WO2013041214A3 - Procédé de dépôt continu et/ou séquentiel d'une couche diélectrique issue de la phase gazeuse sur un substrat - Google Patents

Procédé de dépôt continu et/ou séquentiel d'une couche diélectrique issue de la phase gazeuse sur un substrat Download PDF

Info

Publication number
WO2013041214A3
WO2013041214A3 PCT/EP2012/003898 EP2012003898W WO2013041214A3 WO 2013041214 A3 WO2013041214 A3 WO 2013041214A3 EP 2012003898 W EP2012003898 W EP 2012003898W WO 2013041214 A3 WO2013041214 A3 WO 2013041214A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
continual
dielectric layer
gas phase
microwave plasma
Prior art date
Application number
PCT/EP2012/003898
Other languages
German (de)
English (en)
Other versions
WO2013041214A2 (fr
Inventor
Alexander Gschwandtner
Original Assignee
Hq-Dielectrics Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hq-Dielectrics Gmbh filed Critical Hq-Dielectrics Gmbh
Publication of WO2013041214A2 publication Critical patent/WO2013041214A2/fr
Publication of WO2013041214A3 publication Critical patent/WO2013041214A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un procédé de dépôt continu et/ou séquentiel d'une couche diélectrique issue de la phase gazeuse sur un substrat. Selon ledit procédé, un plasma micro-ondes est produit au moyen d'au moins une électrode micro-ondes, le substrat est placé dans une zone située en-dehors du plasma micro-ondes, dans laquelle une concentration en électrons produite par le plasma micro-ondes est comprise entre 2 et 9 X 1010/cm3, et un gaz précurseur formant la couche diélectrique est guidé sur la face du substrat orientée vers le plasma micro-ondes. L'invention concerne également un procédé de dépôt continu et/ou séquentiel d'une couche de diamant nanocristalline issue de la phase gazeuse sur un substrat. Selon ledit procédé, un plasma micro-ondes est produit au moyen d'au moins une électrode micro-ondes, le substrat est placé dans une zone située dans le plasma, de telle manière que la concentration en électrons à la surface du substrat est comprise entre 10 et 30 X 1010/cm3, et un gaz précurseur contenant du carbone est guidé sur la face du substrat orientée vers le plasma micro-ondes.
PCT/EP2012/003898 2011-09-19 2012-09-18 Procédé de dépôt continu et/ou séquentiel d'une couche diélectrique issue de la phase gazeuse sur un substrat WO2013041214A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011113751.7 2011-09-19
DE102011113751.7A DE102011113751B4 (de) 2011-09-19 2011-09-19 Verfahren zum stetigen oder sequentiellen abscheiden einer dielektrischen schicht aus der gasphase auf einem substrat

Publications (2)

Publication Number Publication Date
WO2013041214A2 WO2013041214A2 (fr) 2013-03-28
WO2013041214A3 true WO2013041214A3 (fr) 2013-05-23

Family

ID=47044938

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/003898 WO2013041214A2 (fr) 2011-09-19 2012-09-18 Procédé de dépôt continu et/ou séquentiel d'une couche diélectrique issue de la phase gazeuse sur un substrat

Country Status (2)

Country Link
DE (1) DE102011113751B4 (fr)
WO (1) WO2013041214A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9758728B2 (en) 2012-06-08 2017-09-12 Battelle Memorial Institute Combined hydrothermal liquefaction and catalytic hydrothermal gasification system and process for conversion of biomass feedstocks
US11244822B2 (en) * 2015-10-20 2022-02-08 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for manufacturing a thin film and a method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0880164A1 (fr) * 1997-05-22 1998-11-25 Canon Kabushiki Kaisha Dispositif de traitement par plasma, équipé d'un applicateur de microondes avec guide d'ondes annulaire, et procédé de traitement
US20100216300A1 (en) * 2007-08-31 2010-08-26 Tokyo Electron Limited Semiconductor device manufacturing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0225577A (ja) * 1988-07-15 1990-01-29 Mitsubishi Electric Corp 薄膜形成装置
JPH04337076A (ja) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk 高圧力下でのプラズマ及びラジカルｃｖｄ法による高速成膜方法
JP3337266B2 (ja) * 1993-04-15 2002-10-21 三菱重工業株式会社 電子サイクロトロン共鳴プラズマの科学蒸着装置
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
DE10350752A1 (de) * 2003-10-30 2005-06-09 Infineon Technologies Ag Verfahren zum Ausbilden eines Dielektrikums auf einer kupferhaltigen Metallisierung und Kondensatoranordnung
DE102008036766B4 (de) 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US20100078320A1 (en) * 2008-09-26 2010-04-01 Applied Materials, Inc. Microwave plasma containment shield shaping
DE102011100024A1 (de) 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Verfahren zum ausbilden einer schicht auf einem substrat

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0880164A1 (fr) * 1997-05-22 1998-11-25 Canon Kabushiki Kaisha Dispositif de traitement par plasma, équipé d'un applicateur de microondes avec guide d'ondes annulaire, et procédé de traitement
US20100216300A1 (en) * 2007-08-31 2010-08-26 Tokyo Electron Limited Semiconductor device manufacturing method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BOUMERZOUG M ET AL: "In-situ monitoring of electron cyclotron resonance plasma chemical vapour deposition of hydrogenated silicon nitride films", SURFACE AND COATINGS TECHNOLOGY, ELSEVIER, AMSTERDAM, NL, vol. 59, no. 1-3, 1 October 1993 (1993-10-01), pages 77 - 81, XP025823758, ISSN: 0257-8972, [retrieved on 19931001], DOI: 10.1016/0257-8972(93)90057-U *
POPOV O A ET AL: "ELECTRON CYCLOTRON RESONANCE PLASMA SOURCE FOR METALORGANIC CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE FILMS", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART A, AVS /AIP, MELVILLE, NY., US, vol. 12, no. 2, 1 March 1994 (1994-03-01), pages 300 - 307, XP000442713, ISSN: 0734-2101, DOI: 10.1116/1.578872 *

Also Published As

Publication number Publication date
DE102011113751A1 (de) 2013-03-21
DE102011113751B4 (de) 2016-09-01
WO2013041214A2 (fr) 2013-03-28

Similar Documents

Publication Publication Date Title
WO2013019565A3 (fr) Sources de plasma inductives pour le traitement de plaquettes et le nettoyage de chambre
WO2012087737A3 (fr) Traitement au plasma de densité variable de substrats semi-conducteurs
WO2019036041A3 (fr) Dépôt géométriquement sélectif d'un film diélectrique
TW201614727A (en) Method of depositing insulation layer on deep trench having high aspect ratio
WO2012170150A3 (fr) Dépôt sélectif de films polymères sur du silicium nu au lieu d'une surface d'oxyde
MY181527A (en) Superhydrophobic compositions and coating process for the internal surface of tubular structures
WO2012112584A3 (fr) Dépôt d'une couche atomique au moyen de radicaux d'un mélange de gaz
WO2010095901A3 (fr) Procédé de formation de couche mince au moyen de radicaux générés par plasma
WO2011126748A3 (fr) Dépôt de films conformes en nitrure de bore
WO2012118955A3 (fr) Dispositif et procédé de dépôt par couche atomique
WO2012170099A3 (fr) Synthèse directe de graphène à motif par dépôt
WO2012150763A3 (fr) Procédé de production de graphène de haute qualité à l'aide d'un procédé de dépôt chimique en phase vapeur à traitement thermique continu
SG165295A1 (en) Electron beam vapor deposition apparatus for depositing multi-layer coating
WO2013032786A3 (fr) Dépôt d'un film diélectrique épousant les formes activé par un plasma
WO2011126612A3 (fr) Masque résistant en carbone amorphe dopé à l'azote
WO2011137059A3 (fr) Procédé de dépôt de carbone amorphe pour une défectivité d'empilement améliorée
WO2013012536A3 (fr) Traitement et dépôt en surface pour réduire le dégazage
WO2012092020A3 (fr) Dépôt en couche mince à l'aide d'un plasma à micro-ondes
WO2012040317A3 (fr) Dépôt de films conformes assisté par plasma
WO2012150278A9 (fr) Nano et micro-structures de carbone hierarchiques
WO2013036667A3 (fr) Couches de silicium-carbone-azote douées d'écoulement pour le traitement des semi-conducteurs
WO2012118947A3 (fr) Appareil et procédé de dépôt de couches atomiques
JP2013229608A5 (fr)
WO2011139775A3 (fr) Modèle de couvercle de chambre de traitement comprenant une source de plasma incorporée pour espèces à courte durée de vie
WO2009014394A3 (fr) Procédé de dépôt d'un mince film de céramique par pulvérisation au moyen d'une cible non conductrice

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12774920

Country of ref document: EP

Kind code of ref document: A2

122 Ep: pct application non-entry in european phase

Ref document number: 12774920

Country of ref document: EP

Kind code of ref document: A2