WO2012067246A1 - Proximity exposure device and proximity exposure method - Google Patents

Proximity exposure device and proximity exposure method Download PDF

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Publication number
WO2012067246A1
WO2012067246A1 PCT/JP2011/076719 JP2011076719W WO2012067246A1 WO 2012067246 A1 WO2012067246 A1 WO 2012067246A1 JP 2011076719 W JP2011076719 W JP 2011076719W WO 2012067246 A1 WO2012067246 A1 WO 2012067246A1
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WO
WIPO (PCT)
Prior art keywords
light
light source
mask
substrate
proximity exposure
Prior art date
Application number
PCT/JP2011/076719
Other languages
French (fr)
Japanese (ja)
Inventor
工 富樫
洋徳 川島
Original Assignee
Ｎｓｋテクノロジー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ｎｓｋテクノロジー株式会社 filed Critical Ｎｓｋテクノロジー株式会社
Priority to CN201180055791.2A priority Critical patent/CN103299243B/en
Priority to JP2012544332A priority patent/JPWO2012067246A1/en
Publication of WO2012067246A1 publication Critical patent/WO2012067246A1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers

Definitions

  • the present invention relates to a proximity exposure apparatus and a proximity exposure method, and more particularly to a proximity exposure apparatus and a proximity exposure method suitable for exposure transfer of a TFT array substrate and a color filter substrate of a liquid crystal display device.
  • the collimation half angle is 1 to 2 °.
  • the collimation half-angle is determined by the relationship between the size of the integrator lens and the distance from the integrator lens to the collimation mirror. Is adjusted to 1.3 to 1.7 °.
  • the shape of the integrator lens is made circular by partially hiding the lens element in order to suppress a decrease in resolution even if the exposure gap varies.
  • a pulsed laser emitted from an excimer laser is incident on a beam shaping lens, converted into a parallel laser, and incident on a fly-eye lens having a diameter of 1/10. It is described that the laser beam is emitted as a uniform laser and the collimation half angle is set to 0.5 ° or less by a collimation mirror.
  • the illumination light intensity is uniformized by a uniformizing means comprising a rod lens between the light source and the fly-eye lens, and the photomask is illuminated by the fly-eye lens. It is described that the light intensity distribution is made uniform, and the ultraviolet illumination light emitted from the light source by the collimating means is converted into parallel light and applied to the photomask.
  • Illumination light emitted from a mercury lamp or an ultrahigh pressure mercury lamp used as a light source unit includes g-line (435 nm) light, h-line (404 nm) light, i-line (365 nm) light, and j-line (313 nm) light is included, and exposure was conventionally performed using g-line light, h-line light, and i-line light.
  • j-line light is used. It is known that the use of light in the wavelength range is effective (see, for example, Patent Document 5).
  • the proximity exposure apparatus described in Patent Document 7 includes a lamp unit having at least two types of lamps having different internal pressures, and selectively turns on each type of lamp.
  • Japanese Unexamined Patent Publication No. 2007-240714 Japanese Unexamined Patent Publication No. 2007-94310 Japanese Unexamined Patent Publication No. 2008-158282 Japanese Unexamined Patent Publication No. 2005-265985 Japanese Unexamined Patent Publication No. 2009-182191 Japanese Unexamined Patent Publication No. 2006-184709 Japanese Unexamined Patent Publication No. 2008-191252 Japanese Unexamined Patent Publication No. 2008-242365
  • Patent Document 3 also describes that the collimation half angle is determined by the size and shape of the integrator lens.
  • the same problem as in Patent Document 2 exists.
  • the pattern to be transferred onto the substrate has a high resolution
  • each pattern has a desired line width
  • the collimation half angle is required to be variable so as to give the desired line width for each pattern. It is done.
  • Patent Documents 1 to 5 are configured so as to have a fixed small collimation half angle aiming at high resolution, and are not configured to easily change the collimation half angle.
  • Patent Document 5 has a problem that the light source is limited to the excimer laser, and other light sources cannot be used.
  • the exposure apparatus described in Patent Document 6 relates to a projection exposure apparatus, and does not disclose that a plurality of types of lamps are switched and used.
  • the proximity exposure apparatus described in Patent Document 7 also has a problem that it is difficult to control at the time of switching because the lamps are switched by selectively emitting a plurality of types of lamps.
  • only a plurality of shutters are described, and it does not relate to proximity exposure.
  • the present invention has been made in view of the above-described problems, and an object thereof is a proximity exposure apparatus and a proximity exposure method capable of obtaining a high-resolution pattern having a desired line width by variably setting a collimation half angle. Is to provide. Another object is to obtain a high-resolution pattern by using a light source unit that irradiates light of a short wavelength, and by using a light source unit that irradiates light of another wavelength, It is another object of the present invention to provide a proximity exposure apparatus and a proximity exposure method capable of switching each light source unit at an appropriate timing.
  • the above object of the present invention can be achieved by the following constitution. (1) a substrate holder for holding the substrate; A mask holding unit for holding a mask so as to face the substrate; An illumination optical system that emits light for pattern exposure toward the mask; In the state where the substrate and the mask are brought close to a predetermined gap, the substrate is irradiated with light from the illumination optical system through the mask, and the pattern of the mask is transferred to the substrate A proximity exposure apparatus,
  • the proximity exposure apparatus wherein the illumination optical system includes a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred onto the substrate.
  • the illumination optical system further includes: a light source unit; and an integrator configured by a fly-eye lens including a plurality of lens cells to equalize the intensity of light from the light source unit.
  • the collimation half-angle adjustment mechanism is provided on an incident surface side or an emission surface side of the integrator, and blocks light incident on one of the plurality of lens cells or light emitted from any of the plurality of lens cells.
  • the proximity exposure apparatus according to (1) which is a light intensity reducing member that reduces light.
  • the proximity exposure apparatus according to (2) wherein the light intensity reducing member has a plurality of neutral density filters that can move independently.
  • the plurality of neutral density filters include a plurality of types of neutral density filters, and can be shielded with a plurality of neutral density ratios equal to or greater than the type of neutral density filters.
  • Proximity exposure device (5)
  • the illumination optical system further includes a light source unit and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
  • the proximity exposure apparatus according to (1), wherein the collimation half-angle adjustment mechanism is a lens that is provided between the light source unit and the integrator and changes a diameter or an incident angle of light incident on the integrator. .
  • the illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
  • the illumination optical system further includes a light uniformizing optical component that is provided between the light source unit and the integrator and uniformizes the intensity of light from the light source unit (2).
  • the proximity exposure apparatus wherein the pattern of the mask has a line width different from a desired line width of the pattern exposed on the substrate.
  • the illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
  • the proximity exposure according to (1), wherein the collimation half-angle adjustment mechanism is a light shielding member that is provided on an exit surface side of the integrator and shields light emitted from any of the plurality of lens cells. apparatus.
  • the proximity exposure apparatus according to (9), wherein light from the light source unit is directly incident on the integrator.
  • the illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit. And a plurality of light shielding members capable of shielding light from the first and second light source units, (1) The illumination optical system can irradiate the light of the first and second light source units at different timings by controlling the opening timing of the plurality of light shielding members. Proximity exposure device.
  • the plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second light shielding member capable of shielding light from the second light source unit, (9)
  • Each of the first and second light source units includes a plurality of first and second light source units
  • the first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units
  • the second light shielding member is provided for each of the plurality of second light source units, and includes a plurality of second light shielding members capable of shielding light from the plurality of second light source units, respectively.
  • the apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
  • the proximity exposure apparatus according to (13), wherein the plurality of first and second light shielding members are attached to the cassette.
  • the plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second capable of shielding all light from the first and second light source units.
  • Each of the first and second light source units includes a plurality of first and second light source units,
  • the first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units, respectively.
  • the proximity exposure apparatus according to (15).
  • the apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
  • the proximity exposure apparatus according to (16), wherein the plurality of first light shielding members are attached to the cassette.
  • the illumination optical system is a proximity exposure method of a proximity exposure apparatus having a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred to the substrate, Adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate by the collimation half angle adjustment mechanism; Irradiating the substrate with light from the illumination optical system through the mask in a state where the substrate and the mask are close to a predetermined gap, and exposing and transferring the pattern of the mask to the substrate;
  • a proximity exposure method comprising: (19)
  • the illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of
  • the exposure transfer step the light from the first and second light source units is made different by controlling the opening timing of the plurality of light shielding members in a state where the substrate and the mask are brought close to a predetermined gap.
  • the proximity exposure method according to (18) wherein the substrate is irradiated with light through the mask at a timing, and the pattern of the mask is transferred to the substrate.
  • the illumination optical system has a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate,
  • the collimation half-angle adjustment mechanism adjusts to a predetermined collimation half-angle corresponding to the desired line width of the pattern transferred to the substrate, and masks the light from the illumination optical system with the substrate and mask close to a predetermined gap. And irradiating the substrate through the mask, and transferring the mask pattern onto the substrate.
  • the collimation half angle can be set variably, and a high-resolution pattern having a desired line width can be obtained.
  • the illumination optical system includes a first light source unit that emits light having a peak wavelength at a short wavelength of 350 nm or less, the first light source unit,
  • the illumination optical system includes a second light source unit that emits light having different characteristics and a plurality of light shielding members capable of shielding light from the first and second light source units.
  • FIG. 4 It is a partial exploded perspective view for demonstrating the division
  • (A) is a front view which shows the modification of the mask holder of FIG. 20, (b) is the top view, (c) is the side view. It is a schematic diagram of the illumination optical system which concerns on the modification of 7th Embodiment of this invention.
  • (A) is the front view which shows the mask holder of FIG. 23, (b) is the top view, (c) is the side view. It is a graph which shows the light intensity distribution in the exposure surface at the time of exposing using the mask which has a general mask pattern, and an ideal light intensity distribution.
  • the divided sequential proximity exposure apparatus PE of one embodiment holds a mask stage 10 that holds a mask M and a glass substrate (hereinafter also simply referred to as “substrate W”) W.
  • a substrate stage 20 and an illumination optical system 70 (see FIG. 4) for irradiating light for pattern exposure are provided.
  • the substrate W is disposed so as to face the mask M, and a resist is coated on the surface (opposite surface side of the mask M) in order to expose and transfer the mask pattern drawn on the mask M.
  • the mask stage 10 is a mask stage base 11 in which a rectangular opening 11a is formed at the center, and a mask holding part that is mounted on the opening 11a of the mask stage base 11 so as to be movable in the X axis, Y axis, and ⁇ directions.
  • a mask holding frame 12 and a mask driving mechanism 16 that is provided on the upper surface of the mask stage base 11 and adjusts the position of the mask M by moving the mask holding frame 12 in the X axis, Y axis, and ⁇ directions. .
  • the mask stage base 11 is supported by a column 51 standing on the apparatus base 50 and a Z-axis moving device 52 provided at the upper end of the column 51 so as to be movable in the Z-axis direction (see FIG. 2). It is arranged above the stage 20.
  • a plurality of planar bearings 13 are arranged on the upper surface of the peripheral edge of the opening 11a of the mask stage base 11, and the mask holding frame 12 has a flange 12a provided at the outer peripheral edge of the upper end. It is mounted on the flat bearing 13. As a result, the mask holding frame 12 is inserted into the opening 11a of the mask stage base 11 through a predetermined gap, so that the mask holding frame 12 can move in the X axis, Y axis, and ⁇ directions by the gap.
  • a chuck portion 14 for holding the mask M is fixed to the lower surface of the mask holding frame 12 via a spacer 15.
  • the chuck portion 14 is provided with a plurality of suction nozzles 14a for sucking the peripheral portion of the mask M on which the mask pattern is not drawn, and the mask M is not shown in the drawing through the suction nozzle 14a. It is detachably held on the chuck portion 14 by the apparatus.
  • the chuck portion 14 can move in the X axis, Y axis, and ⁇ directions with respect to the mask stage base 11 together with the mask holding frame 12.
  • the mask driving mechanism 16 includes two Y-axis direction driving devices 16y attached to one side along the X-axis direction of the mask holding frame 12, and one X-axis attached to one side along the Y-axis direction of the mask holding frame 12.
  • Direction drive device 16x is attached to one side along the X-axis direction of the mask holding frame 12.
  • the Y-axis direction driving device 16y is installed on the mask stage base 11, and has a driving actuator (for example, an electric actuator) 16a having a rod 16b that expands and contracts in the Y-axis direction, and a pin support mechanism 16c at the tip of the rod 16b. And a guide rail 16e attached to a side portion of the mask holding frame 12 along the X-axis direction and movably attached to the slider 16d.
  • the X-axis direction drive device 16x has the same configuration as the Y-axis direction drive device 16y.
  • the mask holding frame 12 is moved in the X-axis direction by driving one X-axis direction drive device 16x, and the two Y-axis direction drive devices 16y are driven equally.
  • the mask holding frame 12 is moved in the Y axis direction.
  • the mask holding frame 12 is moved in the ⁇ direction (rotated about the Z axis) by driving one of the two Y-axis direction driving devices 16y.
  • a gap sensor 17 for measuring a gap between the opposing surfaces of the mask M and the substrate W, and a mounting position of the mask M held by the chuck portion 14.
  • an alignment camera 18 for confirming the above.
  • the gap sensor 17 and the alignment camera 18 are held so as to be movable in the X-axis and Y-axis directions via the moving mechanism 19 and are arranged in the mask holding frame 12.
  • aperture blades 38 are provided at both ends in the X-axis direction of the opening 11a of the mask stage base 11 to shield both ends of the mask M as necessary. It is done.
  • the aperture blade 38 is movable in the X-axis direction by an aperture blade drive mechanism 39 including a motor, a ball screw, a linear guide, and the like, and adjusts the shielding area at both ends of the mask M.
  • the aperture blades 38 are provided not only at both ends of the opening 11a in the X-axis direction but also at both ends of the opening 11a in the Y-axis direction.
  • the substrate stage 20 includes a substrate holding unit 21 that holds the substrate W, and a substrate that moves the substrate holding unit 21 in the X-axis, Y-axis, and Z-axis directions with respect to the apparatus base 50.
  • Drive mechanism 22 The substrate holding unit 21 detachably holds the substrate W by a vacuum suction mechanism (not shown).
  • the substrate drive mechanism 22 includes a Y-axis table 23, a Y-axis feed mechanism 24, an X-axis table 25, an X-axis feed mechanism 26, and a Z-tilt adjustment mechanism 27 below the substrate holder 21.
  • the Y-axis feed mechanism 24 includes a linear guide 28 and a feed drive mechanism 29, and a slider 30 attached to the back surface of the Y-axis table 23 extends 2 on the apparatus base 50.
  • the Y-axis table 23 is driven along the guide rail 31 by a motor 32 and a ball screw device 33 while straddling the guide rail 31 through a rolling element (not shown).
  • the X-axis feed mechanism 26 has the same configuration as the Y-axis feed mechanism 24, and drives the X-axis table 25 in the X direction with respect to the Y-axis table 23.
  • the Z-tilt adjustment mechanism 27 has one movable wedge mechanism, which is a combination of the wedge-shaped moving bodies 34 and 35 and the feed drive mechanism 36, arranged at one end in the X direction and two at the other end. Consists of.
  • the feed drive mechanisms 29 and 36 may be a combination of a motor and a ball screw device, or may be a linear motor having a stator and a mover. Further, the number of Z-tilt adjustment mechanisms 27 installed is arbitrary.
  • the substrate driving mechanism 22 feeds and drives the substrate holding unit 21 in the X direction and the Y direction, and moves the substrate holding unit 21 to Z so as to finely adjust the gap between the opposing surfaces of the mask M and the substrate W. Fine movement and tilt adjustment in the axial direction.
  • Bar mirrors 61 and 62 are respectively attached to the X-direction side and Y-direction side of the substrate holding unit 21, and a total of three laser interferometers are installed at the Y-direction end and the X-direction end of the apparatus base 50. 63, 64, 65 are provided. As a result, the laser beams are irradiated from the laser interferometers 63, 64, 65 to the bar mirrors 61, 62, the laser beams reflected by the bar mirrors 61, 62 are received, and the laser beams and the laser beams reflected by the bar mirrors 61, 62 are received. The position of the substrate stage 20 is detected by measuring interference with light.
  • the illumination optical system 70 includes a light source unit 73 including an ultra-high pressure mercury lamp 71 as a light emitting unit, and a reflecting mirror 72 that emits light generated from the lamp 71 with directivity. And an integrator 74 that is made up of a fly-eye lens composed of a plurality of lens cells and that uniformizes the intensity of light from the light source unit 73, and a plane mirror 75 that changes the direction of the optical path emitted from the exit surface of the integrator 74. A collimation mirror 76, and an exposure control shutter 77 that is disposed between the light source unit 73 and the integrator 74 and controls opening and closing so as to transmit and block the irradiated light.
  • the lamp 71 is not limited to a single lamp, and may be a combination of a plurality of lamps.
  • the light source unit 73 is not limited to the lamp 71 and may be laser light.
  • the illumination optical system 70 of the present embodiment is provided on the incident surface side of the integrator 74 as a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate W.
  • a light blocking member 78 that is a light intensity reducing member that blocks light incident on any of the plurality of lens cells so as to be set to a predetermined collimation half angle.
  • another integrator 79 as a light uniformizing optical component that uniformizes the intensity of light from the light source unit 73.
  • the collimation half angle is determined by the diameter of the integrator and the collimation mirror 76 (or collimation lens), but the light shielding member 78 is provided so that the emitted light from the integrator 74 does not diffuse and the emitted light becomes closer to parallel light. .
  • the light shielding member 78 is configured to be movable so as to shield a portion of the lens cell that contributes to light having a large angle within the collimation half angle and to give a predetermined collimation half angle.
  • the collimation half angle is preferably set between 0.1 and 2.0 °. When the collimation half angle is less than 0.1 °, the transfer pattern is distorted.
  • the collimation half angle is greater than 2.0 °
  • the amount of blur of the transfer pattern increases.
  • the light blocking member 78 if the light is blocked by the light blocking member 78, the illuminance uniformity deteriorates. In this case, the uniformity is improved by employing the integrator 74 having a large number of divisions.
  • the light shielding member 78 may be a metal such as iron, aluminum, tungsten, tantalum, tantalum is preferable in consideration of heat resistance, and light aluminum is preferable in consideration of mobility. Further, the light shielding member 78 may shield the outer portion of the lens cell so that the light from the light source unit 73 enters the integrator 74 in a circular shape, or the lens so that the light is incident in a square shape. The outer portion of the cell may be shielded from light.
  • the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other.
  • the gap between them is adjusted to a gap of about 100 to 300 ⁇ m, for example, and is arranged close to each other.
  • light for exposure from the light source unit 73 is incident on another integrator 79, and further collected by an integrator 74 that is partially shielded by moving a light shielding member 78, and is collected by a plane mirror 75 and a collimation mirror 76.
  • the light is reflected to be a plane light having a predetermined collimation angle and enters the mask M.
  • the exposure light transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is exposed and transferred to the substrate W.
  • a predetermined collimation half angle can be given by partially blocking the light incident on the integrator 74 by the movement of the light blocking member 78, so that a desired pattern to be transferred to the substrate W to be exposed can be obtained.
  • the collimation half angle can be variably set according to the line width, and a high-resolution pattern having a desired line width can be obtained.
  • the integrators 74 and 79 can make the light intensity uniform by subdividing. Therefore, the integrators 74 and 79 can select different division numbers in consideration of the illuminance distribution.
  • the light intensity reducing member may be a neutral density filter that attenuates light incident on any of the plurality of lens cells instead of the light shielding member 78.
  • the light blocking member 78 and the neutral density filter are provided on the incident surface side of the integrator 74, but are provided on the output surface side of the integrator 74 so that the collimation half angle of the light for pattern exposure is 0.1 to 2.0.
  • the light emitted from any one of the plurality of lens cells may be blocked or dimmed so that the light intensity is highest in the vicinity of the incident angle of 0 °.
  • the light homogenizing optical component it is preferable to use another integrator 79 because it is possible to obtain parallel light even when a plurality of light source units are provided.
  • a kaleidoscope composed of a rod integrator or mirror that is an internal reflection type optical element, a diffusion plate, or the like may also be used.
  • the positional relationship between the integrator 74 and the other integrator 79 is arbitrary.
  • the other integrator 79 may be arranged on the downstream side of the integrator 74, or at least one of the integrator 74 and the other integrator 79 is Further, it may be arranged upstream of the exposure control shutter 77.
  • the proximity exposure apparatus has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
  • the proximity exposure apparatus and the proximity exposure according to the first embodiment are used in that a plurality of neutral density filters 78a and 78b are used as the light intensity reducing member that is a collimation half angle adjustment mechanism. Different from the method.
  • the illumination optical system 70a includes a movable first neutral density filter 78a having a first attenuation ratio and a movable second density having a second attenuation ratio as a light intensity reducing member. And a neutral density filter 78b.
  • the lens cell portion of the integrator 74 that contributes to light with a large angle within the collimation half angle is dimmed by moving at least one of the first neutral density filter 78a and the second neutral density filter 78b.
  • the light intensity can be variably set so that the vicinity of the incident angle of 0 ° is the highest, and a high-resolution pattern having a desired line width can be obtained.
  • the light is attenuated alone or jointly to reduce
  • the light incident on the lens cell can be dimmed with two dimming rates.
  • the sum of the first attenuation rate of the first attenuation filter 78a and the second attenuation rate of the second attenuation filter 78b is 100% or more, the two attenuation filters 78a and 78b You may make it light-shield the part of a lens cell using both.
  • the light intensity reducing member only needs to have a plurality of neutral density filters that can move independently of each other, and is not limited to two as in the present embodiment, and may be three or more. Good. Therefore, a plurality of neutral density filters are constituted by a plurality of types of neutral density filters and selectively used, so that light can be shielded with a plurality of neutral density ratios that are equal to or greater than the types of neutral density filters.
  • first and second light shielding members 78a and 78b are provided on the exit surface side of the integrator 74, and light uniformizing optics.
  • the structure which does not provide components may be sufficient.
  • the integrator 74 is provided between the light source unit 73 and the integrator 74.
  • a lens 80 that is movable in the vertical direction with respect to the incident surface is provided.
  • the lens 80 of the present embodiment can be applied in combination with the light intensity reducing member of the first embodiment or the light intensity reducing member of the second embodiment, or the light intensity reducing member of the first embodiment. It is also possible to apply in combination with both the light intensity reducing member of the second embodiment.
  • the lens 80 is moved to change the incident light diameter or the incident angle to the integrator 74 to weaken the intensity of light outside the collimation half angle of the light for pattern exposure.
  • a high-resolution pattern with a desired line width can be obtained by setting the light intensity to be highest in the vicinity of an incident angle of 0 ° between ⁇ 2.0 °.
  • the lens 80 is disposed between the light source unit 73 and another integrator 79 that is a light uniformizing optical component, but a modification of the present embodiment shown in FIG. 10.
  • the lens 80 may be arranged between the light source unit 73 and the integrator 74 without providing the light uniformizing optical component as in the proximity exposure apparatus according to the above.
  • the light source unit 73 can be moved in the vertical direction with respect to the incident surface of the integrator 74 as a collimation half-angle adjustment mechanism instead of providing the above-described light intensity reducing member and lens. Provided.
  • the light source unit 73 is moved to change the incident light diameter to the integrator 74, thereby reducing the intensity of light outside the collimation half angle of the light for pattern exposure.
  • a high-resolution pattern with a desired line width can be obtained by making the light intensity the highest in the vicinity of an incident angle of 0 ° between 0.0 °.
  • the proximity exposure apparatus may have a configuration in which the light uniformizing optical component is not provided.
  • the illumination optical system 70d of the present embodiment includes a plurality of bandpass filters 90a and 90b that respectively transmit different wavelengths ⁇ [nm].
  • the filter switching mechanism 91 provided is further provided.
  • the mask M used in the present embodiment is made of a translucent substrate, and as shown in FIG. 14, a main pattern portion (light transmission portion) 81 having a line-shaped main opening, and a main pattern portion 81.
  • the phase shift mask includes a side-transparent line-shaped auxiliary pattern portion (light transmission portion) 83, and the main pattern portion 81 and the auxiliary pattern portion 83 are partitioned by a phase shift film 84.
  • the outer portion of the auxiliary pattern portion 83 is a light shielding film (chrome film) 82 that shields light.
  • the auxiliary pattern portion 83 is an opening that is not resolved after the development processing, and is arranged symmetrically on both sides with respect to the center O of the main pattern portion 81.
  • a plurality of auxiliary pattern portions 83 may be arranged symmetrically on both sides with respect to the center O of the main pattern portion 81.
  • the phase shift film 84 can improve the resolution that has deteriorated due to light interference by shifting the phase of the light passing therethrough by 180 °.
  • the phase difference of 180 ° is given by giving it by -1).
  • the phase shift film 84 can also change the degree of interference according to the phase shift amount. Further, the degree of interference can be changed even if the amount of transmission through the phase shift film 84 is changed.
  • the line width A of the main pattern portion 81 is 15 ⁇ m or less, and is set wider than the line width of the pattern that is exposed and transferred onto the surface of the substrate W.
  • the width B of the phase shift film 84 is set to 2/3 or less of the line width A of the main pattern portion 81
  • the line width C of the auxiliary pattern portion 83 is set to 2/3 or less of the width B of the phase shift film. Is set.
  • the line widths A and C of the main pattern portion 81 and the auxiliary pattern portion 83 of the mask pattern P and the width B of the phase shift film 84 are obtained by calculating the intensity of light irradiated to the substrate W and obtained by each mask pattern.
  • the intensity distribution in the line width direction to be obtained is calculated by simulation, and is determined by whether the line width of the pattern on the substrate obtained after the development processing or the contrast necessary for fine line resolution is obtained.
  • the mask M having the phase shift film 84 has a predetermined wavelength ⁇ of light to be transmitted in relation to the film thickness d in order to improve the resolution due to the phase shift.
  • the band-pass filters 90a and 90b that transmit the wavelength ⁇ according to the photosensitive characteristics of the substrate W are selected from the plurality of band-pass filters 90a and 90b that can be switched. Then, light having a wavelength transmitted through the bandpass filters 90a and 90b is irradiated through the mask M, and a line-shaped pattern 85 is formed on the surface of the substrate W facing the main pattern portion 81 by the mask pattern of the mask M. .
  • the mask M on which the mask pattern P is not formed is attracted and held by the chuck portion 14, the mask M is bent by its own weight, and the opposing surface of the mask M and the substrate W The gap g between them tends to be small near the center of the mask M, and tends to be large at the periphery, and the intensity distribution obtained by changing the gap g at each position of the mask M is different.
  • the exposure amount (energy amount) necessary for the resist to form a pattern after the development processing is such that the line width of the pattern formed on the substrate at each position in the exposure region where the gap g is different is substantially constant.
  • the amount of energy is preferably a line width of a pattern formed on the substrate W in consideration of the sensitivity of the resist applied to the substrate W and the gap g between the opposing surfaces of the substrate W and the mask M. It is determined to be the width of.
  • the mask pattern P of the mask M is not limited to the shape described above, and the main pattern portion includes two main openings parallel to each other via the phase shift film or the light shielding film, and the auxiliary pattern portion is You may arrange
  • the main pattern portion 81 includes two main openings 81 a and 81 a that are parallel to each other via the phase shift film 84, and the auxiliary pattern portion 83 is 2 through the phase shift film 84.
  • the main openings 81a and 81a are arranged outside the book.
  • the auxiliary pattern portion 83 is arranged symmetrically with respect to the center O between the two main openings 81a and 81a.
  • the mask of the present embodiment is configured to have a phase shift film, but is not limited to this.
  • the mask pattern P has a main pattern portion 81 and an auxiliary pattern portion 83 separated by a light shielding film 82 without using a phase shift film, as shown in FIG. It may be a configuration.
  • the mask of a pattern having a line width different from the desired line width of the pattern transferred to the substrate W as in the present embodiment is used in combination with the illumination optical system 70d provided with the collimation half-angle adjustment mechanism.
  • a resolution pattern can be formed.
  • the mask of the present embodiment can also be applied to the collimation half-angle adjustment mechanism of the second to fourth embodiments.
  • the proximity exposure apparatus has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
  • the illumination optical system 70e includes ultrahigh pressure mercury lamps 71a and 71b as light emitting units and reflections emitted with directivity to the light generated from these lamps 71a and 71b.
  • An integrator configured by mirrors 72a and 72b, first and second light source units 73a and 73b including the mirrors 72a and 72b, and a fly-eye lens including a plurality of lens cells, and uniformizing the intensity of light from the light source units 73a and 73b 74, a plane mirror 75 that changes the direction of the light path emitted from the exit surface of the integrator 74, a collimation mirror 76, and the first and second light source units 73a and 73b, respectively, are arranged in front of each other, Mechanical first and second light shielding members (a plurality of light shielding members) 177 and 178 that are controlled to open and close so as to pass and block.
  • the first light source unit 73a emits light having a peak wavelength at 350 nm or less, specifically, a short wavelength of j-line (313 nm), and the second light source unit 73b is 350 nm or more, for example, i-line ( Irradiating light having a peak wavelength at a wavelength of 365 nm).
  • the first light shielding member 177 capable of shielding light from the first light source unit 73a and the second light shielding member 178 capable of shielding light from the second light source unit 73b include the light source units 73a and 73b.
  • each light shielding member 177 and 178 is also arbitrary, and may be a rotary type or a slide type.
  • the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other.
  • the gaps are adjusted to a predetermined gap, for example, about 100 to 150 ⁇ m, and are arranged close to each other.
  • the first light shielding member 177 is closed and the second light shielding member 178 is opened, and the light from the second light source unit 73 b is incident on the integrator 74, and the plane mirror 75 and the collimation mirror 76. And is incident on the mask M.
  • the first light blocking member 177 is also controlled to be opened, so that light having a short wavelength is incident on the integrator 74 from the first light source unit 73a and reflected by the plane mirror 75 and the collimation mirror 76. Is incident on the mask M. Then, each light of the first light source unit 73a and the second light source unit 73b that has passed through the mask M exposes the positive resist applied on the surface of the substrate W so that the mask pattern of the mask M is exposed to the substrate W. Transcribed. At this time, the thinned pattern can be transferred by the short-wavelength light from the first light source unit 73a, and the resist in the contact portion with the substrate W is also exposed by the light from the second light source unit 73b. can do.
  • the illumination optical system 70e includes the first light source unit 73a that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and the first light source unit 73a.
  • a second light source unit 73b that emits light having spectral characteristics different from those of the first light source unit 73a, and first and second light shielding members 177 that can block light from the first and second light source units 73a and 73b. 178.
  • the opening timings of the first and second light shielding members 177 and 178 are controlled to control the first and second light source units 73a and 73b. Is irradiated onto the substrate W through the mask M at different timings, and the pattern of the mask M is transferred to the substrate W. Therefore, a high-resolution pattern can be obtained, the throughput can be improved, and the light sources 73a and 73b can be switched at an appropriate timing.
  • FIG. 19 is a schematic diagram of an illumination optical system according to a modification of the present embodiment.
  • the plurality of light shielding members includes a first light shielding member 177 capable of shielding light from the first light source unit 73a and all light from the first and second light source units 73a and 73b.
  • a second light shielding member 179 capable of shielding the light. As shown in FIG. 19, the second light shielding member 179 may be provided on the incident surface side of the integrator 74, or may be provided on the output surface side of the integrator 74.
  • the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 178 of the above embodiment.
  • the second light shielding member 179 can use an existing light shielding member provided in the proximity exposure apparatus having one light source unit as it is, and can reduce the apparatus cost.
  • the illumination optical system 70g differs from the proximity exposure apparatus and proximity exposure method of the sixth embodiment in the configuration of the first and second light source units and the plurality of light shielding members.
  • the first and second light source units 73c and 73d include a plurality of first and second light source units 73c and 73d, respectively.
  • the cassette 181 and the frame 182 the light from all the light source parts 73 c and 73 d is arranged to be incident on the incident surface of the integrator 74.
  • each of the cassettes 181 includes ten first light source parts 73d arranged in the width direction and divided in the vertical direction, and ten second light source parts 73d arranged in the width direction. It is attached to the center in two steps.
  • the frame 182 is provided with a plurality of cassettes 181 in the vertical direction and a plurality of cassettes 181 in the horizontal direction.
  • Each of the first and second light source units 73c and 73d also includes ultrahigh pressure mercury lamps 71c and 71d as light emitting units, and reflecting mirrors 72c and 72d that emit light with directivity emitted from the lamps 71c and 71d.
  • the first light source unit 73c irradiates light having a peak wavelength at 350 nm or less, specifically at a short wavelength of j-line (313 nm), and the second light source unit 73d is 350 nm or more.
  • light having a peak wavelength at the wavelength of i-line (365 nm) is irradiated. That is, the illumination optical system 70g of the present embodiment uses a plurality of first and second light source units 73c and 73d that are reduced in size as compared with those of the sixth embodiment that emit light with power of 10 kw or less. Configured.
  • the cassette 181 is provided with a plurality of light shielding members 183 and 184 on the front surface of the respective opening portions 181a of the light source portions 73c and 73d. That is, the plurality of first light shielding members 183 are provided for each of the plurality of first light source parts 73c, and are opened and closed around the rotation shafts 183a provided around the respective openings 181a. The light from the light source unit 73c is passed / shielded.
  • a plurality of second light shielding members 184 are provided for each of the plurality of second light source parts 73d, and are opened and closed around a rotation shaft 184a provided around each opening part 181a. The light from the light source unit 73d is passed / shielded.
  • the first and second light shielding members 183 and 184 may be attached to the cassette 181 as in the present embodiment, or may be attached to the frame 182.
  • the plurality of first light shielding members 183 are closed and the plurality of second light shielding members 184 are opened, so that the plurality of second light source units 73d are controlled. Is incident on the integrator 74, reflected by the plane mirror 75 and the collimation mirror 76, and incident on the mask M.
  • the plurality of first light shielding members 183 are also controlled to open, so that light having a short wavelength is incident on the integrator 74 from the plurality of first light source units 73c, and the plane mirror 75 and collimation are performed. The light is reflected by the mirror 76 and enters the mask M.
  • each light of the plurality of first light source units 73c and the plurality of second light source units 73d transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is formed. It is exposed and transferred to the substrate W. Therefore, also in the present embodiment, the thinned pattern can be transferred by the short wavelength light from the plurality of first light source portions 73c, and the substrate can be transferred by the light from the plurality of second light source portions 73d. The resist in contact with W can also be exposed.
  • the small light source units 73c and 73d as in the present embodiment, since the area of the glass of the lamp is small, the light absorption on the short wavelength side is small, so that it is possible to secure the light emission amount necessary for exposure. it can.
  • the arrangement of the two types of light source units 73c and 73d is determined in advance in the cassette 181, and a plurality of light source units 73c and 73d are arranged adjacent to each other, as in the modification shown in FIG.
  • the first and second light shielding members 183 and 184 that can collectively shield the light sources 73c and 73d may be configured.
  • the plurality of light shielding members 179, 183 are capable of shielding light from the plurality of first light source units 73c, and the first and second light source units 73c. , 73d, and a second light shielding member 179 that can shield all light.
  • the second light shielding member 179 may be provided on the incident surface side of the integrator 74 as illustrated in FIG. 23, or may be provided on the emission surface side of the integrator 74. For this reason, a plurality of first light shielding members 183 are attached to the cassette 181 only on the front surface of the plurality of first light source parts 73c.
  • the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 184 of the above embodiment. Can do.
  • the second light shielding member 179 can use an existing light shielding member provided in a proximity exposure apparatus having one type of light source unit as it is, and can reduce the apparatus cost.
  • the illumination optical systems 70e to 70h of the sixth or seventh embodiment can be applied in combination with the illumination optical systems 70 to 70d having the collimation half angle adjustment mechanism of the first to fifth embodiments.
  • the proximity exposure apparatus and proximity exposure method of the present invention may be applied to the production of a TFT array substrate, and can also be applied to the production of a color filter substrate.
  • the light transmittance at the opening of the mask pattern may be set to 90% or less.
  • the proximity scanning exposure apparatus exposes light for exposure via a plurality of masks M on which a mask pattern is formed on a substantially rectangular substrate W that is floated and supported in the vicinity of the mask M and is transported in a predetermined direction. , And a mask pattern is exposed and transferred onto the substrate W, and a scanning exposure method is adopted in which exposure transfer is performed while the substrate W is moved relative to the plurality of masks M.
  • the light source unit of the present invention is not limited to the two types of light source units, the first and second light source units, and has another type of light source unit that has spectral characteristics different from those of the first and second light source units. It may be a configuration.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

An illumination optical system (70) comprises: a light source (73); an integrator (74) which is constructed from a fly eye lens comprising a plurality of lens cells, and makes the intensity of light from the light source (73) uniform; and a movable light occluding member (78) which is provided on the incident surface side of the integrator (74), and occludes light that is incident at any of the plurality of lens cells in such a way that variable setting is performed to a specified collimation half angle. Thus, the collimation half angle is variably set, and a high-resolution pattern having a desired line width can be obtained.

Description

近接露光装置及び近接露光方法Proximity exposure apparatus and proximity exposure method
　本発明は、近接露光装置及び近接露光方法に関し、より詳細には、液晶ディスプレイ装置のＴＦＴアレイ基板やカラーフィルタ基板の露光転写に好適な近接露光装置及び近接露光方法に関する。 The present invention relates to a proximity exposure apparatus and a proximity exposure method, and more particularly to a proximity exposure apparatus and a proximity exposure method suitable for exposure transfer of a TFT array substrate and a color filter substrate of a liquid crystal display device.
　近年、フラットパネルディスプレイ装置には、画素の開口率の向上のため、カラーフィルタ等においても高解像度が要求されてきている。高解像度を得る露光装置としては、ミラープロジェクション露光装置やレンズプロジェクション露光装置があるものの、装置が高価であったり、大型のパネルに対するスループットが低いという問題がある。 In recent years, flat panel display devices have been required to have high resolution in color filters and the like in order to improve the aperture ratio of pixels. As an exposure apparatus for obtaining high resolution, there are a mirror projection exposure apparatus and a lens projection exposure apparatus, but there are problems that the apparatus is expensive and the throughput for a large panel is low.
　一方、マスクと基板とを近接対向させて露光する近接露光装置では、装置自体は比較的安価であるが、露光面での光強度分布は通常、図１１に示すように、回折や干渉の影響により滑らかな曲線となる。このため、近接露光装置においては、この光強度分布を、図１１に示す理想の光強度分布に近づけて、高解像度化を図ることが望ましい。また、高解像度化を図る手法としては、種々考案されている（例えば、特許文献１～５参照。）。 On the other hand, in a proximity exposure apparatus that exposes a mask and a substrate in close proximity to each other, the apparatus itself is relatively inexpensive, but the light intensity distribution on the exposure surface is usually affected by diffraction and interference as shown in FIG. A smoother curve. For this reason, in the proximity exposure apparatus, it is desirable to increase the resolution by bringing the light intensity distribution close to the ideal light intensity distribution shown in FIG. Further, various techniques for increasing the resolution have been devised (see, for example, Patent Documents 1 to 5).
　特許文献１に記載のカラーフィルタの製造方法では、コリメーション半角を１～２°とすることが開示されている。また、特許文献２に記載のプロキシミティ露光方法では、コリメーション半角が、インテグレータレンズの大きさと、インテグレータレンズからコリメーションミラーまでの距離の関係で決まることが開示されており、該レンズのサイズ、該距離を操作して、１．３～１．７°に調整することが記載されている。特許文献３に記載の近接露光装置では、露光ギャップが変動しても解像度の低下を抑えるべく、レンズエレメントを部分的に隠して、インテグレータレンズの形状を円形にすることが開示されている。
　特許文献４に記載のプロキシミティ露光装置では、エキシマレーザから出射されたパルス状のレーザがビーム整形レンズに入射して、平行なレーザに変換され、径を１／１０にしたフライアイレンズに入射し、均一化されたレーザとして出射され、コリメーションミラーによってコリメーション半角が０．５°以下とされることが記載されている。また、特許文献５に記載の露光照明装置では、光源とフライアイレンズとの間にロッドレンズからなる均一化手段で照明光の強度分布を均一化し、フライアイレンズでフォトマスクに照射される照明光の強度分布を均一化し、コリメート手段で光源から放射された紫外線の照明光を平行光にしてフォトマスクに照射することが記載されている。 In the method of manufacturing a color filter described in Patent Document 1, it is disclosed that the collimation half angle is 1 to 2 °. Further, in the proximity exposure method described in Patent Document 2, it is disclosed that the collimation half-angle is determined by the relationship between the size of the integrator lens and the distance from the integrator lens to the collimation mirror. Is adjusted to 1.3 to 1.7 °. In the proximity exposure apparatus described in Patent Document 3, it is disclosed that the shape of the integrator lens is made circular by partially hiding the lens element in order to suppress a decrease in resolution even if the exposure gap varies.
In the proximity exposure apparatus described in Patent Document 4, a pulsed laser emitted from an excimer laser is incident on a beam shaping lens, converted into a parallel laser, and incident on a fly-eye lens having a diameter of 1/10. It is described that the laser beam is emitted as a uniform laser and the collimation half angle is set to 0.5 ° or less by a collimation mirror. Moreover, in the exposure illumination apparatus described in Patent Document 5, the illumination light intensity is uniformized by a uniformizing means comprising a rod lens between the light source and the fly-eye lens, and the photomask is illuminated by the fly-eye lens. It is described that the light intensity distribution is made uniform, and the ultraviolet illumination light emitted from the light source by the collimating means is converted into parallel light and applied to the photomask.
　また、光源部として用いられている水銀ランプ又は超高圧水銀ランプから射出される照明光には、ｇ線（４３５ｎｍ）の光、ｈ線（４０４ｎｍ）の光、ｉ線（３６５ｎｍ）の光、及びｊ線（３１３ｎｍ）の光が含まれており、従来はｇ線の光、ｈ線の光、ｉ線の光を用いて露光を行っていたが、高解像度化を図るためには、ｊ線の波長域の光の利用が有効であることが知られている（例えば、特許文献５参照。）。特許文献６に記載の投影露光装置では、ｊ線の波長域の光のパワーがｇ線、ｈ線、ｉ線の波長域の光のパワーと比較して小さいという点を考慮し、ｊ線の波長域の光を利用すると共に、他の波長域の光も波長選択フィルタによって切り替えて利用し、色収差の補正が行われた状態で高解像度を重視した露光と、高スループットを重視した露光の双方を行うことが開示されている。 Illumination light emitted from a mercury lamp or an ultrahigh pressure mercury lamp used as a light source unit includes g-line (435 nm) light, h-line (404 nm) light, i-line (365 nm) light, and j-line (313 nm) light is included, and exposure was conventionally performed using g-line light, h-line light, and i-line light. However, in order to increase the resolution, j-line light is used. It is known that the use of light in the wavelength range is effective (see, for example, Patent Document 5). In the projection exposure apparatus described in Patent Document 6, in consideration of the fact that the power of light in the wavelength range of j-line is smaller than the power of light in the wavelength range of g-line, h-line, and i-line, While using light in the wavelength range, and switching to use light in other wavelength ranges with a wavelength selection filter, both exposure that emphasizes high resolution and exposure that emphasizes high throughput with chromatic aberration corrected Is disclosed.
　また、特許文献７に記載の近接露光装置では、内圧の異なるランプを少なくとも２種以上有するランプユニットを備え、各種類のランプを選択的に点灯させることが開示されている。 Further, it is disclosed that the proximity exposure apparatus described in Patent Document 7 includes a lamp unit having at least two types of lamps having different internal pressures, and selectively turns on each type of lamp.
　さらに、特許文献８に記載のレーザーの直接描画による露光装置では、露光用の光と、露光効率を上げるための過熱用の光とを混合した光によって露光するもので、各光を個別に遮光するシャッター部が記載されている。 Further, in the exposure apparatus using direct laser writing described in Patent Document 8, exposure is performed by mixing light for exposure and superheating light for increasing the exposure efficiency, and each light is individually shielded. The shutter part to perform is described.
日本国特開２００７－２４０７１４号公報Japanese Unexamined Patent Publication No. 2007-240714 日本国特開２００７－９４３１０号公報Japanese Unexamined Patent Publication No. 2007-94310 日本国特開２００８－１５８２８２号公報Japanese Unexamined Patent Publication No. 2008-158282 日本国特開２００５－２６５９８５号公報Japanese Unexamined Patent Publication No. 2005-265985 日本国特開２００９－１８２１９１号公報Japanese Unexamined Patent Publication No. 2009-182191 日本国特開２００６－１８４７０９号公報Japanese Unexamined Patent Publication No. 2006-184709 日本国特開２００８－１９１２５２号公報Japanese Unexamined Patent Publication No. 2008-191252 日本国特開２００８－２４２３６５号公報Japanese Unexamined Patent Publication No. 2008-242365
　ところで、コリメーション半角を設定する際に、特許文献２に記載のインテグレータレンズからコリメーションミラーまでの距離を変更することは、照明光学系の大きさが変わってしまい現実的ではない。また、特許文献３にも、インテグレータレンズの大きさや形状によってコリメーション半角が決まることが記載されているが、コリメーション半角を設定する際には、特許文献２と同様の課題が存在する。
　また、基板に露光転写されるパターンは、高解像度であることが望ましいものの、パターン毎に所望の線幅があり、パターン毎に所望の線幅を与えるようにコリメーション半角を可変にすることが求められる。これらの特許文献１～５では、高解像度を狙って、決まった小さいコリメーション半角となるように構成されており、コリメーション半角を容易に変更できるような構成ではない。特に、特許文献５では、エキシマレーザに光源が限定されており、他の光源を使用できないという課題がある。 By the way, when setting the collimation half-angle, changing the distance from the integrator lens to the collimation mirror described in Patent Document 2 is not realistic because the size of the illumination optical system changes. Patent Document 3 also describes that the collimation half angle is determined by the size and shape of the integrator lens. However, when setting the collimation half angle, the same problem as in Patent Document 2 exists.
Moreover, although it is desirable that the pattern to be transferred onto the substrate has a high resolution, each pattern has a desired line width, and the collimation half angle is required to be variable so as to give the desired line width for each pattern. It is done. These Patent Documents 1 to 5 are configured so as to have a fixed small collimation half angle aiming at high resolution, and are not configured to easily change the collimation half angle. In particular, Patent Document 5 has a problem that the light source is limited to the excimer laser, and other light sources cannot be used.
　また、特許文献６に記載の露光装置は、投影露光装置に関するものであり、また、複数種類のランプを切り替えて利用することについては開示されていない。また、特許文献７に記載の近接露光装置においても、複数種類のランプを選択的に発光することで、ランプの切り替えを行うものであり、切り替え時の制御が難しいという問題がある。また、特許文献８に記載の露光装置では、複数のシャッターについて記載されているのみであり、近接露光に関するものではない。 Further, the exposure apparatus described in Patent Document 6 relates to a projection exposure apparatus, and does not disclose that a plurality of types of lamps are switched and used. The proximity exposure apparatus described in Patent Document 7 also has a problem that it is difficult to control at the time of switching because the lamps are switched by selectively emitting a plurality of types of lamps. Moreover, in the exposure apparatus described in Patent Document 8, only a plurality of shutters are described, and it does not relate to proximity exposure.
　本発明は、前述した課題に鑑みてなされたものであり、その目的は、コリメーション半角を可変に設定して、所望の線幅の高解像度なパターンを得る事ができる近接露光装置及び近接露光方法を提供することにある。また、他の目的は、短波長の光を照射する光源部を利用して、高解像度なパターンを得る事ができるとともに、また、他の波長の光を照射する光源部を利用して、スループットを向上することができ、さらに、各光源部の切り替えを適切なタイミングで行うことができる近接露光装置及び近接露光方法を提供することにある。 The present invention has been made in view of the above-described problems, and an object thereof is a proximity exposure apparatus and a proximity exposure method capable of obtaining a high-resolution pattern having a desired line width by variably setting a collimation half angle. Is to provide. Another object is to obtain a high-resolution pattern by using a light source unit that irradiates light of a short wavelength, and by using a light source unit that irradiates light of another wavelength, It is another object of the present invention to provide a proximity exposure apparatus and a proximity exposure method capable of switching each light source unit at an appropriate timing.
　本発明の上記目的は、下記の構成により達成される。
（１）　基板を保持する基板保持部と、
　前記基板と対向するように、マスクを保持するマスク保持部と、
　前記マスクに向けてパターン露光用の光を照射する照明光学系と、
を有し、前記基板と前記マスクとを所定のギャップに近接させた状態で、前記照明光学系からの光を前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に転写する近接露光装置であって、
　前記照明光学系は、前記基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構を有することを特徴とする近接露光装置。
（２）　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
　前記コリメーション半角調整機構は、前記インテグレータの入射面側又は出射面側に設けられ、前記複数のレンズセルのいずれかに入射される光または前記複数のレンズセルのいずれかから出射される光を遮光又は減光する光強度低減部材であることを特徴とする（１）に記載の近接露光装置。
（３）　前記光強度低減部材は、それぞれ独立して移動可能な複数の減光フィルタを有することを特徴とする（２）に記載の近接露光装置。
（４）　前記複数の減光フィルタは、複数種類の減光フィルタからなり、前記減光フィルタの種類以上の複数の減光率にて遮光可能であることを特徴とする（３）に記載の近接露光装置。
（５）　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
　前記コリメーション半角調整機構は、前記光源部と前記インテグレータとの間に設けられ、前記インテグレータへの入射光径または入射角を変更するレンズであることを特徴とする（１）に記載の近接露光装置。
（６）　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
　前記コリメーション半角調整機構は、前記インテグレータへの入射光径を変更すべく、前記インテグレータの入射面に対して鉛直方向に移動可能な前記光源部であることを特徴とする（１）に記載の近接露光装置。
（７）　前記照明光学系は、前記光源部と前記インテグレータとの間に設けられ、前記光源部からの光の強度を均一化する光均一化光学部品をさらに備えることを特徴とする（２）から（６）のいずれかに記載の近接露光装置。
（８）　前記マスクのパターンは、前記基板に露光されるパターンの所望の線幅と異なる線幅を有することを特徴とする（１）に記載の近接露光装置。
（９）　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
　前記コリメーション半角調整機構は、前記インテグレータの出射面側に設けられ、前記複数のレンズセルのいずれかから出射される光を遮光する遮光部材であることを特徴とする（１）に記載の近接露光装置。
（１０）　前記光源部からの光は直接、前記インテグレータに入射されることを特徴とする（９）に記載の近接露光装置。
（１１）　前記照明光学系は、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部と、該第１の光源部と分光特性の異なる光を照射する第２の光源部と、前記第１及び第２の光源部からの光を遮光可能な複数の遮光部材と、を有し、
　前記照明光学系は、前記複数の遮光部材の開タイミングを制御することによって前記第１及び第２の光源部の前記光を異なるタイミングで照射可能であることを特徴とする（１）に記載の近接露光装置。
（１２）　前記複数の遮光部材は、前記第１の光源部からの光を遮光可能な第１の遮光部材と、前記第２の光源部からの光を遮光可能な第２の遮光部材と、を有することを特徴とする（１１）に記載の近接露光装置。
（１３）　前記第１及び第２の光源部は、それぞれ複数の第１及び第２の光源部からなり、
　前記第１の遮光部材は、前記複数の第１の光源部毎に設けられ、前記複数の第１の光源部からの光をそれぞれ遮光可能な複数の第１の遮光部材からなり、
　前記第２の遮光部材は、前記複数の第２の光源部毎に設けられ、前記複数の第２の光源部からの光をそれぞれ遮光可能な複数の第２の遮光部材からなることを特徴とする（１２）に記載の近接露光装置。
（１４）　前記複数の第１及び第２の光源部の光がインテグレータレンズの入射面に入射されるように、前記複数の第１及び第２の光源部を支持するカセットをさらに備え、
　前記複数の第１及び第２の遮光部材は、前記カセットに取り付けられることを特徴とする（１３）に記載の近接露光装置。
（１５）　前記複数の遮光部材は、前記第１の光源部からの光を遮光可能な第１の遮光部材と、前記第１及び第２の光源部からの全ての光を遮光可能な第２の遮光部材と、を有することを特徴とする（１１）に記載の近接露光装置。
（１６）　前記第１及び第２の光源部は、それぞれ複数の第１及び第２の光源部からなり、
　前記第１の遮光部材は、前記複数の第１の光源部毎に設けられ、前記複数の第１の光源部からの光をそれぞれ遮光可能な複数の第１の遮光部材からなることを特徴とする（１５）に記載の近接露光装置。
（１７）　前記複数の第１及び第２の光源部の光がインテグレータレンズの入射面に入射されるように、前記複数の第１及び第２の光源部を支持するカセットをさらに備え、
　前記複数の第１の遮光部材は、前記カセットに取り付けられることを特徴とする（１６）に記載の近接露光装置。
（１８）　基板を保持する基板保持部と、前記基板と対向するように、マスクを保持するマスク保持部と、前記マスクに向けてパターン露光用の光を照射する照明光学系と、を有し、前記照明光学系は、前記基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構を有する近接露光装置の近接露光方法であって、
　前記コリメーション半角調整機構によって基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整する工程と、
　前記基板と前記マスクとを所定のギャップに近接させた状態で、前記照明光学系からの光を前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に露光転写する工程と、を備えることを特徴とする近接露光方法。
（１９）　前記照明光学系は、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部と、該第１の光源部と分光特性の異なる光を照射する第２の光源部と、前記第１及び第２の光源部からの光を遮光可能な複数の遮光部材と、を有し、
　前記露光転写工程では、前記基板と前記マスクとを所定のギャップに近接させた状態で、前記複数の遮光部材の開タイミングを制御することで前記第１及び第２の光源部からの光を異なるタイミングで前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に転写することを特徴とする（１８）に記載の近接露光方法。 The above object of the present invention can be achieved by the following constitution.
(1) a substrate holder for holding the substrate;
A mask holding unit for holding a mask so as to face the substrate;
An illumination optical system that emits light for pattern exposure toward the mask;
In the state where the substrate and the mask are brought close to a predetermined gap, the substrate is irradiated with light from the illumination optical system through the mask, and the pattern of the mask is transferred to the substrate A proximity exposure apparatus,
The proximity exposure apparatus, wherein the illumination optical system includes a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred onto the substrate.
(2) The illumination optical system further includes: a light source unit; and an integrator configured by a fly-eye lens including a plurality of lens cells to equalize the intensity of light from the light source unit.
The collimation half-angle adjustment mechanism is provided on an incident surface side or an emission surface side of the integrator, and blocks light incident on one of the plurality of lens cells or light emitted from any of the plurality of lens cells. Alternatively, the proximity exposure apparatus according to (1), which is a light intensity reducing member that reduces light.
(3) The proximity exposure apparatus according to (2), wherein the light intensity reducing member has a plurality of neutral density filters that can move independently.
(4) The plurality of neutral density filters include a plurality of types of neutral density filters, and can be shielded with a plurality of neutral density ratios equal to or greater than the type of neutral density filters. Proximity exposure device.
(5) The illumination optical system further includes a light source unit and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
The proximity exposure apparatus according to (1), wherein the collimation half-angle adjustment mechanism is a lens that is provided between the light source unit and the integrator and changes a diameter or an incident angle of light incident on the integrator. .
(6) The illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
The proximity according to (1), wherein the collimation half-angle adjustment mechanism is the light source unit that is movable in a vertical direction with respect to an incident surface of the integrator so as to change an incident light diameter to the integrator. Exposure device.
(7) The illumination optical system further includes a light uniformizing optical component that is provided between the light source unit and the integrator and uniformizes the intensity of light from the light source unit (2). To the proximity exposure apparatus according to any one of (6).
(8) The proximity exposure apparatus according to (1), wherein the pattern of the mask has a line width different from a desired line width of the pattern exposed on the substrate.
(9) The illumination optical system further includes a light source unit and an integrator that is configured by a fly-eye lens including a plurality of lens cells and uniformizes the intensity of light from the light source unit,
The proximity exposure according to (1), wherein the collimation half-angle adjustment mechanism is a light shielding member that is provided on an exit surface side of the integrator and shields light emitted from any of the plurality of lens cells. apparatus.
(10) The proximity exposure apparatus according to (9), wherein light from the light source unit is directly incident on the integrator.
(11) The illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit. And a plurality of light shielding members capable of shielding light from the first and second light source units,
(1) The illumination optical system can irradiate the light of the first and second light source units at different timings by controlling the opening timing of the plurality of light shielding members. Proximity exposure device.
(12) The plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second light shielding member capable of shielding light from the second light source unit, (9) The proximity exposure apparatus according to (11),
(13) Each of the first and second light source units includes a plurality of first and second light source units,
The first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units,
The second light shielding member is provided for each of the plurality of second light source units, and includes a plurality of second light shielding members capable of shielding light from the plurality of second light source units, respectively. The proximity exposure apparatus according to (12).
(14) The apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
The proximity exposure apparatus according to (13), wherein the plurality of first and second light shielding members are attached to the cassette.
(15) The plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second capable of shielding all light from the first and second light source units. The proximity exposure apparatus according to (11), further comprising: a light shielding member.
(16) Each of the first and second light source units includes a plurality of first and second light source units,
The first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units, respectively. The proximity exposure apparatus according to (15).
(17) The apparatus further includes a cassette that supports the plurality of first and second light source units so that light from the plurality of first and second light source units is incident on an incident surface of the integrator lens.
The proximity exposure apparatus according to (16), wherein the plurality of first light shielding members are attached to the cassette.
(18) a substrate holding unit that holds the substrate; a mask holding unit that holds the mask so as to face the substrate; and an illumination optical system that emits light for pattern exposure toward the mask. The illumination optical system is a proximity exposure method of a proximity exposure apparatus having a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred to the substrate,
Adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate by the collimation half angle adjustment mechanism;
Irradiating the substrate with light from the illumination optical system through the mask in a state where the substrate and the mask are close to a predetermined gap, and exposing and transferring the pattern of the mask to the substrate; A proximity exposure method comprising:
(19) The illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit. And a plurality of light shielding members capable of shielding light from the first and second light source units,
In the exposure transfer step, the light from the first and second light source units is made different by controlling the opening timing of the plurality of light shielding members in a state where the substrate and the mask are brought close to a predetermined gap. The proximity exposure method according to (18), wherein the substrate is irradiated with light through the mask at a timing, and the pattern of the mask is transferred to the substrate.
　本発明の近接露光装置及び近接露光方法によれば、照明光学系が、基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構を有し、コリメーション半角調整機構によって基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整し、基板とマスクとを所定のギャップに近接させた状態で、照明光学系からの光をマスクを介して前記基板に照射し、マスクのパターンを基板に転写する。これにより、コリメーション半角を可変に設定して、所望の線幅の高解像度なパターンを得る事ができる。 According to the proximity exposure apparatus and the proximity exposure method of the present invention, the illumination optical system has a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate, The collimation half-angle adjustment mechanism adjusts to a predetermined collimation half-angle corresponding to the desired line width of the pattern transferred to the substrate, and masks the light from the illumination optical system with the substrate and mask close to a predetermined gap. And irradiating the substrate through the mask, and transferring the mask pattern onto the substrate. Thereby, the collimation half angle can be set variably, and a high-resolution pattern having a desired line width can be obtained.
　また、本発明の近接露光装置及び近接露光方法によれば、照明光学系は、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部と、該第１の光源部と分光特性の異なる光を照射する第２の光源部と、第１及び第２の光源部からの光を遮光可能な複数の遮光部材と、を有し、照明光学系は、複数の遮光部材の開タイミングを制御することによって第１及び第２の光源部の光を異なるタイミングで照射可能である。これにより、短波長の光を照射する第１の光源部を利用して、高解像度なパターンを得る事ができるとともに、また、第２の光源部を利用して、スループットを向上することができ、さらに、各光源部の切り替えを適切なタイミングで行うことができる。 Further, according to the proximity exposure apparatus and the proximity exposure method of the present invention, the illumination optical system includes a first light source unit that emits light having a peak wavelength at a short wavelength of 350 nm or less, the first light source unit, The illumination optical system includes a second light source unit that emits light having different characteristics and a plurality of light shielding members capable of shielding light from the first and second light source units. By controlling the timing, it is possible to irradiate the light from the first and second light source units at different timings. Accordingly, a high-resolution pattern can be obtained by using the first light source unit that irradiates light having a short wavelength, and the throughput can be improved by using the second light source unit. Furthermore, switching of each light source unit can be performed at an appropriate timing.
本発明の第１実施形態に係る分割逐次近接露光装置を説明するための一部分解斜視図である。It is a partial exploded perspective view for demonstrating the division | segmentation successive proximity exposure apparatus which concerns on 1st Embodiment of this invention. 図１に示す分割逐次近接露光装置の正面図である。It is a front view of the division | segmentation successive proximity exposure apparatus shown in FIG. マスクステージの断面図である。It is sectional drawing of a mask stage. 第１実施形態の照明光学系の模式図である。It is a schematic diagram of the illumination optical system of 1st Embodiment. （ａ）は、図４のＶ部拡大図であり、（ｂ）は、インテグレータを細分化した状態を示すＶ部拡大図である。(A) is the V section enlarged view of FIG. 4, (b) is the V section enlarged view which shows the state which subdivided the integrator. 第１実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 1st Embodiment. 本発明の第２実施形態に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on 2nd Embodiment of this invention. 第２実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 2nd Embodiment. 本発明の第３実施形態に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on 3rd Embodiment of this invention. 第３実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 3rd Embodiment. 本発明の第４実施形態に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on 4th Embodiment of this invention. 第４実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 4th Embodiment. 本発明の第５実施形態に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on 5th Embodiment of this invention. 本実施形態のマスクパターンを備えるマスクと露光転写される基板のパターンの模式図である。It is a schematic diagram of the pattern of the board | substrate with which the mask provided with the mask pattern of this embodiment and exposure transfer are carried out. 本実施形態の他のマスクパターンを備えるマスクと露光転写される基板のパターンの模式図である。It is a schematic diagram of the pattern of the board | substrate which carries out exposure transfer by the mask provided with the other mask pattern of this embodiment. 本実施形態のさらに他のマスクパターンを備えるマスクの模式図である。It is a schematic diagram of a mask provided with the further another mask pattern of this embodiment. 第５実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 5th Embodiment. 第６実施形態の照明光学系の模式図である。It is a schematic diagram of the illumination optical system of 6th Embodiment. 第６実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 6th Embodiment. 本発明の第７実施形態に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on 7th Embodiment of this invention. （ａ）は、図２０のマスクホルダを示す正面図であり、（ｂ）はその上面図であり、（ｃ）はその側面図である。(A) is a front view which shows the mask holder of FIG. 20, (b) is the top view, (c) is the side view. （ａ）は、図２０のマスクホルダの変形例を示す正面図であり、（ｂ）はその上面図であり、（ｃ）はその側面図である。(A) is a front view which shows the modification of the mask holder of FIG. 20, (b) is the top view, (c) is the side view. 本発明の第７実施形態の変形例に係る照明光学系の模式図である。It is a schematic diagram of the illumination optical system which concerns on the modification of 7th Embodiment of this invention. （ａ）は、図２３のマスクホルダを示す正面図であり、（ｂ）はその上面図であり、（ｃ）はその側面図である。(A) is the front view which shows the mask holder of FIG. 23, (b) is the top view, (c) is the side view. 一般的なマスクパターンを有するマスクを用いて露光した場合の露光面での光の強度分布と、理想の光の強度分布を示すグラフである。It is a graph which shows the light intensity distribution in the exposure surface at the time of exposing using the mask which has a general mask pattern, and an ideal light intensity distribution.
　以下、本発明の各実施形態に係る近接露光装置及び近接露光方法を図面に基づいて詳細に説明する。 Hereinafter, a proximity exposure apparatus and a proximity exposure method according to each embodiment of the present invention will be described in detail with reference to the drawings.
（第１実施形態）
　図１及び図２に示すように、一実施形態の分割逐次近接露光装置ＰＥは、マスクＭを保持するマスクステージ１０と、ガラス基板（以下、単に「基板Ｗ」とも称する。）Ｗを保持する基板ステージ２０と、パターン露光用の光を照射する照明光学系７０（図４参照。）と、を備えている。 (First embodiment)
As shown in FIGS. 1 and 2, the divided sequential proximity exposure apparatus PE of one embodiment holds a mask stage 10 that holds a mask M and a glass substrate (hereinafter also simply referred to as “substrate W”) W. A substrate stage 20 and an illumination optical system 70 (see FIG. 4) for irradiating light for pattern exposure are provided.
　なお、基板Ｗは、マスクＭに対向配置されており、このマスクＭに描かれたマスクパターンを露光転写すべく表面（マスクＭの対向面側）にレジストが塗布されている。 The substrate W is disposed so as to face the mask M, and a resist is coated on the surface (opposite surface side of the mask M) in order to expose and transfer the mask pattern drawn on the mask M.
　マスクステージ１０は、中央部に矩形形状の開口１１ａが形成されるマスクステージベース１１と、マスクステージベース１１の開口１１ａにＸ軸，Ｙ軸，θ方向に移動可能に
装着されるマスク保持部であるマスク保持枠１２と、マスクステージベース１１の上面に設けられ、マスク保持枠１２をＸ軸，Ｙ軸，θ方向に移動させて、マスクＭの位置を調整するマスク駆動機構１６と、を備える。 The mask stage 10 is a mask stage base 11 in which a rectangular opening 11a is formed at the center, and a mask holding part that is mounted on the opening 11a of the mask stage base 11 so as to be movable in the X axis, Y axis, and θ directions. A mask holding frame 12 and a mask driving mechanism 16 that is provided on the upper surface of the mask stage base 11 and adjusts the position of the mask M by moving the mask holding frame 12 in the X axis, Y axis, and θ directions. .
　マスクステージベース１１は、装置ベース５０上に立設される支柱５１、及び支柱５１の上端部に設けられるＺ軸移動装置５２によりＺ軸方向に移動可能に支持され（図２参照。）、基板ステージ２０の上方に配置される。 The mask stage base 11 is supported by a column 51 standing on the apparatus base 50 and a Z-axis moving device 52 provided at the upper end of the column 51 so as to be movable in the Z-axis direction (see FIG. 2). It is arranged above the stage 20.
　図３に示すように、マスクステージベース１１の開口１１ａの周縁部の上面には、平面ベアリング１３が複数箇所配置されており、マスク保持枠１２は、その上端外周縁部に設けられるフランジ１２ａを平面ベアリング１３に載置している。これにより、マスク保持枠１２は、マスクステージベース１１の開口１１ａに所定のすき間を介して挿入されるので、このすき間分だけＸ軸，Ｙ軸，θ方向に移動可能となる。 As shown in FIG. 3, a plurality of planar bearings 13 are arranged on the upper surface of the peripheral edge of the opening 11a of the mask stage base 11, and the mask holding frame 12 has a flange 12a provided at the outer peripheral edge of the upper end. It is mounted on the flat bearing 13. As a result, the mask holding frame 12 is inserted into the opening 11a of the mask stage base 11 through a predetermined gap, so that the mask holding frame 12 can move in the X axis, Y axis, and θ directions by the gap.
　また、マスク保持枠１２の下面には、マスクＭを保持するチャック部１４が間座１５を介して固定されている。このチャック部１４には、マスクＭのマスクパターンが描かれていない周縁部を吸着するための複数の吸引ノズル１４ａが開設されており、マスクＭは、吸引ノズル１４ａを介して図示しない真空式吸着装置によりチャック部１４に着脱自在に保持される。また、チャック部１４は、マスク保持枠１２と共にマスクステージベース１１に対してＸ軸，Ｙ軸，θ方向に移動可能である。 Further, a chuck portion 14 for holding the mask M is fixed to the lower surface of the mask holding frame 12 via a spacer 15. The chuck portion 14 is provided with a plurality of suction nozzles 14a for sucking the peripheral portion of the mask M on which the mask pattern is not drawn, and the mask M is not shown in the drawing through the suction nozzle 14a. It is detachably held on the chuck portion 14 by the apparatus. The chuck portion 14 can move in the X axis, Y axis, and θ directions with respect to the mask stage base 11 together with the mask holding frame 12.
　マスク駆動機構１６は、マスク保持枠１２のＸ軸方向に沿う一辺に取り付けられる２台のＹ軸方向駆動装置１６ｙと、マスク保持枠１２のＹ軸方向に沿う一辺に取り付けられる１台のＸ軸方向駆動装置１６ｘと、を備える。 The mask driving mechanism 16 includes two Y-axis direction driving devices 16y attached to one side along the X-axis direction of the mask holding frame 12, and one X-axis attached to one side along the Y-axis direction of the mask holding frame 12. Direction drive device 16x.
　Ｙ軸方向駆動装置１６ｙは、マスクステージベース１１上に設置され、Ｙ軸方向に伸縮するロッド１６ｂを有する駆動用アクチュエータ（例えば、電動アクチュエータ等）１６ａと、ロッド１６ｂの先端にピン支持機構１６ｃを介して連結されるスライダ１６ｄと、マスク保持枠１２のＸ軸方向に沿う辺部に取り付けられ、スライダ１６ｄを移動可能に取り付ける案内レール１６ｅと、を備える。なお、Ｘ軸方向駆動装置１６ｘも、Ｙ軸方向駆動装置１６ｙと同様の構成を有する。 The Y-axis direction driving device 16y is installed on the mask stage base 11, and has a driving actuator (for example, an electric actuator) 16a having a rod 16b that expands and contracts in the Y-axis direction, and a pin support mechanism 16c at the tip of the rod 16b. And a guide rail 16e attached to a side portion of the mask holding frame 12 along the X-axis direction and movably attached to the slider 16d. The X-axis direction drive device 16x has the same configuration as the Y-axis direction drive device 16y.
　そして、マスク駆動機構１６では、１台のＸ軸方向駆動装置１６ｘを駆動させることによりマスク保持枠１２をＸ軸方向に移動させ、２台のＹ軸方向駆動装置１６ｙを同等に駆動させることによりマスク保持枠１２をＹ軸方向に移動させる。また、２台のＹ軸方向駆動装置１６ｙのどちらか一方を駆動することによりマスク保持枠１２をθ方向に移動（Ｚ軸回りの回転）させる。 In the mask drive mechanism 16, the mask holding frame 12 is moved in the X-axis direction by driving one X-axis direction drive device 16x, and the two Y-axis direction drive devices 16y are driven equally. The mask holding frame 12 is moved in the Y axis direction. In addition, the mask holding frame 12 is moved in the θ direction (rotated about the Z axis) by driving one of the two Y-axis direction driving devices 16y.
　さらに、マスクステージベース１１の上面には、図１に示すように、マスクＭと基板Ｗとの対向面間のギャップを測定するギャップセンサ１７と、チャック部１４に保持されるマスクＭの取り付け位置を確認するためのアライメントカメラ１８と、が設けられる。これらギャップセンサ１７及びアライメントカメラ１８は、移動機構１９を介してＸ軸，Ｙ軸方向に移動可能に保持され、マスク保持枠１２内に配置される。 Further, on the upper surface of the mask stage base 11, as shown in FIG. 1, a gap sensor 17 for measuring a gap between the opposing surfaces of the mask M and the substrate W, and a mounting position of the mask M held by the chuck portion 14. And an alignment camera 18 for confirming the above. The gap sensor 17 and the alignment camera 18 are held so as to be movable in the X-axis and Y-axis directions via the moving mechanism 19 and are arranged in the mask holding frame 12.
　また、マスク保持枠１２上には、図１に示すように、マスクステージベース１１の開口１１ａのＸ軸方向の両端部に、マスクＭの両端部を必要に応じて遮蔽するアパーチャブレード３８が設けられる。このアパーチャブレード３８は、モータ、ボールねじ、及びリニアガイド等からなるアパーチャブレード駆動機構３９によりＸ軸方向に移動可能とされて、マスクＭの両端部の遮蔽面積を調整する。なお、アパーチャブレード３８は、開口１１ａのＸ軸方向の両端部だけでなく、開口１１ａのＹ軸方向の両端部に同様に設けられている。 On the mask holding frame 12, as shown in FIG. 1, aperture blades 38 are provided at both ends in the X-axis direction of the opening 11a of the mask stage base 11 to shield both ends of the mask M as necessary. It is done. The aperture blade 38 is movable in the X-axis direction by an aperture blade drive mechanism 39 including a motor, a ball screw, a linear guide, and the like, and adjusts the shielding area at both ends of the mask M. The aperture blades 38 are provided not only at both ends of the opening 11a in the X-axis direction but also at both ends of the opening 11a in the Y-axis direction.
　基板ステージ２０は、図１及び図２に示すように、基板Ｗを保持する基板保持部２１と、基板保持部２１を装置ベース５０に対してＸ軸，Ｙ軸，Ｚ軸方向に移動する基板駆動機構２２と、を備える。基板保持部２１は、図示しない真空吸着機構によって基板Ｗを着脱自在に保持する。基板駆動機構２２は、基板保持部２１の下方に、Ｙ軸テーブル２３、Ｙ軸送り機構２４、Ｘ軸テーブル２５、Ｘ軸送り機構２６、及びＺ－チルト調整機構２７と、を備える。 As shown in FIGS. 1 and 2, the substrate stage 20 includes a substrate holding unit 21 that holds the substrate W, and a substrate that moves the substrate holding unit 21 in the X-axis, Y-axis, and Z-axis directions with respect to the apparatus base 50. Drive mechanism 22. The substrate holding unit 21 detachably holds the substrate W by a vacuum suction mechanism (not shown). The substrate drive mechanism 22 includes a Y-axis table 23, a Y-axis feed mechanism 24, an X-axis table 25, an X-axis feed mechanism 26, and a Z-tilt adjustment mechanism 27 below the substrate holder 21.
　Ｙ軸送り機構２４は、図２に示すように、リニアガイド２８と送り駆動機構２９とを備えて構成され、Ｙ軸テーブル２３の裏面に取り付けられたスライダ３０が、装置ベース５０上に延びる２本の案内レール３１に転動体（図示せず）を介して跨架されると共に、モータ３２とボールねじ装置３３とによってＹ軸テーブル２３を案内レール３１に沿って駆動する。 As shown in FIG. 2, the Y-axis feed mechanism 24 includes a linear guide 28 and a feed drive mechanism 29, and a slider 30 attached to the back surface of the Y-axis table 23 extends 2 on the apparatus base 50. The Y-axis table 23 is driven along the guide rail 31 by a motor 32 and a ball screw device 33 while straddling the guide rail 31 through a rolling element (not shown).
　なお、Ｘ軸送り機構２６もＹ軸送り機構２４と同様の構成を有し、Ｘ軸テーブル２５をＹ軸テーブル２３に対してＸ方向に駆動する。また、Ｚ－チルト調整機構２７は、くさび状の移動体３４，３５と送り駆動機構３６とを組み合わせてなる可動くさび機構をＸ方向の一端側に１台、他端側に２台配置することで構成される。なお、送り駆動機構２９，３６は、モータとボールねじ装置とを組み合わせた構成であってもよく、固定子と可動子とを有するリニアモータであってもよい。また、Ｚ-チルト調整機構２７の設置数は任意である。 The X-axis feed mechanism 26 has the same configuration as the Y-axis feed mechanism 24, and drives the X-axis table 25 in the X direction with respect to the Y-axis table 23. The Z-tilt adjustment mechanism 27 has one movable wedge mechanism, which is a combination of the wedge-shaped moving bodies 34 and 35 and the feed drive mechanism 36, arranged at one end in the X direction and two at the other end. Consists of. The feed drive mechanisms 29 and 36 may be a combination of a motor and a ball screw device, or may be a linear motor having a stator and a mover. Further, the number of Z-tilt adjustment mechanisms 27 installed is arbitrary.
　これにより、基板駆動機構２２は、基板保持部２１をＸ方向及びＹ方向に送り駆動するとともに、マスクＭと基板Ｗとの対向面間のギャップを微調整するように、基板保持部２１をＺ軸方向に微動且つチルト調整する。 Thereby, the substrate driving mechanism 22 feeds and drives the substrate holding unit 21 in the X direction and the Y direction, and moves the substrate holding unit 21 to Z so as to finely adjust the gap between the opposing surfaces of the mask M and the substrate W. Fine movement and tilt adjustment in the axial direction.
　基板保持部２１のＸ方向側部とＹ方向側部にはそれぞれバーミラー６１，６２が取り付けられ、また、装置ベース５０のＹ方向端部とＸ方向端部には、計３台のレーザー干渉計６３，６４，６５が設けられている。これにより、レーザー干渉計６３，６４，６５からレーザー光をバーミラー６１，６２に照射し、バーミラー６１，６２により反射されたレーザー光を受光して、レーザー光とバーミラー６１，６２により反射されたレーザー光との干渉を測定して基板ステージ２０の位置を検出する。 Bar mirrors 61 and 62 are respectively attached to the X-direction side and Y-direction side of the substrate holding unit 21, and a total of three laser interferometers are installed at the Y-direction end and the X-direction end of the apparatus base 50. 63, 64, 65 are provided. As a result, the laser beams are irradiated from the laser interferometers 63, 64, 65 to the bar mirrors 61, 62, the laser beams reflected by the bar mirrors 61, 62 are received, and the laser beams and the laser beams reflected by the bar mirrors 61, 62 are received. The position of the substrate stage 20 is detected by measuring interference with light.
　図４に示すように、照明光学系７０は、発光部としての超高圧水銀ランプ７１と、このランプ７１から発生された光に指向性をもたせて射出する反射鏡７２と、を含む光源部７３と、複数のレンズセルからなるフライアイレンズによって構成されている、光源部７３からの光の強度を均一化するインテグレータ７４と、インテグレータ７４の出射面から出射された光路の向きを変える平面鏡７５と、コリメーションミラー７６と、光源部７３とインテグレータ７４との間に配置されて照射された光を透過・遮断するように開閉制御する露光制御用シャッター７７と、を備える。なお、ランプ７１は単一のランプに限らず、複数個のランプを組み合わせたものであってもよい。また、光源部７３としては、ランプ７１に限らず、レーザー光であってもよい。 As shown in FIG. 4, the illumination optical system 70 includes a light source unit 73 including an ultra-high pressure mercury lamp 71 as a light emitting unit, and a reflecting mirror 72 that emits light generated from the lamp 71 with directivity. And an integrator 74 that is made up of a fly-eye lens composed of a plurality of lens cells and that uniformizes the intensity of light from the light source unit 73, and a plane mirror 75 that changes the direction of the optical path emitted from the exit surface of the integrator 74. A collimation mirror 76, and an exposure control shutter 77 that is disposed between the light source unit 73 and the integrator 74 and controls opening and closing so as to transmit and block the irradiated light. The lamp 71 is not limited to a single lamp, and may be a combination of a plurality of lamps. The light source unit 73 is not limited to the lamp 71 and may be laser light.
　また、本実施形態の照明光学系７０は、基板Ｗに転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構として、インテグレータ７４の入射面側に設けられ、所定のコリメーション半角に設定されるように、複数のレンズセルのいずれかに入射される光を遮光する光強度低減部材である遮光部材７８と、光源部７３とインテグレータ７４との間に設けられ、光源部７３からの光の強度を均一化する光均一化光学部品としての他のインテグレータ７９と、を備える。 The illumination optical system 70 of the present embodiment is provided on the incident surface side of the integrator 74 as a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate W. Provided between the light source unit 73 and the integrator 74, and a light blocking member 78 that is a light intensity reducing member that blocks light incident on any of the plurality of lens cells so as to be set to a predetermined collimation half angle. And another integrator 79 as a light uniformizing optical component that uniformizes the intensity of light from the light source unit 73.
　コリメーション半角は、インテグレータ径とコリメーションミラー７６（又は、コリメーションレンズ）によって決まるが、遮光部材７８は、インテグレータ７４からの出射光が拡散せずに、出射光がより平行光に近くなるように設けられる。具体的に、遮光部材７８は、コリメーション半角内の角度の大きい光に寄与するレンズセルの部分を遮光して、所定のコリメーション半角を与えるように移動可能に構成される。なお、コリメーション半角は、０．１～２．０°の間で設定されるようにするのが好ましい。コリメーション半角が０．１°より小さいと、転写パターンに歪みが発生する一方、２．０°より大きいと、転写パターンのぼけ量が大きくなる。ただし、遮光部材７８によって遮光すると、照度均一性が悪化するため、その場合には、分割数の多いインテグレータ７４を採用することで均一性を向上させている。 The collimation half angle is determined by the diameter of the integrator and the collimation mirror 76 (or collimation lens), but the light shielding member 78 is provided so that the emitted light from the integrator 74 does not diffuse and the emitted light becomes closer to parallel light. . Specifically, the light shielding member 78 is configured to be movable so as to shield a portion of the lens cell that contributes to light having a large angle within the collimation half angle and to give a predetermined collimation half angle. The collimation half angle is preferably set between 0.1 and 2.0 °. When the collimation half angle is less than 0.1 °, the transfer pattern is distorted. On the other hand, when the collimation half angle is greater than 2.0 °, the amount of blur of the transfer pattern increases. However, if the light is blocked by the light blocking member 78, the illuminance uniformity deteriorates. In this case, the uniformity is improved by employing the integrator 74 having a large number of divisions.
　また、遮光部材７８としては、鉄、アルミニウム、タングステン、タンタルなどの金属であればよく、耐熱性を考慮するとタンタルが好ましく、可動性を考慮すると、軽いアルミニウムが好ましい。また、遮光部材７８は、光源部７３からの光がインテグレータ７４内に円形形状に入射されるようにレンズセルの外側部分を遮光するようにしてもよいし、四角形形状に入射されるようにレンズセルの外側部分を遮光するようにしてもよい。 Further, the light shielding member 78 may be a metal such as iron, aluminum, tungsten, tantalum, tantalum is preferable in consideration of heat resistance, and light aluminum is preferable in consideration of mobility. Further, the light shielding member 78 may shield the outer portion of the lens cell so that the light from the light source unit 73 enters the integrator 74 in a circular shape, or the lens so that the light is incident in a square shape. The outer portion of the cell may be shielded from light.
　このような露光装置ＰＥにおいて、図４に示すように、基板ステージ２０上に載置された基板Ｗと、マスク保持枠１２に保持された、マスクパターンを有するマスクＭとが、これらの対向面間のギャップを例えば１００～３００μｍ程度の隙間に調整されて近接対向配置される。そして、光源部７３からの露光用の光が、他のインテグレータ７９に入射され、さらに、遮光部材７８を可動して部分的に遮光されたインテグレータ７４で集光され、平面鏡７５およびコリメーションミラー７６で反射されて所定のコリメーション角を持った平面光とされてマスクＭに入射する。そして、マスクＭを透過した露光用の光は、基板Ｗの表面に塗布されたポジ型レジストを感光させてマスクＭのマスクパターンが基板Ｗに露光転写される。 In such an exposure apparatus PE, as shown in FIG. 4, the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other. The gap between them is adjusted to a gap of about 100 to 300 μm, for example, and is arranged close to each other. Then, light for exposure from the light source unit 73 is incident on another integrator 79, and further collected by an integrator 74 that is partially shielded by moving a light shielding member 78, and is collected by a plane mirror 75 and a collimation mirror 76. The light is reflected to be a plane light having a predetermined collimation angle and enters the mask M. Then, the exposure light transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is exposed and transferred to the substrate W.
　従って、遮光部材７８の移動によってインテグレータ７４に入射される光を部分的に遮光することで、所定のコリメーション半角を与えることができるので、露光すべき対象となる基板Ｗに転写されるパターンの所望の線幅に応じてコリメーション半角を可変に設定することができ、所望の線幅の高解像度なパターンを得る事ができる。 Accordingly, a predetermined collimation half angle can be given by partially blocking the light incident on the integrator 74 by the movement of the light blocking member 78, so that a desired pattern to be transferred to the substrate W to be exposed can be obtained. The collimation half angle can be variably set according to the line width, and a high-resolution pattern having a desired line width can be obtained.
　また、光源部７３とインテグレータ７４との間に設けられ、光源部７３からの光の強度を均一化する他のインテグレータ７９をさらに備えるので、コリメーション半角を小さくすることで悪化する露光面内での照度分布を改善することができる。
　図５（ａ）（ｂ）に示すように、インテグレータ７４，７９は、細分化することによって光の強度を均一化することができる。このため、インテグレータ７４，７９は、照度分布を考慮して、分割数の異なるものを選択することができる。 Further, since it is further provided with another integrator 79 that is provided between the light source unit 73 and the integrator 74 and uniformizes the intensity of light from the light source unit 73, it can be deteriorated by reducing the collimation half angle. The illuminance distribution can be improved.
As shown in FIGS. 5A and 5B, the integrators 74 and 79 can make the light intensity uniform by subdividing. Therefore, the integrators 74 and 79 can select different division numbers in consideration of the illuminance distribution.
　なお、光強度低減部材としては、遮光部材７８の代わりに、複数のレンズセルのいずれかに入射される光を減光する減光フィルタであってもよい。また、遮光部材７８や減光フィルタは、インテグレータ７４の入射面側に設けられているが、インテグレータ７４の出射面側に設けて、パターン露光用の光のコリメーション半角が０．１～２．０°の間で、光強度は入射角０°近傍が最も高くなるように、複数のレンズセルのいずれかから出射される光を遮光又は減光するようにしてもよい。 It should be noted that the light intensity reducing member may be a neutral density filter that attenuates light incident on any of the plurality of lens cells instead of the light shielding member 78. The light blocking member 78 and the neutral density filter are provided on the incident surface side of the integrator 74, but are provided on the output surface side of the integrator 74 so that the collimation half angle of the light for pattern exposure is 0.1 to 2.0. The light emitted from any one of the plurality of lens cells may be blocked or dimmed so that the light intensity is highest in the vicinity of the incident angle of 0 °.
　また、光均一化光学部品としては、他のインテグレータ７９を用いることが、複数の光源部を有する場合にも平行光を得る事ができて好ましいが、他のインテグレータ７９に限らず、ロッド状の内面反射型の光学素子であるロッドインテグレーターやミラーで構成されるカレイドスコープ、拡散板などであってもよい。 Further, as the light homogenizing optical component, it is preferable to use another integrator 79 because it is possible to obtain parallel light even when a plurality of light source units are provided. A kaleidoscope composed of a rod integrator or mirror that is an internal reflection type optical element, a diffusion plate, or the like may also be used.
　さらに、インテグレータ７４や他のインテグレータ７９の位置関係は任意であり、例えば、他のインテグレータ７９がインテグレータ７４の下流側に配置されてもよいし、また、インテグレータ７４と他のインテグレータ７９の少なくとも一方が、露光制御用シャッター７７の上流側に配置されてもよい。 Further, the positional relationship between the integrator 74 and the other integrator 79 is arbitrary. For example, the other integrator 79 may be arranged on the downstream side of the integrator 74, or at least one of the integrator 74 and the other integrator 79 is Further, it may be arranged upstream of the exposure control shutter 77.
　例えば、図６に示すように、本実施形態の変形例に係る近接露光装置としては、遮光部材７８が、インテグレータ７４の出射面側に設けられ、光均一化光学部品を設けない構成であってもよい。 For example, as shown in FIG. 6, the proximity exposure apparatus according to the modification of the present embodiment has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
（第２実施形態）
　次に、本発明の第２実施形態に係る近接露光装置及び近接露光方法について、図７を参照して説明する。なお、本実施形態では、照明光学系７０ａにおいて、コリメーション半角調整機構である光強度低減部材として、複数枚の減光フィルタ７８ａ，７８ｂを用いる点で、第１実施形態の近接露光装置及び近接露光方法と異なる。 (Second Embodiment)
Next, a proximity exposure apparatus and a proximity exposure method according to the second embodiment of the present invention will be described with reference to FIG. In the present embodiment, in the illumination optical system 70a, the proximity exposure apparatus and the proximity exposure according to the first embodiment are used in that a plurality of neutral density filters 78a and 78b are used as the light intensity reducing member that is a collimation half angle adjustment mechanism. Different from the method.
　具体的に、照明光学系７０ａは、光強度低減部材として、第１の減光率を有する移動可能な第１の減光フィルタ７８ａと、第２の減光率を有する移動可能な第２の減光フィルタ７８ｂと、を有する。このため、コリメーション半角内の角度の大きい光に寄与するインテグレータ７４のレンズセルの部分を第１の減光フィルタ７８ａと第２の減光フィルタ７８ｂの少なくとも一方を移動させて減光し、０．１～２．０°の間で、光強度は入射角０°近傍が最も高くなるように可変に設定し、所望の線幅の高解像度なパターンを得る事ができる。 Specifically, the illumination optical system 70a includes a movable first neutral density filter 78a having a first attenuation ratio and a movable second density having a second attenuation ratio as a light intensity reducing member. And a neutral density filter 78b. For this reason, the lens cell portion of the integrator 74 that contributes to light with a large angle within the collimation half angle is dimmed by moving at least one of the first neutral density filter 78a and the second neutral density filter 78b. Between 1 and 2.0 °, the light intensity can be variably set so that the vicinity of the incident angle of 0 ° is the highest, and a high-resolution pattern having a desired line width can be obtained.
　なお、第１の減光フィルタ７８ａの第１の減光率と第２の減光フィルタ７８ｂの第２の減光率が異なる場合には、単独、または共同して減光することで、３つの減光率でレンズセルに入射される光を減光することができる。また、第１の減光フィルタ７８ａの第１の減光率と第２の減光フィルタ７８ｂの第２の減光率の合計が１００％以上である場合、２つの減光フィルタ７８ａ，７８ｂの両方を用いてレンズセルの部分を遮光するようにしてもよい。
　また、光強度低減部材は、それぞれ独立に移動可能な複数の減光フィルタを有する構成であればよく、本実施形態のような２つに限定されるものでなく、３つ以上であってもよい。従って、複数の減光フィルタを、複数種類の減光フィルタで構成し、選択的に使用することで、減光フィルタの種類以上の複数の減光率にて遮光することができる。 When the first attenuation rate of the first neutral density filter 78a and the second attenuation factor of the second neutral density filter 78b are different, the light is attenuated alone or jointly to reduce The light incident on the lens cell can be dimmed with two dimming rates. Further, when the sum of the first attenuation rate of the first attenuation filter 78a and the second attenuation rate of the second attenuation filter 78b is 100% or more, the two attenuation filters 78a and 78b You may make it light-shield the part of a lens cell using both.
Further, the light intensity reducing member only needs to have a plurality of neutral density filters that can move independently of each other, and is not limited to two as in the present embodiment, and may be three or more. Good. Therefore, a plurality of neutral density filters are constituted by a plurality of types of neutral density filters and selectively used, so that light can be shielded with a plurality of neutral density ratios that are equal to or greater than the types of neutral density filters.
　また、図８に示すように、本実施形態の変形例に係る近接露光装置としては、第１及び第２の遮光部材７８ａ，７８ｂが、インテグレータ７４の出射面側に設けられ、光均一化光学部品を設けない構成であってもよい。 Further, as shown in FIG. 8, in the proximity exposure apparatus according to the modification of the present embodiment, first and second light shielding members 78a and 78b are provided on the exit surface side of the integrator 74, and light uniformizing optics. The structure which does not provide components may be sufficient.
（第３実施形態）
　次に、本発明の第３実施形態に係る近接露光装置及び近接露光方法について、図９を参照して説明する。本実施形態の照明光学系７０ｂにおいては、第１及び第２実施形態のような光強度低減部材を設ける代わりに、コリメーション半角調整機構として、光源部７３とインテグレータ７４との間に、インテグレータ７４の入射面に対して鉛直方向に移動可能なレンズ８０を設けている。本実施形態を第１及び第２実施形態と組み合わせて用いる事で、照度低下を抑え目的を達成する事も可能となる。さらに、図９ではレンズ８０を両凸レンズにしているが、凸レンズと凹レンズを組合せる事で、平行光の照射領域を変更する事が可能となる。 (Third embodiment)
Next, a proximity exposure apparatus and a proximity exposure method according to a third embodiment of the present invention will be described with reference to FIG. In the illumination optical system 70b of this embodiment, instead of providing the light intensity reducing member as in the first and second embodiments, as a collimation half-angle adjustment mechanism, the integrator 74 is provided between the light source unit 73 and the integrator 74. A lens 80 that is movable in the vertical direction with respect to the incident surface is provided. By using this embodiment in combination with the first and second embodiments, it is possible to suppress the decrease in illuminance and achieve the object. Furthermore, although the lens 80 is a biconvex lens in FIG. 9, it is possible to change the irradiation region of parallel light by combining the convex lens and the concave lens.
　なお、本実施形態のレンズ８０は、第１実施形態の光強度低減部材、または、第２実施形態の光強度低減部材と組み合わせて適用可能であり、或いは、第１実施形態の光強度低減部材と第２実施形態の光強度低減部材の両方と組み合わせて適用することも可能である。 The lens 80 of the present embodiment can be applied in combination with the light intensity reducing member of the first embodiment or the light intensity reducing member of the second embodiment, or the light intensity reducing member of the first embodiment. It is also possible to apply in combination with both the light intensity reducing member of the second embodiment.
　従って、本実施形態においては、レンズ８０を移動させて、インテグレータ７４への入射光径または入射角を変更して、パターン露光用の光のコリメーション半角の外側の光の強度を弱め、０．１～２．０°の間で、光強度は入射角０°近傍が最も高くなるようにすることで、所望の線幅の高解像度なパターンを得る事ができる。 Therefore, in the present embodiment, the lens 80 is moved to change the incident light diameter or the incident angle to the integrator 74 to weaken the intensity of light outside the collimation half angle of the light for pattern exposure. A high-resolution pattern with a desired line width can be obtained by setting the light intensity to be highest in the vicinity of an incident angle of 0 ° between ˜2.0 °.
　また、図９に示す実施形態では、レンズ８０は、光源部７３と、光均一化光学部品である他のインテグレータ７９との間に配置されているが、図１０に示す本実施形態の変形例に係る近接露光装置のように、光均一化光学部品を設けず、レンズ８０は、光源部７３とインテグレータ７４との間に、配置されてもよい。 In the embodiment shown in FIG. 9, the lens 80 is disposed between the light source unit 73 and another integrator 79 that is a light uniformizing optical component, but a modification of the present embodiment shown in FIG. 10. The lens 80 may be arranged between the light source unit 73 and the integrator 74 without providing the light uniformizing optical component as in the proximity exposure apparatus according to the above.
（第４実施形態）
　次に、本発明の第４実施形態に係る近接露光装置及び近接露光方法について、図１１を参照して説明する。なお、本実施形態の照明光学系７０ｃにおいては、上述した光強度低減部材やレンズを設ける代わりに、コリメーション半角調整機構として、光源部７３をインテグレータ７４の入射面に対して鉛直方向に移動可能に設けている。 (Fourth embodiment)
Next, a proximity exposure apparatus and a proximity exposure method according to the fourth embodiment of the present invention will be described with reference to FIG. In the illumination optical system 70c of the present embodiment, the light source unit 73 can be moved in the vertical direction with respect to the incident surface of the integrator 74 as a collimation half-angle adjustment mechanism instead of providing the above-described light intensity reducing member and lens. Provided.
　従って、本実施形態においては、光源部７３を移動させて、インテグレータ７４への入射光径を変更して、パターン露光用の光のコリメーション半角の外側の光の強度を弱め、０．１～２．０°の間で、光強度は入射角０°近傍が最も高くなるようにすることで、所望の線幅の高解像度なパターンを得る事ができる。 Therefore, in the present embodiment, the light source unit 73 is moved to change the incident light diameter to the integrator 74, thereby reducing the intensity of light outside the collimation half angle of the light for pattern exposure. A high-resolution pattern with a desired line width can be obtained by making the light intensity the highest in the vicinity of an incident angle of 0 ° between 0.0 °.
　なお、図１２に示すように、本実施形態の変形例に係る近接露光装置においても、光均一化光学部品を設けない構成であってもよい。 Note that, as shown in FIG. 12, the proximity exposure apparatus according to the modification of the present embodiment may have a configuration in which the light uniformizing optical component is not provided.
（第５実施形態）
　次に、本発明の第５実施形態に係る近接露光装置及び近接露光方法について、図１３～図１５を参照して説明する。図１３に示すように、本実施形態の照明光学系７０ｄにおいては、第１実施形態の照明光学系７０に、互いに異なる各波長λ［ｎｍ］をそれぞれ透過する複数のバンドパスフィルタ９０ａ，９０ｂを備えたフィルタ切替機構９１をさらに備える。 (Fifth embodiment)
Next, a proximity exposure apparatus and a proximity exposure method according to a fifth embodiment of the present invention will be described with reference to FIGS. As shown in FIG. 13, in the illumination optical system 70d of the present embodiment, the illumination optical system 70 of the first embodiment includes a plurality of bandpass filters 90a and 90b that respectively transmit different wavelengths λ [nm]. The filter switching mechanism 91 provided is further provided.
　また、本実施形態で使用されるマスクＭは、透光性基板からなり、図１４に示すように、ライン状の主開口を有する主パターン部（光透過部）８１と、主パターン部８１の側方に透過性でライン状の補助パターン部（光透過部）８３とを備え、主パターン部８１と補助パターン部８３とが、位相シフト膜８４によって仕切られた位相シフトマスクである。なお、図１４中、補助パターン部８３の外側部分は、光を遮光する遮光膜（クロム膜）８２である。 Further, the mask M used in the present embodiment is made of a translucent substrate, and as shown in FIG. 14, a main pattern portion (light transmission portion) 81 having a line-shaped main opening, and a main pattern portion 81. The phase shift mask includes a side-transparent line-shaped auxiliary pattern portion (light transmission portion) 83, and the main pattern portion 81 and the auxiliary pattern portion 83 are partitioned by a phase shift film 84. In FIG. 14, the outer portion of the auxiliary pattern portion 83 is a light shielding film (chrome film) 82 that shields light.
　補助パターン部８３は、現像処理後によって解像されない開口であり、主パターン部８１の中心Ｏに対して両側側方に対称に配置される。なお、補助パターン部８３は、主パターン部８１の中心Ｏに対して両側側方にそれぞれ複数対称に配置されてもよい。 The auxiliary pattern portion 83 is an opening that is not resolved after the development processing, and is arranged symmetrically on both sides with respect to the center O of the main pattern portion 81. A plurality of auxiliary pattern portions 83 may be arranged symmetrically on both sides with respect to the center O of the main pattern portion 81.
　また、位相シフト膜８４は、通過する光の位相を１８０°ずらすことにより、光の干渉で劣化していた解像度を改善することができる。また、位相シフト膜８４の厚さｄ［ｎｍ］は、基板Ｗに照射される光の波長をλ［ｎｍ］、位相シフト膜８４の屈折率をｎとしたとき、ｄ＝λ／２（ｎ－１）で与えられるようにすることで、１８０°の位相差が与えられる。位相シフト膜８４は、位相シフト量に応じて干渉度合いを変更することも可能である。さらに、位相シフト膜８４での透過量を変えても干渉度合いを変える事が可能である。 Also, the phase shift film 84 can improve the resolution that has deteriorated due to light interference by shifting the phase of the light passing therethrough by 180 °. The thickness d [nm] of the phase shift film 84 is such that d = λ / 2 (n) where λ [nm] is the wavelength of light irradiated to the substrate W and n is the refractive index of the phase shift film 84. The phase difference of 180 ° is given by giving it by -1). The phase shift film 84 can also change the degree of interference according to the phase shift amount. Further, the degree of interference can be changed even if the amount of transmission through the phase shift film 84 is changed.
　主パターン部８１の線幅Ａは、１５μｍ以下であり、基板Ｗの表面に露光転写されるパターンの線幅よりも広く設定されている。また、位相シフト膜８４の幅Ｂは、主パターン部８１の線幅Ａの２／３以下に設定され、補助パターン部８３の線幅Ｃは、位相シフト膜の幅Ｂの２／３以下に設定される。なお、マスクパターンＰの主パターン部８１と補助パターン部８３の各線幅Ａ，Ｃ及び位相シフト膜８４の幅Ｂは、基板Ｗに照射される光の強度を計算によって求め、各マスクパターンによって得られるライン幅方向の強度分布をシミュレーションによって計算し、現像処理後に得られる基板上のパターンの線幅や細線解像に必要なコントラストが得られているかどうかによって決定される。 The line width A of the main pattern portion 81 is 15 μm or less, and is set wider than the line width of the pattern that is exposed and transferred onto the surface of the substrate W. The width B of the phase shift film 84 is set to 2/3 or less of the line width A of the main pattern portion 81, and the line width C of the auxiliary pattern portion 83 is set to 2/3 or less of the width B of the phase shift film. Is set. Note that the line widths A and C of the main pattern portion 81 and the auxiliary pattern portion 83 of the mask pattern P and the width B of the phase shift film 84 are obtained by calculating the intensity of light irradiated to the substrate W and obtained by each mask pattern. The intensity distribution in the line width direction to be obtained is calculated by simulation, and is determined by whether the line width of the pattern on the substrate obtained after the development processing or the contrast necessary for fine line resolution is obtained.
　さらに、位相シフト膜８４を有するマスクＭは、位相シフトによる解像度を向上させるため、膜厚ｄとの関係で、透過させる光の波長λが予め決まっていることから、基板Ｗの感光特性に応じた波長と対応付けられている。また、照明光学系７０ｄでは、切換え可能に配置された複数のバンドパスフィルタ９０ａ，９０ｂのうちから、基板Ｗの感光特性に応じた波長λを透過するバンドパスフィルタ９０ａ，９０ｂを選択する。そして、バンドパスフィルタ９０ａ，９０ｂを透過した波長の光をマスクＭを介して照射し、マスクＭのマスクパターンによって主パターン部８１に対向する基板Ｗの表面にライン状のパターン８５が形成される。 Further, the mask M having the phase shift film 84 has a predetermined wavelength λ of light to be transmitted in relation to the film thickness d in order to improve the resolution due to the phase shift. Are associated with different wavelengths. In the illumination optical system 70d, the band- pass filters 90a and 90b that transmit the wavelength λ according to the photosensitive characteristics of the substrate W are selected from the plurality of band- pass filters 90a and 90b that can be switched. Then, light having a wavelength transmitted through the bandpass filters 90a and 90b is irradiated through the mask M, and a line-shaped pattern 85 is formed on the surface of the substrate W facing the main pattern portion 81 by the mask pattern of the mask M. .
　また、マスクＭは、マスクパターンＰが形成されていないマスクＭの周縁部がチャック部１４に吸着されて保持されるので、マスクＭの自重によって撓みが生じ、マスクＭと基板Ｗとの対向面間のギャップｇは、マスクＭの中心付近で小さく、周縁部で大きくなる傾向があり、マスクＭの各位置でのギャップｇが変化することで得られる強度分布が異なる。 Further, since the peripheral portion of the mask M on which the mask pattern P is not formed is attracted and held by the chuck portion 14, the mask M is bent by its own weight, and the opposing surface of the mask M and the substrate W The gap g between them tends to be small near the center of the mask M, and tends to be large at the periphery, and the intensity distribution obtained by changing the gap g at each position of the mask M is different.
　このため、現像処理後にレジストがパターンを形成するために必要な露光量（エネルギー量）は、ギャップｇが異なる露光領域における各位置で基板上に形成されるパターンの線幅が略一定となるように決定される。従って、エネルギー量は、基板Ｗに塗布されたレジストの感度、及び基板ＷとマスクＭとの対向面間とのギャップｇとを考慮して、基板Ｗ上に形成されるパターンの線幅が所望の幅となるように決定される。 For this reason, the exposure amount (energy amount) necessary for the resist to form a pattern after the development processing is such that the line width of the pattern formed on the substrate at each position in the exposure region where the gap g is different is substantially constant. To be determined. Accordingly, the amount of energy is preferably a line width of a pattern formed on the substrate W in consideration of the sensitivity of the resist applied to the substrate W and the gap g between the opposing surfaces of the substrate W and the mask M. It is determined to be the width of.
　なお、マスクＭのマスクパターンＰは、上述した形状に限定されるものでなく、主パターン部が、位相シフト膜又は遮光膜を介して互いに平行な２本の主開口を備え、補助パターン部が、２本の主開口の外側と内側の少なくとも片側に配置されてもよい。例えば、図１５に示すように、主パターン部８１は、位相シフト膜８４を介して互いに平行な２本の主開口８１ａ，８１ａを備え、補助パターン部８３は、位相シフト膜８４を介して２本の主開口８１ａ，８１ａの外側に配置される。また、補助パターン部８３は、２本の主開口８１ａ，８１ａ間の中心Ｏに対して対称に配置されている。
　また、本実施形態のマスクは、位相シフト膜を有する構成としているが、これに限定されるものではない。例えば、細線解像コントラストが得られるならば、図１６に示すように、マスクパターンＰは、位相シフト膜を用いずに、遮光膜８２によって仕切られた主パターン部８１と補助パターン部８３を有する構成であってもよい。 The mask pattern P of the mask M is not limited to the shape described above, and the main pattern portion includes two main openings parallel to each other via the phase shift film or the light shielding film, and the auxiliary pattern portion is You may arrange | position at least one side of the outer side and inner side of two main openings. For example, as shown in FIG. 15, the main pattern portion 81 includes two main openings 81 a and 81 a that are parallel to each other via the phase shift film 84, and the auxiliary pattern portion 83 is 2 through the phase shift film 84. The main openings 81a and 81a are arranged outside the book. Further, the auxiliary pattern portion 83 is arranged symmetrically with respect to the center O between the two main openings 81a and 81a.
Further, the mask of the present embodiment is configured to have a phase shift film, but is not limited to this. For example, if a fine line resolution contrast is obtained, the mask pattern P has a main pattern portion 81 and an auxiliary pattern portion 83 separated by a light shielding film 82 without using a phase shift film, as shown in FIG. It may be a configuration.
　従って、本実施形態のような、基板Ｗに転写されるパターンの所望の線幅と異なる線幅を有するパターンのマスクを、コリメーション半角調整機構を備えた照明光学系７０ｄと共に使用することでより高解像度のパターンを形成することができる。
　なお、本実施形態のマスクは、第２～第４実施形態のコリメーション半角調整機構にも適用可能である。 Accordingly, the mask of a pattern having a line width different from the desired line width of the pattern transferred to the substrate W as in the present embodiment is used in combination with the illumination optical system 70d provided with the collimation half-angle adjustment mechanism. A resolution pattern can be formed.
Note that the mask of the present embodiment can also be applied to the collimation half-angle adjustment mechanism of the second to fourth embodiments.
　また、図１７に示すように、本実施形態の変形例に係る近接露光装置としては、遮光部材７８が、インテグレータ７４の出射面側に設けられ、光均一化光学部品を設けない構成であってもよい。 Also, as shown in FIG. 17, the proximity exposure apparatus according to the modification of the present embodiment has a configuration in which a light shielding member 78 is provided on the exit surface side of the integrator 74 and no light uniformizing optical component is provided. Also good.
（第６実施形態） (Sixth embodiment)
　図１８に示すように、第６実施形態の照明光学系７０ｅは、発光部としての超高圧水銀ランプ７１ａ，７１ｂと、これらランプ７１ａ，７１ｂから発生された光に指向性をもたせて射出する反射鏡７２ａ，７２ｂと、それぞれを含む第１及び第２の光源部７３ａ，７３ｂと、複数のレンズセルからなるフライアイレンズによって構成され、光源部７３ａ，７３ｂからの光の強度を均一化するインテグレータ７４と、インテグレータ７４の出射面から出射された光路の向きを変える平面鏡７５と、コリメーションミラー７６と、第１及び第２の光源部７３ａ，７３ｂの前方でそれぞれ配置されて、照射された光を通過・遮断するように開閉制御する機械式の第１及び第２の遮光部材（複数の遮光部材）１７７，１７８と、を備える。 As shown in FIG. 18, the illumination optical system 70e according to the sixth embodiment includes ultrahigh pressure mercury lamps 71a and 71b as light emitting units and reflections emitted with directivity to the light generated from these lamps 71a and 71b. An integrator configured by mirrors 72a and 72b, first and second light source units 73a and 73b including the mirrors 72a and 72b, and a fly-eye lens including a plurality of lens cells, and uniformizing the intensity of light from the light source units 73a and 73b 74, a plane mirror 75 that changes the direction of the light path emitted from the exit surface of the integrator 74, a collimation mirror 76, and the first and second light source units 73a and 73b, respectively, are arranged in front of each other, Mechanical first and second light shielding members (a plurality of light shielding members) 177 and 178 that are controlled to open and close so as to pass and block.
　第１の光源部７３ａは、３５０ｎｍ以下、具体的には、ｊ線（３１３ｎｍ）の短波長においてピーク波長を有する光を照射し、第２の光源部７３ｂは、３５０ｎｍ以上、例えば、ｉ線（３６５ｎｍ）の波長においてピーク波長を有する光を照射する。なお、各光源部７３ａ，７３ｂの発光部７１ａ，７１ｂとしては、超高圧水銀ランプに限らず、レーザー光であってもよい。また、第１の光源部７３ａからの光を遮光可能な第１の遮光部材１７７と、第２の光源部７３ｂからの光を遮光可能な第２の遮光部材１７８は、各光源部７３ａ，７３ｂからの光を通過・遮断可能な機械式のものであればよく、各光源部７３ａ，７３ｂの波長の種類、照射時間、照射方向に応じて、開閉角度や、開閉間隔を変えることができる。また、各遮光部材１７７，１７８の機械式に開閉する機構も任意であり、回転式やスライド式であってもよい。 The first light source unit 73a emits light having a peak wavelength at 350 nm or less, specifically, a short wavelength of j-line (313 nm), and the second light source unit 73b is 350 nm or more, for example, i-line ( Irradiating light having a peak wavelength at a wavelength of 365 nm). In addition, as light emission part 71a, 71b of each light source part 73a, 73b, not only an ultrahigh pressure mercury lamp but a laser beam may be sufficient. The first light shielding member 177 capable of shielding light from the first light source unit 73a and the second light shielding member 178 capable of shielding light from the second light source unit 73b include the light source units 73a and 73b. As long as it is a mechanical type that can pass and block light from the light source, the open / close angle and open / close interval can be changed according to the type of wavelength, the irradiation time, and the irradiation direction of the light source units 73a and 73b. Moreover, the mechanism which opens and closes mechanically of each light shielding member 177 and 178 is also arbitrary, and may be a rotary type or a slide type.
　このような露光装置ＰＥにおいて、図１８に示すように、基板ステージ２０上に載置された基板Ｗと、マスク保持枠１２に保持された、マスクパターンを有するマスクＭとが、これらの対向面間を所定のギャップ、例えば１００～１５０μｍ程度に調整して近接対向配置される。そして、まず、第１の遮光部材１７７を閉制御とし、第２の遮光部材１７８を開制御して、第２の光源部７３ｂからの光が、インテグレータ７４に入射され、平面鏡７５およびコリメーションミラー７６で反射されてマスクＭに入射する。また、所定の時間が経過した後、第１の遮光部材１７７も開制御することで、第１の光源部７３ａから短波長の光が、インテグレータ７４に入射され、平面鏡７５およびコリメーションミラー７６で反射されてマスクＭに入射する。そして、マスクＭを透過した第１の光源部７３ａ及び第２の光源部７３ｂの各光は、基板Ｗの表面に塗布されたポジ型レジストを感光させてマスクＭのマスクパターンが基板Ｗに露光転写される。この際、第１の光源部７３ａからの短波長の光によって細線化されたパターンを転写することができると共に、第２の光源部７３ｂからの光によって、基板Ｗとの接触部分のレジストも感光することができる。 In such an exposure apparatus PE, as shown in FIG. 18, the substrate W placed on the substrate stage 20 and the mask M having a mask pattern held on the mask holding frame 12 are opposed to each other. The gaps are adjusted to a predetermined gap, for example, about 100 to 150 μm, and are arranged close to each other. First, the first light shielding member 177 is closed and the second light shielding member 178 is opened, and the light from the second light source unit 73 b is incident on the integrator 74, and the plane mirror 75 and the collimation mirror 76. And is incident on the mask M. In addition, after the predetermined time has elapsed, the first light blocking member 177 is also controlled to be opened, so that light having a short wavelength is incident on the integrator 74 from the first light source unit 73a and reflected by the plane mirror 75 and the collimation mirror 76. Is incident on the mask M. Then, each light of the first light source unit 73a and the second light source unit 73b that has passed through the mask M exposes the positive resist applied on the surface of the substrate W so that the mask pattern of the mask M is exposed to the substrate W. Transcribed. At this time, the thinned pattern can be transferred by the short-wavelength light from the first light source unit 73a, and the resist in the contact portion with the substrate W is also exposed by the light from the second light source unit 73b. can do.
　以上説明したように、本実施形態の近接露光装置及び近接露光方法によれば、照明光学系７０ｅは、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部７３ａと、第１の光源部７３ａと分光特性の異なる光を照射する第２の光源部７３ｂと、第１及び第２の光源部７３ａ，７３ｂからの光を遮光可能な第１及び第２の遮光部材１７７，１７８と、を有する。そして、基板ＷとマスクＭとを所定のギャップに近接させた状態で、第１及び第２の遮光部材１７７，１７８の開タイミングを制御することで第１及び第２の光源部７３ａ，７３ｂからの光を異なるタイミングでマスクＭを介して基板Ｗに照射し、マスクＭのパターンを基板Ｗに転写する。従って、高解像度なパターンを得る事ができるとともに、スループットを向上することができ、さらに、各光源部７３ａ，７３ｂの切り替えを適切なタイミングで行うことができる。 As described above, according to the proximity exposure apparatus and the proximity exposure method of the present embodiment, the illumination optical system 70e includes the first light source unit 73a that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, and the first light source unit 73a. A second light source unit 73b that emits light having spectral characteristics different from those of the first light source unit 73a, and first and second light shielding members 177 that can block light from the first and second light source units 73a and 73b. 178. Then, in a state where the substrate W and the mask M are brought close to a predetermined gap, the opening timings of the first and second light shielding members 177 and 178 are controlled to control the first and second light source units 73a and 73b. Is irradiated onto the substrate W through the mask M at different timings, and the pattern of the mask M is transferred to the substrate W. Therefore, a high-resolution pattern can be obtained, the throughput can be improved, and the light sources 73a and 73b can be switched at an appropriate timing.
　図１９は、本実施形態の変形例に係る照明光学系の模式図である。この照明光学系７０ｆでは、複数の遮光部材が、第１の光源部７３ａからの光を遮光可能な第１の遮光部材１７７と、第１及び第２の光源部７３ａ，７３ｂからの全ての光を遮光可能な第２の遮光部材１７９と、を有する。第２の遮光部材１７９は、図１９のように、インテグレータ７４の入射面側に設けられてもよいし、インテグレータ７４の出射面側に設けられてもよい。このような２つの遮光部材１７７，１７９を有する照明光学系７０ｆの場合にも、上記実施形態の遮光部材１７８と同様に、遮光部材１７９を制御することで同様の効果を奏することができる。
　また、このような第２の遮光部材１７９は、１つの光源部を有する近接露光装置に設けられている既存の遮光部材をそのまま使用することができ、装置コストを低減することができる。 FIG. 19 is a schematic diagram of an illumination optical system according to a modification of the present embodiment. In the illumination optical system 70f, the plurality of light shielding members includes a first light shielding member 177 capable of shielding light from the first light source unit 73a and all light from the first and second light source units 73a and 73b. A second light shielding member 179 capable of shielding the light. As shown in FIG. 19, the second light shielding member 179 may be provided on the incident surface side of the integrator 74, or may be provided on the output surface side of the integrator 74. In the case of the illumination optical system 70f having such two light shielding members 177 and 179, the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 178 of the above embodiment.
In addition, the second light shielding member 179 can use an existing light shielding member provided in the proximity exposure apparatus having one light source unit as it is, and can reduce the apparatus cost.
（第７実施形態）
　次に、本発明の第７実施形態に係る近接露光装置及び近接露光方法について、図２０及び図２１を参照して説明する。なお、本実施形態では、照明光学系７０ｇにおいて、第１及び第２の光源部と複数の遮光部材の構成において、第６実施形態の近接露光装置及び近接露光方法と異なる。 (Seventh embodiment)
Next, a proximity exposure apparatus and a proximity exposure method according to the seventh embodiment of the present invention will be described with reference to FIGS. In the present embodiment, the illumination optical system 70g differs from the proximity exposure apparatus and proximity exposure method of the sixth embodiment in the configuration of the first and second light source units and the plurality of light shielding members.
　図２０及び図２１に示すように、照明光学系７０ｇでは、第１及び第２の光源部７３ｃ，７３ｄは、複数の第１及び第２の光源部７３ｃ，７３ｄをそれぞれ備えており、複数のカセット１８１とフレーム１８２とを用いて、全ての光源部７３ｃ，７３ｄの光がインテグレータ７４の入射面に入射されるように配置されている。例えば、各カセット１８１には、１０個の第１の光源部７３ｄが５個ずつ幅方向に並んで上下に分かれて取り付けられ、１０個の第２の光源部７３ｄが５個ずつ幅方向に並んで中央に二段に亘って取り付けられている。また、フレーム１８２には、上下方向に複数段のカセット１８１が、左右方向に複数列のカセット１８１が取り付けられる。 As shown in FIGS. 20 and 21, in the illumination optical system 70g, the first and second light source units 73c and 73d include a plurality of first and second light source units 73c and 73d, respectively. Using the cassette 181 and the frame 182, the light from all the light source parts 73 c and 73 d is arranged to be incident on the incident surface of the integrator 74. For example, each of the cassettes 181 includes ten first light source parts 73d arranged in the width direction and divided in the vertical direction, and ten second light source parts 73d arranged in the width direction. It is attached to the center in two steps. The frame 182 is provided with a plurality of cassettes 181 in the vertical direction and a plurality of cassettes 181 in the horizontal direction.
　各第１及び第２の光源部７３ｃ，７３ｄも、発光部としての超高圧水銀ランプ７１ｃ，７１ｄと、これらランプ７１ｃ，７１ｄから発生された光に指向性をもたせて射出する反射鏡７２ｃ，７２ｄと、をそれぞれ含み、第１の光源部７３ｃは、３５０ｎｍ以下、具体的には、ｊ線（３１３ｎｍ）の短波長においてピーク波長を有する光を照射し、第２の光源部７３ｄは、３５０ｎｍ以上、例えば、ｉ線（３６５ｎｍ）の波長においてピーク波長を有する光を照射する。即ち、本実施形態の照明光学系７０ｇでは、１０ｋｗ以下の電力で発光するような、第６実施形態のものと比較して小型化された第１及び第２の光源部７３ｃ，７３ｄを複数使用して構成されている。 Each of the first and second light source units 73c and 73d also includes ultrahigh pressure mercury lamps 71c and 71d as light emitting units, and reflecting mirrors 72c and 72d that emit light with directivity emitted from the lamps 71c and 71d. The first light source unit 73c irradiates light having a peak wavelength at 350 nm or less, specifically at a short wavelength of j-line (313 nm), and the second light source unit 73d is 350 nm or more. For example, light having a peak wavelength at the wavelength of i-line (365 nm) is irradiated. That is, the illumination optical system 70g of the present embodiment uses a plurality of first and second light source units 73c and 73d that are reduced in size as compared with those of the sixth embodiment that emit light with power of 10 kw or less. Configured.
　また、カセット１８１には、各光源部７３ｃ，７３ｄの各開口部１８１ａの前面に、複数の遮光部材１８３，１８４が設けられている。即ち、複数の第１の遮光部材１８３が、複数の第１の光源部７３ｃ毎に設けられ、各開口部１８１ａの周囲に設けられた回転軸１８３ａ回りに開閉することで、複数の第１の光源部７３ｃからの光をそれぞれ通過・遮光する。また、複数の第２の遮光部材１８４が、複数の第２の光源部７３ｄ毎に設けられ、各開口部１８１ａの周囲に設けられた回転軸１８４ａ回りに開閉することで、複数の第２の光源部７３ｄからの光をそれぞれ通過・遮光する。なお、第１及び第２の遮光部材１８３，１８４は、本実施形態のようにカセット１８１に取り付けられてもよいし、フレーム１８２に取り付けられてもよい。 Further, the cassette 181 is provided with a plurality of light shielding members 183 and 184 on the front surface of the respective opening portions 181a of the light source portions 73c and 73d. That is, the plurality of first light shielding members 183 are provided for each of the plurality of first light source parts 73c, and are opened and closed around the rotation shafts 183a provided around the respective openings 181a. The light from the light source unit 73c is passed / shielded. In addition, a plurality of second light shielding members 184 are provided for each of the plurality of second light source parts 73d, and are opened and closed around a rotation shaft 184a provided around each opening part 181a. The light from the light source unit 73d is passed / shielded. The first and second light shielding members 183 and 184 may be attached to the cassette 181 as in the present embodiment, or may be attached to the frame 182.
　従って、本実施形態のような照明光学系７０ｈにおいても、複数の第１の遮光部材１８３を閉制御とし、複数の第２の遮光部材１８４を開制御して、複数の第２の光源部７３ｄからの光が、インテグレータ７４に入射され、平面鏡７５およびコリメーションミラー７６で反射されてマスクＭに入射する。また、所定の時間が経過した後、複数の第１の遮光部材１８３も開制御することで、複数の第１の光源部７３ｃから短波長の光が、インテグレータ７４に入射され、平面鏡７５およびコリメーションミラー７６で反射されてマスクＭに入射する。そして、マスクＭを透過した複数の第１の光源部７３ｃ及び複数の第２の光源部７３ｄの各光は、基板Ｗの表面に塗布されたポジ型レジストを感光させてマスクＭのマスクパターンが基板Ｗに露光転写される。従って、本実施形態においても、複数の第１の光源部７３ｃからの短波長の光によって細線化されたパターンを転写することができると共に、複数の第２の光源部７３ｄからの光によって、基板Ｗとの接触部分のレジストも感光することができる。
　また、本実施形態のように、小型の光源部７３ｃ，７３ｄの場合、ランプのガラスの面積が小さくなるため短波長側の光の吸収が小さいので、露光に必要な発光量を確保することができる。 Therefore, also in the illumination optical system 70h as in the present embodiment, the plurality of first light shielding members 183 are closed and the plurality of second light shielding members 184 are opened, so that the plurality of second light source units 73d are controlled. Is incident on the integrator 74, reflected by the plane mirror 75 and the collimation mirror 76, and incident on the mask M. In addition, after the predetermined time has elapsed, the plurality of first light shielding members 183 are also controlled to open, so that light having a short wavelength is incident on the integrator 74 from the plurality of first light source units 73c, and the plane mirror 75 and collimation are performed. The light is reflected by the mirror 76 and enters the mask M. Then, each light of the plurality of first light source units 73c and the plurality of second light source units 73d transmitted through the mask M exposes the positive resist applied on the surface of the substrate W, and the mask pattern of the mask M is formed. It is exposed and transferred to the substrate W. Therefore, also in the present embodiment, the thinned pattern can be transferred by the short wavelength light from the plurality of first light source portions 73c, and the substrate can be transferred by the light from the plurality of second light source portions 73d. The resist in contact with W can also be exposed.
In addition, in the case of the small light source units 73c and 73d as in the present embodiment, since the area of the glass of the lamp is small, the light absorption on the short wavelength side is small, so that it is possible to secure the light emission amount necessary for exposure. it can.
　なお、カセット１８１内で２種類の光源部７３ｃ，７３ｄの配置が予め決まっており、複数の各光源部７３ｃ，７３ｄが隣り合って配置されている場合には、図２２に示す変形例のように、複数の各光源部７３ｃ，７３ｄを纏めて遮光可能な第１及び第２の遮光部材１８３，１８４を構成してもよい。 In the case where the arrangement of the two types of light source units 73c and 73d is determined in advance in the cassette 181, and a plurality of light source units 73c and 73d are arranged adjacent to each other, as in the modification shown in FIG. In addition, the first and second light shielding members 183 and 184 that can collectively shield the light sources 73c and 73d may be configured.
　図２３及び図２４は、本実施形態の変形例に係る照明光学系の模式図である。この照明光学系７０ｈでは、複数の遮光部材１７９，１８３が、複数の第１の光源部７３ｃからの光を遮光可能な複数の第１の遮光部材１８３と、第１及び第２の光源部７３ｃ，７３ｄからの全ての光を遮光可能な第２の遮光部材１７９と、を有する。第２の遮光部材１７９は、図２３のように、インテグレータ７４の入射面側に設けられてもよいし、インテグレータ７４の出射面側に設けられてもよい。このため、カセット１８１には、複数の第１の光源部７３ｃの前面にのみ、複数の第１の遮光部材１８３が取り付けられている。 23 and 24 are schematic views of an illumination optical system according to a modification of the present embodiment. In the illumination optical system 70h, the plurality of light shielding members 179, 183 are capable of shielding light from the plurality of first light source units 73c, and the first and second light source units 73c. , 73d, and a second light shielding member 179 that can shield all light. The second light shielding member 179 may be provided on the incident surface side of the integrator 74 as illustrated in FIG. 23, or may be provided on the emission surface side of the integrator 74. For this reason, a plurality of first light shielding members 183 are attached to the cassette 181 only on the front surface of the plurality of first light source parts 73c.
　このような第１及び第２の遮光部材１８３，１７９を有する照明光学系７０ｈの場合にも、上記実施形態の遮光部材１８４と同様に、遮光部材１７９を制御することで同様の効果を奏することができる。
　また、このような第２の遮光部材１７９は、１種類の光源部を有する近接露光装置に設けられている既存の遮光部材をそのまま使用することができ、装置コストを低減することができる。 In the case of the illumination optical system 70h having the first and second light shielding members 183 and 179, the same effect can be obtained by controlling the light shielding member 179, similarly to the light shielding member 184 of the above embodiment. Can do.
In addition, the second light shielding member 179 can use an existing light shielding member provided in a proximity exposure apparatus having one type of light source unit as it is, and can reduce the apparatus cost.
　なお、第６又は第７実施形態の照明光学系７０ｅ～７０ｈは、第１～第５実施形態のコリメーション半角調整機構を有する照明光学系７０～７０ｄと組み合わせて適用可能である。 The illumination optical systems 70e to 70h of the sixth or seventh embodiment can be applied in combination with the illumination optical systems 70 to 70d having the collimation half angle adjustment mechanism of the first to fifth embodiments.
　尚、本発明は、前述した実施形態に限定されるものではなく、適宜、変形、改良、等が可能である。
　本発明の近接露光装置及び近接露光方法は、ＴＦＴアレイ基板の作成に適用されてもよく、また、カラーフィルタ基板の作成にも適用可能である。
　また、マスクパターンの開口部における光透過率が９０％以下となるように設定してもよい。 In addition, this invention is not limited to embodiment mentioned above, A deformation | transformation, improvement, etc. are possible suitably.
The proximity exposure apparatus and proximity exposure method of the present invention may be applied to the production of a TFT array substrate, and can also be applied to the production of a color filter substrate.
Alternatively, the light transmittance at the opening of the mask pattern may be set to 90% or less.
　また、上記実施形態では、本発明のマスクを近接露光装置に適用した例について説明したが、これに限定されず、近接スキャン露光装置にも同様に適用することができ、同様の効果を奏する。近接スキャン露光装置は、マスクＭに近接して浮上・支持されながら、所定方向に搬送される略矩形状の基板Ｗに対して、マスクパターンを形成した複数のマスクＭを介して露光用の光を照射し、基板Ｗにマスクパターンを露光転写するものであり、基板Ｗが複数のマスクＭに対して相対移動しながら露光転写が行われるスキャン露光方式を採用している。
　さらに、本発明の光源部は、第１及び第２の光源部の２種類の光源部に限らず、第１及び第２の光源部と分光特性が異なる、さらに他の種類の光源部を有する構成であってもよい。 Moreover, although the said embodiment demonstrated the example which applied the mask of this invention to the proximity exposure apparatus, it is not limited to this, It can apply similarly to a proximity scan exposure apparatus, and there exists the same effect. The proximity scanning exposure apparatus exposes light for exposure via a plurality of masks M on which a mask pattern is formed on a substantially rectangular substrate W that is floated and supported in the vicinity of the mask M and is transported in a predetermined direction. , And a mask pattern is exposed and transferred onto the substrate W, and a scanning exposure method is adopted in which exposure transfer is performed while the substrate W is moved relative to the plurality of masks M.
Furthermore, the light source unit of the present invention is not limited to the two types of light source units, the first and second light source units, and has another type of light source unit that has spectral characteristics different from those of the first and second light source units. It may be a configuration.
　本発明を詳細にまた特定の実施態様を参照して説明したが、本発明の精神と範囲を逸脱することなく様々な変更や修正を加えることができることは当業者にとって明らかである。
　本出願は、２０１０年１１月１９日出願の日本特許出願２０１０－２５８９３７、２０１０年１２月１４日出願の日本特許出願２０１０－２７８４１２に基づくものであり、その内容はここに参照として取り込まれる。 Although the present invention has been described in detail and with reference to specific embodiments, it will be apparent to those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application No. 2010-258937 filed on November 19, 2010 and Japanese Patent Application No. 2010-278812 filed on December 14, 2010, the contents of which are incorporated herein by reference.
１２　　マスク保持枠（マスク保持部）
２１　　基板保持部
７０，７０ａ～７０ｈ　　照明光学系
７３　　光源部
７３ａ，７３ｃ　第１の光源部
７３ｂ，７３ｄ　第２の光源部
７４　　インテグレータ（フライアイレンズ）
７８　　遮光部材（光強度低減部材）
７８ａ　第１の減光フィルタ
７８ｂ　第２の減光フィルタ
７９　　他のインテグレータ（フライアイレンズ）
８０　　レンズ
１７７，１８３　第１の遮光部材
１７８，１７９，１８４　第２の遮光部材
ｇ　　　マスクと基板との対向面間のギャップ
Ｍ　　　マスク
ＰＥ　　分割逐次近接露光装置（近接露光装置）
Ｗ　　　ガラス基板（基板） 12 Mask holding frame (mask holding part)
21 Substrate holding part 70, 70a to 70h Illumination optical system 73 Light source part 73a, 73c First light source part 73b, 73d Second light source part 74 Integrator (fly eye lens)
78 Light shielding member (light intensity reducing member)
78a First neutral density filter 78b Second neutral density filter 79 Other integrator (fly eye lens)
80 Lenses 177, 183 First light shielding members 178, 179, 184 Second light shielding member g Gap between facing surfaces of mask and substrate M Mask PE Division sequential proximity exposure apparatus (proximity exposure apparatus)
W Glass substrate (substrate)

Claims (19)

  1. 　基板を保持する基板保持部と、
    　前記基板と対向するように、マスクを保持するマスク保持部と、
    　前記マスクに向けてパターン露光用の光を照射する照明光学系と、
    を有し、前記基板と前記マスクとを所定のギャップに近接させた状態で、前記照明光学系からの光を前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に転写する近接露光装置であって、
    　前記照明光学系は、前記基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構を有することを特徴とする近接露光装置。     A substrate holder for holding the substrate;
    A mask holding unit for holding a mask so as to face the substrate;
    An illumination optical system that emits light for pattern exposure toward the mask;
    In the state where the substrate and the mask are brought close to a predetermined gap, the substrate is irradiated with light from the illumination optical system through the mask, and the pattern of the mask is transferred to the substrate A proximity exposure apparatus,
    The proximity exposure apparatus, wherein the illumination optical system includes a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred onto the substrate.
  2. 　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
    　前記コリメーション半角調整機構は、前記インテグレータの入射面側又は出射面側に設けられ、前記複数のレンズセルのいずれかに入射される光または前記複数のレンズセルのいずれかから出射される光を遮光又は減光する光強度低減部材であることを特徴とする請求項１に記載の近接露光装置。     The illumination optical system further includes a light source unit, and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
    The collimation half-angle adjustment mechanism is provided on an incident surface side or an emission surface side of the integrator, and blocks light incident on one of the plurality of lens cells or light emitted from any of the plurality of lens cells. The proximity exposure apparatus according to claim 1, wherein the proximity exposure apparatus is a light intensity reducing member that reduces light.
  3. 　前記光強度低減部材は、それぞれ独立して移動可能な複数の減光フィルタを有することを特徴とする請求項２に記載の近接露光装置。 3. The proximity exposure apparatus according to claim 2, wherein the light intensity reducing member has a plurality of neutral density filters that can be moved independently of each other.
  4. 　前記複数の減光フィルタは、複数種類の減光フィルタからなり、前記減光フィルタの種類以上の複数の減光率にて遮光可能であることを特徴とする請求項３に記載の近接露光装置。 4. The proximity exposure apparatus according to claim 3, wherein the plurality of neutral density filters include a plurality of types of neutral density filters, and can be shielded with a plurality of neutral density ratios equal to or greater than the type of neutral density filters. .
  5. 　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
    　前記コリメーション半角調整機構は、前記光源部と前記インテグレータとの間に設けられ、前記インテグレータへの入射光径または入射角を変更するレンズであることを特徴とする請求項１に記載の近接露光装置。     The illumination optical system further includes a light source unit, and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
    2. The proximity exposure apparatus according to claim 1, wherein the collimation half-angle adjusting mechanism is a lens that is provided between the light source unit and the integrator and changes an incident light diameter or an incident angle to the integrator. .
  6. 　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
    　前記コリメーション半角調整機構は、前記インテグレータへの入射光径を変更すべく、前記インテグレータの入射面に対して鉛直方向に移動可能な前記光源部であることを特徴とする請求項１に記載の近接露光装置。     The illumination optical system further includes a light source unit, and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
    2. The proximity according to claim 1, wherein the collimation half-angle adjustment mechanism is the light source unit that is movable in a vertical direction with respect to an incident surface of the integrator so as to change an incident light diameter to the integrator. Exposure device.
  7. 　前記照明光学系は、前記光源部と前記インテグレータとの間に設けられ、前記光源部からの光の強度を均一化する光均一化光学部品をさらに備えることを特徴とする請求項２から６のいずれか１項に記載の近接露光装置。 The illumination optical system further includes a light uniformizing optical component that is provided between the light source unit and the integrator and uniformizes the intensity of light from the light source unit. The proximity exposure apparatus according to any one of the above.
  8. 　前記マスクのパターンは、前記基板に転写されるパターンの所望の線幅と異なる線幅を有することを特徴とする請求項１に記載の近接露光装置。 The proximity exposure apparatus according to claim 1, wherein the pattern of the mask has a line width different from a desired line width of the pattern transferred to the substrate.
  9. 　前記照明光学系は、光源部と、複数のレンズセルからなるフライアイレンズによって構成されている、該光源部からの光の強度を均一化するインテグレータと、をさらに備え、
    　前記コリメーション半角調整機構は、前記インテグレータの出射面側に設けられ、前記複数のレンズセルのいずれかから出射される光を遮光する遮光部材であることを特徴とする請求項１に記載の近接露光装置。     The illumination optical system further includes a light source unit, and an integrator configured to equalize the intensity of light from the light source unit, which includes a fly-eye lens including a plurality of lens cells.
    2. The proximity exposure according to claim 1, wherein the collimation half-angle adjustment mechanism is a light-shielding member that is provided on an exit surface side of the integrator and shields light emitted from any of the plurality of lens cells. apparatus.
  10. 　前記光源部からの光は直接、前記インテグレータに入射されることを特徴とする請求項９に記載の近接露光装置。 The proximity exposure apparatus according to claim 9, wherein light from the light source unit is directly incident on the integrator.
  11. 　前記照明光学系は、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部と、該第１の光源部と分光特性の異なる光を照射する第２の光源部と、前記第１及び第２の光源部からの光を遮光可能な複数の遮光部材と、を有し、
    　前記照明光学系は、前記複数の遮光部材の開タイミングを制御することによって前記第１及び第２の光源部の前記光を異なるタイミングで照射可能であることを特徴とする請求項１に記載の近接露光装置。     The illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit, A plurality of light shielding members capable of shielding light from the first and second light source units,
    The said illumination optical system can irradiate the said light of the said 1st and 2nd light source part at a different timing by controlling the opening timing of these light-shielding members. Proximity exposure device.
  12. 　前記複数の遮光部材は、前記第１の光源部からの光を遮光可能な第１の遮光部材と、前記第２の光源部からの光を遮光可能な第２の遮光部材と、を有することを特徴とする請求項１１に記載の近接露光装置。 The plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second light shielding member capable of shielding light from the second light source unit. The proximity exposure apparatus according to claim 11.
  13. 　前記第１及び第２の光源部は、それぞれ複数の第１及び第２の光源部からなり、
    　前記第１の遮光部材は、前記複数の第１の光源部毎に設けられ、前記複数の第１の光源部からの光をそれぞれ遮光可能な複数の第１の遮光部材からなり、
    　前記第２の遮光部材は、前記複数の第２の光源部毎に設けられ、前記複数の第２の光源部からの光をそれぞれ遮光可能な複数の第２の遮光部材からなることを特徴とする請求項１２に記載の近接露光装置。     Each of the first and second light source units includes a plurality of first and second light source units,
    The first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units,
    The second light shielding member is provided for each of the plurality of second light source units, and includes a plurality of second light shielding members capable of shielding light from the plurality of second light source units, respectively. The proximity exposure apparatus according to claim 12.
  14. 　前記複数の第１及び第２の光源部の光がインテグレータレンズの入射面に入射されるように、前記複数の第１及び第２の光源部を支持するカセットをさらに備え、
    　前記複数の第１及び第２の遮光部材は、前記カセットに取り付けられることを特徴とする請求項１３に記載の近接露光装置。     A cassette supporting the plurality of first and second light source units so that the light of the plurality of first and second light source units is incident on an incident surface of the integrator lens;
    The proximity exposure apparatus according to claim 13, wherein the plurality of first and second light shielding members are attached to the cassette.
  15. 　前記複数の遮光部材は、前記第１の光源部からの光を遮光可能な第１の遮光部材と、前記第１及び第２の光源部からの全ての光を遮光可能な第２の遮光部材と、を有することを特徴とする請求項１１に記載の近接露光装置。 The plurality of light shielding members include a first light shielding member capable of shielding light from the first light source unit, and a second light shielding member capable of shielding all light from the first and second light source units. The proximity exposure apparatus according to claim 11, further comprising:
  16. 　前記第１及び第２の光源部は、それぞれ複数の第１及び第２の光源部からなり、
    　前記第１の遮光部材は、前記複数の第１の光源部毎に設けられ、前記複数の第１の光源部からの光をそれぞれ遮光可能な複数の第１の遮光部材からなることを特徴とする請求項１５に記載の近接露光装置。     Each of the first and second light source units includes a plurality of first and second light source units,
    The first light shielding member is provided for each of the plurality of first light source units, and includes a plurality of first light shielding members capable of shielding light from the plurality of first light source units, respectively. The proximity exposure apparatus according to claim 15.
  17. 　前記複数の第１及び第２の光源部の光がインテグレータレンズの入射面に入射されるように、前記複数の第１及び第２の光源部を支持するカセットをさらに備え、
    　前記複数の第１の遮光部材は、前記カセットに取り付けられることを特徴とする請求項１６に記載の近接露光装置。     A cassette supporting the plurality of first and second light source units so that the light of the plurality of first and second light source units is incident on an incident surface of the integrator lens;
    The proximity exposure apparatus according to claim 16, wherein the plurality of first light shielding members are attached to the cassette.
  18. 　基板を保持する基板保持部と、前記基板と対向するように、マスクを保持するマスク保持部と、前記マスクに向けてパターン露光用の光を照射する照明光学系と、を有し、前記照明光学系は、前記基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整するためのコリメーション半角調整機構を有する近接露光装置の近接露光方法であって、
    　前記コリメーション半角調整機構によって基板に転写されるパターンの所望の線幅に対応する所定のコリメーション半角に調整する工程と、
    　前記基板と前記マスクとを所定のギャップに近接させた状態で、前記照明光学系からの光を前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に露光転写する工程と、を備えることを特徴とする近接露光方法。     A substrate holding unit that holds the substrate; a mask holding unit that holds the mask so as to face the substrate; and an illumination optical system that emits light for pattern exposure toward the mask. The optical system is a proximity exposure method of a proximity exposure apparatus having a collimation half angle adjustment mechanism for adjusting to a predetermined collimation half angle corresponding to a desired line width of a pattern transferred to the substrate,
    Adjusting to a predetermined collimation half angle corresponding to a desired line width of the pattern transferred to the substrate by the collimation half angle adjustment mechanism;
    Irradiating the substrate with light from the illumination optical system through the mask in a state where the substrate and the mask are close to a predetermined gap, and exposing and transferring the pattern of the mask to the substrate; A proximity exposure method comprising:
  19. 　前記照明光学系は、３５０ｎｍ以下の短波長においてピーク波長を有する光を照射する第１の光源部と、該第１の光源部と分光特性の異なる光を照射する第２の光源部と、前記第１及び第２の光源部からの光を遮光可能な複数の遮光部材と、を有し、
    　前記露光転写工程では、前記基板と前記マスクとを所定のギャップに近接させた状態で、前記複数の遮光部材の開タイミングを制御することで前記第１及び第２の光源部からの光を異なるタイミングで前記マスクを介して前記基板に照射し、前記マスクのパターンを前記基板に転写することを特徴とする請求項１８に記載の近接露光方法。     The illumination optical system includes a first light source unit that irradiates light having a peak wavelength at a short wavelength of 350 nm or less, a second light source unit that irradiates light having spectral characteristics different from those of the first light source unit, A plurality of light shielding members capable of shielding light from the first and second light source units,
    In the exposure transfer step, the light from the first and second light source units is made different by controlling the opening timing of the plurality of light shielding members in a state where the substrate and the mask are brought close to a predetermined gap. 19. The proximity exposure method according to claim 18, wherein the substrate is irradiated with light through the mask at a timing, and the pattern of the mask is transferred to the substrate.
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