WO2012146192A1 - Verre photovoltaïque à concentration de lumière à motif matriciel - Google Patents
Verre photovoltaïque à concentration de lumière à motif matriciel Download PDFInfo
- Publication number
- WO2012146192A1 WO2012146192A1 PCT/CN2012/074785 CN2012074785W WO2012146192A1 WO 2012146192 A1 WO2012146192 A1 WO 2012146192A1 CN 2012074785 W CN2012074785 W CN 2012074785W WO 2012146192 A1 WO2012146192 A1 WO 2012146192A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pattern
- concentrating photovoltaic
- glass
- photovoltaic glass
- height
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 93
- 239000011159 matrix material Substances 0.000 title claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- 235000012431 wafers Nutrition 0.000 abstract description 21
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the invention belongs to the technical field of photovoltaic glass, and particularly relates to a concentrating photovoltaic glass with a matrix pattern.
- silicon wafers which are the main packaging materials for solar photovoltaic cells, are the main raw materials for solar photovoltaic cells, and are also one of the main costs.
- the amount of silicon wafers directly affects solar photovoltaic cells.
- the cost and sales price, and the cost of solar photovoltaic cells will affect the application of solar photovoltaic power. If the silicon wafer in the solar photovoltaic cell is reduced, and the power generation is not reduced, the manufacturing cost of the solar photovoltaic cell will be greatly reduced.
- the object of the present invention is to provide a concentrating photovoltaic glass with a matrix pattern, which can achieve the effect of concentrating light through the change of the flower pattern, reduce the amount of silicon wafer on the solar photovoltaic cell, and greatly reduce the solar photovoltaic cell. manufacturing cost.
- one side of the glass is a flat surface, and the other side of the glass is provided with a uniformly distributed matrix lens unit, and the lens unit is a spherical lens unit.
- the top view projection of the lens unit is a square.
- Each two lens units are transitioned by a circular arc.
- the side length C of the single lens unit has a size ranging from 6 to 80 mm.
- the thickness E of the concentrating photovoltaic glass ranges from 3 to 10 mm.
- the total height El of the single lens unit ranges from 1 to 6 mm in size.
- the pattern height E2 on the four sides of the single lens unit ranges from 0.2 to 4 mm.
- the single lens unit has a side length C of 12 mm
- the concentrating photovoltaic glass has a thickness E of 5.8 mm
- the single lens pattern has a total height E1 of 2.638 mm
- the single lens pattern has four sides.
- the height E2 of the pattern is 1.236 mm.
- the side length C of the single lens is 20 mm
- the thickness E of the concentrating photovoltaic glass is 5.8 mm
- the total height E1 of the single lens pattern is 2.638 mm, on the four sides of the single lens pattern.
- the flower height E2 is 1.236 mm.
- the concentrating photovoltaic glass described in the specification is provided with a package side with a flat top surface.
- the concentrating photovoltaic glass with matrix pattern of the invention is used for concentrating solar photovoltaic cell packaging (see Fig. 4), 1 is a concentrating photovoltaic glass with a novel matrix pattern, and 2 is a silicon wafer in a solar photovoltaic cell, according to The focal length is different, there is a certain distance between the concentrating photovoltaic glass 1 and the silicon wafer 2, and the concentrating photovoltaic glass 1 and the silicon wafer 2 are packaged in a closed box such as an aluminum alloy.
- the concentrating photovoltaic glass has a flat surface on one side and a rectangular lens array on the other side.
- the silicon wafer 2 is packaged under the concentrating photovoltaic glass with a novel matrix pattern.
- Each lens has a rectangular silicon wafer underneath the lens, and the light beam passes through the glass 1.
- the lens unit after being refracted, is gathered into a small focal spot on the silicon wafer 2 (ie, forms a matrix focal spot) to achieve a concentrating effect and a high light transmittance. Since the silicon wafer is only required to be disposed at the focal spot position of the matrix, the amount of the silicon wafer is reduced, thereby reducing the production cost of the solar cell.
- Fig. 1 is a schematic overall view of Embodiment 1.
- Fig. 2 is a cross-sectional view showing the lens waveform of the first embodiment.
- Fig. 3 is a schematic overall view of the first embodiment.
- Fig. 4 is a cross-sectional view showing the lens waveform of the first embodiment.
- FIG. 5 is a schematic diagram of a light transmission principle of the present invention.
- Figure 6 is a schematic view of another light transmission principle of the present invention.
- the concentrating photovoltaic glass of the present embodiment is as shown in FIG. 1 and FIG. 2, the number of lenses is determined according to the length A and the width B of the glass plate, and the lens shape is a square spherical lens unit of CX C, and the single lens is projected in a square shape, square
- the side length is C
- the spherical radius is SR
- the glass height is
- the spherical pattern height is E 2
- each lens is transitioned by an arc.
- the concentrating photovoltaic glass with the new matrix pattern, the length, the width, the thickness, the side length of the single lens, the spherical radius, the height of the flower, etc. can be adjusted according to the actual situation.
- one of the models has a matrix pattern of concentrating photovoltaic glass with a length A of 480 ⁇ 0.2 mm and a width B of 420 ⁇ 0.2 mm.
- a 40 X 35 lens array is formed on one side of the glass, and the square length of the lens is C. It is 12 mm, the spherical radius is SR13.54 mm, the glass thickness E1 is 5.8 mm, the pattern height E2 is 2.638 mm, the spacing C between each lens is 12 mm, and the entire glass (including the lens) surface is free of ripples and irregularities.
- lens square side length C is 20 mm
- spherical radius is SR36.364
- mm glass thickness E1 is 4.5 mm
- pattern height E2 is 2.638 mm
- the spacing C between each lens is 20 mm
- the entire glass (including the lens) surface has no ripples and irregularities.
- the surface consists of a number of lens units that form a matrix lens structure. When the light passes through the lens unit, the effect of refraction focusing occurs. As shown in Fig.
- the light refracts the focus when it passes through the lens of the condensed ultra-white embossed glass 1, when the light reaches
- the silicon wafer 2 is gathered into a small focal spot, how many lens units are on the concentrated white embossed glass 1 , and the corresponding number of silicon wafers are packaged below, which will focus on the same number of focal spots, and are installed in the concentrated light super
- the length of the square silicon wafer 2 under the white embossed glass 1 is greatly reduced (relative to the condensed ultra-white embossed glass).
- the concentrating ultra-white embossed glass of the invention is used, the amount of the silicon wafer 2 is greatly reduced. .
- the concentrating photovoltaic glass having the novel matrix pattern of the present invention has a bottom surface which is a flat surface, a top surface of which is a matrix lens array, a rectangular array composed of a plurality of lenses uniformly distributed, and a single lens is projected in a plan view.
- Square each lens transitions from a circular arc.
- the periphery of the lens array is provided with a package side with a flat top surface.
- the concentrating photovoltaic glass plate has a height of Al and a plate width of Bl, wherein the pattern portion is A2 and B2, and the lens shape is a CX C square spherical lens unit.
- the number of lenses depends on the A2, B2, and C dimensions, and the thickness of the glass.
- E the total height of the pattern is El, and the height of the pattern on the four sides of a single rectangle is E2, and each lens is transitioned by a circular arc.
- the concentrating photovoltaic glass sheet of the present invention has a high A1 size ranging from 100 to 900, and a sheet width B1 having a size ranging from 120 to 1860.
- the concentrating photovoltaic glass of the present invention has a flower-shaped partial panel height A2 having a size ranging from 700 to 870, and a pattern partial panel width B2 having a size ranging from 90 to 1830.
- the side length C of the single lens unit has a size ranging from 6 to 80 mm.
- the thickness E of the concentrating photovoltaic glass ranges from 3 to 10 mm.
- the total height El of the single lens unit ranges from 1 to 6 mm in size.
- the pattern height E2 on the four sides of the single lens unit ranges from 0.2 to 4 mm.
- the plate height A1 is 450mm+0.3
- the part A2 with pattern is 420mm ⁇ 0.2
- the 15mm plane on both sides is used as the seal.
- the specification has an edge width of B1 of 510 mm ⁇ 0.3, wherein the part B2 of the pattern is 480 mm ⁇ 0.2, and each side has a plane of 15 mm;
- the single rectangular pattern of the utility model has a side length C of 12 mm and a glass thickness E of 5.8 mm.
- the total height E1 of the pattern is 2.638 mm ⁇ 0.015
- the height E2 of the pattern on the four sides of a single rectangle is 1.236 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the new single rectangular pattern square has a side length C of 8 mm, a glass thickness E of 4 mm, a total pattern height E1 of 1.6 mm ⁇ 0.015, and a pattern height E2 of four sides of a single rectangle of 0.8 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the new single rectangular pattern square has a side length C of 10 mm, a glass thickness E of 5 mm, a total pattern height E1 of 2.2 mm ⁇ 0.015, and a pattern height E2 of four sides on a single rectangle of 1.2 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the new single rectangular pattern has a square side length C of 14 mm, a glass thickness E of 6 mm, a total pattern height E1 of 2.6 mm ⁇ 0.015, and a pattern height E2 of four sides of a single rectangle of 1.4 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the new single rectangular pattern square has a side length C of 16 mm, a glass thickness E of 6 mm, a total pattern height E1 of 2.6 mm ⁇ 0.015, and a pattern height E2 of four sides of a single rectangle of 1.4 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the new single rectangular pattern square has a side length C of 18 mm, a glass thickness E of 6.8 mm, a total pattern height E1 of 2.6 mm ⁇ 0.015, and a pattern height E2 of four sides of a single rectangle of 1.4 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the single rectangular pattern of the utility model has a side length C of 20mm, a glass thickness E of 6.8mm, and a total height E1 of the pattern.
- the pattern height E2 on the four sides of a single rectangle is 1.4 mm.
- one of the models of concentrating photovoltaic glass with a matrix pattern has a plate height A1 of 800 mm+0.3, wherein the pattern A2 is 770 mm ⁇ 0.2, and each side has a 15 mm plane; the plate width B1 is 910mm ⁇ 0.3, in which part of the pattern B2 is 880mm ⁇ 0.2, and each side has a plane of 15mm; the single rectangular pattern of the utility model has a side length C of 22mm, a glass thickness E of 6.8mm, and a total height E1 of 2.6. Mm ⁇ 0.015, the height E2 of the pattern on the four sides of a single rectangle is 1.4 mm.
- one of the models of concentrating photovoltaic glass with a matrix pattern has a plate height A1 of 870 mm+0.3, wherein the pattern A2 is 840 mm ⁇ 0.2, and each side has a 15 mm plane; the plate width B1 is 990mm ⁇ 0.3, wherein the part B2 of the pattern is 960mm ⁇ 0.2, and each side has a plane of 15mm; the single rectangular pattern of the utility model has a side length C of 24mm, a glass thickness E of 6.8mm, and a total height E1 of 2.6. Mm ⁇ 0.015, the height E2 of the pattern on the four sides of a single rectangle is 1.4 mm.
- one of the models has a matrix pattern of concentrating photovoltaic glass, the board height A1 is 450mm+0.3, and the pattern part A2 is 420mm ⁇ 0.2, and the package side A3 with a width of 15mm on each side
- the board width B1 is 510 mm ⁇ 0.3
- the pattern portion B2 of the pattern is 480 mm ⁇ 0.2
- the package side B3 of 15 mm is left on both sides.
- the single rectangular pattern square length C of the present invention is 12 mm
- the thickness E of the concentrating photovoltaic glass is 5.8 mm
- the total height E1 of the pattern is 2.638 mm ⁇ 0.015
- the height E2 of the four sides of the single rectangle is 1.236 mm.
- one of the models has a concentrating photovoltaic glass with a matrix pattern, and the plate height A1 is
- the single rectangular pattern of the present invention has a side length C of 20 mm, a total height E1 of the pattern of 2.638 mm + 0.015, a pattern height E2 of four sides of a single rectangle of 1.236 mm, and a 40 X 35 lens array formed on one side of the glass.
- the thickness E of the concentrating photovoltaic glass of the utility model is 5.8 mm.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne un verre photovoltaïque à concentration de lumière à motif matriciel (1). Une face du verre est plane, et des unités de lentilles matricielles sont réparties de manière uniforme sur l'autre face du verre, l'unité de lentille étant une unité de lentille de surface sphérique. La projection vers le bas de l'unité de lentille est un carré. Le verre photovoltaïque à concentration de lumière (1) est utilisé pour encapsuler des cellules photovoltaïques solaires à concentration de lumière, ce qui permet de réduire la quantité de plaquettes de silicium (2) utilisées, et ainsi de diminuer les coûts de production de cellules solaires.
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201120132759.7 | 2011-04-29 | ||
CN 201120132759 CN202352705U (zh) | 2011-04-29 | 2011-04-29 | 一种聚光超白压花玻璃 |
CN2011202732453U CN202178279U (zh) | 2011-07-29 | 2011-07-29 | 用于太阳能光伏电池的具有矩阵花型的聚光光伏玻璃 |
CN201120273264.6 | 2011-07-29 | ||
CN2011202732650U CN202178280U (zh) | 2011-07-29 | 2011-07-29 | 具有新型矩阵花型的聚光光伏玻璃 |
CN201120273265.0 | 2011-07-29 | ||
CN2011202732646U CN202183404U (zh) | 2011-07-29 | 2011-07-29 | 一种用于太阳能光伏电池的聚光光伏玻璃 |
CN201120273245.3 | 2011-07-29 |
Publications (1)
Publication Number | Publication Date |
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WO2012146192A1 true WO2012146192A1 (fr) | 2012-11-01 |
Family
ID=47071605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2012/074785 WO2012146192A1 (fr) | 2011-04-29 | 2012-04-27 | Verre photovoltaïque à concentration de lumière à motif matriciel |
Country Status (1)
Country | Link |
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WO (1) | WO2012146192A1 (fr) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638110A (en) * | 1985-06-13 | 1987-01-20 | Illuminated Data, Inc. | Methods and apparatus relating to photovoltaic semiconductor devices |
CN1889277A (zh) * | 2006-07-18 | 2007-01-03 | 侯国华 | 太阳能聚光电池模块 |
CN201490203U (zh) * | 2009-09-08 | 2010-05-26 | 英利能源(中国)有限公司 | 一种光伏电池板 |
CN101937937A (zh) * | 2010-08-27 | 2011-01-05 | 成都钟顺科技发展有限公司 | 复眼式聚光太阳电池组件及其制造工艺 |
DE102010022969A1 (de) * | 2010-05-13 | 2011-11-17 | Thomas Samland | Solarmodul |
CN202178280U (zh) * | 2011-07-29 | 2012-03-28 | 河南思可达光伏材料股份有限公司 | 具有新型矩阵花型的聚光光伏玻璃 |
CN202178279U (zh) * | 2011-07-29 | 2012-03-28 | 河南思可达光伏材料股份有限公司 | 用于太阳能光伏电池的具有矩阵花型的聚光光伏玻璃 |
CN202183404U (zh) * | 2011-07-29 | 2012-04-04 | 河南思可达光伏材料股份有限公司 | 一种用于太阳能光伏电池的聚光光伏玻璃 |
-
2012
- 2012-04-27 WO PCT/CN2012/074785 patent/WO2012146192A1/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638110A (en) * | 1985-06-13 | 1987-01-20 | Illuminated Data, Inc. | Methods and apparatus relating to photovoltaic semiconductor devices |
CN1889277A (zh) * | 2006-07-18 | 2007-01-03 | 侯国华 | 太阳能聚光电池模块 |
CN201490203U (zh) * | 2009-09-08 | 2010-05-26 | 英利能源(中国)有限公司 | 一种光伏电池板 |
DE102010022969A1 (de) * | 2010-05-13 | 2011-11-17 | Thomas Samland | Solarmodul |
CN101937937A (zh) * | 2010-08-27 | 2011-01-05 | 成都钟顺科技发展有限公司 | 复眼式聚光太阳电池组件及其制造工艺 |
CN202178280U (zh) * | 2011-07-29 | 2012-03-28 | 河南思可达光伏材料股份有限公司 | 具有新型矩阵花型的聚光光伏玻璃 |
CN202178279U (zh) * | 2011-07-29 | 2012-03-28 | 河南思可达光伏材料股份有限公司 | 用于太阳能光伏电池的具有矩阵花型的聚光光伏玻璃 |
CN202183404U (zh) * | 2011-07-29 | 2012-04-04 | 河南思可达光伏材料股份有限公司 | 一种用于太阳能光伏电池的聚光光伏玻璃 |
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