WO2013056927A1 - Pièce de recouvrement conçue pour un support d'un dispositif d'éclairage à semi-conducteurs - Google Patents
Pièce de recouvrement conçue pour un support d'un dispositif d'éclairage à semi-conducteurs Download PDFInfo
- Publication number
- WO2013056927A1 WO2013056927A1 PCT/EP2012/068150 EP2012068150W WO2013056927A1 WO 2013056927 A1 WO2013056927 A1 WO 2013056927A1 EP 2012068150 W EP2012068150 W EP 2012068150W WO 2013056927 A1 WO2013056927 A1 WO 2013056927A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- stop edge
- semiconductor light
- attachment
- light source
- carrier
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004382 potting Methods 0.000 claims description 31
- 150000001875 compounds Chemical class 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 description 6
- 239000012463 white pigment Substances 0.000 description 6
- IWZSHWBGHQBIML-ZGGLMWTQSA-N (3S,8S,10R,13S,14S,17S)-17-isoquinolin-7-yl-N,N,10,13-tetramethyl-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1H-cyclopenta[a]phenanthren-3-amine Chemical compound CN(C)[C@H]1CC[C@]2(C)C3CC[C@@]4(C)[C@@H](CC[C@@H]4c4ccc5ccncc5c4)[C@@H]3CC=C2C1 IWZSHWBGHQBIML-ZGGLMWTQSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 229940125810 compound 20 Drugs 0.000 description 5
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- -1 Polybutylene terephthalate Polymers 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000009193 crawling Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Definitions
- the invention relates to an attachment for a carrier of a semiconductor luminescent device, i. one
- Lighting device with at least one semiconductor light source.
- the invention further relates to a carrier for a
- the invention also relates to a lighting device with at least one such carrier.
- the invention is particularly advantageous applicable for casting of LED modules with one or more potting compounds.
- Carriers which are equipped with LED chips on their front side, wherein an area of the front side containing the LED chips is encapsulated with a potting compound based on silicone at least outside the LED chips.
- This potting compound can completely cover the LED chips and be mixed with phosphor.
- one with a white pigment, e.g. Titanium oxide, offset potting compound may be present in addition to the LED chips and in the cured state as a diffusely reflecting bottom to increase a
- Luminous efficacy serve. In both cases, there is a risk that the potting compound on the inside of the mold
- the potting compound can crawl over the mold and contaminate an outdoor area.
- the attachment piece has a (upstanding) wall with at least one inside arranged stop edge.
- the top section thus serves, together with the carrier, as a mold, the height of which is determined by the height of the wall projecting above the carrier.
- the stop edge is in particular a protrusion protruding from the inside.
- a cross-sectional shape of the stop edge is basically arbitrary, but preferably has an edge.
- a cross-sectional shape of the stop edge may in particular be angular, in particular triangular. It is a development that the essay piece for
- Edge area of the carrier is set up.
- the placement can then in particular a dense lateral covering a
- the top part or its wall may basically be open or closed.
- An open shape is suitable
- upstanding component e.g. a connector housing, a handle o. a.
- the wall is a closed or annular wall and the at least one stop edge is a circumferential stop edge.
- the annular wall may be configured in particular annular or have a polygonal basic shape.
- the basic shape of the wall is not limited and may be e.g. also oval or free-shaped.
- the at least one stop edge has exactly one stop edge. This provides a particularly simple designed essay piece, which prevents crawling in particular exactly one potting compound.
- the at least one stop edge has at least two stop edges arranged one above the other. This prevents in particular
- the plurality of potting compounds may in particular be different potting compounds.
- the different potting compounds may in particular have a same base material, e.g. Silicone, but different
- the stop edge (s) can be any suitable fillers, e.g. white pigment, phosphor or scattering filler.
- the stop edge (s) can be any suitable filler.
- the attachment piece has at least one inner stop, which is arranged below the at least one stop edge. This allows the attachment to be easily and precisely positioned on the carrier. The stop is in particular on a side of the carrier to be cast.
- At least one stop can be configured circumferentially or locally limited.
- an inside of the wall is vertically upright. It is an alternative embodiment to that an inside of the wall is designed widening from bottom to top, which supports a bubble-free casting.
- the attachment element can by any
- Manufacturing process can be produced. Particularly preferred are production by means of an injection molding process or chip removal from a block or semifinished product.
- attachment element to achieve a high temperature stability and sufficient yellowing stability of plastic, in particular PTFE or other F-plastics, polyamide,
- PBT Polybutylene terephthalate
- PET polyethylene terephthalate
- thermosets such as unsaturated polyesters, diallyl phthalates or silicones or silicone / epoxy hybrid plastics.
- the attachment consists of a reflective material.
- the attachment piece may have a white color.
- a white pigment e.g. TiO 2, ZrO 2, ZnO or BaSO 4.
- other additives are usable, e.g. scattering additives, mineral additives and / or glass fibers.
- the object is also achieved by a support for a semiconductor luminescent device, which is sealed at the edge by a top piece as described above, wherein the top piece of a with at least one
- the carrier may in particular a printed circuit board or a
- Semiconductor light source at least one light emitting diode.
- a color may be monochrome (e.g., red, green, blue, etc.) or multichrome (e.g., white). This can also be done by the at least one
- LED emitted light is an infrared light (IR LED) or an ultraviolet light (UV LED).
- Light emitting diodes can produce a mixed light; e.g. a white mixed light.
- the at least one light-emitting diode may contain at least one wavelength-converting phosphor
- the at least one light-emitting diode can be in the form of at least one individually housed light-emitting diode or in the form of at least one LED chip. Several LED chips can be mounted on a common substrate ("submount").
- the at least one light emitting diode may be equipped with at least one own and / or common optics for beam guidance, e.g. at least one Fresnel lens,
- organic LEDs can generally also be used.
- the at least one semiconductor light source may be e.g. have at least one diode laser.
- a surface which can be equipped with at least one semiconductor light source is equipped with at least one semiconductor light source, wherein
- At least one stop edge is located below an emitter surface of the at least one semiconductor light source.
- Luminous efficacy e.g. with a pigment mixed with white pigment
- TiO 2, ZrO 2, ZnO or BaSO 4 may be used as the white pigment.
- additives usable eg mineral additives and / or glass fibers.
- This embodiment is particularly suitable for a casting with a
- Wavelength conversion by means of at least one phosphor Wavelength conversion by means of at least one phosphor.
- Potting compound is poured to a certain height by a respective stop edge.
- at least one potting compound or at least one ply of a potting compound may also be assigned to no stop edge.
- the object is further achieved by a lighting device, in particular LED module, with at least one carrier as described above.
- Fig.l shows a sectional view in side view a
- Fig.l shows a lighting device 11 with a
- the carrier 12 in the form of a printed circuit board.
- the carrier 12 is at its front V with several
- the carrier 12 may be in plan view
- circular or angular e.g. symmetrical polygonal, in particular square, be configured (o.Fig.).
- a Aufsat zelement 14 with an annular, circumferential (closed) wall 15 has been placed tightly. This is done by a
- the stop edges 17, 18 are arranged one above the other, in such a way that the lower stop edge 17 is located below an upper-side emitter surface E of the LEDs 13.
- the upper stop edge 18 is located above the emitter surface E.
- the front V of the carrier 12 is potted with a first potting compound 19 up to a first height hl.
- the first height hl corresponds to at least approximately a height distance of the lower stop edge 17 to the front side V. Due to the lower stop edge 17, the first potting compound 19 is not on crawled up the inside I of the wall 15 so that it could spread evenly over the surface.
- Potting compound 19 here is a mixed with white pigment silicone.
- another suitable polymer may be generally used as a base material.
- Curing of the first potting compound 19 is a bottom plate with a high coverage ratio and thus a
- Luminous device 11 with a particularly high light output before.
- the front V of the carrier 12 within the attachment piece 14 is potted from the first height hl to a second, higher height h2 with a second potting compound 20.
- the second height h2 corresponds to at least about one
- the second potting compound 20 is not crawled on the inside I of the wall 15, so that they could spread evenly over the surface.
- the second potting compound 20 is here a silicon mixed with phosphor. However, as a base material, another suitable polymer may be generally used. After curing of the second potting compound 20, there is a wavelength conversion layer with a high coverage ratio for a uniform color distribution. 2 shows a lighting device 21 similar to the
- Lighting device 11 but now that the inside I of the wall 25 of the attachment piece 24 is not vertically upright, but at least on the forming a casting, located above the support 12 range from bottom to top (in the height, removing from the support 12) expands. This simplifies a bubble-free filling of the first potting compound 19th
- the lighting device 21 also has only one stop edge 26, which corresponds to the lower stop edge 17 of the lighting device 11. This may be advantageous, for example, in the case that the semiconductor light sources housed
- Semiconductor light sources are and already light one
- the lighting device may only have a stop edge which corresponds to the upper stop edge 18 of FIG.
- Lighting device 11 corresponds (o.Fig.).
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
L'invention concerne une pièce de recouvrement (14) destinée à être placée sur un support (12) d'un dispositif d'éclairage à semi-conducteurs (11), ledit support pouvant être équipé d'une source lumineuse à semi-conducteurs (13), et la pièce de recouvrement (14) présentant une paroi (15) qui comporte au moins un bord d'arrêt (17, 18) disposé côté intérieur. Cette invention concerne également un support (12) conçu pour un dispositif d'éclairage à semi-conducteurs (11), ce support (12) étant étanchéifié côté bord par une pièce de recouvrement (14), et ladite pièce de recouvrement (14) est plus haute qu'une surface (V) du support (12) qui peut être équipée d'au moins une source lumineuse à semi-conducteurs (13), de manière qu'au moins un bord d'arrêt (17, 18) soit disposé au-dessus de ladite surface (V) pouvant ainsi être équipée.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011084863.0 | 2011-10-20 | ||
DE102011084863 | 2011-10-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013056927A1 true WO2013056927A1 (fr) | 2013-04-25 |
Family
ID=47046529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2012/068150 WO2013056927A1 (fr) | 2011-10-20 | 2012-09-14 | Pièce de recouvrement conçue pour un support d'un dispositif d'éclairage à semi-conducteurs |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2013056927A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015036887A1 (fr) * | 2013-09-13 | 2015-03-19 | Koninklijke Philips N.V. | Boîtier à grille de connexions pour del à puce retournée |
DE102014205470B4 (de) * | 2014-03-24 | 2016-10-13 | Osram Gmbh | Leuchtvorrichtung mit CoB-Bereich |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121652A (ja) * | 1981-12-11 | 1983-07-20 | Fuji Electric Co Ltd | 混成集積回路装置 |
JPS6074655A (ja) * | 1983-09-30 | 1985-04-26 | Fuji Electric Co Ltd | 半導体装置 |
JPS60216570A (ja) * | 1984-04-12 | 1985-10-30 | Toshiba Corp | 半導体装置用外囲器のケ−ス |
DE19626082A1 (de) * | 1996-06-28 | 1998-01-02 | Siemens Ag | Bauelementgehäuse für eine Oberflächenmontage eines Halbleiter-Bauelementes |
WO2009066670A1 (fr) * | 2007-11-20 | 2009-05-28 | Nanoteco Corporation | Dispositif à led blanche et son procédé de fabrication |
US20100277932A1 (en) * | 2008-01-23 | 2010-11-04 | Helio Optoelectronics Corporation | Halation-Free Light-Emitting Diode Holder |
-
2012
- 2012-09-14 WO PCT/EP2012/068150 patent/WO2013056927A1/fr active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58121652A (ja) * | 1981-12-11 | 1983-07-20 | Fuji Electric Co Ltd | 混成集積回路装置 |
JPS6074655A (ja) * | 1983-09-30 | 1985-04-26 | Fuji Electric Co Ltd | 半導体装置 |
JPS60216570A (ja) * | 1984-04-12 | 1985-10-30 | Toshiba Corp | 半導体装置用外囲器のケ−ス |
DE19626082A1 (de) * | 1996-06-28 | 1998-01-02 | Siemens Ag | Bauelementgehäuse für eine Oberflächenmontage eines Halbleiter-Bauelementes |
WO2009066670A1 (fr) * | 2007-11-20 | 2009-05-28 | Nanoteco Corporation | Dispositif à led blanche et son procédé de fabrication |
US20100277932A1 (en) * | 2008-01-23 | 2010-11-04 | Helio Optoelectronics Corporation | Halation-Free Light-Emitting Diode Holder |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015036887A1 (fr) * | 2013-09-13 | 2015-03-19 | Koninklijke Philips N.V. | Boîtier à grille de connexions pour del à puce retournée |
US9698323B2 (en) | 2013-09-13 | 2017-07-04 | Koninklijke Philips N.V. | Frame based package for flip-chip LED |
DE102014205470B4 (de) * | 2014-03-24 | 2016-10-13 | Osram Gmbh | Leuchtvorrichtung mit CoB-Bereich |
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