WO2012161561A1 - Procédé et appareil pour dépôt de nanomatériaux - Google Patents

Procédé et appareil pour dépôt de nanomatériaux Download PDF

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Publication number
WO2012161561A1
WO2012161561A1 PCT/MY2012/000105 MY2012000105W WO2012161561A1 WO 2012161561 A1 WO2012161561 A1 WO 2012161561A1 MY 2012000105 W MY2012000105 W MY 2012000105W WO 2012161561 A1 WO2012161561 A1 WO 2012161561A1
Authority
WO
WIPO (PCT)
Prior art keywords
sample
heating element
recess
holder
holding
Prior art date
Application number
PCT/MY2012/000105
Other languages
English (en)
Inventor
Teh Aun Shih
Daniel Bien Chia Sheng
Tan Kai SIN
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Publication of WO2012161561A1 publication Critical patent/WO2012161561A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • Embodiments of the present invention are directed generally to an apparatus and method for use in depositing nanomaterials, and in particular, a wafer heating apparatus and method thereof with generally improved and defined heating features.
  • CVD chemical vapour deposition
  • an apparatus for depositing nanomaterials comprising: at least one heating element; at least one sample holder (14) formed with a recess (14a) etched therethrough, said recess (14a) sized to fit a sample (10) and holding the sample (10) thereon; wherein one surface of the sample (10) is exposed to the heating element; at least one spacing member (16, 17) for holding the sample holder (14) in predetermined distance from that of the heating element; said spacing member (16, 17) is adjustably secured to the sample holder (14); at least one hole to channel in gases to be in contact with the sample (10); at least one high temperature substrate (12).
  • a method for depositing nanomaterials comprising the steps of: providing a heating element; providing a holder for a sample, etching a recess on said sample, said recess sized to fit and hold the sample; positioning the sample within the recess in a manner such that only one surface is exposed to the heating element; holding the holder of the sample in position with respect to the heating element; adjusting the position of the sample with respect to the heating element.
  • FIG 1 shows a conventional method of depositing nanomaterials
  • FIG 2 shows a block diagram of the apparatus in accordance with a preferred embodiment of the present invention
  • FIG 3 shows a view of the apparatus in accordance with the preferred embodiment of the present invention in effect
  • FIG 4 shows an example of a component in accordance with the preferred embodiment of the present invention in effect
  • FIG 5 shows an example of a component of the present invention
  • FIG 2 shows the conventional method of fabricating nanomaterials.
  • a thin layer of catalyst of 0.1-15.0 nm thickness is deposited onto an underlayer or support layer which is 5-50nm in thickness on a substrate (thickness >150 m).
  • the substrate/sample is then annealed to form nucleation sites and growth of the nanomaterial is initiated by introducing the process gasses as the feedstock.
  • Nanomaterial growth depends on pressures, gas flows, catalysts preparation and most importantly the deposition temperature. Based on the conventional methods, the nanomaterial growth typically occurs at the utmost top layer, thereby only the top surface needs to be heated to the right surface energies for growing the material.
  • FIG. 2 is a block diagram showing the apparatus in accordance to a preferred embodiment of the present invention, whereby the main components of the apparatus comprise of at least one sample (10) to be placed in contact with a substrate (12), a holder (14), which is adapted to hold the sample in a manner that heat is applied to a specific surface, at least one inlet or hole ( 5) adapted to channel in gases formed thereon; and at least one spacing element (16, 17) for holding the sample (10) and substrate (12) in position.
  • the main components of the apparatus comprise of at least one sample (10) to be placed in contact with a substrate (12), a holder (14), which is adapted to hold the sample in a manner that heat is applied to a specific surface, at least one inlet or hole ( 5) adapted to channel in gases formed thereon; and at least one spacing element (16, 17) for holding the sample (10) and substrate (12) in position.
  • the apparatus is assembled in a manner such that it inverts the samples/substrates so that the sample surface is directly exposed to the heat emanating from the heating element during deposition.
  • the substrate being adapted as the sample holder (14) may be formed from a suitable material that has high tolerance to heat, or absorbs heat.
  • the sample (10) is placed in a manner such that it is suitably held by the spacing members (16, 17).
  • a through opening or recess (14a) etched therethrough sized in a manner such that it can fit the sample (10) and at the same time holding the sample (10) thereon.
  • a pair of tongue or protrusions (14b, 14c) formed at the peripheral area of the recess (14a) to act as support protrusions for the sample ( 0). It is preferred that when fitted into the recess (14a), at least one surface of the sample (10) is exposed.
  • the spacing element (16, 17) may be formed from a suitable material that is also highly tolerant to heat and preferably of robust feature.
  • the spacing element (16, 17) is generally formed resembling a bolt, wherein at least one section is formed to larger than the other, thus forming the head section.
  • the apparatus is assembled in a manner such that at least one surface of the sample (10) is exposed to heat treatment, during fabrication of wafer apparatus, as shown in FIG 3. Still referring to FIG 2, the sample (10) is placed to fit the recess (14a) formed on the sample/substrate holder (14) and held therein, while exposing the selected surface for heating.
  • the spacing members (16, 17) are then positioned spaced apart at a predetermined distance from each other and arranged such that they provide a clamping effect for the sample holder (14). In this arrangement, the sample holder (14) is positioned in between the spacing members (16, 17). According to the preferred embodiment of the present invention, the position of the spacing members (16, 17) can be adjusted, or adjustably secured to the sample holder (14).
  • sample surface to heating element can be controlled.
  • heat exposure to the bottom layers and substrate is reduced.
  • the exposed surface of the sample (10) is preferably the top surface which is directed towards the heating element or heating stage (70).
  • Inlets (15) are sized to allow gas flow into the heating area during operation and thus to be in contact with the heated area or surface of the sample (10).
  • the gases are supplied as the feedstock for producing the respective nanomaterial.
  • the sample can be kept in position during deposition within the recess formed on the sample holder (14).
  • thermocouple (60) to monitor the temperature of the heating operation.
  • the under layers and substrate is less exposed to heat treatment.
  • the recess (14a) may be tailored for any sample shapes and sizes.
  • FIG 4 and FIG 5 depict examples of the sample holder (14) adapted for holding multiple dies of similar size and shape and a holder for holding wafers.
  • machining can be used to fashion a holder, with the criteria that the substrate is made of a high temperature material exceeding the required CVD deposition temperature.
  • the choice of utilising materials and substrates for nanomaterial growth which are usually not suitable at high temperatures such as polymers, glass and metals is made possible due to the reduced heat exposure to the substrate during the deposition process.
  • Other benefits of the apparatus above are that it is reconfigurable and reusable.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil servant au dépôt de nanomatériaux. Ledit appareil comprend : au moins un élément de chauffage ; au moins un porte-échantillon (14), formé avec un renfoncement (14a) qui est gravé à travers celui-ci, ledit renfoncement (14a) étant dimensionné pour s'ajuster à un échantillon (10) et maintenir l'échantillon (10), une surface de l'échantillon (10) se trouvant exposée à l'élément de chauffage ; au moins un élément d'espacement (16, 17) servant à maintenir le porte-échantillon (14) à une distance prédéterminée de l'élément de chauffage, ledit élément d'espacement (16, 17) étant fixé de manière réglable au porte-échantillon (14) ; au moins un trou servant de canal pour les gaz devant se trouver au contact de l'échantillon (10) ; et au moins un substrat haute température (12). Le renfoncement (14a) formé sur le porte-échantillon (14) selon la présente invention permet de n'exposer directement au chauffage qu'une seule surface de l'échantillon.
PCT/MY2012/000105 2011-05-24 2012-05-22 Procédé et appareil pour dépôt de nanomatériaux WO2012161561A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MYPI2011002305 2011-05-24
MYPI2011002305 2011-05-24

Publications (1)

Publication Number Publication Date
WO2012161561A1 true WO2012161561A1 (fr) 2012-11-29

Family

ID=47217464

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MY2012/000105 WO2012161561A1 (fr) 2011-05-24 2012-05-22 Procédé et appareil pour dépôt de nanomatériaux

Country Status (1)

Country Link
WO (1) WO2012161561A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6161499A (en) 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
US20080066684A1 (en) * 2006-09-15 2008-03-20 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6161499A (en) 1997-07-07 2000-12-19 Cvd Diamond Corporation Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma
US20080066684A1 (en) * 2006-09-15 2008-03-20 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects

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