WO2013171882A1 - 半導体モジュールおよび半導体装置 - Google Patents
半導体モジュールおよび半導体装置 Download PDFInfo
- Publication number
- WO2013171882A1 WO2013171882A1 PCT/JP2012/062683 JP2012062683W WO2013171882A1 WO 2013171882 A1 WO2013171882 A1 WO 2013171882A1 JP 2012062683 W JP2012062683 W JP 2012062683W WO 2013171882 A1 WO2013171882 A1 WO 2013171882A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor module
- semiconductor
- semiconductor element
- control board
- chassis
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 95
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 239000007787 solid Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000000465 moulding Methods 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/14—Mounting supporting structure in casing or on frame or rack
- H05K7/1422—Printed circuit boards receptacles, e.g. stacked structures, electronic circuit modules or box like frames
- H05K7/1427—Housings
- H05K7/1432—Housings specially adapted for power drive units or power converters
- H05K7/14322—Housings specially adapted for power drive units or power converters wherein the control and power circuits of a power converter are arranged within the same casing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the fixing screw hole formed in the mold resin needs to have a certain size. Therefore, by providing a region for forming the screw hole in the mold resin portion, downsizing of the semiconductor module is limited. Further, when fixing with a screw through a mold resin, since a long-term load is applied to the mold resin, it is necessary to consider deformation due to a creep phenomenon.
- the present invention has been made in view of the above, and it is an object of the present invention to obtain a semiconductor module capable of reducing the load applied to the mold resin and enabling fixing to a fixing target while further reducing the size.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
図1は、本発明の実施の形態1にかかる半導体装置の概略構成を示す平面図である。図2は、図1に示すA-A線に沿った矢視断面図である。半導体装置20は、半導体モジュール7とシャーシ(固定対象)9とを備え、半導体モジュール7がシャーシ9に固定される。半導体モジュール7は、図2に示すように、半導体素子1と、リードフレーム(載置フレーム)2と、絶縁シート3と、シールド板4と、制御基板5と、放熱部品6と、モールド樹脂8を備える。
2 リードフレーム(載置フレーム)
3 絶縁シート
4 シールド板(ベタパターン)
5 制御基板
5a 固定基部
6 放熱部品
7 半導体モジュール
8 モールド樹脂
9 シャーシ(固定対象)
10 ネジ穴
11 ねじ
12 アース
13 スペーサ
14 制御部品
20 半導体装置
Claims (7)
- 半導体素子と、前記半導体素子が載置される載置フレームと、前記半導体素子を制御する制御部品が実装される制御基板と、前記半導体素子、前記載置フレーム、および前記制御基板を一括でモールドするモールド樹脂と、を備える半導体モジュールであって、
前記制御基板には、前記モールド樹脂から露出して、前記半導体モジュールを固定対象に固定させる固定基部が設けられていることを特徴とする半導体モジュール。 - 前記固定基部は、少なくとも前記モールド樹脂を挟んだ一方側と他方側に露出するように複数設けられることを特徴とする請求項1に記載の半導体モジュール。
- 前記固定基部には、ネジ穴が形成されることを特徴とする請求項1または2に記載の半導体モジュール。
- 前記半導体素子は、ワイドバンドギャップ半導体素子であることを特徴とする請求項1~3のいずれか1つに記載の半導体モジュール。
- 前記載置フレームは、前記制御基板の前記制御部品が実装される面の反対面側に配置され、
前記制御基板の前記制御部品が実装される面の反対面には、ベタパターンが形成されることを特徴とする請求項1~4のいずれか1つに記載の半導体モジュール。 - 前記ベタパターンは、アースに接続されることを特徴とする請求項5に記載の半導体モジュール。
- 請求項1~6のいずれか1つに記載の半導体モジュールと、
前記固定対象としての金属製のシャーシと、を備え、
前記半導体モジュールを前記シャーシに固定することで、前記モールド樹脂が前記シャーシに密着することを特徴とする半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/378,420 US20150001702A1 (en) | 2012-05-17 | 2012-05-17 | Semiconductor module and semiconductor device |
PCT/JP2012/062683 WO2013171882A1 (ja) | 2012-05-17 | 2012-05-17 | 半導体モジュールおよび半導体装置 |
EP12876775.3A EP2851945A4 (en) | 2012-05-17 | 2012-05-17 | SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE |
CN201280072900.6A CN104272454A (zh) | 2012-05-17 | 2012-05-17 | 半导体模块以及半导体装置 |
JP2013513891A JP5318304B1 (ja) | 2012-05-17 | 2012-05-17 | 半導体モジュールおよび半導体装置 |
KR1020147027611A KR101595685B1 (ko) | 2012-05-17 | 2012-05-17 | 반도체 모듈 및 반도체 장치 |
TW102110617A TWI511242B (zh) | 2012-05-17 | 2013-03-26 | 半導體模組及半導體裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/062683 WO2013171882A1 (ja) | 2012-05-17 | 2012-05-17 | 半導体モジュールおよび半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013171882A1 true WO2013171882A1 (ja) | 2013-11-21 |
Family
ID=49583324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/062683 WO2013171882A1 (ja) | 2012-05-17 | 2012-05-17 | 半導体モジュールおよび半導体装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20150001702A1 (ja) |
EP (1) | EP2851945A4 (ja) |
JP (1) | JP5318304B1 (ja) |
KR (1) | KR101595685B1 (ja) |
CN (1) | CN104272454A (ja) |
TW (1) | TWI511242B (ja) |
WO (1) | WO2013171882A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10629521B2 (en) * | 2014-04-08 | 2020-04-21 | Mitsubishi Electric Corporation | Molded module |
US10607300B1 (en) | 2015-07-31 | 2020-03-31 | Intuit Inc. | Ad hoc electronic messaging using financial transaction data |
JP7193730B2 (ja) * | 2019-03-26 | 2022-12-21 | 三菱電機株式会社 | 半導体装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002009264A (ja) * | 2000-06-19 | 2002-01-11 | Chinon Ind Inc | 固体撮像素子および撮像装置 |
JP2005039118A (ja) * | 2003-07-17 | 2005-02-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2006054245A (ja) | 2004-08-10 | 2006-02-23 | Mitsubishi Electric Corp | 半導体装置 |
JP2007081442A (ja) * | 1998-10-05 | 2007-03-29 | Fuji Electric Device Technology Co Ltd | 半導体素子のパッケージおよびその製造方法 |
JP2011044452A (ja) * | 2009-08-19 | 2011-03-03 | Denso Corp | 電子装置およびその製造方法 |
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JPS55143054A (en) * | 1979-04-25 | 1980-11-08 | Hitachi Ltd | Resin sealed semiconductor device |
JP4218193B2 (ja) * | 2000-08-24 | 2009-02-04 | 三菱電機株式会社 | パワーモジュール |
US6783592B2 (en) * | 2002-10-10 | 2004-08-31 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations |
JP4100332B2 (ja) * | 2003-11-12 | 2008-06-11 | 株式会社デンソー | 電子装置およびその製造方法 |
JP4825259B2 (ja) * | 2008-11-28 | 2011-11-30 | 三菱電機株式会社 | 電力用半導体モジュール及びその製造方法 |
JP5556072B2 (ja) * | 2009-01-07 | 2014-07-23 | ソニー株式会社 | 半導体装置、その製造方法、ミリ波誘電体内伝送装置 |
JP2010245174A (ja) * | 2009-04-02 | 2010-10-28 | Denso Corp | 電子制御ユニット及びその製造方法 |
JP5675610B2 (ja) * | 2009-07-24 | 2015-02-25 | 株式会社東芝 | 窒化珪素製絶縁シートおよびそれを用いた半導体モジュール構造体 |
DE102011000374A1 (de) * | 2010-01-29 | 2011-08-04 | DENSO CORPORATION, Aichi-pref. | Wasserdichte Struktur für Halbleitergehäuse |
IT1402168B1 (it) * | 2010-06-30 | 2013-08-28 | St Microelectronics Srl | Metodo di fabbricazione di un dispositivo elettronico impermeabilizzato e dispositivo elettronico impermeabilizzato |
US9331001B2 (en) * | 2010-09-02 | 2016-05-03 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
TW201216418A (en) * | 2010-10-04 | 2012-04-16 | Walton Advanced Eng Inc | Built-in radio frequency package for reducing interference |
-
2012
- 2012-05-17 JP JP2013513891A patent/JP5318304B1/ja not_active Expired - Fee Related
- 2012-05-17 EP EP12876775.3A patent/EP2851945A4/en not_active Withdrawn
- 2012-05-17 KR KR1020147027611A patent/KR101595685B1/ko not_active IP Right Cessation
- 2012-05-17 WO PCT/JP2012/062683 patent/WO2013171882A1/ja active Application Filing
- 2012-05-17 CN CN201280072900.6A patent/CN104272454A/zh active Pending
- 2012-05-17 US US14/378,420 patent/US20150001702A1/en not_active Abandoned
-
2013
- 2013-03-26 TW TW102110617A patent/TWI511242B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007081442A (ja) * | 1998-10-05 | 2007-03-29 | Fuji Electric Device Technology Co Ltd | 半導体素子のパッケージおよびその製造方法 |
JP2002009264A (ja) * | 2000-06-19 | 2002-01-11 | Chinon Ind Inc | 固体撮像素子および撮像装置 |
JP2005039118A (ja) * | 2003-07-17 | 2005-02-10 | Mitsubishi Electric Corp | 半導体装置 |
JP2006054245A (ja) | 2004-08-10 | 2006-02-23 | Mitsubishi Electric Corp | 半導体装置 |
JP2011044452A (ja) * | 2009-08-19 | 2011-03-03 | Denso Corp | 電子装置およびその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of EP2851945A4 |
Also Published As
Publication number | Publication date |
---|---|
TW201351577A (zh) | 2013-12-16 |
JPWO2013171882A1 (ja) | 2016-01-07 |
CN104272454A (zh) | 2015-01-07 |
KR101595685B1 (ko) | 2016-02-18 |
JP5318304B1 (ja) | 2013-10-16 |
US20150001702A1 (en) | 2015-01-01 |
EP2851945A4 (en) | 2016-01-27 |
KR20140138248A (ko) | 2014-12-03 |
TWI511242B (zh) | 2015-12-01 |
EP2851945A1 (en) | 2015-03-25 |
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