WO2012171354A1 - Exhausting method, exhausting apparatus and substrate processing device - Google Patents

Exhausting method, exhausting apparatus and substrate processing device Download PDF

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Publication number
WO2012171354A1
WO2012171354A1 PCT/CN2012/071266 CN2012071266W WO2012171354A1 WO 2012171354 A1 WO2012171354 A1 WO 2012171354A1 CN 2012071266 W CN2012071266 W CN 2012071266W WO 2012171354 A1 WO2012171354 A1 WO 2012171354A1
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WIPO (PCT)
Prior art keywords
exhaust
substrate processing
rate
ports
processing chamber
Prior art date
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PCT/CN2012/071266
Other languages
French (fr)
Chinese (zh)
Inventor
古村雄二
张建勇
周卫国
徐亚伟
Original Assignee
北京北方微电子基地设备工艺研究中心有限责任公司
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Application filed by 北京北方微电子基地设备工艺研究中心有限责任公司 filed Critical 北京北方微电子基地设备工艺研究中心有限责任公司
Priority to SG2013084991A priority Critical patent/SG195006A1/en
Publication of WO2012171354A1 publication Critical patent/WO2012171354A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Definitions

  • the present invention relates to the field of microelectronic processing technology, and in particular to an exhaust gas method, apparatus, and substrate processing apparatus using the above-described exhaust method or apparatus. Background technique
  • CVD chemical vapor deposition
  • a gas supply port and an exhaust port are used to make the process gas enter the chamber from the gas supply port and participate in the corresponding chemical reaction, the by-product after the reaction and the process gas not fully participating in the reaction. It is discharged from the exhaust port to form a stable airflow field distribution within the chamber.
  • the air flow formed by the air supply and exhaust scheme is relatively fixed, so that a part of the chamber (such as the chamber area near the air supply port and the exhaust port) always has a strong airflow. In other areas, there is always no adequate airflow. Inhomogeneous flow distribution of the above process gases will further result in uneven CVD process results.
  • Japanese Patent Publication No. 1994-349738 discloses a CVD apparatus which uses a complicated substrate holding portion and a spacer device to guide a gas flow in an attempt to increase the distribution of a process gas in a chamber. All are hooked.
  • the structure of the substrate holding portion and the separator in the technical solution is complicated, the film attached to the complicated mechanism is easily peeled off to form particle contamination.
  • the design of the above-mentioned separator device has a great correlation with the volume of the chamber. If the same separator device is installed in the substrate processing chamber of different volumes, the gas distribution effect generated will be large. Difference; Therefore, when applied to a large-volume substrate processing apparatus, it is necessary to redesign and manufacture the above-described spacer device, which will increase the design cost and manufacturing cost of the device to some extent.
  • the present invention provides an exhausting method capable of uniformly distributing process gases in respective regions in a substrate processing chamber, thereby providing uniformity of process results, and is also applicable to large-scale equipment.
  • the present invention provides an exhaust device which is also capable of uniformly distributing process gases in various regions in a substrate processing chamber, thereby providing uniformity of process results, and is also applicable to large equipment. .
  • the present invention also provides a substrate processing apparatus using the above-described exhaust method or apparatus, which is also capable of uniformly distributing process gases in respective regions in a substrate processing chamber, thereby providing uniform process results. Sex, and there is no need to redesign the exhaust solution when the equipment is being remodeled.
  • the present invention provides an exhaust method for venting a substrate processing chamber, the method comprising the steps of: 10) providing at least two exhaust ports for the substrate processing chamber, and The exhaust rate of the exhaust port can be individually controlled; 20) the at least two exhaust ports are exhausted outward at different exhaust rates.
  • step 20 the exhaust rate of each exhaust port is varied with time.
  • step 10 the number of exhaust ports is at least three.
  • step 20 the exhaust rate of at least one of the at least three exhaust ports is made larger than the exhaust rate of the other exhaust ports.
  • step 20 the exhaust rate of one of the exhaust ports is made larger than the exhaust rate of the other exhaust ports, and the exhaust rates of the other exhaust ports are equal.
  • step 20 the exhaust rate of one of the exhaust ports is made larger than the other exhaust ports; meanwhile, the exhaust gas rate of the other exhaust ports is set according to the rule: the exhaust port having the largest exhaust gas velocity is The exhaust rate of the far exhaust port is smaller.
  • step 20 the respective exhaust ports are sequentially obtained with the maximum exhaust rate in accordance with the order of the respective exhaust ports in the clockwise or counterclockwise direction.
  • step 20 the exhaust rates of the respective exhaust ports are continuously changed; or, the exhaust rates of the respective exhaust ports are changed once every predetermined time period.
  • the predetermined duration is a fixed value or a variable.
  • the present invention also provides an exhaust device for performing an exhaust operation in cooperation with a substrate processing chamber, the exhaust device including at least two exhaust ports connected to the substrate processing chamber, wherein each exhaust The exhaust rate of the port can be controlled separately.
  • the number of exhaust ports is at least three.
  • the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port may be adjusted, and the exhaust port row is adjusted by separately adjusting the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port.
  • the gas rate is adjusted.
  • each of the exhaust gas exhaust ports is respectively connected to a dedicated exhausting device, and the exhaust gas velocity of each of the exhaust ports is adjusted by adjusting the pumping rate of each of the exhausting devices.
  • each exhaust port is connected to the same air suction device through a separate exhaust line, and each of the exhaust lines is provided with a cross-section regulating valve, by adjusting a sectional regulating valve in each exhaust line The exhaust cross-sectional area of each exhaust port is adjusted to adjust the exhaust rate of each exhaust port.
  • each of the exhaust ports is connected to a dedicated exhaust device through a separate exhaust line, and a cross-section regulating valve is disposed in each exhaust line; by controlling the pumping rate of each pumping device and / or adjusting the cross-section regulating valve to adjust the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port to adjust the exhaust rate of each exhaust port.
  • the exhaust rate control module is further configured to control each exhaust port with different exhaust speeds The rate is vented outward and the exhaust rate of each vent varies over time.
  • the exhaust rate control module sequentially controls the exhaust rate of the exhaust port to a maximum value in a clockwise or counterclockwise direction.
  • the section regulating valve comprises an outlet end, at least three dispersed inlet ends and a rotatable spool disposed inside the section regulating valve; wherein the outlet end is connected to an air extracting device, and at least three intake air The ends are respectively connected to the respective exhaust ports; the rotatable spool is used to make the at least three of the at least three ) to cause a corresponding change in the exhaust rate of the exhaust ports correspondingly connected to the respective intake ends.
  • a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed.
  • the present invention also provides a substrate processing apparatus including a substrate processing chamber and a substrate holding portion disposed in the substrate processing chamber, further comprising the exhaust device provided by the present invention as claimed in the A uniformly distributed airflow is formed over the substrate.
  • the substrate holding portion includes at least two layers of tray structures arranged along the height direction of the substrate processing chamber; in the substrate processing chamber, an air supply passage and an exhaust passage are provided corresponding to the positions of the respective trays, and the exhausting device Connected to the exhaust passage.
  • the gas supply passage is disposed along a central axis of the substrate processing chamber, and correspondingly, the exhaust passage is disposed around the substrate processing chamber.
  • the air supply passage is disposed around the substrate processing chamber, and correspondingly, the exhaust passage is disposed along a central axis of the substrate processing chamber.
  • the substrate processing apparatus is a metal organic compound chemical vapor deposition apparatus.
  • the venting method provided by the present invention comprises: arranging at least two exhaust ports for which the exhaust gas rate can be individually controlled for the substrate processing chamber; and causing the respective exhaust ports to be exhausted outward at different exhaust rates. It can be seen that when the exhausting method provided by the present invention is used for the exhausting operation, at least two exhaust ports are The exhaust gas is exhausted, and the exhaust rate of each exhaust port is adjusted at any time according to the actual airflow distribution. Therefore, the exhaust method provided by the present invention can make the process gas more evenly distributed throughout the entire processing area of the substrate processing chamber, so that sufficient airflow can be obtained in various regions of the chamber, thereby effectively improving the substrate. Process uniformity.
  • venting operation provided by the above-described present invention does not directly relate to the volume of the substrate processing chamber during the venting operation, nor does it require any change to the structure of the substrate processing chamber or installation in the substrate processing chamber.
  • a complicated separator device therefore, the exhaust gas method provided by the present invention can effectively provide uniformity of process gas distribution when applied to a large-sized substrate processing apparatus.
  • the exhaust device provided by the present invention performs an exhaust operation by at least two exhaust ports provided on the substrate processing chamber, so that the process gas in the chamber can be distributed according to a plurality of flow directions; and each exhaust port is separately controlled
  • the exhaust rate also allows for adjustment of the flow distribution of the airflow so that sufficient airflow is available in all areas of the chamber. Therefore, when the exhaust device provided by the present invention is exhausted, the process gas can be more evenly distributed throughout the internal space of the substrate processing chamber, thereby effectively improving the uniformity of the substrate processing process.
  • the use of the venting apparatus provided by the present invention described above does not directly relate to the volume of the substrate processing chamber during the venting operation, nor does it require any change to the structure of the substrate processing chamber or installation in the substrate processing chamber.
  • the complicated separator device; therefore, the exhaust device provided by the present invention can effectively provide the uniformity of the distribution of the process gas when applied to a large-sized substrate processing apparatus, thereby improving the uniformity of the process results.
  • the substrate processing apparatus provided by the present invention comprises a substrate processing chamber, and the substrate processing chamber is vented by the above-described venting method provided by the present invention or the above-described venting apparatus provided by the present invention. Therefore, the substrate processing apparatus provided by the present invention can also form a uniformly distributed airflow over the substrate, thereby obtaining a uniform substrate processing result; and the substrate processing apparatus provided by the present invention is still in a large-scale design such as expansion. The same exhaust design can be used.
  • FIG. 1 is a schematic flow chart of an exhaust method provided by the present invention
  • 2 is a schematic structural view of a substrate processing chamber to which an exhaust method provided by the present invention is applied
  • FIG. 3 is a schematic block diagram of a first embodiment of an exhaust apparatus provided by the present invention
  • FIG. 4 is a schematic structural diagram of an apparatus of the embodiment shown in FIG. 3;
  • Figure 5 is a schematic block diagram of a second embodiment of the exhaust device provided by the present invention.
  • Figure 6 is a schematic block diagram of a third embodiment of the exhaust device provided by the present invention.
  • Figure 7 is a schematic block diagram of a fourth embodiment of the exhaust device provided by the present invention.
  • Figure 8 is a cross-sectional view showing a first type of sectional regulating valve used in the exhausting device of the present invention
  • Figure 9 is a cross-sectional view showing a second type of sectional regulating valve used in the exhausting device provided by the present invention
  • FIG. 11 is a schematic structural view of a substrate processing apparatus provided by the present invention
  • FIG. 12 is a schematic structural diagram of a system of a specific embodiment of a substrate processing apparatus according to the present invention.
  • Figure 13 is a cross-sectional view showing a substrate processing chamber having a multi-layer tray used in the substrate processing apparatus of the present invention. detailed description
  • FIG. 1 is a schematic flow chart of an exhaust method provided by the present invention.
  • the method comprises the steps of: 10) providing at least two exhaust ports for the substrate processing chamber, and allowing the exhaust rates of the respective exhaust ports to be individually controlled; 20) making the at least two exhaust ports different The exhaust rate is exhausted outward.
  • the venting method provided by the present invention can be used for venting operations, and a relatively uniform gas flow distribution can be produced in each of the substrate processing chambers.
  • the exhaust rate of each of the exhaust ports may be varied over time.
  • a dynamic airflow can be formed in the chamber, and the dynamic airflow distribution can be expressed as a distribution of airflow that changes in at least two directions along the chamber and that changes in intensity over time; or appears to appear randomly in any direction in the chamber.
  • Airflow distribution and preferably, a distribution of airflow that rotates in a clockwise or counterclockwise direction within the chamber, and the like. Please refer to the following embodiments for details.
  • the number of venting ports of the substrate processing chamber is at least three.
  • the at least three exhaust ports are dispersedly disposed at different positions of the chamber, and in order to make the process gas evenly distributed in the chamber, the airflow generated by each exhaust port should be covered as much as possible to cover the substrate processing. All areas of the chamber.
  • the exhaust rate of at least one of the at least three exhaust ports is made larger than the exhaust rate of the other exhaust ports, and the exhaust rate of each of the exhaust ports is varied with time.
  • a swirling gas flow can be formed in the substrate processing chamber so that a relatively uniform process gas distribution can be obtained both in the circumferential direction and in the radial direction of the substrate.
  • FIG. 2 a schematic structural view of a substrate processing chamber for an exhaust method provided by the present invention.
  • four exhaust ports (36-1, 36-2, 36-3, and 36-4) are disposed around the substrate processing chamber, and the gas supply port 23 is located at the center of the chamber.
  • the exhaust rate of one of the four exhaust ports (36-1, 36-2, 36-3, and 36-4) is maximized (exhaust rate is indicated by E in the figure), and other The exhaust rates of the three exhaust ports are substantially equal; and, the maximum exhaust rate E1 is moved between the respective exhaust ports according to a certain rule, that is, four exhaust ports are made according to certain rules.
  • One of (36-1, 36-2, 36-3, and 36-4) has the highest exhaust rate, thereby forming a dynamic airflow distribution. It is easily understood that, as an extreme case of the embodiment, the exhaust rates of the other three exhaust ports can be made zero.
  • the exhaust rates of the other exhaust ports are set according to the following rules, that is, according to the above exhaust rate.
  • the distance between the exhaust ports is set to a close distance to set the exhaust rate of the exhaust port. Specifically, the farther away from the exhaust port where the exhaust rate is the largest, the exhaust rate of the exhaust port is smaller. That is to say, the exhaust rate of each exhaust port is gradually decreased by the exhaust port having the largest exhaust rate, so that the air flow can be changed integrally and more smoothly, and finally a more uniform substrate processing is obtained. result.
  • the exhaust ports can be sequentially obtained in the order of clockwise or counterclockwise direction to obtain the maximum exhaust rate, thereby making the substrate processing chamber A rotating gas stream is formed, which in turn results in a more uniform process.
  • the following manner may be employed: continuously changing the exhaust rate of each exhaust port in the order shown in the clockwise or counterclockwise direction to form the above rotation; or, in a clockwise or counterclockwise direction
  • the sequence shown changes the exhaust rate of each exhaust port every predetermined time period to form a rotation.
  • the predetermined duration may be a fixed value or a variable; thereby causing the rotation to be a hook speed rotation or a speed change rotation or an acceleration rotation.
  • the predetermined duration is a constant value, a uniform flow of airflow will be formed in the substrate processing chamber; and when the predetermined duration is a variable with time, the shifting or accelerating motion will be formed in the substrate processing chamber. airflow.
  • the parameters such as the length of the specific predetermined length and the size of the exhaust rate can be flexibly set according to actual process requirements or experimental measurements, and can be adjusted at any time.
  • the exhaust method provided by the present invention can obtain sufficient airflow supply in each region in the substrate processing chamber, thereby improving the uniformity of the substrate processing result; and, because the above-described exhaust method is simple and easy Therefore, it is not necessary to provide a complicated spacer mechanism in the substrate processing chamber, thereby effectively avoiding problems such as particle contamination caused by the spacer mechanism; and the exhaust method provided by the present invention can be applied to bases of different volumes.
  • the sheet processing equipment has the same exhaust effect.
  • the present invention also provides an exhaust device which is also used for the exhaust operation of the substrate processing chamber.
  • the venting means includes at least two venting ports connected to the substrate processing chamber, wherein the venting rates of the respective venting ports can be individually controlled.
  • at least two exhaust ports which can be separately controlled to control the exhaust rate, a plurality of airflow directions can be formed in the substrate processing chamber, and the flow rates of the respective airflow directions can be adjusted in real time as needed, thereby making the chamber Sufficient airflow can be obtained in each area to improve the uniformity of the process results.
  • the venting operation provided by the present invention can be used for venting operations, and a relatively uniform gas flow distribution can be produced in each of the substrate processing chambers.
  • FIG. 3 is a schematic block diagram of a first embodiment of the exhaust apparatus provided by the present invention
  • FIG. 4 is a schematic structural view of the apparatus of the embodiment shown in FIG.
  • the venting apparatus of this embodiment includes four exhaust ports 36 (i.e., 36-1, 36-2, 36-3, and 36-4) disposed on the side walls of the substrate processing chamber 13.
  • each of the exhaust ports 36 is connected with a dedicated independent air extracting device, and the exhaust rate of each of the exhaust ports 36 is adjusted by adjusting the pumping rate of each of the air extracting devices.
  • the air extracting device may be, for example, an air pump, but the present invention is not limited thereto, and other types of air extracting devices may be used.
  • each of the exhaust ports is connected to an air pump, and therefore, the four pumpings are sequentially controlled in the order shown in the clockwise direction or the counterclockwise direction. Pumping rate of the air pump and increasing it gradually When large, a dynamic dynamic airflow distribution can be formed in the chamber.
  • the condition that at least three exhaust ports are dispersedly disposed around the chamber is satisfied, and therefore, the number of the exhaust ports is not limited to four as shown in FIG. Instead, three, five or even more vents can be used, and these are also within the scope of the invention.
  • FIG. 5 is a schematic block diagram of a second embodiment of an exhaust device provided by the present invention.
  • independent cross-section regulating valves are disposed in each of the pipelines between the exhaust ports and the air extracting device.
  • the exhaust cross-sectional area of each exhaust port is adjusted by adjusting the cross-section regulating valve in each exhaust line, and the exhaust rate of each exhaust port is adjusted.
  • FIG. 6 is a schematic block diagram of a third embodiment of the exhaust device provided by the present invention.
  • each of the exhaust ports is connected to the same air suction device through separate exhaust pipes, and each of the exhaust pipes is provided with a cross-section regulating valve, which is adjusted in each exhaust pipe.
  • the cross-section regulating valve adjusts the exhaust cross-sectional area of each exhaust port to adjust the exhaust rate of each exhaust port.
  • FIG. 7 is a schematic block diagram of a fourth embodiment of an exhaust device provided by the present invention.
  • the present embodiment differs from the embodiment shown in Fig. 6 only in that all the exhaust ports are uniformly connected to the same sectional regulating valve, whereby the exhaust rate of each exhaust port is uniformly controlled by the sectional regulating valve.
  • the purpose is to adjust the respective exhaust ports by adjusting the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port.
  • the purpose of the exhaust rate; and in turn, a dynamically varying airflow distribution is created within the substrate processing chamber by rationally setting the exhaust rates of the various exhaust ports and dynamically changing them over time.
  • a dedicated exhaust rate control module can be provided to control the exhaust speed of each exhaust port The rate is such that each of the exhaust ports is exhausted outward at a different exhaust rate and the exhaust rate of each of the exhaust ports is varied over time.
  • the exhaust rate control module can sequentially increase the exhaust rate of each exhaust port according to the order of the exhaust ports in the clockwise direction or the counterclockwise direction in the exhaust ports, in other words, The exhaust rate control module can sequentially control the exhaust rate of the exhaust port to a maximum value in a clockwise or counterclockwise direction, thereby forming a swirling airflow that rotates in a clockwise or counterclockwise direction in the substrate processing chamber;
  • the exhaust rate control module can also be used to generate airflow with other variations in the chamber or to generate a randomly varying airflow or the like.
  • the above-described exhaust rate control module can be implemented, for example, by using a programmable control device such as a single chip microcomputer.
  • the section regulating valve includes a valve body 51, an air outlet end 59 in communication with the valve body 51, and at least three discretely disposed intake ends 56 (56-1, 56-2, 56-3, and 56-4) and settings a rotatable spool 52 inside the cross-section regulating valve; wherein, the outlet end 59 is connected to an air suction device, and at least three intake ends 56 are respectively connected to the respective exhaust ports; the rotatable valve core 52 is used for The intake air rate of each of the intake ends 56 is rotated clockwise or counterclockwise with time to rotate the exhaust rate of the exhaust ports correspondingly connected to the respective intake ends 56 clockwise or counterclockwise, that is, The exhaust rate of the exhaust port correspondingly connected to each of the intake ports 56 gradually changes in a clockwise direction, or gradually changes in a counterclockwise direction, as indicated by reference numeral 54 in FIG.
  • the valve body 51 is of a cylindrical structure, and the air outlet end 59 communicates with one end surface of the cylindrical valve body 51, and a plurality of intake ends 56 (in this embodiment, 4) Each of the 56-1, 56-2, 56-3, 56-4) is in communication with the side of the cylindrical valve body 51.
  • the four intake ends 56 are preferably distributed on the circumference of the valve body 51. In practical applications, the number of the intake ends 56 may be increased or decreased as needed (minimum of 2)
  • the spool 52 is a hollow cylindrical structure that is rotatable about the central axis of the valve body 51.
  • the side of the tubular structure of the spool 52 is provided with a through hole 53 through which the intake end 56 communicates with the outlet end 59 and a certain gap 55 between the spool 52 and the valve body 51.
  • the intake end 56 directly opposite the through hole 53 can obtain the maximum intake rate, so that the exhaust port connected to the intake end 56 obtains the maximum exhaust rate, as indicated by reference numeral 57 in Fig. 8; With the rotation of the spool 52, each of the intake ports 56 obtains the maximum intake rate one by one, and accordingly, each of the exhaust ports obtains the maximum exhaust rate one by one.
  • the intake end 56 which has not been aligned with the above-mentioned through hole 53, can be indirectly communicated with the above-described outlet end 59 via the above-mentioned gap 55, thereby obtaining a relatively small intake rate; and, for each of the intake ends 56
  • the flow rate is also affected by the distance between its location and the through hole 53 in the spool 52 at that time. Taking the position of the spool 52 in FIG.
  • the intake end 56-3 is farthest from the through hole 53, so that the corresponding flow rate P3 is the smallest; and the intake end 56-1 is facing the through hole 53 at this time, so this time
  • the flow value P1 of the intake end 56-1 is at its maximum value and larger than the flow rate of the other intake ends; the flow values P2 and P4 of the remaining two intake ends 56-32 and 56-4 are between the above two between.
  • the number of the through holes 53 in the above-mentioned spool 52 is not limited to one in the embodiment, and the number of the through holes 53 can be increased as needed, thereby making the two or more intake ends 56
  • the flow rate simultaneously obtains the maximum value; and, on the basis of the plurality of through holes 53 provided in the spool 52, the respective through holes 53 are set to different cross-sectional sizes, thereby controlling the respective intake ends by the cross-sectional size of each of the through holes 53.
  • the shape of the through hole 53 described in this embodiment can be variously used as long as it can satisfy the shape of the through hole through which the fluid smoothly passes.
  • the section regulating valve further includes a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed (not shown).
  • a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed (not shown).
  • the above-described rotary drive unit can be realized by a variety of devices, such as a motor or a hydraulic motor.
  • the above-mentioned spool driving portion can be controlled by a preset computer program to control parameters such as the rotation direction and speed of the spool and the frequency of change of the rotation direction and/or the speed of the control spool, thereby satisfying different process occasions. Need to use in.
  • FIG. 9 is a schematic structural view of a second embodiment of a cross-section regulating valve provided by the present invention.
  • FIG. 9(A) is a front cross-sectional view of the cross-section regulating valve provided in the embodiment
  • FIG. 9(B) A left side view of the section regulating valve provided for this embodiment.
  • the shape of the valve body 61 is similar to that of the valve body 51 of the embodiment shown in Fig.
  • the air outlet end 67 is disposed on the cylindrical side surface of the valve body 61, and four intake ends 66 (66-1, 66-2, 66-3, and 66-4) are uniformly disposed on one end surface of the valve body 61, and the distance between each of the intake ends 66 and the center of the end face is substantially equal.
  • the spool 62 has a disc-like structure corresponding to the positions of the outlet end 67 and the intake end 66, and has a core 62 for connecting the outlet end 67 and the intake end 66.
  • Through hole 63 The distance from the through hole 63 to the rotating shaft of the spool 62 is substantially equal to the distance between the intake end 66 and the rotating shaft, so that the through hole 63 can be aligned with the respective intake ends 66 one by one when the spool 62 rotates.
  • the flow rate p of the intake port 66 can be maximized. Therefore, as the spool 62 rotates, the flow rates of the respective intake ends 66 can be maximized.
  • the spool 62 and the valve body 61 also have a certain gap 65 to allow the intake end 66 that does not reach the maximum flow value to communicate with the outlet end 67 at a small flow rate.
  • the electric motor is used as the spool driving portion 68 for driving the spool 62 to rotate in a predetermined rotational direction and speed.
  • the section regulating valve in this embodiment has the same or similar working principle as the section regulating valve shown in Fig. 8, except that the spool structure of the two and the positions of the intake end 66 and the outlet end 67 are changed. Therefore, the same pumping effect can be produced.
  • Figure 10 is a cross-sectional view showing a third section regulating valve used in the exhaust apparatus provided by the present invention.
  • the valve body 71 of the sectional regulating valve has four intake ends 76 (i.e., 76-1, 76-2, 76-3, and 76-4), and is in each intake end 76.
  • Rotating spools 72 (72-1, 72-2, 72-3, and 72-4) are provided. By controlling the rotation of each of the spools 72, the intake rates of the respective intake ports 76 can be independently adjusted, and the exhaust rates of the respective exhaust ports can be independently adjusted. Therefore, the section regulating valve shown in Fig. 10 has the same exhaust rate adjusting mode as the embodiment shown in Fig. 6, and will not be described again.
  • the embodiment of the cross-section regulating valve provided by the present invention is not limited to the above embodiment, but a proper structure of the valve body and the valve core structure which are evolved by the principle and essence of the present invention, and The valve body and the valve core can realize the same and similar functions as the above embodiments.
  • the scheme should be considered as the scope of protection of the present invention.
  • the venting apparatus provided by the present invention is capable of forming a dynamic airflow distribution in the substrate processing chamber, thereby facilitating uniform substrate processing results. Therefore, when the substrate processing chamber is subjected to the exhaust operation by the exhaust device provided by the present invention, the process gas can be more uniformly distributed over the region above the substrate, thereby facilitating more uniform substrate processing results; Moreover, since the exhaust device has a simple structure, it is not necessary to provide a complicated diaphragm mechanism in the substrate processing chamber, so that problems such as particle contamination caused by the spacer mechanism can be effectively avoided; and the row provided by the present invention The gas device is applicable and has the same exhaust effect when used in substrate processing equipment of different volumes.
  • the present invention also provides a substrate processing apparatus.
  • FIG. 11 is a system schematic diagram of a substrate processing apparatus provided by the present invention.
  • the substrate processing apparatus includes a substrate processing chamber 13 and a substrate holding portion 22 disposed in the substrate processing chamber 13, and the above-described substrate provided in the present invention is further provided on the substrate processing chamber 13.
  • the exhaust device includes exhaust ports 36 (ie, 36-1, 36-2, 36-3, and 36-4) connected to the substrate processing chamber 13, and an air extracting device (not shown). And a section regulating valve disposed between the exhaust port 36 and the air extracting device.
  • the respective intake ends 56 of the sectional regulating valves i.e., 56-1, 56-2, 56-3, and 56-4
  • the respective intake ends 56 of the sectional regulating valves are correspondingly connected to the respective exhaust ports 36.
  • a rotating air flow is formed in the substrate processing chamber 13 as the spool 52 rotates, thereby obtaining a uniform substrate processing result.
  • FIG. 12 is a schematic structural diagram of a system of a specific embodiment of a substrate processing apparatus provided by the present invention.
  • a substrate processing chamber 100 having a single layer tray 22 is used.
  • the substrate processing chamber 100 has an air inlet 80 and four exhaust ports 36 that are uniformly disposed around the substrate processing chamber 100 (36-1, 36-2, 36-3, 36- respectively). 4, only 36-1 and 36-3 are visible in the section shown in FIG. 12, wherein the air inlet 80 corresponds to a substantially central position above the tray 22, and the four exhaust ports 36 are both hooked on the tray 22. Circumference range.
  • the above four exhaust ports 36 are the exhaust ports 36 of the above-mentioned exhaust device provided by the present invention.
  • each exhaust port is provided.
  • 36 is correspondingly connected to each of the intake ends 66 of the rotary valve 200 as a sectional regulating valve (66-1, 66-2, 66-3, 66-4, respectively, only 66-1 in the section shown in Fig. 12).
  • the outlet end of the rotary valve 200 is connected to an air suction device (in the present embodiment, the air suction device uses an air pump), so that a complete air path is formed.
  • the substrate to be processed is placed at a corresponding loading position on the tray 22, and then the process gas is introduced into the chamber from the air supply port 80 of the substrate processing chamber 100, and at the same time, the air pump and the rotary valve 200 are simultaneously operated.
  • the gas after the reaction in the chamber is discharged in time.
  • the air pump continuously supplies a certain pumping rate to the air outlet end of the rotary valve 200, and the spool driving portion 68 drives the spool 62 to rotate in a certain rotation direction and rotation speed.
  • the intake end 66 When the through hole 63 in the spool 62 is aligned with a certain intake end 66 (for example, the intake end 66-1 shown in the drawing), the intake end 66 can form a larger intake rate, correspondingly
  • the exhaust port 36-1 corresponding to the intake end 66 can generate a larger exhaust rate relative to the other exhaust ports (36-2, 36-3, 36-4), thereby making the substrate
  • the gas flow rate in the processing chamber 100 toward the exhaust port 36-1 is greater than the gas flow in other directions; and as the spool 62 rotates, the airflow corresponding to each of the exhaust ports 36 in the chamber will sequentially form a maximum gas flow rate.
  • a dynamic airflow similar to rotation is formed within the chamber.
  • the pumping rate of the air pump and the direction and speed of rotation of the rotary valve 200 can be controlled in real time by the exhaust rate control module.
  • the specific control parameters can be determined according to actual needs in the process, or The experimental data was determined.
  • the exhausting device in the above-described embodiment shown in Fig. 12 is not limited thereto, and may be any one of the respective embodiments of the exhausting device provided by the above-described present invention.
  • FIG. 13 is a cross-sectional view of a substrate processing chamber having a multi-layer tray used in the substrate processing apparatus provided by the present invention.
  • a multi-layer tray 22 (four layers in the drawing, which is not limited by this number in practical use) is used for carrying the substrate to improve production efficiency.
  • an air supply passage and an exhaust gas may be provided corresponding to the positions of the respective trays.
  • the channel is as follows.
  • the multi-layer trays 22 are parallel to each other and are connected in series to the outside of the support device 93 at a distance from the central axis of the chamber.
  • the support device 93 is disposed along the central axis of the chamber, and the interior thereof is a hollow structure.
  • the air supply port 80 is disposed at the bottom, and a plurality of air supply holes 94 are disposed on the support device 93 and along the longitudinal direction thereof corresponding to the positions of the respective trays 22.
  • the inner portion of the support device 93 and the respective air supply holes 94 constitute the substrate processing device.
  • the gas supply channel correspondsly, a cylindrical inner wall 90 is disposed in the substrate processing chamber 100, and a certain gap 91 is maintained between the inner wall 90 and the outer wall of the chamber, and a plurality of through holes 92 are disposed in the inner wall 90.
  • the holes 92 and the gaps 91 collectively constitute an exhaust passage of the above substrate processing apparatus.
  • the above-described exhaust device provided by the present invention is shown by the exhaust port 36 (i.e., 36-1, 36-2, 36-3, and 36-4) disposed on the outer wall of the chamber; only the cross-sectional view shown in Fig. 13 is shown. 36-1 and 36-3) are connected to the above-described exhaust passage to generate a dynamic air flow on the surface of the multilayer pallet 22, and thereby obtain a uniform process result.
  • the present invention is not limited thereto, and for example, the air supply passage may be further provided. It is disposed around the substrate processing chamber, and correspondingly, the exhaust passage is disposed along the central axis of the substrate processing chamber.
  • Such a scheme actually uses the exhaust passage in the above embodiment as an intake passage, and uses the intake passage as an exhaust passage.
  • the above-mentioned exhaust device provided by the present invention performs the exhaust operation in the substrate processing apparatus provided by the present invention, a uniform process gas distribution can be obtained in the substrate processing chamber, and each chamber is provided. A sufficient gas supply can be obtained in the region, thereby facilitating uniform substrate processing results; and, since the above-described exhaust device provided by the present invention is not limited by the chamber volume, the substrate processing apparatus provided by the present invention can be Designed for large equipment in a variety of capacity specifications.
  • the trays involved in the above embodiments may be composed of a circular graphite body and silicon carbide attached to the surface of the graphite body.
  • the above substrate processing apparatus may be, for example, a metal organic compound chemical vapor deposition apparatus or the like.

Abstract

An exhausting method, an exhausting apparatus and a substrate processing device. The exhausting method comprises the following steps: (1) setting at least two exhausting ports for a substrate processing chamber, and enabling the exhausting rates of the exhausting ports to be separately controlled; and (2) enabling the exhausting ports to exhaust outward at different exhausting rates. The exhausting apparatus comprises at least two exhausting ports connected to a substrate processing chamber. The exhausting rates of the exhausting ports may be separately controlled. The substrate processing device comprises a substrate processing chamber and the exhausting apparatus.

Description

UP-112308-00 一种排气方法、 装置及基片处理设备  UP-112308-00 Exhaust method, device and substrate processing equipment
技术领域 Technical field
本发明涉及微电子加工技术领域， 具体地， 涉及一种排气方法、 装置以 及应用上述排气方法或装置的基片处理设备。 背景技术  The present invention relates to the field of microelectronic processing technology, and in particular to an exhaust gas method, apparatus, and substrate processing apparatus using the above-described exhaust method or apparatus. Background technique
在微电子产品的制造过程中， 需要在基片表面进行多种薄膜的制备工 艺。 其中， 有一种常用的化学气相沉积（Chemical Vapor Deposition, 以下简 称 CVD )工艺， 是利用工艺气体的化学反应而在基片表面形成所需膜层的薄 膜制备技术。 利用该工艺能够制备出结晶膜、 非结晶膜、 绝缘膜、 导电膜以 及保护膜等多种特性及用途的膜层。  In the manufacturing process of microelectronic products, various film preparation processes are required on the surface of the substrate. Among them, there is a commonly used chemical vapor deposition (CVD) process, which is a film preparation technique for forming a desired film layer on the surface of a substrate by chemical reaction of a process gas. By this process, a film layer having various properties and uses such as a crystalline film, an amorphous film, an insulating film, a conductive film, and a protective film can be prepared.
在 CVD工艺中， 工艺气体能否与基片进行充分且均匀的接触将直接决 定所制备的膜层的均匀性。  In the CVD process, whether the process gas can be sufficiently and uniformly contacted with the substrate will directly determine the uniformity of the prepared film layer.
在目前常见的 CVD设备中， 多釆用一个供气口和一个排气口使工艺气 体由供气口进入腔室并参与相应的化学反应， 反应后的副产物及未充分参与 反应的工艺气体由排气口被排出， 从而在腔室内形成稳定的气流场分布。 但 是， 这种供气和排气方案所形成的气流较为固定， 从而导致腔室内的部分区 域（如靠近供气口和排气口所在位置的腔室区域）始终有较强的气流流过， 而另一些区域则始终不能获得较为充足的气流。 上述工艺气体的流动分布不 均匀将进一步导致 CVD工艺结果不均匀。  In the current common CVD equipment, a gas supply port and an exhaust port are used to make the process gas enter the chamber from the gas supply port and participate in the corresponding chemical reaction, the by-product after the reaction and the process gas not fully participating in the reaction. It is discharged from the exhaust port to form a stable airflow field distribution within the chamber. However, the air flow formed by the air supply and exhaust scheme is relatively fixed, so that a part of the chamber (such as the chamber area near the air supply port and the exhaust port) always has a strong airflow. In other areas, there is always no adequate airflow. Inhomogeneous flow distribution of the above process gases will further result in uneven CVD process results.
为此， 日本专利文献： 特开 1994 - 349738号公报中公开了一种 CVD设 备， 该设备釆用一种复杂的基片保持部和隔板装置引导气流以试图提高工艺 气体在腔室内的分布均勾性。 但是， 由于该技术方案中的基片保持部和隔板 的结构复杂， 造成附着在该复杂机构上的薄膜容易脱落而形成颗粒污染。 并 且， 上述隔板装置的设计方案与腔室容积的关联性很大， 若将同样的隔板装 置安装在不同容积的基片处理腔室中， 则所产生的气体分配效果会有很大的 差别； 因此， 在应用于大容积的基片处理设备时， 需要重新设计并制造上述 隔板装置， 这将在一定程度上增加设备的设计成本和制造成本。 To this end, Japanese Patent Publication No. 1994-349738 discloses a CVD apparatus which uses a complicated substrate holding portion and a spacer device to guide a gas flow in an attempt to increase the distribution of a process gas in a chamber. All are hooked. However, since the structure of the substrate holding portion and the separator in the technical solution is complicated, the film attached to the complicated mechanism is easily peeled off to form particle contamination. Moreover, the design of the above-mentioned separator device has a great correlation with the volume of the chamber. If the same separator device is installed in the substrate processing chamber of different volumes, the gas distribution effect generated will be large. Difference; Therefore, when applied to a large-volume substrate processing apparatus, it is necessary to redesign and manufacture the above-described spacer device, which will increase the design cost and manufacturing cost of the device to some extent.
为此， 如何提供一种能够使工艺气体均匀分布于腔室中的各个区域的排 气方式， 就成为本领域技术人员亟待解决的技术问题。 发明内容  For this reason, how to provide an exhaust mode capable of uniformly distributing process gases in various regions in the chamber has become a technical problem to be solved by those skilled in the art. Summary of the invention
为解决上述问题， 本发明提供一种排气方法， 其能够使工艺气体均匀地 分布于基片处理腔室中的各个区域， 从而提供工艺结果的均勾性， 并且还能 适用于大型设备。  In order to solve the above problems, the present invention provides an exhausting method capable of uniformly distributing process gases in respective regions in a substrate processing chamber, thereby providing uniformity of process results, and is also applicable to large-scale equipment.
为解决上述问题， 本发明提供一种排气装置， 其同样能够使工艺气体均 匀地分布于基片处理腔室中的各个区域， 从而提供工艺结果的均勾性， 并且 还能适用于大型设备。  In order to solve the above problems, the present invention provides an exhaust device which is also capable of uniformly distributing process gases in various regions in a substrate processing chamber, thereby providing uniformity of process results, and is also applicable to large equipment. .
为解决上述问题， 本发明还提供一种应用上述排气方法或装置的基片处 理设备， 其同样能够使工艺气体均匀地分布于基片处理腔室中的各个区域， 从而提供工艺结果的均匀性， 并且在设备大型化改造时无需对排气方案进行 重新设计。  In order to solve the above problems, the present invention also provides a substrate processing apparatus using the above-described exhaust method or apparatus, which is also capable of uniformly distributing process gases in respective regions in a substrate processing chamber, thereby providing uniform process results. Sex, and there is no need to redesign the exhaust solution when the equipment is being remodeled.
为此，本发明提供一种排气方法，用于配合基片处理腔室进行排气操作， 其包括下述步骤： 10 )为基片处理腔室设置至少两个排气口， 并使各个排气 口的排气速率可被单独控制； 20 )使至少两个排气口以不同的排气速率向外 排气。  To this end, the present invention provides an exhaust method for venting a substrate processing chamber, the method comprising the steps of: 10) providing at least two exhaust ports for the substrate processing chamber, and The exhaust rate of the exhaust port can be individually controlled; 20) the at least two exhaust ports are exhausted outward at different exhaust rates.
其中， 在步骤 20 ) 中， 使各个排气口的排气速率随时间变化。  Wherein, in step 20), the exhaust rate of each exhaust port is varied with time.
其中， 在步骤 10 ) 中， 排气口的数量至少为三个。  Wherein, in step 10), the number of exhaust ports is at least three.
其中， 在步骤 20 )中， 使至少三个排气口中的至少一个排气口的排气速 率大于其它排气口的排气速率。  Wherein, in step 20), the exhaust rate of at least one of the at least three exhaust ports is made larger than the exhaust rate of the other exhaust ports.
其中， 在步骤 20 )中， 使其中一个排气口的排气速率大于其它排气口的 排气速率， 并且使其它排气口的排气速率相等。 其中， 在步骤 20 ) 中， 使其中一个排气口的排气速率大于其它排气口； 同时， 其它排气口的排气速率的设置规则为： 距离排气速率最大的那个排气 口越远的排气口的排气速率越小。 Wherein, in step 20), the exhaust rate of one of the exhaust ports is made larger than the exhaust rate of the other exhaust ports, and the exhaust rates of the other exhaust ports are equal. Wherein, in step 20), the exhaust rate of one of the exhaust ports is made larger than the other exhaust ports; meanwhile, the exhaust gas rate of the other exhaust ports is set according to the rule: the exhaust port having the largest exhaust gas velocity is The exhaust rate of the far exhaust port is smaller.
其中， 在步骤 20 )中， 按照各个排气口沿顺时针或逆时针方向的排列顺 序而使各个排气口依次获得最大的排气速率。  Wherein, in step 20), the respective exhaust ports are sequentially obtained with the maximum exhaust rate in accordance with the order of the respective exhaust ports in the clockwise or counterclockwise direction.
其中， 在步骤 20 ) 中， 使各个排气口的排气速率连续变化； 或者， 使各 个所述排气口的排气速率每隔预定时长变化一次。  Wherein, in step 20), the exhaust rates of the respective exhaust ports are continuously changed; or, the exhaust rates of the respective exhaust ports are changed once every predetermined time period.
其中， 预定时长为定值或变量。  Wherein, the predetermined duration is a fixed value or a variable.
此外， 本发明还提供一种排气装置， 用于配合基片处理腔室进行排气操 作， 该排气装置包括连接至基片处理腔室的至少两个排气口， 其中， 各个排 气口的排气速率可被单独控制。  In addition, the present invention also provides an exhaust device for performing an exhaust operation in cooperation with a substrate processing chamber, the exhaust device including at least two exhaust ports connected to the substrate processing chamber, wherein each exhaust The exhaust rate of the port can be controlled separately.
其中， 排气口的数量至少为三个。  Among them, the number of exhaust ports is at least three.
其中， 各个排气口的单位面积的气体流速和 /或排气截面积可被调节， 通 过分别调节各个排气口的单位面积的气体流速和 /或排气截面积而对排气口 的排气速率进行调节。  Wherein, the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port may be adjusted, and the exhaust port row is adjusted by separately adjusting the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port. The gas rate is adjusted.
其中， 各个排气排气口分别连接至各自专用的抽气装置， 通过调节各个 抽气装置的抽气速率而对各个排气口的排气速率进行调节。  Wherein, each of the exhaust gas exhaust ports is respectively connected to a dedicated exhausting device, and the exhaust gas velocity of each of the exhaust ports is adjusted by adjusting the pumping rate of each of the exhausting devices.
其中， 各个排气口分别通过独立的排气管路而连接至同一个抽气装置 上， 并且各个排气管路中均设置有截面调节阀， 通过调节各个排气管路中的 截面调节阀而对各个排气口的排气截面积进行调节， 以对各个排气口的排气 速率进行调节。  Wherein, each exhaust port is connected to the same air suction device through a separate exhaust line, and each of the exhaust lines is provided with a cross-section regulating valve, by adjusting a sectional regulating valve in each exhaust line The exhaust cross-sectional area of each exhaust port is adjusted to adjust the exhaust rate of each exhaust port.
其中， 各个排气口分别通过独立的排气管路而连接至各自专用的抽气装 置， 并且在各个排气管路中均设置有截面调节阀； 通过控制各个抽气装置的 抽气速率和 /或调节截面调节阀而对各个排气口的单位面积的气体流速和 /或 排气截面积进行调节， 以对各个排气口的排气速率进行调节。  Wherein, each of the exhaust ports is connected to a dedicated exhaust device through a separate exhaust line, and a cross-section regulating valve is disposed in each exhaust line; by controlling the pumping rate of each pumping device and / or adjusting the cross-section regulating valve to adjust the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port to adjust the exhaust rate of each exhaust port.
其中， 还包括排气速率控制模块， 用于控制各个排气口以不同的排气速 率向外排气， 并且使各个排气口的排气速率随时间变化。 The exhaust rate control module is further configured to control each exhaust port with different exhaust speeds The rate is vented outward and the exhaust rate of each vent varies over time.
其中， 排气速率控制模块按照顺时针或逆时针方向依次将所述排气口的 排气速率控制为最大值。  Wherein, the exhaust rate control module sequentially controls the exhaust rate of the exhaust port to a maximum value in a clockwise or counterclockwise direction.
其中， 截面调节阀包括一个出气端、 至少三个分散设置的进气端和设置 于截面调节阀内部的可旋转的阀芯； 其中， 出气端与一抽气装置相连接， 至 少三个进气端分别与各个排气口对应连接； 可旋转的阀芯用于使所述至少三 使所述至少三
Figure imgf000006_0001
),以使与各个 进气端对应连接的排气口的排气速率产生相应变化。 Wherein, the section regulating valve comprises an outlet end, at least three dispersed inlet ends and a rotatable spool disposed inside the section regulating valve; wherein the outlet end is connected to an air extracting device, and at least three intake air The ends are respectively connected to the respective exhaust ports; the rotatable spool is used to make the at least three of the at least three
Figure imgf000006_0001
) to cause a corresponding change in the exhaust rate of the exhaust ports correspondingly connected to the respective intake ends.
其中， 还包括阀芯驱动部， 用以驱动阀芯按照预定的旋转方向和速度进 行旋转。  There is further included a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed.
另外， 本发明还提供一种基片处理设备， 包括基片处理腔室和设置于基 片处理腔室内的基片保持部，其还包括权利要求上述本发明提供的排气装置， 用以在基片上方形成均匀分布的气流。  In addition, the present invention also provides a substrate processing apparatus including a substrate processing chamber and a substrate holding portion disposed in the substrate processing chamber, further comprising the exhaust device provided by the present invention as claimed in the A uniformly distributed airflow is formed over the substrate.
其中， 基片保持部包括至少两层沿基片处理腔室高度方向排列的托盘结 构； 在基片处理腔室内， 对应于各个托盘的位置而设置有供气通道和排气通 道， 排气装置与排气通道相连接。  Wherein the substrate holding portion includes at least two layers of tray structures arranged along the height direction of the substrate processing chamber; in the substrate processing chamber, an air supply passage and an exhaust passage are provided corresponding to the positions of the respective trays, and the exhausting device Connected to the exhaust passage.
其中， 供气通道沿基片处理腔室的中心轴而设置， 相应的， 排气通道设 置于基片处理腔室的四周。  Wherein, the gas supply passage is disposed along a central axis of the substrate processing chamber, and correspondingly, the exhaust passage is disposed around the substrate processing chamber.
其中， 供气通道设置于基片处理腔室的四周， 相应的， 排气通道沿基片 处理腔室的中心轴而设置。  Wherein, the air supply passage is disposed around the substrate processing chamber, and correspondingly, the exhaust passage is disposed along a central axis of the substrate processing chamber.
其中， 基片处理设备为金属有机化合物化学气相淀积设备。  The substrate processing apparatus is a metal organic compound chemical vapor deposition apparatus.
本发明具有下述有益效果：  The invention has the following beneficial effects:
本发明所提供的排气方法包括： 为基片处理腔室设置至少两个排气速率 可被单独控制的排气口； 并使各个排气口以不同的排气速率向外排气。 由此 可知， 应用本发明提供的排气方法进行排气操作时， 借助至少两个排气口同 时进行排气， 同时根据实际气流分布情况而随时对各个排气口的排气速率进 行调节。 因此， 应用本发明提供的排气方法能够使工艺气体更加均匀地分布 于整个基片处理腔室的各个区域， 从而使腔室内的各个区域均能获得充足的 气流供应， 进而可有效提高基片处理工艺的均匀性。 而且， 应用上述本发明 提供的排气方法进行排气操作时与基片处理腔室的容积没有直接关系， 也无 需对基片处理腔室的结构做出任何改变或者在基片处理腔室内安装复杂的隔 板装置； 因此， 本发明提供的排气方法在应用于大型的基片处理设备时， 同 样能够有效提供工艺气体分布的均匀性。 The venting method provided by the present invention comprises: arranging at least two exhaust ports for which the exhaust gas rate can be individually controlled for the substrate processing chamber; and causing the respective exhaust ports to be exhausted outward at different exhaust rates. It can be seen that when the exhausting method provided by the present invention is used for the exhausting operation, at least two exhaust ports are The exhaust gas is exhausted, and the exhaust rate of each exhaust port is adjusted at any time according to the actual airflow distribution. Therefore, the exhaust method provided by the present invention can make the process gas more evenly distributed throughout the entire processing area of the substrate processing chamber, so that sufficient airflow can be obtained in various regions of the chamber, thereby effectively improving the substrate. Process uniformity. Moreover, the venting operation provided by the above-described present invention does not directly relate to the volume of the substrate processing chamber during the venting operation, nor does it require any change to the structure of the substrate processing chamber or installation in the substrate processing chamber. A complicated separator device; therefore, the exhaust gas method provided by the present invention can effectively provide uniformity of process gas distribution when applied to a large-sized substrate processing apparatus.
本发明提供的排气装置借助设置在基片处理腔室上的至少两个排气口 进行排气操作， 能够使腔室内的工艺气体按照多个流向进行分布； 并且通过 单独控制各个排气口的排气速率还可实现对气流分布流量的调节， 从而使腔 室内各个区域均可获得充足的气流供应。 因此， 应用本发明提供的排气装置 进行排气时能够使工艺气体更加均勾地分布于整个基片处理腔室的内部空 间， 从而有效提高基片处理工艺的均匀。 而且， 应用上述本发明提供的排气 装置进行排气操作时与基片处理腔室的容积没有直接关系， 也无需对基片处 理腔室的结构做出任何改变或者在基片处理腔室内安装复杂的隔板装置； 因 此， 本发明提供的排气装置在应用于大型的基片处理设备时， 同样能够有效 提供工艺气体分布的均匀性， 进而提高工艺结果的均匀性。  The exhaust device provided by the present invention performs an exhaust operation by at least two exhaust ports provided on the substrate processing chamber, so that the process gas in the chamber can be distributed according to a plurality of flow directions; and each exhaust port is separately controlled The exhaust rate also allows for adjustment of the flow distribution of the airflow so that sufficient airflow is available in all areas of the chamber. Therefore, when the exhaust device provided by the present invention is exhausted, the process gas can be more evenly distributed throughout the internal space of the substrate processing chamber, thereby effectively improving the uniformity of the substrate processing process. Moreover, the use of the venting apparatus provided by the present invention described above does not directly relate to the volume of the substrate processing chamber during the venting operation, nor does it require any change to the structure of the substrate processing chamber or installation in the substrate processing chamber. The complicated separator device; therefore, the exhaust device provided by the present invention can effectively provide the uniformity of the distribution of the process gas when applied to a large-sized substrate processing apparatus, thereby improving the uniformity of the process results.
本发明提供的基片处理设备包括基片处理腔室， 并借助上述本发明提供 的排气方法或上述本发明提供的排气装置对基片处理腔室进行排气操作。 因 此， 本发明提供的基片处理设备同样能够在基片上方形成均匀分布的气流， 进而获得均匀的基片加工结果； 并且， 本发明提供的基片处理设备在进行扩 容等大型化设计时仍可沿用相同的排气设计方案。 附图说明  The substrate processing apparatus provided by the present invention comprises a substrate processing chamber, and the substrate processing chamber is vented by the above-described venting method provided by the present invention or the above-described venting apparatus provided by the present invention. Therefore, the substrate processing apparatus provided by the present invention can also form a uniformly distributed airflow over the substrate, thereby obtaining a uniform substrate processing result; and the substrate processing apparatus provided by the present invention is still in a large-scale design such as expansion. The same exhaust design can be used. DRAWINGS
图 1为本发明提供的排气方法的流程示意图; 图 2为应用本发明提供的排气方法的基片处理腔室的结构示意图； 图 3为本发明提供的排气装置第一种具体实施例的原理框图； 1 is a schematic flow chart of an exhaust method provided by the present invention; 2 is a schematic structural view of a substrate processing chamber to which an exhaust method provided by the present invention is applied; FIG. 3 is a schematic block diagram of a first embodiment of an exhaust apparatus provided by the present invention;
图 4为图 3所示实施例的设备结构示意图；  4 is a schematic structural diagram of an apparatus of the embodiment shown in FIG. 3;
图 5为本发明提供的排气装置第二种具体实施例的原理框图；  Figure 5 is a schematic block diagram of a second embodiment of the exhaust device provided by the present invention;
图 6为本发明提供的排气装置第三种具体实施例的原理框图；  Figure 6 is a schematic block diagram of a third embodiment of the exhaust device provided by the present invention;
图 7为本发明提供的排气装置第四种具体实施例的原理框图；  Figure 7 is a schematic block diagram of a fourth embodiment of the exhaust device provided by the present invention;
图 8为本发明提供的排气装置中所釆用的第一种截面调节阀的剖视图； 图 9为本发明提供的排气装置中所釆用的第二种截面调节阀的剖视图； 图 10为本发明提供的排气装置中所釆用的第三种截面调节阀的剖视图； 图 11为本发明提供的基片处理设备的结构示意图；  Figure 8 is a cross-sectional view showing a first type of sectional regulating valve used in the exhausting device of the present invention; Figure 9 is a cross-sectional view showing a second type of sectional regulating valve used in the exhausting device provided by the present invention; A cross-sectional view of a third cross-section regulating valve used in the exhaust device provided by the present invention; FIG. 11 is a schematic structural view of a substrate processing apparatus provided by the present invention;
图 12为本发明提供的基片处理设备一个具体实施例的***结构示意图； 以及  12 is a schematic structural diagram of a system of a specific embodiment of a substrate processing apparatus according to the present invention;
图 13 为本发明提供的基片处理设备中所釆用的一种具有多层托盘的基 片处理腔室的剖视图。 具体实施方式  Figure 13 is a cross-sectional view showing a substrate processing chamber having a multi-layer tray used in the substrate processing apparatus of the present invention. detailed description
为使本领域的技术人员更好地理解本发明的技术方案， 下面结合附图对 本发明提供的排气方法、 装置及基片处理设备进行详细描述。  In order to enable those skilled in the art to better understand the technical solutions of the present invention, the exhausting method, apparatus and substrate processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
本发明提供的排气方法用于配合基片处理腔室进行排气操作。 请参阅图 1 , 为本发明提供的排气方法的流程示意图。  The venting method provided by the present invention is used in conjunction with a substrate processing chamber for venting operations. Please refer to FIG. 1 , which is a schematic flow chart of an exhaust method provided by the present invention.
该方法包括下述步骤： 10 )为基片处理腔室设置至少两个排气口， 并使 各个排气口的排气速率可被单独控制； 20 )使至少两个排气口以不同的排气 速率向外排气。 这样， 借助上述至少两个可被单独控制排气速率的排气口， 能够在基片处理腔室内形成多个流向的气流； 而且， 由于可对各个排气口的 排气速率进行单独调节， 因而可根据实际工艺中的基片处理结果而增大或减 小某个排气口的排气速率， 以改变由该排气口所形成的气流的流量， 从而增 加或减少处于该气流路径中的基片所获得的气体供应量， 并最终获得较为均 匀的基片处理结果。 基于上述优点， 釆用本发明提供的排气方法进行排气操 作时无需再设置复杂的隔板结构， 从而可有效避免因隔板结构所造成的颗粒 污染问题。 此外， 对于各种容积的基片处理腔室， 均可釆用本发明提供的排 气方法进行排气操作， 并且在各基片处理腔室中均能产生较为均匀的气流分 布。 The method comprises the steps of: 10) providing at least two exhaust ports for the substrate processing chamber, and allowing the exhaust rates of the respective exhaust ports to be individually controlled; 20) making the at least two exhaust ports different The exhaust rate is exhausted outward. Thus, by means of the above-mentioned at least two exhaust ports which can be individually controlled to control the exhaust rate, a plurality of flow directions can be formed in the substrate processing chamber; and, since the exhaust rates of the respective exhaust ports can be individually adjusted, Therefore, according to the substrate processing result in the actual process, the exhaust rate of a certain exhaust port can be increased or decreased to change the flow rate of the airflow formed by the exhaust port, thereby increasing The gas supply obtained by the substrate in the gas flow path is increased or decreased, and a relatively uniform substrate treatment result is finally obtained. Based on the above advantages, it is not necessary to provide a complicated separator structure when performing the exhaust operation by the exhaust method provided by the present invention, so that the problem of particle contamination caused by the separator structure can be effectively avoided. In addition, for various volume substrate processing chambers, the venting method provided by the present invention can be used for venting operations, and a relatively uniform gas flow distribution can be produced in each of the substrate processing chambers.
在一些具体实施例中， 为了获得更加均勾的气流分布效果， 在步骤 20 ) 中， 可以使各个排气口的排气速率随时间变化。 这样， 能够使腔室内形成动 态的气流， 该动态的气流分布可以表现为沿腔室内至少两个方向的且随时间 而产生强弱变化的气流分布； 或者表现为随机地出现在腔室内任意方向的气 流分布； 以及优选地， 在腔室内沿顺时针或逆时针方向旋转的气流分布等。 具体请参阅下述各实施例。  In some embodiments, in order to achieve a more uniform airflow distribution effect, in step 20), the exhaust rate of each of the exhaust ports may be varied over time. In this way, a dynamic airflow can be formed in the chamber, and the dynamic airflow distribution can be expressed as a distribution of airflow that changes in at least two directions along the chamber and that changes in intensity over time; or appears to appear randomly in any direction in the chamber. Airflow distribution; and preferably, a distribution of airflow that rotates in a clockwise or counterclockwise direction within the chamber, and the like. Please refer to the following embodiments for details.
在本发明提供的排气方法的一个具体实施例的步骤 10 )中， 基片处理腔 室的排气口的数量为至少三个。 通常， 将上述至少三个排气口分散地设置在 腔室的不同位置上， 并且为了使工艺气体在腔室内分布均匀， 应尽可能地使 各个排气口所产生的气流能够覆盖基片处理腔室的所有区域。  In step 10) of one embodiment of the venting method provided by the present invention, the number of venting ports of the substrate processing chamber is at least three. Generally, the at least three exhaust ports are dispersedly disposed at different positions of the chamber, and in order to make the process gas evenly distributed in the chamber, the airflow generated by each exhaust port should be covered as much as possible to cover the substrate processing. All areas of the chamber.
在本实施例的步骤 20 )中， 使上述至少三个排气口中的至少一个的排气 速率大于其它排气口的排气速率，并且使各个排气口的排气速率随时间变化。 这样， 即可在基片处理腔室内形成旋转的气流， 从而使基片的周向和径向均 可获得较为均匀的工艺气体分布。  In the step 20) of the present embodiment, the exhaust rate of at least one of the at least three exhaust ports is made larger than the exhaust rate of the other exhaust ports, and the exhaust rate of each of the exhaust ports is varied with time. Thus, a swirling gas flow can be formed in the substrate processing chamber so that a relatively uniform process gas distribution can be obtained both in the circumferential direction and in the radial direction of the substrate.
请参阅图 2, 为应用本发明提供的排气方法的基片处理腔室的结构示意 图。 如图所示， 在基片处理腔室周围设置有四个排气口 （36-1、 36-2、 36-3 和 36-4 ), 供气口 23位于腔室中心。 在工艺过程中， 使四个排气口 （36-1、 36-2、 36-3和 36-4 ) 中的一个的排气速率最大（排气速率由图中 E表示）， 并使其他三个排气口的排气速率大致相等； 并且， 使上述最大排气速率 E1 在各个排气口之间按照一定的规则移动， 即， 按照一定规则使四个排气口 ( 36-1、 36-2、 36-3和 36-4 ) 中的一个的排气速率最大， 从而形成动态的气 流分布。 容易理解的是， 作为本实施例的一种极端的情况， 还可以使其它三 个排气口的排气速率为零。 Referring to FIG. 2, a schematic structural view of a substrate processing chamber for an exhaust method provided by the present invention. As shown, four exhaust ports (36-1, 36-2, 36-3, and 36-4) are disposed around the substrate processing chamber, and the gas supply port 23 is located at the center of the chamber. During the process, the exhaust rate of one of the four exhaust ports (36-1, 36-2, 36-3, and 36-4) is maximized (exhaust rate is indicated by E in the figure), and other The exhaust rates of the three exhaust ports are substantially equal; and, the maximum exhaust rate E1 is moved between the respective exhaust ports according to a certain rule, that is, four exhaust ports are made according to certain rules. One of (36-1, 36-2, 36-3, and 36-4) has the highest exhaust rate, thereby forming a dynamic airflow distribution. It is easily understood that, as an extreme case of the embodiment, the exhaust rates of the other three exhaust ports can be made zero.
当然， 在实际应用中， 还可以使其中一个排气口的排气速率大于其它排 气口， 同时使其它排气口的排气速率按照下述规则设置， 即， 按照与上述排 气速率最大的那个排气口之间的距离远近程度来设置排气口的排气速率， 具 体为， 距离排气速率最大的那个排气口越远的排气口的排气速率越小。 也就 是说 ,使各个排气口的排气速率由上述排气速率最大的排气口开始逐渐递减 , 从而使气流得以整体性地且更加平稳地变化， 并最终获得更加均勾的基片处 理结果。  Of course, in practical applications, it is also possible to make one of the exhaust ports have a higher exhaust rate than the other exhaust ports, and at the same time, the exhaust rates of the other exhaust ports are set according to the following rules, that is, according to the above exhaust rate. The distance between the exhaust ports is set to a close distance to set the exhaust rate of the exhaust port. Specifically, the farther away from the exhaust port where the exhaust rate is the largest, the exhaust rate of the exhaust port is smaller. That is to say, the exhaust rate of each exhaust port is gradually decreased by the exhaust port having the largest exhaust rate, so that the air flow can be changed integrally and more smoothly, and finally a more uniform substrate processing is obtained. result.
容易理解的是， 在设置好各个排气口的排气速率之后， 还可以按照顺时 针或逆时针方向所示顺序使各个排气口依次获得最大的排气速率， 从而使基 片处理腔室内形成旋转的气流， 进而获得更加均匀的工艺结果。 具体地， 要 实现上述旋转例如可以釆用下述方式： 按照顺时针或逆时针方向所示顺序使 各排气口的排气速率连续变化以形成上述旋转； 或者， 按照顺时针或逆时针 方向所示顺序使各个排气口的排气速率每隔预定时长变化一次以形成旋转。 其中， 上述预定时长可以为定值， 也可以为变量； 从而使上述旋转为勾速旋 转或变速旋转或变加速旋转。 当上述预定时长为定值时， 则在基片处理腔室 内将形成匀速变化的气流； 而当上述预定时长为随时间变化的变量时， 则基 片处理腔室内将形成变速或变加速运动的气流。 在实际工艺中， 对于具体的 预定时长的长短及排气速率的大小等参数均可根据实际工艺需要或实验测定 而进行灵活设置， 并可随时进行调整。  It is easy to understand that after setting the exhaust rate of each exhaust port, the exhaust ports can be sequentially obtained in the order of clockwise or counterclockwise direction to obtain the maximum exhaust rate, thereby making the substrate processing chamber A rotating gas stream is formed, which in turn results in a more uniform process. Specifically, to achieve the above rotation, for example, the following manner may be employed: continuously changing the exhaust rate of each exhaust port in the order shown in the clockwise or counterclockwise direction to form the above rotation; or, in a clockwise or counterclockwise direction The sequence shown changes the exhaust rate of each exhaust port every predetermined time period to form a rotation. The predetermined duration may be a fixed value or a variable; thereby causing the rotation to be a hook speed rotation or a speed change rotation or an acceleration rotation. When the predetermined duration is a constant value, a uniform flow of airflow will be formed in the substrate processing chamber; and when the predetermined duration is a variable with time, the shifting or accelerating motion will be formed in the substrate processing chamber. airflow. In the actual process, the parameters such as the length of the specific predetermined length and the size of the exhaust rate can be flexibly set according to actual process requirements or experimental measurements, and can be adjusted at any time.
需要指出的是， 上述各实施例仅仅是本发明提供的排气方法的示例性的 或优选的实施方式， 本领域的技术人员在上述实施方式的基础上， 能够对其 各个步骤做出多种变型和改进。 例如， 可以使各个排气口的排气速率随时间 进行随机的或跳跃式的变化等等； 总之， 所有基于本发明的精神和实质而做 出的、 能够在基片处理腔室内形成动态气流分布的技术方案， 均应视为本发 明的保护范围。 It should be noted that the above embodiments are merely exemplary or preferred embodiments of the exhaust method provided by the present invention, and those skilled in the art can make various steps for each step based on the above embodiments. Variants and improvements. For example, the exhaust rate of each exhaust port can be randomly or jumped over time, etc.; in summary, all based on the spirit and essence of the present invention The technical solutions that can form a dynamic airflow distribution in the substrate processing chamber should be considered as the protection scope of the present invention.
由上述描述可知， 利用本发明提供的排气方法能够使基片处理腔室中的 各个区域均获得充足的气流供应， 从而提高基片处理结果的均匀性； 而且， 由于上述排气方法简单易行，不需要在基片处理腔室内设置复杂的隔板机构， 从而可有效避免因隔板机构所带来的颗粒污染等问题； 并且， 本发明提供的 排气方法可适用于不同容积的基片处理设备并具有同样的排气效果。  It can be seen from the above description that the exhaust method provided by the present invention can obtain sufficient airflow supply in each region in the substrate processing chamber, thereby improving the uniformity of the substrate processing result; and, because the above-described exhaust method is simple and easy Therefore, it is not necessary to provide a complicated spacer mechanism in the substrate processing chamber, thereby effectively avoiding problems such as particle contamination caused by the spacer mechanism; and the exhaust method provided by the present invention can be applied to bases of different volumes. The sheet processing equipment has the same exhaust effect.
作为另一种技术方案， 本发明还提供一种排气装置， 其同样用于配合基 片处理腔室进行排气操作。 该排气装置包括连接至基片处理腔室的至少两个 排气口， 其中， 各个排气口的排气速率可被单独控制。 这样， 借助上述至少 两个可被单独控制排气速率的排气口， 能够在基片处理腔室内形成多个气流 方向， 并且可根据需要而实时地调节各个气流方向的流量， 从而使腔室内的 各个区域均可获得充足的气流， 进而提高工艺结果的均勾性。 而且， 釆用本 发明提供的排气装置进行排气操作时不需要设置复杂的隔板结构， 从而可有 效避免因隔板结构所造成的颗粒污染问题。 并且， 对于各种容积的基片处理 腔室， 均可釆用本发明提供的排气装置进行排气操作， 且在各基片处理腔室 中均能产生较为均匀的气流分布。  As another technical solution, the present invention also provides an exhaust device which is also used for the exhaust operation of the substrate processing chamber. The venting means includes at least two venting ports connected to the substrate processing chamber, wherein the venting rates of the respective venting ports can be individually controlled. In this way, by means of the above-mentioned at least two exhaust ports which can be separately controlled to control the exhaust rate, a plurality of airflow directions can be formed in the substrate processing chamber, and the flow rates of the respective airflow directions can be adjusted in real time as needed, thereby making the chamber Sufficient airflow can be obtained in each area to improve the uniformity of the process results. Moreover, it is not necessary to provide a complicated partition structure when performing the exhaust operation by the exhaust device provided by the present invention, so that the problem of particle contamination caused by the partition structure can be effectively avoided. Moreover, for various volume substrate processing chambers, the venting operation provided by the present invention can be used for venting operations, and a relatively uniform gas flow distribution can be produced in each of the substrate processing chambers.
请一并参阅图 3和图 4 , 其中， 图 3为本发明提供的排气装置第一种具 体实施例的原理框图； 图 4为图 3所示实施例的设备结构示意图。如图所示， 本实施例中的排气装置包括设置于基片处理腔室 13侧壁上的四个排气口 36 (即， 36-1、 36-2、 36-3和 36-4 ), 且各个排气口 36分别连接有专用的独立 抽气装置，通过调节各个抽气装置的抽气速率而对各个排气口 36的排气速率 进行调节。 如图 4所示， 上述抽气装置例如可以釆用抽气泵， 但本发明并不 限于此， 也可以釆用其他形式的抽气装置。 本实施例中， 由于在腔室周围均 匀地设置有四个排气口， 各排气口均连接一个抽气泵， 因此， 当按照顺时针 方向或逆时针方向所示顺序依次控制这四个抽气泵的抽气速率并使其渐次增 大时， 即可使腔室内形成旋转的动态气流分布。 3 and FIG. 4, wherein FIG. 3 is a schematic block diagram of a first embodiment of the exhaust apparatus provided by the present invention; and FIG. 4 is a schematic structural view of the apparatus of the embodiment shown in FIG. As shown, the venting apparatus of this embodiment includes four exhaust ports 36 (i.e., 36-1, 36-2, 36-3, and 36-4) disposed on the side walls of the substrate processing chamber 13. And each of the exhaust ports 36 is connected with a dedicated independent air extracting device, and the exhaust rate of each of the exhaust ports 36 is adjusted by adjusting the pumping rate of each of the air extracting devices. As shown in Fig. 4, the air extracting device may be, for example, an air pump, but the present invention is not limited thereto, and other types of air extracting devices may be used. In this embodiment, since four exhaust ports are uniformly disposed around the chamber, each of the exhaust ports is connected to an air pump, and therefore, the four pumpings are sequentially controlled in the order shown in the clockwise direction or the counterclockwise direction. Pumping rate of the air pump and increasing it gradually When large, a dynamic dynamic airflow distribution can be formed in the chamber.
需要说明的是， 要形成上述旋转气流， 只要满足在腔室周围分散地设置 至少三个排气口的条件即可， 因此， 排气口的数量并非仅限于图 4中所示的 四个， 而是也可以釆用三个、 五个或者甚至更多个排气口， 并且这些同样属 于本发明的保护范围。  It should be noted that, in order to form the above-described swirling airflow, the condition that at least three exhaust ports are dispersedly disposed around the chamber is satisfied, and therefore, the number of the exhaust ports is not limited to four as shown in FIG. Instead, three, five or even more vents can be used, and these are also within the scope of the invention.
请参阅图 5 , 为本发明提供的排气装置第二种具体实施例的原理框图。 如图所示， 本实施例中， 在上述图 3和图 4所示实施例的基础上， 在各个排 气口与抽气装置之间的各条管路中均设置有独立的截面调节阀， 这样， 通过 调节各个排气管路中的截面调节阀而对各个排气口的排气截面积进行调节， 进而对各个排气口的排气速率进行调节。 当然，对于本实施例中的排气装置， 要实现对各个排气口的排气速率进行调节还可以通过同时调节截面调节阀及 各个抽气装置的抽气速率来实现。  Please refer to FIG. 5 , which is a schematic block diagram of a second embodiment of an exhaust device provided by the present invention. As shown in the figure, in the embodiment, on the basis of the embodiments shown in FIG. 3 and FIG. 4, independent cross-section regulating valves are disposed in each of the pipelines between the exhaust ports and the air extracting device. In this way, the exhaust cross-sectional area of each exhaust port is adjusted by adjusting the cross-section regulating valve in each exhaust line, and the exhaust rate of each exhaust port is adjusted. Of course, with the exhaust device of the present embodiment, it is also possible to adjust the exhaust rate of each of the exhaust ports by simultaneously adjusting the cross-sectional regulating valve and the pumping rate of each of the exhausting devices.
请参阅图 6, 为本发明提供的排气装置第三种具体实施例的原理框图。 本实施例中， 使各个排气口分别通过独立的排气管路而连接至同一个抽气装 置上， 并且各个排气管路中均设置有截面调节阀， 通过调节各个排气管路中 的截面调节阀而对各个排气口的排气截面积进行调节， 以对各个排气口的排 气速率进行调节。  Please refer to FIG. 6, which is a schematic block diagram of a third embodiment of the exhaust device provided by the present invention. In this embodiment, each of the exhaust ports is connected to the same air suction device through separate exhaust pipes, and each of the exhaust pipes is provided with a cross-section regulating valve, which is adjusted in each exhaust pipe. The cross-section regulating valve adjusts the exhaust cross-sectional area of each exhaust port to adjust the exhaust rate of each exhaust port.
请参阅图 7 , 为本发明提供的排气装置第四种具体实施例的原理框图。 本实施例与图 6所示的实施例的区别仅在于， 将所有排气口统一连接至同一 个截面调节阀， 从而通过该截面调节阀对各个排气口的排气速率进行统一控 制。  Please refer to FIG. 7 , which is a schematic block diagram of a fourth embodiment of an exhaust device provided by the present invention. The present embodiment differs from the embodiment shown in Fig. 6 only in that all the exhaust ports are uniformly connected to the same sectional regulating valve, whereby the exhaust rate of each exhaust port is uniformly controlled by the sectional regulating valve.
容易理解的是， 在本发明提供的排气装置的各个实施例中， 其目的均是 通过调节各个排气口的单位面积的气体流速和 /或排气截面积来达到调节各 个排气口的排气速率的目的； 进而通过对各个排气口的排气速率进行合理设 置并使之随时间进行动态变化来使基片处理腔室内产生动态变化的气流分 布。 优选地， 可以设置专用的排气速率控制模块来控制各个排气口的排气速 率， 从而使各个排气口以不同的排气速率向外排气， 并且使各个排气口的排 气速率随时间变化。 具体地， 借助该排气速率控制模块能够使各个排气口的 排气速率按照该排气口沿顺时针方向或逆时针方向在这些排气口中的排列顺 序而依次达到最大值， 换言之， 该排气速率控制模块能够沿顺时针或逆时针 方向依次将所述排气口的排气速率控制为最大值， 从而使基片处理腔室内形 成沿顺时针或逆时针方向旋转的旋转气流； 当然， 还可借助该排气速率控制 模块在腔室内产生具有其他变化规律的气流或者产生随机变化的气流等。 在 实际应用中， 上述排气速率控制模块例如可以釆用单片机等可编程控制装置 来实现。 It will be readily understood that in various embodiments of the exhaust apparatus provided by the present invention, the purpose is to adjust the respective exhaust ports by adjusting the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port. The purpose of the exhaust rate; and in turn, a dynamically varying airflow distribution is created within the substrate processing chamber by rationally setting the exhaust rates of the various exhaust ports and dynamically changing them over time. Preferably, a dedicated exhaust rate control module can be provided to control the exhaust speed of each exhaust port The rate is such that each of the exhaust ports is exhausted outward at a different exhaust rate and the exhaust rate of each of the exhaust ports is varied over time. Specifically, the exhaust rate control module can sequentially increase the exhaust rate of each exhaust port according to the order of the exhaust ports in the clockwise direction or the counterclockwise direction in the exhaust ports, in other words, The exhaust rate control module can sequentially control the exhaust rate of the exhaust port to a maximum value in a clockwise or counterclockwise direction, thereby forming a swirling airflow that rotates in a clockwise or counterclockwise direction in the substrate processing chamber; The exhaust rate control module can also be used to generate airflow with other variations in the chamber or to generate a randomly varying airflow or the like. In practical applications, the above-described exhaust rate control module can be implemented, for example, by using a programmable control device such as a single chip microcomputer.
请参阅图 8, 为本发明提供的排气装置中所釆用的第一种截面调节阀的 剖视图。 该截面调节阀包括阀体 51、 与阀体 51相连通的一个出气端 59、 至 少三个分散设置的进气端 56 ( 56-1、 56-2、 56-3和 56-4 )和设置于截面调节 阀内部的可旋转的阀芯 52; 其中， 出气端 59与一抽气装置相连接， 至少三 个进气端 56分别与各个排气口对应连接； 可旋转的阀芯 52用于使各个进气 端 56的进气速率随时间而进行顺时针或逆时针旋转， 以使与各个进气端 56 对应连接的排气口的排气速率进行顺时针或逆时针旋转， 即， 使与各个进气 端 56对应连接的排气口的排气速率沿顺时针方向逐渐变化，或沿逆时针方向 逐渐变化， 如图 8中标号 54所示。  Referring to Figure 8, there is shown a cross-sectional view of a first type of cross-section regulating valve used in the venting apparatus of the present invention. The section regulating valve includes a valve body 51, an air outlet end 59 in communication with the valve body 51, and at least three discretely disposed intake ends 56 (56-1, 56-2, 56-3, and 56-4) and settings a rotatable spool 52 inside the cross-section regulating valve; wherein, the outlet end 59 is connected to an air suction device, and at least three intake ends 56 are respectively connected to the respective exhaust ports; the rotatable valve core 52 is used for The intake air rate of each of the intake ends 56 is rotated clockwise or counterclockwise with time to rotate the exhaust rate of the exhaust ports correspondingly connected to the respective intake ends 56 clockwise or counterclockwise, that is, The exhaust rate of the exhaust port correspondingly connected to each of the intake ports 56 gradually changes in a clockwise direction, or gradually changes in a counterclockwise direction, as indicated by reference numeral 54 in FIG.
如图所示， 本实施例中， 阀体 51釆用一种圓柱体形的结构， 出气端 59 与圓柱体形阀体 51的一个端面相连通， 多个进气端 56 (本实施例中为 4个， 分别为 56-1、 56-2、 56-3、 56-4 )与圓柱体形的阀体 51侧面相连通。 本实施 例中， 优选地使 4个进气端 56均勾地分布于阀体 51的圓周上， 在实际应用 中， 也可根据需要而增加或减少进气端 56的数量 (最少应保留 2个进气端； 在一些优选的实施例中， 进气端的数量为至少 3个）， 并且使各个进气端 56 以非均匀排布的方式连接在阀体 51的侧面。  As shown in the figure, in the present embodiment, the valve body 51 is of a cylindrical structure, and the air outlet end 59 communicates with one end surface of the cylindrical valve body 51, and a plurality of intake ends 56 (in this embodiment, 4) Each of the 56-1, 56-2, 56-3, 56-4) is in communication with the side of the cylindrical valve body 51. In this embodiment, the four intake ends 56 are preferably distributed on the circumference of the valve body 51. In practical applications, the number of the intake ends 56 may be increased or decreased as needed (minimum of 2) The intake ports; in some preferred embodiments, the number of intake ends is at least three), and the respective intake ends 56 are coupled to the sides of the valve body 51 in a non-uniform arrangement.
阀芯 52为一种空心筒状结构， 其可绕阀体 51的中心轴进行旋转。 在该 筒状结构的阀芯 52的侧面设置有一个通孔 53 , 进气端 56经由该通孔 53与 出气端 59相连通， 并且在阀芯 52与阀体 51之间具有一定的间隙 55。 上述 通孔 53所正对的进气端 56可获得最大的进气速率，从而使得与该进气端 56 相连的排气口获得最大的排气速率， 如图 8中标号 57所示； 随着阀芯 52的 旋转， 各个进气端 56逐个获得最大的进气速率， 相应的， 各个排气口逐个获 得最大的排气速率。 与此同时， 尚未与上述通孔 53正对的进气端 56可经由 上述间隙 55间接地与上述出气端 59相连通，从而获得相对较小的进气速率； 并且，各个进气端 56的流量还会受到其所在位置与当时阀芯 52上的通孔 53 的距离远近的影响。 以图 8中阀芯 52位置为例， 进气端 56-3距离通孔 53最 远， 故其相应的流量 P3最小； 而进气端 56-1此时正对通孔 53 , 故此时该进 气端 56-1的流量值 P1为其最大值， 且大于其他的进气端的流量； 其余的两 个进气端 56-32和 56-4的流量值 P2和 P4则介于上述二者之间。 The spool 52 is a hollow cylindrical structure that is rotatable about the central axis of the valve body 51. In the The side of the tubular structure of the spool 52 is provided with a through hole 53 through which the intake end 56 communicates with the outlet end 59 and a certain gap 55 between the spool 52 and the valve body 51. The intake end 56 directly opposite the through hole 53 can obtain the maximum intake rate, so that the exhaust port connected to the intake end 56 obtains the maximum exhaust rate, as indicated by reference numeral 57 in Fig. 8; With the rotation of the spool 52, each of the intake ports 56 obtains the maximum intake rate one by one, and accordingly, each of the exhaust ports obtains the maximum exhaust rate one by one. At the same time, the intake end 56, which has not been aligned with the above-mentioned through hole 53, can be indirectly communicated with the above-described outlet end 59 via the above-mentioned gap 55, thereby obtaining a relatively small intake rate; and, for each of the intake ends 56 The flow rate is also affected by the distance between its location and the through hole 53 in the spool 52 at that time. Taking the position of the spool 52 in FIG. 8 as an example, the intake end 56-3 is farthest from the through hole 53, so that the corresponding flow rate P3 is the smallest; and the intake end 56-1 is facing the through hole 53 at this time, so this time The flow value P1 of the intake end 56-1 is at its maximum value and larger than the flow rate of the other intake ends; the flow values P2 and P4 of the remaining two intake ends 56-32 and 56-4 are between the above two between.
可以理解的是， 上述阀芯 52上的通孔 53的数量并不限于本实施例中的 一个， 还可根据需要增加通孔 53的数量， 从而使两个或更多的进气端 56的 流量同时获得最大值； 并且， 在阀芯 52上设置多个通孔 53的基础上， 将各 个通孔 53设置为不同的截面大小， 从而通过各个通孔 53的截面大小来控制 各个进气端 56的流量； 此外， 本实施例中所述的通孔 53的形状可以釆用多 种方案， 只要能够满足流体顺利通过的通孔形状就均可以釆用。  It can be understood that the number of the through holes 53 in the above-mentioned spool 52 is not limited to one in the embodiment, and the number of the through holes 53 can be increased as needed, thereby making the two or more intake ends 56 The flow rate simultaneously obtains the maximum value; and, on the basis of the plurality of through holes 53 provided in the spool 52, the respective through holes 53 are set to different cross-sectional sizes, thereby controlling the respective intake ends by the cross-sectional size of each of the through holes 53. In addition, the shape of the through hole 53 described in this embodiment can be variously used as long as it can satisfy the shape of the through hole through which the fluid smoothly passes.
此外， 该截面调节阀还包括阀芯驱动部， 用以驱动阀芯按照预定的旋转 方向和速度进行旋转（图未示）。在实际应用中， 上述旋转驱动部可以釆用多 种装置而实现， 例如釆用电动机、 液压马达等设备均可。 并且可通过预先设 定的计算机程序对上述阀芯驱动部进行控制， 以控制阀芯的旋转方向、 速度 以及控制阀芯的旋转方向和 /或速度的变化频率等参数，从而满足在不同工艺 场合中的使用需要。  Further, the section regulating valve further includes a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed (not shown). In practical applications, the above-described rotary drive unit can be realized by a variety of devices, such as a motor or a hydraulic motor. And the above-mentioned spool driving portion can be controlled by a preset computer program to control parameters such as the rotation direction and speed of the spool and the frequency of change of the rotation direction and/or the speed of the control spool, thereby satisfying different process occasions. Need to use in.
请参阅图 9 , 为本发明提供的截面调节阀第二种具体实施例的结构示意 图。具体地， 图 9 ( A )为本实施例提供的截面调节阀的主视剖视图； 图 9 ( B ) 为本实施例提供的截面调节阀的左视图。如图所示， 阀体 61的形状与上述图 8所示实施例中的阀体 51类似， 出气端 67设置在阀体 61的圓柱形侧面上， 四个进气端 66 ( 66-1、 66-2、 66-3和 66-4 ) 均匀地设置于阀体 61的一个端 面上， 并且， 各个进气端 66与所在端面的圓心之间的距离大致相等。 Please refer to FIG. 9 , which is a schematic structural view of a second embodiment of a cross-section regulating valve provided by the present invention. Specifically, FIG. 9(A) is a front cross-sectional view of the cross-section regulating valve provided in the embodiment; FIG. 9(B) A left side view of the section regulating valve provided for this embodiment. As shown, the shape of the valve body 61 is similar to that of the valve body 51 of the embodiment shown in Fig. 8, and the air outlet end 67 is disposed on the cylindrical side surface of the valve body 61, and four intake ends 66 (66-1, 66-2, 66-3, and 66-4) are uniformly disposed on one end surface of the valve body 61, and the distance between each of the intake ends 66 and the center of the end face is substantially equal.
本实施例中， 阀芯 62釆用一种圓盘状结构， 对应于上述出气端 67及进 气端 66的位置， 在阃芯 62上具有一个用以连通出气端 67和进气端 66的通 孔 63。 该通孔 63至阀芯 62的旋转轴的距离大致等于上述进气端 66与旋转 轴的距离， 从而在阀芯 62旋转时可使该通孔 63逐个与各个进气端 66对正。 当任一个进气端 66在与通孔 63正对时，均可使该进气端 66的流量 p达到最 大值。 因此， 随着阀芯 62的旋转， 能够使各个进气端 66的流量轮流达到最 大值。 本实施例中， 阀芯 62与阀体 61之间同样具有一定的间隙 65 , 以允许 未达到最大流量值的进气端 66以较小的流量与出气端 67相连通。 此外， 本 实施例中釆用电动机作为阀芯驱动部 68, 用以驱动阀芯 62按照预定的旋转 方向和速度进行旋转。 显然， 本实施例中的截面调节阀与上述图 8所示截面 调节阀具有相同或类似的工作原理， 区别仅在于二者的阀芯结构及进气端 66 和出气端 67的位置有所变化， 因而能够产生同样的抽气效果。  In the present embodiment, the spool 62 has a disc-like structure corresponding to the positions of the outlet end 67 and the intake end 66, and has a core 62 for connecting the outlet end 67 and the intake end 66. Through hole 63. The distance from the through hole 63 to the rotating shaft of the spool 62 is substantially equal to the distance between the intake end 66 and the rotating shaft, so that the through hole 63 can be aligned with the respective intake ends 66 one by one when the spool 62 rotates. When either of the intake ports 66 is facing the through hole 63, the flow rate p of the intake port 66 can be maximized. Therefore, as the spool 62 rotates, the flow rates of the respective intake ends 66 can be maximized. In the present embodiment, the spool 62 and the valve body 61 also have a certain gap 65 to allow the intake end 66 that does not reach the maximum flow value to communicate with the outlet end 67 at a small flow rate. Further, in the present embodiment, the electric motor is used as the spool driving portion 68 for driving the spool 62 to rotate in a predetermined rotational direction and speed. Obviously, the section regulating valve in this embodiment has the same or similar working principle as the section regulating valve shown in Fig. 8, except that the spool structure of the two and the positions of the intake end 66 and the outlet end 67 are changed. Therefore, the same pumping effect can be produced.
图 10为本发明提供的排气装置中所釆用的第三种截面调节阀的剖视图。 本实施例中，该截面调节阀的阀体 71上具有四个进气端 76 (即， 76-1、 76-2、 76-3和 76-4 ),并且在每个进气端 76内均设置有可旋转的阀芯 72( 72-1、72-2、 72-3和 72-4 )。 通过控制各个阀芯 72的旋转， 可以对各个进气端 76的进气 速率进行独立调节， 进而对各个排气口的排气速率进行独立调节。 因此， 图 10所示的截面调节阀具有与上述图 6所示实施例相同的排气速率调节方式， 在此不再赘述。  Figure 10 is a cross-sectional view showing a third section regulating valve used in the exhaust apparatus provided by the present invention. In the present embodiment, the valve body 71 of the sectional regulating valve has four intake ends 76 (i.e., 76-1, 76-2, 76-3, and 76-4), and is in each intake end 76. Rotating spools 72 (72-1, 72-2, 72-3, and 72-4) are provided. By controlling the rotation of each of the spools 72, the intake rates of the respective intake ports 76 can be independently adjusted, and the exhaust rates of the respective exhaust ports can be independently adjusted. Therefore, the section regulating valve shown in Fig. 10 has the same exhaust rate adjusting mode as the embodiment shown in Fig. 6, and will not be described again.
需要指出的是， 本发明所提供的截面调节阀的实施方案并不仅限于上述 实施例， 而只要^^于本发明的原理和实质所演化出的适当结构的阀体和阀 芯结构， 并且该阀体及阀芯能够实现与上述各实施例相同及类似功能的技术 方案均应视为本发明的保护范围。 It should be noted that the embodiment of the cross-section regulating valve provided by the present invention is not limited to the above embodiment, but a proper structure of the valve body and the valve core structure which are evolved by the principle and essence of the present invention, and The valve body and the valve core can realize the same and similar functions as the above embodiments. The scheme should be considered as the scope of protection of the present invention.
综上所述， 利用本发明提供的排气装置能够在基片处理腔室中形成动态 的气流分布， 从而有利于获得均匀的基片处理结果。 因此， 在利用本发明提 供的排气装置对基片处理腔室进行排气操作时， 能够使工艺气体更加均匀地 分布于基片上方的区域， 从而有利于获得更加均匀的基片处理结果； 而且， 由于上述排气装置结构简单，不需要在基片处理腔室内设置复杂的隔板机构， 从而可有效避免因隔板机构所带来的颗粒污染等的问题； 并且， 本发明提供 的排气装置在用于不同容积的基片处理设备时均能适用并具有同样的排气效 果。  In summary, the venting apparatus provided by the present invention is capable of forming a dynamic airflow distribution in the substrate processing chamber, thereby facilitating uniform substrate processing results. Therefore, when the substrate processing chamber is subjected to the exhaust operation by the exhaust device provided by the present invention, the process gas can be more uniformly distributed over the region above the substrate, thereby facilitating more uniform substrate processing results; Moreover, since the exhaust device has a simple structure, it is not necessary to provide a complicated diaphragm mechanism in the substrate processing chamber, so that problems such as particle contamination caused by the spacer mechanism can be effectively avoided; and the row provided by the present invention The gas device is applicable and has the same exhaust effect when used in substrate processing equipment of different volumes.
作为另一种技术方案， 本发明还提供一种基片处理设备。 请参阅图 11 , 为本发明提供的基片处理设备的***原理图。 如图所示， 该基片处理设备包 括基片处理腔室 13和设置于基片处理腔室 13内的基片保持部 22,在基片处 理腔室 13上还设置有本发明提供的上述排气装置，用以在基片上方形成均匀 分布的气流。本实施例中，排气装置包括与基片处理腔室 13相连接的排气口 36 (即， 36-1、 36-2、 36-3和 36-4 )、 抽气装置（图未示）以及设置在排气口 36与抽气装置之间的截面调节阀。 其中， 截面调节阀的各个进气端 56 (即， 56-1、 56-2、 56-3和 56-4 )与各个排气口 36对应连接。 在工艺过程中， 随着 阀芯 52的旋转在基片处理腔室 13内形成旋转的气流， 进而获得均勾的基片 处理结果。  As another technical solution, the present invention also provides a substrate processing apparatus. Please refer to FIG. 11 , which is a system schematic diagram of a substrate processing apparatus provided by the present invention. As shown, the substrate processing apparatus includes a substrate processing chamber 13 and a substrate holding portion 22 disposed in the substrate processing chamber 13, and the above-described substrate provided in the present invention is further provided on the substrate processing chamber 13. An exhaust device for forming a uniformly distributed airflow over the substrate. In this embodiment, the exhaust device includes exhaust ports 36 (ie, 36-1, 36-2, 36-3, and 36-4) connected to the substrate processing chamber 13, and an air extracting device (not shown). And a section regulating valve disposed between the exhaust port 36 and the air extracting device. Among them, the respective intake ends 56 of the sectional regulating valves (i.e., 56-1, 56-2, 56-3, and 56-4) are correspondingly connected to the respective exhaust ports 36. During the process, a rotating air flow is formed in the substrate processing chamber 13 as the spool 52 rotates, thereby obtaining a uniform substrate processing result.
请参阅图 12,为本发明提供的基片处理设备的一个具体实施例的***结 构示意图。如图所示， 本实施例中， 釆用一种具有单层托盘 22的基片处理腔 室 100。该基片处理腔室 100具有一个进气口 80和均勾设置在基片处理腔室 100的四周的四个排气口 36 (分别为 36-1,36-2,36-3,36-4, 图 12所示的剖面 中仅 36-1和 36-3可见）， 其中， 进气口 80对应于托盘 22上方的大致中心位 置， 四个排气口 36则均勾分布于托盘 22的圓周范围。 上述四个排气口 36 即为本发明所提供的上述排气装置的排气口 36, 本实施例中， 将各个排气口 36对应地连接至作为截面调节阀的旋转阀 200的各个进气端 66上（分别为 66-1,66-2,66-3,66-4, 图 12所示的剖面中仅 66-1和 66-3可见）, 旋转阀 200 的出气端连接至一个抽气装置 （本实施例中， 该抽气装置釆用一种抽气泵）， 这样即形成一个完整的气路。 Please refer to FIG. 12 , which is a schematic structural diagram of a system of a specific embodiment of a substrate processing apparatus provided by the present invention. As shown, in this embodiment, a substrate processing chamber 100 having a single layer tray 22 is used. The substrate processing chamber 100 has an air inlet 80 and four exhaust ports 36 that are uniformly disposed around the substrate processing chamber 100 (36-1, 36-2, 36-3, 36- respectively). 4, only 36-1 and 36-3 are visible in the section shown in FIG. 12, wherein the air inlet 80 corresponds to a substantially central position above the tray 22, and the four exhaust ports 36 are both hooked on the tray 22. Circumference range. The above four exhaust ports 36 are the exhaust ports 36 of the above-mentioned exhaust device provided by the present invention. In this embodiment, each exhaust port is provided. 36 is correspondingly connected to each of the intake ends 66 of the rotary valve 200 as a sectional regulating valve (66-1, 66-2, 66-3, 66-4, respectively, only 66-1 in the section shown in Fig. 12). And 66-3, the outlet end of the rotary valve 200 is connected to an air suction device (in the present embodiment, the air suction device uses an air pump), so that a complete air path is formed.
下面对本发明提供的上述基片处理设备的工作过程进行详细说明。 首先 将待加工基片置于托盘 22上的相应装片位置，然后由基片处理腔室 100的供 气口 80向腔室内通入工艺气体，与此同时使抽气泵和旋转阀 200同时工作以 将腔室内的反应后的气体及时排出。 具体为， 抽气泵为旋转阀 200的出气端 持续地提供一定的抽气速率， 阀芯驱动部 68驱动阀芯 62按照一定的旋转方 向和旋转速度进行旋转。 当阀芯 62上的通孔 63对正某一个进气端 66 (例如 图中所示的进气端 66-1 ) 时， 该进气端 66即可形成较大的进气速率， 相应 地， 该进气端 66所对应的排气口 36-1即可产生一个相对其他排气口 （36-2, 36-3 , 36-4 ) 而言较大的排气速率， 从而使基片处理腔室 100 中朝向该排气 口 36-1的气体流量大于其他方向的气体流量； 并且随着阀芯 62的旋转， 腔 室内对应于各个排气口 36的气流将依次形成最大的气体流量，从而在腔室内 形成一种类似于旋转的动态气流。 由于该旋转气流的作用，使托盘 22上的各 个基片的各个区域均能够获得足够的气体供应， 从而为提高基片处理质量提 供有力保障。 在上述过程中， 抽气泵的抽气速率和旋转阀 200的旋转方向及 速率均可通过排气速率控制模块进行实时控制， 具体的控制参数可以根据工 艺过程中实际需要而定， 也可根据事先的实验数据进行确定。  The working process of the above substrate processing apparatus provided by the present invention will be described in detail below. First, the substrate to be processed is placed at a corresponding loading position on the tray 22, and then the process gas is introduced into the chamber from the air supply port 80 of the substrate processing chamber 100, and at the same time, the air pump and the rotary valve 200 are simultaneously operated. The gas after the reaction in the chamber is discharged in time. Specifically, the air pump continuously supplies a certain pumping rate to the air outlet end of the rotary valve 200, and the spool driving portion 68 drives the spool 62 to rotate in a certain rotation direction and rotation speed. When the through hole 63 in the spool 62 is aligned with a certain intake end 66 (for example, the intake end 66-1 shown in the drawing), the intake end 66 can form a larger intake rate, correspondingly The exhaust port 36-1 corresponding to the intake end 66 can generate a larger exhaust rate relative to the other exhaust ports (36-2, 36-3, 36-4), thereby making the substrate The gas flow rate in the processing chamber 100 toward the exhaust port 36-1 is greater than the gas flow in other directions; and as the spool 62 rotates, the airflow corresponding to each of the exhaust ports 36 in the chamber will sequentially form a maximum gas flow rate. Thus, a dynamic airflow similar to rotation is formed within the chamber. Due to the action of the swirling airflow, sufficient gas supply can be obtained in each region of each of the substrates on the tray 22, thereby providing a strong guarantee for improving the processing quality of the substrate. In the above process, the pumping rate of the air pump and the direction and speed of rotation of the rotary valve 200 can be controlled in real time by the exhaust rate control module. The specific control parameters can be determined according to actual needs in the process, or The experimental data was determined.
需要说明的是，上述图 12所示实施例中的排气装置并不局限于此，其可 以是上述本发明提供的排气装置的各个实施例中的任意一种。  It should be noted that the exhausting device in the above-described embodiment shown in Fig. 12 is not limited thereto, and may be any one of the respective embodiments of the exhausting device provided by the above-described present invention.
请参阅图 13 ,为本发明提供的基片处理设备中所釆用的一种具有多层托 盘的基片处理腔室的剖视图。如图所示，本实施例中釆用一种多层托盘 22(图 中为 4层， 在实际应用中并不受此数量限制）用于承载基片， 以提高生产效 率。在基片处理腔室 13内，对应于各个托盘的位置可以设置供气通道和排气 通道，具体如下。上述多层托盘 22彼此平行且在腔室中心轴方向上间隔一定 距离地串接在支撑装置 93的外侧， 该支撑装置 93沿腔室中心轴方向设置， 其内部为空心结构， 在支撑装置 93的底部设置供气口 80, 同时在支撑装置 93上且沿其长度方向对应于各个托盘 22所在位置设置多个供气孔 94, 该支 撑装置 93的内部及各个供气孔 94构成该基片处理设备的供气通道。相应的， 在基片处理腔室 100内设置一个圓筒状内壁 90, 并使内壁 90与腔室外壁之 间保持一定间隙 91 ,同时在该内壁 90上设置多个通孔 92,这样上述通孔 92、 间隙 91共同构成上述基片处理设备的排气通道。将本发明提供的上述排气装 置通过设置在腔室外壁上的排气口 36 (即， 36-1、 36-2、 36-3和 36-4; 图 13 所示的剖视图中仅示出 36-1和 36-3 )与上述排气通道相连接，从而在多层托 盘 22表面产生动态的气流， 并进而获得均匀的工艺结果。 Please refer to FIG. 13, which is a cross-sectional view of a substrate processing chamber having a multi-layer tray used in the substrate processing apparatus provided by the present invention. As shown in the figure, in the present embodiment, a multi-layer tray 22 (four layers in the drawing, which is not limited by this number in practical use) is used for carrying the substrate to improve production efficiency. In the substrate processing chamber 13, an air supply passage and an exhaust gas may be provided corresponding to the positions of the respective trays. The channel is as follows. The multi-layer trays 22 are parallel to each other and are connected in series to the outside of the support device 93 at a distance from the central axis of the chamber. The support device 93 is disposed along the central axis of the chamber, and the interior thereof is a hollow structure. The air supply port 80 is disposed at the bottom, and a plurality of air supply holes 94 are disposed on the support device 93 and along the longitudinal direction thereof corresponding to the positions of the respective trays 22. The inner portion of the support device 93 and the respective air supply holes 94 constitute the substrate processing device. The gas supply channel. Correspondingly, a cylindrical inner wall 90 is disposed in the substrate processing chamber 100, and a certain gap 91 is maintained between the inner wall 90 and the outer wall of the chamber, and a plurality of through holes 92 are disposed in the inner wall 90. The holes 92 and the gaps 91 collectively constitute an exhaust passage of the above substrate processing apparatus. The above-described exhaust device provided by the present invention is shown by the exhaust port 36 (i.e., 36-1, 36-2, 36-3, and 36-4) disposed on the outer wall of the chamber; only the cross-sectional view shown in Fig. 13 is shown. 36-1 and 36-3) are connected to the above-described exhaust passage to generate a dynamic air flow on the surface of the multilayer pallet 22, and thereby obtain a uniform process result.
还需要指出的是， 虽然上述实施例中均釆用将供气通道和供气口设置于 基片处理腔室的四周的方式， 但本发明并不局限于此， 例如还可以将供气通 道设置于基片处理腔室的四周， 相应的， 将排气通道沿基片处理腔室的中心 轴而设置。这种方案实际上是将上述实施例中的排气通道作为进气通道使用， 并将进气通道作为排气通道使用。  It should be noted that although the above embodiments use the manner in which the air supply passage and the air supply port are disposed around the substrate processing chamber, the present invention is not limited thereto, and for example, the air supply passage may be further provided. It is disposed around the substrate processing chamber, and correspondingly, the exhaust passage is disposed along the central axis of the substrate processing chamber. Such a scheme actually uses the exhaust passage in the above embodiment as an intake passage, and uses the intake passage as an exhaust passage.
综上所述， 由于本发明提供的基片处理设备中釆用本发明提供的上述排 气装置进行排气操作 ,因而能够在基片处理腔室内获得均匀的工艺气体分布 , 并使腔室内各个区域均可获得充足的气体供应， 从而有利于获得均匀的基片 处理结果； 并且， 由于本发明提供的上述排气装置不受腔室容积的限制， 因 此本发明提供的基片处理设备可以被设计为多种容量规格的大型设备。  In summary, since the above-mentioned exhaust device provided by the present invention performs the exhaust operation in the substrate processing apparatus provided by the present invention, a uniform process gas distribution can be obtained in the substrate processing chamber, and each chamber is provided. A sufficient gas supply can be obtained in the region, thereby facilitating uniform substrate processing results; and, since the above-described exhaust device provided by the present invention is not limited by the chamber volume, the substrate processing apparatus provided by the present invention can be Designed for large equipment in a variety of capacity specifications.
需要说明的是， 上述各实施例中所涉及的托盘均可由圓形石墨主体和附 着于石墨主体表面的碳化硅构成。 在实际应用中， 上述基片处理设备例如可 以是金属有机化合物化学气相淀积设备等。  It should be noted that the trays involved in the above embodiments may be composed of a circular graphite body and silicon carbide attached to the surface of the graphite body. In practical applications, the above substrate processing apparatus may be, for example, a metal organic compound chemical vapor deposition apparatus or the like.
可以理解的是， 以上实施方式仅仅是为了说明本发明的原理而釆用的示 例性实施方式， 然而本发明并不局限于此。 对于本领域内的普通技术人员而 言， 在不脱离本发明的精神和实质的情况下， 可以做出各种变形和改进， 这 些变形和改进也视为本发明的保护范围。 It is to be understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the invention, but the invention is not limited thereto. For those of ordinary skill in the art Various changes and modifications can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be the scope of the invention.

Claims

UP-112308-00 利 要 求 书 UP-112308-00 request
1. 一种排气方法， 用于配合基片处理腔室进行排气操作， 其特征在于， 包括下述步骤： An exhaust method for venting a substrate processing chamber, the method comprising the steps of:
10 )为所述基片处理腔室设置至少两个排气口， 并使各个排气口的排气 速率可被单独控制；  10) providing at least two exhaust ports for the substrate processing chamber, and allowing the exhaust rates of the respective exhaust ports to be individually controlled;
20 )使所述至少两个排气口以不同的排气速率向外排气。  20) venting the at least two exhaust ports outward at different exhaust rates.
2. 根据权利要求 1所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 使各个所述排气口的排气速率随时间变化。 2. The exhausting method according to claim 1, wherein in the step (20), an exhaust rate of each of the exhaust ports is varied with time.
3. 根据权利要求 2所述的排气方法， 其特征在于， 在所述步骤 10 ) 中， 所述排气口的数量至少为三个。 3. The exhausting method according to claim 2, wherein in the step 10), the number of the exhaust ports is at least three.
4. 根据权利要求 3所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 使所述至少三个排气口中的至少一个排气口的排气速率大于其它排气口的排 气速率。 The exhaust method according to claim 3, wherein in the step 20), the exhaust rate of at least one of the at least three exhaust ports is greater than that of the other exhaust ports Exhaust rate.
5. 根据权利要求 4所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 使其中一个排气口的排气速率大于其它排气口的排气速率， 并且使其它排气 口的排气速率相等。 5. The exhausting method according to claim 4, wherein in the step 20), an exhaust rate of one of the exhaust ports is made larger than an exhaust rate of the other exhaust ports, and the other exhaust is made The discharge rate of the mouth is equal.
6. 根据权利要求 4所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 使其中一个排气口的排气速率大于其它排气口； 并且 The exhaust method according to claim 4, wherein in the step 20), the exhaust rate of one of the exhaust ports is made larger than the other exhaust ports;
其它排气口的排气速率的设置规则为： 距离所述排气速率最大的那个排 气口越远的排气口的排气速率越小。 The exhaust gas velocity of the other exhaust ports is set such that the exhaust gas velocity of the exhaust port farther from the exhaust gas having the largest exhaust gas velocity is smaller.
7. 根据权利要求 4所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 按照各个排气口沿顺时针或逆时针方向的排列顺序而使各个排气口依次获得 最大的排气速率。 7. The exhausting method according to claim 4, wherein in the step 20), each of the exhaust ports is sequentially maximized according to an arrangement order of the respective exhaust ports in a clockwise or counterclockwise direction. Exhaust rate.
8. 根据权利要求 7所述的排气方法， 其特征在于， 在所述步骤 20 ) 中， 使各个所述排气口的排气速率连续变化； 或者， 使各个所述排气口的排气速 率每隔预定时长变化一次。 The exhausting method according to claim 7, wherein in the step 20), the exhaust rate of each of the exhaust ports is continuously changed; or, the row of each of the exhaust ports is made The gas rate changes every predetermined time period.
9. 根据权利要求 8所述的排气方法， 其特征在于， 所述预定时长为定值 或变量。 9. The exhaust method according to claim 8, wherein the predetermined duration is a constant value or a variable.
10. 一种排气装置， 用于配合基片处理腔室进行排气操作， 其特征在于， 所述排气装置包括连接至所述基片处理腔室的至少两个排气口， 其中， 各个 排气口的排气速率可被单独控制。 An exhaust device for venting a substrate processing chamber, wherein the exhaust device includes at least two exhaust ports connected to the substrate processing chamber, wherein The exhaust rate of each exhaust port can be individually controlled.
11. 根据权利要求 10所述的排气装置， 其特征在于， 所述排气口的数量 至少为三个。 The exhaust device according to claim 10, wherein the number of the exhaust ports is at least three.
12. 根据权利要求 10所述的排气装置， 其特征在于， 各个所述排气口的 单位面积的气体流速和 /或排气截面积可被调节，通过分别调节各个所述排气 口的单位面积的气体流速和 /或排气截面积而对排气口的排气速率进行调节。 12. The exhaust device according to claim 10, wherein a gas flow rate and/or an exhaust cross-sectional area per unit area of each of the exhaust ports is adjustable by separately adjusting each of the exhaust ports The gas flow rate per unit area and/or the exhaust cross-sectional area adjusts the exhaust rate of the exhaust port.
13. 根据权利要求 12所述的排气装置， 其特征在于， 各个所述排气口分 别连接至各自专用的抽气装置， 通过调节各个抽气装置的抽气速率而对各个 排气口的排气速率进行调节。 13. The exhaust apparatus according to claim 12, wherein each of the exhaust ports is connected to a respective dedicated air suction device, and each air exhaust port is adjusted by adjusting a pumping rate of each air pumping device. The exhaust rate is adjusted.
14. 根据权利要求 12所述的排气装置， 其特征在于， 各个所述排气口分 别通过独立的排气管路而连接至同一个抽气装置上， 并且各个所述排气管路 中均设置有截面调节阀， 通过调节各个排气管路中的截面调节阀而对各个排 气口的排气截面积进行调节， 以对各个排气口的排气速率进行调节。 14. The exhaust device according to claim 12, wherein each of the exhaust ports is connected to the same air suction device through separate exhaust lines, and each of the exhaust lines A cross-section regulating valve is provided, and the exhaust cross-sectional area of each exhaust port is adjusted by adjusting the sectional regulating valve in each exhaust line to adjust the exhaust rate of each exhaust port.
15. 根据权利要求 12所述的排气装置， 其特征在于， 各个所述排气口分 别通过独立的排气管路而连接至各自专用的抽气装置， 并且在各个排气管路 中均设置有截面调节阀；通过控制各个抽气装置的抽气速率和 /或调节截面调 节阀而对各个排气口的单位面积的气体流速和 /或排气截面积进行调节，以对 各个排气口的排气速率进行调节。 15. The exhaust apparatus according to claim 12, wherein each of the exhaust ports is connected to a dedicated exhaust device through a separate exhaust line, and is in each exhaust line A cross-section regulating valve is provided; the gas flow rate and/or the exhaust cross-sectional area per unit area of each exhaust port are adjusted by controlling the pumping rate of each air extracting device and/or adjusting the sectional regulating valve to each exhaust gas The discharge rate of the port is adjusted.
16. 根据权利要求 10-15 中任意一项所述的排气装置， 其特征在于， 还 包括排气速率控制模块， 用于控制各个排气口以不同的排气速率向外排气， 并且使各个排气口的排气速率随时间变化。 16. The exhaust apparatus according to any one of claims 10-15, further comprising an exhaust rate control module for controlling each exhaust port to exhaust outward at a different exhaust rate, and The exhaust rate of each exhaust port is varied over time.
17. 根据权利要求 16所述的排气装置， 其特征在于， 所述排气速率控制 模块按照顺时针或逆时针方向依次将所述排气口的排气速率控制为最大值。 17. The exhaust apparatus according to claim 16, wherein the exhaust rate control module sequentially controls the exhaust rate of the exhaust port to a maximum value in a clockwise or counterclockwise direction.
18. 根据权利要求 17所述的排气装置， 其特征在于， 所述截面调节阀包 括一个出气端、 至少三个分散设置的进气端和设置于所述截面调节阀内部的 可旋转的阀芯； 其中， 18. The venting apparatus according to claim 17, wherein the section regulating valve includes an outlet end, at least three dispersed intake ends, and a rotatable valve disposed inside the section regulating valve Core; among them,
所述出气端与一抽气装置相连接， 所述至少三个进气端分别与各个所述 排气口对应连接；  The air outlet end is connected to an air exhausting device, and the at least three air inlet ends are respectively connected to each of the air exhaust ports;
所述可旋转的阀芯用于使所述至少三个进气端的进气速率随时间而进 行顺时针或逆时针旋转， 以使与各个进气端对应连接的所述排气口的排气速 率产生相应变化。 The rotatable spool is configured to rotate the intake rate of the at least three intake ends clockwise or counterclockwise with time to exhaust the exhaust ports correspondingly connected to the respective intake ends The rate changes accordingly.
19. 根据权利要求 18所述的排气装置，其特征在于，还包括阀芯驱动部, 用以驱动所述阀芯按照预定的旋转方向和速度进行旋转。 19. The venting apparatus according to claim 18, further comprising a spool driving portion for driving the spool to rotate in a predetermined rotational direction and speed.
20. 一种基片处理设备， 包括基片处理腔室和设置于所述基片处理腔室 内的基片保持部， 其特征在于， 还包括权利要求 10-19中任意一项所述的排 气装置， 用以在基片上方形成均匀分布的气流。 20. A substrate processing apparatus comprising a substrate processing chamber and a substrate holding portion disposed in the substrate processing chamber, further comprising the row of any one of claims 10-19 A gas device for forming a uniformly distributed gas flow over the substrate.
21. 根据权利要求 20所述的基片处理设备， 其特征在于， 所述基片保持 部包括至少两层沿基片处理腔室高度方向排列的托盘结构； 在所述基片处理 腔室内， 对应于各个所述托盘的位置而设置有供气通道和排气通道， 所述排 气装置与所述排气通道相连接。 The substrate processing apparatus according to claim 20, wherein the substrate holding portion includes at least two layers of tray structures arranged in a height direction of the substrate processing chamber; in the substrate processing chamber, An air supply passage and an exhaust passage are provided corresponding to positions of the respective trays, and the exhaust device is connected to the exhaust passage.
22. 根据权利要求 21所述的基片处理设备， 其特征在于， 所述供气通道 沿所述基片处理腔室的中心轴而设置， 相应的， 所述排气通道设置于所述基 片处理腔室的四周。 The substrate processing apparatus according to claim 21, wherein the air supply passage is disposed along a central axis of the substrate processing chamber, and correspondingly, the exhaust passage is disposed at the base The sheet is processed around the chamber.
23. 根据权利要求 21所述的基片处理设备， 其特征在于， 所述供气通道 设置于所述基片处理腔室的四周， 相应的， 所述排气通道沿所述基片处理腔 室的中心轴而设置。 The substrate processing apparatus according to claim 21, wherein the air supply passage is disposed around the substrate processing chamber, and correspondingly, the exhaust passage is along the substrate processing chamber Set in the center axis of the room.
24. 根据权利要求 20-23中任意一项所述的基片处理设备， 其特征在于, 所述基片处理设备为金属有机化合物化学气相淀积设备。 The substrate processing apparatus according to any one of claims 20 to 23, wherein the substrate processing apparatus is a metal organic compound chemical vapor deposition apparatus.
PCT/CN2012/071266 2011-06-13 2012-02-17 Exhausting method, exhausting apparatus and substrate processing device WO2012171354A1 (en)

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