WO2013114464A1 - 電子線干渉装置および電子線干渉法 - Google Patents
電子線干渉装置および電子線干渉法 Download PDFInfo
- Publication number
- WO2013114464A1 WO2013114464A1 PCT/JP2012/000724 JP2012000724W WO2013114464A1 WO 2013114464 A1 WO2013114464 A1 WO 2013114464A1 JP 2012000724 W JP2012000724 W JP 2012000724W WO 2013114464 A1 WO2013114464 A1 WO 2013114464A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electron beam
- image
- interference
- phase distribution
- region
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
- G01N23/041—Phase-contrast imaging, e.g. using grating interferometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/226—Image reconstruction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/25—Tubes for localised analysis using electron or ion beams
- H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
Definitions
- the present invention relates to an electron beam interferometer and an electron beam interferometry that perform wide-range interference measurement using an electron beam.
- An electron biprism is a device in an electron optical system that has the same effect as a Fresnel double prism in optics, and there are two types: an electric field type and a magnetic field type.
- the one that is widely used is an electric field type electron biprism having a shape as shown in FIG. That is, it is composed of the ultrafine wire electrode 9 in the center and the parallel plate type ground electrode 99 held so as to sandwich the electrode.
- the central fine wire electrode 9 when a positive voltage is applied to the central fine wire electrode 9, as shown in FIG. 10, the electron beams passing through the vicinity of the central fine wire electrode 9 are deflected in a direction facing each other by the potential of the central fine wire electrode. (See electron beam trajectory 27).
- a plane 25 is drawn perpendicular to the electron trajectory 27 in FIG. 10. This is an equiphase surface when expressing an electron beam as a wave, and is generally a plane perpendicular to the electron orbit. Called the wavefront.
- ⁇ kVf using the voltage Vf applied to the central fine wire electrode and the deflection coefficient k.
- the fact that the deflection angle ⁇ of the electron beam does not depend on the incident position is an important feature for an electron optical device, and the plane wave is a plane wave and only the propagation direction is deflected and emitted from the electron biprism. This is called an electron biprism because it corresponds to the effect of a double prism in which two prisms are combined.
- a device that uses a potential to deflect an electron beam is called a field-type electron biprism, and a device that uses the Lorentz force between a magnetic field and an electron beam is called a magnetic-field electron biprism.
- description will be made using an electric field type electron biprism.
- the present invention can be configured regardless of the electric field type or the magnetic field type as long as the electron beam biprism is an apparatus that can interfere with the electron beam, and is not limited to the electric field type biprism used in the description.
- electron biprism means the whole electron biprism as an electron beam deflecting device in a broad sense including the central ultrafine electrode, When referring to the exact position in the optical system, in principle, it is described as “the center fine wire electrode of the electron biprism”.
- An electron biprism is an indispensable device for producing electron beam interference in an electron beam without a beam splitter like an optical half mirror. The reason is the function of separating the wavefront 25 of one electron beam into two waves and deflecting them in directions facing each other. As a result, the electron beam that has passed through the electron biprism and separated into two waves is superimposed behind the electron biprism to generate interference fringes 8.
- Such an electron optical system is generically called an electron beam interference optical system.
- the most common electron beam interferometer represented by electron beam holography includes a single stage electron biprism (9 and 99), an objective lens 5 and an image plane 71 of the sample 3 formed by the objective lens 5.
- a positive voltage is applied to the central fine wire electrode 9, whereby an electron beam that has passed through the sample 3 (object wave 21: in FIG. 11 passes the right side of the central fine wire electrode 9.
- Electron beam) and an electron beam transmitted through the side without the sample are superimposed to form an interference microscope image (31 and 8: sample image 31).
- the image on which the interference fringes 8 are superimposed is obtained.
- the range in which the object wave 21 and the reference wave 23 overlap is an interference microscope image, and is formed with a width W on the image plane 71 of the sample 3 behind the central thin wire electrode 9. This is called the interference area width.
- the phase change that the sample 3 gives to the wavefront of the object wave 21 is recorded as modulation of the superimposed interference fringes 8.
- Fresnel fringes due to diffracted waves generated at the end of the ultrafine wire electrode 9 are included on the left and right in the interference microscope image. This is generally the cause of the most problematic artifact for the interference microscope images (31 and 8) because the contrast is generally strong and the fringe spacing is distributed over a wide spatial frequency band from wide to narrow. For this reason, it is desirable that the phase information of the interference image is removed at the time of image processing, or the electron optical system is devised so as not to be generated.
- the interferometer devised for this purpose is a two-stage electron biprism interferometer (Patent Document 1).
- Patent Document 1 By using two electron biprisms, not only the generation of Fresnel fringes but also the interference region width W and the interference fringes.
- An optical system is configured in which the interval can be controlled almost arbitrarily.
- description will be made using the one-stage electron biprism interferometer optical system shown in FIG. ⁇ Coherence distance> Unlike the photon wave, which is a Bose particle, the wave of an electron, which is a Fermi particle, cannot be degenerated into one state.
- the angle distribution of electron motion (electron beam opening angle: ⁇ ) is pressed down to expand the wavefront as an electron wave (wavelength: ⁇ ).
- the range in which this electron wave can interfere is represented by a coherence distance R and a nominal number 1. This distance depends on the electron optical system, but in the case of a magnetic field observation optical system, a typical value is about 1 ⁇ m on the sample surface.
- FIG. 11 described above is an example of an optical system for electron beam holography that represents electron beam interferometry, but the coherence distance R on the sample surface (object surface) and the hologram on the image 71 are shown.
- There is a general relationship of 2 with the interference area width W in consideration of the magnification (M obj b / a) by the objective lens 5 (both a and b are shown in the figure).
- the thickness of the central fine wire electrode 9 of the electron biprism is ignored. That is, the presence of the center fine wire electrode 9 narrows the interference region width W.
- the observation area 3-1 of the sample is the reference wave area (ref: (Space region without sample) and interference can be recorded, and holographic observation is possible, but the region farther from the optical axis 2 than the observation region 3-1 (observation region 3-2 to observation region 3-5), that is, The inner part of the sample was outside the range of the coherence distance, and holographic observation was not possible.
- ⁇ Two-wave interference> Consider the interference of two wave fields ( ⁇ A, ⁇ B) within the coherent distance range. Strictly speaking, partial coherent handling is required, but it is handled as complete coherent for convenience of display.
- Equation 3 The intensity distribution I (x, y) created by the above is expressed by Equations 5 and 6.
- the cosine term of the third term of Equation 5 is related to the wave phase distribution and forms an interference fringe. That is, in interference, a difference ⁇ (x, y) between two wave phase distributions is observed as interference fringes. This indicates that even if the phase distribution is reproduced by the interferometric method, only the phase distribution difference is observed, not the phase distribution of each wave.
- Electron holography is also generally a measurement technique using two-wave interference. Of the two waves, one is an object wave ⁇ Obj (x, y) exp [i ⁇ Obj (x, y)] and the other is a known plane wave It is characterized by the reference wave exp [i ⁇ Ref (x, y)].
- holography is generally a method for measuring an object wave based on a known reference wave.
- the reference wave can be considered as a plane wave inclined with respect to the optical axis.
- the object wave propagates in parallel with the optical axis, and the reference wave only is propagated at an angle ⁇ in the x-axis direction.
- the object wave, reference wave, and interference as a hologram (interference microscope image)
- the intensity distribution is expressed by the following equations 7, 8, and 9. Note that R 0x in Equation 8 is a carrier spatial frequency.
- the hologram has an object image
- This interference fringe distribution characterizes electron holography.
- the amplitude distribution ⁇ Obj (x, y) and the phase distribution ⁇ Obj (x, y) of the object wave can be individually reproduced by image processing using numerical operations such as Fourier transform.
- Non-Patent Document 1 a technique is used in which the observation areas are divided and the reproduced areas are connected later as image processing (Non-Patent Document 1). Even in this case, the observable region is within the range where the reference wave can be obtained, and only the peripheral portion of the sample.
- the development of a high-intensity electron source for (1) was fundamental, and the development of a field emission electron gun for a transmission electron microscope was for this purpose.
- the brightness of the electron source determines the basic performance of the electron microscope, and it is almost impossible to change it after the development of the electron microscope. For this reason, the performance depends on the apparatus, and the range that can be devised by the optical system for the coherent distance directly derived from the brightness is quite limited.
- the observation area is expanded to the limit of the coherent area, that is, a hologram with a deteriorated SN ratio is acquired, and at the time of reproduction or after image reproduction A device has been devised to extract only the necessary information.
- the observation region exceeds the coherence distance, interference measurement is impossible in principle.
- a technique is used in which the observation areas are divided and the respective reproduced areas are connected later as image processing (Non-Patent Document 1). Even in this case, the observable region is limited to the range in which the reference wave can be obtained, and is only the peripheral portion of the sample.
- an electron beam interference device includes a light source for an electron beam, an irradiation optical system for irradiating the sample with an electron beam emitted from the light source, and an object for forming an image of the sample.
- An imaging lens system having a lens, an electron biprism arranged on the optical axis of the electron beam, an image recording device for recording a plurality of phase distribution images on the sample, and calculating the phase distribution image of the sample
- a first observation region where an electron beam that interferes with an electron beam that passes through a reference wave region by the electron beam biprism is transmitted by the electron beam biprism;
- An electron beam transmitted through the first observation region and a second observation region through which the interfered electron beam is transmitted, and the image recording apparatus includes the electron beam transmitted through the reference wave region and the first observation.
- the processing device includes: an electron beam transmitted through the reference wave region based on the second interference image recorded on the image recording device and the first interference image recorded on the image recording device;
- a phase distribution image with an electron beam transmitted through the observation region is calculated.
- the electron beam interferometry of the present application is an image forming apparatus including an electron beam light source, an irradiation optical system for irradiating the sample with an electron beam emitted from the light source, and an objective lens for forming an image of the sample.
- the electron beam interferometry of the present application is an image forming apparatus including an electron beam light source, an irradiation optical system for irradiating the sample with an electron beam emitted from the light source, and an objective lens for forming an image of the sample.
- a first step of recording an interference image an electron beam transmitted through a second observation region through which an electron beam that has interfered with an electron beam transmitted through the second observation region by the electron biprism; Electron beam transmitted through the observation area of And a first step of recording a second interference image based on the first interference image and an electron beam transmitted through the reference wave region and an electron beam transmitted through the first observation region based on the first interference image.
- a third step of calculating a phase distribution image, and a second phase distribution of an electron beam transmitted through the first observation region and an electron beam transmitted through the second observation region based on the second interference image A fourth step of calculating an image; and a fifth step of arranging and displaying the calculated first and second phase distribution images in the order in which the interference images based on the calculated phase distribution image are recorded. And a step.
- FIG. 3 is a schematic diagram for explaining that a continuous interference image is created by moving a sample to the right as compared with FIG. It is a figure which shows the experimental result which moved the sample and recorded the continuous interference image. It is a wide-range magnetic force line distribution image obtained by arranging phase distribution images reproduced from continuous interference images after a predetermined integration process. It is a schematic diagram explaining moving an electron biprism and creating a continuous interference image.
- FIG. 5 is a schematic diagram for explaining that a continuous interference image is created by moving the electron biprism to the right as compared with FIG.
- FIG. 6 is a schematic diagram for explaining that a continuous interference image is created by deflecting the electron beam irradiation angle in the right direction as compared with FIG.
- FIG. 6 is a schematic diagram which shows the example of the apparatus which implements this application.
- It is a schematic diagram which shows the spatial positional relationship at the time of the subtraction of a phase distribution (wavefront) in the case of ignoring the projection width
- FIG. 5 is a schematic diagram for explaining a method of creating a continuous interference image for each adjacent region when the interference region width W and the projection width df of the center fine wire electrode are matched. It is a schematic diagram explaining the relationship between the electric field type
- the inventor records an interference image obtained by shifting the region for each interference region width from the interference image between the reference wave region and the observation region adjacent to the reference wave, and reproducing the interference images individually.
- a method has been devised in which a difference image of the phase distribution between a predetermined observation region and a predetermined reference wave is obtained by calculating the integrated distribution. This is because the phase distribution reproduced and observed by interference microscopy is the difference between the phase distributions of the two waves used for interference (see Equation 5).
- the present invention records the interference images in order while shifting the interference wave width W to be recorded as the interference image (hologram) without distinguishing the object wave and the reference wave in the direction in which the coherence distance is restricted, After reconstructing the phase distribution image from the interference image, the phase distribution image is integrated and the interference image between the predetermined observation area and the reference wave, that is, a method for realizing normal holographic observation, or an apparatus for that purpose is there.
- the present invention even if the distance between the final observation region and the reference wave exceeds the coherence distance, if each phase image is obtained, the phase distribution exceeding the coherence distance is obtained.
- a phase distribution image using a predetermined reference wave can be obtained. Further, by performing this operation for each phase distribution and arranging the obtained phase distribution images in a predetermined order, it is possible to obtain a wide range of interference images exceeding the coherent distance.
- phase distribution reproduced from the hologram of the observation area (n) and the reference wave area (Ref) phase distribution: ⁇ Ref (x, y)). That is, the observation area (n) not near the reference wave area (Ref) is reproduced by the interference image (hologram) using the reference wave area (Ref).
- phase distribution images obtained by the procedure (6) are arranged in the order of these operations, the entire region from the observation region 3-1 to (n) is observed as a phase distribution image over a wide range. Become. That is, wide-field holography that does not depend on the coherent distance is realized. It is also possible to reproduce only the phase distribution image corresponding to the observation region to be observed, instead of arranging all the obtained images.
- each observation region from (n ⁇ 1),..., 3-3, 3-2, 3-1) from the observation region (n) to the reference wave region (Ref) It is assumed that the phase distribution is canceled out.
- the spatial positions of the respective phase distributions to be canceled must match. Therefore, operations such as adjusting the position of each phase distribution image or adjusting the positional relationship of each image during observation recording are included as necessary.
- the moving direction of the observation region is perpendicular to the longitudinal direction of the projection image on the sample of the central microwire electrode of the electron biprism that is observed as a band or a line. It is reasonable to move to However, the present application is not limited to this moving direction.
- a suitable interference microscope apparatus and method for carrying out the present invention will be described.
- FIG. 2 (a) and 2 (b) show an optical system apparatus and method for shifting the region of the interference image (8 + 31) by sequentially moving the position of the sample 3.
- FIG. FIG. 2 (a) shows how an interference image (8 + 31) is created by the reference wave region (Ref) and the observation region 3-1, and during normal electron beam interference (electron beam holography) observation. This is the state of the optical system.
- FIG. 2B shows the state of the optical system after the sample 3 is moved rightward in the drawing by the observation region width W.
- An interference image (8 + 31) between the observation area 3-1 and the observation area 3-2 is recorded on the image plane 71.
- FIG. 2A the sample region and the vacuum region are arranged with the optical axis 2 interposed therebetween, but FIG.
- the optical axis 2 is located in the sample region. After recording the interference image in the state of FIG. 2B, the sample is further moved in the same direction by the same observation region width W, and an interference image by the observation region 3-2 and the observation region 3-3 is recorded. This operation is sequentially repeated, and an observation region in a predetermined range is recorded as an interference image.
- the thickness of the sample tends to increase as the distance from the boundary region (sample edge) with the vacuum increases, it is difficult to obtain a good interference fringe contrast in the interference image between the observation region and the observation region.
- this problem can be improved by a sample preparation method using a focused ion beam apparatus (FIB).
- FIB focused ion beam apparatus
- the development of an electron beam source having high transmission power in a sample while maintaining the coherence of an electron beam such as the development of a 1 MV interference electron microscope, has been carried out, and an interference image between an observation region and another observation region has been developed. There is no problem in principle in the observation record.
- the description regarding the sample thickness is the same in the following examples, and the subsequent description is omitted.
- the optical system since the optical system is not operated during a series of interference image recording operations, if optical conditions such as the interference area width, the interference fringe interval, and the observation recording magnification are set first, the optical during the operation is set. System readjustment is not necessary. Further, since the magnification and the like are recorded under the same conditions, the image arrangement can be performed as it is after the reproduction image is acquired or the phase distribution integration process is performed to obtain a wide range of phase distribution images.
- FIG. 3 shows an experimental example performed by the method shown in FIG.
- the sample was a probe of a magnetic force microscope (MFM), and the distribution of magnetic field lines leaking into the space from the periphery of the probe was observed.
- FIG. 3 (a) is an image obtained by superimposing a whole image taken while moving the sample on one image.
- the sample probe (Tip) is in the state of 3-7 in order from the state of the upper side 3-1 in the figure.
- the interference area displayed as a white band was recorded while moving downward in the figure.
- a number indicating the region is attached to the probe position.
- a white band-like space region observed in the state 3-1 is the farthest from the probe in this experimental example. It is in a state of observing the space.
- FIG. 3B shows a reproduction phase distribution of each observation region shown in FIG. 3A, and then integration processing is performed for each predetermined phase distribution. Thereafter, a wide range of phases are matched to a predetermined spatial position. This is a distribution image. It can be seen that the lines of magnetic force generated from the probe and its surroundings change into a broader distribution as they move away from the probe.
- the numbers given in FIG. 3 (b) are observation region numbers.
- the projected width of the center fine wire electrode of the electron biprism is drawn neglecting its influence. The handling of the projection width of the center fine wire electrode will be described later.
- Patent Document 1 a two-stage electron biprism interferometer (Patent Document 1) was used in the series of experiments in FIG. Since the two-stage electron biprism interferometer strictly determines the width of the interference region, it can be said to be more suitable for the present method for recording the interference image continuously by moving each interference region. However, it is naturally possible to use a one-stage electron biprism interferometer.
- the region of the interference image (8 + 31) is shifted by sequentially moving the central microwire electrode 9 of the electron biprism in the longitudinal direction (that is, the extending direction) and the vertical direction of the projection image of the electron biprism.
- the optical system apparatus and method are shown. Since the center ultrafine wire electrode 9 of the electron biprism has a primary shape, there is no change in the longitudinal direction (that is, the extending direction) of the fine wire. Therefore, the moving direction of the electron biprism does not necessarily need to be in the direction perpendicular to the longitudinal direction of the fine line, and as a result, it may be moved in the direction perpendicular to the longitudinal direction of the fine line.
- FIG. 4 (a) is the same as FIG. 2 (a), and the ultrafine wire electrode 9 of the electron biprism is disposed on the optical axis 2, and the sample region and the vacuum region are disposed across the optical axis 2.
- FIG. 4B shows the state of the optical system after the central fine wire electrode 9 of the electron biprism has been moved in the right direction in the figure.
- the amount of movement of the central microwire electrode 9 is an amount necessary for the interference image (8 + 31) between the observation region 3-1 and the observation region 3-2 to be recorded on the image plane 71, and is shown in FIG. Although it depends on the magnification of the optical system and the position (height on the optical axis) of the central ultrafine wire electrode 9 of the electron biprism in the optical system, it is usually on the order of several microns and is a sufficiently adjustable range. .
- the second embodiment after recording the interference image in the state of FIG.
- the central fine wire electrode 9 of the electron biprism is further moved in the same direction, and the observation region 3-2 and the observation region 3 are moved.
- the operation of recording the interference image according to -3 is sequentially repeated, and an observation region in a predetermined range is recorded as an interference image.
- the central microwire electrode 9 of the electron biprism moves, the position on the image plane 71 where the interference image is formed also moves.
- the amount of movement of the electron biprism is generally larger than the sample by the magnification of the optical system, and the accuracy in fine movement control of the electron biprism is smaller than that of the sample fine movement. It's okay. Therefore, this method has an advantage for improving the resolution.
- the third embodiment is implemented using a two-stage electron biprism interferometer (Patent Document 1), the two electron biprisms must be linked with a predetermined correlation. This increases the complexity of the work, but this complexity is not a problem with a computer-controlled system (Patent Document 2). *
- the optical system is not operated during a series of interference image recording operations, if the optical conditions such as the interference area width, the interference fringe interval, and the observation recording magnification are set first, the above-described interference image is set. There is no need for readjustment of the optical system during the work, except for alignment on the image plane. According to the above, since the magnification and the like are recorded under the same conditions, it is possible to obtain a wide range of phase distribution images by performing the image arrangement as it is after the reproduction image calculation or the phase distribution integration processing.
- FIG. 5 shows an optical system apparatus and method for shifting the area of the interference image (8 + 31) by sequentially moving the propagation angle of the electron beam.
- 5A is the same as FIG. 2A, and the electron beam propagates symmetrically on the optical axis, and the sample region and the vacuum region arranged symmetrically across the optical axis 2 are uniformly electron beams.
- It shows a state in which an interference image (8 + 31) is created by irradiation and the reference wave region (Ref) and the observation region 3-1. That is, it is the state of the optical system during normal electron beam interference (electron beam holography) observation.
- FIG. 5B shows the deflection of the irradiation angle to the sample 3 by moving the light source 1 on the sample or the image 11 (crossover) of the light source by the irradiation optical system from the optical axis 2 to the right space in the figure. It shows the state of the optical system after the operation. Even when the irradiation electron beam is deflected, the position of the sample 3 and the sample image 31 does not move due to the imaging relationship, but the interference region is formed as a projection of the central microwire electrode 9, so that the irradiation electron beam Move with deflection. The amount of movement is an amount necessary to record the interference image (8 + 31) between the observation region 3-1 and the observation region 3-2 on the image plane 71.
- the magnification and optical ratio of the optical system shown in FIG. Although it depends on the position (height on the optical axis) of the electron biprism in the system, it is usually on the order of submilliradians and is a sufficiently adjustable range.
- the electron beam is further deflected in the same direction, so that an interference image between the observation region 3-2 and the observation region 3-3 is obtained.
- the recording operation is sequentially repeated, and an observation area in a predetermined range is recorded as an interference image.
- the position on the image plane 71 where the interference image is formed also moves. For this movement, although drawing is omitted in FIG. Correction is performed using a magnifying lens system and a deflection system in the magnifying lens system (see FIG. 6).
- the method shown in the fourth embodiment can be carried out only by a deflection action to an electromagnetic electron beam without mechanical movement of the devices. Therefore, it is easy to obtain a mechanical stable state, and there is an advantage in improving the resolution in this method.
- Patent Document 1 since the interference region coincides with the sample position, it is difficult to realize Example 4.
- the operation of the optical system is accompanied during a series of interference image recording operations, but the deflection operation is the main and there is no change operation to the magnification. If optical conditions such as the observation recording magnification are set, it is not necessary to readjust the optical system during the work in the range where the deflection angle is within the paraxial approximation range. According to the above, since the magnification and the like are recorded under the same conditions, it is possible to obtain a wide range of phase distribution images by performing the image arrangement as it is after the reproduction image calculation or the phase distribution integration processing.
- the irradiation angle of the electron beam to the sample is deflected.
- the present invention is not limited to this.
- a deflection system may be inserted to deflect the propagation angle of the electron beam (see FIG. 6). In this case, since there is no change to the irradiation conditions for the sample, it is suitable for higher resolution than the above-described method.
- FIG. 6 shows an example of an electron beam interference apparatus that can implement the optical system shown in FIGS. 2, 4, and 5 and the method of FIG. That is, an electron biprism 90 is disposed below the objective lens 5, and an interference image obtained on the image plane of the objective lens is converted into a four-stage magnifying lens system (61, 62, 63, 64). Thus, it is an electron beam interferometer for magnifying and observing.
- the interference image 32 formed on the observation recording surface 89 is recorded by an image observation / recording medium 81 (for example, a TV camera or a CCD camera), and a phase distribution image reproduction process, a phase distribution image integration process, etc.
- the calculation result (arranged phase distribution image) 34 is displayed using the display device 88 or the like.
- the interference image 32 formed on the observation recording surface 89 is converted into an image observation / recording medium 81 (for example, a TV).
- the interference area width obtained at that time is analyzed by the control computer 51 to obtain an existing value.
- the deflection device 94 above the sample is controlled by the deflection system. This shows that the device deflects the electron beam through the device 44.
- the deflecting device 95 below the magnifying lens 64 is used to align the position of the interference image with the appropriate position of the observation / recording medium 81.
- the fine movement control mechanism that creates and records the interference image in which the observation area relating to the present application is shifted can achieve the purpose as long as any one of the fine movement control mechanisms is installed, but does not exclude the state of being provided side by side.
- FIG. 6 depicts an electron beam biprism 90 and enlarged imaging system lenses (61, 62, 63, 64), assuming a conventional 100 kV to 300 kV type electron microscope.
- the components of the electron microscope optical system are not limited to this figure.
- the actual apparatus includes a deflection system that changes the traveling direction of the electron beam, a diaphragm mechanism that limits the transmission region of the electron beam, and the like.
- devices other than those that have been drawn are omitted in this figure because they are not directly related to the present invention.
- the electron optical system is assembled in the vacuum vessel 18 and continuously exhausted by a vacuum pump, the vacuum exhaust system is also omitted because it is not directly related to the present invention. Such omission is the same in the following figures.
- the integration processing of the phase distribution image and its meaning in the present application have been described with reference to FIG.
- the basis of the idea is that, in interference image recording by two-wave interference, one of the recorded wavefronts (for example, the left wavefront in FIG. 2) is the other wavefront in the next interference image recording (for example, in FIG. 2).
- the wavefront on the right side which is canceled out during integration after the reproduction phase distribution is obtained as a difference.
- a description will be given below of a technique that more suitably exhibits the effect of the present invention when the projection width df of the central fine wire electrode onto the sample surface cannot be ignored.
- FIG. 7 depicts two wavefronts during two-wave interference. Wavefronts that have a relationship of interference are drawn vertically (in the vertical direction), and they are drawn right and left (in the horizontal direction) as if they were arranged according to the sample position.
- FIG. 7A shows a case where the size of the central fine wire electrode of the electron biprism can be ignored.
- the observation region 3-2 when performing measurement with the observation region 3-2 as the left wavefront and the observation region 3-1 as the right wavefront, the observation region 3-2 has the observation region 3-3 as the left wavefront, This shows that the wavefront is the same as that of the observation region 3-2 when performing measurement with 3-2 as the right wavefront.
- the phase distribution shifted for each width W of the interference area is integrated by the number of times corresponding to the order of each observation area. Then, a phase distribution image over a wide range can be obtained. That is, the order of integration processing and reproduction phase distribution image arrangement work is different from the first embodiment. However, the results obtained are the same.
- FIG. 7B illustrates two wavefronts in the case of two-wave interference when the size of the central ultrafine wire electrode of the electron biprism cannot be ignored.
- the relationship between the upper and lower wavefronts is the same as in FIG. 7A, but shows a state in which the position of the wavefront drawn on the lower side is shifted by the projection width df of the central wire electrode. Even if adjacent observation regions are arranged, this shift is not eliminated, indicating that the shift continues over the entire wavefront.
- This wavefront relationship is expressed by a mathematical expression where the x-axis is taken to the left as in FIG.
- Equation 20 The phase distribution function ⁇ (x) of the difference is expressed by Equation 20.
- Equation 22 the same handling as in Equation 19 is possible with W + df as one unit, taking into account the projection width df of the center fine wire electrode, not the interference region width W. This is expressed in Equation 22.
- phase distribution image over a wide range can be obtained. That is, the order of integration processing and reproduction phase distribution image arrangement work is different from that of the first embodiment. However, the point that a reproduction phase distribution image is obtained as a result is the same.
- the primary reproduction phase distribution obtained at this time is the difference between the phase distributions of adjacent regions across the center microwire electrode, and the phase distribution image of a wide field of view is obtained by arranging these phase distributions.
- This is an image representing the spatial variation of the phase distribution.
- the magnetic field line distribution shown in FIG. 3B the magnetic field line distribution excluding the average magnetic field line distribution around the MFM probe is displayed.
- Example 1 and FIG. 1 or FIG. 7A corresponds to the case where the projected width df of the central fine wire electrode is zero. Therefore, if the projected width df of the center wire electrode is negligibly small compared to the interference region, or if the phase distribution changes slowly and does not change sharply within the width df, it is approximate.
- the phase distribution can be reproduced by the method shown in the first embodiment and FIG. 1 or FIG.
- FIG. 8 shows a state in which when creating an interference image of adjacent observation regions, an interference image is created by adding the projection width df of the central fine wire electrode instead of the interference region width W and moving it by W + df. .
- one of the recorded wavefronts for example, the left wavefront in FIG. 11
- the other wavefront for example, the right wavefront in FIG. 11
- a missing region of information is generated between the wavefronts obtained from the interference images by the projection width df of the central wire electrode.
- the reproduction accuracy is deteriorated as compared with the previous embodiment 6, the burden on the image processing after the experiment is small, and the projection width df of the center fine wire electrode affects the entire image information as compared with the interference region width W.
- This is an effective technique when the phase distribution is so small that the phase distribution is not given, or when the phase distribution changes slowly and does not change sharply within the range of the width df. Also in this case, the relationship of coherent distance R> W + df must be satisfied.
- Example 7 As in Example 7, another method for handling when the projection width df of the central fine wire electrode on the sample surface cannot be ignored will be described with reference to FIG.
- FIG. 9 shows an adjustment of the voltage applied to the central fine wire electrode so that the projection width df of the central fine wire electrode and the interference region width W coincide when creating an interference image of adjacent observation regions.
- a state in which an interference image is created by shifting the observation region by the interference region width W is shown.
- recording was performed between a certain observation region and a phase distribution from a region separated by one region (for example, observation region 3-1 and observation region 3-3).
- one of the wavefronts for example, the left wavefront in FIG. 11
- the other wavefront for example, the right wavefront in FIG. 11
- the projection width df of the center fine wire electrode coincides with the interference region width W
- the projection width df of the center fine wire electrode is an integral multiple (N times) of the interference region width W. Can be easily extended to the same handling, simply by increasing the number of areas jumped between the recorded areas.
- the condition that must be satisfied in this case is coherence distance R> NW.
- ⁇ ch is the phase distribution due to the charge-up generated at the center wire electrode of the electron biprism. This is a phase distribution that does not depend on the object wave and the reference wave and always occurs in the same manner when an interference image is recorded and reproduced. Strictly speaking, depending on whether the charge-up occurrence position on the center wire electrode is the object wave side or the reference wave side, the term on the subtracted side or the term on the subtracting side of the phase distribution of the difference differs as a result. Since only the distribution after the difference is detected, the phase distribution after the difference is ⁇ ch. Then, for example, the phase distribution of the nth observation region (n) and the n ⁇ 1th observation region (n ⁇ 1) is expressed by Equation 30, and the phase distribution of the reference hologram is expressed by Equation 31.
- Equation 14 This is the same as equation 14. In other words, if ⁇ ′n in Equation 32 is replaced with ⁇ n in Equation 13, all of the techniques of the present application described so far can be implemented. Note that the experimental example shown in FIG. 3 was performed using a reference hologram.
- the phase distribution image reproduced from the interference image is integrated to enable holographic observation of a predetermined portion of the sample. Therefore, the electron beam interferometry is released from the condition that the observation region is limited to the vicinity of the reference wave, which is the most important and fundamental restriction of the electron beam interferometry in the prior art.
- Electron source or electron gun 11 ... Crossover, 18 ... Vacuum container, 19 ... Electron source control unit, 2 ... Optical axis, 21 ... Object wave, 23 ... Reference wave, 25 ... Wave front, 27 ... Electron beam Orbit, 3 ... sample, 31 ... sample image formed by objective lens, 32 ... sample image formed on observation / recording system, 34 ... arranged phase distribution image, 40 ... accelerator tube, 41 ... First irradiation lens 42... Second irradiation lens 44. Deflection device control unit installed in the irradiation system 45. Deflection device control unit installed in the imaging system 47. Second irradiation lens control unit 48 ...
- Control unit for first irradiation lens 49 ... Control unit for acceleration tube, 5 ... Objective lens, 51 ... Control system computer, 52 ... Monitor for control system computer, 53 ... Interface for control system computer, 59 ... Objective 61 ... first imaging lens, 62 ... second imaging lens, 63 ... third imaging lens, 64 ... fourth imaging lens, 66 ... fourth imaging lens control unit, 67 ... Control unit for third imaging lens, 68 ... Control unit for second imaging lens, 69 ... Control unit for first imaging lens, 7 ... Image plane, 71 ... Image plane of sample by objective lens, 8 ... Interference fringes 81 ... Image observation / recording medium, 82 ... Image observation / recording medium control unit, 885 ...
- Image arithmetic processing device 86 ... Image arithmetic processing device monitor, 87 ... Image arithmetic processing device interface, 88 ... Display device, 89 ... Observation / recording surface, 9 ... Electron biprism central fine wire electrode, 90 ... Electron biprism, 94 ... Deflection device installed in the irradiation system, 95 ... Deflection device installed in the imaging system, 99 ... Parallel plate grounding 3-1: First observation area, 3-2: Second observation area, 3-3: Third observation area, 3-4: Fourth observation area, 3-5: First 5th observation area, (n) ... nth observation area, (Ref) ... reference wave area
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Microscoopes, Condenser (AREA)
- Holo Graphy (AREA)
Abstract
Description
電子線バイプリズムは光学におけるフレネルの複プリズムと同じ作用をする電子光学系における装置で、電界型と磁界型の二種類がある。このうち、広く普及しているものは電界型電子線バイプリズムで、図10に示すような形状をしている。すなわち、中央部の極細線電極9とその電極を挟む形で保持される平行平板型接地電極99から構成される。例えば、中央極細線電極9に正電圧を印加すると、図10中に示したごとく、中央極細線電極9の近傍を通過する電子線は、中央極細線電極の電位により互いに向き合う方向に偏向される(電子線の軌道27参照)。図10中の電子軌道27に垂直に平面25が描かれているが、これは電子線を波として表現するときの等位相面であり、通常は電子軌道と垂直を成す面で一般的には波面と呼ばれる。
<干渉顕微鏡像の作成>
電子線ホログラフィに代表される最も一般的な電子線干渉計は、図11に示すごとく1段の電子線バイプリズム(9と99)を対物レンズ5と対物レンズ5による試料3の像面71との間に配置する1段電子線バイプリズム干渉計である。1段電子線バイプリズム干渉計では、中央極細線電極9に正の電圧を印加することによって、試料3を透過した電子線(物体波21:図11では中央極細線電極9の右側を通過する電子線)と試料の無い側を透過した電子線(参照波23:図11では中央極細線電極9の左側を通過する電子線)とを重畳させて干渉顕微鏡像(31と8:試料像31に干渉縞8の重畳された画像)を得ている。この物体波21と参照波23の重畳する範囲が干渉顕微鏡像であり、中央僕細線電極9の後方で、試料3の像面71上に幅Wで形成される。これを干渉領域幅と呼ぶ。
<可干渉距離>
フェルミ粒子である電子の波動は、ボーズ粒子である光子の波動と異なり、1つの状態に縮退させることができない。そのため、厳密な意味でのレーザーのような完全に可干渉(コヒーレント)な状態は作り出すことができず、加速電圧の安定性を高めてエネルギー分布幅を小さくするとともに光源サイズをできるだけ小さくして電子の運動の角度分布(電子線の開き角:β)を小さく押えて電子波(波長:λ)としての波面を広げる工夫をしている。この電子波が干渉可能な範囲を可干渉距離Rと呼び数1で表される。この距離は電子光学系に依存するが、磁場観察光学系の場合には、試料面上では1μm程度が一般的な値である。
<二波干渉>
可干渉距離の範囲内にある2つの波動場(ΦA、ΦB)の干渉について考える。厳密には部分可干渉な取り扱いを要するが、表示の便宜上、完全可干渉として取り扱う。振幅分布をそれぞれφA(x,y)、φB(x,y)、位相分布をηA(x,y)、ηB(x,y)とするとき、数3、数4で表される波動が干渉によって作り出す強度分布I(x,y)は、数5、数6で表される。
<電子線ホログラフィ>
電子線ホログラフィも一般的に二波干渉による計測手法であり、上記二波の内、片方が物体波φObj(x,y)exp[iηObj(x,y)]、他方が平面波など既知の参照波exp[iηRef(x,y)]であるところに特徴がある。すなわち、ホログラフィとは一般的に、既知の参照波を基準として物体波を計測する手法である。電子線ホログラフィの場合、図10に示したように電子線バイプリズムを用いて干渉させるため、参照波は光軸に対して傾斜した平面波と考えることができる。簡単のため、物体波は光軸と平行に伝播し、参照波のみx軸方向に角度αだけ傾斜して伝播するとして表式すると、物体波、参照波、ホログラム(干渉顕微鏡像)としての干渉強度分布は、以下の数7、数8、数9で表される。なお、数8におけるR0xは搬送空間周波数である。
(1)参照波の領域(Ref)(位相分布:ηRef(x,y))と試料中の観察領域3-1(位相分布:η1(x,y))との干渉像(ホログラム)を記録し、ホログラフィ技術により再生(演算処理)する。このとき、再生の手法は問わない、例えば、フーリエ変換法でもよいし位相シフト法でもよい。得られる再生位相分布像は、数10で表される2つの波動の位相分布の差分Δη1(x,y)である。
(i)試料を移動する、(ii)電子線バイプリズムを移動する、(iii)電子線の伝播角度を傾斜する、といった3つの方法がある。それぞれ特徴があるが、最も簡便にて効果を発揮する方法は(i)の試料を移動する方法である。
Claims (14)
- 電子線の光源と、
前記光源から放出される電子線を試料に照射するための照射光学系と、
前記試料の像を結像する対物レンズを有する結像レンズ系と、
前記電子線の光軸上に配置された電子線バイプリズムと、
前記試料における複数の位相分布像を記録する画像記録装置と、
前記試料の位相分布像を演算する画像演算処理装置と、を有し、
前記試料は前記電子線バイプリズムにより参照波領域を透過する電子線と干渉した電子線が透過する第1の観察領域と、前記電子線バイプリズムにより前記第1の観察領域を透過する電子線と干渉した電子線が透過する第2の観察領域と、を有し、
前記画像記録装置は、前記参照波領域を透過した電子線と前記第1の観察領域を透過した電子線とに基づき第1の干渉像を記録し、かつ、前記第1の観察領域を透過した電子線と前記第2の観察領域を透過した電子線とに基づき第2の干渉像を記録し、
前記画像演算処理装置は、前記画像記録装置に記録された前記第2の干渉像と前記画像記録装置に記録された前記第1の干渉像とに基づき、前記参照波領域を透過した電子線と前記第2の観察領域を透過した電子線との位相分布像を演算する
ことを特徴とする電子線干渉装置。 - 請求項1において、前記画像演算処理装置は、
前記参照波領域を透過した電子線と前記第1の観察領域を透過した電子線とに基づき、前記第1の干渉像から第1の位相分布像を演算し、
前記第1の観察領域を透過した電子線と前記第2の観察領域を透過した電子線とに基づき、前記第2の干渉像から第2の位相分布像を演算し、
前記第1の位相分布像と前記第2の位相分布像との和を求めることで、前記参照波領域を透過した電子線と前記第2の観察領域を透過した電子線との位相分布像を演算する
ことを特徴とする電子線干渉装置。 - 請求項1において、
前記電子線が照射する試料を保持するための試料保持装置をさらに有し、
前記第1の干渉像及び前記第2の干渉像を記録する際に、前記試料保持装置は、前記光軸に対して垂直方向でかつ、前記前記電子線バイプリズムの投影像の長手方向と垂直方向へ前記試料を移動させる
ことを特徴とする電子線干渉装置。 - 請求項1において、
前記電子線バイプリズムの位置を移動するバイプリズム移動手段をさらに有し、
前記第1の干渉像及び前記第2の干渉像を記録する際に、前記バイプリズム移動手段は、前記光軸に対して垂直な方向へ前記電子線バイプリズムを移動させる
ことを特徴とする電子線干渉装置。 - 請求項1において、
前記第1の干渉像及び前記第2の干渉像を記録する際に、前記照射光学系は、前記電子線が前記光軸となす伝播角度を変更する
ことを特徴とする電子線干渉装置。 - 請求項1から5のいずれかにおいて、
前記演算された位相分布像を、前記演算された位相分布像の元となった干渉像が記録された順に配列させて表示する画像表示装置をさらに有する
ことを特徴とする電子線干渉装置。 - 電子線の光源と、
前記光源から放出される電子線を試料に照射するための照射光学系と、
前記試料の像を結像する対物レンズを有する結像レンズ系と、
前記電子線の光軸上に配置された電子線バイプリズムと、
前記試料における複数の干渉像を記録する画像記録装置と、
前記試料の位相分布像を演算する画像演算処理装置と、を有し、
前記電子線バイプリズムにより参照波領域を透過する電子線と干渉した電子線が透過した第1の観察領域と、前記参照波領域を透過した電子線と、に基づき第1の干渉像を記録する第1ステップと、
前記電子線バイプリズムにより前記第2の観察領域を透過する電子線と干渉した電子線が透過した第2の観察領域と、前記第1の観察領域を透過した電子線と、に基づき第2の干渉像を記録する第2ステップと、
前記第2の干渉像と前記第1の干渉像とに基づき、前記参照波領域を透過した電子線と前記第2の観察領域を透過した電子線との位相分布像を演算する第3ステップとを有する電子線干渉法。 - 請求項7において、
前記第3ステップは、前記第1の干渉像に基づき、前記参照波領域を透過した電子線と前記第1の観察領域を透過した電子線との第1の位相分布像を演算する第4ステップと、前記第2の干渉像に基づき、前記第1の観察領域を透過した電子線と前記第2の観察領域を透過した電子線との第2の位相分布像を演算する第5ステップと、前記第1の位相分布像と前記第2の位相分布像とを加算することで、前記参照波領域を透過した電子線と前記第2の観察領域を透過した電子線との位相分布像を演算する第6ステップと、を有する電子線干渉法。 - 請求項7において、
前記演算された位相分布像を、前記演算された位相分布像の元となった干渉像が記録された順に配列して表示する第7ステップとを有する電子線干渉法。 - 電子線の光源と、
前記光源から放出される電子線を試料に照射するための照射光学系と、
前記試料の像を結像する対物レンズを有する結像レンズ系と、
前記電子線の光軸上に配置された電子線バイプリズムと、
前記試料における複数の干渉像を記録する画像記録装置と、
前記試料の位相分布像を演算する画像演算処理装置と、を有し、
前記電子線バイプリズムにより参照波領域を透過する電子線と干渉した電子線が透過する第1の観察領域と、前記参照波領域を透過した電子線と、に基づき第1の干渉像を記録する第1ステップと、
前記電子線バイプリズムにより前記第2の観察領域を透過する電子線と干渉した電子線が透過する第2の観察領域を透過した電子線と、前記第1の観察領域を透過した電子線と、に基づき第2の干渉像を記録する第2ステップと、
前記第1の干渉像に基づき、前記参照波領域を透過した電子線と前記第1の観察領域を透過した電子線との第1の位相分布像を演算する第3ステップと、
前記第2の干渉像に基づき、前記第1の観察領域を透過した電子線と前記第2の観察領域を透過した電子線との第2の位相分布像を演算する第4ステップと、
前記演算された第1及び第2の位相分布像を、前記演算された位相分布像の元となった干渉像が記録された順に配列して表示する第5ステップと、
を有する電子線干渉法。 - 請求項10において、
前記配列された位相分布像を、前記電子線バイプリズムの投影像の長手方向と垂直方向に所定の量移動させ第1の補正位相分布像とする第6ステップと、
前記配列された位相分布像と前記第1の補正位相分布像とを加算することで、前記参照波領域を透過した電子線と前記第2の観察領域を透過した電子線との位相分布像を演算する第7ステップと、
を有する電子線干渉法。 - 請求項11において、
前記所定の量は干渉領域幅であることを特徴とする電子線干渉法。 - 請求項11において、
前記所定の量は干渉領域幅と前記電子線バイプリズムの中央極細線電極の投影幅の和であることを特徴とする電子線干渉法。 - 請求項11において、
前記所定の量は干渉領域幅の整数倍であることを特徴とする電子線干渉法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/810,934 US8946628B2 (en) | 2012-02-03 | 2012-02-03 | Electron beam interference device and electron beam interferometry |
DE112012000116T DE112012000116T5 (de) | 2012-02-03 | 2012-02-03 | Elektronenstrahl-Interferenzvorrichtung und Elektronenstrahl-Interferometrie |
PCT/JP2012/000724 WO2013114464A1 (ja) | 2012-02-03 | 2012-02-03 | 電子線干渉装置および電子線干渉法 |
JP2013556034A JP5648136B2 (ja) | 2012-02-03 | 2012-02-03 | 電子線干渉装置および電子線干渉法 |
CN201280002178.9A CN103348440B (zh) | 2012-02-03 | 2012-02-03 | 电子射线干涉装置和电子射线干涉法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/000724 WO2013114464A1 (ja) | 2012-02-03 | 2012-02-03 | 電子線干渉装置および電子線干渉法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013114464A1 true WO2013114464A1 (ja) | 2013-08-08 |
Family
ID=48904554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/000724 WO2013114464A1 (ja) | 2012-02-03 | 2012-02-03 | 電子線干渉装置および電子線干渉法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8946628B2 (ja) |
JP (1) | JP5648136B2 (ja) |
CN (1) | CN103348440B (ja) |
DE (1) | DE112012000116T5 (ja) |
WO (1) | WO2013114464A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017022093A1 (ja) * | 2015-08-05 | 2017-02-09 | 株式会社日立製作所 | 電子線干渉装置および電子線干渉方法 |
WO2021256212A1 (ja) * | 2020-06-18 | 2021-12-23 | 国立研究開発法人理化学研究所 | 電子顕微鏡解析システム |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6433550B1 (ja) * | 2017-07-19 | 2018-12-05 | 株式会社日立製作所 | 試料保持機構、及び荷電粒子線装置 |
US11340293B2 (en) | 2019-10-01 | 2022-05-24 | Pdf Solutions, Inc. | Methods for performing a non-contact electrical measurement on a cell, chip, wafer, die, or logic block |
US11328899B2 (en) | 2019-10-01 | 2022-05-10 | Pdf Solutions, Inc. | Methods for aligning a particle beam and performing a non-contact electrical measurement on a cell using a registration cell |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02298983A (ja) * | 1989-05-12 | 1990-12-11 | Res Dev Corp Of Japan | 電子線または荷電粒子線を用いた2光束イメージホログラムの実時間再生装置 |
JP2005294085A (ja) * | 2004-04-01 | 2005-10-20 | Hitachi Ltd | 走査電子線干渉装置 |
JP2006318734A (ja) * | 2005-05-12 | 2006-11-24 | Institute Of Physical & Chemical Research | 荷電粒子線装置 |
JP2006331652A (ja) * | 2005-05-23 | 2006-12-07 | Hitachi Ltd | 透過型干渉電子顕微鏡 |
JP2010198985A (ja) * | 2009-02-26 | 2010-09-09 | Hitachi Ltd | 電子線干渉装置、および電子線干渉顕微方法 |
WO2011071015A1 (ja) * | 2009-12-11 | 2011-06-16 | 株式会社日立製作所 | 電子線バイプリズム装置および電子線装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1428610A (zh) * | 2002-12-20 | 2003-07-09 | 中国科学院上海光学精密机械研究所 | 极弱微电场及其荷电量的测试方法 |
JP4512180B2 (ja) | 2004-01-09 | 2010-07-28 | 独立行政法人理化学研究所 | 干渉装置 |
-
2012
- 2012-02-03 DE DE112012000116T patent/DE112012000116T5/de not_active Withdrawn
- 2012-02-03 US US13/810,934 patent/US8946628B2/en not_active Expired - Fee Related
- 2012-02-03 CN CN201280002178.9A patent/CN103348440B/zh not_active Expired - Fee Related
- 2012-02-03 JP JP2013556034A patent/JP5648136B2/ja not_active Expired - Fee Related
- 2012-02-03 WO PCT/JP2012/000724 patent/WO2013114464A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02298983A (ja) * | 1989-05-12 | 1990-12-11 | Res Dev Corp Of Japan | 電子線または荷電粒子線を用いた2光束イメージホログラムの実時間再生装置 |
JP2005294085A (ja) * | 2004-04-01 | 2005-10-20 | Hitachi Ltd | 走査電子線干渉装置 |
JP2006318734A (ja) * | 2005-05-12 | 2006-11-24 | Institute Of Physical & Chemical Research | 荷電粒子線装置 |
JP2006331652A (ja) * | 2005-05-23 | 2006-12-07 | Hitachi Ltd | 透過型干渉電子顕微鏡 |
JP2010198985A (ja) * | 2009-02-26 | 2010-09-09 | Hitachi Ltd | 電子線干渉装置、および電子線干渉顕微方法 |
WO2011071015A1 (ja) * | 2009-12-11 | 2011-06-16 | 株式会社日立製作所 | 電子線バイプリズム装置および電子線装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017022093A1 (ja) * | 2015-08-05 | 2017-02-09 | 株式会社日立製作所 | 電子線干渉装置および電子線干渉方法 |
JPWO2017022093A1 (ja) * | 2015-08-05 | 2018-05-10 | 株式会社日立製作所 | 電子線干渉装置および電子線干渉方法 |
DE112015006775T5 (de) | 2015-08-05 | 2018-05-24 | Hitachi, Ltd. | Elektroneninterferenzvorrichtung und Elektroneninterferenzverfahren |
DE112015006775B4 (de) | 2015-08-05 | 2022-03-31 | Hitachi, Ltd. | Elektroneninterferenzvorrichtung und Elektroneninterferenzverfahren |
WO2021256212A1 (ja) * | 2020-06-18 | 2021-12-23 | 国立研究開発法人理化学研究所 | 電子顕微鏡解析システム |
Also Published As
Publication number | Publication date |
---|---|
US8946628B2 (en) | 2015-02-03 |
CN103348440B (zh) | 2016-01-20 |
JPWO2013114464A1 (ja) | 2015-05-11 |
CN103348440A (zh) | 2013-10-09 |
JP5648136B2 (ja) | 2015-01-07 |
DE112012000116T5 (de) | 2013-12-24 |
US20140332684A1 (en) | 2014-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7538323B2 (en) | Interferometer | |
JP5648136B2 (ja) | 電子線干渉装置および電子線干渉法 | |
JP5420678B2 (ja) | 電子線バイプリズム装置および電子線装置 | |
JP4523448B2 (ja) | 荷電粒子線装置および干渉装置 | |
US20080302965A1 (en) | Electron Interferometer or Electron Microscope | |
JP5736461B2 (ja) | 電子顕微鏡および試料観察方法 | |
JP5934965B2 (ja) | 電子線装置 | |
JP4852249B2 (ja) | 荷電粒子線装置および干渉装置 | |
JP5382695B2 (ja) | 電子線干渉装置、および電子線干渉顕微方法 | |
US20230003672A1 (en) | Electron diffraction holography | |
JP6051596B2 (ja) | 干渉電子顕微鏡 | |
JP7244829B2 (ja) | 干渉電子顕微鏡 | |
JP2011249191A (ja) | 透過型干渉顕微鏡 | |
JP5970648B2 (ja) | 透過型電子顕微鏡及び電子線干渉法 | |
JP6487556B2 (ja) | 電子線干渉装置および電子線干渉方法 | |
US10770264B2 (en) | Interference optical system unit, charged particle beam interference apparatus, and method for observing charged particle beam interference image | |
Völkl et al. | Principles and theory of electron holography | |
JP4797072B2 (ja) | 電子線バイプリズムを用いた電子線装置および電子線バイプリズムを用いた電子線装置における浮遊磁場測定方法 | |
Reu et al. | Doppler Electron Holography for Nanoscale Dynamics. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 13810934 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 112012000116 Country of ref document: DE Ref document number: 1120120001168 Country of ref document: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12867262 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013556034 Country of ref document: JP Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12867262 Country of ref document: EP Kind code of ref document: A1 |