WO2013006027A1 - Method for use in fabricating nanomaterials based devices - Google Patents

Method for use in fabricating nanomaterials based devices Download PDF

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Publication number
WO2013006027A1
WO2013006027A1 PCT/MY2012/000133 MY2012000133W WO2013006027A1 WO 2013006027 A1 WO2013006027 A1 WO 2013006027A1 MY 2012000133 W MY2012000133 W MY 2012000133W WO 2013006027 A1 WO2013006027 A1 WO 2013006027A1
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Prior art keywords
nanomaterial
nanomaterials
catalyst
catalyst island
radial
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Application number
PCT/MY2012/000133
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French (fr)
Inventor
Teh Aun SHIH
Daniel Bien Chia SHENG
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Mimos Berhad
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Publication of WO2013006027A1 publication Critical patent/WO2013006027A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/413—Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H10K85/225—Carbon nanotubes comprising substituents

Definitions

  • the present invention relates to nanostructures and more particularly a method for use in fabricating nanostructured devices.
  • nanomaterials technology presents continually increasing advances endeavors for the respective manufacturers in order to provide a better result in ensuring the suitable growth morphology in view of the nanostructured based devices involved. For instance, nanotubes (NT) and nanowires (N ) which are grown laterally would typically grow in a random fashion on the substrate surface thus makes it difficult to form regular NT/NW device arrays.
  • NT/NW materials In view of device arrays, known methods for the synthesis of NT/NW materials is by means of the chemical vapour deposition, whereby the NT/NW materials can be deposited directly on a substrate using catalyst sites. Conventional methods results to the profile of NT/NW being spaghetti like and growing without any orientation. Advances in using special types of substrates may aid to growth of NT in a lateral manner however such approach is restricted as only suitable substrates can be used. In other efforts, alignment also has been achieved using directional flow of gas and by electric fields, but for this technique, deposition chambers would require modifications which may not be favorable in view of the possibility of scale-up for wafer scale depositions.
  • US 746 6069 (Harvard College) , which relates to a method for fabrication of nanotube device.
  • the main components are a support structure including an aperture extending from a front surface to a back surface of the structure; and at least one carbon nanotube extending across the aperture and accessible through the aperture from both the front surface and the back surface of the support structure.
  • this method may be expedient for providing fabrication which is in a more precise and reliable manner, the nanotubes are still formed in a random fashion and there is no disclosure related to growth of nanomaterials based on patterns.
  • FIG 1 shows the steps involved in the method in accordance with a preferred embodiment of the present invention
  • FIG 2 (a) and (b) show the growth morphology of the nanomaterial and how the catalyst aids to control said growth;
  • FIG 3 shows the formation of radial contacts, patterned nanomaterial growth with the aid of catalyst islands in accordance with a preferred embodiment of the present invention
  • FIG 4 shows diversity of the electrodes to provide electrical connection to the nanomaterial
  • FIG 5 shows the divisibility of the radial electrode.
  • a method for fabricating a nanomaterial based device comprising the steps of: providing at least one catalyst island; forming nanomaterials based on said catalyst island; forming radial contacts to form electrical connections to the formed nanomaterials; and forming a source drain configuration with a network of nanomaterials to serve as conduction channels.
  • a nanomaterial based device comprising: at least one catalyst island for controlling the growth of nanomaterials; a plurality of radial electrodes positioned in a manner that they surround the catalyst island to form electrical connection with the nanomaterials.
  • FIG 1 shows the main steps involved with respect to the method in accordance with a preferred embodiment of the present invention.
  • the steps are: providing at least one catalyst island (S100) , forming nanomaterials (S200) based on said catalyst island, providing radial contacts (S300) ; etching to form suspended nanomaterials (S400) , depositing gates (S500) and finally the funtionalisation (S600) of the fabricated device.
  • S100 catalyst island
  • S200 nanomaterials
  • S300 radial contacts
  • S400 etching to form suspended nanomaterials
  • S500 depositing gates
  • S600 funtionalisation
  • Nanomaterials which may include nanotubes or nanowires are grown laterally, whereby spaghetti like morphology having no orientation is typically obtained. Such occurrence can be seen in FIG 2 (a) . Owing to such disoriented growth, the development of nanomaterials based devices can be difficult.
  • the method of the present invention aids to alleviate such difficulty by controlling the growth of the nanomaterial which will be described shortly. As seen in FIG 2(b) the growth of the nanomaterial is controlled with the aid of the catalyst islands.
  • nanomaterial will be grown at a lower process temperature.
  • the catalyst material is confined and isolated, by way of patterning the catalyst.
  • at least one catalyst is required for the purpose of the method in accordance with the present invention.
  • at least one or a plurality of catalyst islands and alignment marks are accordingly deposited using lithography or other suitable conventional techniques. Nevertheless, lithography is preferred as this technique allows the growth of NTs/N s to be controlled to designated locations on the substrate. Lithography also allows the catalyst size to be controlled which in turn controls the NT/N densities.
  • the nanomaterial is suitably grown in a random orientation but along the plane of the substrate surface.
  • the synthesis or growth of nanomaterial may be within 2.0-5.0 ⁇ in length, whereby said nanomaterial grow radially from the catalyst island.
  • such nanomaterial tends to form laterally along the plane of the substrate surface however with no preferred orientation.
  • radial contacts are deposited or patterned over the nanomaterial thus forming a source drain configuration with a network of nanomaterial to serve as conduction channels.
  • the contacts provided are radial, most of the nanomaterial can be contacted and hence the device array is independent of the growth of the nanomaterial.
  • the radial electrode structure may be provided in other various forms, as shown in FIG 4.
  • a larger number of devices can be formed by way of dividing the radial contact as suitably shown in FIG 5, subject to the process system capabilities .
  • the final step of the method in accordance to the preferred embodiment of the present invention is the functionalisation of the device which is achieved by depositing gate contacts, etching to form suspended nanomaterials bridges and then functionalization.
  • a method of fabricating having steps as described above provides the ability to develop an array of nanomaterials based devices which are independent of the nanomaterials growth orientation. Accordingly, the nanomaterials based devices can be developed more reproducibly and allowing the possibility of scaling-up. Examples of applications or functionalities include sensors and transistors.
  • a nanomaterial based device adapted based on the preferred embodiment of the present invention may comprise of at least one catalyst island for controlling the growth of nanomaterials; a plurality of radial electrodes positioned in a manner that they surround the catalyst island to form electrical connection with the nanomaterials .

Abstract

The present invention discloses a method for fabricating a nanomaterial based device, whereby the gist of the method includes the use of catalyst islands so as to allow controlled formation of the nanomaterials compared to conventional methods, and whereby there is provided forming at least one source-drain configuration between networks of nanomaterials to serve as conduction channels. Further in accordance with a preferred embodiment of the present invention, the fabrication of a nanostructured device is not dependent on an NT/NW growth orientation.

Description

METHOD FOR USE IN FABRICATING NANOMATERIALS BASED DEVICES
FIELD OF INVENTION
The present invention relates to nanostructures and more particularly a method for use in fabricating nanostructured devices.
BACKGROUND OF INVENTION
Currently, there are relatively a large number of different methods and systems used in the growth or formation of nanomaterials in order to develop nanostructured devices. Preferred nanomaterials growth characteristics pose a variety of challenges in obtaining the desired and uniform outcome.
The necessity to accomplish these . characteristics of the nanomaterials technology presents continually increasing advances endeavors for the respective manufacturers in order to provide a better result in ensuring the suitable growth morphology in view of the nanostructured based devices involved. For instance, nanotubes (NT) and nanowires (N ) which are grown laterally would typically grow in a random fashion on the substrate surface thus makes it difficult to form regular NT/NW device arrays.
In view of device arrays, known methods for the synthesis of NT/NW materials is by means of the chemical vapour deposition, whereby the NT/NW materials can be deposited directly on a substrate using catalyst sites. Conventional methods results to the profile of NT/NW being spaghetti like and growing without any orientation. Advances in using special types of substrates may aid to growth of NT in a lateral manner however such approach is restricted as only suitable substrates can be used. In other efforts, alignment also has been achieved using directional flow of gas and by electric fields, but for this technique, deposition chambers would require modifications which may not be favorable in view of the possibility of scale-up for wafer scale depositions.
An exemplary of the prior art teaching a method to alleviate at least one of the current drawbacks is as disclosed in US 746 6069, (Harvard College) , which relates to a method for fabrication of nanotube device. In this method, the main components are a support structure including an aperture extending from a front surface to a back surface of the structure; and at least one carbon nanotube extending across the aperture and accessible through the aperture from both the front surface and the back surface of the support structure. Although this method may be expedient for providing fabrication which is in a more precise and reliable manner, the nanotubes are still formed in a random fashion and there is no disclosure related to growth of nanomaterials based on patterns.
Accordingly, there is a need for a method that is directed to solving the above problems and thus fulfilling the needs as discussed above. Thus, it is therefore the primary object of the present invention to overcome the above discussed problems by providing an improvement to the method of fabricating nanostructured based devices.
It is a further object of the present invention to provide a method for use in fabricating a NT/NW based devices, whereby the fabrication of the nanostructured device is not dependant on the NT/NW growth orientation.
Still other embodiments of the present invention will become readily apparent to those skilled in the art from the following detailed description, wherein embodiments of the invention are described by way of illustration. As will be realized, the invention is capable of other and different embodiments and its several details are capable of modifications in various respects, all without departing from the spirit and the scope of the present invention.
BRIEF DESCRIPTION OF DRAWINGS
Features of the invention will be apparent from the following description when read with reference to the accompanying drawings:
FIG 1 shows the steps involved in the method in accordance with a preferred embodiment of the present invention;
FIG 2 (a) and (b) show the growth morphology of the nanomaterial and how the catalyst aids to control said growth;
FIG 3 shows the formation of radial contacts, patterned nanomaterial growth with the aid of catalyst islands in accordance with a preferred embodiment of the present invention;
FIG 4 shows diversity of the electrodes to provide electrical connection to the nanomaterial; and
FIG 5 shows the divisibility of the radial electrode. SUMMARY OF INVENTION
In one aspect of the invention, there is provided a method for fabricating a nanomaterial based device; said method comprising the steps of: providing at least one catalyst island; forming nanomaterials based on said catalyst island; forming radial contacts to form electrical connections to the formed nanomaterials; and forming a source drain configuration with a network of nanomaterials to serve as conduction channels.
In another aspect of the invention, there is provided a nanomaterial based device comprising: at least one catalyst island for controlling the growth of nanomaterials; a plurality of radial electrodes positioned in a manner that they surround the catalyst island to form electrical connection with the nanomaterials. DETAILED DESCRIPTION
In the following description, reference is made to the accompanying drawings where, by way of illustration, specific embodiments of the invention are shown. It is to be understood that other embodiments may be used as structural and other changes may be made without departing from the scope of the present invention. Also, the various embodiments and aspects from each of the various embodiments may be used in any suitable- combinations. Accordingly, the drawings and detailed description are to be regarded as illustrative in nature and not as restrictive.
FIG 1 shows the main steps involved with respect to the method in accordance with a preferred embodiment of the present invention. As shown in FIG 1, the steps are: providing at least one catalyst island (S100) , forming nanomaterials (S200) based on said catalyst island, providing radial contacts (S300) ; etching to form suspended nanomaterials (S400) , depositing gates (S500) and finally the funtionalisation (S600) of the fabricated device. Each step will be described in detail herein.
Nanomaterials which may include nanotubes or nanowires are grown laterally, whereby spaghetti like morphology having no orientation is typically obtained. Such occurrence can be seen in FIG 2 (a) . Owing to such disoriented growth, the development of nanomaterials based devices can be difficult.
The method of the present invention aids to alleviate such difficulty by controlling the growth of the nanomaterial which will be described shortly. As seen in FIG 2(b) the growth of the nanomaterial is controlled with the aid of the catalyst islands.
In accordance with the preferred embodiment of the present invention, with the use of catalyst materials, nanomaterial will be grown at a lower process temperature. In order to control the growth of the nanomaterial, the catalyst material is confined and isolated, by way of patterning the catalyst. It should be understood that at least one catalyst is required for the purpose of the method in accordance with the present invention. In this step, at least one or a plurality of catalyst islands and alignment marks are accordingly deposited using lithography or other suitable conventional techniques. Nevertheless, lithography is preferred as this technique allows the growth of NTs/N s to be controlled to designated locations on the substrate. Lithography also allows the catalyst size to be controlled which in turn controls the NT/N densities.
Next, and now referring to FIG 3 based on the catalyst, the nanomaterial is suitably grown in a random orientation but along the plane of the substrate surface. The synthesis or growth of nanomaterial may be within 2.0-5.0μπι in length, whereby said nanomaterial grow radially from the catalyst island. As mentioned, such nanomaterial tends to form laterally along the plane of the substrate surface however with no preferred orientation. In the subsequent step, radial contacts are deposited or patterned over the nanomaterial thus forming a source drain configuration with a network of nanomaterial to serve as conduction channels. As the contacts provided are radial, most of the nanomaterial can be contacted and hence the device array is independent of the growth of the nanomaterial. It is preferred that the radial electrode structure may be provided in other various forms, as shown in FIG 4.
According to the preferred embodiment of the present invention, a larger number of devices can be formed by way of dividing the radial contact as suitably shown in FIG 5, subject to the process system capabilities .
The final step of the method in accordance to the preferred embodiment of the present invention is the functionalisation of the device which is achieved by depositing gate contacts, etching to form suspended nanomaterials bridges and then functionalization.
A method of fabricating having steps as described above provides the ability to develop an array of nanomaterials based devices which are independent of the nanomaterials growth orientation. Accordingly, the nanomaterials based devices can be developed more reproducibly and allowing the possibility of scaling-up. Examples of applications or functionalities include sensors and transistors.
A nanomaterial based device adapted based on the preferred embodiment of the present invention may comprise of at least one catalyst island for controlling the growth of nanomaterials; a plurality of radial electrodes positioned in a manner that they surround the catalyst island to form electrical connection with the nanomaterials .
Although the present invention has been described with reference to the preferred embodiment thereof, it is apparent to those skilled in the art that a variety of modifications and changes may be made without departing from the scope of the present invention which is intended to be defined by the appended claims.

Claims

1. A method for fabricating a nanomaterial based device; said method comprising the steps of:
providing at least one catalyst island (S100) ; forming nanomaterial based on said catalyst island (S200) ; forming radial contacts (S300) to form electrical connections to the formed nanomaterial so as to control the formation or growth orientation of the nanomaterial; and
forming a source drain configuration with a network of nanomaterial to serve as conduction channels.
2. A method as claimed in Claim 1 wherein the method further comprising the step of functionalization of the device, whereby said step comprises etching (S400) to form suspended nanomaterials and gate deposition (S500) .
3. A method as claimed in Claim 1 wherein the radial contacts are formed over the nanomaterials.
4. A method as claimed in Claim 1 wherein the nanomaterials are formed along the substrate surface or suspended above the substrate surface.
5. A method as claimed in Claim 1 wherein the nanomaterial is
selected from the group consisting of nanotubes or nanowires.
6. A method as claimed in Claim 1 wherein the formation of catalyst Island is modifiable to control the nanomaterials density. A nanomaterial based device comprising: at least one catalyst island for controlling the growth orientation of nanomaterials; a plurality of radial electrodes positioned in a manner that they surround the catalyst island to form electrical connection with the nanomaterial and thus form conduction channels . The device as claimed in Claim 7 wherein the radial electrode is divisible to form multiple device connection to a single catalyst island.
PCT/MY2012/000133 2011-07-01 2012-06-22 Method for use in fabricating nanomaterials based devices WO2013006027A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006076044A2 (en) * 2004-07-30 2006-07-20 Agilent Technologies, Inc. Nanostructure-based transistor
US20060240974A1 (en) * 2002-08-02 2006-10-26 Nec Corporation Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes
WO2008018726A1 (en) * 2006-08-07 2008-02-14 Seoul National University Industry Foundation Nanostructure sensors
US20080296537A1 (en) * 2006-02-07 2008-12-04 President And Fellows Of Harvard College Gas-phase functionalization of carbon nanotubes
US7466069B2 (en) 2002-10-29 2008-12-16 President And Fellows Of Harvard College Carbon nanotube device fabrication
US20110133169A1 (en) * 2009-12-04 2011-06-09 International Business Machines Corporation Gate-All-Around Nanowire Tunnel Field Effect Transistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060240974A1 (en) * 2002-08-02 2006-10-26 Nec Corporation Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes
US7466069B2 (en) 2002-10-29 2008-12-16 President And Fellows Of Harvard College Carbon nanotube device fabrication
WO2006076044A2 (en) * 2004-07-30 2006-07-20 Agilent Technologies, Inc. Nanostructure-based transistor
US20080296537A1 (en) * 2006-02-07 2008-12-04 President And Fellows Of Harvard College Gas-phase functionalization of carbon nanotubes
WO2008018726A1 (en) * 2006-08-07 2008-02-14 Seoul National University Industry Foundation Nanostructure sensors
US20110133169A1 (en) * 2009-12-04 2011-06-09 International Business Machines Corporation Gate-All-Around Nanowire Tunnel Field Effect Transistors

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