WO2013031090A1 - Silicon wafer polishing method and polishing device - Google Patents

Silicon wafer polishing method and polishing device Download PDF

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Publication number
WO2013031090A1
WO2013031090A1 PCT/JP2012/004902 JP2012004902W WO2013031090A1 WO 2013031090 A1 WO2013031090 A1 WO 2013031090A1 JP 2012004902 W JP2012004902 W JP 2012004902W WO 2013031090 A1 WO2013031090 A1 WO 2013031090A1
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Prior art keywords
polishing
cloth
abrasive
silicon wafer
dressing
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PCT/JP2012/004902
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French (fr)
Japanese (ja)
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茂 大葉
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信越半導体株式会社
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Publication of WO2013031090A1 publication Critical patent/WO2013031090A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Definitions

  • the present invention relates to a polishing method and a polishing apparatus for polishing a silicon wafer by sliding it against a polishing cloth while supplying an abrasive.
  • a silicon wafer manufacturing method includes a slicing step of slicing a silicon ingot to obtain a thin disk-shaped wafer, and a chamfering process for chamfering the outer periphery of the wafer obtained by the slicing step to prevent cracking and chipping.
  • a process a lapping process for flattening the chamfered wafer, an etching process for removing processing distortion remaining on the chamfered and lapped wafer, and a polishing process for polishing the surface of the etched wafer. It has a cleaning step of cleaning the polished wafer and removing the abrasive and foreign matter adhering to the wafer.
  • the above shows only the main processes, and other processes such as a heat treatment process and a surface grinding process are added, and the order of the processes is changed. Moreover, the same process may be implemented in multiple times. Thereafter, an inspection or the like is performed, and the device is sent to a device manufacturing process. An insulating film or a metal wiring is formed on the surface of the silicon wafer, and a device such as a memory is manufactured.
  • the above polishing step is a step of mirror-finishing the surface by bringing the silicon wafer into sliding contact with the polishing cloth while supplying the abrasive.
  • polishing is usually performed through a plurality of stages from rough polishing to final polishing.
  • primary polishing is performed by double-side polishing, and then scratches and the like generated by the primary polishing are removed, and secondary polishing and further polishing are performed by single-side polishing in order to improve the surface roughness.
  • double-sided polishing the wafer is held in the carrier holding hole, the carrier is placed between the upper and lower surface plates to which the polishing cloth is affixed, and the upper and lower surface plates are connected to each other while supplying the abrasive to the polishing cloth. By rotating in the opposite direction, both surfaces of the wafer are brought into sliding contact with the polishing cloth and polished simultaneously (see, for example, Patent Document 1).
  • double-side polishing a method is often employed in which a plurality of wafers are simultaneously polished and repeated in a batch manner.
  • a silicon wafer is held by a polishing head, an abrasive is supplied onto a polishing cloth affixed to a surface plate, and the surface of the silicon wafer is slid onto the polishing cloth by rotating the surface plate and the polishing head. It polishes by making it contact (for example, refer patent document 2).
  • the wafer thickness is measured directly during polishing, and the finish thickness is set so that polishing is terminated when the target thickness is reached.
  • Monitoring system to control has been developed and put into practical use.
  • instead of directly measuring the thickness of the wafer there is also a method of controlling the thickness of the wafer by polishing chips simultaneously with the wafer and monitoring a chip whose thickness changes in proportion to the thickness of the wafer. At this time, an optical interference type or eddy current type measuring device is used for measuring the thickness of the wafer.
  • the former is generally expensive, and the latter is not suitable for a high-purity environment, and there is a problem that automation of a monitoring system using the above-described chip becomes complicated.
  • the polishing rate is constant in each batch, and the difference between the thickness before polishing and the target finished thickness, that is, the polishing allowance and the constant polishing rate is determined from the polishing time. Is calculated, and the target polishing allowance is obtained by polishing with this polishing time.
  • the polishing agent when adjusting the polishing agent to stabilize the polishing rate so that the polishing rate is constant between batches, set the polishing time calculated from the target polishing allowance and the constant polishing rate.
  • the target finished thickness should be obtained.
  • the polishing cloth is clogged or clogged and the polishing power is reduced.
  • dressing of the polishing cloth needs to be performed periodically. Accordingly, a difference in polishing rate due to a change in the state of the polishing cloth occurs between the batches, and in particular, a difference in polishing rate between the batches before and after dressing increases. For this reason, the deviation from the target polishing allowance increases between the batches, resulting in a variation in the finished thickness.
  • the present invention has been made in view of the above-described problems, and suppresses variations in polishing allowance due to a change in polishing rate caused by a change in the dressing state of the polishing cloth, and enables a highly accurate control of the finished thickness of the silicon wafer.
  • An object is to provide a polishing method and a polishing apparatus.
  • the polishing time is set so as to obtain a predetermined polishing allowance, and the abrasive stored in the tank is supplied to the polishing cloth affixed on the surface plate.
  • the silicon wafer is slid in contact with the polishing cloth and polished for the set polishing time, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank.
  • Method for polishing a silicon wafer, comprising a step of setting the polishing time is provided based on the polishing rate of reduction.
  • Such a polishing method can reliably suppress variations in polishing allowance caused by changes in the dressing state of the polishing cloth, and can polish the wafer to a target thickness by controlling the finished thickness with high accuracy.
  • the polishing rate in the step of recording the polishing rate in a database, it is possible to record the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch. If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the polishing rate is recorded in the database in advance. Save time.
  • a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer so as not to change the composition of the abrasive. In this way, variation due to the abrasive between batches is reduced and the polishing rate is more stable, so that the finished thickness can be controlled with higher accuracy.
  • the surface plate to which the polishing cloth is attached, the holding means for holding the silicon wafer, and the abrasive stored in the tank are supplied to the polishing cloth, and the supplied abrasive is A circulation system for collecting and circulating in the tank and a control means for setting a polishing time so as to obtain a predetermined polishing allowance while supplying the abrasive to the polishing cloth in the circulation system
  • the silicon wafer is brought into sliding contact with the polishing cloth and polished for the polishing time set by the control means, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank.
  • the polishing apparatus further comprises recording means for previously recording in a database a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth.
  • the stage is based on a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth recorded in the recording means when setting the polishing time to be the predetermined polishing allowance.
  • a polishing apparatus is provided that sets the polishing time.
  • the recording means can be configured to record the polishing rate for each batch after dressing the polishing cloth, or for each predetermined batch.
  • the polishing time can be set more accurately. If the polishing rate is recorded for each predetermined batch, the polishing rate is recorded in the database in advance. It becomes an apparatus that can reduce the time of the preparation process.
  • a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer to adjust the composition of the abrasive so as not to change. If it is such, since the dispersion
  • a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth is recorded in a database in advance, and the recorded polishing rate is Since the polishing time is set based on this, the variation in the polishing allowance caused by the change in the dressing state of the polishing pad can be surely suppressed, and the finished thickness can be controlled with high accuracy to polish the wafer to the target thickness.
  • a method of controlling to a target finished thickness by setting a polishing time calculated from a target polishing allowance and a constant polishing rate is used.
  • a polishing agent is adjusted to perform polishing with a highly stable polishing rate between batches, a target finished thickness can be obtained with relatively high accuracy.
  • the polishing rate changes depending on the dressing state of the polishing cloth, the deviation from the target polishing margin increases between batches, and the finished thickness varies.
  • the deviation of the finished thickness is 0.5 ⁇ m or less, further 0.2 ⁇ m or less.
  • the present inventor has intensively studied to solve such problems.
  • polishing with a highly stable polishing rate between batches by adjusting the polishing agent, etc. it has been found that there is a certain pattern in the change in polishing rate according to the dressing state of the polishing cloth described above. It was. The inventors have conceived that the polishing rate can be predicted with high accuracy by taking the change pattern into consideration, and the present invention has been completed.
  • the polishing apparatus 1 includes an upper surface plate 2 and a lower surface plate 3 provided opposite to each other in the vertical direction.
  • the cloth 4 is affixed.
  • a sun gear 9 is provided at the center between the upper and lower surface plates 2 and 3, and an internal gear 10 is provided at the periphery.
  • the carrier 5 is provided with a holding hole 6 for holding the silicon wafer W, and a plurality of carriers 5 are sandwiched between the upper and lower surface plates 2 and 3.
  • the teeth of the sun gear 9 and the internal gear 10 are engaged with the outer peripheral teeth of the carrier 5, and the upper and lower surface plates 2 and 3 are respectively rotated at a predetermined rotational speed by the upper rotating shaft 7 and the lower rotating shaft 8.
  • each carrier 5 revolves around the sun gear 9 while rotating.
  • the silicon wafer W held in the holding hole 6 of the carrier 5 is brought into sliding contact with the upper and lower polishing cloths 4 and both surfaces thereof are polished simultaneously.
  • the abrasive 13 in the tank 12 is supplied from the nozzle 11 to the polishing pad 4.
  • the supplied polishing agent 13 flows down to the surface plate receiver 18 and is collected in a pipe (not shown), except for a part that cannot be recovered due to, for example, a part scattered during polishing or exhausted as mist. These are collected in the tank 12 and used for subsequent polishing.
  • the abrasive 13 circulates between the tank 12 and the polishing cloth 4 (and the upper and lower surface plates 2 and 3) by the circulation system 14.
  • the polishing apparatus 1 has a control means 15 for setting a polishing time so as to obtain a predetermined polishing allowance before polishing.
  • This control means 15 is connected to the circulation system 14 and the upper and lower rotary shafts 7 and 8, and controls the start and end of polishing so that the polishing is performed at the set polishing time.
  • a recording means 17 is provided for previously recording in the database the polishing rate that changes as the number of batches after dressing the polishing cloth 4 increases.
  • This recording means 17 is connected to the control means 15 so that the polishing speed recorded in the database from the control means 15 can be referred to.
  • the control means 15 sets the polishing time to be a predetermined polishing allowance, the polishing time is based on the polishing speed that changes with the increase in the number of batches after dressing the polishing cloth 4 recorded in the database.
  • the recording means and the control means can be constituted by a personal computer or the like.
  • the silicon wafer W is brought into sliding contact with the polishing cloth 4 while being supplied with the polishing agent 13 to the polishing cloth 4 by the circulation system 14 and is polished for the polishing time set by the control means 15.
  • the polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated.
  • the recording means 17 records the polishing rate of each batch after dressing the polishing cloth 4 until the next dressing is performed, it occurs when the dressing state of the polishing cloth changes. Changes in the polishing rate can be reflected more accurately in the polishing time, and variations in polishing allowance can be more reliably suppressed.
  • [D n B m ] in the following formula represents the polishing rate in the m-th batch after the n-th dressing.
  • the average value of the polishing rate for the first batch immediately after the dressing recorded in the database is used as shown in the following formula 1.
  • a predicted change amount from the polishing rate in the polishing performed immediately before is obtained by referring to a database, and a polishing rate to which the predicted change amount is applied is used.
  • the polishing rate is obtained using the predicted change amount obtained from the average difference.
  • the polishing rate is obtained using the predicted change amount obtained from the average of the ratios.
  • the recording means does not record the polishing rate of each batch after dressing the polishing cloth, but performs polishing for each predetermined batch until the next dressing is performed after dressing the polishing cloth.
  • the speed may be recorded. For example, in the case of dressing every 10 batches, the polishing speed of any one of the first batch, 3-5 batch, 6-7 batch, 8-10 batch after dressing is stored in the database. Record. Even when only the polishing rate for each predetermined batch is recorded in this way, the polishing rate is recorded in advance in the database while reflecting the change in the polishing rate in the polishing time with sufficient accuracy and suppressing the variation in the polishing allowance. Process time can be reduced.
  • the polishing apparatus 1 adds a new abrasive, alkali, and water to the tank 12 at least before, during, or after polishing the silicon wafer W so that the composition of the abrasive 13 does not change. It is preferable to have a mechanism 16 for adjustment. By adjusting so that the composition of the abrasive does not change during polishing using this mechanism, the variation caused by the change of the abrasive between batches is suppressed, the polishing speed is more stable, and the dressing of the polishing cloth is performed. Since the accuracy of the constant pattern of the change in the polishing rate according to the state is also increased, the finished thickness can be controlled with higher accuracy as a result.
  • FIG. 3 shows how the polishing rate changes with respect to the change in the dressing state of the polishing cloth.
  • FIG. 3 shows the change in the polishing rate in each batch when dressing is performed every 5 batches or 10 batches.
  • the polishing rate is shown as a relative value when the polishing rate in the first batch is 100%.
  • the polishing rate after dressing changes with a relative periodicity.
  • the circled points indicate the first batch immediately after dressing, and it can be seen that the polishing speed is almost the same.
  • the polishing apparatus 21 includes a surface plate 23 to which a polishing cloth 24 is attached, a nozzle 25, and a polishing head 22.
  • the silicon wafer W is held by the polishing head 22, the abrasive 13 in the tank 12 is supplied onto the polishing cloth 24 through the nozzle 25, and the surface plate 23 and the polishing head 22 are respectively connected. Polishing is performed by rotating and bringing the surface of the workpiece W into sliding contact with the polishing pad 24.
  • the polishing apparatus 21 like the above-described polishing apparatus 1 that performs double-side polishing, a circulation system 14 that collects and circulates the supplied polishing agent 13, and a control for setting a polishing time so as to have a predetermined polishing allowance.
  • the control means 15 is similar to the polishing apparatus 1.
  • the polishing time is set based on the polishing rate that changes with the increase in the number of batches after dressing the polishing cloth 24 recorded in the database.
  • the supplied abrasive 13, except for a part of the polishing apparatus 1 flows down to the surface plate receiver 18 and is collected in a pipe (not shown), and then collected in the tank 12, and thereafter Used for polishing.
  • the control device 15 sets the polishing time so that polishing is performed at a predetermined polishing allowance based on the polishing rate that changes as the number of batches increases after dressing the polishing cloth recorded in the database.
  • the polishing rate used when setting the polishing time can be determined by the method described in the description of the polishing apparatus 1 of the present invention described above.
  • the silicon wafer W is slidably brought into contact with the polishing cloth 4 while the polishing agent 13 stored in the tank 12 is supplied to the polishing cloth 4 attached on the surface plates 2 and 3.
  • the controller 15 controls the polishing so that the polishing is completed within the set polishing time.
  • the polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated. While this polishing is repeated, the polishing cloth 4 is dressed every certain number of batches.
  • polishing rate can be predicted with higher accuracy.
  • the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch can be recorded. If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the time for the step of recording the polishing rate in the database in advance can be set. Can be reduced.
  • the composition of the abrasive is not changed by adding a new abrasive, alkali, and water into the tank at least before, during, or after the polishing of the silicon wafer. .
  • a new abrasive, alkali, and water into the tank at least before, during, or after the polishing of the silicon wafer.
  • Example 1 Using a polishing apparatus of the present invention as shown in FIG. 1, polishing of a silicon wafer having a diameter of 300 mm was repeated batchwise according to the method for polishing a silicon wafer of the present invention.
  • the number of polished sheets per batch was five.
  • the polishing time of the etched silicon wafer is set so that the thickness before polishing is about 793 ⁇ 2 ⁇ m to 777 ⁇ m, that is, the polishing margin is about 16 ⁇ m, and the polishing pressure is 200 g / cm 2 . Polished.
  • the polishing rate of each batch after dressing the polishing cloth was recorded. A polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing.
  • FIG. 4 shows the results of evaluating the deviation from the target finished thickness of the polished silicon wafer.
  • the deviation from the target thickness was improved as compared with the result of the comparative example described later, and a very good result of 0.5 ⁇ m or less was obtained.
  • the target deviation of 0.2 ⁇ m or less was achieved in 80% or more of the batches.
  • Example 2 In the step of recording the polishing rate in the database, the silicon wafer was polished and evaluated in the same manner as in Example 1 except that the polishing rate for each predetermined batch after dressing the polishing cloth was recorded. did.
  • the polishing rates in the first, third, sixth and eighth batches after dressing were recorded in advance in a database.
  • a polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing. The result is shown in FIG. As shown in FIG. 5, the deviation from the target thickness was slightly larger than the result of Example 1, but it was found that the result was improved compared to the result of Comparative Example described later. In Example 2, the target deviation of 0.2 ⁇ m or less could be achieved in about 70% of the batch.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

The present invention is a silicon wafer polishing method for setting a polishing time such that a predetermined polishing margin is obtained, polishing a silicon wafer in sliding contact with an abrasive cloth for a set polishing time while supplying an abrasive stored in a tank to the abrasive cloth, and repeating the polishing of the silicon wafers in a batch processing manner while collecting the supplied abrasive into the tank and circulating the abrasive therein, the silicon wafer polishing method comprising a step of previously recording in a database the polishing rate that changes with an increase in the number of batches after the abrasive cloth is dressed, and a step of, when the polishing time is set such that the predetermined polishing margin is obtained, setting the polishing time on the basis of the polishing rate that changes with an increase in the number of batches after the abrasive cloth is dressed and that has been recorded in the database. Consequently, a silicon wafer polishing method and polishing device which are capable of suppressing variations in polishing margin due to a change in polishing rate caused by a change in the dressed state of the abrasive cloth and controlling the finished thickness with high precision are provided.

Description

シリコンウェーハの研磨方法及び研磨装置Silicon wafer polishing method and polishing apparatus
　本発明は、研磨剤を供給しながらシリコンウェーハを研磨布に摺接させて研磨する研磨方法及び研磨装置に関する。 The present invention relates to a polishing method and a polishing apparatus for polishing a silicon wafer by sliding it against a polishing cloth while supplying an abrasive.
　一般にシリコンウェーハの製造方法は、シリコンインゴットをスライスして薄円板状のウェーハを得るスライス工程と、該スライス工程によって得られたウェーハの割れ、欠けを防止するためにその外周部を面取りする面取り工程と、面取りされたウェーハを平坦化するラッピング工程と、面取り及びラッピングされたウェーハに残留する加工歪みを除去するエッチング工程と、エッチングされたウェーハの表面を鏡面化する研磨（ポリッシング）工程と、研磨されたウェーハを洗浄して、これに付着した研磨剤や異物を除去する洗浄工程を有している。 In general, a silicon wafer manufacturing method includes a slicing step of slicing a silicon ingot to obtain a thin disk-shaped wafer, and a chamfering process for chamfering the outer periphery of the wafer obtained by the slicing step to prevent cracking and chipping. A process, a lapping process for flattening the chamfered wafer, an etching process for removing processing distortion remaining on the chamfered and lapped wafer, and a polishing process for polishing the surface of the etched wafer. It has a cleaning step of cleaning the polished wafer and removing the abrasive and foreign matter adhering to the wafer.
　以上は、主な工程のみを示したもので、他に熱処理工程や平面研削工程等が加わったり、工程の順番が入れ換えられたりする。また、同一の工程を複数回実施することもある。その後、検査等を行い、デバイス製造工程に送られ、シリコンウェーハの表面上に絶縁膜や金属配線を形成し、メモリー等のデバイスが製造される。 The above shows only the main processes, and other processes such as a heat treatment process and a surface grinding process are added, and the order of the processes is changed. Moreover, the same process may be implemented in multiple times. Thereafter, an inspection or the like is performed, and the device is sent to a device manufacturing process. An insulating film or a metal wiring is formed on the surface of the silicon wafer, and a device such as a memory is manufactured.
　上記研磨工程は、研磨剤を供給しながらシリコンウェーハを研磨布に摺接させることによって表面を鏡面化する工程である。シリコンウェーハの研磨工程では、通常、粗研磨から仕上げ研磨へと複数の段階を経て研磨が行われる。一般に、両面研磨により１次研磨を行い、次いで１次研磨で発生したキズなど除去し、表面粗さを改善するため、片面研磨により２次研磨、さらに仕上げ研磨が行われる。 The above polishing step is a step of mirror-finishing the surface by bringing the silicon wafer into sliding contact with the polishing cloth while supplying the abrasive. In a silicon wafer polishing process, polishing is usually performed through a plurality of stages from rough polishing to final polishing. In general, primary polishing is performed by double-side polishing, and then scratches and the like generated by the primary polishing are removed, and secondary polishing and further polishing are performed by single-side polishing in order to improve the surface roughness.
　両面研磨は、キャリアの保持孔にウェーハを保持し、キャリアを研磨布が貼り付けされた上下定盤の間に挟んで配置し、研磨布に研磨剤を供給しながら、上下定盤をお互いに反対方向に回転させることによって、ウェーハの両面を研磨布に摺接させて同時に研磨する（例えば、特許文献１参照）。また、両面研磨においては、複数のウェーハを一度に同時に研磨し、これをバッチ式に繰り返す方式が採用されることが多い。片面研磨は、研磨ヘッドでシリコンウェーハを保持し、定盤に貼り付けられた研磨布上に研磨剤を供給するとともに、定盤と研磨ヘッドをそれぞれ回転させてシリコンウェーハの表面を研磨布に摺接させることにより研磨する（例えば、特許文献２参照）。 In double-sided polishing, the wafer is held in the carrier holding hole, the carrier is placed between the upper and lower surface plates to which the polishing cloth is affixed, and the upper and lower surface plates are connected to each other while supplying the abrasive to the polishing cloth. By rotating in the opposite direction, both surfaces of the wafer are brought into sliding contact with the polishing cloth and polished simultaneously (see, for example, Patent Document 1). In double-side polishing, a method is often employed in which a plurality of wafers are simultaneously polished and repeated in a batch manner. In single-sided polishing, a silicon wafer is held by a polishing head, an abrasive is supplied onto a polishing cloth affixed to a surface plate, and the surface of the silicon wafer is slid onto the polishing cloth by rotating the surface plate and the polishing head. It polishes by making it contact (for example, refer patent document 2).
　このようなシリコンウェーハの研磨加工において、目標の仕上がり厚さを得るために、研磨中に直接ウェーハの厚さを測定し、目標の厚さに達したところで研磨を終了させるように仕上がり厚さを制御するモニタリングシステムが開発され、実用化されている。ウェーハの厚さを直接測定する代わりに、ウェーハと同時に研磨することで、ウェーハ厚さに比例してその厚さが変化するチップをモニタリングしてウェーハの厚さを制御する方法もある。この際、ウェーハの厚さの測定には光干渉方式や、渦電流方式の測定装置が用いられる。 In such a silicon wafer polishing process, in order to obtain the target finish thickness, the wafer thickness is measured directly during polishing, and the finish thickness is set so that polishing is terminated when the target thickness is reached. Monitoring system to control has been developed and put into practical use. Instead of directly measuring the thickness of the wafer, there is also a method of controlling the thickness of the wafer by polishing chips simultaneously with the wafer and monitoring a chip whose thickness changes in proportion to the thickness of the wafer. At this time, an optical interference type or eddy current type measuring device is used for measuring the thickness of the wafer.
　しかし、前者は一般に高価であり、後者は高純度な環境には適さなかったり、前述のチップを用いたモニタリングシステムの自動化が複雑となってしまうという問題がある。また、ウェットな研磨環境などのように研磨中に厚さの測定が困難な場合や、研磨装置に厚さのモニタリングシステムが備わっていない場合もある。
　そこで、このようなモニタリングシステムを用いない場合、各バッチで研磨速度が一定であると仮定して、研磨前の厚さと目標の仕上がり厚さの差、すなわち研磨代と一定の研磨速度から研磨時間を算出し、この研磨時間で研磨することで目標の研磨代を得る方法が用いられている。 However, the former is generally expensive, and the latter is not suitable for a high-purity environment, and there is a problem that automation of a monitoring system using the above-described chip becomes complicated. Further, there are cases where it is difficult to measure the thickness during polishing, such as in a wet polishing environment, or the polishing apparatus is not equipped with a thickness monitoring system.
Therefore, when such a monitoring system is not used, it is assumed that the polishing rate is constant in each batch, and the difference between the thickness before polishing and the target finished thickness, that is, the polishing allowance and the constant polishing rate is determined from the polishing time. Is calculated, and the target polishing allowance is obtained by polishing with this polishing time.
特開２０１０－３４４６２号公報JP 2010-34462 A 特開２００８－９３８１１号公報JP 2008-93811 A
　例えば研磨剤を調整するなどして、各バッチ間で研磨速度が一定になるように安定させて研磨する場合、目標の研磨代と一定の研磨速度から算出した研磨時間を設定して研磨することで、目標の仕上がり厚さが得られるはずである。
　ところが、研磨バッチを繰り返していくと、研磨布の目つぶれや目詰まりが進み研磨力が低下するので、これを解消するために研磨布のドレッシングを定期的に行う必要がある。従って、各バッチ間で研磨布の状態の変化による研磨速度の差が生じ、特にドレッシングの前後のバッチ間で研磨速度の差が大きくなる。そのため、目標の研磨代からのずれが各バッチ間で大きくなり、仕上がり厚さにばらつきが発生するという問題が生じている。 For example, when adjusting the polishing agent to stabilize the polishing rate so that the polishing rate is constant between batches, set the polishing time calculated from the target polishing allowance and the constant polishing rate. The target finished thickness should be obtained.
However, as the polishing batch is repeated, the polishing cloth is clogged or clogged and the polishing power is reduced. To eliminate this, dressing of the polishing cloth needs to be performed periodically. Accordingly, a difference in polishing rate due to a change in the state of the polishing cloth occurs between the batches, and in particular, a difference in polishing rate between the batches before and after dressing increases. For this reason, the deviation from the target polishing allowance increases between the batches, resulting in a variation in the finished thickness.
　本発明は前述のような問題に鑑みてなされたもので、研磨布のドレッシング状態の変化によって生じる研磨速度の変化による研磨代のばらつきを抑制し、仕上がり厚さを高精度に制御できるシリコンウェーハの研磨方法及び研磨装置を提供することを目的とする。 The present invention has been made in view of the above-described problems, and suppresses variations in polishing allowance due to a change in polishing rate caused by a change in the dressing state of the polishing cloth, and enables a highly accurate control of the finished thickness of the silicon wafer. An object is to provide a polishing method and a polishing apparatus.
　上記目的を達成するために、本発明によれば、所定の研磨代となるように研磨時間を設定し、タンク内に貯蔵された研磨剤を定盤上に貼り付けられた研磨布に供給しながらシリコンウェーハを前記研磨布に摺接させて前記設定した研磨時間で研磨し、前記供給した研磨剤を前記タンク内に回収して循環させながら前記シリコンウェーハの研磨をバッチ式に繰り返し、一定のバッチ回数毎に前記研磨布をドレッシングするシリコンウェーハの研磨方法において、前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく工程と、前記所定の研磨代となるように前記研磨時間を設定する際に、前記データベースに記録された前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて前記研磨時間を設定する工程とを有することを特徴とするシリコンウェーハの研磨方法が提供される。 In order to achieve the above object, according to the present invention, the polishing time is set so as to obtain a predetermined polishing allowance, and the abrasive stored in the tank is supplied to the polishing cloth affixed on the surface plate. The silicon wafer is slid in contact with the polishing cloth and polished for the set polishing time, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank. In the method for polishing a silicon wafer in which the polishing cloth is dressed every batch number of times, a step of previously recording in the database a polishing rate that changes as the number of batches increases after dressing the polishing cloth, When setting the polishing time to be a polishing allowance, with an increase in the number of batches after dressing the polishing cloth recorded in the database Method for polishing a silicon wafer, comprising a step of setting the polishing time is provided based on the polishing rate of reduction.
　このような研磨方法であれば、研磨布のドレッシング状態の変化によって生じる研磨代のばらつきを確実に抑制でき、仕上がり厚さを高精度に制御してウェーハを目標の厚さに研磨できる。 Such a polishing method can reliably suppress variations in polishing allowance caused by changes in the dressing state of the polishing cloth, and can polish the wafer to a target thickness by controlling the finished thickness with high accuracy.
　このとき、前記研磨速度をデータベースに記録しておく工程において、前記研磨布をドレッシングした後の各バッチ、或いは所定のバッチ毎の前記研磨速度を記録しておくことができる。
　このように各バッチの前記研磨速度を記録しておけば、より正確に研磨時間を設定でき、所定のバッチ毎の前記研磨速度を記録すれば、研磨速度を予めデータベースに記録しておく工程の時間を削減できる。 At this time, in the step of recording the polishing rate in a database, it is possible to record the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch.
If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the polishing rate is recorded in the database in advance. Save time.
　またこのとき、前記シリコンウェーハの研磨前、研磨中、又は研磨後に新研磨剤、アルカリ、及び水を前記タンク内に加えて前記研磨剤の組成が変化しないように調整することが好ましい。
　このようにすれば、各バッチ間で研磨剤が起因のばらつきが減少して研磨速度がより安定するので、仕上がり厚さをより高精度に制御できる。 Further, at this time, it is preferable to add a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer so as not to change the composition of the abrasive.
In this way, variation due to the abrasive between batches is reduced and the polishing rate is more stable, so that the finished thickness can be controlled with higher accuracy.
　また、本発明によれば、研磨布が貼り付けられた定盤と、シリコンウェーハを保持する保持手段と、タンク内に貯蔵された研磨剤を前記研磨布に供給し、該供給した研磨剤を前記タンク内に回収して循環させる循環システムと、所定の研磨代となるように研磨時間を設定するための制御手段とを有し、前記循環システムで前記研磨剤を前記研磨布に供給しながら前記シリコンウェーハを前記研磨布に摺接させて前記制御手段で設定した研磨時間で研磨し、前記供給した研磨剤を前記タンク内に回収して循環させながら前記シリコンウェーハの研磨をバッチ式に繰り返す研磨装置において、さらに、前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく記録手段を有し、前記制御手段は、前記所定の研磨代となるように前記研磨時間を設定する際に、前記記録手段に記録された前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて前記研磨時間を設定するものであることを特徴とする研磨装置が提供される。 Further, according to the present invention, the surface plate to which the polishing cloth is attached, the holding means for holding the silicon wafer, and the abrasive stored in the tank are supplied to the polishing cloth, and the supplied abrasive is A circulation system for collecting and circulating in the tank and a control means for setting a polishing time so as to obtain a predetermined polishing allowance while supplying the abrasive to the polishing cloth in the circulation system The silicon wafer is brought into sliding contact with the polishing cloth and polished for the polishing time set by the control means, and the polishing of the silicon wafer is repeated batchwise while the supplied abrasive is collected and circulated in the tank. The polishing apparatus further comprises recording means for previously recording in a database a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth. The stage is based on a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth recorded in the recording means when setting the polishing time to be the predetermined polishing allowance. A polishing apparatus is provided that sets the polishing time.
　このような研磨装置であれば、研磨布のドレッシング状態の変化によって生じる研磨代のばらつきを確実に抑制でき、仕上がり厚さを高精度に制御してウェーハを目標の厚さに研磨できるものとなる。 With such a polishing apparatus, variation in polishing allowance caused by a change in the dressing state of the polishing cloth can be reliably suppressed, and the wafer can be polished to a target thickness by controlling the finished thickness with high accuracy. .
　このとき、前記記録手段を、前記研磨布をドレッシングした後の各バッチ、或いは所定のバッチ毎の前記研磨速度を記録するものとして構成できる。
　このように各バッチの前記研磨速度を記録するものであれば、より正確に研磨時間を設定でき、所定のバッチ毎の前記研磨速度を記録するものであれば、研磨速度を予めデータベースに記録しておく工程の時間を削減できる装置となる。 At this time, the recording means can be configured to record the polishing rate for each batch after dressing the polishing cloth, or for each predetermined batch.
Thus, if the polishing rate of each batch is recorded, the polishing time can be set more accurately. If the polishing rate is recorded for each predetermined batch, the polishing rate is recorded in the database in advance. It becomes an apparatus that can reduce the time of the preparation process.
　またこのとき、前記シリコンウェーハの研磨前、研磨中、又は研磨後に新研磨剤、アルカリ、及び水を前記タンク内に加えて前記研磨剤の組成が変化しないように調整する機構を有することが好ましい。
　このようなものであれば、各バッチ間で研磨剤が起因のばらつきが減少して研磨速度がより安定するので、仕上がり厚さをより高精度に制御できる。 Further, at this time, it is preferable to add a new abrasive, alkali, and water into the tank before, during, or after polishing the silicon wafer to adjust the composition of the abrasive so as not to change. .
If it is such, since the dispersion | variation resulting from an abrasive | polishing agent between batch reduces, and a grinding | polishing speed | rate will become more stable, finish thickness can be controlled more precisely.
　本発明では、シリコンウェーハの研磨をバッチ式に繰り返す研磨装置において、研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておき、この記録した研磨速度に基づいて研磨時間を設定するので、研磨布のドレッシング状態の変化によって生じる研磨代のばらつきを確実に抑制でき、仕上がり厚さを高精度に制御してウェーハを目標の厚さに研磨できる。 In the present invention, in a polishing apparatus that repeats polishing of silicon wafers in a batch manner, a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth is recorded in a database in advance, and the recorded polishing rate is Since the polishing time is set based on this, the variation in the polishing allowance caused by the change in the dressing state of the polishing pad can be surely suppressed, and the finished thickness can be controlled with high accuracy to polish the wafer to the target thickness.
両面研磨する場合の本発明の研磨装置の一例を示す概略図である。（Ａ）側面断面図。（Ｂ）上方から見た内部構造図。It is the schematic which shows an example of the grinding | polishing apparatus of this invention in the case of performing double-side polishing. (A) Side surface sectional drawing. (B) Internal structure diagram viewed from above. 片面研磨する場合の本発明の研磨装置の一例を示す概略図である。It is the schematic which shows an example of the grinding | polishing apparatus of this invention in the case of single-side grinding | polishing. 研磨布のドレッシング状態の変化に対して研磨速度が変化する様子を説明する説明図である。It is explanatory drawing explaining a mode that a grinding | polishing speed changes with respect to the change of the dressing state of polishing cloth. 実施例１の結果を示す図である。It is a figure which shows the result of Example 1. 実施例２の結果を示す図である。It is a figure which shows the result of Example 2. 比較例の結果を示す図である。It is a figure which shows the result of a comparative example.
　以下、本発明について実施の形態を説明するが、本発明はこれに限定されるものではない。
　従来のシリコンウェーハの研磨において、目標の研磨代と一定の研磨速度から算出した研磨時間を設定して研磨することにより、目標の仕上がり厚さに制御する方法が用いられている。この方法では、例えば研磨剤を調整するなどして、各バッチ間で研磨速度を高度に安定させて研磨する場合においては、比較的精度良く目標の仕上がり厚さを得ることができる。 Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
In conventional silicon wafer polishing, a method of controlling to a target finished thickness by setting a polishing time calculated from a target polishing allowance and a constant polishing rate is used. In this method, for example, when a polishing agent is adjusted to perform polishing with a highly stable polishing rate between batches, a target finished thickness can be obtained with relatively high accuracy.
　しかし、研磨布のドレッシング状態によって研磨速度が変化することによって、目標の研磨代からのずれが各バッチ間で大きくなり、仕上がり厚さにばらつきが発生する。近年、仕上がり厚さの精度の要求が高まるにつれ、このばらつきが問題となってきており、例えば、仕上がり厚さのずれを０．５μｍ以下、さらには０．２μｍ以下にするといった、より高精度に仕上がり厚さを制御することが求められている。
　そこで、本発明者はこのような問題を解決すべく鋭意検討を重ねた。その結果、研磨剤を調整するなどして各バッチ間で研磨速度を高度に安定させて研磨する場合、上記した研磨布のドレッシング状態に応じた研磨速度の変化に一定のパターンがあることを見出した。そして、その変化パターンを考慮に入れることにより、高精度に研磨速度を予測できることを想到し、本発明を完成させた。 However, when the polishing rate changes depending on the dressing state of the polishing cloth, the deviation from the target polishing margin increases between batches, and the finished thickness varies. In recent years, as the demand for the accuracy of the finished thickness has increased, this variation has become a problem. For example, the deviation of the finished thickness is 0.5 μm or less, further 0.2 μm or less. There is a need to control the finished thickness.
Therefore, the present inventor has intensively studied to solve such problems. As a result, when polishing with a highly stable polishing rate between batches by adjusting the polishing agent, etc., it has been found that there is a certain pattern in the change in polishing rate according to the dressing state of the polishing cloth described above. It was. The inventors have conceived that the polishing rate can be predicted with high accuracy by taking the change pattern into consideration, and the present invention has been completed.
　以下、本発明の研磨装置について説明する。まず、両面研磨を行う場合の研磨装置について図１を参照して説明する。
　図１（Ａ）（Ｂ）に示すように、研磨装置１は上下に相対向して設けられた上定盤２と下定盤３を備えており、上下定盤２、３には、それぞれ研磨布４が貼付されている。そして上下定盤２、３の間の中心部にはサンギヤ９が、周縁部にはインターナルギヤ１０が設けられている。キャリア５にはシリコンウェーハＷを保持するための保持孔６が設けられ、複数のキャリア５が上下定盤２、３の間に挟まれるようになっている。 Hereinafter, the polishing apparatus of the present invention will be described. First, a polishing apparatus for performing double-side polishing will be described with reference to FIG.
As shown in FIGS. 1 (A) and 1 (B), the polishing apparatus 1 includes an upper surface plate 2 and a lower surface plate 3 provided opposite to each other in the vertical direction. The cloth 4 is affixed. A sun gear 9 is provided at the center between the upper and lower surface plates 2 and 3, and an internal gear 10 is provided at the periphery. The carrier 5 is provided with a holding hole 6 for holding the silicon wafer W, and a plurality of carriers 5 are sandwiched between the upper and lower surface plates 2 and 3.
　また、サンギヤ９及びインターナルギヤ１０の各歯部にはキャリア５の外周歯が噛合しており、上下定盤２、３が上回転軸７、及び下回転軸８により所定の回転速度でそれぞれ回転されるのに伴い、それぞれのキャリア５は自転しつつサンギヤ９の周りを公転する。キャリア５の保持孔６に保持されたシリコンウェーハＷは、上下の研磨布４と摺接されて両面が同時に研磨される。 Further, the teeth of the sun gear 9 and the internal gear 10 are engaged with the outer peripheral teeth of the carrier 5, and the upper and lower surface plates 2 and 3 are respectively rotated at a predetermined rotational speed by the upper rotating shaft 7 and the lower rotating shaft 8. As the carrier rotates, each carrier 5 revolves around the sun gear 9 while rotating. The silicon wafer W held in the holding hole 6 of the carrier 5 is brought into sliding contact with the upper and lower polishing cloths 4 and both surfaces thereof are polished simultaneously.
　この際、タンク１２内の研磨剤１３をノズル１１から研磨布４に供給する。供給された研磨剤１３は、例えば、研磨中に一部が飛び散ったり、ミストとして排気されるなどにより回収できない分を除いて、定盤受け１８に流れ落ちて配管（不図示）に集められた後、タンク１２内に回収され、以降の研磨に用いられる。このように、研磨剤１３は循環システム１４によってタンク１２と研磨布４（及び上下定盤２、３）との間を循環する。
　また、研磨装置１は研磨前に、所定の研磨代となるように研磨時間を設定するための制御手段１５を有している。この制御手段１５は、循環システム１４、上下回転軸７、８に接続されており、研磨が設定した研磨時間で行われるように研磨の開始と終了を制御する。 At this time, the abrasive 13 in the tank 12 is supplied from the nozzle 11 to the polishing pad 4. The supplied polishing agent 13 flows down to the surface plate receiver 18 and is collected in a pipe (not shown), except for a part that cannot be recovered due to, for example, a part scattered during polishing or exhausted as mist. These are collected in the tank 12 and used for subsequent polishing. As described above, the abrasive 13 circulates between the tank 12 and the polishing cloth 4 (and the upper and lower surface plates 2 and 3) by the circulation system 14.
Further, the polishing apparatus 1 has a control means 15 for setting a polishing time so as to obtain a predetermined polishing allowance before polishing. This control means 15 is connected to the circulation system 14 and the upper and lower rotary shafts 7 and 8, and controls the start and end of polishing so that the polishing is performed at the set polishing time.
　また、研磨布４をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく記録手段１７が設けられている。この記録手段１７は制御手段１５に接続され、制御手段１５からデータベースに記録した研磨速度を参照できるようになっている。制御手段１５は、所定の研磨代となるように研磨時間を設定する際に、データベースに記録された研磨布４をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて研磨時間を設定する。なお、記録手段と制御手段は、パーソナルコンピュータなどで構成することができる。 Further, a recording means 17 is provided for previously recording in the database the polishing rate that changes as the number of batches after dressing the polishing cloth 4 increases. This recording means 17 is connected to the control means 15 so that the polishing speed recorded in the database from the control means 15 can be referred to. When the control means 15 sets the polishing time to be a predetermined polishing allowance, the polishing time is based on the polishing speed that changes with the increase in the number of batches after dressing the polishing cloth 4 recorded in the database. Set. Note that the recording means and the control means can be constituted by a personal computer or the like.
　このように構成された研磨装置１により、循環システム１４で研磨剤１３を研磨布４に供給しながらシリコンウェーハＷを研磨布４に摺接させて制御手段１５で設定した研磨時間で研磨する。そして、供給した研磨剤１３をタンク１２内に回収して循環させながらシリコンウェーハＷの研磨をバッチ式に繰り返す。
　このような研磨装置を用いれば、研磨布のドレッシング状態が変化することによって発生する研磨速度の変化による研磨代のばらつきを確実に抑制できる。その結果、仕上がり厚さを高精度に制御してウェーハを目標の厚さに研磨できる。 With the polishing apparatus 1 configured in this manner, the silicon wafer W is brought into sliding contact with the polishing cloth 4 while being supplied with the polishing agent 13 to the polishing cloth 4 by the circulation system 14 and is polished for the polishing time set by the control means 15. The polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated.
By using such a polishing apparatus, it is possible to reliably suppress variations in the polishing allowance due to a change in polishing rate that occurs when the dressing state of the polishing cloth changes. As a result, the finished thickness can be controlled with high accuracy, and the wafer can be polished to a target thickness.
　このとき、記録手段１７によって、研磨布４をドレッシングした後から次のドレッシングを行うまでの間の各バッチの研磨速度を記録するようにすれば、研磨布のドレッシング状態が変化することによって発生する研磨速度の変化をより精度良く研磨時間に反映でき、研磨代のばらつきをより確実に抑制できる。この場合の、制御手段１５によって研磨時間を設定する際に用いる研磨速度をデータベースから求める具体的方法の一例を以下に説明する。
　ここで、以下の式中の［ＤｎＢｍ］はｎ回目のドレッシング後のｍ回目のバッチにおける研磨速度を示す。 At this time, if the recording means 17 records the polishing rate of each batch after dressing the polishing cloth 4 until the next dressing is performed, it occurs when the dressing state of the polishing cloth changes. Changes in the polishing rate can be reflected more accurately in the polishing time, and variations in polishing allowance can be more reliably suppressed. In this case, an example of a specific method for obtaining the polishing rate used when setting the polishing time by the control means 15 from the database will be described below.
Here, [D n B m ] in the following formula represents the polishing rate in the m-th batch after the n-th dressing.
　最も研磨速度の変化量が大きいドレッシング直後の１バッチ目は以下の式１で示すように、データベースに記録されているドレッシング直後の１バッチ目の研磨速度の平均値を用いる。
Figure JPOXMLDOC01-appb-I000001
　ドレッシング直後の１バッチ目以外のバッチでは、直前に行った研磨における研磨速度からの変化予測量をデータベースを参照することによって求め、その変化予測量を適用した研磨速度を用いる。具体的には、式２に示すように、差の平均から求めた変化予測量を用いて研磨速度を求める。或いは、式３に示すように、割合の平均から求めた変化予測量を用いて研磨速度を求める。
Figure JPOXMLDOC01-appb-I000002
Figure JPOXMLDOC01-appb-I000003
For the first batch immediately after the dressing with the largest amount of change in the polishing rate, the average value of the polishing rate for the first batch immediately after the dressing recorded in the database is used as shown in the following formula 1.
Figure JPOXMLDOC01-appb-I000001
In batches other than the first batch immediately after dressing, a predicted change amount from the polishing rate in the polishing performed immediately before is obtained by referring to a database, and a polishing rate to which the predicted change amount is applied is used. Specifically, as shown in Equation 2, the polishing rate is obtained using the predicted change amount obtained from the average difference. Alternatively, as shown in Equation 3, the polishing rate is obtained using the predicted change amount obtained from the average of the ratios.
Figure JPOXMLDOC01-appb-I000002
Figure JPOXMLDOC01-appb-I000003
　記録手段が、上記したように、研磨布をドレッシングした後の各バッチの研磨速度を記録するのではなく、研磨布をドレッシングした後から次のドレッシングを行うまでの間、所定のバッチ毎の研磨速度を記録するものであっても良い。例えば、１０バッチ毎にドレッシングする場合において、ドレッシング後の１バッチ目、３－５バッチ目のいずれか、６－７バッチ目のいずれか、８－１０バッチ目のいずれかの研磨速度をデータベースに記録する。このように所定のバッチ毎の研磨速度のみを記録することでも、研磨速度の変化を十分精度良く研磨時間に反映して研磨代のばらつきを抑制しつつ、研磨速度を予めデータベースに記録しておく工程の時間を削減できる。 As described above, the recording means does not record the polishing rate of each batch after dressing the polishing cloth, but performs polishing for each predetermined batch until the next dressing is performed after dressing the polishing cloth. The speed may be recorded. For example, in the case of dressing every 10 batches, the polishing speed of any one of the first batch, 3-5 batch, 6-7 batch, 8-10 batch after dressing is stored in the database. Record. Even when only the polishing rate for each predetermined batch is recorded in this way, the polishing rate is recorded in advance in the database while reflecting the change in the polishing rate in the polishing time with sufficient accuracy and suppressing the variation in the polishing allowance. Process time can be reduced.
　また、研磨速度以外にも、例えば、シリコンウェーハの厚さ、抵抗率、及び結晶軸や、スラリーライフなどを記録し、これらを状態変数化して研磨時間を設定することもできる。
　また、研磨装置１は、シリコンウェーハＷの研磨前、研磨中、又は研磨後の少なくともいずれかで新研磨剤、アルカリ、及び水をタンク１２内に加えて研磨剤１３の組成が変化しないように調整する機構１６を有していることが好ましい。
　この機構を用いて研磨中に研磨剤の組成が変化しないように調整することによって、各バッチ間で研磨剤の変化に起因したばらつきが抑制され、研磨速度がより安定して、研磨布のドレッシング状態に応じた研磨速度の変化の一定パターンの精度も高まるので、結果として仕上がり厚さをより高精度に制御できる。 In addition to the polishing rate, for example, the thickness, resistivity, crystal axis, slurry life, etc. of the silicon wafer can be recorded, and these can be converted into state variables to set the polishing time.
In addition, the polishing apparatus 1 adds a new abrasive, alkali, and water to the tank 12 at least before, during, or after polishing the silicon wafer W so that the composition of the abrasive 13 does not change. It is preferable to have a mechanism 16 for adjustment.
By adjusting so that the composition of the abrasive does not change during polishing using this mechanism, the variation caused by the change of the abrasive between batches is suppressed, the polishing speed is more stable, and the dressing of the polishing cloth is performed. Since the accuracy of the constant pattern of the change in the polishing rate according to the state is also increased, the finished thickness can be controlled with higher accuracy as a result.
　ここで、研磨布のドレッシング状態の変化に対して研磨速度が変化する様子を図３に示す。図３は、５バッチ、又は１０バッチ毎にドレッシングを行った際の各バッチにおける研磨速度の変化を示したものである。尚、研磨速度は、最初のバッチにおける研磨速度を１００％としたときの相対値で示されている。図３に示すように、ドレッシング後の研磨速度が相対的に周期性をもって変化していることが分かる。例えば、丸で囲んだ点はドレッシング直後の１バッチ目を示しており、ほぼ同じ研磨速度になっていることが分かる。 Here, FIG. 3 shows how the polishing rate changes with respect to the change in the dressing state of the polishing cloth. FIG. 3 shows the change in the polishing rate in each batch when dressing is performed every 5 batches or 10 batches. The polishing rate is shown as a relative value when the polishing rate in the first batch is 100%. As shown in FIG. 3, it can be seen that the polishing rate after dressing changes with a relative periodicity. For example, the circled points indicate the first batch immediately after dressing, and it can be seen that the polishing speed is almost the same.
　次に、片面研磨を行う場合の研磨装置について図２を参照して説明する。
　図２に示すように、研磨装置２１は、研磨布２４が貼り付けられた定盤２３と、ノズル２５と、研磨ヘッド２２を有している。このような研磨装置２１では、研磨ヘッド２２でシリコンウェーハＷを保持し、タンク１２内の研磨剤１３をノズル２５を介して研磨布２４上に供給するとともに、定盤２３と研磨ヘッド２２をそれぞれ回転させてワークＷの表面を研磨布２４に摺接させることにより研磨する。 Next, a polishing apparatus for performing single-side polishing will be described with reference to FIG.
As shown in FIG. 2, the polishing apparatus 21 includes a surface plate 23 to which a polishing cloth 24 is attached, a nozzle 25, and a polishing head 22. In such a polishing apparatus 21, the silicon wafer W is held by the polishing head 22, the abrasive 13 in the tank 12 is supplied onto the polishing cloth 24 through the nozzle 25, and the surface plate 23 and the polishing head 22 are respectively connected. Polishing is performed by rotating and bringing the surface of the workpiece W into sliding contact with the polishing pad 24.
　また、研磨装置２１は、上記した両面研磨する研磨装置１と同様に、供給した研磨剤１３を回収して循環させる循環システム１４、所定の研磨代となるように研磨時間を設定するための制御手段１５、研磨布２４をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく記録手段１７を有しており、制御手段１５は、研磨装置１と同様に、データベースに記録された研磨布２４をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて研磨時間を設定する。なお、供給された研磨剤１３は、上記研磨装置１と同様に一部を除いて、定盤受け１８に流れ落ちて配管（不図示）に集められた後、タンク１２内に回収され、以降の研磨に用いられる。 In addition, the polishing apparatus 21, like the above-described polishing apparatus 1 that performs double-side polishing, a circulation system 14 that collects and circulates the supplied polishing agent 13, and a control for setting a polishing time so as to have a predetermined polishing allowance. Means 15 and recording means 17 for pre-recording in the database the polishing rate that changes as the number of batches after dressing the polishing cloth 24 increases. The control means 15 is similar to the polishing apparatus 1. The polishing time is set based on the polishing rate that changes with the increase in the number of batches after dressing the polishing cloth 24 recorded in the database. The supplied abrasive 13, except for a part of the polishing apparatus 1, flows down to the surface plate receiver 18 and is collected in a pipe (not shown), and then collected in the tank 12, and thereafter Used for polishing.
　次に、本発明のシリコンウェーハの研磨方法について説明する。ここでは、図１に示すような本発明の研磨装置１を用いた場合について説明する。
　まず、実験を行うなどして、図３に示したような研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を記録手段１７により予めデータベースに記録する。
　次に、制御装置１５により、データベースに記録された研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて、研磨が所定の研磨代で行われるように研磨時間を設定する。ここで、研磨時間の設定時に用いる研磨速度は、上記した本発明の研磨装置１の説明で記載した方法によって決定することができる。 Next, the method for polishing a silicon wafer according to the present invention will be described. Here, the case where the polishing apparatus 1 of the present invention as shown in FIG. 1 is used will be described.
First, by conducting an experiment or the like, the polishing speed that changes with the increase in the number of batches after dressing the polishing cloth as shown in FIG.
Next, the control device 15 sets the polishing time so that polishing is performed at a predetermined polishing allowance based on the polishing rate that changes as the number of batches increases after dressing the polishing cloth recorded in the database. To do. Here, the polishing rate used when setting the polishing time can be determined by the method described in the description of the polishing apparatus 1 of the present invention described above.
　次に、タンク１２内に貯蔵された研磨剤１３を定盤２、３上に貼り付けられた研磨布４に供給しながらシリコンウェーハＷを研磨布４に摺接させて研磨する。この際、設定した研磨時間で研磨が終了するように制御装置１５により制御する。そして、供給された研磨剤１３をタンク１２内に回収して循環させながらシリコンウェーハＷの研磨をバッチ式に繰り返す。この研磨を繰り返す間、一定のバッチ回数毎に研磨布４をドレッシングする。
　このような研磨方法であれば、研磨布のドレッシング状態が変化することによって発生する研磨速度の変化による研磨代のばらつきを確実に抑制できる。その結果、仕上がり厚さを高精度に制御してウェーハを目標の厚さに研磨できる。 Next, the silicon wafer W is slidably brought into contact with the polishing cloth 4 while the polishing agent 13 stored in the tank 12 is supplied to the polishing cloth 4 attached on the surface plates 2 and 3. At this time, the controller 15 controls the polishing so that the polishing is completed within the set polishing time. The polishing of the silicon wafer W is repeated batchwise while the supplied abrasive 13 is collected in the tank 12 and circulated. While this polishing is repeated, the polishing cloth 4 is dressed every certain number of batches.
With such a polishing method, it is possible to reliably suppress variations in the polishing allowance due to a change in polishing rate that occurs when the dressing state of the polishing cloth changes. As a result, the finished thickness can be controlled with high accuracy, and the wafer can be polished to a target thickness.
　このとき、研磨後のシリコンウェーハの研磨代を測定し、その測定した研磨代と設定した研磨時間とで算出した研磨速度を、次回以降の研磨で使用するために、データベースに追加していくこともできる。このようにすれば、より高精度に研磨速度を予想できるようになる。
　またこのとき、研磨速度をデータベースに記録しておく工程において、研磨布をドレッシングした後の各バッチ、或いは所定のバッチ毎の研磨速度を記録しておくことができる。
　このように各バッチの研磨速度を記録しておけば、より正確に研磨時間を設定でき、所定のバッチ毎の研磨速度を記録すれば、研磨速度を予めデータベースに記録しておく工程の時間を削減できる。 At this time, measure the polishing allowance of the silicon wafer after polishing, and add the polishing rate calculated by the measured polishing allowance and the set polishing time to the database for use in the subsequent polishing. You can also. In this way, the polishing rate can be predicted with higher accuracy.
At this time, in the step of recording the polishing rate in the database, the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch can be recorded.
If the polishing rate of each batch is recorded in this way, the polishing time can be set more accurately. If the polishing rate for each predetermined batch is recorded, the time for the step of recording the polishing rate in the database in advance can be set. Can be reduced.
　またこのとき、シリコンウェーハの研磨前、研磨中、又は研磨後の少なくともいずれかで新研磨剤、アルカリ、及び水を前記タンク内に加えて研磨剤の組成が変化しないように調整することが好ましい。
　このようにすれば、各バッチ間で研磨剤の変化に起因したばらつきが抑制され、研磨速度がより安定して、仕上がり厚さをより高精度に制御できる。 Further, at this time, it is preferable to adjust so that the composition of the abrasive is not changed by adding a new abrasive, alkali, and water into the tank at least before, during, or after the polishing of the silicon wafer. .
In this way, variations caused by changes in the abrasive between batches are suppressed, the polishing rate is more stable, and the finished thickness can be controlled with higher accuracy.
　以下、本発明の実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。 Hereinafter, the present invention will be described more specifically with reference to Examples and Comparative Examples of the present invention, but the present invention is not limited to these.
（実施例１）
　図１に示すような本発明の研磨装置を用い、本発明のシリコンウェーハの研磨方法に従って、直径３００ｍｍのシリコンウェーハの研磨をバッチ式に繰り返した。ここで、１バッチ当たりの研磨枚数を５枚とした。また、エッチング済みのシリコンウェーハを、研磨前の厚さが７９３±２μｍ程度から７７７μｍとなるように、すなわち、研磨代が１６μｍ程度となるように研磨時間を設定し、研磨圧２００ｇ／ｃｍ２で研磨した。また、研磨速度をデータベースに記録しておく工程において、研磨布をドレッシングした後の各バッチの研磨速度を記録しておいた。記録した研磨速度のデータベースから該当するドレッシング後のバッチ回数に相当する研磨速度を算出し、予想した結果を次々に適用し、連続研磨を行った。 (Example 1)
Using a polishing apparatus of the present invention as shown in FIG. 1, polishing of a silicon wafer having a diameter of 300 mm was repeated batchwise according to the method for polishing a silicon wafer of the present invention. Here, the number of polished sheets per batch was five. In addition, the polishing time of the etched silicon wafer is set so that the thickness before polishing is about 793 ± 2 μm to 777 μm, that is, the polishing margin is about 16 μm, and the polishing pressure is 200 g / cm 2 . Polished. Further, in the step of recording the polishing rate in the database, the polishing rate of each batch after dressing the polishing cloth was recorded. A polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing.
　研磨後のシリコンウェーハの目標仕上がり厚さからのずれを評価した結果を図４に示す。図４に示すように、後述する比較例の結果と比べ、目標厚さからのずれが改善されており、０．５μｍ以下と非常に良好な結果が得られた。また、全体の８０％以上のバッチにおいて目標の０．２μｍ以下のずれを達成できた。
　このように、本発明により、研磨布のドレッシング状態の変化によって生じる研磨速度の変化による研磨代のばらつきを抑制し、仕上がり厚さを高精度に制御できることが確認できた。 FIG. 4 shows the results of evaluating the deviation from the target finished thickness of the polished silicon wafer. As shown in FIG. 4, the deviation from the target thickness was improved as compared with the result of the comparative example described later, and a very good result of 0.5 μm or less was obtained. Moreover, the target deviation of 0.2 μm or less was achieved in 80% or more of the batches.
As described above, according to the present invention, it was confirmed that the variation in the polishing allowance due to the change in the polishing rate caused by the change in the dressing state of the polishing cloth was suppressed, and the finished thickness could be controlled with high accuracy.
（実施例２）
　研磨速度をデータベースに記録しておく工程において、研磨布をドレッシングした後の所定のバッチ毎の研磨速度を記録しておいた以外、実施例１と同様にしてシリコンウェーハを研磨し、同様に評価した。ここで、ドレッシングした後の１、３、６、８バッチ目における研磨速度を予めデータベースに記録しておいた。記録した研磨速度のデータベースから該当するドレッシング後のバッチ回数に相当する研磨速度を算出し、予想した結果を次々に適用し、連続研磨を行った。
　その結果を図５に示す。図５に示すように、実施例１の結果と比べ、目標厚さからのずれが若干大きくなるが、後述する比較例の結果と比べ、改善されていることが分かった。実施例２では、全体の７０％程度のバッチにおいて目標の０．２μｍ以下のずれを達成できた。 (Example 2)
In the step of recording the polishing rate in the database, the silicon wafer was polished and evaluated in the same manner as in Example 1 except that the polishing rate for each predetermined batch after dressing the polishing cloth was recorded. did. Here, the polishing rates in the first, third, sixth and eighth batches after dressing were recorded in advance in a database. A polishing rate corresponding to the number of batches after dressing was calculated from the recorded polishing rate database, and the predicted results were applied one after another to perform continuous polishing.
The result is shown in FIG. As shown in FIG. 5, the deviation from the target thickness was slightly larger than the result of Example 1, but it was found that the result was improved compared to the result of Comparative Example described later. In Example 2, the target deviation of 0.2 μm or less could be achieved in about 70% of the batch.
（比較例）
　本発明の記録手段、制御手段を有さない従来の研磨装置を用い、研磨速度をデータベースに記録せず、研磨時間を直前に測定した研磨速度を用いて設定した以外、実施例１と同様な条件でシリコンウェーハを研磨し、実施例１と同様に評価した。
　その結果を図６に示す。図６に示すように、実施例１、２に比べ、目標厚さからのずれが大幅に悪化していることが分かった。 (Comparative example)
A conventional polishing apparatus having no recording means or control means of the present invention was used, and the polishing rate was not recorded in the database, and the polishing time was set using the polishing rate measured immediately before, and the same as in Example 1. The silicon wafer was polished under the conditions and evaluated in the same manner as in Example 1.
The result is shown in FIG. As shown in FIG. 6, it was found that the deviation from the target thickness was significantly worse than in Examples 1 and 2.
　なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 Note that the present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

Claims (6)

  1. 　所定の研磨代となるように研磨時間を設定し、タンク内に貯蔵された研磨剤を定盤上に貼り付けられた研磨布に供給しながらシリコンウェーハを前記研磨布に摺接させて前記設定した研磨時間で研磨し、前記供給した研磨剤を前記タンク内に回収して循環させながら前記シリコンウェーハの研磨をバッチ式に繰り返し、一定のバッチ回数毎に前記研磨布をドレッシングするシリコンウェーハの研磨方法において、
    　前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく工程と、
    　前記所定の研磨代となるように前記研磨時間を設定する際に、前記データベースに記録された前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて前記研磨時間を設定する工程とを有することを特徴とするシリコンウェーハの研磨方法。     The polishing time is set to be a predetermined polishing allowance, and the silicon wafer is brought into sliding contact with the polishing cloth while supplying the polishing agent stored in the tank to the polishing cloth attached on the surface plate. Polishing the silicon wafer by polishing the silicon wafer in a batch manner while polishing the supplied polishing agent in the tank and circulating it in a batch manner, and dressing the polishing cloth every certain number of batches In the method
    A step of pre-recording in a database a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth;
    When setting the polishing time to be the predetermined polishing allowance, the polishing time is set based on a polishing rate that changes with an increase in the number of batches after dressing the polishing cloth recorded in the database. And a step of setting the silicon wafer.
  2. 　前記研磨速度をデータベースに記録しておく工程において、前記研磨布をドレッシングした後の各バッチ、或いは所定のバッチ毎の前記研磨速度を記録しておくことを特徴とする請求項１に記載のシリコンウェーハの研磨方法。 2. The silicon according to claim 1, wherein in the step of recording the polishing rate in a database, the polishing rate for each batch after dressing the polishing cloth or for each predetermined batch is recorded. Wafer polishing method.
  3. 　前記シリコンウェーハの研磨前、研磨中、又は研磨後に新研磨剤、アルカリ、及び水を前記タンク内に加えて前記研磨剤の組成が変化しないように調整することを特徴とする請求項１又は請求項２に記載のシリコンウェーハの研磨方法。 The new abrasive, alkali, and water are added to the tank before, during, or after the polishing of the silicon wafer so as not to change the composition of the abrasive. Item 3. A method for polishing a silicon wafer according to Item 2.
  4. 　研磨布が貼り付けられた定盤と、シリコンウェーハを保持する保持手段と、タンク内に貯蔵された研磨剤を前記研磨布に供給し、該供給した研磨剤を前記タンク内に回収して循環させる循環システムと、所定の研磨代となるように研磨時間を設定するための制御手段とを有し、前記循環システムで前記研磨剤を前記研磨布に供給しながら前記シリコンウェーハを前記研磨布に摺接させて前記制御手段で設定した研磨時間で研磨し、前記供給した研磨剤を前記タンク内に回収して循環させながら前記シリコンウェーハの研磨をバッチ式に繰り返す研磨装置において、
    　さらに、前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度を予めデータベースに記録しておく記録手段を有し、
    　前記制御手段は、前記所定の研磨代となるように前記研磨時間を設定する際に、前記記録手段に記録された前記研磨布をドレッシングした後のバッチ回数の増加に伴って変化する研磨速度に基づいて前記研磨時間を設定するものであることを特徴とする研磨装置。     A surface plate to which an abrasive cloth is attached, a holding means for holding a silicon wafer, and an abrasive stored in a tank are supplied to the abrasive cloth, and the supplied abrasive is recovered and circulated in the tank. And a control unit for setting a polishing time so as to obtain a predetermined polishing allowance, while supplying the abrasive to the polishing cloth in the circulation system, the silicon wafer is applied to the polishing cloth. In a polishing apparatus that polishes the silicon wafers batchwise while being slid in contact with the polishing time set by the control means and collecting and circulating the supplied abrasive in the tank,
    Furthermore, it has a recording means for previously recording in the database the polishing rate that changes with an increase in the number of batches after dressing the polishing cloth,
    The control means sets the polishing time so as to be the predetermined polishing allowance to a polishing speed that changes with an increase in the number of batches after dressing the polishing cloth recorded in the recording means. A polishing apparatus, wherein the polishing time is set based on the polishing time.
  5. 　前記記録手段は、前記研磨布をドレッシングした後の各バッチ、或いは所定のバッチ毎の前記研磨速度を記録するものであることを特徴とする請求項４に記載の研磨装置。 5. The polishing apparatus according to claim 4, wherein the recording means records the polishing rate for each batch after dressing the polishing cloth, or for each predetermined batch.
  6. 　前記シリコンウェーハの研磨前、研磨中、又は研磨後に新研磨剤、アルカリ、及び水を前記タンク内に加えて前記研磨剤の組成が変化しないように調整する機構を有することを特徴とする請求項４又は請求項５に記載の研磨装置。 A new abrasive, alkali, and water are added to the tank before, during, or after polishing the silicon wafer to adjust the composition of the abrasive so as not to change. The polishing apparatus according to claim 4 or 5.
PCT/JP2012/004902 2011-09-01 2012-08-02 Silicon wafer polishing method and polishing device WO2013031090A1 (en)

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