WO2013136436A1 - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
WO2013136436A1
WO2013136436A1 PCT/JP2012/056390 JP2012056390W WO2013136436A1 WO 2013136436 A1 WO2013136436 A1 WO 2013136436A1 JP 2012056390 W JP2012056390 W JP 2012056390W WO 2013136436 A1 WO2013136436 A1 WO 2013136436A1
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WO
WIPO (PCT)
Prior art keywords
finger
fingers
solar cell
finger portion
line width
Prior art date
Application number
PCT/JP2012/056390
Other languages
French (fr)
Japanese (ja)
Inventor
悟司 東方田
Original Assignee
三洋電機株式会社
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Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to PCT/JP2012/056390 priority Critical patent/WO2013136436A1/en
Publication of WO2013136436A1 publication Critical patent/WO2013136436A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell.
  • Patent Document 1 discloses a solar cell including a collector electrode composed of a bus bar and fingers provided on a substrate.
  • the finger has a first end and a second end.
  • the first end is a portion of the finger that is connected to the bus bar.
  • the second end is the part of the finger that is farthest from the bus bar.
  • the fingers are configured so that the width decreases monotonously from the first end toward the second end.
  • the current collected by the fingers increases as it approaches the bus bar.
  • the aforementioned fingers are not optimized to sufficiently reduce power loss due to current and finger resistance.
  • a solar cell according to the present invention includes a photoelectric conversion unit and a collector electrode provided on a main surface of the photoelectric conversion unit, and the collector electrode includes a bus bar and a finger that intersects with the bus bar.
  • the first finger portion extended so that the line width becomes narrower with increasing distance from the side, and the first finger portion continuously extending from the first finger portion while maintaining the line width at the boundary between the first finger portion and the first finger portion.
  • 2 finger parts, and the 2nd finger part is shorter than the length of the 1st finger part.
  • the output of the solar cell can be improved.
  • FIG. 3 is a cross-sectional view taken along line AA in FIGS. 1 and 2.
  • FIG. 3 is a sectional view taken along line BB in FIG.
  • it is an output characteristic figure when a horizontal axis is set to L1 / L and a vertical axis
  • shaft is made into the output (%) of a solar cell.
  • FIG. 1 is a plan view of the light-receiving surface side of the solar cell 1.
  • FIG. 2 is a plan view of the back surface side of the solar cell 1.
  • FIG. 3 is a cross-sectional view taken along line AA in FIGS.
  • the “light-receiving surface” means a main surface on the side on which sunlight is mainly incident.
  • the “back surface” means a main surface opposite to the light receiving surface.
  • the solar cell 1 includes a photoelectric conversion unit 2, a collector electrode 4 provided on the light receiving surface of the photoelectric conversion unit 2, and a collector electrode 6 provided on the back surface of the photoelectric conversion unit 2.
  • a part such as a layer, a film, or a region
  • another part includes not only a case where the part is directly stacked, but also a case where another part exists between them.
  • the photoelectric conversion unit 2 includes a transparent conductive film 11, a p-type amorphous silicon film 12, an i-type amorphous silicon film 13, an n-type single crystal silicon substrate 14, and an i-type amorphous material from the light receiving surface side.
  • the n-type single crystal silicon substrate 14 is a power generation layer that receives light and generates carriers.
  • the power generation layer is not limited to the n-type single crystal silicon substrate 14.
  • the power generation layer may be either n-type or p-type conductivity type.
  • the power generation layer may be any of a crystalline semiconductor substrate, a polycrystalline silicon substrate, a gallium arsenide (GaAs) substrate, and an indium phosphide (InP) substrate.
  • the i-type amorphous silicon film 13 is formed on the light-receiving surface of the n-type single crystal silicon substrate 14.
  • the i-type amorphous silicon film 13 is an intrinsic amorphous silicon film.
  • the p-type amorphous silicon film 12 is formed on the i-type amorphous silicon film 13.
  • the p-type amorphous silicon film 12 is an amorphous silicon film doped with p-type impurities.
  • the transparent conductive film 11 is formed on the p-type amorphous silicon film 12.
  • the transparent conductive film 11 includes at least one of metal oxides such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), and titanium oxide (TiO 2 ). .
  • the i-type amorphous silicon film 15 is formed on the back surface of the n-type single crystal silicon substrate 14.
  • the i-type amorphous silicon film 15 is an intrinsic amorphous silicon film.
  • the n-type amorphous silicon film 16 is formed on the i-type amorphous silicon film 15.
  • the n-type amorphous silicon film 16 is an amorphous silicon film doped with n-type impurities.
  • the transparent conductive film 17 is formed on the n-type amorphous silicon film 16.
  • the transparent conductive film 17 includes the same material as that of the transparent conductive film 11.
  • the collecting electrode 4 is formed on the transparent conductive film 11.
  • the collector electrode 4 is a conductive material, for example, a metal such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni) and chromium (Cr), or these metals. It can comprise with the alloy containing 1 or more types of these.
  • the collector electrode 4 includes bus bars 19a and 19b and fingers 20a to 20d.
  • the bus bars 19a and 19b are provided to take out the carriers generated in the photoelectric conversion unit 2.
  • the bus bars 19a and 19b are arranged in parallel with a predetermined interval so as to collect the current collected by the fingers 20a to 20d as evenly as possible.
  • the bus bar 19a is arranged at the center of the left half when the main surface of the photoelectric conversion unit 2 is divided into two, and the bus bar 19b is arranged at the center of the right half.
  • the width of the bus bars 19a and 19b is 1 mm.
  • the fingers 20a to 20d are provided to collect carriers generated in the photoelectric conversion unit 2.
  • the fingers 20a to 20d are arranged so as to cross the bus bars 19a and 19b and be electrically connected.
  • the fingers 20a to 20d are arranged in parallel at predetermined intervals so that current can be collected evenly from the surface of the photoelectric conversion unit 2.
  • the n sets of fingers 20a to 20d divide the area of the main surface of the photoelectric conversion unit 2 into (n + 1) equal parts. Placed in.
  • the plurality of fingers 20a are arranged in parallel with each other at an interval of 2 mm, for example.
  • the collector electrode 6 may have the same configuration as that of the collector electrode 4, or may include a configuration that is partially different in terms of width, material, or shape.
  • the finger 20 a has a line width that changes along its extending direction, and includes a first finger portion 203 and a second finger portion 204.
  • the line width here means the length in the short direction of the fingers 20a to 20d when the fingers 20a to 20d are viewed from above.
  • the first finger portion 203 is divided into multiple stages so that the change rate of the line width changes, and is extended so that the line width gradually decreases as the distance from the bus bar 19a side increases.
  • the first finger 203 is connected to the bus bar 19a at the end 201.
  • the end part 201 is the widest part in the first finger part 203.
  • the boundary portion 202 is a portion having the narrowest width in the first finger portion 203.
  • the first finger portion 203 has a first region 203a in which the line width Y is reduced at a multi-stage change rate and the line width Y is reduced at a change rate of ⁇ Y 1 / ⁇ X 1, and a change rate of ⁇ Y 2 / ⁇ X 2.
  • the first finger portion 203 has a line width that becomes narrower from the end 201 at a change rate ⁇ Y 1 / ⁇ X 1, and a change rate ⁇ Y 2 / ⁇ X 2 that is a change rate different from the change rate ⁇ Y 1 / ⁇ X 1 on the way.
  • the line width becomes narrower.
  • the change rate ⁇ Y 2 / ⁇ X 2 is smaller than the change rate ⁇ Y 1 / ⁇ X 1 .
  • the rate of change in line width of the first finger portion 203 increases as it approaches the bus bar 19a side.
  • the second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the line width at the line width of the boundary portion 202 of the first finger portion 203. Is done. That is, the distance X 3 from the end portion 201, a distance when the X 3 is a line width Y 3 of the second finger portions 204, per unit change amount of the distance X 3 along the extending direction of the second finger portion 204 the rate of change [Delta] Y 3 / [Delta] X 3 showing the rate of change [Delta] Y 3 line width is zero.
  • the line widths of the boundary part 202 and the second finger part 204 of the first finger part 203 are not less than a rubbing prevention line width that does not cause printing rubbing when screen printing is performed.
  • the printing rubbing referred to here is a printing defect such as a part missing when the finger 20a is formed.
  • the length of the second finger portion 204 of the finger 20a is shorter than the length of the first finger portion 203 of the finger 20a.
  • the fingers 20b, 20c, and 20d also include a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204.
  • the fingers 20b and 20c include a connecting portion 205 to which the second finger portion 204 of the finger 20b and the second finger portion 204 of the finger 20c are connected.
  • the length of the finger 20b extending from the connecting portion 205 toward the bus bar 19a is the same as the length of the finger 20c extending from the connecting portion 205 toward the bus bar 19b.
  • the finger 20d includes a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204, and extends in a direction opposite to the finger 20a.
  • FIG. 4 is a cross-sectional view taken along the line BB of FIG. 1 and shows a cross-sectional view of the finger 20a.
  • the thickness of the first finger portion 203 is thickest at the end portion 201 having a large line width, continuously thins toward the boundary portion 202, and thinnest at the boundary portion 202.
  • the change ⁇ Z of the thickness Z per unit change amount of the distance X along the extending direction of the first finger portion 203 using the distance X from the end portion 201 and the thickness Z of the first finger portion 203 at the distance X. Can be expressed as a change rate ⁇ Z / ⁇ X.
  • the first finger portion 203 has a first region 203a in which the thickness Z is reduced at a multistage change rate, and the thickness Z is reduced at a change rate of ⁇ Z 1 / ⁇ X 1 , and a thickness Z at a change rate of ⁇ Z 2 / ⁇ X 2. And a second region 203b that becomes smaller. That is, the first finger 203, thickness becomes thin in the rate of change [Delta] Z 1 / [Delta] X 1 from the end portion 201, on the way for a change rate [Delta] Z 1 / [Delta] X 1 is different from the rate of change and the rate of change [Delta] Z 2 / [Delta] X 2 The thickness is reduced.
  • the rate of change Z 2 / ⁇ X 2 is smaller than the rate of change ⁇ Z 1 / ⁇ X 1 .
  • the rate of change in thickness of the first finger portion 203 increases as it approaches the bus bar 19a side.
  • the second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the thickness of the boundary portion 202 of the first finger portion 203. Is done.
  • the thickness of the 2nd finger part 204 shall be more than predetermined minimum thickness.
  • the intervals between the plurality of fingers 22a to 22d are set narrower than the plurality of fingers 20a to 20d.
  • the plurality of fingers 22a to 22d are arranged in parallel with each other at an interval of 1 mm.
  • the fingers 22a to 22d change in line width along the extending direction, and include a first finger portion 223 and a second finger portion 224.
  • the intervals between the fingers 22a to 22d are set narrower than the plurality of fingers 20a to 20d, the number of carriers collected per one finger 22a to 22d is reduced.
  • the length of the fingers 22a to 22d of the second finger portion 224 having the narrowest line width is set to be long. ing. That is, as can be seen from FIGS. 1 and 2, when the lengths of the second finger portions 204 of the fingers 20a to 20d are compared with the lengths of the second finger portions 224 of the fingers 22a to 22d, the second fingers of the fingers 20a to 20d are compared. The length of the portion 204 is shorter than the length of the second finger portion 224 of the fingers 22a to 22d.
  • the photoelectric conversion part 2 is produced
  • FIG. 5 is a diagram showing the screen plate 20.
  • the screen plate 20 has openings 190a and 190b and openings 200a to 200d corresponding to the shapes of the bus bars 19a and 19b and the fingers 20a to 20d.
  • the openings 190a, 190b, 200a to 200d are filled with a conductive paste, which is a constituent material of the bus bars 19a and 19b and the fingers 20a to 20d, with a squeegee, and the photoelectric conversion unit 2 has a light receiving surface.
  • Print the conductive paste Specifically, a conductive paste is placed on the screen plate 20 in which the openings 190a, 190b, 200a to 200d are formed, and the squeegee is moved along the printing direction D to move the openings 190a, 190b, 200a to 200d. Fill with conductive paste.
  • the conductive paste remains from the openings 190a, 190b, 200a to 200d and is printed on the light receiving surface, and the bus bars 19a and 19b and the fingers 20a to 20a. 20d is formed.
  • the cross-sectional area S of the finger 20a will be described in detail.
  • the cross-sectional area S means the area of a cross section along the line CC in FIG.
  • the thickness of the screen plate 20 is designed to be constant. Therefore, the cross-sectional area S of the finger 20a is determined by the cross-sectional area of the conductive paste filled in the opening 200a, and is represented by the product of the opening width and the filling thickness of the conductive paste.
  • the change rate of the opening width of the opening 200a of the screen plate 20 increases as the opening 200a approaches the opening 190a corresponding to the bus bar 19a in accordance with the shape of the finger 20a.
  • the cross-sectional area S of the finger 20a increases in accordance with the change rate of the width of the opening 200a of the screen plate 20 as it approaches the bus bar 19a.
  • the distance X from the end part 201 and the cross-sectional area S of the first finger part 203 at the distance X are used along the extending direction of the first finger part 203.
  • the ratio of the change ⁇ S of the cross-sectional area S per unit change amount of the distance X can be expressed as a change rate ⁇ S / ⁇ X.
  • the first finger 203 has a first area 203a in which the cross-sectional area S increases at a multistage change rate, the cross-sectional area S increases at a change rate of ⁇ S 1 / ⁇ X 1, and a change rate of ⁇ S 2 / ⁇ X 2.
  • the change rate ⁇ S 2 / ⁇ X 2 is smaller than the change rate ⁇ S 1 / ⁇ X 1 .
  • the cross-sectional area S of the 1st finger part 203 is large as it approaches the bus-bar 19a, changing linear change rate (DELTA) S / (DELTA) X once or more.
  • the change in the cross-sectional area S of the first finger portion 203 can be made to approach an ideal quadratic function as described later.
  • the line widths of the fingers 20a to 20d are designed so as to suppress the light shielding loss and the power loss.
  • the light blocking loss indicates a loss of light that does not reach the photoelectric conversion unit 2 because sunlight is blocked by the collector electrode 4.
  • the power loss indicates a power loss that occurs when carriers flow through the collector electrode 4 as a current.
  • the power loss P generated when the carriers collected by the fingers 20a to 20d are collected by the bus bars 19a and 19b is I 2 R (I: current value flowing through the fingers 20a to 20d, R: resistance of the fingers 20a to 20d) Value).
  • the resistance value R of the fingers 20a to 20d is a relational expression of ⁇ ⁇ L / S ( ⁇ : electrical resistivity of the fingers 20a to 20d, L: length of the fingers 20a to 20d, S: cross-sectional area of the fingers 20a to 20d) Determined by
  • ⁇ electrical resistivity of the fingers 20a to 20d
  • L length of the fingers 20a to 20d
  • S cross-sectional area of the fingers 20a to 20d
  • a shape suitable for minimizing the power loss P is a shape in which the cross-sectional area S of the fingers 20a to 20d is 0 at the tip portion and increases in a quadratic function as it approaches the bus bars 19a and 19b. is there.
  • the region where the line width is constant is short. The rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached.
  • the increase in the cross-sectional area S of the fingers 20a to 20d can be made closer to an ideal quadratic function as compared to the conventional linear cross-sectional area change.
  • the change in the cross-sectional area S of the fingers 20a to 20d can be made close to a quadratic function.
  • electric power loss can be reduced more.
  • the light shielding loss can be reduced by reducing the line width toward the boundary portion 202 of the fingers 20a to 20d.
  • the line width in the second finger portion 204 to be a rubbing prevention line width, the effective light-shielding loss is reduced, the fingers 20a to 20d are more easily formed, and workability is improved.
  • a preferable value was examined for the ratio of the length of the second finger portion 204 to the total length of the fingers 20a to 20d.
  • the examination result will be described with reference to FIGS.
  • the electrical resistivity ⁇ of the fingers 20a to 20d is set to 8 ⁇ ⁇ cm
  • the number N stack of screen printings is set to 1
  • the sheet resistance R TCO of the transparent conductive layer 11 is set to 50 ⁇
  • the fingers 20a to 20d The length L was 2.036 cm.
  • the minimum width W1 of the second finger portion 204 and the minimum width W2 of the second region 203b of the first finger portion 203 are set to 45 ⁇ m
  • the minimum width W3 of the first region 203a of the first finger portion 203 is set to 80 ⁇ m
  • the first The maximum width W4 of the region 203a was 90 ⁇ m.
  • the output (%) of the solar cell 1 was calculated by changing the ratio of the length L1 of the second finger portion to the total length L of the fingers 20a to 20d.
  • the length L3 of the first region 203a was fixed at 2.36 mm
  • the length L1 of the second finger portion was changed in the range of 0 to 18 mm.
  • FIG. 6 shows the calculation result.
  • L1 / L is an output characteristic diagram when the horizontal axis is L1 / L and the vertical axis is the output (%) of the solar cell 1. Examining this output characteristic diagram, it can be seen that when L1 / L is made larger than 50%, the output is greatly reduced. On the other hand, when L1 / L is 50% or less, the output is stable at 99.9% or more in the entire range. From this, it can be seen that L1 / L may be 0.5 or less, that is, L1 may be 50% or less of L in order to obtain a stable high output.
  • FIG. 8 is a plan view on the light-receiving surface side of a solar cell 1 a which is a first modification of the solar cell 1.
  • the solar cell 1 a has a curved line width at the first finger portion 203.
  • the “curve” includes a state in which the number of regions such as the first region 203a and the second region 203b in the solar cell 1 is increased and the outer shape of the first finger portion 203 is approximated to a curve.
  • the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as it approaches the bus bars 19a and 19b. For this reason, since the change in the cross-sectional area S of the fingers 20a to 20d can be approximated to a quadratic function, the power loss can be further reduced as in the solar cell 1. Similarly to the solar cell 1, the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
  • FIG. 9 is a plan view of the light receiving surface side of a solar cell 1 b which is a second modification of the solar cell 1.
  • solar cell 1 b has bus bars 19 a and 19 b having a zigzag shape.
  • the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached.
  • the power loss can be further reduced as in the solar cell 1.
  • the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
  • FIG. 10 is a cross-sectional view of a photoelectric conversion unit 2a which is a modification of the photoelectric conversion unit 2.
  • the photoelectric conversion unit 2a includes a p-type polycrystalline silicon substrate 241, an n-type diffusion layer 231 formed on the front side of the p-type polycrystalline silicon substrate, and an aluminum formed on the back surface of the p-type polycrystalline silicon substrate 241.
  • the photoelectric conversion unit 18 may have any other shape as long as it has a function of converting sunlight into electricity.
  • FIG. 11 is a plan view of a modification of the collector electrode on the back surface side of the photoelectric conversion unit 2.
  • a metal film 251 covering substantially the entire surface of the transparent conductive film 17 may be formed instead of the fingers 22a to 22d.

Abstract

A solar cell (1) is provided with a photoelectric conversion unit (2), and a collecting electrode (4), which is provided on the main surface of the photoelectric conversion unit (2). The collecting electrode (4) includes bus bars (19a, 19b), and fingers (20a-20d) that intersect the bus bars (19a, 19b), and each of the fingers (20a-20d) has a first finger portion (203), which extends with the line width thereof reduced toward the side away from the bus bar (19a, 19b) side, and a second finger portion (204), which continuously extends from the first finger portion (203), while maintaining the line width of a boundary portion (202) between the first finger portion (203) and the second finger portion. The length of the second finger portion (204) is shorter than that of the first finger portion (203).

Description

太陽電池Solar cell
　本発明は、太陽電池に関する。 The present invention relates to a solar cell.
　特許文献１には、基板上に設けられたバスバーとフィンガーとからなる集電極を備えた太陽電池が開示されている。フィンガーは、第一端と第二端を有している。第一端は、フィンガーのうち、バスバーと連結している部分である。第二端は、フィンガーのうち、バスバーから最も離れた部分である。フィンガーは、第一端から第二端に向けて単調に幅が細くなるように構成されている。 Patent Document 1 discloses a solar cell including a collector electrode composed of a bus bar and fingers provided on a substrate. The finger has a first end and a second end. The first end is a portion of the finger that is connected to the bus bar. The second end is the part of the finger that is farthest from the bus bar. The fingers are configured so that the width decreases monotonously from the first end toward the second end.
実用新案登録第３１５４１４５号Utility Model Registration No. 3154145
　フィンガーで集電される電流はバスバーに近づくにつれて大きくなる。前述のフィンガーは、電流とフィンガーの抵抗とによる電力ロスを十分に低減させるように最適化されていない。 The current collected by the fingers increases as it approaches the bus bar. The aforementioned fingers are not optimized to sufficiently reduce power loss due to current and finger resistance.
　本発明に係る太陽電池は、光電変換部と、光電変換部の主面上に設けられる集電極と、を備え、集電極は、バスバーと、バスバーと交わるフィンガーと、を含み、フィンガーは、バスバー側から離れるにつれて線幅が細くなるように延設された第１フィンガー部と、第１フィンガー部との境界部の線幅を維持したまま、第１フィンガー部から連続的に延設された第２フィンガー部と、を有し、第２フィンガー部は、第１フィンガー部の長さよりも短い。 A solar cell according to the present invention includes a photoelectric conversion unit and a collector electrode provided on a main surface of the photoelectric conversion unit, and the collector electrode includes a bus bar and a finger that intersects with the bus bar. The first finger portion extended so that the line width becomes narrower with increasing distance from the side, and the first finger portion continuously extending from the first finger portion while maintaining the line width at the boundary between the first finger portion and the first finger portion. 2 finger parts, and the 2nd finger part is shorter than the length of the 1st finger part.
　本発明によれば、太陽電池の出力を向上させることができる。 According to the present invention, the output of the solar cell can be improved.
実施形態に係る太陽電池の受光面側の平面図である。It is a top view by the side of the light-receiving surface of the solar cell which concerns on embodiment. 実施形態に係る太陽電池の裏面側の平面図である。It is a top view of the back surface side of the solar cell which concerns on embodiment. 図１及び図２におけるＡ－Ａ線断面図である。FIG. 3 is a cross-sectional view taken along line AA in FIGS. 1 and 2. 図１におけるＢ－Ｂ線断面図である。FIG. 3 is a sectional view taken along line BB in FIG. 実施形態に係る太陽電池を製造する際に用いられるスクリーン版を示す図である。It is a figure which shows the screen plate used when manufacturing the solar cell which concerns on embodiment. 実施形態に係る太陽電池のフィンガーの拡大図である。It is an enlarged view of the finger of the solar cell concerning an embodiment. 実施形態に係る太陽電池において、横軸をＬ１／Ｌとし、縦軸を太陽電池の出力（％）とした場合の出力特性図である。In the solar cell which concerns on embodiment, it is an output characteristic figure when a horizontal axis is set to L1 / L and a vertical axis | shaft is made into the output (%) of a solar cell. 実施形態に係る太陽電池の第１変形例の受光面側の平面図である。It is a top view by the side of the light-receiving surface of the 1st modification of the solar cell which concerns on embodiment. 実施形態に係る太陽電池の第２変形例の受光面側の平面図である。It is a top view by the side of the light-receiving surface of the 2nd modification of the solar cell which concerns on embodiment. 実施形態に係る太陽電池の光電変換部の変形例の断面図である。It is sectional drawing of the modification of the photoelectric conversion part of the solar cell which concerns on embodiment. 実施形態に係る太陽電池の裏面側にある集電極の変形例の平面図である。It is a top view of the modification of the collector electrode in the back surface side of the solar cell which concerns on embodiment.
　以下に図面を用いて、実施の形態を詳細に説明する。同様の要素には同一の符号を付し、重複する説明は省略する。 Hereinafter, embodiments will be described in detail with reference to the drawings. Similar elements are denoted by the same reference numerals, and redundant description is omitted.
　図１は、太陽電池１の受光面側の平面図である。図２は、太陽電池１の裏面側の平面図である。図３は、図１及び図２におけるＡ－Ａ線断面図である。以下、「受光面」とは、太陽光の光が主に入射される側の主面を意味する。これに対して、「裏面」とは、受光面と反対側の主面を意味する。 FIG. 1 is a plan view of the light-receiving surface side of the solar cell 1. FIG. 2 is a plan view of the back surface side of the solar cell 1. FIG. 3 is a cross-sectional view taken along line AA in FIGS. Hereinafter, the “light-receiving surface” means a main surface on the side on which sunlight is mainly incident. On the other hand, the “back surface” means a main surface opposite to the light receiving surface.
　太陽電池１は、光電変換部２と、光電変換部２の受光面上に設けられた集電極４と、光電変換部２の裏面上に設けられた集電極６とを備える。ここで、層、膜、領域等の部分が他の部分の「上に」あるという場合は、直接積層されている場合だけではなく、その間に別の部分がある場合も含む。 The solar cell 1 includes a photoelectric conversion unit 2, a collector electrode 4 provided on the light receiving surface of the photoelectric conversion unit 2, and a collector electrode 6 provided on the back surface of the photoelectric conversion unit 2. Here, the case where a part such as a layer, a film, or a region is “on” another part includes not only a case where the part is directly stacked, but also a case where another part exists between them.
　光電変換部２は、受光面側から、透明導電膜１１と、ｐ型非晶質シリコン膜１２と、ｉ型非晶質シリコン膜１３と、ｎ型単結晶シリコン基板１４と、ｉ型非晶質シリコン膜１５と、ｎ型非晶質シリコン膜１６と、透明導電膜１７とを備える。ｎ型単結晶シリコン基板１４は、光を受けてキャリアを生成する発電層である。発電層は、ｎ型単結晶シリコン基板１４に限定されない。例えば、発電層は、ｎ型又はｐ型のいずれの導電型でもよい。また、発電層は、結晶系半導体基板、多結晶シリコン基板、砒化ガリウム（ＧａＡｓ）基板、インジウム燐（ＩｎＰ）基板のいずれかであってよい。ｉ型非晶質シリコン膜１３は、ｎ型単結晶シリコン基板１４の受光面上に形成される。ｉ型非晶質シリコン膜１３は、真性なアモルファスシリコン膜である。ｐ型非晶質シリコン膜１２は、ｉ型非晶質シリコン膜１３上に形成される。ｐ型非晶質シリコン膜１２は、ｐ型不純物がドープされたアモルファスシリコン膜である。透明導電膜１１は、ｐ型非晶質シリコン膜１２上に形成される。透明導電膜１１は、例えば、酸化インジウム（Ｉｎ2Ｏ3）、酸化亜鉛（ＺｎＯ）、酸化錫（ＳｎＯ2）、及び酸化チタン（ＴｉＯ2）等の金属酸化物のうちの少なくとも１つを含む。ｉ型非晶質シリコン膜１５は、ｎ型単結晶シリコン基板１４の裏面上に形成される。ｉ型非晶質シリコン膜１５は、真性なアモルファスシリコン膜である。ｎ型非晶質シリコン膜１６は、ｉ型非晶質シリコン膜１５上に形成される。ｎ型非晶質シリコン膜１６は、ｎ型不純物がドープされたアモルファスシリコン膜である。透明導電膜１７は、ｎ型非晶質シリコン膜１６上に形成される。透明導電膜１７は、透明導電膜１１と同様の材料を含む。 The photoelectric conversion unit 2 includes a transparent conductive film 11, a p-type amorphous silicon film 12, an i-type amorphous silicon film 13, an n-type single crystal silicon substrate 14, and an i-type amorphous material from the light receiving surface side. A silicon film 15, an n-type amorphous silicon film 16, and a transparent conductive film 17. The n-type single crystal silicon substrate 14 is a power generation layer that receives light and generates carriers. The power generation layer is not limited to the n-type single crystal silicon substrate 14. For example, the power generation layer may be either n-type or p-type conductivity type. The power generation layer may be any of a crystalline semiconductor substrate, a polycrystalline silicon substrate, a gallium arsenide (GaAs) substrate, and an indium phosphide (InP) substrate. The i-type amorphous silicon film 13 is formed on the light-receiving surface of the n-type single crystal silicon substrate 14. The i-type amorphous silicon film 13 is an intrinsic amorphous silicon film. The p-type amorphous silicon film 12 is formed on the i-type amorphous silicon film 13. The p-type amorphous silicon film 12 is an amorphous silicon film doped with p-type impurities. The transparent conductive film 11 is formed on the p-type amorphous silicon film 12. The transparent conductive film 11 includes at least one of metal oxides such as indium oxide (In 2 O 3 ), zinc oxide (ZnO), tin oxide (SnO 2 ), and titanium oxide (TiO 2 ). . The i-type amorphous silicon film 15 is formed on the back surface of the n-type single crystal silicon substrate 14. The i-type amorphous silicon film 15 is an intrinsic amorphous silicon film. The n-type amorphous silicon film 16 is formed on the i-type amorphous silicon film 15. The n-type amorphous silicon film 16 is an amorphous silicon film doped with n-type impurities. The transparent conductive film 17 is formed on the n-type amorphous silicon film 16. The transparent conductive film 17 includes the same material as that of the transparent conductive film 11.
　集電極４は、透明導電膜１１上に形成される。集電極４は、導電材料であって、例えば、銀（Ａｇ）、銅（Ｃｕ）、アルミニウム（Ａｌ）、チタン（Ｔｉ）、ニッケル（Ｎｉ）及びクロム（Ｃｒ）等の金属や、これらの金属のうちの一種類以上を含む合金によって構成することができる。集電極４は、バスバー１９ａ，１９ｂと、フィンガー２０ａ～２０ｄとを含む。バスバー１９ａ，１９ｂは、光電変換部２において生成されたキャリアを取り出すために設けられる。フィンガー２０ａ～２０ｄにおいて集電されたキャリアをできるだけ均等に集電するように、バスバー１９ａ，１９ｂは、所定の間隔をあけて平行に配置される。例えば、バスバー１９ａは光電変換部２の主面を二分した場合の左半分の中心に配置され、バスバー１９ｂは、右半分の中心に配置される。バスバー１９ａ，１９ｂの幅は、１ｍｍとされる。フィンガー２０ａ～２０ｄは、光電変換部２において生成されたキャリアを収集するために設けられる。フィンガー２０ａ～２０ｄは、バスバー１９ａ，１９ｂと交わって電気的に接続されるように配置される。フィンガー２０ａ～２０ｄは、光電変換部２の面内からまんべんなく集電が行われるように、それぞれ所定の間隔をあけて平行に配置される。例えば、バスバー１９ａ，１９ｂの短手方向に沿って並んだフィンガー２０ａ～２０ｄを１組とすると、ｎ組のフィンガー２０ａ～２０ｄが光電変換部２の主面の領域を（ｎ＋１）等分するように配置される。複数のフィンガー２０ａは、例えば、２ｍｍの間隔で互いに並列に配列される。集電極６は、集電極４と同一の構成であってもよいし、幅、材料または形状など一部において異なる構成を含んでもよい。 The collecting electrode 4 is formed on the transparent conductive film 11. The collector electrode 4 is a conductive material, for example, a metal such as silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), nickel (Ni) and chromium (Cr), or these metals. It can comprise with the alloy containing 1 or more types of these. The collector electrode 4 includes bus bars 19a and 19b and fingers 20a to 20d. The bus bars 19a and 19b are provided to take out the carriers generated in the photoelectric conversion unit 2. The bus bars 19a and 19b are arranged in parallel with a predetermined interval so as to collect the current collected by the fingers 20a to 20d as evenly as possible. For example, the bus bar 19a is arranged at the center of the left half when the main surface of the photoelectric conversion unit 2 is divided into two, and the bus bar 19b is arranged at the center of the right half. The width of the bus bars 19a and 19b is 1 mm. The fingers 20a to 20d are provided to collect carriers generated in the photoelectric conversion unit 2. The fingers 20a to 20d are arranged so as to cross the bus bars 19a and 19b and be electrically connected. The fingers 20a to 20d are arranged in parallel at predetermined intervals so that current can be collected evenly from the surface of the photoelectric conversion unit 2. For example, if the fingers 20a to 20d arranged along the short direction of the bus bars 19a and 19b are set as one set, the n sets of fingers 20a to 20d divide the area of the main surface of the photoelectric conversion unit 2 into (n + 1) equal parts. Placed in. The plurality of fingers 20a are arranged in parallel with each other at an interval of 2 mm, for example. The collector electrode 6 may have the same configuration as that of the collector electrode 4, or may include a configuration that is partially different in terms of width, material, or shape.
　ここで、図１を参照して、フィンガー２０ａの平面形状について詳述する。フィンガー２０ａは、その延設方向に沿って線幅が変化し、第１フィンガー部２０３と第２フィンガー部２０４とを含む。ここでいう線幅とは、フィンガー２０ａ～２０ｄを平面上から見たときのフィンガー２０ａ～２０ｄの短手方向の長さを意味する。第１フィンガー部２０３は、多段階に分かれて線幅の変化率が変わり、バスバー１９ａ側から離れるにつれて線幅が徐々に細くなるように延設される。第１フィンガー部２０３は、端部２０１においてバスバー１９ａに接続される。端部２０１は、第１フィンガー部２０３の中で最も幅が広い部分である。境界部２０２は、第１フィンガー部２０３において最も幅が狭い部分である。端部２０１からの距離Ｘと、距離Ｘにおける第１フィンガー部２０３の線幅Ｙと、を用いて第１フィンガー部２０３の延設方向に沿った距離Ｘの単位変化量当たりの線幅Ｙの変化ΔＹの割合を変化率ΔＹ／ΔＸとして表すことができる。第１フィンガー部２０３は、多段階の変化率で線幅Ｙが細くなり、ΔＹ1／ΔＸ1の変化率で線幅Ｙが小さくなる第１領域２０３ａと、ΔＹ2／ΔＸ2の変化率で線幅Ｙが小さくなる第２領域２０３ｂとを有する。すなわち、第１フィンガー部２０３は、端部２０１から変化率ΔＹ1／ΔＸ1で線幅が細くなり、途中で変化率ΔＹ1／ΔＸ1とは異なる変化率である変化率ΔＹ2／ΔＸ2で線幅が細くなる。変化率ΔＹ2／ΔＸ2は、変化率ΔＹ1／ΔＸ1より小さい。換言すれば、第１フィンガー部２０３は、バスバー１９ａ側に近づくにつれて線幅の変化率が大きくなっていく。第２フィンガー部２０４は、第１フィンガー部２０３との境界部２０２から連続して、その線幅を第１フィンガー部２０３の境界部２０２の線幅に維持したままフィンガー２０ａの長手方向に延設される。すなわち、端部２０１からの距離Ｘ3、距離Ｘ3における第２フィンガー部２０４の線幅Ｙ3である場合、第２フィンガー部２０４の延設方向に沿った距離Ｘ3の単位変化量当たりの線幅の変化ΔＹ3の割合を示す変化率ΔＹ3／ΔＸ3は０である。第１フィンガー部２０３の境界部２０２及び第２フィンガー部２０４の線幅は、スクリーン印刷をした際に印刷擦れが生じないような擦れ防止線幅以上とする。ここでいう印刷擦れとは、フィンガー２０ａが形成する際に一部が欠落してしまう等の印刷不具合である。図１から分かるように、フィンガー２０ａの第２フィンガー部２０４の長さは、フィンガー２０ａの第１フィンガー部２０３の長さよりも短い。なお、フィンガー２０ａと同様に、フィンガー２０ｂ、２０ｃおよび２０ｄも、端部２０１、境界部２０２を含んだ第１フィンガー部２０３と、第２フィンガー部２０４を含んでいる。さらに、フィンガー２０ｂ，２０ｃは、フィンガー２０ｂの第２フィンガー部２０４とフィンガー２０ｃの第２フィンガー部２０４とが接続された接続部２０５を含んでいる。接続部２０５からバスバー１９ａに向かって延びるフィンガー２０ｂの長さと、接続部２０５からバスバー１９ｂに向かって延びるフィンガー２０ｃの長さとは、同じである。フィンガー２０ｄは、フィンガー２０ａと同様に、端部２０１，境界部２０２を含んだ第１フィンガー部２０３と、第２フィンガー部２０４を含み、フィンガー２０ａと反対方向に延びている。 Here, the planar shape of the finger 20a will be described in detail with reference to FIG. The finger 20 a has a line width that changes along its extending direction, and includes a first finger portion 203 and a second finger portion 204. The line width here means the length in the short direction of the fingers 20a to 20d when the fingers 20a to 20d are viewed from above. The first finger portion 203 is divided into multiple stages so that the change rate of the line width changes, and is extended so that the line width gradually decreases as the distance from the bus bar 19a side increases. The first finger 203 is connected to the bus bar 19a at the end 201. The end part 201 is the widest part in the first finger part 203. The boundary portion 202 is a portion having the narrowest width in the first finger portion 203. Using the distance X from the end 201 and the line width Y of the first finger part 203 at the distance X, the line width Y per unit change amount of the distance X along the extending direction of the first finger part 203 The ratio of change ΔY can be expressed as change rate ΔY / ΔX. The first finger portion 203 has a first region 203a in which the line width Y is reduced at a multi-stage change rate and the line width Y is reduced at a change rate of ΔY 1 / ΔX 1, and a change rate of ΔY 2 / ΔX 2. A second region 203b in which the line width Y is reduced. That is, the first finger portion 203 has a line width that becomes narrower from the end 201 at a change rate ΔY 1 / ΔX 1, and a change rate ΔY 2 / ΔX 2 that is a change rate different from the change rate ΔY 1 / ΔX 1 on the way. The line width becomes narrower. The change rate ΔY 2 / ΔX 2 is smaller than the change rate ΔY 1 / ΔX 1 . In other words, the rate of change in line width of the first finger portion 203 increases as it approaches the bus bar 19a side. The second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the line width at the line width of the boundary portion 202 of the first finger portion 203. Is done. That is, the distance X 3 from the end portion 201, a distance when the X 3 is a line width Y 3 of the second finger portions 204, per unit change amount of the distance X 3 along the extending direction of the second finger portion 204 the rate of change [Delta] Y 3 / [Delta] X 3 showing the rate of change [Delta] Y 3 line width is zero. The line widths of the boundary part 202 and the second finger part 204 of the first finger part 203 are not less than a rubbing prevention line width that does not cause printing rubbing when screen printing is performed. The printing rubbing referred to here is a printing defect such as a part missing when the finger 20a is formed. As can be seen from FIG. 1, the length of the second finger portion 204 of the finger 20a is shorter than the length of the first finger portion 203 of the finger 20a. Similarly to the finger 20a, the fingers 20b, 20c, and 20d also include a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204. Furthermore, the fingers 20b and 20c include a connecting portion 205 to which the second finger portion 204 of the finger 20b and the second finger portion 204 of the finger 20c are connected. The length of the finger 20b extending from the connecting portion 205 toward the bus bar 19a is the same as the length of the finger 20c extending from the connecting portion 205 toward the bus bar 19b. Similarly to the finger 20a, the finger 20d includes a first finger portion 203 including an end portion 201 and a boundary portion 202, and a second finger portion 204, and extends in a direction opposite to the finger 20a.
　続いて、図４を参照して、フィンガー２０ａの断面形状について詳述する。図４は、図１のＢ－Ｂ線断面図であり、フィンガー２０ａの断面図を示している。第１フィンガー部２０３の厚みは、線幅が大きい端部２０１で最も厚く、境界部２０２に向けて連続的に薄くなり、境界部２０２で最も薄くなる。端部２０１からの距離Ｘと、距離Ｘにおける第１フィンガー部２０３の厚みＺと、を用いて第１フィンガー部２０３の延設方向に沿った距離Ｘの単位変化量当たりの厚みＺの変化ΔＺの割合を変化率ΔＺ／ΔＸとして表すことができる。第１フィンガー部２０３は、多段階の変化率で厚みＺが薄くなり、ΔＺ1／ΔＸ1の変化率で厚みＺが小さくなる第１領域２０３ａと、ΔＺ2／ΔＸ2の変化率で厚みＺが小さくなる第２領域２０３ｂとを有する。すなわち、第１フィンガー部２０３は、端部２０１から変化率ΔＺ1／ΔＸ1で厚みが薄くなり、途中で変化率ΔＺ1／ΔＸ1とは異なる変化率である変化率ΔＺ2／ΔＸ2で厚みが薄くなる。変化率Ｚ2／ΔＸ2は、変化率ΔＺ1／ΔＸ1より小さい。換言すれば、第１フィンガー部２０３は、バスバー１９ａ側に近づくにつれて厚みの変化率が大きくなっていく。また、第２フィンガー部２０４は、第１フィンガー部２０３との境界部２０２から連続して、その厚みを第１フィンガー部２０３の境界部２０２の厚みに維持したままフィンガー２０ａの長手方向に延設される。すなわち、端部２０１からの距離Ｘ3、距離Ｘ3における第２フィンガー部２０４の厚みＺ3である場合、第２フィンガー部２０４の延設方向に沿った距離Ｘ3の単位変化量当たりの厚みの変化ΔＺ3の割合を示す変化率ΔＺ3／ΔＸ3は０である。第２フィンガー部２０４の厚みは、予め定められた最小厚み以上とする。 Then, with reference to FIG. 4, the cross-sectional shape of the finger 20a is explained in full detail. 4 is a cross-sectional view taken along the line BB of FIG. 1 and shows a cross-sectional view of the finger 20a. The thickness of the first finger portion 203 is thickest at the end portion 201 having a large line width, continuously thins toward the boundary portion 202, and thinnest at the boundary portion 202. The change ΔZ of the thickness Z per unit change amount of the distance X along the extending direction of the first finger portion 203 using the distance X from the end portion 201 and the thickness Z of the first finger portion 203 at the distance X. Can be expressed as a change rate ΔZ / ΔX. The first finger portion 203 has a first region 203a in which the thickness Z is reduced at a multistage change rate, and the thickness Z is reduced at a change rate of ΔZ 1 / ΔX 1 , and a thickness Z at a change rate of ΔZ 2 / ΔX 2. And a second region 203b that becomes smaller. That is, the first finger 203, thickness becomes thin in the rate of change [Delta] Z 1 / [Delta] X 1 from the end portion 201, on the way for a change rate [Delta] Z 1 / [Delta] X 1 is different from the rate of change and the rate of change [Delta] Z 2 / [Delta] X 2 The thickness is reduced. The rate of change Z 2 / ΔX 2 is smaller than the rate of change ΔZ 1 / ΔX 1 . In other words, the rate of change in thickness of the first finger portion 203 increases as it approaches the bus bar 19a side. The second finger portion 204 extends continuously from the boundary portion 202 with the first finger portion 203 and extends in the longitudinal direction of the finger 20a while maintaining the thickness of the boundary portion 202 of the first finger portion 203. Is done. That is, the distance X 3 from the end portion 201, when the distance X 3 is the thickness Z 3 of the second finger portion 204, the thickness of the unit change amount per distance X 3 along the extending direction of the second finger portion 204 The change rate ΔZ 3 / ΔX 3 indicating the ratio of the change ΔZ 3 is zero. The thickness of the 2nd finger part 204 shall be more than predetermined minimum thickness.
　複数のフィンガー２２ａ～２２ｄは、複数のフィンガー２０ａ～２０ｄに比べて間隔が狭く設定されている。例えば、複数のフィンガー２２ａ～２２ｄは、１ｍｍの間隔で互いに並列に配列される。フィンガー２２ａ～２２ｄは、フィンガー２０ａ～２０ｄと同様にその延設方向に沿って線幅が変化し、第１フィンガー部２２３と第２フィンガー部２２４とを含む。フィンガー２２ａ～２２ｄは、上述したように、複数のフィンガー２０ａ～２０ｄに比べて間隔が狭く設定されているため、１本のフィンガー２２ａ～２２ｄ当たりに集電されるキャリアの数は少なくなる。したがって、フィンガー２２ａ～２２ｄの線幅は、フィンガー２０ａ～２０ｄの線幅に比べて細くすることができるため、最も細い線幅の第２フィンガー部２２４のフィンガー２２ａ～２２ｄの長さが長く設定されている。すなわち、図１及び図２から分かるように、フィンガー２０ａ～２０ｄの第２フィンガー部２０４の長さとフィンガー２２ａ～２２ｄの第２フィンガー部２２４の長さを比較すると、フィンガー２０ａ～２０ｄの第２フィンガー部２０４の長さは、フィンガー２２ａ～２２ｄの第２フィンガー部２２４の長さに比べて短い。 The intervals between the plurality of fingers 22a to 22d are set narrower than the plurality of fingers 20a to 20d. For example, the plurality of fingers 22a to 22d are arranged in parallel with each other at an interval of 1 mm. Like the fingers 20a to 20d, the fingers 22a to 22d change in line width along the extending direction, and include a first finger portion 223 and a second finger portion 224. As described above, since the intervals between the fingers 22a to 22d are set narrower than the plurality of fingers 20a to 20d, the number of carriers collected per one finger 22a to 22d is reduced. Accordingly, since the line width of the fingers 22a to 22d can be made thinner than the line width of the fingers 20a to 20d, the length of the fingers 22a to 22d of the second finger portion 224 having the narrowest line width is set to be long. ing. That is, as can be seen from FIGS. 1 and 2, when the lengths of the second finger portions 204 of the fingers 20a to 20d are compared with the lengths of the second finger portions 224 of the fingers 22a to 22d, the second fingers of the fingers 20a to 20d are compared. The length of the portion 204 is shorter than the length of the second finger portion 224 of the fingers 22a to 22d.
　太陽電池１の製造方法について説明する。ＣＶＤ法及びスパッタリング法等を用いて、光電変換部２を生成する。その後、スクリーン版２０を用いたスクリーン印刷法によって、光電変換部２の透明導電膜１１，１７上に、それぞれ集電極４，６を形成する。 A method for manufacturing the solar cell 1 will be described. The photoelectric conversion part 2 is produced | generated using CVD method, sputtering method, etc. Thereafter, collector electrodes 4 and 6 are respectively formed on the transparent conductive films 11 and 17 of the photoelectric conversion unit 2 by a screen printing method using the screen plate 20.
　ここで、図５を参照して、集電極４を構成するバスバー１９ａ，１９ｂ及びフィンガー２０ａ～２０ｄの形成方法について具体的に説明する。なお、集電極６の形成方法は、集電極４と同様の手順であるため詳細な説明は省略する。図５は、スクリーン版２０を示す図である。スクリーン版２０は、バスバー１９ａ，１９ｂ及びフィンガー２０ａ～２０ｄの形状に対応する開口部１９０ａ，１９０ｂ及び開口部２００ａ～２００ｄを有する。このスクリーン版２０を用いて、開口部１９０ａ，１９０ｂ，２００ａ～２００ｄにバスバー１９ａ，１９ｂ及びフィンガー２０ａ～２０ｄの構成材である導電性ペーストをスキージによって充填し、光電変換部２の受光面上に導電性ペーストを印刷する。具体的には、開口部１９０ａ，１９０ｂ，２００ａ～２００ｄが形成されたスクリーン版２０上に導電性ペーストを載せ、印刷方向Ｄに沿ってスキージを動かすことにより開口部１９０ａ，１９０ｂ，２００ａ～２００ｄに導電性ペーストを充填する。スクリーン版２０のうちスキージが通り過ぎた部分が受光面から離れるときに、開口部１９０ａ，１９０ｂ，２００ａ～２００ｄから導電性ペーストが残存されて受光面上に印刷され、バスバー１９ａ，１９ｂ及びフィンガー２０ａ～２０ｄが形成される。 Here, with reference to FIG. 5, a method for forming the bus bars 19a and 19b and the fingers 20a to 20d constituting the collector electrode 4 will be described in detail. In addition, since the formation method of the collector electrode 6 is the same procedure as the collector electrode 4, detailed description is abbreviate | omitted. FIG. 5 is a diagram showing the screen plate 20. The screen plate 20 has openings 190a and 190b and openings 200a to 200d corresponding to the shapes of the bus bars 19a and 19b and the fingers 20a to 20d. Using this screen plate 20, the openings 190a, 190b, 200a to 200d are filled with a conductive paste, which is a constituent material of the bus bars 19a and 19b and the fingers 20a to 20d, with a squeegee, and the photoelectric conversion unit 2 has a light receiving surface. Print the conductive paste. Specifically, a conductive paste is placed on the screen plate 20 in which the openings 190a, 190b, 200a to 200d are formed, and the squeegee is moved along the printing direction D to move the openings 190a, 190b, 200a to 200d. Fill with conductive paste. When the portion of the screen plate 20 where the squeegee has passed leaves the light receiving surface, the conductive paste remains from the openings 190a, 190b, 200a to 200d and is printed on the light receiving surface, and the bus bars 19a and 19b and the fingers 20a to 20a. 20d is formed.
　フィンガー２０ａの断面積Ｓについて詳述する。断面積Ｓは、図１のＣ－Ｃ線に沿った断面の面積を意味する。スクリーン版２０の厚みは、一定になるように設計されている。したがって、フィンガー２０ａの断面積Ｓは、開口部２００ａに充填される導電性ペーストの断面積によって決まり、開口幅と導電性ペーストの充填厚さとの積で表される。ここで、スクリーン版２０の開口部２００ａは、フィンガー２０ａの形状に合わせて、バスバー１９ａに対応する開口部１９０ａに近づくにつれて開口幅の変化率が大きくなる。したがって、フィンガー２０ａの断面積Ｓは、バスバー１９ａに近づくにつれてスクリーン版２０の開口部２００ａの幅の変化率に合わせて大きくなる。具体的には、第１フィンガー部２０３において、端部２０１からの距離Ｘと、距離Ｘにおける第１フィンガー部２０３の断面積Ｓと、を用いて第１フィンガー部２０３の延設方向に沿った距離Ｘの単位変化量当たりの断面積Ｓの変化ΔＳの割合を変化率ΔＳ／ΔＸとして表すことができる。第１フィンガー部２０３は、多段階の変化率で断面積Ｓが大きくなり、ΔＳ1／ΔＸ1の変化率で断面積Ｓが大きくなる第１領域２０３ａと、ΔＳ2／ΔＸ2の変化率で断面積Ｓが大きくなる第２領域２０３ｂとを有する。変化率ΔＳ2／ΔＸ2は、変化率ΔＳ1／ΔＸ1より小さい。換言すれば、第１フィンガー部２０３の断面積Ｓは、直線的な変化率ΔＳ／ΔＸを一回以上変えながら、バスバー１９ａに近づくにつれて大きくなっている。また、直線的な変化率ΔＳ／ΔＸを増やすことで、第１フィンガー部２０３の断面積Ｓの変化を、後述するような理想的な二次関数に近づくようにすることができる。なお、このように直線的な変化率ΔＳ／ΔＸを増やすことで理想的な二次関数に近づけることが可能であるとともに、第１フィンガー部２０３の外形が曲線であるような後述する太陽電池１ａに比べて容易に形成することができる。 The cross-sectional area S of the finger 20a will be described in detail. The cross-sectional area S means the area of a cross section along the line CC in FIG. The thickness of the screen plate 20 is designed to be constant. Therefore, the cross-sectional area S of the finger 20a is determined by the cross-sectional area of the conductive paste filled in the opening 200a, and is represented by the product of the opening width and the filling thickness of the conductive paste. Here, the change rate of the opening width of the opening 200a of the screen plate 20 increases as the opening 200a approaches the opening 190a corresponding to the bus bar 19a in accordance with the shape of the finger 20a. Therefore, the cross-sectional area S of the finger 20a increases in accordance with the change rate of the width of the opening 200a of the screen plate 20 as it approaches the bus bar 19a. Specifically, in the first finger part 203, the distance X from the end part 201 and the cross-sectional area S of the first finger part 203 at the distance X are used along the extending direction of the first finger part 203. The ratio of the change ΔS of the cross-sectional area S per unit change amount of the distance X can be expressed as a change rate ΔS / ΔX. The first finger 203 has a first area 203a in which the cross-sectional area S increases at a multistage change rate, the cross-sectional area S increases at a change rate of ΔS 1 / ΔX 1, and a change rate of ΔS 2 / ΔX 2. A second region 203b in which the cross-sectional area S increases. The change rate ΔS 2 / ΔX 2 is smaller than the change rate ΔS 1 / ΔX 1 . In other words, the cross-sectional area S of the 1st finger part 203 is large as it approaches the bus-bar 19a, changing linear change rate (DELTA) S / (DELTA) X once or more. Further, by increasing the linear change rate ΔS / ΔX, the change in the cross-sectional area S of the first finger portion 203 can be made to approach an ideal quadratic function as described later. In addition, it is possible to approximate an ideal quadratic function by increasing the linear change rate ΔS / ΔX as described above, and a solar cell 1a described later in which the outer shape of the first finger portion 203 is a curve. It can be formed more easily than
　続いて、太陽電池１の作用について説明する。太陽電池１の受光面側では、遮光ロス及び電力ロスを抑制するようにフィンガー２０ａ～２０ｄの線幅が設計される。遮光ロスとは、太陽光が集電極４によって遮られることで、光電変換部２まで到達しない光の損失を示す。電力ロスとは、キャリアが電流として集電極４を流れた際に生ずる電力の損失を示す。フィンガー２０ａ～２０ｄによって集電されたキャリアがバスバー１９ａ，１９ｂに収集される際に生じる電力ロスＰは、Ｉ2Ｒ（Ｉ：フィンガー２０ａ～２０ｄを流れる電流値、Ｒ：フィンガー２０ａ～２０ｄの抵抗値）の関係式により定まる。フィンガー２０ａ～２０ｄの抵抗値Ｒは、ρ×Ｌ／Ｓ（ρ：フィンガー２０ａ～２０ｄの電気抵抗率、Ｌ：フィンガー２０ａ～２０ｄの長さ、Ｓ：フィンガー２０ａ～２０ｄの断面積）の関係式により定める。ここで、フィンガー２０ａ～２０ｄでは、バスバー１９ａ，１９ｂ側に近づくと取り込まれる電流量が直線的に増加する。このため、フィンガー２０ａ～２０ｄでは流れる電流量に応じ電力ロスＰが小さくなるように、フィンガー２０ａ～２０ｄの断面積Ｓが大きくされる。電力ロスＰは、電流値Ｉの二次関数である。電流値Ｉの大きさは直線的にバスバー１９ａ，１９ｂ側に近づくにつれて大きくなる。したがって、電力ロスＰを最小とするために適した形状は、フィンガー２０ａ～２０ｄの断面積Ｓが、先端部分において０であり、バスバー１９ａ，１９ｂ側に近づくにつれて二次関数的に大きくなる形状である。本実施の形態では、上述したように、第２フィンガー部２０４の長さは、第１フィンガー部２０３の長さより短いため、線幅が一定（擦れ防止線幅）の領域が短い。そして、フィンガー２０ａ～２０ｄの断面積Ｓの変化率は、バスバー１９ａ，１９ｂに近づくにつれて大きくなる。このため、従来の直線的な断面積の変化に比べて、フィンガー２０ａ～２０ｄの断面積Ｓの増加を理想的な二次関数に近づけることができる。特に、集電される電流がより大きくなるバスバー１９ａ，１９ｂに近い第１フィンガー部２０３において、フィンガー２０ａ～２０ｄの断面積Ｓの変化を二次関数に近づけることができる。これにより、より電力ロスを低減することができる。さらに、本実施の形態では、フィンガー２０ａ～２０ｄの境界部２０２に向かって線幅を減少させることによって遮光ロスを低減させることができる。このとき、第２フィンガー部２０４における線幅を擦れ防止線幅とすることで実効的な遮光ロスの低減と共に、フィンガー２０ａ～２０ｄをより形成し易くし、加工性を向上させている。 Then, the effect | action of the solar cell 1 is demonstrated. On the light-receiving surface side of the solar cell 1, the line widths of the fingers 20a to 20d are designed so as to suppress the light shielding loss and the power loss. The light blocking loss indicates a loss of light that does not reach the photoelectric conversion unit 2 because sunlight is blocked by the collector electrode 4. The power loss indicates a power loss that occurs when carriers flow through the collector electrode 4 as a current. The power loss P generated when the carriers collected by the fingers 20a to 20d are collected by the bus bars 19a and 19b is I 2 R (I: current value flowing through the fingers 20a to 20d, R: resistance of the fingers 20a to 20d) Value). The resistance value R of the fingers 20a to 20d is a relational expression of ρ × L / S (ρ: electrical resistivity of the fingers 20a to 20d, L: length of the fingers 20a to 20d, S: cross-sectional area of the fingers 20a to 20d) Determined by Here, in the fingers 20a to 20d, the amount of current taken increases linearly when approaching the bus bars 19a and 19b. For this reason, the cross-sectional areas S of the fingers 20a to 20d are increased so that the power loss P decreases according to the amount of current flowing in the fingers 20a to 20d. The power loss P is a quadratic function of the current value I. The magnitude of the current value I increases linearly toward the bus bars 19a, 19b. Therefore, a shape suitable for minimizing the power loss P is a shape in which the cross-sectional area S of the fingers 20a to 20d is 0 at the tip portion and increases in a quadratic function as it approaches the bus bars 19a and 19b. is there. In the present embodiment, as described above, since the length of the second finger portion 204 is shorter than the length of the first finger portion 203, the region where the line width is constant (rubbing prevention line width) is short. The rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached. For this reason, the increase in the cross-sectional area S of the fingers 20a to 20d can be made closer to an ideal quadratic function as compared to the conventional linear cross-sectional area change. In particular, in the first finger portion 203 close to the bus bars 19a and 19b where the collected current becomes larger, the change in the cross-sectional area S of the fingers 20a to 20d can be made close to a quadratic function. Thereby, electric power loss can be reduced more. Further, in the present embodiment, the light shielding loss can be reduced by reducing the line width toward the boundary portion 202 of the fingers 20a to 20d. At this time, by setting the line width in the second finger portion 204 to be a rubbing prevention line width, the effective light-shielding loss is reduced, the fingers 20a to 20d are more easily formed, and workability is improved.
　フィンガー２０ａ～２０ｄの全体の長さに対する第２フィンガー部２０４の長さの比率について好ましい値について検討を行った。その検討結果について図６及び図７を参照して説明する。この検討にあたっては、フィンガー２０ａ～２０ｄの電気抵抗率ρを８μΩ・ｃｍとし、スクリーン印刷の積層数Ｎstackを１とし、透明導電層１１のシート抵抗ＲTCOを５０Ωとし、フィンガー２０ａ～２０ｄの全体の長さＬを２．０３６ｃｍとした。また、第２フィンガー部２０４の最小幅Ｗ１及び第１フィンガー部２０３の第２領域２０３ｂの最小幅Ｗ２を４５μｍとし、第１フィンガー部２０３の第１領域２０３ａの最小幅Ｗ３を８０μｍとし、第１領域２０３ａの最大幅Ｗ４を９０μｍとした。このような条件のもとで、フィンガー２０ａ～２０ｄの全体の長さＬに対する第２フィンガー部の長さＬ１の比率を変えて、太陽電池１の出力（％）を計算した。なお、この計算においては、第１領域２０３ａの長さＬ３を２．３６ｍｍで固定して、第２フィンガー部の長さＬ１を０～１８ｍｍの範囲で変化させた。図６は、その計算結果を示す。図６は、横軸をＬ１／Ｌとし、縦軸を太陽電池１の出力（％）とした場合の出力特性図である。この出力特性図を検討すると、Ｌ１／Ｌを５０％より大きくすると、出力が大きく低下することがわかる。一方、Ｌ１／Ｌを５０％以下とすると、全ての範囲で出力が９９．９％以上と安定していることがわかる。このことから、安定した高出力を得るためには、Ｌ１／Ｌが０．５以下、すなわち、Ｌ１がＬの５０％以下の長さであればよいことがわかる。なお、上記ρ、Ｎstack、ＲTCO、Ｌ、Ｗ１～Ｗ４を上述した値以外の値に変更し、Ｌ１／Ｌの値が０％～１００％となるようにＬ１の値を変化させた場合も同様の出力特性図が得られると推定される。 A preferable value was examined for the ratio of the length of the second finger portion 204 to the total length of the fingers 20a to 20d. The examination result will be described with reference to FIGS. In this examination, the electrical resistivity ρ of the fingers 20a to 20d is set to 8 μΩ · cm, the number N stack of screen printings is set to 1, the sheet resistance R TCO of the transparent conductive layer 11 is set to 50Ω, and the fingers 20a to 20d The length L was 2.036 cm. Further, the minimum width W1 of the second finger portion 204 and the minimum width W2 of the second region 203b of the first finger portion 203 are set to 45 μm, the minimum width W3 of the first region 203a of the first finger portion 203 is set to 80 μm, and the first The maximum width W4 of the region 203a was 90 μm. Under such conditions, the output (%) of the solar cell 1 was calculated by changing the ratio of the length L1 of the second finger portion to the total length L of the fingers 20a to 20d. In this calculation, the length L3 of the first region 203a was fixed at 2.36 mm, and the length L1 of the second finger portion was changed in the range of 0 to 18 mm. FIG. 6 shows the calculation result. FIG. 6 is an output characteristic diagram when the horizontal axis is L1 / L and the vertical axis is the output (%) of the solar cell 1. Examining this output characteristic diagram, it can be seen that when L1 / L is made larger than 50%, the output is greatly reduced. On the other hand, when L1 / L is 50% or less, the output is stable at 99.9% or more in the entire range. From this, it can be seen that L1 / L may be 0.5 or less, that is, L1 may be 50% or less of L in order to obtain a stable high output. When ρ, N stack , R TCO , L, W1 to W4 are changed to values other than those described above, and the value of L1 is changed so that the value of L1 / L becomes 0% to 100% It is estimated that a similar output characteristic diagram is obtained.
　図８は、太陽電池１の第１変形例である太陽電池１ａの受光面側の平面図である。太陽電池１と異なり、太陽電池１ａは、第１フィンガー部２０３において、曲線的に線幅が細くなっている。ここで、「曲線」とは、太陽電池１における第１領域２０３ａ、第２領域２０３ｂといった領域数を増やして、第１フィンガー部２０３の外形を曲線に近似させた状態も含む。 FIG. 8 is a plan view on the light-receiving surface side of a solar cell 1 a which is a first modification of the solar cell 1. Unlike the solar cell 1, the solar cell 1 a has a curved line width at the first finger portion 203. Here, the “curve” includes a state in which the number of regions such as the first region 203a and the second region 203b in the solar cell 1 is increased and the outer shape of the first finger portion 203 is approximated to a curve.
　太陽電池１ａにおいても、フィンガー２０ａ～２０ｄの断面積Ｓの変化率は、バスバー１９ａ，１９ｂに近づくにつれて大きくなる。このため、フィンガー２０ａ～２０ｄの断面積Ｓの変化を二次関数に近づけることができるため、太陽電池１と同様に、より電力ロスを低減することができる。また、太陽電池１と同様に、第２フィンガー部２０４で線幅を擦れ防止線幅することで実効的な遮光ロスの低減と共に、フィンガー２０ａ～２０ｄをより形成し易くし、加工性を向上させている。 Also in the solar cell 1a, the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as it approaches the bus bars 19a and 19b. For this reason, since the change in the cross-sectional area S of the fingers 20a to 20d can be approximated to a quadratic function, the power loss can be further reduced as in the solar cell 1. Similarly to the solar cell 1, the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
　図９は、太陽電池１の第２変形例である太陽電池１ｂの受光面側の平面図である。太陽電池１と異なり、太陽電池１ｂは、バスバー１９ａ，１９ｂの形状がジグザグ状である。太陽電池１ｂにおいても、フィンガー２０ａ～２０ｄの断面積Ｓの変化率は、バスバー１９ａ，１９ｂに近づくにつれて大きくなる。このため、フィンガー２０ａ～２０ｄの断面積Ｓの変化を二次関数に近づけることができるため、太陽電池１と同様に、より電力ロスを低減することができる。また、太陽電池１と同様に、第２フィンガー部２０４で線幅を擦れ防止線幅することで実効的な遮光ロスの低減と共に、フィンガー２０ａ～２０ｄをより形成し易くし、加工性を向上させている。 FIG. 9 is a plan view of the light receiving surface side of a solar cell 1 b which is a second modification of the solar cell 1. Unlike solar cell 1, solar cell 1 b has bus bars 19 a and 19 b having a zigzag shape. Also in the solar cell 1b, the rate of change of the cross-sectional area S of the fingers 20a to 20d increases as the bus bars 19a and 19b are approached. For this reason, since the change in the cross-sectional area S of the fingers 20a to 20d can be approximated to a quadratic function, the power loss can be further reduced as in the solar cell 1. Similarly to the solar cell 1, the line width is prevented from being rubbed by the second finger portion 204, thereby effectively reducing the light-shielding loss and making the fingers 20a to 20d easier to form and improving the workability. ing.
　図１０は、光電変換部２の変形例である光電変換部２ａの断面図である。光電変換部２ａは、ｐ型多結晶シリコン基板２４１と、ｐ型多結晶シリコン基板の表面側に形成されたｎ型拡散層２３１と、ｐ型多結晶シリコン基板２４１の裏面上に形成されたアルミニウム金属膜２５１とを備える。このように、光電変換部１８は、太陽光を電気に変換する機能を有すれば、他のいかなる形状であってもよい。 FIG. 10 is a cross-sectional view of a photoelectric conversion unit 2a which is a modification of the photoelectric conversion unit 2. The photoelectric conversion unit 2a includes a p-type polycrystalline silicon substrate 241, an n-type diffusion layer 231 formed on the front side of the p-type polycrystalline silicon substrate, and an aluminum formed on the back surface of the p-type polycrystalline silicon substrate 241. A metal film 251. Thus, the photoelectric conversion unit 18 may have any other shape as long as it has a function of converting sunlight into electricity.
　図１１は、光電変換部２の裏面側の集電極の変形例の平面図である。光電変換部２の裏面側においては、フィンガー２２ａ～２２ｄの代わりに、透明導電膜１７の形成領域の略全面を覆う金属膜２５１が形成されてもよい。 FIG. 11 is a plan view of a modification of the collector electrode on the back surface side of the photoelectric conversion unit 2. On the back surface side of the photoelectric conversion unit 2, a metal film 251 covering substantially the entire surface of the transparent conductive film 17 may be formed instead of the fingers 22a to 22d.
　１，１ａ，１ｂ　太陽電池、２　光電変換部、４，６　集電極、１０　太陽電池、１１，１７　透明導電膜、１２　ｐ型非晶質シリコン膜、１３　ｉ型非晶質シリコン膜、１４　ｎ型単結晶シリコン基板、１５　ｉ型非晶質シリコン膜、１６　ｎ型非晶質シリコン膜、１７　透明導電膜、１９ａ，１９ｂ　バスバー、２０　スクリーン版、２０ａ，２０ｂ，２０ｃ，２０ｄ　フィンガー、１９０ａ，１９０ｂ、２００ａ，２００ｂ，２００ｃ，２００ｄ　開口部、２０１　端部，２０２　境界部、２０３　第１フィンガー部、２０３ａ　第１領域、２０３ｂ　第２領域、２０４　第２フィンガー部、２０５　接続部、２２１，２２２　端部、２２３　第１フィンガー部、２２４　第２フィンガー部。 1, 1a, 1b solar cell, 2 photoelectric conversion part, 4, 6 collector electrode, 10 solar cell, 11, 17 transparent conductive film, 12 p-type amorphous silicon film, 13 i-type amorphous silicon film, 14 n Type single crystal silicon substrate, 15 i-type amorphous silicon film, 16 n-type amorphous silicon film, 17 transparent conductive film, 19a, 19b bus bar, 20 screen version, 20a, 20b, 20c, 20d finger, 190a, 190b , 200a, 200b, 200c, 200d opening, 201 end, 202 boundary, 203 first finger portion, 203a first region, 203b second region, 204 second finger portion, 205 connecting portion, 221, 222 end 223, first finger part, 224, second finger part.

Claims (3)

  1. 　光電変換部と、
    　前記光電変換部の主面上に設けられる集電極と、を備え、
    　前記集電極は、
    　バスバーと、
    　前記バスバーと交わるフィンガーと、を含み、
    　前記フィンガーは、
    　前記バスバー側から離れるにつれて線幅が細くなるように延設された第１フィンガー部と、
    　前記第１フィンガー部との境界部の線幅を維持したまま、前記第１フィンガー部から連続的に延設された第２フィンガー部と、
    　を有し、
    　前記第２フィンガー部は、前記第１フィンガー部の長さよりも短い、太陽電池。     A photoelectric conversion unit;
    A collector electrode provided on the main surface of the photoelectric conversion unit,
    The collector electrode is
    A bus bar,
    Including fingers that cross the bus bar,
    The fingers are
    A first finger portion extending so that the line width becomes narrower as the distance from the bus bar side increases;
    While maintaining the line width of the boundary with the first finger part, the second finger part continuously extended from the first finger part,
    Have
    The solar cell, wherein the second finger part is shorter than the length of the first finger part.
  2. 　請求項１に記載の太陽電池において、
    　前記主面は、受光面と裏面とを含み、
    　前記受光面上に設けられる前記フィンガーの前記第２フィンガー部は、前記裏面上に設けられる前記フィンガーの前記第２フィンガー部の長さよりも短い、太陽電池。     The solar cell according to claim 1,
    The main surface includes a light receiving surface and a back surface,
    The solar cell, wherein the second finger portion of the finger provided on the light receiving surface is shorter than a length of the second finger portion of the finger provided on the back surface.
  3. 　請求項１に記載の太陽電池において、
    　前記第１フィンガー部は、多段階に分かれて線幅の変化率が変わる、太陽電池。     The solar cell according to claim 1,
    The first finger part is a solar cell in which the change rate of the line width is changed in multiple stages.
PCT/JP2012/056390 2012-03-13 2012-03-13 Solar cell WO2013136436A1 (en)

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WO2015172823A1 (en) * 2014-05-14 2015-11-19 Applied Materials Italia S.R.L. Solar cell device and method for producing a solar cell device
JPWO2017119036A1 (en) * 2016-01-05 2018-10-04 パナソニックＩｐマネジメント株式会社 Solar cell module
US20210399151A1 (en) * 2018-07-24 2021-12-23 Zhejiang Aiko Solar Energy Technology Co., Ltd. Positive electrode of crystalline silicon solar cell having gate rupture prevention function

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JP3154145U (en) * 2009-02-11 2009-10-08 新日光能源科技股▼分▲有限公司 Electrode structure
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