WO2013019399A3 - Method for producing a monocrystalline product - Google Patents

Method for producing a monocrystalline product Download PDF

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Publication number
WO2013019399A3
WO2013019399A3 PCT/US2012/047057 US2012047057W WO2013019399A3 WO 2013019399 A3 WO2013019399 A3 WO 2013019399A3 US 2012047057 W US2012047057 W US 2012047057W WO 2013019399 A3 WO2013019399 A3 WO 2013019399A3
Authority
WO
WIPO (PCT)
Prior art keywords
producing
monocrystalline
crystalline material
product
monocrystalline product
Prior art date
Application number
PCT/US2012/047057
Other languages
French (fr)
Other versions
WO2013019399A2 (en
Inventor
Ning Duanmu
Scott J. TURCHETTI
Original Assignee
Gtat Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gtat Corporation filed Critical Gtat Corporation
Publication of WO2013019399A2 publication Critical patent/WO2013019399A2/en
Publication of WO2013019399A3 publication Critical patent/WO2013019399A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

A method of producing a monocrystalline product having a target size is disclosed. The method comprises the step of producing a first crystalline material in the hot zone of a crystal growth apparatus using a first crucible, wherein the first crystalline material has an interior monocrystalline portion that is too small to remove the desired monocrystalline product, and subsequently producing a second crystalline material in the hot zone of the same crystal growth apparatus using a second crucible having defined dimensions. The resulting second crystalline material has a larger interior monocrystalline portion from which the desired monocrystalline product can be removed.
PCT/US2012/047057 2011-08-04 2012-07-17 Method for producing a monocrystalline product WO2013019399A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161515124P 2011-08-04 2011-08-04
US61/515,124 2011-08-04

Publications (2)

Publication Number Publication Date
WO2013019399A2 WO2013019399A2 (en) 2013-02-07
WO2013019399A3 true WO2013019399A3 (en) 2013-06-06

Family

ID=47629840

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/047057 WO2013019399A2 (en) 2011-08-04 2012-07-17 Method for producing a monocrystalline product

Country Status (1)

Country Link
WO (1) WO2013019399A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6743293B2 (en) * 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
US6969502B2 (en) * 2000-03-03 2005-11-29 Schott Glas Method and device for growing large-volume oriented monocrystals
US20090158993A1 (en) * 2007-12-19 2009-06-25 Uwe Sahr Method for producing a monocrystalline or polycrystalline semiconductore material
KR20100136253A (en) * 2009-06-18 2010-12-28 김영조 Crucible for manufacturing silicon ingot with detachable crucible

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6969502B2 (en) * 2000-03-03 2005-11-29 Schott Glas Method and device for growing large-volume oriented monocrystals
US6743293B2 (en) * 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
US20090158993A1 (en) * 2007-12-19 2009-06-25 Uwe Sahr Method for producing a monocrystalline or polycrystalline semiconductore material
KR20100136253A (en) * 2009-06-18 2010-12-28 김영조 Crucible for manufacturing silicon ingot with detachable crucible

Also Published As

Publication number Publication date
WO2013019399A2 (en) 2013-02-07

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