WO2012165861A3 - Substrate processing system and substrate processing method using the same - Google Patents

Substrate processing system and substrate processing method using the same Download PDF

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Publication number
WO2012165861A3
WO2012165861A3 PCT/KR2012/004268 KR2012004268W WO2012165861A3 WO 2012165861 A3 WO2012165861 A3 WO 2012165861A3 KR 2012004268 W KR2012004268 W KR 2012004268W WO 2012165861 A3 WO2012165861 A3 WO 2012165861A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
substrate processing
processing system
same
processing method
Prior art date
Application number
PCT/KR2012/004268
Other languages
French (fr)
Other versions
WO2012165861A2 (en
Inventor
Jin-Ok Jung
Sang-Sun Lee
Jung-Min Han
Original Assignee
Tes Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tes Co., Ltd filed Critical Tes Co., Ltd
Publication of WO2012165861A2 publication Critical patent/WO2012165861A2/en
Publication of WO2012165861A3 publication Critical patent/WO2012165861A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Provided are a substrate processing system with an improved structure which can prevent a damage from occurring in a lower layer and efficiently remove both etching byproducts and fumes, and a substrate processing method using the same. The substrate processing system includes a wet cleaning module configured to supply a cleaning solutionto a substrate to clean a surface of the substrate and dry the cleaned substrate, and a dry cleaning module configured to spray a cleaning gas containing HF gas to the substrate to etch a silicon oxide layer formed on the substrate.
PCT/KR2012/004268 2011-05-31 2012-05-30 Substrate processing system and substrate processing method using the same WO2012165861A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110051974A KR101290527B1 (en) 2011-05-31 2011-05-31 Substrate processing system and substrate processing method using the same
KR10-2011-0051974 2011-05-31

Publications (2)

Publication Number Publication Date
WO2012165861A2 WO2012165861A2 (en) 2012-12-06
WO2012165861A3 true WO2012165861A3 (en) 2013-04-04

Family

ID=47260077

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004268 WO2012165861A2 (en) 2011-05-31 2012-05-30 Substrate processing system and substrate processing method using the same

Country Status (3)

Country Link
KR (1) KR101290527B1 (en)
TW (2) TWI538035B (en)
WO (1) WO2012165861A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101463961B1 (en) * 2013-02-15 2014-11-26 최대규 Plasma process system
KR101612416B1 (en) * 2014-04-22 2016-04-15 피에스케이 주식회사 Apparatus and method for treating a substrate
KR101718519B1 (en) * 2014-07-24 2017-03-22 최도현 Single platform work piece processing apparatus for dry and wet processing
KR101612516B1 (en) * 2014-07-24 2016-04-29 최도현 Single platform work piece processing apparatus for dry and wet processing
KR101718518B1 (en) * 2014-07-24 2017-03-22 최도현 Single platform work piece processing apparatus for dry and wet processing
KR101678367B1 (en) * 2014-12-19 2016-11-22 주식회사 테스 Substrate processing system
KR102129773B1 (en) * 2016-04-07 2020-07-03 최도현 Single platform work piece processing apparatus for dry and wet processing
EP3701561A4 (en) 2017-10-23 2021-07-21 Lam Research AG Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures
WO2020072278A1 (en) 2018-10-03 2020-04-09 Lam Research Ag Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) * 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
JPH0590239A (en) * 1991-09-30 1993-04-09 Fujitsu Ltd Cleaning method and cleaning device
KR19980073956A (en) * 1997-03-20 1998-11-05 윤종용 In-situ cleaning device for semiconductor device and cleaning method of semiconductor device using same
JP3035450B2 (en) * 1994-07-19 2000-04-24 大日本スクリーン製造株式会社 Substrate cleaning method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
JP5016351B2 (en) * 2007-03-29 2012-09-05 東京エレクトロン株式会社 Substrate processing system and substrate cleaning apparatus
JP5058085B2 (en) * 2008-07-02 2012-10-24 東京エレクトロン株式会社 Substrate cleaning device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3953265A (en) * 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
JPH0590239A (en) * 1991-09-30 1993-04-09 Fujitsu Ltd Cleaning method and cleaning device
JP3035450B2 (en) * 1994-07-19 2000-04-24 大日本スクリーン製造株式会社 Substrate cleaning method
KR19980073956A (en) * 1997-03-20 1998-11-05 윤종용 In-situ cleaning device for semiconductor device and cleaning method of semiconductor device using same

Also Published As

Publication number Publication date
KR20120133341A (en) 2012-12-10
TWI503877B (en) 2015-10-11
KR101290527B1 (en) 2013-07-30
WO2012165861A2 (en) 2012-12-06
TW201248705A (en) 2012-12-01
TWI538035B (en) 2016-06-11
TW201523714A (en) 2015-06-16

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