WO2014039798A8 - Light-driven hydroiodic acid splitting from semiconductive fuel generator - Google Patents

Light-driven hydroiodic acid splitting from semiconductive fuel generator Download PDF

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Publication number
WO2014039798A8
WO2014039798A8 PCT/US2013/058475 US2013058475W WO2014039798A8 WO 2014039798 A8 WO2014039798 A8 WO 2014039798A8 US 2013058475 W US2013058475 W US 2013058475W WO 2014039798 A8 WO2014039798 A8 WO 2014039798A8
Authority
WO
WIPO (PCT)
Prior art keywords
subchamber
semiconductive
driven
light
hydroiodic acid
Prior art date
Application number
PCT/US2013/058475
Other languages
French (fr)
Other versions
WO2014039798A1 (en
Inventor
Shane ARDO
Nathan S. Lewis
Original Assignee
California Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2013/035171 external-priority patent/WO2013152132A1/en
Application filed by California Institute Of Technology filed Critical California Institute Of Technology
Publication of WO2014039798A1 publication Critical patent/WO2014039798A1/en
Publication of WO2014039798A8 publication Critical patent/WO2014039798A8/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
    • C25B1/00—Electrolytic production of inorganic compounds or non-metals
    • C25B1/50—Processes
    • C25B1/55—Photoelectrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

This disclosure provides a device, system and method device for generating hydrogen gas. The device comprises: a chamber compartmentalized to have a first subchamber / cell and a second subchamber / cell; an ionomer membrane sealably separating the first subchamber / cell and second subchamber / cell; a plurality of elongated structures; and a catalyst disposed on the surface of the elongated structures in the first subchamber, and a catalyst disposed on the backside of the elongated structures in the second subchamber.
PCT/US2013/058475 2012-09-06 2013-09-06 Light-driven hydroiodic acid splitting from semiconductive fuel generator WO2014039798A1 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261697422P 2012-09-06 2012-09-06
US61/697,422 2012-09-06
USPCT/US2013/035171 2013-04-03
PCT/US2013/035171 WO2013152132A1 (en) 2012-04-03 2013-04-03 Semiconductor structures for fuel generation
US13/856,353 US9947816B2 (en) 2012-04-03 2013-04-03 Semiconductor structures for fuel generation
US13/856,353 2013-04-03

Publications (2)

Publication Number Publication Date
WO2014039798A1 WO2014039798A1 (en) 2014-03-13
WO2014039798A8 true WO2014039798A8 (en) 2014-10-30

Family

ID=50237630

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/058475 WO2014039798A1 (en) 2012-09-06 2013-09-06 Light-driven hydroiodic acid splitting from semiconductive fuel generator

Country Status (1)

Country Link
WO (1) WO2014039798A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023539807A (en) 2020-08-27 2023-09-20 エイチ２ユー テクノロジーズ，インコーポレイテッド Fuel generation management system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060266642A1 (en) * 2005-03-14 2006-11-30 Barbar Akle Direct assembly process for fabrication of ionomeric polymer devices
KR20080091455A (en) * 2006-01-23 2008-10-13 히타치케미컬 리서치센터 인코포레이티드 Ionic polymer devices and methods of fabricating the same
FR2897204B1 (en) * 2006-02-07 2008-05-30 Ecole Polytechnique Etablissem VERTICAL TRANSISTOR STRUCTURE AND METHOD OF MANUFACTURE
US7888583B2 (en) * 2007-05-07 2011-02-15 Wisconsin Alumni Research Foundation Semiconductor nanowire thermoelectric materials and devices, and processes for producing same
CN102449828A (en) * 2009-04-07 2012-05-09 新加坡科技研究局 Membrane electrode assembly and method of forming the same

Also Published As

Publication number Publication date
WO2014039798A1 (en) 2014-03-13

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