WO2013048016A3 - 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법 - Google Patents

기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법 Download PDF

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Publication number
WO2013048016A3
WO2013048016A3 PCT/KR2012/006777 KR2012006777W WO2013048016A3 WO 2013048016 A3 WO2013048016 A3 WO 2013048016A3 KR 2012006777 W KR2012006777 W KR 2012006777W WO 2013048016 A3 WO2013048016 A3 WO 2013048016A3
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WO
WIPO (PCT)
Prior art keywords
supporting unit
substrate
substrate supporting
susceptor
processing device
Prior art date
Application number
PCT/KR2012/006777
Other languages
English (en)
French (fr)
Other versions
WO2013048016A2 (ko
Inventor
김해원
조성길
Original Assignee
유진테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유진테크 filed Critical 유진테크
Priority to US14/234,723 priority Critical patent/US9761473B2/en
Priority to CN201280039981.XA priority patent/CN103733328B/zh
Priority to JP2014523878A priority patent/JP5824582B2/ja
Publication of WO2013048016A2 publication Critical patent/WO2013048016A2/ko
Publication of WO2013048016A3 publication Critical patent/WO2013048016A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49764—Method of mechanical manufacture with testing or indicating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명의 일 실시예에 의하면, 기판지지유닛은 상부에 기판이 놓여지는 서셉터; 상기 서셉터의 상부에 놓여 상기 서셉터와 열접촉(thermal contact)하는 장착위치 및 상기 서셉터의 상부로부터 제거되는 해제위치로 전환되며, 상기 장착위치에서 상기 서셉터의 열을 흡수하는 하나 이상의 열흡수부재들; 그리고 상기 열흡수부재들이 선택적으로 삽입고정되는 복수의 고정슬롯들을 가지는 에지링을 포함한다.
PCT/KR2012/006777 2011-09-26 2012-08-24 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법 WO2013048016A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/234,723 US9761473B2 (en) 2011-09-26 2012-08-24 Substrate supporting unit and substrate processing apparatus manufacturing method of the substrate supporting unit
CN201280039981.XA CN103733328B (zh) 2011-09-26 2012-08-24 基板支撑单元、基板处理装置、及制造基板支撑单元的方法
JP2014523878A JP5824582B2 (ja) 2011-09-26 2012-08-24 基板支持ユニット及び基板処理装置，並びに基板支持ユニットの製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0096730 2011-09-26
KR1020110096730A KR101248881B1 (ko) 2011-09-26 2011-09-26 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법

Publications (2)

Publication Number Publication Date
WO2013048016A2 WO2013048016A2 (ko) 2013-04-04
WO2013048016A3 true WO2013048016A3 (ko) 2013-05-23

Family

ID=47996571

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/006777 WO2013048016A2 (ko) 2011-09-26 2012-08-24 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법

Country Status (6)

Country Link
US (1) US9761473B2 (ko)
JP (1) JP5824582B2 (ko)
KR (1) KR101248881B1 (ko)
CN (1) CN103733328B (ko)
TW (1) TWI474435B (ko)
WO (1) WO2013048016A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106337204B (zh) * 2015-07-17 2018-11-06 中国科学院苏州纳米技术与纳米仿生研究所 石墨托以及装有石墨托的晶体生长炉
KR101679237B1 (ko) * 2015-12-14 2016-12-06 이승영 심폐소생술 연습 기기
US20170207102A1 (en) * 2016-01-15 2017-07-20 Kabushiki Kaisha Toshiba Semiconductor manufacturing apparatus and semiconductor manufacturing method
DE102019126769A1 (de) * 2019-10-04 2021-04-08 Aixtron Se Prozesskammer mit selbstverschließendem Gasauslass
DE102020110570A1 (de) * 2020-04-17 2021-10-21 Aixtron Se CVD-Verfahren und CVD-Reaktor mit austauschbaren mit dem Substrat Wärme austauschenden Körpern
US11581213B2 (en) 2020-09-23 2023-02-14 Applied Materials, Inc. Susceptor wafer chucks for bowed wafers
US20220293453A1 (en) * 2021-03-12 2022-09-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090375A (ko) * 2000-03-25 2001-10-18 윤종용 웨이퍼 로딩장치
JP2003007694A (ja) * 2001-06-19 2003-01-10 Tokyo Electron Ltd 枚葉式の熱処理装置
KR20100014643A (ko) * 2007-03-28 2010-02-10 도쿄엘렉트론가부시키가이샤 Ｃｖｄ 성막 장치
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868847A (en) * 1994-12-16 1999-02-09 Applied Materials, Inc. Clamp ring for shielding a substrate during film layer deposition
US5632873A (en) * 1995-05-22 1997-05-27 Stevens; Joseph J. Two piece anti-stick clamp ring
JP3477953B2 (ja) * 1995-10-18 2003-12-10 東京エレクトロン株式会社 熱処理装置
TW418461B (en) * 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
US6168668B1 (en) * 1998-11-25 2001-01-02 Applied Materials, Inc. Shadow ring and guide for supporting the shadow ring in a chamber
US6364954B2 (en) * 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US6531069B1 (en) * 2000-06-22 2003-03-11 International Business Machines Corporation Reactive Ion Etching chamber design for flip chip interconnections
JP2003100713A (ja) * 2001-09-26 2003-04-04 Kawasaki Microelectronics Kk プラズマ電極用カバー
KR100439276B1 (ko) * 2003-11-24 2004-07-30 코닉 시스템 주식회사 급속열처리 장치
WO2010036707A2 (en) * 2008-09-26 2010-04-01 Lam Research Corporation Adjustable thermal contact between an electrostatic chuck and a hot edge ring by clocking a coupling ring

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090375A (ko) * 2000-03-25 2001-10-18 윤종용 웨이퍼 로딩장치
JP2003007694A (ja) * 2001-06-19 2003-01-10 Tokyo Electron Ltd 枚葉式の熱処理装置
KR20100014643A (ko) * 2007-03-28 2010-02-10 도쿄엘렉트론가부시키가이샤 Ｃｖｄ 성막 장치
KR100943427B1 (ko) * 2008-02-04 2010-02-19 주식회사 유진테크 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법

Also Published As

Publication number Publication date
US9761473B2 (en) 2017-09-12
TW201322364A (zh) 2013-06-01
JP5824582B2 (ja) 2015-11-25
TWI474435B (zh) 2015-02-21
CN103733328A (zh) 2014-04-16
US20140174356A1 (en) 2014-06-26
JP2014527716A (ja) 2014-10-16
KR101248881B1 (ko) 2013-04-01
WO2013048016A2 (ko) 2013-04-04
CN103733328B (zh) 2016-12-21

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