WO2012083100A8 - Electroplated lead-free bump deposition - Google Patents
Electroplated lead-free bump deposition Download PDFInfo
- Publication number
- WO2012083100A8 WO2012083100A8 PCT/US2011/065324 US2011065324W WO2012083100A8 WO 2012083100 A8 WO2012083100 A8 WO 2012083100A8 US 2011065324 W US2011065324 W US 2011065324W WO 2012083100 A8 WO2012083100 A8 WO 2012083100A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electroplated lead
- deposition
- free bump
- bump deposition
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title abstract 2
- 238000000151 deposition Methods 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001316 Ag alloy Inorganic materials 0.000 abstract 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/1146—Plating
- H01L2224/11462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/11502—Pre-existing or pre-deposited material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/118—Post-treatment of the bump connector
- H01L2224/11848—Thermal treatments, e.g. annealing, controlled cooling
- H01L2224/11849—Reflowing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/119—Methods of manufacturing bump connectors involving a specific sequence of method steps
- H01L2224/11901—Methods of manufacturing bump connectors involving a specific sequence of method steps with repetition of the same manufacturing step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroplating Methods And Accessories (AREA)
- Wire Bonding (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020137016821A KR20130130000A (en) | 2010-12-17 | 2011-12-16 | Electroplated lead-free bump deposition |
CN2011800599578A CN103430287A (en) | 2010-12-17 | 2011-12-16 | Electroplated lead-free bump deposition |
JP2013544802A JP2013546205A (en) | 2010-12-17 | 2011-12-16 | Lead-free bump deposition by electroplating |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/971,744 | 2010-12-17 | ||
US12/971,744 US20120325671A2 (en) | 2010-12-17 | 2010-12-17 | Electroplated lead-free bump deposition |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2012083100A2 WO2012083100A2 (en) | 2012-06-21 |
WO2012083100A3 WO2012083100A3 (en) | 2013-04-25 |
WO2012083100A8 true WO2012083100A8 (en) | 2013-06-20 |
Family
ID=46232956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2011/065324 WO2012083100A2 (en) | 2010-12-17 | 2011-12-16 | Electroplated lead-free bump deposition |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120325671A2 (en) |
JP (1) | JP2013546205A (en) |
KR (1) | KR20130130000A (en) |
CN (1) | CN103430287A (en) |
TW (1) | TW201241242A (en) |
WO (1) | WO2012083100A2 (en) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
EP2405469B1 (en) * | 2010-07-05 | 2016-09-21 | ATOTECH Deutschland GmbH | Method to form solder alloy deposits on substrates |
JP5659821B2 (en) * | 2011-01-26 | 2015-01-28 | 三菱マテリアル株式会社 | Manufacturing method of Sn alloy bump |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
JP5827939B2 (en) | 2012-12-17 | 2015-12-02 | 東京エレクトロン株式会社 | Film forming method, program, computer storage medium, and film forming apparatus |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US9219174B2 (en) | 2013-01-11 | 2015-12-22 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
JP5871844B2 (en) * | 2013-03-06 | 2016-03-01 | 東京エレクトロン株式会社 | Substrate processing method, program, computer storage medium, and substrate processing system |
JP2014175357A (en) | 2013-03-06 | 2014-09-22 | Tokyo Electron Ltd | Substrate processing method, program, computer storage medium, and substrate processing system |
US8877630B1 (en) * | 2013-11-12 | 2014-11-04 | Chipmos Technologies Inc. | Semiconductor structure having a silver alloy bump body and manufacturing method thereof |
US9368340B2 (en) * | 2014-06-02 | 2016-06-14 | Lam Research Corporation | Metallization of the wafer edge for optimized electroplating performance on resistive substrates |
US9804498B2 (en) * | 2014-06-09 | 2017-10-31 | International Business Machines Corporation | Filtering lead from photoresist stripping solution |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
JP6557466B2 (en) * | 2014-12-24 | 2019-08-07 | ローム・アンド・ハース・エレクトロニック・マテリアルズ・コリア・リミテッド | Nickel plating solution |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US9576922B2 (en) | 2015-05-04 | 2017-02-21 | Globalfoundries Inc. | Silver alloying post-chip join |
US10049970B2 (en) | 2015-06-17 | 2018-08-14 | Samsung Electronics Co., Ltd. | Methods of manufacturing printed circuit board and semiconductor package |
US20170110392A1 (en) * | 2015-10-15 | 2017-04-20 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method for manufacturing the same structure |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9953908B2 (en) * | 2015-10-30 | 2018-04-24 | International Business Machines Corporation | Method for forming solder bumps using sacrificial layer |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2320278C (en) * | 1998-02-12 | 2006-01-03 | Acm Research, Inc. | Plating apparatus and method |
US6638847B1 (en) * | 2000-04-19 | 2003-10-28 | Advanced Interconnect Technology Ltd. | Method of forming lead-free bump interconnections |
US6596621B1 (en) * | 2002-05-17 | 2003-07-22 | International Business Machines Corporation | Method of forming a lead-free tin-silver-copper based solder alloy on an electronic substrate |
US7547623B2 (en) * | 2002-06-25 | 2009-06-16 | Unitive International Limited | Methods of forming lead free solder bumps |
US7012333B2 (en) * | 2002-12-26 | 2006-03-14 | Ebara Corporation | Lead free bump and method of forming the same |
US20080128019A1 (en) * | 2006-12-01 | 2008-06-05 | Applied Materials, Inc. | Method of metallizing a solar cell substrate |
US8314500B2 (en) * | 2006-12-28 | 2012-11-20 | Ultratech, Inc. | Interconnections for flip-chip using lead-free solders and having improved reaction barrier layers |
US7915741B2 (en) * | 2009-02-24 | 2011-03-29 | Unisem Advanced Technologies Sdn. Bhd. | Solder bump UBM structure |
-
2010
- 2010-12-17 US US12/971,744 patent/US20120325671A2/en not_active Abandoned
-
2011
- 2011-12-16 JP JP2013544802A patent/JP2013546205A/en not_active Withdrawn
- 2011-12-16 WO PCT/US2011/065324 patent/WO2012083100A2/en active Application Filing
- 2011-12-16 KR KR1020137016821A patent/KR20130130000A/en not_active Application Discontinuation
- 2011-12-16 CN CN2011800599578A patent/CN103430287A/en active Pending
- 2011-12-19 TW TW100147137A patent/TW201241242A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201241242A (en) | 2012-10-16 |
KR20130130000A (en) | 2013-11-29 |
WO2012083100A3 (en) | 2013-04-25 |
US20120325671A2 (en) | 2012-12-27 |
JP2013546205A (en) | 2013-12-26 |
CN103430287A (en) | 2013-12-04 |
WO2012083100A2 (en) | 2012-06-21 |
US20120152752A1 (en) | 2012-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2012083100A8 (en) | Electroplated lead-free bump deposition | |
WO2012109438A3 (en) | Seed layer passivation | |
WO2010104274A3 (en) | Lead frame and method for manufacturing the same | |
WO2013019409A3 (en) | Method of controlling the corrosion rate of alloy particles, alloy particle with controlled corrosion rate, and articles comprising the particle | |
EP2276063A3 (en) | Improvement of solder interconnect by addition of copper | |
WO2014022619A8 (en) | Dual solder layer for fluidic self assembly and electrical component substrate and method employing same | |
WO2011148242A8 (en) | Method of plating stainless steel and plated material | |
WO2012004710A3 (en) | Methods, devices, and materials for metallization | |
TW200714732A (en) | Metal duplex and method | |
EP1947215A3 (en) | Method for forming a displacement tin alloy plated film, displacement tin alloy plating bath and method for maintaining a plating performance | |
WO2009140238A3 (en) | Structure and method for reliable solder joints | |
WO2014086567A3 (en) | Method for manufacture of wire bondable and solderable surfaces on noble metal electrodes | |
WO2010074956A3 (en) | Doping of lead-free solder alloys and structures formed thereby | |
MY182935A (en) | Steel sheet for containers, and method for producing steel sheet for containers | |
MY139004A (en) | Lead frame for semiconductor device | |
WO2015138274A3 (en) | Electroplating of metals on conductive oxide substrates | |
WO2012148104A3 (en) | Silver coating pigment, and method for producing same | |
WO2013032956A3 (en) | Methods of fabricating semiconductor chip solder structures by reflowing a first and a second metallic layer and corresponding device | |
WO2014013463A3 (en) | Method of soldering an electronic component with a high lateral accuracy | |
WO2013037071A8 (en) | Zincating aluminum | |
WO2013153020A3 (en) | Method for preventing corrosion and component obtained by means of such | |
TW200802658A (en) | Manufacturing method of wiring substrate | |
PH12016500496B1 (en) | Method of selectively treating copper in the presence of further metal | |
EP2017373A3 (en) | High speed method for plating palladium and palladium alloys | |
WO2013025981A3 (en) | Selective plating of frame lid assembly |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11849888 Country of ref document: EP Kind code of ref document: A2 |
|
ENP | Entry into the national phase |
Ref document number: 2013544802 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20137016821 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11849888 Country of ref document: EP Kind code of ref document: A2 |