WO2012169826A3 - Electricity generating device using a nanowire - Google Patents

Electricity generating device using a nanowire Download PDF

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Publication number
WO2012169826A3
WO2012169826A3 PCT/KR2012/004539 KR2012004539W WO2012169826A3 WO 2012169826 A3 WO2012169826 A3 WO 2012169826A3 KR 2012004539 W KR2012004539 W KR 2012004539W WO 2012169826 A3 WO2012169826 A3 WO 2012169826A3
Authority
WO
WIPO (PCT)
Prior art keywords
nanowire
light
receiving unit
generating device
electricity generating
Prior art date
Application number
PCT/KR2012/004539
Other languages
French (fr)
Korean (ko)
Other versions
WO2012169826A2 (en
Inventor
전희창
조학동
강태원
Original Assignee
동국대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동국대학교 산학협력단 filed Critical 동국대학교 산학협력단
Publication of WO2012169826A2 publication Critical patent/WO2012169826A2/en
Publication of WO2012169826A3 publication Critical patent/WO2012169826A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03044—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds comprising a nitride compounds, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • H02S10/10—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power including a supplementary source of electric power, e.g. hybrid diesel-PV energy systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Abstract

The present invention relates to an electricity generating device using a nanowire, wherein the device comprises a nanowire constituting an N-type semiconductor and a light-receiving unit constituted from a P-type semiconductor, and wherein the nanowire is constituted from a substance having a piezoelectric effect whereby mechanical energy is converted into electrical energy, and the nanowire is connected to the light-receiving unit in such a way that pressure applied to the light-receiving unit is relayed to the nanowire, while a PN junction is formed when the light-receiving unit and the nanowire are connected. Once the nanowire and the light-receiving unit have been connected and a PN junction has been formed, solar energy can be absorbed so as to generate a current and, at the same time, vibrations or pressure transmitted to the light-receiving unit can be transmitted to the nanowire having the piezoelectric effect so as to generate a current.
PCT/KR2012/004539 2011-06-10 2012-06-08 Electricity generating device using a nanowire WO2012169826A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110056420A KR101221501B1 (en) 2011-06-10 2011-06-10 Apparatus of generating electricity by using nano-wires
KR10-2011-0056420 2011-06-10

Publications (2)

Publication Number Publication Date
WO2012169826A2 WO2012169826A2 (en) 2012-12-13
WO2012169826A3 true WO2012169826A3 (en) 2013-03-07

Family

ID=47296620

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004539 WO2012169826A2 (en) 2011-06-10 2012-06-08 Electricity generating device using a nanowire

Country Status (2)

Country Link
KR (1) KR101221501B1 (en)
WO (1) WO2012169826A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101459625B1 (en) * 2013-06-19 2014-11-07 충북대학교 산학협력단 Electric power generator by using aluminum foil and piezo-electric materials
WO2015004231A1 (en) * 2013-07-10 2015-01-15 Universitat Autonoma De Barcelona Electrode for a nanogenerator with a piezoelectric material made of nanowires
CN105591166B (en) * 2014-10-24 2017-10-31 华中科技大学 A kind of TRT and its manufacture method based on carbon material
CN106328802B (en) * 2016-09-27 2019-02-12 电子科技大学 A kind of piezoelectricity bipolar junction transistor
CN110690312A (en) * 2019-10-31 2020-01-14 华南理工大学 Flexible ultraviolet detector and method obtained by nondestructive transfer process of GaN nanorod array grown on graphene substrate
CN111029337B (en) * 2019-11-18 2021-12-21 浙江大学 Multi-energy collection system based on semiconductor heterogeneous integration

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100062729A (en) * 2008-12-02 2010-06-10 삼성전자주식회사 Apparatus for storing energy and method for manufacturing the same
KR20100073972A (en) * 2008-12-22 2010-07-01 삼성전자주식회사 Apparatus for generating electrical energy and method for manufacturing the same
KR20110021637A (en) * 2009-08-25 2011-03-04 삼성전자주식회사 Apparatus for generating electrical energy and method for manufacturing the same
KR20110040254A (en) * 2009-10-13 2011-04-20 삼성전자주식회사 Apparatus for generating electrical energy

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100062729A (en) * 2008-12-02 2010-06-10 삼성전자주식회사 Apparatus for storing energy and method for manufacturing the same
KR20100073972A (en) * 2008-12-22 2010-07-01 삼성전자주식회사 Apparatus for generating electrical energy and method for manufacturing the same
KR20110021637A (en) * 2009-08-25 2011-03-04 삼성전자주식회사 Apparatus for generating electrical energy and method for manufacturing the same
KR20110040254A (en) * 2009-10-13 2011-04-20 삼성전자주식회사 Apparatus for generating electrical energy

Also Published As

Publication number Publication date
KR101221501B1 (en) 2013-01-15
WO2012169826A2 (en) 2012-12-13
KR20120137097A (en) 2012-12-20

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