WO2013165115A1 - Light emitting diode package and method for manufacturing same - Google Patents
Light emitting diode package and method for manufacturing same Download PDFInfo
- Publication number
- WO2013165115A1 WO2013165115A1 PCT/KR2013/003434 KR2013003434W WO2013165115A1 WO 2013165115 A1 WO2013165115 A1 WO 2013165115A1 KR 2013003434 W KR2013003434 W KR 2013003434W WO 2013165115 A1 WO2013165115 A1 WO 2013165115A1
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- WIPO (PCT)
- Prior art keywords
- lead frame
- light emitting
- emitting diode
- base part
- diode package
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000465 moulding Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims description 32
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- 238000007747 plating Methods 0.000 claims description 26
- 238000012545 processing Methods 0.000 claims description 17
- 238000005452 bending Methods 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 238000009718 spray deposition Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims description 2
- 239000004033 plastic Substances 0.000 abstract description 10
- 239000000919 ceramic Substances 0.000 abstract description 5
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- 230000017525 heat dissipation Effects 0.000 description 14
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Definitions
- the present invention relates to a light emitting diode package and a method of manufacturing the same, and more particularly, to a light emitting diode package and a method of manufacturing the same, which can implement a role of a terminal, a reflector, and a heat dissipation by forming a metal part serving as a housing. .
- PN type light emitting diodes are semi-permanent, environmentally friendly, and are rapidly being replaced for backlights, landscapes, automobiles, and lighting due to their superior efficiency compared to traditional light sources.
- the structure of the conventional light emitting diode package of most PN types the conventional light emitting diode package separates the lead frame into an anode and a cathode, and combines an insulator molding using an injection molding resin on the separated lead frame. Done.
- the insulator molding serves as a reflector that insulates polarizations of the lead frame and at the same time reflects light generated from the light emitting diode.
- the anode and the cathode of the LED chip are mounted on the molded lead frame in a state where the polarization wires are bonded to each other of the lead frame, and the insulator molding on which the LED chip is mounted is subjected to silicon molding and then a lens is attached. .
- Such conventional light emitting diodes emit 70 to 80% of the supplied power as heat, and if the heat generated during the operation is not smooth, the efficiency and lifespan are drastically reduced.
- the most considered factor in the design of a conventional light emitting diode is the development of a light emitting diode package having low thermal resistance for high power illumination.
- the conventional light emitting diode serves as a peeling phenomenon and reflector due to plastic deterioration of the insulator molding due to an increase in temperature when the light emitting diode is driven. This results in problems such as a decrease in luminance due to discoloration of the insulator molding, and an expensive manufacturing cost when the insulator molding is composed of a ceramic.
- a metal such as copper (Cu) or aluminum (Al) having high thermal conductivity is used to maximize heat dissipation characteristics of the LED package. do.
- the present invention has been made to solve the above-mentioned problems, the technical problem to be solved is to replace the plastic housing molding or ceramic housing molding to serve as a collector and wrap around the conventional light emitting diode to a metal type to improve the heat dissipation performance It is to provide a light emitting diode package and a method of manufacturing the same that can significantly reduce the manufacturing cost while maximizing.
- a light emitting diode package including a base part for providing a seating space in which a light emitting diode chip is mounted, and one end of the light emitting diode package mounted on the light emitting diode chip.
- a lead frame including a housing part bent in a connected state and stacked on one surface of the base part; It includes.
- the LED package manufacturing method of the present invention for achieving the above technical problem is to form a first lead frame on one side by stripping the metal plate and to form a second lead frame spaced apart from the first lead frame on the other side.
- Metal plate processing step Bending the end of the first lead frame to form a first base part at the bottom, laminating a first housing part to the top of the first base part, and bending the side end of the second lead frame to form a second base part at the bottom;
- a lead frame molding step of molding the first lead frame and the second lead frames to integrally form the first lead frame and the second lead frames. It includes.
- the first housing part is stacked on the first base part and the second housing part is stacked on the second base part, so that all the components arranged closest to the light emitting diode chip are arranged as being thermally conductive. Maximizes the heat dissipation performance than the light emitting diode using the conventional plastic housing, thereby maximizing the heat dissipation performance, thereby preventing the deterioration of the light emitting diode chip to extend the life of the light emitting diode. .
- the present invention by forming a reflection surface using a plating layer on the surface of the first lead frame and the second lead frame, it is possible to improve the emission performance of light generated in the light emitting diode chip by the reflection surface of the plating layer, in this case, Since the plating layer is formed on the metal surfaces of the first lead frame and the second lead frame, the plating layer is not deformed or deteriorated by heat generated from the light emitting diode, and a reflective surface is formed on the plastic housing, thereby causing deterioration. Unlike this, there is an effect that can maintain the emission performance until the lifetime of the light emitting diode.
- the present invention forms a reflector surface consisting of an inclined surface of one side end of the first housing portion and one side of the second housing portion, in this case, the reflector surface is formed of an inclined shape of the metal layer, not plastic, so as not to deform and deteriorate Without reflecting the light generated from the light emitting diode chip has an effect of increasing the light emission efficiency.
- the present invention is formed in a form of bending a high-purity metal, when manufacturing a light emitting diode requiring high heat dissipation It has the effect of drastically reducing the manufacturing cost.
- the present invention is implemented in the form of bending the housing portion to be laminated to the base portion, it is possible to reduce the manufacturing process by reducing the pressing process than the conventional case, and separate the coupling of the lead frame and the housing as in the conventional case Since no process is required, the manufacturing cost is reduced.
- FIG. 1 is a perspective view of a light emitting diode package according to an embodiment of the present invention.
- FIG. 2 is a perspective view of a state in which the cross section of the light emitting diode package shown in FIG. 1 is cut away;
- FIG. 3 is a partial cross-sectional view of an enlarged state A shown in FIG. 2.
- FIG. 4 is a perspective view of a state in which the insulation member is removed from the light emitting diode package shown in FIG. 1.
- FIG. 5 is a perspective view of the lead frame shown in FIG. 4 unfolded.
- FIG. 6 is a perspective view of a state in which a lead frame shown in FIG. 5 is formed by stripping a metal sheet;
- FIG. 7 is a flow chart of a method of manufacturing a light emitting diode package according to an embodiment of the present invention.
- FIG. 8 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- FIG. 9 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- FIG. 10 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- FIG. 1 is a perspective view of a light emitting diode package according to an embodiment of the present invention.
- FIG. 2 is a perspective view of the light emitting diode package illustrated in FIG. 1, taken away in a cross section.
- 3 is a partial cross-sectional view of an enlarged state A shown in FIG. 2.
- 4 is a perspective view of a state in which the insulation member is removed from the light emitting diode package shown in FIG. 1.
- FIG. 5 is a perspective view of the lead frame shown in FIG. 4 in an unfolded state.
- FIG. 6 is a perspective view of a state in which the lead frame shown in FIG. 5 is formed by stripping a metal sheet.
- a light emitting diode package according to an embodiment of the present invention includes a lead frame 10 and an insulating member part 20.
- the lead frame 10 will be exemplified as including the first lead frame 11 and the second lead frame 12. That is, at least one lead frame 10 may be configured.
- the first lead frame 11 includes a first base part 11a and a first housing part 11b.
- the first lead frame 11 is formed of a metal material including at least one of copper, aluminum, zinc, and nickel having high thermal conductivity.
- the material of the first lead frame 11 is not limited to the above example, and the material of the first lead frame 11 may be formed of any conductive metal material.
- the first base portion 11a is formed in a plate shape.
- the shape of the first base portion 11a is not limited to the shape shown in the drawings, and of course, may be variously modified.
- the first base portion 11a serves to dissipate heat generated from the light emitting diode chip 1a while providing a mounting space in which the light emitting diode chip 1a is mounted.
- the first housing part 11b has a shape in which leg portions are formed at both side ends in the vicinity of the groove where the groove is formed at one side thereof. In this case, the first housing part 11b is bent in a state in which one side end is connected to one side end of the first base part 11a and stacked on one surface of the first base part 11a.
- the first housing part 11b is stacked in the first base part 11a and is disposed in a form that encloses a space in which the light emitting diode chip 1a is mounted. Therefore, the first housing part 11b reflects the light from the side surface generated from the light emitting diode chip 1a to improve the reflection efficiency and dissipate heat generated from the first base part 11a.
- the second lead frame 12 includes a second base part 12a and a second housing part 12b.
- the second lead frame 12 is formed of a metal material including at least one of copper, aluminum, zinc, and nickel having high thermal conductivity.
- the material of the second lead frame 12 is not limited to the above example, and the material of the second lead frame 12 may be formed of all conductive metal materials.
- the second base portion 12a is formed in a plate shape.
- the shape of the second base portion 12a is not limited to the shape shown in the drawings, and of course, may be variously modified.
- the second base portion 12a is spaced apart from the first base portion 11a to form an electric path different from the first base portion 11a.
- the second base portion 12a is formed by the first base portion 11a.
- the second housing part 12b has a shape in which leg portions are formed at both side ends in the vicinity of the groove where the groove is formed at one side thereof. In this case, the second housing part 12b is bent in a state in which one end thereof is connected to one end of the second base part 12a and stacked on one surface of the second base part 12a.
- the second housing part 12b is stacked in the second base part 12a and is disposed in a form to surround a space in which the light emitting diode chip 1a is mounted. Therefore, the second housing part 12b reflects light from the side surface generated from the light emitting diode chip 1a to improve reflection efficiency and dissipate heat generated from the second base part 12a.
- the insulating member 20 may be formed by molding the first base part 11a and the second base part 12a in a state where the first base part 11a and the second base part 12a are spaced apart from each other.
- the 11 and the second lead frame 12 are integrally coupled.
- the insulating member 20 may be formed outside the first housing part 11b and the second housing part 12b to improve the coupling force between the first lead frame 11 and the second lead frame 12. .
- the insulating member 20 does not play a role of reflecting light generated from the light emitting diode chip 1a, and replaces the first lead frame 11 and the second lead frame 12 with each other. Only the role of combining.
- the insulating member 20 may be made of a thermoplastic resin such as LCP, PCT, or PA, and a thermosetting resin such as silicon and epoxy.
- the molding method of the insulating member portion 20 is formed by insert injection molding the first lead frame 11 and the second lead frame 12, insert molding an insulator such as glass frit Coating in a manner or by dispensing the material of the insulating member.
- the first lead frame 11 may further include a first through hole 11c penetrating through the first base part 11a and the first housing part 11b, and the second lead frame 12 may be formed.
- a second through hole 12c penetrating through the second base portion 12a and the second housing portion 12b may be further formed.
- the insulating member portion 20 is filled in the first through hole 11c and the second through hole 12c. Therefore, since the insulating member 20 is coupled to the first lead frame 11 and the second lead frame 12 while penetrating the first lead frame 11 and the second lead frame 12, the first lead frame 11 and the second lead frame 12 are coupled to each other. Even when the housing part 11b and the second housing part 12b are overheated, the insulating member part 20 is prevented from being peeled off from the first lead frame 11 and the second lead frame 12.
- the first housing portion 11b is stacked on the first base portion 11a, and the second housing portion 12b is disposed on the second base portion 12a.
- the heat dissipation performance can be significantly improved compared to the conventional light emitting diodes. Therefore, the light emitting diode package according to the embodiment of the present invention maximizes the heat dissipation performance, thereby preventing deterioration of the light emitting diode chip 1a, thereby extending the life of the light emitting diode.
- the conventional light emitting diode is formed of only the metal on which the light emitting diode chip (1a) is seated, the light emitting diode chip (1a) Since the injection molding material of the plastic material is disposed near the side surface, the heat dissipation efficiency is inevitably lower than that of the LED package according to the embodiment of the present invention.
- the LED package according to an embodiment of the present invention may further include a plating layer (30).
- the plating layer 30 is formed by plating the surface of the first lead frame 11 and the surface of the second lead frame 12.
- the plating layer 30 may be formed including at least one of aluminum, gold or silver. Therefore, the surfaces of the first lead frame 11 and the second lead frame 12 form a reflective surface by the plating layer 30. Therefore, the light generated from the light emitting diode chip 1a may be reflected by the reflecting surface of the plating layer 30 to improve the reflectance.
- the plating layer 30 may include the first lead frame 11 and the second lead frame. Since it is formed on the metal surface of (12), it does not deform or deteriorate even by the heat which generate
- one side end of the first housing part 11b and one side end of the second housing part 12b form a reflector surface 31 formed of an inclined surface.
- the reflector surface 31 may be formed by pressing using a press or cutting using a cutting tool. Since the reflector surface 31 is formed of an inclined metal layer rather than plastic, the reflector surface 31 reflects the light generated from the light emitting diode chip 1a without deformation and deterioration, thereby increasing the light emission efficiency.
- FIG. 7 is a flowchart illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.
- the LED package according to an embodiment of the present invention includes a metal plate processing step S10, a lead frame bending step S20, and a lead frame molding step S30.
- the metal plate processing step S10 is performed by stripping the metal plate 1b to form a first lead frame 11 on one side and a second spaced apart from the first lead frame 11 on the other side.
- the lead frame 12 is formed.
- the metal plate 1b may form a plurality of first lead frames 11 and second lead frames 12, and strip the first lead frames 11 and the second lead frames 12.
- the first lead frame 11 and the second lead frame 12 may be stripped in such a manner as to support a part without completely falling off the metal plate 1b.
- the strip method may be made of sheet metal processing or cutting by stamping using a press die.
- the lead frame bending step S20 as shown in FIG. 5, the side end of the first lead frame 11 is bent to form a first base part 11a at a lower part and an upper part of the first base part 11a.
- the first housing part 11b is stacked on the substrate, and the second end part 12a is formed at the lower part by bending the side end of the second lead frame 12, and the second housing part is formed on the upper part of the second base part 12a.
- the lead frame bending step S20 may be performed by a stamping process and a bending process.
- the first lead frame 11 and the second lead frame 12 are molded by molding the first lead frame 11 and the second lead frame 12, as shown in FIG. 1. It is a step of forming integrally.
- the molding method since the molding method has been described above, it will not be repeated.
- the first housing part 11b and the second housing part 12b are made of metal to maximize heat dissipation performance.
- a separate metal is laminated or a ceramic housing is formed.
- the method of manufacturing a light emitting diode package according to an embodiment of the present invention does not take a method as in the prior art and uses a high purity metal. Since it is formed in a bent form, the manufacturing cost can be drastically reduced when manufacturing a light emitting diode requiring high heat dissipation.
- the LED package manufacturing method according to an embodiment of the present invention is implemented in a form in which the housing part is bent and laminated on the base part, the manufacturing process can be reduced by reducing the press process than in the conventional case, and in the conventional case As such, there is no need for a separate process of coupling the lead frame 10 and the housing, thereby reducing manufacturing costs.
- the LED package manufacturing method according to an embodiment of the present invention may further proceed to the reflector surface processing step (S40) when the metal plate processing step (S10).
- the reflector surface processing step (S40) may be selectively configured.
- the reflector surface processing step S40 is a step of forming an inclined surface by processing side ends of the first housing part 11b and side ends of the second housing part 12b.
- the reflector surface processing step (S40) may be performed at the same time as the process of proceeding the strip in the metal plate processing step (S10), or by a cutting process after the strip of the metal plate.
- an inclined surface is formed on the first housing part 11b and the second housing part 12b to reflect light generated from the light emitting diode chip 1a, thereby improving light emission performance. have.
- the LED package manufacturing method according to an embodiment of the present invention may further proceed with the plating step (S50) after the lead frame bending step (S20).
- the plating step (S50) may be selectively configured.
- the plating layer 30 is formed on the first lead frame 11 and the second lead frame 12.
- the plating layer 30 may include at least one of aluminum, gold, or silver, and the plating layer 30 may include at least any one of electroplating, sputtering deposition, vacuum deposition, and spray deposition. It can be done in one way.
- the plating layer 30 having good reflectance of light is formed on the surface of the first lead frame 11 and the surface of the second lead frame 12, thereby maximizing light emission performance.
- a plastic housing since a plastic housing is used, a metal surface with good reflectance cannot be formed as in the present invention.
- FIG. 8 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- the light emitting diode package shown in FIG. 8 is formed in the same configuration as the light emitting diode package of the above-described embodiment, and the difference is that the first housing part 11b and the second housing part 12b are each of the first base part 11a. In the case where the first and second housing parts 11b and 12b are stacked on the second base part 12a, the areas facing each other are formed in a circular shape.
- the first housing part 11b and the second housing part 12b face each other in a rectangular shape.
- the LED package according to another embodiment of the present invention is not limited to the rectangular or circular area where the first housing portion 11b and the second housing portion 12b face each other. It will be apparent to those skilled in the art that various modifications may be made.
- FIG. 9 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- a light emitting diode package according to another embodiment of the present invention shown in FIG. 9 is a perspective view of a state in which the terminal unit 50 is further added in the embodiment of the light emitting diode package shown in FIG. 1.
- the terminal portion 50 extends outside the first base portion and the second base portion.
- the terminal unit 50 serves to provide a soldered space when the LED package is mounted on the PCB.
- the shape of the terminal portion 50 may be formed in a square, a circular shape, or a shape in which grooves or holes are formed in the respective shapes, but the shape of the terminal portion 50 is not limited in the present invention.
- FIG. 10 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- a light emitting diode package according to another embodiment of the present invention shown in FIG. 10 is a perspective view of a state in which a third lead frame 60 is further added in the embodiment of the light emitting diode package shown in FIG. 1.
- the third lead frame 60 is disposed between the first lead frame 11 and the second lead frame 12, spaced apart from the first lead frame 11 and the second lead frame 12, in this case
- the insulating member 20 fills the gap between the third lead frame 60, the first lead frame 11, and the second lead frame 12.
- the third lead frame 60 is spaced apart from the first lead frame 11 and the second lead frame 12 to form a third polarization. That is, it can be seen that the light emitting diode package according to another embodiment of the present invention can be applied to a light emitting diode of three poles by changing from a light emitting diode of two poles as in the above-described embodiment.
- FIG. 11 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- the LED package according to another embodiment of the present invention forms the second reflector surface 31b in the embodiment shown in FIG. 1.
- the second reflector surface 31b is formed to protrude upward from the outer portions of the first housing portion 11b and the second housing portion 12b, in which case the second reflector surface 31b. ) Is formed to be inclined, and the above-described plating layer may be further formed.
- the housing part is formed of a metal material
- the second reflector surface 31b may be further formed, thereby maximizing the emission performance of light generated from the light emitting diode chip 1a.
- FIG. 12 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
- the two-stage reflector surface 31c is formed on the first reflector surface in the embodiment shown in FIG. 1.
- the above-described plating layer may be further formed on the two-stage reflector surface 31c.
- the two-stage reflector surface 31c is formed on the reflector 31, the light emission performance of the light emitted from the light emitting diode chip 1a can be maximized.
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- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a light emitting diode package and a method for manufacturing the same, and the objective of the present invention is to provide the light emitting diode package and the method for manufacturing the same, which can significantly reduce manufacturing costs and can maximize radiation performance by replacing a plastic housing molding or a ceramic housing molding, which surround existing light emitting diodes and function as a refractor, with a metal-type housing molding. To this end, the light emitting diode package for mounting a light emitting diode chip comprises: a base portion which provides a mounting space having the light emitting diode chip mounted thereon; and a lead frame which comprises a housing portion having one end of which is bent and connected to one end of the base portion and is stacked on one side of the base portion.
Description
본 발명은 발광 다이오드 패키지 및 그 제조 방법에 관한 것으로, 보다 상세하게는 하우징역할을 하는 부위를 금속으로 형성하여 단자 역할과 리플렉터 역할 및 방열 역할을 구현할 수 있는 발광 다이오드 패키지 및 그 제조 방법에 관한 것이다.The present invention relates to a light emitting diode package and a method of manufacturing the same, and more particularly, to a light emitting diode package and a method of manufacturing the same, which can implement a role of a terminal, a reflector, and a heat dissipation by forming a metal part serving as a housing. .
종래 PN타입의 발광 다이오드는 수명이 반영구적, 환경 친화적이며, 전통적인 광원에 비하여 효율이 우수한 특성으로 인하여 backlight, 경관, 자동차, 및 조명용으로 급속도로 대체되어 가고 있다. Conventional PN type light emitting diodes are semi-permanent, environmentally friendly, and are rapidly being replaced for backlights, landscapes, automobiles, and lighting due to their superior efficiency compared to traditional light sources.
현재, 상용화된 대부분의 PN타입의 종래 발광 다이오드 패키지를 이루는 구성을 살펴보면, 종래 발광 다이오드 패키지는 리드프레임을 에노드와 캐소드로 분리시키고, 분리된 리드프레임에 사출성형용 수지를 이용한 절연체 몰딩을 결합하게 된다.At present, the structure of the conventional light emitting diode package of most PN types, the conventional light emitting diode package separates the lead frame into an anode and a cathode, and combines an insulator molding using an injection molding resin on the separated lead frame. Done.
이 경우, 절연체 몰딩은 리드프레임의 분극들을 절연함과 동시에 발광 다이오드에서 발생하는 광을 반사시키는 리플렉터의 역할을 수행하게 된다.In this case, the insulator molding serves as a reflector that insulates polarizations of the lead frame and at the same time reflects light generated from the light emitting diode.
이후, 몰딩된 리드프레임에는 발광 다이오드 칩의 에노드와 캐소드를 리드프레임의 각각의 분극 와이어 본딩시킨 상태로 실장시키고, 발광 다이오드 칩이 실장된 절연체 몰딩에는 실리콘 몰딩을 진행한 이후 렌즈를 부착하게 된다.Thereafter, the anode and the cathode of the LED chip are mounted on the molded lead frame in a state where the polarization wires are bonded to each other of the lead frame, and the insulator molding on which the LED chip is mounted is subjected to silicon molding and then a lens is attached. .
이러한 종래 발광 다이오드는 공급된 전력의 70~80%가 열로 방출되며, 이러한 동작 중 발생한 열의 방출이 원활하지 않을 경우 효율 및 수명의 급격한 감소를 가져오게 된다.Such conventional light emitting diodes emit 70 to 80% of the supplied power as heat, and if the heat generated during the operation is not smooth, the efficiency and lifespan are drastically reduced.
따라서, 종래 발광 다이오드의 설계시 가장 고려되고 있는 요인은 바로 고출력 조명을 위하여 낮은 열저항을 갖는 발광 다이오드 패키지의 개발이다.Therefore, the most considered factor in the design of a conventional light emitting diode is the development of a light emitting diode package having low thermal resistance for high power illumination.
하지만, 현재, 종래 발광 다이오드는 리드프레임의 분극을 분리하는 절연체 몰딩이 리플렉터 역할을 수행하기 때문에, 발광 다이오드의 구동 시 온도 증가에 따른 절연체 몰딩의 플라스틱(plastic) 열화로 인한 박리 현상, 리플렉터 역할을 하는 절연체 몰딩의 변색에 따른 휘도 저하 및, 절연체 몰딩을 세락믹으로 구성하는 경우에 고비용의 제조 단가를 요구하게 되는등의 문제점들을 야기하고 있다.However, at present, since the insulator molding that separates the polarization of the lead frame serves as a reflector, the conventional light emitting diode serves as a peeling phenomenon and reflector due to plastic deterioration of the insulator molding due to an increase in temperature when the light emitting diode is driven. This results in problems such as a decrease in luminance due to discoloration of the insulator molding, and an expensive manufacturing cost when the insulator molding is composed of a ceramic.
한편, 리드프레임의 열전도도를 향상시킴으로써 방열성능을 높이기 위한 종래 발광 다이오드의 경우에는 열전도도가 높은 구리(Cu)나 알루미늄(Al)과 같은 금속을 사용함으로써, 발광 다이오드 패키지의 방열 특성을 극대화하게 된다. Meanwhile, in the case of a conventional light emitting diode for improving heat dissipation performance by improving thermal conductivity of a lead frame, a metal such as copper (Cu) or aluminum (Al) having high thermal conductivity is used to maximize heat dissipation characteristics of the LED package. do.
이러한 종래 발광 다이오드 패키지의 일 예로써, 대한민국 공개 특허 번호 10-2009-0046316호의 종래 기술에서는 금속 분말을 유기 바인더와 혼합하여 사출한 후, 바인더를 제거하고 소결시킨 상태로 발광 다이오드 패키지를 제고하게 되는데, 이 경우, 단순한 사출성형만으로는 매끄러운 외관이 나오지 않아 2차 가공으로 외관의 치수 등을 다시 조절하는 문제에 의해 제조 비용이 많이 소요되는 문제점과, 금속성형물 내에 불순물이 남아있어 열 전달 특성의 저하를 가져오는 문제점 및, 전극으로 사용되는 리드프레임과, 상기 리드프레임을 감싸는 하우징부를 별도로 제작해야하는 문제점들을 야기시키고 있다.As an example of such a conventional light emitting diode package, in the prior art of the Republic of Korea Patent No. 10-2009-0046316, the metal powder is injected and mixed with an organic binder, and then the light emitting diode package is improved while the binder is removed and sintered. In this case, a simple injection molding alone does not produce a smooth appearance, and the manufacturing process is expensive due to the problem of re-adjusting the dimensions of the appearance by the secondary processing, and impurities in the metal molding remain to reduce the heat transfer characteristics. The problem of bringing, and the lead frame used as an electrode, and the problem of having to manufacture a housing part surrounding the lead frame separately.
본 발명은 상기와 같은 제반 문제점을 해결하기 위하여 창안된 것으로서, 해결하고자 하는 기술적 과제는 종래 발광 다이오드의 주변을 감싸며 리프렉터 역할을 하는 플라스틱 하우징 몰딩 또는 세라믹 하우징 몰딩을 금속타입으로 대체시켜 방열성능을 극대화시키면서 제조단가를 획기적으로 절감시킬 수 있는 발광 다이오드 패키지 및 그 제조 방법을 제공하는 데 있다.The present invention has been made to solve the above-mentioned problems, the technical problem to be solved is to replace the plastic housing molding or ceramic housing molding to serve as a collector and wrap around the conventional light emitting diode to a metal type to improve the heat dissipation performance It is to provide a light emitting diode package and a method of manufacturing the same that can significantly reduce the manufacturing cost while maximizing.
상기한 기술적 과제를 달성하기 위한 본 발명의 발광 다이오드 패키지는 발광 다이오드 칩을 실장시키는 발광 다이오드 패키지에 있어서, 발광 다이오드 칩이 실장되는 안착공간을 제공하는 베이스부 및, 일측단이 상기 베이스부의 일측단과 연결된 상태로 절곡되어 상기 베이스부의 일면에 적층되는 하우징부를 포함하는 리드프레임; 를 포함한다.According to an aspect of the present invention, there is provided a light emitting diode package including a base part for providing a seating space in which a light emitting diode chip is mounted, and one end of the light emitting diode package mounted on the light emitting diode chip. A lead frame including a housing part bent in a connected state and stacked on one surface of the base part; It includes.
또한, 상기한 기술적 과제를 달성하기 위한 본 발명의 발광 다이오드 패키지 제조 방법은 금속판재를 스트립하여 일측에 제1리드프레임을 형성하고 타측에 상기 제1리드프레임과 이격되는 제2리드프레임을 형성하는 금속판재가공단계; 상기 제1리드프레임의 측단을 절곡하여 하부에 제1베이스부를 형성하고 상기 제1베이스부의 상부에 제1하우징부를 적층하며, 상기 제2리드프레임의 측단을 절곡하여 하부에 제2베이스부를 형성하고 상기 제2베이스부의 상부에 제2하우징부를 적층하는 리드프레임절곡단계; 및, 상기 제1리드프레임과 상기 제2리드프레임들을 몰딩하여 상기 제1리드프레임과 상기 제2리드프레임들을 일체형으로 형성하는 리드프레임몰딩단계; 을 포함한다.In addition, the LED package manufacturing method of the present invention for achieving the above technical problem is to form a first lead frame on one side by stripping the metal plate and to form a second lead frame spaced apart from the first lead frame on the other side. Metal plate processing step; Bending the end of the first lead frame to form a first base part at the bottom, laminating a first housing part to the top of the first base part, and bending the side end of the second lead frame to form a second base part at the bottom; A lead frame bending step of stacking a second housing part on the second base part; And a lead frame molding step of molding the first lead frame and the second lead frames to integrally form the first lead frame and the second lead frames. It includes.
본 발명은 제1베이스부에 제1하우징부가 적층되고 제2베이스부에 제2하우징부가 적층되어 발광 다이오드 칩에 가장 가깝게 배열되는 모든 구성은 열전도성이 있는 것으로 배치되므로, 열을 방출시키는 면적이 최대화되어 종래 플라스틱 하우징을 이용하는 발광 다이오드보다 방열성능을 대폭으로 향상시키는 효과를 발휘하며, 이로 인해 방열성능이 극대화되어 발광 다이오드 칩의 열화등을 방지하여 발광 다이오드의 수명을 연장시키는 효과를 발휘하게 된다.According to the present invention, the first housing part is stacked on the first base part and the second housing part is stacked on the second base part, so that all the components arranged closest to the light emitting diode chip are arranged as being thermally conductive. Maximizes the heat dissipation performance than the light emitting diode using the conventional plastic housing, thereby maximizing the heat dissipation performance, thereby preventing the deterioration of the light emitting diode chip to extend the life of the light emitting diode. .
또한, 본 발명은 제1리드프레임과 제2리드프레임의 표면에 도금층을 이용한 반사면을 형성함으로써, 도금층의 반사면에 의해 발광 다이오드 칩에서 발생되는 광의 방출성능을 향상시킬 수 있으며, 이 경우, 도금층은 제1리드프레임과 제2리드프레임의 금속 표면에 형성되므로, 발광 다이오드에서 발생하는 열에 의해서도 변형이나 열화되지 않게 되어, 플라스틱 하우징에 반사면이 형성되어 필수적으로 열화가 발생하는 종래 발광 다이오드와는 달리 발광 다이오드의 수명이 다하는 때까지 방출성능을 유지할 수 있는 효과가 있다.In addition, the present invention by forming a reflection surface using a plating layer on the surface of the first lead frame and the second lead frame, it is possible to improve the emission performance of light generated in the light emitting diode chip by the reflection surface of the plating layer, in this case, Since the plating layer is formed on the metal surfaces of the first lead frame and the second lead frame, the plating layer is not deformed or deteriorated by heat generated from the light emitting diode, and a reflective surface is formed on the plastic housing, thereby causing deterioration. Unlike this, there is an effect that can maintain the emission performance until the lifetime of the light emitting diode.
또한, 본 발명은 제1하우징부의 일측단과 제2하우징부의 일측단이 경사면으로 이루어진 리플렉터면을 형성하게 되며, 이 경우, 리플렉터면은 플라스틱이 아닌 금속층이 경사진 형태로 형성되므로, 변형 및 열화되지 않고도 발광 다이오드 칩에서 발생되는 광을 반사시켜 광의 방출효율을 증대시키는 효과를 발휘하게 된다.In addition, the present invention forms a reflector surface consisting of an inclined surface of one side end of the first housing portion and one side of the second housing portion, in this case, the reflector surface is formed of an inclined shape of the metal layer, not plastic, so as not to deform and deteriorate Without reflecting the light generated from the light emitting diode chip has an effect of increasing the light emission efficiency.
또한, 본 발명은 방열 성능을 극대화시키기 위하여 별도의 금속을 적층하거나 세라믹 하우징을 형성하는 종래의 경우와는 달리, 고순도의 금속을 절곡하는 형태로 형성하므로, 고방열을 요구하는 발광 다이오드의 제조시 제조비용을 획기적으로 절감시키는 효과가 있다.In addition, unlike the conventional case of stacking a separate metal or forming a ceramic housing in order to maximize the heat dissipation performance, the present invention is formed in a form of bending a high-purity metal, when manufacturing a light emitting diode requiring high heat dissipation It has the effect of drastically reducing the manufacturing cost.
또한, 본 발명은 하우징부를 절곡하여 베이스부에 적층하는 형태로 구현되므로, 종래의 경우보다 프레스 공정을 줄어들게 하여 제조비용을 절감시킬 수 있으며, 종래의 경우와 같이 리드프레임과 하우징을 결합시키는 별도의 공정이 필요치 않아 제조비용을 절감시키는 효과가 있다.In addition, since the present invention is implemented in the form of bending the housing portion to be laminated to the base portion, it is possible to reduce the manufacturing process by reducing the pressing process than the conventional case, and separate the coupling of the lead frame and the housing as in the conventional case Since no process is required, the manufacturing cost is reduced.
도 1은 본 발명의 일 실시예에 따른 발광 다이오드 패키지의 사시도.1 is a perspective view of a light emitting diode package according to an embodiment of the present invention.
도 2는 도 1에 도시된 발광 다이오드 패키지의 단면을 절개하여 본 상태의 사시도.FIG. 2 is a perspective view of a state in which the cross section of the light emitting diode package shown in FIG. 1 is cut away; FIG.
도 3은 도 2에 도시된 A영역을 확대한 상태의 부분 단면도.FIG. 3 is a partial cross-sectional view of an enlarged state A shown in FIG. 2. FIG.
도 4는 도 1에 도시된 발광 다이오드 패키지에서 절연부재부를 제거한 상태의 사시도.4 is a perspective view of a state in which the insulation member is removed from the light emitting diode package shown in FIG. 1.
도 5는 도 4에 도시된 리드 프레임을 펼친 상태의 사시도.FIG. 5 is a perspective view of the lead frame shown in FIG. 4 unfolded. FIG.
도 6는 금속판재를 스트립하여 도 5에 도시된 리드 프레임을 형성한 상태의 사시도.FIG. 6 is a perspective view of a state in which a lead frame shown in FIG. 5 is formed by stripping a metal sheet; FIG.
도 7은 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법의 순서도. 7 is a flow chart of a method of manufacturing a light emitting diode package according to an embodiment of the present invention.
도 8은 본 발명의 다른 실시예에 따른 발광 다이오드 패키지의 사시도.8 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 9는 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시도.9 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 10은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시도.10 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
이하, 첨부된 도면을 참조하여 본 발명에 따른 실시예를 상세히 설명하기로 한다. 이하의 설명에서는 다양한 실시예에 대해 설명하는 경우, 동일한 구성에 대해서는 동일 도면부호로 도시하기로 하며, 이에 대한 중복적인 설명은 생략하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, when the various embodiments are described, the same components will be denoted by the same reference numerals, and redundant description thereof will be omitted.
도 1은 본 발명의 일 실시예에 따른 발광 다이오드 패키지의 사시도이다. 도 2는 도 1에 도시된 발광 다이오드 패키지의 단면을 절개하여 본 상태의 사시도이다. 도 3은 도 2에 도시된 A영역을 확대한 상태의 부분 단면도이다. 도 4는 도 1에 도시된 발광 다이오드 패키지에서 절연부재부를 제거한 상태의 사시도이다. 도 5는 도 4에 도시된 리드 프레임을 펼친 상태의 사시도이다. 도 6는 금속판재를 스트립하여 도 5에 도시된 리드 프레임을 형성한 상태의 사시도이다.1 is a perspective view of a light emitting diode package according to an embodiment of the present invention. FIG. 2 is a perspective view of the light emitting diode package illustrated in FIG. 1, taken away in a cross section. 3 is a partial cross-sectional view of an enlarged state A shown in FIG. 2. 4 is a perspective view of a state in which the insulation member is removed from the light emitting diode package shown in FIG. 1. FIG. 5 is a perspective view of the lead frame shown in FIG. 4 in an unfolded state. FIG. 6 is a perspective view of a state in which the lead frame shown in FIG. 5 is formed by stripping a metal sheet.
도 1 내지 도 5에 도시된 바와 같이, 본 발명의 일 실시예에 따른 발광 다이오드 패키지는 리드프레임(10) 및, 절연부재부(20)를 포함한다.1 to 5, a light emitting diode package according to an embodiment of the present invention includes a lead frame 10 and an insulating member part 20.
상기 리드프레임(10)은 본 실시예의 경우, 제1리드프레임(11) 및 제2리드프레임(12)을 포함하는 것으로 예시하기로 한다. 즉, 리드프레임(10)은 적어도 하나 이상 구성될 수 있다.In the present embodiment, the lead frame 10 will be exemplified as including the first lead frame 11 and the second lead frame 12. That is, at least one lead frame 10 may be configured.
상기 제1리드프레임(11)은 제1베이스부(11a) 및 제1하우징부(11b)를 포함한다. 여기서, 제1리드프레임(11)은 열전도성이 강한 구리, 알루미늄, 아연 및, 니켈 가운데 적어도 어느 하나를 포함한 금속재질로 형성된다. 하지만, 본 발명에서 제1리드프레임(11)에 재질을 상기한 예로 한정하는 것은 아니며, 제1리드프레임(11)의 재질은 전도성이 있는 모든 금속재질로 형성될 수 있다.The first lead frame 11 includes a first base part 11a and a first housing part 11b. Here, the first lead frame 11 is formed of a metal material including at least one of copper, aluminum, zinc, and nickel having high thermal conductivity. However, in the present invention, the material of the first lead frame 11 is not limited to the above example, and the material of the first lead frame 11 may be formed of any conductive metal material.
상기 제1베이스부(11a)는 판형상으로 형성된다. 여기서, 제1베이스부(11a)의 형상은 도면에 도시된 형상에 한정되지 않고, 다양하게 변형될 수 있음은 물론이다. 이러한 제1베이스부(11a)는 발광 다이오드 칩(1a)이 실장되는 안착공간을 제공함과 동시에 발광 다이오드 칩(1a)에서 발생되는 열을 방열하는 역할을 하게 된다.The first base portion 11a is formed in a plate shape. Here, the shape of the first base portion 11a is not limited to the shape shown in the drawings, and of course, may be variously modified. The first base portion 11a serves to dissipate heat generated from the light emitting diode chip 1a while providing a mounting space in which the light emitting diode chip 1a is mounted.
상기 제1하우징부(11b)는 일측부에 홈이 형성됨으로써, 홈이 형성되는 부근의 양측단에 다리부가 형성되는 형상으로 이루어진다. 이 경우, 제1하우징부(11b)는 일측단이 제1베이스부(11a)의 일측단과 연결된 상태로 절곡되어 제1베이스부(11a)의 일면에 적층된다. 이러한 제1하우징부(11b)는 제1베이스부(11a)에서 적층됨으로써, 발광 다이오드 칩(1a)이 실장되는 공간을 감싸는 형태로 배치된다. 따라서, 제1하우징부(11b)는 발광 다이오드 칩(1a)에서 발생하는 측면의 광을 반사시켜 반사효율을 향상시킴과 동시에, 제1베이스부(11a)에서 발생하는 열을 방열하게 된다.The first housing part 11b has a shape in which leg portions are formed at both side ends in the vicinity of the groove where the groove is formed at one side thereof. In this case, the first housing part 11b is bent in a state in which one side end is connected to one side end of the first base part 11a and stacked on one surface of the first base part 11a. The first housing part 11b is stacked in the first base part 11a and is disposed in a form that encloses a space in which the light emitting diode chip 1a is mounted. Therefore, the first housing part 11b reflects the light from the side surface generated from the light emitting diode chip 1a to improve the reflection efficiency and dissipate heat generated from the first base part 11a.
상기 제2리드프레임(12)은 제2베이스부(12a) 및 제2하우징부(12b)를 포함한다. 여기서, 제2리드프레임(12)은 열전도성이 강한 구리, 알루미늄, 아연 및, 니켈 가운데 적어도 어느 하나를 포함한 금속재질로 형성된다. 하지만, 본 발명에서 제2리드프레임(12)에 재질을 상기한 예로 한정하는 것은 아니며, 제2리드프레임(12)의 재질은 전도성이 있는 모든 금속재질로 형성될 수 있다.The second lead frame 12 includes a second base part 12a and a second housing part 12b. Here, the second lead frame 12 is formed of a metal material including at least one of copper, aluminum, zinc, and nickel having high thermal conductivity. However, in the present invention, the material of the second lead frame 12 is not limited to the above example, and the material of the second lead frame 12 may be formed of all conductive metal materials.
상기 제2베이스부(12a)는 판형상으로 형성된다. 여기서, 제2베이스부(12a)의 형상은 도면에 도시된 형상에 한정되지 않고, 다양하게 변형될 수 있음은 물론이다. The second base portion 12a is formed in a plate shape. Here, the shape of the second base portion 12a is not limited to the shape shown in the drawings, and of course, may be variously modified.
이러한 제2베이스부(12a)는 제1베이스부(11a)와 이격되어 제1베이스부(11a)와 다른 전기경로를 형성하게 되는데, 제2베이스부(12a)는 제1베이스부(11a)에 안착된 발광 다이오드 칩(1a)과 와이어본딩되어 전기적인 경로를 제공하며, 이와 동시에 발광 다이오드 칩(1a)에서 발생하는 열을 방열하게 된다.The second base portion 12a is spaced apart from the first base portion 11a to form an electric path different from the first base portion 11a. The second base portion 12a is formed by the first base portion 11a. The wire bond with the light emitting diode chip (1a) mounted on the to provide an electrical path, and at the same time to dissipate heat generated from the light emitting diode chip (1a).
상기 제2하우징부(12b)는 일측부에 홈이 형성됨으로써, 홈이 형성되는 부근의 양측단에 다리부가 구성되는 형상으로 이루어진다. 이 경우, 제2하우징부(12b)는 일측단이 제2베이스부(12a)의 일측단과 연결된 상태로 절곡되어 제2베이스부(12a)의 일면에 적층된다. 이러한 제2하우징부(12b)는 제2베이스부(12a)에서 적층됨으로써, 발광 다이오드 칩(1a)이 실장되는 공간을 감싸는 형태로 배치된다. 따라서, 제2하우징부(12b)는 발광 다이오드 칩(1a)에서 발생하는 측면의 광을 반사시켜 반사효율을 향상시킴과 동시에, 제2베이스부(12a)에서 발생하는 열을 방열하게 된다.The second housing part 12b has a shape in which leg portions are formed at both side ends in the vicinity of the groove where the groove is formed at one side thereof. In this case, the second housing part 12b is bent in a state in which one end thereof is connected to one end of the second base part 12a and stacked on one surface of the second base part 12a. The second housing part 12b is stacked in the second base part 12a and is disposed in a form to surround a space in which the light emitting diode chip 1a is mounted. Therefore, the second housing part 12b reflects light from the side surface generated from the light emitting diode chip 1a to improve reflection efficiency and dissipate heat generated from the second base part 12a.
상기 절연부재부(20)는 제1베이스부(11a)와 제2베이스부(12a)가 이격된 상태에서 제1베이스부(11a)와 제2베이스부(12a)를 몰딩하여 제1리드프레임(11)과 제2리드프레임(12)을 일체형으로 결합시키게 된다. 이러한 절연부재부(20)는 제1하우징부(11b)와 제2하우징부(12b)의 외측에도 형성되어 제1리드프레임(11)과 제2리드프레임(12)간의 결합력을 향상시킬 수 있다. 이 경우, 절연부재부(20)는 종래 하우징 패키지와는 달리 발광 다이오드 칩(1a)에서 발생하는 광을 반시키는 역할을 하지 않고, 제1리드프레임(11)과 제2리드프레임(12)을 결합시키는 역할만을 수행하게 된다. 이러한 절연부재부(20)의 재질은 LCP, PCT, PA와 같은 열가소성 수지와, 실리콘과 에폭시와 같은 열경화성 수지로 이루어질 수 있다. 또한, 절연부재부(20)의 몰딩 방법은 제1리드프레임(11)과 제2리드프레임(12)을 인서트 사출하여 형성하는 것, 글래스 프릿(Glass frit)과 같은 절연체를 인서트(insert) 몰딩 방식으로 코팅하는 것 또는, 상기한 절연부재의 재질을 디스펜싱하여 형성하는 것으로 이루어질 수 있다.The insulating member 20 may be formed by molding the first base part 11a and the second base part 12a in a state where the first base part 11a and the second base part 12a are spaced apart from each other. The 11 and the second lead frame 12 are integrally coupled. The insulating member 20 may be formed outside the first housing part 11b and the second housing part 12b to improve the coupling force between the first lead frame 11 and the second lead frame 12. . In this case, unlike the conventional housing package, the insulating member 20 does not play a role of reflecting light generated from the light emitting diode chip 1a, and replaces the first lead frame 11 and the second lead frame 12 with each other. Only the role of combining. The insulating member 20 may be made of a thermoplastic resin such as LCP, PCT, or PA, and a thermosetting resin such as silicon and epoxy. In addition, the molding method of the insulating member portion 20 is formed by insert injection molding the first lead frame 11 and the second lead frame 12, insert molding an insulator such as glass frit Coating in a manner or by dispensing the material of the insulating member.
한편, 제1리드프레임(11)은 제1베이스부(11a)와 제1하우징부(11b)를 관통하는 제1관통홀(11c)이 더 형성될 수 있으며, 제2리드프레임(12)은 제2베이스부(12a)와 제2하우징부(12b)를 관통하는 제2관통홀(12c)이 더 형성될 수 있다. 이 경우, 제1관통홀(11c)과 제2관통홀(12c)에는 절연부재부(20)가 충진된다. 따라서, 절연부재부(20)는 제1리드프레임(11)과 제2리드프레임(12)을 관통한 상태로 제1리드프레임(11)과 제2리드프레임(12)과 결합되므로, 제1하우징부(11b)와 제2하우징부(12b)가 과열된 상태에서도 절연부재부(20)가 제1리드프레임(11)과 제2리드프레임(12)에서 박리되는 것을 방지하게 된다.Meanwhile, the first lead frame 11 may further include a first through hole 11c penetrating through the first base part 11a and the first housing part 11b, and the second lead frame 12 may be formed. A second through hole 12c penetrating through the second base portion 12a and the second housing portion 12b may be further formed. In this case, the insulating member portion 20 is filled in the first through hole 11c and the second through hole 12c. Therefore, since the insulating member 20 is coupled to the first lead frame 11 and the second lead frame 12 while penetrating the first lead frame 11 and the second lead frame 12, the first lead frame 11 and the second lead frame 12 are coupled to each other. Even when the housing part 11b and the second housing part 12b are overheated, the insulating member part 20 is prevented from being peeled off from the first lead frame 11 and the second lead frame 12.
상기한 바와 같은 본 발명의 일 실시예에 따른 발광 다이오드 패키지는 제1베이스부(11a)에 제1하우징부(11b)가 적층되고 제2베이스부(12a)에 제2하우징부(12b)가 적층된다. 따라서, 발광 다이오드 칩(1a)에 가장 가깝게 배열되는 모든 구성은 열전도성이 있는 것으로 배치되어 열을 방출시키는 면적으로 최대화시키게 되므로, 종래 발광 다이오드보다 방열성능을 대폭으로 향상시킬 수 있다. 이로 인해, 본 발명의 일 실시예에 따른 발광 다이오드 패키지는 방열성능이 극대화되어 발광 다이오드 칩(1a)의 열화등을 방지하여 발광 다이오드의 수명을 연장시키게 된다.In the LED package according to the embodiment of the present invention as described above, the first housing portion 11b is stacked on the first base portion 11a, and the second housing portion 12b is disposed on the second base portion 12a. Are stacked. Therefore, since all the components arranged closest to the light emitting diode chip 1a are arranged to be thermally conductive and maximize the area for releasing heat, the heat dissipation performance can be significantly improved compared to the conventional light emitting diodes. Therefore, the light emitting diode package according to the embodiment of the present invention maximizes the heat dissipation performance, thereby preventing deterioration of the light emitting diode chip 1a, thereby extending the life of the light emitting diode.
이러한 본 발명의 일 실시예에 따른 발광 다이오드 패키지와 종래의 발광 다이오드와 비교하여 설명하면, 종래 발광 다이오드는 발광 다이오드 칩(1a)이 안착되는 부분만을 금속으로 형성하고, 발광 다이오드 칩(1a)의 측면부근에는 플라스틱 재질의 사출성형물을 배치하게 되므로, 본 발명의 일 실시예에 따른 발광 다이오드 패키지보다 방열효율이 저조할 수밖에 없다.When compared with the light emitting diode package and the conventional light emitting diode according to an embodiment of the present invention, the conventional light emitting diode is formed of only the metal on which the light emitting diode chip (1a) is seated, the light emitting diode chip (1a) Since the injection molding material of the plastic material is disposed near the side surface, the heat dissipation efficiency is inevitably lower than that of the LED package according to the embodiment of the present invention.
한편, 본 발명의 일 실시예에 따른 발광 다이오드 패키지는 도금층(30)을 더 포함할 수 있다.On the other hand, the LED package according to an embodiment of the present invention may further include a plating layer (30).
상기 도금층(30)은 제1리드프레임(11)의 표면과 제2리드프레임(12)의 표면에 도금되어 형성된다. 이 경우, 도금층(30)은 알루미늄, 금 또는 은 가운데 적어도 어느 하나를 포함하여 형성될 수 있다. 이로 인해, 제1리드프레임(11)과 제2리드프레임(12)의 표면은 도금층(30)에 의해 반사면을 형성하게 된다. 따라서, 발광 다이오드 칩(1a)에서 발생되는 광은 도금층(30)의 반사면에 의해 반사되어 반사율을 향상시킬 수 있으며, 특히, 도금층(30)은 제1리드프레임(11)과 제2리드프레임(12)의 금속 표면에 형성되므로, 발광 다이오드에서 발생하는 열에 의해서도 변형이나 열화되지 않게 된다. 종래 발광 다이오드의 경우에는 플라스틱 하우징에 반사면이 형성되므로, 발광 다이오드 칩(1a)에서 발생되는 열에 의해 반사면이 쉽게 열화된다.The plating layer 30 is formed by plating the surface of the first lead frame 11 and the surface of the second lead frame 12. In this case, the plating layer 30 may be formed including at least one of aluminum, gold or silver. Therefore, the surfaces of the first lead frame 11 and the second lead frame 12 form a reflective surface by the plating layer 30. Therefore, the light generated from the light emitting diode chip 1a may be reflected by the reflecting surface of the plating layer 30 to improve the reflectance. In particular, the plating layer 30 may include the first lead frame 11 and the second lead frame. Since it is formed on the metal surface of (12), it does not deform or deteriorate even by the heat which generate | occur | produces in a light emitting diode. In the conventional light emitting diode, since the reflective surface is formed in the plastic housing, the reflective surface is easily degraded by the heat generated from the light emitting diode chip 1a.
이 경우, 제1하우징부(11b)의 일측단과 제2하우징부(12b)의 일측단은 경사면으로 이루어진 리플렉터면(31)을 형성하게 된다. 여기서, 리플렉터면(31)은 프레스를 이용한 압착 가공이나 절삭공구를 이용한 절삭 가공으로 형성될 수 있다. 이러한 리플렉터면(31)은 플라스틱이 아닌 금속층이 경사진 형태로 형성되므로, 변형 및 열화되지 않고도 발광 다이오드 칩(1a)에서 발생되는 광을 반사시켜 광의 방출효율을 증대시키는 역할을 하게 한다.In this case, one side end of the first housing part 11b and one side end of the second housing part 12b form a reflector surface 31 formed of an inclined surface. Here, the reflector surface 31 may be formed by pressing using a press or cutting using a cutting tool. Since the reflector surface 31 is formed of an inclined metal layer rather than plastic, the reflector surface 31 reflects the light generated from the light emitting diode chip 1a without deformation and deterioration, thereby increasing the light emission efficiency.
이하에서는 본 발명의 일 실시예에 따른 발광 다이오드 패키지의 제조 방법에 대해 설명하기로 한다.Hereinafter, a method of manufacturing a light emitting diode package according to an embodiment of the present invention will be described.
도 7은 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법의 순서도이다.7 is a flowchart illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.
도 7을 더 참조하면, 본 발명의 일 실시예에 따른 발광 다이오드 패키지는 금속판재가공단계(S10), 리드프레임절곡단계(S20) 및, 리드프레임몰딩단계(S30)를 포함한다.Referring to FIG. 7, the LED package according to an embodiment of the present invention includes a metal plate processing step S10, a lead frame bending step S20, and a lead frame molding step S30.
상기 금속판재가공단계(S10)는 도 6에 도시된 바와 같이, 금속판재(1b)를 스트립하여 일측에 제1리드프레임(11)을 형성하고 타측에 제1리드프레임(11)과 이격되는 제2리드프레임(12)을 형성하는 단계이다. 이 경우, 금속판재(1b)는 복수 개의 제1리드프레임(11)과 제2리드프레임(12)을 형성할 수 있으며, 제1리드프레임(11)과 제2리드프레임(12)을 스트립하는 경우에 제1리드프레임(11)과 제2리드프레임(12)이 금속판재(1b)에서 완전히 떨어지지 않고 일부분을 지지하는 형태로 스트립될 수 있다. 이 경우, 스트립방법은 프레스 금형을 이용하여 스템핑하는 판금가공이나 절삭 가공으로 이루어질 수 있다.As shown in FIG. 6, the metal plate processing step S10 is performed by stripping the metal plate 1b to form a first lead frame 11 on one side and a second spaced apart from the first lead frame 11 on the other side. In this step, the lead frame 12 is formed. In this case, the metal plate 1b may form a plurality of first lead frames 11 and second lead frames 12, and strip the first lead frames 11 and the second lead frames 12. In this case, the first lead frame 11 and the second lead frame 12 may be stripped in such a manner as to support a part without completely falling off the metal plate 1b. In this case, the strip method may be made of sheet metal processing or cutting by stamping using a press die.
상기 리드프레임절곡단계(S20)는 도 5에 도시된 바와 같이, 제1리드프레임(11)의 측단을 절곡하여 하부에 제1베이스부(11a)를 형성하고 제1베이스부(11a)의 상부에 제1하우징부(11b)를 적층하며, 제2리드프레임(12)의 측단을 절곡하여 하부에 제2베이스부(12a)를 형성하고 제2베이스부(12a)의 상부에 제2하우징부(12b)를 적층하는 단계이다. 상기 리드프레임절곡단계(S20)는 전술한 바와 같이, 스템핑공정과 밴딩공정에 의해 이루어질 수 있다.In the lead frame bending step S20, as shown in FIG. 5, the side end of the first lead frame 11 is bent to form a first base part 11a at a lower part and an upper part of the first base part 11a. The first housing part 11b is stacked on the substrate, and the second end part 12a is formed at the lower part by bending the side end of the second lead frame 12, and the second housing part is formed on the upper part of the second base part 12a. This is a step of stacking 12b. As described above, the lead frame bending step S20 may be performed by a stamping process and a bending process.
상기 리드프레임몰딩단계(S30)는 도 1에 도시된 바와 같이 제1리드프레임(11)과 제2리드프레임(12)들을 몰딩하여 제1리드프레임(11)과 제2리드프레임(12)들을 일체형으로 형성하는 단계이다. 여기서, 몰딩방법은 전술하였으므로, 중복해서 설명하지 않기로 한다.In the lead frame molding step S30, the first lead frame 11 and the second lead frame 12 are molded by molding the first lead frame 11 and the second lead frame 12, as shown in FIG. 1. It is a step of forming integrally. Here, since the molding method has been described above, it will not be repeated.
상기한 바와 같은 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법은 제1하우징부(11b)와 제2하우징부(12b)를 금속으로 형성하여 열의 방열성능을 극대화시키게 된다.In the method of manufacturing a light emitting diode package according to an embodiment of the present invention as described above, the first housing part 11b and the second housing part 12b are made of metal to maximize heat dissipation performance.
이 경우, 종래의 경우에는 방열 성능을 극대화시키기 위하여 별도의 금속을 적층하거나 세라믹 하우징을 형성하였으나, 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법은 종래와 같은 방법을 취하지 않고 고순도의 금속을 절곡하는 형태로 형성하므로, 고방열을 요구하는 발광 다이오드의 제조시 제조비용을 획기적으로 절감시키게 된다.In this case, in the conventional case, in order to maximize heat dissipation performance, a separate metal is laminated or a ceramic housing is formed. However, the method of manufacturing a light emitting diode package according to an embodiment of the present invention does not take a method as in the prior art and uses a high purity metal. Since it is formed in a bent form, the manufacturing cost can be drastically reduced when manufacturing a light emitting diode requiring high heat dissipation.
나아가, 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법은 하우징부를 절곡하여 베이스부에 적층하는 형태로 구현되므로, 종래의 경우보다 프레스 공정을 줄어들게 하여 제조비용을 절감시킬 수 있으며, 종래의 경우와 같이 리드프레임(10)과 하우징을 결합시키는 별도의 공정이 필요치 않아 제조비용을 절감시킬 수 있다.Furthermore, since the LED package manufacturing method according to an embodiment of the present invention is implemented in a form in which the housing part is bent and laminated on the base part, the manufacturing process can be reduced by reducing the press process than in the conventional case, and in the conventional case As such, there is no need for a separate process of coupling the lead frame 10 and the housing, thereby reducing manufacturing costs.
한편, 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법은 금속판재가공단계(S10)를 진행하는 경우 리플렉터면가공단계(S40)를 더 진행할 수 있다. 여기서, 리플렉터면가공단계(S40)는 선택적으로 구성될 수 있다.On the other hand, the LED package manufacturing method according to an embodiment of the present invention may further proceed to the reflector surface processing step (S40) when the metal plate processing step (S10). Here, the reflector surface processing step (S40) may be selectively configured.
상기 리플렉터면가공단계(S40)는 도 3에 도시된 바와 같이, 제1하우징부(11b)의 측단과 제2하우징부(12b)의 측단을 가공하여 경사면을 형성하는 단계이다. 이 경우, 리플렉터면가공단계(S40)는 금속판재가공단계(S10)에서 스트립을 진행하는 공정과 동시에 진행하거나, 금속판재의 스트립이후에 절삭가공에 의해 이루어질 수 있다. 이러한 리플렉터면가공단계(S40)에 의해 제1하우징부(11b)와 제2하우징부(12b)에는 경사면을 형성하여 발광 다이오드 칩(1a)에서 발생되는 광을 반사시켜 광의 방출성능을 향상시킬 수 있다.As shown in FIG. 3, the reflector surface processing step S40 is a step of forming an inclined surface by processing side ends of the first housing part 11b and side ends of the second housing part 12b. In this case, the reflector surface processing step (S40) may be performed at the same time as the process of proceeding the strip in the metal plate processing step (S10), or by a cutting process after the strip of the metal plate. Through the reflector surface processing step S40, an inclined surface is formed on the first housing part 11b and the second housing part 12b to reflect light generated from the light emitting diode chip 1a, thereby improving light emission performance. have.
또한, 본 발명의 일 실시예에 따른 발광 다이오드 패키지 제조 방법은 리드프레임절곡단계(S20) 이후에 도금단계(S50)를 더 진행할 수 있다. 여기서, 도금단계(S50)는 선택적으로 구성될 수 있다.In addition, the LED package manufacturing method according to an embodiment of the present invention may further proceed with the plating step (S50) after the lead frame bending step (S20). Here, the plating step (S50) may be selectively configured.
상기 도금단계(S50)는 도 3에 도시된 바와 같이, 제1리드프레임(11)과 제2리드프레임(12)에 도금층(30)을 형성하는 단계이다. 이 경우, 도금층(30)은 전술한 바와 같이, 알루미늄, 금 또는 은 가운데 적어도 어느 하나를 포함하여 형성될 수 있으며, 도금층(30)은 전해도금, 스퍼터링 증착, 진공증착 및, 스프레이증착 가운데 적어도 어느 하나의 방법으로 이루어질 수 있다. 이러한 도금단계(S50)는 제1리드프레임(11)의 표면과 제2리드프레임(12)의 표면에 광의 반사율이 좋은 도금층(30)을 형성함으로써, 광의 방출성능을 극대화시킬 수 있게 된다. 종래의 경우에는 플라스틱 하우징을 사용하므로, 본 발명과 같이 반사율이 좋은 금속면을 형성할 수 없다.In the plating step S50, as shown in FIG. 3, the plating layer 30 is formed on the first lead frame 11 and the second lead frame 12. In this case, as described above, the plating layer 30 may include at least one of aluminum, gold, or silver, and the plating layer 30 may include at least any one of electroplating, sputtering deposition, vacuum deposition, and spray deposition. It can be done in one way. In the plating step S50, the plating layer 30 having good reflectance of light is formed on the surface of the first lead frame 11 and the surface of the second lead frame 12, thereby maximizing light emission performance. In the conventional case, since a plastic housing is used, a metal surface with good reflectance cannot be formed as in the present invention.
도 8은 본 발명의 다른 실시예에 따른 발광 다이오드 패키지의 사시도이다.8 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 8에 도시된 발광 다이오드 패키지는 전술한 실시예의 발광 다이오드 패키지와 동일한 구성으로 형성되며, 차이점은 제1하우징부(11b)와 제2하우징부(12b)가 각각의 제1베이스부(11a)와 제2베이스부(12a)에 적층되는 경우, 제1하우징부(11b)와 제2하우징부(12b)가 대향하게 마주보는 영역이 원형으로 형성되는 것이 차이점이다. The light emitting diode package shown in FIG. 8 is formed in the same configuration as the light emitting diode package of the above-described embodiment, and the difference is that the first housing part 11b and the second housing part 12b are each of the first base part 11a. In the case where the first and second housing parts 11b and 12b are stacked on the second base part 12a, the areas facing each other are formed in a circular shape.
전술한 실시예의 발광 다이오드 패키지의 경우에는 제1하우징부(11b)와 제2하우징부(12b)가 대향하게 마주보는 영역이 사각형상으로 이루어진 것을 도시하였다. 본 실시예에서 예시하는 바와 같이, 본 발명의 다른 실시예에 따른 발광 다이오드 패키지는 제1하우징부(11b)와 제2하우징부(12b)가 대향하게 마주보는 영역이 각형이나 원형에 한정되지 않고, 다양하게 변형될 수 있음을 당업자라면 잘 알 수 있을 것이다.In the case of the LED package according to the above-described embodiment, the first housing part 11b and the second housing part 12b face each other in a rectangular shape. As exemplified in this embodiment, the LED package according to another embodiment of the present invention is not limited to the rectangular or circular area where the first housing portion 11b and the second housing portion 12b face each other. It will be apparent to those skilled in the art that various modifications may be made.
도 9는 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시도이다.9 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 9에 도시된 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 도 1에 도시된 발광 다이오드 패키지에 대한 실시예에서 단자부(50)가 더 부가된 상태의 사시도이다.A light emitting diode package according to another embodiment of the present invention shown in FIG. 9 is a perspective view of a state in which the terminal unit 50 is further added in the embodiment of the light emitting diode package shown in FIG. 1.
상기 단자부(50)는 제1베이스부 및 제2베이스부의 외측으로 연장된다. 이러한 단자부(50)는 발광 다이오드 패키지를 PCB기판에 실장하는 경우에 솔더링 되는 공간을 제공하는 역할을 한다. 이러한 단자부(50)의 형상은 각형, 원형 또는, 각각의 형상들에 홈이나 홀이 형성되는 형상으로 이루어질 수 있으며, 본 발명에서 단자부(50)의 형상을 한정하는 것은 아니다.The terminal portion 50 extends outside the first base portion and the second base portion. The terminal unit 50 serves to provide a soldered space when the LED package is mounted on the PCB. The shape of the terminal portion 50 may be formed in a square, a circular shape, or a shape in which grooves or holes are formed in the respective shapes, but the shape of the terminal portion 50 is not limited in the present invention.
도 10은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시도이다.10 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 10에 도시된 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 도 1에 도시된 발광 다이오드 패키지에 대한 실시예에서 제3리드프레임(60)이 더 부가된 상태의 사시도이다.A light emitting diode package according to another embodiment of the present invention shown in FIG. 10 is a perspective view of a state in which a third lead frame 60 is further added in the embodiment of the light emitting diode package shown in FIG. 1.
상기 제3리드프레임(60)은 제1리드프레임(11)과 제2리드프레임(12) 사이에 배치되며, 제1리드프레임(11)과 제2리드프레임(12)과 이격되고, 이 경우, 절연부재부(20)는 제3리드프레임(60)과 제1리드프레임(11) 및 제2리드프레임(12)의 간극을 채우게 된다. 이러한 제3리드프레임(60)은 제1리드프레임(11)과 제2리드프레임(12)들과 이격되어 제3의 분극을 형성하는 것이다. 즉, 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 전술한 실시예와 같이 2극의 발광 다이오드에서 변형되어 3극의 발광 다이오드에도 적용될 수 있음을 알 수 있다.The third lead frame 60 is disposed between the first lead frame 11 and the second lead frame 12, spaced apart from the first lead frame 11 and the second lead frame 12, in this case The insulating member 20 fills the gap between the third lead frame 60, the first lead frame 11, and the second lead frame 12. The third lead frame 60 is spaced apart from the first lead frame 11 and the second lead frame 12 to form a third polarization. That is, it can be seen that the light emitting diode package according to another embodiment of the present invention can be applied to a light emitting diode of three poles by changing from a light emitting diode of two poles as in the above-described embodiment.
도 11은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시도이다.11 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 11에 도시된 바와 같이, 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 도 1에 도시된 실시예에서 제2리플렉터면(31b)을 형성한 것이다.As shown in FIG. 11, the LED package according to another embodiment of the present invention forms the second reflector surface 31b in the embodiment shown in FIG. 1.
본 실시예의 경우, 제2리플렉터면(31b)은 제1하우징부(11b)와 제2하우징부(12b)의 외곽부에서 상방으로 돌출되는 형상으로 이루어지며, 이 경우, 제2리플렉터면(31b)은 경사지도록 형성되고, 전술한 도금층이 더 형성될 수 있다.In the present embodiment, the second reflector surface 31b is formed to protrude upward from the outer portions of the first housing portion 11b and the second housing portion 12b, in which case the second reflector surface 31b. ) Is formed to be inclined, and the above-described plating layer may be further formed.
이와 같이, 본 발명은 하우징부가 금속재질로 형성되므로, 종래에 없던 제2리플렉터면(31b)의 구성을 더 형성할 수 있어 발광다이오드칩(1a)에서 발생하는 광의 방출성능을 극대화시킬 수 있다.As described above, since the housing part is formed of a metal material, the second reflector surface 31b may be further formed, thereby maximizing the emission performance of light generated from the light emitting diode chip 1a.
도 12는 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지의 사시오도이다. 12 is a perspective view of a light emitting diode package according to another embodiment of the present invention.
도 11에 도시된 바와 같이, 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 도 1에 도시된 실시예에서 제1리플렉터면의 상부에 2단 리플렉터면(31c)을 형성한 것이다. 이 경우, 2단 리플렉터면(31c)에는 전술한 도금층이 더 형성될 수 있다.As shown in FIG. 11, in the LED package according to another embodiment of the present invention, the two-stage reflector surface 31c is formed on the first reflector surface in the embodiment shown in FIG. 1. In this case, the above-described plating layer may be further formed on the two-stage reflector surface 31c.
이러한 2단 리플렉터면(31c)은 리플렉터(31)면의 상부에 형성됨으로써, 발광다이오드칩(1a)에서 발생하는 광의 방출성능을 극대화시킬 수 있다.Since the two-stage reflector surface 31c is formed on the reflector 31, the light emission performance of the light emitted from the light emitting diode chip 1a can be maximized.
이와 같이 설명된 본 발명은 예시적인 것에 불과하다. 그러므로, 본 발명은 상기의 상세한 설명에서 언급되는 형태로만 한정되는 것은 아님을 잘 이해할 수 있을 것이다. 따라서, 본 발명의 기술적 보호 범위는 첨부된 청구범위의 기술적 사상에 의해 정해져야 할 것이다. 즉, 본 발명의 기술적 보호 범위는 상기한 실시예에 기술된 구성요소들의 변형물과 균등물 및 대체물을 포함하는 것으로 해석되어야 한다.The invention thus described is merely illustrative. Therefore, it will be understood that the present invention is not limited to the forms mentioned in the above detailed description. Therefore, the technical protection scope of the present invention will be defined by the technical spirit of the appended claims. That is, the technical protection scope of the present invention should be construed to include modifications, equivalents, and substitutes for the components described in the above embodiments.
Claims (13)
- 발광 다이오드 칩을 실장시키는 발광 다이오드 패키지에 있어서,A light emitting diode package mounting a light emitting diode chip,발광 다이오드 칩이 실장되는 안착공간을 제공하는 베이스부 및, 일측단이 상기 베이스부의 일측단과 연결된 상태로 절곡되어 상기 베이스부의 일면에 적층되는 하우징부를 포함하는 리드프레임; 를 포함하는 발광 다이오드 패키지.A lead frame including a base part providing a seating space in which a light emitting diode chip is mounted, and a housing part of which one end is bent while being connected to one end of the base part and stacked on one surface of the base part; Light emitting diode package comprising a.
- 제1항에 있어서,The method of claim 1,상기 베이스부와 상기 하우징부는 전도성 금속재질로 이루어지는 것을 특징으로 하는 발광 다이오드 패키지.The base portion and the housing portion light emitting diode package, characterized in that made of a conductive metal material.
- 제1항에 있어서,The method of claim 1,상기 베이스부의 표면과 상기 하우징부의 표면에 도금되어 반사면을 형성하는 도금층; 을 더 포함하는 발광 다이오드 패키지.A plating layer formed on the surface of the base part and the surface of the housing part to form a reflective surface; Light emitting diode package further comprising.
- 제3항에 있어서,The method of claim 3,상기 도금층은 알루미늄, 금 또는 은 가운데 적어도 어느 하나를 포함하여 형성되는 것을 특징으로 하는 발광 다이오드 패키지.The plating layer is a light emitting diode package comprising at least one of aluminum, gold or silver.
- 제1항에 있어서,The method of claim 1,상기 하우징부의 일측단에 경사면으로 이루어진 리플렉터면을 형성하는 것 또는, 상기 하우징부의 일측단에 2단 리플렉터면을 형성하는 것을 특징으로 하는 발광 다이오드 패키지.Forming a reflector surface consisting of an inclined surface on one side end of the housing portion, or a two-stage reflector surface formed on one side end of the housing portion.
- 제1항에 있어서,The method of claim 1,상기 리드프레임은The lead frame상기 베이스부의 외측으로 연장되는 단자부; 를 더 포함하는 발광 다이오드 패키지.A terminal portion extending outwardly of the base portion; A light emitting diode package further comprising.
- 제1항에 있어서,The method of claim 1,상기 리드프레임은 제1리드프레임과 제2리드프레임을 포함하고,The lead frame includes a first lead frame and a second lead frame,상기 제1리드프레임은 상기 발광 다이오드 칩이 실장되는 안착공간을 제공하는 제1베이스부 및, 일측단이 상기 제1베이스부의 일측단과 연결된 상태로 절곡되어 상기 제1베이스부의 일면에 적층되는 제2하우징부를 포함하고,The first lead frame may include a first base part providing a seating space in which the LED chip is mounted, and a second end of the first lead frame bent to be connected to one end of the first base part and stacked on one surface of the first base part. Including a housing part,상기 제1리드프레임은 상기 제1베이스부와 이격되어 상기 제1베이스부와 다른 전기경로를 형성하는 제2베이스부 및, 일측단이 상기 제2베이스부의 일측단과 연결된 상태로 절곡되어 상기 제2베이스부의 일면에 적층되는 제2하우징부를 포함하고,The first lead frame may be spaced apart from the first base part to form a second electric path different from the first base part, and one end of the second base part may be bent in a state connected to the one end of the second base part. A second housing part laminated on one surface of the base part,상기 제1베이스부와 상기 제2베이스부가 이격된 상태에서 상기 제1베이스부와 상기 제2베이스부를 몰딩하여 상기 제1리드프레임과 상기 제2리드프레임을 일체형으로 결합시키는 절연부재부; 를 포함하는 발광 다이오드 패키지.An insulating member part which integrally couples the first lead frame and the second lead frame by molding the first base part and the second base part in a state where the first base part and the second base part are separated from each other; Light emitting diode package comprising a.
- 제7항에 있어서,The method of claim 7, wherein상기 제1리드프레임은 상기 제1베이스부와 상기 제1하우징부를 관통하는 제1관통홀이 더 형성되고, The first lead frame further includes a first through hole penetrating the first base part and the first housing part.상기 제2리드프레임은 상기 제2베이스부와 상기 제2하우징부를 관통하는 제2관통홀이 더 형성되며,The second lead frame further includes a second through hole penetrating the second base part and the second housing part.상기 제1관통홀과 상기 제2관통홀에는 상기 절연부재부가 충진되는 것을 특징으로 하는 발광 다이오드 패키지.The first package hole and the second through hole LED package, characterized in that the insulating member is filled.
- 제7항에 있어서,The method of claim 7, wherein상기 제1리드프레임과 상기 제2리드프레임 사이에 배치되며, 상기 제1리드프레임과 상기 제2리드프레임과 이격되는 제3리드프레임을 더 포함하는 발광 다이오드 패키지.And a third lead frame disposed between the first lead frame and the second lead frame and spaced apart from the first lead frame and the second lead frame.
- 금속판재를 스트립하여 일측에 제1리드프레임을 형성하고 타측에 상기 제1리드프레임과 이격되는 제2리드프레임을 형성하는 금속판재가공단계;A metal plate processing step of forming a first lead frame on one side by stripping the metal plate and forming a second lead frame spaced apart from the first lead frame on the other side;상기 제1리드프레임의 측단을 절곡하여 하부에 제1베이스부를 형성하고 상기 제1베이스부의 상부에 제1하우징부를 적층하며, 상기 제2리드프레임의 측단을 절곡하여 하부에 제2베이스부를 형성하고 상기 제2베이스부의 상부에 제2하우징부를 적층하는 리드프레임절곡단계; 및,Bending the end of the first lead frame to form a first base part at the bottom, laminating a first housing part to the top of the first base part, and bending the side end of the second lead frame to form a second base part at the bottom; A lead frame bending step of stacking a second housing part on the second base part; And,상기 제1리드프레임과 상기 제2리드프레임들을 몰딩하여 상기 제1리드프레임과 상기 제2리드프레임들을 일체형으로 형성하는 리드프레임몰딩단계; 을 포함하는 발광 다이오드 패키지 제조 방법.A lead frame molding step of molding the first lead frame and the second lead frames to integrally form the first lead frame and the second lead frames; Light emitting diode package manufacturing method comprising a.
- 제10항에 있어서,The method of claim 10,상기 금속판재가공단계시에 진행되며,In the metal sheet processing step,상기 제1하우징부의 측단과 상기 제2하우징부의 측단을 가공하여 경사면을 형성하는 리플렉터면가공단계; 을 더 포함하는 발광 다이오드 패키지 제조 방법.A reflector surface processing step of forming a sloped surface by processing side ends of the first housing part and side ends of the second housing part; Method for manufacturing a light emitting diode package further comprising.
- 제10항에 있어서,The method of claim 10,상기 리드프레임절곡단계 이후에 진행되며,After the lead frame bending step,상기 제1리드프레임과 상기 제2리드프레임에 도금층을 형성하는 도금단계; 를 더 포함하는 발광 다이오드 패키지 제조 방법.A plating step of forming a plating layer on the first lead frame and the second lead frame; Method for manufacturing a light emitting diode package further comprising.
- 제12항에 있어서,The method of claim 12,상기 도금층은 전해도금, 스퍼터링 증착, 진공증착 및, 스프레이증착 가운데 적어도 어느 하나의 방법으로 이루어지는 것을 특징으로 하는 발광 다이오드 패키지 제조 방법.The plating layer is a method of manufacturing a light emitting diode package, characterized in that made of at least one method of electroplating, sputter deposition, vacuum deposition, and spray deposition.
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KR100985668B1 (en) * | 2008-06-20 | 2010-10-05 | 서울반도체 주식회사 | Light emitting device |
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