WO2013077370A1 - Polishing composition - Google Patents

Polishing composition Download PDF

Info

Publication number
WO2013077370A1
WO2013077370A1 PCT/JP2012/080220 JP2012080220W WO2013077370A1 WO 2013077370 A1 WO2013077370 A1 WO 2013077370A1 JP 2012080220 W JP2012080220 W JP 2012080220W WO 2013077370 A1 WO2013077370 A1 WO 2013077370A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing composition
high mobility
acid
oxidizing agent
Prior art date
Application number
PCT/JP2012/080220
Other languages
French (fr)
Japanese (ja)
Inventor
周吾 横田
泰之 大和
哲 鎗田
赤塚　朝彦
修一 玉田
Original Assignee
株式会社 フジミインコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011258344A external-priority patent/JP2013115153A/en
Priority claimed from JP2012061153A external-priority patent/JP2013197210A/en
Application filed by 株式会社 フジミインコーポレーテッド filed Critical 株式会社 フジミインコーポレーテッド
Publication of WO2013077370A1 publication Critical patent/WO2013077370A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

  • the present invention relates to a polishing composition used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound.
  • the present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
  • polishing compositions such as those described in Patent Document 1 or Patent Document 2 conventionally used for polishing III-V compound semiconductor substrates generally include sodium dichloroisocyanurate and sodium hypochlorite. Contains oxidizing agents. This oxidizing agent is easily decomposed in the polishing composition, and the decomposition of the oxidizing agent is accompanied by discoloration of the polishing composition. Since the polishing rate of the group III-V compound semiconductor substrate by the polishing composition decreases as the oxidizing agent decomposes, these polishing compositions have difficulty in storage stability.
  • a portion containing a high mobility material such as a group IV material and a group III-V compound (hereinafter also referred to as a high mobility material portion) and a portion containing a silicon material (hereinafter also referred to as a silicon material portion).
  • a high mobility material portion such as a group IV material and a group III-V compound
  • a silicon material portion a portion containing a silicon material
  • the polishing composition described in Patent Document 1 or Patent Document 2 is sufficient for the high mobility material portion when used for polishing a polishing object having a high mobility material portion and a silicon material portion. High polishing selectivity is not exhibited.
  • an object of the present invention is to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Another object of the present invention is to exhibit high polishing selectivity for a high mobility material portion when used in an application for polishing a polishing object having a high mobility material portion and a silicon material portion. An object of the present invention is to provide a polishing composition and to provide a polishing method and a substrate manufacturing method using the polishing composition.
  • a polishing composition for use in polishing a polishing object containing a high mobility material comprising an oxidizing agent and an aprotic compound.
  • a polishing composition containing a polar solvent is provided.
  • the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
  • the second aspect of the present invention provides a method for polishing a polishing object containing a high mobility material using the polishing composition of the first aspect.
  • a method for producing a substrate by polishing a polishing object having a high mobility material portion and a silicon material portion using the polishing composition of the first aspect provide.
  • a polishing composition used for polishing a polishing object containing a high mobility material it is possible to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Further, a polishing composition capable of exhibiting high polishing selectivity for a high mobility material portion when used for polishing an object to be polished having a high mobility material portion and a silicon material portion, and polishing thereof A polishing method using the composition for use and a method for producing a substrate are provided.
  • the polishing composition of the present embodiment is prepared by mixing an oxidizing agent with an aprotic polar solvent. Accordingly, the polishing composition contains an oxidizing agent and an aprotic polar solvent.
  • This polishing composition is used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound.
  • the high mobility material portion is selectively polished in an application of polishing a polishing object having a high mobility material portion and a silicon material portion, more specifically, in an application of polishing the polishing object and manufacturing a substrate.
  • group IV materials include silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC).
  • III-V compounds include gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), indium antimonide (InSb), and the like.
  • the silicon material include polysilicon, silicon oxide, silicon nitride, and the like.
  • the electron mobility of indium phosphide, which is a high mobility material is 5400 cm 2 / V ⁇ s.
  • the electron mobility of the gallium arsenide 8500cm hole mobility in 2 / V ⁇ s is 400cm 2 / V ⁇ s
  • the electron mobility of the indium arsenide is 40000cm 2 /
  • the hole mobility is 500 cm 2 / V ⁇ s at V ⁇ s
  • the electron mobility of indium antimonide is 77000 cm 2 / V ⁇ s
  • the hole mobility is 850 cm 2 / V ⁇ s
  • the electron mobility of germanium is 3900cm hole mobility in 2 / V ⁇ s indicates 1900cm 2 / V ⁇ s
  • the high mobility material for silicon material with the both or one of the electron mobility and hole mobility Significantly shows a high value.
  • the kind of oxidizing agent contained in polishing composition is not specifically limited, It is preferable to have a standard electrode potential of 0.3V or more.
  • a standard electrode potential of 0.3V or higher is used, compared with a case where an oxidant having a standard electrode potential of less than 0.3 V is used, the high mobility material portion of the polishing composition There is an advantage that the polishing rate is improved.
  • the oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (II) salt, iron (III) salt, and Permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, Examples include hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof.
  • hydrogen peroxide, ammonium persulfate, hypochlorous acid, periodic acid, and sodium dichloroisocyanurate are preferable because the polishing rate of
  • the standard electrode potential is expressed by the following equation when all chemical species involved in the oxidation reaction are in the standard state.
  • E0 is the standard electrode potential
  • ⁇ G0 is the standard Gibbs energy change of the oxidation reaction
  • K is its parallel constant
  • F is the Faraday constant
  • T is the absolute temperature
  • n is the number of electrons involved in the oxidation reaction. Therefore, since the standard electrode potential varies depending on the temperature, the standard electrode potential at 25 ° C. is adopted in this specification.
  • the standard electrode potential of the aqueous solution system is described in, for example, the revised 4th edition chemical handbook (basic edition) II, pp 464-468 (edited by the Chemical Society of Japan).
  • the content of the oxidizing agent in the polishing composition is preferably 0.01 mol / L or more, more preferably 0.1 mol / L or more. As the content of the oxidizing agent increases, the polishing rate of the high mobility material portion by the polishing composition is improved.
  • the content of the oxidizing agent in the polishing composition is also preferably 100 mol / L or less, more preferably 50 mol / L or less. As the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
  • aprotic polar solvent (Aprotic polar solvent) Specific examples of the aprotic polar solvent contained in the polishing composition include acetonitrile, acetone, tetrahydrofuran, N, N-dimethylformamide, and dimethyl sulfoxide.
  • an aprotic polar solvent is used to prevent decomposition of the oxidizing agent in the polishing composition and improve the storage stability of the polishing composition. Therefore, this polishing composition is suitably used in applications for polishing a polishing object containing a high mobility material.
  • the aprotic polar solvent in the polishing composition is a silicon material. Since it functions to suppress hydrolysis of the portion, there is an advantage that the polishing selectivity of the polishing composition for the high mobility material portion is improved.
  • the embodiment may be modified as follows.
  • the polishing composition of the above embodiment may contain two or more kinds of oxidizing agents.
  • the polishing composition of the above embodiment may contain two or more aprotic polar solvents.
  • the polishing composition of the above embodiment may further contain a protic polar solvent such as water.
  • a protic polar solvent such as water.
  • the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
  • the polishing composition of the above embodiment may further contain abrasive grains.
  • the abrasive grains may be either inorganic particles or organic particles.
  • the inorganic particles include particles made of a metal oxide such as silica, alumina, ceria, titania and the like.
  • Specific examples of the organic particles include polymethyl methacrylate particles.
  • the polishing composition of the above embodiment may further contain a known additive such as a preservative as necessary.
  • the polishing composition of the above embodiment may be a one-component type or a multi-component type including a two-component type.
  • the polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
  • Polishing compositions of Examples 1 to 9 were prepared by mixing an oxidizing agent with an aprotic polar solvent. Moreover, the polishing composition of Comparative Examples 1 and 2 was prepared by mixing an oxidizing agent with a protic polar solvent. Details of the components in each polishing composition are shown in Table 1. In Table 1, “APS” represents ammonium persulfate, and “H 2 O 2 ” represents hydrogen peroxide.

Abstract

This polishing composition is used in applications of polishing a polishing subject containing a high-mobility material, and contains an oxidizing agent and an aprotic polar solvent. The polishing composition contains: an oxidizing agent such as hydrogen peroxide, ammonium persulfate, sodium dichloroisocyanurate, and the like; and an aprotic polar solvent such as acetonitrile, acetone, tetrahydrofuran, N,N-dimethylformamide, dimethyl sulfoxide, and the like.

Description

研磨用組成物Polishing composition
　本発明は、ＩＶ族材料及びＩＩＩ－Ｖ族化合物などの高移動度材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物に関する。本発明はまた、その研磨用組成物を用いた研磨方法及び基板の製造方法に関する。 The present invention relates to a polishing composition used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound. The present invention also relates to a polishing method and a substrate manufacturing method using the polishing composition.
　ＩＩＩ－Ｖ族化合物半導体基板を研磨する用途で従来使用されている例えば特許文献１又は特許文献２に記載のような研磨用組成物には一般に、ジクロロイソシアヌル酸ナトリウムや次亜塩素酸ナトリウムなどの酸化剤が含まれている。この酸化剤は研磨用組成物中で容易に分解しやすく、酸化剤の分解は研磨用組成物の変色を伴う。酸化剤の分解に従って研磨用組成物によるＩＩＩ－Ｖ族化合物半導体基板の研磨速度に低下が生じるため、これらの研磨用組成物は保存安定性に難があった。 In general, polishing compositions such as those described in Patent Document 1 or Patent Document 2 conventionally used for polishing III-V compound semiconductor substrates generally include sodium dichloroisocyanurate and sodium hypochlorite. Contains oxidizing agents. This oxidizing agent is easily decomposed in the polishing composition, and the decomposition of the oxidizing agent is accompanied by discoloration of the polishing composition. Since the polishing rate of the group III-V compound semiconductor substrate by the polishing composition decreases as the oxidizing agent decomposes, these polishing compositions have difficulty in storage stability.
　また、ＩＶ族材料及びＩＩＩ－Ｖ族化合物などの高移動度材料を含有する部分（以下、高移動度材料部分ともいう）とケイ素材料を含有する部分（以下、ケイ素材料部分ともいう）とを有する研磨対象物を研磨する際には、ケイ素材料部分よりも高移動度材料部分を高選択的に研磨することが必要とされることがある。それは酸化シリコン等のオキサイドロスを少なくすることで、配線層間の耐電圧を確保し、さらにその後のフォトリソグラフィ工程を行う際に、露光焦点合わせを容易にするためである。この点、特許文献１又は特許文献２に記載の研磨用組成物は、高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときに高移動度材料部分に対する十分に高い研磨選択性を発揮しない。 Further, a portion containing a high mobility material such as a group IV material and a group III-V compound (hereinafter also referred to as a high mobility material portion) and a portion containing a silicon material (hereinafter also referred to as a silicon material portion). When polishing an object to be polished, it may be necessary to polish the high mobility material portion more selectively than the silicon material portion. This is to reduce the oxide loss of silicon oxide or the like, thereby ensuring a withstand voltage between the wiring layers and facilitating exposure focusing when performing the subsequent photolithography process. In this regard, the polishing composition described in Patent Document 1 or Patent Document 2 is sufficient for the high mobility material portion when used for polishing a polishing object having a high mobility material portion and a silicon material portion. High polishing selectivity is not exhibited.
特開昭６３－１５０１５５号公報JP 63-150155 A 特開２００４－３２７６１４号公報JP 2004-327614 A
　そこで本発明の目的は、高移動度材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物の保存安定性を向上させることにある。また、本発明の別の目的は、高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときに高移動度材料部分に対する高い研磨選択性を発揮することができる研磨用組成物を提供すること、またその研磨用組成物を用いた研磨方法及び基板の製造方法を提供することにある。 Therefore, an object of the present invention is to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Another object of the present invention is to exhibit high polishing selectivity for a high mobility material portion when used in an application for polishing a polishing object having a high mobility material portion and a silicon material portion. An object of the present invention is to provide a polishing composition and to provide a polishing method and a substrate manufacturing method using the polishing composition.
　上記の目的を達成するために、本発明の第１の態様では、高移動度材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物であって、酸化剤と、非プロトン性極性溶媒とを含有する研磨用組成物を提供する。 In order to achieve the above object, according to a first aspect of the present invention, there is provided a polishing composition for use in polishing a polishing object containing a high mobility material, comprising an oxidizing agent and an aprotic compound. A polishing composition containing a polar solvent is provided.
　研磨用組成物中の非プロトン性極性溶媒の含有量は１０質量％以上であることが好ましい。 The content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
　本発明の第２の態様では、上記第１の態様の研磨用組成物を用いて、高移動度材料を含有する研磨対象物を研磨する方法を提供する。 The second aspect of the present invention provides a method for polishing a polishing object containing a high mobility material using the polishing composition of the first aspect.
　本発明の第３の態様では、上記第１の態様の研磨用組成物を用いて、高移動度材料を含有する部分とケイ素材料を含有する部分とを有する研磨対象物を研磨する方法を提供する。 According to a third aspect of the present invention, there is provided a method for polishing a polishing object having a portion containing a high mobility material and a portion containing a silicon material, using the polishing composition of the first aspect. To do.
　本発明の第４の態様では、上記第１の態様の研磨用組成物を用いて、高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨することにより、基板を製造する方法を提供する。 According to a fourth aspect of the present invention, there is provided a method for producing a substrate by polishing a polishing object having a high mobility material portion and a silicon material portion using the polishing composition of the first aspect. provide.
　本発明によれば、高移動度材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物の保存安定性を向上させることができる。また、高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で使用したときに高移動度材料部分に対する高い研磨選択性を発揮することができる研磨用組成物と、その研磨用組成物を用いた研磨方法及び基板の製造方法とが提供される。 According to the present invention, it is possible to improve the storage stability of a polishing composition used for polishing a polishing object containing a high mobility material. Further, a polishing composition capable of exhibiting high polishing selectivity for a high mobility material portion when used for polishing an object to be polished having a high mobility material portion and a silicon material portion, and polishing thereof A polishing method using the composition for use and a method for producing a substrate are provided.
　以下、本発明の一実施形態を説明する。 Hereinafter, an embodiment of the present invention will be described.
　本実施形態の研磨用組成物は、酸化剤を非プロトン性極性溶媒に混合して調製される。従って、研磨用組成物は、酸化剤及び非プロトン性極性溶媒を含有する。 The polishing composition of the present embodiment is prepared by mixing an oxidizing agent with an aprotic polar solvent. Accordingly, the polishing composition contains an oxidizing agent and an aprotic polar solvent.
　この研磨用組成物は、ＩＶ族材料及びＩＩＩ－Ｖ族化合物などの高移動度材料を含有する研磨対象物を研磨する用途で使用される。あるいは、高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途、さらに言えばその研磨対象物を研磨して基板を製造する用途において高移動度材料部分を選択的に研磨する目的で使用される。ＩＶ族材料の例としては、シリコンゲルマニウム（ＳｉＧｅ）、ゲルマニウム（Ｇｅ）、シリコンカーバイド（ＳｉＣ）が挙げられる。ＩＩＩ－Ｖ族化合物の例としては、リン化ガリウム（ＧａＰ）、リン化インジウム（ＩｎＰ）、ヒ化ガリウム（ＧａＡｓ）、ヒ化インジウム（ＩｎＡｓ）、アンチモン化インジウム（ＩｎＳｂ）等が挙げられる。また、ケイ素材料の例としては、ポリシリコン、酸化シリコン、窒化シリコン等が挙げられる。例えば、電子移動度１６００ｃｍ２／Ｖ・ｓ及び正孔移動度４３０ｃｍ２／Ｖ・ｓであるシリコン材料に対し、高移動度材料であるリン化インジウムの電子移動度は５４００ｃｍ２／Ｖ・ｓで正孔移動度は２００ｃｍ２／Ｖ・ｓ、ヒ化ガリウムの電子移動度は８５００ｃｍ２／Ｖ・ｓで正孔移動度は４００ｃｍ２／Ｖ・ｓ、ヒ化インジウムの電子移動度は４００００ｃｍ２／Ｖ・ｓで正孔移動度は５００ｃｍ２／Ｖ・ｓ、アンチモン化インジウムの電子移動度は７７０００ｃｍ２／Ｖ・ｓで正孔移動度は８５０ｃｍ２／Ｖ・ｓ、そしてゲルマニウムの電子移動度は３９００ｃｍ２／Ｖ・ｓで正孔移動度は１９００ｃｍ２／Ｖ・ｓを示し、シリコン材料に対して高移動度材料は電子移動度及び正孔移動度の両方又は片方について有意に高い値を示す。 This polishing composition is used for polishing a polishing object containing a high mobility material such as a group IV material and a group III-V compound. Alternatively, the high mobility material portion is selectively polished in an application of polishing a polishing object having a high mobility material portion and a silicon material portion, more specifically, in an application of polishing the polishing object and manufacturing a substrate. Used for purposes. Examples of group IV materials include silicon germanium (SiGe), germanium (Ge), and silicon carbide (SiC). Examples of III-V compounds include gallium phosphide (GaP), indium phosphide (InP), gallium arsenide (GaAs), indium arsenide (InAs), indium antimonide (InSb), and the like. Examples of the silicon material include polysilicon, silicon oxide, silicon nitride, and the like. For example, in contrast to a silicon material having an electron mobility of 1600 cm 2 / V · s and a hole mobility of 430 cm 2 / V · s, the electron mobility of indium phosphide, which is a high mobility material, is 5400 cm 2 / V · s. hole mobility 200cm 2 / V · s, the electron mobility of the gallium arsenide 8500cm hole mobility in 2 / V · s is 400cm 2 / V · s, the electron mobility of the indium arsenide is 40000cm 2 / The hole mobility is 500 cm 2 / V · s at V · s, the electron mobility of indium antimonide is 77000 cm 2 / V · s, the hole mobility is 850 cm 2 / V · s, and the electron mobility of germanium is 3900cm hole mobility in 2 / V · s indicates 1900cm 2 / V · s, the high mobility material for silicon material with the both or one of the electron mobility and hole mobility Significantly shows a high value.
　（酸化剤）
　研磨用組成物中に含まれる酸化剤の種類は特に限定されないが、０．３Ｖ以上の標準電極電位を有していることが好ましい。０．３Ｖ以上の標準電極電位を有する酸化剤を使用した場合には、０．３Ｖ未満の標準電極電位を有する酸化剤を使用した場合に比べて、研磨用組成物による高移動度材料部分の研磨速度が向上するという有利がある。０．３Ｖ以上の標準電極電位を有する酸化剤の具体例としては、過酸化水素、過酸化ナトリウム、過酸化バリウム、有機酸化剤、オゾン水、銀（ＩＩ）塩、鉄（ＩＩＩ）塩、並びに過マンガン酸、クロム酸、重クロム酸、ペルオキソ二硫酸、ペルオキソリン酸、ペルオキソ硫酸、ペルオキソホウ酸、過ギ酸、過酢酸、過安息香酸、過フタル酸、次亜塩素酸、次亜臭素酸、次亜ヨウ素酸、塩素酸、亜塩素酸、過塩素酸、臭素酸、ヨウ素酸、過ヨウ素酸、硫酸、過硫酸、クエン酸、ジクロロイソシアヌル酸及びそれらの塩等が挙げられる。これらの中でも、研磨用組成物による高移動度材料部分の研磨速度が大きく向上することから、過酸化水素、過硫酸アンモニウム、次亜塩素酸、過ヨウ素酸、及びジクロロイソシアヌル酸ナトリウムが好ましい。 (Oxidant)
Although the kind of oxidizing agent contained in polishing composition is not specifically limited, It is preferable to have a standard electrode potential of 0.3V or more. When an oxidant having a standard electrode potential of 0.3 V or higher is used, compared with a case where an oxidant having a standard electrode potential of less than 0.3 V is used, the high mobility material portion of the polishing composition There is an advantage that the polishing rate is improved. Specific examples of the oxidizing agent having a standard electrode potential of 0.3 V or more include hydrogen peroxide, sodium peroxide, barium peroxide, organic oxidizing agent, ozone water, silver (II) salt, iron (III) salt, and Permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxophosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, Examples include hypoiodous acid, chloric acid, chlorous acid, perchloric acid, bromic acid, iodic acid, periodic acid, sulfuric acid, persulfuric acid, citric acid, dichloroisocyanuric acid, and salts thereof. Among these, hydrogen peroxide, ammonium persulfate, hypochlorous acid, periodic acid, and sodium dichloroisocyanurate are preferable because the polishing rate of the high mobility material portion by the polishing composition is greatly improved.
　なお、標準電極電位とは、酸化反応に関与するすべての化学種が標準状態にあるときに次式で表される。 The standard electrode potential is expressed by the following equation when all chemical species involved in the oxidation reaction are in the standard state.
　Ｅ０＝－△Ｇ０／ｎＦ＝（ＲＴ／ｎＦ）ｌｎＫ
　ここで、Ｅ０は標準電極電位、△Ｇ０は酸化反応の標準ギブスエネルギー変化、Ｋはその平行定数、Ｆはファラデー定数、Ｔは絶対温度、ｎは酸化反応に関与する電子数である。従って、標準電極電位は温度により変動するので、本明細書中においては２５℃における標準電極電位を採用している。なお、水溶液系の標準電極電位は、例えば改訂４版化学便覧（基礎編）ＩＩ、ｐｐ４６４－４６８（日本化学会編）等に記載されている。 E0 = −ΔG0 / nF = (RT / nF) lnK
Here, E0 is the standard electrode potential, ΔG0 is the standard Gibbs energy change of the oxidation reaction, K is its parallel constant, F is the Faraday constant, T is the absolute temperature, and n is the number of electrons involved in the oxidation reaction. Therefore, since the standard electrode potential varies depending on the temperature, the standard electrode potential at 25 ° C. is adopted in this specification. The standard electrode potential of the aqueous solution system is described in, for example, the revised 4th edition chemical handbook (basic edition) II, pp 464-468 (edited by the Chemical Society of Japan).
　研磨用組成物中の酸化剤の含有量は０．０１ｍｏｌ／Ｌ以上であることが好ましく、より好ましくは０．１ｍｏｌ／Ｌ以上である。酸化剤の含有量が多くなるにつれて、研磨用組成物による高移動度材料部分の研磨速度が向上する。 The content of the oxidizing agent in the polishing composition is preferably 0.01 mol / L or more, more preferably 0.1 mol / L or more. As the content of the oxidizing agent increases, the polishing rate of the high mobility material portion by the polishing composition is improved.
　研磨用組成物中の酸化剤の含有量はまた、１００ｍｏｌ／Ｌ以下であることが好ましく、より好ましくは５０ｍｏｌ／Ｌ以下である。酸化剤の含有量が少なくなるにつれて、研磨用組成物の材料コストを抑えることができるのに加え、研磨使用後の研磨用組成物の処理、すなわち廃液処理の負荷を軽減することができる。 The content of the oxidizing agent in the polishing composition is also preferably 100 mol / L or less, more preferably 50 mol / L or less. As the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
　（非プロトン性極性溶媒）
　研磨用組成物中に含まれる非プロトン性極性溶媒の具体例としては、アセトニトリル、アセトン、テトラヒドロフラン、Ｎ，Ｎ－ジメチルホルムアミド、及びジメチルスルホキシドが挙げられる。 (Aprotic polar solvent)
Specific examples of the aprotic polar solvent contained in the polishing composition include acetonitrile, acetone, tetrahydrofuran, N, N-dimethylformamide, and dimethyl sulfoxide.
　本実施形態によれば以下の作用効果が得られる。 According to this embodiment, the following effects can be obtained.
　・　本実施形態の研磨用組成物では、研磨用組成物中の酸化剤の分解を防いで研磨用組成物の保存安定性を向上させるために非プロトン性極性溶媒が使用されている。そのため、この研磨用組成物は、高移動度材料を含有する研磨対象物を研磨する用途で好適に用いられる。 In the polishing composition of this embodiment, an aprotic polar solvent is used to prevent decomposition of the oxidizing agent in the polishing composition and improve the storage stability of the polishing composition. Therefore, this polishing composition is suitably used in applications for polishing a polishing object containing a high mobility material.
　・　高移動度材料部分とケイ素材料部分とを有する研磨対象物を研磨する用途で本実施形態の研磨用組成物を使用した場合には、研磨用組成物中の非プロトン性極性溶媒がケイ素材料部分の加水分解を抑制する働きをするために、高移動度材料部分に対する研磨用組成物の研磨選択性が向上するという有利がある。 When the polishing composition of the present embodiment is used for polishing a polishing object having a high mobility material portion and a silicon material portion, the aprotic polar solvent in the polishing composition is a silicon material. Since it functions to suppress hydrolysis of the portion, there is an advantage that the polishing selectivity of the polishing composition for the high mobility material portion is improved.
　前記実施形態は次のように変更されてもよい。 The embodiment may be modified as follows.
　・　前記実施形態の研磨用組成物は、二種類以上の酸化剤を含有してもよい。 · The polishing composition of the above embodiment may contain two or more kinds of oxidizing agents.
　・　前記実施形態の研磨用組成物は、二種類以上の非プロトン性極性溶媒を含有してもよい。 The polishing composition of the above embodiment may contain two or more aprotic polar solvents.
　・　前記実施形態の研磨用組成物は、水などのプロトン性極性溶媒をさらに含有してもよい。この場合、研磨用組成物中の非プロトン性極性溶媒の含有量は１０質量％以上であることが好ましい。 The polishing composition of the above embodiment may further contain a protic polar solvent such as water. In this case, the content of the aprotic polar solvent in the polishing composition is preferably 10% by mass or more.
　・　前記実施形態の研磨用組成物は砥粒をさらに含有してもよい。砥粒は、無機粒子及び有機粒子のいずれであってもよい。無機粒子の具体例としては、シリカ、アルミナ、セリア、チタニアなどの金属酸化物からなる粒子が挙げられる。有機粒子の具体例としては、ポリメタクリル酸メチル粒子が挙げられる。 · The polishing composition of the above embodiment may further contain abrasive grains. The abrasive grains may be either inorganic particles or organic particles. Specific examples of the inorganic particles include particles made of a metal oxide such as silica, alumina, ceria, titania and the like. Specific examples of the organic particles include polymethyl methacrylate particles.
　・　前記実施形態の研磨用組成物は、防腐剤のような公知の添加剤を必要に応じてさらに含有してもよい。 The polishing composition of the above embodiment may further contain a known additive such as a preservative as necessary.
　・　前記実施形態の研磨用組成物は一液型であってもよいし、二液型をはじめとする多液型であってもよい。 The polishing composition of the above embodiment may be a one-component type or a multi-component type including a two-component type.
　・　前記実施形態の研磨用組成物は、研磨用組成物の原液を水で希釈することにより調製されてもよい。 The polishing composition of the above embodiment may be prepared by diluting a stock solution of the polishing composition with water.
　次に、本発明の実施例及び比較例を説明する。 Next, examples and comparative examples of the present invention will be described.
　酸化剤を非プロトン性極性溶媒と混合することにより、実施例１～９の研磨用組成物を調製した。また、酸化剤をプロトン性極性溶媒と混合することにより、比較例１，２の研磨用組成物を調製した。各研磨用組成物中の成分の詳細を表１に示す。なお、表１中、“ＡＰＳ”は過硫酸アンモニウムを表し、“Ｈ２Ｏ２”は過酸化水素を表す。 Polishing compositions of Examples 1 to 9 were prepared by mixing an oxidizing agent with an aprotic polar solvent. Moreover, the polishing composition of Comparative Examples 1 and 2 was prepared by mixing an oxidizing agent with a protic polar solvent. Details of the components in each polishing composition are shown in Table 1. In Table 1, “APS” represents ammonium persulfate, and “H 2 O 2 ” represents hydrogen peroxide.
　表１の“保存安定性”欄には、実施例１～９及び比較例１，２の研磨用組成物の保存安定性を評価した結果を示す。具体的には、各研磨用組成物を常温で７日間保存したときに研磨用組成物に変色が認められた場合には×、変色が認められなかった場合には○と評価した。 In the “Storage Stability” column of Table 1, the results of evaluating the storage stability of the polishing compositions of Examples 1 to 9 and Comparative Examples 1 and 2 are shown. Specifically, when each polishing composition was stored at room temperature for 7 days, the polishing composition was evaluated as x when discoloration was observed, and when the discoloration was not observed, it was evaluated as ◯.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
　表１に示すように、非プロトン性極性溶媒を含有している実施例１～９の研磨用組成物の場合には、非プロトン性極性溶媒を含有していない比較例１，２の研磨用組成物の場合と比較して、保存安定性が良好であった。この結果から、研磨用組成物中の酸化剤の分解を抑えるのに非プロトン性極性溶媒が有効であることが示唆される。 As shown in Table 1, in the case of the polishing compositions of Examples 1 to 9 containing an aprotic polar solvent, the polishing compositions of Comparative Examples 1 and 2 containing no aprotic polar solvent Compared to the case of the composition, the storage stability was good. This result suggests that an aprotic polar solvent is effective in suppressing the decomposition of the oxidizing agent in the polishing composition.

Claims (5)

  1. 　高移動度材料を含有する研磨対象物を研磨する用途で使用される研磨用組成物であって、酸化剤と、非プロトン性極性溶媒とを含有することを特徴とする研磨用組成物。 A polishing composition for use in polishing a polishing object containing a high mobility material, comprising an oxidizing agent and an aprotic polar solvent.
  2. 　研磨用組成物中の前記非プロトン性極性溶媒の含有量が１０質量％以上である、請求項１に記載の研磨用組成物。 Polishing composition of Claim 1 whose content of the aprotic polar solvent in polishing composition is 10 mass% or more.
  3. 　請求項１又は２に記載の研磨用組成物を用いて、高移動度材料を含有する研磨対象物を研磨することを特徴とする研磨方法。 A polishing method comprising polishing a polishing object containing a high mobility material using the polishing composition according to claim 1.
  4. 　請求項１又は２に記載の研磨用組成物を用いて、高移動度材料を含有する部分とケイ素材料を含有する部分とを有する研磨対象物を研磨することを特徴とする研磨方法。 A polishing method comprising polishing a polishing object having a portion containing a high mobility material and a portion containing a silicon material, using the polishing composition according to claim 1.
  5. 　請求項１又は２に記載の研磨用組成物を用いて、高移動度材料を含有する部分とケイ素材料を含有する部分とを有する研磨対象物を研磨する工程を有することを特徴とする基板の製造方法。 A step of polishing a polishing object having a portion containing a high mobility material and a portion containing a silicon material using the polishing composition according to claim 1. Production method.
PCT/JP2012/080220 2011-11-25 2012-11-21 Polishing composition WO2013077370A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011-258344 2011-11-25
JP2011258344A JP2013115153A (en) 2011-11-25 2011-11-25 Polishing composition
JP2012061153A JP2013197210A (en) 2012-03-16 2012-03-16 Polishing composition
JP2012-061153 2012-03-16

Publications (1)

Publication Number Publication Date
WO2013077370A1 true WO2013077370A1 (en) 2013-05-30

Family

ID=48469812

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/080220 WO2013077370A1 (en) 2011-11-25 2012-11-21 Polishing composition

Country Status (2)

Country Link
TW (1) TW201339290A (en)
WO (1) WO2013077370A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6327746B2 (en) * 2014-03-31 2018-05-23 株式会社フジミインコーポレーテッド Polishing composition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029465A1 (en) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
JP2010540759A (en) * 2007-10-05 2010-12-24 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Improved silicon carbide particles and methods for making and using the same
JP2011513991A (en) * 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション Polishing method of silicon carbide using water-soluble oxidizing agent

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029465A1 (en) * 2005-09-09 2007-03-15 Asahi Glass Company, Limited Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
JP2010540759A (en) * 2007-10-05 2010-12-24 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Improved silicon carbide particles and methods for making and using the same
JP2011513991A (en) * 2008-03-05 2011-04-28 キャボット マイクロエレクトロニクス コーポレイション Polishing method of silicon carbide using water-soluble oxidizing agent

Also Published As

Publication number Publication date
TW201339290A (en) 2013-10-01

Similar Documents

Publication Publication Date Title
US9978609B2 (en) Low dishing copper chemical mechanical planarization
KR102118964B1 (en) Compositions for cleaning iii-v semiconductor materials and methods of using same
KR102092720B1 (en) A formulation for selectively etching silicon germanium over germanium
JP2019134168A (en) Composition and method for selectively etching titanium nitride
EP3024016B1 (en) Titanium nitride hard mask and etch residue removal
US20160240368A1 (en) Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
JP5735553B2 (en) Etching solution and metal wiring forming method using the same
JPWO2011074601A1 (en) Ruthenium-based metal etching composition and preparation method thereof
KR102522528B1 (en) Slurry and Grinding Method
EP3258485B1 (en) Solution and method for removal of group iii-v element oxide, solution for treatment of group iii-v element compound, solution for preventing oxidation of group iii-v element, solution for treatment of semiconductor substrate, and method for production of semiconductor substrate product
JP2013004871A (en) Metal etching composition, and method of manufacturing semiconductor device using metal etching composition
KR20200081292A (en) Etching solution, and method of producing semiconductor device
WO2013077370A1 (en) Polishing composition
WO2013077369A1 (en) Polishing composition
US9688884B2 (en) Polishing composition
US9834703B2 (en) Polishing composition
JP2013197210A (en) Polishing composition
JP2013115153A (en) Polishing composition
WO2014178326A1 (en) Etchant
US20240014045A1 (en) Semiconductor wafer processing liquid containing hypobromite ions and ph buffering agent
CN111378377A (en) Chemical mechanical polishing solution and application thereof
JPH09279189A (en) Cleaning liquid for semiconductor substrate
JP2013197211A (en) Polishing composition
JP6140390B2 (en) Polishing composition
JP4483392B2 (en) Resist stripping composition

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12851681

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12851681

Country of ref document: EP

Kind code of ref document: A1