WO2013010509A1 - 一种少液滴电弧靶及带少液滴电弧靶的等离子涂层*** - Google Patents

一种少液滴电弧靶及带少液滴电弧靶的等离子涂层*** Download PDF

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Publication number
WO2013010509A1
WO2013010509A1 PCT/CN2012/078986 CN2012078986W WO2013010509A1 WO 2013010509 A1 WO2013010509 A1 WO 2013010509A1 CN 2012078986 W CN2012078986 W CN 2012078986W WO 2013010509 A1 WO2013010509 A1 WO 2013010509A1
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Prior art keywords
target
arc
vacuum chamber
water
cooling
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PCT/CN2012/078986
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English (en)
French (fr)
Inventor
董小虹
张中弦
梁航
黄拿灿
哥罗沃依•亚历山大
Original Assignee
广东世创金属科技有限公司
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Publication of WO2013010509A1 publication Critical patent/WO2013010509A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • Plasma spraying system with less droplet arc target and arc droplet target with less droplets
  • the present invention relates to a low droplet arc target and a plasma coating system with a low droplet arc target. It belongs to the field of vacuum arc ion plating technology.
  • Arc ion plating technology because of the simple structure of the device, the cathode target is both the evaporation source of the cathode material and the ion source; the ionization rate is high (generally up to 60% ⁇ 80%), the deposition rate is high; the incident ion energy is large, With high film/base bonding strength and good coating quality, it has a wide application range and strong practicability.
  • As a hard film coating method it has been widely used in tools and various tooling.
  • arc ion plating system there are large particles (micropart icles) contamination in the coating, which makes the surface of the coating rough, the porosity increases, and the coating performance is unstable, which restricts to some extent.
  • Ion plating technology when depositing, when the surface of the cathode target is ignited by an external circuit to generate an arc, the temperature of the ignition target of the cathode target is increased, a large amount of electrons are emitted into the space, and a certain proportion of the metal atoms of the target are evaporated.
  • the inelastic collision of the hot electrons with these metal atoms ionizes them into positive ions, and the positive ions accumulate in front of the arc spots to form an ion cloud, because the ion cloud is close to the surface of the cathode (about 10 microns), and the ion cloud is at the cathode.
  • the potential is high and a strong electric field is formed on the surface of the cathode.
  • This electric field has a strong drag effect on electrons inside the metal surface, producing strong field electron emission, generating a stable high current density, high energy density electron flow.
  • the high energy density electron flow causes the cathode arc spot to locally heat up rapidly and form a micro-melting pool, which generates a large amount of metal material entrapped in the droplets.
  • the metal vapor stream is in front of the cathode and is inelastically collided by the high-speed electron flow, and the metal vapor is ionized again. It is a high-energy positive ion, which in turn enhances the field emission effect.
  • Such a thermal field emission mechanism is repeated to maintain the arc target discharge, and a high ionization rate, high energy cathode target material plasma stream is emitted at the cathode target.
  • the field emission electron flow is first broken at a portion where the cathode surface is protruded or where the work function is low, and an arc spot is formed.
  • a burn pit is formed in the arc spot due to vaporization of the cathode material, so that the conditional change of the field-emitting electrons disappears, and a second field emission arc is formed at another position.
  • the arc spot is not fixed and it migrates rapidly on the surface of the cathode. The morphology of ion-coated particles has been carefully observed by many researchers.
  • the particles are molten materials of the cathode target, formed by droplets ejected from the micro-melting pool of the cathode arc spot, are spherical in space, and become flat when solidified on the surface of the substrate, and are often goose-like or spherical particles. They vary in size from a few micrometers to a few dozen micrometers, and individual tens of micrometers. Since the particles are produced by the melting of the cathode target, it is necessarily related to the temperature of the melting, and the higher the melting temperature, the larger the particles produced.
  • the arc spot after the arcing of the conventional cathode target generally exhibits an irregular free motion, and the moving speed is slow, which causes the arc spot to stay at a certain point on the surface of the cathode target for a long time, and the target surface is melted at that point.
  • the temperature is higher, so the more the particles are.
  • the arc evaporation source in the prior art has the disadvantages of large metal particles, poor quality of deposited film layers, low utilization of targets, complicated structure, troublesome installation adjustment, and poor cooling effect. Summary of the invention
  • the first object of the present invention is to solve the problem that the vacuum arc ion plating apparatus in the prior art has large metal particles obtained by evaporation, poor quality of the deposited film layer, low utilization rate of the target material, complicated structure, and troublesome installation adjustment.
  • the disadvantage of poor cooling effect is to provide a low-drop arc target, which can significantly reduce the generation of large droplets of arc ion plating, and uniformly ablate the surface of the cathode target, thereby effectively improving the utilization efficiency of the target.
  • a second object of the present invention is to provide a plasma coating system with a small droplet arc target, which has the advantages of simple and reasonable structure, convenient installation and adjustment, and good cooling effect.
  • a droplet-free arc target characterized by: comprising a cathode target, a water-cooled seat on a back surface of the cathode target, and a cooling water pipe extending from a water inlet of the water-cooling seat, in a cavity of the water-cooled seat or a surface of the cooling water pipe a permanent magnet electromagnetic element is arranged, a large electromagnetic coil is arranged on the back side of the permanent magnet electromagnetic element, a programmable DC power supply is connected to the large electromagnetic coil; an arc current source is connected to the cooling water pipe; and the large electromagnetic coil is sleeved on the cooling water pipe;
  • the polarity of the magnetic field generated by the large electromagnetic coil is opposite to the polarity of the permanent magnet electromagnetic element, and a superimposed magnetic field generated by both the permanent magnet electromagnetic element and the large electromagnetic coil is formed on the surface of the cathode target, the superimposed magnetic field strength accompanying the large electromagnetic coil
  • the radius of motion of the cathodic arc spot of the catho
  • a first object of the present invention can also be attained by the following technical solution:
  • a technical improvement to achieve the first object of the present invention is: forming a superposition of both the permanent magnet electromagnetic element and the large electromagnetic coil on the surface of the cathode target
  • the permanent magnet electromagnetic element is composed of a permanent magnet or a small electromagnetic coil.
  • a plasma coating system with a small droplet arc target which is characterized by:
  • the cathode target and the water-cooled seat of the small-drop arc target are located in the inner cavity of the vacuum chamber, the large electromagnetic coil of the droplet-off-arc target, the programmable DC power source, the arc current source and the water from the water-cooled seat
  • the cooling water pipe extending from the mouth is located outside the vacuum chamber, and the permanent magnet electromagnetic component of the small droplet arc target is located in the inner cavity or the outer side of the vacuum chamber; the permanent magnet electromagnetic component is composed of a permanent magnet or a small electromagnetic coil;
  • the working turntable is disposed in the inner cavity of the vacuum chamber, and the power input end of the working turntable is connected to the output end of the bias power source; the air extracting port of the vacuum pumping group is connected to the inner cavity of the vacuum chamber, and the process gas is connected to the air inlet of the vacuum chamber.
  • a second object of the present invention can also be achieved by adopting the following technical solution:
  • a technical improvement to achieve the second object of the present invention is: the water-cooled seat includes a target seat water jacket, and is connected to the inner cavity of the target seat water jacket Cooling water pipe; the target water jacket is installed in the vacuum chamber, the cooling water pipe extends outward through the side wall of the vacuum chamber, and communicates with the external cooling water, the cooling water pipe is connected with the arc current source; the cathode target is fixed at the target seat The right end of the water jacket is open; the permanent magnet is installed in the inner cavity of the water jacket of the target seat in the vacuum chamber; or the permanent magnet or the small electromagnetic coil is installed on the cooling water pipe located outside the vacuum chamber.
  • a technical improvement to achieve the second object of the present invention is: the inner cavity of the target seat water jacket is divided into a front water cooling chamber and a rear water cooling chamber that communicate with each other; the target seat water jacket passes through the target mounting flange and the vacuum chamber side
  • the interface flange on the wall is sealed and fixedly connected;
  • the cooling water pipe is composed of an inlet pipe and an outlet pipe; one end of the inlet pipe is connected with the front water cooling cavity, and the other end is connected to the external cooling water pipe through the side wall of the vacuum chamber, and one end of the outlet pipe It is connected to the rear water cooling chamber, and the other end is connected to the external cooling water pipe through the side wall of the vacuum chamber.
  • a technical improvement to achieve the second object of the present invention is to provide a terminal for connection to an arc current source on the inlet or outlet pipe.
  • a technical improvement to achieve the second object of the present invention is: a shielding cover is provided on the side of the target water jacket on the cathode target.
  • a technical improvement to achieve the second object of the present invention is:
  • the magnet is mounted in the front cold water chamber of the target seat water jacket by means of a adjusting screw.
  • the small droplet arc target according to the present invention can accelerate the movement speed of the arc spot by installing a group of magnets or small electromagnetic coils behind the cathode target, and significantly reduce the generation of large droplets of arc ion plating; Behind the electromagnetic coil, a large electromagnetic coil is installed, and a special cyclically varying direct current is added to the electromagnetic coil through a programmable direct current power source. The polarity of the magnetic field generated is opposite to the polarity of the magnet, and the current can be changed by the coil cycle.
  • the radius of the arched magnetic field generated by the magnet changes periodically, so that the moving speed of the arc spot on the surface of the cathode target is accelerated, the generation of large droplets of arc ion plating is significantly reduced, and the surface of the cathode target is uniformly ablated, making full use of Target.
  • the target water jacket of the present invention comprises a front water cooling chamber and a rear water cooling chamber, and the inlet pipe and the outlet pipe of the target water jacket are connected to the external cooling water pipe through the side wall of the vacuum chamber; Mounted on the inlet pipe outside the vacuum chamber, the magnet or small electromagnetic coil can be installed in the rear water cooling chamber of the target seat water jacket located in the vacuum chamber as needed, or installed on the cooling water pipe located outside the vacuum chamber. Therefore, the invention has the advantages of simple and reasonable structure, convenient installation and adjustment, and good cooling effect.
  • the axial position of the magnet can be adjusted by adjusting the screw so that the radius of motion of the cathode arc spot is in an appropriate range. With the cathode target of the present invention, the surface thereof can be uniformly ablated, and the utilization rate is high.
  • FIG. 1 is a schematic view showing the structure of a plasma coating system with a small droplet arc target according to a first embodiment of the present invention.
  • Fig. 2 is a schematic view showing the structure of a small droplet arc target according to a first embodiment of the present invention.
  • Fig. 3 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a second embodiment of the present invention.
  • Fig. 4 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a third embodiment of the present invention.
  • Fig. 5 is a schematic view showing the structure of a plasma coating system with a small droplet arc according to a fourth embodiment of the present invention.
  • the cathode target 6 of the small droplet arc target and the water-cooling seat 5 are located in the inner cavity of the vacuum chamber 1, the large electromagnetic coil 10 of the droplet arc target, the programmable DC power source 1 1, the arc current source 12 and the water-cooling seat
  • the cooling water pipe extending from the water inlet of the 5 is located outside the vacuum chamber, and the electromagnetic component of the small droplet arc target is located in the inner cavity or the outer side of the vacuum chamber 1;
  • the working turntable 4 is disposed in the inner cavity of the vacuum chamber 1, and the power input end of the working turntable 4 is connected to the output end of the bias power supply 1 1; the exhaust opening of the vacuum pump set 2 is connected to the inner cavity of the vacuum chamber 1, and the process gas 15 is connected to the vacuum.
  • a small droplet arc target includes a cathode target 6, a water cooling seat 5 is disposed on the back surface of the cathode target 6, and a cooling water pipe is extended from the water inlet of the water cooling seat 5,
  • the inner surface of the water cooling seat 5 or the surface of the cooling water pipe is provided with an electromagnetic element, and a large electromagnetic coil 10 is disposed on the back surface of the electromagnetic element, and the large electromagnetic coil 10 is connected with a programmable DC power source 1 1; the cooling water pipe is connected with an arc current source 1 2 ;
  • Large electromagnetic coil 10 is sleeved in cold However, the polarity of the magnetic field generated by the large electromagnetic coil 10 and the polarity of the electromagnetic element must be opposite, and a superimposed magnetic field generated by both the electromagnetic element and the large electromagnetic coil is formed on the surface of the cathode target 6, and the magnetic field strength is accompanied by a large electromagnetic field.
  • the current of the coil 10 changes with a periodic change, and the radius of motion of the
  • a superimposed magnetic field generated by both the electromagnetic element and the large electromagnetic coil 10 is formed on the surface of the cathode target 6, and the superimposed magnetic field is an arc-shaped bending magnetic field B, which is composed of a parallel magnetic field B1 and a vertical magnetic field B2 with respect to the cathode target surface.
  • the electromagnetic element is composed of a permanent magnet 8.
  • the water cooling seat 5 includes a target water jacket 5-1, a cooling water pipe 5-2 communicating with the inner cavity of the target water jacket 5-1, and a target water jacket 5-1 installed in the vacuum chamber 1, the cooling water pipe 5 -2 extends outward through the side wall of the vacuum chamber 1 and communicates with an external cooling water port, the cooling water pipe 5-2 is connected to the arc current source 12; the cathode target 6 is fixed to the right end opening of the target water jacket 5-1 The magnet 8 is mounted in the inner cavity of the target holder water jacket 5-1 located in the vacuum chamber 1.
  • the inner cavity of the target water jacket 5-1 is divided into a front water cooling chamber 5-1-1 and a rear water cooling chamber 5-1-2 which are in communication with each other; the target water jacket 5-1 passes through the target mounting flange 5-3 Sealed and fixedly connected to the interface flange on the side wall of the vacuum chamber 1; the cooling water pipe 5-2 is composed of the inlet pipe 5-2-1 and the outlet pipe 5-2-2; one end of the inlet pipe 5-2-1 is cooled with the front water
  • the cavity 5-1-1 is connected, and the other end thereof is connected to the external cooling water pipe through the side wall of the vacuum chamber 1.
  • the one end of the outlet pipe 5-2-2 is connected to the rear water cooling chamber 5-1-2, and the other end thereof passes through.
  • the side wall of the vacuum chamber 1 is connected to an external cooling water pipe.
  • a terminal 13 connected to the arc current source 12 is provided on the outlet pipe 5-2-2.
  • a shield cover 5-4 is provided on the side of the target water jacket 5-1 on the cathode target 6. It is possible to limit the movement of the arc spot on the surface of the cathode target to the side.
  • the magnet 8 is mounted in the rear cold water chamber 5-1-2 of the target holder water jacket 5-1 by an adjusting screw 5-5.
  • the axial position of the magnet can be adjusted by adjusting the screw so that the radius of motion of the cathode arc spot is in an appropriate range.
  • the cooling water directly reaches the front water cooling chamber from the inlet pipe to cool the back surface of the cathode target, and then enters the rear water cooling chamber to cool the magnet, and then discharges through the outlet pipe.
  • the arc power is connected to the arc power terminal, and the arc current passes.
  • the outlet pipe, the rear water-cooling chamber casing, and the front water-cooling chamber are transferred to the cathode target, and the arc spot is ignited by the arcing electrode on the side of the cathode target.
  • the present invention installs a special array of magnets behind the cathode target, and an arc-shaped bending magnetic field B is generated on the surface of the cathode target by the magnet, and the arc-shaped bending magnetic field is opposite to Parallel magnetic field B1 and perpendicular magnetic field of the cathode target surface
  • the axial position of the magnet can be adjusted to make the radius of motion of the cathode arc spot in an appropriate range.
  • the radius of motion of the cathodic arc spot Under the action of the horizontal magnetic field B1, the radius of motion of the cathodic arc spot can only be fixed, so that the ablation of the cathode target will be uneven, which affects the utilization of the cathode target.
  • the invention is provided with an electromagnetic coil behind the magnet, and a special cyclically varying DC current is added to the electromagnetic coil through the programmable DC power source, and the polarity of the magnetic field generated and the polarity of the magnet must be On the contrary, the magnetic field on the surface of the cathode target will be superimposed by the magnetic field generated by both the magnet and the electromagnetic coil. The strength of the magnetic field will also change with the current cycle of the electromagnetic coil, and the radius of motion of the cathodic arc spot will also change periodically. . Therefore, with the cathode target of the present invention, the surface thereof can be uniformly ablated, and the utilization rate is high.
  • the electromagnetic element is composed of a permanent magnet 8.
  • the permanent magnet 8 is mounted on an inlet pipe 5-2-1 located outside the vacuum chamber 1. Others are the same as in the specific embodiment 1.
  • the electromagnetic element is composed of a small electromagnetic coil 9 which is mounted in the rear cold water chamber 5-1-2 of the target holder water jacket 5-1 located in the vacuum chamber 1. Others are the same as in the specific embodiment 1.
  • the electromagnetic element is constituted by a small electromagnetic coil 9, and the small electromagnetic coil 9 is mounted on an inlet pipe 5-2-1 located outside the vacuum chamber 1. Others are the same as in the specific embodiment 1.

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Abstract

本发明涉及一种少液滴电弧靶及带少液滴电弧靶的等离子涂层***；由少液滴电弧靶、真空室、真空泵组、工作转盘、工艺气体和偏压电源构成；少液滴电弧靶的阴极靶和有水冷座位于真空室的内腔，少液滴电弧靶的大电磁线圈、可编程直流电源、弧电流源及从水冷座的入水口处延伸出的冷却水管位于真空室外侧，少液滴电弧靶的电磁元件位于真空室的内腔或外侧。本发明通过线圈周期变化电流可以改变由磁铁产生的拱形磁场半径，并呈现周期性变化，从而使得阴极靶表面的弧斑的运动速度加快，显著减少电弧离子镀大液滴的产生，并且使阴极靶表面均匀地烧蚀，充分利用靶材。同时具有结构简单合理，安装调节方便、冷却效果好的特点。

Description

一种少液滴电弧靶及带少液滴电弧靶的等离子涂层*** 技术领域
本发明涉及一种少液滴电弧靶及带少液滴电弧靶的等离子涂层 ***。 属于真空电弧离子镀技术领域。
背景技术
电弧离子镀技术， 由于具有设备结构较简单， 阴极靶既是阴极材 料的蒸发源， 又是离子源； 离化率高 （一般可达 60 %〜80 % )， 沉积 速率高； 入射离子能量大， 膜 /基结合力高， 涂层质量好等优点， 因 而应用面广， 实用性强， 作为硬质膜涂层手段， 在刀具和各种工模具 上已获得愈来愈广泛的应用。 然而， 现有技术电弧离子镀***， 涂层 中存在大颗粒 ( macropart i c l e s , mi cro drop l e t s ) 污染， 使涂层表 面粗糙， 孔隙率增加， 涂层性能不稳定， 这在一定程度上制约了电弧 离子镀硬质涂层在精密工模具和高档零件上的应用。
离子镀技术， 在沉积时， 当阴极靶表面间被外部电路点燃火花产 生电弧， 使阴极靶点燃区温度升高， 向空间发射大量电子， 同时也有 一定比例的靶材金属原子蒸发。热电子与这些金属原子非弹性碰撞使 之电离成正离子， 在靠近弧斑的前方产生正离子堆积形成了离子云， 由于离子云距阴极表面很近 （约 10微米）， 且离子云处对阴极的电位 很高， 在阴极表面形成很强的电场。 此电场对金属表面内部的电子有 强烈的拖拉作用，产生强烈的场致电子发射，生成稳定的高电流密度， 高能量密度的电子流。高能量密度电子流促使阴极弧斑局部快速升温 并形成微熔池， 产生夹杂微液滴的大量金属材料蒸发， 金属蒸汽流在 阴极前方又受到高速电子流的非弹性碰撞， 金属蒸汽又被电离为高能 量的正离子， 这又更增强场致发射作用。 如此热场致发射机制反复进 行， 使阴极靶维持弧光放电， 在阴极靶发射出高离化率， 高能量的阴 极靶材料的等离子体流束。 一般而言， 首先在阴极表面突出处或逸出 功低的部位击穿发射场致发射电子流， 形成弧斑。 在弧斑区由于阴 极材料汽化而形成灼坑， 于是该处场致发射电子的条件改变活消失， 则在另一个位置形成第二个场致发射电弧。 电弧弧斑不是固定的， 它 在阴极表面迅速的迁移。 对离子镀涂层颗粒的形貌， 已有不少研究者 进行过仔细的观察。 一般认为， 颗粒是阴极靶熔融的物料， 从阴极弧 斑微熔池喷射出来的液滴所形成， 在空间呈球状， 固化在基材表面时 变得扁平， 常呈鹅卵状或球状颗粒。 其大小不等， 尺度从零点几微米 到十几微米， 个别的达几十微米。 既然颗粒是阴极靶熔融所产生， 那 必然与熔融的温度有关， 熔融的温度越高， 产生的颗粒就越多越大。 传统的阴极靶起弧后的弧斑一般是呈现不规则的***，运动速度 较慢， 导致弧斑停留在阴极靶表面某一点的时间较长， 靶面该点熔融 的温度较高， 因此颗粒就越多越大。
现有技术中的电弧蒸发源存在金属颗粒大、 沉积膜层质量差、 对 靶材的利用率较低以及结构复杂、安装调节麻烦、冷却效果差的缺点。 发明内容
本发明的第一个目的， 是为了解决现有技术中的真空电弧离子镀 设备存在蒸发获得的金属颗粒大、 沉积膜层质量差、 对靶材的利用率 较低以及结构复杂、 安装调节麻烦、 冷却效果差的缺点， 提供一种少 液滴电弧靶， 它能够显著减少电弧离子镀大液滴的产生， 并且使阴极 靶表面均匀地烧蚀， 有效提高靶材的利用效率。
本发明的第二个目的， 是为了提供一种带少液滴电弧靶的等离子 涂层***， 具有结构简单合理， 安装调节方便、 冷却效果好的特点。
本发明的第一个目的可以通过采取如下技术方案达到：
一种少液滴电弧靶， 其特征是： 包括阴极靶， 在阴极靶的背面设 有水冷座， 从水冷座的入水口处延伸出一段冷却水管， 在水冷座的内 腔或冷却水管的表面设有永磁体电磁元件，在所述永磁体电磁元件的 背面设有大电磁线圈， 大电磁线圈连接有可编程直流电源； 冷却水管 连接有弧电流源； 大电磁线圈套接在冷却水管上； 大电磁线圈产生的 磁场极性与所述永磁体电磁元件的极性相反，在阴极靶表面形成由永 磁体电磁元件与大电磁线圈两者产生的叠加磁场， 该叠加磁场强度随 大电磁线圈的电流周期变化而变化， 阴极靶的阴极弧斑的运动半径随 之而周期变化。
本发明的第一个目的还可以通过采取如下技术方案达到： 实现本发明第一个目的的一种技术改进方案是： 在阴极靶表面形 成由永磁体电磁元件与大电磁线圈两者产生的叠加磁场， 叠加磁场为 拱形弯曲磁场 B， 该拱形弯曲磁场 B 由相对于阴极靶面的平行磁场 B 1 和垂直磁场 B2两个分量叠加而成， gp : B = B 1 + B 2。
实现本发明第一个目的的一种技术改进方案是： 永磁体电磁元件 由永久磁铁或小电磁线圈构成。
本发明的第二个目的可以通过采取如下技术方案达到：
一种带少液滴电弧靶的等离子涂层***， 其特征是：
1 ) 由少液滴电弧靶、 真空室、 真空泵组、 工作转盘、 工艺气体 和偏压电源构成；
2 ) 少液滴电弧靶的阴极靶和水冷座位于真空室的内腔， 少液滴 电弧靶的大电磁线圈、 可编程直流电源、 弧电流源及从水冷座的入水 口处延伸出的冷却水管位于真空室外侧， 少液滴电弧靶的永磁体电磁 元件位于真空室的内腔或外侧； 永磁体电磁元件由永久磁铁或小电磁 线圈构成；
3 ) 工作转盘设置在真空室的内腔， 工作转盘的电源输入端连接 偏压电源的输出端； 真空泵组的抽风口连通真空室的内腔， 工艺气体 连通真空室的进气口。
本发明的第二个目的还可以通过采取如下技术方案达到： 实现本发明第二个目的的一种技术改进方案是： 所述水冷座包括 靶座水套、 与靶座水套的内腔连通的冷却水管； 靶座水套安装在真空 室中， 冷却水管穿过真空室的侧壁向外伸出、 并与外部冷却水接口连 通，冷却水管与弧电流源连接；阴极靶固定在靶座水套的右端开口处； 永久磁铁安装在位于真空室内的靶座水套的内腔中； 或者是永久磁铁 或小电磁线圈安装在位于真空室外的冷却水管上。
实现本发明第二个目的的一种技术改进方案是： 靶座水套的内腔 分隔成相互连通的前水冷腔和后水冷腔； 靶座水套的通过靶体安装法 兰与真空室侧壁上的接口法兰密封固定连接； 冷却水管由进水管和出 水管构成； 进水管的一端与前水冷腔连通、 其另一端穿过真空室侧壁 与外部冷却水管接口连接， 出水管的一端与后水冷腔连通、 其另一端 穿过真空室侧壁与外部冷却水管接口连接。
实现本发明第二个目的的一种技术改进方案是： 在进水管或出水 管上设有与弧电流源连接的接线端子。
实现本发明第二个目的的一种技术改进方案是： 靶座水套上位于 阴极靶的侧面设有屏蔽罩。
实现本发明第二个目的的一种技术改进方案是： 所述磁铁通过调 节螺丝安装在靶座水套的前冷水腔中。
本发明的有益效果：
1、 本发明所述的少液滴电弧靶通过在阴极靶后面安装一组磁铁 或小电磁线圈， 能够加快弧斑的运动速度， 显著减少电弧离子镀大液 滴的产生；通过在磁铁或小电磁线圈的后面，再安装一个大电磁线圈， 通过可编程直流电源在电磁线圈上加入特殊周期变化的直流电流， 其 产生的磁场极性与磁铁的极性相反，通过线圈周期变化电流可以改变 由磁铁产生的拱形磁场半径， 并呈现周期性变化， 从而使得阴极靶表 面的弧斑的运动速度加快， 显著减少电弧离子镀大液滴的产生， 并且 使阴极靶表面均匀地烧蚀， 充分利用靶材。
2、 本发明的靶座水套包括前水冷腔和后水冷腔， 靶座水套的进 水管和出水管穿过真空室的侧壁与外部冷却水管连接； 大电磁线圈安 装在真空室外面的进水管上，磁铁或小电磁线圈可以根据需要选择安 装在位于真空室内的靶座水套的后水冷腔中， 或者是安装在位于真空 室外面的冷却水管上。 因此， 本发明具有结构简单合理， 安装调节方 便、 冷却效果好的优点。 同时， 可以通过调节螺丝来调整磁铁的轴向 位置， 使阴极弧斑的运动半径在合适的范围。 通过本发明的阴极靶， 其表面可以很均匀烧蚀， 利用率很高。
附图说明
图 1是本发明具体实施例 1所述的带少液滴电弧靶的等离子涂层 ***的结构示意图。
图 2是本发明具体实施例 1所述的少液滴电弧靶的结构示意图。 图 3是本发明具体实施例 2所述带少液滴电弧等离子涂层***的 结构示意图。
图 4是本发明具体实施例 3所述带少液滴电弧等离子涂层***的 结构示意图。
图 5是本发明具体实施例 4所述带少液滴电弧等离子涂层***的 结构示意图。
具体实施方式
具体实施例 1 :
参照图 1， 本实施例所述的一种带少液滴电弧靶的等离子涂层系 统：
1 ) 由少液滴电弧靶、 真空室 1、 真空泵组 2、 用于放置工件 3的 工作转盘 4、 工艺气体 15和偏压电源 1 1构成；
2 )少液滴电弧靶的阴极靶 6和有水冷座 5位于真空室 1 的内腔， 少液滴电弧靶的大电磁线圈 10、 可编程直流电源 1 1、 弧电流源 12及 从水冷座 5的入水口处延伸出的冷却水管位于真空室外侧， 少液滴电 弧靶的电磁元件位于真空室 1 的内腔或外侧；
3 ) 工作转盘 4设置在真空室 1 的内腔， 工作转盘 4 的电源输入 端连接偏压电源 1 1 的输出端； 真空泵组 2 的抽风口连通真空室 1 的 内腔， 工艺气体 15连通真空室 1 的进气口。
参照图 2， 本实施例所述的一种少液滴电弧靶， 包括阴极靶 6， 在阴极靶 6的背面设有水冷座 5， 从水冷座 5的入水口处延伸出一段 冷却水管， 在水冷座 5的内腔或冷却水管的表面设有电磁元件， 在所 述电磁元件的背面设有大电磁线圈 10， 大电磁线圈 10连接有可编程 直流电源 1 1 ; 冷却水管连接有弧电流源 1 2 ; 大电磁线圈 10套接在冷 却水管上； 大电磁线圈 10产生的磁场极性与所述电磁元件的极性必 须相反，在阴极靶 6表面形成由电磁元件与大电磁线圈两者产生的叠 加磁场， 该磁场强度随大电磁线圈 10 的电流周期变化而变化， 阴极 靶 6的阴极弧斑的运动半径随之而周期变化。在阴极靶 6的一侧设有 起弧电极 7。
本实施例中：
在阴极靶 6表面形成由电磁元件与大电磁线圈 10两者产生的叠 加磁场， 叠加磁场为拱形弯曲磁场 B， 该拱形弯曲磁场由相对于阴极 靶面的平行磁场 B1和垂直磁场 B2两个分量叠加而成， :B=B1 + B2。 电磁元件由永久磁铁 8构成。
所述水冷座 5包括靶座水套 5-1、 与靶座水套 5-1 的内腔连通的 冷却水管 5-2; 靶座水套 5-1安装在真空室 1 中， 冷却水管 5-2穿过 真空室 1 的侧壁向外伸出、 并与外部冷却水接口连通， 冷却水管 5-2 与弧电流源 12连接； 阴极靶 6 固定在靶座水套 5-1 的右端开口处； 磁铁 8安装在位于真空室 1 内的靶座水套 5-1 的内腔中。
靶座水套 5-1的内腔分隔成相互连通的前水冷腔 5-1-1和后水冷 腔 5-1-2; 靶座水套 5-1 的通过靶体安装法兰 5-3与真空室 1侧壁上 的接口法兰密封固定连接； 冷却水管 5-2 由进水管 5-2-1 和出水管 5-2-2构成； 进水管 5-2-1 的一端与前水冷腔 5-1-1连通、 其另一端 穿过真空室 1侧壁与外部冷却水管接口连接， 出水管 5-2-2的一端与 后水冷腔 5-1-2连通、其另一端穿过真空室 1侧壁与外部冷却水管接 口连接。
在出水管 5-2-2上设有与弧电流源 12连接的接线端子 13。
靶座水套 5-1上位于阴极靶 6的侧面设有屏蔽罩 5-4。 可以限制 阴极靶表面的弧斑运动到侧面。
所述磁铁 8 通过调节螺丝 5-5 安装在靶座水套 5-1 的后冷水腔 5-1-2中。 对于磁铁所产生平行磁场 Bl， 可以通过调节螺丝来调整磁 铁的轴向位置， 使阴极弧斑的运动半径在合适的范围。
本发明的工作原理：
1、 工作时， 冷却水从进水管直接先到达前水冷腔冷却阴极靶的 背面， 然后再进入后水冷腔冷却磁铁，再通过出水管排出， 弧电源连 接在弧电源接线端子上， 弧电流通过出水管、 后水冷腔外壳、 前水冷 腔传递到阴极靶，弧斑通过在阴极靶侧面的起弧电极进行点燃。
2、 本发明为了加快阴极靶面弧斑的运动速度， 本发明在阴极靶 后面安装一组特殊排列的磁铁， 通过磁铁在阴极靶表面产生拱形弯曲 磁场 B， 该拱形弯曲磁场由相对于阴极靶面的平行磁场 B1 和垂直磁 场 B2两个分量叠加而成， gp : B = B1 + B2; 在垂直磁场 B2的作用下， 弧斑的运动速度将加快。 在水平磁场 B1 作用下， 迫使阴极弧斑在阴 极靶面作相应的园周运动， 其运动半径受洛伦兹力 F所影响： F = Iz X B1; 其中， Iz为弧电流， 一般通过配套的弧电源调整。 对于磁铁 所产生 Bl， 可以通过调整磁铁的轴向位置进行适当的调节， 使阴极 弧斑的运动半径在合适的范围。 在水平磁场 B1 的作用下， 阴极弧斑 的运动半径只能固定不动， 这样阴极靶的烧蚀会很不均匀， 影响阴极 靶材的利用率。 为提高阴极靶的利用率， 本发明在磁铁的后面， 再安 装一个电磁线圈，通过可编程直流电源在电磁线圈上加入特殊周期变 化的直流电流， 其产生的磁场极性与磁铁的极性必须相反， 这样阴极 靶表面的磁场将由磁铁与电磁线圈两者产生的磁场叠加而成， 该磁场 强度也将随电磁线圈的电流周期变化而变化， 阴极弧斑的运动半径也 将随之而周期变化。 所以， 通过本发明的阴极靶， 其表面可以很均匀 烧蚀， 利用率很高。
具体实施例 2:
参照图 3， 本实施例的特点是： 电磁元件由永久磁铁 8构成。 该 永久磁铁 8安装在位于真空室 1外的进水管 5-2-1上。其他与具体实 施例 1相同。
具体实施例 3:
参照图 4， 本实施例的特点是： 电磁元件由小电磁线圈 9构成， 小电磁线圈 9 安装在位于真空室 1 中的靶座水套 5-1 的后冷水腔 5-1-2中。 其他与具体实施例 1相同。
具体实施例 4:
参照图 5， 本实施例的特点是： 电磁元件由小电磁线圈 9构成，， 小电磁线圈 9安装在位于真空室 1外的进水管 5-2-1上。其他与具体 实施例 1相同。
以上所述， 仅为本发明较佳的具体实施例， 但本发明的保护范围 并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的范围 内， 根据本发明的技术方案及其发明构思加以等同替换或改变， 都属 于本发明的保护范围。

Claims

权利要求
1、 一种少液滴电弧靶， 其特征是： 包括阴极靶 （6)， 在阴极靶 (6) 的背面设有水冷座 （5)， 从水冷座 （5) 的入水口处延伸出一段 冷却水管， 在水冷座 （5) 的内腔或冷却水管的表面设有永磁体电磁 元件， 在所述永磁体电磁元件的背面设有大电磁线圈 （ 10)， 大电磁 线圈 （ 10) 连接有可编程直流电源 （ 11); 冷却水管连接有弧电流源 ( 12)； 大电磁线圈 （ 10) 套接在冷却水管上； 大电磁线圈 （ 10) 产 生的磁场极性与所述永磁体电磁元件的极性相反， 在阴极靶 （6) 表 面形成由永磁体电磁元件与大电磁线圈两者产生的叠加磁场， 该叠加 磁场强度随大电磁线圈 （ 10) 的电流周期变化而变化， 阴极靶 （6) 的阴极弧斑的运动半径随之而周期变化。
2、 根据权利要求 1 所述的一种少液滴电弧靶， 其特征是： 在阴 极靶 （6) 表面形成由永磁体电磁元件与大电磁线圈 （ 10) 两者产生 的叠加磁场， 叠加磁场为拱形弯曲磁场 B， 该拱形弯曲磁场 B由相对 于阴极靶面的平行磁场 B1和垂直磁场 B2两个分量叠加而成， BP: B =B1 + B2。
3、 根据权利要求 1 或 2所述的一种少液滴电弧靶， 其特征是： 永磁体电磁元件由永久磁铁 （8) 或小电磁线圈 （9) 构成。
4、 根据权利要求 1 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是：
1) 由少液滴电弧靶、 真空室 （ 1)、 真空泵组 （2)、 工作转盘 （4)、 工艺气体 （ 15) 和偏压电源 （ 11) 构成；
2) 少液滴电弧靶的阴极靶 （6) 和水冷座 （5) 位于真空室 （ 1) 的内腔， 少液滴电弧靶的大电磁线圈 （ 10)、 可编程直流电源 （ 11)、 弧电流源 （ 12) 及从水冷座 （5) 的入水口处延伸出的冷却水管位于 真空室外侧， 少液滴电弧靶的永磁体电磁元件位于真空室 （ 1) 的内 腔或外侧； 永磁体电磁元件由永久磁铁 （8) 或小电磁线圈 （9) 构成；
3) 工作转盘 （4) 设置在真空室 （ 1) 的内腔， 工作转盘 （4) 的 电源输入端连接偏压电源 （ 14) 的输出端； 真空泵组 （2) 的抽风口 连通真空室 （ 1) 的内腔， 工艺气体 （ 15) 连通真空室 （ 1) 的进气口。
5、 根据权利要求 4 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是： 所述水冷座 （5) 包括靶座水套 （5-1)、 与靶座水套 (5-1) 的内腔连通的冷却水管 （5-2); 靶座水套 （5-1) 安装在真空 室 （ 1) 中， 冷却水管 （5-2) 穿过真空室 （ 1) 的侧壁向外伸出、 并 与外部冷却水接口连通， 冷却水管 （5-2) 与弧电流源 （ 12) 连接； 阴极靶 （6) 固定在靶座水套 （5-1) 的右端开口处； 永久磁铁 （8) 安装在位于真空室 （ 1) 内的靶座水套 （5-1) 的内腔中； 或者是永久 磁铁 （8) 或小电磁线圈 （9) 安装在位于真空室 （ 1) 外的冷却水管 (5-2) 上。
6、 根据权利要求 5 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是： 靶座水套 （5-1) 的内腔分隔成相互连通的前水冷腔 (5-1-1) 和后水冷腔 （5-1-2); 靶座水套 （5-1) 的通过靶体安装法 兰 （5-3) 与真空室 （ 1) 侧壁上的接口法兰密封固定连接； 冷却水管 (5-2) 由进水管 （5-2-1) 和出水管 （5-2-2) 构成； 进水管 （5_2_1) 的一端与前水冷腔 （5-1-1) 连通、 其另一端穿过真空室 （ 1) 侧壁与 外部冷却水管接口连接， 出水管 （5-2-2) 的一端与后水冷腔（5-1-2) 连通、 其另一端穿过真空室 （ 1) 侧壁与外部冷却水管接口连接。
7、 根据权利要求 6 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是： 在进水管 （5-2-1) 或出水管 （5-2-2) 上设有与弧电 流源 （ 12) 连接的接线端子 （ 13)。
8、 根据权利要求 5 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是： 靶座水套 （5-1) 上位于阴极靶 （6) 的侧面设有屏蔽 罩 （5-4)。
9、 根据权利要求 6 所述的一种带少液滴电弧靶的等离子涂层系 统， 其特征是： 所述磁铁 （8) 通过调节螺丝 （5-5) 安装在靶座水套
(5-1) 的前冷水腔 （5-1-1) 中。
PCT/CN2012/078986 2011-07-21 2012-07-21 一种少液滴电弧靶及带少液滴电弧靶的等离子涂层*** WO2013010509A1 (zh)

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