WO2012133687A1 - バリア性蒸着フィルム - Google Patents
バリア性蒸着フィルム Download PDFInfo
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- WO2012133687A1 WO2012133687A1 PCT/JP2012/058438 JP2012058438W WO2012133687A1 WO 2012133687 A1 WO2012133687 A1 WO 2012133687A1 JP 2012058438 W JP2012058438 W JP 2012058438W WO 2012133687 A1 WO2012133687 A1 WO 2012133687A1
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- vapor deposition
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- metal
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D65/00—Wrappers or flexible covers; Packaging materials of special type or form
- B65D65/38—Packaging materials of special type or form
- B65D65/42—Applications of coated or impregnated materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/584—Non-reactive treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a barrier vapor-deposited film, and more particularly to a barrier vapor-deposited film having an excellent barrier property and comprising a vapor-deposited layer having a uniform film quality.
- Barrier-deposited films are mainly used as packaging materials for foods and pharmaceuticals to prevent the effects of oxygen and water vapor that cause changes in the quality of contents, and are used in liquid crystal display panels and EL display panels. In order to prevent the formed element from deteriorating performance due to contact with oxygen or water vapor, it is used as a packaging material for electronic devices and the like. In recent years, barrier vapor-deposited films are sometimes used for solar cells and the like for reasons such as imparting flexibility and impact resistance to portions where glass or the like has been conventionally used. Such a barrier vapor-deposited film generally has a configuration in which a barrier layer is formed on one side or both sides of a plastic film or the like as a base material.
- the barrier vapor-deposited film is formed by various methods such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), and any method can be used.
- the conventional barrier vapor-deposited film only has an oxygen transmission rate (OTR) of about 2 cc / (m 2 ⁇ day) and a water vapor transmission rate (WVTR) of about 2 g / (m 2 ⁇ day), which is higher. When used in applications that require barrier properties, it is still insufficient.
- the problem to be solved by the present invention is to obtain a highly barrier vapor-deposited film having a uniform film quality even in roll-to-roll vapor deposition, and having a vapor deposition layer having a dense film density and a high barrier property.
- the present invention (1) A barrier vapor-deposited film comprising at least one of the following vapor-deposited layers (a) on at least one surface of a substrate, Vapor deposition layer (a): 10-500 nm thick vapor deposition layer made of metal oxide.
- Vapor deposition layer (a) 10-500 nm thick vapor deposition layer made of metal oxide.
- the vapor deposition layer formed by physical vapor deposition is a 10 to 500 nm thick vapor deposition layer made of a metal oxide, and the vapor deposition layer was analyzed in the depth direction by X-ray photoelectron spectroscopy (ESCA).
- ESA X-ray photoelectron spectroscopy
- the average value of the element ratio [oxygen (O) / metal] of oxygen (O) to metal is 1.20 or more and 1.90 or less, and the maximum and minimum values of [oxygen (O) / metal]
- X-ray photoelectron spectroscopy (ESCA) is performed in the same manner as described above for nine points where the width of the barrier vapor-deposited film is removed from both ends of the film width by 10 at equal intervals.
- the average value of [oxygen (O) / metal] is 1.20 or more and 1.90 or less at each point, and [oxygen (O) The barrier vapor-deposited film according to any one of (1) to (6) above, wherein the difference between the maximum value and the minimum value of (O) / metal] is 0.35 or less,
- the present invention it is possible to obtain a highly barrier vapor-deposited film having a uniform film quality and having a dense vapor-deposited layer having a dense and high barrier property from the substrate side to the surface side.
- the barrier vapor-deposited film of the present invention is a barrier vapor-deposited film having at least one vapor-deposited layer (a) described below on at least one surface of a substrate.
- Vapor deposition layer (a) 10-500 nm thick vapor deposition layer made of metal oxide.
- ESA X-ray photoelectron spectroscopy
- oxygen (O) and metal The average value of the element ratio [oxygen (O) / metal] is 1.20 or more and 1.90 or less, and the difference between the maximum value and the minimum value of [oxygen (O) / metal] is 0.35 or less.
- the average value of the element ratio [oxygen (O) / metal] of oxygen (O) to metal in the vapor deposition layer is 1.20 or more and 1.90 or less, and the maximum value of [oxygen (O) / metal] By setting the difference between the minimum values to 0.35 or less, it is possible to obtain a vapor deposition layer having a dense film, a high barrier property, and a stable vapor deposition layer from the substrate side to the surface side.
- the element ratio of oxygen (O) to metal [oxygen (O) / metal] is sometimes referred to as the oxidation number.
- the barrier vapor-deposited film of the present invention has a vapor-deposited layer on at least one surface of the substrate, and the substrate is preferably a plastic film, particularly preferably a transparent thermoplastic polymer film.
- the raw material any resin that can be used for ordinary packaging materials can be used without particular limitation.
- polyolefins such as homopolymers or copolymers such as ethylene, propylene and butene, amorphous polyolefins such as cyclic polyolefin, polyesters such as polyethylene terephthalate and polyethylene-2,6-naphthalate, nylon 6, nylon 66, polyamide such as nylon 12, copolymer nylon, polyvinyl alcohol, ethylene-vinyl acetate copolymer partial hydrolyzate (EVOH), polyimide, polyetherimide, polysulfone, polyethersulfone, polyetheretherketone, polycarbonate, Examples include polyvinyl butyral, polyarylate, fluororesin, acrylate resin, and biodegradable resin.
- polyester, polyamide, polyolefin, and biodegradable resin are preferable from the viewpoint of film strength and cost.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are particularly preferable from the viewpoint of film properties.
- the plastic film is a known additive such as an antistatic agent, a light blocking agent, an ultraviolet absorber, a plasticizer, a lubricant, a filler, a colorant, a stabilizer, a lubricant, a crosslinking agent, an antiblocking agent, an oxidation agent.
- An inhibitor or the like can be contained.
- the plastic film is formed by using the above material, but when used as a substrate, it may be unstretched or stretched. Moreover, you may laminate
- a plastic film can be produced by a conventionally known method. For example, the material is melted by an extruder, extruded by an annular die or a T-die, and rapidly cooled to be substantially amorphous and not oriented. A stretched film can be produced. The unstretched film is subjected to a known method such as uniaxial stretching, tenter sequential biaxial stretching, tenter simultaneous biaxial stretching, tubular simultaneous biaxial stretching, or the like. A film stretched in a uniaxial direction or a biaxial direction can be produced by stretching in a direction (horizontal axis) perpendicular thereto.
- the thickness of the substrate is usually selected in the range of 5 to 500 ⁇ m, preferably 10 to 200 ⁇ m, depending on its use, from the viewpoint of mechanical strength, flexibility, transparency, etc. as the substrate, and the thickness is large. Includes sheet-like ones. Moreover, there is no restriction
- the vapor deposition layer (a) provided on the substrate has a thickness of 10 to 500 nm and is made of a metal oxide.
- the vapor deposition layer is formed in the depth direction by X-ray photoelectron spectroscopy (ESCA) as described later.
- the average value of the oxygen (O) to metal element ratio [oxygen (O) / metal] is 1.20 or more and 1.90 or less, and the maximum value of [oxygen (O) / metal]. And the difference between the minimum values is 0.35 or less.
- the average value of [oxygen (O) / metal] is preferably 1.20 or more and 1.70 or less, and more preferably 1.20 or more and 1.45 or less in terms of barrier properties. Further, the difference between the maximum value and the minimum value of [oxygen (O) / metal] is more preferably 0.2 or less, and preferably 0.1 or less, in order to reduce the change over time in the barrier property. More preferably, the closer to 0, the more preferable.
- the above [oxygen (O) / metal] is a value obtained by analyzing the center point in the width direction of the barrier vapor-deposited film by ESCA. In a portion excluding 3% of the width of the film (3% of the length in the film width direction) from both ends of the film width, the width (length in the width direction) of the portion is divided into 10 at equal intervals 9 When the deposited layer (a) was analyzed in the depth direction by X-ray photoelectron spectroscopy (ESCA) in the same manner as described above, the average value of [oxygen (O) / metal] at each point was 1.
- the vapor deposition layer (a) in the width direction of the barrier vapor deposition film It is preferable because it becomes uniform and dense, and has a higher barrier property and a stable deposited layer. Furthermore, the average value of [oxygen (O) / metal] at each point is 1.20 or more and 1.90 or less, and the average value of [oxygen (O) / metal] at the center point is 0.8. The effect is more remarkable when the difference between the maximum value and the minimum value of [oxygen (O) / metal] is 0.35 or less. It is preferable.
- the thickness of the vapor deposition layer (a) is preferably 10 to 100 nm, and more preferably 10 to 50 nm.
- the metal include silicon, aluminum, magnesium, zinc, tin, nickel, and titanium, and silicon (Si) is particularly preferable.
- the vapor deposition layer (a) may contain other elements such as nitrogen and carbon without departing from the spirit of the present invention.
- the vapor deposition layer (a) can be formed by physical vapor deposition (PVD) or chemical vapor deposition (CVD).
- PVD physical vapor deposition
- CVD chemical vapor deposition
- physical vapor deposition include vacuum deposition, ion plating, and sputtering
- chemical vapor deposition includes plasma-enhanced plasma CVD, thermal CVD, photo-CVD, MOCVD, and thermal contact.
- Cat-CVD catalytic chemical vapor deposition
- Cat-CVD catalytic chemical vapor deposition
- the vapor deposition layer (a) is preferably formed by a physical vapor deposition method, particularly a vacuum vapor deposition method, because a uniform thin film having a high gas barrier property can be obtained.
- the barrier vapor deposition film of the present invention may further have a vapor deposition layer in addition to the vapor deposition layer (a).
- the multilayer vapor deposition layer may be a vapor deposition layer formed by physical vapor deposition (hereinafter may be referred to as PVD layer) and a vapor deposition layer formed by chemical vapor deposition (hereinafter referred to as CVD layer). And a multilayer vapor deposition layer in which at least one of the PVD layers is a vapor deposition layer (a). Each vapor deposition layer may have the same or different composition.
- PVD layers and CVD layers are alternately formed, for example, a multilayer vapor deposition layer having a PVD layer, a CVD layer, and a PVD layer in this order, and at least one of the PVD layers is a vapor deposition layer (a).
- a CVD layer By forming a CVD layer on the PVD layer, defects such as defects generated in the PVD layer are sealed, and gas barrier properties and interlayer adhesion are improved.
- the thickness of the PVD layer is generally 0.1 to 500 nm, but is preferably 5 to 100 nm, more preferably 10 to 100 nm, and particularly preferably 10 to 50 nm from the viewpoint of gas barrier properties and film productivity.
- the material constituting the PVD layer include silicon, aluminum, magnesium, zinc, tin, nickel, titanium, diamond-like carbon, and oxides, carbides, nitrides, or mixtures thereof.
- metal oxides such as aluminum oxide, silicon oxide, silicon oxynitride and silicon oxynitride carbide, metal nitride such as silicon nitride, and Diamond-like carbon is preferred.
- metal oxides such as aluminum oxide, silicon oxide, silicon oxynitride and silicon oxynitride carbide, metal nitride such as silicon nitride, and Diamond-like carbon is preferred.
- aluminum oxide, silicon oxide, silicon oxynitride, silicon oxynitride carbide, and silicon nitride are preferable in that high gas barrier properties can be stably maintained. These may be used alone or in combination of two or more.
- the PVD layer may contain other elements without departing from the spirit of the present invention.
- the lower limit of the thickness of the CVD layer is preferably 0.1 nm, and more preferably 0.5 nm, as the minimum film thickness for exhibiting a sealing effect on the PVD layer. If the thickness is within the above range, the adhesion and gas barrier properties are good, which is preferable. From the above viewpoint, the thickness of the CVD layer is preferably 0.1 nm or more and less than 20 nm, more preferably 0.1 nm or more and less than 10 nm, and further preferably 0.1 nm or more and less than 5 nm. It is particularly preferably 0.1 nm or more and less than 3 nm.
- the surface roughness (measured by AFM) of the PVD layer is preferably about 5 nm or less, because vapor deposition particles are densely deposited, which is preferable for exhibiting barrier properties.
- the thickness of the CVD layer is set to be less than 20 nm, the crest portion of the vapor deposition particles is covered very thinly (or partially exposed) while filling the open vacancies existing in the valleys between the vapor deposition particles. Therefore, the adhesion between PVD layers can be further enhanced.
- the thickness of the CVD layer is 0.1 nm or more, the effect of sealing the open pores of the lower PVD layer described above is expressed and the surface becomes smooth at the same time, when the upper PVD layer is deposited, Since the surface diffusion of the vapor deposition particles becomes good and the particles are more densely deposited, the barrier property is further improved.
- the thickness of the CVD layer can be measured by the method described later.
- the CVD layer has a carbon content measured by X-ray photoelectron spectroscopy (ESCA) of 20 at. %, More preferably 10 at. %, Particularly preferably 5 at. %.
- ESA X-ray photoelectron spectroscopy
- the carbon content of the CVD layer is 0.5 at. % Or more, preferably 1 at. % Or more, more preferably 2 at. % Or more is particularly preferable.
- the carbon content in the CVD layer is preferably 0.5 at. % Or more, 20 at. %, More preferably 1 at. % Or more, 10 at. %, Particularly preferably 2 at. % Or more, 5 at. %.
- “at.%” Indicates an atomic composition percentage (atomic%).
- the CVD layer examples include, as described above, a layer made of at least one selected from metals, metal oxides, metal nitrides, and diamond-like carbon. From the viewpoint of gas barrier properties and adhesion, metals such as silicon and titanium are used. Further, diamond-like carbon or the like is preferable, and the metal oxide or metal nitride is preferably the above metal oxide, nitride, or a mixture thereof from the viewpoint of gas barrier properties and adhesion. In the present invention, the CVD layer is more preferably at least one selected from silicon oxide, silicon nitride, silicon oxynitride, titanium oxide and diamond-like carbon from the above viewpoint.
- CVD As a method for forming the CVD layer, plasma CVD is preferable because it is necessary to increase the film forming speed to achieve high productivity and to avoid thermal damage to the base material. Cat-CVD is preferable in terms of excellent quality.
- the CVD layer formed by plasma CVD include at least one layer selected from metals, metal oxides, metal nitrides, and the like obtained by plasma decomposition of organic compounds.
- a compound such as a silicon compound can be used in a gas, liquid, or solid state at normal temperature and pressure.
- gas it can be introduced into the discharge space as it is, but in the case of liquid or solid, it is used after being vaporized by means such as heating, bubbling, decompression or ultrasonic irradiation.
- the solvent may be diluted with a solvent, and an organic solvent such as methanol, ethanol, n-hexane, or a mixed solvent thereof may be used as the solvent.
- silicon compound examples include silane, tetramethoxysilane, tetraethoxysilane, tetra n-propoxysilane, tetraisopropoxysilane, tetra n-butoxysilane, tetrat-butoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, and diethyldimethoxy.
- Silane diphenyldimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, phenyltriethoxysilane, (3,3,3-trifluoropropyl) trimethoxysilane, hexamethyldisiloxane, bis (dimethylamino) dimethylsilane, bis (Dimethylamino) methylvinylsilane, bis (ethylamino) dimethylsilane, N, O-bis (trimethylsilyl) acetamide, bis (trimethylsilyl) carbodiimide, diethyla Notrimethylsilane, dimethylaminodimethylsilane, hexamethyldisilazane, hexamethylcyclotrisilazane, heptamethyldisilazane, nonamethyltrisilazane, octamethylcyclotetrasilazane, tetraki
- titanium compounds include titanium tetrabutoxide, tetranormal butyl titanate, butyl titanate dimer, tetra (2-ethylhexyl) titanate, tetramethyl titanate, titanium alkoxides, titanium lactate, titanium acetylacetonate, and titanium tetraacetylacetonate.
- titanium chelates such as polytitanium acetylacetonate, titanium octylene glycolate, titanium ethyl acetoacetate, and titanium triethanolaminate.
- FIG. 1 The schematic of an example of the vapor deposition apparatus which can manufacture the barriering vapor deposition film of this invention in each of FIG.1 and FIG.2 is shown.
- the vapor deposition apparatus 1 which manufactures the barriering vapor deposition film of this invention is the evaporation source 2, the roll 3, the unwinding roll 4, the winding roll 5, and the vapor deposition tank (A) which evaporates vapor deposition raw materials, such as a silicon oxide. ) And unwinding / winding tank (B).
- the substrate is unwound by an unwinding roll 4, and then silicon oxide or the like is vacuum-deposited on the substrate in a vapor deposition tank (A), and the substrate is wound by a winding roll 5.
- a vapor deposition film is continuously manufactured by a roll-to-roll method.
- the pressure in the vapor deposition layer (A) is usually adjusted to be lower than the pressure in the vapor deposition tank (B).
- the adjustment is performed, for example, by constantly degassing each tank using a vacuum pump, thereby reducing gas such as oxygen flowing into the vapor deposition tank (A) and preventing a pressure change in the vapor deposition tank (A). be able to.
- an exhaust tank (C) (sometimes referred to as a buffer tank) may be provided between the vapor deposition tank (A) and the unwinding / winding tank (B) to perform exhaust. By providing the exhaust tank (C), it is possible to further reduce the gas flowing into the vapor deposition tank (A), and to prevent a pressure change in the vapor deposition tank (A).
- the pressure in the vapor deposition tank (A) is preferably 2.5 ⁇ 10 ⁇ 2 Pa or less.
- the (pressure in the unwinding / winding tank (B)) / (pressure in the vapor deposition tank (A)) is preferably 50 or less, more preferably 20 or less, still more preferably 5 or less, particularly It is preferable that there is no pressure difference because the gas flowing into the vapor deposition tank (A) is reduced and the pressure in the vapor deposition tank (A) can be prevented from changing.
- a gas such as oxygen or a gas having low reactivity may be introduced during film formation.
- the pressure during vapor deposition from the beginning to the end of vapor deposition becomes uniform, and the average value of [oxygen (O) / metal] is 1.20.
- the deposited layer (a) in which the difference between the maximum value and the minimum value of [oxygen (O) / metal] is 1.35 or less and 0.35 or less.
- the average value of [oxygen (O) / metal] is preferably 1.20 or more and 1.70 or less, more preferably 1.20 or more and 1.45 or less in terms of barrier properties. . Further, the difference between the maximum value and the minimum value of [oxygen (O) / metal] is more preferably 0.2 or less in order to improve the uniformity of the deposited layer and to reduce the change with time in the barrier property. Preferably, it is more preferably 0.1 or less, and it is especially preferable that it is close to 0.
- the pressure during vapor deposition from the beginning to the end of vapor deposition becomes uniform, and 3% of the width of the barrier vapor deposited film (in the film width direction) X-ray photoelectron spectroscopy in the same manner as described above with respect to nine points where the width (length in the width direction) is divided into 10 at equal intervals in the portion excluding 3% of the length) from the both ends of the film width.
- the average value of [oxygen (O) / metal] is 1.20 or more and 1.90 or less at each point, and The difference between the maximum value and the minimum value of [oxygen (O) / metal] can be set to 0.35 or less.
- the difference between the maximum value and the minimum value of [oxygen (O) / metal] of the vapor deposition layer (a) can be further reduced, that is, the vapor deposition layer can be made uniform. Furthermore, it is preferable to arrange a plurality of vapor deposition sources in the direction of travel of the base material, and it is more effective if the distance from the base material and the evaporation direction of the vapor deposition from the vapor deposition source are the same in each vapor deposition source.
- the vapor deposition tank (A) by shortening the moving distance of the base material on the roll from the start to the end of the vapor deposition, or by providing a shielding plate for limiting the film forming range on the roll in the vapor deposition tank (A). Since the film is formed in a range almost immediately above the vapor deposition source, the difference between the maximum value and the minimum value of [oxygen (O) / metal] of the vapor deposition layer (a) can be reduced.
- the deposition method of the vapor deposition layer (a) may be performed singly or in combination.
- the vapor deposition layer in the barrier vapor deposition film of the present invention may be a single layer, but it is preferable that the vapor deposition layer is a multilayer vapor deposition layer of two or more layers including the vapor deposition layer (a) because the barrier property is further improved. That's right.
- the multilayer vapor deposition layer as described above, there is a multilayer vapor deposition layer having a PVD layer and a CVD layer, and at least one of the PVD layers is the vapor deposition layer (a).
- the PVD layer is formed in order to form a dense vapor deposition layer, for example, under reduced pressure, preferably while conveying the substrate.
- the pressure for forming the PVD layer is preferably 1 ⁇ 10 ⁇ 7 to 1 Pa, more preferably 1 ⁇ 10 ⁇ 6 to 1 ⁇ 10 ⁇ 1 Pa, and even more preferably 1 ⁇ from the viewpoints of vacuum exhaust capability and barrier properties. 10 ⁇ 4 to 1 ⁇ 10 ⁇ 2 Pa. If it is in the said range, sufficient gas-barrier property will be acquired, and it is excellent also in transparency, without generating a crack and peeling in a PVD layer.
- the CVD layer is preferably formed at a conveyance speed of the substrate of 100 m / min or more from the viewpoint of improving productivity.
- the conveyance speed of the substrate is more preferably 200 m / min or more.
- the pressure for forming the CVD layer is preferably reduced under reduced pressure in order to form a dense vapor deposition layer, and is preferably 10 Pa or less, more preferably 1 ⁇ 10 ⁇ 2 from the viewpoint of film formation speed and barrier properties. It is more preferably in the range of ⁇ 10 Pa, more preferably 1 ⁇ 10 ⁇ 1 to 1 Pa.
- This CVD layer can be subjected to a crosslinking treatment by electron beam irradiation in order to improve water resistance and durability.
- the CVD layer is formed by evaporating the raw material compound and introducing it into a vacuum apparatus as a raw material gas, direct current (DC) plasma, low frequency plasma, high frequency (RF) plasma, pulse wave plasma, tripolar structure plasma, It can be performed by converting into plasma with a low temperature plasma generator such as microwave plasma, downstream plasma, columnar plasma, plasma assisted epitaxy or the like. From the viewpoint of plasma stability, a radio frequency (RF) plasma apparatus is more preferable.
- RF radio frequency
- each vapor deposition layer after the formation of each vapor deposition layer, the pressure in the vapor deposition tank is returned to the vicinity of atmospheric pressure, and the vacuum is re-evacuated to perform the subsequent process. It is preferable to carry out. Similarly, from the viewpoint of productivity, it is preferable to form each vapor deposition layer while transporting the film.
- anchor coat layer In the present invention, in order to improve the adhesion between the base material and the vapor deposition layer, it is preferable to provide an anchor coat layer by applying an anchor coating agent between the base material and the vapor deposition layer.
- an anchor coating agent from the viewpoint of productivity, polyester resin, urethane resin, acrylic resin, nitrocellulose resin, silicon resin, vinyl alcohol resin, polyvinyl alcohol resin, ethylene vinyl alcohol resin, vinyl System-modified resins, isocyanate group-containing resins, carbodiimide resins, alkoxyl group-containing resins, epoxy resins, oxazoline group-containing resins, modified styrene resins, modified silicone resins, polyparaxylylene resins, etc.
- the anchor coat layer is optionally provided with a silane coupling agent, a titanium coupling agent, an alkyl titanate, inorganic particles, an ultraviolet absorber, a weathering stabilizer and other stabilizers, a lubricant, an anti-blocking agent and an antioxidant. Etc. can be contained.
- the thickness of the anchor coat layer provided on the substrate is usually 0.1 to 5000 nm, preferably 1 to 2000 nm, more preferably 1 to 1000 nm. If it is within the above range, the slipperiness is good, there is almost no peeling from the base material due to the internal stress of the anchor coat layer itself, and a uniform thickness can be maintained, and also in the adhesion between layers Are better. Moreover, in order to improve the applicability
- the protective layer is preferably provided in the uppermost layer.
- the resin for forming the protective layer both solvent-based and water-based resins can be used. Specifically, polyester resins, urethane resins, acrylic resins, polyvinyl alcohol resins, ethylene Unsaturated carboxylic acid copolymer resin, ethylene vinyl alcohol resin, vinyl modified resin, nitrocellulose resin, silicone resin, isocyanate resin, epoxy resin, oxazoline group-containing resin, modified styrene resin, modified silicone resin, etc. Can be used alone or in combination of two or more.
- the above aqueous resin is particularly preferable from the viewpoint of improving the gas barrier property of the vapor deposition layer.
- a polyvinyl alcohol resin, an ethylene vinyl alcohol resin, and an ethylene / unsaturated carboxylic acid copolymer resin are preferable.
- the protective layer may contain one or more inorganic particles selected from silica sol, alumina sol, particulate inorganic filler, and layered inorganic filler in order to improve barrier properties, wear properties, and slipperiness.
- the protective layer may be a layer made of an inorganic particle-containing resin formed by polymerizing the resin raw material in the presence of the inorganic particles.
- the thickness of the protective layer is preferably 0.05 to 10 ⁇ m, more preferably 0.1 to 3 ⁇ m from the viewpoint of printability and workability.
- a known coating method is appropriately adopted as the formation method. For example, any method such as a reverse roll coater, a gravure coater, a rod coater, an air doctor coater, a spray or a coating method using a brush can be used. Moreover, you may immerse a vapor deposition film in the resin liquid for protective layers. After the application, moisture can be evaporated using a known drying method such as hot air drying at a temperature of about 80 to 200 ° C., heat drying such as hot roll drying, or infrared drying. Thereby, the barriering laminated film which has a uniform protective layer is obtained.
- a barrier laminate film in which a plastic film is provided on the vapor deposition layer or the protective layer is used for various applications.
- the thickness of the plastic film is usually selected in the range of 5 to 500 ⁇ m, preferably 10 to 200 ⁇ m, depending on the application, from the viewpoints of mechanical strength, flexibility, transparency and the like.
- the width and length of the film are not particularly limited and can be appropriately selected according to the intended use.
- heat-sealable resins include known resins such as polyethylene resins, polypropylene resins, ethylene-vinyl acetate copolymers, ionomer resins, acrylic resins, and biodegradable resins.
- the barrier laminate film there may be mentioned one in which a printing layer is formed on a vapor deposition layer or a protective layer and a heat seal layer is further laminated thereon.
- a printing ink for forming the printing layer aqueous and solvent-based resin-containing printing inks can be used.
- the resin used for the printing ink include acrylic resins, urethane resins, polyester resins, vinyl chloride resins, vinyl acetate copolymer resins, and mixtures thereof.
- antistatic agents for printing inks, antistatic agents, light shielding agents, ultraviolet absorbers, plasticizers, lubricants, fillers, colorants, stabilizers, lubricants, antifoaming agents, crosslinking agents, antiblocking agents, antioxidants, etc.
- plasticizers for printing inks, antistatic agents, light shielding agents, ultraviolet absorbers, plasticizers, lubricants, fillers, colorants, stabilizers, lubricants, antifoaming agents, crosslinking agents, antiblocking agents, antioxidants, etc.
- lubricants for printing inks, antistatic agents, light shielding agents, ultraviolet absorbers, plasticizers, lubricants, fillers, colorants, stabilizers, lubricants, antifoaming agents, crosslinking agents, antiblocking agents, antioxidants, etc.
- [oxygen (O) / metal] is obtained based on measurement by X-ray photoelectron spectroscopy (ESCA), and in a region where the content ratio of carbon (C) in the vapor deposition layer is 3% or less of the whole element. Value. That is, in the measurement by X-ray photoelectron spectroscopy (ESCA), for example, a portion where the carbon content is considered to have increased due to contamination of the surface of the vapor deposition layer due to the handling of the vapor deposition layer or the influence of the substrate or the like. It means the measured value in the excluded area.
- the average value, maximum value, and minimum value of [oxygen (O) / metal] can be obtained from a chart of X-ray photoelectron spectroscopy (ESCA).
- Water vapor transmission rate (water vapor transmission rate)> About each barrier vapor deposition film after vapor deposition layer formation, the water vapor transmission rate was evaluated with the following method. Using two gas barrier laminated films each having a moisture permeable area of 10.0 cm ⁇ 10.0 cm square, a bag is prepared in which about 20 g of anhydrous calcium chloride is added as a hygroscopic agent with the vapor deposition layer side facing outside, and the four sides are sealed. Was put in a constant humidity device at a temperature of 40 ° C. and a relative humidity of 90% RH, and the moisture permeability (g / m 2 ⁇ day) on the first day was calculated by the following formula.
- the measurement was performed under the conditions of an X-ray gun having a spot size of 400 ⁇ m, a cathode HT of 12,000 V, a beam of 6 mA, and an ion gun of Ar atmosphere, ion energy of 1000 V, electron energy of 120 V, and electron emission of 10 mA.
- the element ratio O / Si was calculated from the elemental composition of Si and O.
- silicon dioxide was measured using the same apparatus, and the value of element ratio O / Si was correct
- amended using the comparison coefficient with O / Si 2.
- the measurement of the film thickness of the vapor deposition layer was performed using fluorescent X-rays.
- This method uses the phenomenon of emitting fluorescent X-rays peculiar to atoms when they are irradiated with X-rays, and knowing the number (amount) of atoms by measuring the intensity of emitted fluorescent X-rays. I can do it. Specifically, a thin film having two known thicknesses is formed on the film, the specific fluorescent X-ray intensity emitted for each is measured, and a calibration curve is created from this information. Similarly, the fluorescent X-ray intensity was measured for the measurement sample, and the film thickness was determined from the calibration curve.
- Example 1 A biaxially stretched polyethylene terephthalate film having a thickness of 12 ⁇ m is used as a substrate, and the vacuum deposition apparatus shown in FIG. 1 (film unwinding / winding tank pressure: 6.3 ⁇ 10 ⁇ 2 Pa) is used on the corona-treated surface.
- Film unwinding / winding tank pressure: 6.3 ⁇ 10 ⁇ 2 Pa was used on the corona-treated surface.
- the obtained barrier vapor-deposited film was subjected to film thickness measurement using fluorescent X-rays and depth direction analysis using an X-ray photoelectron spectrometer (ESCA).
- a urethane adhesive (containing “AD900” and “CATRT85” manufactured by Toyo Morton Co., Ltd.
- Example 2 to 5 and Comparative Example 1 A barrier vapor deposition film was obtained in the same manner as in Example 1 except that the vapor deposition conditions by PVD were as shown in Table 1. In Example 4, two PVD layers were formed. Further, in Example 5, after forming the PVD layer, in the same vacuum deposition apparatus, the molar ratio of HMDSN (hexamethyldisilazane), nitrogen and Ar gas was 1: 7 without returning the pressure to atmospheric pressure. : 7, and a CVD layer (SiONC (silicon oxycarbonitride)) was formed as plasma under a vacuum of 0.4 Pa, and a PVD layer was further formed thereon.
- HMDSN hexamethyldisilazane
- Ar gas was 1: 7 without returning the pressure to atmospheric pressure.
- a CVD layer SiONC (silicon oxycarbonitride)
- the film thickness measurement by fluorescent X-rays and the depth direction analysis with an X-ray photoelectron spectrometer (ESCA) were performed. Furthermore, using the obtained barrier vapor-deposited film, the moisture permeability of the laminated film obtained in the same manner as in Example 1 was evaluated. The results are shown in Table 1.
- Comparative Example 2 A biaxially stretched polyethylene terephthalate film having a thickness of 12 ⁇ m is used as a substrate, and the vacuum deposition apparatus shown in FIG. 1 (film unwinding / winding tank pressure: 5.8 ⁇ 10 ⁇ 2 Pa) is used on the corona-treated surface. SiO was evaporated by a heating method under a vacuum of 9.4 ⁇ 10 ⁇ 3 Pa, and oxygen gas was introduced into the vapor deposition tank to form a SiOx vapor deposition layer. The obtained barrier vapor-deposited film was subjected to film thickness measurement using fluorescent X-rays and depth direction analysis using an X-ray photoelectron spectrometer (ESCA). Furthermore, using the obtained barrier vapor-deposited film, the moisture permeability of the laminated film obtained in the same manner as in Example 1 was evaluated. The results are shown in Table 1.
- the average value of the O / Si of the vapor deposition layer is in the range of 1.20 to 1.90, and the maximum / minimum difference between the maximum value of the O / Si value and the minimum value of the vapor deposition layer is 0.35.
- the barrier property is good from the beginning of the measurement, and further, the difference between the moisture permeability on the first day of the measurement and the moisture permeability on the 14th day when the barrier property is stabilized thereafter. Is 1.00 (g / m 2 ⁇ day) or less, and it is understood that the change with time of the barrier property is small.
- evaporation apparatus 2 evaporation source 3: roll 4: unwinding roll 5: winding roll 6: exhaust port (A): vapor deposition tank (B): unwinding / winding tank (C): exhaust tank
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Abstract
Description
このようなバリア性蒸着フィルムは、プラスチックフィルム等を基材として、その片面または両面にバリア層を形成する構成をとるのが一般的である。そして、当該バリア性蒸着フィルムは、化学的気相蒸着法(CVD)、物理的気相蒸着法(PVD)等の様々な方法で形成されるが、何れの方法を用いた場合であっても、従来バリア性蒸着フィルムは、2cc/(m2・日)程度の酸素透過率(OTR)や、2g/(m2・日)程度の水蒸気透過率(WVTR)を有するにすぎず、より高いバリア性を必要とする用途に使用される場合には、未だ不十分なものであった。
(1)基材の少なくとも一方の面に下記の蒸着層(a)を少なくとも一層有することを特徴とするバリア性蒸着フィルム、
蒸着層(a):金属酸化物よりなる厚さ10~500nm蒸着層であり、X線光電子分光法(ESCA)により該蒸着層を深さ方向に分析した際に、酸素(O)と金属の元素比[酸素(O)/金属]の平均値が1.20以上、1.90以下、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である
(2)金属が珪素(Si)である上記(1)に記載のバリア性蒸着フィルム、
(3)蒸着層(a)が物理的気相蒸着法により形成した蒸着層である上記(1)または(2)に記載のバリア性蒸着フィルム、
(4)蒸着層(a)を含む多層蒸着層を有する上記(1)~(3)のいずれかに記載のバリア性蒸着フィルム、
(5)多層蒸着層が物理的気相蒸着法により形成した蒸着層及び化学的気相蒸着法により形成した蒸着層を含む上記(4)に記載のバリア性蒸着フィルム、
(7)更にバリア性蒸着フィルムの幅の3%を該フィルム幅両端から除いた部分において、該部分の幅を等間隔に10分割する9つの点について上記と同様にX線光電子分光法(ESCA)により蒸着層(a)を深さ方向に分析した際に、各点において、[酸素(O)/金属]の平均値が、1.20以上、1.90以下であり、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である上記(1)~(6)のいずれかに記載のバリア性蒸着フィルム、
(9)少なくともフィルム巻き出し・巻き取り槽と蒸着槽を有するロールツーロール方式の蒸着装置を用い、巻き出し・巻き取り槽内の圧力と蒸着槽内の圧力の比[(巻き出し・巻き取り槽内の圧力)/(蒸着槽内の圧力)]が50以下で蒸着層(a)を形成する上記(1)~(8)のいずれかに記載のバリア性蒸着フィルムの製造方法、
(10)[(巻き出し・巻き取り槽内の圧力)/(蒸着槽内の圧力)]が5以下である上記(9)に記載のバリア性蒸着フィルムの製造方法、
(11)蒸着槽内の圧力が2.5×10-2Pa以下である上記(9)または(10)に記載のバリア性蒸着フィルムの製造方法、
(12)蒸着装置がフィルム巻き出し・巻取り槽と蒸着槽との間に排気槽を更に有する上記(9)~(11)のいずれかに記載のバリア性蒸着フィルムの製造方法、及び
(13)蒸着層(a)を形成する際に酸素を蒸着槽に導入する上記(9)~(12)のいずれかに記載のバリア性蒸着フィルムの製造方法、
に関する。
<バリア性蒸着フィルム>
本発明のバリア性蒸着フィルムは、基材の少なくとも一方の面に下記の蒸着層(a)を少なくとも一層有することを特徴とするバリア性蒸着フィルムである。
蒸着層(a):金属酸化物よりなる厚さ10~500nm蒸着層であり、X線光電子分光法(ESCA)により該蒸着層を深さ方向に分析した際に、酸素(O)と金属の元素比[酸素(O)/金属]の平均値が1.20以上、1.90以下、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である
すなわち、蒸着層の酸素(O)と金属の元素比[酸素(O)/金属]の平均値を1.20以上、1.90以下とし、かつ[酸素(O)/金属]の値の最大値と最小値の差が0.35以下とすることで、蒸着層の基材側から表面側に至るまで、膜が緻密でバリア性が高くかつ安定した蒸着層を得ることができる。
なお、本発明において、酸素(O)と金属の元素比[酸素(O)/金属]を酸化数ということもある。
本発明のバリア性蒸着フィルムは、基材の少なくとも一方の面に蒸着層を有するが、基材としてはプラスチックフィルムが好ましく、特に透明熱可塑性高分子フィルムからなるものが好ましい。その原料としては、通常の包装材料に使用しうる樹脂であれば特に制限なく用いることができる。具体的には、エチレン、プロピレン、ブテン等の単独重合体または共重合体などのポリオレフィン、環状ポリオレフィン等の非晶質ポリオレフィン、ポリエチレンテレフタレート、ポリエチレン-2,6-ナフタレート等のポリエステル、ナイロン6、ナイロン66、ナイロン12、共重合ナイロン等のポリアミド、ポリビニルアルコール、エチレン-酢酸ビニル共重合体部分加水分解物(EVOH)、ポリイミド、ポリエーテルイミド、ポリサルホン、ポリエーテルサルホン、ポリエーテルエーテルケトン、ポリカーボネート、ポリビニルブチラール、ポリアリレート、フッ素樹脂、アクリレート樹脂、生分解性樹脂などが挙げられる。これらの中では、フィルム強度、コストなどの点から、ポリエステル、ポリアミド、ポリオレフィン、生分解性樹脂が好ましい。中でも、フィルム物性の点から、ポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)等のポリエステルが特に好ましい。
また、上記プラスチックフィルムは、公知の添加剤、例えば、帯電防止剤、光線遮断剤、紫外線吸収剤、可塑剤、滑剤、フィラー、着色剤、安定剤、潤滑剤、架橋剤、ブロッキング防止剤、酸化防止剤等を含有することができる。
上記基材上に設けられる蒸着層(a)は、厚さ10~500nmであり、かつ金属酸化物よりなり、後述にある様なX線光電子分光法(ESCA)により該蒸着層を深さ方向に分析した際に、酸素(O)と金属の元素比[酸素(O)/金属]の平均値が1.20以上、1.90以下であり、[酸素(O)/金属]の最大値と最小値の差が0.35以下であるものである。
[酸素(O)/金属]が前記の条件を満たすことにより、基材側から表面側に至るまで、均一かつ緻密でバリア性が高くかつ安定した蒸着層を得ることができる。
[酸素(O)/金属]の平均値は、バリア性の点で、1.20以上、1.70以下であることが好ましく、1.20以上、1.45以下であることがより好ましい。また、[酸素(O)/金属]の最大値と最小値の差は、バリア性の経時変化を少なくする為に、0.2以下であることがより好ましく、0.1以下であることが更に好ましく、特に0に近いほど好ましい。
上記金属としては、珪素、アルミニウム、マグネシウム、亜鉛、錫、ニッケル及びチタン等が挙げられるが、特に珪素(Si)が好ましい。
蒸着層(a)中には本発明の趣旨を逸脱しない範囲で窒素や炭素等の他の元素を含んでいてもよい。
本発明のバリア性蒸着フィルムは蒸着層(a)に加え、更に蒸着層を有していてもよい。
PVD層の厚さは、一般に0.1~500nmであるが、ガスバリア性、フィルムの生産性の点から、好ましくは5~100nm、より好ましくは10~100nm、特に好ましくは10~50nmである。
PVD層を構成する物質としては、珪素、アルミニウム、マグネシウム、亜鉛、錫、ニッケル、チタン、ダイヤモンドライクカーボン等、あるいはこれらの酸化物、炭化物、窒化物又はそれらの混合物が挙げられるが、バリア性蒸着フィルムを太陽電池等に使用した場合、電流がリークする等の恐れがない点から、酸化アルミニウム、酸化珪素、酸化窒化珪素及び酸化窒化炭化珪素等の金属酸化物、窒化珪素等の金属窒化物並びにダイヤモンドライクカーボンが好ましい。特に、酸化アルミニウム、酸化珪素、酸化窒化珪素、酸化窒化炭化珪素及び窒化珪素は、高いガスバリア性が安定に維持できる点で好ましい。これらは1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。またPVD層は、本発明の趣旨を逸脱しない範囲で他の元素を含んでいてもよい。
本発明においては、CVD層は、X線光電子分光法(ESCA)により測定された炭素含有量が20at.%未満であるのが好ましく、より好ましくは10at.%未満、特に好ましくは5at.%未満である。炭素含有量をこのような値とすることにより、CVD層の表面エネルギーが大きくなり、蒸着層同士の間の密着性を妨げることがなくなる。そのためバリアフィルムの耐折曲げ性、耐剥離性が向上する。
以上の点から、上記CVD層における炭素含有量は、好ましくは0.5at.%以上、20at.%未満、より好ましくは1at.%以上、10at.%未満、特に好ましくは2at.%以上、5at.%未満である。ここで、「at.%」とは、原子組成百分率(atomic %)を示す。
X線光電子分光法(ESCA)による炭素含有量の具体的な測定方法は後述の通りである。
CVD層の形成方法としては、製膜速度を高くして高生産性を実現することや、基材への熱的ダメージを回避する必要があることから、プラズマCVDが好ましく、量産性や製膜品質に優れる点でCat-CVDが好ましい。
プラズマCVD法により形成されたCVD層としては、有機化合物をプラズマ分解して得られる金属、金属酸化物、金属窒化物等から選ばれる少なくとも一種からなる層を挙げることができる。
図1及び図2の各々に本発明のバリア性蒸着フィルムを製造しうる蒸着装置の一例の概略図を示す。
図1において、本発明のバリア性蒸着フィルムを製造する蒸着装置1は、珪素酸化物等の蒸着原料を蒸発させる蒸発源2、ロール3、巻き出しロール4、巻き取りロール5、蒸着槽(A)及び巻き出し・巻き取り槽(B)を有している。蒸着装置1においては、基材を巻き出しロール4により巻き出しし、次に該基材上に蒸着槽(A)において珪素酸化物等を真空蒸着し、基材を巻き取りロール5により巻き取りながら、ロールツーロール方式により連続的に蒸着フィルムを製造する。
また、巨大排気装置を複数設置し、巻き出し・巻き取り槽(B)と蒸着槽(A)を含んだ装置全体を同じ圧力まで減圧を行う方法があるが、工業的に大型設備となるためコスト的にあまり現実的ではない。
上記[酸素(O)/金属]の平均値は、バリア性の点で、1.20以上、1.70以下であることが好ましく、1.20以上、1.45以下であることがより好ましい。また、[酸素(O)/金属]の最大値と最小値の差は、蒸着層の均一性を良くするためやバリア性の経時変化を少なくするために、0.2以下であることがより好ましく、0.1以下であることが更に好ましく、特に0に近いほど好ましい。
上記蒸着層(a)の成膜方法は、単独でもいくつか組み合わせて行ってもよい。
上記PVD層の形成は、緻密な蒸着層を形成するため、例えば減圧下で、好ましくは基材を搬送しながら行う。PVD層を形成する際の圧力は真空排気能力とバリア性の観点から、好ましくは1×10-7~1Pa、より好ましくは1×10-6~1×10-1Pa、更に好ましくは1×10-4~1×10-2Paである。上記範囲内であれば、十分なガスバリア性が得られ、また、PVD層に亀裂や剥離を発生させることなく、透明性にも優れている。
本発明においては、蒸着層(a)を有する多層蒸着層を形成する場合は、ガスバリア性、生産性の点から、各蒸着層の形成を真空下、連続して行うことが好ましい。すなわち、本発明においては、各蒸着層の形成終了後に、蒸着槽内の圧力を大気圧近傍にまで戻して、再度真空にして後工程を行うものではなく、真空状態のまま連続的に成膜を行うことが好ましい。また、同様に生産性の観点から、各蒸着層の形成はフィルムを搬送させながら行うことが好ましい。
本発明においては、前記基材と蒸着層との密着性向上のため、基材と蒸着層の間に、アンカーコート剤を塗布してアンカーコート層を設けることが好ましい。アンカーコート剤としては、生産性の点から、ポリエステル系樹脂、ウレタン系樹脂、アクリル系樹脂、ニトロセルロース系樹脂、シリコン系樹脂、ビニルアルコール系樹脂、ポリビニルアルコール系樹脂、エチレンビニルアルコール系樹脂、ビニル系変性樹脂、イソシアネート基含有樹脂、カルボジイミド系樹脂、アルコキシル基含有樹脂、エポキシ系樹脂、オキサゾリン基含有樹脂、変性スチレン系樹脂、変性シリコーン系樹脂、ポリパラキシリレン系樹脂等を単独であるいは2種以上組み合わせて使用することができる。
また、アンカーコート層は必要に応じ、シラン系カップリング剤、チタン系カップリング剤、アルキルチタネート、無機粒子、紫外線吸収剤、耐候安定剤等の安定剤、潤滑剤、ブロッキング防止剤、酸化防止剤等を含有することができる。
また、基材へのアンカーコート剤の塗布性、接着性を改良するため、アンカーコート剤の塗布前に基材に通常の化学処理、放電処理などの表面処理を施してもよい。
本発明のバリア性蒸着フィルムには、必要に応じ、保護層等のその他の層を設けることは任意である。
保護層は最上層に有することが好ましい。該保護層を形成する樹脂としては、溶剤性及び水性の樹脂をいずれも使用することができ、具体的には、ポリエステル系樹脂、ウレタン系樹脂系、アクリル系樹脂、ポリビニルアルコール系樹脂、エチレン・不飽和カルボン酸共重合樹脂、エチレンビニルアルコール系樹脂、ビニル変性樹脂、ニトロセルロース系樹脂、シリコーン系樹脂、イソシアネート系樹脂、エポキシ系樹脂、オキサゾリン基含有樹脂、変性スチレン系樹脂、変性シリコーン系樹脂等を単独であるいは2種以上組み併せて使用することができる。保護層を形成する樹脂としては、蒸着層のガスバリア性向上の点から特に上記水性樹脂が好ましい。更に水性樹脂として、ポリビニルアルコール系樹脂、エチレンビニルアルコール系樹脂、エチレン・不飽和カルボン酸共重合樹脂が好ましい。また、保護層には、バリア性、摩耗性、滑り性向上のため、シリカゾル、アルミナゾル、粒子状無機フィラー及び層状無機フィラーから選ばれる1種以上の無機粒子を配合してもよい。あるいは保護層を該無機粒子存在下で前記樹脂の原料を重合させて形成される無機粒子含有樹脂からなる層としてもよい。
通常の実施態様としては、上記蒸着層あるいは保護層の上にプラスチックフィルムを設けたバリア性積層フィルムが各種用途に使用される。上記プラスチックフィルムの厚さは、機械強度、可撓性、透明性等の点から、通常5~500μm、好ましくは10~200μmの範囲で用途に応じて選択される。また、フィルムの幅や長さは特に制限はなく、適宜用途に応じて選択することができる。例えば、蒸着層あるいは保護層の面上にヒートシールが可能なプラスチックフィルムを積層して使用することにより、ヒートシールが可能となり、種々の容器用に使用できる。ヒートシールが可能な樹脂としては、ポリエチレン樹脂、ポリプロピレン樹脂、エチレン-酢酸ビニル共重合体、アイオノマー樹脂、アクリル系樹脂、生分解性樹脂等の公知の樹脂が挙げられる。
本発明において[酸素(O)/金属]は、X線光電子分光法(ESCA)による測定に基づいて得られ、蒸着層における炭素(C)の含有割合が元素全体の3%以下である領域における値である。すなわち、これはX線光電子分光法(ESCA)による測定において、例えば、蒸着層の取り扱い等による蒸着層表面の汚染等または、基材等の影響により、炭素含有量が多くなったと考えられる部分を除いた領域における測定値を意味する。
蒸着層形成後の各バリア性蒸着フィルムについて、透湿度を次の手法で評価した。
透湿面積10.0cm×10.0cm角の各ガスバリア性積層フィルムを2枚用い、蒸着層面を外側となるよう吸湿剤として無水塩化カルシウム約20gを入れ四辺を封じた袋を作製し、その袋を温度40℃、相対湿度90%RHの恒湿装置に入れ、1日目の透湿度(g/m2・日)を下記式により算出した。更に透湿度が安定した14日目から72時間以上間隔で30日目まで質量測定し、14日目以降の経過時間と袋重量との回帰直線の傾きから透湿度(g/m2・日)を算出し、14日目の透湿度とした。
1日目の透湿度(g/m2・日)=(m/s・t)
m:試験開始から1日経過後の増加質量(g)
s:透湿面積(m2)
t:1日
X線光電子分光装置(サーモフィッシャーサイエンティフィック社製、K-Alpha)を使用して、バリア性蒸着フィルムについて、フィルムの幅方向の中心点において蒸着層深さ方向に測定を行った。結合エネルギーを測定し、Si2p、C1s、O1sに対応するピークの面積から換算する事によって、元素組成(at.%)を算出した。測定は、X線ガンはスポットサイズ400μm、カソードHT12000V、ビーム6mA、イオンガンはAr雰囲気、イオンエネルギー1000V、電子エネルギー120V、電子エミッション10mAの条件で実施した。
また、そのSiとOの元素組成から元素比O/Siを算出した。そして、二酸化珪素を同装置を使用して測定し、O/Si=2との比較係数を用いて、元素比O/Siの値を補正した。
蒸着層の膜厚の測定は蛍光X線を用いて行った。この方法は、原子にX線を照射すると、その原子特有の蛍光X線を放射する現象を利用した方法で、放射される蛍光X線強度を測定することにより原子の数(量)を知ることが出来る。具体的には、フィルム上に既知の2種の厚みの薄膜を形成し、それぞれについて放射される特定の蛍光X線強度を測定し、この情報より検量線を作成する。測定試料について同様に蛍光X線強度を測定し、検量線からその膜厚を求めた。
基材として、厚さ12μmの二軸延伸ポリエチレンテレフタレートフィルムを用い、そのコロナ処理面に、図1に示す真空蒸着装置(フィルム巻き出し・巻き取り槽の圧力:6.3×10-2Pa)を使用して2.0×10-2Paの真空下でSiOを加熱方式で蒸発させ、SiOxの蒸着層を形成した。得られたバリア性蒸着フィルムについて蛍光X線による膜厚測定及びX線光電子分光装置(ESCA)での深さ方向分析を行った。更に得られたバリア性蒸着フィルムの蒸着層面側に、ウレタン系接着剤(東洋モートン社製「AD900」と「CATRT85」とを10:1.5の割合で配合)を塗布、乾燥し、厚さ約3μmの接着樹脂層を形成し、この接着樹脂層上に、厚さ60μmの未延伸ポリプロピレンフィルム(東洋紡績(株)製「パイレンフィルム-CT P1146」)をラミネートし、積層フィルムを得た。得られた積層フィルムについて、透湿度の評価を行った。結果を表1に示す。
PVDによる蒸着条件を各々表1に示すようにした以外は、実施例1と同様にして、バリア性蒸着フィルムを得た。なお、実施例4においては、PVD層を2層形成した。また、実施例5についてはPVD層を形成後、その上に、同一真空蒸着装置において、圧力を大気圧に戻すことなく、HMDSN(ヘキサメチルジシラザン)と窒素およびArガスをモル比1:7:7の比率で導入し、0.4Paの真空下でプラズマとしCVD層(SiONC(酸化炭化窒化珪素))を形成し、その上にさらにPVD層を形成した。得られたバリア性蒸着フィルムについて、蛍光X線による膜厚測定及びX線光電子分光装置(ESCA)での深さ方向分析を行った。更に得られたバリア性蒸着フィルムを用い、実施例1と同様にして得られた積層フィルムについて、透湿度の評価を行った。結果を表1に示す。
基材として、厚さ12μmの二軸延伸ポリエチレンテレフタレートフィルムを用い、そのコロナ処理面に、図1に示す真空蒸着装置(フィルム巻き出し・巻き取り槽の圧力:5.8×10-2Pa)を使用して9.4×10-3Paの真空下でSiOを加熱方式で蒸発させ、さらに蒸着槽内に酸素ガスを導入し、SiOxの蒸着層を形成した。得られたバリア性蒸着フィルムについて蛍光X線による膜厚測定及びX線光電子分光装置(ESCA)での深さ方向分析を行った。更に得られたバリア性蒸着フィルムを用い、実施例1と同様にして得られた積層フィルムについて、透湿度の評価を行った。結果を表1に示す。
2:蒸発源
3:ロール
4:巻き出しロール
5:巻取りロール
6:排気口
(A):蒸着槽
(B):巻き出し・巻き取り槽
(C):排気槽
Claims (13)
- 基材の少なくとも一方の面に下記の蒸着層(a)を少なくとも一層有することを特徴とするバリア性蒸着フィルム。
蒸着層(a):金属酸化物よりなる厚さ10~500nmの蒸着層であり、X線光電子分光法(ESCA)により該蒸着層を深さ方向に分析した際に、酸素(O)と金属の元素比[酸素(O)/金属]の平均値が1.20以上、1.90以下、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である - 金属が珪素(Si)である請求項1に記載のバリア性蒸着フィルム。
- 蒸着層(a)が物理的気相蒸着法により形成した蒸着層である請求項1または2に記載のバリア性蒸着フィルム。
- 蒸着層(a)を含む多層蒸着層を有する請求項1~3のいずれかに記載のバリア性蒸着フィルム。
- 多層蒸着層が物理的気相蒸着法により形成した蒸着層及び化学的気相蒸着法により形成した蒸着層を含む請求項4に記載のバリア性蒸着フィルム。
- 物理的気相蒸着法により形成した蒸着層が、金属酸化物よりなる厚さ10~500nm蒸着層であり、X線光電子分光法(ESCA)により該蒸着層を深さ方向に分析した際に、酸素(O)と金属の元素比[酸素(O)/金属]の平均値が1.20以上、1.90以下、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である請求項5に記載のバリア性蒸着フィルム。
- 更にバリア性蒸着フィルムの幅の3%を該フィルム幅両端から除いた部分において、該部分の幅を等間隔に10分割する9つの点について上記と同様にX線光電子分光法(ESCA)により蒸着層(a)を深さ方向に分析した際に、各点において、[酸素(O)/金属]の平均値が、1.20以上、1.90以下であり、かつ[酸素(O)/金属]の最大値と最小値の差が0.35以下である請求項1~6のいずれかに記載のバリア性蒸着フィルム。
- 基材がプラスチックフィルムである請求項1~7のいずれかに記載のバリア性蒸着フィルム。
- 少なくともフィルム巻き出し・巻き取り槽と蒸着槽を有するロールツーロール方式の蒸着装置を用い、巻き出し・巻き取り槽内の圧力と蒸着槽内の圧力の比[(巻き出し・巻き取り槽内の圧力)/(蒸着槽内の圧力)]が50以下で蒸着層(a)を形成する請求項1~8のいずれかに記載のバリア性蒸着フィルムの製造方法。
- [(巻き出し・巻き取り槽内の圧力)/(蒸着槽内の圧力)]が5以下である請求項9に記載のバリア性蒸着フィルムの製造方法。
- 蒸着槽内の圧力が2.5×10-2Pa以下である請求項9または10に記載のバリア性蒸着フィルムの製造方法。
- 蒸着装置がフィルム巻き出し・巻取り槽と蒸着槽との間に排気槽を更に有する請求項9~11のいずれかに記載のバリア性蒸着フィルムの製造方法。
- 蒸着層(a)を形成する際に酸素を蒸着槽に導入する請求項9~12のいずれかに記載のバリア性蒸着フィルムの製造方法。
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- 2012-03-29 KR KR1020137025642A patent/KR101881622B1/ko active IP Right Grant
- 2012-03-29 US US14/008,321 patent/US9650191B2/en active Active
- 2012-03-29 WO PCT/JP2012/058438 patent/WO2012133687A1/ja active Application Filing
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160009876A1 (en) * | 2013-03-14 | 2016-01-14 | University Of Surrey | A thin film barrier coating for cfrp |
JP2016519621A (ja) * | 2013-03-14 | 2016-07-07 | ユニバーシティ オブ サリー | 炭素繊維強化プラスチック |
US10550232B2 (en) * | 2013-03-14 | 2020-02-04 | University Of Surrey | Thin film barrier coating for CFRP |
WO2022009608A1 (ja) * | 2020-07-09 | 2022-01-13 | 凸版印刷株式会社 | ガスバリア積層体及び包装袋 |
Also Published As
Publication number | Publication date |
---|---|
US20140030510A1 (en) | 2014-01-30 |
KR20140009427A (ko) | 2014-01-22 |
TW201245476A (en) | 2012-11-16 |
US9650191B2 (en) | 2017-05-16 |
EP2692521A4 (en) | 2014-12-03 |
CN103459138A (zh) | 2013-12-18 |
KR101881622B1 (ko) | 2018-07-24 |
JPWO2012133687A1 (ja) | 2014-07-28 |
EP2692521A1 (en) | 2014-02-05 |
TWI563104B (ja) | 2016-12-21 |
JP5889281B2 (ja) | 2016-03-22 |
CN103459138B (zh) | 2016-08-17 |
EP2692521B1 (en) | 2018-08-22 |
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