WO2013047851A1

WO2013047851A1 - Nanoimprinting method, nanoimprinting apparatus for executing the nanoimprinting method, and method for producing patterned substrates

Info

Publication number: WO2013047851A1
Application number: PCT/JP2012/075272
Authority: WO
Inventors: Kazuharu Nakamura; Satoshi Wakamatsu
Original assignee: Fujifilm Corporation
Priority date: 2011-09-29
Filing date: 2012-09-21
Publication date: 2013-04-04
Also published as: TW201323184A; JP5694889B2; TWI538797B; JP2013074258A

Abstract

To enable a resist pattern having dimensions different by a desired percentage(ΔDall) from the dimensions of a pattern of a mold under predetermined standard conditions(Pst,Tst) to be formed. The Young's modulus(Em) and the coefficient of thermal expansion(αm) of the mold(1) are different from those(Ei,αi) of the substrate(7). Resist(6) is cured within a pressure vessel while the pressure P inside the vessel and the temperature T of the assembly(8) are controlled to satisfy the next formula. ΔDall=(1/Ei-1/Em)･(P-Pst)+(αm-αi)･(T-Tst)

Description

DESCRIPTION

NANOIMPRINTING METHOD, NANOIMPRINTING APPARATUS FOR EXECUTING THE NANOIMPRINTINGMETHOD, ANDMETHOD FOR PRODUCING PATTERNED SUBSTRATES Technical Field

The present invention is related to a nanoimprinting method that employs a nanoimprinting mold having a fine pattern of protrusions and recesses on the surface thereof, a nanoimprinting apparatus for executing the nanoimprinting method, and a method for producing patterned substrates.

Background Art

There are high expectations regarding utilization of pattern transfer techniques that employ a nanoimprinting method to transfer patterns onto resist coated on objects to be processed, in applications to produce magnetic recording media such as DTM (Discrete Track Media) and BPM (Bit Patterned Media) and semiconductor devices.

Specifically, in nanoimprinting, an original (commonly referred to as a mold, a stamper, or a template) , on which a pattern of protrusions and recesses is formed, is pressed against curable resin coated on a substrate to be processed. Pressing of the original onto the curable resin causes the curable resin to mechanically deform or to flow, to precisely transfer the fine pattern. If a mold is produced once, nano level fine structures can be repeatedly molded in a simple manner. Therefore, the nanoimprinting method is an economical transfer technique that produces very little harmful waste and discharge. Therefore, there are high expectations with regard to application of the nanoimprintingmethod in various fields .

There are cases in which the dimensions of a pattern of protrusions and recesses -of a mold will vary from predetermined designed dimensions, depending on the environment (particularly the atmospheric pressure and the temperature of the mold) in which the mold is utilized. In such cases, techniques for forming resist films on substrates to be processed having resist patterns with the designed dimensions, utilizing a mold having a pattern with dimensions shifted from the predetermined designed dimensions will become necessary.

An example of such a technique is disclosed in Patent Document 1. Patent Document 1 discloses a method that adjusts the dimensions of a pattern of a mold 90, which has shifted from predetermined designed dimensions, by compressing the side walls of the mold 90 with a member 91 using mechanical external force F. [Prior Art Documents]

[Patent Documents]

[Patent Document 1]

Japanese Patent No. 4594305 The method disclosed in Patent Document 1 holds the side walls of the mold 90 and mechanically compresses the mold. Therefore, the manner of contraction is not necessarily uniform, and there is a problem that undulations 92 are generated in the mold 90, as illustrated in Figure 18. Although a system is provided for pressurizing or depressurizing the upper surface of the mold 90 in order to suppress such undulations, because pressure is applied to the entirety of the upper surface, the generation of localized undulations cannot be suppressed. In the case that a mold having such undulations is employed to execute a nanoimprinting operation, imprinting defects, such as fluctuations in the thickness of residual resist film, will occur.

In addition, there is a problem that thin molds having thicknesses of approximately several hundred pm will become damaged if the method disclosed in Patent Document 1 is applied thereto.

The present invention has been developed in view of the foregoing circumstances. It is an object of the present invention to provide a nanoimprinting method that enables a resist pattern having dimensions different by a desired percentage from the dimensions of a pattern of a mold under predetermined standard conditions. It is another object of the present invention to provide a nanoimprinting apparatus to be employed to execute the nanoimprinting method.

Further, it is still another object of the present invention to provide a method for producing patterned substrates using nanoimprinting that enables highly precise processing.

Disclosure of the Invention

A nanoimprinting method of the present invention that achieves the above ob ect is characterized by:

employing a mold having a fine pattern of protrusions and recesses with predetermined standard dimensions at a predetermined standard pressure and a predetermined standard temperature, and a substrate to be processed having a resist coating surface, the mold and the substrate to be processed having different Young's moduli and/or different coefficients of thermal expansion;

forming an assembly constituted by the mold, resist, and the substrate to be processed, by causing the pattern of protrusions and recesses to contact the resist, which is coated on the resist coating surface;

placing the assembly within a pressure vessel and curing the resist while the pressure P within the pressure vessel and the temperature T of the assembly are controlled to satisfy Formula 1 below when the percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions is designated as AD_an, the standard pressure is designated as P_st, the standard temperature is designated as T_st, the Young' s modulus of the mold is designated as E_m, the coefficient of thermal expansion of the mold is designated as a_m, the Young' s modulus of the substrate to be processed is designated as Ei, and the coefficient of thermal expansion of the substrate to be processed is designated as <¾_.; and separating the mold from the resist thereafter.

· (P-P_st) + (%,-¾)· (T-T_st) (1) In the present specification, the expression "standard dimensions" refers to the dimensions of the pattern of protrusions and recesses under standard conditions (the standard pressure and the standard temperature) .

The expression "percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions" refers to the percentage of the difference of the resist pattern and the standard dimensions under standard conditions.

In the nanoimprinting method of the present invention, it is preferable for:

control by pressure to be prioritized in cases that the pressure P within the pressure chamber is within a range from OMPa to 5MPa.

In the nanoimprinting method of the present invention, it is preferable for:

the pressure within the pressure vessel to be returned to atmospheric pressure after the mold is separated from the resist.

In the nanoimprinting method of the present invention, it is preferable for:

the temperature of the assembly to be returned to ambient temperature after the mold is separated from the resist.

In the nanoimprinting method of the present invention, it is preferable for:

placement of the assembly to be performed by supporting the assembly with a support member only at a portion of the assembly other than a portion corresponding to the pattern of protrusions and recesses. In this case, it is preferable for the support member to be of an annular shape, or to be constituted by three or more protrusions .

In the present specification, the "portion corresponding to the pattern" refers to a predeterminedportion of the assembly, which is a region in which the pattern of protrusions and recesses is formed and a portion onto which the region is projected in plan view (viewed from a direction perpendicular to the surface coated with resist) .

A nanoimprinting apparatus of the present invention is a nanoimprinting apparatus to be utilized to execute the nanoimprinting method of the present invention, characterized by comprising:

a pressure vessel for housing an assembly constituted by a mold having a fine pattern of protrusions and recesses -with predetermined standard dimensions at a predetermined standard pressure and a predetermined standard temperature, a substrate to be processed having a resist coating surface, and resist, formed by causing the pattern of protrusions and recesses to contact the resist, which is coated on the resist coating surface; and

a control means for controlling the pressure P within the pressure vessel and/or the temperature T of the assembly to satisfy Formula 2 below when the percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions is designated as AD_an, the standard pressure is designated as P_st, the standard temperature is designated as T_st, the Young's modulus of the mold is designated as E_m, the coefficient of thermal expansion of the mold is designated as a_m, the Young's modulus of the substrate to be processed is designated as Ei, and the coefficient of thermal expansion of the substrate to be processed is designated as (¾.

ADaii= (1/Ei-l/EJ · (P-P_at) + (Ofercxi) ' (T-Tst) (2)

In the nanoimprinting apparatus of the present invention, it is preferable for:

the control means to prioritize control by pressure in cases that the pressure P within the pressure chamber is within a range from OMPa to 5MPa.

It is preferable for the nanoimprinting apparatus of the present invention, to further comprise:

a support member for supporting the assembly provided within the pressure vessel; and for:

the assembly to be supported by the support member only at a portion of the assembly other than a portion corresponding to the pattern of protrusions and recesses. In this case, it is preferable for the support member to be of an annular shape, or to be constituted by three or more protrusions.

A method for producing patterned substrates of the present invention is characterized by:

forming a resist film, on which a pattern of protrusions and recesses has been transferred, on a substrate to be transferred by the nanoimprinting method of the present invention; and

performing etching using the resist film as a mask, to form a pattern of protrusions and recesses corresponding to the pattern of protrusions and recesses transferred to the resist film on the substrate to be processed.

The nanoimprinting method and the nanoimprinting apparatus of the present invention are characterized by: employing the mold having the fine pattern of protrusions and recesses with predetermined standard dimensions at the predetermined standard pressure and the predetermined standard temperature, and the substrate to be processed having the resist coating surface, the mold and the substrate to be processed having different Young's moduli and/or different coefficients of thermal expansion; and curing the resist while the pressure P within the pressure vessel and/or the temperature T of the assembly are controlled to satisfy Formula 1 above when the percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions is designated as AD_an, the standardpressure is designated as P_st, the standard temperature is designated as T_st, the Young's modulus of the mold is designated as E_m, the coefficient of thermal expansion of the mold is designated as _m, the Young's modulus of the substrate to be processed is designated as Ei, and the coefficient of thermal expansion of the substrate to be processed is designated as OL, to cure the resist. By this constitution, the differences between the degree of change due to expansion and contraction of the mold and the degree of change due to expansion and contraction of the substrate to be processed can be utilized to control the dimensions of the resist pattern. As a result, it becomes possible to form a resist pattern having dimensions which are different by a desired percentage from the dimensions of the pattern of the mold under certain standard conditions.

The method for producing patterned substrates of the present invention is characterized by: forming a resist film, on which a pattern of protrusions and recesses has been transferred, on a substrate to be transferred by the nanoimprinting method of the present invention; and performing etching using the resist film as a mask, to form a pattern of protrusions and recesses corresponding to the pattern of protrusions and recesses transferred to the resist film on the substrate to be processed. Because the resist pattern is formed by the nanoimprinting method of the present invention, the resist pattern is formed without any imprinting defects. As a result, highly precise processing is made possible in the production of patterned substrates employing nanoimprinting.

Brief Description of the Drawings

Figure 1 is a sectional diagram that schematically illustrates a nanoimprinting apparatus according to a first embodiment of the present invention.

Figure 2A is a perspective view that schematically illustrates an example of a mesa type mold.

Figure 2B is a sectional diagram that schematically illustrates a cross section of the mesa type mold taken along the line A-A of Figure 2A.

Figure 3A is a diagram in plan view that schematically illustrates a first embodiment of a setting stage for a substrate to be processed of the nanoimprinting apparatus of the present invention.

Figure 3B is a diagram in plan view that schematically illustrates a second embodiment of a setting stage for a substrate to be processed of the nanoimprinting apparatus of the present invention.

Figure 3C is a diagram in plan view that schematically illustrates a first embodiment of a supporting member for a mold of the nanoimprinting apparatus of the present invention. Figure 4A is a collection of sectional diagrams that schematically illustrates the steps of a nanoimprinting method according to a first embodiment of the present invention.

Figure 4B is a collection of sectional diagrams that schematically illustrates the steps of- the nanoimprinting method according to the first embodiment of the present invention.

Figure 5 is a sectional diagram that schematically illustrates the manner in which fluid pressure operates on an assembly in the present invention.

Figure 6 is a collection of sectional diagrams that schematically illustrates the manner in which a mold and a substrate to be processed having different Young' s moduli and/or coefficients of thermal expansion expand or contract.

Figure 7 is a diagram in plan view that schematically illustrates a third embodiment of a setting stage for a substrate of the nanoimprinting apparatus of the present invention.

Figure 8A is a sectional diagram that schematically illustrates the manner in which a mold and a substrate coated with curable resin are placed in contact with each other using a setting stage equipped with a first embodiment of a contacting mechanism.

Figure 8B is a sectional diagram that schematically illustrates the manner in which a mold and a substrate coated with curable resin are placed in contact with each other using a setting stage equipped with a second embodiment of a contacting mechanism.

Figure 9 is a sectional diagram that schematically illustrates a nanoimprinting apparatus according to a second embodiment of the present invention.

Figure 10A is a collection of sectional diagrams that schematically illustrates the steps of a nanoimprinting method according to a second embodiment of the present invention.

Figure 10B is a collection of sectional diagrams that schematically illustrates the steps of the nanoimprinting method according to the second embodiment of the present invention.

Figure 11 is a schematic diagram that illustrates the arrangement of a pattern of protrusions and recesses of a mold as viewed from the back surface thereof.

Figure 12 is a diagram that schematically illustrates the configuration of an alignment mark formed on a mold and resist.

Figure 13 is a schematic diagram that illustrates the arrangement of a resist pattern as viewed from the front surface thereof.

Figure 14 is a schematic diagram that illustrates the arrangement of a pattern of a reference substrate as viewed from the back surface thereof.

Figure 15 is a diagram that schematically illustrates the configurations of alignment marks formed on the reference substrate as viewed from the back surface thereof.

Figure 16 is a diagram that schematically illustrates a state in which two alignment marks are positioned with respect to each other.

Figure 17 is a diagram that schematically illustrates the manner in which moire patterns are overlapped.

Figure 18 is a diagram that schematically illustrates a conventional adjusting method for causing pattern dimensions of a mold which have shifted from predetermined designed dimensions to match the designed dimensions.

Best Mode for Carrying Out the Invention Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. However, the present invention is not limited to the embodiments to be described below. Note that the dimensions, etc. of the constituent elements within the drawings are different from the actual dimensions in order to facilitate visual understanding.

Figure 1 is a sectional diagram that schematically illustrates a nanoimprinting apparatus 100 according to a first embodiment of the present invention.

A nanoimprinting method of the present embodiment is executed using the nanoimprinting apparatus 100 illustrated in Figure 1. The nanoimprinting apparatus 100 of Figure 1 is equipped with: a pressure vessel 110; a gas introducing section 120 that introduces gas into the pressure vessel 110; an exhaust section 130 for exhausting gas from the interior of the pressure vessel 110; a setting stage 145 equipped with a substrate supporting member 140 for supporting a substrate 7 to be processed; a mold supporting member 150 for supporting a mold 1; a lamp heater 155; a light receiving device 161 for positioning a pattern of protrusions and recesses; and an exposure light source 162 for exposingphotocurable resin. Note that Figure 1 also illustrates the mold 1 having a pattern 13 of fine protrusions and recesses, and the substrate 7 to be processed, a surface of which is coated with photocurable resin 6. An assembly is formed by placing the mold 1 and the substrate 7 in contact such that the pattern 13 of protrusions and recesses and the photocurable resin 6 are in contact with each other.

(Mold)

Si is an example of the material of the mold. A Si mold is produced in the following matter, for example. First, Si base material is coated by a photoresist liquid having PMMA (Polymethyl Methacryiate) or the like as a main component by the spin coat method or the like, to form a photoresist layer. Next, an electron beam modulated corresponding to a predetermined line pattern is irradiated onto the Si base material while the Si base material is scanned on an XY stage, to expose a pattern ofprotrusions and recesses on the surface of the photoresist layer within a 10mm square region. Thereafter, the photoresist layer is developed to remove the exposed portions. Finally, etching is performed to a predetermined depth using the photoresist layer after the exposed portions are removed as a mask, to obtain a Si mold having the predetermined pattern.

Alternatively, a quartz substrate may be employed as the material of the mold 1. In the case that a fine pattern is to be formed on a quartz substrate, it is necessary to use a laminated structure constituted by a metal layer and a photoresist layer as the mask when processing the substrate. An example of a method for processing a quartz substrate is as follows. Dry etching is performed using a photoresist layer as a mask, to form a pattern of protrusions and recesses corresponding to apattern of protrusions and recesses formed in the photoresist layer on a metal layer. Then, dry etching is further performed on the quartz substrate using the metal layer as an etching stop layer, to form a pattern of protrusions and recesses on the quartz substrate. Thereby, a quartz mold having a predetermined pattern is obtained. Alternatively, pattern transfer using imprinting may be performed instead of electro beam lithography, as a method for forming the pattern.

A mesa type mold may also be utilized. A mesa type mold is that constituted in the manner of the mold 1 with a mesa structure as illustrated in Figures 2A and 2B, for example. Figure 2A is a perspective view that schematically illustrates the mesa type mold 1, and Figure 2B is a sectional diagram that schematically illustrates a cross section of the mesa type mold 1 taken along the line A-A of Figure 2A.

Specifically, the mold 1 illustrated in Figure 2A and Figure 2B is equipped with a planar support portion 11 and a mesa portion 12 provided on a surface SI (a base surface) of the support portion 11 and having a predetermined height D2 from the base surface SI. A patterned region Rl, in which a fine pattern 13 of protrusions and recesses is formed, is provided on the mesa portion 12.

In the case that a mesa type mold is utilized, there is an advantage that the range in which the curable resin flows can be restricted when the mold is pressed against curable resin which is coated on a substrate to be processed. The mesa type mold 1 may be produced by administering a mesa process (a process that removes substrate material about the periphery of a mesa portion such that the mesa portion remains) onto a planar substrate, and then by forming a pattern of protrusions and recesses on the surface of the mesa portion. In addition, patterns other thanpatterns to be transferred, such as alignment marks, may be formed in a region R2 outside the patterned region of the mesa portion 12.

The mold 1 illustrated in Figure 1 is a mesa type mold. Further, the mold 1 may be that which has undergone a mold release process to improve separation properties between the photocuring resin and the mold. Such a mold release process is executed employing silicone or fluorine silane coupling agents. Examples of silane coupling agents include Optool™ DSX by Daikin Industries K.K. and Novec™ EGC-1720 by Sumitomo 3M K.K. Alternatively, other commercially available mold release agents may be favorably employed.

In the mold 1, the support portion 11 and the mesa portion 12 are integrally formed, by the planar substrate undergoing the mesa process. As alternatives to the aforementioned quartz, the material of the mold 1 may be: a metal, such as silicon, nickel, aluminum, chrome, steel, tantalum, and tungsten; oxides, nitrides, and carbides of such metals; and resin. Specific examples of the material of the mold 1 include silicon oxide, aluminum oxide, quartz glass, Pyrex™, glass, and soda glass. The embodiment illustrated in Figure 1 performs exposure through the mold 1. Therefore, the mold 1 is formed by a light transmissive material. In the case that exposure is performed from the side of the substrate 7 to be processed, it is not necessary for the material of the mold 1 to be light transmissive.

The thickness Dl of the support portion 11 is within a range from 300um to 10mm, more preferably within a range from 350um to lmm, and most preferably within a range from 400um to 500um. If the thickness Dl is less than 300um, there is a possibility that the mold will be damaged during a mold separating process, and if the thickness Dl is greater than 10mm, flexibility that enables the mold to be subject to fluid pressure will be lost. The thickness D2 of the mesa portions 12 is within a range from lOOnm to 10mm, more preferably within a range from lum to 500um, and most preferably within a range from lOum to 50um.

(Substrate to be Processed)

The substrate 7 to be processed is a substrate for imprinting on which resist is coated. In the present invention, at least one of the Young's modulus and the coefficient of thermal expansion of the material of the substrate 7 to be processed is different from the Young's modulus and the coefficient of thermal expansion of the material of the mold. Examples of the material of the substrate include nickel, aluminum, glass, and resin. These materials may be utilized singly or in combination. By adopting this configuration, the degree of change of the mold 1 and the degree of change of the substrate 7 to be processed accompanying changes in pressure and/or temperature during an imprinting step will be different.

In the case that the mold 1 has light transmissive properties, the shape, the structure, the size, and the material of the substrate to be processed are not particularly limited, and may be selected as appropriate according to intended use. The surface of the substrate 7 to be processed on which the pattern is to be transferred is the surface which is coated with photocurable resin. For example, the substrate 7 to be processed is generally of a discoid shape in the case that nanoimprinting is performed to produce a data recording medium. With respect to the structure of the substrate, a single layer substrate may be employed, or a laminated substrate may be employed. The thickness of the substrate is not particularly limited, and may be selected according to intended use.

On the other hand, in the case that the mold 1 is not formed by a light transmissive material, a quartz substrate is employed to enable exposure of the photocurable resin.

(Pattern of Protrusions and Recesses)

The shape of the pattern 13 of protrusions and recesses is not particularly limited, and may be selected as appropriate according to the intended use of the nanoimprinting mold. An example of a typical pattern is a line and space pattern as illustrated in Figure 2B. The length of the lines, the width of the lines, the distance among the lines (the width of spaces) , and the height of the lines from the bottoms of the recesses are set as appropriate in the line and space pattern. For example, the width of the lines is within a range from lOnm to lOOnm, more preferably within a range from 20nm to lum, the distance among the lines is within a range from lOnm to lOOnm, more preferably within a range from 20nm to lum, and the height of the lines (the depth of the spaces) is within a range from lOnm to 500nm, more preferably within a range from 30nm to lOOnm.

(Pressure Vessel)

The pressure vessel 110 is constituted by a vessel main body

111 and a lid 112. The vessel main body 111 is equipped with an introducing inlet through which gas from the gas introducing section 120 is introduced, and an exhausting outlet through which gas is exhausted by the gas exhausting section 130. The introducing inlet and the exhausting outlet are connected to the gas introducing section 120 and the exhausting section 130 respectively. The lid

112 is equipped with a glass window 113 that enables positioning and exposure to be performed in a state in which the lid 112 is closed. However, the glass window 113 is not necessary in cases that positioning and exposure are performed in a state in which the lid 112 is open.

(Substrate Setting Stage and Substrate Support Member)

The setting stage 145 is for setting the substrate 7 to be processed thereon. The setting stage 145 is configured to be movable (including rotation in the present specification) in the x direction (the horizontal direction in Figure 1), the y direction (the direction perpendicular to the drawing sheet in Figure 1), the z direction (the vertical direction in Figure 1) , and the Θ direction (a rotational direction having an axis in the z direction as the center of rotation) so as to enable positioning with respect to the pattern of protrusions and recesses on the mold 1. In addition, the setting stage 145 is equipped with a substrate supporting member 140 which is movable in the z direction. The substrate supporting member 140 is utilized when lifting the substrate 7 to be processed, which is placed on the setting stage 145, up away from the setting stage 145, and also when supporting the assembly. The setting stage 145.may be configured with suctioning openings for suctioning and holding the substrate 7 to be processed and a heater for heating the substrate 7 to be processed.

Figure 3A is a diagram in plan view (a downward facing viewpoint in the z direction) that schematically illustrates a first embodiment of the setting stage 145 for the substrate 7 to be processed. Figure 3B is a diagram in plan view that schematically illustrates a second embodiment of the setting stage 145 for the substrate 7 to be processed.

The setting stage 145 illustrated in Figure 3A is equipped with a substrate supporting member 140 constituted by a plurality (4 in the present embodiment) dot shaped protrusions, and suctioning openings 146. It is preferable for the dot shaped protrusions to be configured such that the contact surface between them and the assembly 8 will be small, in order to enable the assembly 8 to be supported within the pressure vessel 110 such that fluid pressure of the environment operates on substantially the entire surface of the assembly 8. Specifically, the tips of the dot shaped protrusions may have radii of curvature such that the contact surfaces approximate points as much as possible. This configuration is preferable because if the areas of the contact surfaces become large, it will become difficult for fluid pressure to be applied isotropically to the assembly 8. The number of dot shaped protrusions is not particularly limited. 8 is preferable, 6 is more preferable, and 3 is most preferable.

Meanwhile, the setting stage 145 illustrated in Figure 3B is equippedwith a substrate supportingmember 140 constitutedby linear protrusions that form a ring, and suctioning openings 146. In Figure 3B, the substrate supporting member 140 is in the form of a broken ring shape. Alternatively, the substrate supporting member 140 may be in the form of a complete ring. It is preferable for the linear protrusions to be configured such that the contact surface between them and the assembly 8 is small, in order to enable the assembly 8 to be supported within the pressure vessel 110 such that fluid pressure of the environment operates on substantially the entire surface of the assembly 8. In this case as well, the tips of the linear protrusions may have radii of curvature such that the contact surfaces approximate points. The number of linear protrusions need only be that which enables formation of a single annular shape. It is preferable for the protrusions to be arranged such that they support only portions of the assembly 8 other than the portion thereof corresponding to the pattern. For example, in the case of the substrate supporting member 140 illustrated in Figure 3A, the substrate supporting member 140 constituted by the plurality of protrusions is arranged such that the assembly 8 is supported at portions other than the portion corresponding to the pattern, by arranging the plurality of protrusions at positions uniformly placed about the portion corresponding to the pattern. In the case of the substrate supporting member 140 illustrated in Figure 3B, the ring shaped substrate supporting member 140 is arranged such that the assembly 8 is supported at portions other than the portion corresponding to the pattern by arranging the portion corresponding to the pattern within the interior of the annular shape. These configurations are adopted such that fluid pressure is isotropically applied to the portion corresponding to the pattern, and to cause expansion or contraction of the mold 1 and the substrate 7 to be processed corresponding to the pattern to occur in a uniform manner. (Mold Supporting Member)

The mold supporting member 150 supports the mold 1 within the pressure vessel 110 to face the substrate 7 to be processed which is placed on the setting stage 145. Figure 3C is a diagram in plan view that schematically illustrates a first embodiment of a mold supporting member 150. As illustrated in Figure 3C, the mold supportingmember 150 is constituted by a ring portion 151 and support columns 152. The ring portion 151 may be in the shape of a discontinuous ring.

(Gas Introducing Section, Exhausting Section, and Lamp Heater)

The gas introducing section 120 is constituted by: a gas introducing pipe 121; a valve 122; and a gas introducing source (not shown) connected to the other end of the gas introducing pipe 121, for example. The exhausting section 130 is constituted by: an exhausting pipe 131; a valve 132; and an exhausting pump (not shown) , for example. Air and inert gases are examples of the gas to be introduced. Examples of inert gases include N₂; He; and Ar. Meanwhile, the lamp heater 155 is a heat source for heating the assembly 8. The lamp heater 155 may be provided within the pressure vessel 110 or outside the pressure vessel. Alternatively, the lamp heater 155 may be configured to be movable and provided directly above the setting stage 145 to irradiate light onto the assembly 8 only when necessary.

In the first embodiment, the gas introducing section 120, the exhausting section 130, the lamp heater 155, and a drive control section (not shown) for controlling the driving of these components function as the control means of the present invention.

(Light Receiving Device)

The light receiving device 161 is utilized when positioning the pattern of protrusions and recesses with respect to the substrate 7 to be processed in a state in which the mold 1 is supported by the mold supporting member 150 and the substrate 7 to be processed, the resist coating surface of which is coated with photocurable resin 6, is set on the setting stage 145. That is, the setting stage 145, which is movable in the x, y, z, and Θ directions, is adjusted while observing the pattern 13 of protrusions and recesses with the light receiving device 161 with the lid open 112 or through the glass window 113. The light receiving device 161 is also configured to be movable in the x, y, z, and Θ directions, from the viewpoint of operability of the apparatus. An optical microscope having a built in CCD may be utilized as the light receiving device 161.

(Exposure Light Source)

The exposure light source 162 is utilized to expose the photocurable resist 6. The exposure light source 162 is also configured to be movable in the x, y, z, and Θ directions, from the viewpoint of operability of the apparatus . A light source that emits light having a wavelength within a range from 300nm to 700nm produced by Sen Lights Corporation, for example, may be employed as the exposure light source 162.

Hereinafter, the nanoimprinting method will be described. Figures 4A and 4B are collections of sectional diagrams that schematically illustrate the steps of a nanoimprinting method according to a first embodiment of the present invention. In order to facilitate understanding of the drive procedures of the apparatus, only the setting stage 145, the mold supporting member 150, and other elements of the nanoimprinting apparatus 100 of Figure 1 which are necessary to explain the procedures employing these components are illustrated in Figures 4A and 4B. Note that in the following steps, it is assumed that the Young' s modulus of the mold 1 and the coefficient of thermal expansion of the mold 1 are different from the Young's modulus of the mold 1 and the coefficient of thermal expansion of the substrate 7 to be processed.

The nanoimprinting method of the first embodiment is executed as follows. First, a user determines the percentage of difference of a resist pattern to be formed from standard dimensions of a mold 1 under standard conditions. Then, the user sets the desired percentage (percentage AD_an of the difference in the dimensions of a resist pattern with respect to the standard dimensions) and other predetermined parameters in the drive control section that controls the gas introducing section 120, the exhausting section 130, and the lamp heater 155. The drive control section obtains a target pressure P within the pressure vessel 110 and/or a target temperature of the assembly 8 during imprinting from a predetermined relational formula based on the aforementioned parameters. Then, the lid 112 of the pressure vessel 110 is opened, the substrate 7 to be processed, the resist coating surface of which is coated with the photocurable resin 6, is set on the setting stage 145, and the mold 1 is placed on the mold supporting member 150 such that the pattern 13 of protrusions and recesses faces the photocurable resin 6 (a of Figure 4A) . Then, the pattern of protrusions and recesses is positioned with respect to the substrate 7 to be processed using the light receiving device 161. Next, the lid 112 of the pressure vessel 110 is closed, and the interior of the pressure vessel 110 is exhausted by the exhausting section 130. At this time, He may be introduced into the pressure vessel 110 after the lid 112 is closed. Then, the setting stage 145 is moved upward in the z direction until the photocurable resin 6 comes into contact with the pattern 13 of protrusions and recesses, to form the assembly 8 constituted by the mold 1, the photocurable resin 6, and the substrate 7 to be processed (b of Figure 4A) . At this time, the pattern 13 of protrusions and recesses is not completely filled by the photocurable resin 6, and portions thereof have unfilled locations . In addition, the assembly 8 at this time is in a state in which the mold 1, the photocurable resin 6, and the substrate 7 to be processed are merely assembled together, and therefore the entirety of the surface thereof is directly exposable to the environment. Thereafter, the substrate supporting member 140 is moved to lift the assembly 8 further upward in the z direction (c of Figure 4A) . Thereby, the mold 1 is separated from the mold supporting member 150, and the assembly 8 is in a state in which it is supported only by the substrate supporting member 140. The substrate supporting member 140 is constituted only by four dot shapedprotrusions, and the contact areas between the protrusions and the assembly 8 are extremely small. Therefore, the assembly 8 is supported such that fluid pressure of the environment operates on substantially the entire surface thereof. Gas is introduced by the gas introducing section 120 under control by the drive control section while the assembly 8 is supported such that fluid pressure of the environment operates on substantially the entire surface thereof. As a result, the mold 1 and the substrate 7 to be processed are pressed against each other by the fluid pressure exerted by the gas, and the photocurable resin 6 completely fills the pattern of protrusions and recesses (d of Figure 4B) . Then, ultraviolet light is irradiated onto the photocurable resin 6 within the assembly 8 to cure the photocurable resin 6, while the pressure P within the pressure vessel 110 and/or the temperature T of the assembly 8 are maintained at the previously obtained target values by the gas introducing section 120 and/or the lamp heater 155 under control of the drive control section. After transfer to and exposure of the photocurable resin 6 are completed, the substrate supporting member 140. is housed in the setting stage 145 (e of Figure 4B) . At this time, the assembly 8 is supported by the mold supporting member 150 and the setting stage 145. Next, the bottom surface of the substrate 7 to be processed (the surface opposite the resist coating surface) is suctioned and fixed onto the setting stage 145. Finally, the setting stage 145 is moved downward in the z direction while suctioning the substrate 7 to be processed, to separate the mold 1 and the cured photocurable resin 6 (f of Figure 4B) .

(Curable Resin)

The resist 6 is not particularly limited. In the present embodiment, a photocuring resin prepared by adding a photopolymerization initiator (approximately 2% by mass) and a fluorine monomer (0.1% to 1% by mass) to a polymerizable compound maybe employed. An antioxidant (approximately 1% by mass) may also be added as necessary. The photocuring resin produced by the above procedures can be cured by ultraviolet light having a wavelength of 360nm. With respect to resins having poor solubility, it is preferable to add a small amount of acetone or acetic ether to dissolve the resin, and then to remove the solvent. Note that the present embodiment utilizes a photocurable material as the material of the curable resin film, but the present invention is not limited to such a configuration, and alternatively, heat curable materials may be applied.

Examples of the polymerizable compound include: benzyl acrylate (Viscoat™ #160 by Osaka Organic Chemical Industries, K.K. ) , ethyl carbitol acrylate (Viscoat^ #190 by Osaka Organic Chemical Industries, K.K.), polypropylene glycol diacrylate (Aronix™ M-220 by TOAGOSEI K.K. ) , and trimethylol propane PO denatured triacrylate (Aronix™ M-310 by TOAGOSEI K.K.). In addition, a compound A represented by the following chemical formula (1) may also be employed as the polymerizable compound. [Chemical Formula 1]

Examples of the photopolymerization initiating agent include alkyl phenone type photopolymerization initiating agents, such as 2- (dimethyl amino) -2- [ (4-methylphenyl) methyl] -1- [4- (4-morpholinyl) phenyl] -1-butanone (IRGACURE™ 379 by Toyotsu Chemiplas K.K.) .

In addition, a compound B represented by the following chemical formula (2) may be employed as the fluorine monomer.

[Chemical Formula 2]

In the case that the photocurable resin is coated by the ink jet method, it is pre erable for a photocurable resin formedbymixing the compound represented by Chemical Formula (1), Aronix™ M-220, Irgacure™ 379, and the fluorine monomer represented by Chemical Formula (2) at a ratio of 48:48:3:1 to be utilized. On the other hand, in the case that the photocurable resin is coated by the spin coat method, it is preferable for a polymerizable compound diluted to 1% by mass with PGMEA (Propylene Glycol Methyl Ether Acetate) to be utilized as the photocurable resin.

(Method for Coating Curable Resin)

Coating of the resist 6 may be executed by utilizing the spin coat method, the dip coat method, the ink jet method, etc.

(Method for Controlling the Pressure within the Pressure Vessel and/or the Temperature of the Assembly)

The control means controls the pressure P within the pressure vessel 110 and/or the temperature T of the assembly 8 based on the set predetermined parameters such that Formula 2 below is satisfied. The predetermined parameters are : the percentage AD_an of the difference in the dimensions of a resist pattern with respect to the standard dimensions; a standard pressure P_st; a standard temperature T_st; the Young's modulus E_m of the mold; the coefficient of thermal expansion a_m of the mold; the Young' s modulus Ei of the substrate to be processed; and the coefficient of thermal expansion ofi of the substrate to be processed. However, in the case that only the pressure P within the pressure vessel 110 is controlled (that is, the temperature T is equal to the standard temperature T_st) , the coefficients of thermal expansion of the mold 1 and the substrate 7 to be processed are unnecessary. Similarly, in the case that only the temperature T of the assembly 8 is controlled (that is, the pressure P is equal to the standard pressure P_st) , the Young's moduli of the mold 1 and the substrate 7 to be processed are unnecessary.

· (P-P_st) + ( <%,-¾) · (T-T_st) (2)

In the present specification, the expression "standard dimensions" refers to the dimensions of the pattern 13 of protrusions and recesses of the mold 1 under standard conditions (the standard pressure and the standard temperature) . The specific position at which the dimensions are measured is not particularly limited. However, it is necessary to compare the dimensions of complementary corresponding positions of the pattern 13 of protrusions and recesses and the transferred resist pattern.

The standard conditions are determined based on the desired percentage of difference in the dimensions of the resist pattern to be formed with respect to the standard dimensions of the mold 1 under the standard conditions, that is, based on the dimensions of the resist pattern to be formed. For example, in the case that a resist pattern having dimensions different from the dimensions of the pattern 13 of patterns and protrusions of the mold 1 under ambient conditions (atmospheric pressure and room temperature) · by a desired percentage is to be formed, the standard pressure is atmospheric pressure, the standard temperature is room temperature, and the standard dimensions are the dimensions of the pattern 13 of protrusions and recesses under these conditions . Alternatively, the standard conditions maybe higher pressure and higher temperature conditions than ambient conditions, taking the conditions under which the mold 1 is actuallyutilized in consideration. In this case, the dimensions of the pattern 13 of protrusions and recesses under the high pressure and high temperature conditions are the standard dimensions .

The expression "percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions" refers to the percentage of the difference of the resist pattern and the standard dimensions under standard conditions. Specifically, the percentage AD_an is expressed by Formula 3 below.

(3)

In Formula (3) , D_st represents the dimensions (standard dimensions) of a predetermined region of the pattern 13 of protrusions and recesses under standard conditions, and D_r represents the dimensions of a region of the resist pattern corresponding to the predetermined pattern under standard conditions. Accordingly, the dimensions of the resist pattern are smaller than the standard dimensions D_st in the case that AD_a <0. Likewise, the dimensions of the resist pattern are greater than the standard dimensions D_st in the case that AD_an>0.

Formula 2 represents that the percentage AD_aU of the entirety of the difference in dimensions depend on the pressure P within the pressure vessel and/or the temperature T of the assembly 8 as long as at least one of (1/Ei-1/E_m) and (a_m-ai) is not zero, that is, as long as at least one of the Young's moduli and the coefficient of thermal expansion of the mold 1 and the substrate 7 to be processed are of different values . This is because the percentage of expansion or the percentage of contraction of the mold 1 and the substrate 7 to be processed respectively differ. The present invention utilizes this fact to enable a resist pattern having dimensions different by a desired percentage from the dimensions of a pattern of a mold under predetermined standard conditions.

Formula 2 is derived as follows.

First, Formula 4 is established from the definition of the percentage AD_an of the entirety of the difference in dimensions.

AD_ali=AD_P+ADr (4)

In Formula 4, AD_P is the percentage of difference in dimensions accompanying changes in the pressure P (the percentage of dimensional differences accompanying pressure changes) , andADr is the percentage of difference in dimensions accompanying changes in the temperature T (the percentage of dimensional differences accompanying temperature changes) . More specifically, the percentage Δϋ_Ρ of dimensional differences accompanying pressure changes and the percentage AD_T of dimensional differences accompanying temperature changes are respectively defined by Formula 5 and Formula 6 below.

That is, Formula 5 represents the percentage of dimensional difference Δϋ_Ρ accompanying pressure changes as the percentage of dimensional difference with respect to the standard dimensions D_st in the case that the pressure P and/or the temperature T is controlled, a resist pattern is formed, then only the pressure is changed to return the pressure to the standard pressure (that is, temperature T = constant) . In addition, Formula 6 represents the percentage of dimensional difference ADr accompanying temperature changes as the percentage of dimensional difference with respect to the standard dimensions D_st in the case that the pressure P and/or the temperature T is controlled, a resist pattern is formed, then only the temperature is changed to return the pressure to the standard temperature (that is, pressure P = constant) .

Then, after the resist 6 is cured, it is assumed that the resist 6 tracks expansion and contraction of the substrate 7 to be processed. In actuality, this assumption is proper, considering the flexibility of the resist 6. In this case, the percentage of dimensional difference AD_P accompanying pressure changes and the percentage of dimensional difference ΔΙ¼ accompanying temperature changes are obtained by Formula 7 and Formula 8 below.

~^εη ~~£pm

= AP/E_t-AP/E_m

=α,„·ΔΓ-α.Δ7'

= (α„_ί-α_/)(Γ-7_/) ₍₈₎

In Formula 7, ρ± represents the percentage (ppm) of the amount of distortion when the substrate 7 to be processed expands in the case that only the pressure is changed to return the pressure P to the standard pressure P_st (that is, temperature T = constant) after the resist pattern is formed. represents the percentage (ppm) of the amount of distortion'when the mold 1 expands in the case that only the pressure is changed to return the pressure P to the standard pressure P_st (that is, temperature T = constant) after the resist pattern is formed.

In Formula 8, εττη represents the percentage (ppm) of the amount of distortion when the mold 1 contracts in the case that only the temperature is changed to return the temperature T to the standard temperature T_st (that is, pressure P = constant) after the resist pattern is formed. E_Ti represents the percentage (ppm) of the amount of distortion when the substrate 7 to be processed contracts in the case that only the temperature is changed to return the temperature T to the standard temperature T_st (that is, pressure P = constant) after the resist pattern is formed.

Formula 2 is derived from Formula 4, Formula 7, and Formula

8.

In the present invention, it is preferable for control by pressure to be prioritized in the case that the pressure P within the pressure vessel 110 is within a range from OMPa to 5MPa. The expression "control by pressure to be prioritized" means that the target value for control by pressure during imprinting is determined first. For example, in the case that the pressure P is within a range from OMPa to 5MPa and Formula 2 above can be satisfied using only pressure, then only pressure is employed to cause the assembly 8 to expand or contract. In this case, AD_ai =AD_P. Alternatively, in the case that a desiredpercentage AD_a of the entirety of dimensional differences cannot be achieved only by controlling the pressure P within a range from OMPa to 5MPa, the insufficient portion is compensated for by controlling the temperature T.

The reason for adopting the above configuration is as follows. In order to realize the desired percentage AD_au of the entirety of dimensional differences according to Formula 2, two parameters, which are the pressure P and the temperature T, are controlled. Here, control of pressure and control of temperature respectively have merits and demerits. Specifically, the merit of controlling pressure is that the assembly can be uniformly pressurized by fluid pressure, enabling uniform dimensional adjustments . The demerit of controlling pressure is that it is not possible to increase gauge pressure to be greater than 5MPa, and that the range of dimensional adjustments is limited compared to cases in which temperature is controlled. The upper limit of the gauge pressure is set to 5MPa because there is a possibility that foreign objects interposed between the mold 1 and the substrate 7 to be processed will damage the mold 1 and the substrate 7 to be processed if pressure exceeds 5MPa.

Meanwhile, the merit of controlling temperature is that the range of dimensional adjustments is greater than cases in which pressure is controlled. The demerits of controlling temperature are that temperature fluctuations are generated within the assembly 8 during heating, resulting in difficulties in performing uniform dimensional adjustments, and that it takes time for target temperatures to be reached. The demerits of controlling temperature become particularly significant in cases that the material of the mold 1 or the substrate 7 to be processed is quartz.

Accordingly, control by pressure is prioritized in the case that the pressure P within the pressure vessel 110 is within a range from OMPa to 5MPa in order to enable uniform dimensional adjustments .

Figure 5 is a sectional diagram that schematically illustrates the manner in which fluid pressure PI and P2 operate on the assembly 8 within the pressure vessel 110, which is filled with gas, at the step illustrated in c of Figure 4A. In Figure 5, PI denotes fluid pressure which is applied onto the surface of the mold 1, and P2 denotes fluid pressure which is applied onto the surface of the substrate 7 to be processed and the surface of the resist 6. As illustrated in Figure 5, the entirety of the surface of the assembly 8 is directly exposable to the environment at the step illustrated in c of Figure 4A. In addition, the assembly 8 is supported by the substrate supporting member 140 constituted by the dot shaped protrusions such that fluid pressure of the environment operates on substantially the entire surface of the assembly 8. That is, uniform fluid pressure PI is applied to the surface of the assembly 8, and particularly a flange portion 15 of the mold 1, and uniform fluid pressure P2 is applied to the portion of the substrate 7 to be processed that faces the flange portion 15. Thereby, uniform dimensional adjustments become possible. In addition, the substrate supporting member 140 supports the assembly 8 at portions other than a portion 8a corresponding to the pattern. Thereby, external forces other than the fluid pressure PI and the fluid pressure P2 being applied to the portion 8a corresponding to the pattern is prevented.

(Mold Release)

In the nanoimprinting method of the present invention, it is preferable for the pressure P within the pressure vessel 110 to be returned to atmospheric pressure after the mold 1 is released, and also preferable for the temperature T of the assembly 8 to be returned to ambient temperature after the mold 1 is released. This is because uniform dimensional adjustments become possible by causing the resist 6 to track only the expansion or contraction of the substrate 7 to be processed.

It is preferable for the pressure vessel 110 to be filled with gas such that the pressure within the pressure vessel is within a range from 0. IMPa to 5MPa, more preferably within a range from 0.5MPa to 3MPa, and most preferably within a range from IMPa to 2MPa. The lower limit of the pressure is set to O.lMPa because if the pressure is less than O.lMPa, incomplete filling defects will occur due to residual gas not being pushed out of a patterned region Rl, residual gas not passing through a quartz substrate (in the case that the gas is He), or residual gas not dissolving in the resist 6. In addition, if the pressure is less than O.lMPa, the substrate 7 to be processed will not yield to the fluid pressure, and fluctuations in residual film will be likely to occur. On the other hand, the upper limit is set to 5MPa because if the pressure is greater than 5MPa, there is a possibility that the mold 1 and the substrate 7 to be processed will be damaged if a foreign object is interposed therebetween.

(Operational Effects of the Present Invention)

The operational effects of the present invention will be described hereinafter. Figure 6 is a collection of sectional diagrams that schematically illustrates the manner in which a mold and a substrate to be processed having different Young' s moduli and/or coefficients of thermal expansion expand or contract.

If the pressure P within the pressure vessel 110 increases in a state in which the assembly 8 constituted by the substrate 7 to be processed, the resist 6, , and the mold 1 is formed (a of Figure 6) , the assembly 8 will be compressed by fluid pressure and contract (b of Figure 6) . At this time, the degree of contraction will differ between the mold 1 and the substrate 7 to be processed, because the Young' s modulus of the mold 1 and the Young' s modulus of the substrate 7 to be processed are different. The resist 6 is cured in a state in which the assembly 8 is being compressed, then the mold 1 is separated from the resist 6, thereby transferring the pattern 13 of protrusions and recesses in a contracted state to the resist 6 (c of Figure 6) . At this time, the dimensions of the pattern 13 of protrusions and recesses and the dimensions of the resist pattern transferred to the resist 6 are the same. Thereafter, the mold 1 and the substrate 7 to be processed return to their original sizes when the pressure P is returned to the standard pressure. At this time, the resist 6 expands while tracking the expansion of the substrate 7 to be processed, because the resist 6 is in close contact with the substrate 7 to be processed (d of Figure 6) . Accordingly, the dimensions D_st and D_r of the two patterns, which were the same while the mold 1 and the substrate 7 to be processed were compressed, will become shifted by a percentage corresponding to the difference in the Young' s moduli of the mold 1 and the substrate 7 to be processed, due to the degrees of expansion thereof being different.

As described above, the nanoimprinting method and the nanoimprinting apparatus of the present invention utilizes the difference in the degrees of changes due to expansion and contraction of the mold and the substrate to be processed, to control the dimensions of the resist pattern. As a result, it becomes possible to form the resist pattern having dimensions different by a desired percentage from the dimensions of the pattern of the mold under predetermined standard conditions. <Design Modifications to the First Embodiment>

In the first embodiment, a case was described in which only the mold 1 has a mesa portion. The nanoimprinting method and the nanoimprinting apparatus of the present inventionmay also be applied in cases that only the substrate 7 to be processed has a mesa portion or both the substrate 7 to be processed and the mold 1 have mesa portions.

In the first embodiment, a case was described in which the mesa type mold 1 was utilized. However, the present invention may be applied to nanoimprinting utilizing common planar molds as well.

In addition, the mold 1 and the resist 6 were placed in contact while moving the substrate 7 to be processed with the setting stage 145 in the first embodiment. Alternatively, a configuration may be adopted wherein a pin 147 for pressing the central portion of the substrate 7 to be processed during contact is provided at the central portion of the setting stage 145, as illustrated in Figure 7 and Figure 8A. The mold 1 and the resist 6 are caused to contact each other by pressing the central portion of the substrate against the mold 1 with the pin 147 while the outer periphery of the substrate 7 to be processed is suctioned. Note that the pin 147 is retracted when gas is introduced into the pressure vessel 110 to cause fluid pressure to operate on the assembly 8. As another means for pressing the central portion of the substrate 7 to be processed against the mold 1 during contact, a second gas introducing section 148 may be provided in the central portion of the setting stage 145, as illustrated in Figure 8B. In this case, gas introduced through the second gas introducing section 148 is blown onto the substrate 7 to be processed.

Further, the mold 1 and the substrate 7 to be processed were respectively placed on the mold supporting member 150 and the setting stage 145 in the first embodiment. Alternatively, the mold 1 and the substrate 7 to be processed coated with the resist 6 may be placed in contact, that is, form the assembly 8, and then placed on the setting stage 145 in this state. <Second Embodiment of the Nanoimprinting Method and the Nanoimprinting Apparatus>

A second embodiment of the nanoimprinting method and the nanoimprinting apparatus of the present invention will be described with reference to Figures 9 through 10B. Figure 9 is a sectional diagram that schematically illustrates the nanoimprinting apparatus according to the second embodiment of the present invention. Figure 10A and Figure 10B are collections of sectional diagrams that schematically illustrate the steps of the nanoimprinting method according to the second embodiment of the present invention. Note that the configurations of a setting stage for a substrate and a substrate supporting member of the second embodiment differ from those of the first embodiment, and a heating means such as a lamp heater are not provided. Accordingly, detailed descriptions of elements which are the same as those of the first embodiment will be omitted insofar as they are not particularly necessary.

(Nanoimprinting Apparatus)

First, a nanoimprinting apparatus for executing the nanoimprinting method according to the second embodiment will be described. The nanoimprinting method of the second embodiment is executing employing a nanoimprinting apparatus 200 illustrated in Figure 9. The nanoimprinting apparatus 200 of Figure 9 is equipped with: a pressure vessel 210; a gas introducing section 220 that introduces gas into the pressure vessel 210; an exhaust section 230 for exhausting gas from the interior of the pressure vessel 210; a substrate supporting member 240 for supporting a substrate 7 to be processed; a substrate setting stage 245 on which the substrate 7 to be processed is set; a mold supporting member 250 for supporting a mold 1; a light receiving device 261 for positioning a pattern of protrusions and recesses; and an exposure light source 262 for exposing resist.

(Mold and Substrate to be Processed)

In the second embodiment, the Young' s modulus of the mold 1 and the Young's modulus of the substrate 7 to be processed are different. Note that the coefficients of thermal expansion of the mold 1 and the substrate 7 to be processedmaybe the same or different. (Substrate Setting Stage)

The setting stage 245 is for setting the substrate 7 to be processed on. The setting stage 245 is configured to be movable in the x direction (the horizontal direction in Figure 9) , the y direction (the directionperpendicular to the drawing sheet in Figure 7), the z direction (the vertical direction in Figure 9), and the Θ direction (a rotational direction having an axis in the z direction as the center of rotation) so as to enable positioning with respect to the pattern of protrusions and recesses on the mold 1. The setting stage 245 may be configured with suctioning openings for suctioning and holding the substrate 7 to be processed and a heater for heating the substrate 7 to be processed.

(Substrate Supporting Member)

The substrate supporting member 240 is utilized when lifting the substrate 7 to be processed, which is placed on the setting stage 245, up away from the setting stage 245, and also when supporting an assembly 8. The substrate supporting member 240 is configured to be movable at least in the z direction, similar to the setting stage 245. The substrate supporting member 240 of the second embodiment is constituted by a ring portion 241 and support columns 242 similar to the mold supporting member 250, as illustrated in Figure 9 and Figure 10A. The ring portion 241 may be in the form of a broken ring shape.

(Gas Introducing Section and Exhausting Section)

The gas introducing section 220 and the exhausting section 230 are the same as those of the first embodiment. The second embodiment is not provided with a heating means. Therefore, the gas introducing section 220, the exhausting section 230, and a drive control section (not shown) for controlling the driving of these components function as the control means of the present invention. (Nanoimprinting Method)

In order to facilitate understanding of the drive procedures of the apparatus, only the setting stage 245, the substrate supporting member 240, the mold supporting member 250, and elements necessary to explain the procedures employing these components are illustrated in Figures 10A and 10B. Note that in the following description, ambient conditions (atmospheric pressure and room temperature) are designated as the standard conditions.

The nanoimprintingmethod of the second embodiment is executed as follows. First, a user determines the percentage of difference of a resist pattern to be formed from standard dimensions of a mold 1 under standard conditions. Then, the user sets the desired percentage and other predetermined parameters in the drive control section that controls the gas introducing section 220 and the exhausting section 230. The drive control section obtains a target pressure P within the pressure vessel 210 during imprinting from a predetermined relational formula based on the aforementioned parameters. Then, a lid 212 of the pressure vessel 210 is opened, the substrate 7 to be processed, a surface of which is coated with resist 6, is set on the setting stage 245, and the mold 1 is placed on the mold supporting member 250 such that a pattern of protrusions and recesses faces the resist 6 (a of Figure 10A) . Then, the pattern of protrusions and recesses is positioned with respect to the substrate 7 to be processed using the light receiving device 261. Next, the lid 212 of the pressure vessel 210 is closed, and the interior of the pressure vessel 210 is exhausted by the exhausting section 230. At this time, He may be introduced into the pressure vessel 210 after the lid 212 is closed. Then, the setting stage 245 is moved upward in the z direction until the resist 6 comes into contact with the pattern 13 of protrusions and recesses of the mold 1, to form the assembly 8 constituted by the mold 1, the resist 6, and the substrate 7 to be processed (b of Figure 10A) . At this time, the pattern 13 of protrusions and recesses is not completely filled by the resist 6, and portions thereof have unfilled locations. In addition, the assembly 8 at this time is in a state in which the mold 1, the resist 6, and the substrate 7 to be processed are merely assembled together, and therefore the entirety of the surface thereof is directly exposable to the environment . Thereafter, the substrate supporting member 240 is moved to lift the assembly 8 further upward in the z direction (c of Figure 10A) . Thereby, the mold 1 is separated from the mold supporting member 250, and the assembly 8 is in a state in which it is supported only by the substrate supporting member 240. The substrate supporting member 240 is constituted by the ring portion 241 and the support columns 242, and the contact area between the ring portion 241 and the assembly 8 is an extremely small area at the outer periphery of the assembly 8. Therefore, the assembly 8 is supported such that fluid pressure of the environment operates on substantially the entire surface thereof. Gas is introduced by the gas introducing section 220 while the assembly 8 is supported such that fluidpressure of the environment operates on substantially the entire surface thereof. As a result, the mold 1 and the substrate 7 to be processed are pressed against each other by the fluid pressure exerted by the gas, and the resist 6 completely fills the pattern of protrusions and recesses (d of Figure 10B) . Then, ultraviolet light is irradiated onto the resist 6 within the assembly 8 to cure the resist 6, while the gas introducing section 220 maintains the pressure P within the pressure vessel 210 at the previously obtained target value under control by the drive control section. After transfer to and exposure of the resist 6 are completed, the substrate supporting member 240 is moved downward, in the z direction and returned to its original position (e of Figure 10B) . At this time, the assembly 8 is supported by the mold supporting member 250 and the setting stage 245. Thereafter, the mold 1 and the cured resist 6 are separated in the same manner as in the first embodiment. Finally, the conditions of the assembly are returned to the standard conditions .

Note that it is preferable to install a cold filter between the exposure light source 262 and the assembly 8 when exposing the resist 6, to prevent the temperature of the assembly 8 from increasing during exposure.

The second embodiment performs dimensional adjustments using only control by pressure. This is because the second embodiment employs ambient conditions as the standard conditions, resulting in the temperature T of the assembly 8 not changing from the standard temperature (room temperature) . Accordingly, the second term of Formula 2 can be ignored.

As described above, the nanoimprinting method and the nanoimprinting apparatus of the second embodiment employ the mold having the fine pattern of protrusions and recesses with predetermined standard dimensions at the predetermined standard pressure and the predetermined standard temperature, and the substrate to be processed having the resist coating surface, the mold and the substrate to be processed having different Young's moduli; and cure the resist while the pressure within the pressure vessel is controlled to satisfy a predetermined relational formula utilizing predetermined parameters. Accordingly, the same advantageous effects as those obtained by the nanoimprinting method of the first embodiment can be obtained.

Next, a method for producing patterned substrates according to an embodiment of the present invention will be described. In the present embodiment, the nanoimprinting methods described above are employed to produce the patterned substrates.

First, a resist film, on which a pattern has been formed by the nanoimprinting method described above, is formed on a surface of a substrate to be processed. Then, the substrate to be processed is etched using the resist film having the pattern formed thereon as amask, to form a pattern of protrusions and recesses corresponding to the pattern of protrusions and recesses of the resist film. Thereby, a patterned substrate (copy) having a predetermined pattern is obtained.

In the case that the substrate to be processed is of a laminated structure and includes a mask layer on the surface thereof, a resist film, on which a pattern has been formed by the nanoimprinting method described above, is formed on a surface of a substrate to be processed having the mask layer. Then, dry etching is performed using the resist film as a mask, to form a pattern of protrusions and recesses corresponding to the pattern of protrusions and recesses of the resist film in the mask layer. Thereafter, dry etching is further performed with the mask layer as an etching stop layer, to form a pattern of protrusions and recesses in the substrate. Thereby, a substrate having a predetermined pattern is obtained.

The dry etching method is not particularly limited as long as it is capable of forming a pattern of protrusions and recesses in the substrate, and may be selected according to intended use. Examples of dry etching methods that may be employed include: the ion milling method; the RIE (Reactive Ion Etching) method; the sputter etching method; etc. From among these methods, the ion milling method and the RIE method are particularly preferred.

The ion milling method is also referred to as ion beam etching. In the ion milling method, an inert gas such as Ar is introduced into an ion source, to generate ions. The generated ions are accelerated through a grid and caused to collide with a sample substrate to perform etching. Examples of ion sources include: Kauffman type ion sources; high frequency ion sources; electron bombardment ion sources; duoplasmatron ion sources; Freeman ion sources; and ECR (Electron Cyclotron Resonance) ion sources.

Ar gas may be employed as a processing gas during ion beam etching. Fluorine series gases or chlorine series gases may be employed as etchants during RIE.

As described above, the method for producing patterned substrates of the present invention is executed employing the nanoimprinting method that controls the dimensions of the resist pattern. Therefore, high precision processing becomes possible in the production of patterned substrates.

[Examples]

Examples of the nanoimprinting method of the present invention will be described below.

In Example 1, a quartz mold was utilized as the mold, and a Si substrate was utilized as the substrate to be processed. The Young's modulus E_m of the quartz mold was 72GPa and the coefficient of thermal expansion a_m of the quartz mold was 5.5-10^"7/°C. The Young' s modulus Ei of the Si substrate was 185GPa and the coefficient of thermal expansion oa of the Si substrate was 2.6· 10⁶/-°C. Formula 9 was obtained by substituting these values into Formula 2.

ΔΟ_3ΐ1=-8.48·10^"3·σ-2.05·10^~6·ΔΤ (9)

Note that in Formula 9, a represents a gauge pressure and ΔΤ represents a temperature difference obtained by subtracting room temperature from the temperature of the assembly.

Photocurable resist was coated on the Si substrate having a diameter of 4 inches, to coat the Si substrate with a photocurable resist layer. The mold was produced based on a quartz substrate having a diameter of 6 inches, a thickness of 0.525mm, and the pattern illustrated in Figure 11 formed thereon. Arnold release process was administered on the quartz mold.

In Example 1, imprinting was executed such that the dimensions of a resist pattern formed by imprinting will be 5ppm smaller than the dimensions of the pattern of protrusions and recesses on the quartz mold under ambient conditions, by adjusting only the gauge pressure within the pressure vessel during imprinting. If AD_aii=5-10^~6 and ΔΤ=0 are substituted into Formula 9, the value of σ is calculated to be 0.59MPa.

Then, imprinting was executed as follows under ambient conditions (room temperature = 25°C) . The quartz mold was caused to lightly contact the photocurable resist layer, to form an assembly. Then, the assembly was placed in the pressure vessel. Further, air was introduced into the pressure vessel such that the pressure of the air became a gauge pressure of 0.59MPa, to pressurize the assembly. At this time, the temperature of the assembly was 25°C. Thereafter, the photocurable resist layer was exposed. The temperature of the assembly during exposure was 25°C. Next, pressure was reduced to atmospheric pressure, and then the quartz mold and the photocurable resist were separated. Details regarding the quartz mold, the photocurable resist, the resist pattern, the Si substrate, and each of the steps are as follows. (Quartz Mold)

The pattern arrangement of the quartz mold is as illustrated in Figure 11. Figure 11 is a schematic diagram that illustrates the arrangement of the pattern of protrusions and recesses of the mold as viewed from the back surface thereof. Specifically, four alignment marks AMI in the form of cruciform patterns having pattern depths of lOOnm, in which lines having lengths of 55um and line widths of lOum are crossed, are provided (Figure 12) . In addition, grating patterns (Wl, XI, Yl, andZl) are provided toward the outer peripheral sides of each of the alignment marks AMI. A narrow pitch pattern Gl having a pattern depth of lOOnm, in which lines having widths of 0.95um are arranged at a pitch of 1.9um, and a wide pitch pattern G2 having a pattern depth of lOOnm in which lines having widths of l.Oum are arranged as a pitch of 2.0um, are arranged parallel to each other in each of the grating patterns (Figure 11) . The distance between the centers of the grating patterns Wl and Yl and the distance between the centers of the grating patterns XI and Zl are both 60mm (Figure 11) .

(Photocurable Resist)

Amixture of the compound represented by Chemical Formula (1) ,

Aronix M-220, Irgacure 379, and the fluorine monomer represented by Chemical Formula (2) at a ratio of 48:48:3:1 was employed as the photocurable resist.

(Resist Pattern)

In the case that imprinting employing the quartz mold described above is executed, a resist pattern such as that illustrated in Figure 13 is formed. Figure 13 is a schematic diagram that illustrates the arrangement of the resist as viewed from the front surface thereof. The resist pattern is a pattern of protrusions and recesses transferred from the quartz mold. Specifically, four alignment marks AMI in the form of cruciform patterns having pattern heights of lOOnm, in which lines having lengths of 55um and line widths of lOum are crossed, are provided (Figure 12). In addition, grating patterns (W2, X2, Y2, and Z2) are provided toward the outer peripheral sides of each of the alignment marks AMI . Anarrow pitch pattern Gl having a pattern height of lOOnm, in which lines having widths of 0.95um are arranged at a pitch of 1.9um, and a wide pitch pattern G2 having a pattern height of lOOnm in which lines having widths of 1. Oum are arranged as a pitch of 2. Oum, are arranged parallel to each other in each of the grating patterns (Figure 13) . The distance between the centers of the grating patterns W2 and Y2 and the distance between the centers of the grating patterns X2 and Z2 are both 60mm (Figure 13) .

(Si Substrate)

ASi substrate, the surface of whichwas processedwith a silane coupling agent having superior adhesive properties with respect to photocurable resist, was utilized. The surface was processed by- diluting the silane coupling agent, coating the surface of the substrate with the diluted silane coupling agent by the spin coat method, and then by annealing the coated surface.

(Photocurable Resist Coating Step)

DMP-2831, which is an ink jet printer of the piezoelectric type by FUJIFILM Dimatix, was utilized. A dedicated lOpl head was utilized as an ink jet head.

(Mold Contacting Step)

The quartz mold and the Si substrate were caused to approach each other, and positioning was performed while observing the alignment marks with an optical microscope from the back surface of the quartz mold such that the alignment marks were at predetermined positions.

(Exposure Step)

Exposure was performed by ultraviolet light that includes a wavelength of 360nm at an irradiation dosage of 300mJ/cm². A cold filter was installed between the exposure light source and the quartz mold/Si substrate, to prevent the temperatures of the quartz mold and the Si substrate from increasing during exposure.

A quartz mold was utilized as the mold and a Si substrate was utilized as the substrate to be processed in the same manner as in Example 1. Photocurable resist was coated on the Si substrate having a diameter of 4 inches, to coat the Si substrate with a photocurable resist layer. The mold was produced based on a quartz substrate having a diameter of 6 inches, a thickness of 0.525mm, and the pattern illustrated in Figure 11 formed thereon. Arnold release process was administered on the quartz mold.

In Example 2, imprinting was executed such that the dimensions of a resist pattern formed by imprinting will be lOOppm smaller than the dimensions of the pattern of protrusions and recesses on the quartz mold under ambient conditions, by adjusting the gauge pressure within the pressure vessel and the temperature of the assembly during imprinting. At this time, the gauge pressure is set to 5MPa. In this case, the value of the first term in Formula 9 will be -42.4, which is less than the target value of lOOppm. Accordingly, AD_a =100' 10^"6 and σ=5.0 are substituted into Formula 9, to calculate a value ΔΤ of 28.1°C.

Then, imprinting was executed as follows under ambient conditions (room temperature = 25°C) . The quartz mold was caused to lightly contact the photocurable resist layer, to form an assembly. Then, the assembly was placed in the pressure vessel. Further, air was introduced into the pressure vessel such that the pressure of the air became a gauge pressure of 5. OMPa, to pressurize the assembly. At this time, the temperature of the assembly was 25°C. Further, the assembly was heated such that the temperature thereof became 53.1°C with the lamp heater. Thereafter, the photocurable resist layer was exposed. The temperature of the assembly during exposure was 53.1°C. Next, pressure was reduced to atmospheric pressure, the temperature of the assembly was returned to room temperature, and then the quartz mold and the photocurable resist were separated. Details regarding the quartz mold, the photocurable resist, the resist pattern, the Si substrate, and each of the steps are the same as those of Example 1.

In Example 3, a quartz mold was utilized as the mold, and a Ni substrate was utilized as the substrate to be processed. The Young's modulus E_m of the quartz mold was 72GPa and the coefficient of thermal expansion a_m of the quartz mold was 5.5· 10^~7/°C. The Young' s modulus Ei of the Ni substrate was 200GPa and the coefficient of thermal expansion α_± of the Ni substrate was 13.4-10^""6/-°G. Formula 10 was obtained by substituting these values into Formula 2.

· 10^~3· σ-12.9 · 10^~6· ΔΤ (10) Photocurable resist was coated on the Ni substrate having a diameter of 4 inches, to coat the Ni substrate with a photocurable resist layer. The mold was produced based on a quartz substrate having a diameter of 6 inches, a thickness of 0.525mm, and the pattern illustrated in Figure 11 formed thereon. Arnold release process was administered on the quartz mold.

In Example 3, imprinting was executed such that the dimensions of a resist pattern formed by imprinting will be lOppm smaller than the dimensions of the pattern of protrusions and recesses on the quartz mold under ambient conditions, by adjusting only the gauge pressure within the pressure vessel during imprinting. If AD_aii=10" 10^"6 and ΔΤ=0 are substituted into Formula 10, the value of σ is calculated to be 1.12MPa.

Then, imprinting was executed as follows under ambient conditions (room temperature = 25°C) . The quartz mold was caused to lightly contact the photocurable resist layer, to form an assembly. Then, the assembly was placed in the pressure vessel. Further, air was introduced into the pressure vessel such that the pressure of the air became a gauge pressure of 1.12MPa, to pressurize the assembly. At this time, the temperature of the assembly was 25°C. Thereafter, the photocurable resist layer was exposed. The temperature of the assembly during exposure was 25°C. Next, pressure was reduced to atmospheric pressure, and then the quartz mold and the photocurable resist were separated. Details regarding the quartz mold, the photocurable resist, the resist pattern, the Ni substrate, and each of the steps are the same as those of Example 1. Comparative Example 1>

Imprinting was performed in the same manner as that of Example 1, except that a quartz substrate having a diameter of 4 inches was' utilized as the substrate coated with resist.

Evaluations regarding the degree of decrease of the dimensions of the resist patterns formed by the Examples and the Comparative Example with respect to the dimensions of the pattern of protrusions and recesses of the molds were performed by comparing grating patterns formed on quartz reference substrates having diameters of 6 inches and the grating patterns within the resist patterns.

Specifically, the evaluations were performed as follows. First, the reference substrates were prepared. Figure 14 is a schematic diagram that illustrates the arrangement of a pattern of a reference substrate as viewed from the back surface thereof. Specifically, four alignment marks AM2 having pattern depths of lOOnm, in which four squares are arranged in a grid are provided (Figure 15) . The size of each of the alignment marks AM2 is 55um in both the vertical and horizontal directions, and the intervals among the squares are 13um. In addition, grating patterns (W3, X3, Y3, and Z3) are provided toward the outer peripheral sides of each of the alignment marks AM2. Anarrowpitch pattern Gl having a pattern depth of lOOnm, in which lines having- idths of 0.95um are arranged at a pitch of 1.9um, and a wide pitch pattern G2 having a pattern depth of lOOnm in which lines having widths of l.Oum are arranged as a pitch of 2.0um, are arranged parallel to each other in each of the grating patterns (Figure 14) .

In the reference substrate utilized to evaluate Example 1 and Comparative Example 1, the distance between the centers of the grating patterns W3 and Y3, and the distance between the centers of the grating patterns X3 and Z3 are 5ppm smaller than the corresponding grating patterns in the pattern of protrusions and recesses of the quartz mold. That is, the distances between the centers of the grating patterns are 60mm-300nm (Figure 14) . In addition, the distances between opposing pairs of alignment marks AM2 (for example, the alignment marks formed in the vicinities of the grating patterns W3 and Y3) are 5ppm smaller than the distances between opposing alignment marks AMI (for example, the alignment marks formed in the vicinities of the grating patterns Wl and Yl) formed in the quartz mold.

In the reference substrate utilized to evaluate Example 2, the distance between the centers of the grating patterns W3 and Y3, and the distance between the centers of the grating patterns X3 and Z3 are lOOppm smaller than the corresponding grating patterns in the pattern of protrusions and recesses of the quartz mold. That is, the distances between the centers of the grating patterns are 60mm-6um. In addition, the distances between opposing pairs of alignment marks AM2 are lOOppm smaller than the distances between opposing alignment marks AMI formed in the quartz mold.

In the reference substrate utilized to evaluate Example 3, the distance between the centers of the grating patterns W3 and Y3, and the distance between the centers of the grating patterns X3 and Z3 are lOppm smaller than the corresponding grating patterns in the pattern of protrusions and recesses of the quartz mold. That is, the distances between the centers of the grating patterns are 60mm-600nm. In addition, the distances between opposing pairs of alignment marks AM2 are lOppm smaller than the distances between opposing alignment marks AMI formed in the quartz mold.

Next, shifts in dimensions were confirmed. The confirmations were performed under ambient conditions (room temperature = 25°C) . The reference substrates were caused to approach the resist on which resist patterns were formed until the distances between the resist and the reference substrates were 20um. Then, positional alignment was performed such that the alignment marks AMI formed in the resist pattern combined with the alignment marks AM2 formed in the reference substrates, while observing the alignment marks from the back surfaces of the reference substrates with an optical microscope. At this time, the distances among the protruding portions in the upper, lower, left, and right directions of the alignment marks AMI and the alignment marks AM2 were 1.6um (Figure 16) . Thereafter, the distance between the resist and the reference substrates were set to lOum or less.

After the above adjustments were completed, Moire fringes such as that illustrated in Figure 17 are observed at each of the four regions at which the grating patterns are formed (that is, regions at which the grating patterns W2 and W3, X2 and X3, Y2 and Y3, and Z2 and Z3 are overlapped) .

Then, positional alignment was performed such that the positions of the Moire fringes observed at the regions at which W2 and W3 are overlapped became the same, while observing the grating patterns from the back surfaces of the reference substrates. Next, amounts ΔΥ of positional shifting of observed Moire fringes were measured at the regions at which Y2 and Y3 are overlapped became the same, while observing the grating patterns from the back surfaces of the reference substrates (Figure 17) . Thereafter, amounts Ay of relative shifting of the grating patterns Gl and G2 at these regions were calculated from the amounts ΔΥ of positional shifting.

Meanwhile, positional alignment was performed such that the positions of the Moire fringes observed at the regions at which X2 and X3 are overlapped became the same, while observing the grating patterns from the back surfaces of the reference substrates. Next, amounts ΔΧ of positional shifting of observed Moire fringes were measured at the regions at which Z2 and Z3 are overlapped became the same, while observing the grating patterns from the back surfaces of the reference substrates (Figure 17) . Thereafter, amounts Δχ of relative shifting x of the grating patterns Gl and G2 at these regions were calculated from the amounts ΔΧ of positional shifting.

After calculating the amounts of relative shifting Δχ and Δγ, cases in which the amounts of relative shifting satisfied the inequalities -30nm≤Ax 30nm and -30nm≤Ay≤30nm were evaluated as having performed dimensional adjustments. Other cases were evaluated as not having performed dimensional adjustments. The aforementioned measurement method utilizing Moire fringes is described in detail in Japanese Unexamined Patent Publication No. 2010-267682, for example. <Evaluation Results>

Table 1 summarizes the evaluation results for the Examples and the Comparative Example. With respect to the item "Dimensional Adjustment", an evaluation of "YES" indicates that dimensional adjustment was performed, and an evaluation of "NO" indicates that dimensional adjustment could not be performed. As can be understood from Table 1, executing the present invention enables resist patterns having dimensions that differ by a desired percentage from the dimensions of a pattern of a mold under standard conditions to be formed.

TABLE 1

[Field of Industrial Applicability]

The nanoimprinting method and the nanoimprinting apparatus of the present invention may be utilized to produce patterned media, which are next generation hard disks, or to produce semiconductor devices .

Claims

1. A nanoimprinting method, characterized by:

placing the assembly within a pressure vessel and curing the resist while the pressure P within the pressure vessel and/or the temperature T of the assembly are controlled to satisfy Formula 1 below when the percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions is designated as ΔΌ₃η, the standard pressure is designated as P_st, the standard temperature is designated as T_st, the Young's modulus of the mold is designated as E_m, the coefficient of thermal expansion of the mold is designated as a_m, the Young' s modulus of the substrate to be processed is designated as E_if and the coefficient of thermal expansion of the substrate to be processed is designated as oij. ; and separating the mold from the resist thereafter.

· (P-P_st ) + (a_m-ai ) · ( T-T_st) (1)

2. A nanoimprinting method as defined in Claim 1, characterized by:

control by pressure being prioritized in cases that the pressure P within the pressure chamber is within a range from OMPa to 5MPa.

3. A nanoimprinting method as defined in either one of Claim 1 and Claim 2, characterized by: the pressure within the pressure vessel being returned to atmospheric pressure after the mold is separated from the resist.

4. A nanoimprinting method as defined in any one of Claims 1 through 3, characterized by:

the temperature of the assembly being returned to ambient temperature after the mold is separated from the resist.

5. A nanoimprinting method as defined in any one of Claims 1 through 4, characterized by:

placement of the assembly being performed by supporting the assembly with a support member only at a portion of the assembly other than a portion corresponding to the pattern of protrusions and recesses.

6. A nanoimprinting method as defined in Claim 5, characterized by:

the support member being of an annular shape.

7. A nanoimprinting method as defined in Claim 5, characterized by:

the support member being constituted by three or more protrusions .

8. A nanoimprinting apparatus to be utilized to execute a nanoimprinting method as defined in any one of Claims 1 through 7, characterized by comprising:

a pressure vessel for housing an assembly constituted by a mold having a fine pattern of protrusions and recesses with predetermined standard dimensions at a predetermined standard pressure and a predetermined standard temperature, a substrate to be processed having a resist coating surface, and resist, formed by causing the pattern of protrusions and recesses to contact the resist, which is coated on the resist coating surface; and

a control means for controlling the pressure P within the pressure vessel and/or the temperature T of the assembly to satisfy Formula 2 below when the percentage of the difference in the dimensions of a resist pattern with respect to the standard dimensions is designated as AD_an, the standardpressure is designated as P_st, the standard temperature is designated as T_st, the Young' s modulus of the mold is designated as E_m, the coefficient of thermal expansion of the mold is designated as cx_m, the Young' s modulus of the substrate to be processed is designated as E_ir and the coefficient of thermal expansion of the substrate to be processed is designated

^' Δ¾ιι= (1/Ei-l/EJ · (P-Pat ) + (<¾,-<¾ ) · ( T-T_st) (2)

9. A nanoimprinting apparatus as defined in Claim 8, characterized by:

the control means prioritizing control by pressure in cases that the pressure P within the pressure chamber is within a range from OMPa to 5MPa.

10. A nanoimprinting apparatus as defined in either one of Claim 8 and Claim 9, further comprising:

a support member for supporting the assembly provided within the pressure vessel; and characterized by:

the assembly being supported by the support member only at a portion of the assembly other than a portion corresponding to the pattern of protrusions and recesses.

11. A nanoimprinting apparatus as defined in Claim 10, characterized by:

the support member being of an annular shape.

12. A nanoimprinting apparatus as defined in Claim 10, characterized by:

the support member being constituted by three or more prot usions .

13. A method for producing patterned substrates, characterized by:

forming a resist film, on which a pattern of protrusions and recesses has been transferred, on a substrate to be transferred by the nanoimprinting method defined in any one of Claims 1 through 7 ; and