WO2012093180A1 - Composant électronique ou optoélectronique comprenant des couches organiques - Google Patents

Composant électronique ou optoélectronique comprenant des couches organiques Download PDF

Info

Publication number
WO2012093180A1
WO2012093180A1 PCT/EP2012/050269 EP2012050269W WO2012093180A1 WO 2012093180 A1 WO2012093180 A1 WO 2012093180A1 EP 2012050269 W EP2012050269 W EP 2012050269W WO 2012093180 A1 WO2012093180 A1 WO 2012093180A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
conductive
substrate
component according
electrode
Prior art date
Application number
PCT/EP2012/050269
Other languages
German (de)
English (en)
Inventor
Martin Pfeiffer
Christian Uhrich
Wolf-Michael Gnehr
Original Assignee
Heliatek Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliatek Gmbh filed Critical Heliatek Gmbh
Publication of WO2012093180A1 publication Critical patent/WO2012093180A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the substrate-near electrode is composed of a layer system consisting of a substrate-near layer of a non ⁇ conductive or only slightly conductive material, a
  • Metal layer and a layer of a conductive or semiconductive material are conductive or semiconductive material.
  • Organic solar cells consist of a sequence of thinner ones
  • Layers (which are typically each thick to ⁇ thick) of organic materials, which are preferably vapor-deposited in vacuo or spin-coated from a solution.
  • the Electrical contacting can be effected by metal layers, transparent conductive oxides (TCOs) and / or transparent conductive polymers (PEDOT-PSS, PANI).
  • a solar cell converts light energy into electrical energy.
  • photoactive as
  • organic-based devices over conventional inorganic-based devices (semiconductors such as silicon, gallium arsenide) is the sometimes extremely high optical absorption coefficients (up to 2x10 5 cnf 1 ), which allow efficient
  • Semiconductor materials are very inexpensive when produced in large quantities; the possibility of producing flexible large-area components on plastic films, and the almost unlimited possibilities of variation and the unlimited availability of organic chemistry.
  • the materials can be tailored to their particular task.
  • n or p denotes an n- or p-type doping, which leads to an increase in the density of free electrons or holes in the thermal equilibrium state. In this sense, such layers are primarily as transport layers too
  • i-layer designates an undoped layer (intrinsic layer).
  • One or more i-layer (s) may in this case consist of layers of a material as well as a mixture of two materials (so-called interpenetrating networks).
  • interpenetrating networks in the Unlike inorganic solar cells, however, the pairs of charge carriers in organic semiconductors are not free after absorption, but they form the mutual attraction due to the less pronounced attenuation of the mutual attraction
  • the photoactive interface can be used as an organic donor-acceptor interface [C.W. Tang, Appl. Phys. Lett. 48 (1986) 183] or an interface to an inorganic semiconductor [B. O'Regan, M. Grätzel, Nature 1991, 353, 737])].
  • the excitons pass through diffusion to a
  • Such an active interface where electrons and holes are separated from each other. This can lie between the p (n) layer and the i-layer or between two i-layers.
  • the electrons are now transported to the n-area and the holes to the p-area.
  • the transport layers are preferably transparent or largely transparent
  • Thin films certainly fulfill this criterion.
  • the task of absorbing light either takes on only one of the components or both.
  • Exzitonendiffusions are at least the order of magnitude of the typical penetration depth of the light, so that the
  • Optoelectronic components are based on the principle
  • OLEDs organic solar cells or photodetectors
  • Such DMD stacks consist of a thin conductive oxide, thereon a metal layer and a second thin conductive oxide layer.
  • the motivation for such DMD stacks was to create a semitransparent electrode by using thinner metal layers and to minimize the material consumption on partly expensive metal.
  • Such electrodes can each be the substrate-near electrode or the counter electrode further away from the substrate
  • Laser structuring for example, partially
  • the invention is based on the object to provide a substrate near electrode available on flexible
  • Substrates can be deposited and structuring without destruction of the flexible substrate allows.
  • the object is achieved by an organic electronic or optoelectronic component on a flexible substrate whose substrate-near electrode consists of a layer system of several layers or comprises this layer system, the layer system comprising at least a first substrate-near layer containing a non-conductive or only slightly conductive material, a subsequent second layer comprising a conductive material and a third layer comprising a conductive or semiconductive material.
  • the first substrate-near layer has a refractive index which is greater than the refractive index of the flexible substrate
  • the second conductive layer has a thickness of less than or equal to 20 nm
  • the third conductive or semiconductive layer has a specific one
  • the third conductive or semiconductive layer disposed on the second layer is non-metallic.
  • the second layer may be formed as a metal layer.
  • at least one of the first, second or third layers may consist of the abovementioned materials, ie: the first, substrate-near layer may be formed from a non-conductive or only slightly conductive material, the second layer from a conductive material , preferably formed of a metal, and the third layer of a conductive or
  • a flexible substrate is understood to be a substrate which ensures deformability as a result of external forces.
  • the resulting flexible organic electronic or optoelectronic components are suitable for arrangement on curved surfaces.
  • Organic electronic or optoelectronic components are to be understood as meaning components which have at least one organic layer in the layer system.
  • An organic electronic or optoelectronic device may be, among others, an organic light emitting diode (OLED), an organic solar cell (OSC), a field effect transistor (OFET) or photodetector. Particularly preferred is the application in organic solar cells.
  • the third conductive or semiconducting layer which is arranged on the second layer, has a maximum layer thickness of 20 nm.
  • the layer thickness of the first substrate near Layer selected so that the reflection of the incident or outgoing light in the desired spectral range is minimized.
  • the layer thickness of the first becomes
  • Substrate layer selected so that in the area of
  • Layer system can be carried out via Bragg equation, wherein this proportional to ⁇ / 4 or for optically thin absorber proportional K / 2 can be selected as the distance between the absorber system and electrode.
  • the first non-conductive or only weakly conductive substrate-near layer is amorphous in order to allow a bending of the layer sequence without the formation of cracks or fractures.
  • the first non-conductive or only slightly conductive substrate-near layer has a sheet resistance of greater than 1000 ohms / sq, but preferably greater than 10,000 ohms / sq.
  • Ohm / sq describes the sheet resistance measured on a square surface, whereby the size of the square surface is irrelevant.
  • the term ohms / sq represents a term commonly used in the art.
  • the layer sequence between the layer electrode according to the invention close to the substrate and the counter electrode of the component according to the invention begins with a transparent, conductive layer
  • This layer is preferably a p-doped or n-doped organic layer having an optical band gap greater than 2 eV.
  • the first nonconductive or only slightly conductive near subtrate layer has a higher melting point and a higher evaporation temperature than the third conductive or semiconductive layer disposed on the second layer.
  • the first non-conductive or only slightly conductive substrate-near layer is formed from or comprises an oxide or sulfide semiconductor.
  • the first non-conductive or only weakly conductive substrate-near layer is composed of a group consisting of ITO (indium tin oxide),
  • ZnO Al, FTO, SnO 2 , TiO 2 , ZnS, IGZO (Indium Gallium Zinc Oxide), S1O 2, or a combination thereof.
  • the first non-conductive or only weakly conductive substrate-near layer is preferably made of or comprises an amorphous oxide semiconductor such as ITO, IGZO or a combination thereof.
  • the third semiconductive or conductive layer is on the second layer
  • the third conductive or semiconductive conductive layer is selected from the group consisting of ITO, ZnO: Al, FTO, SnO 2 , TiO 2 , ZnS, IGZO, or a combination thereof, wherein the third semiconducting conductive layer (4) preferably made of an oxide semiconductor or sulfide semiconductor having a smaller one
  • Evaporation temperature and melting point as the material used in the substrate-near layer for example ZnS, M0O 3 , V 2 O 5 , or a combination thereof is formed.
  • the same materials can be used, wherein the conductivity can be adjusted by changing the composition of the material.
  • the second layer is made a metal selected from a group consisting of Al, Ag, Au, Cr, Cu, Ti or a combination of these metals.
  • the layer system furthermore comprises at least one first
  • Adhesion promoter layer which is disposed between the first non-conductive or only slightly conductive ⁇ close to the substrate layer and the second conductive layer.
  • Such a primer layer is particularly suitable
  • the layer system comprises a second
  • Adhesive layer which is arranged between the flexible substrate and the first non-conductive or weakly conductive substrate-near layer. This is advantageous, for example, if deposition of the first non-conductive or only weakly conductive substrate-near layer on the flexible substrate is only possible to a limited extent.
  • the second adhesion promoter layer comprises a material which is selected from a group consisting of Cr, Ti and ZnO or a combination thereof.
  • a material which is selected from a group consisting of Cr, Ti and ZnO or a combination thereof for example, it is also possible to use doped ZnO, as well as Cr and Ti as adhesion promoter layers.
  • the layer sequence according to the invention allows a
  • the first non-conductive or only slightly conductive substrate-near layer protects the substrate from destruction.
  • the layer electrode according to the invention offers the
  • Evaporation temperature of the first non-conductive or weakly conductive substrate near layer is significantly lower than from the third semiconductive or conductive layer, which is arranged on the second layer.
  • the laser cuts have a maximum width of 200 ⁇ , preferably 100 ⁇ .
  • the edge elevation is maintained at a maximum of 100 nm after the solution according to the invention.
  • Separation method such as i.a. about OVPD, CVD, PVD, sputtering, dip-coating, imprinting, ink-jet, sol-gel-process etc.
  • It is preferably an organic solar cell with pin, npin, pnip or nip single cell or tandem cell, particularly preferably using doped
  • I denotes a intrinsic layer which is undoped or lightly doped, p is a positively doped layer and n is a negatively doped layer.
  • Substrate electrode still present a p-doped layer so that it is a pnip or pni structure, wherein preferably the doping is selected so high that the direct pn contact has no blocking effect, but it to low-loss recombination, preferably comes through a tunneling process.
  • a p-doped layer may still be present in the component between the photoactive i-layer and the electrode located on the substrate, so that it is a pip or pi structure p-doped layer has a Fermi level position which is at most 0.4 eV, but preferably less than 0.3 eV below the electron transport level of the i-layer, so that it is less lossy
  • Electron extraction from the i-layer in this p-layer comes.
  • an n-layer system is still present between the p-doped layer and the counterelectrode, so that it is a nipn or ipn structure, wherein preferably the doping is selected to be so high that the direct pn contact has no blocking effect, but it comes to low-loss recombination, preferably through a tunneling process.
  • an n-layer system may be present in the component between the intrinsic, photoactive layer and the counterelectrode so that it can be present is a nin- or in-structure, where the
  • additional n-doped layer has a Fermi level position which is at most 0.4 eV, but preferably less than 0.3 eV above the hole transport level of the i-layer, so that there is loss-poor hole extraction from the i-layer in this n-layer.
  • the component contains an n-layer system and / or a p-layer system, so that it is a pnipn, pnin, pipn or p-i-n structure, which in all cases is characterized
  • Layer has a lower thermal work function than the side facing away from the substrate adjacent to the i-layer layer, so that photogenerated electrons are preferably transported away to the substrate when no external voltage is applied to the device.
  • these are designed as organic tandem solar cells or multiple solar cells. So it may be at the
  • this is a pnipnipn tandem cell
  • the layer sequence of the component according to the invention preferably starts with a doped charge carrier transport layer on the layer electrode according to the invention. In a further embodiment of the invention, this is
  • a tandem solar cell while a solar cell is referred to, which consists of a vertical stack of two series-connected solar cells.
  • a multiple solar cell while a solar cell is referred to, which consists of a vertical stack of several connected in series solar cells, with a maximum of 10 solar cells are connected in a stack.
  • a conversion contact pn or np is installed on the electrodes. Possible structures are for this purpose e.g. pnip, nipn or pnipn.
  • the n-material system contains one or more doped wide-gap layers.
  • the term wide-gap layers defines layers with an absorption maximum in the wavelength range ⁇ 450 nm.
  • the p-material system contains one or more doped wide-gap layers.
  • the organic materials are small molecules.
  • small molecules means monomers which evaporate and thus on the substrate
  • the organic materials are at least partially polymers, but at least one photoactive i-layer is formed from small molecules.
  • the photoactive layer system is composed of an acceptor and a
  • the acceptor material is a material selected from the group of fullerenes or fullerene derivatives (preferably C60 or C70) or a PTCDI derivative (perylene-3,4,9,10-bis (dicarboximide) derivative ).
  • the donor material is an oligomer, in particular an oligomer according to WO2006092134, DE102009021881.5, a porphyrin derivative, a pentacene derivative or a perylene derivative, such as DIP (di-indeno-perylene), DBP (Di benzo-perylene).
  • TPD derivative triphenylamine dimer
  • a spiro compound such as spiropyrane, spiroxazine, MeO-TPD
  • PV-TPD N, N-di 4-2, 2-diphenyl-ethen-1-yl-phenyl-N, N-di 4-methylphenyl-phenyl-benzidine
  • Material system fullerenes such as C60, C70; NTCDA (1, 4, 5, 8-naphthalenetetracarboxylic dianhydride), NTCDI (naphthalenetetracarboxylic diimide) or PTCDI (perylene-3,4,9,10-bis (dicarboximide)
  • NTCDA 1, 4, 5, 8-naphthalenetetracarboxylic dianhydride
  • NTCDI naphthalenetetracarboxylic diimide
  • PTCDI perylene-3,4,9,10-bis (dicarboximide
  • Material system a p-dopant, said p-dopant is selected from a group consisting of F4-TCNQ, or a p-dopant as in DE10338406, DE10347856, DE10357044, DE102004010954, DE102006053320, DE102006054524 and
  • the n-type material system contains an n-dopant, where this n-dopant is a TTF derivative (tetrathiafulvalene derivative) or DTT derivative (dithienothiophene), an n-dopant as described in DE10338406,
  • the device in a further disclosed embodiment, the device
  • the organic materials used have a low melting point, preferably ⁇ 100 ° C., in a semitransparent manner with a transmittance of 10-80%.
  • the organic materials used have a low content
  • Glass transition temperature preferably ⁇ 150 ° C, on.
  • the optical path of the incident light in the active system is increased by using light traps.
  • the light trap is implemented by periodically switching the component on
  • microstructured substrate is constructed and the homogeneous function of the device, ie a short-circuit free contact and homogeneous distribution of the electric field over the entire surface, by the use of a doped wide-gap layer is ensured.
  • Ultrathin components have on structured substrates an increased risk of forming local short circuits, so that ultimately endangering the functionality of the entire component by such obvious inhomogeneity. This short circuit risk is reduced by the use of the doped transport layers.
  • the light trap is realized in that the device is constructed on a periodically microstructured substrate and the homogeneous function of the device whose short-circuit ⁇ free contact and a homogeneous distribution of elekt ⁇ cal field over the entire surface by the use of a doped wide-gap layer is ensured. That the light layer, the absorber is passed through at least twice particular ⁇ It benefits in this case, which thereby can lead to improved efficiency of the solar cell to an increased light absorption and.
  • This can be ⁇ example as achieved in that the substrate pyramid-like structures on the surface having heights and widths in each case in the range from one to several hundred
  • Height and width can be equal or
  • Pyramids be constructed symmetrically or asymmetrically.
  • the light trap is realized in that a doped wide-gap layer has a smooth interface with the i-layer and a rough interface with the reflective contact.
  • interface can be defined by a periodic
  • Microstructuring can be achieved. Particularly advantageous is the rough interface when they diffuse the light
  • the light trap is implemented by periodically switching the component on
  • microstructured substrate is constructed and a doped wide-gap layer has a smooth interface with the i-layer and a rough interface to the reflective contact.
  • the invention is based on some
  • Fig. 1 shows the general structure of an inventive
  • Fig. 2 shows the general structure of an inventive
  • Substrate near layer electrode in Fig. 3 shows a further imple mentation form a
  • FIG. 4 shows the schematic representation of a structure of an exemplary photoactive component on a
  • FIG. 5 shows a SEM image of a laser-structured ITO layer
  • FIG. 6 shows a photograph in an optical microscope of a laser-structured layer electrode according to the invention.
  • Embodiment 1 is intended to describe the invention without being limited thereto. Embodiment 1
  • an electrode according to the invention is shown in more detail in FIG. It is on the substrate 1, which, for example, as a flexible Polymer film is designed such as a PET film, a first substrate near non-conductive or only weakly conductive layer 2, for example made of IGZO arranged. On top of this, a second layer 3, for example of Ag, is arranged. On this second layer 3, a third semiconductive or conductive layer 4, for example made of ZnS is arranged. On this third semiconductive or conductive layer 4 is a doped charge carrier transport layer 5 on the substrate 1, which, for example, as a flexible Polymer film is designed such as a PET film, a first substrate near non-conductive or only weakly conductive layer 2, for example made of IGZO arranged. On top of this, a second layer 3, for example of Ag, is arranged. On this second layer 3, a third semiconductive or conductive layer 4, for example made of ZnS is arranged. On this third semiconductive or conductive layer 4 is a doped charge carrier transport layer 5 on the
  • Embodiment 2
  • an electrode according to the invention is shown in Fig. 2, which on the
  • Substrate 1 such as a PET film is arranged.
  • the electrode according to the invention comprises a first
  • substrate-near non-conductive or only slightly conductive layer 2 for example of ZnO: Al
  • a second conductive layer 3 for example made of Au
  • a third semiconductive or conductive layer 4 for example, from V 2 O 5 .
  • Embodiment 3 In a further illustrated in Figure 3
  • Embodiment is on the substrate 1, for example a PET film, a first substrate near non-conductive or only weakly conductive layer 2, for example made of ITO, arranged.
  • the layer system furthermore comprises a second layer 3, for example made of Cu or Ag.
  • a first adhesion promoter layer 6 is arranged, which consists of Cr.
  • the layer thickness of the adhesion promoter layer is 5 nm.
  • the layer thickness of the Cu is 5nm.
  • Layer 3 is a third semiconductive or conductive layer 4, for example, ZnO: Al arranged.
  • Embodiment 4 is a third semiconductive or conductive layer 4, for example, ZnO: Al arranged.
  • a light trap is used in Figure 4 to extend the optical path of the incident light in the active system.
  • the light trap is realized by the fact that the
  • Component is built on a periodically microstructured substrate and the homogeneous function of the device, its short-circuit-free contacting and a homogeneous
  • the light passes through the absorber layer at least twice, which can lead to increased light absorption and thereby to improved efficiency of the solar cell. This can be achieved, for example, as in FIG. 2, in that the substrate has pyramid-like structures on the substrate
  • the pyramids can be constructed symmetrically or asymmetrically.
  • the width of the pyramidal structures is between ⁇ and 200 ⁇ .
  • pyramidal structures can be between ⁇ and 1mm. Designation of FIG. 4:
  • substrate 12 substrate-near electrode comprising a first
  • Substrate-near layer of a non-conductive or weakly conductive material followed by a second conductive layer of a metal and thereon a third layer of a conductive or
  • electrode e.g. ITO or metal (10 - 200nm)
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • a layer electrode according to the invention is compared by way of example with an electrode known from the prior art on the basis of the result after the laser structuring.
  • the ITO layer has a layer thickness of about 100 nm.
  • the ITO layer is arranged on a PET film as a substrate.
  • the conductivity of a 100 nm thick ITO layer is about 50 ohms / sq.
  • the trench edges have frequent elevations, that of a cell processed thereon
  • FIG. 6 shows a photograph of an optical microscope of a laser-structured substrate-near electrode according to the invention. This one has
  • the conductivity of this layer electrode is about 10 ohms / sq.
  • Embodiment 6 is a diagrammatic representation of Embodiment 6
  • this includes
  • Adhesive layer 7 is the first substrate near non ⁇ conductive or only slightly conductive layer 2, for example, ITO, arranged. On the first layer 2, a further adhesion promoter layer 6 is arranged, which the

Abstract

La présente invention concerne un composant électronique ou optoélectronique organique qui se trouve sur un substrat souple (1) comportant une électrode, une contre-électrode et un système de couches qui est situé entre l'électrode et la contre-électrode et qui comporte au moins une couche organique. L'électrode du composant qui est proche du substrat est composée d'une séquence de couches comprenant une première couche proche du substrat (2) qui est la plus faiblement conductrice possible, une deuxième couche conductrice (2) et une troisième couche semiconductrice ou conductrice (4).
PCT/EP2012/050269 2011-01-06 2012-01-09 Composant électronique ou optoélectronique comprenant des couches organiques WO2012093180A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/EP2011/050139 WO2012092972A1 (fr) 2011-01-06 2011-01-06 Composant électronique ou optoélectronique comprenant des couches organiques
EPPCT/EP2011/050139 2011-01-06

Publications (1)

Publication Number Publication Date
WO2012093180A1 true WO2012093180A1 (fr) 2012-07-12

Family

ID=45463622

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/EP2011/050139 WO2012092972A1 (fr) 2011-01-06 2011-01-06 Composant électronique ou optoélectronique comprenant des couches organiques
PCT/EP2012/050269 WO2012093180A1 (fr) 2011-01-06 2012-01-09 Composant électronique ou optoélectronique comprenant des couches organiques

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/EP2011/050139 WO2012092972A1 (fr) 2011-01-06 2011-01-06 Composant électronique ou optoélectronique comprenant des couches organiques

Country Status (1)

Country Link
WO (2) WO2012092972A1 (fr)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999036261A1 (fr) * 1998-01-20 1999-07-22 Polaroid Corporation Procede de formation d'electrodes
US6249082B1 (en) * 1998-01-13 2001-06-19 Toppan Printing Co., Ltd. Electrode plate having transparent type or reflective type multi-layered conductive film and method for manufacturing the same
DE102004014046A1 (de) 2003-03-19 2004-09-30 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10347856A1 (de) 2003-10-10 2005-06-02 Technische Universität Dresden Halbleiterdotierung
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
WO2006092134A1 (fr) 2005-03-04 2006-09-08 Heliatek Gmbh Composant photoactif organique
WO2006134093A1 (fr) 2005-06-16 2006-12-21 Siemens Aktiengesellschaft Electrode multicouche semi-transparente
DE102006053320A1 (de) 2006-11-13 2008-05-15 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
DE102006054524A1 (de) 2006-11-20 2008-05-29 Novaled Ag Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand
DE102008051737A1 (de) 2007-10-24 2009-05-07 Novaled Ag Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente
DE202007018948U1 (de) 2006-07-18 2009-12-31 University Of Southern California, Los Angeles Elektroden mit Nanoröhrchen für organische optoelektronische Einrichtung
WO2010094775A1 (fr) * 2009-02-19 2010-08-26 Agc Glass Europe Susbstrat transparent pour dispositifs photoniques
DE102009021881A1 (de) 2009-05-19 2010-11-25 Technische Universität Dresden Organisches halbleitendes Bauelement

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6249082B1 (en) * 1998-01-13 2001-06-19 Toppan Printing Co., Ltd. Electrode plate having transparent type or reflective type multi-layered conductive film and method for manufacturing the same
WO1999036261A1 (fr) * 1998-01-20 1999-07-22 Polaroid Corporation Procede de formation d'electrodes
DE102004014046A1 (de) 2003-03-19 2004-09-30 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10347856A1 (de) 2003-10-10 2005-06-02 Technische Universität Dresden Halbleiterdotierung
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
WO2006092134A1 (fr) 2005-03-04 2006-09-08 Heliatek Gmbh Composant photoactif organique
WO2006134093A1 (fr) 2005-06-16 2006-12-21 Siemens Aktiengesellschaft Electrode multicouche semi-transparente
DE202007018948U1 (de) 2006-07-18 2009-12-31 University Of Southern California, Los Angeles Elektroden mit Nanoröhrchen für organische optoelektronische Einrichtung
DE102006053320A1 (de) 2006-11-13 2008-05-15 Novaled Ag Verwendung einer Koordinationsverbindung zur Dotierung organischer Halbleiter
DE102006054524A1 (de) 2006-11-20 2008-05-29 Novaled Ag Verwendung von Dithiolenübergangsmetallkomplexen und Selen- analoger Verbindungen als Dotand
DE102008051737A1 (de) 2007-10-24 2009-05-07 Novaled Ag Quadratisch planare Übergangsmetallkomplexe und diese verwendende organische halbleitende Materialien sowie elektronische oder optoelektronische Bauelemente
WO2010094775A1 (fr) * 2009-02-19 2010-08-26 Agc Glass Europe Susbstrat transparent pour dispositifs photoniques
DE102009021881A1 (de) 2009-05-19 2010-11-25 Technische Universität Dresden Organisches halbleitendes Bauelement

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
B. O'REGAN; M. GRÄTZEL, NATURE, vol. 353, 1991, pages 737
C.W. TANG, APPL. PHYS. LETT., vol. 48, 1986, pages 183
JIANGENG XUE; SOICHI UCHIDA; BARRY P. RAND; STEPHEN R. FORREST, APPL. PHYS. LETT., vol. 85, 2004, pages 5757
MARTIN PFEIFFER: "Controlled doping of organic vacuum deposited dye layers: basics and applications", PHD THESIS TU-DRESDEN, 1999

Also Published As

Publication number Publication date
WO2012092972A1 (fr) 2012-07-12

Similar Documents

Publication Publication Date Title
EP2398056B1 (fr) Cellule solaire organique dotée de plusieurs systèmes de couches de transport
DE102004014046B4 (de) Photoaktives Bauelement mit organischen Schichten
EP2385556B1 (fr) Composant photo-actif doté de couches organiques
EP2438633B1 (fr) Composant photoactif à succession inverse de couches et son procédé de fabrication
EP2513995B1 (fr) Composant photoactif à couches organiques
EP2867932B1 (fr) Électrode transparente pour composants optoélectroniques
DE102013106639A1 (de) Organisches, halbleitendes Bauelement
EP2959520B1 (fr) Composant optoélectronique
DE102009038633B4 (de) Photoaktives Bauelement mit organischen Doppel- bzw. Mehrfachmischschichten
EP2859587B1 (fr) Systèmes de filtres pour des dispositifs photoactives
WO2014006566A1 (fr) Agencement d'électrodes pour des composants électro-optiques
WO2010139310A2 (fr) Cellule solaire ou photodétecteur organique inversé(e) ou transparent(e) à adsorption améliorée
EP2659529B2 (fr) Composant optoélectronique à couches dopées
DE102012105810B4 (de) Transparente Elektrode für optoelektronische Bauelemente
DE102012105809B4 (de) Organisches optoelektronisches Bauelement mit transparenter Gegenelektrode und transparenter Elektrodenvorrichtung
DE102008034256A1 (de) Photoaktives Bauelement mit organischen Schichten
WO2012093180A1 (fr) Composant électronique ou optoélectronique comprenant des couches organiques
WO2010012279A1 (fr) Composant photoactif organique, en particulier cellule solaire organique ou photodétecteur organique
WO2010133205A1 (fr) Cellule solaire organique ou photodétecteur à absorption améliorée
DE102012103448B4 (de) Verfahren zur Optimierung von in Reihe geschalteten, photoaktiven Bauelementen auf gekrümmten Oberflächen
DE102013101714A1 (de) Verfahren zur Optimierung von Absorberschichten in optoelektronischen Bauelementen

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12700070

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 12700070

Country of ref document: EP

Kind code of ref document: A1