WO2013034411A3 - Vacuum coating apparatus - Google Patents

Vacuum coating apparatus Download PDF

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Publication number
WO2013034411A3
WO2013034411A3 PCT/EP2012/065908 EP2012065908W WO2013034411A3 WO 2013034411 A3 WO2013034411 A3 WO 2013034411A3 EP 2012065908 W EP2012065908 W EP 2012065908W WO 2013034411 A3 WO2013034411 A3 WO 2013034411A3
Authority
WO
WIPO (PCT)
Prior art keywords
coating apparatus
vacuum coating
electrode
substrate
counter
Prior art date
Application number
PCT/EP2012/065908
Other languages
French (fr)
Other versions
WO2013034411A2 (en
Inventor
Andreas Geiss
Guido Mahnke
Harald Rost
Michael Klosch-Trageser
Original Assignee
Schmid Vacuum Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schmid Vacuum Technology Gmbh filed Critical Schmid Vacuum Technology Gmbh
Publication of WO2013034411A2 publication Critical patent/WO2013034411A2/en
Publication of WO2013034411A3 publication Critical patent/WO2013034411A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A vacuum coating apparatus is disclosed having an evacuable coating chamber (12), wherein there is provided a substrate carrier (28) for holding a substrate (30) to be coated, having an electrode (24) above the substrate (30) to be coated, and having a counter- electrode (32) wherein the substrate carrier (28) is held on a plate (32) which preferably consists of graphite and which is connected as the counter-electrode.
PCT/EP2012/065908 2011-09-05 2012-08-14 Vacuum coating apparatus WO2013034411A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011113293.0 2011-09-05
DE102011113293A DE102011113293A1 (en) 2011-09-05 2011-09-05 Vacuum coater

Publications (2)

Publication Number Publication Date
WO2013034411A2 WO2013034411A2 (en) 2013-03-14
WO2013034411A3 true WO2013034411A3 (en) 2013-09-12

Family

ID=46650561

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/065908 WO2013034411A2 (en) 2011-09-05 2012-08-14 Vacuum coating apparatus

Country Status (3)

Country Link
DE (1) DE102011113293A1 (en)
TW (1) TW201327618A (en)
WO (1) WO2013034411A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215562A (en) * 2013-04-25 2013-07-24 光垒光电科技（上海）有限公司 Reaction cavity
TWI646868B (en) 2015-11-05 2019-01-01 德商比埃勒阿爾策瑙有限公司 Apparatus and process for vacuum coating
DE102020124022A1 (en) 2020-09-15 2022-03-17 centrotherm international AG Workpiece carrier, system and operating procedure for PECVD

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
EP0824266A2 (en) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Substrate processing apparatus
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2007101207A2 (en) * 2006-02-27 2007-09-07 Anaconda Semi Lp Process chambers for substrate vacuum processing tool
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
US20110039414A1 (en) * 2008-03-19 2011-02-17 Sanyo Electric Co.,Ltd. Plasma processing method and plasma processing apparatus
WO2012054200A2 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6001183A (en) * 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6626186B1 (en) 1998-04-20 2003-09-30 Tokyo Electron Limited Method for stabilizing the internal surface of a PECVD process chamber
TW511158B (en) * 2000-08-11 2002-11-21 Alps Electric Co Ltd Plasma processing apparatus and system, performance validation system thereof
US7279049B2 (en) * 2004-02-05 2007-10-09 Applied Materials, Inc. Apparatus for reducing entrapment of foreign matter along a moveable shaft of a substrate support
KR20070089197A (en) * 2004-11-22 2007-08-30 어플라이드 머티어리얼스, 인코포레이티드 Substrate processing apparatus using a batch processing chamber
US7740705B2 (en) * 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0272140A2 (en) * 1986-12-19 1988-06-22 Applied Materials, Inc. TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films.
US5494494A (en) * 1992-06-24 1996-02-27 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing substrates
EP0824266A2 (en) * 1996-08-05 1998-02-18 Kokusai Electric Co., Ltd. Substrate processing apparatus
US6189482B1 (en) * 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
US20040129211A1 (en) * 2003-01-07 2004-07-08 Applied Materials, Inc. Tunable gas distribution plate assembly
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2007101207A2 (en) * 2006-02-27 2007-09-07 Anaconda Semi Lp Process chambers for substrate vacuum processing tool
US20070264443A1 (en) * 2006-05-09 2007-11-15 Applied Materials, Inc. Apparatus and method for avoidance of parasitic plasma in plasma source gas supply conduits
US20110039414A1 (en) * 2008-03-19 2011-02-17 Sanyo Electric Co.,Ltd. Plasma processing method and plasma processing apparatus
WO2012054200A2 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design

Also Published As

Publication number Publication date
TW201327618A (en) 2013-07-01
WO2013034411A2 (en) 2013-03-14
DE102011113293A1 (en) 2013-03-07

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