WO2013084676A1 - 有機トランジスタ及びその製造方法 - Google Patents
有機トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- WO2013084676A1 WO2013084676A1 PCT/JP2012/079454 JP2012079454W WO2013084676A1 WO 2013084676 A1 WO2013084676 A1 WO 2013084676A1 JP 2012079454 W JP2012079454 W JP 2012079454W WO 2013084676 A1 WO2013084676 A1 WO 2013084676A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulating layer
- organic semiconductor
- semiconductor layer
- organic
- base insulating
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 114
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 173
- 238000004381 surface treatment Methods 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 36
- 238000011282 treatment Methods 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 41
- 229910002367 SrTiO Inorganic materials 0.000 claims description 21
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 7
- 239000000470 constituent Substances 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 125000005582 pentacene group Chemical group 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 285
- 239000010409 thin film Substances 0.000 description 22
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 18
- 239000013078 crystal Substances 0.000 description 16
- 239000011810 insulating material Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 10
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000007646 gravure printing Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000007645 offset printing Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910002115 bismuth titanate Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 238000007611 bar coating method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007607 die coating method Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 230000000415 inactivating effect Effects 0.000 description 3
- 230000002779 inactivation Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 238000007649 pad printing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 229910021523 barium zirconate Inorganic materials 0.000 description 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- LCGWNWAVPULFIF-UHFFFAOYSA-N strontium barium(2+) oxygen(2-) Chemical compound [O--].[O--].[Sr++].[Ba++] LCGWNWAVPULFIF-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KSSJBGNOJJETTC-UHFFFAOYSA-N COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC Chemical compound COC1=C(C=CC=C1)N(C1=CC=2C3(C4=CC(=CC=C4C=2C=C1)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)N(C1=CC=C(C=C1)OC)C1=C(C=CC=C1)OC)C1=CC=C(C=C1)OC KSSJBGNOJJETTC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000002228 disulfide group Chemical group 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000005678 ethenylene group Chemical class [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Definitions
- the present invention relates to an organic transistor and a method for manufacturing the same.
- An organic transistor is a transistor using an organic semiconductor material.
- the field effect mobility (hereinafter, simply referred to as mobility) has reached 1 cm 2 / Vsec equivalent to amorphous silicon.
- Organic transistors are roughly classified into a top gate structure and a bottom gate structure depending on the arrangement of the gate electrodes.
- a gate insulating layer is stacked on the organic semiconductor layer to form a channel.
- the organic semiconductor material is crystallized because the mobility increases.
- the organic semiconductor layer is formed by vapor deposition or coating, but with these methods, the organic semiconductor material becomes polycrystalline.
- the mobility of an organic transistor having a polycrystalline organic semiconductor layer is controlled mainly by the boundary mobility that moves between grains. Between the mobility ⁇ and the grain size L of the organic semiconductor layer, A relationship is established. From this equation, it is understood that the mobility ⁇ can be increased by increasing the grain size L of the organic semiconductor layer.
- ⁇ v> is the average electron velocity
- k is the Boltzmann constant
- Eb is the activation energy
- Patent Document 1 International Publication WO2008 / 117579 discloses a first organic thin film such as pentacene and a second organic tetraamine such as tetraaryldiamines on an insulating substrate.
- An organic transistor has been proposed in which organic thin films or inorganic insulating thin films such as Al 2 O 3 are alternately stacked.
- Patent Document 2 Japanese Patent Laid-Open No. 2010-245114 discloses that in a bottom-gate organic transistor, the mobility is improved by treating the gate insulating film with a coupling agent.
- Patent Document 2 it is suggested that an organic semiconductor layer having a large grain size can be obtained by treating the gate insulating film with a coupling agent to reduce the surface free energy. It has also been suggested that increasing the grain size reduces the intergrain boundaries that cause carrier traps and increases mobility.
- Patent Document 3 Japanese Patent Laid-Open No. 2010-141142 proposes forming a coating thin film having a surface free energy of 50 mJ / m 2 or less on a gate insulating film in an organic transistor having a bottom gate structure. ing. Thus, in Patent Document 3, it is described that when a semiconductor active layer such as pentacene is grown on the thin film, a semiconductor active layer with few defects serving as carrier trap levels can be grown.
- Patent Document 4 International Publication WO2006 / 137233 relates to a method for forming an organic semiconductor material thin film by applying a liquid containing an organic semiconductor material to a substrate surface to form a semiconductor material thin film.
- Patent Documents 1 to 3 are directed to an organic transistor having a bottom gate structure, and a top gate structure in which a channel is formed by stacking a gate insulating layer on an organic semiconductor layer. It is difficult to apply to improving the mobility of organic transistors.
- Patent Document 4 application to an organic transistor having a top gate structure is suggested for the time being, but the object of surface treatment in that case is said to be a support (substrate) such as a glass substrate or a plastic film, The specific method of surface treatment is not specified.
- the present invention provides an organic transistor having a top gate structure and high mobility.
- the inventors of the present invention performed a surface treatment in which adhesion work W1 ⁇ W2 is applied to the first insulating layer serving as a base of the organic semiconductor layer in advance in an organic transistor having a top gate structure.
- W1 is an adhesion work when the organic semiconductor layer is formed on the same organic semiconductor layer
- W2 is when the organic semiconductor layer is formed on the first insulating layer that is the surface-treated base. Is the work of bonding.
- the organic transistor of the present invention includes a support, a first insulating layer stacked on the support, an organic semiconductor layer stacked on the first insulating layer, and the organic semiconductor layer.
- a pair of source and drain electrodes provided in partial contact, a second insulating layer stacked above the organic semiconductor layer, and a gate electrode provided on the second insulating layer; It is equipped with.
- a surface treatment is performed on a surface of the first insulating layer in contact with the organic semiconductor layer, and the surface treatment is performed by stacking two layers using the same material as the organic semiconductor layer.
- the organic semiconductor layer is formed between the first insulating layer and the organic semiconductor layer when the organic semiconductor layer is formed on the first insulating layer serving as a surface-treated base. This is a process for causing the bonding work W2 to have a relationship of W1 ⁇ W2.
- the surface treatment is partially performed on the surface of the first insulating layer corresponding to at least a channel region formed at a boundary between the organic semiconductor layer and the second insulating layer. It may be given to.
- the surface treatment may be a treatment for attaching a saturated hydrocarbon compound having 10 to 30 carbon atoms.
- the constituent material of the organic semiconductor layer may be pentacene.
- the constituent material of the first insulating layer may be SrTiO 3 .
- the organic transistor of the present invention may have a top gate / bottom contact type structure in which the pair of source and drain electrodes are provided below the organic semiconductor layer.
- a SAM film may be provided on the pair of source and drain electrodes.
- the organic transistor manufacturing method of the present invention includes a support, a first insulating layer stacked on the support, an organic semiconductor layer stacked on the first insulating layer, and the organic semiconductor.
- a pair of source and drain electrodes provided in partial contact with the layer; a second insulating layer stacked above the organic semiconductor layer; and provided on the second insulating layer And an organic transistor comprising a gate electrode.
- the manufacturing method includes a step of performing a surface treatment on a surface of the first insulating layer in contact with the organic semiconductor layer, a step of forming the organic semiconductor layer on the first insulating layer after the surface treatment, It has.
- the first surface serving as a base on which the organic semiconductor layer is surface-treated is used.
- the adhesion work W2 between the first insulating layer and the organic semiconductor layer when formed on the insulating layer is performed so as to satisfy the relationship of W1 ⁇ W2.
- the crystal growth of molecules constituting the organic semiconductor layer is promoted, the grain size is increased, and the regularity of the crystal is improved. It becomes possible to planarize the surface of the organic semiconductor layer. Thereby, it becomes possible to reduce the barrier of carrier movement in the channel region at the interface between the organic semiconductor layer and the second insulating layer, and to improve the mobility in the organic transistor.
- FIG. 1 is a sectional view showing a schematic configuration of an organic transistor 100 according to a first embodiment of the present invention.
- the organic transistor 100 has a so-called top gate / bottom contact type structure. That is, the organic transistor 100 includes a substrate 1 as a support, a base insulating layer 3 as a first insulating layer formed on the substrate 1 with a predetermined thickness, and a predetermined on the base insulating layer 3.
- a gate insulating layer 9 as a second insulating layer stacked on the organic semiconductor layer 7 and a gate electrode 11 stacked on the gate insulating layer 9 are provided.
- the surface of the base insulating layer 3 that is in contact with the organic semiconductor layer 7 is subjected to a surface treatment, and the base insulating layer 3 is subjected to a surface treatment for the adhesion work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer.
- the adhesion work W2 between the base insulating layer 3 and the organic semiconductor layer 7 has a relationship of W1 ⁇ W2.
- the material of the substrate for example, glass, quartz, single crystal silicon, polycrystalline silicon, amorphous silicon, synthetic resin, or the like can be used as an inorganic material or an organic material generally used for an organic transistor.
- the synthetic resin include polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, and polycarbonate.
- a composite substrate in which the above materials are combined can also be used as the substrate 1.
- the substrate 1 may have a multilayer structure.
- insulating material constituting the base insulating layer 3 As an insulating material constituting the base insulating layer 3, an inorganic insulating material or an organic insulating material generally used for an organic transistor can be used.
- inorganic insulating materials include glass, silicon oxide (SiO 2 ), silicon nitride, and aluminum nitride, as well as metal oxides such as aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, strontium titanate, and titanium.
- metal oxides such as aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, strontium titanate, and titanium.
- a metal oxide such as strontium titanate having a relatively high relative dielectric constant even in a thin film state, an amorphous structure, and a
- organic insulating material for example, a polymer material such as polyimide, polyamide, polyester, polyacrylate, phenol resin, fluorine resin, epoxy resin, novolac resin, vinyl resin, or the like can be used.
- the single base insulating layer 3 is illustrated, but a plurality of insulating films can be stacked as the base insulating layer 3.
- a conductive material generally used for an organic transistor can be used as a material (electrode material) of the source electrode 5a and the drain electrode 5b.
- conductive materials include Ag, Au, Ta, Ti, Al, Zr, Cr, Nb, Hf, Mo, alloys thereof, indium tin oxide alloy (ITO), indium zinc oxide (IZO), and the like.
- Organic semiconductor material for forming the organic semiconductor layer 7 examples include materials that can form the organic semiconductor layer 7 having desired semiconductor characteristics, such as aromatic compounds, chain compounds, organic pigments, and organic silicon compounds. be able to. More specifically, for example, low molecular organic compounds such as pentacene, polypyrroles, polythiophenes, polyisothianaphthenes, polychenylene vinylenes, poly (p-phenylene vinylene) s, polyanilines, polyacetylenes, polyazulenes High molecular organic compounds such as Among these, the use of condensed polycyclic aromatics such as pentacene, which can increase the mobility of the organic transistor 100 and can easily control the film thickness, is desirable. Since an acene-type condensed polycyclic aromatic compound such as pentacene is rich in benzene rings, the overlap between molecules due to the expansion of the ⁇ -electron system becomes large, so that an improvement in mobility can be expected.
- low molecular organic compounds such
- the thickness of the organic semiconductor layer 7 can be set as appropriate according to the type of the organic semiconductor material, and can be set in the range of 1.5 nm to 15 nm, for example.
- ⁇ Gate insulation layer> As an insulating material constituting the gate insulating layer 9, an inorganic insulating material or an organic insulating material generally used for an organic transistor can be used.
- inorganic insulating materials include glass, silicon oxide (SiO 2 ), silicon nitride, and aluminum nitride, as well as metal oxides such as aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, strontium titanate, and titanium.
- metal oxides such as aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, strontium titanate, and titanium.
- a metal oxide such as strontium titanate having a relatively high relative dielectric constant even in a thin film state, an amorphous structure, and a
- organic insulating material for example, a polymer material such as polyimide, polyamide, polyester, polyacrylate, phenol resin, fluorine resin, epoxy resin, novolac resin, vinyl resin, or the like can be used.
- the thickness of the gate insulating layer 9 can be appropriately set according to the type of the insulating material and the like, but can be set in the range of, for example, 50 nm to 1000 nm, and preferably in the range of 100 nm to 300 nm.
- a conductive material generally used for an organic transistor can be used.
- conductive materials include Ag, Au, Ta, Ti, Al, Zr, Cr, Nb, Hf, Mo, alloys thereof, indium tin oxide alloy (ITO), indium zinc oxide (IZO), and the like.
- ⁇ Surface treatment> The surface of the base insulating layer 3 that is in contact with the organic semiconductor layer 7 is subjected to surface treatment.
- the adhesion work when the organic semiconductor layer 7 is formed on the same organic semiconductor layer is W1
- the organic semiconductor layer 7 have a relationship of W1 ⁇ W2.
- the bonding work means the difference between the sum of the surface free energies of the liquid and the solid and the surface free energy after the liquid and the solid are bonded, as represented by the following equation.
- W SL ( ⁇ S + ⁇ L ) ⁇ SL (1)
- ⁇ S is the surface free energy of the solid
- ⁇ L is the surface free energy of the liquid
- ⁇ SL is the interface free energy in the state where the liquid and the solid are bonded
- FIG. 2 shows the change in the surface state of the a-SrTiO 3 thin film with respect to the coverage when the pentacene thin film as the organic semiconductor material is formed on the amorphous strontium titanate (a-SrTiO 3 ) thin film as the inorganic insulating material.
- the measurement results under the condition where the bonding work W2 is changed are shown.
- the a-SrTiO 3 thin film was formed to a thickness of 100 nm at room temperature by a plasma sputter deposition method.
- the pentacene thin film was formed to a thickness of 2 nm by a vacuum deposition method at a substrate temperature of room temperature.
- the adhesion work W1 when the pentacene thin film is formed on the same pentacene thin film is approximately 100 mN / m (indicated by the hatched portion in FIG. 2).
- the surface of a-SrTiO 3 is untreated (reference A), and as the surface treatment, C 20 H 44 treatment (reference B), CxFy treatment (reference C; x and y are stoichiometrically taken).
- C 20 H 44 treatment reference B
- CxFy treatment reference C; x and y are stoichiometrically taken.
- ultraviolet treatment reference D
- combination of ultraviolet treatment and 230 ° C. annealing treatment reference E
- radical treatment reference F
- dibutyl phthalate treatment reference G
- the C 20 H 44 treatment was performed by enclosing the C 20 H 44 solid and the a-SrTiO 3 substrate in a petri dish.
- the CxFy treatment was performed by enclosing a vacuum grease such as Fomblin (registered trademark; manufactured by Solvay Specialty Polymers) and an a-SrTiO 3 substrate in a petri dish.
- the ultraviolet treatment was carried out by exposing a-SrTiO 3 to ultraviolet rays for 10 minutes in the air using a UV treatment apparatus having a wavelength of 185 nm. In the combination of the ultraviolet treatment and the annealing treatment, the ultraviolet treatment was performed under the same conditions as described above and then annealed in vacuum.
- the radical treatment was performed with an O 2 plasma ashing apparatus.
- the dibutyl phthalate treatment was performed by enclosing the dibutyl phthalate solution and the a-SrTiO 3 substrate in a petri dish.
- Ultraviolet treatment (reference D), ultraviolet treatment, 230 ° C. annealing treatment (reference E), and radical treatment (reference F) are all surface treatments that clean the surface of a-SrTiO 3 .
- untreated (reference A) state organic substances may be attached to the surface of the a-SrTiO 3 , but these treatments remove organic substances from the surface of the a-SrTiO 3.
- the adhesion work W2 is larger than that of untreated (reference A).
- the ultraviolet treatment and the 230 ° C. annealing treatment (reference E) it is considered that the organic matter remains as a result of incomplete cleaning.
- the radical treatment (reference F) the cleaning work has progressed too much, so it is considered that the bonding work W2 is larger than W1.
- the C 20 H 44 treatment (reference B) and the CxFy treatment (reference C) are used for the adhesion work W2. It is considered that the effect of lowering is large and preferable.
- the surface treatment is performed so that the adhesion work W2 between the insulating layer 3 and the organic semiconductor layer 7 has a relationship of W1 ⁇ W2.
- the layer 3 gets wet (bonded), and the possibility of staying at that place increases, and crystal growth starts around that place. The more crystal formation sites, the lower the crystal orientation and consequently the greater the possibility of causing a decrease in grain size.
- the wettability between the organic semiconductor layer 7 and the base insulating layer 3 is small (W1 ⁇ W2), the molecules can move freely on the base insulating layer 3 without staying in a specific place. Crystals are generated in a state where the cohesiveness of the molecule itself is utilized. As a result, it is presumed that a large grain is formed and the surface is flattened. Thereby, the effect of reducing the carrier movement barrier in the channel region C at the interface between the organic semiconductor layer 7 and the gate insulating layer 9 and improving the mobility in the organic transistor 100 can be obtained.
- FIGS. 3 to 6 schematically show the cross-sectional structure of the substrate surface in order to explain the process procedure in the method of manufacturing the organic transistor 100 of the present embodiment.
- the method of manufacturing the organic transistor 100 of the present embodiment includes at least a step of forming a base insulating layer 3 on the substrate 1, a step of forming source / drain electrodes 5a and 5b on the base insulating layer 3, and a source A step of laminating and forming the organic semiconductor layer 7 so as to cover the drain electrodes 5a and 5b and in contact with the base insulating layer 3, a step of laminating and forming the gate insulating layer 9 on the organic semiconductor layer 7, and a gate insulating layer Forming a gate electrode 11 on the substrate 9.
- the manufacturing method 100 of the organic transistor of this Embodiment is further equipped with the process of surface-treating to the surface which touches the organic-semiconductor layer 7 of the base insulating layer 3, before forming the organic-semiconductor layer 7.
- FIG. The organic semiconductor layer 7 is formed on the base insulating layer 3 after the surface treatment.
- the surface treatment is performed when the organic semiconductor layer 7 is formed in a state where the surface treatment is performed on the base insulating layer 3 with respect to the adhesion work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer.
- the adhesion work W2 between the insulating layer 3 and the organic semiconductor layer 7 is performed so as to satisfy the relationship W1 ⁇ W2.
- the manufacturing method of the organic transistor 100 of this Embodiment may have another process as needed.
- FIGS. 3A and 3B show a process of forming the base insulating layer 3.
- the base insulating layer 3 is stacked on the substrate 1.
- the method for forming the base insulating layer 3 is not particularly limited.
- the base insulating layer 3 can be formed by a dry process or a wet process. Examples of the dry process include a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, and an atmospheric pressure plasma method.
- Examples of the wet process include spin coating methods, die coating methods, roll coating methods, bar coating methods, LB methods, dip coating methods, spray coating methods, blade coating methods, and casting methods, inkjet methods, Examples thereof include a screen printing method, a pad printing method, a flexographic printing method, a micro contact printing method, a gravure printing method, an offset printing method, and a gravure / offset printing method.
- the film forming conditions for forming the base insulating layer 3 are preferably, for example, a vacuum evaporation method or an MOCVD method from the viewpoint of ensuring the uniformity of the film.
- ⁇ Surface treatment process> 3B to 3C show the surface treatment process.
- the surface treatment step the surface condition of the base insulating layer 3 is changed with respect to the adhesion work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer.
- the adhesion work W2 between the base insulating layer 3 and the organic semiconductor layer 7 when the organic semiconductor layer 7 is formed is performed so as to satisfy the relationship W1 ⁇ W2.
- FIG. 3C a state where the entire surface of the base insulating layer 3 has been surface-treated is indicated by a broken line.
- the surface treatment can be performed, for example, by any of the following treatments i) to iii). i) Treatment for inactivating the surface of the base insulating layer 3. ii) Treatment for reducing active species on the surface of the base insulating layer 3. iii) Treatment for removing moisture on the surface of the base insulating layer 3.
- Examples of the process i) include a process of attaching an inert substance to the surface of the base insulating layer 3.
- the inert substance include saturated hydrocarbons (CxHy), nonvolatile organic substances (for example, CxFy used as vacuum grease), Sr atoms, and the like.
- CxHy saturated hydrocarbons
- nonvolatile organic substances for example, CxFy used as vacuum grease
- Sr atoms sulfur atoms
- the process i) include a process of attaching an inert substance to the surface of the base insulating layer 3.
- the inert substance include saturated hydrocarbons (CxHy), nonvolatile organic substances (for example, CxFy used as vacuum grease), Sr atoms, and the like.
- the saturated hydrocarbon (CxHy), preferably a saturated hydrocarbon compound having 10 to 30 carbon atoms, for example C 20 H 44 and the like are preferable.
- the base insulating layer 3 is composed of a-SrTiO 3
- the C 20 H 44 is bonded to the unbonded sites of Ti atoms and O atoms in the base insulating layer 3 by interaction, whereby unbonded sites Is terminated and inactivated.
- the surface of the base insulating layer 3 may be deactivated by exposing the surface of the base insulating layer 3 to a vapor of an inert substance such as saturated hydrocarbon (CxHy) in a sealed container. This can be done by attaching an inert substance.
- an inert substance such as saturated hydrocarbon (CxHy)
- the surface of the base insulating layer 3 is subjected to treatment such as UV treatment and solution cleaning, and the surface is once activated and then sealed in a CxHy atmosphere. Is preferred.
- the treatment ii there can be mentioned a method of supplying atoms and molecules having reactivity with the active species on the surface of the base insulating layer 3.
- the active species on the surface of the base insulating layer 3 include a double bond of oxygen atoms and a Ti atom.
- the source electrode 5a and the drain electrode 5b are formed on the base insulating layer 3 at a predetermined interval corresponding to the channel region C. .
- the method for forming the source electrode 5a and the drain electrode 5b is not particularly limited.
- the source electrode 5a and the drain electrode 5b may be formed by patterning the conductive layer by photolithography and etching, or by screen printing, ink jet, The source electrode 5a and the drain electrode 5b may be directly formed in a pattern on the base insulating layer 3 by vapor deposition or the like.
- the organic semiconductor layer 7 is laminated so as to cover the source / drain electrodes 5 a and 5 b and to be in contact with the base insulating layer 3. Thereby, as shown in FIG. 4A, the organic semiconductor layer 7 is formed.
- the organic semiconductor layer 7 can be formed by, for example, a dry process or a wet process. Examples of the dry process include a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, and an atmospheric pressure plasma method.
- wet processes include spin coating methods, die coating methods, roll coating methods, bar coating methods, LB methods, dip coating methods, spray coating methods, blade coating methods, cast methods, ink jet methods, and screen printing.
- Method pad printing method, flexographic printing method, micro contact printing method, gravure printing method, offset printing method, gravure / offset printing method and the like.
- the surface roughness Ra of the organic semiconductor layer 7 is made as small as possible and is flat. It is preferable to be in a state.
- adhesion when the organic semiconductor layer 7 (for example, pentacene) is formed on the same organic semiconductor layer (for example, pentacene) by subjecting the base insulating layer 3 below the organic semiconductor layer 7 to surface treatment. Since the work W2 for bonding the base insulating layer 3 and the organic semiconductor layer 7 when the organic semiconductor layer 7 is formed with the surface treatment applied to the base insulating layer 3 with respect to the work W1, the relationship W1 ⁇ W2 is satisfied. The surface of the organic semiconductor layer 7 is flattened, and the surface roughness Ra of the organic semiconductor layer 7 can be reduced.
- the gate insulating layer 9 is stacked on the organic semiconductor layer 7.
- the method for forming the gate insulating layer 9 is not particularly limited.
- the gate insulating layer 9 can be formed by a dry process or a wet process. Examples of the dry process include a vacuum deposition method, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, and an atmospheric pressure plasma method.
- Examples of the wet process include spin coating methods, die coating methods, roll coating methods, bar coating methods, LB methods, dip coating methods, spray coating methods, blade coating methods, and casting methods, inkjet methods, Examples thereof include a screen printing method, a pad printing method, a flexographic printing method, a micro contact printing method, a gravure printing method, an offset printing method, and a gravure / offset printing method.
- a wet process when using an organic insulating material for the material of the gate insulating layer 9, it is preferable to form the gate insulating layer 9 by a wet process.
- the gate electrode 11 is formed on the gate insulating layer 9 as shown in FIGS. 4 (b) and 4 (c).
- the method for forming the gate electrode 11 is not particularly limited, and can be determined according to the material of the gate electrode 11.
- a conductive layer may be formed on the entire surface of the gate insulating layer 9 and then patterned by a photolithography technique to form the gate electrode 11.
- the gate electrode 11 may be directly formed in a pattern on the gate insulating layer 9 by a screen printing method, an ink jet method, an evaporation method, or the like.
- the organic transistor 100 shown in FIG. 1 can be manufactured.
- the organic transistor 100 of the present embodiment can be preferably used for a liquid crystal display device, an organic EL display device, an electrophoretic display device, etc. as an organic field effect transistor such as a thin film transistor (TFT).
- TFT thin film transistor
- the surface treatment may be performed on the entire surface of the base insulating layer 3, or may be performed on a part of the base insulating layer 3.
- the region (channel corresponding region Rc) on the base insulating layer 3 corresponding to the channel region C formed at the boundary between the organic semiconductor layer 7 and the gate insulating layer 9 is partially included. It is also possible to apply.
- a self-assembled monomolecule (Self-assembled) is formed on the source electrode 5a and the drain electrode 5b as shown in FIG.
- a monolayer (SAM) film 20 can also be formed.
- SAM film 20 the surface free energy on the surfaces of the source electrode 5a and the drain electrode 5b is reduced, the wettability of the organic semiconductor material is improved, and the crystallinity (crystal size, crystal arrangement) of the organic semiconductor material is improved.
- the electrical connection between the source electrode 5a and the drain electrode 5b and the organic semiconductor layer 7 can be improved.
- the SAM film 20 has a structure in which a large number of compound molecules are arranged in the width direction in the thickness direction.
- Each compound molecule has a bonding group that adsorbs to the source electrode 5a and the drain electrode 5b at one end and a water-repellent end group at the other end.
- the bonding group that adsorbs to the source electrode 5a and the drain electrode 5b can be selected according to the material of the source electrode 5a and the drain electrode 5b.
- the source electrode 5a and the drain electrode 5b are made of gold, silver, copper, or the like.
- a thiol group (SH) and a disulfide group (SS) are preferably used as the bonding group.
- a methyl group (CH 3 ), fluorine (F), or the like is preferably used.
- gold is used as the material of the source electrode 5 a and the drain electrode 5 b, alkanethiol or the like can be used as the SAM film 20.
- the base insulating layer 3 formed on the substrate 1 is subjected to surface treatment in advance.
- the base insulating layer 3 in the case where the organic semiconductor layer 7 is formed with the surface treatment applied to the base insulating layer 3 with respect to the adhesive work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer.
- the organic semiconductor layer 7 have a relationship of W1 ⁇ W2.
- the surface of the organic semiconductor layer 7 can be planarized. Thereby, the effect of reducing the carrier movement barrier in the channel region C at the interface between the organic semiconductor layer 7 and the gate insulating layer 9 and improving the mobility in the organic transistor 100 can be obtained.
- FIG. 7 is a diagram illustrating a schematic configuration of an organic transistor according to the second embodiment of the present invention.
- the organic transistor 101 has a so-called top gate / top contact type structure. That is, the organic transistor 101 is in contact with the substrate 1 as the support, the base insulating layer 3 as the first insulating layer formed on the substrate 1 with a predetermined thickness, and the base insulating layer 3.
- a gate insulating layer 9 as a second insulating layer stacked on the organic semiconductor layer 7 and a gate electrode 11 stacked on the gate insulating layer 9 are provided.
- the surface of the base insulating layer 3 in contact with the organic semiconductor layer 7 is subjected to a surface treatment, and the surface treatment is performed on the base insulating layer 3 with respect to the adhesive work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer.
- the organic transistor 101 of this embodiment has the same characteristics as the organic transistor 100 of the first embodiment except that it has a top-gate / top-contact structure. Accordingly, the same components are denoted by the same reference numerals and description thereof is omitted.
- the surface treatment is performed on the base insulating layer 3 formed on the substrate 1.
- the base insulating layer in the case where the organic semiconductor layer 7 is formed with the surface treatment applied to the base insulating layer 3 with respect to the adhesive work W1 when the organic semiconductor layer 7 is formed on the same organic semiconductor layer. 3 and the organic semiconductor layer 7 have a relationship of W1 ⁇ W2.
- the surface of the organic semiconductor layer 7 can be planarized. Thereby, the effect of reducing the carrier movement barrier in the channel region C at the interface between the organic semiconductor layer 7 and the gate insulating layer 9 and improving the mobility in the organic transistor 101 can be obtained.
- the manufacturing method of the organic transistor 101 of the present embodiment includes a step of forming a base insulating layer 3 on the substrate 1, a step of forming an organic semiconductor layer 7 so as to be in contact with the base insulating layer 3, and an organic semiconductor layer.
- the manufacturing method of the organic transistor 101 of this Embodiment is further the adhesion work W1 at the time of forming the organic-semiconductor layer 7 on the surface which touches the organic-semiconductor layer 7 of the base insulating layer 3 on the same organic-semiconductor layer.
- the organic semiconductor layer 7 is formed in a state where the surface treatment is performed on the base insulating layer 3, the surface of the base insulating layer 3 and the organic semiconductor layer 7 so that the bonding work W2 satisfies the relationship of W1 ⁇ W2.
- a processing step is provided.
- the manufacturing method of the organic transistor 101 of this Embodiment may have another process as needed.
- the manufacturing method of the organic transistor 101 is the same as that of the first embodiment except that the organic semiconductor layer 7 is formed so as to be in contact with the base insulating layer 3 and then the source electrode 5 a and the drain electrode 5 b are formed on the organic semiconductor layer 7. It can be carried out in the same manner as the manufacture of the organic transistor 100 of the embodiment.
- the base insulating layer corresponding to the channel region C formed at the boundary between the organic semiconductor layer 7 and the gate insulating layer 9 3 may be partially subjected to surface treatment so as to include the region above 3 (channel corresponding region Rc).
- Other configurations and effects of the organic transistor 101 of the present embodiment are the same as those of the organic transistor 100 of the first embodiment.
- the surface treatment step includes i) treatment for inactivating the surface of the base insulating layer 3 ii) activity of the surface of the base insulating layer 3 It was decided to carry out a treatment for reducing seeds, and iii) a treatment for removing moisture on the surface of the base insulating layer 3.
- a cleaning process for cleaning the surface of the base insulating layer 3 is performed prior to the processes i) to iii).
- the surface treatment step includes, for example, the above-described processes i) to iii) and a cleaning process performed before that.
- the surface treatment process by performing a cleaning process for cleaning the surface of the base insulating layer 3, the surface state of the base insulating layer 3 can be made uniform. There is an advantage that it becomes easy to quantitatively grasp the effect of the process.
- FIG. 8 is a flowchart showing the procedure of only the surface treatment step in the method of manufacturing the organic transistor of the present embodiment.
- an inactivation process is performed on the a-SrTiO 3 of the base insulating layer 3 in the processes i) to iii)
- the cleaning treatment S1 is performed.
- an inactivation process S2 is performed.
- Examples of the cleaning treatment S1 for the base insulating layer 3 include radical treatment, a combination of ultraviolet treatment and annealing treatment, and the like.
- the deactivation process S2 can be performed in the same manner as the deactivation process i) in the first embodiment. Note that the processes ii) and iii) may be performed instead of the inactivation process.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
[第1の実施の形態]
図1は、本発明の第1の実施の形態の有機トランジスタ100の概略構成を示す断面図である。この有機トランジスタ100は、いわゆるトップゲート・ボトムコンタクト型構造をしている。すなわち、有機トランジスタ100は、支持体としての基板1と、この基板1の上に所定の厚みで形成された第1の絶縁層としての下地絶縁層3と、この下地絶縁層3の上に所定のパターンで部分的に形成された一対のソース電極5a及びドレイン電極5bと、これらソース電極5a及びドレイン電極5bを覆うように、かつ下地絶縁層3に接するように積層された有機半導体層7と、有機半導体層7の上に積層された第2の絶縁層としてのゲート絶縁層9と、ゲート絶縁層9の上に積層されたゲート電極11とを備えている。下地絶縁層3の有機半導体層7と接する面には、表面処理がなされ、有機半導体層7を同一の有機半導体層上に形成した場合の接着仕事W1に対し、下地絶縁層3に表面処理をした状態で有機半導体層7を形成した場合の下地絶縁層3と有機半導体層7との接着仕事W2が、W1≧W2の関係になっている。
基板1の材質は、有機トランジスタに一般的に用いられる無機材料あるいは有機材料として、例えば、ガラス、石英、単結晶シリコン、多結晶シリコン、アモルファスシリコン、合成樹脂などを用いることができる。ここで、合成樹脂としては、例えば、ポリエチレンテレフタレート、ポリエチレンナフタレート、ポリエーテルスルホン、ポリエーテルイミド、ポリエーテルエーテルケトン、ポリフェニレンスルフィド、ポリアリレート、ポリイミド、ボリカーボネートなどを挙げることができる。なお、基板1として、上記材料を組み合わせた複合基板を用いることもできる。また、基板1は、多層構造であってもよい。
下地絶縁層3を構成する絶縁材料としては、有機トランジスタに一般的に用いられる無機絶縁材料あるいは有機絶縁材料を用いることができる。
ソース電極5a及びドレイン電極5bの材料(電極材料)としては、有機トランジスタに一般的に用いられる導電性材料を使用できる。このような導電性材料としては、例えば、Ag、Au、Ta、Ti、Al、Zr、Cr、Nb、Hf、Mo、これらの合金、酸化インジウムスズ合金(ITO)、酸化インジウム亜鉛(IZO)等の金属材料や、シリコン単結晶、多結晶シリコン、アモルファスシリコン等のシリコン系材料、カーボンブラック、グラファイト等の炭素材料、さらに例えば、導電性高分子材料などを挙げることができる。
有機半導体層7を形成するための有機半導体材料としては、所望の半導体特性を備えた有機半導体層7を形成できる材料、例えば、芳香族化合物、鎖式化合物、有機顔料、有機ケイ素化合物等を挙げることができる。より具体的には、例えばペンタセン等の低分子有機化合物、ポリピロール類、ポリチオフェン類、ポリイソチアナフテン類、ポリチェニレンビニレン類、ポリ(p-フェニレンビニレン)類、ポリアニリン類、ポリアセチレン類、ポリアズレン類等の高分子有機化合物を挙げることができる。これらの中でも、有機トランジスタ100の移動度を高くすることができ、簡便に膜厚制御が可能であるペンタセンなどの縮合多環芳香族の使用が望ましい。ペンタセンのようなアセン系の縮合多環芳香族化合物では、ベンゼン環が豊富であるためπ電子系の拡張による分子間の重なりが大きくなるので、移動度の向上が期待できる。
ゲート絶縁層9を構成する絶縁材料としては、有機トランジスタに一般的に用いられる無機絶縁材料あるいは有機絶縁材料を用いることができる。
ゲート電極11を構成する材料としては、有機トランジスタに一般的に用いられる導電性材料を使用できる。このような導電性材料としては、例えば、Ag、Au、Ta、Ti、Al、Zr、Cr、Nb、Hf、Mo、これらの合金、酸化インジウムスズ合金(ITO)、酸化インジウム亜鉛(IZO)等の金属材料や、シリコン単結晶、多結晶シリコン、アモルファスシリコン等のシリコン系材料、カーボンブラック、グラファイト等の炭素材料、さらに例えば、導電性高分子材料などを挙げることができる。
下地絶縁層3の有機半導体層7と接する面には、表面処理がなされる。そして、有機半導体層7を同一の有機半導体層上に形成した場合の接着仕事をW1とした場合、下地絶縁層3に表面処理をした状態で有機半導体層7を形成した場合の下地絶縁層3と有機半導体層7との接着仕事W2は、W1≧W2の関係になっている。
WSL=(γS+γL)-γSL ・・・(1)
[ここで、WSLは接着仕事、γSは固体の表面自由エネルギー、γLは液体の表面自由エネルギー、γSLは液体と固体が接着した状態の界面自由エネルギーを示す]
次に、図3~6を参照しながら、本実施の形態の有機トランジスタ100の製造方法について説明する。図3~6は、本実施の形態の有機トランジスタ100の製造方法における工程手順を説明するために基板表面の断面構造を模式的に表したものである。本実施の形態の有機トランジスタ100の製造方法は、少なくとも、基板1上に下地絶縁層3を積層形成する工程と、下地絶縁層3上にソース・ドレイン電極5a,5bを形成する工程と、ソース・ドレイン電極5a,5bを覆い、かつ下地絶縁層3に接するように有機半導体層7を積層形成する工程と、有機半導体層7上に、ゲート絶縁層9を積層形成する工程と、ゲート絶縁層9上にゲート電極11を形成する工程と、を備えている。そして、本実施の形態の有機トランジスタの製造方法100は、さらに、有機半導体層7を形成する前に、下地絶縁層3の有機半導体層7と接する面に表面処理を行う工程を備えている。有機半導体層7は、表面処理後の下地絶縁層3の上に形成される。ここで、表面処理は、有機半導体層7を同一の有機半導体層上に形成した場合の接着仕事W1に対し、下地絶縁層3に表面処理をした状態で有機半導体層7を形成した場合の下地絶縁層3と有機半導体層7との接着仕事W2が、W1≧W2の関係になるように行われる。なお、本実施の形態の有機トランジスタ100の製造方法は、必要に応じて他の工程を有してもよい。
図3(a)~(b)は、下地絶縁層3の形成工程を示している。本工程では、基板1上に下地絶縁層3を積層形成する。下地絶縁層3を形成する方法としては、特に限定されるものでない。下地絶縁層3の材質に無機絶縁材料を用いる場合は、ドライプロセス又はウェットプロセスにより下地絶縁層3を形成することができる。ドライプロセスとしては、例えば、真空蒸着法、分子線エピタキシャル成長法、イオンクラスタービーム法、低エネルギーイオンビーム法、イオンプレーティング法、CVD法、スパッタリング法、大気圧プラズマ法などを挙げることができる。また、ウェットプロセスとしては、例えば、スピンコート法、ダイコート法、ロールコート法、バーコート法、LB法、ディップコート法、スプレーコート法、ブレードコート法、キャスト法等の塗布方法や、インクジェット法、スクリーン印刷法、パッド印刷法、フレキソ印刷法、マイクロコンタクトプリンティング法、グラビア印刷法、オフセット印刷法、グラビア・オフセット印刷法等を挙げることができる。なお、下地絶縁層3の材質に有機絶縁材料を用いる場合は、ウェットプロセスにより下地絶縁層3を形成することが好ましい。
図3(b)~(c)は、表面処理工程を示している。表面処理工程は、下地絶縁層3の表面状態を変化させて、有機半導体層7を同一の有機半導体層上に形成した場合の接着仕事W1に対し、下地絶縁層3に表面処理をした状態で有機半導体層7を形成した場合の下地絶縁層3と有機半導体層7との接着仕事W2が、W1≧W2の関係になるように行われる。図3(c)では、下地絶縁層3の全面が表面処理された状態を破線で示している。
i)下地絶縁層3の表面を不活性にする処理。
ii)下地絶縁層3の表面の活性種を減少させる処理。
iii)下地絶縁層3の表面の水分を除去する処理。
ソース・ドレイン電極の形成工程では、図3(c)~(d)に示すように、下地絶縁層3上に、チャネル領域Cに対応する所定の間隔でソース電極5aおよびドレイン電極5bを形成する。ソース電極5a及びドレイン電極5bを形成する方法は特に限定されるものではない。例えば、下地絶縁層3の全面に導電性層を形成した後、これをフォトリソグラフィー技術とエッチングによりパターニングしてソース電極5aおよびドレイン電極5bを形成してもよいし、スクリーン印刷法、インクジェット法、蒸着法等によって下地絶縁層3上に直接パターン状にソース電極5aおよびドレイン電極5bを形成してもよい。
有機半導体層7の形成工程では、ソース・ドレイン電極5a,5bを覆い、かつ下地絶縁層3に接するように有機半導体層7を積層形成する。これにより、図4(a)に示すように、有機半導体層7が形成される。有機半導体層7は、例えば、ドライプロセス又はウェットプロセスにより形成することができる。ドライプロセスとしては、例えば、真空蒸着法、分子線エピタキシャル成長法、イオンクラスタービーム法、低エネルギーイオンビーム法、イオンプレーティング法、CVD法、スパッタリング法、大気圧プラズマ法などを挙げることができる。ウェットプロセスとしては、例えば、スピンコート法、ダイコート法、ロールコート法、バーコート法、LB法、ディップコート法、スプレーコート法、ブレードコート法、キャスト法等の塗布方法や、インクジェット法、スクリーン印刷法、パッド印刷法、フレキソ印刷法、マイクロコンタクトプリンティング法、グラビア印刷法、オフセット印刷法、グラビア・オフセット印刷法等を挙げることができる。
ゲート絶縁層9の形成工程では、図4(a)、(b)に示すように、有機半導体層7上に、ゲート絶縁層9を積層形成する。ゲート絶縁層9を形成する方法としては、特に限定されるものでない。ゲート絶縁層9の材質に無機絶縁材料を用いる場合は、ドライプロセス又はウェットプロセスによりゲート絶縁層9を形成することができる。ドライプロセスとしては、例えば、真空蒸着法、分子線エピタキシャル成長法、イオンクラスタービーム法、低エネルギーイオンビーム法、イオンプレーティング法、CVD法、スパッタリング法、大気圧プラズマ法などを挙げることができる。また、ウェットプロセスとしては、例えば、スピンコート法、ダイコート法、ロールコート法、バーコート法、LB法、ディップコート法、スプレーコート法、ブレードコート法、キャスト法等の塗布方法や、インクジェット法、スクリーン印刷法、パッド印刷法、フレキソ印刷法、マイクロコンタクトプリンティング法、グラビア印刷法、オフセット印刷法、グラビア・オフセット印刷法等を挙げることができる。なお、ゲート絶縁層9の材質に有機絶縁材料を用いる場合は、ウェットプロセスによりゲート絶縁層9を形成することが好ましい。
ゲート電極11の形成工程では、図4(b)、(c)に示すように、ゲート絶縁層9上にゲート電極11を形成する。ゲート電極11を形成する方法は、特に限定されるものではなく、ゲート電極11の材質に応じて決定できる。ゲート絶縁層9上にパターン状にゲート電極11を形成する方法としては、ゲート絶縁層9の全面に導電性層を形成した後、これをフォトリソグラフィー技術によりパターニングしてゲート電極11としてもよいし、スクリーン印刷法、インクジェット法、蒸着法等によってゲート絶縁層9上に直接パターン状にゲート電極11を形成してもよい。
表面処理工程では、図3(c)に示すように下地絶縁層3の全面に対して表面処理を行ってもよいが、下地絶縁層3の一部に対して行ってもよい。例えば図5に示すように、有機半導体層7とゲート絶縁層9との境界に形成されるチャネル領域Cに対応する下地絶縁層3上の領域(チャネル対応領域Rc)を含むように部分的に施すことも可能である。
図3(d)に示すように、ソース電極5a及びドレイン電極5bを形成した後、さらに、図6に示すように、ソース電極5a及びドレイン電極5bの上に自己組織化単分子(Self-assembled monolayer:SAM)膜20を形成しておくこともできる。SAM膜20を設けることにより、ソース電極5a及びドレイン電極5bの表面の表面自由エネルギーを低下させ、有機半導体材料の濡れ性を向上させ、有機半導体材料の結晶性(結晶の大きさ、結晶配列)を良好にするとともに、ソース電極5a及びドレイン電極5bと有機半導体層7との電気的な接続を良好にすることができる。図示は省略するが、SAM膜20は、厚み方向には一分子のみの化合物分子が、幅方向に多数配列した構造をなしている。各化合物分子は、一端にソース電極5aおよびドレイン電極5bに吸着する結合基を有し、他端に撥水性の末端基を備えている。ここで、ソース電極5aおよびドレイン電極5bに吸着する結合基は、ソース電極5aおよびドレイン電極5bの材料に応じて選択できるが、例えば、ソース電極5aおよびドレイン電極5bが、金、銀、銅などの金属で構成される場合は、結合基としてチオール基(SH)、ジスルフィド基(SS)が好適に用いられる。また、撥水性の末端基としては、メチル基(CH3)、フッ素(F)等が好適に用いられる。具体的には、ソース電極5aおよびドレイン電極5bの材質として金を用いた場合には、SAM膜20として、アルカンチオールなどを用いることができる。
次に、図7を参照しながら、本発明の第2の実施の形態について説明する。図7は、本発明の第2の実施の形態にかかる有機トランジスタの概略構成を説明する図面である。この有機トランジスタ101は、いわゆるトップゲート・トップコンタクト型構造をしている。すなわち、有機トランジスタ101は、支持体としての基板1と、この基板1の上に所定の厚みで形成された第1の絶縁層としての下地絶縁層3と、この下地絶縁層3に接するように積層された有機半導体層7と、この有機半導体層7の上に、所定のパターンで部分的に形成された一対のソース電極5a及びドレイン電極5bと、これらソース電極5a及びドレイン電極5bの間の有機半導体層7の上に積層された第2の絶縁層としてのゲート絶縁層9と、ゲート絶縁層9の上に積層されたゲート電極11とを備えている。下地絶縁層3の有機半導体層7と接する面には、表面処理がなされて、有機半導体層7を同一の有機半導体層上に形成した場合の接着仕事W1に対し、下地絶縁層3に表面処理をした状態で有機半導体層7を形成した場合の下地絶縁層3と有機半導体層7との接着仕事W2が、W1≧W2の関係になっている。本実施の形態の有機トランジスタ101は、トップゲート・トップコンタクト型構造である点を除き、第1の実施の形態の有機トランジスタ100と同様の特徴を備えている。従って、同じ構成には同一の符号を付して説明を省略する。
次に、図8を参照しながら、本発明の第3の実施の形態の有機トランジスタ(図示省略)について、その製造方法を中心に説明する。上記第1の実施の形態及び第2の実施の形態では、表面処理工程を、上記のとおり、i)下地絶縁層3の表面を不活性にする処理、ii)下地絶縁層3の表面の活性種を減少させる処理、iii)下地絶縁層3の表面の水分を除去する処理等により行うこととした。本実施の形態では、表面処理工程として、上記i)~iii)等の処理に先立って、下地絶縁層3の表面を清浄化する清浄化処理を行う構成とした。つまり、本実施の形態では、表面処理工程は、例えば上記i)~iii)等の処理と、その前に行う清浄化処理とを含んでいる。表面処理工程の一部として、下地絶縁層3の表面を清浄化する清浄化処理を行うことによって、下地絶縁層3の表面の状態を一律に揃えることができるため、上記i)~iii)等の処理の効果を定量的に把握しやすくなるというメリットがある。
Claims (8)
- 支持体と、前記支持体の上に積層された第1の絶縁層と、前記第1の絶縁層の上に積層された有機半導体層と、前記有機半導体層に対し、部分的に接して設けられた一対のソース電極及びドレイン電極と、前記有機半導体層より上に積層された第2の絶縁層と、前記第2の絶縁層の上に設けられたゲート電極と、を備えた有機トランジスタであって、前記第1の絶縁層の前記有機半導体層と接する面に表面処理がなされており、前記表面処理は、前記有機半導体層と同一材料を用いて積層形成した2つの層の間の接着仕事をW1としたときに、前記有機半導体層を、表面処理した下地となる前記第1の絶縁層上に形成した場合の該第1の絶縁層と前記有機半導体層との間の接着仕事W2が、W1≧W2の関係となるようにする処理であることを特徴とする有機トランジスタ。
- 前記第1の絶縁層の表面において、少なくとも、前記有機半導体層と前記第2の絶縁層との境界に形成されるチャネル領域に対応して、前記表面処理が部分的に施されている請求項1に記載の有機トランジスタ。
- 前記表面処理が、炭素数10以上30以下の飽和炭化水素化合物を付着させる処理である請求項1に記載の有機トランジスタ。
- 前記有機半導体層の構成材料がペンタセンである請求項1に記載の有機トランジスタ。
- 前記第1の絶縁層の構成材料がSrTiO3である請求項1に記載の有機トランジスタ。
- 前記一対のソース電極及びドレイン電極が、前記有機半導体層より下方に設けられたトップゲート・ボトムコンタクト型構造である請求項1に記載の有機トランジスタ。
- 前記一対のソース電極及びドレイン電極上にSAM膜が設けられている請求項6に記載の有機トランジスタ。
- 支持体と、前記支持体の上に積層された第1の絶縁層と、前記第1の絶縁層の上に積層された有機半導体層と、前記有機半導体層に対し、部分的に接して設けられた一対のソース電極及びドレイン電極と、前記有機半導体層より上に積層された第2の絶縁層と、前記第2の絶縁層の上に設けられたゲート電極と、を備えた有機トランジスタの製造方法であって、前記第1の絶縁層の前記有機半導体層と接する面に表面処理を行う工程と、表面処理後の前記第1の絶縁層の上に前記有機半導体層を形成する工程と、を備え、前記表面処理は、前記有機半導体層と同一材料を用いて積層形成した2つの層の間の接着仕事をW1としたときに、前記有機半導体層を、表面処理した下地となる前記第1の絶縁層上に形成した場合の該第1の絶縁層と前記有機半導体層との間の接着仕事W2が、W1≧W2の関係になるように行われることを特徴とする有機トランジスタの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280060467.4A CN103999201A (zh) | 2011-12-08 | 2012-11-14 | 有机晶体管及其制造方法 |
KR1020147018605A KR20140099940A (ko) | 2011-12-08 | 2012-11-14 | 유기 트랜지스터 및 그 제조 방법 |
US14/358,694 US20140299870A1 (en) | 2011-12-08 | 2012-11-14 | Organic transistor and method for manufacturing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-268827 | 2011-12-08 | ||
JP2011268827A JP2013120882A (ja) | 2011-12-08 | 2011-12-08 | 有機トランジスタ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013084676A1 true WO2013084676A1 (ja) | 2013-06-13 |
Family
ID=48574055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/079454 WO2013084676A1 (ja) | 2011-12-08 | 2012-11-14 | 有機トランジスタ及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20140299870A1 (ja) |
JP (1) | JP2013120882A (ja) |
KR (1) | KR20140099940A (ja) |
CN (1) | CN103999201A (ja) |
WO (1) | WO2013084676A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6103641B2 (ja) * | 2013-07-25 | 2017-03-29 | エステー産業株式会社 | インクカートリッジ及びチップ |
JP6530591B2 (ja) * | 2014-07-25 | 2019-06-12 | 旭化成株式会社 | フレキシブル回路デバイス及びそれを備える筋電位測定装置 |
CN109698276A (zh) * | 2018-12-27 | 2019-04-30 | 广州天极电子科技有限公司 | 一种薄膜晶体管器件及其制备方法 |
KR102106732B1 (ko) * | 2019-06-17 | 2020-05-06 | 연세대학교 산학협력단 | 유기 트랜지스터, 유기 커패시터, 유기 전자 소자의 제조 방법 및 유기 트랜지스터의 제조 방법 |
CN111081876A (zh) * | 2019-12-30 | 2020-04-28 | 华南理工大学 | 一种以高介电、宽带隙金属氧化物为绝缘层的有机薄膜晶体管及其制备方法与应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006137233A1 (ja) * | 2005-06-21 | 2006-12-28 | Konica Minolta Holdings, Inc. | 有機半導体材料薄膜の形成方法および有機薄膜トランジスタの製造方法 |
JP2007268715A (ja) * | 2006-03-30 | 2007-10-18 | Toppan Printing Co Ltd | 印刷方法、電極パターンの形成方法及び薄膜トランジスタの形成方法 |
WO2009044659A1 (ja) * | 2007-10-05 | 2009-04-09 | Konica Minolta Holdings, Inc. | パターン形成方法 |
JP2010093093A (ja) * | 2008-10-09 | 2010-04-22 | Hitachi Ltd | 半導体装置およびその製造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0410921D0 (en) * | 2004-05-14 | 2004-06-16 | Plastic Logic Ltd | Self-aligned active layer island |
JP4887848B2 (ja) * | 2006-03-15 | 2012-02-29 | セイコーエプソン株式会社 | 回路基板、電気光学装置および電子機器 |
-
2011
- 2011-12-08 JP JP2011268827A patent/JP2013120882A/ja active Pending
-
2012
- 2012-11-14 US US14/358,694 patent/US20140299870A1/en not_active Abandoned
- 2012-11-14 CN CN201280060467.4A patent/CN103999201A/zh not_active Withdrawn
- 2012-11-14 WO PCT/JP2012/079454 patent/WO2013084676A1/ja active Application Filing
- 2012-11-14 KR KR1020147018605A patent/KR20140099940A/ko not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006137233A1 (ja) * | 2005-06-21 | 2006-12-28 | Konica Minolta Holdings, Inc. | 有機半導体材料薄膜の形成方法および有機薄膜トランジスタの製造方法 |
JP2007268715A (ja) * | 2006-03-30 | 2007-10-18 | Toppan Printing Co Ltd | 印刷方法、電極パターンの形成方法及び薄膜トランジスタの形成方法 |
WO2009044659A1 (ja) * | 2007-10-05 | 2009-04-09 | Konica Minolta Holdings, Inc. | パターン形成方法 |
JP2010093093A (ja) * | 2008-10-09 | 2010-04-22 | Hitachi Ltd | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20140099940A (ko) | 2014-08-13 |
JP2013120882A (ja) | 2013-06-17 |
US20140299870A1 (en) | 2014-10-09 |
CN103999201A (zh) | 2014-08-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5291928B2 (ja) | 酸化物半導体装置およびその製造方法 | |
JP6306069B2 (ja) | 金属酸化物半導体装置および半導体装置を製造する方法 | |
US7285440B2 (en) | Organic underlayers that improve the performance of organic semiconductors | |
KR100877153B1 (ko) | 전자소자용 ZnO 반도체막 형성방법 및 상기 반도체막을포함하는 박막 트랜지스터 | |
JP4870403B2 (ja) | 薄膜トランジスタの製法 | |
JP4616359B2 (ja) | 電子素子用ZnO半導体膜の形成方法及び前記半導体膜を含む薄膜トランジスタ | |
US8809115B2 (en) | Method for manufacturing semiconductor device | |
KR101240656B1 (ko) | 평판표시장치와 평판표시장치의 제조방법 | |
US20150357480A1 (en) | Stable metal-oxide thin film transistor and method of making | |
WO2013084676A1 (ja) | 有機トランジスタ及びその製造方法 | |
JP5200322B2 (ja) | 半導体デバイスおよびその製造方法 | |
EP2339633B1 (en) | Method of manufacturing transistor, and of electronic device including transistor | |
US8043978B2 (en) | Electronic device and method for producing electronic device | |
JP2007150156A (ja) | トランジスタおよびその製造方法 | |
JP2004327857A (ja) | 有機トランジスタの製造方法および有機トランジスタ | |
US20180026141A1 (en) | Thin-film transistor, method for producing thin-film transistor and image display apparatus using thin-film transistor | |
WO2008093854A1 (ja) | 薄膜半導体装置の製造方法および薄膜半導体装置 | |
Wang et al. | Low power flexible organic thin film transistors with amorphous Ba0. 7Sr0. 3TiO3 gate dielectric grown by pulsed laser deposition at low temperature | |
JP2007158140A (ja) | 有機トランジスタ | |
WO2013021760A1 (ja) | 有機トランジスタ及びその製造方法 | |
KR101876011B1 (ko) | 산화물 박막 트랜지스터 및 그 제조방법 | |
JP5305461B2 (ja) | 薄膜積層体及びそれを用いた有機トランジスタ | |
WO2007119442A1 (ja) | 電荷移動度が改善された有機トランジスタ及びその製造方法 | |
JP2010027869A (ja) | 薄膜トランジスタ及びその製造方法並びに導電性パターン及びその形成方法 | |
US7932177B2 (en) | Field-effect transistor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12855795 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14358694 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20147018605 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12855795 Country of ref document: EP Kind code of ref document: A1 |