WO2013089047A1 - 太陽電池モジュールおよび太陽光発電システム - Google Patents
太陽電池モジュールおよび太陽光発電システム Download PDFInfo
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- WO2013089047A1 WO2013089047A1 PCT/JP2012/081875 JP2012081875W WO2013089047A1 WO 2013089047 A1 WO2013089047 A1 WO 2013089047A1 JP 2012081875 W JP2012081875 W JP 2012081875W WO 2013089047 A1 WO2013089047 A1 WO 2013089047A1
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- solar cell
- cell module
- sealing material
- passivation film
- solar
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a solar cell module and a solar power generation system, and more particularly to a solar cell module and a solar power generation system including solar cells having an insulating passivation film on a light receiving surface.
- a solar cell module 1001 connects a plurality of back electrode type solar cells 1010 (hereinafter simply referred to as solar cells 1010) and adjacent solar cells 1010.
- a frame member 1024 (holding member) for holding them.
- a solar cell 1010 includes an n-type silicon substrate 1011 having an n-type current collecting layer 1011a and a p-type current collecting layer 1011b provided on the back surface side, and an upper surface (light receiving surface) side of the silicon substrate 1011.
- a passivation film 1012 provided on the back surface of the silicon substrate 1011 and an n-electrode 1013 provided on the back side of the silicon substrate 1011 and electrically connected to the n-type current collecting layer 1011a and a p-type electrically connected to the p-type current collecting layer 1011b.
- An electrode 1014 In FIG. 12, the n-electrode 1013 and the p-electrode 1014 are omitted.
- Patent Document 1 a solar cell module in which a plurality of back electrode type solar cells are connected is disclosed in Patent Document 1, for example.
- the inventors of the present application have a problem that when the solar cell module 1001 is irradiated with sunlight to generate power, the output of the solar cell module 1001 may decrease (power generation efficiency may decrease). I found. Specifically, as a result of various studies on the solar cell module 1001, the inventor of the present application has found that the output of the solar cell module in which electrodes are provided on the light receiving surface and the back surface that are conventionally used is unlikely to decrease. As the potential difference between the potential of the power generation circuit in the solar cell module 1001 and the potential of the frame member 1024 is larger, the output is more likely to decrease, and a water film is formed on the light receiving surface of the solar cell module 1001 due to rain or the like. We found out that the output is likely to decrease when the
- the inventors of the present application estimated that the output of the solar cell module 1001 was reduced by the following mechanism.
- the light receiving surface side of the solar battery cell 1010 is shown in FIG. A directional electric field E is generated. Then, electrons contained in the light-transmitting substrate 1022 and the sealing material 1021 are collected on the passivation film 1012 side by the electric field E.
- holes should be collected in the direction of the light receiving surface of the silicon substrate 1011, that is, the side where the passivation film 1012 is formed, so as to form a pair with the electrons collected on the light receiving surface of the passivation film 1012. Force is generated.
- the present invention has been made to solve the above-described problems, and an object of the present invention is to reduce the output without complicating the configuration of the solar battery cell, the solar battery module, and the solar power generation system. It is providing the solar cell module and solar power generation system which can suppress this.
- a solar cell module of the present invention includes a solar cell having an insulating passivation film on a light receiving surface, a translucent substrate disposed on the light receiving surface side of the solar cell, and a solar cell.
- a solar cell module including a solar cell panel provided with a sealing material disposed between the cell and the light-transmitting substrate, wherein the cell upper portion located on the light receiving surface of the solar cell is 1.36. It has a sheet resistivity of ⁇ 10 14 ⁇ ⁇ cm 2 or more.
- substrate means a board
- the cell upper portion located on the light receiving surface of the solar cell has a sheet resistivity of 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more. Since the sealing material and the translucent substrate are laminated and disposed on the cell upper portion located on the light receiving surface of the solar battery cell, the sealing material and the translucent substrate located on the cell upper portion are arranged. At least one has an area resistivity of 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more, or the sum of the area resistivity of the sealing material and the area resistivity of the light-transmitting substrate is 1.36 ⁇ 10 14 ⁇ ⁇ What is necessary is just to become cm ⁇ 2 > or more.
- the encapsulant or translucent substrate is a material that is generally insulative, there are a few free electrons in the material, but by increasing the area resistivity, the upper part of the cell The density of free electrons contained in the sealing material or the light-transmitting substrate is further reduced. For this reason, even when a high potential difference is applied across the light receiving surface of the solar battery cell, the amount of electrons to be collected on the passivation film side in the sealing material or the translucent substrate is small. The density of electrons collected on the light receiving surface side (sealing material side) can be reduced.
- the force to collect holes on the side opposite to the light-receiving surface of the passivation film is proportional to the density of electrons collected on the light-receiving surface side (sealing material side) of the passivation film.
- the upper portion of the cell has a sheet resistivity of 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more at 85 ° C.
- a substance generally called an insulator tends to decrease in volume resistivity when the temperature rises. Therefore, by configuring the insulator (sealing material and translucent substrate) in the upper part of the cell so as to have a sheet resistivity of 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more even at 85 ° C., a solar cell Even when the module is used in a high temperature state, it is possible to suppress a decrease in output.
- the solar cell includes an n-type silicon substrate, and an n-electrode and a p-electrode provided on the back surface of the silicon substrate.
- the potential of the solar cell is often higher than the potential of the surroundings (the holding member that holds the translucent substrate or the outside of the solar cell module), and the so-called back surface electrode in which the n electrode and the p electrode are provided on the back surface
- the output of the solar cell module is likely to decrease. Therefore, it is particularly effective when an n-type silicon substrate is used for a so-called back electrode type solar battery cell.
- the solar cell module preferably further includes a conductive holding member that holds the edge of the solar cell panel. Thereby, the rigidity and durability of the solar cell module can be improved easily and inexpensively.
- the forbidden band width of the passivation film is equal to or less than the photon energy contained in the light that passes through the sealing material and reaches the passivation film.
- the passivation film can absorb photon energy contained in the light transmitted by the sealing material, so that electrons in the passivation film can be excited to reach the silicon substrate as a free electron state. That is, the passivation film functions as a conductor, and electrons collected from the sealing material to the light-receiving surface side of the passivation film can flow to the silicon substrate, so that the electrons from the sealing material are received by the light-receiving surface of the passivation film. Accumulation on the side can be suppressed, and a decrease in the output current of the solar battery cell can be prevented.
- the forbidden band width of the passivation film is preferably not more than 3.5 eV.
- the passivation film can absorb light having a wavelength of about 350 nm or more.
- a typical sealing material for a solar cell module is configured to block light having a wavelength shorter than about 350 nm. For this reason, as described above, by setting the forbidden band width of the passivation film to 3.5 eV or less, the passivation film can absorb light having a wavelength of about 350 nm or more, which is light transmitted by the sealing material. .
- the forbidden band width of the passivation film is preferably 3.1 eV or more.
- the forbidden band width of the passivation film is set to 3.1 eV or more, and the passivation film is formed so as to transmit light having a wavelength longer than about 400 nm. Reaches the silicon substrate without being absorbed by the passivation film. Thereby, it can suppress that the electric power generation efficiency of a photovoltaic cell falls by a passivation film.
- the passivation film preferably includes a silicon compound film. If comprised in this way, a passivation film can be formed easily. In addition, since the silicon compound and the silicon substrate have close lattice constants, crystal defects can be prevented from occurring at the interface between the silicon compound (passivation film) and the silicon substrate, and the quality of the passivation film can be improved. it can.
- the passivation film includes an inorganic oxide film. If comprised in this way, a passivation film can be formed easily.
- the solar power generation system of the present invention includes the solar cell module having the above configuration. If comprised in this way, the solar power generation system which can suppress that an output falls will be obtained.
- the solar power generation system preferably includes a conductive holding member that holds the edge of the solar cell panel, the holding member is grounded, and the potential of the output terminal that outputs the generated power of the solar cell module is grounded. Above the potential.
- the holding member has conductivity, the holding member is often grounded to ensure safety against electric shock or the like.
- the output of the solar cell module is likely to decrease. Therefore, this is particularly effective when the conductive holding member that holds the edge of the solar cell panel is grounded and the potential of the output terminal that outputs the generated power of the solar cell module is equal to or higher than the ground potential.
- the solar power generation system includes a plurality of solar cell modules, the holding members of all the solar cell modules are grounded, and the potential of the output terminal that outputs the generated power of the solar cell module is grounded in at least one solar cell module. It may be higher than the potential. Even with such a configuration, it is possible to suppress a decrease in the output of the solar cell module in which the potential at the output end is equal to or higher than the ground potential.
- FIG. 3 is a diagram showing the relationship between power generation time and output in Examples 1 to 3 and Comparative Example 1. It is sectional drawing which showed the structure of the solar cell module by 2nd Embodiment of this invention.
- the solar cell module 1 includes a plurality of back electrode type solar cells 2 (hereinafter simply referred to as solar cells 2) and a plurality of solar cells 2.
- the connecting member 3 connected in series, the sealing material 4 covering the light receiving surface side and the back surface side of the solar cell 2, the translucent substrate 5 and the back surface protection sandwiching the solar cell 2 and the sealing material 4 in the vertical direction
- seat 6 and the frame member 7 (holding member) holding these (solar cell panel 30) are provided.
- a solar battery panel 30 is configured by the plurality of solar battery cells 2, the connection member 3, the sealing material 4, the translucent substrate 5, and the back surface protection sheet 6. For simplification of the drawing, only two solar cells 2 are drawn in FIG. 1, but three or more solar cells 2 may be provided.
- the solar cell 2 includes an n-type silicon substrate 21, an insulating passivation film 22 made of a silicon nitride film formed on the upper surface (light-receiving surface) of the silicon substrate 21, and a passivation film 22.
- An insulating antireflection film 23 made of a silicon nitride film formed thereon, and an n electrode 24 and a p electrode 25 provided on the back surface of the silicon substrate 21 are included.
- the n-electrode 24 and the p-electrode 25 are omitted.
- a texture structure (uneven structure) (not shown) is formed on the upper surface of the silicon substrate 21. Further, a passivation film (not shown) may be provided on the back surface of the silicon substrate 21. In this case, an opening for conducting the n-electrode 24 and the p-electrode 25 may be provided in the passivation film on the back surface.
- the silicon substrate 21 is provided on the n-type region 21 a, the back side of the silicon substrate 21, the n-type current collecting layer 21 b having n-type impurities at a higher concentration than the n-type region 21 a, and the back side of the silicon substrate 21. And a p-type current collecting layer 21c having p-type impurities.
- solar cells 2 When solar cells 2 are irradiated with sunlight, electron-hole pairs are generated, electrons are attracted to the n-type current collecting layer 21b, and holes are attracted to the p-type current collecting layer 21c.
- the n-type current collection layer 21b and the p-type current collection layer 21c are in ohmic contact with the n-electrode 24 and the p-electrode 25, respectively.
- the n electrode 24 and p electrode 25 of the adjacent photovoltaic cell 2 are electrically connected by the connection member 3 (refer FIG. 1), and the several photovoltaic cell 2 is connected in series.
- the connecting member 3 is arranged at the output end 3a connected to the n electrode 24 of the solar battery cell 2 arranged at one end (low potential side) and at the other end (high potential side).
- an output end 3 b connected to the p-electrode 25 of the solar battery cell 2.
- the output ends 3a and 3b are provided to output the generated power of the solar cell module 1 (a plurality of solar cells 2).
- the passivation film 22 has a higher refractive index than the antireflection film 23.
- the passivation film 22 may be formed of a silicon compound film such as a silicon oxide film or a silicon carbide film instead of the silicon nitride film.
- the passivation film 22 may be formed of a dielectric film having a passivation effect that suppresses surface recombination of carriers (electrons and holes).
- the antireflection film 23 can be formed of various oxide films such as a silicon oxide film and a titanium oxide film instead of the silicon nitride film. Further, the antireflection film 23 can be formed of another film having an antireflection effect in combination with the passivation film 22.
- the sealing material 4 is disposed between the solar battery cell 2 and the translucent substrate 5, and adheres the solar battery cell 2 and the translucent substrate 5. Moreover, the sealing material 4 is arrange
- positioned below are formed of the same resin.
- the cell upper part 4a (the part enclosed with the broken line of FIG.
- positioned above the photovoltaic cell 2 and the connection member 3 of the sealing material 4 is formed of one layer.
- the sealing material 4 is formed using, for example, an insulating resin that is transparent to sunlight.
- the cell upper portion 4a of the sealing material 4 has an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more at room temperature (about 23 ° C.).
- a material having a volume resistivity of about 3.4 ⁇ 10 15 ⁇ ⁇ cm or more at normal temperature (about 23 ° C.) is sealed. It can be used for the stopper 4.
- the resin generally has a tendency that the volume resistivity decreases as the temperature rises.
- the cell upper part 4a of the sealing material 4 of the solar cell module 1 has an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more even at 85 ° C. Since the sealing material 4 is often in a state of being properly cured by heat treatment or the like, and is often hardly deformed due to temperature, if the thickness of the sealing material 4 does not change with temperature, the sealing material 4 is about even at 85 ° C.
- a material having a volume resistivity of 3.4 ⁇ 10 15 ⁇ ⁇ cm or more can be used for the sealing material 4. As a result, it is possible to suppress a decrease in output even when a solar cell module that can be exposed to a general outdoor climate for a long period of time becomes a high temperature state.
- a silicone resin such as OE-6336 manufactured by Dow Corning
- a silicone resin such as OE-6336 manufactured by Dow Corning
- blending and composition of ethylene vinyl acetate resin currently widely used, or a thing with a high volume resistivity, such as an olefin resin, can also be used.
- a crosslinking accelerator or an ultraviolet absorber may be added to the resin constituting the sealing material 4.
- the translucent substrate 5 is formed using, for example, a glass substrate or PC (polycarbonate resin) that is transparent to sunlight, but is not particularly limited as long as it is transparent to sunlight.
- PC polycarbonate resin
- a sheet material made of a weather-resistant film that has been conventionally used can be used as the back surface protective sheet 6.
- a sheet material made of a weather resistant film for example, an insulating film such as a PET (polyethylene terephthalate) film can be used.
- a glass substrate may be used instead of the back surface protective sheet 6.
- the frame member 7 holds the entire periphery of the edge of the solar cell panel 30 via the insulating end face sealing member 8.
- the end surface sealing member 8 has water-stopping and elasticity, and the end surface of the solar cell panel 30 (the end surfaces (outer peripheral surfaces) of the translucent substrate 5, the sealing material 4, and the back surface protection sheet 6) and the frame member 7. It is arranged between.
- the frame member 7 is made of a metal such as aluminum and has conductivity.
- the frame member 7 is combined, for example, in a rectangular shape with a window portion formed in the center as viewed in plan. Moreover, the frame member 7 has a U-shaped cross section as shown in FIG.
- the frame member 7 includes a locking portion 7a that is locked to the upper surface 5a of the translucent substrate 5, a back surface locking portion 7b that is locked to the back surface of the back surface protection sheet 6, and a locking portion 7a and a back surface locking portion 7b.
- the side wall part 7c which connects these.
- the frame member 7 is grounded via a wiring or the like (not shown) in order to ensure safety against electric shock or the like. Further, although the potentials of the output terminal 3a and the output terminal 3b are determined by the state of the connected load, in the present embodiment, the potentials of the output terminal 3a and the output terminal 3b are higher than the ground potential. Even so, it is possible to suppress a decrease in the output of the solar cell module 1 (a decrease in power generation efficiency).
- the solar power generation system may include a plurality of solar cell modules 1.
- the potential of the output terminal 3a and the output terminal 3b may be equal to or higher than the ground potential in all the solar cell modules 1, and the potential of the output terminal 3b in one (at least one) solar cell module 1 It may be higher than the ground potential.
- the cell upper portion 4a of the sealing material 4 has an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more.
- the density of free electrons per unit area is lowered. For this reason, as shown in FIG. 3, even when a high potential difference is applied across the light receiving surface of the solar battery cell 2, the amount of free electrons collected on the passivation film 22 side in the sealing material 4 is small. The density of electrons collected on the light receiving surface side (sealing material 4 side) of the passivation film 22 is reduced.
- the force to collect holes on the side opposite to the light receiving surface side of the passivation film 22 is proportional to the density of electrons collected on the light receiving surface side (sealing material 4 side) of the passivation film 22. Therefore, by reducing the density of electrons collected on the light receiving surface side (sealing material 4 side) of the passivation film 22, it is possible to suppress movement of holes generated in the silicon substrate 21 to the passivation film 22 side. . Thereby, it can suppress that the output of the solar cell module 1 falls (power generation efficiency falls).
- the output of the solar cell module 1 can be maintained over a long period (for example, 10 years or more).
- the potential of the solar battery cell 2 is higher than that of the surroundings (outside of the frame member 7 and the solar battery module 1), and the n-type silicon substrate 21 is used for the back electrode type solar battery cell 2.
- the output of the solar cell module 1 is likely to decrease. This is particularly effective when the n-type silicon substrate 21 is used.
- the potential of the solar battery cell 2 is lower than that of the surroundings (outside of the frame member 7 and the solar battery module 1) and the p-type silicon substrate 21 is used for the back electrode type solar battery cell 2.
- the output of the solar cell module 1 is likely to decrease.
- the cell upper portion 4a located on the light receiving surface of the solar battery cell 2 of the sealing material 4 has a sheet resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more, so that the solar battery It is possible to suppress a decrease in the output of the module 1.
- the cell upper portion 4a preferably has a sheet resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more at 85 ° C.
- the insulating property (area resistivity) of the substance (sealing material 4) tends to decrease.
- the cell upper portion 4a is configured to have an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more even at 85 ° C., so that the solar cell module 1 can be operated. Even if the temperature rises to a temperature that can be assumed, the output can be prevented from decreasing.
- the volume resistivity inherent to the sealing material 4 and the sealing can be realized by appropriately combining the thickness of the cell upper portion 4a of the stopper 4.
- OE-6336 silicone resin manufactured by Dow Corning has a volume resistivity of 4 ⁇ 10 16 ⁇ ⁇ cm, this resin is placed on the upper part of the cell so that the thickness is 0.5 mm.
- the sheet resistivity of the cell upper portion 4a of the sealing material 4 can be 2 ⁇ 10 15 ⁇ ⁇ cm 2 .
- the output of the solar cell module 1 is reduced. It's easy to do. For this reason, it is particularly effective when the potential of the output terminals 3a and 3b of the solar cell module 1 is equal to or higher than the ground potential.
- the photovoltaic power generation system includes a plurality of solar cell modules 1 and the potentials of the output terminals 3a and 3b in the at least one solar cell module 1 are equal to or higher than the ground potential.
- Example 1 an olefin resin having a volume resistivity of about 7.3 ⁇ 10 16 ⁇ ⁇ cm at 23 ° C. and a volume resistivity of about 3.4 ⁇ 10 15 ⁇ ⁇ cm at 85 ° C. is used.
- the sealing material 4 was formed.
- the thickness of the cell upper portion 4a of the sealing material 4 was about 0.4 mm.
- the cell upper portion 4a of the sealing material 4 has an area resistivity of about 2.92 ⁇ 10 15 ⁇ ⁇ cm 2 at 23 ° C., and about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 at 85 ° C.
- the sheet resistivity is as follows.
- the other structure of Example 1 was the same as that of the solar cell module 1 described above.
- Example 2 an olefin resin having a volume resistivity of about 1.3 ⁇ 10 17 ⁇ ⁇ cm at 23 ° C. and a volume resistivity of about 3.4 ⁇ 10 15 ⁇ ⁇ cm at 85 ° C. is used.
- the sealing material 4 was formed.
- the thickness of the cell upper portion 4a of the sealing material 4 was about 0.4 mm.
- the cell upper portion 4a of the sealing material 4 has a sheet resistivity of about 5.2 ⁇ 10 15 ⁇ ⁇ cm 2 at 23 ° C. and about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 at 85 ° C.
- the sheet resistivity is as follows.
- the other structure of Example 2 was the same as that of Example 1.
- Example 3 an olefin resin having a volume resistivity of about 1.5 ⁇ 10 17 ⁇ ⁇ cm at 23 ° C. and a volume resistivity of about 3.2 ⁇ 10 14 ⁇ ⁇ cm at 85 ° C. is used.
- the sealing material 4 was formed.
- the thickness of the cell upper portion 4a of the sealing material 4 was about 0.4 mm.
- the cell upper portion 4a of the sealing material 4 has an area resistivity of about 6 ⁇ 10 15 ⁇ ⁇ cm 2 at 23 ° C. and an area of about 1.28 ⁇ 10 13 ⁇ ⁇ cm 2 at 85 ° C. Has resistivity.
- Other structures of Example 3 were the same as those of Example 1.
- Comparative Example 1 an ethylene vinyl acetate resin having a volume resistivity of about 2.4 ⁇ 10 14 ⁇ ⁇ cm at 23 ° C. and a volume resistivity of about 1.2 ⁇ 10 12 ⁇ ⁇ cm at 85 ° C. An encapsulant was formed using this.
- the thickness of the upper part of the cell of the sealing material was about 0.4 mm. Thereby, the cell upper part of the sealing material has an area resistivity of about 9.6 ⁇ 10 12 ⁇ ⁇ cm 2 at 23 ° C. and an area of about 4.8 ⁇ 10 10 ⁇ ⁇ cm 2 at 85 ° C. Has resistivity.
- the other structure of Comparative Example 1 was the same as that of Example 1.
- the output (generated power) with respect to the power generation time was measured. Specifically, a voltage of +600 V was applied to the solar cell with reference to the light receiving surface of the solar cell module (the upper surface 5a of the translucent substrate 5), and the output after a predetermined time elapsed from the start of power generation was measured. In addition, experiments were conducted for the case where the ambient temperature was about 23 ° C and about 85 ° C. Then, normalization was performed by setting the output immediately after the start of power generation (after the lapse of 0 hours) to 1. The output immediately after the start of power generation (after the lapse of 0 hours) was measured without applying a voltage of + 600V. The result is shown in FIG.
- Example 1 As shown in FIG. 4, in Example 1 and Example 2, there was almost no decrease in output over time.
- Example 3 when the ambient temperature was about 23 ° C., almost no decrease in output over time was observed, and when the ambient temperature was about 85 ° C., output decreased over time.
- Comparative Example 1 the output decreased with time.
- the decrease in output after about 20 hours was less than 0.5% when the ambient temperature was about 23 ° C. and about 85 ° C.
- Example 3 when the ambient temperature was about 23 ° C., the output did not decrease after about 20 hours. On the other hand, when the ambient temperature was about 85 ° C., the output decreased by about 14.2% after about 20 hours.
- Comparative Example 1 when the ambient temperature was about 23 ° C., the output decreased by about 25.3% after about 20 hours. Further, when the ambient temperature was about 85 ° C., the output decreased by about 25.9% after about 20 hours. In Comparative Example 1, even when the ambient temperature was about 23 ° C., the output decreased by about 19.7% after about 7 hours.
- Example 3 the output did not decrease when the ambient temperature was about 23 ° C, and the output decreased when the temperature was about 85 ° C. In Comparative Example 1, the output decreased.
- Table 1 shows whether or not the output decreased after about 20 hours for the above experiment.
- the sealing material 104 is formed of, for example, ethylene vinyl acetate resin.
- an upper cell portion 105b (a portion surrounded by a broken line in FIG. 5) located on the light receiving surface of the solar battery cell 2 is about 1.36 ⁇ 10 14 at room temperature (about 23 ° C.). It has a sheet resistivity of ⁇ ⁇ cm 2 or more.
- the translucent substrate 105 is about 4.25 ⁇ 10 14 ⁇ at room temperature (about 23 ° C.). It is preferable to have a volume resistivity of cm or more.
- the upper cell portion 105b of the translucent substrate 105 preferably has an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more at 85 ° C., and the translucent substrate 105 has an area resistivity of about 4. It is preferable to have a volume resistivity of 25 ⁇ 10 14 ⁇ ⁇ cm or more.
- the translucent substrate 105 can have a sheet resistivity of 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more at 85 ° C. by using, for example, glass or polycarbonate resin.
- glass non-alkali glass such as NA35 manufactured by HOYA Corporation can be used.
- polycarbonate resin Panlite manufactured by Teijin Chemicals Ltd. can be used.
- the sheet resistivity can be increased.
- a light-transmitting insulating member such as PET may be sandwiched between two general glass plates. With such a structure, it is possible to increase the area resistivity of the light-transmitting substrate 105 only with an inexpensive material, and in addition to the laminated glass structure, when the glass plate is broken, It is possible to suppress the debris from being scattered.
- the translucent substrate 105 has an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more, so that per unit area in the cell upper portion 105 b of the translucent substrate 105.
- the density of free electrons becomes low. For this reason, as shown in FIG. 6, even when a high potential difference is applied across the light receiving surface of the solar battery cell 2, it gathers on the passivation film 22 side (sealing material 104 side) in the translucent substrate 105. The density of free electrons is reduced. Since the sealing material 104 and the light transmitting substrate 105 are electrically connected in series, the density of electrons moving through the sealing material 104 is equal to the density of electrons moving through the light transmitting substrate 105. Become.
- the density of electrons moving through the translucent substrate 105 is reduced as in the first embodiment. Therefore, it is possible to suppress the movement of holes generated in the silicon substrate 21 to the passivation film 22 side. Thereby, it can suppress that the output of the solar cell module 101 falls (power generation efficiency falls).
- the present invention can be described as follows including the first and second embodiments described above. That is, the area resistivity of the upper part of the cell is sufficiently larger than the area resistivity of the passivation film 22, and the resistance of the upper part of the cell absorbs the potential difference applied from the outside of the module across the light receiving surface of the solar battery cell. In this way, the voltage applied to the passivation film 22 is reduced, and an inversion layer is prevented from being generated at the interface between the passivation film 22 and the silicon substrate 21.
- the surface of the silicon substrate 21 is applied to the passivation film 22 when a voltage (inversion voltage) higher than a predetermined level is applied so that the silicon substrate 21 side has a high voltage.
- a p-type inversion layer is formed. Therefore, as a result of dividing the potential difference with the silicon substrate 21 applied from the outside of the module by the area resistivity of the upper portion of the cell and the area resistivity of the passivation film 22, the voltage applied to the passivation film 22 is higher than the above-described inversion voltage. You can make it low.
- the result is a result of examination under a predetermined cell and applied voltage conditions.
- an example using an n-type silicon substrate has been described.
- the present invention is not limited to this, and a p-type silicon substrate may be used.
- the present invention is not limited to this. Even when using solar cells in which electrodes are provided on each of the light receiving surface and the back surface, the output of the solar cell module may decrease, so electrodes are provided on each of the light receiving surface and the back surface. It is also effective to apply the present invention to a solar cell module using solar cells.
- the sealing material 204 to be disposed may be formed using a different resin.
- the sealing material 204 disposed on the lower side of the solar battery cell 2 and the connection member 3 may not be transparent to sunlight, and may be about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more. It does not have to have sheet resistivity. Such a configuration is particularly effective when the sealing material 4 is expensive.
- a sealing material The upper part of the cell and the other part may be formed of different resins.
- the part other than the upper part of the cell of the sealing material may not have an area resistivity of about 1.36 ⁇ 10 14 ⁇ ⁇ cm 2 or more.
- the intensity of the electric field generated around the light receiving surface of the solar cell arranged on the side where the potential difference from the outside of the module is large is generated around the light receiving surface of the solar cell arranged on the side where the potential difference from the outside of the module is small. Higher than the strength of the electric field. For this reason, when, for example, 10 solar cells are connected in series, only the sealing material for sealing, for example, 5 solar cells arranged on the side where the potential difference from the outside of the module is large is about 1.36. It may be formed so as to have a sheet resistivity of ⁇ 10 14 ⁇ ⁇ cm 2 or more.
- the frame member has an example of conductivity.
- the holding member may be formed of an insulating member, for example. If comprised in this way, since it can suppress that the intensity
- the holding member may be formed of a conductive member (metal) and an insulating member.
- a sealing material is a solar cell. It may be only in contact with the cell and the translucent substrate. Moreover, as long as the sealing material is arrange
- the antireflection film is provided on the passivation film.
- the present invention is not limited to this, and the antireflection film may be omitted.
- the solar cell module 301 includes a plurality of back electrode type solar cells 2 (hereinafter simply referred to as solar cells 2) and a plurality of solar cells 2.
- the connecting member 3 connected in series, the sealing material 4 covering the light receiving surface side and the back surface side of the solar cell 2, the translucent substrate 5 and the back surface protection sandwiching the solar cell 2 and the sealing material 4 in the vertical direction
- seat 6 and the frame member 7 (holding member) holding these (solar cell panel 30) are provided.
- a solar battery panel 30 is configured by the plurality of solar battery cells 2, the connection member 3, the sealing material 4, the translucent substrate 5, and the back surface protection sheet 6. For simplification of the drawing, only two solar cells 2 are drawn in FIG. 8, but three or more solar cells 2 may be provided.
- the solar battery cell 2 is provided on an n-type silicon substrate 21, an insulating passivation film 22 formed on the upper surface (light-receiving surface) of the silicon substrate 21, and the back surface of the silicon substrate 21.
- an n electrode 24 and a p electrode 25 are included.
- the n-electrode 24 and the p-electrode 25 are omitted.
- the insulating passivation film 22 is directly formed on the light receiving surface side of the silicon substrate 21. That is, the passivation film 22 and the silicon substrate 21 are in contact with each other.
- a texture structure (uneven structure) (not shown) is formed on the upper surface of the silicon substrate 21. Further, a passivation film (not shown) may be provided on the back surface of the silicon substrate 21. In this case, an opening for conducting the n-electrode 24 and the p-electrode 25 may be provided in the passivation film on the back surface.
- the silicon substrate 21 is provided on the n-type region 21 a, the back side of the silicon substrate 21, the n-type current collecting layer 21 b having n-type impurities at a higher concentration than the n-type region 21 a, and the back side of the silicon substrate 21. And a p-type current collecting layer 21c having p-type impurities.
- solar cells 2 When solar cells 2 are irradiated with sunlight, electron-hole pairs are generated, electrons are attracted to the n-type current collecting layer 21b, and holes are attracted to the p-type current collecting layer 21c.
- the n-type current collection layer 21b and the p-type current collection layer 21c are in ohmic contact with the n-electrode 24 and the p-electrode 25, respectively.
- the n electrode 24 and the p electrode 25 of the adjacent photovoltaic cell 2 are electrically connected by the connection member 3 (refer FIG. 8), and the several photovoltaic cell 2 is connected in series.
- the connecting member 3 is arranged at the output end 3a connected to the n electrode 24 of the solar battery cell 2 arranged at one end (low potential side) and at the other end (high potential side).
- an output end 3 b connected to the p-electrode 25 of the solar battery cell 2.
- the output ends 3a and 3b are provided to output the generated power of the solar cell module 301 (a plurality of solar cells 2).
- the silicon substrate 21 is made of crystalline silicon. Therefore, for example, as shown in FIG. 4 of JP-A-2002-231324, the solar battery cell 2 has sensitivity to light having a wavelength of about 400 nm or more and about 1100 nm or less, and is about 400 nm or less. It has almost no sensitivity to light of the wavelength.
- the passivation film 22 has a forbidden band width equal to or less than the photon energy contained in the light that passes through the sealing material 4 and reaches the passivation film 22.
- the sealing material 4 is formed so as to transmit light including photon energy larger than the forbidden band width of the passivation film 22.
- the forbidden band width of the passivation film 22 is preferably, for example, about 3.1 eV or more and about 3.5 eV or less.
- the passivation film 22 can absorb light having a wavelength of about 350 nm or more transmitted through the sealing material 4.
- the forbidden band width of the passivation film 22 can transmit light having a wavelength longer than about 400 nm (can reach the silicon substrate 21). .
- a passivation film 22 As such a passivation film 22, an SiC film (forbidden band width of about 3.26 eV), a TiO 2 film (forbidden band width of about 3.5 eV), or the like can be used.
- a silicon nitride film As long as a silicon nitride film is used conventionally, a film whose band gap is controlled to about 3.1 eV or more and about 3.5 eV or less by adjusting the nitrogen composition ratio or the like can be used.
- any insulator can be used as the passivation film 22 of the present invention as long as the so-called internal photoelectric effect is caused by light having a wavelength of about 350 nm or more. It is.
- the passivation film 22 does not absorb light having a wavelength longer than about 400 nm.
- the SiC film and the silicon nitride film whose forbidden band width is controlled to be about 3.1 eV or more and about 3.5 eV or less are examples of the “silicon compound film” of the present invention.
- the TiO 2 film is an example of the “inorganic oxide film” in the present invention.
- the sealing material 4 is disposed between the solar battery cell 2 and the translucent substrate 5, and adheres the solar battery cell 2 and the translucent substrate 5. Moreover, the sealing material 4 is arrange
- FIG. The sealing material 4 is formed using, for example, an insulating resin that is transparent to sunlight.
- the sealing material 4 can be formed of ethylene vinyl acetate resin or other resins.
- the sealing material 4 has the characteristic which interrupts
- the sealing material 4 may be formed of different resins on the light receiving surface side and the back surface side of the solar battery cell 2. In this case, the sealing material 4 disposed on the back surface side of the solar battery cell 2 may have a spectral transmission characteristic different from that of the sealing material 4 disposed on the light receiving surface side of the solar battery cell 2.
- the translucent substrate 5 is formed using, for example, a glass substrate transparent to sunlight or PC (polycarbonate resin). Although the material of the translucent substrate 5 is not particularly limited, the translucent substrate 5 is not limited to light having a wavelength of about 400 nm or more and about 1100 nm or less, as in a general translucent substrate, and the passivation film 22 in the present invention. Also transmits light having a wavelength that can be absorbed by (for example, near ultraviolet light having a wavelength of about 350 nm to about 400 nm).
- a sheet material made of a weather-resistant film that has been conventionally used can be used as the back surface protective sheet 6.
- a sheet material made of a weather resistant film for example, an insulating film such as a PET (polyethylene terephthalate) film can be used.
- a glass substrate may be used instead of the back surface protective sheet 6.
- the frame member 7 holds the entire periphery of the edge of the solar cell panel 30 via the insulating end face sealing member 8.
- the end surface sealing member 8 has water-stopping and elasticity, and the end surface of the solar cell panel 30 (the end surfaces (outer peripheral surfaces) of the translucent substrate 5, the sealing material 4, and the back surface protection sheet 6) and the frame member 7. It is arranged between.
- the frame member 7 is made of a metal such as aluminum and has conductivity. If the frame member 7 is made of, for example, aluminum, the durability can be improved and the weight can be reduced.
- the frame member 7 is configured in a rectangular shape with a window portion formed in the center portion when seen in a plan view. Moreover, the frame member 7 has a U-shaped cross section as shown in FIG.
- the frame member 7 is positioned above the upper surface 5 a of the light-transmitting substrate 5 that serves as the light receiving surface of the solar cell panel 30, and holds the upper surface of the solar cell panel 30. It includes a back surface holding portion 7b that is located below and holds the lower surface of the solar cell panel 30, and a side wall portion 7c that connects the upper surface holding portion 7a and the back surface holding portion 7b.
- the frame member 7 is grounded via a wiring (not shown) or the like in order to ensure safety against electric shock.
- the potentials of the output terminal 3a and the output terminal 3b are determined by the state of the connected load, in this embodiment, the potentials of the output terminal 3a and the output terminal 3b are higher than the ground potential. Assumes that
- the solar power generation system may include a plurality of solar cell modules 301.
- the potential of the output terminal 3a and the output terminal 3b may be equal to or higher than the ground potential in all the solar cell modules 301, and the potential of the output terminal 3b in one (at least one) solar cell module 301. It may be higher than the ground potential.
- the passivation film 22 absorbs light having a wavelength of about 350 nm or more transmitted through the sealing material 4. can do.
- the passivation film 22 in the passivation film 22, electrons that normally fill the valence band and cannot move are excited to the conduction band beyond the forbidden band and excited to the valence band. Holes are generated so as to pair with the electrons, and the electrons and holes can move along the electric field. That is, the passivation film 22 behaves in electrical conductivity due to the internal photoelectric effect caused by the light absorption by the passivation film 22. As a result, as shown in FIG.
- a conventional passivation film often uses a silicon oxide film (forbidden band width of about 9 eV) or a silicon nitride film (forbidden band width of about 5 to 6 eV).
- a silicon oxide film having a forbidden band width of about 9 eV can only absorb light having a wavelength of about 140 nm or less
- a silicon nitride film having a forbidden band width of about 5 to 6 eV can only absorb light having a wavelength of about 210 nm to about 250 nm or less. Since light having a wavelength of about 250 nm or less is blocked by a general sealing material (or air) as described above, it does not reach the passivation film. For this reason, in the conventional solar cell module, the electrons of the passivation film cannot be excited.
- the forbidden band width of the passivation film 22 is equal to or less than the photon energy contained in the light that passes through the sealing material 4 and reaches the passivation film 22.
- the passivation film 22 can absorb the photon energy contained in the light transmitted through the sealing material 4.
- the fact that the passivation film 22 can absorb photon energy means that electrons that normally fill the valence band and cannot move are excited to the conduction band by light.
- holes are generated in the valence band with the excitation of electrons. As a result, electrons moved to the conduction band and holes generated in the valence band can move along the electric field as carriers.
- the passivation film 22 is an insulator, electrons can pass through the carrier generated in the passivation film 22 as if it were a conductor. Therefore, electrons gathered from the sealing material 4 on the light-receiving surface side of the passivation film 22 can pass through the silicon substrate 21 without being accumulated near the boundary with the passivation film 22. As a result, the potential (electric field) applied between the light receiving surface side (sealing material 4 side) of the passivation film 22 and the silicon substrate 21 side is reduced, and as a result, holes generated in the silicon substrate 21 are transferred to the passivation film 22. Since it can suppress moving to the side, it can suppress that the output of the solar cell module 301 falls (power generation efficiency falls).
- an electrode or a conductive layer may be provided on the light receiving surface of the passivation film 22.
- the conductivity due to the internal photoelectric effect of the passivation film 22 is It may not be uniform in the solar cell plane.
- the conductive layer for example, a film made conductive by mixing metal fine particles such as silver in a silicon nitride film or the like can be used. In this case, it is possible to provide an antireflection function by controlling the film thickness and film quality.
- the forbidden band width of the passivation film 22 is about 3.5 eV or less.
- the passivation film 22 can absorb light having a wavelength of about 350 nm or more.
- An ultraviolet absorber is added to the sealing material 4, and the sealing material 4 is configured to block light having a wavelength shorter than about 350 nm. Therefore, as described above, by setting the forbidden band width of the passivation film 22 to about 3.5 eV or less, the passivation film 22 absorbs light having a wavelength of about 350 nm or more, which is light transmitted through the sealing material 4. can do.
- the forbidden band width of the passivation film 22 is about 3.1 eV or more. Thereby, the passivation film 22 can transmit light having a wavelength longer than about 400 nm.
- the relative spectral sensitivity characteristic of the solar battery cell 2 using crystalline silicon has almost no sensitivity to light having a wavelength of 400 nm or less.
- the forbidden band width of the passivation film 22 is set to about 3.1 eV or more, and the passivation film 22 is formed so as to transmit light having a wavelength longer than about 400 nm.
- the light having the wavelength reaches the silicon substrate 21 without being absorbed by the passivation film 22. Thereby, it can suppress that the electric power generation efficiency of the photovoltaic cell 2 falls by the passivation film 22.
- the passivation film 22 is formed of, for example, a SiC film having a forbidden band width of about 3.26 eV, light having a wavelength of about 350 nm or more and about 380 nm or less of the light transmitted through the sealing material 4 is emitted. It can be absorbed by the passivation film 22. Further, by forming the passivation film 22 with a silicon compound such as a SiC film, the passivation film 22 made of a silicon compound can be easily formed by doping the silicon substrate 21 with an additive.
- the silicon compound and the silicon substrate 21 have close lattice constants, it is possible to suppress the occurrence of crystal defects at the interface between the silicon compound (passivation film 22) and the silicon substrate 21 and to improve the quality as a passivation film. Can be made.
- the passivation film 22 is formed of, for example, a TiO 2 film having a forbidden band width of about 3.5 eV, light having a wavelength of about 350 nm or more and about 354 nm or less of the light transmitted through the sealing material 4. Can be absorbed by the passivation film 22.
- the n-type silicon substrate 21 is added to the back electrode type solar cell 2. Is likely to cause a decrease in the output of the solar cell module 301. For this reason, it is particularly effective for a photovoltaic power generation system having such a combination.
- the potential of the solar battery cell 2 is lower than the potential of the surroundings (outside of the frame member 7 and the solar battery module 301) and the p-type silicon substrate is used for the back electrode type solar battery cell 2, the solar battery module. Since the output of 301 is likely to decrease, the present invention is effective.
- the frame member 7 In the photovoltaic power generation system, the frame member 7 is often grounded for safety reasons, and on the other hand, the potentials of the output terminals 3a and 3b that output the generated power of the solar cell module 301 are connected to the load (power). It is often determined by the specifications and operating conditions of the conditioner. Therefore, it is often difficult to arbitrarily set the relationship between the potential of the solar battery cell 2 and the surrounding (outside of the frame member 7 or the solar battery module 301) in the solar power generation system. According to this embodiment, even if it is a case where it becomes a potential relationship where the fall of the output of the solar cell module 301 as mentioned above tends to generate
- the photovoltaic power generation system includes a plurality of solar cell modules 301 and the potentials of the output terminals 3a and 3b in the at least one solar cell module 301 are equal to or higher than the ground potential. Even in such a configuration, since the output of a solar cell module in which the potential of the output terminal is equal to or higher than the ground potential may decrease, by applying this embodiment to at least the corresponding solar cell module, the solar cell module It becomes possible to suppress the fall of the output of a battery module.
- the present invention is not limited to this, and a p-type silicon substrate may be used.
- the output of the solar cell module 301 is likely to decrease. For this reason, it is particularly effective when the potential of the output terminals 3a and 3b of the solar cell module 301 is equal to or lower than the ground potential.
- the said 3rd Embodiment demonstrated the case where the photovoltaic cell was a back surface electrode type, this invention is not limited to this. Even when using solar cells in which electrodes are provided on each of the light receiving surface and the back surface, the output of the solar cell module may decrease, so electrodes are provided on each of the light receiving surface and the back surface. It is also effective to apply the present invention to a solar cell module using solar cells.
- the forbidden band width of the passivation film is set to 3.1 eV or more and 3.5 eV or less.
- the forbidden band width of the passivation film may be larger than 3.5 eV as long as it is less than or equal to the photon energy contained in the light that passes through the sealing material and reaches the passivation film.
- the sealing material transmits light having a wavelength shorter than about 350 nm
- the forbidden band width of the passivation film may be larger than 3.5 eV.
- the forbidden band width of the passivation film may be smaller than 3.1 eV.
- the holding member may be formed of, for example, an insulating member. If comprised in this way, since it can suppress that the intensity
- the holding member may be formed of a conductive member (metal) and an insulating member.
- an antireflection film may be provided on the passivation film.
- the antireflection film may be formed to a thickness smaller than that of the passivation film.
- the antireflection film can be formed using various oxide films such as a silicon nitride film, a silicon oxide film, or a titanium oxide film. Further, the antireflection film can be formed of another film having an antireflection effect in combination with the passivation film.
- an electrode or a conductive layer may be provided on the passivation film.
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Abstract
Description
まず、図1~図3を参照して、本発明の第1実施形態による太陽電池モジュール1の構造について説明する。なお、図面簡略化のため、太陽電池セルの数を省略して描いている。
第2実施形態の太陽電池モジュール101では図5に示すように、封止材104は例えばエチレンビニルアセテート樹脂などにより形成されている。
図8~図11を参照して、本発明の第3実施形態による太陽電池モジュール301の構造について説明する。なお、図面簡略化のため、太陽電池セルの数を省略して描いている。
2 裏面電極型太陽電池セル(太陽電池セル)
3a、3b 出力端
4、104 封止材
4a セル上部分
5、105 透光性基板
105b セル上部分
7 枠部材(保持部材)
21 シリコン基板
22 パッシベーション膜
24 n電極
25 p電極
30 太陽電池パネル
Claims (15)
- 受光面に絶縁性のパッシベーション膜を有する太陽電池セルと、
前記太陽電池セルの受光面側に配置される透光性基板と、
前記太陽電池セルおよび前記透光性基板の間に配置される封止材と、
を備えた太陽電池パネルを含む太陽電池モジュールであって、
前記太陽電池セルの受光面上に位置するセル上部分は、1.36×1014Ω・cm2以上の面積抵抗率を有することを特徴とする太陽電池モジュール。 - 前記セル上部分は、85℃において1.36×1014Ω・cm2以上の面積抵抗率を有することを特徴とする請求項1に記載の太陽電池モジュール。
- 前記セル上部分は、23℃において2.92×1015Ω・cm2以上の面積抵抗率を有することを特徴とする請求項2に記載の太陽電池モジュール。
- 前記セル上部分は、23℃以上85℃以下の領域において、面積抵抗率が1.36×1014Ω・cm2以上、6×1015Ω・cm2以下であることを特徴とする請求項1~3のいずれか1項に記載の太陽電池モジュール。
- 前記封止材が1.36×1014Ω・cm2以上の面積抵抗率を有することを特徴とする請求項1~4のいずれか1項に記載の太陽電池モジュール。
- 前記太陽電池セルの受光面側とは反対側に配置される裏面封止材をさらに備え、該裏面封止材は前記封止材と同じ材質であることを特徴とする請求項5に記載の太陽電池モジュール。
- 前記太陽電池セルの受光面側とは反対側に配置される裏面封止材をさらに備え、該裏面封止材は1.36×1014Ω・cm2未満の面積抵抗率を有することを特徴とする請求項5に記載の太陽電池モジュール。
- 前記透光性基板が1.36×1014Ω・cm2以上の面積抵抗率を有することを特徴とする請求項1~4のいずれか1項に記載の太陽電池モジュール。
- 前記太陽電池セルは、n型のシリコン基板と、前記シリコン基板の裏面に設けられたn電極およびp電極とを含むことを特徴とする請求項1~8のいずれか1項に記載の太陽電池モジュール。
- 前記太陽電池パネルの縁部を保持する導電性の保持部材をさらに備えることを特徴とする請求項1~9のいずれか1項に記載の太陽電池モジュール。
- 前記パッシベーション膜の禁制帯幅は、前記封止材を透過して前記パッシベーション膜に到達する光に含まれる光子エネルギー以下であることを特徴とする請求項1~10のいずれか1項に記載の太陽電池モジュール。
- 前記パッシベーション膜の禁制帯幅は3.5eV以下であることを特徴とする請求項11に記載の太陽電池モジュール。
- 請求項1~12のいずれか1項に記載の太陽電池モジュールを備えることを特徴とする太陽光発電システム。
- 前記太陽電池パネルの縁部を保持する導電性の保持部材を備え、
前記保持部材は接地されており、
前記太陽電池モジュールの発電電力を出力する出力端の電位は接地電位以上であることを特徴とする請求項13に記載の太陽光発電システム。 - 前記太陽電池モジュールを複数備え、
全ての前記太陽電池モジュールの前記保持部材は接地されており、
少なくとも1つの前記太陽電池モジュールにおいて前記太陽電池モジュールの発電電力を出力する出力端の電位は接地電位以上であることを特徴とする請求項13に記載の太陽光発電システム。
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CN201290001058.2U CN204243056U (zh) | 2011-12-12 | 2012-12-10 | 太阳能电池模块及太阳光发电*** |
US14/364,386 US20150287844A1 (en) | 2011-12-12 | 2012-12-10 | Solar battery module and solar power generation system |
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WO2016111257A1 (ja) * | 2015-01-08 | 2016-07-14 | 日立化成株式会社 | 太陽電池モジュール及びそれに用いられる太陽電池の封止樹脂 |
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US10554072B1 (en) * | 2015-02-26 | 2020-02-04 | Amazon Technologies, Inc. | Initiating commands for in-package device by light-energy |
CN108630763B (zh) * | 2018-06-12 | 2024-02-13 | 苏州阿特斯阳光电力科技有限公司 | 一种光电转换装置及其制备方法 |
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2012
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- 2012-12-10 WO PCT/JP2012/081875 patent/WO2013089047A1/ja active Application Filing
- 2012-12-10 JP JP2013549242A patent/JPWO2013089047A1/ja active Pending
- 2012-12-10 CN CN201290001058.2U patent/CN204243056U/zh not_active Expired - Lifetime
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US20150287844A1 (en) | 2015-10-08 |
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