the [H] period of the sample hold signal is also infinitely small.
- the output voltage of the insulation circuit 13a is the response of the insulation circuit 13a as shown in FIG.
- the voltage signal waveform substantially maintains the change in the output voltage of the sample and hold circuit 14a. That is, as shown in FIG. 6C, the output voltage of the insulating circuit 13a is transmitted in a stepped manner while causing a waveform dullness corresponding to a voltage difference indicating a change in the stepped output voltage of the sample and hold circuit 14a.
- the voltage waveform is Therefore, the output voltage of the insulating circuit 13a has a voltage waveform that faithfully reproduces the change in the average voltage of the pulse voltage waveform that changes while drawing the discrete sine wave.
- the output voltage of the insulation circuit 13a is adjusted in voltage according to the dynamic range of the AD converter 21a via the voltage adjustment circuit 16a, and the arithmetic unit 21 is used as a feedback signal having a voltage waveform shown in FIG. Will be entered. Therefore, in the arithmetic unit 21, the current flowing in a pulsed manner through the semiconductor switching element Q and the flywheel diode D is output from the half bridge circuit formed by the semiconductor switching element Q and the flywheel diode D. It is possible to accurately generate a control signal for switching control of the semiconductor switching element Q using current information corresponding to the current to be fed as a feedback signal.
- the output voltage of the adder 12 (12a, 12b, 12c) is synchronized with the switching period of the semiconductor switching element Q and the sample hold circuit 14 (14a , 14b, 14c), and a configuration is adopted in which the output voltage of the sample hold circuit 14 (14a, 14b, 14c) is transmitted via the insulating circuit 13 (13a, 13b, 13c). .
- the information indicated by the output voltage of the adder 12 (12a, 12b, 12c) is transmitted to the control circuit 20 side without being substantially affected by the response delay time of the insulating circuit 13 (13a, 13b, 13c). It can be transmitted with high accuracy.
- the semiconductor switching elements Q Q1, Q2 to Q6 can be controlled to be switched at appropriate timing.
- a change in the voltage signal transmitted through the insulating circuit 13 (13a, 13b, 13c) can be reduced, an error caused by the transmission characteristics of the insulating circuit 13 (13a, 13b, 13c). It can be reduced by itself, and high-accuracy switching control can be realized.
- the sense current Is detected through the current detection terminals of the semiconductor switching element Q and the flywheel diode D described above is ideally the main current flowing through the semiconductor switching element Q and the flywheel diode D, respectively.
- the current ratio is determined in accordance with the area ratio between the main region and the sense region of the element. However, it cannot be denied that an error occurs in the current ratio due to a difference in device structure and area layout of each element.
- Such an error can be corrected by, for example, gain adjustment and offset adjustment by the voltage adjustment circuits 16a, 16b, and 16c.
- the voltage adjustment circuits 16a and 16b. , 16c is difficult to correct over a wide range and with high accuracy.
- the current detection circuits 17a, 17b to 17f incorporating this current correction circuit are configured, for example, as shown in FIG. That is, in addition to the inverting amplification type current detection circuit 17 constituted by the operational amplifier OP provided with the feedback resistor Rf, a voltage corresponding to the output voltage Vs of the operational amplifier OP is fed back to the non-inverting terminal of the operational amplifier OP.
- a current correction circuit 18 is provided.
- the current correction circuit 18 includes a first variable voltage source circuit 18a that generates a voltage corresponding to the output voltage Vs of the operational amplifier OP in the current detection circuit 17, and a second voltage that generates a predetermined voltage.
- Variable voltage source circuit 18b, and an addition circuit 18c that adds the output voltages of these variable voltage source circuits 18a and 18b and applies the output voltage to the non-inverting terminal of the operational amplifier OP.
- the first variable voltage source circuit 18a is composed of a variable resistor or a circuit corresponding thereto. Then, when the sense current is larger than the specification, the first variable voltage source circuit 18a increases the voltage of the non-inverting terminal of the operational amplifier OP by adjusting the variable resistor to thereby increase the voltage of the semiconductor switching element (IGBT). ) In Q, only the collector-emitter voltage applied to the sense element portion is lowered, thereby reducing the sense current Is. Due to the voltage adjustment of the non-inverting terminal of the operational amplifier OP, the error in the sense current Is caused by the design specification of the internal resistance ratio of the main element portion and the sense element portion in the semiconductor switching element (IGBT) Q is different. Correction is performed.
- the second variable voltage source circuit 18b is composed of a variable voltage source or a circuit corresponding thereto.
- the second variable voltage source circuit 18b serves to adjust the sense current by changing the voltage at the non-inverting terminal of the operational amplifier OP.
- the difference in threshold voltage between the main element portion and the sense element portion in the semiconductor switching element (IGBT) Q is adjusted.
- the current detection circuit 17 including the current correction circuit 18 configured as shown in FIG. 8 is used instead of the current detection circuit 11 described above, the difference in specifications between the semiconductor switching element Q and the flywheel diode D described above.
- the pulse-like output voltages of the adders 12a, 12b, and 12c are output by the sample and hold circuits 14a, 14b, and 14c.
- the period of the switching period is held. Accordingly, the output voltages of the sample and hold circuits 14a, 14b and 14c are stepped voltage waveforms in which the average values of the pulsed output voltages of the adders 12a, 12b and 12c are connected.
- the output voltages of the insulating circuits 13a, 13b, and 13c are the transmission voltages of the output voltages that change stepwise of the sample and hold circuits 14a, 14b, and 14c, the delay response of the insulating circuits 13a, 13b, and 13c.
- the bluntness of the voltage waveform due to the characteristic is only dependent on the stepped voltage change amount, and the output voltages of the sample and hold circuits 14a, 14b, and 14c are substantially faithfully reproduced as shown in FIG. Will be. Therefore, the error with respect to the average value of the pulsed output voltages of the adders 12a, 12b, and 12c can be suppressed to a sufficiently small value.
- the insulation circuits 13a, 13b, and 13c are connected as shown in FIG. It cannot be denied that the output voltage includes a large error compared to the pulsed output voltages of the adders 12a, 12b, and 12c.
- the pulse width is narrow, the output voltage returns to zero (0) before the output voltage of the insulating circuits 13a, 13b, and 13c sufficiently rises, so that the output voltage waveform greatly differs.
- the sample-and-hold circuits 14a, 14b, and 14c are used to convert the pulse-like output voltages of the adders 12a, 12b, and 12c into stepped voltage waveforms, and then pass through the insulating circuits 13a, 13b, and 13c. Unlike the case of transmitting a pulsed voltage waveform, the input voltage waveform can be transmitted substantially faithfully. Accordingly, as shown in FIGS. 9A and 9B in comparison with the output voltages of the insulation circuits 13a, 13b, and 13c, by using the sample and hold circuits 14a, 14b, and 14c, the insulation circuits 13a, 13b, and 14c are used. It is possible to minimize the transmission error due to the delay response characteristic of 13c.
- the control circuit 20 is simple and reliable. It is possible to detect the current flowing through each half bridge circuit from each sense current Is of the switching element Q and the flywheel diode D, and to control the switching of the semiconductor switching elements Q1, Q2 to Q6 with high accuracy. Become.
- the present invention is not limited to the embodiment described above.
- the semiconductor module 10 including six semiconductor switching elements Q1, Q2 to Q6 and configuring three sets of half-bridge circuits has been described as an example.
- the semiconductor module 10 including two sets of half-bridge circuits Is equally applicable.
- the present invention can be similarly applied to the semiconductor module 10 constituting one set of half-bridge circuits.
- instead of detecting the sense current Is of the flywheel diode D it is of course possible to detect each sense current Is of the pair of switching elements Q constituting the half bridge circuit.
- the specific configurations of the insulating circuits 13a, 13b, and 13c can be appropriately employed as long as they satisfy the specifications of the power conversion device in consideration of the linearity and delay response characteristics of the transmission characteristics. . It is sufficient to realize the sample hold circuits 14a, 14b, and 14c as having characteristics satisfying the specifications of the power converter. Further, it goes without saying that the present invention can be similarly applied to various types of converter devices other than the above-described three-phase AC inverter devices, that is, various types of power converter devices that have been proposed in the past. In addition, the present invention can be variously modified and implemented without departing from the scope of the invention.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
Description
このパワー半導体モジュール(10)とは絶縁分離して設けられて前記ハーフブリッジ回路(HB)に流れる電流に応じて前記各半導体スイッチング素子(Q1,Q2~Q6)をそれぞれオン・オフ駆動する制御回路(23)と、
前記パワー半導体モジュール(10)における前記ハーフブリッジ回路(HB)を形成した前記半導体スイッチング素子(Q1,Q2~Q6)の一方が備える電流検出端子、および当該一方の半導体スイッチング素子(Q4,Q5,Q6)に逆並列に接続された前記フライホイール・ダイオード(D4,D5,D6)が備える電流検出端子を介して前記ハーフブリッジ回路(HB)に流れる電流を検出する電流検出回路(11a,11b~11f)と、
この電流検出回路(11a,11b~11f)を介して検出された電流に相当する電圧を一定期間、例えば前記半導体スイッチング素子のスイッチング周期に同期した期間に亘って保持するサンプルホールド回路(14a,14b,14c)と、
このサンプルホールド回路(14a,14b,14c)に保持された電圧を前記制御回路(20)に伝達する絶縁回路(13a,13b,13c)と
を備えたことを特徴としている。
前記1組または2組のハーフブリッジ回路の出力端にインダクタンスを介して接続される出力回路と共に、前記インダクタンスに流れる電流を制御して前記出力回路に所定の電圧を得るコンバータ装置を形成するものからなる。
10 半導体モジュール
11(11a,11b~11f) 電流検出回路
12(12a,12b,12c) 加算器
13(13a,13b,13c,13d) 絶縁回路
14(14a,14b,14c) サンプルホールド(SH)回路
15 波形整形回路
16(16a,16b,16c) 電圧調整回路
17a,17b~17f 電流検出回路
18 電流補正回路
20 制御回路
21 演算装置
21a AD変換器
21b 演算部
21c PWM変調器
22 制御部
23 駆動回路
24 絶縁回路
Claims (7)
- 直列に接続されてハーフブリッジ回路を形成し、互いに関連してオン・オフ駆動される一対または複数対の半導体スイッチング素子と、前記各半導体スイッチング素子にそれぞれ逆並列に接続される複数のフライホイール・ダイオードとを備えたパワー半導体モジュールと、
このパワー半導体モジュールとは絶縁分離して設けられて前記各半導体スイッチング素子をそれぞれオン・オフ駆動する制御回路と、
前記パワー半導体モジュールにおける前記ハーフブリッジ回路を形成した前記半導体スイッチング素子の一方が備える電流検出端子、および当該一方の半導体スイッチング素子に逆並列に設けられた前記フライホイール・ダイオードが備える電流検出端子を介して前記ハーフブリッジ回路に流れる電流を検出する電流検出回路と、
この電流検出回路を介して検出された電流に相当する電圧を一定期間保持するサンプルホールド回路と、
このサンプルホールド回路に保持された電圧を前記制御回路に伝達する絶縁回路と
を具備したことを特徴とする電力変換装置。 - 前記電流検出回路は、前記半導体スイッチング素子に流れる電流、および前記フライホイール・ダイオードに流れる電流をそれぞれ検出する第1および第2の電流検出器と、これらの第1および第2の電流検出回路の各出力を加算する加算器とからなる請求項1に記載の電力変換装置。
- 前記第1および第2の電流検出器は、前記半導体スイッチング素子および前記フライホイール・ダイオードがそれぞれ備える電流検出端子の電圧を可変して該電流検出端子を介して検出される電流を補正する電流補正回路を備えたものである請求項2に記載の電力変換装置。
- 前記サンプルホールド回路は、前記半導体スイッチング素子のスイッチング周期に同期して前記電流検出回路の出力信号をサンプリングし、次のサンプリング・タイミングまで保持するものである請求項1に記載の電力変換装置。
- 前記パワー半導体モジュールは、三相交流電源の各相に対応する3組のハーフブリッジ回路を構成する6個の半導体スイッチング素子、および6個のフライホイール・ダイオードを備えて三相交流負荷に対するインバータ装置を形成したものである請求項1に記載の電力変換装置。
- 前記パワー半導体モジュールは、1組または2組のハーフブリッジ回路を構成する一対または2対の前記半導体スイッチング素子、および前記各半導体スイッチング素子にそれぞれ逆並列に接続される前記フライホイール・ダイオードをそれぞれ備え、
前記1組または2組のハーフブリッジ回路の出力端にインダクタンスを介して接続される出力回路と共に、前記インダクタンスに流れる電流を制御して前記出力回路に所定の電圧を得るコンバータ装置を形成するものである請求項1に記載の電力変換装置。 - 前記制御回路は、前記絶縁回路を介して与えられる前記サンプルホールド回路からの電圧信号を、電圧調整回路を介して利得とオフセットとを調整して入力するものである請求項1に記載の電力変換装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP12878216.6A EP2738931B1 (en) | 2012-09-20 | 2012-09-20 | Power conversion device |
JP2013516049A JP5304967B1 (ja) | 2012-09-20 | 2012-09-20 | 電力変換装置 |
US14/125,924 US8934274B2 (en) | 2012-09-20 | 2012-09-20 | Power conversion apparatus |
PCT/JP2012/074121 WO2014045380A1 (ja) | 2012-09-20 | 2012-09-20 | 電力変換装置 |
CN201280028917.1A CN103828216B (zh) | 2012-09-20 | 2012-09-20 | 电力转换装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/074121 WO2014045380A1 (ja) | 2012-09-20 | 2012-09-20 | 電力変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014045380A1 true WO2014045380A1 (ja) | 2014-03-27 |
Family
ID=49529446
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/074121 WO2014045380A1 (ja) | 2012-09-20 | 2012-09-20 | 電力変換装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8934274B2 (ja) |
EP (1) | EP2738931B1 (ja) |
JP (1) | JP5304967B1 (ja) |
CN (1) | CN103828216B (ja) |
WO (1) | WO2014045380A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017099069A (ja) * | 2015-11-19 | 2017-06-01 | 富士電機株式会社 | インバータ |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5664536B2 (ja) * | 2011-12-19 | 2015-02-04 | 株式会社デンソー | 電流検出回路および半導体集積回路装置 |
JP6155779B2 (ja) * | 2013-04-09 | 2017-07-05 | 株式会社デンソー | パワー素子の電流検出回路 |
DE102014119544B4 (de) * | 2014-12-23 | 2023-08-17 | Infineon Technologies Ag | Halbleitervorrichtung |
US9800134B2 (en) | 2015-02-25 | 2017-10-24 | Rockwell Automation Technologies, Inc. | Motor drive with LCL filter inductor with built-in passive damping resistor for AFE rectifier |
US9584043B2 (en) * | 2015-02-28 | 2017-02-28 | Rockwell Automation Technologies, Inc. | Inverter phase current reconstruction apparatus and methods |
JP2017060276A (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 三相インバータ装置 |
JP6277247B1 (ja) * | 2016-10-03 | 2018-02-07 | 本田技研工業株式会社 | 変換装置、機器及び制御方法 |
TWI728588B (zh) * | 2019-12-11 | 2021-05-21 | 茂達電子股份有限公司 | 固定導通時間電源轉換器的電流偵測電路及方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6361962A (ja) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | 電流検出回路 |
JPS6380774A (ja) * | 1986-09-22 | 1988-04-11 | Hitachi Ltd | Pwmインバータの電流制御装置 |
JP2000134955A (ja) * | 1998-10-26 | 2000-05-12 | Hitachi Ltd | インバータ装置及びインバータ装置用スイッチングモジュール |
JP2007195249A (ja) * | 2001-08-20 | 2007-08-02 | Internatl Rectifier Corp | モータドライブ・電流検知回路 |
JP2007274747A (ja) * | 2006-03-30 | 2007-10-18 | Daikin Ind Ltd | 電流検出装置及び回転速度制御装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2190754A (en) | 1986-04-11 | 1987-11-25 | Hitachi Ltd | Load current detecting device for pulse width modulation inverter |
US4777578A (en) | 1988-01-04 | 1988-10-11 | General Electric Company | Integrated current sensor torque control for ac motor drives |
US5719519A (en) * | 1995-11-20 | 1998-02-17 | Motorola, Inc. | Circuit and method for reconstructing a phase current |
JP2001147243A (ja) * | 1999-11-24 | 2001-05-29 | Mitsubishi Electric Corp | アナログ信号検出回路及び半導体電力変換装置の交流側電流検出器 |
JP2003274667A (ja) * | 2002-03-14 | 2003-09-26 | Toshiba Corp | 三相インバータ用パワーモジュールおよび三相モータ駆動システム |
CN1170125C (zh) * | 2002-10-14 | 2004-10-06 | 杭州电子工业学院 | 智能变频、变流式励磁电磁流量计 |
KR100789441B1 (ko) * | 2005-12-30 | 2007-12-28 | 엘에스산전 주식회사 | 인버터의 전류 검출 장치 및 방법 |
JP5230068B2 (ja) * | 2006-01-13 | 2013-07-10 | オムロンオートモーティブエレクトロニクス株式会社 | インバータ装置 |
JP5061036B2 (ja) * | 2008-06-11 | 2012-10-31 | 株式会社ケーヒン | 絶縁通信回路 |
CN101477170B (zh) * | 2009-01-19 | 2011-10-12 | 哈尔滨工业大学深圳研究生院 | 电力录波采样延时检测***及方法 |
CN101666858B (zh) * | 2009-09-09 | 2012-02-08 | 中国矿业大学 | 开关磁阻电机双主开关功率变换器主开关故障诊断方法 |
CN102104318B (zh) * | 2009-12-18 | 2014-10-29 | 株式会社电装 | 用于电功率转换电路的驱动器件 |
JP5640541B2 (ja) * | 2010-08-10 | 2014-12-17 | 三菱電機株式会社 | 系統連系インバータ装置 |
-
2012
- 2012-09-20 EP EP12878216.6A patent/EP2738931B1/en not_active Not-in-force
- 2012-09-20 US US14/125,924 patent/US8934274B2/en not_active Expired - Fee Related
- 2012-09-20 JP JP2013516049A patent/JP5304967B1/ja not_active Expired - Fee Related
- 2012-09-20 CN CN201280028917.1A patent/CN103828216B/zh not_active Expired - Fee Related
- 2012-09-20 WO PCT/JP2012/074121 patent/WO2014045380A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6361962A (ja) * | 1986-09-03 | 1988-03-18 | Toshiba Corp | 電流検出回路 |
JPS6380774A (ja) * | 1986-09-22 | 1988-04-11 | Hitachi Ltd | Pwmインバータの電流制御装置 |
JP2000134955A (ja) * | 1998-10-26 | 2000-05-12 | Hitachi Ltd | インバータ装置及びインバータ装置用スイッチングモジュール |
JP2007195249A (ja) * | 2001-08-20 | 2007-08-02 | Internatl Rectifier Corp | モータドライブ・電流検知回路 |
JP2007274747A (ja) * | 2006-03-30 | 2007-10-18 | Daikin Ind Ltd | 電流検出装置及び回転速度制御装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2738931A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017099069A (ja) * | 2015-11-19 | 2017-06-01 | 富士電機株式会社 | インバータ |
Also Published As
Publication number | Publication date |
---|---|
JP5304967B1 (ja) | 2013-10-02 |
CN103828216B (zh) | 2015-06-17 |
US20140226380A1 (en) | 2014-08-14 |
CN103828216A (zh) | 2014-05-28 |
EP2738931A1 (en) | 2014-06-04 |
EP2738931A4 (en) | 2015-07-22 |
JPWO2014045380A1 (ja) | 2016-08-18 |
US8934274B2 (en) | 2015-01-13 |
EP2738931B1 (en) | 2017-03-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5304967B1 (ja) | 電力変換装置 | |
EP2445110B1 (en) | Gate driver unit for electrical switching device | |
WO2012137860A1 (ja) | 半導体装置と、それを用いたインバータ、コンバータおよび電力変換装置 | |
US20110299312A1 (en) | Inverter for solar cell array | |
US10425017B2 (en) | Method and apparatus for reducing current sensor power loss | |
US10826411B2 (en) | Device for controlling power conversion circuit | |
EP2919377A1 (en) | Inverter device | |
EP2892145A1 (en) | Power converter and inverter device equipped with same | |
AU2013307638B2 (en) | An induction heating generator and an induction cooking hob | |
JP6107157B2 (ja) | 電力変換装置 | |
JP4786462B2 (ja) | 半導体スイッチング素子の駆動回路および電力変換装置 | |
EP3176941B1 (en) | Neutral point potential control method for single phase npc inverter | |
JP4664166B2 (ja) | 多相対多相電力変換装置 | |
JP6136720B2 (ja) | スイッチング制御装置 | |
JP5861579B2 (ja) | 物理量検出装置 | |
JP2012080740A (ja) | インバータ制御装置 | |
JP2004048863A (ja) | 三相電流制御装置 | |
JP6863117B2 (ja) | 単相三線式インバータ及び電圧補償装置 | |
US11218085B2 (en) | Power conversion device having an inverter circuit including current limitation circuits and a control circuit controlling same | |
JP4448294B2 (ja) | 電力変換装置 | |
US11594982B2 (en) | Parallel inverter device | |
US11611291B2 (en) | Power system and pulse width modulation method therefor | |
JP5835736B2 (ja) | 電力変換装置 | |
JP2011205771A (ja) | ハーフブリッジ型コンバータ | |
JP2020124091A (ja) | コントローラ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2013516049 Country of ref document: JP Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2012878216 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2012878216 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14125924 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12878216 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |