WO2012102574A3 - Method for preparing graphene, transparent electrode including same, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell which employ same - Google Patents

Method for preparing graphene, transparent electrode including same, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell which employ same Download PDF

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Publication number
WO2012102574A3
WO2012102574A3 PCT/KR2012/000635 KR2012000635W WO2012102574A3 WO 2012102574 A3 WO2012102574 A3 WO 2012102574A3 KR 2012000635 W KR2012000635 W KR 2012000635W WO 2012102574 A3 WO2012102574 A3 WO 2012102574A3
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WO
WIPO (PCT)
Prior art keywords
solar cell
metal foil
same
dye
battery
Prior art date
Application number
PCT/KR2012/000635
Other languages
French (fr)
Korean (ko)
Other versions
WO2012102574A2 (en
Inventor
권순용
김성엽
곽진성
Original Assignee
국립대학법인 울산과학기술대학교 산학협력단
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Publication date
Application filed by 국립대학법인 울산과학기술대학교 산학협력단 filed Critical 국립대학법인 울산과학기술대학교 산학협력단
Publication of WO2012102574A2 publication Critical patent/WO2012102574A2/en
Publication of WO2012102574A3 publication Critical patent/WO2012102574A3/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2022—Light-sensitive devices characterized by he counter electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The present invention relates to a method for preparing graphene, transparent electrode including the same, an active layer, and a display device, an electronic device, a photovoltaic device, a battery, a solar cell, and a dye-sensitized solar cell which employ the same. The method for preparing graphene comprises the following steps of: (a) preparing a target substrate and a metal foil; (b) increasing the size of metal foil grains by heat-treating the metal foil; (c) supplying the metal foil in which the size of the grains is increased to the target substrate; (d) supplying carbon fuel on the metal foil; (d) heating the supplied carbon fuel, the target substrate, and the metal foil; (e) diffusing carbon atoms generated through the pyrolysis of the heated carbon fuel into the metal foil; and (f) forming graphene on the target substrate by carbon atoms diffused into the metal foil.
PCT/KR2012/000635 2011-01-28 2012-01-27 Method for preparing graphene, transparent electrode including same, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell which employ same WO2012102574A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20110008921 2011-01-28
KR10-2011-0008921 2011-01-28
KR20110012348 2011-02-11
KR10-2011-0012348 2011-02-11

Publications (2)

Publication Number Publication Date
WO2012102574A2 WO2012102574A2 (en) 2012-08-02
WO2012102574A3 true WO2012102574A3 (en) 2012-10-11

Family

ID=46581305

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/000635 WO2012102574A2 (en) 2011-01-28 2012-01-27 Method for preparing graphene, transparent electrode including same, active layer, and display device, electronic device, photovoltaic device, battery, solar cell, and dye-sensitized solar cell which employ same

Country Status (2)

Country Link
KR (1) KR20120087844A (en)
WO (1) WO2012102574A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109888101A (en) * 2019-02-19 2019-06-14 江苏赛清科技有限公司 Carbon-based overlapping solar battery of one kind and preparation method thereof
CN113555695B (en) * 2021-07-14 2022-07-05 东南大学 Ku-waveband high-transparency flexible dynamic frequency modulation wave-absorbing surface structure and preparation method thereof
CN114890410B (en) * 2022-06-30 2023-12-29 常州二维碳素科技股份有限公司 Preparation method of high-yield high-quality graphene powder

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090028007A (en) * 2007-09-13 2009-03-18 삼성전자주식회사 Transparent electrode comprising graphene sheet, display and solar cell including the electrode
KR20090043418A (en) * 2007-10-29 2009-05-06 삼성전자주식회사 Graphene sheet and process for preparing the same
KR20090065206A (en) * 2007-12-17 2009-06-22 삼성전자주식회사 Single crystalline graphene sheet and process for preparing the same
KR20100111447A (en) * 2009-04-07 2010-10-15 삼성전자주식회사 Manufacturing method of graphene

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090028007A (en) * 2007-09-13 2009-03-18 삼성전자주식회사 Transparent electrode comprising graphene sheet, display and solar cell including the electrode
KR20090043418A (en) * 2007-10-29 2009-05-06 삼성전자주식회사 Graphene sheet and process for preparing the same
KR20090065206A (en) * 2007-12-17 2009-06-22 삼성전자주식회사 Single crystalline graphene sheet and process for preparing the same
KR20100111447A (en) * 2009-04-07 2010-10-15 삼성전자주식회사 Manufacturing method of graphene

Also Published As

Publication number Publication date
WO2012102574A2 (en) 2012-08-02
KR20120087844A (en) 2012-08-07

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