WO2013099894A1 - Substrate processing device and substrate processing method using same - Google Patents

Substrate processing device and substrate processing method using same Download PDF

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Publication number
WO2013099894A1
WO2013099894A1 PCT/JP2012/083559 JP2012083559W WO2013099894A1 WO 2013099894 A1 WO2013099894 A1 WO 2013099894A1 JP 2012083559 W JP2012083559 W JP 2012083559W WO 2013099894 A1 WO2013099894 A1 WO 2013099894A1
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Prior art keywords
reaction tube
substrate
gas
processing
glass substrate
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PCT/JP2012/083559
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French (fr)
Japanese (ja)
Inventor
吉田秀成
国井泰夫
西谷英輔
平野光浩
谷山智志
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株式会社日立国際電気
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Application filed by 株式会社日立国際電気 filed Critical 株式会社日立国際電気
Priority to CN201280065144.4A priority Critical patent/CN104160480A/en
Priority to KR1020147014504A priority patent/KR20140085584A/en
Publication of WO2013099894A1 publication Critical patent/WO2013099894A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly to a technique effective when applied to shortening the processing time of a substrate.
  • a selenide-based CIS (chalcopyrite) solar cell has a structure in which a glass substrate, a metal back electrode layer, a CIS-based light absorption layer, a high-resistance buffer layer, and a window layer are sequentially stacked.
  • the CIS light absorption layer is formed by selenizing any one of the laminated structures of copper (Cu) / gallium (Ga), Cu / indium (In), or Cu—Ga / In.
  • the selenide CIS solar cell can be formed without using silicon (Si), the substrate can be made thin and the manufacturing cost can be reduced.
  • Patent Document 1 Japanese Patent Laid-Open No. 2006-186114.
  • a long axis direction of a cylindrical quartz chamber is formed by providing a plurality of flat objects (substrates) with a fixed interval by a holder.
  • the object is selenized by arranging the plate surface in parallel with the (longitudinal direction) and introducing a selenium source.
  • a fan to the end of the cylindrical quartz chamber in the axial direction, the gas containing the selenization source in the quartz chamber can be forced to convection and the temperature distribution on the glass substrate can be made uniform.
  • the glass substrate has a low thermal conductivity, it is difficult to heat the glass substrate in a short time while maintaining the temperature of the glass substrate uniformly by heat conduction or radiation from the outside of the plurality of glass substrates in the holder.
  • the present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of increasing the heating efficiency of the substrate in the substrate processing.
  • a substrate processing apparatus includes a reaction tube, a fan for forcibly convectioning the atmosphere inside the reaction tube along the surface of the substrate, and a surface of the substrate disposed at an outermost position among the plurality of substrates. And a rectifying plate that controls the processing gas flowing toward the fan outside the plurality of substrates so as to flow along the inner peripheral surface of the reaction tube.
  • the substrate processing method according to the present invention is directed to the fan outside the plurality of substrates by a rectifying plate that covers the surface of the substrate disposed at the outermost position among the plurality of substrates inside the reaction tube.
  • the film forming process is performed by controlling the flowing process gas to flow along the inner peripheral surface of the reaction tube.
  • the substrate heating time can be shortened.
  • FIG. 3 is an enlarged partial cross-sectional view showing the structure of part A in FIG. 2. It is sectional drawing which shows an example of the structure of the coating film of the reaction tube of the substrate processing apparatus shown in FIG. It is sectional drawing which shows an example of the structure of the principal part of the substrate processing apparatus of Embodiment 2 of this invention. It is sectional drawing which shows an example of the structure of the circumferential direction of the substrate processing apparatus shown in FIG. It is an expanded partial sectional view which shows the structure of the B section of FIG. It is a simulation result figure which shows an example of the effect by the substrate processing apparatus of Embodiment 2 of this invention. It is sectional drawing which shows the structure of the principal part of the substrate processing apparatus of the modification in Embodiment 2 of this invention.
  • the constituent elements are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.
  • FIG. 1 is a cross-sectional view showing an example of the structure of a main part of a substrate processing apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view showing an example of the structure in the circumferential direction of the substrate processing apparatus shown in FIG. 3 is an enlarged partial sectional view showing the structure of part A of FIG. 2, and
  • FIG. 4 is a sectional view showing an example of the structure of the coating film of the reaction tube of the substrate processing apparatus shown in FIG.
  • the substrate processing apparatus performs a heat treatment on a substrate such as a glass substrate, and includes a processing furnace 10 which is a main part shown in FIG.
  • a processing chamber (also referred to as a reaction chamber) 30 in which a heat treatment such as a film forming process is performed on a substrate is hermetically configured by a reaction tube 100 and a seal cap (lid) 110, and a plurality of glass substrates 20 are included therein. Is placed on the installation table 420 in a state of being stored in a cassette (also referred to as a boat) 410.
  • the reaction tube 100 has a structure that is heated by a heating unit (heater) such as a furnace body heating unit 200 and a cap heating unit 210 provided in the surroundings, and the material of the reaction tube 100 is corrosive.
  • a heating unit such as a furnace body heating unit 200 and a cap heating unit 210 provided in the surroundings, and the material of the reaction tube 100 is corrosive.
  • a metal having high corrosion resistance that can withstand gas or a metal having a corrosion-resistant coating on its surface is used.
  • an electric fan 500 is provided on one side of the reaction tube 100 that is closed, and a power unit (fan driving unit) 530 provided outside the processing chamber 30. Therefore, the gas in the processing chamber 30 can be agitated by rotating the wing (fan) 510.
  • the reaction tube 100 is connected to a gas introduction unit for processing the glass substrate 20, an exhaust port for replacing the gas inside the processing chamber 30, and an exhaust device for exhausting the gas from the exhaust port.
  • An exhaust pipe, an introduction part of an inert gas such as nitrogen, and the like are provided.
  • the processing furnace 10 has a reaction tube 100 as a furnace body made of a metal material such as stainless steel.
  • the reaction tube 100 has a hollow cylindrical shape (tubular shape), and has a structure in which one end is closed and the other end is opened.
  • a processing chamber 30 is formed by the hollow portion of the reaction tube 100.
  • a cylindrical manifold 120 having both ends opened concentrically with the reaction tube 100 is provided.
  • An O-ring (not shown) as a seal member is provided between the reaction tube 100 and the manifold 120.
  • a movable seal cap 110 is provided in the opening portion of the manifold 120 where the reaction tube 100 is not provided.
  • the seal cap 110 is formed of a metal material such as stainless steel and has a convex shape in which a part thereof is inserted into the opening of the manifold 120.
  • An O-ring (not shown) as a seal member is provided between the movable seal cap 110 and the manifold 120. When performing processing, the seal cap 110 seals the opening side of the reaction tube 100 in an airtight manner. Block.
  • a plurality of glass substrates (for example, 30 to 60 sheets) 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are provided inside the reaction tube 100.
  • An installation table 420 for placing the cassette 410 to be held is provided inside the reaction tube 100.
  • the installation table 420 is configured such that one end thereof is fixed to the inner peripheral surface 100 a of the reaction tube 100 and the cassette 410 is mounted on the center of the reaction tube 100 via the installation table 420.
  • the cassette 410 is a holding member that can hold the glass substrates 20 side by side in a state in which the plurality of glass substrates 20 stand on both ends of the glass substrate 20.
  • the plate of the side surface portion C is only the frame 410a as much as possible (the plate of the side surface portion C is, for example, a frame shape) so as not to disturb the gas flow of the airflow P.
  • the gas flowing through the plate 430 is easy to flow.
  • each glass substrate 20 is supported by the groove
  • a furnace body heating unit 200 which is a heating unit having a hollow cylindrical shape with one end closed and the other end opened.
  • a cap heating unit 210 is provided on the side surface (outside) of the seal cap 110 opposite to the reaction tube 100.
  • the interior of the furnace body heating unit 200 and the cap heating unit 210 are heated through the reaction tube 100, that is, the inside of the processing chamber 30.
  • the furnace heating unit 200 is fixed to the reaction tube 100 by a fixing unit (not shown), and the cap heating unit 210 is fixed to the seal cap 110 by a fixing unit (not shown).
  • the seal cap 110 and the manifold 120 are provided with a cooling means (not shown) for water cooling in order to protect the O-ring having low heat resistance.
  • the manifold 120 is provided with a gas supply pipe 300 for supplying selenium hydride (hereinafter referred to as “H 2 Se”) as a selenium element-containing gas (selenization source, process gas 600).
  • H 2 Se selenium hydride
  • the H 2 Se supplied from the gas supply pipe 300 is supplied (introduced) from the gas supply pipe 300 through the gap between the manifold 120 and the seal cap 110.
  • an exhaust pipe 310 is provided in the manifold 120 on the opposite side of the gas supply pipe 300, and the atmosphere in the processing chamber 30 is from the exhaust pipe 310 through a gap between the manifold 120 and the seal cap 110. Exhausted. It should be noted that when the portion cooled by the above-described cooling means is cooled to 150 ° C. or lower, unreacted selenium is condensed in that portion, so the temperature is preferably controlled from 150 ° C. to about 170 ° C.
  • an electric fan 500 is provided inside the reaction tube 100 of the first embodiment. That is, the electric fan 500 is provided on one end side of the reaction tube 100 that is closed, and the electric fan 500 can be driven to forcibly convection the atmosphere inside the reaction tube 100 along the surface of the glass substrate 20.
  • the electric fan 500 rotates to provide a wing portion 510 that forms convection in the processing chamber 30, and a rotating shaft portion provided so as to penetrate the side wall of the cylindrical reaction tube 100 and the side wall of the furnace body heating unit 200.
  • 520 and a power unit 530 that is provided outside the furnace body heating unit 200 and rotates the rotating shaft unit 520.
  • a protective member 540 is provided between the rotary shaft portion 520 and the reaction tube 100 and the furnace body heating portion 200, and a nitrogen purge is performed in a narrow gap between the protective member 540 and the rotary shaft portion 520. This prevents the reaction gas (processing gas 600) from entering the power unit 530 from the rotating shaft unit 520 as much as possible.
  • the rotation of the electric fan 500 forms an air flow P of the processing gas 600 that flows along the long side direction of the glass substrate 20 (longitudinal direction of the cylindrical reaction tube 100) in the processing chamber 30. In this way, the electric fan 500 is operated so that forced convection is directed in the long side direction of the glass substrate 20.
  • a cylindrical rectifying plate 430 is provided in the processing chamber 30.
  • the rectifying plate 430 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and both ends are open. It has a shape. That is, a cylindrical rectifying plate 430 is provided so as to cover a plurality of glass substrates 20 arranged upright on the cassette 410, and gas can pass through both ends of the cylindrical rectifying plate 430. Is open.
  • the rectifying plate 430 is connected to the rectifying plate 430 through one opening of the cylindrical rectifying plate 430 from the wing portion 510 of the electric fan 500 attached to the wall of the inner peripheral surface 100a of the reaction tube 100 that is closed in the longitudinal direction.
  • An airflow can be sent into the interior, and an airflow can be sent out of the rectifying plate 430 from the opening on the other side.
  • the rectifying plate 430 is attached to the inner peripheral surface 100a of the reaction tube 100.
  • the rectifying plate 430 includes an air flow P that flows along the glass substrate 20 by forced convection formed by the rotation of the blades 510 by driving the electric fan 500, and the air flow P is sealed cap 110.
  • the air flow Q of the processing gas 600 that flows toward the wings 510 of the electric fan 500 is separated from the outside of the plurality of glass substrates 20. That is, the rectifying plate 430 is directed toward the wing 510 of the electric fan 500 after the air flow P flowing along the glass substrate 20 formed by the rotation of the wing 510 and the air flow P collides with the inner wall of the seal cap 110.
  • the air flow Q flowing toward the wing 510 is controlled so as to flow along the inner peripheral surface 100a of the reaction tube 100.
  • the airflow P of the processing gas 600 flowing along the surface of the glass substrate 20 by the forced convection formed by driving the electric fan 500 exits from the rectifying plate 430 and is then sealed.
  • the rectifying plate 430 causes the flow of the processing gas 600 to reach the inner wall of the cap 110 and then flow along the inner peripheral surface 100a of the reaction tube 100 in the region outside the rectifying plate 430 in the region outside the rectifying plate 430. I have control.
  • the flow of the processing gas 600 during the processing of the glass substrate 20 in the processing chamber 30 can be stably circulated.
  • the flow path of the processing gas 600 flowing toward the wing portion 510 of the electric fan 500 can be changed within the reaction tube 100. Therefore, the processing gas 600 flowing toward the wing portion 510 can be controlled to flow along the inner peripheral surface 100a of the heated reaction tube 100. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
  • the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
  • the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100 a of the reaction tube 100.
  • the unevenness 103 is formed over substantially the entire inner peripheral surface 100a of the reaction tube 100 (for example, the inner peripheral surface 100a through which the processing gas 600 passes).
  • the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100 can be increased. .
  • the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
  • the reaction tube 100 of the processing furnace 10 of the first embodiment is made of a metal material such as stainless steel.
  • Metal materials such as stainless steel are easier to process than quartz. Therefore, it is possible to easily manufacture a large reaction tube 100 used in a substrate processing apparatus that performs selenization processing of CIS (chalcopyrite) solar cells. Therefore, the number of glass substrates 20 that can be accommodated in the reaction tube 100 can be increased, and the manufacturing cost of the CIS solar cell can be reduced.
  • the surface (inner peripheral surface 100a) exposed to at least the atmosphere in the processing chamber 30 of the reaction tube 100 is the base material 101 of the reaction tube 100 of FIG. 1, as shown in FIG.
  • a coating film 102 having higher selenization resistance than a metal material such as stainless steel is formed on a metal material such as stainless steel.
  • a metal material such as stainless steel which is widely used, is corroded due to extremely high reactivity when a gas such as H 2 Se is heated to 200 ° C. or more.
  • a gas such as H 2 Se is heated to 200 ° C. or more.
  • a coating film 102 containing ceramic as a main component for example, chromium oxide (Cr x O y : x, y is an arbitrary number of 1 or more), alumina (Al x O y : x, y is an arbitrary number of 1 or more), silica (Si x O y : x, y is an arbitrary number of 1 or more), respectively, or a coating film 102 containing carbon as a main component, for example, Examples thereof include silicon carbide (SiC) and diamond-like carbon (DLC).
  • SiC silicon carbide
  • DLC diamond-like carbon
  • the coating film 102 of the first embodiment is formed of a porous film.
  • the coating film 102 is desirably formed to a thickness of 2 to 200 ⁇ m, preferably 50 to 120 ⁇ m.
  • the deviation of the linear expansion coefficient between the substrate 101 and the coating film 102 is 20% or less, preferably 5% or less.
  • the above-described coating film 102 may be formed on the seal cap 110, the manifold 120, the gas supply pipe 300, and the exhaust pipe 310 in the same manner at portions exposed to the selenization source. However, since the portion cooled to 200 ° C. or less by the cooling means to protect the O-ring or the like does not react even when a metal material such as stainless steel comes into contact with the selenization source, the coating film 102 is not formed. Also good.
  • FIGS. 1 and 2 an example of a substrate processing apparatus including a processing furnace 10 having a cylindrical reaction tube 100 provided with an electric fan 500 on one side portion closed inside is shown.
  • the case where the selenization process is performed in a manufacturing process of a CIGS (C: Cu (Copper), I: ln (lndium), G: Ga (Gallium), S: Se (Selenium)) solar cell will be described.
  • each glass substrate 20 is arrange
  • the cassette 410 is carried into the processing chamber 30 by, for example, moving the cassette 410 into the processing chamber 30 with the lower portion of the cassette 410 supported and lifted by an arm of a loading / unloading device (not shown). After reaching the position, the arm is moved downward and the cassette 410 is placed on the installation table 420.
  • the seal cap 110 is closed to make the processing chamber 30 sealed, and the atmosphere inside the processing chamber 30 is replaced with an inert gas (processing gas 600) such as nitrogen gas (replacement step).
  • processing gas 600 such as nitrogen gas
  • replacement step After substituting the atmosphere in the processing chamber 30 with the inert gas, power is supplied to a heater such as the furnace body heating unit 200 and the reaction tube 100 is heated at a predetermined temperature increase rate. For example, the temperature is raised to 400 to 550 ° C., preferably 450 to 550 ° C. at 3 to 15 ° C. per minute.
  • the blades 510 of the electric fan 500 are rotated by the power unit 530, and a plurality of processing gases (inert gases) 600 heated in the vicinity of the inner peripheral surface 100 a of the reaction tube 100 are accommodated in the cassette 410.
  • the glass substrate 20 is heated by passing through the glass substrate 20 along the long side direction (longitudinal direction) of each glass substrate 20 and transferring the heat of the processing gas 600 to the glass substrate 20.
  • the temperature rise rate of the reaction tube 100 or the processing gas that passes between the adjacent glass substrates 20 so that the temperature difference does not increase. Gas
  • the flow rate of 600 is adjusted to an appropriate value and heated.
  • a cylindrical rectifying plate 430 is provided inside the reaction tube 100, and a plurality of glass substrates 20 are provided inside the cylindrical rectifying plate 430. Is arranged.
  • the cylindrical rectifying plate 430 of the first embodiment extends along the flow direction of the processing gas 600 on the surface of the glass substrate 20 generated by the forced convection by the wings 510 of the electric fan 500, and includes a plurality of It is provided so that the surface of the board
  • the cylindrical rectifying plate 430 has an airflow P of the processing gas 600 (flowing direction of the processing gas 600) flowing along the long side direction of the glass substrate 20 formed by the rotation of the wing portion 510 and the airflow P.
  • the airflow Q flowing toward the wing portion 510 of the electric fan 500 reverses at the inner wall of the seal cap 110 and flows toward the wing portion 510 of the electric fan 500. It is controlled to flow along.
  • the flow path of the air flow Q that is reversed by the seal cap 110 and goes to the wings 510 outside the plurality of glass substrates 20 is narrowed, so that the air flow Q flows along the inner peripheral surface 100 a of the reaction tube 100. Is controlling.
  • the flow straightening plate 430 controls the flow of the processing gas 600 so that the air flow Q toward the wing portion 510 flows along the inner peripheral surface 100a of the reaction tube 100 in a region outside the flow straightening plate 430.
  • the cylindrical rectifying plate 430 is provided inside the reaction tube 100 (inside the processing chamber 30), the flow path of the processing gas 600 flowing toward the wing portion 510 of the electric fan 500 is changed to the reaction tube 100. Therefore, the processing gas 600 can be controlled so as to flow along the inner peripheral surface 100a of the heated reaction tube 100. Thereby, stabilization of the flow of the processing gas 600 inside the reaction tube 100 can be achieved.
  • the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
  • the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100a of the reaction tube 100, thereby increasing the surface area of the inner peripheral surface 100a of the reaction tube 100. Therefore, it is possible to increase the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100.
  • the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
  • the glass substrate 20 is heated, and when the glass substrate 20 is heated to a predetermined temperature (for example, 400 to 500 ° C., which will be described later), the processing gas (selenium element-containing gas (selenium selenization) is contained in the processing chamber 30. Source)) 600 is introduced to perform film formation on the glass substrate 20.
  • a predetermined temperature for example, 400 to 500 ° C., which will be described later
  • the processing gas elenium element-containing gas (selenium selenization) is contained in the processing chamber 30.
  • Source 600 is introduced to perform film formation on the glass substrate 20.
  • the processing gas (selenization source) 600 is introduced into the reaction tube 100 while the reaction tube 100 is heated, and also in this case, the atmosphere inside the reaction tube 100 is changed to a glass substrate by the blades 510 of the electric fan 500.
  • the airflow P and airflow Q stabilized by the cylindrical rectifying plate 430 are formed by forced convection along the surface 20, and a film forming process is performed on the plurality of glass substrates 20 in this state.
  • the light absorption layer of a CIS type solar cell is formed on each glass substrate 20 (formation process).
  • the temperature of the reaction tube 100 is decreased at a constant rate, and the processing gas 600 in the processing chamber 30 is replaced with an inert gas such as nitrogen. That is, after completion of the film forming process, an inert gas such as nitrogen gas is introduced from the gas supply pipe 300 to replace the atmosphere in the processing chamber 30, and the temperature is lowered to a predetermined temperature (temperature lowering step).
  • the seal cap 110 is moved to open the processing chamber 30. Thereafter, the cassette 410 is unloaded by the arm of the unloading / unloading apparatus (not shown) (unloading step), and the series of film forming processes is completed.
  • a metal precursor film (laminated film) made of Cu (copper), In (indium), and Ga (gallium) formed on the glass substrate 20 is formed of H 2 Se ( In the process of performing Se (selenium) conversion with hydrogen selenide gas, film formation is performed in about 20 minutes to 2 hours while the temperature of the glass substrate 20 disposed in the processing chamber 30 is maintained at 400 to 500 ° C. .
  • FIG. 5 is a sectional view showing an example of the structure of the main part of the substrate processing apparatus according to the second embodiment of the present invention.
  • FIG. 6 is a sectional view showing an example of the structure in the circumferential direction of the substrate processing apparatus shown in FIG. 7 is an enlarged partial cross-sectional view showing the structure of part B of FIG. 6, and
  • FIG. 8 is a simulation result diagram showing an example of the effect of the substrate processing apparatus according to the second embodiment of the present invention.
  • the substrate processing apparatus of the second embodiment includes the same processing furnace 10 as the substrate processing apparatus of the first embodiment, but the processing furnace 10 of the second embodiment is shown in FIGS.
  • a plurality of electric fans 500 are provided on the upper portion of the reaction tube 100, and therefore forced convection caused by the rotation of the blade portion 510 of the electric fan 500 is directed from the upper portion to the lower portion of the reaction tube 100. Therefore, the airflow R generated by the rotation of the wing portion 510 flows along the short side direction of the glass substrate 20.
  • the reaction tube 100 and the seal cap 110 can be hermetically configured, and a plurality of electric fans 500 are provided side by side on the upper portion of the reaction tube 100.
  • the structure is such that the gas in the processing chamber 30 can be agitated by rotating the wing part (fan) 510 by a power part (fan drive part) 530 provided outside the chamber.
  • the processing furnace 10 has the reaction tube 100 as a furnace body formed with metal materials, such as stainless steel.
  • the reaction tube 100 has a hollow cylindrical shape (tubular shape), and has a structure in which one end is closed and the other end is opened.
  • a processing chamber 30 is formed by the hollow portion of the reaction tube 100.
  • a cylindrical manifold 120 having both ends opened concentrically with the reaction tube 100 is provided.
  • An O-ring (not shown) as a seal member is provided between the reaction tube 100 and the manifold 120.
  • a movable seal cap 110 is provided in the opening portion of the manifold 120 where the reaction tube 100 is not provided.
  • the seal cap 110 is formed of a metal material such as stainless steel and has a convex shape in which a part thereof is inserted into the opening of the manifold 120.
  • An O-ring (not shown) as a seal member is provided between the movable seal cap 110 and the manifold 120. When performing processing, the seal cap 110 seals the opening side of the reaction tube 100 in an airtight manner. Block.
  • a plurality of glass substrates (for example, 30 to 40 sheets) 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are provided inside the reaction tube 100.
  • An installation table 420 for placing the cassette 410 to be held is provided inside the reaction tube 100.
  • the installation table 420 is configured such that one end thereof is fixed to the inner peripheral surface 100 a of the reaction tube 100 and the cassette 410 is mounted on the center of the reaction tube 100 via the installation table 420.
  • the cassette 410 is a holding member that can hold the glass substrates 20 side by side in a state in which the plurality of glass substrates 20 stand on both ends of the glass substrate 20.
  • the glass substrate 20 when the glass substrate 20 is accommodated in the cassette 410, as shown in FIG. 6, it accommodates at intervals so that it may not interfere with the adjacent glass substrate 20 (it does not contact).
  • the bottom plate of the cassette 410 is hollow to facilitate the passage of the gas of the airflow R, and as shown in the D part, the glass substrate 20 is supported only by its edge part. It has become.
  • a furnace body heating unit 200 which is a heating unit having a hollow cylindrical shape with one end closed and the other end opened.
  • a cap heating unit 210 is provided on the side surface (outside) of the seal cap 110 opposite to the reaction tube 100.
  • the interior of the furnace body heating unit 200 and the cap heating unit 210 are heated through the reaction tube 100, that is, the inside of the processing chamber 30.
  • the furnace heating unit 200 is fixed to the reaction tube 100 by a fixing unit (not shown), and the cap heating unit 210 is fixed to the seal cap 110 by a fixing unit (not shown).
  • the seal cap 110 and the manifold 120 are provided with a cooling means (not shown) for water cooling in order to protect the O-ring having low heat resistance.
  • the manifold 120 is provided with a gas supply pipe 300 for supplying selenium hydride (hereinafter referred to as “H 2 Se”) as a selenium element-containing gas (selenization source, process gas 600).
  • H 2 Se selenium hydride
  • the H 2 Se supplied from the gas supply pipe 300 is supplied (introduced) from the gas supply pipe 300 through the gap between the manifold 120 and the seal cap 110.
  • an exhaust pipe 310 is provided in the manifold 120 on the opposite side of the gas supply pipe 300, and the atmosphere in the processing chamber 30 is from the exhaust pipe 310 through a gap between the manifold 120 and the seal cap 110. Exhausted. It should be noted that when the portion cooled by the above-described cooling means is cooled to 150 ° C. or lower, unreacted selenium is condensed in that portion, so the temperature is preferably controlled from 150 ° C. to about 170 ° C.
  • the reaction tube 100 of the second embodiment is provided with a plurality of electric fans 500. That is, as shown in FIG. 5, a plurality of electric fans 500 are provided on the upper portion of the reaction tube 100, and by driving these electric fans 500, the atmosphere inside the reaction tube 100 is forcibly convected along the surface of the glass substrate 20. be able to.
  • Each of the plurality of electric fans 500 is provided so as to penetrate the blade portion 510 that forms convection in the processing chamber 30 by rotating, the side wall of the cylindrical reaction tube 100, and the side wall of the furnace body heating unit 200.
  • a power unit 530 that is provided outside the furnace body heating unit 200 and rotates the rotation shaft unit 520.
  • a protective member 540 is provided between the rotary shaft portion 520 and the reaction tube 100 and the furnace body heating portion 200, and a nitrogen purge is performed in a narrow gap between the protective member 540 and the rotary shaft portion 520. This prevents the reaction gas (processing gas 600) from entering the power unit 530 from the rotating shaft unit 520 as much as possible.
  • an air flow R of the processing gas 600 that flows along the short side direction of the glass substrate 20 (the vertical direction (circumferential cross-sectional direction) of the cylindrical reaction tube 100) is formed in the processing chamber 30. Is done.
  • the flow velocity of the gas necessary to make the temperature in the surface of the glass substrate 20 uniform. Can be lowered.
  • the 1st baffle plate 440 which covers the circumference
  • the first rectifying plate 440 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and although it extends along the flow direction (air flow R) of the processing gas 600 on the surface of the glass substrate 20 generated by forced convection of the electric fan 500, it also covers one side of the plurality of glass substrates 20.
  • the upper and lower portions of the first rectifying plate 440 are open so that gas can pass as shown in FIG.
  • the second rectifying plate 450 has a flow path of the airflow S toward the upper wing portion 510 in a region between the first rectifying plate 440 and the inner peripheral surface 100 a of the reaction tube 100.
  • the airflow S is narrow and provided in a curved shape so as to flow along the inner peripheral surface 100 a of the reaction tube 100.
  • the first rectifying plate 440 is attached to the inner peripheral surface 100a of the reaction tube 100, and the second rectifying plate 450 is attached to the first rectifying plate 440.
  • the first rectifying plate 440 and the second rectifying plate 450 are arranged along the short side direction of the glass substrate 20 by the forced convection formed by the rotation of the blade portion 510 by the driving of the plurality of electric fans 500 provided in the upper portion.
  • the airflow R collides with the inner wall of the lower part of the reaction tube 100 and then the outside of the plurality of glass substrates 20 (region between the second rectifying plate 450 and the inner peripheral surface 100a of the reaction tube 100).
  • the airflow S of the processing gas 600 flowing toward the wings 510 of the plurality of electric fans 500 is separated.
  • the first rectifying plate 440 and the second rectifying plate 450 include an air flow R that flows along the short side direction of the glass substrate 20 formed by the rotation of the plurality of blades 510, and the air flow R is the lower part of the reaction tube 100.
  • the airflow S flowing toward the wings 510 of the plurality of electric fans 500 after reaching the inner peripheral surface 100a of the plurality of electric fans 500 has a function of dividing the airflow S toward the wings 510 into the inner periphery of the reaction tube 100. It is controlled to flow along the surface 100a.
  • the airflow R of the processing gas 600 flowing along the surface in the short side direction of the glass substrate 20 by the forced convection formed by driving the plurality of electric fans 500 (the flow direction of the processing gas 600) is the first rectification.
  • the air flow S toward the wing 510 is the inner peripheral surface of the reaction tube 100 in the region outside the second rectifying plate 450.
  • the first rectifying plate 440 and the second rectifying plate 450 control the flow of the processing gas 600 so as to flow along 100a.
  • the flow of the processing gas 600 during the processing of the glass substrate 20 in the processing chamber 30 can be stably circulated.
  • the flow path of the processing gas 600 that flows toward the blades 510 of the plurality of electric fans 500. Can be made narrower along the inner peripheral surface 100a of the reaction tube 100, so that the processing gas 600 flowing toward the plurality of wings 510 can be made to flow along the inner peripheral surface 100a of the heated reaction tube 100. It can be controlled to flow. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
  • the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
  • a plurality of irregularities 103 are formed on the inner peripheral surface 100 a of the reaction tube 100 as shown in FIG.
  • the unevenness 103 is formed over substantially the entire inner peripheral surface 100a of the reaction tube 100 (for example, the inner peripheral surface 100a through which the processing gas 600 passes).
  • the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100 can be increased. .
  • the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
  • the other configuration of the substrate processing apparatus according to the second embodiment is the same as that of the substrate processing apparatus according to the first embodiment, and a duplicate description thereof is omitted.
  • a CIGS solar system A case where the selenization process is performed in the battery manufacturing process will be described.
  • each glass substrate 20 is arrange
  • the cassette 410 is carried into the processing chamber 30 by, for example, moving the cassette 410 into the processing chamber 30 with the lower portion of the cassette 410 supported and lifted by an arm of a loading / unloading device (not shown). After reaching the position, the arm is moved downward and the cassette 410 is placed on the installation table 420.
  • the seal cap 110 is closed to make the processing chamber 30 sealed, and the atmosphere inside the processing chamber 30 is replaced with an inert gas (processing gas 600) such as nitrogen gas (replacement step).
  • processing gas 600 such as nitrogen gas
  • replacement step After substituting the atmosphere in the processing chamber 30 with the inert gas, power is supplied to a heater such as the furnace body heating unit 200 and the reaction tube 100 is heated at a predetermined temperature increase rate. For example, the temperature is raised to 400 to 550 ° C., preferably 450 to 550 ° C. at 3 to 15 ° C. per minute.
  • the blades 510 of the electric fan 500 are rotated by the power unit 530, and a plurality of processing gases (inert gases) 600 heated in the vicinity of the inner peripheral surface 100 a of the reaction tube 100 are accommodated in the cassette 410.
  • the glass substrate 20 is heated by passing through the glass substrates 20 along the short side direction of each glass substrate 20 and transferring the heat of the processing gas 600 to the glass substrate 20.
  • the temperature rise rate of the reaction tube 100 or the processing gas that passes between the adjacent glass substrates 20 so that the temperature difference does not increase. Gas
  • the flow rate of 600 is adjusted to an appropriate value and heated.
  • a first rectifying plate 440 that covers the periphery of the cassette 410 is provided inside the reaction tube 100, and further, in a region outside the first rectifying plate 440.
  • a second rectifying plate 450 is provided.
  • the first rectifying plate 440 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and although it extends along the flow direction (air flow R) of the processing gas 600 on the surface of the glass substrate 20 generated by forced convection of the electric fan 500, it also covers one side of the plurality of glass substrates 20.
  • the upper and lower portions of the first rectifying plate 440 are open so that gas can pass as shown in FIG.
  • the second rectifying plate 450 has a flow path of the airflow S toward the upper wing portion 510 in a region between the first rectifying plate 440 and the inner peripheral surface 100 a of the reaction tube 100.
  • the airflow S is narrow and provided in a curved shape so as to flow along the inner peripheral surface 100 a of the reaction tube 100.
  • the first rectifying plate 440 and the second rectifying plate 450 are arranged along the short side direction of the glass substrate 20 by the forced convection formed by the rotation of the blade portion 510 by the driving of the plurality of electric fans 500 provided in the upper portion.
  • the airflow R collides with the inner wall of the lower part of the reaction tube 100 and then the outside of the plurality of glass substrates 20 (region between the second rectifying plate 450 and the inner peripheral surface 100a of the reaction tube 100).
  • the airflow S of the processing gas 600 flowing toward the wings 510 of the plurality of electric fans 500 is separated.
  • the first rectifying plate 440 and the second rectifying plate 450 include an air flow R that flows along the short side direction of the glass substrate 20 formed by the rotation of the plurality of blades 510, and the air flow R is the lower part of the reaction tube 100.
  • the airflow S flowing toward the wings 510 of the plurality of electric fans 500 after reaching the inner peripheral surface 100a of the plurality of electric fans 500 has a function of dividing the airflow S toward the wings 510 into the inner periphery of the reaction tube 100. It is controlled to flow along the surface 100a.
  • the flow of the processing gas 600 flowing toward the blades 510 of the plurality of electric fans 500 is increased.
  • the path can be narrowed along the inner peripheral surface 100a of the reaction tube 100, and thus the process gas 600 can be controlled to flow along the inner peripheral surface 100a of the heated reaction tube 100. . Thereby, stabilization of the flow of the processing gas 600 inside the reaction tube 100 can be achieved.
  • the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
  • the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100 a of the reaction tube 100, thereby increasing the surface area of the inner peripheral surface 100 a of the reaction tube 100. Therefore, it is possible to increase the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100.
  • the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
  • the temperature increase rate of the reaction tube 100 and the speed of the processing gas 600 blown between the glass substrates 20 so that the temperature difference does not increase. Adjust to heat. That is, the temperature increase rate of the glass substrate 20 and the blowing speed of the electric fan 500 (the number of rotations of the electric fan 500) are adjusted as appropriate so that the temperature distribution of the glass substrate 20 does not deteriorate.
  • the glass substrate 20 is heated, and when the glass substrate 20 is heated to a predetermined temperature (for example, 400 to 500 ° C., which will be described later), the processing gas (selenium element-containing gas (selenium selenization) is contained in the processing chamber 30. Source)) 600 is introduced to perform film formation on the glass substrate 20.
  • a predetermined temperature for example, 400 to 500 ° C., which will be described later
  • the processing gas elenium element-containing gas (selenium selenization) is contained in the processing chamber 30.
  • Source 600 is introduced to perform film formation on the glass substrate 20.
  • the processing gas (selenization source) 600 is introduced into the reaction tube 100 while the reaction tube 100 is heated, and also in this case, the atmosphere inside the reaction tube 100 is changed to a glass substrate by the blades 510 of the electric fan 500. Then, forced convection is performed along the surface of 20, and stabilized airflow R and airflow S are formed by the cylindrical rectifying plate 430. In this state, film formation processing is performed on the plurality of glass substrates 20. By this selenization process, the light absorption layer of a CIS type solar cell is formed on each glass substrate 20 (formation process).
  • the supply of the processing gas (selenization source, hydrogen selenide gas) 600 is stopped, the temperature of the reaction tube 100 is lowered at a constant rate, and the processing gas 600 in the processing chamber 30 is nitrogenated.
  • an inert gas such as nitrogen gas is introduced from the gas supply pipe 300 to replace the atmosphere in the processing chamber 30, and the temperature is lowered to a predetermined temperature (temperature lowering step).
  • the seal cap 110 is moved to open the processing chamber 30. Thereafter, the cassette 410 is unloaded by the arm of the unloading / unloading apparatus (not shown) (unloading step), and the series of film forming processes is completed.
  • the temperature lowering conditions such as the amount of nitrogen gas introduced are adjusted so that the temperature difference in the substrate does not increase.
  • the electric fan 500 is provided on the upper portion of the glass substrate 20 has been described.
  • the plurality of electric fans 500 may be installed on the lower portion of the glass substrate 20.
  • FIG. 8 shows that in the processing furnace 10 having the same structure except for the position of the electric fan 500, the flow rate between the glass substrates 20 when the temperature is raised at a rate of 5 ° C./min is changed. It is the result of simulating the flow rate required to suppress the temperature difference to about 30 ° C.
  • FIG. 8A shows a case where the electric fan 500 is arranged on the side of the processing furnace 10 as in the first embodiment and the flow of the processing gas 600 on the surface of the glass substrate 20 is in the long side direction of the glass substrate 20.
  • FIG. 8A-1 shows a state where 20 minutes have elapsed since the start of heating
  • FIG. 8A-2 shows a state where 60 minutes have elapsed since the start of heating. It can be seen from the degree of shading in the figure that the temperature difference in the surface of the glass substrate 20 is suppressed to about 30 ° C. Furthermore, the result that the flow rate of the gas required for suppressing the temperature difference in the plane of the glass substrate 20 to about 30 ° C. by simulation was 10 m / sec.
  • FIG. 8B the electric fan 500 is arranged on the upper part of the processing furnace 10 as in the second embodiment, and the flow of the processing gas 600 on the surface of the glass substrate 20 is directed in the short side direction of the glass substrate 20.
  • FIG. 8B-1 shows a state where 20 minutes have elapsed since the start of heating
  • FIG. 8B-2 shows a state where 60 minutes have elapsed since the start of heating. It can be seen from the degree of shading in the figure that the temperature difference in the surface of the glass substrate 20 is suppressed to about 30 ° C. Furthermore, the simulation showed that the flow rate of the gas required to suppress the in-plane temperature difference of the glass substrate 20 to about 30 ° C. was 2 m / sec.
  • the flow of the process gas 600 in the first embodiment is changed to the glass substrate 20 by setting the flow of the process gas 600 in the short side direction of the glass substrate 20 as in the second embodiment.
  • the flow velocity of the processing gas 600 can be suppressed (reduced), and the glass substrate 20 can be enlarged.
  • FIG. 9 is a cross-sectional view showing the structure of the main part of a substrate processing apparatus according to a modification of the second embodiment of the present invention.
  • the processing furnace 10 of the modified example shown in FIG. 9 is different from the structure in which only one cassette 410 holding a plurality of glass substrates 20 is placed, and a plurality of cassettes 410 (here, three) are arranged into a plurality of glass substrates.
  • the structure which has been arranged in the direction parallel to the long side direction of the surface of 20 is shown.
  • the reaction tube 100 has a more horizontally long shape and the flow of the processing gas 600 becomes unstable.
  • the plurality of electric fans 500 are provided at the upper portion and the rectifying plate 460 is also provided, the processing gas 600 can be flowed along the short side direction of each glass substrate 20, and as a result, the processing gas 600. Can be stabilized.
  • the reaction tube 100 is increased in size by adopting a structure in which the processing gas 600 flows along the short side direction of the glass substrate 20 as in the processing furnace 10 of the second embodiment.
  • it is easier to mold than quartz, and its cost increase is small compared to quartz.
  • the number of glass substrates 20 that can be processed at a time can be increased, and the manufacturing cost of the CIS solar cell can be reduced.
  • reaction tube 100 by using a metal material such as stainless steel as a base material of the reaction tube 100, it is easy to handle as compared with a quartz reaction tube, and the reaction tube 100 can be enlarged.
  • a metal material such as stainless steel
  • the flow path of the processing gas 600 flowing toward the electric fan 500 can be narrowed along the inner peripheral surface 100a of the reaction tube 100. Therefore, the processing gas 600 is heated to the heated reaction tube. It can control so that it may flow along the internal peripheral surface 100a of 100. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
  • the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the inner periphery of the heated reaction tube 100
  • the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
  • a plurality of glass substrates on which copper (Cu), indium (In), and gallium (Ga) are formed have been subjected to selenization treatment.
  • a plurality of glass substrates on which (Cu) / indium (In), copper (Cu) / gallium (Ga), or the like is formed may be selenized.
  • the selenization having high reactivity with the metal material is mentioned.
  • the sulfur element-containing gas is changed to the selenization treatment or after the selenization treatment.
  • the sulfuration treatment may be performed by supplying. Also in that case, by using the large reactor of the second embodiment, the number of sheets that can be subjected to the sulfiding treatment can be increased at one time, so that the manufacturing cost can be reduced.
  • the plurality of irregularities 103 may be provided over the entire inner peripheral surface 100a of the reaction tube 100 in a state where a predetermined interval is provided with respect to the inner peripheral surface 100a.
  • a reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates, and a gas supply pipe that introduces a processing gas for the film forming process into the reaction tube;
  • An exhaust pipe that exhausts the atmosphere inside the reaction tube, a heating unit that heats the reaction tube, a fan that forces the atmosphere inside the reaction tube along the surface of the substrate, and the forced convection.
  • a rectifying plate that extends along a flow direction of the processing gas on the surface of the generated substrate and covers the surface of the substrate disposed at an outermost position among the plurality of substrates.
  • a substrate processing apparatus for controlling the processing gas flowing toward the fan outside the plurality of substrates to flow along an inner peripheral surface of the reaction tube.
  • the current plate is a cylindrical substrate processing apparatus.
  • a reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates, and a gas supply pipe that introduces a processing gas for the film forming process into the reaction tube;
  • An exhaust pipe that exhausts the atmosphere inside the reaction tube, a heating unit that heats the reaction tube, and a fan that forcibly convects the atmosphere inside the reaction tube along the surface of the substrate,
  • a substrate processing apparatus wherein a plurality of irregularities are formed on an inner peripheral surface of the reaction tube.
  • a substrate processing method using a substrate processing apparatus comprising a cylindrical reaction tube provided with a fan inside, wherein (a) a step of arranging a plurality of substrates at intervals in the reaction tube And (b) introducing a processing gas into the reaction tube while the reaction tube is heated, and forcibly convection the atmosphere inside the reaction tube along the surface of the substrate by the fan.
  • a film forming process on the substrate, and extending in the flow direction of the processing gas on the surface of the substrate generated by the forced convection in the step (b) and The processing gas that flows toward the fan outside the plurality of substrates flows along the inner peripheral surface of the reaction tube by a rectifying plate that covers the surface of the substrate disposed at the outermost position of the substrates.
  • Substrate processing method to be controlled.
  • the present invention is suitable for a technique for performing substrate processing by heating.

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Abstract

[Problem] To increase the substrate heating efficiency and to reduce the time needed for the substrate to acquire a higher temperature. [Solution] A substrate treatment device, provided with: an airtight processing chamber (30) comprising a cylindrical reaction tube (100) and a seal cap (110); a furnace body heating unit (200), which is a heater provided around the reaction tube (100); a cassette (410) arranged in the processing chamber (30), a plurality of glass substrates (20) being housed in the cassette (410); an electric fan (500) provided to a sealed-off lateral part inside the reaction tube (100); and a cylindrically shaped straightening vane (430) for covering the surface of the glass substrate (20) arranged at the outermost position, the glass substrate (20) being one of the glass substrates (20) arranged by being placed on the cassette (410) in the processing chamber (30), and for controlling an airflow (Q) heading toward the blade part (510) of the electric fan (500) so as to flow along the inner circumferential surface (100a) of the reaction tube (100).

Description

基板処理装置及びそれを用いた基板処理方法Substrate processing apparatus and substrate processing method using the same
　本発明は、基板処理装置及びそれを用いた基板処理方法に関し、特に、基板の処理時間の短縮化に適用して有効な技術に関する。 The present invention relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly to a technique effective when applied to shortening the processing time of a substrate.
　セレン化物系ＣＩＳ（カルコパイライト）太陽電池は、ガラス基板、金属裏面電極層、ＣＩＳ系光吸収層、高抵抗バッファ層、窓層が順に積層される構造を有する。ここでＣＩＳ系光吸収層は、銅（Ｃｕ）／ガリウム（Ｇａ）、Ｃｕ／インジウム（Ｉｎ）、若しくは、Ｃｕ－Ｇａ／Ｉｎのいずれか一つの積層構造をセレン化することにより形成される。このように、セレン化物系ＣＩＳ太陽電池は、シリコン（Ｓｉ）を用いずに形成できるため、基板を薄くできると共に製造コストを下げることができるという特徴を有している。 A selenide-based CIS (chalcopyrite) solar cell has a structure in which a glass substrate, a metal back electrode layer, a CIS-based light absorption layer, a high-resistance buffer layer, and a window layer are sequentially stacked. Here, the CIS light absorption layer is formed by selenizing any one of the laminated structures of copper (Cu) / gallium (Ga), Cu / indium (In), or Cu—Ga / In. Thus, since the selenide CIS solar cell can be formed without using silicon (Si), the substrate can be made thin and the manufacturing cost can be reduced.
　ここで、セレン化を行う装置の一例として、特許文献１（特開２００６－１８６１１４号公報）がある。特許文献１に記載されるセレン化装置（成膜装置）は、ホルダーにより複数の平板状の対象物（基板）を一定の間隔を設けて、円筒状の石英チャンバー（反応管）の長軸方向（長手方向）に平行に、かつその板面を垂直に配置し、セレン源を導入することにより、対象物のセレン化を行っている。また、ファンを円筒状の石英チャンバーの軸方向の端部に取り付けることにより、石英チャンバー内のセレン化源を含むガスを強制的に対流させ、ガラス基板上の温度分布の均一化を行うことが記載されている。 Here, as an example of an apparatus for performing selenization, there is Patent Document 1 (Japanese Patent Laid-Open No. 2006-186114). In the selenization apparatus (film formation apparatus) described in Patent Document 1, a long axis direction of a cylindrical quartz chamber (reaction tube) is formed by providing a plurality of flat objects (substrates) with a fixed interval by a holder. The object is selenized by arranging the plate surface in parallel with the (longitudinal direction) and introducing a selenium source. In addition, by attaching a fan to the end of the cylindrical quartz chamber in the axial direction, the gas containing the selenization source in the quartz chamber can be forced to convection and the temperature distribution on the glass substrate can be made uniform. Are listed.
特開２００６－１８６１１４号公報JP 2006-186114 A
　特許文献１に記載されるようにファンを円筒状の石英チャンバー（反応管、反応室）の軸方向（長手方向）の端部に配置した場合、石英チャンバー内の雰囲気の対流は、石英チャンバー内を横方向、すなわち、ガラス基板の長辺方向に流れることになる。 As described in Patent Document 1, when the fan is disposed at the end of the cylindrical quartz chamber (reaction tube, reaction chamber) in the axial direction (longitudinal direction), the convection of the atmosphere in the quartz chamber Will flow in the horizontal direction, that is, the long side direction of the glass substrate.
　ここで、セレン化には長時間を要することから、セレン化装置の処理能力を上げるためには、反応室に載置するガラス基板の枚数を可能な限り多くする必要があり、したがって、ホルダーに挿入する複数のガラス基板の隣り合った基板との間隔を小さくして詰め込むことになる。 Here, since selenization takes a long time, it is necessary to increase the number of glass substrates placed in the reaction chamber as much as possible in order to increase the processing capacity of the selenization apparatus. A plurality of glass substrates to be inserted are packed with a small distance from adjacent substrates.
　なお、ガラス基板は、熱伝導率が小さいため、ホルダー内の複数のガラス基板の外側から熱伝導あるいは輻射でガラス基板の温度を均一に保持しながら短時間で加熱することが難しい。 In addition, since the glass substrate has a low thermal conductivity, it is difficult to heat the glass substrate in a short time while maintaining the temperature of the glass substrate uniformly by heat conduction or radiation from the outside of the plurality of glass substrates in the holder.
　また、ヒータに大きな電力を投入して急速に加熱すると、ガラス基板内の温度差が大きくなり、ガラス基板が破損してしまう。このため、ホルダー内の複数のガラス基板を加熱する場合、一般的に反応室の内部の処理ガスをファン等で攪拌して処理ガスの熱をガラス基板に伝達する方法が採用されている。 In addition, when a large electric power is supplied to the heater and heated rapidly, the temperature difference in the glass substrate increases and the glass substrate is damaged. For this reason, when heating a plurality of glass substrates in the holder, a method is generally adopted in which the processing gas inside the reaction chamber is stirred with a fan or the like to transfer the heat of the processing gas to the glass substrate.
　ところが、円筒形の反応室の内部にガラス基板を載置すると、ガラス基板の表面、すなわちガラス基板と反応室の内周面との間に空間が形成され、隣り合ったガラス基板との間を通過しないガス循環が生じたり、あるいは反応室の内周面に沿わないガス循環が生じたりして、反応室内のガスの流れが不安定になる。 However, when a glass substrate is placed inside a cylindrical reaction chamber, a space is formed between the surface of the glass substrate, that is, between the glass substrate and the inner peripheral surface of the reaction chamber, and between adjacent glass substrates. Gas circulation that does not pass through occurs or gas circulation that does not follow the inner peripheral surface of the reaction chamber occurs, resulting in an unstable gas flow in the reaction chamber.
　その結果、効率的にガラス基板を加熱できないという課題が発生する。 As a result, a problem that the glass substrate cannot be efficiently heated occurs.
　本発明は、上記課題に鑑みてなされたものであり、その目的は、基板処理における基板の加熱効率を高めることができる技術を提供することにある。 The present invention has been made in view of the above problems, and an object thereof is to provide a technique capable of increasing the heating efficiency of the substrate in the substrate processing.
　本発明の前記ならびにその他の目的と新規な特徴は、本明細書の記述および添付図面から明らかになるであろう。 The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.
　本願において開示される発明のうち、代表的なものの概要を簡単に説明すれば、以下のとおりである。 Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.
　本発明に係る基板処理装置は、反応管と、反応管の内部の雰囲気を基板の表面に沿って強制対流させるファンと、複数の基板のうちの最外部の位置に配置される基板の表面を覆い、前記複数の基板の外側で前記ファンに向かって流れる処理ガスを前記反応管の内周面に沿って流れるように制御する整流板と、を有するものである。 A substrate processing apparatus according to the present invention includes a reaction tube, a fan for forcibly convectioning the atmosphere inside the reaction tube along the surface of the substrate, and a surface of the substrate disposed at an outermost position among the plurality of substrates. And a rectifying plate that controls the processing gas flowing toward the fan outside the plurality of substrates so as to flow along the inner peripheral surface of the reaction tube.
　また、本発明に係る基板処理方法は、反応管の内部で、複数の基板のうちの最外部の位置に配置される基板の表面を覆う整流板によって、前記複数の基板の外側でファンに向かって流れる処理ガスを反応管の内周面に沿って流れるように制御して成膜処理を行うものである。 Further, the substrate processing method according to the present invention is directed to the fan outside the plurality of substrates by a rectifying plate that covers the surface of the substrate disposed at the outermost position among the plurality of substrates inside the reaction tube. The film forming process is performed by controlling the flowing process gas to flow along the inner peripheral surface of the reaction tube.
　本願において開示される発明のうち、代表的なものによって得られる効果を簡単に説明すれば、以下のとおりである。 Among the inventions disclosed in the present application, the effects obtained by typical ones will be briefly described as follows.
　基板の昇温時間の短縮化を図ることができる。 The substrate heating time can be shortened.
本発明の実施の形態１の基板処理装置の主要部の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the principal part of the substrate processing apparatus of Embodiment 1 of this invention. 図１に示す基板処理装置の円周方向の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the circumferential direction of the substrate processing apparatus shown in FIG. 図２のＡ部の構造を示す拡大部分断面図である。FIG. 3 is an enlarged partial cross-sectional view showing the structure of part A in FIG. 2. 図１に示す基板処理装置の反応管のコーティング膜の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the coating film of the reaction tube of the substrate processing apparatus shown in FIG. 本発明の実施の形態２の基板処理装置の主要部の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the principal part of the substrate processing apparatus of Embodiment 2 of this invention. 図５に示す基板処理装置の円周方向の構造の一例を示す断面図である。It is sectional drawing which shows an example of the structure of the circumferential direction of the substrate processing apparatus shown in FIG. 図６のＢ部の構造を示す拡大部分断面図である。It is an expanded partial sectional view which shows the structure of the B section of FIG. 本発明の実施の形態２の基板処理装置による効果の一例を示すシミュレーション結果図である。It is a simulation result figure which shows an example of the effect by the substrate processing apparatus of Embodiment 2 of this invention. 本発明の実施の形態２における変形例の基板処理装置の主要部の構造を示す断面図である。It is sectional drawing which shows the structure of the principal part of the substrate processing apparatus of the modification in Embodiment 2 of this invention.
　以下の実施の形態では特に必要なとき以外は同一または同様な部分の説明を原則として
繰り返さない。 In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.
　さらに、以下の実施の形態では便宜上その必要があるときは、複数のセクションまたは
実施の形態に分割して説明するが、特に明示した場合を除き、それらはお互いに無関係なものではなく、一方は他方の一部または全部の変形例、詳細、補足説明などの関係にある。 Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.
　また、以下の実施の形態において、要素の数など（個数、数値、量、範囲などを含む）に言及する場合、特に明示した場合および原理的に明らかに特定の数に限定される場合などを除き、その特定の数に限定されるものではなく、特定の数以上でも以下でも良いものとする。 Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.
　また、以下の実施の形態において、その構成要素（要素ステップ等も含む）は、特に明示した場合および原理的に明らかに必須であると考えられる場合等を除き、必ずしも必須のものではないことは言うまでもない。 Further, in the following embodiments, the constituent elements (including element steps) are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.
　また、以下の実施の形態において、構成要素等について、「Ａからなる」、「Ａよりなる」、「Ａを有する」、「Ａを含む」と言うときは、特にその要素のみである旨明示した場合等を除き、それ以外の要素を排除するものでないことは言うまでもない。同様に、以下の実施の形態において、構成要素等の形状、位置関係等に言及するときは、特に明示した場合および原理的に明らかにそうでないと考えられる場合等を除き、実質的にその形状等に近似または類似するもの等を含むものとする。このことは、上記数値および範囲についても同様である。 Further, in the following embodiments, regarding constituent elements and the like, when “consisting of A”, “consisting of A”, “having A”, and “including A” are specifically indicated that only those elements are included. It goes without saying that other elements are not excluded except in the case of such cases. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.
　以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において、同一の機能を有する部材には同一の符号を付し、その繰り返しの説明は省略する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.
　（実施の形態１）
　図１は本発明の実施の形態１の基板処理装置の主要部の構造の一例を示す断面図、図２は図１に示す基板処理装置の円周方向の構造の一例を示す断面図、図３は図２のＡ部の構造を示す拡大部分断面図、図４は図１に示す基板処理装置の反応管のコーティング膜の構造の一例を示す断面図である。 (Embodiment 1)
1 is a cross-sectional view showing an example of the structure of a main part of a substrate processing apparatus according to Embodiment 1 of the present invention. FIG. 2 is a cross-sectional view showing an example of the structure in the circumferential direction of the substrate processing apparatus shown in FIG. 3 is an enlarged partial sectional view showing the structure of part A of FIG. 2, and FIG. 4 is a sectional view showing an example of the structure of the coating film of the reaction tube of the substrate processing apparatus shown in FIG.
　本実施の形態１の基板処理装置は、ガラス基板等の基板に加熱処理を行うものであり、図１に示す主要部である処理炉１０を備えている。 The substrate processing apparatus according to the first embodiment performs a heat treatment on a substrate such as a glass substrate, and includes a processing furnace 10 which is a main part shown in FIG.
　まず、図１に示す処理炉１０の基本構造について説明する。 First, the basic structure of the processing furnace 10 shown in FIG. 1 will be described.
　基板に対して成膜処理等の加熱処理が行われる処理室（反応室ともいう）３０は、反応管１００とシールキャップ（蓋）１１０とで気密に構成され、内部には複数のガラス基板２０がカセット（ボートともいう）４１０に収納された状態で設置台４２０上に配置されている。 A processing chamber (also referred to as a reaction chamber) 30 in which a heat treatment such as a film forming process is performed on a substrate is hermetically configured by a reaction tube 100 and a seal cap (lid) 110, and a plurality of glass substrates 20 are included therein. Is placed on the installation table 420 in a state of being stored in a cassette (also referred to as a boat) 410.
　また、反応管１００は、周囲に設けた炉体加熱部２００やキャップ加熱部２１０等の加熱部（ヒータ）により加熱される構造となっており、さらに、反応管１００の材質には腐食性のガスにも耐えられるような耐腐食性が高い金属あるいはその表面に耐腐食コーティングを施した金属が用いられている。 The reaction tube 100 has a structure that is heated by a heating unit (heater) such as a furnace body heating unit 200 and a cap heating unit 210 provided in the surroundings, and the material of the reaction tube 100 is corrosive. A metal having high corrosion resistance that can withstand gas or a metal having a corrosion-resistant coating on its surface is used.
　本実施の形態１の処理炉１０では、反応管１００の内部の閉塞された一方の側部に電動ファン５００が設けられており、処理室３０の外部に設けた動力部（ファン駆動部）５３０によって羽部（ファン）５１０を回転させることで処理室３０内のガスを攪拌可能な構造となっている。 In the processing furnace 10 of the first embodiment, an electric fan 500 is provided on one side of the reaction tube 100 that is closed, and a power unit (fan driving unit) 530 provided outside the processing chamber 30. Therefore, the gas in the processing chamber 30 can be agitated by rotating the wing (fan) 510.
　なお、反応管１００には、ガラス基板２０を処理するためのガス導入部、処理室３０の内部のガスを置換するための排気口、排気口からガスを排気するための排気装置に連結された排気管、窒素等の不活性ガスの導入部等が設けられている。 The reaction tube 100 is connected to a gas introduction unit for processing the glass substrate 20, an exhaust port for replacing the gas inside the processing chamber 30, and an exhaust device for exhausting the gas from the exhaust port. An exhaust pipe, an introduction part of an inert gas such as nitrogen, and the like are provided.
　次に、処理炉１０の構造について詳しく説明する。 Next, the structure of the processing furnace 10 will be described in detail.
　処理炉１０は、ステンレス等の金属材料で形成される炉体としての反応管１００を有している。反応管１００は、中空の円筒形状（筒状）をしており、その一端が閉塞し、他端が開口する構造を有している。反応管１００の中空部分により、処理室３０が形成される。反応管１００の開口側には、反応管１００と同心円上に、その両端が開口した円筒形状のマニホールド１２０が設けられている。反応管１００とマニホールド１２０との間には、シール部材としてのＯリング（図示せず）が設けられている。 The processing furnace 10 has a reaction tube 100 as a furnace body made of a metal material such as stainless steel. The reaction tube 100 has a hollow cylindrical shape (tubular shape), and has a structure in which one end is closed and the other end is opened. A processing chamber 30 is formed by the hollow portion of the reaction tube 100. On the opening side of the reaction tube 100, a cylindrical manifold 120 having both ends opened concentrically with the reaction tube 100 is provided. An O-ring (not shown) as a seal member is provided between the reaction tube 100 and the manifold 120.
　また、マニホールド１２０の反応管１００が設けられない開口部には、可動性のシールキャップ１１０が設けられている。シールキャップ１１０は、ステンレス等の金属材料で形成され、マニホールド１２０の開口部に、その一部が挿入される凸型形状をしている。可動性のシールキャップ１１０とマニホールド１２０との間には、シール部材としてのＯリング（図示せず）が設けられ、処理を行う際には、シールキャップ１１０が反応管１００の開口側を気密に閉塞する。 In addition, a movable seal cap 110 is provided in the opening portion of the manifold 120 where the reaction tube 100 is not provided. The seal cap 110 is formed of a metal material such as stainless steel and has a convex shape in which a part thereof is inserted into the opening of the manifold 120. An O-ring (not shown) as a seal member is provided between the movable seal cap 110 and the manifold 120. When performing processing, the seal cap 110 seals the opening side of the reaction tube 100 in an airtight manner. Block.
　また、反応管１００の内部には、一例として、銅（Ｃｕ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）を含有する積層膜が形成された複数のガラス基板（例えば、３０～６０枚）２０を保持するカセット４１０を載置するための設置台４２０が設けられている。 Further, inside the reaction tube 100, as an example, a plurality of glass substrates (for example, 30 to 60 sheets) 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are provided. An installation table 420 for placing the cassette 410 to be held is provided.
　設置台４２０は、その一端が反応管１００の内周面１００ａに固定されると共に、反応管１００の中心部にカセット４１０が設置台４２０を介して載置されるように構成されている。 The installation table 420 is configured such that one end thereof is fixed to the inner peripheral surface 100 a of the reaction tube 100 and the cassette 410 is mounted on the center of the reaction tube 100 via the installation table 420.
　カセット４１０は、図１に示されるように、ガラス基板２０の両端に、複数のガラス基板２０を立てた状態で横方向に並んで保持可能な保持部材である。なお、ガラス基板２０がカセット４１０に収容される際には、図２に示すように、隣のガラス基板２０と干渉しないように（接触しないように）間隔をあけて収容される。さらに、図１に示すように気流Ｐのガス流れを妨げないように、側面部Ｃの板は極力フレーム４１０ａのみ（側面部Ｃの板は、例えば枠状）となっており、円筒形の整流板４３０内を流れるガスが流れ易い構造となっている。また、それぞれのガラス基板２０は、例えばカセット４１０の図２に示す底板の溝と図１のフレーム４１０ａによって支持されている。 As shown in FIG. 1, the cassette 410 is a holding member that can hold the glass substrates 20 side by side in a state in which the plurality of glass substrates 20 stand on both ends of the glass substrate 20. In addition, when the glass substrate 20 is accommodated in the cassette 410, as shown in FIG. 2, it accommodates at intervals so that it may not interfere with the adjacent glass substrate 20 (it does not contact). Furthermore, as shown in FIG. 1, the plate of the side surface portion C is only the frame 410a as much as possible (the plate of the side surface portion C is, for example, a frame shape) so as not to disturb the gas flow of the airflow P. The gas flowing through the plate 430 is easy to flow. Moreover, each glass substrate 20 is supported by the groove | channel of the baseplate shown in FIG. 2 of the cassette 410, and the flame | frame 410a of FIG. 1, for example.
　また、反応管１００の周囲には、一端が閉塞し、かつ他端が開口する中空の円筒形状をした加熱部である炉体加熱部２００が設けられている。さらに、シールキャップ１１０の反応管１００と反対側（外側）の側面には、キャップ加熱部２１０が設けられている。この炉体加熱部２００とキャップ加熱部２１０により反応管１００を介してその内部、すなわち処理室３０内が加熱される。なお、炉体加熱部２００は、図示しない固定部により反応管１００に固定され、キャップ加熱部２１０は、図示しない固定部によりシールキャップ１１０に固定されている。また、シールキャップ１１０やマニホールド１２０には、耐熱性の低いＯリングを保護するため図示しない水冷との冷却手段が設けられる。 Further, around the reaction tube 100, there is provided a furnace body heating unit 200 which is a heating unit having a hollow cylindrical shape with one end closed and the other end opened. Further, a cap heating unit 210 is provided on the side surface (outside) of the seal cap 110 opposite to the reaction tube 100. The interior of the furnace body heating unit 200 and the cap heating unit 210 are heated through the reaction tube 100, that is, the inside of the processing chamber 30. The furnace heating unit 200 is fixed to the reaction tube 100 by a fixing unit (not shown), and the cap heating unit 210 is fixed to the seal cap 110 by a fixing unit (not shown). Further, the seal cap 110 and the manifold 120 are provided with a cooling means (not shown) for water cooling in order to protect the O-ring having low heat resistance.
　なお、マニホールド１２０には、セレン元素含有ガス（セレン化源、処理ガス６００）としての水素化セレン（以下、「Ｈ2Ｓｅ」と呼ぶ）を供給するためのガス供給管３００が設けられており、ガス供給管３００から供給されたＨ2Ｓｅは、ガス供給管３００からマニホールド１２０とシールキャップ１１０との間の間隙を介して処理室３０へ供給される（導入される）。 The manifold 120 is provided with a gas supply pipe 300 for supplying selenium hydride (hereinafter referred to as “H 2 Se”) as a selenium element-containing gas (selenization source, process gas 600). The H 2 Se supplied from the gas supply pipe 300 is supplied (introduced) from the gas supply pipe 300 through the gap between the manifold 120 and the seal cap 110.
　一方、ガス供給管３００の反対側のマニホールド１２０には、排気管３１０が設けられており、処理室３０内の雰囲気は、マニホールド１２０とシールキャップ１１０との間の間隙を介して排気管３１０より排気される。なお、上述の冷却手段により冷却される箇所は、１５０℃以下まで冷却すると、その部分に未反応のセレンが凝縮してしまうため、１５０℃から１７０℃程度に温度制御すると良い。 On the other hand, an exhaust pipe 310 is provided in the manifold 120 on the opposite side of the gas supply pipe 300, and the atmosphere in the processing chamber 30 is from the exhaust pipe 310 through a gap between the manifold 120 and the seal cap 110. Exhausted. It should be noted that when the portion cooled by the above-described cooling means is cooled to 150 ° C. or lower, unreacted selenium is condensed in that portion, so the temperature is preferably controlled from 150 ° C. to about 170 ° C.
　また、本実施の形態１の反応管１００の内部には、電動ファン５００が設けられている。すなわち、反応管１００の閉塞された一端側に電動ファン５００が設けられ、電動ファン５００の駆動により、反応管１００の内部の雰囲気をガラス基板２０の表面に沿って強制対流させることができる。電動ファン５００は、回転することにより処理室３０内の対流を形成する羽部５１０と、円筒状の反応管１００の側壁及び炉体加熱部２００の側壁を貫通するように設けられた回転軸部５２０と、炉体加熱部２００の外部に設けられ、かつ回転軸部５２０を回転させる動力部５３０とを有している。さらに、回転軸部５２０と反応管１００及び炉体加熱部２００との間には、保護部材５４０が設けられており、保護部材５４０と回転軸部５２０との間の狭い間隙に窒素パージを行うことにより、回転軸部５２０から動力部５３０に反応ガス（処理ガス６００）が浸入するのを極力抑えるようにしている。 In addition, an electric fan 500 is provided inside the reaction tube 100 of the first embodiment. That is, the electric fan 500 is provided on one end side of the reaction tube 100 that is closed, and the electric fan 500 can be driven to forcibly convection the atmosphere inside the reaction tube 100 along the surface of the glass substrate 20. The electric fan 500 rotates to provide a wing portion 510 that forms convection in the processing chamber 30, and a rotating shaft portion provided so as to penetrate the side wall of the cylindrical reaction tube 100 and the side wall of the furnace body heating unit 200. 520 and a power unit 530 that is provided outside the furnace body heating unit 200 and rotates the rotating shaft unit 520. Further, a protective member 540 is provided between the rotary shaft portion 520 and the reaction tube 100 and the furnace body heating portion 200, and a nitrogen purge is performed in a narrow gap between the protective member 540 and the rotary shaft portion 520. This prevents the reaction gas (processing gas 600) from entering the power unit 530 from the rotating shaft unit 520 as much as possible.
　電動ファン５００の回転により、処理室３０内はガラス基板２０の長辺方向（筒状の反応管１００の長手方向）に沿って流れる処理ガス６００の気流Ｐが形成される。このように、電動ファン５００を動作させ、強制対流をガラス基板２０の長辺方向に向かうようにしている。 The rotation of the electric fan 500 forms an air flow P of the processing gas 600 that flows along the long side direction of the glass substrate 20 (longitudinal direction of the cylindrical reaction tube 100) in the processing chamber 30. In this way, the electric fan 500 is operated so that forced convection is directed in the long side direction of the glass substrate 20.
　また、本実施の形態１の処理炉１０では、図１及び図２に示すように、処理室３０に円筒形の整流板４３０が設けられている。整流板４３０は、反応管１００の内部においてカセット４１０上で立てて配置される複数のガラス基板２０のうちの最外部の位置に配置されるガラス基板２０の表面を覆っており、両端が開口した形状となっている。すなわち、カセット４１０上に立てて配置された複数のガラス基板２０を覆うように円筒形の整流板４３０が設けられており、円筒形の整流板４３０の両側の端部はガスが通過可能なように開口している。 Further, in the processing furnace 10 of the first embodiment, as shown in FIGS. 1 and 2, a cylindrical rectifying plate 430 is provided in the processing chamber 30. The rectifying plate 430 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and both ends are open. It has a shape. That is, a cylindrical rectifying plate 430 is provided so as to cover a plurality of glass substrates 20 arranged upright on the cassette 410, and gas can pass through both ends of the cylindrical rectifying plate 430. Is open.
　したがって、反応管１００の内周面１００ａの長手方向の閉塞された側の壁に取り付けられた電動ファン５００の羽部５１０から円筒形の整流板４３０の一方の開口部を介して整流板４３０の内部に気流を送り込むことができるとともに、他方の反対側の開口部から整流板４３０の外側に気流を送り出すことができる。 Accordingly, the rectifying plate 430 is connected to the rectifying plate 430 through one opening of the cylindrical rectifying plate 430 from the wing portion 510 of the electric fan 500 attached to the wall of the inner peripheral surface 100a of the reaction tube 100 that is closed in the longitudinal direction. An airflow can be sent into the interior, and an airflow can be sent out of the rectifying plate 430 from the opening on the other side.
　なお、整流板４３０は、反応管１００の内周面１００ａに取り付けられている。 The rectifying plate 430 is attached to the inner peripheral surface 100a of the reaction tube 100.
　さらに、整流板４３０は、図１に示すように、電動ファン５００の駆動で羽部５１０の回転によって形成された強制対流によるガラス基板２０に沿って流れる気流Ｐと、この気流Ｐがシールキャップ１１０の内壁に衝突した後、複数のガラス基板２０の外側で電動ファン５００の羽部５１０に向かって流れる処理ガス６００の気流Ｑとを区分けしている。すなわち、整流板４３０は、羽部５１０の回転によって形成されたガラス基板２０に沿って流れる気流Ｐと、この気流Ｐがシールキャップ１１０の内壁に衝突した後、電動ファン５００の羽部５１０に向かって流れる気流Ｑとを区分けする機能を有しており、羽部５１０に向かう気流Ｑが反応管１００の内周面１００ａに沿って流れるように制御している。 Further, as shown in FIG. 1, the rectifying plate 430 includes an air flow P that flows along the glass substrate 20 by forced convection formed by the rotation of the blades 510 by driving the electric fan 500, and the air flow P is sealed cap 110. After colliding with the inner wall, the air flow Q of the processing gas 600 that flows toward the wings 510 of the electric fan 500 is separated from the outside of the plurality of glass substrates 20. That is, the rectifying plate 430 is directed toward the wing 510 of the electric fan 500 after the air flow P flowing along the glass substrate 20 formed by the rotation of the wing 510 and the air flow P collides with the inner wall of the seal cap 110. The air flow Q flowing toward the wing 510 is controlled so as to flow along the inner peripheral surface 100a of the reaction tube 100.
　これにより、電動ファン５００の駆動によって形成された強制対流により、ガラス基板２０の表面に沿って流れる処理ガス６００の気流Ｐ（処理ガス６００の流れ方向）は、整流板４３０から出た後、シールキャップ１１０の内壁に到達し、その後、羽部５１０に向かう気流Ｑが整流板４３０の外側の領域で反応管１００の内周面１００ａに沿って流れるように処理ガス６００の流れを整流板４３０が制御している。 Thereby, the airflow P of the processing gas 600 flowing along the surface of the glass substrate 20 by the forced convection formed by driving the electric fan 500 (the flow direction of the processing gas 600) exits from the rectifying plate 430 and is then sealed. The rectifying plate 430 causes the flow of the processing gas 600 to reach the inner wall of the cap 110 and then flow along the inner peripheral surface 100a of the reaction tube 100 in the region outside the rectifying plate 430 in the region outside the rectifying plate 430. I have control.
　その結果、処理室３０でのガラス基板２０の処理中の処理ガス６００の流れを安定して循環させることができる。 As a result, the flow of the processing gas 600 during the processing of the glass substrate 20 in the processing chamber 30 can be stably circulated.
　つまり、反応管１００の内部（処理室３０内）に円筒形の整流板４３０を設けたことで、電動ファン５００の羽部５１０に向かって流れる処理ガス６００の流路を、反応管１００の内周面１００ａに沿うように狭くすることができ、したがって、羽部５１０に向かって流れる処理ガス６００を加熱された反応管１００の内周面１００ａに沿って流れるように制御することができる。その結果、反応管１００の内部の処理ガス６００の流れの安定化を図ることができる。 That is, by providing the cylindrical rectifying plate 430 inside the reaction tube 100 (inside the processing chamber 30), the flow path of the processing gas 600 flowing toward the wing portion 510 of the electric fan 500 can be changed within the reaction tube 100. Therefore, the processing gas 600 flowing toward the wing portion 510 can be controlled to flow along the inner peripheral surface 100a of the heated reaction tube 100. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
　これにより、処理ガス６００の加熱効率を高めることができ、ガラス基板２０の加熱効率を高めて昇温時間の短縮化を図ることができる。 Thereby, the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
　また、処理炉１０には、図３に示すように反応管１００の内周面１００ａに複数の凹凸１０３が形成されている。この凹凸１０３は、反応管１００の内周面１００ａの略全面（例えば、処理ガス６００が通過する内周面１００ａ）に亘って形成されている。 Further, as shown in FIG. 3, the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100 a of the reaction tube 100. The unevenness 103 is formed over substantially the entire inner peripheral surface 100a of the reaction tube 100 (for example, the inner peripheral surface 100a through which the processing gas 600 passes).
　これにより、反応管１００の内周面１００ａの表面積を大きくすることができ、加熱された反応管１００の内周面１００ａに対して処理ガス６００が通過する際に接触する面積を増やすことができる。 Thereby, the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100 can be increased. .
　その結果、処理ガス６００の加熱効率をさらに高めることができ、ガラス基板２０の加熱効率をさらに高めて昇温時間の短縮化をさらに図ることができる。 As a result, the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
　次に、反応管１００の内部の表面（内周面１００ａ）のコーティング材について説明する。 Next, the coating material on the inner surface (inner peripheral surface 100a) of the reaction tube 100 will be described.
　本実施の形態１の処理炉１０の反応管１００は、ステンレス等の金属材料によって形成されている。ステンレス等の金属材料は、石英と比較して加工が容易である。よって、ＣＩＳ系（カルコパイライト系）太陽電池のセレン化処理を行う基板処理装置に用いられるような大型の反応管１００を容易に製造することが可能となる。したがって、反応管１００内に収容できるガラス基板２０の枚数を多くすることができ、ＣＩＳ系太陽電池の製造コストを下げることができる。 The reaction tube 100 of the processing furnace 10 of the first embodiment is made of a metal material such as stainless steel. Metal materials such as stainless steel are easier to process than quartz. Therefore, it is possible to easily manufacture a large reaction tube 100 used in a substrate processing apparatus that performs selenization processing of CIS (chalcopyrite) solar cells. Therefore, the number of glass substrates 20 that can be accommodated in the reaction tube 100 can be increased, and the manufacturing cost of the CIS solar cell can be reduced.
　さらに、本実施の形態１では、反応管１００の少なくとも処理室３０内の雰囲気に曝される表面（内周面１００ａ）は、図４に示すように、図１の反応管１００の基材１０１となるステンレス等の金属材料の上に、ステンレス等の金属材料と比較してセレン化耐性の高いコーティング膜１０２が形成されている。一般的に広く用いられているステンレス等の金属材料は、Ｈ2Ｓｅ等のガスが２００℃以上に加熱されると、非常に高い反応性により腐食してしまうが、本実施の形態１のようにセレン化耐性の高いコーティング膜１０２を形成することにより、Ｈ2Ｓｅ等のガスによる腐食を抑制できる。 Further, in the first embodiment, the surface (inner peripheral surface 100a) exposed to at least the atmosphere in the processing chamber 30 of the reaction tube 100 is the base material 101 of the reaction tube 100 of FIG. 1, as shown in FIG. A coating film 102 having higher selenization resistance than a metal material such as stainless steel is formed on a metal material such as stainless steel. Generally, a metal material such as stainless steel, which is widely used, is corroded due to extremely high reactivity when a gas such as H 2 Se is heated to 200 ° C. or more. By forming the coating film 102 having a high resistance to selenization, corrosion by a gas such as H 2 Se can be suppressed.
　その結果、一般的に広く用いられているステンレス等の金属材料を用いることができ、基板処理装置の製造コストを下げることが可能となる。なお、このセレン化耐性の高いコーティング膜１０２としては、セラミックを主成分とするコーティング膜１０２、例えば、酸化クロム（ＣｒxＯy：ｘ，ｙは１以上の任意数）、アルミナ（ＡｌxＯy：ｘ，ｙは１以上の任意数）、シリカ（ＳｉxＯy：ｘ，ｙは１以上の任意数）のそれぞれ単独あるいは混合物、または、炭素を主成分とするコーティング膜１０２、例えば、炭化珪素（ＳｉＣ）、ダイヤモンドライクカーボン（ＤＬＣ）が挙げられる。 As a result, a metal material such as stainless steel that is generally widely used can be used, and the manufacturing cost of the substrate processing apparatus can be reduced. As the coating film 102 having high selenization resistance, a coating film 102 containing ceramic as a main component, for example, chromium oxide (Cr x O y : x, y is an arbitrary number of 1 or more), alumina (Al x O y : x, y is an arbitrary number of 1 or more), silica (Si x O y : x, y is an arbitrary number of 1 or more), respectively, or a coating film 102 containing carbon as a main component, for example, Examples thereof include silicon carbide (SiC) and diamond-like carbon (DLC).
　また、本実施の形態１のコーティング膜１０２は、ポーラス状の膜で形成されている。これにより、反応管１００のステンレス等の金属材料で形成される基材１０１とコーティング膜１０２との線膨張係数の違いによる熱膨張・収縮に柔軟に追従することが可能となる。その結果、熱処理を繰り返し行ったとしても、コーティング膜１０２への亀裂の発生を最小限に抑えることができる。なお、コーティング膜１０２は、２～２００μｍ、望ましくは５０～１２０μｍの厚さで形成するのが望ましい。また、基材１０１とコーティング膜１０２との線膨張係数の偏差が２０％以下、望ましくは、５％以下とするのが望ましい。 Further, the coating film 102 of the first embodiment is formed of a porous film. Thereby, it becomes possible to flexibly follow the thermal expansion / contraction due to the difference in linear expansion coefficient between the base material 101 formed of a metal material such as stainless steel of the reaction tube 100 and the coating film 102. As a result, even if the heat treatment is repeated, the occurrence of cracks in the coating film 102 can be minimized. The coating film 102 is desirably formed to a thickness of 2 to 200 μm, preferably 50 to 120 μm. Further, the deviation of the linear expansion coefficient between the substrate 101 and the coating film 102 is 20% or less, preferably 5% or less.
　また、シールキャップ１１０、マニホールド１２０、ガス供給管３００、及び排気管３１０も同様にセレン化源に曝される部分に上述のコーティング膜１０２を形成しても良い。ただし、Ｏリング等を保護するために冷却手段により２００℃以下に冷却されている部分は、ステンレス等の金属材料がセレン化源と接触しても反応しないため、コーティング膜１０２を形成しなくても良い。 Also, the above-described coating film 102 may be formed on the seal cap 110, the manifold 120, the gas supply pipe 300, and the exhaust pipe 310 in the same manner at portions exposed to the selenization source. However, since the portion cooled to 200 ° C. or less by the cooling means to protect the O-ring or the like does not react even when a metal material such as stainless steel comes into contact with the selenization source, the coating film 102 is not formed. Also good.
　次に、本実施の形態１の処理炉１０を備える基板処理装置を用いた基板処理方法について説明する。 Next, a substrate processing method using the substrate processing apparatus including the processing furnace 10 according to the first embodiment will be described.
　ここでは、図１及び図２に示すような、内部の閉塞された一方の側部に電動ファン５００が設けられた筒状の反応管１００を有した処理炉１０を備える基板処理装置において、一例として、ＣＩＧＳ（C:Cu(Copper)、Ｉ:ln(lndium)、G:Ga(Gallium)、S:Se(Selenium)）系の太陽電池の製造プロセスでセレン化処理を行う場合を説明する。 Here, as shown in FIGS. 1 and 2, an example of a substrate processing apparatus including a processing furnace 10 having a cylindrical reaction tube 100 provided with an electric fan 500 on one side portion closed inside is shown. The case where the selenization process is performed in a manufacturing process of a CIGS (C: Cu (Copper), I: ln (lndium), G: Ga (Gallium), S: Se (Selenium)) solar cell will be described.
　まず、銅（Ｃｕ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）を含有する積層膜が形成された３０枚から６０枚のガラス基板２０をカセット（ボート）４１０内に配置し、可動性のシールキャップ１１０をマニホールド１２０から外した状態で、カセット４１０を反応管１００の内部である処理室３０内に搬入し、設置台４２０上にセットする（搬入工程）。 First, 30 to 60 glass substrates 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are placed in a cassette (boat) 410, and a movable seal cap is placed. With the 110 removed from the manifold 120, the cassette 410 is loaded into the processing chamber 30 inside the reaction tube 100 and set on the installation table 420 (loading step).
　なお、カセット４１０内においてそれぞれのガラス基板２０は、隣り合った基板と接触しない程度に間隔をあけて立てて配置されている。 In addition, in the cassette 410, each glass substrate 20 is arrange | positioned at intervals so that it may not contact with an adjacent board | substrate.
　また、カセット４１０の処理室３０内への搬入は、例えば、図示しない搬入出装置のアームによりカセット４１０の下部を支持して持ち上げた状態で、カセット４１０を処理室３０内に移動し、所定の位置に到達させた後、当該アームを下方に移動させカセット４１０を設置台４２０に載置することにより行われる。 The cassette 410 is carried into the processing chamber 30 by, for example, moving the cassette 410 into the processing chamber 30 with the lower portion of the cassette 410 supported and lifted by an arm of a loading / unloading device (not shown). After reaching the position, the arm is moved downward and the cassette 410 is placed on the installation table 420.
　その後、シールキャップ１１０を閉めて処理室３０を密閉状態とし、処理室３０の内部の大気を窒素ガス等の不活性ガス（処理ガス６００）で置換する（置換工程）。前記不活性ガスで処理室３０内の雰囲気を置換した後、炉体加熱部２００等のヒータに電力を投入し、所定の昇温速度で反応管１００を加熱する。例えば、４００～５５０℃、望ましくは４５０℃～５５０℃まで、毎分３～１５℃で昇温する。 Thereafter, the seal cap 110 is closed to make the processing chamber 30 sealed, and the atmosphere inside the processing chamber 30 is replaced with an inert gas (processing gas 600) such as nitrogen gas (replacement step). After substituting the atmosphere in the processing chamber 30 with the inert gas, power is supplied to a heater such as the furnace body heating unit 200 and the reaction tube 100 is heated at a predetermined temperature increase rate. For example, the temperature is raised to 400 to 550 ° C., preferably 450 to 550 ° C. at 3 to 15 ° C. per minute.
　さらに昇温と同時に、電動ファン５００の羽部５１０を動力部５３０により回転させ、反応管１００の内周面１００ａ付近で加熱された処理ガス（不活性ガス）６００をカセット４１０に収容された複数のガラス基板２０それぞれの長辺方向（長手方向）に沿って、かつガラス基板２０間を通過させ、処理ガス６００の熱をガラス基板２０に伝達することによりガラス基板２０を加熱する。 At the same time as the temperature rises, the blades 510 of the electric fan 500 are rotated by the power unit 530, and a plurality of processing gases (inert gases) 600 heated in the vicinity of the inner peripheral surface 100 a of the reaction tube 100 are accommodated in the cassette 410. The glass substrate 20 is heated by passing through the glass substrate 20 along the long side direction (longitudinal direction) of each glass substrate 20 and transferring the heat of the processing gas 600 to the glass substrate 20.
　なお、ガラス基板２０は基板内の温度差が大きくなると破損するため、温度差が大きくならないように反応管１００の昇温速度や、隣り合ったガラス基板２０の間を通過させる処理ガス（不活性ガス）６００の流速を適切な値に調節して加熱する。 Since the glass substrate 20 is damaged when the temperature difference in the substrate increases, the temperature rise rate of the reaction tube 100 or the processing gas that passes between the adjacent glass substrates 20 (inert) so that the temperature difference does not increase. Gas) The flow rate of 600 is adjusted to an appropriate value and heated.
　ここで、本実施の形態１の処理炉１０には、その反応管１００の内部に、円筒形の整流板４３０が設けられており、この円筒形の整流板４３０の内部に複数のガラス基板２０が配置されている。本実施の形態１の円筒形の整流板４３０は、電動ファン５００の羽部５１０による強制対流で生じたガラス基板２０の表面上の処理ガス６００の流れ方向に沿って延在し、かつ複数のガラス基板２０のうちの最外部の位置に配置される基板の表面を覆うように設けられている。 Here, in the processing furnace 10 of the first embodiment, a cylindrical rectifying plate 430 is provided inside the reaction tube 100, and a plurality of glass substrates 20 are provided inside the cylindrical rectifying plate 430. Is arranged. The cylindrical rectifying plate 430 of the first embodiment extends along the flow direction of the processing gas 600 on the surface of the glass substrate 20 generated by the forced convection by the wings 510 of the electric fan 500, and includes a plurality of It is provided so that the surface of the board | substrate arrange | positioned in the outermost position of the glass substrate 20 may be covered.
　すなわち、円筒形の整流板４３０は、羽部５１０の回転によって形成されたガラス基板２０の長辺方向に沿って流れる処理ガス６００の気流Ｐ（処理ガス６００の流れ方向）と、この気流Ｐがシールキャップ１１０の内壁で反転して電動ファン５００の羽部５１０に向かって流れる気流Ｑとを区分けする機能を有しており、羽部５１０に向かう気流Ｑが反応管１００の内周面１００ａに沿って流れるように制御している。 That is, the cylindrical rectifying plate 430 has an airflow P of the processing gas 600 (flowing direction of the processing gas 600) flowing along the long side direction of the glass substrate 20 formed by the rotation of the wing portion 510 and the airflow P. The airflow Q flowing toward the wing portion 510 of the electric fan 500 reverses at the inner wall of the seal cap 110 and flows toward the wing portion 510 of the electric fan 500. It is controlled to flow along.
　つまり、シールキャップ１１０で反転して複数のガラス基板２０の外側において羽部５１０に向かう気流Ｑの流路を狭くし、これによって、気流Ｑが反応管１００の内周面１００ａに沿って流れるように制御している。 That is, the flow path of the air flow Q that is reversed by the seal cap 110 and goes to the wings 510 outside the plurality of glass substrates 20 is narrowed, so that the air flow Q flows along the inner peripheral surface 100 a of the reaction tube 100. Is controlling.
　したがって、電動ファン５００の駆動によって形成された強制対流により、ガラス基板２０の表面に沿って流れる処理ガス（不活性ガス）６００の気流Ｐは、整流板４３０から出た後、シールキャップ１１０の内壁に衝突して反転し、その後、羽部５１０に向かう気流Ｑが整流板４３０の外側の領域で反応管１００の内周面１００ａに沿って流れるように処理ガス６００の流れを整流板４３０が制御する。 Therefore, the airflow P of the processing gas (inert gas) 600 flowing along the surface of the glass substrate 20 by the forced convection formed by driving the electric fan 500 exits the rectifying plate 430 and then the inner wall of the seal cap 110. The flow straightening plate 430 controls the flow of the processing gas 600 so that the air flow Q toward the wing portion 510 flows along the inner peripheral surface 100a of the reaction tube 100 in a region outside the flow straightening plate 430. To do.
　これにより、処理室３０でのガラス基板２０の昇温時の処理ガス６００の流れを安定して循環させることができる。 Thereby, the flow of the processing gas 600 when the glass substrate 20 is heated in the processing chamber 30 can be stably circulated.
　すなわち、反応管１００の内部（処理室３０内）に円筒形の整流板４３０が設けられたことで、電動ファン５００の羽部５１０に向かって流れる処理ガス６００の流路を、反応管１００の内周面１００ａに沿うように狭くすることができ、したがって、この処理ガス６００を加熱された反応管１００の内周面１００ａに沿って流れるように制御することができる。これにより、反応管１００の内部の処理ガス６００の流れの安定化を図ることができる。 That is, since the cylindrical rectifying plate 430 is provided inside the reaction tube 100 (inside the processing chamber 30), the flow path of the processing gas 600 flowing toward the wing portion 510 of the electric fan 500 is changed to the reaction tube 100. Therefore, the processing gas 600 can be controlled so as to flow along the inner peripheral surface 100a of the heated reaction tube 100. Thereby, stabilization of the flow of the processing gas 600 inside the reaction tube 100 can be achieved.
　その結果、処理ガス６００の加熱効率を高めることができ、ガラス基板２０の加熱効率を高めて昇温時間の短縮化を図ることができる。 As a result, the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
　また、処理炉１０には、図３に示すように反応管１００の内周面１００ａに複数の凹凸１０３が形成されており、これにより、反応管１００の内周面１００ａの表面積を大きくすることができるため、加熱された反応管１００の内周面１００ａに対して処理ガス６００が通過する際に接触する面積を増やすことができる。 Further, as shown in FIG. 3, the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100a of the reaction tube 100, thereby increasing the surface area of the inner peripheral surface 100a of the reaction tube 100. Therefore, it is possible to increase the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100.
　その結果、処理ガス６００の加熱効率をさらに高めることができ、ガラス基板２０の加熱効率をさらに高めて昇温時間の短縮化をさらに図ることができる。 As a result, the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
　以上の方法により、ガラス基板２０を加熱し、ガラス基板２０が所定の温度（例えば、後述する４００～５００℃）に昇温した時点で処理室３０内に処理ガス（セレン元素含有ガス（セレン化源））６００を導入してガラス基板２０に成膜処理を行う。 By the above method, the glass substrate 20 is heated, and when the glass substrate 20 is heated to a predetermined temperature (for example, 400 to 500 ° C., which will be described later), the processing gas (selenium element-containing gas (selenium selenization) is contained in the processing chamber 30. Source)) 600 is introduced to perform film formation on the glass substrate 20.
　すなわち、反応管１００を加熱した状態で反応管１００の内部に処理ガス（セレン化源）６００を導入し、その際も、電動ファン５００の羽部５１０により反応管１００の内部の雰囲気をガラス基板２０の表面に沿って強制対流させて、さらに円筒形の整流板４３０によって安定化した気流Ｐ及び気流Ｑを形成し、この状態で複数のガラス基板２０に成膜処理を行う。このセレン化処理によって、それぞれのガラス基板２０にＣＩＳ系太陽電池の光吸収層が形成される（形成工程）。 That is, the processing gas (selenization source) 600 is introduced into the reaction tube 100 while the reaction tube 100 is heated, and also in this case, the atmosphere inside the reaction tube 100 is changed to a glass substrate by the blades 510 of the electric fan 500. The airflow P and airflow Q stabilized by the cylindrical rectifying plate 430 are formed by forced convection along the surface 20, and a film forming process is performed on the plurality of glass substrates 20 in this state. By this selenization process, the light absorption layer of a CIS type solar cell is formed on each glass substrate 20 (formation process).
　成膜処理の終了後、反応管１００の温度を一定速度で降温するとともに、処理室３０内の処理ガス６００を窒素等の不活性ガスで置換する。すなわち、成膜処理の終了後、ガス供給管３００から窒素ガス等の不活性ガスを導入して処理室３０内の雰囲気を置換するとともに、所定温度まで降温する（降温工程）。 After completion of the film forming process, the temperature of the reaction tube 100 is decreased at a constant rate, and the processing gas 600 in the processing chamber 30 is replaced with an inert gas such as nitrogen. That is, after completion of the film forming process, an inert gas such as nitrogen gas is introduced from the gas supply pipe 300 to replace the atmosphere in the processing chamber 30, and the temperature is lowered to a predetermined temperature (temperature lowering step).
　さらに、ガラス基板２０の温度が所定の温度に降温し、かつ処理室３０内の処理ガス６００の窒素ガス等による置換が終了した時点で、シールキャップ１１０を移動させることにより、処理室３０を開口し、その後、図示しない搬入出装置のアームにてカセット４１０を搬出する（搬出工程）ことにより一連の成膜処理が終了する。 Further, when the temperature of the glass substrate 20 is lowered to a predetermined temperature and the replacement of the processing gas 600 in the processing chamber 30 with nitrogen gas or the like is completed, the seal cap 110 is moved to open the processing chamber 30. Thereafter, the cassette 410 is unloaded by the arm of the unloading / unloading apparatus (not shown) (unloading step), and the series of film forming processes is completed.
　なお、一例として、ＣＩＧＳ系の太陽電池の製造プロセスにおいて、ガラス基板２０上に形成したＣｕ（銅）、Ｉｎ（インジウム）、Ｇａ（ガリウム）からなる金属プリカーサ膜（積層膜）をＨ2Ｓｅ（セレン化水素）ガスでＳｅ（セレン）化処理するプロセスでは、処理室３０内に配置されたガラス基板２０の温度を４００～５００℃に保持した状態で２０分から２時間程度で成膜処理を行う。 As an example, in a CIGS solar cell manufacturing process, a metal precursor film (laminated film) made of Cu (copper), In (indium), and Ga (gallium) formed on the glass substrate 20 is formed of H 2 Se ( In the process of performing Se (selenium) conversion with hydrogen selenide gas, film formation is performed in about 20 minutes to 2 hours while the temperature of the glass substrate 20 disposed in the processing chamber 30 is maintained at 400 to 500 ° C. .
　（実施の形態２）
　図５は本発明の実施の形態２の基板処理装置の主要部の構造の一例を示す断面図、図６は図５に示す基板処理装置の円周方向の構造の一例を示す断面図、図７は図６のＢ部の構造を示す拡大部分断面図、図８は本発明の実施の形態２の基板処理装置による効果の一例を示すシミュレーション結果図である。 (Embodiment 2)
FIG. 5 is a sectional view showing an example of the structure of the main part of the substrate processing apparatus according to the second embodiment of the present invention. FIG. 6 is a sectional view showing an example of the structure in the circumferential direction of the substrate processing apparatus shown in FIG. 7 is an enlarged partial cross-sectional view showing the structure of part B of FIG. 6, and FIG. 8 is a simulation result diagram showing an example of the effect of the substrate processing apparatus according to the second embodiment of the present invention.
　本実施の形態２の基板処理装置は、実施の形態１の基板処理装置と同様の処理炉１０を備えたものであるが、本実施の形態２の処理炉１０は、図５及び図６に示すように、反応管１００の上部に複数の電動ファン５００が設けられているものであり、したがって、電動ファン５００の羽部５１０の回転によって生じる強制対流は、反応管１００の上部から下部に向かうものであり、したがって、羽部５１０の回転によって生じる気流Ｒは、ガラス基板２０の短辺方向に沿って流れるものである。 The substrate processing apparatus of the second embodiment includes the same processing furnace 10 as the substrate processing apparatus of the first embodiment, but the processing furnace 10 of the second embodiment is shown in FIGS. As shown, a plurality of electric fans 500 are provided on the upper portion of the reaction tube 100, and therefore forced convection caused by the rotation of the blade portion 510 of the electric fan 500 is directed from the upper portion to the lower portion of the reaction tube 100. Therefore, the airflow R generated by the rotation of the wing portion 510 flows along the short side direction of the glass substrate 20.
　本実施の形態２の処理炉１０では、反応管１００とシールキャップ１１０とで気密に構成可能であり、その反応管１００の上部に複数の電動ファン５００が並んで設けられており、処理室３０の外部に設けた動力部（ファン駆動部）５３０によって羽部（ファン）５１０を回転させることで処理室３０内のガスを攪拌可能な構造となっている。 In the processing furnace 10 of the second embodiment, the reaction tube 100 and the seal cap 110 can be hermetically configured, and a plurality of electric fans 500 are provided side by side on the upper portion of the reaction tube 100. The structure is such that the gas in the processing chamber 30 can be agitated by rotating the wing part (fan) 510 by a power part (fan drive part) 530 provided outside the chamber.
　処理炉１０の構造について詳しく説明すると、処理炉１０は、ステンレス等の金属材料で形成される炉体としての反応管１００を有している。反応管１００は、中空の円筒形状（筒状）をしており、その一端が閉塞し、他端が開口する構造を有している。反応管１００の中空部分により、処理室３０が形成される。反応管１００の開口側には、反応管１００と同心円上に、その両端が開口した円筒形状のマニホールド１２０が設けられている。反応管１００とマニホールド１２０との間には、シール部材としてのＯリング（図示せず）が設けられている。 If the structure of the processing furnace 10 is demonstrated in detail, the processing furnace 10 has the reaction tube 100 as a furnace body formed with metal materials, such as stainless steel. The reaction tube 100 has a hollow cylindrical shape (tubular shape), and has a structure in which one end is closed and the other end is opened. A processing chamber 30 is formed by the hollow portion of the reaction tube 100. On the opening side of the reaction tube 100, a cylindrical manifold 120 having both ends opened concentrically with the reaction tube 100 is provided. An O-ring (not shown) as a seal member is provided between the reaction tube 100 and the manifold 120.
　また、マニホールド１２０の反応管１００が設けられない開口部には、可動性のシールキャップ１１０が設けられている。シールキャップ１１０は、ステンレス等の金属材料で形成され、マニホールド１２０の開口部に、その一部が挿入される凸型形状をしている。可動性のシールキャップ１１０とマニホールド１２０との間には、シール部材としてのＯリング（図示せず）が設けられ、処理を行う際には、シールキャップ１１０が反応管１００の開口側を気密に閉塞する。 In addition, a movable seal cap 110 is provided in the opening portion of the manifold 120 where the reaction tube 100 is not provided. The seal cap 110 is formed of a metal material such as stainless steel and has a convex shape in which a part thereof is inserted into the opening of the manifold 120. An O-ring (not shown) as a seal member is provided between the movable seal cap 110 and the manifold 120. When performing processing, the seal cap 110 seals the opening side of the reaction tube 100 in an airtight manner. Block.
　また、反応管１００の内部には、一例として、銅（Ｃｕ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）を含有する積層膜が形成された複数のガラス基板（例えば、３０～４０枚）２０を保持するカセット４１０を載置するための設置台４２０が設けられている。 Further, inside the reaction tube 100, as an example, a plurality of glass substrates (for example, 30 to 40 sheets) 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are provided. An installation table 420 for placing the cassette 410 to be held is provided.
　設置台４２０は、その一端が反応管１００の内周面１００ａに固定されると共に、反応管１００の中心部にカセット４１０が設置台４２０を介して載置されるように構成されている。 The installation table 420 is configured such that one end thereof is fixed to the inner peripheral surface 100 a of the reaction tube 100 and the cassette 410 is mounted on the center of the reaction tube 100 via the installation table 420.
　カセット４１０は、図５に示されるように、ガラス基板２０の両端に、複数のガラス基板２０を立てた状態で横方向に並んで保持可能な保持部材である。なお、ガラス基板２０がカセット４１０に収容される際には、図６に示すように、隣のガラス基板２０と干渉しないように（接触しないように）間隔をあけて収容される。さらに、図５に示すようにカセット４１０の底の板は、気流Ｒのガスを通り易くするために空洞となっており、Ｄ部に示すようにガラス基板２０をそのエッジ部のみで支える構造となっている。 As shown in FIG. 5, the cassette 410 is a holding member that can hold the glass substrates 20 side by side in a state in which the plurality of glass substrates 20 stand on both ends of the glass substrate 20. In addition, when the glass substrate 20 is accommodated in the cassette 410, as shown in FIG. 6, it accommodates at intervals so that it may not interfere with the adjacent glass substrate 20 (it does not contact). Furthermore, as shown in FIG. 5, the bottom plate of the cassette 410 is hollow to facilitate the passage of the gas of the airflow R, and as shown in the D part, the glass substrate 20 is supported only by its edge part. It has become.
　また、反応管１００の周囲には、一端が閉塞し、かつ他端が開口する中空の円筒形状をした加熱部である炉体加熱部２００が設けられている。さらに、シールキャップ１１０の反応管１００と反対側（外側）の側面には、キャップ加熱部２１０が設けられている。この炉体加熱部２００とキャップ加熱部２１０により反応管１００を介してその内部、すなわち処理室３０内が加熱される。なお、炉体加熱部２００は、図示しない固定部により反応管１００に固定され、キャップ加熱部２１０は、図示しない固定部によりシールキャップ１１０に固定されている。また、シールキャップ１１０やマニホールド１２０には、耐熱性の低いＯリングを保護するため図示しない水冷との冷却手段が設けられる。 Further, around the reaction tube 100, there is provided a furnace body heating unit 200 which is a heating unit having a hollow cylindrical shape with one end closed and the other end opened. Further, a cap heating unit 210 is provided on the side surface (outside) of the seal cap 110 opposite to the reaction tube 100. The interior of the furnace body heating unit 200 and the cap heating unit 210 are heated through the reaction tube 100, that is, the inside of the processing chamber 30. The furnace heating unit 200 is fixed to the reaction tube 100 by a fixing unit (not shown), and the cap heating unit 210 is fixed to the seal cap 110 by a fixing unit (not shown). Further, the seal cap 110 and the manifold 120 are provided with a cooling means (not shown) for water cooling in order to protect the O-ring having low heat resistance.
　なお、マニホールド１２０には、セレン元素含有ガス（セレン化源、処理ガス６００）としての水素化セレン（以下、「Ｈ2Ｓｅ」と呼ぶ）を供給するためのガス供給管３００が設けられており、ガス供給管３００から供給されたＨ2Ｓｅは、ガス供給管３００からマニホールド１２０とシールキャップ１１０との間の間隙を介して処理室３０へ供給される（導入される）。 The manifold 120 is provided with a gas supply pipe 300 for supplying selenium hydride (hereinafter referred to as “H 2 Se”) as a selenium element-containing gas (selenization source, process gas 600). The H 2 Se supplied from the gas supply pipe 300 is supplied (introduced) from the gas supply pipe 300 through the gap between the manifold 120 and the seal cap 110.
　一方、ガス供給管３００の反対側のマニホールド１２０には、排気管３１０が設けられており、処理室３０内の雰囲気は、マニホールド１２０とシールキャップ１１０との間の間隙を介して排気管３１０より排気される。なお、上述の冷却手段により冷却される箇所は、１５０℃以下まで冷却すると、その部分に未反応のセレンが凝縮してしまうため、１５０℃から１７０℃程度に温度制御すると良い。 On the other hand, an exhaust pipe 310 is provided in the manifold 120 on the opposite side of the gas supply pipe 300, and the atmosphere in the processing chamber 30 is from the exhaust pipe 310 through a gap between the manifold 120 and the seal cap 110. Exhausted. It should be noted that when the portion cooled by the above-described cooling means is cooled to 150 ° C. or lower, unreacted selenium is condensed in that portion, so the temperature is preferably controlled from 150 ° C. to about 170 ° C.
　また、本実施の形態２の反応管１００には、複数の電動ファン５００が設けられている。すなわち、図５に示すように反応管１００の上部に複数の電動ファン５００が設けられ、これら電動ファン５００の駆動により、反応管１００の内部の雰囲気をガラス基板２０の表面に沿って強制対流させることができる。複数の電動ファン５００のそれぞれは、回転することにより処理室３０内の対流を形成する羽部５１０と、円筒状の反応管１００の側壁及び炉体加熱部２００の側壁を貫通するように設けられた回転軸部５２０と、炉体加熱部２００の外部に設けられ、かつ回転軸部５２０を回転させる動力部５３０とを有している。さらに、回転軸部５２０と反応管１００及び炉体加熱部２００との間には、保護部材５４０が設けられており、保護部材５４０と回転軸部５２０との間の狭い間隙に窒素パージを行うことにより、回転軸部５２０から動力部５３０に反応ガス（処理ガス６００）が浸入するのを極力抑えるようにしている。 In addition, the reaction tube 100 of the second embodiment is provided with a plurality of electric fans 500. That is, as shown in FIG. 5, a plurality of electric fans 500 are provided on the upper portion of the reaction tube 100, and by driving these electric fans 500, the atmosphere inside the reaction tube 100 is forcibly convected along the surface of the glass substrate 20. be able to. Each of the plurality of electric fans 500 is provided so as to penetrate the blade portion 510 that forms convection in the processing chamber 30 by rotating, the side wall of the cylindrical reaction tube 100, and the side wall of the furnace body heating unit 200. And a power unit 530 that is provided outside the furnace body heating unit 200 and rotates the rotation shaft unit 520. Further, a protective member 540 is provided between the rotary shaft portion 520 and the reaction tube 100 and the furnace body heating portion 200, and a nitrogen purge is performed in a narrow gap between the protective member 540 and the rotary shaft portion 520. This prevents the reaction gas (processing gas 600) from entering the power unit 530 from the rotating shaft unit 520 as much as possible.
　複数の電動ファン５００の回転により、処理室３０内はガラス基板２０の短辺方向（筒状の反応管１００の縦方向（円周断面方向））に沿って流れる処理ガス６００の気流Ｒが形成される。このように、複数の電動ファン５００を動作させ、強制対流をガラス基板２０の短辺方向に沿うようにすることで、ガラス基板２０の面内の温度を均一化するために必要なガスの流速を下げることができる。 By the rotation of the plurality of electric fans 500, an air flow R of the processing gas 600 that flows along the short side direction of the glass substrate 20 (the vertical direction (circumferential cross-sectional direction) of the cylindrical reaction tube 100) is formed in the processing chamber 30. Is done. As described above, by operating the plurality of electric fans 500 and causing the forced convection along the short side direction of the glass substrate 20, the flow velocity of the gas necessary to make the temperature in the surface of the glass substrate 20 uniform. Can be lowered.
　また、本実施の形態２の処理炉１０では、図５及び図６に示すように、処理室３０にカセット４１０の周囲を覆う第１整流板４４０が設けられ、さらに、第１整流板４４０の外側の領域に第２整流板４５０が設けられている。 Moreover, in the processing furnace 10 of this Embodiment 2, as shown in FIG.5 and FIG.6, the 1st baffle plate 440 which covers the circumference | surroundings of the cassette 410 is provided in the process chamber 30, and also, the 1st baffle plate 440 of FIG. A second rectifying plate 450 is provided in the outer region.
　ここで、第１整流板４４０は、反応管１００の内部においてカセット４１０上で立てて配置される複数のガラス基板２０のうちの最外部の位置に配置されるガラス基板２０の表面を覆うとともに、電動ファン５００の強制対流により生じたガラス基板２０の表面上の処理ガス６００の流れ方向（気流Ｒ）に沿って延在し、かつ複数のガラス基板２０の一方の側部も覆っているが、ただし、第１整流板４４０の上部及び下部は、図６に示すようにガスが通過可能なように開口している。 Here, the first rectifying plate 440 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and Although it extends along the flow direction (air flow R) of the processing gas 600 on the surface of the glass substrate 20 generated by forced convection of the electric fan 500, it also covers one side of the plurality of glass substrates 20. However, the upper and lower portions of the first rectifying plate 440 are open so that gas can pass as shown in FIG.
　一方、第２整流板４５０は、図６に示すように、第１整流板４４０と反応管１００の内周面１００ａとの間の領域で、上部の羽部５１０に向かう気流Ｓの流路を狭くして気流Ｓが反応管１００の内周面１００ａに沿って流れるように湾曲状に設けられている。 On the other hand, as shown in FIG. 6, the second rectifying plate 450 has a flow path of the airflow S toward the upper wing portion 510 in a region between the first rectifying plate 440 and the inner peripheral surface 100 a of the reaction tube 100. The airflow S is narrow and provided in a curved shape so as to flow along the inner peripheral surface 100 a of the reaction tube 100.
　なお、第１整流板４４０は、反応管１００の内周面１００ａに取り付けられ、第２整流板４５０は、第１整流板４４０に取り付けられている。 The first rectifying plate 440 is attached to the inner peripheral surface 100a of the reaction tube 100, and the second rectifying plate 450 is attached to the first rectifying plate 440.
　このように第１整流板４４０と第２整流板４５０は、上部に設けられた複数の電動ファン５００の駆動で羽部５１０の回転によって形成された強制対流によるガラス基板２０の短辺方向に沿って流れる気流Ｒと、この気流Ｒが反応管１００の下部の内壁に衝突した後、複数のガラス基板２０の外側（第２整流板４５０と反応管１００の内周面１００ａとの間の領域）で複数の電動ファン５００の羽部５１０に向かって流れる処理ガス６００の気流Ｓとを区分けしている。 As described above, the first rectifying plate 440 and the second rectifying plate 450 are arranged along the short side direction of the glass substrate 20 by the forced convection formed by the rotation of the blade portion 510 by the driving of the plurality of electric fans 500 provided in the upper portion. And the airflow R collides with the inner wall of the lower part of the reaction tube 100 and then the outside of the plurality of glass substrates 20 (region between the second rectifying plate 450 and the inner peripheral surface 100a of the reaction tube 100). The airflow S of the processing gas 600 flowing toward the wings 510 of the plurality of electric fans 500 is separated.
　すなわち、第１整流板４４０と第２整流板４５０は、複数の羽部５１０の回転によって形成されたガラス基板２０の短辺方向に沿って流れる気流Ｒと、この気流Ｒが反応管１００の下部の内周面１００ａに到達した後、複数の電動ファン５００の羽部５１０に向かって流れる気流Ｓとを区分けする機能を有しており、羽部５１０に向かう気流Ｓが反応管１００の内周面１００ａに沿って流れるように制御している。 That is, the first rectifying plate 440 and the second rectifying plate 450 include an air flow R that flows along the short side direction of the glass substrate 20 formed by the rotation of the plurality of blades 510, and the air flow R is the lower part of the reaction tube 100. The airflow S flowing toward the wings 510 of the plurality of electric fans 500 after reaching the inner peripheral surface 100a of the plurality of electric fans 500 has a function of dividing the airflow S toward the wings 510 into the inner periphery of the reaction tube 100. It is controlled to flow along the surface 100a.
　これにより、複数の電動ファン５００の駆動によって形成された強制対流により、ガラス基板２０の短辺方向の表面に沿って流れる処理ガス６００の気流Ｒ（処理ガス６００の流れ方向）は、第１整流板４４０の下部から出た後、反応管１００の下部の内周面１００ａに衝突し、その後、羽部５１０に向かう気流Ｓが第２整流板４５０の外側の領域で反応管１００の内周面１００ａに沿って流れるように処理ガス６００の流れを第１整流板４４０と第２整流板４５０が制御している。 Thereby, the airflow R of the processing gas 600 flowing along the surface in the short side direction of the glass substrate 20 by the forced convection formed by driving the plurality of electric fans 500 (the flow direction of the processing gas 600) is the first rectification. After exiting from the lower part of the plate 440, it collides with the inner peripheral surface 100 a at the lower part of the reaction tube 100, and then the air flow S toward the wing 510 is the inner peripheral surface of the reaction tube 100 in the region outside the second rectifying plate 450. The first rectifying plate 440 and the second rectifying plate 450 control the flow of the processing gas 600 so as to flow along 100a.
　その結果、処理室３０でのガラス基板２０の処理中の処理ガス６００の流れを安定して循環させることができる。 As a result, the flow of the processing gas 600 during the processing of the glass substrate 20 in the processing chamber 30 can be stably circulated.
　つまり、反応管１００の内部（処理室３０内）に第１整流板４４０と第２整流板４５０を設けたことで、複数の電動ファン５００の羽部５１０に向かって流れる処理ガス６００の流路を、反応管１００の内周面１００ａに沿うように狭くすることができ、したがって、複数の羽部５１０に向かって流れる処理ガス６００を、加熱された反応管１００の内周面１００ａに沿って流れるように制御することができる。その結果、反応管１００の内部の処理ガス６００の流れの安定化を図ることができる。 That is, by providing the first rectifying plate 440 and the second rectifying plate 450 inside the reaction tube 100 (in the processing chamber 30), the flow path of the processing gas 600 that flows toward the blades 510 of the plurality of electric fans 500. Can be made narrower along the inner peripheral surface 100a of the reaction tube 100, so that the processing gas 600 flowing toward the plurality of wings 510 can be made to flow along the inner peripheral surface 100a of the heated reaction tube 100. It can be controlled to flow. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
　これにより、処理ガス６００の加熱効率を高めることができ、ガラス基板２０の加熱効率を高めて昇温時間の短縮化を図ることができる。 Thereby, the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
　また、処理炉１０には、実施の形態１と同様に、図７に示すように反応管１００の内周面１００ａに複数の凹凸１０３が形成されている。この凹凸１０３は、反応管１００の内周面１００ａの略全面（例えば、処理ガス６００が通過する内周面１００ａ）に亘って形成されている。 Also, in the processing furnace 10, similarly to the first embodiment, a plurality of irregularities 103 are formed on the inner peripheral surface 100 a of the reaction tube 100 as shown in FIG. The unevenness 103 is formed over substantially the entire inner peripheral surface 100a of the reaction tube 100 (for example, the inner peripheral surface 100a through which the processing gas 600 passes).
　これにより、反応管１００の内周面１００ａの表面積を大きくすることができ、加熱された反応管１００の内周面１００ａに対して処理ガス６００が通過する際に接触する面積を増やすことができる。 Thereby, the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100 can be increased. .
　その結果、処理ガス６００の加熱効率をさらに高めることができ、ガラス基板２０の加熱効率をさらに高めて昇温時間の短縮化をさらに図ることができる。 As a result, the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
　本実施の形態２の基板処理装置のその他の構成については、実施の形態１の基板処理装置と同様であるため、その重複説明は省略する。 The other configuration of the substrate processing apparatus according to the second embodiment is the same as that of the substrate processing apparatus according to the first embodiment, and a duplicate description thereof is omitted.
　次に、本実施の形態２の処理炉１０を備える基板処理装置を用いた基板処理方法について説明する。 Next, a substrate processing method using a substrate processing apparatus including the processing furnace 10 according to the second embodiment will be described.
　ここでは、図５及び図６に示すような、上部に複数の電動ファン５００が設けられた筒状の反応管１００を有した処理炉１０を備える基板処理装置において、一例として、ＣＩＧＳ系の太陽電池の製造プロセスでセレン化処理を行う場合を説明する。 Here, as shown in FIG. 5 and FIG. 6, as an example, in a substrate processing apparatus including a processing furnace 10 having a cylindrical reaction tube 100 provided with a plurality of electric fans 500 at the top, a CIGS solar system A case where the selenization process is performed in the battery manufacturing process will be described.
　まず、銅（Ｃｕ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）を含有する積層膜が形成された３０枚から６０枚のガラス基板２０をカセット（ボート）４１０内に配置し、可動性のシールキャップ１１０をマニホールド１２０から外した状態で、カセット４１０を反応管１００の内部である処理室３０内に搬入し、設置台４２０上にセットする（搬入工程）。 First, 30 to 60 glass substrates 20 on which a laminated film containing copper (Cu), indium (In), and gallium (Ga) is formed are placed in a cassette (boat) 410, and a movable seal cap is placed. With the 110 removed from the manifold 120, the cassette 410 is loaded into the processing chamber 30 inside the reaction tube 100 and set on the installation table 420 (loading step).
　なお、カセット４１０内においてそれぞれのガラス基板２０は、図６に示すように隣り合った基板と接触しない程度に間隔をあけて立てて配置されている。 In addition, in the cassette 410, each glass substrate 20 is arrange | positioned at intervals so that it may not contact with an adjacent board | substrate, as shown in FIG.
　また、カセット４１０の処理室３０内への搬入は、例えば、図示しない搬入出装置のアームによりカセット４１０の下部を支持して持ち上げた状態で、カセット４１０を処理室３０内に移動し、所定の位置に到達させた後、当該アームを下方に移動させカセット４１０を設置台４２０に載置することにより行われる。 The cassette 410 is carried into the processing chamber 30 by, for example, moving the cassette 410 into the processing chamber 30 with the lower portion of the cassette 410 supported and lifted by an arm of a loading / unloading device (not shown). After reaching the position, the arm is moved downward and the cassette 410 is placed on the installation table 420.
　その後、シールキャップ１１０を閉めて処理室３０を密閉状態とし、処理室３０の内部の大気を窒素ガス等の不活性ガス（処理ガス６００）で置換する（置換工程）。前記不活性ガスで処理室３０内の雰囲気を置換した後、炉体加熱部２００等のヒータに電力を投入し、所定の昇温速度で反応管１００を加熱する。例えば、４００～５５０℃、望ましくは４５０℃～５５０℃まで、毎分３～１５℃で昇温する。 Thereafter, the seal cap 110 is closed to make the processing chamber 30 sealed, and the atmosphere inside the processing chamber 30 is replaced with an inert gas (processing gas 600) such as nitrogen gas (replacement step). After substituting the atmosphere in the processing chamber 30 with the inert gas, power is supplied to a heater such as the furnace body heating unit 200 and the reaction tube 100 is heated at a predetermined temperature increase rate. For example, the temperature is raised to 400 to 550 ° C., preferably 450 to 550 ° C. at 3 to 15 ° C. per minute.
　さらに昇温と同時に、電動ファン５００の羽部５１０を動力部５３０により回転させ、反応管１００の内周面１００ａ付近で加熱された処理ガス（不活性ガス）６００をカセット４１０に収容された複数のガラス基板２０それぞれの短辺方向に沿って、かつガラス基板２０間を通過させ、処理ガス６００の熱をガラス基板２０に伝達することによりガラス基板２０を加熱する。 At the same time as the temperature rises, the blades 510 of the electric fan 500 are rotated by the power unit 530, and a plurality of processing gases (inert gases) 600 heated in the vicinity of the inner peripheral surface 100 a of the reaction tube 100 are accommodated in the cassette 410. The glass substrate 20 is heated by passing through the glass substrates 20 along the short side direction of each glass substrate 20 and transferring the heat of the processing gas 600 to the glass substrate 20.
　なお、ガラス基板２０は基板内の温度差が大きくなると破損するため、温度差が大きくならないように反応管１００の昇温速度や、隣り合ったガラス基板２０の間を通過させる処理ガス（不活性ガス）６００の流速を適切な値に調節して加熱する。 Since the glass substrate 20 is damaged when the temperature difference in the substrate increases, the temperature rise rate of the reaction tube 100 or the processing gas that passes between the adjacent glass substrates 20 (inert) so that the temperature difference does not increase. Gas) The flow rate of 600 is adjusted to an appropriate value and heated.
　ここで、本実施の形態２の処理炉１０には、その反応管１００の内部に、カセット４１０の周囲を覆う第１整流板４４０が設けられ、さらに、第１整流板４４０の外側の領域に第２整流板４５０が設けられている。 Here, in the processing furnace 10 of the second embodiment, a first rectifying plate 440 that covers the periphery of the cassette 410 is provided inside the reaction tube 100, and further, in a region outside the first rectifying plate 440. A second rectifying plate 450 is provided.
　ここで、第１整流板４４０は、反応管１００の内部においてカセット４１０上で立てて配置される複数のガラス基板２０のうちの最外部の位置に配置されるガラス基板２０の表面を覆うとともに、電動ファン５００の強制対流により生じたガラス基板２０の表面上の処理ガス６００の流れ方向（気流Ｒ）に沿って延在し、かつ複数のガラス基板２０の一方の側部も覆っているが、ただし、第１整流板４４０の上部及び下部は、図６に示すようにガスが通過可能なように開口している。 Here, the first rectifying plate 440 covers the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20 arranged upright on the cassette 410 inside the reaction tube 100, and Although it extends along the flow direction (air flow R) of the processing gas 600 on the surface of the glass substrate 20 generated by forced convection of the electric fan 500, it also covers one side of the plurality of glass substrates 20. However, the upper and lower portions of the first rectifying plate 440 are open so that gas can pass as shown in FIG.
　一方、第２整流板４５０は、図６に示すように、第１整流板４４０と反応管１００の内周面１００ａとの間の領域で、上部の羽部５１０に向かう気流Ｓの流路を狭くして気流Ｓが反応管１００の内周面１００ａに沿って流れるように湾曲状に設けられている。 On the other hand, as shown in FIG. 6, the second rectifying plate 450 has a flow path of the airflow S toward the upper wing portion 510 in a region between the first rectifying plate 440 and the inner peripheral surface 100 a of the reaction tube 100. The airflow S is narrow and provided in a curved shape so as to flow along the inner peripheral surface 100 a of the reaction tube 100.
　このように第１整流板４４０と第２整流板４５０は、上部に設けられた複数の電動ファン５００の駆動で羽部５１０の回転によって形成された強制対流によるガラス基板２０の短辺方向に沿って流れる気流Ｒと、この気流Ｒが反応管１００の下部の内壁に衝突した後、複数のガラス基板２０の外側（第２整流板４５０と反応管１００の内周面１００ａとの間の領域）で複数の電動ファン５００の羽部５１０に向かって流れる処理ガス６００の気流Ｓとを区分けしている。 As described above, the first rectifying plate 440 and the second rectifying plate 450 are arranged along the short side direction of the glass substrate 20 by the forced convection formed by the rotation of the blade portion 510 by the driving of the plurality of electric fans 500 provided in the upper portion. And the airflow R collides with the inner wall of the lower part of the reaction tube 100 and then the outside of the plurality of glass substrates 20 (region between the second rectifying plate 450 and the inner peripheral surface 100a of the reaction tube 100). The airflow S of the processing gas 600 flowing toward the wings 510 of the plurality of electric fans 500 is separated.
　すなわち、第１整流板４４０と第２整流板４５０は、複数の羽部５１０の回転によって形成されたガラス基板２０の短辺方向に沿って流れる気流Ｒと、この気流Ｒが反応管１００の下部の内周面１００ａに到達した後、複数の電動ファン５００の羽部５１０に向かって流れる気流Ｓとを区分けする機能を有しており、羽部５１０に向かう気流Ｓが反応管１００の内周面１００ａに沿って流れるように制御している。したがって、羽部５１０の回転で送風された処理ガス６００は第１整流板４４０によりそのほとんどがガラス基板２０の間を短辺方向に沿って気流Ｒとして通過し、さらにガラス基板２０を抜けて反応管１００の下部の内周面１００ａに到達した後は、気流Ｓとして第２整流板４５０により反応管１００の内周面１００ａに沿って流れ、ガラス基板２０を加熱するための効果的な流れを形成する。 That is, the first rectifying plate 440 and the second rectifying plate 450 include an air flow R that flows along the short side direction of the glass substrate 20 formed by the rotation of the plurality of blades 510, and the air flow R is the lower part of the reaction tube 100. The airflow S flowing toward the wings 510 of the plurality of electric fans 500 after reaching the inner peripheral surface 100a of the plurality of electric fans 500 has a function of dividing the airflow S toward the wings 510 into the inner periphery of the reaction tube 100. It is controlled to flow along the surface 100a. Therefore, most of the processing gas 600 blown by the rotation of the wing portion 510 passes through the first rectifying plate 440 as an air flow R along the short side direction between the glass substrates 20 and further reacts through the glass substrate 20. After reaching the inner peripheral surface 100a at the lower part of the tube 100, the air flow S flows along the inner peripheral surface 100a of the reaction tube 100 by the second rectifying plate 450, and an effective flow for heating the glass substrate 20 is generated. Form.
　これにより、処理室３０でのガラス基板２０の昇温時の処理ガス６００の流れを安定して循環させることができる。 Thereby, the flow of the processing gas 600 when the glass substrate 20 is heated in the processing chamber 30 can be stably circulated.
　つまり、反応管１００の内部（処理室３０内）に第１整流板４４０と第２整流板４５０が設けられたことで、複数の電動ファン５００の羽部５１０に向かって流れる処理ガス６００の流路を、反応管１００の内周面１００ａに沿うように狭くすることができ、したがって、この処理ガス６００を加熱された反応管１００の内周面１００ａに沿って流れるように制御することができる。これにより、反応管１００の内部の処理ガス６００の流れの安定化を図ることができる。 That is, since the first rectifying plate 440 and the second rectifying plate 450 are provided inside the reaction tube 100 (in the processing chamber 30), the flow of the processing gas 600 flowing toward the blades 510 of the plurality of electric fans 500 is increased. The path can be narrowed along the inner peripheral surface 100a of the reaction tube 100, and thus the process gas 600 can be controlled to flow along the inner peripheral surface 100a of the heated reaction tube 100. . Thereby, stabilization of the flow of the processing gas 600 inside the reaction tube 100 can be achieved.
　その結果、処理ガス６００の加熱効率を高めることができ、ガラス基板２０の加熱効率を高めて昇温時間の短縮化を図ることができる。 As a result, the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 can be increased, and the temperature raising time can be shortened.
　また、処理炉１０には、図７に示すように反応管１００の内周面１００ａに複数の凹凸１０３が形成されており、これにより、反応管１００の内周面１００ａの表面積を大きくすることができるため、加熱された反応管１００の内周面１００ａに対して処理ガス６００が通過する際に接触する面積を増やすことができる。 Further, as shown in FIG. 7, the processing furnace 10 has a plurality of irregularities 103 formed on the inner peripheral surface 100 a of the reaction tube 100, thereby increasing the surface area of the inner peripheral surface 100 a of the reaction tube 100. Therefore, it is possible to increase the contact area when the processing gas 600 passes through the inner peripheral surface 100a of the heated reaction tube 100.
　その結果、処理ガス６００の加熱効率をさらに高めることができ、ガラス基板２０の加熱効率をさらに高めて昇温時間の短縮化をさらに図ることができる。 As a result, the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
　なお、ガラス基板２０は基板内の温度差が大きくなると破損するため、温度差が大きくならないように反応管１００の昇温速度や、ガラス基板２０間に送風する処理ガス６００の速度を適切な値に調節して加熱する。すなわち、ガラス基板２０の昇温速度および電動ファン５００の送風速度（電動ファン５００の回転数）は、ガラス基板２０の温度分布が悪化しないように適宜調節する。 Since the glass substrate 20 is damaged when the temperature difference in the substrate increases, an appropriate value is set for the temperature increase rate of the reaction tube 100 and the speed of the processing gas 600 blown between the glass substrates 20 so that the temperature difference does not increase. Adjust to heat. That is, the temperature increase rate of the glass substrate 20 and the blowing speed of the electric fan 500 (the number of rotations of the electric fan 500) are adjusted as appropriate so that the temperature distribution of the glass substrate 20 does not deteriorate.
　以上の方法により、ガラス基板２０を加熱し、ガラス基板２０が所定の温度（例えば、後述する４００～５００℃）に昇温した時点で処理室３０内に処理ガス（セレン元素含有ガス（セレン化源））６００を導入してガラス基板２０に成膜処理を行う。 By the above method, the glass substrate 20 is heated, and when the glass substrate 20 is heated to a predetermined temperature (for example, 400 to 500 ° C., which will be described later), the processing gas (selenium element-containing gas (selenium selenization) is contained in the processing chamber 30. Source)) 600 is introduced to perform film formation on the glass substrate 20.
　すなわち、反応管１００を加熱した状態で反応管１００の内部に処理ガス（セレン化源）６００を導入し、その際も、電動ファン５００の羽部５１０により反応管１００の内部の雰囲気をガラス基板２０の表面に沿って強制対流させて、さらに円筒形の整流板４３０によって安定化した気流Ｒ及び気流Ｓを形成し、この状態で複数のガラス基板２０に成膜処理を行う。このセレン化処理によって、それぞれのガラス基板２０にＣＩＳ系太陽電池の光吸収層が形成される（形成工程）。 That is, the processing gas (selenization source) 600 is introduced into the reaction tube 100 while the reaction tube 100 is heated, and also in this case, the atmosphere inside the reaction tube 100 is changed to a glass substrate by the blades 510 of the electric fan 500. Then, forced convection is performed along the surface of 20, and stabilized airflow R and airflow S are formed by the cylindrical rectifying plate 430. In this state, film formation processing is performed on the plurality of glass substrates 20. By this selenization process, the light absorption layer of a CIS type solar cell is formed on each glass substrate 20 (formation process).
　成膜処理の終了後、処理ガス（セレン化源、セレン化水素ガス））６００の供給を停止させ、反応管１００の温度を一定速度で降温するとともに、処理室３０内の処理ガス６００を窒素等の不活性ガスで置換する。すなわち、成膜処理の終了後、ガス供給管３００から窒素ガス等の不活性ガスを導入して処理室３０内の雰囲気を置換するとともに、所定温度まで降温する（降温工程）。 After the film formation process is completed, the supply of the processing gas (selenization source, hydrogen selenide gas) 600 is stopped, the temperature of the reaction tube 100 is lowered at a constant rate, and the processing gas 600 in the processing chamber 30 is nitrogenated. Replace with an inert gas. That is, after completion of the film forming process, an inert gas such as nitrogen gas is introduced from the gas supply pipe 300 to replace the atmosphere in the processing chamber 30, and the temperature is lowered to a predetermined temperature (temperature lowering step).
　さらに、ガラス基板２０の温度が所定の温度に降温し、かつ処理室３０内の処理ガス６００の窒素ガス等による置換が終了した時点で、シールキャップ１１０を移動させることにより、処理室３０を開口し、その後、図示しない搬入出装置のアームにてカセット４１０を搬出する（搬出工程）ことにより一連の成膜処理が終了する。 Further, when the temperature of the glass substrate 20 is lowered to a predetermined temperature and the replacement of the processing gas 600 in the processing chamber 30 with nitrogen gas or the like is completed, the seal cap 110 is moved to open the processing chamber 30. Thereafter, the cassette 410 is unloaded by the arm of the unloading / unloading apparatus (not shown) (unloading step), and the series of film forming processes is completed.
　なお、基板降温時、基板内における温度差が大きくならないように窒素ガスの導入量等の降温条件を調節する。 Note that when the temperature of the substrate is lowered, the temperature lowering conditions such as the amount of nitrogen gas introduced are adjusted so that the temperature difference in the substrate does not increase.
　また、本実施の形態２では、電動ファン５００をガラス基板２０の上部に設けた場合を説明したが、複数の電動ファン５００は、ガラス基板２０の下部に設置してもよい。 In the second embodiment, the case where the electric fan 500 is provided on the upper portion of the glass substrate 20 has been described. However, the plurality of electric fans 500 may be installed on the lower portion of the glass substrate 20.
　次に、図８を用いて、ガラス基板２０の長辺方向（実施の形態１）と短辺方向（実施の形態２）とで、処理ガス６００の流す方向による有意差について説明する。 Next, with reference to FIG. 8, a significant difference between the long side direction (Embodiment 1) and the short side direction (Embodiment 2) of the glass substrate 20 depending on the flow direction of the processing gas 600 will be described.
　図８は、電動ファン５００の位置以外は、同じ構造を有する処理炉１０において、５℃／分の速度で昇温した場合のガラス基板２０間の流速を変化させ、ガラス基板２０の面内の温度差を約３０℃に抑えるために必要な流速をシュミレーションした結果である。 FIG. 8 shows that in the processing furnace 10 having the same structure except for the position of the electric fan 500, the flow rate between the glass substrates 20 when the temperature is raised at a rate of 5 ° C./min is changed. It is the result of simulating the flow rate required to suppress the temperature difference to about 30 ° C.
　図８（ａ）は、実施の形態１のように電動ファン５００を処理炉１０の側部に配置し、ガラス基板２０の表面の処理ガス６００の流れをガラス基板２０の長辺方向とした場合の結果である。図８（ａ－１）は加熱開始後２０分経過した状態であり、図８（ａ－２）は加熱開始後６０分経過した状態を表示している。図中の濃淡の度合いからガラス基板２０の面内の温度差が約３０℃に抑えられているのがわかる。さらに、シュミレーションにより、ガラス基板２０の面内の温度差を約３０℃に抑えるために必要なガスの流速は、１０ｍ／秒であるという結果が得られた。 FIG. 8A shows a case where the electric fan 500 is arranged on the side of the processing furnace 10 as in the first embodiment and the flow of the processing gas 600 on the surface of the glass substrate 20 is in the long side direction of the glass substrate 20. Is the result of FIG. 8A-1 shows a state where 20 minutes have elapsed since the start of heating, and FIG. 8A-2 shows a state where 60 minutes have elapsed since the start of heating. It can be seen from the degree of shading in the figure that the temperature difference in the surface of the glass substrate 20 is suppressed to about 30 ° C. Furthermore, the result that the flow rate of the gas required for suppressing the temperature difference in the plane of the glass substrate 20 to about 30 ° C. by simulation was 10 m / sec.
　一方、図８（ｂ）は、本実施の形態２のように電動ファン５００を処理炉１０の上部に配置し、ガラス基板２０の表面の処理ガス６００の流れをガラス基板２０の短辺方向にした場合の結果である。図８（ｂ－１）は加熱開始後２０分経過した状態であり、図８（ｂ－２）は加熱開始後６０分経過した状態を表示している。図中の濃淡の度合いからガラス基板２０の面内の温度差が約３０℃に抑えられているのがわかる。さらに、シュミレーションにより、ガラス基板２０の面内の温度差を約３０℃に抑えるために必要なガスの流速は、２ｍ／秒であるという結果が得られた。 On the other hand, in FIG. 8B, the electric fan 500 is arranged on the upper part of the processing furnace 10 as in the second embodiment, and the flow of the processing gas 600 on the surface of the glass substrate 20 is directed in the short side direction of the glass substrate 20. This is the result. FIG. 8B-1 shows a state where 20 minutes have elapsed since the start of heating, and FIG. 8B-2 shows a state where 60 minutes have elapsed since the start of heating. It can be seen from the degree of shading in the figure that the temperature difference in the surface of the glass substrate 20 is suppressed to about 30 ° C. Furthermore, the simulation showed that the flow rate of the gas required to suppress the in-plane temperature difference of the glass substrate 20 to about 30 ° C. was 2 m / sec.
　なお、図８（ａ）及び（ｂ）それぞれの左側の図は、加熱２０分後（４００Ｋ＝１２３℃）の状態を示し、右側の図は、加熱６０分後（６００Ｋ＝３２３℃）の状態を示している。 8A and 8B show the state after 20 minutes of heating (400K = 123 ° C.), and the figure on the right side shows the state after 60 minutes of heating (600K = 323 ° C.). Is shown.
　以上、シュミレーションの結果に示されるように、本実施の形態２のように処理ガス６００の流れをガラス基板２０の短辺方向とすることにより、実施の形態１の処理ガス６００の流れをガラス基板２０の長辺方向とすることに比べて、処理ガス６００の流速の大きさを抑える（小さくする）ことが可能となり、ガラス基板２０を大型化することが可能となる。 As described above, as shown in the simulation results, the flow of the process gas 600 in the first embodiment is changed to the glass substrate 20 by setting the flow of the process gas 600 in the short side direction of the glass substrate 20 as in the second embodiment. Compared with the direction of 20 long sides, the flow velocity of the processing gas 600 can be suppressed (reduced), and the glass substrate 20 can be enlarged.
　次に、本実施の形態２の変形例について説明する。図９は本発明の実施の形態２における変形例の基板処理装置の主要部の構造を示す断面図である。 Next, a modification of the second embodiment will be described. FIG. 9 is a cross-sectional view showing the structure of the main part of a substrate processing apparatus according to a modification of the second embodiment of the present invention.
　図９に示す変形例の処理炉１０は、複数のガラス基板２０を保持するカセット４１０を一つのみ載置した構造とは異なり、複数のカセット４１０（ここでは、３つ）を複数のガラス基板２０の表面の長辺方向と平行な方向に並べて配置している構造を示している。 The processing furnace 10 of the modified example shown in FIG. 9 is different from the structure in which only one cassette 410 holding a plurality of glass substrates 20 is placed, and a plurality of cassettes 410 (here, three) are arranged into a plurality of glass substrates. The structure which has been arranged in the direction parallel to the long side direction of the surface of 20 is shown.
　このように、ガラス基板２０を収容するカセット４１０を一列に３つ配置した構造では、反応管１００がさらに横長な形状となり、処理ガス６００の流れが不安定になるが、図９に示すように、複数の電動ファン５００が上部に設けられ、かつ整流板４６０も設けられていることで、各ガラス基板２０の短辺方向に沿って処理ガス６００を流すことができ、その結果、処理ガス６００の流れを安定化させることができる。 As described above, in the structure in which the three cassettes 410 for accommodating the glass substrates 20 are arranged in a row, the reaction tube 100 has a more horizontally long shape and the flow of the processing gas 600 becomes unstable. However, as shown in FIG. In addition, since the plurality of electric fans 500 are provided at the upper portion and the rectifying plate 460 is also provided, the processing gas 600 can be flowed along the short side direction of each glass substrate 20, and as a result, the processing gas 600. Can be stabilized.
　ここで、実施の形態１及び２で説明した処理炉１０では、従来の石英製の反応管を用いるのではなく、ステンレス等の金属材料を反応管１００の基材として用いている。したがって、実施の形態２の処理炉１０のように、処理ガス６００をガラス基板２０の短辺方向に沿って流す構造とすることで、図９に示すように、反応管１００を大型化したとしても、石英製と比較してその成型が容易であり、また、そのコストの増加も石英製と比較して小さい。その結果、一度に処理できるガラス基板２０の数を多くすることができ、ＣＩＳ系太陽電池の製造コストを下げることができる。 Here, in the processing furnace 10 described in the first and second embodiments, a metal material such as stainless steel is used as a base material of the reaction tube 100 instead of a conventional reaction tube made of quartz. Therefore, as shown in FIG. 9, the reaction tube 100 is increased in size by adopting a structure in which the processing gas 600 flows along the short side direction of the glass substrate 20 as in the processing furnace 10 of the second embodiment. However, it is easier to mold than quartz, and its cost increase is small compared to quartz. As a result, the number of glass substrates 20 that can be processed at a time can be increased, and the manufacturing cost of the CIS solar cell can be reduced.
　また、ステンレス等の金属材料を反応管１００の基材として使用することにより、石英製の反応管と比較して、その取り扱いも容易であり、反応管１００を大型化することができる。 Further, by using a metal material such as stainless steel as a base material of the reaction tube 100, it is easy to handle as compared with a quartz reaction tube, and the reaction tube 100 can be enlarged.
　前記実施の形態１及び実施の形態２における本発明では、以下に記す効果のうち少なくとも１つを実現することができる。 In the present invention in the first embodiment and the second embodiment, at least one of the effects described below can be realized.
　（１）反応管１００の内部に、複数のガラス基板２０のうちの最外部の位置に配置されるガラス基板２０の表面を覆う整流板４３０、もしくは第１整流板４４０と第２整流板４５０が設けられたことにより、電動ファン５００に向かって流れる処理ガス６００の流路を反応管１００の内周面１００ａに沿うように狭くすることができ、したがって、この処理ガス６００を加熱された反応管１００の内周面１００ａに沿って流れるように制御することができる。その結果、反応管１００の内部の処理ガス６００の流れの安定化を図ることができる。 (1) Inside the reaction tube 100, there is a rectifying plate 430 covering the surface of the glass substrate 20 arranged at the outermost position among the plurality of glass substrates 20, or the first rectifying plate 440 and the second rectifying plate 450. By being provided, the flow path of the processing gas 600 flowing toward the electric fan 500 can be narrowed along the inner peripheral surface 100a of the reaction tube 100. Therefore, the processing gas 600 is heated to the heated reaction tube. It can control so that it may flow along the internal peripheral surface 100a of 100. As a result, the flow of the processing gas 600 inside the reaction tube 100 can be stabilized.
　（２）反応管１００の内部の処理ガス６００の流れの安定化を図ることができるため、処理ガス６００の加熱効率を高めることができ、ガラス基板２０の加熱効率を高めて昇温時間の短縮化を図ることができる。 (2) Since the flow of the processing gas 600 inside the reaction tube 100 can be stabilized, the heating efficiency of the processing gas 600 can be increased, the heating efficiency of the glass substrate 20 is increased, and the temperature raising time is shortened. Can be achieved.
　（３）反応管１００の内周面１００ａに複数の凹凸１０３が形成されていることにより、反応管１００の内周面１００ａの表面積を大きくすることができ、加熱された反応管１００の内周面１００ａに対して処理ガス６００が通過する際に接触する面積を増やすことができる。その結果、処理ガス６００の加熱効率をさらに高めることができ、ガラス基板２０の加熱効率をさらに高めて昇温時間の短縮化をさらに図ることができる。 (3) By forming the plurality of irregularities 103 on the inner peripheral surface 100a of the reaction tube 100, the surface area of the inner peripheral surface 100a of the reaction tube 100 can be increased, and the inner periphery of the heated reaction tube 100 When the process gas 600 passes through the surface 100a, the area that comes into contact with the surface 100a can be increased. As a result, the heating efficiency of the processing gas 600 can be further increased, the heating efficiency of the glass substrate 20 can be further increased, and the temperature raising time can be further shortened.
　以上、本発明者によってなされた発明を発明の実施の形態に基づき具体的に説明したが、本発明は前記発明の実施の形態に限定されるものではなく、その要旨を逸脱しない範囲で種々変更可能であることは言うまでもない。 As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.
　例えば、前記実施の形態１，２では、銅（Ｃｕ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）が形成された複数のガラス基板をセレン化処理することで説明したが、これに限らず、銅（Ｃｕ）／インジウム（Ｉｎ）や銅（Ｃｕ）／ガリウム（Ｇａ）等が形成された複数のガラス基板をセレン化処理するようにしてもよい。 For example, in Embodiments 1 and 2 described above, a plurality of glass substrates on which copper (Cu), indium (In), and gallium (Ga) are formed have been subjected to selenization treatment. A plurality of glass substrates on which (Cu) / indium (In), copper (Cu) / gallium (Ga), or the like is formed may be selenized.
　また、前記実施の形態１，２では、金属材料との反応性の高いセレン化について言及したが、ＣＩＳ系太陽電池では、セレン化処理に変えて、もしくはセレン化処理の後に硫黄元素含有ガスを供給して硫化処理を行う場合もある。その際も、前記実施の形態２の大型反応炉を用いることにより、一度に硫化処理をできる枚数を増やすことができるため、製造コストの低下を実現できる。 In the first and second embodiments, the selenization having high reactivity with the metal material is mentioned. However, in the CIS solar cell, the sulfur element-containing gas is changed to the selenization treatment or after the selenization treatment. In some cases, the sulfuration treatment may be performed by supplying. Also in that case, by using the large reactor of the second embodiment, the number of sheets that can be subjected to the sulfiding treatment can be increased at one time, so that the manufacturing cost can be reduced.
　また、前記実施の形態１，２では、反応管１００の内周面１００ａに複数の凹凸１０３が全面に亘って設けられている場合を説明したが、内周面１００ａの全面ではなく、一部、例えば、内周面１００ａに対して所定の間隔を設けた状態で複数の凹凸１０３が設けられていてもよい。 Further, in the first and second embodiments, the case where the plurality of irregularities 103 are provided over the entire inner peripheral surface 100a of the reaction tube 100 has been described. For example, the plurality of irregularities 103 may be provided in a state where a predetermined interval is provided with respect to the inner peripheral surface 100a.
　最後に本発明の好ましい主な態様を以下に付記する。 Finally, preferred main aspects of the present invention will be described below.
　（１）筒状に形成され、かつ内部で複数の基板に対して成膜処理が行われる反応管と、前記反応管の内部に前記成膜処理のための処理ガスを導入するガス供給管と、前記反応管の内部の雰囲気を排気する排気管と、前記反応管を加熱する加熱部と、前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させるファンと、前記強制対流により生じた前記基板の表面上の前記処理ガスの流れ方向に沿って延在し、かつ前記複数の基板のうちの最外部の位置に配置される前記基板の表面を覆う整流板と、を有し、前記複数の基板の外側で前記ファンに向かって流れる前記処理ガスを前記反応管の内周面に沿って流れるように制御する基板処理装置。 (1) A reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates, and a gas supply pipe that introduces a processing gas for the film forming process into the reaction tube; An exhaust pipe that exhausts the atmosphere inside the reaction tube, a heating unit that heats the reaction tube, a fan that forces the atmosphere inside the reaction tube along the surface of the substrate, and the forced convection. A rectifying plate that extends along a flow direction of the processing gas on the surface of the generated substrate and covers the surface of the substrate disposed at an outermost position among the plurality of substrates. A substrate processing apparatus for controlling the processing gas flowing toward the fan outside the plurality of substrates to flow along an inner peripheral surface of the reaction tube.
　（２）前記（１）において、前記強制対流による前記処理ガスの流れ方向が、前記基板の短辺方向に沿っている基板処理装置。 (2) The substrate processing apparatus according to (1), wherein a flow direction of the processing gas by the forced convection is along a short side direction of the substrate.
　（３）前記（１）において、前記整流板は円筒形である基板処理装置。 (3) In the above (1), the current plate is a cylindrical substrate processing apparatus.
　（４）筒状に形成され、かつ内部で複数の基板に対して成膜処理が行われる反応管と、前記反応管の内部に前記成膜処理のための処理ガスを導入するガス供給管と、前記反応管の内部の雰囲気を排気する排気管と、前記反応管を加熱する加熱部と、前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させるファンと、を有し、前記反応管の内周面に複数の凹凸が形成されている基板処理装置。 (4) A reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates, and a gas supply pipe that introduces a processing gas for the film forming process into the reaction tube; An exhaust pipe that exhausts the atmosphere inside the reaction tube, a heating unit that heats the reaction tube, and a fan that forcibly convects the atmosphere inside the reaction tube along the surface of the substrate, A substrate processing apparatus, wherein a plurality of irregularities are formed on an inner peripheral surface of the reaction tube.
　（５）内部にファンが設けられた筒状の反応管を備える基板処理装置を用いた基板処理方法であって、（ａ）前記反応管の内部に複数の基板を間隔をあけて配置する工程と、（ｂ）前記反応管を加熱した状態で前記反応管の内部に処理ガスを導入し、前記ファンにより前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させて前記複数の基板に成膜処理を行う工程と、を有し、前記（ｂ）工程において、前記強制対流により生じた前記基板の表面上の前記処理ガスの流れ方向に沿って延在し、かつ前記複数の基板のうちの最外部の位置に配置される前記基板の表面を覆う整流板によって、前記複数の基板の外側で前記ファンに向かって流れる前記処理ガスを前記反応管の内周面に沿って流れるように制御する基板処理方法。 (5) A substrate processing method using a substrate processing apparatus comprising a cylindrical reaction tube provided with a fan inside, wherein (a) a step of arranging a plurality of substrates at intervals in the reaction tube And (b) introducing a processing gas into the reaction tube while the reaction tube is heated, and forcibly convection the atmosphere inside the reaction tube along the surface of the substrate by the fan. Performing a film forming process on the substrate, and extending in the flow direction of the processing gas on the surface of the substrate generated by the forced convection in the step (b), and The processing gas that flows toward the fan outside the plurality of substrates flows along the inner peripheral surface of the reaction tube by a rectifying plate that covers the surface of the substrate disposed at the outermost position of the substrates. Substrate processing method to be controlled.
　本発明は、加熱して基板処理を行う技術に好適である。 The present invention is suitable for a technique for performing substrate processing by heating.
　　１０　処理炉
　　２０　ガラス基板
　　３０　処理室
　１００　反応管
１００ａ　内周面
　１０１　基材
　１０２　コーティング膜
　１０３　凹凸
　１１０　シールキャップ
　１２０　マニホールド
　２００　炉体加熱部
　２１０　キャップ加熱部
　３００　ガス供給管
　３１０　排気管
　４１０　カセット
４１０ａ　フレーム
　４２０　設置台
　４３０　整流板
　４４０　第１整流板
　４５０　第２整流板
　４６０　整流板
　５００　電動ファン
　５１０　羽部
　５２０　回転軸部
　５３０　動力部
　５４０　保護部材
　６００　処理ガス DESCRIPTION OF SYMBOLS 10 Processing furnace 20 Glass substrate 30 Processing chamber 100 Reaction tube 100a Inner peripheral surface 101 Base material 102 Coating film 103 Concavity and convexity 110 Seal cap 120 Manifold 200 Furnace body heating part 210 Cap heating part 300 Gas supply pipe 310 Exhaust pipe 410 Cassette 410a Frame 420 Installation base 430 Current plate 440 First current plate 450 Second current plate 460 Current plate 500 Electric fan 510 Wings 520 Rotating shaft 530 Power unit 540 Protection member 600 Process gas

Claims (5)

  1. 　筒状に形成され、内部で複数の基板に対して成膜処理が行われる反応管と、
    　前記反応管の内部に前記成膜処理のための処理ガスを導入するガス供給管と、
    　前記反応管の内部の雰囲気を排気する排気管と、
    　前記反応管を加熱する加熱部と、
    　前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させるファンと、
    　前記強制対流により生じた前記基板の表面上の前記処理ガスの流れ方向に沿って延在し、前記複数の基板のうちの最外部の位置に配置される前記基板の表面を覆う整流板と、
    　を有し、
    　前記複数の基板の外側で前記ファンに向かって流れる前記処理ガスを前記反応管の内周面に沿って流れるように制御することを特徴とする基板処理装置。     A reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates;
    A gas supply pipe for introducing a processing gas for the film formation process into the reaction tube;
    An exhaust pipe for exhausting the atmosphere inside the reaction tube;
    A heating section for heating the reaction tube;
    A fan for forced convection of the atmosphere inside the reaction tube along the surface of the substrate;
    A rectifying plate that extends along the flow direction of the processing gas on the surface of the substrate generated by the forced convection and covers the surface of the substrate disposed at the outermost position of the plurality of substrates;
    Have
    A substrate processing apparatus, wherein the processing gas that flows toward the fan outside the plurality of substrates is controlled to flow along an inner peripheral surface of the reaction tube.
  2. 前記強制対流による前記処理ガスの流れ方向が、前記基板の短辺方向に沿っている請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein a flow direction of the processing gas by the forced convection is along a short side direction of the substrate.
  3. 前記整流板は円筒形である請求項１記載の基板処理装置。 The substrate processing apparatus according to claim 1, wherein the current plate is cylindrical.
  4. 　筒状に形成され、内部で複数の基板に対して成膜処理が行われる反応管と、
    　前記反応管の内部に前記成膜処理のための処理ガスを導入するガス供給管と、
    　前記反応管の内部の雰囲気を排気する排気管と、
    　前記反応管を加熱する加熱部と、
    　前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させるファンと、
    　を有し、
    　前記反応管の内周面に複数の凹凸が形成されていることを特徴とする基板処理装置。     A reaction tube that is formed in a cylindrical shape and in which a film forming process is performed on a plurality of substrates;
    A gas supply pipe for introducing a processing gas for the film formation process into the reaction tube;
    An exhaust pipe for exhausting the atmosphere inside the reaction tube;
    A heating section for heating the reaction tube;
    A fan for forced convection of the atmosphere inside the reaction tube along the surface of the substrate;
    Have
    A substrate processing apparatus, wherein a plurality of irregularities are formed on an inner peripheral surface of the reaction tube.
  5. 　内部にファンが設けられた筒状の反応管を備える基板処理装置を用いた基板処理方法であって、
    　（ａ）前記反応管の内部に複数の基板を間隔をあけて配置する工程と、
    　（ｂ）前記反応管を加熱した状態で前記反応管の内部に処理ガスを導入し、前記ファンにより前記反応管の内部の雰囲気を前記基板の表面に沿って強制対流させて前記複数の基板に成膜処理を行う工程と、
    　を有し、
    　前記（ｂ）工程において、前記強制対流により生じた前記基板の表面上の前記処理ガスの流れ方向に沿って延在し、かつ前記複数の基板のうちの最外部の位置に配置される前記基板の表面を覆う整流板によって、前記複数の基板の外側で前記ファンに向かって流れる前記処理ガスを前記反応管の内周面に沿って流れるように制御することを特徴とする基板処理方法。     A substrate processing method using a substrate processing apparatus comprising a cylindrical reaction tube provided with a fan inside,
    (A) a step of arranging a plurality of substrates at an interval in the reaction tube;
    (B) A processing gas is introduced into the reaction tube while the reaction tube is heated, and an atmosphere inside the reaction tube is forcedly convected along the surface of the substrate by the fan to form the plurality of substrates. A film forming process;
    Have
    In the step (b), the substrate that extends along the flow direction of the processing gas on the surface of the substrate generated by the forced convection and is disposed at the outermost position among the plurality of substrates. The substrate processing method is characterized in that the processing gas flowing toward the fan outside the plurality of substrates is controlled to flow along the inner peripheral surface of the reaction tube by a rectifying plate covering the surface of the substrate.
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