WO2012108704A3 - 무기물 박막 태양전지 제조 장치 및 이의 제어 방법 - Google Patents

무기물 박막 태양전지 제조 장치 및 이의 제어 방법 Download PDF

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Publication number
WO2012108704A3
WO2012108704A3 PCT/KR2012/000972 KR2012000972W WO2012108704A3 WO 2012108704 A3 WO2012108704 A3 WO 2012108704A3 KR 2012000972 W KR2012000972 W KR 2012000972W WO 2012108704 A3 WO2012108704 A3 WO 2012108704A3
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WIPO (PCT)
Prior art keywords
inorganic
manufacturing
film solar
solar cell
inorganic thin
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PCT/KR2012/000972
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English (en)
French (fr)
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WO2012108704A2 (ko
Inventor
박정재
김도연
이종건
이민욱
윤석구
Original Assignee
고려대학교 산학협력단
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Publication date
Priority claimed from KR1020110012063A external-priority patent/KR101217330B1/ko
Priority claimed from KR1020120005920A external-priority patent/KR101311107B1/ko
Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Priority to US13/984,954 priority Critical patent/US9401449B2/en
Priority to EP12744903.1A priority patent/EP2674990B1/en
Publication of WO2012108704A2 publication Critical patent/WO2012108704A2/ko
Publication of WO2012108704A3 publication Critical patent/WO2012108704A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C23C24/045—Impact or kinetic deposition of particles by trembling using impacting inert media
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)

Abstract

본 발명은, 챔버 내 장착되어 태양전지 기판이 배치되는 기판 스테이지; 상기 태양전지 기판 상에 태양전지층을 형성하기 위하여 상기 기판 스테이지로 무기물 파우더를 포함하는 무기물 파우더 에어로졸을 초음속 유동으로 토출하는 노즐과, 상기 노즐에 상기 무기물 파우더 에어로졸을 공급하는 무기물 파우더 공급부를 구비하는 무기물 파우더 공급 유니트;를 구비하는 무기물 박막 태양전지 제조 장치를 제공하고 롤투롤 유니트를 구비하는 무기물 박막 태양전지 제조 장치 및 이의 제조 방법을 제공한다.
PCT/KR2012/000972 2011-02-10 2012-02-09 무기물 박막 태양전지 제조 장치 및 이의 제어 방법 WO2012108704A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/984,954 US9401449B2 (en) 2011-02-10 2012-02-09 Apparatus for manufacturing an inorganic thin-film solar cell, and method for controlling same
EP12744903.1A EP2674990B1 (en) 2011-02-10 2012-02-09 Apparatus for manufacturing an inorganic thin-film solar cell, and method for controlling same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020110012063A KR101217330B1 (ko) 2011-02-10 2011-02-10 무기물 박막 태양전지 제조 장치
KR10-2011-0012063 2011-02-10
KR1020120005920A KR101311107B1 (ko) 2012-01-18 2012-01-18 무기물 박막 태양전지 제조 장치 및 이의 제어 방법
KR10-2012-0005920 2012-01-18

Publications (2)

Publication Number Publication Date
WO2012108704A2 WO2012108704A2 (ko) 2012-08-16
WO2012108704A3 true WO2012108704A3 (ko) 2012-11-29

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PCT/KR2012/000972 WO2012108704A2 (ko) 2011-02-10 2012-02-09 무기물 박막 태양전지 제조 장치 및 이의 제어 방법

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US (1) US9401449B2 (ko)
EP (1) EP2674990B1 (ko)
WO (1) WO2012108704A2 (ko)

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TWI562142B (en) * 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
CN103608484B (zh) * 2011-04-20 2016-06-22 Oled工厂有限责任公司 用于气相沉积应用的测量设备和方法
US9796045B2 (en) * 2013-12-19 2017-10-24 Sunpower Corporation Wafer alignment with restricted visual access
JP6396123B2 (ja) * 2014-08-29 2018-09-26 日東電工株式会社 粉体コーティング装置
JP7117790B2 (ja) * 2020-11-24 2022-08-15 豊実精工株式会社 成膜装置、および、成膜製品の製造方法
KR20230023215A (ko) * 2021-08-10 2023-02-17 이창훈 세라믹 코팅 시스템 및 방법

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Publication number Priority date Publication date Assignee Title
US6413794B1 (en) * 1999-08-30 2002-07-02 Canon Kabushiki Kaisha Method of forming photovoltaic element
JP2006334563A (ja) * 2005-06-06 2006-12-14 Toshiba Corp コーティング方法及びコーティング装置
KR20100120598A (ko) * 2009-05-06 2010-11-16 (주)태광테크 스퍼터링용 타겟 및 그 제조방법

Non-Patent Citations (1)

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Title
See also references of EP2674990A4 *

Also Published As

Publication number Publication date
WO2012108704A2 (ko) 2012-08-16
EP2674990B1 (en) 2017-12-06
EP2674990A4 (en) 2016-02-24
US9401449B2 (en) 2016-07-26
EP2674990A2 (en) 2013-12-18
US20140030825A1 (en) 2014-01-30

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