WO2012165861A3 - Substrate processing system and substrate processing method using the same - Google Patents
Substrate processing system and substrate processing method using the same Download PDFInfo
- Publication number
- WO2012165861A3 WO2012165861A3 PCT/KR2012/004268 KR2012004268W WO2012165861A3 WO 2012165861 A3 WO2012165861 A3 WO 2012165861A3 KR 2012004268 W KR2012004268 W KR 2012004268W WO 2012165861 A3 WO2012165861 A3 WO 2012165861A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- substrate processing
- processing system
- same
- processing method
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 10
- 238000003672 processing method Methods 0.000 title abstract 2
- 238000004140 cleaning Methods 0.000 abstract 3
- 239000007789 gas Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000006227 byproduct Substances 0.000 abstract 1
- 238000005108 dry cleaning Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000003517 fume Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Provided are a substrate processing system with an improved structure which can prevent a damage from occurring in a lower layer and efficiently remove both etching byproducts and fumes, and a substrate processing method using the same. The substrate processing system includes a wet cleaning module configured to supply a cleaning solutionto a substrate to clean a surface of the substrate and dry the cleaned substrate, and a dry cleaning module configured to spray a cleaning gas containing HF gas to the substrate to etch a silicon oxide layer formed on the substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110051974A KR101290527B1 (en) | 2011-05-31 | 2011-05-31 | Substrate processing system and substrate processing method using the same |
KR10-2011-0051974 | 2011-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012165861A2 WO2012165861A2 (en) | 2012-12-06 |
WO2012165861A3 true WO2012165861A3 (en) | 2013-04-04 |
Family
ID=47260077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2012/004268 WO2012165861A2 (en) | 2011-05-31 | 2012-05-30 | Substrate processing system and substrate processing method using the same |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101290527B1 (en) |
TW (2) | TWI538035B (en) |
WO (1) | WO2012165861A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101463961B1 (en) * | 2013-02-15 | 2014-11-26 | 최대규 | Plasma process system |
KR101612416B1 (en) * | 2014-04-22 | 2016-04-15 | 피에스케이 주식회사 | Apparatus and method for treating a substrate |
KR101718519B1 (en) * | 2014-07-24 | 2017-03-22 | 최도현 | Single platform work piece processing apparatus for dry and wet processing |
KR101612516B1 (en) * | 2014-07-24 | 2016-04-29 | 최도현 | Single platform work piece processing apparatus for dry and wet processing |
KR101718518B1 (en) * | 2014-07-24 | 2017-03-22 | 최도현 | Single platform work piece processing apparatus for dry and wet processing |
KR101678367B1 (en) * | 2014-12-19 | 2016-11-22 | 주식회사 테스 | Substrate processing system |
KR102129773B1 (en) * | 2016-04-07 | 2020-07-03 | 최도현 | Single platform work piece processing apparatus for dry and wet processing |
EP3701561A4 (en) | 2017-10-23 | 2021-07-21 | Lam Research AG | Systems and methods for preventing stiction of high aspect ratio structures and/or repairing high aspect ratio structures |
WO2020072278A1 (en) | 2018-10-03 | 2020-04-09 | Lam Research Ag | Gas mixture including hydrogen fluoride, alcohol and an additive for preventing stiction of and/or repairing high aspect ratio structures |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953265A (en) * | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
JPH0590239A (en) * | 1991-09-30 | 1993-04-09 | Fujitsu Ltd | Cleaning method and cleaning device |
KR19980073956A (en) * | 1997-03-20 | 1998-11-05 | 윤종용 | In-situ cleaning device for semiconductor device and cleaning method of semiconductor device using same |
JP3035450B2 (en) * | 1994-07-19 | 2000-04-24 | 大日本スクリーン製造株式会社 | Substrate cleaning method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7568490B2 (en) * | 2003-12-23 | 2009-08-04 | Lam Research Corporation | Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids |
JP5016351B2 (en) * | 2007-03-29 | 2012-09-05 | 東京エレクトロン株式会社 | Substrate processing system and substrate cleaning apparatus |
JP5058085B2 (en) * | 2008-07-02 | 2012-10-24 | 東京エレクトロン株式会社 | Substrate cleaning device |
-
2011
- 2011-05-31 KR KR1020110051974A patent/KR101290527B1/en active IP Right Grant
-
2012
- 2012-05-30 WO PCT/KR2012/004268 patent/WO2012165861A2/en active Application Filing
- 2012-05-30 TW TW104108399A patent/TWI538035B/en active
- 2012-05-30 TW TW101119337A patent/TWI503877B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953265A (en) * | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
JPH0590239A (en) * | 1991-09-30 | 1993-04-09 | Fujitsu Ltd | Cleaning method and cleaning device |
JP3035450B2 (en) * | 1994-07-19 | 2000-04-24 | 大日本スクリーン製造株式会社 | Substrate cleaning method |
KR19980073956A (en) * | 1997-03-20 | 1998-11-05 | 윤종용 | In-situ cleaning device for semiconductor device and cleaning method of semiconductor device using same |
Also Published As
Publication number | Publication date |
---|---|
KR20120133341A (en) | 2012-12-10 |
TWI503877B (en) | 2015-10-11 |
KR101290527B1 (en) | 2013-07-30 |
WO2012165861A2 (en) | 2012-12-06 |
TW201248705A (en) | 2012-12-01 |
TWI538035B (en) | 2016-06-11 |
TW201523714A (en) | 2015-06-16 |
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