WO2013129431A4 - Amplifier and wireless communication unit - Google Patents
Amplifier and wireless communication unit Download PDFInfo
- Publication number
- WO2013129431A4 WO2013129431A4 PCT/JP2013/055023 JP2013055023W WO2013129431A4 WO 2013129431 A4 WO2013129431 A4 WO 2013129431A4 JP 2013055023 W JP2013055023 W JP 2013055023W WO 2013129431 A4 WO2013129431 A4 WO 2013129431A4
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- field
- effect transistor
- gate
- impedance value
- predetermined impedance
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
- H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
- H03F3/423—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/54—Two or more capacitor coupled amplifier stages in cascade
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Abstract
An amplifier includes: a plurality of stages of field-effect transistors including a first field-effect transistor (101) and a second field-effect transistor(102) provided in series between a ground and an output load (123); and a first capacitor (104) provided between a drain of the first field-effect transistor (101) and a source of the second field-effect transistor (102). The source of the first field-effect transistor (101) is grounded, the drain of the field-effect transistor of final stage (103) is led to the output load (123) through a first matching circuit (107), and gates of the plurality of stages of field-effect transistors are led to a signal input node (NDI).
Claims
AMENDED CLAIMS
received by the International Bureau on 1 1 September 2013 (1 1.09.2013)
[Claim 1] (amended) An amplifier, comprising:
a set of field-effect transistors provided in series between a ground and an output load including
a first field-effect transistor with a source connected to the ground, a second field-effect transistor, and a first capacitor connected between a drain of the first field-effect transistor and a source of the second field-effect transistor; and
a first device having a predetermined impedance value connected to a gate of the second field-effect transistor.
[Claim2] The amplifier according to claim 1, wherein the first device is a capacitor.
[Claim3] The amplifier according to claim 1, wherein the predetermined impedance value is responsive to a frequency of an input signal.
[Claim4] The amplifier according to claim 3, wherein the predetermined impedance value is determined by a voltage gain of the first field-effect transistor and an impedance of a gate capacitance in the second field-effect transistor.
[Claim5] The amplifier according to claim 1, wherein the first device is a variable capacitor and the predetermined impedance value is a variable impedance value
47
that is responsive to the frequency of an input signal.
[Claim6] The amplifier according to claim 5, wherein the variable capacitor includes a switch and a plurality of capacitors.
[Claim7] The amplifier according to claim 1, further comprising:
a bias circuit separately connected to the gates of the first and second field-effect transistors via a first resistive element and a second resistive element, respectively.
[Claim8] The amplifier according to claim 1, further comprising:
a first stabilizing circuit connected between a gate of the first field-effect transistor and the gate of the second field-effect transistor.
[Claim9] (amended) The amplifier according to claim 1, further comprising:
a third field-effect transistor included in the set of field-effect transistors;
a second capacitor connected between a drain of the second field-effect transistor and a source of the third field-effect transistor; and
a second device having a second predetermined impedance value connected to a gate of the third field-effect transistor.
[Claim 10] The amplifier according to claim 9, wherein the second predetermined impedance value is greater than the predetermined impedance of the first device when the first field-effect transistor, the second field-effect transistor, and the field-effect
transistor are in the same dimension.
[Claimll] The amplifier according to claim 9, wherein the first device is connected to an input node.
[Claiml2] The amplifier according to claim 9, wherein the first device and the second device are connected to an input node.
[Claiml3] The amplifier according to claim 9, wherein the second device is connected to an input node.
[Claiml4] The amplifier according to claim 9, further comprising:
a second stabilizing circuit connected between a gate of the first field-effect transistor and the gate of the third field-effect transistor.
[Claiml5] The amplifier according to claim 9, further comprising:
a second stabilizing circuit connected between a gate of the first field-effect transistor and the gate of the third field-effect transistor.
[Claim 16] (amended) An amplifier, comprising:
a set of field-effect transistors provided in series between a ground and an output load including:
a first field-effect transistor with a source connected to the ground,
a second field-effect transistor,
a first capacitor connected between a drain of the first field-effect transistor and a source of the second field-effect transistor, a third field-effect transistor included in the set of field-effect transistors, and
a second capacitor connected between a drain of the second field-effect transistor and a source of the third field-effect transistor; a first device having a predetermined impedance value connected to a gate of the second field-effect transistor; and
a second device having a second predetermined impedance value connected to a gate of the third field-effect transistor,
wherein the predetermined impedance value is responsive to a frequency of an input signal.
[Claiml7] (amended) A wireless communication unit, comprising:
an amplifier that includes:
a first field-effect transistor with a source connected to the ground, a second field-effect transistor, and a first capacitor connected between a drain of the first field-effect transistor and a source of the second field-effect transistor; and
a first device having a predetermined impedance value connected to a gate of the second field-effect transistor.
[Claiml8] The wireless communication unit according to claim 17, wherein the predetermined impedance value is determined by a voltage gain of the first field-effect transistor and an impedance of a gate capacitance in the second field-effect transistor.
[Claiml9] (amended) The wireless communication unit according to claim 17, wherein the amplifier further comprises:
a third field-effect transistor included in the set of field-effect transistors;
a second capacitor connected between a drain of the second field-effect transistor and a source of the third field-effect transistor; and
a second device having a second predetermined impedance value connected to a gate of the third field-effect transistor.
[Claim20] The wireless communication unit according to claim 19, wherein the second predetermined impedance value is greater than the predetermined impedance of the first device when the first field-effect transistor, the second field-effect transistor, and the field-effect transistor are in the same dimension.
51
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012045200 | 2012-03-01 | ||
| JP2012-045200 | 2012-03-01 | ||
| JP2012-258403 | 2012-11-27 | ||
| JP2012258403A JP5962462B2 (en) | 2012-03-01 | 2012-11-27 | Amplifier and wireless communication device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2013129431A1 WO2013129431A1 (en) | 2013-09-06 |
| WO2013129431A4 true WO2013129431A4 (en) | 2013-11-07 |
Family
ID=47913502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2013/055023 WO2013129431A1 (en) | 2012-03-01 | 2013-02-18 | Amplifier and wireless communication unit |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5962462B2 (en) |
| WO (1) | WO2013129431A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10389307B2 (en) | 2016-11-25 | 2019-08-20 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
| US11258406B2 (en) | 2016-11-25 | 2022-02-22 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
| JP2018085689A (en) | 2016-11-25 | 2018-05-31 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020010143A (en) | 2018-07-05 | 2020-01-16 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020039053A (en) | 2018-09-04 | 2020-03-12 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020096294A (en) | 2018-12-13 | 2020-06-18 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020155974A (en) | 2019-03-20 | 2020-09-24 | 株式会社村田製作所 | Power amplifier |
| JP2020161859A (en) | 2019-03-25 | 2020-10-01 | 株式会社村田製作所 | Power amplifier circuit |
| JP2021082960A (en) | 2019-11-20 | 2021-05-27 | 株式会社村田製作所 | Power amplification circuit |
| JP2022181703A (en) * | 2021-05-26 | 2022-12-08 | ソニーセミコンダクタソリューションズ株式会社 | Amplification circuit and electronic apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6137367A (en) * | 1998-03-24 | 2000-10-24 | Amcom Communications, Inc. | High power high impedance microwave devices for power applications |
| JP2000223963A (en) * | 1999-01-29 | 2000-08-11 | Toshiba Corp | High frequency amplifier |
| TW200306062A (en) * | 2002-03-11 | 2003-11-01 | California Inst Of Techn | Multi-cascode transistors |
| JP2005159860A (en) * | 2003-11-27 | 2005-06-16 | Mitsubishi Electric Corp | Wideband amplifier |
| JP2008118320A (en) * | 2006-11-02 | 2008-05-22 | Renesas Technology Corp | Low-noise amplifying circuit |
| US8237509B2 (en) * | 2007-02-23 | 2012-08-07 | Qualcomm, Incorporated | Amplifier with integrated filter |
| JP2008236354A (en) * | 2007-03-20 | 2008-10-02 | Fujitsu Ltd | Amplifier |
| US7773959B1 (en) | 2007-04-25 | 2010-08-10 | Rf Micro Devices, Inc. | Quadrature radio frequency amplifier output network |
| US8279008B2 (en) * | 2010-08-06 | 2012-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS millimeter-wave variable-gain low-noise amplifier |
-
2012
- 2012-11-27 JP JP2012258403A patent/JP5962462B2/en active Active
-
2013
- 2013-02-18 WO PCT/JP2013/055023 patent/WO2013129431A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| JP5962462B2 (en) | 2016-08-03 |
| WO2013129431A1 (en) | 2013-09-06 |
| JP2013211830A (en) | 2013-10-10 |
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