WO2013127128A1 - 天线装置 - Google Patents
天线装置 Download PDFInfo
- Publication number
- WO2013127128A1 WO2013127128A1 PCT/CN2012/075701 CN2012075701W WO2013127128A1 WO 2013127128 A1 WO2013127128 A1 WO 2013127128A1 CN 2012075701 W CN2012075701 W CN 2012075701W WO 2013127128 A1 WO2013127128 A1 WO 2013127128A1
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- WIPO (PCT)
- Prior art keywords
- frequency band
- antenna device
- disposed
- resonant frequency
- outer conductor
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
- H01Q5/342—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
- H01Q5/357—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using a single feed point
- H01Q5/364—Creating multiple current paths
- H01Q5/371—Branching current paths
Definitions
- the present invention relates to an antenna device, and more particularly to a GPRS dual band antenna device. ⁇ Background technique ⁇
- GPRS General Packet Radio Service
- the GPRS communication working frequency range is 880 ⁇ 960MHz and 1710 ⁇ 1880MHz.
- the existing GPRS antenna basically adopts a whip antenna, so the antenna has a relatively long length when it is in use, and is not suitable for use as an antenna component of a consumer electronic product.
- the design of the antenna based on the copper-clad laminate has advantages such as a plate shape, and it is also widely used in various electronic devices.
- Foil laminate related parameters such as dielectric constant, dielectric loss and other related parameters have a great influence on the antenna radiation efficiency and even the overall antenna efficiency.
- antenna size, size, length, resonant frequency band, harmonic bandwidth, applicable equipment environment, gain efficiency, field and other factors restrict antenna development and design.
- the antenna radiation field type and the antenna require high gain performance are a prominent contradiction.
- Antenna selection has an important impact on the design and development of the antenna. Therefore, considering how to make the overall performance of the antenna meet the requirements of the corresponding electronic equipment under the limited size conditions, and save the cost of antenna development, design and manufacture, it is a comprehensive problem faced by the antenna developers, such as GPRS dual frequency. Antenna design, etc.
- the technical problem to be solved by the present invention is to improve an antenna device which is low in cost, small in size, and high in efficiency. Accordingly, the present invention provides an antenna device based on a composite dielectric substrate.
- the present invention provides an antenna device, including: a dielectric substrate including a first surface and a second surface opposite to the first surface; an antenna unit including a first harmonic And a second resonant frequency band unit and a surface of the dielectric substrate.
- the first resonant frequency band unit and the second resonant frequency band unit share a feeding portion;
- the antenna unit further includes a microstrip feed line, a first choke portion, a second choke portion, and a grounding unit;
- the tape feed line includes a feed line disposed on the first surface, a first outer conductor distributing the two sides of the feed line, and a second outer conductor disposed on the second surface; the first outer conductor is opened through the dielectric substrate
- the metallized via is electrically connected to the second outer conductor; the feed portion is connected to one end of the feed line; the first choke portion and the second choke portion are disposed on two sides of the second outer conductor; the second outer conductor One end is electrically connected to one end of the first choke portion and one end of the second choke portion.
- the feed line and the first outer conductor are disposed in the first surface projection area of the second outer conductor.
- the first choke portion is a gamma stream line of a frequency band of 880 MHz to 960 MHz
- the second choke portion is a choke line of a frequency band of 1710 MHz to 1880 MHz.
- the grounding unit includes a first grounding portion disposed on the first surface and a second grounding portion disposed on the second surface, and the other end of the second outer conductor extends to the second grounding portion, the first grounding The first ground portion is electrically connected to the second ground portion through a plurality of metallized via holes formed in the dielectric substrate.
- the first choke portion and the second choke portion are symmetrically and parallelly disposed on both sides of the second outer conductor.
- the first resonant frequency band unit and the second resonant frequency band unit are disposed on the same surface and are integrated.
- the other end of the microstrip feed line extends into a conductive connection portion.
- the conductive connection portion has a circular shape and a through hole is formed in the center.
- the conductive connection portion is oppositely insulated from the first ground portion.
- the first resonant frequency band unit and the second resonant frequency band unit share a feeding portion;
- the antenna unit further includes a microstrip feed line, a choke portion and a grounding unit;
- the microstrip feed line is disposed on the first surface a feed line, a first outer conductor on both sides of the feed line, and a second outer conductor disposed on the second surface;
- the first outer conductor passes through the plurality of metallized vias and the second outer conductor formed on the dielectric substrate
- the electrical connection is connected to one end of the feeding line;
- the choke portion is symmetrically disposed on two sides of the second outer conductor; and one end of the second outer conductor is electrically connected to one end of the choke portion.
- the feed line and the first outer conductor are disposed in the first surface projection area of the second outer conductor.
- the choke portion is a ⁇ stream line of a frequency band of 880 MHz to 960 MHz or a choke line of a band of 1710 MHz ⁇ 1880 MHz.
- the grounding unit includes a first grounding portion disposed on the first surface and a second grounding portion disposed on the second surface, and the other end of the second outer conductor extends to the second grounding portion, the first A grounding portion is disposed in the projection area of the second grounding portion in the first surface; the first grounding portion is electrically connected to the second grounding portion through a plurality of metallized via holes formed in the dielectric substrate.
- the first resonant frequency band unit and the second resonant frequency band unit are disposed on the same surface and are integrated.
- the other end of the microstrip feed line extends into a conductive connection portion.
- the conductive connection portion has a circular shape and a through hole is formed in the center.
- the conductive connection portion is oppositely insulated from the first ground portion.
- the first resonant frequency band unit and the second resonant frequency band unit are coupled to each other and share a feeding portion; a through hole is formed in the dielectric substrate corresponding to the feeding portion; a grounding unit is disposed in the through hole On the edge of the dielectric substrate.
- the first resonant frequency band unit and the second resonant frequency band unit are disposed on the same surface and are integrated.
- the first resonant frequency band unit is disposed on the first surface; the second resonant frequency band unit is disposed on the second surface, and a metallized via is disposed on the dielectric substrate corresponding to the feeding portion, A resonant frequency band unit is electrically connected to the second resonant frequency band unit through the metallization via.
- first conductive branch, the second conductive branch, the short arm, the loading element and the resonant arm constitute a first resonant unit;
- first conductive branch, the second conductive branch and the short arm constitute a second resonant unit.
- the loading component is an inductor.
- the feeding portion, the first conductive branch, the second conductive branch and the short arm surround each other to form a rectangular pattern with a notch.
- the above-mentioned dual-frequency antenna resonance is used in 88 ( ⁇ 960 ⁇ frequency band and 171 (Tl880MHz frequency band, and the dielectric of the dielectric substrate is reduced by introducing a form of polar and non-polar polymer copolymer).
- the number and dielectric loss make the antenna device less loss, and the energy conversion rate is improved.
- the overall performance of the antenna device is further improved by antenna selection and optimized antenna selection design.
- Figure 1 is a perspective perspective view of a first embodiment of an antenna device of the present invention
- Figure 2 is a schematic view of the first surface of the antenna device shown in Figure 1;
- FIG. 3 is a schematic diagram of a through hole on a dielectric substrate of a first embodiment of an antenna device according to the present invention
- FIG. 4 is a schematic view of a second surface on a dielectric substrate according to a first embodiment of the antenna device of the present invention
- FIG. 5 is a schematic view showing a metallized via hole on a dielectric substrate according to a first embodiment of the antenna device of the present invention
- FIG. 6 is a simulation parameter diagram of the antenna device S11 shown in FIG. 1;
- Figure 7 is a Smith chart of the antenna device shown in Figure 1 at 88 ( ⁇ 960 ⁇ band and 171 ( ⁇ 880 ⁇ band;
- Figure 8 is a simulation field diagram of the antenna device shown in Figure 1 operating in the 900 MHz band;
- Figure 9 is a plan view of the E plane of the field pattern shown in Figure 8.
- Figure 10 is a simulation field diagram of the antenna device shown in Figure 1 operating in the 1800 MHz band;
- Figure 11 is a plan view of the E plane of the field pattern shown in Figure 10;
- Figure 12 is a perspective perspective view of a second embodiment of the antenna device of the present invention.
- Figure 13 is a schematic view showing the first surface of the antenna device shown in Figure 12;
- Figure 14 is a schematic view showing a through hole of the dielectric substrate of the antenna device shown in Figure 12;
- Figure 15 is a schematic rear view of the dielectric substrate of the antenna device shown in Figure 12;
- FIG. 16 is a schematic diagram of a via hole of a dielectric substrate of the antenna device shown in FIG. 12;
- 17 is a simulation parameter diagram of the antenna device S11 shown in FIG. 12;
- FIG. 19 is a parameter table corresponding to each frequency point on the Smith chart shown in FIG. 18;
- 20 is a schematic diagram of the simulated field type E plane of the antenna device shown in FIG. 12 operating in the 920 MHz band;
- FIG. 21 is a schematic diagram of the simulated field type E plane of the antenna device shown in FIG. 12 operating in the 1800 MHz band;
- Figure 23 is a second schematic view showing the second embodiment of the antenna device of the present invention.
- Figure 24 is a perspective perspective view of the antenna device shown in Figures 22 and 23;
- Figure 25 is a simulation parameter diagram of the antenna device S11 shown in Figures 22 and 23;
- Figure 26 is a simulation diagram of the antenna device shown in Figures 22 and 23 operating in the 920 MHz band
- Figure 27 is a simulation pattern of the antenna device shown in Figures 22 and 23 operating in the 1800 MHz band
- Figure 28 is Figure 22 and Figure 23 Smith chart of the antenna device shown;
- Figure 29 is a perspective perspective view of an embodiment of an antenna device according to the present invention.
- Figure 30 is a simulation parameter diagram of the antenna device S 11 shown in Figure 29;
- Figure 31 is a Smith chart of the antenna device shown in Figure 29.
- FIG. 1 is a perspective perspective view of a first embodiment of an antenna device according to the present invention.
- the antenna device includes a dielectric substrate 1 and an antenna unit 13 disposed on both surfaces of the dielectric substrate 1.
- the dielectric substrate 1 includes a first surface 12 (refer to FIG. 2) and opposite the first surface 12.
- the antenna unit 13 includes a first resonant frequency band unit 133 and a second resonant frequency band unit 135, wherein the first resonant frequency band unit 133 is connected by a point EFGHJ, and the second resonant frequency band unit 135 is connected by a point EI;
- the first resonant frequency band unit 133 and the second resonant frequency band unit 135 are coupled to each other and share a feeding portion E.
- the first resonant frequency band unit 133 and a second resonant frequency band unit 135 are both disposed on the second surface 11 of the dielectric substrate 1.
- the first resonant frequency band unit 133 and the second resonant frequency band unit 135 are respectively disposed on the first surface 12 and the second surface 11 of the dielectric substrate 1.
- FIG. 2 is a first surface of the antenna device shown in FIG. 1.
- Schematic diagram. 3 is a schematic view of a through hole on a dielectric substrate of a first embodiment of the antenna device of the present invention.
- 4 is a schematic view showing a second surface on a dielectric substrate of the first embodiment of the antenna device of the present invention.
- FIG. 5 is a schematic view showing a metallized via hole on a dielectric substrate according to a first embodiment of the antenna device of the present invention.
- the antenna unit 13 further includes a microstrip feed line 134, a first choke portion 137, a second choke portion 136, and a grounding unit 141/142.
- the first choke portion 137 is connected by a point AB.
- the second choke portion 136 is formed by connecting dots CD.
- the first choke portion 137 is a gamma stream line of 880 MHz to 960 MHz
- the second choke portion 136 is a choke line of a frequency band of 1710 MHz to 1880 MHz.
- the grounding unit 141 ⁇ 142 includes a first grounding portion 141 disposed on the first surface 12 and a second grounding portion 142 disposed on the second surface 11.
- the first grounding portion 141 is disposed on the second grounding portion 142.
- the first ground portion 141 is electrically connected to the second ground portion 142 through the metallized via 138 in a projected area within the surface 12.
- the microstrip feed line 134 includes a feed line 1341 disposed on the first surface 12, a first outer conductor 1342 distributing the two sides of the feed line 1341, and a second outer conductor 1343 disposed on the second surface 11.
- the feed line 1341 and the first outer conductor 1342 are disposed in the second outer conductor 1343 in the projected area of the first surface 12.
- the other end (M end) of the second outer conductor 1343 extends into the second ground portion 142.
- the feed line 1341 is electrically connected to the feed portion E and the other end (M end) is extended to a conductive connection portion 15.
- the conductive connecting portion 15 has a circular shape and a through hole 151 is formed in the center.
- the conductive connecting portion 15 is oppositely insulated from the first ground portion 141.
- the first choke portion 137 and the second choke portion 136 are symmetrically disposed on both sides of the second outer conductor 1343 and parallel to each other.
- One end (N end) of the second outer conductor 1343 is electrically connected to one end (B end) of the first choke portion 137 and one end (D end) of the second choke portion 136.
- a plurality of through holes 18 of arbitrary shapes are provided on the dielectric substrate 1 of the antenna device.
- the through hole 18 has a rectangular shape.
- a plurality of metallization vias 138 are defined in the dielectric substrate 1 corresponding to the first outer conductor 1342.
- the metallization vias 138 are used to electrically connect the first outer conductor 1342 at the first surface 12 and the second outer conductor 1343 of the second surface 11.
- the metallization via 138 is also used to connect the first ground portion 141 of the first surface 12 and the second ground of the second surface 11 Portion 142 is electrically connected.
- the antenna device further includes a microwave high frequency connector 17, and the conductive connecting portion 15 is electrically connected to an inner conductor (not shown) of the microwave high frequency connector 17.
- the second ground portion 142 is electrically connected to the outer conductor of the microwave high frequency connector 17.
- the microwave high frequency connector 17 is also referred to as an SMA signal connector (see Fig. 1).
- the resonant frequency band of the first resonant frequency band unit 133 is 880 MHz to 960 MHz; and the resonant frequency band of the second resonant frequency band unit 135 is 1710 MHz to 1880 MHz.
- the inner conductor of the microwave high frequency connector 17 is electrically connected to the conductive connecting portion 15 through the through hole 151.
- the first resonant frequency band unit 133 and the second resonant frequency band unit 135 are respectively disposed on a first surface 12 and a second surface 11 and on the dielectric substrate 1 corresponding to the feeding portion E.
- a plurality of metallized vias (not shown) are disposed, and the first resonant frequency band unit 133 is electrically connected to the second resonant frequency band unit 135 through the metallization vias, so that the coaxial signal lines (not shown) are electrically connected. It can be simultaneously conducted to the first resonant frequency band unit 133 and the second resonant frequency band unit 135.
- first resonant frequency band unit 133 and the second resonant frequency band unit 135 are etched into two separate electrical conductors and connected by an associated conductor.
- the simulation parameter diagram of the antenna device S 11 has good gain performance in the 880-960 display z-band and the 171CT1880 display z-band.
- the antenna device is in the 88CT960 display z-band and the 171CT1880 z-band Schmidt chart.
- the antenna device is an omnidirectional antenna around the 1800MHz band with a gain of 3.38dB.
- the antenna device of the second embodiment of the present invention includes a dielectric substrate 2 and an antenna unit 23 disposed on both surfaces of the dielectric substrate 2 .
- the dielectric substrate 2 includes a first surface 22 . (Refer to FIG. 13) and a second surface 21 opposite the first surface 22.
- the antenna unit 23 includes a first resonant frequency band unit 233 and a second resonant frequency band unit 235, wherein the first resonant frequency band unit 233 is composed of a point EFGHJ, and the second resonant frequency band unit 235 is composed of a point EC;
- the resonant frequency band unit 233 and the second resonant frequency band unit 235 are coupled to each other and share a feeding portion E.
- the first resonant frequency band unit 233 and the second resonant frequency band unit 235 are both disposed on the first surface 22 of the dielectric substrate 2. In other embodiments, the first resonant frequency band unit 233 and the second resonant frequency band unit 235 are respectively disposed on the first surface 22 and the second surface 21 of the dielectric substrate 2.
- the antenna unit 23 further includes a microstrip feed line 234, a choke portion 237, and a grounding unit 241/242, wherein the choke portion 237 is formed by a point AB connection.
- the microstrip feed line 234 includes a feed line 2341 disposed on the first surface 22 and connected to the feed portion E, a first outer conductor 2342 distributing the two sides of the feed line 2341, and a second outer surface 21 disposed on the second surface 21 Second outer conductor 2343.
- the feed line 2341 and the first outer conductor 2342 are disposed on the first surface of the second outer conductor 2343 22 within the projection area.
- the other end (N end) of the second outer conductor 2342 extends into the second ground portion 242.
- the choke portion 237 is a 1710 MHz to 1880 MHz band choke line. In other embodiments, the choke portion 237 is a gamma stream line in the 880 MHz to 960 MHz band.
- the grounding unit 241 / 242 includes a first ground portion 241 disposed on the first surface 22 and a second ground portion 242 disposed on the second surface 21 .
- the first ground portion 241 is disposed on the second ground portion 242 at the second portion a plurality of metallized vias 238 formed in the dielectric substrate 2 in the projection area in a projection area in a surface 22, the first grounding portion 241 passing through the plurality of metallization vias 238 and the second grounding portion 242 Electrical connection.
- the microstrip feed line 234 is electrically connected to the feed portion E and the other end (N end) is extended to a conductive connection portion 25.
- the conductive connecting portion 25 has a circular shape and a through hole 251 is formed in the center.
- the conductive connecting portion 25 is oppositely insulated from the first ground portion 241.
- the choke portion 237 is symmetrically and parallel to both sides of the second outer conductor 2343. One end (M end) of the second outer conductor 2343 is electrically connected to one end (B end) of the choke portion 237.
- a plurality of through holes 238 of arbitrary shapes are provided on the dielectric substrate 2 of the antenna device.
- the through hole 238 is rectangular to reduce the width of the antenna device of the present invention.
- a plurality of metallized vias 238 are formed in the dielectric substrate 2 corresponding to the first outer conductor 2342. The metallization vias 238 are used to electrically connect the first outer conductor 2342 at the first surface 22 and the second outer conductor 2343 of the second surface 21.
- the antenna device further includes a microwave high frequency connector 27 through which the conductive connection portion 25 is electrically connected to the inner conductor (not shown) of the microwave high frequency connector 27. connection.
- the second ground portion 242 is electrically connected to the outer conductor of the microwave high frequency connector 27.
- the microwave high frequency connector 27 uses a microwave high frequency connector, also known as an SMA signal connector 27 (see Fig. 12).
- the resonant frequency band of the first resonant frequency band unit 233 is 880 MHz to 960 MHz ; and the resonant frequency band of the second resonant frequency band unit 235 is 1710 MHz to 1880 MHz.
- the inner conductor of the microwave high frequency connector 27 is in electrical contact with the conductive connection portion 25 through the through hole 251.
- the first resonant frequency band unit 233 and the second resonant frequency band unit 235 are respectively disposed on a first surface 22 and a second surface 21, and on the dielectric substrate 2 corresponding to the feeding portion E. a plurality of metallized vias (not shown) are disposed, and the first resonant frequency band unit 233 is electrically connected to the second resonant frequency band unit 235 through the metallized via holes, so that the coaxial signal lines (not shown) The electrical signal can be simultaneously conducted to the first resonant frequency band unit 233 and the second resonant frequency band unit 235.
- first resonant frequency band unit 233 and the second resonant frequency band unit 235 are etched into two separate electrical conductors and connected by an associated conductor.
- the antenna device has good gain performance in the 880-960 display z-band and the 171CT1880 display z-band.
- SI 1 corresponding to 880MHz (ml), 920 MHz (m2), 960 MHz (m3), 1710MHz (m4), 1800MHz (m5), 1880MHz (m6), 1733MHz (m7) and 1854MHz (m8)
- Parameter gain value corresponding to 880MHz (ml), 920 MHz (m2), 960 MHz (m3), 1710MHz (m4), 1800MHz (m5), 1880MHz (m6), 1733MHz (m7) and 1854MHz (m8) Parameter gain value:
- the antenna device is in the 880 ⁇ 960 ⁇ band and 171 (Tl880MHz band Schmidt chart. It is shown at 1810MHz (ml), 1727.5 MHz (m2), 1865MHz (m3), 875MHz (m4), Standing wave values corresponding to 902.5MHz (m5) and 957.5MHz (m6).
- FIG. 20 shows the pattern of the simulated field type E plane of the antenna device operating in the 920 MHz band. As can be seen from the field pattern, the antenna device is an omnidirectional antenna around the 900MHz band and the gain is up to
- the antenna device is an omnidirectional antenna around the 1800MHz band and the gain is up to
- the antenna device includes a dielectric substrate 3 and an antenna unit 33.
- the dielectric substrate 3 includes a first surface 31 and a second surface 32 opposite to the first surface 31.
- the antenna unit 33 includes a first resonant frequency band unit.
- the antenna device further includes a grounding unit 35 disposed around the edge of the dielectric substrate 3 of the through hole 34.
- Fig. 24 is a perspective perspective view of the antenna device shown.
- the antenna device further includes a copper shaft signal line 36 through which the power feeding portion E is electrically connected to an inner conductor (not shown) of the copper shaft signal line 36.
- the grounding unit 35 is electrically connected to the outer conductor of the copper shaft signal line 36.
- the copper shaft signal line 36 uses a microwave high frequency connector, also known as an SMA signal connector.
- the planar view of the first resonant frequency band unit 333 has a shape of a substantially "G” shape, and the resonant frequency band is 88 ( ⁇ 960 ⁇ ; the planar view of the second resonant frequency band unit 335 has a substantially inverted “L” shape. , and the resonant frequency band is 171 ( ⁇ 88 ( ⁇ .
- the first resonant frequency band unit 333 and the second resonant frequency band unit 335 are respectively disposed on a first surface 31 and a second surface 32, and on the corresponding dielectric substrate 3 of the feeding portion ⁇ A metal via is disposed (not shown), and the first resonant frequency band unit 333 is electrically connected to the second resonant frequency band unit 335 through the metallized via, so that the electrical signal of the coaxial signal line 36 can be simultaneously transmitted. Up to the first resonant frequency band unit 333 and the second resonant frequency band unit 335.
- the first resonant frequency band unit 333 and the second resonant frequency band unit 335 are etched into two separate electrical conductors and connected by an associated conductor, the associated conductor being fed unit.
- FIG. 25 is a simulation parameter diagram of the antenna device S11.
- the antenna device has high gain values in the 880 to 960 display z-band and 171 ( ⁇ 880 ⁇ band.
- the following table shows the S11 parameter values corresponding to 920 MHz and 1800 MHz, respectively:
- the gain of the antenna device at 920 is 1.56dbi, and the gain of the antenna device at 1800 is 2. 2dbi.
- Figure 28 is a Smith chart of the antenna device shown in Figure 1.
- the VSWR parameters of the antenna device are as follows:
- the VSWR of the antenna device at 920 MHz is as low as 1. 8.
- the standing wave ratio at 1810 MHz is as low as 1. 1. It can be seen that the GPRS dual-frequency antenna has a very high frequency at 920 MHz and 1810 MHz. Good standing wave ratio, fully meet the needs of the corresponding electronic equipment.
- the antenna device of the present invention includes a dielectric substrate 4 and a monopole antenna conductor 43 disposed on the surface of the dielectric substrate 4.
- the dielectric substrate 4 includes a first surface 41 (refer to FIG. 13) and a second surface opposite the first surface 41.
- the antenna device of the invention is used in a GPRS communication system, and Used in related systems such as remote charging, people, objects and other positioning devices. The antenna device of the present invention will be described in two parts below.
- Antenna device selection design :
- the monopole antenna conductor 43 includes a power feeding portion A, a first conductive branch AC and a short arm F extending from the power feeding portion A, and a second conductive branch at a middle position of the first conductive branch AC.
- a resonant arm DE is disposed in the first conductive branch AC and a loading element 42 for connecting the first conductive branch AC and the resonant arm DE.
- the loading element 42 is an inductor.
- the first conductive branch AC is disposed on the same line as the resonant arm DE.
- the second conductive branch BH is bent into the inverted "L" shape toward the first conductive branch AC.
- the feeding portion A, the first conductive branch AC, the second conductive branch BH, and the short arm F surround each other to form a rectangular pattern with a notch 46.
- a through hole 44 is defined in the power feeding portion A and the corresponding position for fixing a high frequency connector (SMA connecting male connector).
- the monopole antenna conductor 43 is used to resonate between 880 MHz to 960 MHz and 1710 MHz to 1880 MHz.
- the first conductive branch AC, the second conductive branch BH, the short arm F, the loading component 42 and the resonant arm DE constitute a first resonant unit 433 for determining each parameter value of the 880 MHz to 960 MHz resonant frequency band;
- the second conductive branch BH and the short arm F constitute a second resonating unit 435 for determining various parameter values of the 1710 MHz to 1880 MHz resonant frequency band.
- the simulation test results of the antenna device of the present invention are as follows:
- the antenna device S11 is shown as a simulation parameter map.
- the antenna device has good gain performance at 88 ( ⁇ 960 ⁇ frequency band and 171 (Tl880MHz frequency band.
- FIG. 31 shows the antenna device in the 880-960 display z-band and 1710 ⁇ 1880 z-band Schmitt chart.
- the antenna device is in the 88 ( ⁇ 960 ⁇ band and 171 ( ⁇ 880 ⁇ band corresponding to the standing wave value is:
- the dielectric constant and the dielectric loss of the dielectric base substrate are reduced by introducing a form of a polar and a non-polar polymer copolymer, so that the antenna device has less loss and an energy conversion rate is improved;
- the antenna selection and optimized antenna selection design further improve the overall performance of the antenna device.
- the antenna dielectric substrate is required to operate at a frequency of 1 GHz, having a nominal dielectric constant of 4.0 and a value of 008. Electrical loss tangent.
- the dielectric substrate includes a fiberglass cloth, an epoxy resin, and a compound containing a crosslinking reaction with the epoxy resin.
- the first type of embodiment of the dielectric substrate is as follows: The manufacturing process of the dielectric substrate is as follows: First, providing a immersion solution comprises: a first component comprising an epoxy resin; and a second component comprising the epoxy resin a compound in which a crosslinking reaction occurs; and one Kind or multiple solvents. The first component and the second component are mixed according to a certain proportion.
- the infiltrating solution is stirred, the glass fiber cloth is infiltrated into the infiltrating solution to adsorb the first component and the second component in the fiberglass cloth or on the surface; and then the fiberglass cloth is baked
- the one or more solvents are volatilized, and the first component and the second component are mutually crosslinked to form a prepreg or a cured tablet.
- the prepreg refers to the adsorption of the first component and the second component of the fiberglass cloth in a relatively low drying temperature environment, the first component comprising the epoxy resin and the second component comprising the compound portion undergoing a compound crosslinking reaction.
- Soft mixture The cured product means that the first component and the second component of the fiberglass cloth are adsorbed in a relatively high drying temperature environment, and the first component comprises an epoxy resin and the second component comprises a compound moiety. a relatively hard mixture.
- the infiltrated fiberglass cloth is formed into a semi-cured material (in the form of a sheet) by low-temperature baking, and then the semi-cured material is cut into a cut piece, and the plurality of pieces are cut according to the thickness.
- the multilayer dielectric substrate i.e., multilayer laminate or sheet described in the heat treatment is combined.
- the compound of the second component may optionally comprise a copolymer of a polar polymer and a non-polar polymer, such as a styrene maleic anhydride copolymer.
- a copolymer which can be subjected to a compound crosslinking reaction with an epoxy resin can be used for the formulation component of the present embodiment.
- the styrene maleic anhydride copolymer of the present embodiment has the following molecular formula:
- the above styrene maleic anhydride copolymer contains 4 styrenes in the formula. In other embodiments, the corresponding molecular weight may be selected, such as styrene maleic anhydride copolymer containing 6, 8 styrene or any number in the formula.
- An epoxy resin is generally an organic polymer compound containing two or more epoxy groups in a molecule.
- the second component of the compound may also be a cyanate prepolymer or a mixture of a styrene maleic anhydride copolymer and a cyanate prepolymer in any ratio.
- the epoxy resin and the styrene maleic anhydride copolymer are formulated in a ratio of functional values, and then a certain amount of solvent is added to form a solution.
- the mixing process of the epoxy resin and the styrene maleic anhydride copolymer is processed by a conventional apparatus, such as a common mixing tank and a reaction kettle to uniformly mix the epoxy resin and the styrene maleic anhydride copolymer, thereby making the solution
- a conventional apparatus such as a common mixing tank and a reaction kettle to uniformly mix the epoxy resin and the styrene maleic anhydride copolymer, thereby making the solution
- the epoxy resin is uniformly mixed with the styrene maleic anhydride copolymer.
- the infiltrating solution is gelled by adding a certain accelerator for 200-400 seconds (the gelatinization temperature is 17 ⁇ , wherein the gelation time of the infiltrating solution is promoted for about 260 seconds (eg, 258-260 seconds). , or 250-270 seconds, etc.)
- the accelerator may include any one of the tertiary amines, the imidazoles and the boron trifluoride monoethylamine or a mixture thereof.
- the one or more solvents may be selected from, but not limited to, acetone, butanone, N, N-dimethylformamide, ethylene glycol methyl ether, toluene or a mixture of two or more solvents. Mixed solvent.
- the wetting solution comprises: a first component comprising an epoxy resin; a second component comprising a compound that crosslinks with the epoxy resin; and one or more solvents.
- the second component compound is a mixture of a styrene maleic anhydride copolymer and a cyanate ester prepolymer in any ratio. Wherein the cyanate ester prepolymer has a concentration of 75%.
- the promoter is selected from dimethylimidazole; the solvent is selected from butanone.
- a styrene maleic anhydride copolymer and a cyanate ester prepolymer are simultaneously added, and both of them can be combined with an epoxy resin to form a crosslinking reaction.
- the second type of implementation is as follows:
- the low dielectric constant low loss dielectric substrate manufacturing process further includes the following process: First, the second component comprises a reaction of crosslinking with the epoxy resin.
- the epoxy resin is formulated in a ratio of functional values to the epoxy resin, and then a certain amount of solvent is added to prepare a solution.
- the compound comprises a copolymer of a polar polymer and a non-polar polymer, and the copolymer of the preferred embodiment may be a styrene maleic anhydride copolymer.
- the mixing process of the epoxy resin and the styrene maleic anhydride copolymer is processed by conventional equipment, such as a common mixing tank and a reaction kettle to uniformly mix the epoxy resin with the styrene maleic anhydride copolymer.
- the styrene maleic anhydride copolymer of the present embodiment has the following molecular formula:
- the corresponding molecular weight may be selected, such as styrene maleic anhydride copolymer containing 6, or 8 styrene in the formula.
- Epoxy resin is generally referred to as an organic polymer having two or more epoxy groups in a molecule.
- the second component of the compound may also be a cyanate prepolymer or an optional one. A mixture of a styrene maleic anhydride copolymer and a cyanate ester prepolymer in any ratio.
- the epoxy resin in the solution and the styrene maleic anhydride copolymer can be subjected to a compound crosslinking reaction under certain conditions, and the compounding crosslinking reaction occurs after being attached to the fiberglass cloth, thereby The dielectric substrate of the present invention is formed.
- the one or more solvents may be selected from, but not limited to, acetone, butanone, hydrazine, hydrazine-dimethylformamide, ethylene glycol methyl ether, toluene or a mixed solvent of the above.
- Epoxy resin copolymer cyanate ester prepolymer dimethylimidazole butanone 3 liquefaction content solid content 100.0% 100.0% 75.0% 100.0% 0.0% 0.0 equivalent 233 490 139 0.0 0.0 0.0 0.0
- the above solution formulation includes an epoxy resin, a styrene maleic anhydride copolymer, a cyanate ester prepolymer, a promoter dimethylimidazole, and a solvent butanone.
- a styrene maleic anhydride copolymer and a cyanate prepolymer are simultaneously added to the above formulation, and both of them are capable of being crosslinked with an epoxy resin.
- the solution may be gelled in 200-400 seconds by the addition of one or more promoters, wherein the particular temperature environment may be a single temperature value or a selected specific temperature range, in this embodiment
- the gelation time is set by setting the environment at 171 degrees Celsius, so that the above solution is better in the gelation time of about 260 seconds (such as 258-260 seconds, or 250-270 seconds, etc.).
- the promoter may optionally include, but is not limited to, any one of a tertiary amine, an imidazole, and a boron trifluoride monoethylamine or a mixture thereof.
- the fiberglass cloth is infiltrated in the solution, taken out and dried to form a composition.
- the glass cloth is immersed in the solution and fully wetted to ensure that the epoxy resin and the styrene maleic anhydride copolymer are adsorbed in the fiberglass cloth or on the surface, and then the glass cloth immersed in the solution is suspended by the blast.
- the drying oven is baked at 180 ° C for about 5 minutes, the purpose is to fully volatilize the solvent butanone, and the epoxy resin and the styrene maleic anhydride copolymer are combined and cross-linked, and the glass cloth is cross-linked with the compound.
- the dried composition is pressed together with a conductive foil.
- the dried composition precured or prepreg
- the conductive foil is made of a conductive material made of copper, silver, gold, aluminum or an alloy material of the above materials. Since the price of copper material is relatively low, the conductive foil made of copper is suitable for industrialization.
- the copper-clad dielectric substrate is etched by the etching process to the antenna device corresponding to the invention.
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Abstract
本发明公开了一种天线装置,所述装置包括一介质基板,包括一第一表面和与所述第一表面相对两的一第二表面;一天线单元,包括一第一谐振频段单元和一第二谐振频段单元且设置所述介质基板的表面上。相对现有技术,利用上述双频天线谐振在880~960MHz频段和1710~1880MHz频段,并通过引入极性与非极性高分子共聚物的形式来降低介质基板的介电常数以及介电损耗,从而使得天线装置损耗较少,能量转换率提高,同时通过天线选型、优化天线选型设计进一步提高了天线装置的增益等综合性能。
Description
天线装置
【技术领域】
本发明涉及天线装置, 更具体地说, 涉及一种 GPRS双频的天线装置。 【背景技术】
通用分组无线业务 (General Packet Radio Service, 简称 GPRS) 是一种 分组资料承载业务。 由于 GPRS通讯不受作业距离限制, 特别适合城区、 山区等 电信号阻挡严重的复杂地区作业而被大量应用。 GPRS 通讯工作频率段为 880~960MHz 和 1710~1880MHz两个频段。
现有 GPRS天线基本采用拉杆天线, 因此天线在使用状态时, 其长度相对 比较长, 不适合用作消费性电子产品的天线组件。 另一方面, 在射频天线技术 领域, 基于覆铜箔层压板设计天线由于呈板状等优点, 也使得其大量使用于各 种各样的电子设备中, 经研究测试发现: 现有的覆铜箔层压板相关参数如介电 常数约、介电损耗值等相关参数,对天线辐射效率乃至整个天线效率影响很大。
同时, 对于天线设计业者来说, 天线的尺寸、 大小、 长短、 谐振频段、 谐 振频宽、 适用设备环境、 增益效益、 场性等各个因素制约天线开发和设计。 比 如天线辐射场型与天线要求高增益性能是一对突出的矛盾。 而天线选型对天线 的设计、 开发有着重要影响。 因此考虑在较小天线在有限尺寸条件下如何使得 天线的整体性能符合相对应电子设备需求、 又能节省天线开发、 设计及制造的 成本, 是天线开发者面临的综合性问题, 如 GPRS双频天线设计等。
【发明内容】
本发明要解决的技术问题在于, 在提高一种成本低、 小型化及效率高的天 线装置。 因此, 本发明提供一种基于复合材料介质基板的天线装置。
为解决上述问题, 本发明提供一种天线装置, 包括: 一介质基板, 包括一 第一表面和与所述第一表面相对两的一第二表面; 一天线单元, 包括一第一谐
振频段单元和一第二谐振频段单元且设置所述介质基板的表面上。
其中, 所述第一谐振频段单元和第二谐振频段单元共用一馈电部; 所述天 线单元还包括一微带馈线、 一第一扼流部、 一第二扼流部及接地单元; 微带馈 线包括设置于第一表面上的一馈线、 分布所述馈线两侧的第一外导体及设置于 第二表面上的第二外导体; 第一外导体通过所述介质基板上开设的若干金属化 过孔与第二外导体电连接; 馈电部与所述馈线一端相连; 所述第一扼流部和第 二扼流部设置于第二外导体两侧; 所述第二外导体的一端与所述第一扼流部的 一端和第二扼流部的一端电连为一体。
其中, 所述馈线和第一外导体设置于第二外导体在第一表面投影区域内。 其中, 所述第一扼流部为 880MHz〜960MHz 频段扼流线, 第二扼流部为 1710MHz〜1880MHz频段扼流线。
其中, 所述接地单元包括设置第一表面上的第一接地部和设置第二表面上 的第二接地部, 所述第二外导体的另一端延伸成所述第二接地部, 第一接地部 设置于所述第二接地部在第一表面内投影区域内; 所述第一接地部通过所述介 质基板上开设的若干金属化过孔与第二接地部电连接。
其中, 所述第一扼流部和第二扼流部对称地且平行设置于第二外导体两侧。 其中, 所述第一谐振频段单元和第二谐振频段单元设置于同一表面上且连 为一体。
其中, 所述微带馈线另一端延伸成一导电连接部, 所述导电连接部呈圆状 且在中心开设一通孔, 所述导电连接部与第一接地部相对绝缘设置。
其中, 所述第一谐振频段单元和第二谐振频段单元共用一馈电部; 所述天 线单元还包括一微带馈线、 一扼流部及接地单元; 微带馈线包括设置于第一表 面上的一馈线、 分布所述馈线两侧的第一外导体及设置于第二表面上的第二外 导体; 第一外导体通过所述介质基板上开设的若干金属化过孔与第二外导体电 连接;馈电部与所述馈线一端相连;所述扼流部对称地设置于第二外导体两侧; 所述第二外导体的一端与所述扼流部的一端电连为一体。
其中, 所述馈线和第一外导体设置于第二外导体在第一表面投影区域内。 其中, 所述扼流部为 880MHz〜960MHz频段扼流线或 1710 MHz ^ 1880MHz频 段扼流线。
其中, 所述接地单元包括设置第一表面上的第一接地部和设置第二表面上 的第二接地部, 所述第二外导体的另一端延伸成所述第二接地部, 所述第一接 地部设置于第二接地部在第一表面内投影区域内; 所述第一接地部通过所述介 质基板上开设的若干金属化过孔与第二接地部电连接。
其中, 所述第一谐振频段单元和第二谐振频段单元设置于同一表面上且连 为一体。
其中, 所述微带馈线另一端延伸成一导电连接部, 所述导电连接部呈圆状 且在中心开设一通孔, 所述导电连接部与第一接地部相对绝缘设置。
其中, 所述第一谐振频段单元和第二谐振频段单元相互耦合关联且共用一 馈电部; 所述馈电部对应的介质基板上开设一通孔; 一接地单元, 设置于所述 通孔的介质基板边缘上。
其中, 所述第一谐振频段单元和第二谐振频段单元设置于同一表面上且连 为一体。
其中, 所述第一谐振频段单元设置于第一表面上; 第二谐振频段单元设置 于第二表面上, 且在所述馈电部对应的介质基板上设置一金属化过孔, 所述第 一谐振频段单元通过所述金属化过孔与第二谐振频段单元电连接。
其中, 其中所述第一导电分支、 第二导电分支、 短臂、 加载元件及谐振臂 构成第一谐振单元; 第一导电分支、 第二导电分支及短臂构成第二谐振单元。
其中, 所述加载元件为一电感。
其中, 所述馈电部、 第一导电分支、 第二导电分支及短臂相互围绕形成带 有一缺口的长方形图案。
相对现有技术,利用上述双频天线谐振在 88(Γ960ΜΗζ频段和 171(Tl880MHz 频段, 并通过引入极性与非极性高分子共聚物的形式来降低介质基板的介电常
数以及介电损耗, 从而使得天线装置损耗较少, 能量转换率提高, 同时通过天 线选型、 优化天线选型设计进一步提高了天线装置的增益等综合性能。
【附图说明】
图 1为本发明天线装置的第一实施例的立体透视图;
图 2为图 1所示天线装置的第一表面的示意图;
图 3为本发明天线装置第一实施例的介质基板上的通孔示意图;
图 4为本发明天线装置第一实施例的介质基板上的第二表面的示意图; 图 5 为本发明天线装置第一实施例的介质基板上的开设金属化过孔的示意 图;
图 6为图 1所示天线装置 S11的仿真参数图;
图 7为图 1所示天线装置在在 88(Γ960ΜΗζ频段和 171(Γΐ880ΜΗζ频段的史 密斯圆图;
图 8为图 1所示天线装置在 900MHz频段工作的仿真场型图;
图 9为图 8所示场型图的 E面的方向图;
图 10为图 1所示天线装置在 1800MHz频段工作的仿真场型图;
图 11为图 10所示场型图的 E面的方向图;
图 12为本发明天线装置第二实施例的立体透视图;
图 13为图 12所示天线装置的第一表面的示意图;
图 14为图 12所示天线装置介质基板的通孔示意图;
图 15为图 12所示天线装置介质基板的背面示意图;
图 16为图 12所示天线装置介质基板的过孔示意图;
图 17为图 12所示天线装置 S11的仿真参数图;
图 18为图 12所示天线装置在 88CT960顯 z频段和 1710〜1880顯 z频段施密 特圆图;
图 19为图 18所示史密斯圆图上各个频点对应参数表;
图 20为图 12所示天线装置在 920MHz频段工作的仿真场型 E面的方向图; 图 21为图 12所示天线装置在 1800MHz频段工作的仿真场型 E面的方向图; 图 22为本发明天线装置第三实施例第一表面示意图;
图 23为本发明天线装置第三实施例第二表面示意图;
图 24为图 22和图 23所示天线装置的立体透视图;
图 25为图 22和图 23所示天线装置 S11的仿真参数图;
图 26为图 22和图 23所示天线装置在 920MHz频段工作的仿真方向图; 图 27为图 22和图 23所示天线装置在 1800MHz频段工作的仿真方向图; 图 28为图 22和图 23所示天线装置的史密斯圆图;
图 29为本发明天线装置一实施例的立体透视图;
图 30为图 29所示天线装置 S 11的仿真参数图;
图 31为图 29所示天线装置的史密斯圆图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细说明。
请参阅图 1, 为本发明天线装置的第一实施例的立体透视图。天线装置包括 一介质基板 1及设置于所述介质基板 1两表面上的一天线单元 13, 所述介质基 板 1包括一第一表面 12(参考图 2 )和与所述第一表面 12相对的一第二表面 11。 所述天线单元 13包括一第一谐振频段单元 133和一第二谐振频段单元 135, 其 中, 第一谐振频段单元 133由点 EFGHJ连接而成, 第二谐振频段单元 135由点 EI连接而成; 所述第一谐振频段单元 133和第二谐振频段单元 135相互耦合关 联且共用一馈电部 E。在本实施方式中, 第一谐振频段单元 133和一第二谐振频 段单元 135均设置所述介质基板 1的第二表面 11上。 在其他实施方式中, 第一 谐振频段单元 133和一第二谐振频段单元 135分别设置于所述介质基板 1的第 一表面 12和第二表面 11上。
请一并参阅图 2、 图 3、 图 4和图 5。 图 2为图 1所示天线装置的第一表面
的示意图。 图 3为本发明天线装置第一实施例的介质基板上的通孔示意图。 图 4 为本发明天线装置第一实施例的介质基板上的第二表面的示意图。 图 5 为本发 明天线装置第一实施例的介质基板上的开设金属化过孔的示意图。 所述天线单 元 13还包括一微带馈线 134、 一第一扼流部 137、 一第二扼流部 136及接地单 元 141/142, 其中, 第一扼流部 137由点 AB连接而成, 第二扼流部 136由点 CD 连接而成。 在本实施方式中, 所述第一扼流部 137为 880MHz〜960MHz频段扼流 线, 第二扼流部 136为 1710MHz〜1880MHz频段扼流线。
所述接地单元 141\142包括设置第一表面 12上的第一接地部 141和设置第 二表面 11上的第二接地部 142, 第一接地部 141设置于所述第二接地部 142在 第一表面 12内投影区域内, 所述第一接地部 141通过金属化过孔 138与第二接 地部 142电连接。
所述微带馈线 134包括设置于第一表面 12上的一馈线 1341、分布所述馈线 1341两侧的第一外导体 1342及设置于第二表面 11上的第二外导体 1343。 所述 馈线 1341和第一外导体 1342设置于第二外导体 1343在第一表面 12投影区域 内。 所述第二外导体 1343的另一端 (M端) 延伸成所述第二接地部 142。
所述馈线 1341—端 (N端) 与所述馈电部 E电连接, 另一端 (M端) 延伸 成一导电连接部 15。在本实施方式中, 所述导电连接部 15呈圆状且在中心开设 一通孔 151。 所述导电连接部 15与第一接地部 141相对绝缘设置。 第一扼流部 137和第二扼流部 136对称地设置于第二外导体 1343两侧且相互平行。 所述第 二外导体 1343的一端 (N端) 与所述第一扼流部 137的一端 (B端) 和第二扼 流部 136的一端 (D端) 电连为一体。
在本实施方式中,天线装置的介质基板 1上设置若干个任意形状的通孔 18。 在本实施方式中, 所述通孔 18为长方形。 所述第一外导体 1342对应的介质基 板 1上开设若干个金属化过孔 138。 所述金属化过孔 138用于将位于第一表面 12的第一外导体 1342和第二表面 11的第二外导体 1343电连接。所述金属化过 孔 138还用于将位于第一表面 12的第一接地部 141和第二表面 11的第二接地
部 142电连接。
在本实施方式中, 所述天线装置还包括一微波高频连接器 17, 导电连接部 15与所述微波高频连接器 17的内导体 (图未示) 电连接。 所述第二接地部 142 与微波高频连接器 17的外导体电连接。 其中微波高频连接器 17亦称 SMA信号 连接器 (参阅图 1 )。 在本实施方式中, 所述第一谐振频段单元 133的谐振频段 是 880MHz〜960MHz ; 第二谐振频段单元 135的谐振频段是 1710MHz〜1880MHz。 所 述微波高频连接器 17内导体穿过所述通孔 151与导电连接部 15电接触。
在其他实施方中, 所述第一谐振频段单元 133与第二谐振频段单元 135分 别设置在一第一表面 12和第二表面 11上,且在所述馈电部 E对应的介质基板 1 上设置的若干金属化过孔 (图未示), 所述第一谐振频段单元 133通过所述金属 化过孔与第二谐振频段单元 135 电连接, 使得同轴信号线 (图未示) 电信号可 同时传导至所述第一谐振频段单元 133与第二谐振频段单元 135上。
在其他可选的实施方式中, 所述第一谐振频段单元 133 和第二谐振频段单 元 135蚀刻成两个单独的电导体, 并通过一相关联的导体连接。
对本实施例的天线装置进行仿真测试结果如下:
请参阅图 6, 所示天线装置 S 11 的仿真参数图。 所述天线装置的在 880〜960顯 z 频段和 171CT1880顯 z 频段均有很好增益性能。 如下表: 分别在 880MHz (ml ) , 960MHz (m2 )、 908MHz (m6 )、 1710MHz (m3 )、 1810MHz (m5 ) 及 1880MHz (m4 ) 对应的 Sl l参数数值: 频率点 X Y
ml 0. 8800 2. 0803 m2 0. 9600 3. 0899 m3 1. 7100 1. 4627 m4 1. 8800 2. 4113 m5 1. 8100 2. 9244
m6 0. 9080 1. 1025 请参阅图 7,天线装置在在 88CT960顯 z频段和 171CT1880顯 z频段施密特圆 图。
请参阅图 8和图 9, 所示天线装置在 900MHz频段工作的仿真场型图及 E面 的方向图。 从场型图中可以看出, 天线装置在 900MHz频段左右是全向性天线且 增益均达 1. 9dB, 接近理论值。
请参阅图 10和图 11, 所示天线装置在 1800MHz频段工作的仿真场型图及 E 面的方向图。 从场型图中可以看出, 天线装置在 1800MHz 频段左右是全向性天 线且增益均达 3. 38dB。
请参阅图 12至图 16,本发明第二实施例的天线装置包括一介质基板 2及设 置于所述介质基板 2两表面上的一天线单元 23, 所述介质基板 2包括一第一表 面 22 (参考图 13 ) 和与所述第一表面 22相对的一第二表面 21。 所述天线单元 23包括一第一谐振频段单元 233和一第二谐振频段单元 235, 其中, 第一谐振 频段单元 233由点 EFGHJ组成, 第二谐振频段单元 235由点 EC组成; 所述第一 谐振频段单元 233和第二谐振频段单元 235相互耦合关联且共用一馈电部 E。在 本实施方式中, 第一谐振频段单元 233和一第二谐振频段单元 235均设置所述 介质基板 2的第一表面 22上。 在其他实施方式中, 第一谐振频段单元 233和一 第二谐振频段单元 235分别设置于所述介质基板 2的第一表面 22和第二表面 21 上。
分别为本发明天线装置第一表面、 介质基板上的通孔、 第二表面及介质基 板上的开设金属化过孔的平面示意图。所述天线单元 23还包括一微带馈线 234、 一扼流部 237及接地单元 241/242, 其中, 扼流部 237由点 AB连接形成。 所述 微带馈线 234包括设置于第一表面 22上且与所述馈电部 E相连的一馈线 2341、 分布所述馈线 2341两侧的第一外导体 2342及设置于第二表面 21上的第二外导 体 2343。所述馈线 2341和第一外导体 2342设置于第二外导体 2343在第一表面
22投影区域内。 所述第二外导体 2342的另一端 (N端) 延伸成所述第二接地部 242。
在本实施方式中, 所述扼流部 237为 1710MHz〜1880MHz频段扼流线。 在其 他实施方式中, 所述扼流部 237为 880MHz〜960MHz频段扼流线。
所述接地单元 241/242包括设置第一表面 22上的第一接地部 241和设置第 二表面 21上的第二接地部 242, 所述第一接地部 241设置于第二接地部 242在 第一表面 22内投影区域内, 在所述投影区内的介质基板 2上开设的若干金属化 过孔 238, 所述第一接地部 241通过所述若干金属化过孔 238与第二接地部 242 电连接。
所述微带馈线 234—端 (M端) 与所述馈电部 E电连接, 另一端 (N端) 延 伸成一导电连接部 25。在本实施方式中, 所述导电连接部 25呈圆状且在中心开 设一通孔 251。 所述导电连接部 25与第一接地部 241相对绝缘设置。 所述扼流 部 237对称地且平行第二外导体 2343两侧设置。 所述第二外导体 2343的一端 (M端) 与所述扼流部 237的一端 (B端) 电连为一体。
在本实施方式中,天线装置的介质基板 2上设置若干个任意形状的通孔 238。 在本实施方式中, 所述通孔 238 为长方形以减少本发明所述天线装置的宽度。 所述第一外导体 2342对应的介质基板 2上开设若干个金属化过孔 238。 所述金 属化过孔 238用于将位于第一表面 22的第一外导体 2342和第二表面 21的第二 外导体 2343电连接。
在本实施方式中, 所述天线装置还包括一微波高频连接器 27, 导电连接部 25通过所述通孔 251与所述微波高频连接器 27的内导体(图中未示出)电连接。 所述第二接地部 242与上述微波高频连接器 27的外导体电连接。 其中微波高频 连接器 27采用微波高频连接器, 亦称 SMA信号连接器 27 (参阅图 12 )。 在本实 施方式中, 所述第一谐振频段单元 233的谐振频段是 880MHz〜960MHz ; 第二谐振 频段单元 235的谐振频段是 1710MHz〜1880MHz。 所述微波高频连接器 27的内导 体穿过所述通孔 251与导电连接部 25电接触。
在其他实施方中, 所述第一谐振频段单元 233与第二谐振频段单元 235分 别设置在一第一表面 22和第二表面 21上,且在所述馈电部 E对应的介质基板 2 上设置的若干金属化过孔 (图中未示出), 所述第一谐振频段单元 233通过所述 金属化过孔与第二谐振频段单元 235 电连接, 使得同轴信号线 (图未示) 电信 号可同时传导至所述第一谐振频段单元 233与第二谐振频段单元 235上。
在其他可选的实施方式中, 所述第一谐振频段单元 233 和第二谐振频段单 元 235蚀刻成两个单独的电导体, 并通过一相关联的导体连接。
对本实施例的天线装置进行仿真测试结果如下:
请参阅图 17, 所示天线装置 S11 的仿真参数图。 所述天线装置的在 880〜960顯 z 频段和 171CT1880顯 z 频段均有很好增益性能。 如下表: 分别在 880MHz (ml), 920 MHz (m2)、 960 MHz (m3)、 1710MHz (m4)、 1800MHz (m5)、 1880MHz (m6)、 1733MHz (m7) 及 1854MHz (m8) 对应的 SI 1参数增益数值:
请参阅图 18和图 19,天线装置在 880〜960ΜΗζ频段和 171(Tl880MHz频段施 密特圆图。表示分别在 1810MHz (ml), 1727.5 MHz (m2)、 1865MHz (m3)、 875MHz (m4)、 902.5MHz (m5) 及 957.5MHz (m6) 对应的驻波数值。
请参阅图 20, 所示天线装置在 920MHz频段工作的仿真场型 E面的方向图。 从场型图中可以看出, 天线装置在 900MHz 频段左右是全向性天线且增益均达
1. 56dBi o
请参阅图 21,所示天线装置在 1800MHz频段工作的仿真场型 E面的方向图。 从场型图中可以看出, 天线装置在 1800MHz 频段左右是全向性天线且增益均达
2. 28dBi o
请参阅图 22和图 23,为天线装置第三实施例第一表面和第二表面的示意图。 天线装置包括一介质基板 3及一天线单元 33, 所述介质基板 3包括一第一表面 31和与所述第一表面 31相对的一第二表面 32, 天线单元 33包括一第一谐振频 段单元 333和一第二谐振频段单元 335且设置所述介质基板 3的第一表面 31上, 其中, 第一谐振频段单元 233由点 EFGHJ组成, 第二谐振频段单元 235由点 EC 组成; 所述第一谐振频段单元 333和第二谐振频段单元 335相互耦合关联且共 用一馈电部 E , 所述馈电部 E对应的介质基板 3上开设一个通孔 34。 所述天线 装置还包括一接地单元 35, 所述接地单元 35设置于所述通孔 34的介质基板 3 边缘周围。
在本实施方式中, 请参阅图 24, 为所示天线装置的立体透视图。 所述天线 装置还包括一铜轴信号线 36, 馈电部 E通过所述通孔 34与所述铜轴信号线 36 的内导体 (图中未示出) 电连接。 所述接地单元 35上述铜轴信号线 36的外导 体电连接。 其中铜轴信号线 36采用微波高频连接器, 亦称 SMA信号连接器。
所述第一谐振频段单元 333的平面视图的形状大致呈 "G"字形状, 且谐振 频段是 88(Γ960ΜΗζ ;第二谐振频段单元 335的平面视图的形状大致呈反向的" L " 字形状, 且谐振频段是 171(Γΐ88(ΜΗζ。
在其他实施方中, 所述第一谐振频段单元 333与第二谐振频段单元 335分 别设置在一第一表面 31和第二表面 32上,且在所述馈电部 Ε对应的介质基板 3 上设置一金属化过孔 (图中未示出), 所述第一谐振频段单元 333通过所述金属 化过孔与第二谐振频段单元 335电连接, 使得同轴信号线 36电信号可同时传导
至所述第一谐振频段单元 333与第二谐振频段单元 335上。
在其他可选的实施方式中, 所述第一谐振频段单元 333 和第二谐振频段单 元 335蚀刻成两个单独的电导体, 并通过一相关联的导体连接, 所述关联的导 体为馈电部。
请参阅图 25,为本天线装置 S11 的仿真参数图。 所述天线装置的在 880〜960顯 z 频段和 171(Γΐ880ΜΗζ 频段均有很高的增益值。 如下表: 分别在 920MHz和 1800MHz对应的 S11参数数值:
请参阅图 26和图 27, 天线装置在 920MHz仿真方向图及 1800MHz仿真方向 图。 其中所述天线装置在 920顯 z的增益为 1. 56dbi, 而天线装置在 1800顯 z 的 增益为 2. 2dbi。
图 28为图 1所示天线装置的史密斯圆图。所述天线装置驻波比参数如下表:
从上述表格数据来,所述天线装置在 920MHz的驻波比低至 1. 8,在 1810MHz 的驻波比低至 1. 1,可以看出该 GPRS双频天线在 920MHz和 1810MHz频率点有很 好的驻波比, 完全满足相应电子设备需求。
请参阅图 29, 为本发明天线装置的一实施例的立体透视图。 天线装置主要 参数性能相关是天线选型和确定选型之后的天线依附介质, 即介质介电损耗等 参数。 本发明的天线装置包括一介质基板 4及设置于所述介质基板 4表面上的 一单极天线导体 43。所述介质基板 4包括一第一表面 41 (参考图 13 )和与所述 第一表面 41相对的一第二表面。 本发明天线装置用于 GPRS通讯***中, 可应
用于相关***远程收费、 人、 物等定位装置中。 以下分两个部分介绍本发明的 天线装置。
天线装置选型设计:
所述单极天线导体 43包括一馈电部 A、 由所述馈电部 A延伸一第一导电分 支 AC和一短臂 F、 在所述第一导电分支 AC中间位置形成一第二导电分支 BH、 在所述第一导电分支 AC相对隔离的设置一谐振臂 DE及用于连接第一导电分支 AC和谐振臂 DE的一加载元件 42。
在本实施方式中, 加载元件 42为一电感。 所述第一导电分支 AC与所述谐 振臂 DE设置于同一直线上。第二导电分支 BH向第一导电分支 AC弯折成倒 "L " 型。 所述馈电部 A、 第一导电分支 AC、 第二导电分支 BH及短臂 F相互围绕形成 带有一缺口 46的长方形图案。
在本实施方式中, 所述馈电部 A及对应位置上开设一通孔 44, 用于固定一 高频连接器 (SMA连接公头)。
所述单极天线导体 43用于谐振 880MHz〜960MHz和 1710MHz〜1880MHz两个频 段。 其中所述第一导电分支 AC、 第二导电分支 BH、 短臂 F、 加载元件 42及谐振 臂 DE构成第一谐振单元 433用于决定 880MHz〜960MHz谐振频段各个参数值; 第 一导电分支 AC、 第二导电分支 BH及短臂 F构成第二谐振单元 435用于决定 1710MHz〜1880MHz谐振频段各个参数值。
对本发明的天线装置进行仿真测试结果如下:
请参阅图 30,所示天线装置 S11仿真参数图。所述天线装置的在 88(Γ960ΜΗζ 频段和 171(Tl880MHz频段均有很好增益性能。如下表:分别在 880ΜΗζ( 1 )、920ΜΗζ ( 2 )、 960MHz ( 3 )、 1710MHz (4)、 1800MHz ( 5 )及 1880MHz ( 6 )对应的 Sl l参 数增益数值:
1710 MHz 2. 2
1800 MHz 1. 5
1880 MHz 2. 8
请参阅图 31, 表示天线装置在在 880〜960顯 z频段和 1710〜1880顯 z频段施 密特圆图。 天线装置在在 88(Γ960ΜΗζ频段和 171(Γΐ880ΜΗζ频段对应的驻波值 为:
从整体的测试结果看出, 通过引入极性与非极性高分子共聚物的形式来降 低介质基基板的介电常数以及介电损耗, 从而使得天线装置损耗较少, 能量转 换率提高; 同时通过天线选型、 优化天线选型设计进一步提高了天线装置的增 益等综合性能。
天线装置的介质基板的设计:
为了降低天线单元的能量损耗, 提高整个天线装置的性能, 采用低介电常 数低损耗介质基板, 要求天线介质基板在 1GHz频率下工作, 具有 4. 0的标称 介电常数和 0. 008的电损耗正切量。所述介质基板包括玻纤布、环氧树脂及包 含与所述环氧树脂发生交联反应的化合物。 所述介质基板第一类实施方式如下: 所述介质基板制作工艺如下: 首先, 提供一浸润溶液包括: 第一组份, 包 含有环氧树脂; 第二组份, 包含与所述环氧树脂发生交联反应的化合物; 及一
种或者多种溶剂。 其中第一组份和第二组份按照一定比例配置混合。 所述浸润溶液经过搅拌后、 将所述一玻纤布浸润所述浸润溶液中使第一组 份与第二组份吸附在玻纤布中或者表面上; 然后烘拷所述玻纤布使所述一种或 者多种溶剂挥发, 并使第一组份与第二组份相互化合交联形成半固化片或者固 化片。 半固化片是指将吸附第一组份与第二组份的玻纤布在烘拷温度相对较低 环境中, 第一组份包含环氧树脂与第二组份包含化合物部分发生化合交联反应 的软性混合物。 固化物是指将吸附第一组份与第二组份的玻纤布在烘拷温度相 对较高环境中, 第一组份包含环氧树脂与第二组份包含化合物部分发生化合交 联反应的相对较硬的混合物。
在本实施方式中, 所述浸润过的玻纤布通过低温烘烤形成半固化物 (呈片 状), 然后所述半固化物剪裁成剪裁片, 根据厚度需要将所述多片剪裁片叠合并 进行热压成本实施所述的多层介质基板 (即多层层压板或片)。
在具体的实施例中, 所述第二组份的化合物可选用包含由极性高分子与非 极性高分子化合的共聚物, 如苯乙烯马来酸酐共聚物。 可以理解的是, 可以与 环氧树脂发生化合交联反应的共聚物均可用于本实施方式的配方成份。 其中本 实施方式的苯乙烯马来酸酐共聚物, 其分子式如下:
在上述苯乙烯马来酸酐共聚物分子式中包含 4个苯乙烯。 在其他实施方式 中, 可以选择相应分子量, 如苯乙烯马来酸酐共聚物分子式中包含 6、 8个苯乙 烯或者任意个数。 环氧树脂是泛指分子中含有两个或两个以上环氧基团的有机 高分子化合物。
在其他的实施例中, 所述第二组份的化合物还可以选用氰酸酯预聚体或者 选用苯乙烯马来酸酐共聚物与氰酸酯预聚体按照任意比例混合的混合物。
在具体的实施例中, 所述环氧树脂与苯乙烯马来酸酐共聚物按照官能值的 比例进行配制, 然后加入一定量的溶剂配成溶液。 所述环氧树脂与苯乙烯马来 酸酐共聚物混合工艺采用常规设备进行加工, 如普通搅拌桶以及反应釜使环氧 树脂与苯乙烯马来酸酐共聚物均匀混合, 从而使所述溶液中的环氧树脂与苯乙 烯马来酸酐共聚物均匀混合。
在具体的实施例中, 通过加入一定的促进剂促使上述浸润溶液 200-400 秒 时间内胶化 (选用胶化环境温度 17ΓΟ,其中促进上述浸润溶液胶化时间 260秒 左右 (如 258-260秒、 或 250-270秒等) 效果较好。 所述促进剂可选用包括但 不限于叔胺类, 咪唑类以及三氟化硼单乙胺中的任意一类或他们之间混合物。
所述一种或者多种溶剂可以选用包括但不限于丙酮、 丁酮、 N, N-二甲基甲 酰胺、 乙二醇甲醚、 甲苯中任意一种或上述两种以上溶剂之间混合形成的混合 溶剂。
在另一实施例中, 所述浸润溶液包括: 第一组份, 包含环氧树脂; 第二组 份, 包含与所述环氧树脂发生交联反应的化合物; 及一种或者多种溶剂。 所述 第二组份的化合物选用苯乙烯马来酸酐共聚物与氰酸酯预聚体按照任意比例混 合的混合物。 其中所述氰酸酯预聚体浓度 75%。 促进剂选用二甲基咪唑; 所述溶 剂选用丁酮。 该实施方式浸润溶液具体配方如下表:
在上述配方中同时加入了苯乙烯马来酸酐共聚物和氰酸酯预聚体, 两者均 与环氧树脂均能发生化合交联反应。
第二类实施方式如下:
在本发明第二类实施方式中, 所述低介电常数低损耗的介质基板制造过程 还包括如下工艺: 首先, 将第二组份包含与所述环氧树脂发生交联的反应的化
合物与所述环氧树脂按照官能值的比例进行配制, 然后加入一定量的溶剂配成 溶液。 在具体的实施例中, 所述化合物包含极性高分子与非极性高分子化合的 共聚物, 其中较佳实施例的共聚物可以选用苯乙烯马来酸酐共聚物。 所述环氧 树脂与苯乙烯马来酸酐共聚物混合工艺采用常规设备进行加工, 如普通搅拌桶 以及反应釜使环氧树脂与苯乙烯马来酸酐共聚物均匀混合。 其中本实施方式的 苯乙烯马来酸酐共聚物, 其分子式如下:
在上述苯乙烯马来酸酐共聚物分子式中包含 4个苯乙烯。 在其他实施方式 中, 可以选择相应分子量, 如苯乙烯马来酸酐共聚物分子式中包含 6、 或 8个苯 乙烯。 环氧树脂是泛指分子中含有两个或两个以上环氧基团的有机高分子化合 在其他的实施例中, 所述第二组份的化合物还可以选用氰酸酯预聚体或者 选用苯乙烯马来酸酐共聚物与氰酸酯预聚体按照任意比例混合的混合物。
在具体的实施例中, 使所述溶液中的环氧树脂与苯乙烯马来酸酐共聚物在 一定条件下能进行化合交联反应, 发生化合交联反应后依附于所述玻纤布, 从 而形成本发明的介质基板。
所述一种或者多种溶剂可以选用包括但不限于丙酮、 丁酮、 Ν, Ν-二甲基甲 酰胺、 乙二醇甲醚、 甲苯中任意一种或上述之间混合溶剂。
所述溶液一具体实施例各种成分比例如下表:
环氧树脂 共聚物 氰酸酯预聚体 二甲基咪唑 丁酮 3、里 固含量 固含量 100.0% 100.0% 75.0% 100.0% 0.0% 0.0 当量 233 490 139 0.0 0.0 0.0
60.23% 固体树脂 100.0 139.8 20.0 0.2000 0.0 260.0 液体树脂 100.0 139.8 26.7 0.2000 165.0 431.7
设计加入量 100.0 139.8 26.7 0.200 165.0 431.7 上述溶液配方包括环氧树脂、 苯乙烯马来酸酐共聚物、 氰酸酯预聚体、 促 进剂二甲基咪唑及一种溶剂丁酮。 在上述配方中同时加入了苯乙烯马来酸酐共 聚物和氰酸酯预聚体, 两者均与环氧树脂能化合交联。
然后, 从上述溶液中提取所述少量测试样本, 在某一特定温度环境测试所 述溶液胶化时间, 通过添加促进剂来调节所述溶液在该定温度环境胶化时间。 可以通过加入一种或多种促进剂促使上述溶液在 200-400秒时间内胶化, 其中 所述某一特定温度环境可是单一一温度值或者一选定的特定温度范围, 在本实 施方式, 通过设定在 171 摄氏度环境进行胶化时间, 使得上述溶液在胶化时间 260秒左右 (如 258-260秒、 或 250-270秒等)效果较佳。 所述促进剂可选用包 括但不限于选用叔胺类, 咪唑类以及三氟化硼单乙胺中的任意一类或他们之间 混合物。
第三步, 当上述测试样本在 200-400 秒时间范围内胶化时, 将玻纤布在所 述溶液中浸润后取出烘干, 形成组合物。 在该具体步骤中, 将玻纤布浸入溶液 中充分浸润保证所述环氧树脂与苯乙烯马来酸酐共聚物吸附在玻纤布中或者表 面上, 然后浸入溶液的玻璃布通过悬挂于鼓风干燥箱在 180°C烘烤 5分钟左右, 目的就是将溶剂丁酮充分挥发, 并且使得所述环氧树脂与苯乙烯马来酸酐共聚 物化合交联反应, 玻璃布与所述化合交联反应的产物制得半固化组合物。 可以 理解的是, 延长烘烤时间和或提高烘烤温度, 即可形成固化组合物。 一般大量 工业生产采用垂直上胶机中浸胶子***和烘箱子***中完成。
最后, 将烘干的化组合物与导电箔进行压合。 在该具体步骤中, 将烘干的 化组合物 (半固化板或半固化片) 与导电箔在真空热压机中压合。 所述导电箔 选用包含铜、 银、 金、 铝或上述材料合金材料等制得的导电材料。 由于铜材料 的价格相对较低, 因此选用铜制成的导电箔适用产业化。 最后通过蚀刻工艺将 上述覆铜介质基板蚀刻成本发明所对应的天线装置。
上面结合附图对本发明的实施例进行了描述, 但是本发明并不局限于上述 的具体实施方式, 上述的具体实施方式仅仅是示意性的, 而不是限制性的, 本
领域的普通技术人员在本发明的启示下, 在不脱离本发明宗旨和权利要求所保 护的范围情况下, 还可做出很多形式, 这些均属于本发明的保护之内。
Claims
1、 一种天线装置, 其特征在于, 包括:
一介质基板, 包括一第一表面和与所述第一表面相对两的一第二表面; 一天线单元, 包括一第一谐振频段单元和一第二谐振频段单元且设置所述 介质基板的表面上。
2、 根据权利要求 1所述的天线装置, 其特征在于,
所述第一谐振频段单元和第二谐振频段单元共用一馈电部;
所述天线单元还包括一微带馈线、 一第一扼流部、 一第二扼流部及接地单 元; 微带馈线包括设置于第一表面上的一馈线、 分布所述馈线两侧的第一外导 体及设置于第二表面上的第二外导体; 第一外导体通过所述介质基板上开设的 若干金属化过孔与第二外导体电连接; 馈电部与所述馈线一端相连;
所述第一扼流部和第二扼流部设置于第二外导体两侧; 所述第二外导体的 一端与所述第一扼流部的一端和第二扼流部的一端电连为一体。
3、 根据权利要求 2所述的天线装置, 其特征在于, 所述馈线和第一外导体 设置于第二外导体在第一表面投影区域内。
4、 根据权利要求 3 所述的天线装置, 其特征在于, 所述第一扼流部为 880MHz〜960MHz频段扼流线, 第二扼流部为 1710MHz〜1880MHz频段扼流线。
5、 根据权利要求 4所述的天线装置, 其特征在于, 所述接地单元包括设置 第一表面上的第一接地部和设置第二表面上的第二接地部, 所述第二外导体的 另一端延伸成所述第二接地部, 第一接地部设置于所述第二接地部在第一表面 内投影区域内; 所述第一接地部通过所述介质基板上开设的若干金属化过孔与 第二接地部电连接。
6、 根据权利要求 5所述的天线装置, 其特征在于, 所述第一扼流部和第二 扼流部对称地且平行设置于第二外导体两侧。
7、 根据权利要求 6所述的天线装置, 其特征在于, 所述第一谐振频段单元 和第二谐振频段单元设置于同一表面上且连为一体。
8、 根据权利要求 7所述的天线装置, 其特征在于, 所述微带馈线另一端延 伸成一导电连接部, 所述导电连接部呈圆状且在中心开设一通孔, 所述导电连 接部与第一接地部相对绝缘设置。
9、 根据权利要求 1所述的天线装置, 其特征在于, 所述第一谐振频段单元 和第二谐振频段单元共用一馈电部;
所述天线单元还包括一微带馈线、 一扼流部及接地单元; 微带馈线包括设 置于第一表面上的一馈线、 分布所述馈线两侧的第一外导体及设置于第二表面 上的第二外导体; 第一外导体通过所述介质基板上开设的若干金属化过孔与第 二外导体电连接; 馈电部与所述馈线一端相连;
所述扼流部对称地设置于第二外导体两侧; 所述第二外导体的一端与所述 扼流部的一端电连为一体。
10、 根据权利要求 9所述的天线装置, 其特征在于, 所述馈线和第一外导 体设置于第二外导体在第一表面投影区域内。
11、 根据权利要求 10 所述的天线装置, 其特征在于, 所述扼流部为 880MHz〜960MHz频段扼流线或 1710 MHz 〜 1880MHz频段扼流线。
12、 根据权利要求 11所述的天线装置, 其特征在于, 所述接地单元包括设 置第一表面上的第一接地部和设置第二表面上的第二接地部, 所述第二外导体 的另一端延伸成所述第二接地部, 所述第一接地部设置于第二接地部在第一表 面内投影区域内; 所述第一接地部通过所述介质基板上开设的若干金属化过孔 与第二接地部电连接。
13、 根据权利要求 12所述的天线装置, 其特征在于, 所述第一谐振频段单 元和第二谐振频段单元设置于同一表面上且连为一体。
14、 根据权利要求 13所述的天线装置, 其特征在于, 所述微带馈线另一端 延伸成一导电连接部, 所述导电连接部呈圆状且在中心开设一通孔, 所述导电 连接部与第一接地部相对绝缘设置。
15、 根据权利要求 1 所述的天线装置, 其特征在于, 所述第一谐振频段单 元和第二谐振频段单元相互耦合关联且共用一馈电部; 所述馈电部对应的介质 基板上开设一通孔; 一接地单元, 设置于所述通孔的介质基板边缘上。
16、 根据权利要求 15所述的天线装置, 其特征在于, 所述第一谐振频段单 元和第二谐振频段单元设置于同一表面上且连为一体。
17、 根据权利要求 15所述的天线装置, 其特征在于, 所述第一谐振频段单 元设置于第一表面上; 第二谐振频段单元设置于第二表面上, 且在所述馈电部 对应的介质基板上设置一金属化过孔, 所述第一谐振频段单元通过所述金属化 过孔与第二谐振频段单元电连接。
18、 根据权利要求 1 所述的天线装置, 其特征在于, 其中所述第一导电分 支、 第二导电分支、 短臂、 加载元件及谐振臂构成第一谐振单元; 第一导电分 支、 第二导电分支及短臂构成第二谐振单元。
19、 根据权利要求 18所述的天线装置, 其特征在于, 所述加载元件为一电 感。
20、 根据权利要求 19所述的天线装置, 其特征在于, 所述馈电部、 第一导 电分支、 第二导电分支及短臂相互围绕形成带有一缺口的长方形图案。
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CN201210051589.9A CN103296381B (zh) | 2012-03-01 | 2012-03-01 | 天线装置 |
CN201210051588.4A CN103296380B (zh) | 2012-03-01 | 2012-03-01 | 天线装置 |
CN201210051706.1 | 2012-03-01 | ||
CN2012100517061A CN103296374A (zh) | 2012-03-01 | 2012-03-01 | 天线装置 |
CN201210051588.4 | 2012-03-01 | ||
CN201210068080.5 | 2012-03-15 | ||
CN201210068080.5A CN103311655B (zh) | 2012-03-15 | 2012-03-15 | 双频gprs天线装置 |
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CN102244315A (zh) * | 2010-02-02 | 2011-11-16 | 莱尔德技术股份有限公司 | 用于无线电通信装置的天线装置 |
CN202150546U (zh) * | 2011-05-31 | 2012-02-22 | 深圳光启高等理工研究院 | 一种天线及具有该天线的mimo天线 |
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US20030063030A1 (en) * | 2001-09-28 | 2003-04-03 | Vladimir Stoiljkovic | Integral antenna and radio system |
CN1661855A (zh) * | 2004-02-26 | 2005-08-31 | 松下电器产业株式会社 | 装载天线的无线装置 |
CN102244315A (zh) * | 2010-02-02 | 2011-11-16 | 莱尔德技术股份有限公司 | 用于无线电通信装置的天线装置 |
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