WO2013027644A1 - 荷電粒子線装置 - Google Patents
荷電粒子線装置 Download PDFInfo
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- WO2013027644A1 WO2013027644A1 PCT/JP2012/070799 JP2012070799W WO2013027644A1 WO 2013027644 A1 WO2013027644 A1 WO 2013027644A1 JP 2012070799 W JP2012070799 W JP 2012070799W WO 2013027644 A1 WO2013027644 A1 WO 2013027644A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/04—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring contours or curvatures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2448—Secondary particle detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24495—Signal processing, e.g. mixing of two or more signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24571—Measurements of non-electric or non-magnetic variables
- H01J2237/24578—Spatial variables, e.g. position, distance
Definitions
- the present invention relates to a charged particle beam apparatus, and more particularly to an apparatus, method, and computer program suitable for observing and measuring a sample with high accuracy using a backscattered electron image.
- SEM Scanning Electron Microscope
- the reflected electrons are high-energy signal electrons, and an image having a contrast depending on the sample composition is formed without depending on the unevenness of the sample.
- Patent Document 1 when a reflected electron is detected and amplified to form a reflected electron image, the scanning condition of the electron beam irradiated onto the sample is substantially the same before and after the magnification change, and the magnification is changed. A technique for forming an appropriate backscattered electron image without recourse is disclosed.
- Patent Document 2 after the secondary electron image is selectively displayed and the magnification and the like are adjusted, the brightness and contrast of the secondary electron image and the reflected electron image that is not selectively displayed are adjusted to change in conjunction with each other. Thus, it is described that the observation is switched to the display of the reflected electron image.
- Patent Document 3 in order to detect and process a reflected electron signal or a secondary electron signal and an X-ray signal and obtain an integrated signal having a high contrast and a high signal / noise (S / N) ratio, It is disclosed that the addition and division processing is performed by controlling the bias and the weighting ratio.
- calibration management of magnification and measurement value is performed by acquiring an image under a certain condition using a standard sample ( ⁇ scale) made of a silicon material having a known dimension and measuring the dimension. Specifically, a magnification correction coefficient is obtained from the length measurement value, the amount of scanning deflection is corrected, and the apparatus is adjusted so that the length measurement value becomes an accurate value. Further, the dimension measurement of the standard sample itself is managed by a calibration apparatus using light diffraction that irradiates a laser or the like to the diffraction grating formed by the concave / convex grating pattern on the sample.
- the magnification may be changed by changing the optical conditions in order to switch the type of signal electrons to be detected.
- the measurement value such as the dimension is affected. Therefore, when the optical condition is switched between the secondary electrons and the reflected electrons, it is necessary to perform an appropriate calibration in consideration of the magnification variation and the measurement value error caused thereby.
- Patent Document 1 and Patent Document 2 do not take into account changes in magnification and length measurement values in reflected electron signal detection. Further, in the method described in Patent Document 3, the magnification of each signal can be adjusted in order to obtain an integrated signal. However, magnification variation and length measurement caused by a change in optical conditions when different signals are detected. There is no disclosure regarding the value error and a specific method for correcting these. Therefore, the problem in the present invention cannot be solved directly by using any method.
- An object of the present invention is to provide a charged particle beam apparatus, a method, and a method for correcting a magnification variation and a length measurement value error caused by switching signal detection between secondary electrons and reflected electrons with high accuracy, and To propose a computer program.
- a relative correction coefficient of both signals is obtained from data obtained in advance for magnification or length measurement value in each electro-optical condition for detecting secondary electron signals and reflected electron signals.
- SEM scanning electron microscope
- 1 is a schematic cross-sectional view of a semiconductor wafer and a magnetic head.
- 1 is a schematic cross-sectional view of a semiconductor wafer and a magnetic head.
- the figure which shows the electron beam scanning on the sample in a secondary electron signal detection optical condition, a signal waveform, and a line profile The figure which shows the electron beam scanning on the sample in a secondary electron signal detection optical condition, a signal waveform, and a line profile.
- the cross-sectional schematic of the sample which has various materials and surface shape.
- the cross-sectional schematic of the sample which has various materials and surface shape.
- FIGS. 2B and 2C are cross-sectional views of the sample when a low-step pattern is formed on the sample or a thin film having almost no step is coated.
- the substance demonstrated below is an example, and is not limited to this.
- the substrate 201 of FIGS. 2A and 2B is made of a material having high transmittance in the ultraviolet region such as synthetic quartz glass, and circuit patterns 202 and 203 formed thereon are made of chromium (Cr) or molybdenum / silicon oxide ( It is made of a material having a low ultraviolet transmittance such as MoSiO). Further, Cr may be formed on Mo ⁇ SiO depending on the sample preparation process.
- a magnetic head sample of a hard disk has a circuit pattern of Al 2 O 3 206 or permalloy (Fe—) on a ceramic substrate 205 made of Al 2 O 3 —TiC (AlTiC).
- a pattern of Ni) alloy 207 is formed, and a flat surface structure is coated with diamond-like carbon 208 or the like of about several nanometers as a protective film on the surface. Therefore, as in the case described above, the reliability of accuracy in sample observation and length measurement decreases.
- the quality of the secondary electron image is deteriorated even in a sample whose surface is charged, and an accurate sample may not be observed.
- the substrate 201 on the photomask is made of an insulating material such as glass, so that charge-up (positive charging) gradually progresses in the measurement and a potential barrier is generated, and secondary electrons cannot escape from the sample surface. It is caused by not being detected.
- the SEM the SEM, a control device mounted on the SEM, or a control device connected to the SEM via a communication line or the like will be described as an example, but the present invention is not limited to this. You may make it process using a general purpose arithmetic unit with a computer program. Further, the present invention can also be applied to the case of observing and measuring a sample with another charged particle beam apparatus.
- the present embodiment is not limited to the application to the samples shown below, and other low step samples, flat samples, charged samples, and the aspect ratio is high, and it is difficult to detect secondary electrons from the deep hole bottom. It is applied to detect a reflected electron signal instead of a secondary electron signal by switching signal detection between a secondary electron and a reflected electron, such as a sample, or to adjust the mixing ratio of both signals. It is also effective for various samples.
- FIG. 1 is a schematic configuration diagram of a scanning electron microscope (SEM).
- SEM scanning electron microscope
- the retarding voltage is a negative voltage applied to the sample 107 (sample holder 108 or sample stage 109) side in order to converge the electron beam 102 without damaging the circuit pattern on the sample 107. Thereby, the irradiation energy of the electron beam 102 is controlled.
- the detector 114 has a built-in photomultiplier tube, which generates a voltage according to the detected amount of electrons. After this is processed by the signal processing device 115, it is displayed on the image display unit 116 as an image.
- the signal processing device 115 forms a profile waveform with the vertical axis representing the signal amount and the horizontal axis representing the scanning position of the electron beam based on secondary electrons emitted from the sample. Then, the pattern dimension is measured by obtaining the distance between the peaks of the profile waveform.
- secondary electrons are low energy signal electrons of less than about 50 eV and reflected electrons are high energy signal electrons of about 50 eV or more, these are controlled by controlling the voltage and other optical parameters applied to each electrode constituting the SEM.
- the signal detection can be selected and switched between them.
- the above conditions are mainly set in (1) an electron optical system and / or (2) an electron detection system.
- a secondary having low energy for example, by applying a negative voltage (booster voltage) larger than the voltage on the sample 107 side to the booster electrode 110 disposed above the facing electrode 119 or the objective lens 106, a secondary having low energy. It is also possible to pull back the electrons 112 toward the sample 107 and selectively detect only the high-energy reflected electrons 111. In this case, a positive voltage is applied to the conversion electrode 117, and the backscattered electrons 111 moved to the electron gun 101 side from the objective lens 106 are further lifted and introduced into the detector 114 (see backscattered electrons 118). Note that the electrode to which the negative voltage is applied is not limited to the example in this embodiment.
- FIG. 8 shows the basic structure of the energy filter.
- the energy filter includes two shield meshes 801a and a filter mesh 801b. These meshes are provided with openings 802 for allowing the electron beam 102 to pass therethrough. There may be one filter mesh 801b or a plurality of filter meshes 801b, and a power source 803 for applying a filter voltage is connected.
- the reflected electrons 111 and the secondary electrons 112 separated according to the magnitude of energy are detected by the reflected electron detector 804a and the secondary electron detector 804b, respectively.
- the present embodiment is not limited to the above (1) and (2), and other optical parameters such as voltage and current applied to or supplied to other electrodes and coils constituting the SEM are controlled.
- other optical parameters such as voltage and current applied to or supplied to other electrodes and coils constituting the SEM are controlled.
- it is possible to set signal detection optical conditions for the reflected electrons 111 and the secondary electrons 112.
- the control device includes an arithmetic device, and the arithmetic device controls the device based on an SEM operation program called a recipe.
- FIG. 9 is a schematic configuration diagram of a semiconductor measurement / inspection system including an SEM.
- This system includes an SEM main body 901, an A / D converter 903, and a control device 904.
- the control device 904 includes an evaluation condition setting unit 908, a measurement condition setting unit 909, an image forming unit 910, a data acquisition unit 911, a correction data calculation unit 912, and a deflector control unit 913.
- the SEM main body 901 irradiates a sample such as a semiconductor wafer with an electron beam, captures electrons emitted from the sample with a detector 902, and converts them into a digital signal with an A / D converter 903.
- the digital signal is input to the control device 904 and stored in the memory 906, and image processing according to the purpose is performed by image processing hardware such as a CPU imaged in the arithmetic device 905 having various functions.
- the arithmetic device 905 also has a function of creating a line profile based on the detection signal and measuring a dimension between peaks of the profile.
- control device 904 is connected to an input device 907 having an input means, and an image or measurement result is displayed to the operator on a display device provided in the input device 907 or an external display (not shown). It has functions such as GUI (Graphical User Interface) to display.
- GUI Graphic User Interface
- control and processing in the control device 904 can be assigned to a CPU or an electronic computer equipped with a memory capable of storing images and processed and controlled. Further, the control device 904 reads out an imaging recipe including the coordinates of an electronic device required for measurement, a pattern matching template used for positioning, imaging conditions, or the like, or reads the recipe manually or electronic device It is also possible to connect via a network or the like to an imaging recipe creation device created by utilizing the design data.
- FIG. 3A is a schematic cross-sectional view of electron beam scanning on a sample.
- the scanning width when the electron beam 301 scans the sample 302 that is, the deflection width on the sample surface of the electron beam 301 is L, and the display width of the formed image 303 by signal processing shown in FIG.
- FIG. 3C shows the positional relationship among lenses, deflectors, scanning coils, etc. in the SEM electron optical system.
- the electron beam 301 is converged on the condenser lens 305 and scanned on the sample 302.
- the electron beam is adjusted so as to scan and deflect with a constant width on the sample surface.
- the correlation among the deflection width L and magnification M of the sample surface, the acceleration voltage V a of the primary electron beam, and the deflection current amount I def applied to the deflector is shown as follows.
- K opt Electron optical system characteristic correction coefficient regarding magnification
- K opt is the acceleration voltage V a that affects the electron optical system, and the energy of the electron beam irradiated on other specimens that is not shown in equation (2) Is a function of the optical parameters acting on
- Measured value calibration management uses standard samples as described above. An electron beam is scanned on the standard sample at a fixed magnification or the like, and the scanning deflection amount is corrected so that the line / space pattern dimensions of the acquired SEM image also have the same value.
- the detection signal is switched by obtaining the relative correction coefficient K opt (BSE / SE) in the detection conditions of the secondary electron signal and the reflected electron signal using reference data acquired in advance.
- the scanning deflection amount is corrected by predicting magnification fluctuation and length measurement value error.
- K opt (BSE / SE) K opt (BSE / SE) can be obtained by calculation.
- the obtained K opt (BSE / SE) is recorded, and a correction table is created (S704). Steps S702 to S704 may be executed in advance in accordance with this flow, and may be executed in advance and the obtained K opt (BSE / SE) may be recorded.
- K opt (BSE / SE) read from the correction table and the value of I def (SE) calibrated in S701, I def (BSE) in reflected electron signal detection is derived and output (S705). , S706).
- the above-described reference data and K opt (BSE / SE) can be recorded in the memory 906 of the control device 904, and the correction table is read out by the data acquisition unit 911 and I def of the arithmetic device 905.
- BSE can be derived by the correction data calculation unit 912, and the scanning deflection amount can be corrected by the deflector control unit 913 based on the derived I def (BSE) .
- magnification and the like can be adjusted using the relative value of the correction coefficient. For this reason, observation and length measurement are possible without performing calibration using a standard sample again.
- FIG. 10A is a graph showing magnification simulation data and measured value measurement data under optical conditions for detecting secondary electron signals or reflected electron signals.
- K opt (BSE / SE) can be obtained based on the approximate straight line equation of these data.
- FIG. 10B shows K opt (BSE / SE) obtained using the magnification and length measurement value, I def (SE) in secondary electron signal detection, and deflection in reflected electron signal detection obtained using these.
- It is a correction table showing the value of current I def (BSE) . In the correction table, some or all of these values may be recorded, and other optical parameters may be added according to conditions and purposes.
- FIG. 4A shows the electron beam scanning on the uneven surface of the sample and the secondary electron signal waveform processed using the signal processing device 115.
- a line profile 404 of a secondary electron signal generated from the circuit pattern 402 is obtained.
- Edge positions are detected from the obtained signals, and a length measurement value between the edge positions is calculated.
- the secondary electron signal is subjected to waveform smoothing and differentiation processing.
- there are various algorithms for detecting edge positions and obtaining dimensions but generally, a threshold method, a linear approximation method, or the like is used.
- 4B is an explanatory diagram for explaining the threshold method, and FIG.
- FIG. 4C is an explanatory diagram for explaining the linear approximation method.
- the line profile 404 is smoothed, and the distance W between the intersections 406 and 407 where the slope portions at both ends of the smoothed waveform 405 intersect with the predetermined threshold T is defined as the dimension of the circuit pattern 402.
- the threshold T is normally determined as a predetermined ratio with respect to the maximum height of the waveform.
- the slope portion at both ends is further differentiated from the smoothed waveform, and the point having the maximum slope of the smoothed waveform is determined from the extreme points of the differentiated waveform. A tangent to the point having the maximum inclination is drawn, and the distance W between the intersections 408 and 409 of each tangent and the base line is set as the dimension of the circuit pattern 402.
- FIG. 5A shows electron beam scanning on the surface of a flat or low step sample.
- the electron beam 501 scans the sample 503, and a line profile 504 of reflected electron signals generated from different circuit patterns 502 is obtained.
- a sharp peak is obtained at the pattern edge portion due to the edge effect, but in the reflected electron signal waveform 505, the waveform changes relatively slowly only by the material contrast.
- FIG. 5B is a diagram illustrating the threshold method. In such a case, the high contrast material portion is defined as a line, and the low contrast material portion is defined as a space.
- the distance W between the intersections 406 and 407 where both ends of the reflected electron signal waveform 505 intersect the threshold value T is taken as the dimension of the circuit pattern 502.
- Both a secondary electron image and a reflected electron image are acquired with respect to the pattern of the same size of the uneven sample 606 having a different material pattern as shown in FIG. 6D.
- smoothing processing of both images is performed in the same manner, and the distance W (SE) between the intersections 406 and 407 where the slopes of both ends of the secondary electron image intersect the predetermined threshold value T (SE) is defined as the dimension of the circuit pattern 402.
- the reflected electron image waveform is calculated as a value, and the dimension value is calculated from the distance W (BSE) between the intersections 506 and 507 that intersect the constant threshold value T (BSE) .
- the values of the distances W (SE) and W (BSE) are calculated for patterns of various sizes, and a correlation curve between the secondary electron image and the dimensional values of the reflected electrons is derived.
- Each curve is approximated by a linear or quadratic curve and a coefficient is calculated.
- linear approximation it is effective to divide the horizontal axis into several sections, find a linear approximation formula in the section, and obtain the average value of the obtained slopes.
- the average value up to the saturation point of the obtained approximate expression (the value obtained by dividing the integration value up to the saturation point by the integration interval) can be calculated.
- 6A to 6D will be used to describe a material design that is more suitable for obtaining the dimension measurement value in the reflected electron signal detection described in the second embodiment.
- FIG. 6A is a schematic cross-sectional view of electron beam scanning on a sample
- FIGS. 6B to 6D are cross-sectional views of samples having patterns made of various shapes and materials.
- a line profile (not shown) of secondary electron signals generated from the circuit pattern 602 is obtained by scanning the sample 603 with the electron beam 601.
- FIG. 6B in the current standard sample composed of the uneven sample 604 having the same material pattern, when the primary electron beam 601 scans the sample 603, the reflected electron image sensitive to the material contrast is equivalent to the secondary electron signal. Image quality cannot be obtained, and it is difficult to measure the length accurately. Further, as shown in FIG.
- the flat sample 605 having different material portions is composed of the material A and the material B, and a high-quality reflected electron image can be obtained. It is impossible to measure the size of the standard sample itself using optical diffraction.
- the concavo-convex sample having different material patterns is formed with concavo-convex patterns of different materials A and B, so that a high-quality reflected electron image can be obtained and its own dimension measurement can be performed. Can also be done.
- an accurate correction coefficient can be obtained not by simulating an optical system but also by directly measuring the sample. Can be derived.
- the apparatus can be adjusted for magnification and length measurement calibration even under optical conditions for detecting reflected electron signals.
- Electron gun 101 Primary electron beam 103 Accelerating electrode 104 Condenser lens 105,306 Deflector 106,307 Objective lens 107,302,403,503,603 Sample 108 Sample holder 109 Sample stage 110 Booster electrode 111 Reflected electron 112 Secondary electron 113 Reflector 114, 902 Detector 115 Signal processor 116 Image display unit 117 Conversion electrode 201, 205 Substrate 202, 203, 206, 207, 402, 502, 602 Circuit pattern 204 Chromium (Cr) film 208 Diamond-like carbon 301, 401 , 501, 601 Electron beam 303 Formed image 304 Objective aperture hole 305 Condenser lens 404, 504 Line profile 405 Smoothed secondary electron signal waveform 406, 407 In the threshold method 408, 409 Intersection of each tangent and base line in the linear approximation method 505 Reflected electron signal waveform 506, 507 Intersection of both ends of waveform in
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Abstract
Description
本発明の他の目的、特徴及び利点は添付図面に関する以下の本発明の実施例の記載から明らかになるであろう。
と定義される。例えば試料302上の偏向幅を1μm、画像の表示幅を100mmとするとき、倍率は10万倍となる。図3Cに、SEMの電子光学系におけるレンズ、偏向器、走査コイル等の位置関係を示す。電子線301は対物絞り穴304を通過後、コンデンサレンズ305に収束され、試料302上にて走査される。このとき、対物レンズ307の上に設けられた偏向器306に一定な電場または磁場を加えることにより、電子線を試料面上にて一定幅で走査偏向するよう調整する。試料面の偏向幅L、倍率Mと一次電子線の加速電圧Va、偏向器に加える偏向電流量Idefとの相関関係は下記のように示される。
Va:一次電子線の加速電圧
Kelc:倍率に関する偏向器の電気特性補正係数(例:回路特性係数、A/D変換制御係数など)
Kopt:倍率に関する電子光学系特性補正係数
ここで、Koptは電子光学系に影響する加速電圧Va、また式(2)には示さないがその他の試料上に照射される電子線のエネルギーに作用する光学的パラメータの関数である。
上記記載は実施例についてなされたが、本発明はそれに限らず、本発明の精神と添付の請求の範囲の範囲内で種々の変更および修正をすることができることは当業者に明らかである。
102 一次電子線
103 加速電極
104 コンデンサレンズ
105、306 偏向器
106、307 対物レンズ
107、302、403、503、603 試料
108 試料ホルダー
109 試料ステージ
110 ブースター電極
111 反射電子
112 二次電子
113 反射板
114、902 検出器
115 信号処理装置
116 画像表示部
117 変換電極
201、205 基板
202、203、206、207、402、502、602 回路パターン
204 クロム(Cr)膜
208 ダイヤモンドライクカーボン
301、401、501、601 電子線
303 形成画像
304 対物絞り穴
305 コンデンサレンズ
404、504 ラインプロファイル
405 平滑化後の二次電子信号波形
406、407 閾値法における波形両端のスロープ部分と閾値Tとの交点
408、409 直線近似法における各接線とベースラインとの交点
505 反射電子信号波形
506、507 閾値法における波形両端と閾値Tとの交点
604 同一材質パターンを有する凹凸試料
605 異種材質部分を有する平坦試料
606 異種材質パターンを有する凹凸試料
801a シールドメッシュ
801b フィルタメッシュ
802 開口
803 電源
804a 反射電子検出器
804b 二次電子検出器
901 SEM本体
903 A/D変換器
904 制御装置
905 演算装置
906 メモリ
907 入力装置
908 評価条件設定部
909 測定条件設定部
910 画像形成部
911 データ取得部
912 補正データ演算部
913 偏向器制御部
Claims (12)
- 荷電粒子線を放出する荷電粒子源と、
前記荷電粒子線を加速する加速電極と、
前記荷電粒子線を走査偏向する偏向器と、
前記荷電粒子線を収束する対物レンズと、
試料を搭載する試料ステージと、
前記試料から発生した荷電粒子を検出する荷電粒子検出器と、
前記検出器よりも試料側に位置し、正、或いは負の電圧が印加される電極と、
前記偏向器に信号を供給する制御コンピュータを備えた荷電粒子線装置において、
前記制御コンピュータは、
前記電極に印加する電圧を制御し、
二次荷電粒子を検出する第1の検出条件と、
反射荷電粒子を検出条件する第2の検出条件との間で、
前記荷電粒子線の走査偏向量を補正するように前記偏向器に信号を供給することを特徴とする荷電粒子線装置。 - 請求項1において、
前記制御コンピュータは、
前記電極に正の電圧を印加する前記第1の検出条件から、
前記電極に負の電圧を印加する前記第2の検出条件へ切り替えるように前記電極に与える電圧を制御することを特徴とする荷電粒子線装置。 - 請求項1において、
前記制御コンピュータは、
前記荷電粒子線を走査偏向する補正係数を求める演算部と、
当該演算部により求めた補正係数を記録する記録部を備えていることを特徴とする荷電粒子線装置。 - 請求項3において、
前記補正係数は、
予め取得した参照データに基づいて求められることを特徴とする荷電粒子線装置。 - 請求項3において、
前記補正係数は、
予め取得した、前記第1の検出条件と前記第2の検出条件における、倍率に関する値の相対関係を示すことを特徴とする荷電粒子線装置。 - 請求項5において、
前記倍率に関する値は、
光学的なシミュレーションにより求められることを特徴とする荷電粒子線装置。 - 請求項3において、
前記補正係数は、
予め取得した、前記第1の検出条件と前記第2の検出条件における、前記試料の寸法値に関する相対関係を示すことを特徴とする荷電粒子線装置。 - 荷電粒子線を放出する荷電粒子源と、
前記荷電粒子線を加速する加速電極と、
前記荷電粒子線の走査偏向量を制御する偏向器と、
前記荷電粒子線を収束する対物レンズと、を備えた電子光学系と、
前記試料から発生する荷電粒子を検出する電子検出系と、
前記偏向器に信号を供給する制御コンピュータを備えた荷電粒子線装置において、
前記制御コンピュータは、
前記電子光学系を制御し、
前記試料から発生する二次荷電粒子を検出する第1の光学条件において既知の寸法を有する標準試料を用いた走査偏向量を調整し、
予め取得した、二次荷電粒子を検出する所定の光学条件と、反射荷電粒子を検出する所定の光学条件における倍率の値から、
両光学条件における倍率に関する相対的な補正係数を求め、
当該標準試料を用いて走査偏向量を調整したときに前記偏向器に与える第1の信号と、
前記補正係数に基づいて、
前記第1の光学条件から、
前記試料から発生する反射電子を検出する第2の光学条件に変化させたときに前記偏向器に与える第2の信号を導出することを特徴とする荷電粒子線装置。 - 請求項8において、
前記制御コンピュータは、
前記第1の信号と、
前記二次電子を検出する所定の光学条件における倍率と、
前記反射電子を検出する所定の光学条件における倍率を記録する記録部と、
前記補正係数を求める演算部と、を備え、
前記記録部は、
当該演算部により求めた補正係数を記録することを特徴とする荷電粒子線装置。 - 請求項9において、
前記演算部は、
前記第2の信号を導出することを特徴とする荷電粒子線装置。 - 試料に荷電粒子線を照射し、
偏向器に信号を与えて前記荷電粒子線を走査偏向する荷電粒子線の走査偏向方法において、
前記試料から発生する二次荷電粒子を検出する第1の光学条件において既知の寸法を有する標準試料を用いて走査偏向量を調整する第1の工程と、
予め取得した、二次荷電粒子を検出する所定の光学条件と、反射電子を検出する所定の光学条件における倍率の値から、
両光学条件における倍率に関する相対的な補正係数を求める第2の工程と、
当該標準試料を用いて走査偏向量を調整したときに前記偏向器に与える第1の信号と、前記補正係数に基づいて、前記試料から発生する反射電子を検出する第2の光学条件において前記偏向器に与える第2の信号を導出する第3の工程と、
を有することを特徴とする荷電粒子線の走査偏向方法。 - ネットワーク経由、もしくは外部接続型のメモリ経由で、走査型電子顕微鏡や、計算器からの画像データや、設計データを受信可能な計算機と、
パターンマッチング、パターン測定を行うためのパラメータ等を入力する入力手段と、
前記走査電子顕微鏡からの画像データや、パターンマッチング、パターン測定結果を表示する表示手段を備え、請求項1に記載の制御コンピュータの機能をソフトウェア処理で行うことを特徴としたプログラム。
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